Semiconductor substrate regeneration apparatus

Abstract

The application provides a semiconductor substrate regeneration device, which comprises an outer frame body, a cleaning machine, a UV exposure machine and a mechanical arm. The outer frame body surrounds to form a process chamber. The cleaning machine, the UV exposure machine and the mechanical arm are arranged in the process chamber. The mechanical arm is arranged between the cleaning machine and the UV exposure machine. The cleaning machine comprises a device body, a substrate support, a cleaning liquid nozzle, an etching liquid nozzle, a developing liquid nozzle and a carbon dioxide water megasonic swing arm. The device body has a containing cavity. The substrate support is arranged in the containing cavity. The cleaning liquid nozzle, the etching liquid nozzle and the developing liquid nozzle are arranged on the inner wall of the containing cavity. The carbon dioxide water megasonic swing arm is connected with the device body. The carbon dioxide water megasonic swing arm is configured to swing above the substrate support. The semiconductor substrate regeneration device has the beneficial effects of high regeneration efficiency, high regeneration product yield, saved regeneration cost and saved installation space.

Description

Technical Field

[0001] This invention relates to the field of integrated circuit technology, and in particular to a semiconductor substrate regeneration device. Background Technology

[0002] During the manufacturing process of semiconductor substrates such as photomasks and photomask substrates, defects are inevitable due to factors such as increased particulate contamination caused by personnel handling or carriers, unstable equipment hardware, or unstable process settings. Directly scrapping defective products would result in waste of raw materials and increased manufacturing costs. Therefore, it is necessary to recycle defective semiconductor substrates such as photomasks and photomask substrates. Semiconductor substrate recycling involves removing the surface films (including photoresist and metal films) and returning them to their original quartz substrate state for reuse.

[0003] Currently, there are three main methods for regenerating semiconductor substrates: wet oxidation or etching with chemicals, dry etching, and mechanical polishing. Wet oxidation or etching uses a tank cleaning machine to remove the adhesive layer by immersion in sulfuric acid, followed by etching to remove the chromium layer. However, the concentration of the cleaning solution in the tank cleaning machine becomes unstable after repeated use, leading to poor cleaning results and incomplete removal of film residues or surface defects. This necessitates repeated rework, affecting regeneration efficiency. Furthermore, this method requires both a tank cleaning machine and an etching machine, resulting in high equipment costs, large equipment size, and significant space requirements. Dry etching involves introducing reactive gases into a vacuum chamber to etch the surface film. While dry etching removes the surface film relatively cleanly, it can cause micro-etching on the quartz substrate, leading to uneven local transmittance and potentially rendering the quartz substrate unusable. Mechanical grinding and polishing removes the film by mechanically grinding away the surface film. This method changes the thickness, roughness, and flatness of the quartz substrate, and may result in defects such as poor roughness or residual polishing fluid. It is also prone to producing large-scale clustering defects on the surface of the quartz substrate, and may even cause the quartz substrate to be scrapped.

[0004] In summary, given the limitations of the three semiconductor substrate regeneration methods mentioned above, there is an urgent need to provide a semiconductor substrate regeneration equipment that offers high regeneration efficiency, high yield of regenerated products, cost savings, and space-saving installation. Summary of the Invention

[0005] The purpose of this invention is to provide a semiconductor substrate regeneration device with high regeneration efficiency, high yield of regenerated products, low regeneration cost, and low installation space.

[0006] To achieve the above objectives, the present invention provides a semiconductor substrate regeneration device, comprising: an outer frame body, a cleaning machine, a UV exposure machine, and a robot arm. The outer frame body encloses a process chamber, and the cleaning machine, UV exposure machine, and robot arm are all disposed within the process chamber, with the robot arm positioned between the cleaning machine and the UV exposure machine. The cleaning machine comprises: a device body, a substrate stage, cleaning fluid nozzles, etching fluid nozzles, developing fluid nozzles, and a carbon dioxide-water megasonic swing arm. The device body has a receiving cavity, and the substrate stage is disposed within the receiving cavity. The cleaning fluid nozzles, etching fluid nozzles, and developing fluid nozzles are respectively disposed on the inner wall of the receiving cavity. The carbon dioxide-water megasonic swing arm is connected to the device body and is configured to swing above the substrate stage.

[0007] In one embodiment, the cleaning machine further includes a splash guard connected to the main body of the device at the opening of the receiving cavity.

[0008] In one embodiment, the cleaning fluid nozzle, etching fluid nozzle, and developer nozzle are all fan-shaped nozzles with a spray angle of 30° to 60°.

[0009] In one embodiment, the cleaning machine further includes: Rotary driver, the rotary driver is connected to the substrate stage; And / or, The lifting driver is connected to the substrate stage.

[0010] In one embodiment, the UV exposure machine includes a housing and UV lamps. The housing has a window door, and the UV lamps are disposed inside the housing, with the UV lamps respectively disposed on the top plate and the bottom plate of the housing.

[0011] In one embodiment, the wavelength range of the UV lamp is 185nm to 254nm.

[0012] In one embodiment, the cleaning machine further includes a drain connector, which includes a connecting pipe section, an etching solution pipe section, a developing solution pipe section, and a pneumatic valve. One end of the connecting pipe section is connected to a drain port on the main body of the device, and the other end is connected to the etching solution pipe section and the developing solution pipe section respectively. The connecting pipe section, the etching solution pipe section, and the developing solution pipe section are arranged in an inverted T-shape. The pneumatic valve is located at the connection between the connecting pipe section and the etching solution pipe section and the developing solution pipe section.

[0013] In one embodiment, the etching fluid pipe section is inclined downward at 5° from the connection point between the etching fluid pipe section and the connecting pipe section to the end of the etching fluid pipe section.

[0014] In one embodiment, the semiconductor substrate regeneration device described above further includes an FFU, which is disposed on top of the outer frame body.

[0015] In one embodiment, the semiconductor substrate includes a mask template and a mask base.

[0016] The aforementioned semiconductor substrate regeneration equipment features a single-chamber regeneration cleaning unit. The main body of the unit integrates cleaning fluid nozzles, etching fluid nozzles, developing fluid nozzles, and a carbon dioxide-water megasonic swing arm. When regenerating a semiconductor substrate using this equipment, the substrate is first placed in a UV exposure machine for exposure. After exposure, the substrate is placed on the substrate stage of the cleaning machine. Then, cleaning fluid is sprayed through the cleaning fluid nozzles to pre-clean the surface of the substrate. After pre-cleaning, developing fluid is sprayed through the developing fluid nozzles to remove the photoresist layer. After removing the photoresist layer, cleaning fluid is sprayed again through the cleaning fluid nozzles to clean the semiconductor substrate and the chamber. Next, etching fluid is sprayed through the etching fluid nozzles to remove the metal film layer. After removing the metal film layer, cleaning fluid is sprayed through the cleaning fluid nozzles to clean the chamber and the regenerated quartz substrate. Finally, carbon dioxide-water is sprayed through the carbon dioxide-water megasonic swing arm to clean the quartz substrate, and then cleaning fluid is sprayed through the cleaning fluid nozzles for final washing, completing the regeneration process.

[0017] The aforementioned semiconductor substrate regeneration equipment removes both photoresist and metal film layers in a single machine. The regeneration process uses fresh chemicals for single-wafer processing, ensuring consistency across each substrate and effectively solving the problems of unstable chemical concentration and poor cleaning effect in traditional tank cleaning machines. A single process ensures thorough removal of surface films and defects, significantly improving regeneration efficiency. Simultaneously, the device employs a wet exposure and development method to remove the photoresist layer and a wet etching method to remove the metal film layer, preventing damage to the quartz substrate and ensuring a high yield of regenerated quartz substrates. Furthermore, the device cleans the semiconductor substrate or the regenerated quartz substrate and chamber after each regeneration step, preventing cross-contamination of residual adhesive and metal, effectively guaranteeing the cleanliness of the regenerated quartz substrate and further improving regeneration efficiency and yield. Moreover, this device can perform the semiconductor substrate regeneration process with a single machine, resulting in low equipment cost and small size, effectively saving equipment costs and installation space.

[0018] In summary, the aforementioned semiconductor substrate regeneration equipment can meet the process requirements of removing both photoresist and metal film layers in semiconductor substrate regeneration. It has the advantages of high regeneration efficiency, high yield of regenerated products, cost savings, and space-saving installation. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the application structure of a semiconductor substrate regeneration device according to one embodiment; Figure 2 This is a partial top view of a semiconductor substrate regeneration apparatus according to an embodiment.

[0020] Explanation of reference numerals in the attached figures: 10-Outer frame main body, 11-Pass-through window, 12-FFU, 20-Washing machine, 21-Main body of device, 22-Substrate stage, 23-Washing fluid nozzle, 24-Etching fluid nozzle, 25-Developing fluid nozzle, 26-Carbon dioxide water megasonic swing arm, 27-Splash shield, 30-UV exposure machine, 31-Cover, 32-UV lamp, 33-Window door, 40-Robot arm, 50-Semiconductor substrate. Detailed Implementation

[0021] The present invention will be described more clearly and completely by way of embodiments and in conjunction with the accompanying drawings, but the present invention is not limited to the scope of the following embodiments.

[0022] Please see Figure 1 One embodiment of a semiconductor substrate regeneration apparatus includes an outer frame body 10, a cleaning machine 20, a UV exposure machine 30, and a robot arm 40. The outer frame body 10 encloses a process chamber. The cleaning machine 20, the UV exposure machine 30, and the robot arm 40 are all disposed within the process chamber, with the robot arm 40 positioned between the cleaning machine 20 and the UV exposure machine 30. The cleaning machine 20 includes a device body 21, a substrate stage 22, cleaning fluid nozzles 23, etching fluid nozzles 24, developing fluid nozzles 25, and a carbon dioxide-water megasonic swing arm 26. The device body 21 has a receiving cavity, and the substrate stage 22 is disposed within the receiving cavity. The cleaning fluid nozzles 23, etching fluid nozzles 24, and developing fluid nozzles 25 are respectively disposed on the inner wall of the receiving cavity. The carbon dioxide-water megasonic swing arm 26 is connected to the device body 21 and is configured to swing above the substrate stage 22.

[0023] Specifically, the developer is a 2.38% tetramethylammonium aqueous solution, the etching solution is preferably a cerium ammonium nitrate solution, and the cleaning solution sprayed by the cleaning nozzle 23 is preferably carbon dioxide water. Furthermore, the megasonite frequency of the carbon dioxide water megasonite swing arm 26 is preferably 1MHz~5MHz. The carbon dioxide water megasonite swing arm 26 creates a cavitation effect in the liquid through high-frequency acoustic vibration. The CO2 in the carbon dioxide water dissolves in molecular form to form tiny bubbles that collapse violently. This generates high temperature, high pressure, and strong impact force at the contact surface to remove micro- and nano-sized contaminants or particles, effectively improving the cleaning effect.

[0024] Furthermore, the cleaning machine 20 also includes a liquid supply pipeline and a liquid discharge pipeline. The liquid supply pipeline is connected to the cleaning liquid nozzle 23, the etching liquid nozzle 24, the developer liquid nozzle 25, and the carbon dioxide water megasonic spray swing arm 26 and their corresponding liquid supply sources to provide process chemicals and cleaning liquid. The liquid discharge pipeline is used to discharge process waste liquid. In one embodiment, the cleaning machine 20 also includes a liquid discharge connector, which includes a connecting pipe section, an etching liquid pipe section, a developer liquid pipe section, and a pneumatic valve. One end of the connecting pipe section is connected to the drain port on the main body of the device, and the other end is connected to the etching liquid pipe section and the developer liquid pipe section, respectively. The connecting pipe section and the etching liquid pipe section and the developer liquid pipe section are distributed in an inverted T-shape. The pneumatic valve is located at the connection between the connecting pipe section and the etching liquid pipe section and the developer liquid pipe section. Further, in this embodiment, the liquid discharge pipeline includes an etching liquid discharge pipe and a developer liquid discharge pipe. The etching liquid pipe section is connected to the etching liquid discharge pipe, and the developer liquid pipe section is connected to the developer liquid discharge pipe. This embodiment employs a T-shaped drainage connector to separate the etching solution and developer solution for discharge. A pneumatic valve selects the appropriate drainage pipe based on the formula's drainage type, ensuring separate discharge of acidic etching solution and alkaline developer solution. This effectively prevents the etching solution and developer solution from converging in the same drainage pipe, which could lead to an acid-base cleaning reaction and blockage, thus ensuring efficient drainage. Furthermore, in one embodiment, the etching solution pipe section is angled downwards at 5° from the connection point with the connecting pipe section to its end. This downward angle ensures timely and rapid discharge of acidic etching solution, further preventing crystallization reactions.

[0025] like Figure 1 , Figure 2 As shown, in this embodiment, there are two cleaning fluid nozzles 23, which are arranged opposite to each other. There is one etching fluid nozzle 24 and one developer nozzle 25. It should be noted that this embodiment does not limit the specific number of cleaning fluid nozzles 23, etching fluid nozzles 24, and developer nozzles 25. The number of cleaning fluid nozzles 23, etching fluid nozzles 24, and developer nozzles 25 can be one or more. To save equipment costs, only one cleaning fluid nozzle 23, one etching fluid nozzle 24, and one developer nozzle 25 can be provided. To improve process efficiency, more cleaning fluid nozzles 23, multiple etching fluid nozzles 24, and multiple developer nozzles 25 can be provided. In practical applications, the appropriate number of cleaning fluid nozzles 23, etching fluid nozzles 24, and developer nozzles 25 can be set according to specific needs. This embodiment does not impose a specific limitation. Preferably, when multiple cleaning fluid nozzles 23, multiple etching fluid nozzles 24 and multiple developer nozzles 25 are provided, in order to ensure process uniformity, the multiple cleaning fluid nozzles 23 are preferably arranged at equal intervals along the circumference, the multiple etching fluid nozzles 24 are arranged at equal intervals along the circumference, and the multiple developer nozzles 25 are also arranged at equal intervals along the circumference.

[0026] In one embodiment, the semiconductor substrate 50 includes a mask template and a mask base plate. The semiconductor substrate regeneration equipment in this embodiment can be used for a mask base plate regeneration process or a mask template regeneration process. For ease of explanation, the following embodiment uses the semiconductor substrate 50 as a mask base plate as an example for illustration.

[0027] The cleaning machine 20 of the semiconductor substrate regeneration equipment in this embodiment is designed as a single-chamber regeneration cleaning device. The main body 21 of the device integrates a cleaning liquid nozzle 23, an etching liquid nozzle 24, a developer nozzle 25, and a carbon dioxide water megasonic swing arm 26. When regenerating a semiconductor substrate 50 using this semiconductor substrate regeneration equipment, the mask substrate to be processed is first placed in a UV exposure machine for exposure. After exposure, the semiconductor substrate is placed on the substrate stage 22 of a cleaning machine. Then, cleaning solution is sprayed through cleaning solution nozzle 23 to perform surface pre-cleaning treatment on the mask substrate. After surface pre-cleaning treatment, developing solution is sprayed through developing solution nozzle 25 to remove the photoresist layer. After removing the photoresist layer, cleaning solution is sprayed through cleaning solution nozzle 23 again to clean the mask substrate and the chamber. Then, etching solution is sprayed through etching solution nozzle 24 to remove the metal film layer. After removing the metal film layer, cleaning solution is sprayed through cleaning solution nozzle 23 to clean the chamber and the regenerated quartz substrate. Finally, carbon dioxide water is sprayed through carbon dioxide water mega-sound swing arm 26 to clean the quartz substrate, and then cleaning solution is sprayed through cleaning solution nozzle 23 to perform final washing of the quartz substrate, completing the regeneration process.

[0028] The semiconductor substrate regeneration equipment in this embodiment removes both the photoresist layer and the metal film layer in a single machine. The regeneration process uses fresh chemicals for single-wafer processing, ensuring process consistency for each substrate and effectively solving the problems of unstable chemical concentration and poor cleaning effect in traditional tank cleaning machines. A single process ensures thorough removal of surface films and defects, significantly improving regeneration efficiency. Simultaneously, the device uses a wet exposure and development method to remove the photoresist layer and a wet etching method to remove the metal film layer, without damaging the quartz substrate. This effectively ensures a high yield of the regenerated quartz substrate. Furthermore, the device can clean the semiconductor substrate 50 or the regenerated quartz substrate and chamber after each regeneration step, ensuring that removed residual adhesive and metal do not cross-contaminate, effectively guaranteeing the cleanliness of the regenerated quartz substrate and further improving regeneration efficiency and yield. Moreover, this device can perform the semiconductor substrate 50 regeneration process with only one machine, resulting in low equipment cost and small size, effectively saving equipment costs and installation space.

[0029] In summary, the aforementioned semiconductor substrate regeneration equipment can meet the process requirements of removing both photoresist and metal film layers in the semiconductor substrate 50 regeneration process. It has the advantages of high regeneration efficiency, high yield of regenerated products, cost savings, and space-saving installation.

[0030] In one embodiment, the cleaning machine 20 further includes a splash guard 27, which is connected to the main body 21 at the opening of the receiving cavity. In this embodiment, the splash guard 27 at the opening of the receiving cavity effectively blocks process splashes, preventing environmental pollution or personnel injury caused by chemical splashing, thus being environmentally friendly and improving process safety. Specifically, the splash guard 27 has through holes to facilitate the loading of the semiconductor substrate 50. Preferably, the size of the through holes is larger than the size of the substrate stage 22 to prevent the semiconductor substrate 50 from colliding with the splash guard 27 during loading.

[0031] In one embodiment, to ensure process uniformity, both the etching solution nozzle 24 and the developer nozzle 25 are fan-shaped nozzles. Similarly, to ensure that the cleaning solution is sprayed evenly on the substrate surface, the cleaning solution nozzle 23 is also a fan-shaped nozzle. Furthermore, to ensure both spray uniformity and the impact force of the etching solution or cleaning solution, the spray angle of the fan-shaped nozzle is preferably 30°~60°.

[0032] In one embodiment, the cleaning machine 20 further includes a rotary driver connected to the substrate stage 22. Specifically, the rotary driver is located within the accommodating cavity. The rotary driver can be, but is not limited to, a rotary motor. The rotary driver is used to drive the substrate stage 22 to rotate, thereby rotating the semiconductor substrate 50. This helps to further improve process uniformity and cleaning efficiency. Furthermore, at the end of the process, the quartz substrate can be quickly dried by high-speed rotation, achieving rapid drying without traces or water stains.

[0033] In one embodiment, the semiconductor substrate regeneration equipment further includes a lifting driver connected to the substrate stage 22. Specifically, the lifting driver is located within the accommodating cavity and can be any one of a linear motor, pneumatic rod, or hydraulic cylinder. The lifting driver drives the substrate stage 22 to move vertically, allowing it to pass through the through-hole of the splash shield 27 and move to the outside of the accommodating cavity, thereby facilitating substrate loading and gripping operations. When it is necessary to load the semiconductor substrate 50, the lifting driver drives the substrate stage 22 to move upward, allowing it to pass through the through-hole and move above the splash shield 27. After moving into position, the semiconductor substrate 50 is loaded onto the substrate stage 22. After loading is completed, the lifting driver drives the substrate stage 22 to move back to its original position. Furthermore, after the regeneration process is completed, the lifting driver drives the substrate stage 22 to move upward so that the substrate stage 22 moves through the through hole to above the splash shield 27. After moving into position, it grabs the quartz substrate on the substrate stage 22. After removing the quartz substrate, the next semiconductor substrate 50 that needs to be processed can be directly loaded. After loading is completed, the substrate stage 22 is driven to move and reset.

[0034] In the above embodiments, the semiconductor substrate regeneration equipment includes an outer frame body 10, and a cleaning machine 20 and a UV exposure machine 30 are all disposed within the process chamber enclosed by the outer frame body 10. This embodiment isolates the cleaning machine 20 and the UV exposure machine 30 from the cleanroom environment by setting the outer frame body 10, preventing internal chemical leaks from evaporating into the cleanroom environment and protecting the cleaning machine 20 and UV exposure machine 30 from external environmental contamination, thus ensuring process cleanliness. Further, in one embodiment, the semiconductor substrate regeneration equipment also includes an FFU 12, which is disposed on the top of the outer frame body 10. Specifically, the FFU 12 is installed on the outer side of the top of the outer frame body 10. The FFU 12 provides clean air, preventing the entry of harmful substances and particles, while downward airflow facilitates air circulation and filtration within the chamber, ensuring the cleanliness of the process chamber. Even further, in one embodiment, a transfer window 11 is provided on the side wall of the outer frame body 10 to facilitate substrate transfer.

[0035] In one embodiment, the UV exposure machine 30 includes a housing 31 and UV lamps 32. A window door 33 is provided on the housing 31, and the UV lamps 32 are disposed inside the housing 31, with the UV lamps 32 respectively mounted on the top and bottom plates of the housing 31. This embodiment, by mounting UV lamps 32 on both the top and bottom plates of the housing 31, allows for simultaneous UV irradiation of both surfaces of the semiconductor substrate. For the surface of the semiconductor substrate with photoresist, the photoresist can be exposed, and UV cleaning can be performed on this surface to remove organic contaminants. Simultaneously, UV cleaning can also be performed on the other surface to remove organic contaminants, thus improving cleaning efficiency. Furthermore, this embodiment designs a sealed UV cavity by providing the window door 33. The window door 33 is only opened when the semiconductor substrate is transported and removed; at other times, the window door 33 remains closed, effectively improving process safety. Furthermore, in one embodiment, the wavelength range of the UV lamp 32 is 185nm~254nm. The UV lamp 32 is preferably a nano-composite mercury lamp with a wavelength range of 185nm~254nm. The UV exposure machine 30 of this embodiment is equipped with multi-segment linewidth exposure function, which can expose photoresists in the I-line and KrF wavelength ranges, and has a wide range of applications.

[0036] The above embodiments have provided a detailed description of the structural composition of the semiconductor substrate regeneration equipment of the present invention. The following, in conjunction with the above embodiments, takes the mask substrate regeneration process using the above semiconductor substrate regeneration equipment as an example to specifically describe the detailed working process of the above semiconductor substrate regeneration equipment: First, the robotic arm 40 picks up the photomask substrate stored on the loading platform and places it into the UV exposure machine 30 for exposure. After exposure, the substrate stage 22 rises above the splash guard 27, and the robotic arm 40 removes the photomask substrate from the UV exposure machine and places it on the substrate stage 22. After loading, the substrate stage 22 descends and resets. Once reset, the substrate stage 22 rotates clockwise at the set speed. Simultaneously, the cleaning fluid nozzles 23 on the inner wall of the accommodating cavity spray carbon dioxide water to pre-clean the surface of the photomask substrate. After pre-cleaning, developing solution is sprayed through the developing fluid nozzles to remove the photoresist layer. After removing the photoresist layer, the cleaning fluid nozzles 23 on the inner wall of the accommodating cavity spray carbon dioxide water for washing; then, the etching fluid nozzles 24 spray etching fluid to remove the surface metal film layer; after removing the metal film layer, the accommodating cavity and the regenerated quartz substrate are cleaned by spraying carbon dioxide water through the cleaning fluid nozzles 23; then, the carbon dioxide water megasonic swing arm 26 is moved into the accommodating cavity, and after moving to above the center position of the mask substrate, carbon dioxide water is sprayed to clean the quartz substrate, removing micro-nano-scale contaminants or particles on the surface. After the megasonic carbon dioxide water spray cleaning is completed, the cleaning fluid is sprayed through the cleaning fluid nozzles 23 to perform the final washing of the quartz substrate; after the final washing is completed, the substrate stage 22 is driven to rotate at high speed to spin dry the quartz substrate at high speed; finally, after the drying process is completed, the substrate stage 22 is driven to rise above the splash guard 27, and the robot arm 40 picks up the quartz substrate from the substrate stage 22 and puts the quartz substrate back into the storage box on the loading platform, completing the mask substrate regeneration process.

[0037] Furthermore, the aforementioned semiconductor substrate regeneration equipment can also be used for mask regeneration processes. The mask surface only has a metal film layer and no photoresist layer. Therefore, when using the aforementioned semiconductor substrate regeneration equipment for mask regeneration processes, there is no need to perform a photoresist layer removal step. After completing the surface pre-cleaning treatment, the step of spraying etching solution to remove the metal film layer can be directly performed. When using the aforementioned semiconductor substrate regeneration equipment for mask regeneration processes, only the aforementioned exposure and spraying developer solution to remove the photoresist layer and the cleaning step after photoresist removal need to be omitted. All other steps are the same, and the specific execution steps of each step are the same as those in the above embodiments, and will not be repeated here.

[0038] The above description is merely a description of preferred embodiments of the present invention and is not intended to limit the scope of the present invention in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the present invention.

Claims

1. A semiconductor substrate regeneration device, characterized in that, include: The device comprises an outer frame body, a cleaning machine, a UV exposure machine, and a robotic arm. The outer frame body encloses a process chamber. The cleaning machine, the UV exposure machine, and the robotic arm are all disposed within the process chamber, with the robotic arm positioned between the cleaning machine and the UV exposure machine. The cleaning machine includes a device body, a substrate stage, cleaning fluid nozzles, etching fluid nozzles, developing fluid nozzles, and a carbon dioxide-water megasonic swing arm. The device body has a receiving cavity, and the substrate stage is disposed within the receiving cavity. The cleaning fluid nozzles, the etching fluid nozzles, and the developing fluid nozzles are respectively disposed on the inner wall of the receiving cavity. The carbon dioxide-water megasonic swing arm is connected to the device body and is configured to swing above the substrate stage.

2. The semiconductor substrate regeneration equipment according to claim 1, characterized in that, The cleaning machine further includes a splash guard, which is connected to the main body of the device at the opening of the accommodating cavity.

3. The semiconductor substrate regeneration equipment according to claim 1, characterized in that, The cleaning fluid nozzle, the etching fluid nozzle, and the developing fluid nozzle are all fan-shaped nozzles, and the spray angle of the fan-shaped nozzle is 30°~60°.

4. The semiconductor substrate regeneration equipment according to claim 1, characterized in that, The cleaning machine also includes: A rotary driver, which is connected to the substrate stage; And / or, A lifting driver is connected to the substrate stage.

5. The semiconductor substrate regeneration equipment according to claim 1, characterized in that, The UV exposure machine includes a housing and UV lamps. The housing has a window door, and the UV lamps are located inside the housing, with the UV lamps respectively located on the top and bottom plates of the housing.

6. The semiconductor substrate regeneration equipment according to claim 5, characterized in that, The wavelength range of the UV lamp is 185nm~254nm.

7. The semiconductor substrate regeneration equipment according to claim 1, characterized in that, The cleaning machine further includes a drain connector, which comprises a connecting pipe section, an etching solution pipe section, a developing solution pipe section, and a pneumatic valve. One end of the connecting pipe section is connected to the drain port on the main body of the device, and the other end is connected to the etching solution pipe section and the developing solution pipe section respectively. The connecting pipe section, the etching solution pipe section, and the developing solution pipe section are arranged in an inverted T-shape. The pneumatic valve is located at the connection between the connecting pipe section and the etching solution pipe section and the developing solution pipe section.

8. The semiconductor substrate regeneration equipment according to claim 7, characterized in that, From the connection point between the etching fluid pipe section and the connecting pipe section to the end of the etching fluid pipe section, the etching fluid pipe section is inclined downward at 5°.

9. The semiconductor substrate regeneration equipment according to claim 1, characterized in that, Also includes: FFU, which is located on the top of the outer frame body.

10. The semiconductor substrate regeneration equipment according to claim 1, characterized in that, The semiconductor substrate includes a mask template and a mask base.

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