Apparatus and method for removing gaseous byproducts of die bonding

Abstract

A carrier for one or more semiconductor dies, the carrier comprising: a carrier substrate comprising one or more openings; and a flexible membrane configured to temporarily support one or more semiconductor dies and to inflate to create one or more air bubbles, wherein the one or more openings are arranged to release pressure of the one or more air bubbles.

Description

Cross-references to related applications

[0001] This application claims priority to European application 24163223.1, filed on 13 March 2024, which is incorporated herein by reference in its entirety. Technical Field

[0002] This disclosure generally relates to apparatus and methods for removing byproducts from die bonding. Background Technology

[0003] In the manufacturing process of integrated circuits (ICs), multiple finished or unfinished ICs (e.g., complete wafers, diced wafers, partially diced wafers, chips, dies, etc.) can be placed, stacked, bonded, or otherwise connected at various points during the fabrication process (e.g., to heterogeneous or homogeneous devices). Heterogeneous integration (e.g., the integration of different circuits or other patterned devices) can rely on the connection of specific portions of multiple dies (e.g., conductive contact elements), where these specific portions can be aligned in three-dimensional space to ensure functional connectivity. The alignment of these dies (which may have multiple fabrication layers, different critical dimensions, different nodes, packages, etc.) with each other may require techniques different from those used for photolithography during fabrication. As the physical size of IC components continues to shrink and their structures become increasingly complex, integration accuracy and throughput become more critical. For applications such as heterogeneous integration, accurate and rapid placement of dies relative to each other may be desirable. In the context of semiconductor manufacturing, improvements in die placement and alignment (e.g., improvements in heterogeneous integration) lead to improvements in IC manufacturing and integration capabilities.

[0004] Wad bonding (e.g., using radiation-mediated release) may release byproducts (including gaseous byproducts), which may pose a risk of contamination to the dies and / or further fabrication. Summary of the Invention

[0005] According to one embodiment, a carrier for one or more semiconductor dies is presented, the carrier comprising: a carrier substrate including one or more openings; and a flexible diaphragm configured to temporarily support the one or more semiconductor dies and expand to generate one or more bubbles, wherein the one or more openings are arranged to release pressure from the one or more bubbles.

[0006] According to one embodiment, a system for die manipulation is presented, the system comprising: a structure configured to hold a semiconductor die; a radiation output configured to provide radiation toward the die; a processor system configured to provide sufficient radiation toward or near the die to transfer the die toward a receptor location by gas expansion, such that the transferred die engages with the receptor location; and a gas extraction module configured to extract the product of the gas expansion.

[0007] According to one embodiment, a method is presented comprising: applying radiation to or near a semiconductor die to cause the die to move toward a receiver location, wherein applying the radiation causes one or more gaseous byproducts to be released; and removing the gaseous byproducts from a region near the die using a gas extraction system.

[0008] According to one embodiment, one or more non-transitory machine-readable media are provided, having instructions on the non-transitory machine-readable media that are configured, when run by a processor, to perform the methods as described herein. Attached Figure Description

[0009] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate one or more embodiments and explain these embodiments together with the specification. Embodiments of the invention will now be described by way of example only with reference to the accompanying schematic drawings, wherein corresponding reference numerals denote corresponding parts, and in the drawings:

[0010] Figures 1A to 1D This is a schematic diagram illustrating an exemplary die bonding method according to one or more embodiments.

[0011] Figures 2A to 2F This is a schematic diagram illustrating an exemplary method of die placement according to one or more embodiments.

[0012] Figures 3A to 3J This is a schematic diagram illustrating portions of an exemplary device for die bonding according to one or more embodiments.

[0013] Figures 4A to 4C This is a schematic diagram illustrating an exemplary method for die bonding using the extraction of gaseous byproducts, according to one or more embodiments.

[0014] Figure 5 This is a schematic diagram illustrating an exemplary apparatus for die bonding using extraction of gaseous byproducts and a mask, according to one or more embodiments.

[0015] Figures 6A to 6DThis is a schematic diagram illustrating an exemplary method for die bonding utilizing bubble generation and extraction of gaseous byproducts according to one or more embodiments.

[0016] Figure 7 This is a schematic diagram illustrating an exemplary opening for gas extraction according to one or more embodiments.

[0017] Figure 8 This is a flowchart illustrating an exemplary method of die placement according to one or more embodiments.

[0018] Figure 9 This is a flowchart illustrating an exemplary method for radiation-mediated die release using the extraction of gaseous byproducts according to one or more embodiments.

[0019] Figure 10 This is a block diagram of an exemplary computer system according to one or more embodiments of the present disclosure. Detailed Implementation

[0020] Embodiments of this disclosure are described in detail with reference to the accompanying drawings, which are provided as illustrative examples to enable those skilled in the art to practice this disclosure. It is important to note that the following drawings and examples are not intended to limit the scope of this disclosure to a single embodiment, but rather other embodiments are possible by interchangeing some or all of the elements described or illustrated. Furthermore, where certain elements of this disclosure may be implemented partially or entirely using known components, only portions of these known components necessary for understanding this disclosure will be described, and detailed descriptions of other portions of these known components will be omitted so as not to obscure the disclosure. Embodiments described as software implementations are not intended to be limited thereto, but may include hardware implementations, or implementations of a combination of software and hardware, and vice versa, as will be apparent to those skilled in the art, unless otherwise specified herein. Embodiments illustrating single components in this specification should not be considered limiting; rather, this disclosure is intended to cover other embodiments including multiple identical components, and vice versa, unless expressly stated herein. Furthermore, the applicant does not intend to assign any terminology in the specification or claims an unusual or particular meaning unless expressly stated so. Furthermore, this disclosure covers current and future known equivalents of known components referenced herein by way of illustration.

[0021] While references to IC manufacturing may be made specifically herein, it should be clearly understood that the description herein has many other possible applications. For example, other possible applications include the manufacture of integrated optical systems, guide and detection patterns for magnetic domain memory, liquid crystal displays, thin-film magnetic heads, etc. Those skilled in the art will understand that, in the context of such alternative applications, any use of the terms "wafer" or "die" herein should be considered interchangeable with the more general terms "substrate" and "target portion," respectively. The term "wafer" can generally be used to refer to a large manufacturing unit (which may be the largest manufacturing unit), while the term "die" can be used to refer to a smaller manufacturing unit, which may correspond to a lithographic pattern, a portion of a lithographic pattern, multiple lithographic patterns, etc. A "die" can correspond to a portion of a "wafer," meaning that a "die" can be produced by dicing or otherwise dividing a "wafer." The term "die" should be considered interchangeable with the terms chip, chiplet, or other terms used for IC dicing. Patterning apparatus (e.g., lithography apparatus) may include or can form one or more patterns that may correspond to one or more dies. Patterns can be generated based on a pattern or design layout using CAD (Computer-Aided Design) programs; this process is commonly referred to as EDA (Electronic Design Automation). As used throughout this application, unless otherwise stated, “or” has a non-exclusive meaning, encompassing both “and” and “or”. “Each,” “every,” “all,” “corresponding,” “various,” and other relational terms encompass substantially “each,” “every,” “all,” etc., including situations where each, every, all, corresponding, various, etc., may include a non-one-to-one relationship or exclude every possible item. For example, “each” may exclude items such as those determined to be defective during testing. “Each” may exclude unused items, such as marginal items. “All” may exclude items such as redundant items. “Corresponding” does not require items to correspond in an exact one-to-one manner. For example, a first item may correspond to two second items, or vice versa. In some cases, “various” may refer to multiple items, such as each item A having various items B, where item A may have two items B.

[0022] Now for reference Figures 1A to 1DThis is a schematic diagram illustrating an exemplary die bonding method consistent with embodiments of the present disclosure. The exemplary die bonding method is depicted relative to a set of reference axes, which remains consistent throughout the schematic diagram. The reference axes are provided for ease of description only and should not be considered limiting. Alternatively, the included methods and apparatus may be described with reference to different axes (e.g., cylindrical coordinates, polar coordinates, etc.), different origins (e.g., the origin in the donor die, the origin in the target, the origin between the donor die and the target, etc.), or different orientations. The reference axes are selected such that the fabrication plane of the die (i.e., the substrate surface) lies in the xy plane, and wherein, for both the donor die and the target location, the fabrication direction is parallel or antiparallel to the z-axis.

[0023] like Figures 1A to 1D As shown, an exemplary die bonding method may involve a donor die 102 and a target die 104. In this document, the terms "donor" and "target" are used for ease of description. It should be understood that the terms "donor" and "target" are provided for reference and are relative descriptions, and an element described as corresponding to a "donor" may alternatively correspond to a "target," and vice versa. The target die may also, or alternatively, be referred to as a recipient die. Furthermore, although in Figure 1A Only one donor die and one target die are depicted, but it should be understood that multiple such dies may exist, and multiple donor dies may be substantially coupled to multiple target dies simultaneously, for example, where multiple dies are still part of the substrate in which or on which they are formed (in whole or in part).

[0024] The donor die 102 may have one or more electrically active regions 106, such as one or more electrically active regions 106 on an alignment surface of the donor die 102. The one or more electrically active regions 106 may be conductive, such as being metallic. The one or more electrically active regions 106 may correspond to one or more vias (e.g., one or more through-silicon vias (TSVs)), one or more electrical contact lines, one or more contact pads, one or more package pads, or other one or more conductive regions. The donor die 102 may have one or more electrically inert regions (e.g., electrically insulating regions) outside the one or more electrically active regions 106 (e.g., on the alignment surface of the donor die 102). The one or more electrically active regions 106 may be recessed relative to one or more other surfaces of the donor die 102 (as shown). The one or more electrically active regions 106 may correspond to one or more contacts (e.g., source, drain, gate, etc.) that contact one or more electrical devices (not shown) within the donor die 102. The target die 104 may also have one or more electroactive regions 108, which may have one or more properties similar to those of one or more electroactive regions 106.

[0025] The donor die 102 may also, or alternatively, have one or more doped regions 110, such as on the alignment surface of the donor die 102, recessed below the alignment surface of the donor die 102, etc. Although the term "doped" is used, it should be understood that the one or more doped regions 110 can be any region having one or more electrical properties different from the bulk of the substrate (e.g., a silicon wafer) throughout the fabrication process. The one or more doped regions 110 may correspond to the source, drain, gate, ground, or other regions of the circuit that are doped or otherwise modified (e.g., by implantation, oxide growth, thin film deposition, etc.) to have electrical properties different from the bulk of the substrate. The one or more doped regions 110 may include one or more conductive layers (e.g., one or more highly doped or conductive layers) and / or one or more insulating layers (e.g., one or more oxide layers). The donor die 102 may have one or more undoped regions (e.g., regions where the substrate retains the properties of the bulk substrate) outside the one or more doped regions 110 (e.g., on the alignment surface of the donor die 102). One or more doped regions 110 may be recessed, buried, coplanar (as shown), etc., relative to one or more other surfaces of the donor die 102. The one or more doped regions 110 may correspond to one or more regions of one or more electrical devices within the donor die 102 (e.g., corresponding to one or more source regions, one or more drain regions, one or more gate regions, one or more dielectric regions, etc.), or to one or more regions that can form across one or more electrical devices once the donor die 102 and the recipient die 104 are bonded together. Similarly, the target die 104 may have one or more doped regions 112, which may have one or more properties similar to the one or more doped regions 110.

[0026] like Figure 1A and Figure 1BAs shown, an exemplary die bonding method may involve aligning at least one of the electroactive regions 106 and / or doped regions 110 of a donor die 102 with at least one of the electroactive regions 108 and / or doped regions 112 of a target die 104. An exemplary die bonding method may involve contacting the donor die 102 with the target die 104 while maintaining, for example, alignment between one or more electroactive regions 106 and one or more electroactive regions 108, such that one or more electroactive regions 106 and one or more electroactive regions 108 can be connected for electrical communication across the die. An exemplary die bonding method may involve aligning one or more doped regions 110 of the donor die 102 with one or more doped regions 112 of the target die 104. Alignment may encompass contact, aligning one or more edges of the respective regions, having overlap, having non-overlap, or any other suitable alignment scheme. An exemplary die bonding method may involve applying or maintaining pressure between a donor die 102 and a target die 104 while bonding occurs between the two. The donor die 102 may be supported by a carrier structure 114, which may be a substrate that is at least partially transparent to a range of radiation (e.g., infrared radiation, a portion of the spectrum, etc.). The target die 104 may similarly be supported by a carrier structure 116, which may be transparent to a range of radiation or may not be transparent to a range of radiation. Alignment may be complicated by multiple layers of the donor die 102 or multiple layers of the target die 104 (which may be optically opaque).

[0027] Figure 1A and Figure 1B A cross-sectional view is depicted showing a portion of an exemplary die-bonding method illustrating the relative positioning between a donor die 102 and a target die 104. (See attached image.) Figure 1A As shown, the donor die 102 and the target die 104 can be placed together along the z-axis, and the position of either the donor die 102 or the target die 104 can be adjusted in the xy-plane (e.g., perpendicular to the z-axis of the approach) to improve the alignment between the donor die 102 and the target die 104. Figure 1B As shown, alignment can be achieved, for example, between one or more electroactive regions 106 and one or more electroactive regions 108, and / or between one or more doped regions 110 of the donor die 102 and one or more doped regions 112 of the target die 104.

[0028] Once aligned, the donor die 102 and the target die 104 are bonded together. Bonding may include placing the donor die 102 onto the target die 104 (or vice versa), including via radiation-mediated transfer. In one embodiment, the bonding is a direct or fusion bonding (e.g., involving van der Waals forces). In one embodiment, the bonding is an indirect molecular bonding, such as van der Waals bonding. In one embodiment, the bonding may include covalent bonding, ionic bonding, or metallization (e.g., chemical) bonding (e.g., hydrogen bonding). In one embodiment, bonding is aided by material (e.g., in gaseous or liquid form) applied to the alignment surfaces of the donor die 102 and / or the target die 104 or provided to the gap between the donor die 102 and the target die 104 (e.g., a suitable bonding or adhesive material). In some embodiments, physical contact between the donor die 102 and the target die 104 may include bonding, such as bonding wavefronts generated by contact (or atomic-level proximity) of surfaces prepared for hydrogen bonding.

[0029] like Figure 1B As shown, donor die 102 and target die 104 can be annealed after contact, as indicated by the wavy line (although wavy lines are shown for both donor die 102 and target die 104 herein, it is not necessary to provide annealing agent for both donor die 102 and target die 104, nor is it necessary to apply annealing agent in both of the shown directions(s). Annealing can be or includes thermal annealing, electrical annealing, electrostatic processes, etc. In some embodiments, annealing can include annealing of the joined in-plane (or protruding) regions, and / or annealing of one or more recessed regions, which can increase the filling volume in the recessed regions (e.g., by thermal expansion, capillary forces, etc.) and can cause physical contact and engagement of previously non-contacting regions. Figure 1C As shown, annealing can cause physical or chemical changes, such as in one or more electroactive regions 106 of the donor die 102 or in one or more electroactive regions 108 of the target die 104, which can cause or improve physical or electrical contact between the electroactive regions 106 and 108. Therefore, annealing can create or enhance electrical connections (e.g., integration) between the elements of the donor die 102 and the elements of the target die 104. Such electrical connections may occur even if the electroactive regions 106 and 108 are different (e.g., have different recess depths, are made of different materials, have different dimensions, etc.). In one embodiment, the previous discussion... Figure 1AThe described bonding can be temporary during one or more portions of the annealing process, wherein the annealing process forms a tight connection between the donor die 102 and the target die 104. In one embodiment, annealing can occur in the system in which bonding takes place. In one embodiment, annealing can occur in a system separate from the system in which bonding takes place, for example, by conveying the donor die and the target die from the bonding system to an annealing system, which may include one or more heating elements (e.g., one or more electric heating elements, one or more elements for providing radiant heating, etc.) to provide heat for annealing.

[0030] Once the donor die 102 and the target die 104 are bonded, the carrier structure 114 can be removed, such as Figure 1B As shown. Alternatively, the carrier structure 116 can then be removed. Alternatively, once the donor die 102 and the target die 104 have been annealed, the carrier structure 116 can be removed, as shown. Figure 1C As shown in the diagram. Alternatively, the carrier structure 114 may then be removed.

[0031] Figure 1D A plan view depicting an exemplary die bonding method according to this disclosure is shown. Figure 1D As shown, donor die 102 and target die 104 may have one or more alignment marks along the xy plane to facilitate die alignment as a whole. Alignment marks in the xy plane (e.g., one or more alignment marks 120 on donor die 102 or one or more alignment marks 122 on target die 104) can reduce the area or region that can be used for circuitry. One or more alignment marks may be placed in a discarded area (e.g., an area between chips) that can then be destroyed (e.g., removed) during dicing. Dicing, as used herein, refers to the mechanical separation of a region of substrate (e.g., a fabrication cell) into a smaller region (e.g., a die or chip) that may contain one or more operational units (e.g., logic devices, memory cells, etc.). Dicing can be performed using any suitable method (e.g., scribing and breaking, mechanical sawing, laser cutting, etc.) and can destroy (e.g., grind into powder or otherwise render the circuitry inoperable) a non-zero linewidth portion of the substrate volume during die separation. Alignment marks can be prepared additively or subtractively, such as by etching or deposition in the z-direction. Alignment marks 120 and 122 can be the same or different. Alignment marks 120 and 122 can be multi-directional alignment marks, meaning they can determine alignment in more than one direction, such as bidirectional alignment marks, examples of which are shown in [examples would be inserted here]. Figure 1DAlignment mark 120 is shown as 120. Alignment mark 120 and / or alignment mark 122 can be fine alignment marks, such as those used for alignment on the μm scale. Alignment mark 120 can be located on donor die 102, while target die 104 can have alignment mark 122 located in a discarded region, or vice versa. Alternatively or additionally, one or more electroactive regions and / or doped regions of donor die 102, or one or more electroactive regions and / or doped regions of target die 104 ( Figure 1D (not shown in the image) or other surface features can be used as a reference (e.g., alignment marks) for aligning the donor die 102 and / or the target die 104.

[0032] Before or during contact between the donor die 102 and the target die 104, the donor die 102 and the target die 104 can be aligned in up to three dimensions. For example, when the target die 104 contacts the donor die 102, either the donor die 102 or the target die 104 can be positioned in the xy plane. The donor die 102 or the target die 104 can be positioned by the operation of a die actuator or other die-scale element (such as a piezoelectric stepper element), or by the operation of a chuck or other carrier structure-scale element (such as a motor or other actuator). The position of the donor die 102 or the target die 104 can be adjusted relative to up to six degrees of freedom. For example, given an origin at the center portion of the donor die 102, the donor die 102 can be positioned by movement along the x-axis (e.g., in the positive or negative X direction), along the y-axis (e.g., in the positive or negative Y direction), and along the z-axis (e.g., in the positive or negative Z direction). The donor die 102 can also be positioned rotationally relative to each of these axes, for example, rotation relative to the x-axis, rotation relative to the y-axis, and rotation relative to the z-axis. That is, the donor die 102 can be positioned by free movement in space caused by six different types of movement (where the movements listed above are provided as examples, but can be described by other axes). Of course, the target die 104 can be positioned alone or in combination with the positioning of the donor die 102. Unless the context otherwise requires, positioning or location adjustment herein includes displacement, rotation, or any combination thereof.

[0033] In some embodiments, the donor die 102 and the target die 104 can be measured relative to a reference plane or structure (e.g., the XY plane), including relative to the same reference plane or structure, but the donor die 102 or the target die 104 can be flipped (before or after measurement) such that the fabrication surface of the donor die 102 and the fabrication surface of the target die 104 can be joined (e.g., see...). Figure 1D(See the bottom figure). One or more alignment marks (e.g., alignment marks 120 and 122) may be on the fabrication surface of the donor die 102 and the fabrication surface of the target die 104, respectively. Once the donor die 102 or the target die 104 is flipped, one or more alignment marks may become invisible to alignment measurement tools (e.g., due to the opacity of the die). Therefore, alignment of the flipped die can be performed based on the previously measured position of the die (e.g., one or more alignment marks on the die) relative to the structure (e.g., donor die 102 relative to carrier structure 114, or target die 104 relative to carrier structure 116).

[0034] Figures 2A to 2F This is a schematic diagram illustrating an exemplary method of die placement. Reference is made to a "donor die" (and a "donor substrate" comprising a plurality of "donor dies") and a "target die" (and a "target substrate" comprising a plurality of "target dies") to describe the process. Figures 2A to 2F "Donor die" and "target die" are relative descriptive terms, and a donor die can be used interchangeably with a target die, and vice versa. The description of donor dies and target dies... Figures 2A to 2F However, it can be described alternatively with respect to the donor substrate and the target substrate. Figures 2A to 2F The “substrate” may contain multiple “dies”, including uncut (e.g., unseparated) dies in the form of all or part of a semiconductor wafer. Figures 2A to 2F It is a cross-sectional view showing the placement of donor dies (e.g., donor dies 202A, 202B, 202C) on target dies (e.g., target dies 204A and target dies 204B). In some embodiments, Figures 2A to 2F Multiple steps described as occurring substantially simultaneously can be executed sequentially. In some embodiments, in Figures 2A to 2F The multiple steps described as occurring sequentially can be performed substantially simultaneously. In some embodiments, multiple donor dies can be aligned or placed substantially simultaneously on their respective target dies, including proximate (including adjacent) or distant (e.g., not adjacent but within the same target substrate) donor dies. In some embodiments, the steps can be performed in a different order.

[0035] Figure 2AThis is a cross-sectional view of donor dies 202A-202C to be placed on target dies 204A-204B. Donor dies 202A-202C are supported by carrier structure 214. Donor dies 202A-202C can be adhered to carrier structure 214 in any suitable manner, such as by vacuum adhesion, electrostatic adhesion, intermolecular adhesion, van der Waals adhesion, mechanical interlocking, surface reaction, static friction, gravity, etc. Donor dies 202A-202C can be adhered to carrier structure 214, for example, by using adhesives (e.g., glue) such as organic glue or polymer glue. Carrier structure 214 can be a transparent substrate, such as glass, sapphire, polymer, etc. Donor dies 202A-202C can be placed on carrier structure 214 by any suitable method (e.g., by pick-and-place tools). Carrier structure 214 can be supported by a chuck or any other suitable support structure.

[0036] Target dies 204A-204B are supported by support structure 216. In one embodiment, target dies 204A-204B may be part of an uncut or partially cut target wafer. Target dies 204A-204B may be adhered to support structure 216 in any suitable manner, such as by vacuum adhesion, electrostatic adhesion, intermolecular adhesion, mechanical interlocking, surface reaction, static friction, gravity, etc. Target dies 204A-204B may be adhered to support structure 216, for example, by using adhesives (e.g., glue) such as organic glue or polymer glue. In embodiments where, for example, target dies 204A-204B are cut dies, the support structure may be a carrier structure (e.g., similar to carrier structure 214) and may be a transparent substrate, such as a substrate of glass, sapphire, polymer, etc. Target dies 204A-204B may be placed on support structure 216 by any suitable method, such as by pick-and-place tools. The support structure 216 may be a chuck or any other suitable structure, or the support structure 216 may be supported by a chuck or any other suitable structure.

[0037] Donor dies 202A-202C and target dies 204A-204B can be aligned with each other at alignment points 203A and 205A (for donor dies 202A and target dies 204A), alignment points 203B and 205B (for donor dies 202B and target dies 204B), and alignment points 203C and 205C (for donor dies 202C and target dies 204B). In some embodiments, multiple donor dies can be placed on a single target die, and vice versa, for example, depending on the integration target. Alignment points 203A-203C are depicted for donor dies 202A-202C, and alignment points 205A-205C are depicted for target dies 204A-204B. These alignment points are provided only for ease of description and do not need to be physical features. Each die can have multiple alignment points. Alignment points can be alignment marks (e.g., Figure 1D Alignment marks), die edges, die corners, die edges, or other features on the die surface. Alignment points can be used to align the donor die and the target die, for example, by measuring the positions of various alignment points and then adjusting the positions of the donor die and / or the target die (e.g., by moving the carrier structure used to support the die) to align the alignment points of the donor die with the alignment points of the target die (or vice versa). Alignment points can be directly aligned with each other (e.g., as shown in the image). Figures 2A to 2F (As depicted). In some embodiments, alignment points may be aligned relative to each other (e.g., aligned with a predetermined relationship, such as a predetermined relationship of vector separation), for example Figure 1D As depicted at the bottom, the alignment marks do not overlap.

[0038] exist Figure 2A In this configuration, carrier structure 214 (and / or structure 216) can be positioned in a plane such as the XY plane to align the alignment point 203A of the donor die 202A with the alignment point 205A of the target die 204A.

[0039] exist Figure 2B In this process, the donor die 202A can be released from the carrier structure 214 by any suitable mechanism, such as release mechanism 230A, which can be radiation-mediated release, as will be discussed in further detail later. The donor die 202A meets the target die 204A at alignment point 207A. Release of the donor die 202A can be facilitated by gravity, electrostatic force, physical force, etc. The donor die 202A and the target die 204A meet at alignment point 207A (which represents...) Figure 2AAlignment at the combination of alignment points 203A and 205A can be assisted by any suitable alignment mechanism, including self-alignment (e.g., attraction of a region of donor die 202A to a corresponding region of target die 204A). In one embodiment, release occurs when donor die 202A comes into (at least partially) contact with target die 204A. In another embodiment, release occurs before donor die 202A comes into contact with target die 204A.

[0040] exist Figure 2C In this configuration, carrier structure 214 (and alternatively or additionally, structure 216) can be moved to align another donor die (e.g., donor die 202C) with another target die (e.g., target die 204B). The alignment of alignment point 203C (of donor die 202C) with alignment point 205C (of target die 204B) can be based on measurements of the relative positions of the alignment points (e.g., using alignment marks or features on the die or carrier structure, using the position of alignment points on another donor or target die, etc.). The alignment of alignment point 203C (of donor die 202C) with alignment point 205C (of target die 204B) can be based on one or more substantially simultaneous measurements of the relative positions of the alignment points, such as using alignment marks or features on the die or carrier structure, using alignment targets or features of another donor or target die, etc. Although the alignment of only one donor die (e.g., donor die 202C) and target die (e.g., target die 204B) is depicted, the alignment of one or more sets of donor dies and target dies can also occur substantially simultaneously, such as if, for a given relative position of carrier structure 214 and support structure 216, the alignment points of multiple donor dies are aligned with the alignment points of multiple target dies. However, the ability to place multiple donor dies substantially simultaneously can depend on the placement of the donor dies on carrier structure 214 and the capability of the release mechanism for releasing multiple donor dies.

[0041] exist Figure 2D In this configuration, the donor die 202C can be released from the carrier structure 214 via any suitable mechanism (such as release mechanism 230C). The donor die 202C encounters the target die 204B at alignment point 207C. The release of the donor die 202C can be facilitated by gravity, electrostatic force, physical force, etc. The donor die 202C and the target die 204B are aligned at alignment point 207C (which represents...). Figure 2A Alignment at the combination of alignment points 203C and 205C can be assisted by any suitable alignment mechanism, including self-alignment. In one embodiment, release occurs when the donor die 202B contacts the target die 204B (at least partially). In another embodiment, release occurs before the donor die 202B contacts the target die 204B.

[0042] exist Figure 2E In this configuration, carrier structure 214 (and alternatively or additionally, structure 216) can be moved to align another donor die (e.g., donor die 202B) with another target die (e.g., target die 204B). Alignment of alignment point 203B (of donor die 202B) with alignment point 205B (of target die 204B) can be based on prior measurements of the relative positions of the alignment points (e.g., using alignment marks on the die or carrier structure, using alignment points on another donor or target die, etc.). Alignment of alignment point 203B (of donor die 202B) with alignment point 205B (of target die 204B) can be based on one or more substantially simultaneous measurements of the relative positions of the alignment points, such as using alignment marks or features on the die or carrier structure, using alignment targets or features of another donor or target die, etc. As depicted, donor dies 202B and 202C are aligned with the same target die (e.g., target die 204B). In some embodiments, donor dies are placed on target dies in a substantially one-to-one relationship (e.g., as depicted for donor die 202A and target die 204A). In some embodiments, multiple donor dies (or target dies) may be placed on the same target die (or donor die). In some embodiments, multiple donor dies (or target dies) may be placed on uncut (e.g., unseparated) target dies (or donor dies), for example, on all or part of a substrate containing the target die (or donor die). In some embodiments, donor dies may be placed on a target die having multiple dies, including stacked (e.g., bonded) dies such as those in a three-layer die bonding stack.

[0043] exist Figure 2F In this configuration, the donor die 202B can be released from the carrier structure 214 via any suitable mechanism (such as release mechanism 230B). The donor die 202B encounters the target die 204B at alignment point 207B. The release of the donor die 202B can be facilitated by gravity, electrostatic force, physical force, etc. The donor die 202B and the target die 204B are aligned at alignment point 207B (which represents...). Figure 2A Alignment at the combination of alignment points 203B and 205B can be assisted by any suitable alignment mechanism, including self-alignment. In one embodiment, release occurs when the donor die 202B contacts the target die 204B (at least partially). In another embodiment, release occurs before the donor die 202B contacts the target die 204B.

[0044] Figures 3A to 3J This is a schematic diagram of a portion of an exemplary device for die bonding. References are made to "donor die" and "target die" for further description. Figures 3A to 3J"Donor die" and "target die" are relative descriptive terms as used in this article, and a donor die may be used instead of a target die, and vice versa. Figure 3A , Figure 3C , Figure 3E , Figure 3G and Figure 3I Each of the images is a plan view of the device during the placement of the donor die onto the target die. Figure 3B , Figure 3D , Figure 3F , Figure 3H and Figure 3JEach figure in the document is a cross-sectional view of the device during the placement of the donor die onto the target die. The views of the device in the various figures represent different operations of the device, but operations depicted as occurring in different figures may occur at different times or may alternatively be performed simultaneously, and operations depicted as occurring in the same figure may alternatively be performed individually or at different times. The donor substrate 300 and target substrate 350 are depicted as circular, but may alternatively be any suitable shape, including rectangular, square, etc. The donor substrate 300 (and target substrate 350) may be a substrate on which or on which the donor die (target die) has already been formed. The donor substrate 300 (target substrate 350) may be a “reconstructed wafer” in which the donor die (target die) (or other different portions of the semiconductor substrate) is arranged or supported on a carrier structure, for example, in a position suitable for die bonding. Therefore, the donor substrate 300 (target substrate 350) can be a carrier structure and a donor die (target die), wherein the donor die (target die) can be held (e.g., adhered) to the carrier structure by any suitable method, such as by gravity, by an adhesive (e.g., an organic adhesive, a polymer adhesive), by electrostatic force, etc. The donor substrate 300 (target substrate 350) can contain previously tested donor dies (target dies), such as donor dies (target dies) that have passed failure analysis or other post-fabrication tests. The donor substrate 300 (target substrate 350) can contain donor dies (target dies) from the same or different semiconductor substrates (e.g., fabrication substrates), including donor dies (target dies) of different types, sizes, etc. The donor substrate 300 (target substrate 350) can have donor dies (target dies) placed on the donor substrate 300 (target substrate 350) by any suitable method (e.g., a pick-and-place tool). The donor substrate 300 (target substrate 350) can be supported, such as by a carrier structure, vacuum chuck, electrostatic chuck, etc., by a top side (e.g., the fabrication surface) or a back side (e.g., the body substrate or carrier structure surface) or by different surfaces at various points. The donor substrate 300 or donor die (target substrate 350 or target die) can have fabricated devices, such as through-silicon vias (TSVs), contact pads, etc., on multiple surfaces, such that both the top side and the back side are fabrication surfaces.

[0045] exist Figure 3AIn this embodiment, the donor substrate 300 can be placed on a substrate chuck 320A. The substrate chuck 320A can be a suitable substrate chuck to support the donor substrate 300 in the form of a carrier structure for the semiconductor substrate or donor substrate 300. The substrate chuck 320A can be supported by a support structure 322A. The support structure 322A can be a movable support structure that can move in the XY plane, for example, from a first position where the substrate chuck 320A receives the donor substrate 300 to a second position where the donor substrate 300 can be measured. The substrate chuck 320A can include (e.g., support) one or more die actuators or other mechanical or electrical actuators that can move the donor die or donor substrate 300 in one or more dimensions (including in the XY plane, in the Z direction, in a rotational manner, etc.). The substrate chuck 320A can have one or more alignment marks to allow a camera or other measurement system to track the position of the substrate chuck 320A. The substrate chuck 320A may have multiple sets of alignment marks, such as coarse alignment marks and / or fine alignment marks. The substrate chuck 320A can be moved from one location to another in free space, for example, by the action of the support structure 322A. The support structure 322A can be configured to move, for example, by multiple motors or steppers, in multiple directions and at multiple scales (e.g., with coarse and fine stepping). The support structure 322A can be activated by a controller of an exemplary device, wherein the controller (not depicted) of the exemplary device can also control the placement of the donor substrate 300 on the substrate chuck 320A and other operations described herein.

[0046] The substrate chuck 320A may have measurement points (or alignment points), such as those identified by cross-shaped measurement marks 327 and circular zero-shaped measurement marks 328, which are provided only as examples, and any suitable zero-shaped measurement marks may be used therein. The measurement points can be used to place the donor substrate 300 onto the substrate chuck 320A, for example, during the movement of the substrate onto the chuck (e.g., by inserting the donor substrate using a substrate handler). Once the donor substrate 300 is placed onto the substrate chuck 320A, the measurement points can be used to measure the relative position of the donor die of the donor substrate 300. The placement of the donor die can be measured relative to the measurement points (e.g., with an accuracy up to nm). The measurement of the position of the donor die after placement can be obtained from any suitable measurement system (e.g., optical microscope, reflectometer, etc.).

[0047] Figure 3AAnother substrate chuck 320B on support structure 322B is also depicted. Substrate chuck 320B can be any suitable substrate chuck, such as being substantially identical to substrate chuck 320A. Support structure 322B can be any suitable support structure, such as being substantially identical to support structure 322A. In some embodiments, substrate chuck 320B and substrate chuck 320A can be substantially indistinguishable. In some embodiments, support structure 322B and support structure 322A can be substantially indistinguishable. Although two substrate chucks and two support structures are depicted, in some embodiments, more or fewer substrate chucks and support structures may be present in the device. Operations depicted as being performed by substrate chuck 320B (substrate chuck 320A) can be performed alternatively or additionally by any suitable substrate chuck. Similarly, operations depicted as being performed by support structure 322B (support structure 322A) can be performed alternatively or additionally by any suitable support structure.

[0048] Figure 3A A flipper 330 is also depicted. The flipper 330 can, for example, surround... Figure 3A Any suitable device for the longitudinal axis of the donor substrate 300 or the planar flipping of the substrate (e.g., donor substrate 300) depicted herein. Reference will be made to... Figure 3E and Figure 3F The flipper 330 is described in more detail.

[0049] exist Figure 3B The figure depicts a cross-sectional view of a donor substrate 300. The donor substrate 300 includes a carrier structure 314 supporting one or more donor dies (e.g., donor dies 302A-302C). The substrate may have one or more alignment points, such as alignment point 315, used for measuring the relative position of the donor dies 302A-302C with respect to the carrier structure. The donor dies may have alignment points, such as alignment points 303A-303C for the donor dies 302A-302C respectively. For ease of description, alignment points are provided schematically in these figures, and alignment points can be any suitable alignment point, including alignment marks, fabricated features, edge features, etc., as previously described. When the donor substrate 300 is in a substrate chuck (e.g., Figure 3AWhen the substrate chuck 320A is in place, the position of the donor die (e.g., donor dies 302A-302C) is measured, for example, by a measuring tool 340A. The position can be measured as an absolute position, a relative position, a position relative to other dies, a position relative to an alignment point on the substrate, etc. The measured position can be stored by the device's controller, for example, for subsequent positioning of the donor substrate 300. The measuring tool 340A can be a camera, including a still camera, a video camera, etc. The measuring tool 340A can be any suitable tool for measuring the position of the donor die, for measuring the position of the alignment point of the donor die, for measuring the position of the alignment mark of the donor die, etc.

[0050] exist Figure 3C In this configuration, a substrate chuck 320A supports a donor substrate 300, and a support structure 322A supports the substrate chuck 320A. Once the position of the donor die has been measured, the substrate chuck 320A can be moved, for example, out of the measurement position. The support structure 322A can be moved (e.g., along direction 324) to the position of support structure 322B, while the support structure 322B can be moved (e.g., along direction 323) to the position of support structure 322A. These positions are provided as examples, and the support structures can be moved to different positions. For example, in some embodiments, the support structure 322B can be moved to a loading position, such as to receive a target substrate (e.g., target substrate 350). The substrate chuck 320A can then occupy another position in the device (e.g., a bonding position, a flip position, etc.). The substrate chuck 320A is moved after the position of the donor die has been measured (e.g., in...). Figure 3B The position moved after the measurement (as depicted in the figure) can be configured to allow the flipper 330 to accept the donor substrate 300 from the substrate chuck 320A.

[0051] exist Figure 3D The text describes the movement of the donor substrate 300 to the location of the substrate. Figure 3B The position outside the measurement location. This movement can correspond to the donor substrate 300 at... Figure 3C Movement in direction 324 (e.g., by movement of support structure 322A). This drawing is provided to show the continuity of the die joining process in both a plan view and a sectional view, but it can be compared with... Figure 3C or Figure 3E The processes described herein occur substantially simultaneously, wherein steps described previously as occurring individually (including sequentially) can be performed substantially simultaneously.

[0052] exist Figure 3EIn this configuration, the target substrate 350 can be placed on a substrate chuck 320B. The substrate chuck 320B can be any suitable substrate chuck as previously described. The substrate chuck can be supported by a support structure 322B, which can be any suitable support structure as previously described.

[0053] exist Figure 3E In this process, the donor substrate 300 can be transferred to the flipper 330. The flipper 330 can accept (e.g., acquire) the donor substrate from the substrate chuck 320A, for example, by using edge jigs, vacuum jigs, finger pins, etc. The flipper 330 can hold the donor substrate by one or more edges (e.g., one or more edges of the carrier structure 314) or one or more sides (e.g., the back side of the carrier structure 314 that does not support the donor die). The flipper 330 can rotate the donor substrate 300 upside down (e.g., relative to the direction of gravity). The flipper 330 can invert (e.g., reverse) the donor substrate 300 relative to the XY plane previously occupied by the donor substrate 300 or in any other suitable direction. The flipper 330 can hold the donor substrate 300 or place the donor substrate 300 in a support structure such that the donor substrate 300 faces the plane of the target substrate 350. The flipper 330 can rotate or shift the donor substrate 300 in the XY plane, and shift or rotate the donor substrate 300 out of the XY plane. The flipper 330 can be any suitable rotation or translation device.

[0054] exist Figure 3F The figure depicts a cross-sectional view of a target substrate 350. The target substrate 350 includes a carrier structure 316 supporting one or more target dies (e.g., target dies 304A-304C). The substrate may have one or more alignment points, such as alignment point 317. The target dies may have alignment points, such as alignment points 305A-305C for target dies 304A-304C respectively. For ease of description, alignment points are provided schematically in these figures, and alignment points can be any suitable alignment point, including alignment marks, fabricated features, edge features, etc., as previously described. When the target substrate 350 is in a substrate chuck (e.g., Figure 3E When on the substrate chuck 320B, the position of one or more target dies (e.g., target dies 304A-304C) is measured, for example, by means of a measurement tool 340B. The measurement tool 340B can be used to measure the position of one or more donor dies (e.g., ...). Figure 3BThe measuring tool 340B may be the same as or different from the measuring tool 340A for measuring the position of the donor dies 302A-302C. Relative to the measuring tool 340A, the measuring tool 340B can measure different numbers of positions, substantially different positions (e.g., positions on the target substrate 300 that differ from the positions measured on the donor substrate 300 by the measuring tool 340A), different positions relative to the dies (e.g., donor dies 302A-302C relative to target dies 304A-304C), etc. These positions can be measured as absolute positions, relative positions, positions relative to other dies, positions relative to alignment points on the substrate, etc. The measured positions can be stored by the device's controller, for example, for subsequent positioning of the target substrate 350. The measuring tool 340B may be a camera, including a still camera, a video camera, etc. The measuring tool 340B may be any suitable tool for measuring the position of the donor dies, for measuring the position of the alignment points of the donor dies, for measuring the position of alignment marks on the donor dies, etc. The target substrate 350 may undergo deformation due to being held by a substrate chuck or similar device. The measurement tool 340B also enables the determination of the deformation of the target substrate by measuring the location. The controller can determine the deformation of the target substrate 350 based on those measured locations (e.g., from curve fitting, using a physical deformation model, etc.).

[0055] exist Figure 3F In the middle, the donor substrate 300 is supported by the bonding support structure 332. The bonding support structure 332 can be ( Figure 3E A portion of the flipper 330, or the donor substrate 300, can be placed into the bonding support structure 332 via the flipper 330. The bonding support structure 332 can maintain the planes of the donor substrate 300 and the target substrate 350 relative to each other. The bonding support structure 332 can hold the donor substrate via a carrier structure 314 (including through one or more edges of the carrier structure 314). When in the bonding support structure 332, the position of the donor substrate 300 can be measured, for example, by a measuring tool 340C, to achieve, for example, relative positioning between the donor substrate 300 and the target substrate 350. The measuring tool 340C can be any suitable measuring tool. The measuring tool 340C can measure the position of the donor die (e.g., donor dies 302A-302C), the position of the alignment point 315, etc. Compared to measurement tools 340A or 340B, measurement tool 340C can measure significantly fewer locations, and the controller can determine the location of the target substrate 350 based on those fewer locations (e.g., through curve fitting, using a physical deformation model, etc.). The controller can also determine the location of the target substrate 350 based on the measurement locations of the donor dies 302A-302C (such as those from...). Figure 3BThe measurement tool 340C determines the updated position for the donor die (e.g., donor dies 302A-302C) by combining the measurement positions of the donor substrate 300 and the donor substrate 300. The donor substrate 300 may undergo deformation due to being held by the substrate chuck, movement of the flipper 330, suspension from the bonding support structure 332, etc. The measurement tool 340C also enables the determination of the deformation of the donor substrate by measuring the positions. As described above, the measurement tool 340C can measure significantly fewer positions compared to the measurement tools 340A and 340B, and the controller can determine the deformation of the donor substrate 300 based on fewer positions than those measured by the measurement tool 340A on the donor substrate 300 or by the measurement tool 340B on the target substrate 350 (e.g., by curve fitting, using a physical deformation model, etc.).

[0056] exist Figure 3G In this configuration, the target substrate 350 is supported by a substrate chuck 320B, and the substrate chuck 320B is supported by a support structure 322B. Once the position of the target die is measured, the substrate chuck 320B can be moved to engage with a flipper (e.g., by a flipper). Figure 3F The donor substrate 300 is aligned with the support structure 322B (supported by the bonding support structure 332B). Support structure 322B can be moved (e.g., along direction 326) to the position of support structure 322A, while support structure 322A can be moved (e.g., along direction 325) to the position of support structure 322B. These positions are provided as examples, and the support structures can be moved to different positions. For example, in some embodiments, support structure 322A can be moved to a loading position to receive an additional target substrate (e.g., target substrate 350). The substrate chuck 320B can then occupy another position in the device (e.g., a bonding position). The substrate chuck 320B is used after measuring the position of the target die (e.g., at...). Figure 3F The position moved (after the measurement depicted in the diagram) can be configured to place the donor die of the donor substrate 300 onto the target die of the target substrate 350. The substrate chuck 320B can be aligned with the donor substrate 300 in the flipper 330, which can be held above the plane of the substrate chuck 320B (e.g., ...). Figure 3G (as depicted in the top view), wherein the donor substrate 300 is at least partially above the plane of the substrate chuck 320B (e.g., shielding the substrate chuck 320A).

[0057] exist Figure 3H In this configuration, the donor substrate 300 and the target substrate 350 are aligned. The donor substrate 300 can be aligned with the target substrate 350 by moving the engagement support structure 332 (e.g., moving it in any direction or orientation of orientation 333). The target substrate 350 can be aligned by moving the substrate chuck (e.g., ...). Figure 3GThe substrate chuck 320B) or support structure (e.g., Figure 3G The support structure 322B is aligned with the donor substrate 300. The donor substrate 300 and the target substrate 350 can be aligned with each other, including by both coarse and fine alignment, such as alignment by the relative positions of one or more alignment points (e.g., alignment point 315 of the donor substrate 300 and alignment point 317 of the target substrate 350). In some embodiments, the donor substrate 300 and the target substrate 350 can be aligned, for example by coarse alignment. In some embodiments, once the donor substrate 300 and the target substrate 350 are aligned, one or more donor dies of the donor substrate 300 can be aligned with one or more target dies of the target substrate 350. Figure 3H The alignment of the donor die 302B with the target die 304B is depicted (e.g., alignment point 303B of the donor die 302B and alignment point 305B of the target die 304B). Once the donor die and the target die are aligned, the donor die can be placed on the target die by any suitable method (e.g., die actuator activation, gravity acceleration, electrostatic actuation, etc.).

[0058] exist Figure 3I In this process, an additional donor substrate (e.g., donor substrate 300-2 having carrier structure 314-2) is placed on substrate chuck 320A for additionally placing the donor die onto the target die. In some embodiments, the additional donor substrate can be placed on substrate chuck 320A after the substrate of the previous donor substrate has been removed from substrate chuck 320A, for example, if the substrate of the donor substrate has been removed from flipper 330 and replaced on substrate chuck 320A. In some embodiments, the previous donor substrate can be removed from flipper 330 without the aid of substrate chuck 320A, for example, by removing it from flipper to additional substrate chuck (not depicted) or any other suitable removal process. The additional donor substrate can be placed on substrate chuck 320A after the previous donor substrate has been accepted by flipper 330, or at any time when substrate chuck 320A (or another substrate chuck) is idle. The additional donor substrate (e.g., donor substrate 300-2) may be substantially the same as or different from the previous donor substrate (e.g., donor substrate 300). The processing of donor substrate 300-2 by placing the donor die on the target die can be as previously described. Figures 3A to 3H The process is carried out as described, for example, by placing it on an additional target substrate (not depicted). The donor substrate 300-2 can be placed on the substrate chuck 320A, while the donor die of the donor substrate 300 is placed on the target die of the target substrate 350, for example, substantially simultaneously.

[0059] exist Figure 3JIn the process, measure the location of the donor die (e.g., donor dies 302A-2 to 302C-2) and / or mark 315-2, as previously stated. Figure 3B As described.

[0060] exist Figure 3J In this configuration, an additional donor die of donor substrate 300 is placed on target die of target substrate 350. The positions of donor substrate 300, target substrate 350, or combinations thereof can be adjusted to align the additional donor die of donor substrate 300 with the target die of target substrate 350. As depicted, donor substrate 300 is positioned such that alignment point 303A of donor die 302A is aligned with alignment point 305A of target die 304A by any suitable method (e.g., by radiation-mediated transfer, which will be described in more detail later). Donor dies 302B are depicted as being placed on target die 304A in their... Figure 3H After alignment at alignment point 307B, it is joined to the target die 304B. As will be appreciated, this process can be repeated as appropriate. Figures 3A to 3H The various steps are used to bond multiple dies and process multiple donor substrates and target substrates.

[0061] Additionally, after the donor dies 302A-302C are placed on the target dies 304A-304C, the carrier substrate 314 (which may no longer hold a significant number of donor dies) can be removed from the bonding support structure 332 by any suitable means. The carrier substrate 314 can be removed to the flipper 300 or any other suitable location.

[0062] Various techniques for removing or removing byproducts from radiation-mediated die bonding are described below. These techniques are described with reference to “donor die” and “target die,” which are relative descriptive terms as used herein, and a donor die may alternatively be a target die, and vice versa. A donor die may alternatively be a donor substrate, and / or a target die may alternatively be a target substrate. A donor die may be bonded to a target substrate, a donor substrate may be bonded to a target substrate, or a donor substrate may be bonded to a target die. Multiple donor dies may be bonded to a single target die, and vice versa. For example, techniques for removing or removing byproducts are described with respect to the use of a carrier structure (e.g., carrier structure 414) to hold a donor die. As will be understood, techniques for removing or removing byproducts are not limited to use with a carrier structure or are not limited to use with a donor die. For example, additionally or alternatively, byproduct removal or removal techniques can be used with individual dies, can be used with wafers having uncut dies, etc. Additionally or alternatively, when properly and appropriately configured, byproduct removal or removal techniques can be used with, for example, target dies (such as, individual target dies, wafers having uncut target dies, carrier structures holding target dies (e.g., carrier structure 416), etc.), used via, for example, the target die, etc.

[0063] Figures 4A to 4C This is a schematic diagram illustrating an exemplary method of die bonding by extracting gaseous byproducts. Figures 4A to 4C This is a cross-sectional view of bonding one or more donor dies (e.g., donor dies 402A-402C) to one or more target dies (e.g., target dies 404A-404C) with byproduct removal or cleanup. Figure 4A In this embodiment, donor dies 402A-402C are supported by carrier structure 414. Carrier structure 414 may be at least partially transparent to at least a certain range of radiation in at least some regions. As used herein, “transparent” (and its grammatical suffix) does not require 100% radiation intensity to pass through the material, but rather requires that for at least a certain wavelength range, a majority or significant portion of the radiation (e.g., at least 25%, at least 50%, at least 80%, at least 90%, at least 95%, etc.) passes through the material. Carrier structure 414 may be transparent to visible light, infrared radiation, ultraviolet radiation, particles, or electron beams. Carrier structure 414 may be made of any suitable material, such as glass, silicon dioxide, sapphire, acrylic, etc. Carrier structure 414 may be an uncut wafer in which one or more donor dies (e.g., donor dies 402A-402C) are a part.

[0064] In some embodiments, one or more donor dies (e.g., donor dies 402A-402C) are adhered to the carrier structure 414 by, for example, a layer of adhesive 432A-432C. Hereinafter, “adhesion” (and its grammatical suffix) encompasses the retention of one material to another in a release-prone manner, including where the release is chemically mediated, physically mediated, electrically mediated, etc. Adhesive 432A-432C can be any suitable adhesive, such as organic glue, polymer glue, etc. The adhesive can be applied to the carrier structure 414 (e.g., by spin coating), and then one or more donor dies (e.g., donor dies 402A-402C) are applied to the adhesive 432A-432C on the substrate. Adhesive 432A-432C can be applied to the surface of one or more donor dies (e.g., donor dies 402A-402C) by means such as inkjet printing or dipping, and then the one or more donor dies (e.g., donor dies 402A-402C) and adhesive 432A-432C are transferred to carrier structure 414. Adhesive 432A-432C can have any suitable thickness. Figure 4A As shown, adhesives 432A-432C may be present in some areas (e.g., of carrier structure 414) but not in others. In some embodiments, adhesives 432A-432C may be present across substantially all surfaces of carrier structure 414, including areas where no donor dies are adhered (e.g., due to spin-coating adhesives 432A-432C onto carrier structure 414 before placing one or more donor dies (e.g., donor dies 402A-402C)). In some embodiments, after placing one or more donor dies (e.g., donor dies 402A-402C), adhesives 432A-432C may be actively removed from areas where no donor dies were placed, for example by cleaning, developing, oxidation, etc. In some embodiments, adhesives 432A-432C may be present in some areas of one or more donor dies (e.g., between donor dies 402A-402C and carrier structure 414) but not in others. For example, the area of ​​carrier structure 414 covered by an adhesive (such as adhesive 432A) may be smaller than the area of ​​carrier structure 414 covered (e.g., in contact) by one or more donor dies (such as donor die 402A), for example if adhesives 432A-432C are inkjet printed on carrier structure 414 and donor die 402A is placed on a drop of adhesive 432A.

[0065] Adhesives 432A-432C can be adhesives that form a gas when exposed to radiation or heat. In this document, “gas,” “gaseous,” and other grammatical suffixes are used to refer to any form of substance other than a solid (e.g., vapor, smoke, suspended particles, etc.) that does not have a fixed shape (e.g., flowing) and a fixed volume (e.g., is dispersible). A gas can be a gaseous product (e.g., a byproduct) of the volume expansion of the adhesive. For example, adhesives 432A-432C can be adhesives that undergo a phase change (e.g., at atmospheric temperature and pressure) from a solid, gel, or liquid to a gas (e.g., vapor) when excited by or heated by a radiative burst. In another example, adhesives 432A-432C can be adhesives that undergo chemical changes (e.g., decomposition, oxidation, reduction, etc.) to form a gas when excited by or heated by a radiative burst. In some embodiments, adhesives 432A-432C can form particles (e.g., smoke) suspended in a gas, either in conjunction with gas formation or alone. The particles may have the same or different chemical composition as the binders 432A-432C. In one example, binders 432A-432C may contain a dissolved gas that can at least partially precipitate when exposed to radiation or heat, and in addition to any gas, the dissolved gas may also generate bubbles within the binders 432A-432C, thereby increasing the volume occupied by the binder. The binder may be any suitable material undergoing radiation-mediated volume expansion, wherein radiation-mediated volume expansion includes heat-mediated volume expansion. The volume expansion of the binder may cause the donor die 402 to be released from the carrier structure 414 and toward the target die (e.g., one or more target dies 404A-402C) on the carrier structure 416, which may be a carrier structure holding one or more dies, a wafer having one or more uncut dies, etc., as will be referred to Figure 4B and Figure 4C As described above, a radiation-mediated placement of a donor die (e.g., one or more donor dies 402A-402C) on a target die (e.g., one or more dies 404A-404C) can achieve die bonding, as previously described.

[0066] Radiation supplied to cause the adhesive to expand can be supplied through the carrier structure 414 by a radiation source (e.g., one or more radiation sources 442A-442C). Figures 4A to 4C The diagram depicts multiple radiation sources 442A-442C to illustrate various embodiments, but in some embodiments, multiple radiation sources may instead be a single radiation source. Reference will also be made to... Figure 4B and Figure 4CThe differences between the multiple radiation sources 442A-442C are described in more detail. In some embodiments, multiple radiation sources may be used to perform operations involving radiation-mediated die bonding. In some embodiments, a single radiation source may be used to perform operations involving radiation-mediated die bonding. Although the radiation sources 442A-442C are schematically depicted as incandescent light bulbs, any suitable radiation source may be used, such as a broadband light source (e.g., white light), a light-emitting diode (LED), a laser, etc. One or more radiation sources 442A-442C may provide radiation with any suitable wavelength and wavelength range (e.g., bandwidth). One or more radiation sources 442A-442C may have any suitable spot size. Figures 4A to 4CAs depicted, radiation sources 442A and 442C have spot sizes smaller than the donor dies (e.g., smaller than donor dies 402A and 402C, respectively). However, radiation source 442B has a spot size approximately the size of the donor die (e.g., donor die 402B). In some embodiments, radiation sources 442A-442C may expose an area smaller than the area of ​​the donor dies (e.g., one or more donor dies 402A-402C) at a time, such as for selecting one donor die at a time for release. In some embodiments, one or more radiation sources 442A-442C may have larger spot sizes and may be focused at a time on an adhesive (e.g., adhesives 432A-432C) on the back side of a donor die, such as by means of a focusing optics (not depicted). In some embodiments, one or more radiation sources 442A-442C may be focused on different donor dies (e.g., one or more donor dies 402A-402C) at different times (e.g., when one or more radiation sources 442A-442C are aligned with their respective corresponding target dies (e.g., one or more target dies 404A-404C)) to release one or more donor dies aligned at any given position of the carrier structure 414 relative to the respective target dies. In some embodiments, relative movement (e.g., relative movement in the direction 444 depicted for the radiation source 442C) may exist between the radiation and the adhesive of the donor die (e.g., donor die 402C) to release the donor die (e.g., donor die 402C) for die bonding. In one embodiment, the radiation source 442C itself may be movable in the direction 444. In one embodiment, the radiation source 442C includes optics (not depicted) for generating the relative movement. In one embodiment, relative movement can be generated at least partially by movement of the carrier structure 414. The carrier structure 414 can be at least partially transparent to radiation of the wavelength (or wavelength range) that causes radiation-mediated volume expansion in the adhesives 432A-432C. Radiation from the radiation sources 442A-442C can penetrate the carrier structure 414 to reach the adhesive 432A-432C on the back side of one or more donor dies (e.g., donor dies 402A-402C) to cause radiation-mediated release (and bonding) of one or more donor dies.

[0067] Figure 4BThe volume expansion of adhesives 432A-432C is depicted. As adhesives 432A-432C are exposed to radiation provided by radiation sources 442A-442C, adhesives 432A-432C can generate gases (e.g., gaseous byproducts) in one or more regions 434A-434C. In some embodiments, one or more regions 434A-434C containing gas (e.g., as shown in the image) can be generated at the interface between adhesives 432A-432C and carrier structure 414. Figure 4B (As shown). In some embodiments, one or more gas-containing zones may be created within adhesives 432A-432C, such as at a penetration depth within adhesives 432A-432C (e.g., measured from the interface between adhesives 432A-432C and carrier structure 414). In some embodiments, one or more gas-containing zones may be created at the interface between adhesives 432A-432C and donor cores 402A-402C. In some embodiments, gas may be generated throughout adhesives 432A-432C, including at substantially equal densities. Although Figure 4B It is shown that each of the zones 434A-434C exists simultaneously, but it should be understood that this is not necessary, and one of the zones 434A-434C may be generated at a different time than another zone in the same zone 434A-434C.

[0068] In some embodiments, the initial volume expansion of adhesives 432A-432C may not release a significant amount of gas to the exterior of adhesives 432A-432C. For example, the initial volume expansion of adhesives 432A-432C may not release gas into a tool volume, which may include one or more of the following: the volume between carrier structures 414 and 416; the volume surrounding one or more donor dies 402A-402C; the volume surrounding one or more target dies 404A-404C; the volume between one or more donor dies 402A-402C and one or more target dies 404A-404C; the volume outside the area between carrier structures 414 and 416; or a combination thereof. Although the term “tool volume” is used herein, operations may not occur within a tool (e.g., a specialized tool for die bonding) compared to a vacuum chamber, laboratory bench, or another location, and the tool volume should be considered to encompass the volume near the die bonding process, regardless of whether the process occurs within the tool. For example, as shown in Figure 4, gas can be generated in one or more zones 434A-434C, which is contained by the deformation of adhesives 432A-432C and is not released into the tool volume. In some embodiments, the initial volume expansion of adhesives 432A-432C can release gas into the tool volume. In some embodiments, the release of gas into the tool volume can be relatively constant, for example, due to gas precipitation from the solid solution. In some embodiments, the release of gas into the tool volume can be time-varying, for example, due to the rupture of bubbles or other containment structures encapsulating one or more zones 434A-434C. In some embodiments, the gas extraction method (referring to...) Figure 4C (Detailed description follows) This can be used to remove or purge gas from at least a portion of the tool volume after gas release (e.g., after radiation is applied to adhesives 432A-432C, during radiation application to adhesives 432A-432C, etc.). In some embodiments, a gas extraction operation can be used to remove or purge gas (or any other gaseous material) from at least a portion of the tool volume before radiation is applied to adhesives 432A-432C (including substantially always). That is, the gas extraction operation can be operated even when there is no gas in the tool volume (e.g., no gas is generated due to the volume expansion of adhesives 432A-432C).

[0069] Figure 4CThe gas release resulting from the volume expansion of adhesives 432A-432C and various gas extraction operations is described. In some embodiments, when adhesives 432A-432C are exposed to sufficient radiation, adhesives 432A-432C (or another surface, such as bubbles) can release gas contained in one or more zones 434A-434C. The gas can then escape into the tool volume for extraction by one or more gas extraction methods. In some embodiments, the gas can be extracted by operating a gas stream (e.g., streams 450A-450D) such as an inert gas, dry nitrogen, dry air, argon, suppressing gas, etc. The gas can be any suitable gas, including low-particulate atmospheres. The gas can be any gas that does not react with the dies (e.g., one or more donor dies 402A-402C and / or one or more target dies 404A-404C) under the conditions within the tool volume, and is not limited to inert gases or other chemically inert gases. For example, in some embodiments, the gas may contain oxygen, hydrogen, or other oxidizing or reducing agents, including gaseous or gaseous components, which may facilitate further decomposition of gases (e.g., gaseous byproducts) generated by the volume expansion of the binder (e.g., binders 432A-432C). The flow may expel the gas (e.g., gaseous byproducts) between carrier structure 414 and carrier structure 416, or from any other suitable portion of the tool volume. The flow may operate based on a pressure differential, wherein the flow enters at a higher pressure and / or a higher velocity than the gas it displaces within the tool volume. In some embodiments, the flow may be laminar, as depicted for flow 450A. In some embodiments, the flow may be turbulent, as depicted for portions of flows 450B-450D. In some embodiments, the flow may be laminar as it enters the tool volume and may become turbulent as it passes through elements within the tool volume, such as one or more donor dies 402A-402C, one or more target dies 404A-404C, etc.

[0070] In some embodiments, the region between carrier structure 414 and carrier structure 416 may be located on one side (e.g., as shown in the figure). Figure 4C The depicted right-hand side) provides flow, and the flow can be on the opposite side of the region between the carrier structure 414 and the carrier structure (e.g., as shown). Figure 4C (The depicted left-hand side) exits. In some embodiments, flow may be provided alternatively or additionally through carrier structure 414 and / or carrier structure 416. For example, flow may pass through one or more ports in carrier structure 414 and / or carrier structure 416. Figure 4C The image depicts two exemplary ports—port 452 with a constant cross-sectional width and a tapered port 454. (Refer to...) Figure 7The geometry of the ports is discussed in more detail. Exemplary ports are depicted in carrier structure 414, but may alternatively or additionally exist in carrier structure 416. Exemplary ports are depicted located between the attachment sites of donor dies 402A and 402C (e.g., port 452), and between the attachment sites of donor dies 402B and 402C in carrier structure 414 (e.g., port 454). However, ports for draining or supplying flow can be located at any suitable location, such as on the edges of carrier structure 414 and / or carrier structure 416, in carrier structure 414 below the attachment points of one or more donor dies 402A-402C, etc. In some embodiments, flow or drain flow may be supplied by one or more nozzles, which may be introduced into the tool volume (e.g., between carrier structure 414 and carrier structure 416) in a discrete or continuous manner.

[0071] In some embodiments, instead of or attached to a flow (e.g., an inert gas flow), gas can be extracted by reducing pressure (e.g., a vacuum). The reduced pressure can be operated to cause a flow through the tool volume, for example, substantially the opposite of the gas flow described previously. For example, with or without the provision of an additional (e.g., inert) gas, a flow can be induced by reducing pressure, which can cause a flow (e.g., extraction) of gas (e.g., gaseous byproducts) through the tool volume. In some embodiments, elements described for providing a flow can be used alternatively or additionally to provide the reduced pressure, including by connecting the tool volume to any suitable reduced pressure source and / or pump (e.g., a rotary pump, diaphragm pump, piston pump, diffusion pump, cryogenic pump, etc.). The reduced pressure can blow gas (e.g., gaseous byproducts) between carrier structure 414 and carrier structure 416, or from any other suitable portion of the tool volume. The reduced pressure can be operated based on a pressure differential, wherein the pressure differential provided by applying the reduced pressure vents gas from one or more zones of the tool volume. Applying the reduced pressure can induce a flow in response to the pressure differential. In some embodiments, the flow mediated by the reduced pressure can be laminar, as depicted for flow 450A. In some embodiments, the flow can be turbulent, as depicted for portions of flows 450B-450D. In some embodiments, the flow can be laminar in some portions of the tool volume and turbulent in others.

[0072] In some embodiments, the region between carrier structure 414 and carrier structure 416 may be located on one side (e.g., as shown in the figure). Figure 4CReduced pressure is provided at the depicted left-hand side. In some embodiments, the reduced pressure may be applied alternatively or additionally through carrier structure 414 and / or carrier structure 416. For example, the reduced pressure may create a pressure difference through one or more ports (such as port 452 and / or port 454) in carrier structure 414 and / or carrier structure 416. In some embodiments, the reduced pressure (e.g., pressure difference) may be applied by one or more nozzles that may be introduced into the tool volume (e.g., between carrier structure 414 and carrier structure 416) in a discrete or continuous manner.

[0073] Using reduced pressure and / or flow may or may not result in a decrease in pressure within the tool volume. For example, the pressure within the tool volume may be substantially the same as atmospheric pressure. The pressure within the tool volume may be higher or lower than atmospheric pressure (e.g., within ±5%, ±10%, ±25%, ±50%, etc. of atmospheric pressure). The pressure within the tool volume may be in the rough vacuum range (e.g., 760 Torr to 25 Torr) or the medium vacuum range (e.g., 25 Torr to 1 x 10⁻⁶). -3 Torr), high vacuum range (e.g., 1x10), -3 Up to 1x10 -9 Torque), ultra-high vacuum range (e.g., 1x10), -9 Up to 1x10 -12 Torque), extremely high vacuum range (e.g., less than 1x10⁻⁶) -12 (e.g., pressure in the tool volume). The pressure in the tool volume can be higher than atmospheric pressure, for example, in the range of 1 to 5 times atmospheric pressure. The pressure in the tool volume can vary. For example, in some embodiments, the pressure between carrier structure 414 and carrier structure 416 can be higher than the pressure around carrier structure 414 and carrier structure 416 (e.g., overpressure). In another example, in some embodiments, the pressure between carrier structure 414 and carrier structure 416 can be lower than the pressure around carrier structure 414 and carrier structure 416 (e.g., negative pressure). The pressure in the tool volume can be within any suitable range. In some embodiments, the pressure in the tool volume can be adjusted to control the venting rate or volume expansion rate of the adhesive (e.g., adhesives 432A-432C).

[0074] Figure 5 This is a schematic diagram of an exemplary apparatus for die bonding using extraction of gaseous byproducts and a mask. Figure 5 This is a cross-sectional view of the donor die (e.g., donor die 502) bonded to the target die (e.g., target die 504). Figure 5In this configuration, one or more donor dies 502 are supported by a carrier structure 514, which can be any suitable carrier structure, such as those previously referenced. Figures 4A to 4C The carrier structure 514 is described above. As previously described, the carrier structure 514 can be completely transparent, partially transparent (e.g., at least 99% transparent, at least 95% transparent, at least 90% transparent, at least 80% transparent, at least 50% transparent, etc.), intermittently transparent (e.g., the region on which the donor die 502 is placed is transparent), etc. The carrier structure 514 can have any properties or be used to perform the previously referenced Figures 1A to 1D The carrier structure 114 (or carrier structure 116). Figures 2A to 2F The carrier structure 214 (or carrier structure 216) Figures 3A to 3J Carrier structure 314, carrier structure 316, carrier structure 314-2, or Figures 4A to 4C The carrier structure 414 describes any function.

[0075] The carrier structure 514 may be coated with adhesive 562. Adhesive 562 may be any suitable expandable adhesive capable of volume expansion upon exposure to appropriate radiation. Adhesive 562 may have any properties or be used to perform the previously referenced... Figures 4A to 4C Adhesive 562 may perform any of the functions described in adhesives 432A-432C. Adhesive 562 may be present in a homogeneous or non-homogeneous layer, as previously referenced. Figures 4A to 4C The continuity of adhesives 432A-432C is described. Adhesive 562 can be an adhesive that forms a gas when exposed to radiation or heat. For example, adhesive 562 can be an adhesive that undergoes a phase change from solid, gel, or liquid to gas (e.g., at atmospheric temperature and pressure) when excited or heated by a radiation burst. Adhesive 562 can be an adhesive that undergoes a chemical change (e.g., decomposition) that forms a gas when excited or heated by a radiation burst. In some embodiments, adhesive 562 can expand in volume by partially forming a gas when exposed to radiation or heat. For example, adhesive 562 can contain dissolved gases that can partially precipitate when exposed to radiation or heat, and can generate bubbles within the adhesive, thereby increasing the volume occupied by the adhesive. Adhesive 562 can be any suitable material that undergoes radiation-mediated volume expansion. The volume expansion of adhesive 562 can cause donor die 502 to be released from carrier structure 514 (and diaphragm 560) and (e.g., in direction 530) toward target die 504 on carrier structure 516 (such as a carrier structure holding one or more dies, a wafer having one or more uncut dies, etc.). As previously described, the radiation-mediated placement of donor die 502 on target die 504 enables die bonding.

[0076] Adhesive 562 may be covered by diaphragm 560, which may be any suitable flexible diaphragm, such as a polymer diaphragm, metal diaphragm, plastic diaphragm, etc. Diaphragm 560 may be a diaphragm applied to an uncut wafer prior to dicing, which may hold the diced dies of the wafer together as a reconstructed wafer (e.g., substantially reconstructing the arrangement of the diced dies of the wafer prior to dicing). Diaphragm 560 may expand in one or more directions, such as expanding in the xy plane, expanding in the z direction, expanding radially, etc. Diaphragm 560 may be stretchable, such as allowing donor dies 502 to be separated, such as after dicing. One or more donor dies 502 may be placed on diaphragm 560 by any suitable means or means (e.g., by pick-and-place tool). Diaphragm 560 may be configured to allow adhesive 562 to expand (e.g., when appropriate radiation is supplied) without tearing or otherwise causing gaseous byproducts of volume expansion into the tool volume, as referenced. Figures 6A to 6D Further described. The diaphragm 560 can be configured to form one or more bubbles as the adhesive 562 expands in volume (e.g., by applying appropriate radiation).

[0077] One or more donor dies 502 may be adhered to the diaphragm 560 by any suitable means (e.g., by adhesive 533), which may be any suitable adhesive that can withstand or does not undergo volume expansion when subjected to radiation. Adhesive 533 may have any properties or be used to perform the previously referenced Figures 4A to 4C The adhesive 533 may function as described in adhesives 432A-432C. Alternatively, adhesive 533 may be an adhesive that does not expand when exposed to radiation. In some embodiments, adhesive 533 and adhesive 562 may be the same adhesive. In some embodiments, adhesive 533 and adhesive 562 may be different adhesives. In some embodiments, adhesive 533 may be able to expand in volume, but adhesive 533 may not be exposed to radiation when adhesive 562 is exposed, for example, due to diaphragm 560, which may be at least partially opaque to the radiation used to expand adhesive 562. In some embodiments, adhesive 533 may not be able to expand in volume even when exposed to the same radiation used to expand adhesive 562, for example, if diaphragm 560 is at least partially transparent. In some embodiments, adhesive 533 and adhesive 562 may expand (at least partially) when exposed to radiation. In some embodiments, adhesive 533 may not produce any significant gas (e.g., gaseous byproducts) when exposed to radiation.

[0078] The radiation supplied to cause the adhesive to expand can be supplied through the carrier structure 514 by radiation source 542, which can be any suitable radiation source. Radiation source 542 can have any properties or be used to perform the previously referenced... Figures 4A to 4C The source 542 may function as described in one or more radiation sources 442A-442C. Although source 542 is schematically depicted as an incandescent light bulb, any suitable radiation source may be used, such as a broadband light source (e.g., white light), a light-emitting diode (LED), a laser, etc. Source 542 may provide radiation with any suitable wavelength and wavelength range (e.g., bandwidth). Source 542 may have any suitable spot size. In some embodiments, source 542 may expose an area smaller than the area of ​​donor die 502 at a time, such as for selecting one donor die at a time for release. In some embodiments, source 542 may have a larger spot size and may be focused at a time on the adhesive on the back side of a donor die, such as by means of a focusing optics (not depicted). In some embodiments, source 542 may be focused on different donor dies 502 at different times (e.g., when source 542 is aligned with a respective corresponding target die 404) in order to release those one or more donor dies 502 aligned at any given position of carrier structure 514 relative to the respective one or more target dies 504. In some embodiments, the area exposed by source 542 may be limited by mask 570. Mask 570 may be at least partially opaque to radiation from source 542. As used herein, “opaque” (and its grammatical suffix) does not require 100% of the radiation intensity to be blocked (e.g., absorbed) by the material, but rather requires that for at least a certain wavelength range, most or a significant portion of the radiation may be absorbed or reflected by the material (e.g., at least 25%, at least 50%, at least 80%, at least 90%, at least 95%, etc.). Mask 570 may have one or more openings through which radiation from source 542 may pass in order to cause expansion of adhesive 562 corresponding to one or more donor dies 502. Mask 570 may limit the spot size of the radiation. Mask 570 may block radiation-induced expansion of adhesive 562 in areas other than those corresponding to the one or more openings.

[0079] In some embodiments, relative movement may exist between the radiation and the adhesive of the donor die 502, such as relative movement in direction 544, to release the donor die 502 for die bonding. For example, the source 542 may sweep radiation across the carrier structure 514, such as in direction 444. In one embodiment, the source 542 itself may be movable in direction 544. In one embodiment, the source 542 includes optics (not depicted) for inducing relative movement. In one embodiment, relative movement may be generated in part by movement of the carrier structure 514. In some embodiments, relative movement (such as in direction 572) may exist between the mask 570 and the adhesive of the donor die 502 to release the donor die 502 for die bonding. For example, the mask 570 may be moved such that one or more openings may sweep the radiation exposure area across the carrier structure 514, such as in direction 572. In one embodiment, the mask 570 itself may be movable in direction 572. In one embodiment, relative movement may be generated in part by movement of the carrier structure 514. In some embodiments, both the source 542 and the mask 570 (e.g., one or more openings in the mask 570) can be moved relative to the adhesive of the donor die 502.

[0080] The carrier structure 514 may be at least partially transparent to radiation of the wavelength (or wavelength range) that causes radiation-mediated volume expansion of the adhesive 562. Radiation from the source 542 may penetrate the carrier structure 514 to reach the adhesive 562 on the back side of the donor die 502 in order to cause radiation-mediated release (and bonding) of the donor die 502. The diaphragm 560 may be at least partially opaque to radiation of the wavelength (or wavelength range) that causes radiation-mediated volume expansion of the adhesive 562.

[0081] The carrier structure 514 may include one or more ports (such as one or more ports 552) that can be used to release or expel gases (e.g., gaseous byproducts) generated in the diaphragm 560 due to the expansion of the adhesive 562. The one or more ports 552 may have any suitable geometry, as will be referred to Figure 7Further details are discussed below. One or more ports 552 may be located below each donor die 502, for example, substantially centered below each donor die 502. That is, each donor die 502 may be positioned on the carrier structure 514 such that at least one port 552 is substantially centered on the corresponding donor die 502. One or more ports 552 may or may not extend through the adhesive 562 and / or diaphragm 560. In some embodiments, each donor die 502 may be positioned on the carrier structure such that a plurality of ports 552 correspond to a given donor die 502. In some embodiments, a centrally positioned port may allow most of the gas to escape from the bubble formed in the adhesive 562 in order to release the given donor die 502. In some embodiments, one or more ports 552 may be provided in the carrier structure 514, which help to define the extent of the bubble corresponding to the given donor die 502. These one or more ports 552 may be located around or near one or more edges of the donor die 502 and may limit the expansion of the bubble used to release a given donor die from the carrier structure. One or more donor dies 502 may be positioned on the carrier structure 514 aligned with one or more ports 552.

[0082] Figures 6A to 6D This is a schematic diagram illustrating an exemplary method for die bonding using bubble generation and extraction of gaseous byproducts. Figures 6A to 6D It is a cross-sectional view of the bonding of donor dies (e.g., one or more donor dies 602A-602C) to target dies (e.g., one or more target dies 604A-604C) through the use of bubble generation and byproduct removal or clearing by carrier structure.

[0083] exist Figure 6A In this configuration, one or more donor dies 602A-602C are supported by a carrier structure 614, which can be any suitable carrier structure, such as those previously referenced. Figures 4A to 4C The carrier structure 414 and / or Figure 5 The carrier structure 614 is described above. As previously described, the carrier structure 614 can be completely transparent, partially transparent (e.g., at least 99% transparent, at least 95% transparent, at least 90% transparent, at least 80% transparent, at least 50% transparent, etc.), intermittently transparent (e.g., the region on which the donor die 602 is placed is transparent), etc. The carrier structure 614 can have any properties or be used to perform the previously referenced Figures 1A to 1D The carrier structure 114 (or carrier structure 116). Figures 2A to 2F The carrier structure 214 (or carrier structure 216) Figures 3A to 3JCarrier structure 314, carrier structure 316, carrier structure 314-2 Figures 4A to 4C The carrier structure 414 or Figure 5 The carrier structure 514 describes any function.

[0084] The carrier structure 614 may be coated with adhesive 662. Adhesive 662 may be any suitable adhesive capable of volume expansion upon exposure to appropriate radiation. Adhesive 662 may have any properties or be used to perform the previously referenced Figures 4A to 4C Adhesives 432A-432C and Figure 5 The adhesive 562 may perform any of the functions described. The adhesive 662 may be covered by a diaphragm 660, which may be any suitable flexible diaphragm configured to form one or more bubbles when the adhesive 662 is subjected to appropriate radiation. The diaphragm 660 may have any properties or be used to perform the functions previously described. Figure 5 The diaphragm 560 may perform any of the functions described. One or more donor dies 602A-602C may be adhered to the diaphragm 660 by adhesive 632A-632C. Adhesive 632A-632C may be any suitable expanding adhesive or non-expanding adhesive. Adhesive 632A-632C may have any properties or be used to perform the functions previously described. Figures 4A to 4C Adhesive 432A-432C or Figure 5 Any of the functions described in Adhesive 533 or Adhesive 562.

[0085] Radiation supplied to cause the adhesive 662 to expand can be supplied through the carrier structure 614 by a radiation source (e.g., one or more radiation sources 642A-642C). Figures 6A to 6C The diagram depicts multiple radiation sources 642A-642C to illustrate various embodiments, but in some embodiments, multiple radiation sources may alternatively be a single radiation source. One or more sources 642A-642C can be any suitable radiation source, such as those previously described. In some embodiments, relative movement may exist between the radiation and the adhesive of the donor die 602, for example, relative movement in direction 644, to release the donor die 602 for die bonding. For example, source 642 may sweep radiation across carrier structure 614, for example, in direction 644. In one embodiment, source 642 itself may be movable in direction 644. In one embodiment, source 642 includes optics (not depicted) for inducing relative movement. In one embodiment, relative movement may be generated in part by movement of carrier structure 614.

[0086] Radiation can be provided in a region substantially corresponding to the region to which one or more donor dies (e.g., one or more donor dies 602A-602C) of the carrier structure 614 are attached. (The text then abruptly shifts to a seemingly unrelated topic about radiation.) Figures 6B to 6D Further described, the application of radiation can cause the formation of one or more bubbles due to the volume expansion of the adhesive 662, which are then contained by the diaphragm 660. The carrier structure 614 may have one or more ports (e.g., one or more central ports 652, one or more edge ports 654, one or more tapered ports 656, etc.) configured to facilitate the formation of one or more bubbles for die release (e.g., release of a die from the carrier structure 614), and / or to facilitate the degassing of one or more formed bubbles. In some embodiments, one or more ports in the carrier structure 614 may extend into the adhesive 662 and / or the diaphragm 660. In some embodiments, one or more ports may be created in the carrier structure 614 before one or more donor dies (e.g., one or more donor dies 602A-602C) are placed on the carrier structure 614. In some embodiments, one or more donor dies (e.g., one or more donor dies 602A-602C) may be placed on the carrier structure 614 and aligned with one or more of the ports. In some embodiments, one or more ports may be created in the carrier structure 614 after one or more donor dies (e.g., one or more donor dies 602A-602C) have been placed on the carrier structure. In some embodiments, one or more ports may be created in the carrier structure 614 by aligning with one or more donor dies (e.g., one or more donor dies 602A-602C).

[0087] Figure 6BThe volume expansion of adhesive 662 is depicted. As adhesive 662 is exposed to radiation provided by one or more radiation sources 642A-642C, adhesive 662 can generate gases (e.g., gaseous byproducts), such as gases in one or more bubbles 634A-634C. The size and shape of the bubbles (e.g., bubbles 634A-634C) can depend on the amount and / or location of the applied radiation (e.g., from sources 642A-642B), the configuration of adhesive 662 (e.g., in a continuous layer compared to a patterned layer), and the location and / or configuration of one or more ports (e.g., center port 652, edge port 654, and tapered port 656). For example, by applying radiation from source 642A to a spot focused on or near center port 652, bubble 634A can be formed substantially symmetrically around center port 652. In another example, a bubble 634B can be formed between one or more edge ports 654 by applying a wider radiation spot (e.g., wider than the radiation spot of source 642A) by source 642B. In some embodiments, such as those depicted for bubble 634B, the size of the bubble can be limited by one or more ports (e.g., one or more edge ports 654), or additionally or alternatively by discontinuities in adhesive 662. In yet another example, a bubble 634C can be formed by relative movement between radiation from source 642C and carrier structure 614, for example, in direction 644, thereby producing a bubble 634C expanding toward tapered port 656 in the positive y-direction. Tapered port 656 can be configured to restrict the expansion of bubble 634C in the direction of relative movement between radiation from source 642C and carrier structure 614, or in any other suitable direction.

[0088] In some embodiments, one or more regions containing gas (e.g., one or more bubbles 634A-634C) may be generated at the interface between the adhesive 662 and the carrier structure 614 (e.g., as shown in the figure). Figure 6B (As depicted). In some embodiments, the gas-containing zone may be generated within the adhesive 662, for example at a penetration depth in the adhesive 662 (e.g., measured from the interface between the adhesive 662 and the carrier structure 614). In some embodiments, the gas-containing zone may be generated at the interface between the adhesive 662 and the diaphragm 660. In some embodiments, gas may be generated throughout the adhesive 662, including at substantially equal densities.

[0089] In some embodiments, the volume expansion of adhesive 662 can cause a corresponding expansion of diaphragm 660 (e.g., in regions 672A, 672B, and 672C corresponding to bubbles 634A-634C, respectively) and displacement of the donor dies (e.g., donor dies 602A-602C, respectively). In some embodiments, the volume expansion of adhesive 662 may not release gas into the tool volume (e.g., as previously discussed regarding...). Figures 4A to 4C Within the described tool volume, gas can be contained by deformation of the diaphragm 660. In some embodiments, at least some gas can be removed or escaped from one or more ports (e.g., one or more central ports 652, one or more edge ports 654, and / or one or more tapered ports 656), including during gas formation. In some embodiments, one or more of the ports may be configured, for example, to have nozzles, tapered portions, or other constrictions to help prevent gas from escaping from the one or more ports until a threshold pressure difference is reached. For example, in some embodiments, one or more ports may be substantially closed until a specific volume and / or pressure of gas contained by the diaphragm 660 is reached. In some embodiments, one or more ports may vent or release gas at a rate substantially proportional to the pressure difference between the interior of the bubble and the tool volume.

[0090] Figure 6C The release of one or more donor dies (e.g., one or more donor dies 602A-602C) from diaphragm 660 is depicted. The release of one or more donor dies (e.g., one or more donor dies 602A-602C) allows for the placement of one or more donor dies 602A-602C on corresponding one or more target dies (e.g., one or more target dies 604A-604C) or any other suitable target location. The target die can be any suitable target die, target wafer, etc., as previously described, and the target die can be supported by any suitable carrier structure 616 (such as the carrier structure previously described).

[0091] Figure 6D The removal or purging of gas (e.g., gaseous byproducts) from one or more bubbles 634A-634C is depicted. In some embodiments, the removal or purging of gas may occur simultaneously with the generation of gas, for example, by applying radiation from one or more sources 642A-642C. In some embodiments, one or more donor dies (e.g., [missing information]) may be generated by the expansion of one or more bubbles 634A-634C. Figure 6CGas removal or purging occurs after one or more of the donor dies 602A-602C are released from the diaphragm 660. In some embodiments, even after one or more donor dies have been released, one or more bubbles (e.g., one or more bubbles 634A-634C) may continue to expand, including due to overheating, continued decomposition, etc. In some embodiments, gas may be passively removed or purged from one or more bubbles (e.g., one or more bubbles 634A-634C). In some embodiments, gas may be removed by venting through one or more ports (one or more center ports 652, one or more edge ports 654, and / or one or more tapered ports 656) caused by a pressure differential. The pressure differential may be caused by stress induced in the diaphragm 660 during expansion. In some embodiments, gas may be actively removed from one or more bubbles (e.g., one or more bubbles 634A-634C) by, for example, by applying a vacuum or other applied pressure differential (e.g., negative pressure on top of the carrier structure 614). Although the formation of one or more bubbles (e.g., one or more bubbles 634A-634C) and the release of one or more donor dies (e.g., one or more donor dies 602A-602C) are described as for Figures 6A to 6D The donor dies 602A-602C occur substantially simultaneously, but different donor dies can be released individually, and / or donor dies can undergo different portions of the release and gas extraction operation at different times than another donor dies. For example, a first donor dies can be adhered to the diaphragm 660 in a region of adhesive 662 corresponding to a substantially unexpanded area, while a second donor dies can be simultaneously released from the diaphragm 660 in another region of adhesive 662 corresponding to an area that is expanding or has already expanded, and a third donor dies can be placed on the target die, and the region of the diaphragm 660 to which it was previously adhered can contain air bubbles that are simultaneously being degassed.

[0092] Figure 7 This is a schematic diagram illustrating an exemplary opening for gas extraction. Figure 7 This is a cross-sectional view of a carrier structure (e.g., carrier structure 714) including multiple ports for gas extraction. Carrier structure 714 can be any suitable carrier structure, such as those previously referenced. Figures 4A to 4C The carrier structure 414 Figure 5 The carrier structure 514, and / or Figures 6A to 6DThe carrier structure 614 describes the carrier structure. Port 760 is a port with a constant cross-sectional width (e.g., constant diameter), which can be used to generate a proportional pressure differential across the carrier structure 714. Port 762 is a confined port (which can be used as a nozzle) with a narrow channel 763, which can induce pressure changes within port 762, for example, due to Bernoulli's principle. Port 764 is a wide-mouth port with a tapered opening 765. In some embodiments, the wide-mouth port can be used to hold a reservoir of adhesive (e.g., adhesive 662), which can generate localized forces and / or bubbles when exposed to radiation. Port 766 is a bubble-shaped port with a bubble-like portion 767, which can be used to generate turbulence and keep particles in suspension. Ports 760, 762, 764, and 766 are provided only as examples and any suitable port can be used to vent or release gases (e.g., gaseous byproducts) from the tool volume, from bubbles formed during die joining, or from any other suitable process. Figure 7 In the middle, direction A can be equivalent to Figure 4C , Figure 5 as well as Figures 6A to 6D The negative z-direction in.

[0093] Figure 8 This is a flowchart illustrating an exemplary method of die placement. Each of these operations is described in detail below. The operations of method 800 presented below are intended to be illustrative. In some embodiments, method 600 may be implemented using one or more additional operations not described and / or without one or more of the operations discussed. Furthermore, in Figure 8 The sequence of operations of method 800 illustrated in the figures and described below is not intended to be limiting. In some embodiments, one or more portions of method 800 may be implemented in one or more processing means (e.g., one or more processors). The one or more processing means may include one or more means that perform some or all of the operations of method 800 in response to instructions stored electronically on an electronic storage medium. For example, the one or more processing means may include one or more means configured by hardware, firmware and / or software to be specifically designed to perform one or more operations of method 800.

[0094] As an example, Figure 8 The embodiments described depict die placement for multiple donor dies. Of course, with appropriate modifications, this method can be used to place only a single donor die.

[0095] At operation 810, multiple donor die positions are obtained. The donor die positions can be obtained by measuring one or more positions of the donor die along one or more dimensions. The donor dies may be located on or part of a donor substrate (e.g., a carrier structure, semiconductor substrate, etc.), and the positions of the multiple donor dies can be obtained relative to the donor substrate. The positions of the multiple donor dies can be measured relative to measurement marks. The positions of the multiple donor dies can be measured in a plane (e.g., in the xy plane). The positions of the multiple donor dies can be measured in a plane via a first method and out of plane (e.g., in the Z direction) via a second method. For example, the positions of the multiple donor dies can be measured based on one or more images in a plane. The positions of the multiple donor dies can be obtained from a two-dimensional image showing the positions of the edges or corners of the donor dies relative to the support structure or die actuator. The positions of the multiple donor dies can be obtained based on one or more features (e.g., one or more electroactive regions) on the exposed surface of the donor die. These features, one or more, of the donor die can be used as alignment marks or reference marks. In some embodiments, one or more alignment marks may be included as exposed features of the donor die. One or more alignment marks may be specifically added for die engagement or may be one or more alignment marks corresponding to previous fabrication steps. Multiple donor die positions can be measured or obtained from a storage device.

[0096] At operation 820, one or more target locations are obtained. In one embodiment, the one or more target locations correspond to one or more target dies. The one or more target dies may be located on or a portion of a target substrate (e.g., a carrier structure, a semiconductor substrate, etc.), and the one or more target die locations may be obtained relative to the target substrate. The one or more target die locations may be obtained by any suitable method, including any of the methods described with reference to operation 810.

[0097] At operation 830, a donor die is selected from a plurality of donor dies. Multiple donor dies can be selected for placement on the target die. The donor die can be selected based on position (e.g., along a row, along a column), displacement (e.g., the donor die closest to the desired position), thickness (e.g., a thicker die can be placed before a thinner die, including if the donor dies comprise two or more types of dies), etc. The donor die can have a corresponding target die, such as a target die at a corresponding position on a target substrate (e.g., a target die carrier structure). In some embodiments, the target die can be selected by any suitable method, and the donor die is selected based on the correspondence between the donor die and the selected target die. The donor die and the target die can be placed together such that the donor die and its corresponding target die are separated by a distance that can be traversed by the die placement method. The donor die and the target die can be substantially aligned (e.g., coarse alignment), for example, within a coarse alignment threshold. The donor die and the target die can be held together in an adjacent manner by one or more substrates, chucks, actuators, adhesives, etc.

[0098] At operation 840, the relative position between the selected donor die and the corresponding target die is adjusted to achieve alignment between the donor die and the corresponding target die. Adjustment includes cases where the position is minimally adjusted or substantially unadjusted (e.g., after measurement or reaching adjacency), such as if the measured position corresponds to a target position within a threshold. In one embodiment, the position of the donor die can be adjusted by the action of a die actuator, substrate holder, chuck, etc. The position of the donor die can be adjusted by the action of a substrate handling device. The position of the donor die can be adjusted in one or more directions (e.g., in the XY plane). Instead of or in addition to adjusting the position of the donor die, the position of the target die can be adjusted by any suitable method (e.g., any of the methods previously described). Adjustment of the relative position between the donor die and the target die can include iterative measurements of the donor die position and / or the target die position, including measurements taken as adjustment occurs.

[0099] Adjustment of the donor die position can be based on the alignment position of the donor die. The alignment position can be a target (e.g., a target location) for placing the donor die. For example, a target (e.g., a target location) can be obtained from a measurement of the target die position at operation 820. The target can correspond to the location of the target die. The target can correspond to multiple locations on the target die. The target can be a location (e.g., a location in three dimensions, such as along the X, Y, and Z axes; a location in six directions, such as along the X, Y, and Z axes and relative to rotational angles about these axes, etc.). The target can be a set of locations, such as two or more locations on the target die to which the region of the donor die is to be engaged, or two or more locations on the target die. Additionally or alternatively, adjustment of the target die position can be based on the alignment position of the target die. The alignment position can be a target (e.g., a target location) for placing the donor die. The target (e.g., a target location) can be obtained, for example, at operation 810 based on a measurement of the donor die position. The target can correspond to the location of the donor die. The target can correspond to multiple locations on the donor die.

[0100] At operation 850, the selected donor die is placed on the corresponding target die. The donor die can be placed on the target die by any suitable method, such as by movement of a die actuator, by radiation-mediated bonding, by stamping, by electrostatic attraction, etc. As the donor die contacts the target die, the donor die can undergo alignment, including self-alignment. As the donor die contacts the target die, it can adhere to the target die, for example, by van der Waals forces. In some embodiments, additional donor dies can be placed on the same or different target dies.

[0101] At operation 860, it is determined whether one or more additional donor dies are reserved for placement. If (e.g., on the donor carrier structure) one or more additional donor dies are reserved for placement, the process continues to operation 830, where another donor die is selected. If no additional donor dies are reserved for placement, the process continues to operation 870, where the engagement of multiple dies is completed.

[0102] In one embodiment, when a donor die is placed on a target die, the specific donor die and target die are bonded, for example, through intermolecular bonding. In one embodiment, after the donor die is placed on the target die, the donor die is bonded to the target die, such as through annealing or other bonding processes. In one embodiment, after the bonding of the donor die and target die is completed, the next donor die is placed on the target die. In one embodiment, the bonding of the donor die and target die is completed after multiple donor dies are placed on their respective target dies, for example, after all donor dies on a donor substrate have been placed. In one embodiment, the donor die placed on the target die is annealed to form an electrical connection or enhance the electrical connection. In one embodiment, the next donor die may be placed on the target die after the annealing of the specific donor die and target die is completed. In one embodiment, annealing of the donor and target dies is completed after multiple donor dies have been placed on their respective target dies, for example, after all donor dies on the donor substrate have been placed. The donor dies can remain against the target die during the bonding or annealing period. The donor and target die pair can be released from the substrate or other holding device before or after annealing.

[0103] As described above, method 800 (and / or other methods and systems described herein) is configured for die placement.

[0104] Figure 9 This is a flowchart illustrating an exemplary method for radiation-mediated die release using the extraction of gaseous byproducts. Each of these operations is described in detail below. The operation of method 900 presented below is intended to be illustrative. In some embodiments, method 900 may be implemented using one or more additional operations not described and / or without one or more of the operations discussed. Furthermore, in Figure 9 The sequence of operations of method 900 illustrated in the figures and described below is not intended to be limiting. In some embodiments, one or more portions of method 900 may be implemented in one or more processing means (e.g., one or more processors). The one or more processing means may include one or more means that perform some or all of the operations of method 900 in response to instructions stored electronically on an electronic storage medium. For example, the one or more processing means may include one or more means configured by hardware, firmware and / or software to be specifically designed to perform one or more operations of method 900.

[0105] At operation 910, one or more dies are supplied near the target for die bonding. Operation 910 may include placing one or more dies onto a carrier structure using an adhesive capable of being converted into a gas or otherwise readily expanding in volume. As previously discussed, the one or more dies can be any suitable donor die. The one or more dies may include one or more flexible dies. The carrier structure can be any suitable structure, including structures that are completely or partially transparent to electromagnetic radiation, electron or particle beams, as previously discussed. The carrier structure may be made of a transparent material and / or have open areas to allow radiation to pass through. The carrier structure may have one or more ports through which gas can pass. The adhesive can be any suitable adhesive that can change in volume by applying radiation or radiation-associated heat, such as through phase change, decomposition, precipitation, etc. The adhesive may be covered by a flexible diaphragm (such as a flexible foil or layer) that can operate to accommodate gaseous byproducts of adhesive expansion. The one or more dies can be placed onto the carrier structure by any suitable method (e.g., by a pick-and-place tool, by a cutting tool, etc.).

[0106] Operation 910 may include the alignment of one or more dies with a target. The one or more dies may be aligned with the target based on measurements of the die's position (e.g., relative to the carrier structure, chuck, etc.) and / or the target's position. The one or more dies and the target may be aligned by any suitable method, including any of the methods previously discussed.

[0107] Operation 910 may include bringing one or more dies and a target closer together (e.g., by moving a donor die, by moving a target die, or both). The one or more dies may be within 3 μm of the target, or within 1 μm of the target, or within 500 nm of the target, or within 200 nm of the target, or within 100 nm of the target, or within 50 nm of the target.

[0108] At operation 920, radiation is supplied to the adhesive on one or more aligned dies. The shape of the radiation can be designed to precisely target one die at a time. The size of the radiation spot can be substantially smaller than the size of the die. The radiation can be directed to the central portion of the die, the edge or corner of the die, etc. Relative movement may exist between the radiation and the die, allowing the radiation to move effectively across the die. Radiation can be used to break down the adhesive into at least a gaseous portion. Radiation can cause the formation of bubbles, for example, through the formation of gaseous byproducts of volume expansion due to being trapped between the carrier structure and the flexible diaphragm (e.g., a flexible foil or layer). Radiation can be used to change the adhesive from a solid, gel, or liquid to a gas. Radiation can be used to thermally expand the adhesive. Radiation can change the volume of the adhesive in any suitable manner in an area of ​​the adhesive smaller in area than the die. In some embodiments, radiation can change the volume of the adhesive in an area the same size as or larger than the die. Relative movement may exist between the radiation and the donor die, resulting in expansion of the adhesive in an area corresponding to the path of relative movement. Radiation can be delivered until one or more aligned dies detach from the carrier structure and / or bubble and reach the target.

[0109] At operation 930, the gas generated by the volume expansion of the adhesive is removed or purged. The gas (e.g., gaseous byproducts) can be removed or purged in any suitable manner, such as those methods previously described. The gas can be removed or purged continuously, sequentially (e.g., after the application of radiation that generates the gas), intermittently, etc. In some embodiments, the gas can be removed or purged in a cycle of radiation application (e.g., synchronously). In some embodiments, the gas can be removed or purged asynchronously with the application of radiation, for example, if a threshold level of particles is detected or based on any other suitable detection threshold or target. The gas can be removed or purged by gas flow, by applying reduced pressure (e.g., vacuum), etc. The gas can be removed or purged through one or more ports in the carrier. The gas can be removed or purged by any suitable device, such as through one or more nozzles, one or more ports, one or more pumps, etc., including those devices previously described.

[0110] If one or more dies remain aligned and / or engaged, the process can continue to operation 910, where one or more additional dies can be aligned.

[0111] As described above, method 900 (and / or other methods and systems described herein) is configured for radiation-mediated die release.

[0112] The description herein focuses on embodiments of gas purging or removal of carrier structures 414, 514, and 614. The gas purging or removal devices and / or techniques described herein may be modified as necessary to apply to any other structures, including, for example, but not limited to, structures 114, 214, 314, 116, 216, 316, 416, 516, and 616.

[0113] In one embodiment, the techniques and apparatus described herein can be applied to die-to-die bonding, substrate-to-substrate bonding, die-to-substrate bonding, etc. For example, the techniques and apparatus described herein can be applied to bonding individual donor dies to individual target dies. In one embodiment, the techniques and apparatus described herein can be applied to bonding a group of donor dies to one or more target dies substantially simultaneously, or to bonding a group of target dies to one or more donor dies substantially simultaneously. In one embodiment, the techniques and apparatus described herein can be applied to bonding one or more donor dies to a substrate comprising one or more target dies formed therein or on, or to bonding one or more target dies to a substrate comprising one or more donor dies formed therein or on. In one embodiment, the techniques and apparatus described herein can be applied to bonding a complete substrate or a portion of a substrate comprising donor dies to one or more target dies, or to bonding a complete substrate or a portion of a substrate comprising target dies to one or more donor dies. Therefore, the techniques and apparatus described herein can be applied to virtually every form of die bonding, whether bonding dies individually, bonding dies in groups, bonding dies as part of a complete or partial substrate, etc.

[0114] Other embodiments are disclosed in the following list of numbered entries: 1. A carrier for one or more semiconductor dies, the carrier comprising: A carrier substrate, the carrier substrate including one or more openings; and A flexible diaphragm, configured to temporarily support the one or more semiconductor dies, expands to generate one or more bubbles. The one or more openings are arranged to release the pressure of the one or more bubbles. 2. The carrier according to claim 1 further includes a first adhesive layer, the adhesive of the first layer comprising an adhesive that undergoes local gas expansion upon irradiation to generate the one or more bubbles. 3. The carrier according to item 2 further includes a second adhesive layer configured to hold the one or more semiconductor dies to the flexible diaphragm. 4. The carrier according to any one of the preceding clauses, wherein the one or more bubbles, when generated, correspond to one or more semiconductor dies adhered to the flexible diaphragm, and wherein the generation of the one or more bubbles is configured to enable displacement of the one or more semiconductor dies through the flexible diaphragm. 5. The carrier according to clause 4, wherein each of the one or more bubbles corresponds to one of the one or more semiconductor dies when generated, and wherein the expansion of each of the one or more bubbles causes the corresponding semiconductor die in the one or more semiconductor dies to be released. 6. The carrier according to clause 4 or clause 5, wherein the one or more semiconductor dies comprise a plurality of semiconductor dies and are configured to sequentially release the plurality of semiconductor dies by applying radiation to the carrier in a corresponding region of each of the plurality of semiconductor dies to sequentially generate the one or more bubbles. 7. The carrier according to any one of clauses 4 to 6, wherein radiation is applied to the carrier in a region corresponding to one of the plurality of semiconductor dies, and radiation is blocked to other regions of the carrier. 8. The carrier according to any one of the preceding clauses, wherein the carrier is configured such that the flexible diaphragm can expand to generate the one or more bubbles substantially symmetrically with respect to each of the one or more openings. 9. The carrier according to any one of the preceding clauses, wherein the carrier is configured such that the flexible diaphragm can expand to generate the one or more bubbles substantially symmetrically with respect to a given semiconductor die among the one or more semiconductor dies. 10. The carrier according to any one of the preceding clauses, wherein at least one of the one or more openings corresponds to each of the one or more semiconductor dies. 11. The carrier according to any one of the preceding clauses, wherein each of the one or more bubbles corresponds to at least one of the one or more openings when generated. 12. The carrier according to any one of the preceding clauses, wherein the bubble in the one or more bubbles expands substantially symmetrically about the opening of the one or more openings that are centrally positioned relative to the bubble when generated. 13. The carrier according to any one of the preceding clauses, wherein the bubbles in the one or more bubbles expand substantially symmetrically around a given semiconductor die in the one or more semiconductor dies when generated. 14. The carrier according to any one of the preceding clauses, the carrier further comprising a mask configured to block radiation from the carrier in at least some regions. 15. The carrier according to any one of the preceding clauses, wherein the first opening of the one or more openings is arranged to release gas from an associated bubble in the one or more bubbles to allow the associated bubble to expand and / or contract asymmetrically with respect to the opening. 16. The carrier according to clause 15, wherein when the associated bubble is generated, the first opening is offset relative to the central portion of the associated bubble. 17. The carrier according to any one of the preceding clauses, wherein the second opening of the one or more openings is arranged to release gas from an associated bubble in the one or more bubbles to allow the associated bubble to expand and / or contract substantially symmetrically with respect to the second opening. 18. The carrier according to clause 17, wherein when the associated bubble is generated, the second opening is substantially centered relative to the associated bubble. 19. The carrier according to any one of the preceding clauses, wherein the size and / or cross-sectional profile of one of the one or more openings is configured to limit the contraction rate of the associated bubble in the one or more bubbles. 20. The carrier according to any one of the preceding clauses, wherein the delivery of the one or more semiconductor dies in a direction perpendicular to the carrier and arranged to hold the surfaces of the one or more semiconductor dies is substantially performed by the expansion of the one or more bubbles. 21. The carrier according to any one of the preceding clauses, the carrier is further configured to place the one or more semiconductor dies at one or more acceptor locations by the expansion of the one or more bubbles. 22. The carrier according to any one of the preceding clauses, the carrier is further configured to place the one or more semiconductor dies at one or more receptor sites by means of the expansion of the one or more bubbles through light-induced forward transfer. 23. A system for die manipulation, the system comprising: Structure, the structure being configured to hold a semiconductor die; A radiation output section, the radiation output section being configured to provide radiation toward the die; A processor system configured to provide sufficient radiation to or near the die to transfer the die toward a receptor location by gas expansion, such that the transferred die engages with the receptor location; and A gas extraction module configured to extract the product of the gas expansion. 24. The system according to clause 23, wherein the gas extraction module is configured to extract gas from the structure configured to hold the semiconductor die between the structure and the acceptor location. 25. The system according to clause 23 or clause 24, wherein the gas extraction module is configured to provide reduced pressure and / or airflow to remove gas. 26. The system according to any one of claims 23 to 25, wherein the gas extraction module is configured to extract gas through the structure configured to hold the semiconductor die. 27. The system according to any one of clauses 23 to 26, wherein the structure configured to hold the semiconductor die includes one or more openings configured for extracting gas. 28. A system according to any one of clauses 23 to 27, wherein the structure configured to hold the semiconductor die is a carrier according to any one of clauses 1 to 22. 29. The system according to clause 27 or clause 28, wherein the processor system is further configured to align the semiconductor die with an opening in one or more of the openings in the structure. 30. The system according to any one of clauses 27 to 29, wherein the processor system is further configured to align the one or more openings of the structure with the receptor location. 31. The system according to any one of clauses 27 to 30, wherein the processor system is further configured to align the semiconductor die with the receptor position. 32. A method comprising: Radiation is applied to or near a semiconductor die to cause the die to shift toward a acceptor location, wherein the application of the radiation causes the release of one or more gaseous byproducts; and The gaseous byproducts are removed from the area near the core using a gas extraction system. 33. The method according to clause 32 further includes: aligning the semiconductor die with the receptor position. 34. The method according to claim 32 or 33 further comprises: aligning the semiconductor die with an opening in a carrier structure holding the die, the opening being configured to remove the gaseous byproduct. 35. The method according to clause 34, wherein aligning the semiconductor die with the receptor position comprises: aligning the opening in the carrier structure with the receptor position. 36. A system comprising: The carrier according to any one of clauses 1 to 22; and A die-bonding system configured to position a carrier structure relative to one or more receptor locations and to supply radiation to cause the one or more bubbles to expand. 37. A system for die bonding, the system comprising a carrier structure according to any one of claims 1 to 22. 38. One or more non-transitory machine-readable media having instructions therein, the instructions being configured, when executed by a processor system, to cause the processor system to perform at least the method according to any one of clauses 32 to 35.

[0115] Figure 10 This is a schematic diagram of an exemplary computer system CS that can be used to implement one or more of the operations described herein. The computer system CS includes a bus BS or other communication mechanism for communicating information, and a processor PRO (or multiple processors) coupled to the bus BS for processing information. The computer system CS also includes main memory MM (such as random access memory (RAM)) or other dynamic storage device coupled to the bus BS for storing instructions and information to be executed by the processor PRO. The main memory MM may also be used to store temporary variables or other intermediate information during instruction execution by the processor PRO. The computer system CS also includes read-only memory (ROM) or other static storage device coupled to the bus BS for storing static information and instructions for the processor PRO. A storage device SD, such as a disk or optical disk, is provided and coupled to the bus BS for storing information and instructions.

[0116] A computer system CS can be coupled via a bus BS to a display DS for displaying information to the computer user, such as a cathode ray tube (CRT), flat panel display, or touchpad display. Input devices ID, including alphanumeric keys and other buttons, are coupled to the bus BS for communicating information and command selections to the processor PRO. Another type of user input device is a cursor controller CC, such as a mouse, trackball, or cursor direction buttons, used to communicate directional information and command selections to the processor PRO and to control cursor movement on the display DS. Such input devices typically have two degrees of freedom on two axes (i.e., a first axis (e.g., x) and a second axis (e.g., y)), allowing the device to specify its position in a plane. Touchpad (screen) displays can also be used as input devices.

[0117] In some embodiments, a portion of one or more methods as described herein may be executed by a computer system CS in response to a processor PRO executing one or more sequences of one or more instructions included in main memory MM. These instructions may be read from another computer-readable medium, such as a storage device SD, into main memory MM. Execution of the instruction sequence included in main memory MM causes the processor PRO to perform one or more process steps (operations) described herein. One or more processors arranged in a multiprocessor configuration may also be employed to execute the instruction sequence included in main memory MM. In some embodiments, a hard-wired circuit system may be used instead of or in combination with software instructions. Therefore, the description herein is not limited to any particular combination of hardware circuitry and software.

[0118] As used herein, the terms “computer-readable medium” and / or “machine-readable medium” refer to any medium that participates in providing instructions to a processor (PRO) for execution. Such media can take many forms, including but not limited to non-volatile media, volatile media, and transmission media. Non-volatile media include, for example, optical discs or magnetic disks, such as storage devices (SDs). Volatile media include dynamic memory, such as main memory (MMs). Transmission media include coaxial cables, copper wires, and optical fibers, including wires comprising a bus (BS). Transmission media can also take the form of sound waves or radiated waves, such as sound waves or light waves generated during radio frequency (RF) and infrared (IR) data communications. Computer-readable media can be non-transitory, such as floppy disks, floppy disks, hard disks, magnetic tape, any other magnetic media, CD-ROMs, DVDs, any other optical media, punched cards, paper tape, any other physical media with a perforated pattern, RAM, PROMs and EPROMs, FLASH-EPROMs, any other memory chips or cartridges. Non-transitory computer-readable media may have instructions recorded thereon. When executed by a computer, the instructions can perform any of the operations described herein. For example, a temporary computer-readable medium may include a carrier wave or other medium that propagates electromagnetic signals.

[0119] Various forms of computer-readable media can be used to carry one or more sequences of one or more instructions to the processor PRO for execution. For example, the instructions can initially be carried on the disk of a remote computer. The remote computer can load the instructions into its dynamic memory and transmit them over a telephone line using a modem. A modem local to the computer system CS can receive data over the telephone line and convert the data into an infrared signal using an infrared transmitter. An infrared detector coupled to the bus BS can receive the data carried in the infrared signal and place the data on the bus BS. The bus BS carries the data to the main memory MM, and the processor PRO retrieves and executes the instructions from the main memory MM. The instructions received by the main memory MM can optionally be stored on the storage device SD before or after execution by the processor PRO.

[0120] The computer system CS may also include a communication interface CI coupled to the bus BS. The communication interface CI provides bidirectional data communication coupling with a network link NDL connected to a local area network (LAN). For example, the communication interface CI may be an Integrated Services Digital Network (ISDN) card or a modem to provide data communication connectivity to a corresponding type of telephone line. As another example, the communication interface CI may be a LAN card to provide data communication connectivity to a compatible LAN. Wireless links may also be implemented. In any such implementation, the communication interface CI transmits and receives electrical, electromagnetic, or optical signals carrying digital data streams representing various types of information.

[0121] A network link (NDL) typically provides data communication to other data devices via one or more networks. For example, a network link NDL can provide a connection to a host computer (HC) via a local area network (LAN). This can include data communication services provided via a global packet data communication network (now commonly referred to as the "Internet" INT). A LAN (Internet) can use electrical, electromagnetic, or optical signals to carry digital data streams. Signals passing through various networks and signals on the network data link (NDL) and through the communication interface (CI) (which carries digital data to and from the computer system (CS)) are example forms of carriers for transmitting information.

[0122] A computer system CS can send messages and receive data, including process code, via a network, network data link (NDL), and communication interface (CI). In the Internet example, a host computer HC can transmit requested code for an application via the Internet (INT), network data link (NDL), local area network (LAN), and communication interface (CI). For example, such a downloadable application can provide all or part of the methods described herein. The received code can be executed by the processor PRO upon reception and / or stored in storage device SD or other non-volatile storage device for later execution. In this way, the computer system CS can obtain application code in carrier form.

[0123] While the concepts disclosed herein can be used to manufacture substrates (such as silicon wafers), it should be understood that the disclosed concepts can be used in any type of manufacturing system (e.g., a manufacturing system for manufacturing on substrates other than silicon wafers).

[0124] Furthermore, combinations and sub-combinations of the disclosed elements may include individual embodiments. For example, one or more of the above operations may be included in a separate embodiment, or they may be included together in the same embodiment.

[0125] The above description is intended to be illustrative and not restrictive. Therefore, it will be apparent to those skilled in the art that modifications can be made to the description without departing from the scope of the claims set forth below.

Claims

1. A carrier for one or more semiconductor dies, the carrier comprising: A carrier substrate, the carrier substrate including one or more openings; and A flexible diaphragm, configured to temporarily support the one or more semiconductor dies, expands to generate one or more bubbles. The one or more openings are arranged to release the pressure of the one or more bubbles.

2. The carrier according to claim 1, the carrier further comprising a first adhesive layer, the adhesive of the first layer comprising an adhesive that undergoes local gas expansion upon irradiation to generate the one or more bubbles.

3. The carrier of claim 2, further comprising a second adhesive layer configured to hold the one or more semiconductor dies to the flexible diaphragm.

4. The carrier of claim 1, wherein the one or more bubbles, when generated, correspond to one or more semiconductor dies adhered to the flexible diaphragm, and wherein the generation of the one or more bubbles is configured to enable displacement of the one or more semiconductor dies through the flexible diaphragm.

5. The carrier of claim 4, wherein each of the one or more bubbles corresponds to one of the one or more semiconductor dies when generated, and wherein the expansion of each of the one or more bubbles causes the corresponding semiconductor die in the one or more semiconductor dies to be released.

6. The carrier of claim 4, wherein the one or more semiconductor dies comprise a plurality of semiconductor dies and are configured to sequentially release the plurality of semiconductor dies by applying radiation to the carrier in a region corresponding to each of the plurality of semiconductor dies to sequentially generate the one or more bubbles.

7. The carrier according to claim 4, wherein radiation is applied to the carrier in a region corresponding to one of the plurality of semiconductor dies, and radiation is blocked in other regions of the carrier.

8. The carrier according to claim 1, wherein at least one of the one or more openings corresponds to each of the one or more semiconductor dies.

9. The carrier according to claim 1, further comprising a mask configured to block radiation from the carrier in at least some regions.

10. The carrier of claim 1, wherein the size and / or cross-sectional profile of one of the one or more openings is configured to limit the contraction rate of the associated bubble in the one or more bubbles.

11. The carrier of claim 1, wherein the delivery of the one or more semiconductor dies in a direction perpendicular to the carrier and arranged to hold the surfaces of the one or more semiconductor dies is substantially performed by the expansion of the one or more bubbles.

12. The carrier of claim 1, further configured to place the one or more semiconductor dies at one or more acceptor sites by means of the expansion of the one or more bubbles.

13. A system for die manipulation, the system comprising: A structure configured to hold a semiconductor die; A radiation output section, the radiation output section being configured to provide radiation toward the die; A processor system configured to provide radiation to or near the die to transfer the die toward a receptor location by gas expansion, such that the transferred die engages with the receptor location. and A gas extraction module configured to extract the product of the gas expansion.

14. A method comprising: Radiation is applied to or near a semiconductor die to cause the die to move toward a acceptor location, wherein the application of the radiation causes one or more gaseous byproducts to be released; as well as The gaseous byproducts are removed from the area near the core using a gas extraction system.

15. A system comprising: The carrier according to claim 1; and A die-bonding system configured to position a carrier structure relative to one or more receptor locations and to supply radiation to cause the one or more bubbles to expand.

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