Semiconductor processing apparatus

Abstract

The application discloses a semiconductor process equipment. The disclosed semiconductor process equipment comprises an equipment front end module, a first transfer chamber, a first transfer platform, a second transfer chamber, a second transfer platform and a plurality of process chambers; the equipment front end module, the first transfer chamber, the first transfer platform, the second transfer chamber and the second transfer platform are sequentially arranged and are in openable and closable communication; the plurality of process chambers comprises at least two first process chambers and at least two second process chambers; each first process chamber is arranged on the side wall of the first transfer platform along the circumference of the first transfer platform and is in openable and closable communication with the first transfer platform; each second process chamber is arranged on the side wall of the second transfer platform along the circumference of the second transfer platform and is in openable and closable communication with the second transfer platform; the side wall of at least one of the first transfer platform and the second transfer platform is provided with a groove, and at least part of at least one of the first transfer chamber and the second transfer chamber is located in the groove.

Description

Technical Field

[0001] This application belongs to the field of semiconductor processing technology, specifically relating to a semiconductor process equipment. Background Technology

[0002] Semiconductor process equipment typically includes a front-end module, a transfer chamber, a transfer platform, and a process chamber. The front-end module is used to interface with the wafer cassette. The transfer chamber is used to transfer wafers between the front-end module and the transfer platform or between different transfer platforms. The process chamber is used to process wafers and is located on the side wall of the transfer platform. The transfer platform is used to transfer wafers between the transfer chambers or between different process chambers.

[0003] Taking copper seed layer deposition as an example, this process typically involves six process types. Therefore, completing this process usually requires six process chambers, meaning at least six process chambers need to be suspended on the sidewalls of the transport platform. However, if any process chamber fails, the entire machine must be shut down for repair, which severely impacts wafer processing efficiency. Therefore, related technologies typically configure two process chambers for each process type, meaning at least twelve process chambers need to be suspended on the transport platform, significantly increasing the footprint of the transport platform.

[0004] In summary, the semiconductor process equipment involved in the relevant technologies has the problem of a large footprint. Summary of the Invention

[0005] This application discloses a semiconductor process equipment to solve the problem that the semiconductor process equipment involved in related technologies has a large footprint.

[0006] To solve the above-mentioned technical problems, this application adopts the following technical solution: A semiconductor process apparatus includes an apparatus front-end module, a first transfer chamber, a first transfer platform, a second transfer chamber, a second transfer platform, and multiple process chambers; The equipment front-end module, the first transmission chamber, the first transmission platform, the second transmission chamber, and the second transmission platform are arranged sequentially and are connected in a way that can be switched on and off. The plurality of process chambers include at least two first process chambers and at least two second process chambers. Each first process chamber is arranged along the circumference of the first transmission platform on the side wall of the first transmission platform and is connected in a way that can be switched on and off. Each second process chamber is arranged along the circumference of the second transmission platform on the side wall of the second transmission platform and is connected in a way that can be switched on and off. At least one of the first transmission platform and the second transmission platform has a groove on its side wall, and at least a portion of the first transmission chamber and the second transmission chamber is located within the groove.

[0007] The technical solution adopted in this application can achieve the following beneficial effects: In this application, since at least one of the first and second transmission platforms has a groove on its sidewall, and at least a portion of the first and second transmission chambers is located in the groove, meaning that at least a portion of the first and second transmission chambers occupies the space of the groove, the distance between the first and second transmission chambers and the center of the corresponding first or second transmission platform is smaller. This reduces the additional space occupied by the first and second transmission chambers and also reduces the volume of the first and second transmission platforms, thus reducing the space occupied by them. Therefore, the embodiments of this application can reduce the overall footprint of the semiconductor process equipment. Thus, the semiconductor process equipment disclosed in this application can solve the problem of large footprint in related technologies. Furthermore, by reducing the volume of at least one of the first and second transmission platforms, the vacuum level of the first and second transmission platforms can be better maintained, while increasing the maintenance space of the process chamber located near the groove. Attached Figure Description

[0008] Figure 1 This is a schematic diagram of the structure of the first semiconductor process equipment disclosed in the embodiments of this application; Figure 2 This is a partial structural schematic diagram of the first type of semiconductor process equipment disclosed in the embodiments of this application; Figure 3 This is a partial structural schematic diagram of the second type of semiconductor process equipment disclosed in the embodiments of this application; Figure 4 This is a schematic diagram of the structure of the third semiconductor process equipment disclosed in the embodiments of this application; Figure 5 This is a partial structural schematic diagram of the third semiconductor process equipment disclosed in the embodiments of this application; Figure 6 This is a cross-sectional view of the first transmission chamber disclosed in an embodiment of this application; Figure 7 This is a schematic diagram of the internal structure of the first transmission chamber disclosed in an embodiment of this application; Figure 8 This is a cross-sectional view of the stacked first transmission chambers disclosed in the embodiments of this application; Figure 9 This is a schematic diagram of the internal structure of the multiple stacked first transmission chambers disclosed in an embodiment of this application; Figure 10This is a schematic diagram of the structure of the fourth semiconductor process equipment disclosed in the embodiments of this application; Figure 11 This is a cross-sectional view of the second transmission chamber disclosed in an embodiment of this application; Figure 12 This is a schematic diagram of the internal structure of the second transmission chamber disclosed in an embodiment of this application; Figure 13 This is a cross-sectional view of the multiple stacked second transmission chambers disclosed in the embodiments of this application; Figure 14 This is a schematic diagram of the internal structure of the multiple stacked second transmission chambers disclosed in an embodiment of this application; Figure 15 This is a schematic diagram of the structure of the fifth type of semiconductor process equipment disclosed in the embodiments of this application; Figure 16 This is a schematic diagram of the structure of the sixth type of semiconductor process equipment disclosed in the embodiments of this application; Figure 17 This is a cross-sectional view of the first transmission platform disclosed in an embodiment of this application; Figure 18 This is a cross-sectional view of the second transmission platform disclosed in an embodiment of this application.

[0009] Explanation of reference numerals in the attached figures: 100 - Equipment front-end module; 200 - First transmission chamber, 210 - First housing, 220 - First cooling component, 230 - First drive assembly, 240 - First wafer support frame; 300 - First Transmission Platform; 400 - Second transmission chamber, 410 - Second housing, 420 - Second cooling component, 430 - Second drive assembly, 440 - Second wafer support frame; 500 - Second Transmission Platform; 610 - First process chamber; 620 - Second process chamber; 710 - First robotic arm, 720 - Second robotic arm, 730 - Third robotic arm, 740 - Support platform, 750 - Control module; 800 - Groove, 810 - First Groove, 811 - First Side Wall, 812 - First Bottom Wall, 813 - Second Side Wall, 814 - First Inclined Surface, 815 - Second Inclined Surface, 820 - Second Groove, 821 - First Arc-shaped Wall, 822 - Third Inclined Surface, 823 - Fourth Inclined Surface, 830 - Third Groove, 831 - Second Arc-shaped Wall; 910 - First vacuum pumping device, 911 - First molecular pump, 912 - First dry pump, 920 - Second vacuum pumping device, 921 - Second molecular pump, 922 - Second dry pump, 930 - Third vacuum pumping device, 931 - Third dry pump, 932 - First cold pump, 940 - Fourth vacuum pumping device, 941 - Fourth dry pump, 942 - Second cold pump. Detailed Implementation

[0010] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0011] The semiconductor process equipment disclosed in this application will be described in detail below with reference to the accompanying drawings, through specific embodiments and application scenarios.

[0012] Please refer to Figures 1 to 18 This application discloses a semiconductor process equipment, which includes a front-end module 100, a first transmission chamber 200, a first transmission platform 300, a second transmission chamber 400, a second transmission platform 500, and multiple process chambers.

[0013] The equipment front-end module 100, the first transmission chamber 200, the first transmission platform 300, the second transmission chamber 400, and the second transmission platform 500 are arranged sequentially and can be connected in a way that allows for switching between transmission and disconnection. That is, when wafers need to be transmitted, the equipment front-end module 100, the first transmission chamber 200, the first transmission platform 300, the second transmission chamber 400, and the second transmission platform 500 can be connected; when wafers do not need to be transmitted, the equipment front-end module 100, the first transmission chamber 200, the first transmission platform 300, the second transmission chamber 400, and the second transmission platform 500 can be disconnected. The front-end module 100 is used to dock with the wafer cassette placed on the support platform 740. The wafer cassette is used to hold the wafer. The third robot arm 730 inside the front-end module 100 is used to transfer the wafer into or out of the internal space of the wafer cassette. The support platform 740 and the first transmission chamber 200 can be located on opposite sides of the front-end module 100. The first transmission chamber 200, the first transmission platform 300, the second transmission chamber 400, and the second transmission platform 500 are all used to transfer the wafer.

[0014] The multiple process chambers may include at least two first process chambers 610 and at least two second process chambers 620. Each first process chamber 610 may be disposed on the side wall of the first transfer platform 300 along the circumference of the first transfer platform 300, that is, each first process chamber 610 may be suspended at intervals along the side wall of the first transfer platform 300 along the circumference of the first transfer platform 300. Each first process chamber 610 may be connected to the first transfer platform 300 in a discontinuous manner, that is, when wafers need to be transferred, each first process chamber 610 may be connected to the first transfer platform 300 so that the first robotic arm 710 (described later) within the first transfer platform 300 may transfer wafers into or out of the chamber space of each first process chamber 610; when wafers do not need to be transferred, each first process chamber 610 may be disconnected from the first transfer platform 300.

[0015] Each second process chamber 620 can be disposed on the side wall of the second transfer platform 500 along the circumference of the second transfer platform 500, that is, each second process chamber 620 can be suspended at intervals along the side wall of the second transfer platform 500 along the circumference of the second transfer platform 500. Each second process chamber 620 can be connected to the second transfer platform 500 in a discontinuous manner, that is, when wafers need to be transferred, each second process chamber 620 can be connected to the second transfer platform 500 so that the second robotic arm 720 (described later) inside the second transfer platform 500 can transfer wafers into or out of the chamber space of each second process chamber 620; when wafers do not need to be transferred, each second process chamber 620 can be disconnected from the second transfer platform 500.

[0016] In this embodiment, a groove 800 may be provided on the sidewall of at least one of the first transmission platform 300 and the second transmission platform 500. At least a portion of at least one of the first transmission chamber 200 and the second transmission chamber 400 may be located within the groove 800, meaning that at least a portion of at least one of the first transmission chamber 200 and the second transmission chamber 400 occupies the space where the groove 800 is located. In this case, the distance between at least one of the first transmission chamber 200 and the second transmission chamber 400 and the center of the corresponding first transmission platform 300 or second transmission platform 500 is smaller, thereby reducing the additional space occupied by at least one of the first transmission chamber 200 and the second transmission chamber 400, and also reducing the volume of at least one of the first transmission platform 300 and the second transmission platform 500, i.e., reducing the space occupied by at least one of the first transmission platform 300 and the second transmission platform 500. Therefore, the embodiments of this application can reduce the overall footprint of the semiconductor process equipment. Thus, the semiconductor process equipment disclosed in this application can solve the problem of the large footprint of semiconductor process equipment involved in related technologies.

[0017] Furthermore, by reducing the volume of at least one of the first transfer platform 300 and the second transfer platform 500, the arms of the robotic arms (e.g., the first robotic arm 710 and the second robotic arm 720 described later) used for transferring wafers within at least one of the first transfer platform 300 and the second transfer platform 500 can be shortened, thereby reducing their travel distance and improving wafer transfer efficiency. Moreover, by reducing the volume of at least one of the first transfer platform 300 and the second transfer platform 500, i.e., by making the dimensions of at least one of the first transfer platform 300 and the second transfer platform 500 relatively small, it is easier to maintain the vacuum level of at least one of the first transfer platform 300 and the second transfer platform 500, thereby improving the process reliability of the semiconductor process equipment. Simultaneously, with the recess 800 created, a portion of the space in the recess 800 can be used for maintenance operations by operators, thus increasing the maintenance space for each process chamber located near the recess 800.

[0018] Optionally, at least one of the aforementioned first process chambers 610 can be used as a pre-cleaning chamber; however, this application embodiment does not impose specific limitations on this.

[0019] Optionally, in the equipment front-end module 100, the first transmission chamber 200, the first transmission platform 300, the second transmission chamber 400, and the second transmission platform 500, a first vacuum valve can be provided between adjacent components to facilitate the on / off connection between them. Furthermore, second vacuum valves can also be provided between the first process chamber 610 and the first transmission platform 300, and between the second process chamber 620 and the second transmission platform 500. These corresponding second vacuum valves can facilitate the on / off connection between the first process chamber 610 and the first transmission platform 300, and between the second process chamber 620 and the second transmission platform 500.

[0020] Alternatively, please refer to Figure 1 , Figure 4 , Figure 10 , Figure 15 and Figure 16 The semiconductor process equipment may also include a control module 750, which is located on the front-end module 100 of the equipment. The control module 750 can be used to control the working status of the first robotic arm 710, the second robotic arm 720, the third robotic arm 730, the first vacuum valve, and the second vacuum valve.

[0021] As can be seen from the above, a first robotic arm 710 may be provided inside the first transfer platform 300. The first robotic arm 710 can transfer wafers into or out of the chamber space of each first process chamber 610. Optionally, the bottom of the groove 800 on the first transfer platform 300 may be located outside the minimum rotation range of the first robotic arm 710. That is, the distance between the bottom of the groove 800 on the first transfer platform 300 and the center of the first transfer platform 300 is greater than the minimum rotation radius of the first robotic arm 710. The minimum rotation radius of the first robotic arm 710 is the radius of the circular area formed by the first robotic arm 710 rotating around the center of the first transfer platform 300 when the length of the first robotic arm 710 is shortened to its minimum size.

[0022] Since the bottom of the groove 800 on the first transmission platform 300 is located outside the minimum rotation range of the first robot arm 710, that is, the bottom of the groove 800 on the first transmission platform 300 is relatively far from the center of the first transmission platform 300, this can avoid affecting the movement of the first robot arm 710 within the first transmission platform 300. Of course, in other embodiments, the distance between the bottom of the groove 800 on the first transmission platform 300 and the center of the first transmission platform 300 can be equal to the minimum rotation radius of the first robot arm 710.

[0023] As can be seen from the above, a second robot arm 720 may be provided inside the second transfer platform 500. The second robot arm 720 can transfer wafers into or out of the chamber space of each second process chamber 620. Optionally, the bottom of the groove 800 on the second transfer platform 500 may be located outside the minimum rotation range of the second robot arm 720. That is, the distance between the bottom of the groove 800 on the second transfer platform 500 and the center of the second transfer platform 500 is greater than the minimum rotation radius of the second robot arm 720. The minimum rotation radius of the second robot arm 720 is the radius of the circular area formed by the second robot arm 720 rotating around the center of the second transfer platform 500 when the length of the second robot arm 720 is shortened to its minimum size.

[0024] Since the bottom of the groove 800 on the second transmission platform 500 is located outside the minimum rotation range of the second robot 720, that is, the bottom of the groove 800 on the second transmission platform 500 is relatively far from the center of the second transmission platform 500, this avoids affecting the movement of the second robot 720 within the second transmission platform 500. Of course, in other embodiments, the distance between the bottom of the groove 800 on the second transmission platform 500 and the center of the second transmission platform 500 can be equal to the minimum rotation radius of the second robot 720.

[0025] Optionally, the wafer in the first transfer chamber 200 can be transferred by the first robot arm 710 to the first process chamber 610 so that the first process chamber 610 can perform a first processing process on the wafer. After the wafer is processed in the first process chamber 610, the first robot arm 710 can transfer the wafer to the second transfer chamber 400, and the second robot arm 720 can transfer the wafer in the second transfer chamber 400 to the second process chamber 620 so that the second process chamber 620 can perform a second processing process on the wafer.

[0026] Alternatively, please refer to Figures 1 to 3 , Figure 10 and Figure 16 The groove 800 on the first transmission platform 300 may include a first groove 810. At least a portion of the first transmission chamber 200 may be located within the first groove 810, and the first groove 810 faces the device front-end module 100. The groove wall of the first groove 810 may include a first side wall 811, a first bottom wall 812, and a second side wall 813 connected in sequence. In the direction near the center of the first transmission platform 300, the distance between the first side wall 811 and the second side wall 813 may gradually decrease, making the first groove 810 a flared groove. This results in a relatively large space around the first transmission chamber 200, which facilitates maintenance of the first transmission chamber 200. Of course, in other embodiments, in the direction near the center of the first transmission platform 300, the distance between the first side wall 811 and the second side wall 813 may remain constant or gradually increase.

[0027] Optionally, the number of first transmission chambers 200 can be at least two, and each first transmission chamber 200 can be located between the first transmission platform 300 and the device front-end module 100. In one embodiment, please refer to... Figures 1 to 5 and Figure 15 Each of the first transmission chambers 200 can be arranged side by side along the circumference of the first transmission platform 300, and the first transmission chambers 200 arranged side by side in the circumference can avoid mutual interference.

[0028] In this embodiment, the first bottom wall 812 may include a connected first inclined surface 814 and a second inclined surface 815. The distance between the first inclined surface 814 and the second inclined surface 815 can gradually increase in the direction near the center of the first transmission platform 300, so that the first inclined surface 814 and the second inclined surface 815 are arranged opposite to each other. Each first transmission chamber 200 can be respectively disposed on the first inclined surface 814 and the second inclined surface 815, which makes the distance between the first transmission chambers 200 relatively large, thereby further avoiding interference between the first transmission chambers 200. Of course, in other embodiments, the distance between the first inclined surface 814 and the second inclined surface 815 can gradually decrease in the direction towards the center of the first transmission platform 300.

[0029] In another embodiment, please refer to Figures 8 to 10 and Figure 16 Each of the first transmission chambers 200 can be stacked along the axial direction of the first transmission platform 300, which can be vertical. This vertical stacking reduces the space occupied by each first transmission chamber 200 in the circumferential direction of the first transmission platform 300, thereby reducing the footprint of the semiconductor process equipment. In this embodiment, the arrangement direction of the front-end module 100, the first transmission chambers 200, the first transmission platform 300, the second transmission chambers 400, and the second transmission platform 500 can be a first direction. The first bottom wall 812 can be a plane perpendicular to the first direction, which facilitates the processing of the first bottom wall 812. Each of the first transmission chambers 200 can be disposed on the first bottom wall 812. Of course, in other embodiments, the first bottom wall 812 can be a curved surface.

[0030] Alternatively, please refer to Figure 2 As shown by the dotted line, the first transmission platform 300 is octagonal in shape. To reduce the volume and floor space of the first transmission platform 300, this application provides a first groove 810 on the side wall of the first transmission platform 300. To ensure that the bottom of the groove 800 on the first transmission platform 300 is outside the minimum rotation range of the first robot arm 710, that is, to ensure that the first bottom wall 812 (e.g., the first inclined surface 814 and the second inclined surface 815) of the first groove 810 is outside the minimum rotation range of the first robot arm 710, the distance between the first bottom wall 812 and the center of the first transmission platform 300 can be between 500mm and 900mm. Of course, this application does not impose a specific limitation on this. It should be noted that the distance between the side wall of the first transmission platform 300 without the first groove 810 and the center of the first transmission platform 300 can be between 900mm and 1200mm.

[0031] Alternatively, please refer to Figure 4 , Figure 5 , Figure 15 and Figure 16 The groove 800 on the first transmission platform 300 may include a second groove 820, and at least a portion of the second transmission chamber 400 may be located within the second groove 820. For one embodiment, please refer to [reference needed]. Figure 4 and Figure 5 At least a portion of the groove wall of the second groove 820 can be a first arc-shaped wall 821, and the first arc-shaped wall 821 can be along a direction close to the center of the first transmission platform 300 (see details). Figure 5 (The arc-shaped dashed line in the middle) or the direction away from the center of the first transmission platform 300 (see details) Figure 5The curved solid line in the middle is bent to avoid stress concentration in the second groove 820. Of course, in other embodiments, the groove wall of the second groove 820 may not include the first curved wall 821.

[0032] In another embodiment, please refer to Figure 4 and Figure 5 The arrangement direction of the device front-end module 100, the first transmission chamber 200, the first transmission platform 300, the second transmission chamber 400, and the second transmission platform 500 can be a first direction. At least a portion of the groove wall of the second groove 820 can be a plane perpendicular to the first direction, which facilitates the processing of at least a portion of the groove wall of the second groove 820. Of course, in other embodiments, the groove wall of the second groove 820 can be a curved surface.

[0033] In another embodiment, please refer to Figure 15 and Figure 16 At least a portion of the groove wall of the second groove 820 may include connected third inclined surfaces 822 and fourth inclined surfaces 823. In the direction near the center of the first transmission platform 300, the distance between the third inclined surfaces 822 and fourth inclined surfaces 823 may gradually decrease, making the second groove 820 a flared groove. This results in a relatively large space around the second transmission chamber 400, facilitating maintenance of the second transmission chamber 400. Of course, in other embodiments, in the direction near the center of the first transmission platform 300, the distance between the third inclined surfaces 822 and fourth inclined surfaces 823 may remain constant or gradually increase.

[0034] Optionally, the groove wall of the second groove 820 can be formed by a combination of groove walls of various different shapes. Of course, the groove wall of the second groove 820 can be formed by a groove wall of a single shape. This application embodiment does not impose specific limitations on this.

[0035] Alternatively, please refer to Figure 5 As shown by the dotted line, the first transmission platform 300 is octagonal in shape. To reduce the volume and floor space of the first transmission platform 300, this application can simultaneously provide a first groove 810 and a second groove 820 on the side wall of the first transmission platform 300. To ensure that the bottom of the groove 800 on the first transmission platform 300 is outside the minimum rotation range of the first robot arm 710, as can be seen from the above, the distance between the first bottom wall 812 (e.g., the first inclined surface 814 and the second inclined surface 815) of the first groove 810 and the center of the first transmission platform 300 can be between 500mm and 900mm, and the distance between the first arc-shaped wall 821 of the second groove 820 and the center of the first transmission platform 300 can be between 600mm and 800mm. Of course, this application embodiment does not impose specific limitations on this.

[0036] Alternatively, please refer to Figure 1 , Figure 2 , Figure 10 , Figure 15 and Figure 16 The groove 800 on the second transmission platform 500 may include a third groove 830. At least a portion of the second transmission chamber 400 may be located within the third groove 830. At least a portion of the groove wall of the third groove 830 may be a second arc-shaped wall 831. The second arc-shaped wall 831 may be located either near the center of the second transmission platform 500 or away from the center of the second transmission platform 500 (see details). Figure 1 and Figure 2 The curved solid line in the middle is bent to avoid stress concentration in the third groove 830. Of course, in other embodiments, the groove wall of the third groove 830 may not include the second curved wall 831.

[0037] Alternatively, please refer to Figure 2 As shown by the dotted line, the second transmission platform 500 is octagonal in shape. To reduce the volume and floor space of the second transmission platform 500, this application provides a third groove 830 on the side wall of the second transmission platform 500. To ensure that the bottom of the groove 800 on the second transmission platform 500 is outside the minimum rotation range of the second robot arm 720, that is, to ensure that the second arc-shaped wall 831 of the third groove 830 is outside the minimum rotation range of the second robot arm 720, the distance between the second arc-shaped wall 831 and the center of the second transmission platform 500 can be between 600mm and 800mm. Of course, this application does not impose a specific limitation on this. It should be noted that the distance between the side wall of the second transmission platform 500 without the third groove 830 and the center of the second transmission platform 500 can be between 900mm and 1200mm.

[0038] Optionally, the shape of the first transmission platform 300 and / or the second transmission platform 500 can be a regular polygon, such as a regular hexagon, a regular octagon or a regular decagon. The present application can provide the above-mentioned groove 800 on the regular polygon, for example, a first groove 810 and / or a second groove 820 are provided on the first transmission platform 300, and a third groove 830 is provided on the second transmission platform 500.

[0039] Alternatively, please refer to Figure 5 The first transmission platform 300 is in the shape of a regular polygon, and the outline of the regular polygon of the first transmission platform 300 intersects the outer wall of the second transmission chamber 400 on the side closest to the second transmission chamber 400 (as shown by the dashed line), so that a part of the second transmission chamber 400 overlaps with a part of the area enclosed by the outline of the regular polygon of the first transmission platform 300. This can reduce the space occupied by the second transmission chamber 400 and the first transmission platform 300 as a whole.

[0040] Alternatively, please refer to Figure 1 , Figure 2 , Figure 10 , Figure 15 , Figure 16 The arrangement direction of the front-end module 100, the first transmission chamber 200, the first transmission platform 300, the second transmission chamber 400, and the second transmission platform 500 can be a first direction. The groove 800 on the second transmission platform 500 can include a third groove 830. As described above, at least a portion of the second transmission chamber 400 can be located within the third groove 830, and at least a portion of the groove wall of the third groove 830 can be a plane perpendicular to the first direction. This facilitates the processing of at least a portion of the groove wall of the third groove 830. Furthermore, since the second transmission platform 500 is closer to the edge of the semiconductor process equipment than the first transmission platform 300, having at least a portion of the groove wall of the third groove 830 perpendicular to the first direction allows for a larger third groove 830. This arrangement does not affect the structural strength of the second transmission platform 500 and further reduces the footprint of the semiconductor process equipment. Of course, in other embodiments, the groove wall of the third groove 830 can be a curved surface.

[0041] Since the first transmission chamber 200 can be switched between the device front-end module 100 and the first transmission platform 300, and the internal environment of the device front-end module 100 is typically an atmospheric environment while the internal environment of the first transmission platform 300 is typically a vacuum environment, the internal environment of the first transmission chamber 200 typically switches between atmospheric and vacuum environments to facilitate wafer transfer between the device front-end module 100 and the first transmission platform 300. Optionally, please refer to... Figures 6 to 10 The semiconductor process equipment may also include a first vacuum pumping device 910, which can be connected to the first transmission chamber 200. Specifically, it can be connected to the first transmission chamber 200 in a way that allows it to switch on and off. That is, when it is necessary to perform a vacuum pumping operation on the first transmission chamber 200, the first vacuum pumping device 910 can be connected to the first transmission chamber 200 so that the first vacuum pumping device 910 can smoothly switch the internal environment of the first transmission chamber 200 between an atmospheric environment and a vacuum environment. When it is not necessary to perform a vacuum pumping operation on the first transmission chamber 200, the first vacuum pumping device 910 can be disconnected from the first transmission chamber 200.

[0042] The internal environment of the second transmission chamber 400 is typically a vacuum environment; optionally, please refer to [reference needed]. Figures 11 to 16The semiconductor process equipment may also include a second vacuum pumping device 920, which can be connected to the second transfer chamber 400. Specifically, the connection between the second vacuum pumping device 920 and the second transfer chamber 400 is switchable. That is, when it is necessary to perform a vacuum pumping operation on the second transfer chamber 400, the second vacuum pumping device 920 can be connected to the second transfer chamber 400 so that the second vacuum pumping device 920 can perform a vacuum pumping operation on the second transfer chamber 400. When it is not necessary to perform a vacuum pumping operation on the second transfer chamber 400, the second vacuum pumping device 920 and the second transfer chamber 400 can be disconnected.

[0043] In this embodiment, at least a portion of at least one of the first vacuum pumping device 910 and the second vacuum pumping device 920 may be located within the recess 800. For example, at least a portion of the first vacuum pumping device 910 may be located within the first recess 810, and at least a portion of the second vacuum pumping device 920 may be located within the second recess 820 and / or the third recess 830, so that at least a portion of at least one of the first vacuum pumping device 910 and the second vacuum pumping device 920 can occupy the space where the recess 800 is located, which can further reduce the overall footprint of the semiconductor process equipment. Of course, in other embodiments, neither the first vacuum pumping device 910 nor the second vacuum pumping device 920 may be located within the recess 800.

[0044] As can be seen from the foregoing, the number of first transmission chambers 200 can be at least two. Each first transmission chamber 200 can be located between the first transmission platform 300 and the device front-end module 100, and each first transmission chamber 200 can be stacked along the axial direction of the first transmission platform 300. Optionally, the first vacuum device 910 can include a first molecular pump 911 and a first dry pump 912. Each first transmission chamber 200 is connected to at least one first molecular pump 911 and at least one first dry pump 912. Optionally, the first molecular pump 911 and the first dry pump 912 can be connected to the first transmission chamber 200 in a switchable manner through different third vacuum valves.

[0045] In this embodiment, please refer to Figure 7 and Figure 9 Each first dry pump 912 can be located below each first transmission chamber 200, and each first molecular pump 911 can be located on opposite sides of the first transmission chamber 200 in the circumferential direction of the first transmission platform 300, to avoid interference between the first molecular pumps 911. Of course, in other embodiments, each first molecular pump 911 can be located on the same side of the first transmission chamber 200 in the circumferential direction of the first transmission platform 300.

[0046] In this embodiment, each first dry pump 912 can be located below each first transmission chamber 200, so that in the axial direction of the first transmission platform 300, each first dry pump 912 occupies the space of the lower part of the groove 800. Each first molecular pump 911 can be located on opposite sides of the first transmission chamber 200 in the circumferential direction of the first transmission platform 300, so that in the circumferential direction of the first transmission platform 300, each first dry pump 912 occupies the space of the side area of ​​the groove 800. This makes full use of the internal space of the groove 800 to arrange the first vacuum device 910, thereby further reducing the footprint of the semiconductor process equipment.

[0047] Optionally, both the first molecular pump 911 and the first dry pump 912 reduce the vacuum level of the first transfer chamber 200 by transferring gas outside the pump. The first molecular pump 911 is suitable for use under conditions of higher vacuum and is typically configured to be used after the first dry pump 912 is started. Optionally, the first molecular pump 911 and the first dry pump 912 can be connected to perform vacuum pre-evacuation of the first molecular pump 911 by the first dry pump 912.

[0048] Alternatively, in other embodiments, both the first molecular pump 911 and the first dry pump 912 may be located below the first transmission chamber 200 or on one side of the first transmission chamber 200 in the circumferential direction of the first transmission platform 300.

[0049] Alternatively, in other embodiments, the first vacuum device 910 may only include the first dry pump 912. Of course, the embodiments of this application do not impose specific limitations on this.

[0050] Alternatively, please refer to Figures 13 to 16 The number of second transfer chambers 400 can be at least two. Each second transfer chamber 400 can be located between the first transfer platform 300 and the second transfer platform 500, and each second transfer chamber 400 can be stacked along the axial direction of the first transfer platform 300. As described above, the axial direction of the first transfer platform 300 can be vertical, meaning that each second transfer chamber 400 can be stacked vertically. The space occupied by the axially stacked second transfer chambers 400 is relatively small in the circumferential direction of the first transfer platform 300 or the second transfer platform 500, which can reduce the floor space of the semiconductor process equipment. Optionally, the second vacuum device 920 can include a second molecular pump 921 and a second dry pump 922. Each second transfer chamber 400 is connected to at least one second molecular pump 921 and at least one second dry pump 922. Optionally, the second molecular pump 921 and the second dry pump 922 can be connected to the second transfer chamber 400 in a switchable manner through different fourth vacuum valves.

[0051] In this embodiment, please refer to Figure 12 and Figure 14 Each of the second dry pumps 922 can be located below each of the second transfer chambers 400, and each of the second molecular pumps 921 can be located on opposite sides of the second transfer chambers 400 in the circumferential direction of the first transfer platform 300, to avoid interference between the second molecular pumps 921. Of course, in other embodiments, each of the second molecular pumps 921 can be located on the same side of the second transfer chambers 400 in the circumferential direction of the first transfer platform 300.

[0052] In this embodiment, each of the second dry pumps 922 can be located below each of the second transmission chambers 400, so that each of the second dry pumps 922 occupies the space of the lower part of the groove 800 in the axial direction of the first transmission platform 300. Each of the second molecular pumps 921 can be located on opposite sides of the second transmission chambers 400 in the circumferential direction of the first transmission platform 300, so that each of the second dry pumps 922 occupies the space of the side area of ​​the groove 800 in the circumferential direction of the first transmission platform 300. This makes full use of the internal space of the groove 800 to arrange the second vacuum device 920, thereby further reducing the footprint of the semiconductor process equipment.

[0053] Optionally, both the second molecular pump 921 and the second dry pump 922 reduce the vacuum level of the second transfer chamber 400 by transferring gas outside the pump. The second molecular pump 921 is suitable for use under conditions of higher vacuum and is typically configured to be used after the second dry pump 922 has been started. Optionally, the second molecular pump 921 and the second dry pump 922 can be connected to perform vacuum pre-evacuation of the second molecular pump 921 by the second dry pump 922.

[0054] Optionally, in other embodiments, the second molecular pump 921 and the second dry pump 922 may both be located below the second transmission chamber 400 or on one side of the second transmission chamber 400 in the circumferential direction of the first transmission platform 300.

[0055] Alternatively, in other embodiments, the second vacuum device 920 may only include the second dry pump 922. Of course, the embodiments of this application do not impose specific limitations on this.

[0056] Alternatively, please refer to Figure 17 The semiconductor process equipment may also include a third vacuum pumping device 930, which can be connected to the first transmission platform 300. Specifically, the third vacuum pumping device 930 can be connected to the first transmission platform 300 in a way that allows it to be switched on and off. That is, when it is necessary to perform a vacuum pumping operation on the first transmission platform 300, the third vacuum pumping device 930 can be connected to the first transmission platform 300 so that the third vacuum pumping device 930 can make the internal environment of the first transmission platform 300 a vacuum environment. When it is not necessary to perform a vacuum pumping operation on the first transmission platform 300, the third vacuum pumping device 930 can be disconnected from the first transmission platform 300.

[0057] Optionally, the third vacuum pumping device 930 may include a third dry pump 931 and a first cold pump 932. Both the third dry pump 931 and the first cold pump 932 can be located below the first transfer platform 300, and the third dry pump 931 and the first cold pump 932 can be connected to the first transfer platform 300 in a switchable manner through different fifth vacuum valves. In this embodiment, the third dry pump 931 reduces the vacuum level of the first transfer platform 300 by transferring gas outside the pump, while the first cold pump 932 reduces the vacuum level of the first transfer platform 300 by adsorbing gas at low temperature. The first cold pump 932 is suitable for use in situations with higher vacuum levels and is typically configured to be used after the third dry pump 931 is started.

[0058] Optionally, to increase the vacuum level of the first transmission platform 300, it can be configured with multiple first cold pumps 932, for example, two first cold pumps 932 can be configured. Of course, this application embodiment does not impose specific limitations on this.

[0059] Alternatively, please refer to Figure 18 The semiconductor process equipment may also include a fourth vacuum pumping device 940, which can be connected to the second transmission platform 500. Specifically, the fourth vacuum pumping device 940 can be connected to the second transmission platform 500 in a way that allows it to be switched on and off. That is, when it is necessary to perform a vacuum pumping operation on the second transmission platform 500, the fourth vacuum pumping device 940 can be connected to the second transmission platform 500 so that the fourth vacuum pumping device 940 can make the internal environment of the second transmission platform 500 a vacuum environment. When it is not necessary to perform a vacuum pumping operation on the second transmission platform 500, the fourth vacuum pumping device 940 can be disconnected from the second transmission platform 500.

[0060] Optionally, the fourth vacuum device 940 may include a fourth dry pump 941 and a second cold pump 942. Both the fourth dry pump 941 and the second cold pump 942 can be located below the second transfer platform 500, and the fourth dry pump 941 and the second cold pump 942 can be connected to the second transfer platform 500 in a switchable manner through different sixth vacuum valves. In this embodiment, the fourth dry pump 941 reduces the vacuum level of the second transfer platform 500 by transferring gas outside the pump, while the second cold pump 942 reduces the vacuum level of the second transfer platform 500 by adsorbing gas at low temperature. The second cold pump 942 is suitable for use in situations with higher vacuum levels and is typically configured to be used after the fourth dry pump 941 is started.

[0061] Optionally, to increase the vacuum level of the second transmission platform 500, it can be configured with multiple second cold pumps 942, for example, two second cold pumps 942 can be configured. Of course, this application embodiment does not impose specific limitations on this.

[0062] As can be seen from the foregoing, the number of second transmission chambers 400 can be at least two, and each second transmission chamber 400 can be located between the first transmission platform 300 and the second transmission platform 500. In one embodiment, please refer to... Figures 1 to 5 , Figure 10 Each of the second transmission chambers 400 can be arranged side by side along the circumference of the second transmission platform 500, and the second transmission chambers 400 arranged side by side in the circumference can avoid mutual interference.

[0063] In this embodiment, a groove 800 may be provided on one of the sides of the first transmission platform 300 near the second transmission platform 500 and the side of the second transmission platform 500 near the first transmission platform 300. This reduces the overall footprint of the semiconductor process equipment while ensuring that a sufficient number of process chambers can be suspended on the first and second transmission platforms 300. Alternatively, in other embodiments, grooves 800 may be provided on both the side of the first transmission platform 300 near the second transmission platform 500 and the side of the second transmission platform 500 near the first transmission platform 300. In this case, the size of each process chamber located near the second transmission chamber 400 can be set smaller to ensure that a sufficient number of process chambers can be suspended on the first and second transmission platforms 300 and 500.

[0064] In another embodiment, please refer to Figures 13 to 16 Each of the second transmission chambers 400 can be stacked along the axial direction of the second transmission platform 500, which is parallel to the axial direction of the first transmission platform 300. The axially stacked second transmission chambers 400 can reduce the footprint of the semiconductor process equipment. In this embodiment, the groove 800 on the first transmission platform 300 may include a second groove 820, and the groove 800 on the second transmission platform 500 may include a third groove 830. The first part of each second transmission chamber 400 may be located in the second groove 820, and the second part of each second transmission chamber 400 may be located in the third groove 830, so as to further reduce the overall footprint of the semiconductor process equipment.

[0065] In this embodiment, since each second transmission chamber 400 is stacked along the axial direction of the second transmission platform 500, the space occupied by each second transmission chamber 400 in the circumferential direction of the first transmission platform 300 or the second transmission platform 500 is relatively small. Therefore, even if grooves 800 are provided on both the side of the first transmission platform 300 near the second transmission platform 500 and the side of the second transmission platform 500 near the first transmission platform 300, a sufficient number of process chambers can still be suspended on the sidewalls of the first transmission platform 300 and the second transmission platform 500.

[0066] Alternatively, please refer to Figure 7 and Figure 9 At least one of the first transfer chambers 200 may include a first housing 210, a first cooling element 220, a first driving assembly 230, and a first wafer support 240. The first wafer support 240 is used to support the wafer. The first cooling element 220 may be disposed inside the first housing 210, specifically on the inner bottom wall of the first housing 210. The first driving assembly 230 may be disposed on the outer wall of the first housing 210, and the driving end of the first driving assembly 230 may pass through the first housing 210 and be connected to the first wafer support 240 to drive the first wafer support 240 to move closer to or away from the first cooling element 220 along the axial direction of the first transfer chamber 200, thereby driving the wafer on the first wafer support 240 to move closer to or away from the first cooling element 220 so that the first cooling element 220 can cool the wafer, ensuring the processing effect of the wafer in subsequent process chambers. Of course, in other embodiments, each of the first transfer chambers 200 may not include the first cooling element 220 and the first driving assembly 230.

[0067] Alternatively, please refer to Figure 12 and Figure 14 At least one of the second transfer chambers 400 may include a second housing 410, a second cooling element 420, a second driving assembly 430, and a second wafer support 440. The second wafer support 440 is used to support the wafer. The second cooling element 420 may be disposed inside the second housing 410, specifically on the inner bottom wall of the second housing 410. The second driving assembly 430 may be disposed on the outer wall of the second housing 410, and the driving end of the second driving assembly 430 may pass through the second housing 410 and be connected to the second wafer support 440 to drive the second wafer support 440 to move closer to or away from the second cooling element 420 along the axial direction of the second transfer chamber 400, thereby driving the wafer on the second wafer support 440 to move closer to or away from the second cooling element 420 so that the second cooling element 420 can cool the wafer, ensuring the processing effect of the wafer in subsequent process chambers. Of course, in other embodiments, each of the second transfer chambers 400 may not include the second cooling element 420 and the second driving assembly 430.

[0068] Optionally, during the operation of the first drive assembly 230 and the second drive assembly 430, in order to ensure the vacuum level of the first transmission chamber 200 and the second transmission chamber 400, both the first drive assembly 230 and the second drive assembly 430 can be sealed with bellows to ensure that the first drive assembly 230 and the second drive assembly 430 maintain the vacuum level of the corresponding first transmission chamber 200 and the second transmission chamber 400 when they move.

[0069] Optionally, the aforementioned multiple process chambers can specifically be pretreatment chambers, chemical vapor deposition chambers, atomic layer deposition chambers, physical vapor deposition chambers, plasma-assisted chemical vapor deposition chambers, etc. Taking the copper seed layer deposition process mentioned in the background art as an example, this process requires the use of a variety of different process chambers, including but not limited to: pretreatment chambers, chemical vapor deposition self-assembled layer chambers, atomic layer deposition tantalum nitride chambers, physical vapor deposition tantalum nitride chambers, chemical vapor deposition cobalt chambers, chemical vapor deposition ruthenium chambers, and physical vapor deposition copper chambers, etc.

[0070] The above embodiments of this application focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be described in detail here.

[0071] The above description is merely an embodiment of this application and is not intended to limit the scope of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application.

Claims

1. A semiconductor process apparatus, characterized in that, It includes a front-end module (100), a first transmission chamber (200), a first transmission platform (300), a second transmission chamber (400), a second transmission platform (500), and multiple process chambers; The equipment front-end module (100), the first transmission chamber (200), the first transmission platform (300), the second transmission chamber (400), and the second transmission platform (500) are arranged sequentially and are connected in a way that can be switched on and off. The plurality of process chambers include at least two first process chambers (610) and at least two second process chambers (620). Each first process chamber (610) is disposed on the side wall of the first transmission platform (300) along the circumference of the first transmission platform (300) and is connected in a way that can be switched on and off. Each second process chamber (620) is disposed on the side wall of the second transmission platform (500) along the circumference of the second transmission platform (500) and is connected in a way that can be switched on and off. At least one of the first transmission platform (300) and the second transmission platform (500) has a groove (800) on its side wall, and at least a portion of at least one of the first transmission chamber (200) and the second transmission chamber (400) is located in the groove (800).

2. The semiconductor process equipment according to claim 1, characterized in that, The first transmission platform (300) is equipped with a first robotic arm (710), and the bottom of the groove (800) on the first transmission platform (300) is located outside the minimum rotation range of the first robotic arm (710); and / or, The second transmission platform (500) is equipped with a second robotic arm (720), and the bottom of the groove (800) on the second transmission platform (500) is outside the minimum rotation range of the second robotic arm (720).

3. The semiconductor process equipment according to claim 1, characterized in that, The groove (800) on the first transmission platform (300) includes a first groove (810), at least a portion of the first transmission chamber (200) is located in the first groove (810), and the groove wall of the first groove (810) includes a first side wall (811), a first bottom wall (812) and a second side wall (813) connected in sequence. In the direction near the center of the first transmission platform (300), the distance between the first side wall (811) and the second side wall (813) gradually decreases.

4. The semiconductor process equipment according to claim 3, characterized in that, The number of the first transmission chambers (200) is at least two, and each of the first transmission chambers (200) is located between the first transmission platform (300) and the device front-end module (100), wherein: Each of the first transmission chambers (200) is arranged side by side along the circumference of the first transmission platform (300). The first bottom wall (812) includes a first inclined surface (814) and a second inclined surface (815) connected together. In the direction close to the center of the first transmission platform (300), the distance between the first inclined surface (814) and the second inclined surface (815) gradually increases. Each of the first transmission chambers (200) is respectively disposed on the first inclined surface (814) and the second inclined surface (815); or, Each of the first transmission chambers (200) is stacked along the axial direction of the first transmission platform (300). The arrangement direction of the device front-end module (100), the first transmission chamber (200), the first transmission platform (300), the second transmission chamber (400) and the second transmission platform (500) is the first direction. The first bottom wall (812) is a plane perpendicular to the first direction. Each of the first transmission chambers (200) is disposed on the first bottom wall (812).

5. The semiconductor process equipment according to claim 1, characterized in that, The groove (800) on the first transmission platform (300) includes a second groove (820), and at least a portion of the second transmission chamber (400) is located within the second groove (820), wherein: At least a portion of the groove wall of the second groove (820) is a first arcuate wall (821), which is curved along a direction close to or away from the center of the first transmission platform (300); and / or, The arrangement direction of the device front-end module (100), the first transmission chamber (200), the first transmission platform (300), the second transmission chamber (400), and the second transmission platform (500) is a first direction, and at least a portion of the groove wall of the second groove (820) is a plane perpendicular to the first direction; and / or, At least a portion of the groove wall of the second groove (820) includes a connected third inclined surface (822) and a fourth inclined surface (823), and the distance between the third inclined surface (822) and the fourth inclined surface (823) gradually decreases in the direction close to the center of the first transmission platform (300).

6. The semiconductor process equipment according to claim 1, characterized in that, The groove (800) on the second transmission platform (500) includes a third groove (830), at least a portion of the second transmission chamber (400) is located in the third groove (830), and at least a portion of the groove wall of the third groove (830) is a second arcuate wall (831), which is curved in a direction close to or away from the center of the second transmission platform (500).

7. The semiconductor process equipment according to claim 1, characterized in that, The arrangement direction of the device front-end module (100), the first transmission chamber (200), the first transmission platform (300), the second transmission chamber (400), and the second transmission platform (500) is a first direction. The groove (800) on the second transmission platform (500) includes a third groove (830). At least a portion of the second transmission chamber (400) is located in the third groove (830). At least a portion of the groove wall of the third groove (830) is a plane perpendicular to the first direction.

8. The semiconductor process equipment according to claim 1, characterized in that, The semiconductor process equipment further includes a first vacuum pumping device (910) and a second vacuum pumping device (920), the first vacuum pumping device (910) being connected to the first transfer chamber (200), and the second vacuum pumping device (920) being connected to the second transfer chamber (400), with at least a portion of at least one of the first vacuum pumping device (910) and the second vacuum pumping device (920) located within the groove (800).

9. The semiconductor process equipment according to claim 8, characterized in that, The number of the first transmission chambers (200) is at least two, each of the first transmission chambers (200) is located between the first transmission platform (300) and the device front-end module (100), and each of the first transmission chambers (200) is stacked along the axial direction of the first transmission platform (300). The first vacuum device (910) includes a first molecular pump (911) and a first dry pump (912). Each of the first transmission chambers (200) is connected to at least one first molecular pump (911) and at least one first dry pump (912). Each of the first dry pumps (912) is located below each of the first transmission chambers (200). Each of the first molecular pumps (911) is located on opposite sides of the first transmission chambers (200) in the circumferential direction of the first transmission platform (300); and / or, The number of the second transmission chambers (400) is at least two. Each of the second transmission chambers (400) is located between the first transmission platform (300) and the second transmission platform (500), and each of the second transmission chambers (400) is stacked along the axial direction of the first transmission platform (300). The second vacuum device (920) includes a second molecular pump (921) and a second dry pump (922). Each of the second transmission chambers (400) is connected to at least one second molecular pump (921) and at least one second dry pump (922). Each of the second dry pumps (922) is located below each of the second transmission chambers (400). Each of the second molecular pumps (921) is located on opposite sides of the second transmission chambers (400) in the circumferential direction of the first transmission platform (300).

10. The semiconductor process equipment according to claim 1, characterized in that, The number of the second transmission chambers (400) is at least two, and each of the second transmission chambers (400) is located between the first transmission platform (300) and the second transmission platform (500), wherein: Each of the second transmission chambers (400) is arranged side by side along the circumference of the second transmission platform (500), and the groove (800) is provided on one of the sides of the first transmission platform (300) near the second transmission platform (500) and the side of the second transmission platform (500) near the first transmission platform (300); or, Each of the second transmission chambers (400) is stacked along the axial direction of the second transmission platform (500). The groove (800) on the first transmission platform (300) includes a second groove (820), and the groove (800) on the second transmission platform (500) includes a third groove (830). A first portion of each of the second transmission chambers (400) is located in the second groove (820), and a second portion of each of the second transmission chambers (400) is located in the third groove (830).

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