Perovskite battery assembly and preparation method, system, power generation device and power consumption device

Abstract

The application relates to a perovskite battery assembly and a preparation method, system, power generation device and power consumption device. The perovskite battery assembly comprises a plurality of perovskite sub-batteries, and adjacent perovskite sub-batteries are spaced apart through third scribe grooves. The side wall of the third scribe groove has a profile shape formed by a plurality of protruding structures arranged along the length direction of the third scribe groove. The inclination angle of the protruding structure is 10-50 DEG, the distance between adjacent two protruding structures is 100-400 mu m, and the length direction of the third scribe groove intersects with the arrangement direction of adjacent perovskite sub-batteries. The perovskite battery assembly has good stability.

Description

[0001] Cross-references

[0002] This application claims priority to Chinese Patent Application No. 202610157945.7, filed on February 4, 2026, entitled "Perovskite Solar Cell Module and Preparation Method, System, Power Generation Device and Power Consumption Device", which is incorporated herein by reference in its entirety. Technical Field

[0003] This application relates to the field of solar cells, specifically to perovskite solar cell modules and their preparation methods, systems, power generation devices, and power consumption devices. Background Technology

[0004] With the rapid development of the new energy field, solar cells have been widely used in aerospace, industry, commerce, agriculture, and communications. Perovskite solar cells are devices that convert solar energy into electrical energy using the photoelectric conversion mechanism of perovskite crystal materials. They are currently the third generation of solar cells and have many advantages such as high photoelectric conversion efficiency, simple manufacturing process, and low production cost, and have been extensively studied in recent years.

[0005] Currently, in the fabrication process of perovskite solar cell modules, laser scribing is performed on the bottom electrode layer before depositing each functional layer to form the first scribing groove; laser scribing is performed on each functional layer after depositing the functional layer and before depositing the back electrode layer to form the second scribing groove; and laser scribing is performed on each functional layer on the back electrode layer and the bottom electrode layer after depositing the back electrode layer to form the third scribing groove.

[0006] Defects often exist at the edges of the grooves formed by laser scribing. Under thermal stress or external load, stress concentration can easily occur at the edges of the grooves, leading to edge splitting and damage to the battery assembly, thus affecting the stability of the battery assembly. Summary of the Invention

[0007] This application is made in view of the above-mentioned issues, and one of its objectives is to provide a perovskite solar cell module with good stability, a method for its preparation, a photovoltaic system, a power generation device, and a power consumption device.

[0008] To achieve the above objectives, a first aspect of this application provides a perovskite solar cell assembly, comprising a plurality of perovskite sub-cells, wherein adjacent perovskite sub-cells are spaced apart by a third scribed groove; the sidewall of the third scribed groove has a profile shape formed by a plurality of protrusions arranged along the length direction of the third scribed groove; the inclination angle of the protrusions is 10° to 50°, and the distance between two adjacent protrusions is 100 μm to 400 μm; the length direction of the third scribed groove intersects with the arrangement direction of the adjacent perovskite sub-cells.

[0009] By giving the sidewall of the third scribe line between adjacent perovskite sub-cells a profile shape formed by multiple protrusions arranged along the length of the third scribe line, and controlling the distance between adjacent protrusions and the tilt angle of the protrusions within the aforementioned range, this profile shape can effectively release temperature stress and temperature strain at the sidewall of the third scribe line under thermal cycling, reducing tensile and compressive strain caused by temperature shock, improving the overall lattice stability of the perovskite film, and reducing the impact of laser scribing defects on cell stability. This specific profile shape at the sidewall of the third scribe line can improve the stability of the cell module by preventing splitting damage at the edge of the scribe line under thermal stress or external load.

[0010] Among the structural parameters of the protruding structure, the tilt angle and the distance between adjacent protruding structures both affect the stress transmission path at the sidewall of the third scribe line groove, thus impacting the stress dispersion effect. By controlling the tilt angle of the protruding structure and the distance between adjacent protruding structures within the aforementioned range, it is beneficial to disperse the stress at the sidewall of the third scribe line groove, alleviate stress concentration, thereby improving the situation of splitting damage at the edge of the scribe line groove and enhancing the stability of the battery module.

[0011] In any embodiment, the tilt angle of the protruding structure is 15° to 45°. This is more conducive to optimizing the stress transmission path at the sidewall of the third scribe groove and further alleviating stress concentration.

[0012] In any embodiment, the tilt angle of the protruding structure is 25° to 45°. This is more conducive to optimizing the stress transmission path at the sidewall of the third scribe groove and further alleviating stress concentration.

[0013] In any embodiment, the distance between two adjacent protrusions is 100μm to 300μm. This is more conducive to alleviating stress concentration at the sidewall of the third scribe line groove, while also ensuring good structural continuity in the contour shape of the sidewall of the third scribe line groove.

[0014] In any embodiment, the distance between two adjacent protrusions is 150μm to 250μm. This is more conducive to alleviating stress concentration at the sidewall of the third scribe line groove, while also ensuring good structural continuity in the contour shape of the sidewall of the third scribe line groove.

[0015] In any embodiment, the protrusion structure has a dimension of 50μm to 200μm in the width direction of the third scribe groove.

[0016] In any embodiment, the protrusion structure includes one or more of arc-shaped protrusions, trapezoidal protrusions, and triangular protrusions.

[0017] In any embodiment, the protrusion structure extends continuously along the height direction of the third scribed groove. This further enhances the stability of the perovskite layer edge interface.

[0018] In any embodiment, the perovskite solar cell module further includes an insulating filler layer, wherein the perovskite sub-cell includes a perovskite layer, the insulating filler layer is filled within the third etched groove, and the elastic modulus of the insulating filler layer is greater than or equal to the elastic modulus of the perovskite layer.

[0019] The insulating filler layer within the third etched groove can suppress the lateral outward expansion of the perovskite lattice, mitigating lattice stretching and damage beyond the lattice itself. This helps prevent lateral damage to the perovskite lattice edges, improving the stability of the perovskite layer edge interface. This further enhances the stability of the perovskite layer edge interface.

[0020] In any embodiment, the elastic modulus of the insulating filler layer is 1 to 1.5 times that of the perovskite layer. This is more conducive to improving the stability of the perovskite layer edge interface.

[0021] In any embodiment, the coefficient of thermal expansion of the insulating filler layer is less than or equal to that of the perovskite layer. This is more conducive to reducing the compression and damage caused by the insulating filler layer to the edges of the perovskite sub-cell when heated.

[0022] In any embodiment, the coefficient of thermal expansion of the insulating filling layer is 0.8 to 1 times that of the perovskite layer. This is more conducive to reducing the compression and damage caused by the insulating filling layer to the edges of the perovskite sub-cell when heated.

[0023] In any embodiment, the insulating filler layer comprises graphene quantum dots and a polymer matrix; based on the total mass of the insulating filler layer, the mass fraction of the graphene quantum dots is 5% to 15%. This is beneficial for the insulating filler layer to have a suitable elastic modulus and coefficient of thermal expansion, while maintaining good insulation properties.

[0024] In any embodiment, the mass fraction of the graphene quantum dots is 5% to 10% based on the total mass of the insulating filler layer. This, in turn, improves the flexibility and insulation properties of the insulating filler layer while maintaining a suitable elastic modulus and coefficient of thermal expansion.

[0025] In any embodiment, the polymer matrix comprises one or more of polymethyl methacrylate, epoxy resin, polyimide, polyvinylidene fluoride, silicone rubber, polycarbonate, and polystyrene. This is advantageous for giving the insulating filler layer good flexibility, as well as suitable elastic modulus and coefficient of thermal expansion.

[0026] In any embodiment, the average particle size of the graphene quantum dots is 10 nm to 100 nm.

[0027] In any embodiment, the perovskite sub-cell includes a first electrode, a perovskite layer, and a second electrode stacked sequentially. The first electrode has a first scribed groove, and the sidewall of the first scribed groove has a contour shape formed by a plurality of protrusions arranged along the length of the first scribed groove. This helps to further improve the stability of the battery assembly by preventing splitting damage at the edge of the scribed groove under thermal stress or external loads.

[0028] In any embodiment, the perovskite layer has a second etched groove, and the sidewall of the second etched groove has a contour shape formed by a plurality of the protruding structures arranged along the length direction of the second etched groove. This helps to further improve the stability of the battery module by preventing splitting damage at the edge of the etched groove under thermal stress or external loads.

[0029] In any embodiment, the edge fracture energy of the perovskite solar cell module is 8 J / m. 2 ~16J / m 2 10J / m 2 ~16J / m 2 .

[0030] A second aspect of this application provides a method for preparing a perovskite solar cell module, comprising the following steps:

[0031] A perovskite layer is prepared on the first electrode;

[0032] A second electrode is prepared on the surface of the perovskite layer opposite to the first electrode;

[0033] A third laser scribing is performed on the second electrode and the perovskite layer to form a third scribe groove.

[0034] The sidewall of the third scribe groove has a contour shape formed by multiple protrusions arranged along the length of the third scribe groove; the inclination angle of the protrusions is 10°~50°, optionally 15°~45°, and further optionally 25°~45°, and the distance between two adjacent protrusions is 100μm~400μm, optionally 100μm~300μm.

[0035] By giving the sidewall of the third scribe line the specific contour shape described above, and controlling the distance between adjacent protrusions and the tilt angle of the protrusions within the aforementioned range, this contour shape can effectively release the temperature stress and strain at the sidewall of the third scribe line under thermal cycling, reducing tensile and compressive strain caused by temperature shock, improving the overall lattice stability of the perovskite film, and reducing the impact of laser scribing defects on battery stability. This specific contour shape at the sidewall of the third scribe line can improve the situation where the battery module experiences splitting damage at the edge of the scribe line under thermal stress or external load, thereby enhancing the stability of the battery module.

[0036] In any embodiment, after forming the third etched groove, the preparation method further includes the following steps: filling the third etched groove with an insulating filler, and forming an insulating filling layer in the third etched groove after annealing; the coefficient of thermal expansion of the insulating filling layer is less than or equal to the coefficient of thermal expansion of the perovskite layer; and / or, the elastic modulus of the insulating filling layer is greater than or equal to the elastic modulus of the perovskite layer. This helps to suppress the lateral outward expansion of the perovskite lattice, alleviate the situation of lattice stretching failure and exceeding the lattice itself in perovskite, and help to prevent the perovskite lattice edges from being laterally destroyed, thereby improving the stability of the perovskite layer edge interface.

[0037] In any embodiment, the annealing temperature is 85℃~100℃; the annealing time is 30min~60min; and the annealing is performed under a protective atmosphere. This facilitates the full release of internal stress in the insulating filler layer, improves the interfacial bonding between graphene quantum dots and the polymer matrix, enhances the compatibility between the insulating filler layer and the perovskite layer, and helps reduce oxidation of the battery module during annealing.

[0038] In any embodiment, the laser used for the third laser scribing is a femtosecond laser. This is advantageous for fabricating high-precision scribing groove structures.

[0039] In any embodiment, the power density of the femtosecond laser is 1×10⁻⁶. 5 W / cm 2 ~1×10 10 W / cm 2 The pulse width is 5fs~500fs, the spot overlap rate is 5%~80%, and the scanning speed is 1000mm / s~8000mm / s. This helps to avoid excessive ablation of the material, reduces the thermal impact of the laser on the perovskite layer, ensures the continuity of the contour shape of the groove sidewall, and thus helps to alleviate stress concentration.

[0040] In any embodiment, before preparing a perovskite layer on the first electrode, the preparation method further includes the following steps: performing a first laser scribing on the first electrode to form a first scribe groove; the sidewall of the first scribe groove has a contour shape formed by arranging a plurality of the protrusion structures along the length direction of the first scribe groove.

[0041] In any embodiment, after the perovskite layer is prepared on the first electrode and before the second electrode is prepared on the surface of the perovskite layer opposite to the first electrode, the preparation method further includes the following steps: performing a second laser scribing on the perovskite layer to form a second scribing groove; the sidewall of the second scribing groove has a contour shape formed by a plurality of the protrusion structures arranged along the length direction of the second scribing groove.

[0042] A third aspect of this application provides a photovoltaic system comprising a perovskite cell module according to the first aspect of this application, or a perovskite cell module prepared by the method for preparing a perovskite cell module according to the second aspect of this application.

[0043] A fourth aspect of this application provides a power generation device, including a perovskite battery module according to the first aspect of this application, or a perovskite battery module prepared by the method for preparing a perovskite battery module according to the second aspect of this application.

[0044] A fifth aspect of this application provides an electrical device comprising a perovskite battery module according to the first aspect of this application, or a perovskite battery module prepared by the method for preparing a perovskite battery module according to the second aspect of this application.

[0045] Details of one or more embodiments of this application are set forth in the following drawings and description. Other features, objects, and advantages of this application will become apparent from the specification, drawings, and claims. Attached Figure Description

[0046] To better describe and illustrate embodiments or examples of the applications disclosed herein, reference may be made to one or more accompanying drawings. Additional details or examples used to describe the drawings should not be considered as limiting the scope of any of the disclosed applications, the embodiments or examples currently described, or the best mode of conduct of these applications as currently understood. Furthermore, throughout the drawings, the same reference numerals denote the same parts. In the drawings:

[0047] Figure 1 This is a schematic diagram of the structure of a perovskite solar cell module according to one embodiment of this application.

[0048] Figure 2 This is a top view schematic diagram of two adjacent perovskite sub-cells in a perovskite solar cell assembly according to one embodiment of this application.

[0049] Figure 3 This is a top view of a perovskite sub-cell with an arc-shaped protrusion structure on the sidewall of the third scribed groove in one embodiment of this application.

[0050] Figure 4 This is a top view of a perovskite sub-cell with a trapezoidal protrusion structure on the sidewall of the third scribed groove in one embodiment of this application.

[0051] Figure 5 This is a top view of a perovskite sub-cell with a triangular protrusion structure on the sidewall of the third groove, according to one embodiment of this application.

[0052] Figure 6 The results are from the edge stress simulation analysis of the perovskite sub-cell in Comparative Example 1 of this application.

[0053] Figure 7 The results are from the edge stress simulation analysis of the perovskite sub-cell in Example 1 of this application.

[0054] Figure 8 This is a schematic diagram of the structure of a perovskite solar cell module according to another embodiment of this application.

[0055] Explanation of reference numerals in the attached figures:

[0056] 10. Perovskite solar cell module; 11. Perovskite sub-cell; 12. Third etched groove; 13. Protruding structure; 14. Insulating filling layer; 15. First etched groove; 16. Second etched groove; 17. Substrate; 111. First electrode; 112. Perovskite layer; 113. Second electrode; 114. Electron transport layer; 115. Hole transport layer. Detailed Implementation

[0057] The following detailed description, with appropriate reference to the accompanying drawings, discloses some embodiments of the perovskite solar cell module, its fabrication method, system, power generation device, and power consumption device of this application. However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repetitive descriptions of practically identical structures may be omitted. This is to avoid unnecessarily lengthy descriptions and to facilitate understanding by those skilled in the art. Furthermore, the accompanying drawings and the following description are provided to enable those skilled in the art to fully understand this application and are not intended to limit the subject matter of the claims.

[0058] The "range" disclosed in this application is defined by a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, which define the boundaries of a particular range. Ranges defined in this way can include or exclude endpoints and can be arbitrarily combined; that is, any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60~120 and 80~110 are listed for a specific parameter, it is also expected that ranges of 60~110 and 80~120 are also included. Furthermore, if minimum range values ​​of 1 and 2 are listed, and if maximum range values ​​of 3, 4, and 5 are listed, then the following ranges are all expected: 1~3, 1~4, 1~5, 2~3, 2~4, and 2~5. In this application, unless otherwise stated, the numerical range "a~b" represents a shortened representation of any combination of real numbers between a and b, where a and b are real numbers. For example, the numerical range "0~5" indicates that all real numbers between "0" and "5" have been listed in this document; "0~5" is simply a shortened representation of these numerical combinations. Furthermore, stating that a parameter is an integer ≥2 is equivalent to disclosing that the parameter is, for example, an integer 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc. For instance, stating that a parameter is an integer selected from "2~10" is equivalent to listing the integers 2, 3, 4, 5, 6, 7, 8, 9, and 10.

[0059] Unless otherwise specified, all embodiments and optional embodiments of this application can be combined to form new technical solutions.

[0060] Unless otherwise specified, all steps in this application may be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or it may include steps (b) and (a) performed sequentially. For example, the mention that the method may also include step (c) indicates that step (c) may be added to the method in any order. For example, the method may include steps (a), (b), and (c), or it may include steps (a), (c), and (b), or it may include steps (c), (a), and (b), etc.

[0061] In this application, unless otherwise specified, A (e.g., B) means that B is a non-limiting example of A, and it is understood that A is not limited to B.

[0062] In this application, the terms "multiple" or "various" are used unless otherwise specified, referring to a quantity greater than or equal to 2. For example, "one or more" means one or more types.

[0063] The terms “combinations of,” “any combination of,” and “any combination of” used in this article include all suitable combinations of any two or more of the listed items.

[0064] In this document, the term "suitable" as used in "suitable combination", "suitable method", "any suitable method", etc., refers to the technical solution that enables the implementation of this application.

[0065] In this document, terms such as "preferred," "better," "more suitable," and "ideal" are merely descriptions of more effective implementation methods or embodiments, and should be understood not to limit the scope of protection of this application. If multiple "preferred" terms appear in a technical solution, unless otherwise specified and there are no contradictions or mutual constraints, each "preferred" term shall be independent.

[0066] In this application, terms such as "further," "even further," and "particularly" are used to describe purposes and indicate differences in content, but should not be construed as limiting the scope of protection of this application.

[0067] In this application, the terms "first aspect," "second aspect," "third aspect," "fourth aspect," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or quantity, nor should they be construed as implicitly indicating the importance or quantity of the indicated technical features. Moreover, "first," "second," "third," "fourth," etc., serve only as a non-exhaustive enumeration and should be understood not to constitute a closed limitation on quantity.

[0068] In this application, the term "room temperature" generally refers to 4 °C to 35 °C, and may refer to 20 °C ± 5 °C. In some embodiments of this application, room temperature refers to 20 °C to 30 °C.

[0069] In this application, if the unit of a data range is only followed by the right endpoint, it indicates that the units of the left and right endpoints are the same. For example, 3~5 h or 3 h~5 h both indicate that the units of the left endpoint "3" and the right endpoint "5" are both h (hours).

[0070] The weight of the relevant components mentioned in the embodiments of this application can refer not only to the content of each component, but also to the weight ratio between the components. Therefore, any scaling up or down of the content of the relevant components according to the embodiments of this application is within the scope disclosed in the embodiments of this application.

[0071] Currently, in the process of fabricating perovskite solar cell modules, defects are often present at the edges of the grooves formed after laser scribing. This makes it easy for stress concentration to occur at the edges of the grooves under thermal stress or external loads, which can lead to edge splitting and damage of the solar cell module, affecting its stability.

[0072] For this, please refer to Figures 1 to 5 One embodiment of this application provides a perovskite solar cell assembly 10, including a plurality of perovskite sub-cells 11, with adjacent perovskite sub-cells 11 spaced apart by a third etched groove 12; the sidewall of the third etched groove 12 has a plurality of protrusions 13 along the length direction of the third etched groove 12 (e.g., Figure 2 The contour shape formed by the arrangement of the protrusions 13 (in the direction shown in X); the tilt angle of the protrusions 13 is 10°~50°, and the distance between two adjacent protrusions 13 is 100μm~400μm; the length direction of the third groove 12 intersects with the arrangement direction of the adjacent perovskite sub-cells 11.

[0073] It is understood that the length direction of the third groove 12 is the same as the extension direction of the third groove 12. The extension direction of the third groove 12 intersects the arrangement direction of the adjacent perovskite sub-cells 11. Optionally, the extension direction of the third groove 12 is perpendicular to the arrangement direction of the adjacent perovskite sub-cells 11, that is, the length direction of the third groove 12 is perpendicular to the arrangement direction of the adjacent perovskite sub-cells 11. Here, a protruding structure refers to a structure that protrudes from one sidewall of the third groove 12 toward its opposite sidewall.

[0074] like Figure 1 As shown, the perovskite sub-cell 11 includes a first electrode 111, a perovskite layer 112, and a second electrode 113 stacked along the thickness direction of the perovskite sub-cell 11. The perovskite layer 112 is disposed between the first electrode 111 and the second electrode 113. The thickness direction of the perovskite sub-cell intersects the length direction along the third etched groove 12. When the perovskite layer 112 is illuminated, the internal electrons gain energy and break free from the light-absorbing layer to form negatively charged electron carriers and positively charged hole carriers, thus creating electron-hole pairs. The free electrons and free holes move in opposite directions, causing them to flow. These currents are introduced into the external circuit through the two electrodes, forming an external current and realizing the conversion of light energy into electrical energy.

[0075] In the traditional fabrication process of perovskite solar cell module 10, a laser is typically used to scribble a straight line on the second electrode 113 and the perovskite layer 112 to form a third groove 12 in a straight line shape. According to density functional theory (DFT) calculations, the electronic structure of the perovskite material changes at the laser scribing interface, resulting in uneven local stress distribution on the sidewalls of the groove in the perovskite solar cell module 10. This makes the edge of the groove prone to splitting and damage under thermal stress or external load, affecting the stability of the solar cell module.

[0076] The perovskite solar cell module 10 described above in this application achieves this by having the sidewall of the third groove 12 between adjacent perovskite sub-cells 11 have a contour shape formed by multiple protrusions 13 arranged along the length direction of the third groove 12; and controlling the distance between adjacent protrusions 13 and the tilt angle of the protrusions 13 within the aforementioned range. This results in the sidewall of the third groove 12 forming a contour shape with protrusions of specific parameters. This contour shape enables a continuous distribution of the stress field at the sidewall of the third groove 12, causing the mechanical impedance (the material's resistance to deformation) to change continuously at the sidewall of the third groove 12, thereby alleviating stress concentration.

[0077] Under thermal cycling, this contour shape can effectively release the temperature stress and strain at the sidewall of the third scribe line groove 12, reduce the tensile and compressive strain caused by temperature shock, improve the overall lattice stability of the perovskite film, and reduce the impact of laser scribing defects on battery stability. The specific contour shape at the sidewall of the third scribe line groove 12 can improve the situation where the battery module experiences splitting damage at the edge of the scribe line groove under thermal stress or external load, thus enhancing the stability of the battery module.

[0078] Among the structural parameters of the protruding structure 13, the tilt angle and the distance between adjacent protruding structures 13 both affect the stress transmission path at the sidewall of the third scribe groove 12, thus affecting the stress dispersion effect. By controlling the tilt angle of the protruding structure 13 and the distance between adjacent protruding structures 13 within the above-mentioned range, it is beneficial to disperse the stress at the sidewall of the third scribe groove 12, alleviate stress concentration, thereby improving the situation of splitting damage at the edge of the scribe groove and enhancing the stability of the battery assembly.

[0079] It should be noted that, as Figure 3 , Figure 4 and Figure 5As shown in L, "the distance between two adjacent protrusions 13" refers to the straight-line distance between corresponding points of two adjacent protrusions 13. "Corresponding points" refer to the bottom endpoints on the same side of two adjacent protrusions 13 along the length of the third groove 12. The shapes of two adjacent protrusions 13 may be the same or different. Two adjacent protrusions 13 may be regular-shaped protrusions or partially or entirely irregular-shaped protrusions.

[0080] "The tilt angle of the protrusion 13" refers to the arithmetic mean tilt angle of the protrusion 13. The arithmetic mean tilt angle is defined as follows: A straight line is drawn from the vertex of the protrusion 13 (the highest point of the protrusion) to one end of the bottom edge of the protrusion 13 (e.g., ...). Figure 3 , Figure 4 and Figure 5 As shown in L1), the angle between this straight line and the bottom edge of the protruding structure 13 is denoted as α1; another straight line is drawn using the vertex of the protruding structure 13 and the other edge point of the bottom edge of the protruding structure 13 as shown in L1 (e.g., ...). Figure 3 , Figure 4 and Figure 5 As shown in L2), the angle between the straight line and the bottom edge of the protruding structure 13 is denoted as α2; then the arithmetic mean tilt angle of the protruding structure 13 is (α1+α2) / 2.

[0081] It should be noted that the distance between two adjacent protrusions 13 and the tilt angle of the protrusions 13 can be measured in the scanning electron microscope image of the third scribe groove 12. For example... Figure 4 As shown, when there are multiple highest points in the protrusion structure 13, such as a trapezoidal protrusion structure, one endpoint of the top edge of the trapezoid is used as the vertex. The edge point refers to the endpoint of the bottom edge of the protrusion structure.

[0082] It is understood that the tilt angle of the protruding structure 13 can be 10°, 11°, 12°, 13°, 14°, 15°, 16°, 17°, 18°, 19°, 20°, 21°, 22°, 23°, 24°, 25°, 26°, 27°, 28°, 29°, 30°, 31°, 32°, 33°, 34°, 35°, 36°, 37°, 38°, 39°, 40°, 41°, 42°, 43°, 44°, 45°, 46°, 47°, 48°, 49°, 50°, or any value within the range formed by any two of the above values.

[0083] It is understood that the distance between adjacent protrusions 13 can be 100μm, 110μm, 120μm, 130μm, 140μm, 150μm, 160μm, 170μm, 180μm, 190μm, 200μm, 210μm, 220μm, 230μm, 240μm, 250μm, 260μm, 270μm, 280μm, 290μm, 300μm, 310μm, 320μm, 330μm, 340μm, 350μm, 360μm, 370μm, 380μm, 390μm, 400μm, or any value within the range formed by any two of the above values.

[0084] In some embodiments, the perovskite cell assembly 10 further includes an insulating filler layer 14, the perovskite sub-cell 11 includes a perovskite layer 112, the insulating filler layer 14 is filled in the third scribed groove 12, and the elastic modulus of the insulating filler layer 14 is 1 to 1.5 times the elastic modulus of the perovskite layer 112.

[0085] The insulating filling layer 14 filling the third groove 12 can suppress the lateral outward expansion of the perovskite lattice, alleviate the situation where the perovskite lattice is stretched and broken beyond the lattice itself, and help to prevent the perovskite lattice edge from being damaged laterally, thus improving the stability of the perovskite layer edge interface. The perovskite solar cell module 10 described above in this application is not prone to splitting damage at the edge of the groove under thermal stress or external load, and has good stability.

[0086] It is understood that the elastic modulus of the insulating filler layer 14 can be 1, 1.1, 1.2, 1.3, 1.4, 1.5 times, or any value within the range formed by any two of the above values, of the elastic modulus of the perovskite layer 112. The elastic modulus of the insulating filler layer 14 is tested using the static tensile method, referring to GB / T 1040.1-2018 "Determination of Tensile Properties of Plastics".

[0087] In some embodiments, the tilt angle of the protrusion structure 13 is 15°~45°, and more preferably 25°~45°. This is more conducive to optimizing the stress transmission path at the sidewall of the third scribe groove 12, further alleviating stress concentration, and reducing the difficulty of processing.

[0088] In some embodiments, the distance between two adjacent protrusions 13 is 100μm to 300μm, and more preferably 150μm to 250μm. This is more conducive to alleviating stress concentration at the sidewall of the third groove 12, while also ensuring that the contour shape of the sidewall of the third groove 12 has better structural continuity.

[0089] In some specific examples, the distance between two adjacent protrusions 13 is 200 μm and the tilt angle of the protrusions 13 is 45°.

[0090] In some embodiments, the protrusion structure 13 is in the width direction of the third groove 12 (e.g. Figure 2 The dimension of the protrusion 13 (in the direction shown by Y) is 50μm to 200μm. Considering the processing accuracy of laser scribing, it is preferable to control the dimension of the protrusion 13 in the width direction of the third scribing groove 12 within the above range. In other words, the dimension of the protrusion 13 in the width direction of the third scribing groove 12 is also the distance between the highest point of the protrusion 13 and the bottom edge of the protrusion 13, such as... Figure 3 , Figure 4 and Figure 5 As shown in H.

[0091] It is understood that the width direction of the third scribed groove 12 intersects the length direction of the third scribed groove 12. Further, the width direction of the third scribed groove 12 is parallel to the arrangement direction of the adjacent perovskite sub-cells 11. Optionally, the width direction of the third scribed groove 12 is perpendicular to the length direction of the third scribed groove 12.

[0092] It is understood that the dimensions of the protrusion structure 13 in the width direction of the third scribe groove 12 can be 50μm, 60μm, 70μm, 80μm, 90μm, 100μm, 110μm, 120μm, 130μm, 140μm, 150μm, 160μm, 170μm, 180μm, 190μm, 200μm, or any value within the range formed by any two of the above values.

[0093] like Figures 3 to 5 As shown, in some embodiments, the protrusion structure 13 includes one or more of arc-shaped protrusions, trapezoidal protrusions, and triangular protrusions. Multiple such protrusion structures 13 are arranged along the length of the third scribe groove 12 on the sidewall of the third scribe groove 12 to form a serrated outline shape. In some specific examples, the arc-shaped protrusion is a circular arc-shaped protrusion, the trapezoidal protrusion is an isosceles trapezoidal protrusion, and the triangular protrusion is an isosceles triangular protrusion.

[0094] It is understandable that when the protrusion structure 13 is an arc-shaped protrusion, the distance L between adjacent protrusion structures 13 refers to the straight-line distance between the endpoints of the bottom edges on the same side of two adjacent arc-shaped protrusions. The height H of the arc-shaped protrusion refers to the distance between the arc vertex and the arc bottom edge. The arithmetic mean tilt angle of the arc-shaped protrusion is calculated by the following method: draw a straight line from the vertex of the arc-shaped protrusion to one edge point of the bottom edge of the arc-shaped protrusion, and the angle between this equivalent chord and the bottom edge of the arc-shaped protrusion is denoted as α1; draw another straight line from the vertex of the arc-shaped protrusion to the other edge point of the bottom edge of the arc-shaped protrusion, and the angle between this straight line and the bottom edge of the arc-shaped protrusion is denoted as α2; the arithmetic mean tilt angle of the arc-shaped protrusion = (α1 + α2) / 2.

[0095] When the protrusion structure 13 is a trapezoidal protrusion, the distance L between adjacent protrusion structures 13 refers to the straight-line distance between the endpoints of the base edges on the same side of two adjacent trapezoidal protrusions. The height H of the trapezoidal protrusion refers to the distance between any point on the top edge (i.e., the upper base edge) of the trapezoid and the lower base edge of the trapezoid. The equivalent average tilt angle of the trapezoidal protrusion is calculated by the following method: draw a straight line with one endpoint of the top edge of the trapezoid and the edge point of the base edge on the same side of the trapezoid, and the angle between this straight line and the base edge of the trapezoid is denoted as α1; draw another straight line with the other endpoint of the top edge of the trapezoid and the edge point of the base edge on the same side of the trapezoid, and the angle between this straight line and the base edge of the trapezoid is denoted as α2; the arithmetic average tilt angle of the arc-shaped protrusion = (α1 + α2) / 2.

[0096] When the protrusion structure 13 is a triangular protrusion, the distance L between adjacent protrusion structures 13 refers to the straight-line distance between the endpoints of the base edges on the same side of two adjacent triangular protrusions. The height H of the triangular protrusion refers to the distance between the vertex and the base of the triangle. The equivalent average tilt angle of the triangular protrusion is calculated as follows: draw a straight line from the vertex of the triangular protrusion to one edge point of the base edge of the triangular protrusion, and denot the angle between this straight line and the base edge of the triangular protrusion as α1; draw another straight line from the vertex of the triangular protrusion to the other edge point of the base edge of the triangular protrusion, and denot the angle between this straight line and the base edge of the triangular protrusion as α2; the arithmetic average tilt angle of the triangular protrusion = (α1 + α2) / 2.

[0097] In some embodiments, the protrusion structure 13 is arranged continuously along the height direction of the third scribe groove 12. "Continuously along the height direction" means that the protrusion structure 13 is continuously and uninterruptedly arranged along the height direction of the third scribe groove 12, spanning the entire height range of the sidewall of the third scribe groove 12, without any interruption or segmentation. It is understood that during the process of scribing the perovskite layer using a laser, the aforementioned continuously arranged protrusion structure 13 can be formed on the sidewall of the third scribe groove 12. In other words, the dimension of the protrusion structure 13 along the height direction of the third scribe groove 12 is the same as the height of the sidewall of the third scribe groove 12.

[0098] Generally, the height direction of the third groove 12 is parallel to the thickness direction of the perovskite sub-cell 11. In some embodiments, the height direction of the third groove 12 intersects the width direction and the length direction of the third groove 12 in pairs. In some specific embodiments, the height direction of the third groove 12 is perpendicular to the width direction and the length direction of the third groove 12 in pairs.

[0099] In some embodiments, the coefficient of thermal expansion (CTE) of the insulating filler layer 14 is less than or equal to that of the perovskite layer 112. Thus, when the perovskite cell assembly 10 is heated, the insulating filler layer 14 material filling the third groove 12 will not undergo significant deformation due to thermal stress, resulting in less compression and edge damage to the edges of the perovskite sub-cells 11. The coefficient of thermal expansion of the insulating filler layer 14 can be determined using thermomechanical analysis, referring to GB / T 10294-2022 "Determination of Steady-State Thermal Resistance and Related Properties of Thermal Insulation Materials - Protective Hot Plate Method". It should be noted that "insulation" does not mean absolutely "non-conductive," but rather that it exhibits a high-resistivity state during device operation, with extremely high volume resistivity and negligible electronic conduction, preventing conduction between adjacent perovskite sub-cells 11.

[0100] In some specific examples, the coefficient of thermal expansion of the insulating filler layer 14 is 0.8 to 1 times that of the perovskite layer 112. Controlling the coefficient of thermal expansion of the insulating filler layer 14 relative to the perovskite layer 112 within this range is more beneficial in reducing the compression and damage caused by the insulating filler layer 14 to the edge of the perovskite sub-cell 11 when heated. It is understood that the coefficient of thermal expansion of the insulating filler layer 14 can be any value within the range formed by 0.8, 0.85, 0.9, 0.95, 1 times, or any two of the above values ​​of the coefficient of thermal expansion of the perovskite layer 112.

[0101] In some embodiments, the insulating filler layer 14 comprises graphene quantum dots and a polymer matrix; based on the total mass of the insulating filler layer 14, the mass fraction of graphene quantum dots is 5% to 15%. The polymer matrix facilitates a tight bond between the insulating filler layer 14 and the sidewalls of the third scribed groove 12, and imparts good processing performance and flexibility to the insulating filler layer 14; the graphene quantum dots have high thermal conductivity and mechanical strength, and the elastic modulus and coefficient of thermal expansion of the insulating filler layer 14 can be controlled. Specifically, the insulating filler layer 14 can be removed from the third scribed groove 12, the graphene quantum dots can be separated from the polymer matrix, and the proportion of graphene quantum dots in the total mass of the graphene quantum dots and the polymer matrix can be measured to obtain the mass fraction of graphene quantum dots in the insulating filler layer 14.

[0102] Controlling the mass fraction of graphene quantum dots in the insulating filler layer 14 within the aforementioned range is beneficial for the insulating filler layer 14 to possess suitable elastic modulus and coefficient of thermal expansion, while simultaneously maintaining good insulation properties. It is understood that the mass fraction of graphene quantum dots in the insulating filler layer 14 can be 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, or any value within the range formed by any two of the aforementioned values.

[0103] In some specific examples, the mass fraction of graphene quantum dots is 5% to 10% based on the total mass of the insulating filler layer 14. In this way, while maintaining the insulating filler layer 14 with a suitable elastic modulus and coefficient of thermal expansion, it is more conducive to improving the flexibility and insulation of the insulating filler layer 14.

[0104] In some embodiments, the polymer matrix includes one or more of polymethyl methacrylate (PMMA), epoxy resin (EP), polyimide (PI), polyvinylidene fluoride (PVDF), silicone rubber, polycarbonate (PC), and polystyrene (PS). Using the above-mentioned polymers as the polymer matrix material for the insulating filler layer 14 is beneficial in giving the insulating filler layer 14 good flexibility and suitable elastic modulus and coefficient of thermal expansion. The type of polymer matrix can be determined by identifying characteristic functional groups using Fourier transform infrared spectroscopy.

[0105] In some embodiments, the average particle size of the graphene quantum dots is 10 nm to 100 nm. It is understood that the average particle size of the graphene quantum dots can be 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, or any value within the range formed by any two of the above values.

[0106] In some embodiments, the perovskite sub-cell 11 includes a first electrode 111, a perovskite layer 112, and a second electrode 113 stacked sequentially. The first electrode 111 has a first etched groove 15 that cuts through the first electrode 111 along its thickness direction. The perovskite layer 112 has a second etched groove 16 that penetrates the perovskite layer and is filled with a conductive structure. The first etched groove 15, the second etched groove 16, and the third etched groove 12 are combined to divide and connect adjacent perovskite sub-cells 11 in series, thus forming a series connection between adjacent perovskite sub-cells 11.

[0107] In some embodiments, the conductive structure is used to connect the first electrode 111 of one perovskite sub-cell 11 to the second electrode 113 of the other perovskite sub-cell 11. Further, the material of the conductive structure includes one or more of metallic materials, transparent conductive materials, carbon materials, etc. Exemplarily, metallic materials include one or more of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, tungsten, and their alloys. Exemplarily, transparent conductive materials may include one or more of indium tin oxide, lanthanide-doped indium oxide, boron-doped zinc oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, aluminum-doped zinc oxide, gallium zinc oxide, etc.

[0108] In some embodiments, the conductive structure is made of the same material as the second electrode 113. Furthermore, the conductive structure is integrally formed with the second electrode 113, thus simplifying the manufacturing process.

[0109] In some embodiments, the sidewall of the first scribed groove 15 has a contour shape formed by a plurality of protrusions 13 arranged along the length of the first scribed groove 15. By adopting the aforementioned contour shape with a plurality of protrusions 13 on the sidewall of the first scribed groove 15, it is beneficial to further improve the situation where the battery assembly is subjected to thermal stress or external loads and cracking damage occurs at the edge of the scribed groove, thereby further improving the stability of the battery assembly.

[0110] It should be noted that the length direction of the first scribed groove 15 is the extension direction of the first scribed groove 15. The extension direction of the first scribed groove 15 intersects with the arrangement direction of the adjacent perovskite sub-cells 11. Optionally, the extension direction of the first scribed groove 15 is perpendicular to the arrangement direction of the adjacent perovskite sub-cells 11, that is, the length direction of the first scribed groove 15 is perpendicular to the arrangement direction of the adjacent perovskite sub-cells 11.

[0111] In some embodiments, the sidewall of the second scribe groove 16 has a profile shape formed by a plurality of protrusions 13 arranged along the length of the second scribe groove 16. By adopting the aforementioned profile shape with a plurality of protrusions 13 on the sidewall of the second scribe groove 16, it is beneficial to further improve the situation where the battery assembly is subjected to thermal stress or external loads and cracking damage occurs at the edge of the scribe groove, thereby further improving the stability of the battery assembly.

[0112] It should be noted that the length direction of the second scribed groove 16 is the extension direction of the second scribed groove 16. The extension direction of the second scribed groove 16 intersects with the arrangement direction of the adjacent perovskite sub-cells 11. Optionally, the extension direction of the second scribed groove 16 is perpendicular to the arrangement direction of the adjacent perovskite sub-cells 11, that is, the length direction of the second scribed groove 16 is perpendicular to the arrangement direction of the adjacent perovskite sub-cells 11.

[0113] It is understood that the protruding structure 13 on the sidewall of the first scribe groove 15 can be a protruding structure 13 with the same morphology as the protruding structure 13 on the sidewall of the third scribe groove 12 described above, or a protruding structure 13 with a different morphology than the protruding structure 13 on the sidewall of the third scribe groove 12, and the parameters of the two protruding structures 13 can be the same or different; similarly, the protruding structure 13 on the sidewall of the second scribe groove 16 can also be a protruding structure 13 with the same morphology as the protruding structure 13 on the sidewall of the third scribe groove 12 described above, or a protruding structure 13 with a different morphology than the protruding structure 13 on the sidewall of the third scribe groove 12, and the parameters of the two protruding structures 13 can be the same or different. Further details will not be elaborated here.

[0114] Please see Figure 1 In some embodiments, the perovskite solar cell assembly 10 further includes a substrate 17 located on the side of the first electrode 111 opposite to the perovskite layer 112. The substrate 17 serves to support the perovskite solar cell assembly 10. The substrate 17 can be, but is not limited to, a rigid substrate or a flexible substrate. In some embodiments, the flexible substrate may be made of, for example (but not limited to), organic polymer materials, and further, may be a mixture of one or more of the following materials in different proportions: including but not limited to polyvinyl alcohol (PVA), polyester (PET), polyimide (PI), polyethylene naphthalate (PEN), polydimethylsiloxane (PDMS), etc. The rigid substrate may be made of glass, such as tempered glass, semi-tempered glass, float glass, quartz glass, etc. The individual perovskite sub-cells 11 are arranged side by side on the substrate 17 and spaced apart by a third scribed groove 12.

[0115] In some embodiments, the perovskite sub-cell 11 may further include a hole transport layer and / or an electron transport layer, one of which is located between the first electrode and the perovskite layer, and the other is located between the perovskite layer and the second electrode. The provision of the electron transport layer and / or hole transport layer is beneficial for improving the extraction and transport of electrons and holes generated in the perovskite layer, thereby improving the photoelectric conversion efficiency of the perovskite sub-cell 11. It is understood that the hole transport layer and the electron transport layer may exist simultaneously or separately. When both exist simultaneously, one of the hole transport layer and the electron transport layer is located between the first electrode and the perovskite layer, and the other is located between the perovskite light-absorbing layer and the second electrode. When both do not exist simultaneously, taking the presence of a hole transport layer as an example, the hole transport layer is located between the first electrode and the perovskite layer, or between the perovskite layer and the second electrode.

[0116] Please see Figure 1In some embodiments, the perovskite sub-cell 11 may further include an electron transport layer 114 and a hole transport layer 115. The first electrode 111, the electron transport layer 114, the perovskite layer 112, the hole transport layer 115, and the second electrode 113 are sequentially stacked on the substrate 17 to form the perovskite sub-cell 11.

[0117] Please see Figure 8 In other embodiments, the perovskite sub-cell 11 may further include an electron transport layer 114 and a hole transport layer 115. The first electrode 111, the hole transport layer 115, the perovskite layer 112, the electron transport layer 114, and the second electrode 113 are sequentially stacked on the substrate 17 to form the perovskite sub-cell 11.

[0118] In some embodiments, the electron transport layer 114 is used to extract and transport electrons, improving carrier transport efficiency and thus increasing the photoelectric conversion efficiency of the perovskite sub-cell 11. The electron transport layer 114 includes an electron transport material. This application does not impose any particular limitation on the electron transport material used in the electron transport layer 114; commonly used electron transport materials in the art can be used. Exemplarily, the electron transport material includes at least one of imide compounds, quinone compounds, fullerenes and their derivatives, metal oxides, semiconductor material oxides, titanates, fluorides and their derivatives, and materials obtained by doping or passivation. Exemplarily, the imide compound includes at least one of phthalimide, succinimide, N-bromosuccinimide, glutarimide, or maleimide. Exemplarily, the quinone compound includes at least one of benzoquinone, naphthoquinone, phenanthrenequinone, or anthraquinone. Exemplarily, the fullerene and its derivatives include fullerene C 60 Fullerene C 70 PCBM([6,6]-phenyl-C 61 methyl butyrate), [6,6]-phenyl C 71 Methyl butyrate (PC) 71 At least one of BM. Exemplarily, the metal element in the metal oxide includes at least one of Mg, Cd, Zn, In, Pb, W, Sb, Bi, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga, and Cr; optionally, the metal oxide includes at least one of tin oxide (SnO2), zinc oxide (ZnO), and titanium oxide (TiO2). Exemplarily, the semiconductor material oxide includes silicon oxide. Exemplarily, the titanate includes at least one of strontium titanate and calcium titanate. Exemplarily, the fluoride includes at least one of lithium fluoride and calcium fluoride.

[0119] This application does not impose any particular limitation on the thickness of the electron transport layer 114; any thickness conventionally used in the art for the electron transport layer 114 may be adopted. For example, the thickness of the electron transport layer 114 is in the range of 0.1 nm to 100 nm.

[0120] In some embodiments, the hole transport layer 115 is used to extract and transport holes, thereby increasing the carrier transport rate and thus improving the photoelectric conversion efficiency of the perovskite sub-cell 11. The hole transport layer 115 includes a hole transport material. This application does not impose any particular limitation on the hole transport material used in the hole transport layer 115; hole transport materials commonly used in the art can be used. Exemplarily, the hole transport materials may independently include one or more of the following: [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly-3-hexylthiophene, triphenylamine with a triphenylene core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-aniline)carbazole-spirobisfluorene, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, cuprous oxide, and their derivatives. ; and / or include one or more of the following materials that have been doped or passivated: [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly-3-hexylthiophene, triphenylamine with a triphenylene core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-aniline)carbazole-spirobisfluorene, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate), polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, cuprous oxide, and carbazole phosphate.

[0121] This application does not impose any particular limitation on the thickness of the hole transport layer 115; any thickness conventionally used in the art for the hole transport layer 115 may be adopted. For example, the thickness of the hole transport layer 115 is in the range of 0.1 nm to 100 nm.

[0122] In some embodiments, the perovskite layer 112 comprises a material with the chemical formula ABX3 or A2CDX6; wherein A comprises at least one inorganic or organic monovalent cation, B comprises at least one inorganic divalent cation, C comprises at least one inorganic monovalent cation, D comprises at least one inorganic trivalent cation, and X comprises at least one monovalent anion.

[0123] For example, organic monovalent cations include (NR1R2R3R4). + (R1R2N=CR3R4) + (R1R2N-C(R5)=NR3R4) + Or (R1R2N-C(NR5R6)=NR3R4) + One or more of the following, wherein R1, R2, R3, R4, R5 and R6 are each independently selected from H, substituted or unsubstituted C1 to C6. 20Alkyl or substituted or unsubstituted aryl groups. Optionally, the organic monovalent cation includes (H₂N=CH-NH₂). + (abbreviated as FA), CH3NH3 + (abbreviated as MA), one or more of the following: dimethylamine cation, ethylamine cation, propylamine cation, butylamine cation, pentamine cation, hexamine cation, and imidazole cation.

[0124] For example, the inorganic monovalent cation includes: Li + Na + K + 、Rb + Cs + Cu + Ag + Au + or Hg + One or more of them.

[0125] For example, the inorganic divalent cation includes: Pb 2+ Sn 2+ Be 2+ Mg 2+ Ca 2+ 、Sr 2+ Ba 2+ Zn 2+ 、Ge 2+ Fe 2+ Co 2+ Ni 2+ Cd 2+ Cu 2+ Mn 2+ Pd 2+ Yb 2+ Or Eu 2+ One or more of them.

[0126] For example, inorganic trivalent cations include: Bi 3+ Sb 3+ Cr 3+ Fe 3+ Co 3+ Ga 3+ As 3+ Ru 3+ ,Rh 3+ In 3+ Ir 3+ Au 3+ Or Al 3+ One or more of them.

[0127] For example, monovalent anions include: F - Cl - ,Br- I - SCN - CNO - OCN - OSCN - SH - OH - CN - SeCN - One or more of them.

[0128] This application does not impose any particular limitation on the thickness of the perovskite layer 112; any thickness of the perovskite layer 112 conventional in the art can be used. For example, the thickness of the perovskite layer 112 is in the range of 200 nm to 1500 nm, and can be selected in the range of 400 nm to 1000 nm.

[0129] In some specific embodiments, A includes CH3(NH2)2 + CH(NH2)2 + CH3NH2 + Cs + One or more of the following; B includes Pb 2+ Sn 2+ One or more of them; X includes Cl - ,Br - I - One or more of the following; C includes Ag + ;D includes Bi 3+ Sb 3 + In 3+ One or more of them.

[0130] In some embodiments, at least one of the first electrode 111 and the second electrode 113 is a transparent electrode for light incident.

[0131] In some embodiments, the material of the second electrode 113 includes metallic materials, transparent conductive materials, carbon materials, etc. Exemplarily, metallic materials include one or more of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, tungsten, and their alloys. Exemplarily, transparent conductive materials may include one or more of indium tin oxide, lanthanide-doped indium oxide, boron-doped zinc oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, aluminum-doped zinc oxide, gallium zinc oxide, etc.

[0132] This application does not impose any particular limitation on the thickness of the second electrode 113; any thickness conventionally used in the art for the second electrode 113 may be adopted. For example, the thickness of the second electrode 113 is in the range of 10 nm to 1000 nm, and may be selected in the range of 20 nm to 700 nm.

[0133] In some embodiments, the first electrode 111 is made of a metallic material, a transparent conductive material, a carbon material, etc. Exemplarily, the metallic material includes one or more of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, tungsten, and their alloys. Exemplarily, the transparent conductive material includes one or more of indium tin oxide, lanthanide-doped indium oxide, boron-doped zinc oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, aluminum-doped zinc oxide, gallium zinc oxide, etc.

[0134] This application does not impose any particular limitation on the thickness of the first electrode 111; any thickness conventionally used in the art for the first electrode 111 may be adopted. For example, the thickness of the first electrode 111 is in the range of 10 nm to 1000 nm, and may be selected in the range of 20 nm to 700 nm.

[0135] In some embodiments, the first electrode 111 is a transparent electrode used for light incident, and the corresponding electrode is the incident light side electrode.

[0136] In this application, when light can be incident on only one side of a solar cell, that side is referred to as the "light-incident side"; when light can be incident on both sides of a solar cell, that is, when light can be incident on both sides, the side with higher photoelectric conversion efficiency (PCE) of the solar cell when light is incident is defined as the "light-incident side".

[0137] In some embodiments, the perovskite sub-cell 11 further includes a hole-blocking layer (not shown) disposed between the electron transport layer 114 and the corresponding electrode to block hole transport. The hole-blocking layer improves both electron extraction and hole blocking performance.

[0138] This application does not impose any particular limitation on the material of the hole blocking layer. Exemplarily, the material of the hole blocking layer includes, but is not limited to, one or more of copper bath (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, BCP) and SnO2 (1.5≤z≤2). Optionally, an electron blocking layer may also be provided between the first electrode and the first hole transport layer in the solar cell.

[0139] This application does not impose any particular limitation on the thickness of the hole blocking layer; any thickness conventionally used in the art for hole blocking layers may be adopted. For example, the thickness of the hole blocking layer is in the range of 0.1 nm to 100 nm.

[0140] In some embodiments, the perovskite solar cell module 10 further includes a backplate disposed on the side of the second electrode 113 facing away from the perovskite layer 112. The backplate is used to protect and support the perovskite solar module.

[0141] In some embodiments, the perovskite solar cell assembly 10 further includes an adhesive layer and a backsheet, with the adhesive layer disposed between the backsheet and the second electrode 113. The backsheet protects the perovskite sub-cells 11 and serves to seal, insulate, and waterproof; the adhesive layer bonds the backsheet to the perovskite solar cell assembly 10.

[0142] In some embodiments, the backsheet includes a rigid backsheet or a flexible backsheet. In some embodiments, the flexible backsheet may be made of, for example (but not limited to), organic polymer materials, and further, may be a mixture of one or more of the following materials in different proportions: including but not limited to polyvinyl alcohol (PVA), polyester (PET), polyimide (PI), polyethylene naphthalate (PEN), polydimethylsiloxane (PDMS), etc. The rigid backsheet may be made of glass, such as tempered glass, semi-tempered glass, float glass, quartz glass, etc. Furthermore, the perovskite solar cell module 10 described above also includes a junction box and an outer frame.

[0143] The junction box is used to protect the power generation system of the entire perovskite solar cell module 10. It is equivalent to a current transfer station. When a cell short-circuits, the junction box will automatically disconnect the short-circuited cell string.

[0144] The outer frame can support and protect the entire perovskite battery module 10. The frame can be made of aluminum alloy, which has excellent strength and corrosion resistance.

[0145] Furthermore, silicone is used to bond and seal the connections between the frame and other parts of the perovskite solar cell module 10. The perovskite solar cell module 10 can convert solar energy into electrical energy, which can then be stored in a battery or used to power a load.

[0146] In some of these embodiments, the perovskite battery module 10 described above is a solar panel.

[0147] In some embodiments, the edge fracture energy of the perovskite solar cell module is 8 J / m. 2 ~16J / m 2 10J / m 2 ~16J / m 2 .

[0148] One embodiment of this application provides a method for preparing a perovskite solar cell module 10, the method comprising the following steps S100 to S300:

[0149] Step S100: Prepare a perovskite layer 112 on the first electrode 111.

[0150] Step S200: Prepare a second electrode 113 on the side of the perovskite layer 112 opposite to the first electrode 111.

[0151] Step S300: Perform a third laser scribing on the second electrode 113 and the perovskite layer 112 to form a third scribe groove 12, which separates adjacent perovskite sub-cells; wherein, the sidewall of the third scribe groove 12 has a contour shape formed by multiple protrusions 13 arranged along the length direction of the third scribe groove 12; the tilt angle of the protrusions 13 is 10°~50°, optionally 15°~45°, and further optionally 25°~45°; the distance between adjacent protrusions 13 is 100μm~400μm, optionally 100μm~300μm, and further optionally 150μm~250μm; the length direction of the third scribe groove intersects with the arrangement direction of the adjacent perovskite sub-cells.

[0152] By giving the sidewall of the third groove 12 the specific contour shape described above, and by controlling the distance between adjacent protrusions 13 and the tilt angle of the protrusions 13 within the above range, the contour shape enables the continuous distribution of the stress field at the sidewall of the third groove 12, so that the mechanical impedance at the sidewall of the third groove 12 exhibits a continuous change, thereby alleviating the stress concentration phenomenon.

[0153] Under thermal cycling, this contour shape can effectively release the temperature stress and strain at the sidewall of the third scribe line groove 12, reduce the tensile and compressive strain caused by temperature shock, improve the overall lattice stability of the perovskite film, and reduce the impact of laser scribing defects on battery stability. The specific contour shape at the sidewall of the third scribe line groove 12 can improve the situation where the battery module experiences splitting damage at the edge of the scribe line groove under thermal stress or external load, thereby improving the stability of the battery module.

[0154] In some embodiments, after forming the third groove 12, the preparation method further includes the following steps: filling the third groove 12 with an insulating filler, and forming an insulating filling layer 14 in the third groove 12 after annealing; the elastic modulus of the insulating filling layer 14 is greater than or equal to the elastic modulus of the perovskite layer 112. This helps to suppress the lateral outward expansion of the perovskite lattice, alleviate the situation of lattice stretching failure and exceeding the lattice itself, and help to prevent the perovskite lattice edges from being laterally destroyed, thereby improving the stability of the edge interface of the perovskite layer 112. It is understood that the material of the insulating filling layer 14 is as described above, and will not be repeated here.

[0155] In this process, after filling the third groove 12 with insulating filler, an annealing treatment is performed. At the annealing temperature, the mobility of the polymer matrix molecular chain segments is enhanced, which can promote the release of internal stress in the insulating filler. Furthermore, new chemical bonds are formed at the interface between the graphene quantum dots and the polymer matrix, reducing the interfacial energy between them. The lattice of the perovskite layer 112 undergoes local adjustment during annealing, which helps reduce lattice mismatch stress. Annealing promotes the interfacial bonding between the graphene quantum dots and the polymer matrix, facilitates the formation of a more uniform dispersed phase, and improves the matching between the insulating filler layer 14 and the perovskite layer 112.

[0156] In some embodiments, the annealing temperature is 85°C to 100°C; the annealing time is 30 min to 60 min; and the annealing is performed under a protective atmosphere. Annealing at the above temperature and time helps to fully release the internal stress of the insulating filler layer 14, improve the interfacial bonding between the graphene quantum dots and the polymer matrix, and enhance the compatibility between the insulating filler layer 14 and the perovskite layer 112. Furthermore, this temperature is within the normal operating temperature range of the perovskite battery module 10 and will not adversely affect the performance of the battery module. Annealing under a protective atmosphere helps to reduce oxidation of the battery module during the annealing process.

[0157] It is understood that the annealing temperature can be 85℃, 86℃, 87℃, 88℃, 89℃, 90℃, 91℃, 92℃, 93℃, 94℃, 95℃, 96℃, 97℃, 98℃, 99℃, 100℃, or any value within the range formed by any two of the above values. The annealing time can be 30 min, 32 min, 35 min, 38 min, 40 min, 42 min, 45 min, 48 min, 50 min, 52 min, 55 min, 58 min, 60 min, or any value within the range formed by any two of the above values. The protective atmosphere can be nitrogen.

[0158] In some embodiments, the laser used for the third laser scribing is a femtosecond laser. Femtosecond lasers have advantages such as a small heat-affected zone and high processing precision, which is beneficial for fabricating high-precision scribing groove structures.

[0159] Furthermore, the power density of the femtosecond laser is 1×10⁻⁶. 5 W / cm 2 ~1×10 10 W / cm 2The femtosecond laser has a pulse width of 5 fs to 500 fs, a spot overlap rate of 5% to 80%, and a scanning speed of 1000 mm / s to 8000 mm / s. Controlling the power density of the femtosecond laser within these ranges helps avoid excessive ablation of the material; controlling the pulse width within these ranges helps reduce the thermal impact of the laser on the perovskite layer 112; and controlling the spot overlap rate and scanning speed within these ranges helps ensure the continuity of the groove sidewall contour shape, thus further mitigating stress concentration. By adjusting the laser power density, pulse width, spot overlap rate, and scanning speed, parameters such as the morphology of the formed protrusion structure 13, the tilt angle of the protrusion structure 13, and the distance between adjacent protrusion structures 13 can be adjusted, thereby regulating the contour shape of the groove.

[0160] Understandably, the power density of a femtosecond laser can be 1×10⁻⁶. 5 W / cm 2 5×10 5 W / cm 2 1×10 6 W / cm 2 5×10 6 W / cm 2 1×10 7 W / cm 2 5×10 7 W / cm 2 1×10 8 W / cm 2 5×10 8 W / cm 2 1×10 9 W / cm 2 5×10 9 W / cm 2 1×10 10 W / cm 2The pulse width of the femtosecond laser can be 5fs, 50fs, 100fs, 200fs, 250fs, 280fs, 300fs, 350fs, 380fs, 400fs, 450fs, 480fs, 500fs, or any value within the range formed by any two of the above values; the spot overlap rate of the femtosecond laser can be 5%, 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, or any value within the range formed by any two of the above values; the scanning speed of the femtosecond laser can be 1000mm / s, 2000mm / s, 3000mm / s, 4000mm / s, 5000mm / s, 6000mm / s, 7000mm / s, 8000mm / s, or any value within the range formed by any two of the above values.

[0161] In some embodiments, before fabricating the perovskite layer 112 on the first electrode 111, the fabrication method further includes the following steps: performing a first laser scribing on the first electrode 111 to form a first scribe groove 15; the sidewall of the first scribe groove 15 has a contour shape formed by a plurality of protrusions 13 arranged along the length direction of the first scribe groove 15. Thus, after fabricating the perovskite layer 112 on the first electrode 111, the perovskite material fills the first scribe groove 15.

[0162] In some embodiments, after the perovskite layer 112 is formed on the first electrode 111 and before the second electrode 113 is formed on the surface of the perovskite layer 112 facing away from the first electrode 111, the fabrication method further includes the following steps: performing a second laser scribing on the perovskite layer 112 to form a second scribe groove 16; the sidewall of the second scribe groove 16 has a contour shape formed by a plurality of protrusions 13 arranged along the length direction of the second scribe groove 16. Thus, after the second electrode 113 is formed on the surface of the perovskite layer 112 facing away from the first electrode 111, the material of the back electrode fills the second scribe groove 16, forming a conductive structure.

[0163] Understandably, because the functional layer materials etched by the first, second, and third laser scribing lines are different, the laser processing parameters are different when forming a scribing groove with a contour shape formed by multiple protruding structures 13 arranged along the length direction of the second scribing groove 16.

[0164] In some specific examples, the laser power density of the first laser scribing can be 1×10⁻⁶. 9 W / cm 2 ~1×10 10 W / cm 2The pulse width can be 10 fs to 500 fs, the spot overlap rate can be 60% to 80%, and the scanning speed can be 1000 mm / s to 3000 mm / s. The laser power density of the second laser scribing can be 1 × 10⁻⁶. 7 W / cm 2 ~1×10 8 W / cm 2 The pulse width can be 10 fs to 300 fs, the spot overlap rate can be 30% to 50%, and the scanning speed can be 3000 mm / s to 5000 mm / s. The laser power density for the third laser scribing can be 1×10⁻⁶. 5 W / cm 2 ~1×10 6 W / cm 2 The pulse width can be 5fs~200fs, the spot overlap rate can be 5%~10%, and the scanning speed can be 5000mm / s~8000mm / s.

[0165] One embodiment of this application provides a photovoltaic system including the perovskite cell module 10 described above, or a perovskite cell module 10 prepared by the preparation method described above.

[0166] The photovoltaic system utilizes the perovskite sub-cells 11 in the perovskite cell module 10 to directly convert solar radiation energy into electrical energy, which is highly efficient and stable; furthermore, the photovoltaic system is a photovoltaic power generation system.

[0167] Perovskite solar cell modules are the core component of a photovoltaic power generation system. The photovoltaic system mentioned above includes one or more perovskite solar cell modules 10, which can be selected according to specific application scenarios. Furthermore, when the photovoltaic system includes multiple perovskite solar cell modules 10, the multiple perovskite solar cell modules 10 form a photovoltaic array.

[0168] The aforementioned photovoltaic system can be a stand-alone photovoltaic power generation system or a grid-connected photovoltaic power generation system.

[0169] An independent photovoltaic (PV) power generation system includes a PV array, battery bank, charge controller, power electronic converter (inverter), and load. Its working principle is that solar radiation energy is first converted into electrical energy by the PV array, then converted by the power electronic converter to supply power to the load. Simultaneously, excess electrical energy is stored as chemical energy in an energy storage device after passing through the charge controller. Thus, when sunlight is insufficient, the energy stored in the battery can be converted into 220V AC, 50Hz electrical energy through the power electronic inverter, filter, and power frequency transformer to supply AC loads.

[0170] A grid-connected photovoltaic (PV) power generation system includes a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter), and system monitoring. Its working principle is that solar radiation energy is converted by the photovoltaic array, then converted into high-voltage DC by a high-frequency DC converter, and finally inverted by the power electronic inverter to output a sinusoidal alternating current to the grid that is in phase with the grid voltage.

[0171] The two photovoltaic power generation systems mentioned above each have their own characteristics and can be selected according to the specific application scenario.

[0172] One embodiment of this application provides a power generation device, including the perovskite battery module 10 described above, or a perovskite battery module 10 prepared by the preparation method described above.

[0173] One embodiment of this application provides an electrical device, including the perovskite battery module 10 described above, or a perovskite battery module 10 prepared by the preparation method described above.

[0174] In some embodiments, the power-consuming device is a common device including the perovskite battery module 10 of this application, such as those in the fields of communications, transportation, industry and agriculture, and lighting. Specifically, the power-consuming device may include, for example, satellites, communication equipment, traffic lights, lighthouses, wireless telephone booths, monitoring equipment in the field of oil drilling, power systems, camping lights, electric vehicles, electronic device chargers, building curtain walls, etc.

[0175] The following describes embodiments of this application. The embodiments described below are exemplary and are only used to explain this application, and should not be construed as limiting this application. Where specific techniques or conditions are not specified in the embodiments, they are performed according to the techniques or conditions described in the literature in this field or according to the product instructions. Reagents or instruments used, unless otherwise specified, are all conventional products that can be obtained commercially.

[0176] Example 1:

[0177] (1) Preparation of the first electrode

[0178] The first electrode is disposed on a glass substrate. The material of the first electrode is indium tin oxide (ITO) with a thickness of 100 nm. The glass substrate with the first electrode is cleaned sequentially with acetone, alcohol and deionized water, and then dried for later use.

[0179] (2) First laser scribing

[0180] A femtosecond laser is used to scribing the first electrode, forming a first groove. The sidewall of the first groove has a contour shape formed by multiple arc-shaped protrusions arranged along the length of the groove. The power density of the femtosecond laser is 1×10⁻⁶.9 ~1×10 10 W / cm 2 The pulse width of a femtosecond laser is 10~500 fs, the spot overlap rate of a femtosecond laser is 60%~80%, and the scanning speed of a femtosecond laser is 1000~3000 mm / s.

[0181] The inclination angle of the arc-shaped protrusion on the side wall of the first scribe groove is 30°, the distance between adjacent arc-shaped protrusions is 200μm, and the height of the arc-shaped protrusion is 100μm.

[0182] (3) Fabrication of electron transport layer

[0183] A 20 nm layer of SnO2 is prepared on the first electrode using an atomic layer deposition (ALD) apparatus to form an electron transport layer. Simultaneously, the SnO2 fills the first etched groove.

[0184] (4) Preparation of perovskite layer

[0185] 3 mg of FAI, 59 mg of FABr, 46 mg of CsI, 25 mg of CsBr, 428 mg of PbI2 and 209 mg of PbBr2 were added to 1 mL of a mixture of DMF and DMSO (DMF to DMSO volume ratio of 3:1). The mixture was stirred at 600 rpm for 8 h on a magnetic stirrer and then filtered to obtain a perovskite precursor solution. 100 μL of the above perovskite precursor solution was spin-coated onto the electron transport layer (first at a spin speed of 2000 rpm and an acceleration of 200 rpm / s for 10 s, then at a spin speed of 4000 rpm and an acceleration of 1000 rpm / s for 25 s). Then, 200 μL of chlorobenzene was added dropwise onto the spin-coated perovskite precursor solution, followed by another spin-coating of the perovskite precursor solution (at a spin speed of 4000 rpm for 15 s). The mixture was then transferred to a hot plate and annealed at 100 °C for 15 min to form a perovskite layer with a thickness of 600 nm.

[0186] (5) Preparation of hole transport layer

[0187] [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphoric acid (MeO-4PACz) was added to an ethanol solvent and stirred. The ethanol solution of MeO-4PACz was then spin-coated onto a perovskite layer (spin-coating speed 4000 rpm, spin-coating time 30 s), and then transferred to a hot plate and annealed at 100 °C for 10 min to form a hole transport layer with a thickness of 1 nm.

[0188] (6) Second laser scribing

[0189] A femtosecond laser is used to perform a second laser scribing on the hole transport layer, perovskite layer, and electron transport layer, forming a second scribed groove. The sidewall of this second scribed groove has a contour shape formed by multiple arc-shaped protrusions arranged along the length of the groove. The power density of the femtosecond laser is 1×10⁻⁶. 7 ~1×10 8 W / cm 2 The pulse width of a femtosecond laser is 10~300 fs, the spot overlap rate of a femtosecond laser is 30%~50%, and the scanning speed of a femtosecond laser is 3000~5000 mm / s.

[0190] The inclination angle of the arc-shaped protrusion on the side wall of the second scribe groove is 30°, the distance between adjacent arc-shaped protrusions is 200μm, and the height of the arc-shaped protrusion is 100μm.

[0191] (7) Preparation of the second electrode

[0192] A 100nm layer of metallic copper (Cu) is deposited on the aforementioned hole transport layer to form the second electrode. Simultaneously, the metallic copper fills the second etched groove.

[0193] (8) Third laser scribing

[0194] A femtosecond laser is used to perform a third laser scribing on the second electrode, hole transport layer, perovskite layer, and electron transport layer, forming a third scribed groove. The sidewall of this third scribed groove has a contour shape formed by multiple arc-shaped protrusions arranged along the length of the groove. The power density of the femtosecond laser is 1×10⁻⁶. 5 ~1×10 6 W / cm 2 The pulse width of a femtosecond laser is 5~200 fs, the spot overlap rate of a femtosecond laser is 5%~10%, and the scanning speed of a femtosecond laser is 5000~8000 mm / s.

[0195] The inclination angle of the arc-shaped protrusion on the side wall of the third groove is 30°, the distance between adjacent arc-shaped protrusions is 200μm, and the height of the arc-shaped protrusion is 100μm.

[0196] (9) Preparation of insulating filler layer

[0197] A composite slurry containing graphene quantum dots and PMMA was filled into the third groove and cured at 100°C for 20 min to form an insulating filling layer. The perovskite solar cell module prepared above was then annealed at 100°C for 30 min. The insulating filling layer contained 10% graphene quantum dots by mass, 90% PMMA by mass, and had an average particle size of 30 nm for the graphene quantum dots.

[0198] Example 2:

[0199] This embodiment is basically the same as embodiment 1, except that in step (8), the process conditions of femtosecond laser scribing are adjusted so that the inclination angle of the arc-shaped protrusion structure on the side wall of the third scribing groove is 15°.

[0200] Example 3:

[0201] This embodiment is basically the same as embodiment 1, except that in step (8), the process conditions of femtosecond laser scribing are adjusted so that the inclination angle of the arc-shaped protrusion structure on the side wall of the third scribing groove is 45°.

[0202] Example 4:

[0203] This embodiment is basically the same as embodiment 1, except that in step (8), the process conditions of femtosecond laser scribing are adjusted so that the distance between adjacent arc-shaped protrusions on the side wall of the third scribing groove is 100μm.

[0204] Example 5:

[0205] This embodiment is basically the same as embodiment 1, except that in step (8), the process conditions of femtosecond laser scribing are adjusted so that the distance between adjacent arc-shaped protrusions on the side wall of the third scribing groove is 300μm.

[0206] Example 6:

[0207] This embodiment is basically the same as embodiment 1, except that in step (8), the process conditions of femtosecond laser scribing are adjusted so that the height of the arc-shaped protrusion structure on the side wall of the third scribing groove is 50μm.

[0208] Example 7:

[0209] This embodiment is basically the same as embodiment 1, except that: in step (8), the process conditions of femtosecond laser scribing are adjusted so that the protrusion structure on the side wall of the third scribing groove is a trapezoidal protrusion; the inclination angle of the trapezoidal protrusion is 30°, the distance between adjacent trapezoidal protrusions is 200μm, the height of the trapezoidal protrusion is 100μm, and the length of the upper base of the trapezoidal protrusion is 100μm.

[0210] Example 8:

[0211] This embodiment is basically the same as embodiment 1, except that: in steps (2) and (6), a picosecond laser is used to scribing lines to form a straight first scribing groove and a second scribing groove.

[0212] Example 9:

[0213] This embodiment is basically the same as embodiment 8, except that step (9) of preparing the insulating filler layer is not performed.

[0214] Example 10:

[0215] This embodiment is basically the same as embodiment 9, except that in step (8), the process parameters of the femtosecond laser scribing are adjusted so that the inclination angle of the arc-shaped protrusion structure on the side wall of the third scribing groove is 10°.

[0216] Example 11:

[0217] This embodiment is basically the same as embodiment 9, except that in step (8), the process parameters of the femtosecond laser scribing are adjusted so that the distance between adjacent arc-shaped protrusions on the side wall of the third scribing groove is 50μm.

[0218] Example 12:

[0219] This embodiment is basically the same as embodiment 9, except that in step (8), the process parameters of the femtosecond laser scribing are adjusted so that the distance between adjacent arc-shaped protrusions on the side wall of the third scribing groove is 400μm.

[0220] Comparative Example 1:

[0221] This comparative example is basically the same as Example 9, except that in step (8), a picosecond laser is used to scribing lines to form a straight third scribing groove.

[0222] Finite element method (FEM) simulations were performed on the perovskite sub-cells in the battery modules of Comparative Example 1 and Example 1 to examine the interface stress concentration at the edge of the third scribe line groove of the perovskite sub-cell. The simulation results for the perovskite sub-cell of Comparative Example 1 are as follows: Figure 6 As shown; the simulation results of the perovskite sub-cell in Example 1 are as follows. Figure 7 As shown in the figure. By comparison, it can be seen that the average edge stress of the perovskite sub-cell in Example 1 is significantly reduced, and the edge of the perovskite sub-cell is less prone to splitting damage.

[0223] Performance testing:

[0224] (1) Battery module edge fracture energy test

[0225] The single-sided notched beam method (SENB) was used for testing: a notched beam specimen with laser-etched lines was prepared, and a three-point bending load was applied to allow the crack to propagate along the etched edge. The fracture energy was calculated using load-displacement curves. The specific steps are as follows:

[0226] 1. Sample preparation: Cut the battery cells into beams of 20mm×5mm×0.5mm, ensuring that the laser scribing is a unique notch (depth a controlled between 1mm and 2mm).

[0227] 2. Testing environment: Dry glove box (humidity <1%) to avoid perovskite degradation;

[0228] 3. Loading parameters: Loading rate 0.01mm / min~0.1mm / min, record the maximum load Pmax and displacement δmax;

[0229] The formula for calculating fracture energy is: Where Gc is the fracture energy, in J / m³. 2 U is the total area enclosed by the load-displacement curve from the start of loading to the complete fracture of the specimen, in J; B is the thickness of the specimen, in m; W is the width of the test, in m; a is the length of the pre-made notch or crack, in m; Wa represents the effective ligament length of the specimen. .

[0230] (2) Battery component stability test

[0231] Perform damp heat aging tests (double 85 test) according to the method in IEC61215-2-2021.

[0232] Test conditions: 85℃ / 85% RH. This test measures the time required for the efficiency of the battery module to decrease by 10% compared to its initial efficiency after aging.

[0233] The battery modules of the above embodiments and comparative examples were subjected to performance tests, and the parameters and performance test results of the battery modules are shown in Table 1.

[0234] Table 1

[0235]

[0236] As shown in Table 1, in each embodiment of this application, the sidewall of the third scribe groove has a specific contour shape; and the distance between adjacent protrusions and the tilt angle of the protrusions are controlled within a specific range in this application; the edge fracture energy of the battery assembly is high, and it has good stability.

[0237] Comparing Examples 1-3, it can be seen that the tilt angle of the third scribed groove protrusion structure in Examples 1 and 3 is within the preferred range, resulting in higher edge fracture energy and better stability of the battery module. Comparing Examples 1, 4-5, it can be seen that the protrusion distance of the third scribed groove protrusion structure in Examples 1 and 5 is within the preferred range, resulting in higher edge fracture energy and better stability of the battery module.

[0238] Comparing Examples 8 and 9, it can be seen that in Example 8, an insulating filler layer is used to fill the third groove, resulting in higher edge fracture energy and better stability of the battery module. Comparing Examples 9 and 10-11, it can be seen that in Example 9, the tilt angle of the raised structure of the third groove is within a preferred range, resulting in higher edge fracture energy and better stability of the battery module. Comparing Examples 9 and 12, it can be seen that in Example 9, the protrusion distance of the raised structure of the third groove is within a preferred range, resulting in higher edge fracture energy and better stability of the battery module. In Comparative Example 1, the groove of the battery module is a traditional straight groove, which significantly reduces the edge fracture energy and stability of the battery module.

[0239] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0240] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims, and the specification and drawings can be used to interpret the content of the claims.

Claims

1. A perovskite solar cell assembly, comprising a plurality of perovskite sub-cells, wherein adjacent perovskite sub-cells are spaced apart by a third scribed groove; the sidewall of the third scribed groove has a profile shape formed by a plurality of protrusions arranged along the length direction of the third scribed groove; the inclination angle of the protrusions is 10° to 50°, and the distance between two adjacent protrusions is 100 μm to 400 μm; the length direction of the third scribed groove intersects with the arrangement direction of the adjacent perovskite sub-cells.

2. The perovskite solar cell module according to claim 1, wherein, Meet one or more of the following: (1) The tilt angle of the protrusion structure is 15°~45°, and can be selected as 25°~45°; (2) The distance between two adjacent protrusions is 100μm~300μm, and can be selected as 150μm~250μm; (3) The size of the protrusion structure in the width direction of the third scribe groove is 50μm~200μm.

3. The perovskite solar cell module according to any one of claims 1 to 2, wherein, The protrusion structure includes one or more of the following: arc-shaped protrusion, trapezoidal protrusion, and triangular protrusion.

4. The perovskite solar cell module according to any one of claims 1 to 3, wherein, The raised structure is provided along the entire length of the height direction of the third scribed groove.

5. The perovskite solar cell module according to any one of claims 1 to 4, wherein, It also includes an insulating filler layer. The perovskite sub-cell includes a perovskite layer. The insulating filler layer fills the third scribed groove, and the elastic modulus of the insulating filler layer is greater than or equal to the elastic modulus of the perovskite layer.

6. The perovskite solar cell module according to claim 5, wherein, The elastic modulus of the insulating filler layer is 1 to 1.5 times that of the perovskite layer.

7. The perovskite solar cell module according to any one of claims 1 to 6, wherein, It also includes an insulating filling layer. The perovskite sub-cell includes a perovskite layer, and the insulating filling layer is filled in the third scribed groove. The thermal expansion coefficient of the insulating filling layer is less than or equal to the thermal expansion coefficient of the perovskite layer.

8. The perovskite solar cell module according to claim 7, wherein, The coefficient of thermal expansion of the insulating filling layer is 0.8 to 1 times that of the perovskite layer.

9. The perovskite solar cell module according to any one of claims 5 to 8, wherein, The insulating filler layer comprises graphene quantum dots and a polymer matrix; based on the total mass of the insulating filler layer, the mass fraction of the graphene quantum dots is 5% to 15%.

10. The perovskite solar cell module according to claim 9, wherein, Based on the total mass of the insulating filler layer, the mass fraction of the graphene quantum dots is 5% to 10%.

11. The perovskite solar cell module according to any one of claims 9 to 10, wherein, The polymer matrix includes one or more of polymethyl methacrylate, epoxy resin, polyimide, polyvinylidene fluoride, silicone rubber, polycarbonate, and polystyrene.

12. The perovskite solar cell module according to any one of claims 9 to 11, wherein, The average particle size of the graphene quantum dots is 10 nm to 100 nm.

13. The perovskite solar cell module according to any one of claims 1 to 12, wherein, The perovskite sub-cell includes a first electrode, a perovskite layer, and a second electrode stacked sequentially. The first electrode has a first groove, and the sidewall of the first groove has a contour shape formed by a plurality of protrusions arranged along the length of the first groove.

14. The perovskite solar cell module according to claim 13, wherein, The perovskite layer has a second scribed groove, and the sidewall of the second scribed groove has a contour shape formed by a plurality of the protrusions arranged along the length direction of the second scribed groove.

15. The perovskite solar cell module according to any one of claims 1 to 14, wherein, The edge fracture energy of the perovskite solar cell module is 8 J / m. 2 ~16J / m 2 10J / m 2 ~16J / m 2 .

16. A method for preparing a perovskite solar cell module, comprising the following steps: A perovskite layer is prepared on the first electrode; A second electrode is prepared on the surface of the perovskite layer opposite to the first electrode; A third laser scribing is performed on the second electrode and the perovskite layer to form a third scribe groove. The sidewall of the third scribed groove has a contour shape formed by multiple protruding structures arranged along the length of the third scribed groove; the inclination angle of the protruding structure is 10°~50°, optionally 15°~45°, and further optionally 25°~45°; the distance between two adjacent protruding structures is 100μm~400μm, optionally 100μm~300μm.

17. The method for preparing a perovskite solar cell module according to claim 16, wherein, After forming the third scribe groove, the preparation method further includes the following steps: An insulating filler is filled into the third groove, and after annealing, an insulating filling layer is formed in the third groove; the coefficient of thermal expansion of the insulating filling layer is less than or equal to the coefficient of thermal expansion of the perovskite layer.

18. The method for preparing a perovskite solar cell module according to claim 16 or 17, wherein, After forming the third scribe groove, the preparation method further includes the following steps: An insulating filler is filled into the third groove, and after annealing, an insulating filling layer is formed in the third groove; the elastic modulus of the insulating filling layer is greater than or equal to the elastic modulus of the perovskite layer.

19. The method for preparing a perovskite solar cell module according to claim 17 or 18, wherein, The annealing temperature is 85℃~100℃.

20. The method for preparing a perovskite solar cell module according to any one of claims 17-19, wherein, The annealing process takes 30 to 60 minutes.

21. The method for preparing a perovskite solar cell module according to any one of claims 17 to 20, wherein, The annealing process is performed under a protective atmosphere.

22. The method for preparing a perovskite solar cell module according to any one of claims 16 to 21, wherein, The laser used for the third laser marking is a femtosecond laser; the power density of the femtosecond laser is 1×10⁻⁶. 5 W / cm 2 ~1×10 10 W / cm 2 The pulse width is 5fs~500fs, the spot overlap rate is 5%~80%, and the scanning speed is 1000mm / s~8000mm / s.

23. The method for preparing a perovskite solar cell module according to any one of claims 16 to 22, wherein, Before preparing the perovskite layer on the first electrode, the preparation method further includes the following steps: The first electrode is laser-scribed to form a first groove; the sidewall of the first groove has a contour shape formed by a plurality of protrusions arranged along the length of the first groove.

24. The method for preparing a perovskite solar cell module according to claim 23, wherein, After the perovskite layer is prepared on the first electrode, and before the second electrode is prepared on the surface of the perovskite layer facing away from the first electrode, the preparation method further includes the following steps: The perovskite layer is laser-scribed to form a second groove; the sidewall of the second groove has a contour shape formed by a plurality of protrusions arranged along the length of the second groove.

25. A photovoltaic system comprising a perovskite solar cell module according to any one of claims 1 to 15, or a perovskite solar cell module prepared by the method of preparing a perovskite solar cell module according to any one of claims 16 to 24.

26. A power generation device comprising a perovskite solar cell module according to any one of claims 1 to 15, or a perovskite solar cell module prepared by the method of preparing a perovskite solar cell module according to any one of claims 16 to 24.

27. An electrical device comprising a perovskite solar cell module according to any one of claims 1 to 15, or a perovskite solar cell module prepared by the method of preparing a perovskite solar cell module according to any one of claims 16 to 24.

Images