Semiconductor manufacturing apparatus component

Abstract

A semiconductor manufacturing apparatus component that helps suppress discharge occurring between a wafer and a ceramic substrate is provided. A semiconductor manufacturing apparatus component includes a ceramic substrate having an upper surface and a lower surface on which a wafer is loaded, a plug arrangement hole that penetrates the ceramic substrate in the up-down direction, and a plug that is implanted in the plug arrangement hole, characterized in that the plug is composed of a dense body having an upper end surface that is exposed on the upper surface side, a lower end surface that is exposed on the lower surface side, and a gas flow path that extends through the inside of the dense body from an upper end opening provided in the upper end surface to a lower end opening provided in the lower end surface, and a reinforcing rib that divides the upper end opening into multiple sections is provided in the gas flow path.

Description

Technical Field

[0001] This invention relates to components for semiconductor manufacturing apparatus. Background Technology

[0002] Previously, components for semiconductor manufacturing apparatuses used for holding, temperature control, and transporting wafers were known. These components for semiconductor manufacturing apparatuses are also called wafer stage, electrostatic chuck, base, etc. They typically have the function of applying electrostatic attraction power to built-in electrodes to attract wafers using electrostatic force. They are also known to have the function of controlling the temperature of wafers by allowing gas to flow between the wafer placement surface and the object to be attracted, i.e., the wafer.

[0003] As a component for a semiconductor manufacturing apparatus, for example, a component for a semiconductor manufacturing apparatus is known to include: a ceramic substrate having an upper surface for placing a wafer; a gas passage extending through the ceramic substrate in a vertical direction; and a conductive base plate bonded to the lower surface of the ceramic substrate. During wafer processing, cooling gases such as helium are introduced to the back side of the wafer through the gas passage.

[0004] In semiconductor manufacturing equipment components like these, a large potential difference sometimes arises between the component and the wafer, which can lead to discharge (insulation breakdown) between the wafer and the substrate via the gas passage. Therefore, various techniques for placing plugs in the gas passage have been explored to suppress this discharge. These plugs are mostly made of porous materials. Without plugs, for example, the application of an RF voltage can cause gas molecules to ionize, and the resulting electrons accelerate and collide with other gas molecules, leading to glow discharge or even arc discharge. However, with plugs present, electrons encounter the plugs before colliding with other gas molecules, thus suppressing the discharge.

[0005] Patent Document 1 discloses a plug having a gas flow path that bends through a dense body portion along its thickness direction. Furthermore, it proposes that at least a portion of the gas flow path portion be made of an insulating and permeable porous material.

[0006] Patent Document 2 discloses an electrostatic chuck, characterized by comprising: a ceramic dielectric substrate having a first main surface for holding an adsorbed object and a second main surface opposite to the first main surface; a base plate supporting the ceramic dielectric substrate and having a gas inlet path; and a first porous portion disposed between the base plate and the first main surface of the ceramic dielectric substrate, and disposed opposite to the gas inlet path, wherein the ceramic dielectric substrate has a first hole located between the first main surface and the first porous portion, the first porous portion comprising: a porous portion having multiple holes, and a first dense portion being denser than the porous portion, and configured such that when projected onto a plane perpendicular to a first direction from the base plate toward the ceramic dielectric substrate, the first dense portion and the first hole overlap, while the porous portion and the first hole do not overlap.

[0007] Patent document 3 describes an electrostatic chuck, characterized by comprising: a ceramic dielectric substrate having a first main surface for holding an adsorbed object and a second main surface opposite to the first main surface; a base plate supporting the ceramic dielectric substrate and having a gas inlet path; and a first porous portion disposed between the base plate and the first main surface of the ceramic dielectric substrate, and positioned opposite the gas inlet path. The first porous portion comprises: a plurality of sparse portions having a plurality of pores, and a dense portion having a density higher than that of the sparse portions. The plurality of sparse portions extend along a first direction from the base plate toward the ceramic dielectric substrate, and the dense portions are located between the plurality of sparse portions. The sparse portions have walls disposed between the pores, and in a second direction substantially orthogonal to the first direction, the minimum size of the wall is smaller than the minimum size of the dense portion.

[0008] Patent document 4 describes an invention that aims to provide a holding device capable of reducing the occurrence of abnormal discharges and controlling the temperature of an object with high precision. Specifically, a holding device is described, comprising: a ceramic substrate having a first surface for holding an object and a second surface located opposite to the first surface; a base member disposed on the second surface side of the ceramic substrate and having a third surface located opposite to the ceramic substrate; and a bonding material disposed between the ceramic substrate and the base member, (1) forming a flow path in the ceramic substrate and the base member that allows fluid movement between an outflow hole provided on the first surface and an inflow hole provided on the third surface, or (2) forming a flow path in the ceramic substrate that allows fluid movement between an outflow hole provided on the first surface and an inflow hole provided on the second surface, wherein a porous ceramic region is provided in the flow path, the porous ceramic region having a sparse region and a dense region, the dense region having a lower porosity than the sparse region and being disposed closer to the first surface side than the sparse region.

[0009] Patent document 5 describes a wafer stage comprising: an insulating first porous portion disposed within a through-hole in a ceramic plate; and an insulating second porous portion embedded in a recess on the ceramic plate side of a base plate, opposite to the first porous portion. Gas supplied to the gas inlet path flows through the second porous portion and the first porous portion into the space between the wafer mounting surface and the wafer for cooling the object. The document states that the presence of the first and second porous portions ensures sufficient gas flow from the gas inlet path to the wafer mounting surface and suppresses discharge (arc discharge) caused by plasma during wafer processing.

[0010] Existing technical documents

[0011] Patent documents

[0012] Patent Document 1: Japanese Patent Application Publication No. 2022-119338

[0013] Patent Document 2: Japanese Patent Application Publication No. 2022-31333

[0014] Patent Document 3: Japanese Patent Application Publication No. 2019-165194

[0015] Patent Document 4: Japanese Patent Application Publication No. 2022-176701

[0016] Patent Document 5: Japanese Patent Application Publication No. 2020-72262 Summary of the Invention

[0017] In semiconductor manufacturing equipment components, various techniques have been proposed to improve the structure near the plug of the gas passage section that runs vertically through the ceramic substrate in order to suppress discharges occurring between the wafer and the substrate. However, discharges are prone to occur in high-power plasma wafer processing such as deep etching. Therefore, there is a need for discharge countermeasures with a higher level of efficiency than before.

[0018] Therefore, there is a desire to develop new discharge suppression technologies. Further improvements in discharge suppression effects can be expected by combining such new discharge suppression technologies with conventional discharge suppression technologies. Therefore, the objective of this invention is to provide, in one embodiment, a component for a semiconductor manufacturing apparatus employing a discharge suppression technology different from conventional ones.

[0019] In order to solve the above-mentioned problems, the inventors of this invention have conducted in-depth research and created the invention as illustrated below.

[0020] [Option 1]

[0021] A component for a semiconductor manufacturing apparatus includes: a ceramic substrate having an upper surface and a lower surface for placing a wafer; a plug mounting hole extending through the ceramic substrate in a vertical direction; and a plug inserted into the plug mounting hole.

[0022] The component for the semiconductor manufacturing apparatus is characterized in that...

[0023] The plug is made of a compact body and has: an upper end face exposed on the upper surface side; a lower end face exposed on the lower surface side; and a gas flow path extending from an upper opening on the upper end face through the interior of the compact body to a lower opening on the lower end face.

[0024] The gas flow path is provided with reinforcing ribs that divide the upper opening into multiple sections.

[0025] [Option 2]

[0026] The component for a semiconductor manufacturing apparatus according to Scheme 1 is characterized in that,

[0027] The number of reinforcing ribs provided in one of the gas flow paths is 1 to 5.

[0028] [Option 3]

[0029] The component for a semiconductor manufacturing apparatus according to embodiment 1 or 2 is characterized in that,

[0030] Assuming the absence of the reinforcing rib, the major diameter X of the upper opening is... max It is 0.1mm or more.

[0031] [Option 4]

[0032] The component for a semiconductor manufacturing apparatus according to any one of claims 1 to 3 is characterized in that,

[0033] Regarding each of the plurality of sections with the upper opening, the major diameter Y of that section... max and the minor axis Y of this section min Satisfying 0.1≤Y min / Y max Relationships ≤0.9.

[0034] [Option 5]

[0035] The component for a semiconductor manufacturing apparatus according to embodiment 4 is characterized in that...

[0036] Y max It is 0.01 to 0.5 mm.

[0037] [Option 6]

[0038] The component for a semiconductor manufacturing apparatus according to any one of claims 1 to 5 is characterized in that,

[0039] When a coordinate axis is taken in the vertical direction, and the coordinate value at the upper end face of the plug is set to 0 and the coordinate value at the lower end face is set to H, the reinforcing rib is provided in the direction of the gas flow path extension at least in the range of coordinate values ​​from 0 to 0.05×H.

[0040] [Option 7]

[0041] The component for a semiconductor manufacturing apparatus according to embodiment 6 is characterized in that,

[0042] The reinforcing ribs were not provided at least in the range of coordinate values ​​exceeding 0.2×H and below 1.0×H.

[0043] [Option 8]

[0044] The component for a semiconductor manufacturing apparatus according to any one of claims 1 to 7 is characterized in that,

[0045] In the cross section of the plug that passes through the central axis and extends in the vertical direction, the gas flow path has a flat cross-sectional shape with a height D in the vertical direction and a width W in the horizontal direction satisfying the relationship 0.1≤D / W≤0.9, assuming that the reinforcing rib is not present.

[0046] [Option 9]

[0047] The component for a semiconductor manufacturing apparatus according to embodiment 8 is characterized in that,

[0048] The height D is 10–300 μm.

[0049] [Option 10]

[0050] The component for a semiconductor manufacturing apparatus according to any one of claims 1 to 9 is characterized in that,

[0051] The fracture toughness (KIC) of the dense body portion of the plug is greater than that of the ceramic substrate.

[0052] Invention Effects

[0053] A component for a semiconductor manufacturing apparatus according to one embodiment of the present invention is effective in suppressing discharges that occur between a wafer and a ceramic substrate. Attached Figure Description

[0054] Figure 1-1 is a schematic longitudinal cross-sectional view of a component for a semiconductor manufacturing apparatus according to one embodiment of the present invention.

[0055] Figures 1-2 are schematic longitudinal cross-sectional views of a plug provided in a component of a semiconductor manufacturing apparatus according to one embodiment of the present invention, passing through the central axis (when there is one gas flow path).

[0056] Figures 1-3 are schematic top views of the plugs included in a component of a semiconductor manufacturing apparatus according to one embodiment of the present invention (when there are four gas flow paths).

[0057] Figures 1-4 are schematic top views of the ceramic substrate included in a component of a semiconductor manufacturing apparatus according to the first embodiment of the present invention.

[0058] Figure 2 This is a schematic longitudinal cross-sectional view of a component for a semiconductor manufacturing apparatus according to another embodiment of the present invention.

[0059] Figure 3 This is a manufacturing process diagram of a component for a semiconductor manufacturing apparatus according to one embodiment of the present invention. Detailed Implementation

[0060] Next, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention is not limited to the following embodiments, and it should be understood that appropriate modifications and improvements can be made based on the ordinary knowledge of those skilled in the art without departing from the spirit of the invention. Furthermore, in this specification, "upper" and "lower" conveniently indicate the relative positional relationship when the upper surface of the ceramic substrate for wafer placement is facing upwards and the components of the semiconductor manufacturing apparatus are placed on a horizontal plane, and do not indicate an absolute positional relationship. Therefore, depending on the orientation of the components of the semiconductor manufacturing apparatus, "upper" and "lower" can become "lower" and "upper," "left" and "right," or "front" and "rear."

[0061] <1. Composition of Components in Semiconductor Manufacturing Equipment>

[0062] Referring to FIG1-1, the semiconductor manufacturing apparatus component 10 of the first embodiment of the present invention includes: a ceramic substrate 20 having an upper surface 21 for placing a wafer W and a lower surface 23 opposite to the upper surface 21; a plug placement hole 50 extending through the ceramic substrate 20 in a vertical direction; and a plug 55 inserted into the plug placement hole 50. Additionally, the semiconductor manufacturing apparatus component 10 includes: a base plate 30 bonded to the lower surface 23 of the ceramic substrate 20 by means of a bonding layer 40; and a gas supply passage 60 passing through the base plate 30 and the bonding layer 40 for supplying gas to the plug 55.

[0063] (1-1. Ceramic substrate)

[0064] The upper surface 21 of the ceramic substrate 20 has a wafer mounting surface for mounting the wafer W. Additionally, the ceramic substrate 20 contains an electrode 22. As shown in Figures 1-1 and 1-4, an annular sealing strip 21a is formed along the outer edge of the upper surface 21 of the ceramic substrate 20, and a plurality of protrusions 21b are formed on the entire inner surface of the sealing strip 21a. The shape of the protrusions 21b is not limited; for example, they can be cylinders, prisms, etc. The sealing strip 21a and the protrusions 21b are preferably of the same height, for example, 5 to 100 μm, typically 10 to 30 μm. The electrode 22 is a planar electrode used as an electrostatic electrode and is connected to an external DC power supply via a power supply component (not shown). A low-pass filter may be disposed midway through the power supply component. The power supply component is electrically insulated from the bonding layer 40 and the substrate 30. When a DC voltage is applied to electrode 22, the wafer W is attracted and fixed to the wafer mounting surface (specifically, the upper surface of the sealing strip 21a and the upper surface of the protrusion 21b) by electrostatic attraction. When the DC voltage is removed, the wafer W is released from its attraction and fixation on the wafer mounting surface. It should be noted that the portion of the upper surface 21 of the ceramic substrate 20 without the sealing strip 21a and protrusion 21b is referred to as the reference surface 21c.

[0065] As electrode 22, a heater electrode (resistive heating element) can be built in place instead of an electrostatic electrode or other than an electrostatic electrode. In this case, the heater power supply is connected to the heater electrode. The ceramic substrate 20 can have one layer of electrodes built in, or two or more layers of electrodes can be built in with open intervals.

[0066] The ceramic substrate 20 can be a circular plate (e.g., 300-400 mm in diameter) made of ceramic, such as alumina sintered body or aluminum nitride sintered body. The thickness of the ceramic substrate 20 is not limited, but from the viewpoint of improving the fixing strength of the plug 55, the thickness from the upper opening 50a to the lower opening 50b is preferably 1 mm or more. Furthermore, from the viewpoint of reducing heat transfer of the ceramic substrate 20 and reducing manufacturing costs, this thickness is preferably 5 mm or less, more preferably 3 mm or less, and even more preferably 2 mm or less. Therefore, regarding the thickness from the upper opening 50a to the lower opening 50b, for example, the thickness is preferably 1-5 mm, more preferably 1-3 mm, and even more preferably 1-2 mm. Here, the thickness from the upper opening 50a to the lower opening 50b refers to the distance from the center of gravity of the upper opening 50a to the center of gravity of the lower opening 50b. The height of the upper opening 50a is equal to the height of the reference surface 21c of the upper surface 21 of the ceramic substrate 20. The height of the lower opening 50b is equal to the height of the lower surface 23 of the ceramic substrate 20.

[0067] (1-2. Insertion hole)

[0068] The plug configuration hole 50 is, as shown in Figure 1-1, a hole that penetrates the ceramic substrate 20 in a vertical direction from the upper opening 50a to the lower opening 50b. The plug configuration hole 50 functions as a gas passage from the lower surface 23 of the ceramic substrate 20 to the reference surface 21c of the upper surface 21. One plug configuration hole 50 may be provided, however, multiple holes are preferred. Figure 1-4 shows multiple plug configuration holes 50 (here, six) with a plug 55 inserted into each hole.

[0069] The horizontal opening diameter of the plug placement hole 50 (referring to the equivalent circle diameter if the cross-section of the plug placement hole is not circular) is not limited. For example, it can be in the range of 1 to 5 mm at any height, typically in the range of 3 to 4 mm. The diameter of the plug placement hole 50 can be constant or varied from the lower surface 23 to the upper surface 21 of the ceramic substrate 20. In one embodiment, the diameter of the plug placement hole 50 narrows from top to bottom, and it can have a conical inner circumferential surface 50c with an area of ​​upper opening 50a larger than the area of ​​lower opening 50b. Having such a conical inner circumferential surface 50c in the plug placement hole 50 results in the following effect: when the plug 55 is inserted into the plug placement hole 50, the plug 55 easily stops at a predetermined height position in the plug placement hole 50; therefore, the plug 5 can be inserted into the plug placement hole 50 with high positioning accuracy. Furthermore, the plug 55 is difficult to detach downwards but relatively easy to detach upwards, thus facilitating plug replacement. Additionally, the increased surface distance also suppresses discharge. The plug placement hole 50 can have, for example, a frustum-shaped or truncated pyramidal space.

[0070] From the viewpoint of improving the fixing strength of the plug 55 and ensuring sufficient space for the surrounding electrodes by preventing the plug 55 from becoming too large, the inclination angle α of the inner peripheral surface 50c of the plug placement hole 50 relative to the lower opening 50b is preferably 70° or more, more preferably 75° or more. Furthermore, from the viewpoint of improving the positioning accuracy of the plug in the height direction when the plug 55 is pressed downward into the plug placement hole 50, facilitating the replacement of the plug 55, and suppressing discharge by increasing the surface distance, the inclination angle α is preferably 87° or less, more preferably 85° or less. Therefore, the inclination angle α is preferably, for example, 70° to 87°, more preferably 75° to 85°.

[0071] (1-3. Insertion)

[0072] A plug 55 is inserted into the plug configuration hole 50. Figure 1-2 shows a schematic longitudinal cross-sectional view of the plug 55 through the central axis (when there is one gas flow path). Figure 1-3 shows a schematic top view of the plug 55 (when there are four gas flow paths). The plug 55 is composed of a compact body 55c and has: an upper end face 55a exposed on the upper surface 21 side of the ceramic substrate 20; a lower end face 55b exposed on the lower surface 23 side of the ceramic substrate 20; and a gas flow path 55d extending from the upper end opening 55a1 provided on the upper end face 55a through the interior of the compact body 55c to the lower end opening 55b1 provided on the lower end face 55b.

[0073] In this specification, dense body 55c refers to the portion of the plug 55 with a porosity of 5% or less. The local porosity of the plug 55 is determined using the following method. First, the plug 55 is cut in such a way that a section passing through its central axis extending in the vertical direction is exposed. Next, a scanning electron microscope (SEM) is used at 3000x magnification at a depth of 2200 μm. 2 The porosity of the target area in the cross-section is observed from both sides, and the area ratio of the pores identified in that area is calculated. Specifically, the SEM image is analyzed, and a threshold is determined using discriminant analysis (Otsu's binarization) based on the brightness distribution of the pixel brightness data in the image. Then, based on the determined threshold, each pixel in the image is binarized into the object portion and the pore portion, and the area of ​​the object portion and the area of ​​the pore portion are calculated. Finally, the ratio of the area of ​​the pore portion to the total area (the combined area of ​​the object portion and the pore portion) is calculated and set as the porosity of the target area.

[0074] In one embodiment, gas flowing in from the lower opening 55b1 on the lower end face 55b of the plug 55 can flow through a gas flow path 55d provided inside the compact body 55c and exit from the upper opening 55a1 on the upper end face 55a of the plug 55. A plug 55 may have only one gas flow path 55d or more. For the sake of ensuring gas flow, a plug 55 preferably has 2 to 9 gas flow paths 55d, more preferably 6 to 9. Figure 1-2 shows one gas flow path 55d for simplicity. Figure 1-3 shows the upper openings 55a1 of the outlets of the four gas flow paths 55d. The gas flow path 55d can be formed by any of a straight line, a curve, or a combination of both. From the viewpoint of suppressing discharge, it is preferred to have a shape where the flow path length is longer than the vertical length of the plug 55, such as a spiral or sawtooth shape.

[0075] The gas flow path 55d can be void, as long as it allows gas flow, and at least a portion of it can be porous. When at least a portion of the gas flow path 55d is porous, gas flowing in from the lower opening 55b1 of the plug 55 flows through the gas flow path 55d, which is formed by a continuous number of fine pores, and flows out from the upper opening 55a1 of the plug 55. The outflowing gas is supplied between the wafer W and the ceramic substrate 20. Because the three-dimensional (e.g., three-dimensional network) continuous pores present in the porous material form the gas flow path, the actual flow path length within the gas flow path 55d is longer compared to the case where the gas flow path 55d is void, resulting in a less likely discharge effect. One or more gas flow paths can also be further formed within the porous gas flow path.

[0076] Therefore, the gas flow path 55d can be either void or porous. Preferably, at least a portion of the gas flow path 55d is porous. A void gas flow path 55d means that its porosity is 100%. A porous gas flow path 55d means that its porosity exceeds 5% but is less than 100%. In the case of a porous gas flow path 55d, to reduce ventilation resistance, a higher porosity is preferable. Therefore, the porosity of the gas flow path 55d is preferably 10% or more, more preferably 40% or more. On the other hand, to increase the flow path length of the plug 55 or to ensure structural strength, the porosity of the gas flow path 55d is preferably 50% or less. Therefore, the porosity of the gas flow path 55d is preferably, for example, 10% or more and 50% or less, more preferably 40% or more and 50% or less. The porosity of the gas flow path 55d was determined using the mercury injection method (JISR1655:2003).

[0077] During wafer processing, gas molecules between the wafer W and the ceramic substrate 20 may sometimes ionize. The resulting electrons are accelerated toward the ceramic substrate 20 and collide with the upper surface 21 of the ceramic substrate 20. Because the gas velocity increases after the collision, it is easier for discharge to occur. Therefore, shortening the distance between the wafer W and the ceramic substrate 20 is effective in suppressing gas velocity.

[0078] However, if edge chipping occurs near the upper opening 55a1 of the plug 55, resulting in damage to the gas flow path 55d, the vertical distance from the back side of the wafer W to the surface 55d1 of the gas flow path 55d exposed at the upper opening 55a1 may become longer. Therefore, to reduce the risk of edge chipping, it is effective to provide reinforcing ribs 55a2 that divide the upper opening 55a1 into multiple segments 55a3. The opening area of ​​each segment 55a3 is smaller than the opening area of ​​the upper opening 55a1 before the reinforcing ribs 55a2 are provided, thus reducing the likelihood of edge chipping.

[0079] When the plug 55 has multiple gas flow paths 55d, it is preferable that all of the multiple gas flow paths 55d have reinforcing ribs 55a2. Regarding the number of reinforcing ribs 55a2 and the length-to-diameter ratio X as described below... max Major axis Y max minor diameter Y min The preferred embodiments include the range of reinforcing ribs, the height D in the vertical direction of the gas flow path, and the width W in the horizontal direction of the gas flow path. Similarly, when the plug 55 has multiple gas flow paths 55d, it is preferable that all of the multiple gas flow paths 55d satisfy the conditions related to their preferred embodiments.

[0080] For the purpose of ensuring gas flow, the number of reinforcing ribs 55a2 provided in a gas flow path 55d is preferably 1 to 5, more preferably 1 to 3, and even more preferably 1 to 2.

[0081] When the upper opening 55a1 is large, edge chipping is prone to occur. Therefore, assuming there is no reinforcing rib 55a2, the major diameter X of the upper opening 55a1 is... max When the thickness is, for example, 0.1 mm or more, typically 0.5 mm or more, and more typically 1 mm or more, the chipping suppression effect provided by the stiffener 55a2 is particularly significant. (Long diameter X) max The upper limit is not specifically set, but is exemplified as below 3mm and typically below 2mm. Therefore, the major diameter X max The example is 0.1–3 mm, typically 0.5–3 mm, and more typically 1–2 mm. Here, it is assumed that the major diameter X of the upper opening 55a1 is not present when the reinforcing rib 55a2 is absent. maxIt refers to the diameter of the smallest circle that can enclose the virtual upper opening 55a1 when the reinforcing rib 55a2 is assumed to be absent, when viewed from above (see Figure 1-3).

[0082] The major diameter Y of each section 55a3 at the upper opening 55a1 max When the diameter is small, the edge chipping suppression effect is greater. Specifically, the major diameter Y... max Preferably, it is 1 mm or less, more preferably 0.7 mm or less, and even more preferably 0.5 mm or less. On the other hand, the major diameter Y of each segment 55a3 at the upper opening 55a1... max When the diameter is large, it is easy to ensure the flow rate of gas exiting from each section 55a3. Specifically, the major axis Y max Preferably, it is 0.01 mm or more, more preferably 0.05 mm or more, and even more preferably 0.1 mm or more. The major diameter Y of each segment 55a3 at the upper opening 55a1 is... max Preferably, the thickness is 0.01 to 1 mm, more preferably 0.01 to 0.5 mm, and even more preferably 0.1 to 0.5 mm.

[0083] From the perspective of ensuring gas flow, the major axis Y of the multiple sections 55a3 of the upper opening 55a1 is preferably selected. max and the minor axis Y of section 55a3 min Satisfying 0.1≤Y min / Y max The relationship is more preferably satisfied that 0.5≤Y min / Y max The relationship. On the other hand, from the perspective of suppressing edge collapse, it is preferable to satisfy Y. min / Y max A relationship ≤0.9 is preferred, especially one that satisfies Y. min / Y max The relationship is ≤0.7. Therefore, for example, it is preferable to satisfy 0.1≤Y. min / Y max The relationship is ≤0.9. Additionally, it can satisfy 0.1≤Y. min / Y max A relationship of ≤0.7 can also satisfy 0.5≤Y. min / Y max Relationships ≤0.9.

[0084] Here, the major axis Y of each section 55a3 is... max This refers to the diameter of the smallest circle that can enclose the segment 55a3 when viewed from above (see Figure 1-3). Additionally, the minor axis Y of each segment 55a3... min This refers to the diameter of the largest circle that can be enclosed by the segment 55a3 when viewed from above (see Figure 1-3).

[0085] There are no particular restrictions on the shape of the opening in each section 55a3. For example, the opening shape can be formed by a straight line, a curve, or a combination of both. Specifically, it can be a square, rectangle, trapezoid, parallelogram, or other quadrilateral. Among these, for the purpose of reducing damage to the plug caused by processing, a quadrilateral with an aspect ratio of 0.1 to 0.9 is preferred. Here, the aspect ratio refers to the ratio of the shortest side of the quadrilateral with the opening in the specified section 55a3 to the longest side of the quadrilateral with the opening in the specified section 55a3.

[0086] To improve the effect of suppressing edge chipping, the reinforcing rib 55a2 preferably extends to a certain extent along the direction of the gas flow path 55d. Specifically, when taking a coordinate axis in the vertical direction, setting the coordinate value at the upper end face 55a of the plug 55 to 0, and setting the coordinate value at the lower end face 55b to H, it is preferable that the reinforcing rib 55a2 is provided in the direction of the gas flow path 55d within a coordinate value range of at least 0 to 0.05×H, and more preferably, the reinforcing rib 55a2 is provided in the direction of the gas flow path 55d within a coordinate value range of at least 0 to 0.1×H.

[0087] On the other hand, if the reinforcing rib 55a2 extends excessively along the direction of the gas flow path 55d, the pressure loss during gas flow will increase. Therefore, from the viewpoint of ensuring gas flow, it is preferable that the reinforcing rib 55a2 is not provided at least in a range of coordinate values ​​greater than 0.5×H and less than 1.0×H, and more preferably, the reinforcing rib 55a2 is not provided in a range of coordinate values ​​from at least 0.2×H to 1.0×H.

[0088] From the viewpoint of ensuring the required gas flow rate when supplying gas between the wafer W and the ceramic substrate 20, it is preferable that the vertical height of the gas flow path 55d is relatively large. Specifically, in the cross-section of the plug 55 extending vertically from the central axis, the vertical height D of the gas flow path 55d is preferably 10 μm or more, more preferably 100 μm or more, and even more preferably 300 μm or more. However, from the viewpoint of ensuring the flow path length to reduce the risk of discharge and ensuring the plug strength, it is preferable that the vertical height D of the gas flow path 55d is not too large. Specifically, the vertical height D of the gas flow path 55d is preferably 300 μm or less, more preferably 200 μm or less, and even more preferably 100 μm or less. Therefore, the vertical height D of the gas flow path 55d is preferably, for example, 10 to 300 μm, more preferably 50 to 300 μm, and even more preferably 100 to 200 μm.

[0089] Furthermore, from the viewpoints of ensuring the flow path length to reduce the risk of discharge and ensuring the strength of the plug, in the cross-section of the plug that passes through the central axis and extends in the vertical direction, the gas flow path 55d preferably has a flat cross-sectional shape in which the height D in the vertical direction and the width W in the horizontal direction of the gas flow path 55d satisfy the relationship 0.1≤D / W≤0.9, assuming the absence of the reinforcing rib 55a2. More preferably, the relationship satisfies 0.3≤D / W≤0.8, and even more preferably, the relationship satisfies 0.5≤D / W≤0.8.

[0090] The height D in the vertical direction and the width W in the horizontal direction of the gas flow path 55d are measured according to the following steps. First, the plug is cut off so that a cross-section extending vertically from the central axis is exposed. Next, using a scanning electron microscope (SEM) at an appropriate magnification between 50 and 500, the portion of the gas flow path 55d to be measured in the cross-section is observed. The maximum distance between the vertically opposite surfaces of the portion of the gas flow path 55d to be measured is defined as the height D in the vertical direction of the portion of the gas flow path 55d (see Figure 1-2). Furthermore, the maximum distance between the horizontally opposite surfaces of the portion of the gas flow path 55d to be measured is defined as the width W in the horizontal direction of the portion of the gas flow path 55d (see Figure 1-2).

[0091] To suppress edge chipping near the upper opening 55a1 of the plug 55, the plug 55 preferably has a large fracture toughness value (KIC). Specifically, the fracture toughness value (KIC) of the portion of the plug 55 composed of the dense body 55c is preferably larger than the fracture toughness value (KIC) of the ceramic substrate 20. Since the processing conditions for components in semiconductor manufacturing apparatuses are mostly set based on the ceramic substrate 20, if the fracture toughness value (KIC) of the portion of the plug 55 composed of the dense body 55c is greater than the fracture toughness value (KIC) of the ceramic substrate 20, the risk of edge chipping in the plug 55 can be reduced.

[0092] The fracture toughness (KIC) of the portion of the plug 55 composed of dense body 55c is preferably 2 MPa·m. 1 / 2 The above is preferred, and 3 MPa·m is even better. 1 / 2 The above is further preferred to be 4 MPa·m 1 / 2 The above. No particular upper limit is set for the fracture toughness (KIC) of the portion of the plug 55 composed of dense body 55c; however, from the viewpoint of ease of manufacture, 13 MPa·m is preferred. 1 / 2 Hereinafter, 12 MPa·m is more preferred. 1 / 2 Hereinafter, 11 MPa·m is further preferred. 1 / 2Therefore, the fracture toughness (KIC) of the portion of the plug 55 composed of dense body 55c is preferably 2 to 13 MPa·m. 1 / 2 More preferably 3–12 MPa·m 1 / 2 More preferably 4–11 MPa·m 1 / 2 .

[0093] The fracture toughness (KIC) of the portion of plug 55 composed of dense body 55c and ceramic substrate 20 is determined by the following method according to the pre-crack induction fracture test method (SEPB method) specified in JISR 1607:2015.

[0094] The material constituting the plug 55 can be an electrically insulating ceramic, for example, containing one or more of alumina, aluminum nitride, silicon dioxide, and zirconium oxide. Quartz is preferred as silicon dioxide. Alternatively, it can be composed only of one or two of alumina and aluminum nitride, excluding impurities. In particular, in order to control the fracture toughness value of the portion of the plug 55 composed of dense body 55c to the range described above, it is preferable that the portion of the plug 55 composed of dense body 55c is made of a ceramic material such as alumina.

[0095] Furthermore, in order to maintain the fixation strength of the plug 55 implanted in the plug placement hole 50, it is preferable that the difference in thermal expansion coefficient between the plug 55 and the ceramic substrate 20 is small. Therefore, the materials constituting the plug 55 and the materials constituting the ceramic substrate 20 preferably both contain one or more selected from alumina and aluminum nitride, and more preferably have the same material composition.

[0096] The height of the upper end face 55a of the plug 55 is not limited. Therefore, the height of the upper end face 55a of the plug 55 can be the same as the reference surface 21c of the ceramic substrate 20, or it can be a different height. When the upper end face 55a of the plug 55 is lower than the reference surface 21c, in order to suppress the occurrence of discharge, it is preferable to place it at a position that is 0.5 mm or less lower (preferably 0.2 mm or less, more preferably 0.1 mm or less). When the upper end face 55a of the plug 55 is higher than the reference surface 21c, there is no particular restriction as long as it is lower than the upper surface of the protrusion 21b and does not obstruct the flow of gas from the plug 55.

[0097] There is no particular limitation on the height of the lower end face 55b of the plug 55. Therefore, the height of the lower end face 55b of the plug 55 can be the same as the lower surface 23 of the ceramic substrate 20, or it can be at a different height. For example, the lower end face 55b of the plug 55 can protrude to a position lower than the lower surface 23 of the ceramic substrate 20, or the lower end face 55b of the plug 55 can be located to a position higher than the lower surface 23 of the ceramic substrate 20.

[0098] The outer peripheral surface 55e of the plug 55 and the inner peripheral surface 50c of the plug mounting hole 50 can be bonded together with an adhesive; however, it is preferable to directly fit them together without an adhesive. By directly fitting them together, gaps will not form between the plug 55 and the plug mounting hole 50 due to degradation caused by corrosion, ablation, or other factors of the adhesive. Therefore, it is advantageous to suppress discharge and plug detachment caused by adhesive degradation.

[0099] Furthermore, as shown in Figure 1-1, when observing the longitudinal section obtained by cutting the ceramic substrate 20 along the thickness direction, from the viewpoint of improving the fixing strength of the plug 55, the inner peripheral surface 50c of the plug placement hole 50 preferably contacts the outer peripheral surface 55e of the plug 55 in a parallel position. In other words, the outer peripheral surface 55e of the plug 55 has the same inclination angle as the inner peripheral surface 50c of the plug placement hole 50. Therefore, in the preferred embodiment, the plug 55 has the same shape as the plug placement hole 50 (e.g., frustum conical or frustum pyramidal). Accordingly, the contact area between the inner peripheral surface 50c and the outer peripheral surface 55e of the plug 55 can be increased, thereby obtaining high fixing strength.

[0100] One method of direct fitting is to insert the plug 55 by pressing it into the plug mounting hole 50. In this case, to obtain the desired fixing strength, the horizontal cross-sectional diameter of the plug 55 at any height position before pressing is preferably slightly larger than the horizontal cross-sectional diameter of the plug mounting hole 50 at the same height position (for example, about 5 to 20 μm in terms of equivalent circle diameter). Another method of direct fitting is to screw the external thread portion provided on the outer peripheral surface 55e of the plug 55 into the internal thread portion provided on the inner peripheral surface 50c of the plug mounting hole 50.

[0101] As a method for manufacturing the plug 55 having a dense body and a gas flow path penetrating its interior, one example is a method of firing a molded body formed using additive manufacturing technology such as 3D printing. Alternatively, the plug 55 can be molded using die casting. Details of die casting are disclosed, for example, in Japanese Patent No. 5458050. In die casting, a ceramic slurry containing ceramic powder, solvent, dispersant, and gelling agent is injected into the molding space of a mold, causing the gelling agent to undergo a chemical reaction, thereby gelling the ceramic slurry and forming a molded body within the mold. In die casting, an outer mold made of a material with a low melting point, such as wax, and a neutron (a mold with the same shape as the gas flow path 55d) can be used as the molding mold. The molded body is formed within the molding mold, and then heated to a temperature above the melting point of the molding mold, the molding mold is removed by melting or burning to destroy the mold, thus manufacturing the molded body. Next, a porous material is placed in the cavities corresponding to the gas flow path 55d in the resulting molded body. Specifically, for example, raw materials such as resin and wax are added to aggregates such as ceramic powder to form pore-forming materials. Solvents are added as needed to form a slurry or paste, which is then filled into the cavities corresponding to the gas flow path 55d in the molded body. Finally, the whole body is fired. Through this firing, the pore-forming materials in the porous raw material disappear, forming a porous part, resulting in a plug 55 in which the main body and the porous part are integrated.

[0102] The porosity of the plugs can be controlled, for example, by adjusting the content of pore-forming material in the raw material composition prior to firing the ceramics used to manufacture these components. For instance, to densify the plugs, the amount of pore-forming material can be reduced or omitted.

[0103] (1-4. Base Plate)

[0104] The base plate 30 can be, for example, a circular plate with good electrical and thermal conductivity (a circular plate with the same or larger diameter as the ceramic substrate 20). Referring to Figure 1-1, a refrigerant flow path 32 for refrigerant circulation can be formed inside the base plate 30. The refrigerant flowing through the refrigerant flow path 32 is preferably a liquid, and preferably electrically insulating. Examples of electrically insulating liquids include fluorine-based inactive liquids. For example, the refrigerant flow path 32 can be formed in a single stroke from one end (inlet) to the other end (outlet) of the base plate 30 when viewed from above. A supply port and a return port (not shown) of an external refrigerant device are connected to one end and the other end of the refrigerant flow path 32, respectively. The refrigerant supplied from the supply port of the external refrigerant device to one end of the refrigerant flow path 32 passes through the refrigerant flow path 32 and returns to the return port of the external refrigerant device from the other end of the refrigerant flow path 32. After temperature adjustment, it is supplied to one end of the refrigerant flow path 32 again from the supply port. The base plate 30 is connected to a high-frequency (RF) power supply and can also be used as an RF electrode.

[0105] Examples of materials constituting the substrate 30 include metallic materials and composites of metals and ceramics. Examples of metallic materials include Al, Ti, Mo, W, or alloys thereof. Examples of composites of metals and ceramics include metal matrix composites (MMC) and ceramic matrix composites (CMC). Specific examples of such composites include materials containing Si, SiC, and Ti (also called SiSiCTi), materials obtained by impregnating Al and / or Si in a porous SiC body, and composites of Al2O3 and TiC. Materials obtained by impregnating Al in a porous SiC body are called AlSiC, and materials obtained by impregnating Si in a porous SiC body are called SiSiC. Preferably, the material of the substrate 30 has a coefficient of thermal expansion close to that of the ceramic substrate 20. For example, if the ceramic substrate 20 is made of alumina, the substrate is preferably made of SiSiCTi or AlSiC.

[0106] (1-5. Bonding layer)

[0107] As shown in Figure 1-1, the upper surface 31 of the base plate 30 can be bonded to the lower surface 23 of the ceramic substrate 20 via the bonding layer 40. The bonding layer 40 is formed using, for example, TCB (Thermal Compression Bonding). TCB refers to a known method of bonding two components by sandwiching a metal bonding material between them and applying pressure to the two components at a temperature below the solidus temperature of the metal bonding material. The bonding layer 40 can be composed of a metal bonding layer using, for example, an Al-Mg based bonding material or an Al-Si-Mg based bonding material. The bonding layer 40 can be a layer formed of solder or metal brazing filler metal. Alternatively, the bonding layer 40 can be composed of a resin adhesive layer instead of a metal bonding layer. Examples of materials for the resin adhesive layer include silicone resin adhesives, epoxy resin adhesives, and acrylic resin adhesives. To improve the thickness uniformity of the resin adhesive layer, a spacer (not shown) can be disposed between the upper surface 31 of the base plate 30 and the lower surface 23 of the ceramic substrate 20.

[0108] The bonding layer 40 has a through hole 42. The through hole 42 is located opposite the large-diameter portion 34a of the gas hole 34 (described later). The through hole 42 is coaxially arranged with the large-diameter portion 34a, so that the diameter of the through hole 42 is the same as the diameter of the large-diameter portion 34a. In this specification, "same" means not only completely identical, but also substantially identical (e.g., falling within tolerance range, etc.) (the same applies below). Multiple through holes 42 can be provided relative to a plug 55. In this case, the multiple through holes 42 are preferably arranged in a point-symmetric manner with respect to the central axis extending vertically of the plug 55. Compared with using a single large through hole 42, providing multiple through holes 42 allows for a smaller size of each through hole 42, thereby reducing the risk of discharge. In addition, by providing multiple through holes 42, the required gas flow rate can be ensured.

[0109] (1-6. Gas supply path)

[0110] Referring to Figure 1-1, the gas supply path 60, which passes through the base plate 30 and the bonding layer 40 to supply gas to the plug 55, has, for example, a through hole 42 penetrating the bonding layer 40 in a vertical direction, and a gas hole 34 communicating with the through hole 42 and penetrating the base plate 30 from the upper surface 31 to the lower surface 33. A large-diameter portion 34a may be further provided on the upper surface 31 of the base plate 30 at a position opposite to the through hole 42. By having the through hole 42 and even the large-diameter portion 34a, when the plug 55 is positioned in the plug placement hole 50, even if the plug placement hole 50 and / or the plug 55 have manufacturing errors, these errors can be absorbed because space is created to allow the plug 55 to enter.

[0111] There are no particular restrictions on the configuration of the gas supply path 60. For example, like... Figure 2 As shown in another embodiment of the semiconductor manufacturing apparatus component 10 of the present invention, one or more annular portions 64a extending concentrically with the base plate 30 when viewed from above, one or more gas inlet portions 64b supplying gas introduced from the lower surface 33 of the base plate 30 to the annular portions 64a, and a distribution portion 64c distributing gas from the annular portions 64a to each plug 55. In this embodiment, the upper end of the distribution portion 64c communicates with the through hole 42 of the bonding layer 40. Figure 2 In this diagram, the same reference numerals are used to denote the same components as those shown in the embodiment of Figure 1-1. The number of gas inlet sections 64b is less than the number of distribution sections 64c; for example, there may be only one. Accordingly, the number of gas pipes connected to the base plate 30 can be less than the number of plugs 55. Other auxiliary passages (not shown) may also be provided.

[0112] (1-7. Others)

[0113] A lifting pin hole can be provided through the component 10 of the semiconductor manufacturing apparatus. The lifting pin hole is a hole through which a lifting pin, which moves the wafer W up and down relative to the upper surface 21 of the ceramic substrate 20, is inserted. When the wafer W is supported by, for example, three lifting pins, three lifting pin holes are provided.

[0114] <2. How to use components for semiconductor manufacturing equipment>

[0115] Next, the method of using the semiconductor manufacturing apparatus component 10 configured as described above will be explained illustratively. First, with the semiconductor manufacturing apparatus component 10 disposed in a chamber (not shown), a wafer W is placed on the upper surface 21 of a ceramic substrate 20. Then, the vacuum level in the chamber is reduced using a vacuum pump to a predetermined level, and a voltage is applied to the electrodes 22 of the ceramic substrate 20 to generate an electrostatic adsorption force, thereby adsorbing and fixing the wafer W to the wafer placement surface (specifically, the upper surface of the sealing strip 21a or the upper surface of the protrusion 21b).

[0116] Next, a reaction gas atmosphere at a predetermined pressure (e.g., tens to hundreds of Pa) is established within the chamber. Under this state, a high-frequency voltage, such as an RF voltage, is applied between an upper electrode (not shown) positioned at the top of the chamber and the base plate 30 of the semiconductor manufacturing apparatus component 10 to generate plasma. The generated plasma is used to process the surface of the wafer W. Coolant circulates in the coolant flow path 32 of the base plate 30. For cooling or other purposes, a back-side gas is introduced into the gas supply path 60 from a gas cylinder (not shown). A heat-conducting gas (e.g., He gas) can be used as the back-side gas. The back-side gas is supplied through the gas supply path 60 to a plurality of plug placement holes 50, thereby being supplied and sealed in the space between the back side of the wafer W and the reference surface 21c of the wafer placement surface. With the presence of this back-side gas, heat conduction between the wafer W and the ceramic substrate 20 is carried out efficiently.

[0117] Furthermore, by providing a plug 55 in the plug configuration hole 50, discharge within the plug configuration hole 50 can be suppressed. Without the plug 55, gas molecules are ionized by the application of the RF voltage, and the resulting electrons are accelerated and collide with other gas molecules, thereby causing glow discharge or even arc discharge. However, if the plug 55 is present, the electrons will encounter the plug 55 before colliding with other gas molecules, thus suppressing the discharge.

[0118] <3. Manufacturing method of components for semiconductor manufacturing equipment>

[0119] Next, based on Figure 3 The manufacturing method of component 10 for a semiconductor manufacturing apparatus will be described illustratively. First, a ceramic substrate 20, a base plate 30, and a metal bonding material 90 are prepared. Figure 3(A)). The ceramic substrate 20 can be manufactured according to the following steps. A circular ceramic sintered plate, which serves as the base of the ceramic substrate 20, is made by hot pressing and firing a molded body of ceramic powder. The molded body can be made by stacking multiple cast molded bodies, by die casting, or by pressing ceramic powder. An electrode 22 is built into the ceramic sintered plate. Next, a plug placement hole 50 is formed through the ceramic sintered plate in the vertical direction, avoiding the electrode 22. The plug placement hole 50 can be formed by machining. In addition, a plurality of protrusions 21b and a sealing strip 21a are formed on the upper surface of the ceramic sintered plate by laser processing or the like. The plurality of protrusions 21b and the sealing strip 21a can be formed after the ceramic substrate 20 is joined to the base plate 30.

[0120] The base plate 30 has a refrigerant flow path 32 and a gas hole 34. The gas hole 34 has a large-diameter portion 34a opposite to the upper surface 31. The base plate 30 having the refrigerant flow path 32 can be manufactured, for example, by joining multiple MMC plate components with grooves and holes corresponding to the refrigerant flow path 32 formed by machining using a method such as TCB. The gas hole 34 can be formed relative to the base plate 30 after the refrigerant flow path 32 has been formed by machining. The metal bonding material 90 has a through hole 92 at a position opposite to the large-diameter portion 34a of the gas hole 34. The through hole 92 can be formed by machining.

[0121] Next, the metal bonding material 90 is sandwiched between the lower surface 23 of the ceramic substrate 20 and the upper surface 31 of the base plate 30 to form a laminate. Preferably, the ceramic substrate 20 with its plug hole 50, the metal bonding material 90 with its through hole 92, and the base plate 30 with its gas hole 34 are stacked coaxially. Then, the laminate is bonded by applying pressure at a temperature below the solidus temperature of the metal bonding material 90 (e.g., above the solidus temperature minus 20°C but below the solidus temperature), and then returned to room temperature (TCB). Thus, the metal bonding material 90 and the through hole 92 become the bonding layer 40 and the through hole 42, respectively, resulting in a laminate 94 where the ceramic substrate 20 and the base plate 30 are bonded by the bonding layer 40. Figure 3 (B)). The metal bonding material 90 preferably uses a bonding material with a thickness of about 100 μm (e.g., 80 to 240 μm).

[0122] Next, prepare a plug 55 with a size and shape that can fit into the plug configuration hole 50. Figure 3(B)). The height of the plug 55 is the same as the depth of the plug mounting hole 50. Next, the plug 55 is pressed into the plug mounting hole 50 from the upper opening 50a of the ceramic substrate 20 toward the lower opening 50b. Alternatively, an external thread can be formed on the outer peripheral surface 55e of the plug 55 formed by firing or the like, and an internal thread can be formed on the inner peripheral surface 50c of the plug mounting hole 50. The plug 55 is then screwed into the plug mounting hole 50 for insertion, so that the external thread of the plug 55 and the internal thread of the plug mounting hole 50 engage, thereby assembling the plug 55. Afterwards, through processes such as adjusting the overall shape, the semiconductor manufacturing apparatus component 10 is completed. Figure 3 (C) in the middle.

[0123] Symbol Explanation

[0124] 10: Components for semiconductor manufacturing equipment

[0125] 20: Ceramic substrate

[0126] 21: Upper surface

[0127] 21a: Sealing tape

[0128] 21b: protrusion

[0129] 21c: Reference plane

[0130] 22: Electrode

[0131] 23: Lower surface

[0132] 30: Base plate

[0133] 31: Upper surface

[0134] 32: Refrigerant flow path

[0135] 33: Lower surface

[0136] 34: Gas pores

[0137] 34a: Large diameter part

[0138] 40: Bonding layer

[0139] 42: Through hole

[0140] 50: Plug configuration hole

[0141] 50a: Open at the top

[0142] 50b: Lower opening

[0143] 50c: Inner circumferential surface

[0144] 55: Plug

[0145] 55a: Top surface

[0146] 55a1: Open at the top

[0147] 55a2: Reinforcing rib

[0148] 55a3: Section

[0149] 55b: Lower end face

[0150] 55b1: Open at the bottom

[0151] 55c: Dense body

[0152] 55d: Gas flow path

[0153] 55d1: surface

[0154] 55e: outer peripheral surface

[0155] 60: Gas supply path

[0156] 64a: Ring section

[0157] 64b: Gas inlet section

[0158] 64c: Distribution Department

[0159] 90: Metal bonding materials

[0160] 92: Through hole

[0161] 94: Conjugate

Claims

1. A component for a semiconductor manufacturing apparatus, comprising: a ceramic substrate having an upper surface and a lower surface for placing a wafer; a plug mounting hole extending through the ceramic substrate in a vertical direction; and a plug inserted into the plug mounting hole. The component for the semiconductor manufacturing apparatus is characterized in that... The plug is made of a compact body and has: an upper end face exposed on the upper surface side; a lower end face exposed on the lower surface side; and a gas flow path extending from an upper opening on the upper end face through the interior of the compact body to a lower opening on the lower end face. The gas flow path is provided with reinforcing ribs that divide the upper opening into multiple sections.

2. The component for a semiconductor manufacturing apparatus according to claim 1, characterized in that, The number of reinforcing ribs provided in one of the gas flow paths is 1 to 5.

3. The component for a semiconductor manufacturing apparatus according to claim 1 or 2, characterized in that, Assuming the absence of the reinforcing rib, the major diameter X of the upper opening is... max It is 0.1mm or more.

4. The component for a semiconductor manufacturing apparatus according to claim 1 or 2, characterized in that, Regarding each of the plurality of sections with the upper opening, the major diameter Y of that section... max and the minor axis Y of this section min Satisfying 0.1≤Y min / Y max Relationships ≤0.

9.

5. The component for a semiconductor manufacturing apparatus according to claim 4, characterized in that, Y max It is 0.01 to 0.5 mm.

6. The component for a semiconductor manufacturing apparatus according to claim 1 or 2, characterized in that, When a coordinate axis is taken in the vertical direction, and the coordinate value at the upper end face of the plug is set to 0 and the coordinate value at the lower end face is set to H, the reinforcing rib is provided in the direction of the gas flow path extension at least in the range of coordinate values ​​from 0 to 0.05×H.

7. The component for a semiconductor manufacturing apparatus according to claim 6, characterized in that, The reinforcing ribs were not provided at least in the range of coordinate values ​​exceeding 0.2×H and below 1.0×H.

8. The component for a semiconductor manufacturing apparatus according to claim 1 or 2, characterized in that, In the cross section of the plug that passes through the central axis and extends in the vertical direction, the gas flow path has a flat cross-sectional shape with a height D in the vertical direction and a width W in the horizontal direction satisfying the relationship 0.1≤D / W≤0.9, assuming that the reinforcing rib is not present.

9. The component for a semiconductor manufacturing apparatus according to claim 8, characterized in that, The height D is 10–300 μm.

10. The component for a semiconductor manufacturing apparatus according to claim 1 or 2, characterized in that, The fracture toughness (KIC) of the dense body portion of the plug is greater than that of the ceramic substrate.

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