Systems and apparatus for processing 200 mm wafers in an apparatus configured to process 300 mm wafers

Abstract

Semiconductor processing tools having 300mm and 200mm dual wafer processing capability are disclosed, as well as a system for facilitating the processing of 200mm wafers using 300mm equipment. The system can use an adapter ring having an outer diameter of 300mm and an inner diameter slightly smaller than 200mm, which can be engaged with a 200mm wafer to create a load having a diameter of 300mm, thereby simulating a 300mm wafer.

Description

[0001] Related applications The PCT application forms are filed together with this specification as part of this application. Each application identified in the concurrently filed PCT application forms that claims a benefit or priority under this application is incorporated herein by reference in its entirety for all purposes. Background Technology

[0002] Semiconductor manufacturing processes typically occur in a semiconductor processing chamber, where one or more semiconductor wafers of a specific size are supported by wafer supports (such as substrates) and exposed to one or more process gases and / or subjected to various environmental conditions that result in the performance of a particular semiconductor process (such as deposition, etching, etc.).

[0003] Semiconductor wafers are typically supplied in only certain industry-standard sizes. For example, in the 1960s, semiconductor wafers were generally very small, such as 20mm in diameter. By the 1980s, the industry widely used 150mm diameter wafers, followed by 200mm diameter wafers in the early 1990s, and 300mm diameter wafers since the early 2000s. At this point, the vast majority (approximately 60% or more) of the wafers processed are 300mm wafers. However, 200mm wafers still account for a considerable share of all wafers processed, for example, approximately 25%.

[0004] Semiconductor processing tools, such as etching chambers and deposition chambers, are typically designed to process semiconductor wafers of a specific size. This is because a semiconductor processing tool designed to process 300mm wafers must be larger than one designed to process 200mm wafers, and therefore requires more mounting space than a tool designed to process only 200mm wafers. Therefore, wafer manufacturers typically design a wafer fab (“fab”) to process either 200mm or 300mm wafers, and then attempt to maximize the number of tools of the selected wafer type that can be accommodated within the fab’s floor plan, thereby maximizing the productivity of the selected wafer size. Summary of the Invention

[0005] Details of one or more implementations of the subject matter described in this specification are illustrated in the accompanying drawings and the following description. Other features, aspects, and advantages will become apparent from the specification, drawings, and claims.

[0006] In some implementations, an adapter ring may be provided, comprising an annular portion having a first side, a second side opposite to the first side, an outer diameter of 300 mm ± 1 mm, and an inner diameter greater than 200 mm and less than or equal to 206 mm. The adapter ring may also include one or more wafer support features. The first and second sides may define a thickness of the annular portion between 0.5 mm and 1 mm. Each wafer support feature may extend radially inward from the inner periphery of the annular portion defined by the inner diameter of the annular portion. At least a portion of each wafer support feature may extend into a 200 mm diameter region centrally located on the annular portion, and the one or more wafer support features may be adjacent to the annular portion.

[0007] In some implementations of the adapter ring, the portion of each wafer support feature extending into the 200mm diameter region located on the annular portion can be recessed from the first side of the annular portion by between 0.25mm and 1.5mm.

[0008] In some implementations of the adapter ring, no part of the adapter ring extends beyond the first reference plane coplanar with the first side and the second reference plane coplanar with the second side.

[0009] In some implementations of the adapter ring, no part of the adapter ring extends beyond the outer periphery of the annular portion defined by the outer diameter of the annular portion.

[0010] In some implementations of the adapter ring, the one or more wafer support features may include an annular flange having an inner periphery with a diameter of less than 200 mm and centered on the annular portion.

[0011] In some implementations of the adapter ring, the one or more wafer support features may include a plurality of tabs that extend radially inward from the inner periphery of the annular portion.

[0012] In some implementations of the adapter ring, the one or more wafer support features may also include an annular flange having an inner periphery with a diameter of less than 200 mm and being centered on the annular portion.

[0013] In some implementations of the adapter ring, the adapter ring may further include an annular flange, which is centered on the annular portion and has an inner periphery with a diameter greater than 200 mm and smaller than the inner diameter of the annular portion.

[0014] In some implementations of the adapter ring, the adapter ring may also include a notched shield that extends radially inward from the inner periphery of the annular flange.

[0015] In some implementations of the adapter ring, the one or more wafer support features and the ring portion may be made of quartz, glass, silicon, aluminum alloy, or alumina.

[0016] In some implementations, an apparatus may be provided comprising: a semiconductor processing chamber; a wafer support system configured to support a load located within the semiconductor processing chamber by contacting a load at least at a plurality of locations outside a first cylindrical reference volume located within the semiconductor processing chamber; and a first lifting pin mechanism comprising a plurality of first lifting pins and one or more first actuators. The one or more first actuators may be configured to switch between a first configuration and a second configuration. The first lifting pin mechanism may be configured to position the ends of the first lifting pins at a first height when in the first configuration, and to position the ends of the first lifting pins at a second height greater than the first height when in the second configuration. The ends of the first lifting pins may be positioned within a second cylindrical reference volume, and both the first and second cylindrical reference volumes may have a diameter of 200 mm.

[0017] In some implementations, the wafer support system may be a base assembly having: a) an upper surface on which a plurality of gas distribution ports are distributed; and b) a plurality of support pillars extending upward to a reference plane disposed above the upper surface and vertically offset upward therefrom.

[0018] In some such implementations, at least a portion of these support columns may be positioned within a cylindrical reference volume of the processing chamber, which is coaxial with the first cylindrical reference volume, and the diameter of the cylindrical reference volume of the processing chamber may be 300 mm.

[0019] In some implementations, the device may further include the load, which may comprise a 200mm diameter wafer and a 300mm adapter ring. The 300mm adapter ring has an annular portion having a first side, a second side opposite to the first side, an outer diameter of 300mm ± 1mm, and an inner diameter greater than 200mm and less than or equal to 206mm. The wafer may be housed within the annular portion and supported by the adapter ring.

[0020] In some implementations, the support pillars can be positioned completely outside a cylindrical reference volume of a processing chamber coaxial with the first cylindrical reference volume. The diameter of the cylindrical reference volume of the processing chamber can be 300 mm. The load can include a carrier ring, an adapter ring, and a wafer. The carrier ring can be configured to support the adapter ring, the adapter ring can be configured to support the wafer, and the support pillars can be configured to support the carrier ring.

[0021] In some implementations, the first lifting pin mechanism may be configured such that the end of the first lifting pin is positioned within the semiconductor processing chamber, and the first cylindrical reference volume and the second cylindrical reference volume may be coaxial with each other, such that the end of the first lifting pin is also positioned within the first cylindrical reference volume.

[0022] In some implementations, the device may include a second lifting pin mechanism comprising a plurality of second lifting pins and one or more second actuators. The one or more second actuators may be configured to switch between a third configuration and a fourth configuration. The second lifting pin mechanism may be configured to position the ends of the second lifting pins at a third height when in the third configuration, and to position the ends of the second lifting pins at a fourth height greater than the third height when in the fourth configuration. The ends of the second lifting pins may be positioned outside the first cylindrical reference volume and within a radial distance of 50 mm from the first cylindrical reference volume.

[0023] In some implementations, the device may also include a secondary chamber separated from the semiconductor processing chamber. The first lifting pin mechanism may be configured such that the end of the first lifting pin is positioned within the secondary chamber.

[0024] In some implementations, the secondary chamber may include one or more sets of load-supporting features. These sets of load-supporting features may include one or more load-supporting features of a first set, wherein at least a portion of each load-supporting feature extends into a secondary chamber cylindrical reference volume located within the secondary chamber and coaxial with the second cylindrical reference volume, and the diameter of the secondary chamber cylindrical reference volume may be 300 mm.

[0025] In some implementations, the device may further include a first robotic arm configured to move between a first state and a second state, in which a first end effector of the first robotic arm extends into the semiconductor processing chamber, and in the second state, the first end effector of the first robotic arm extends into the secondary chamber. The first end effector may have contact features, configured to contact and support the load within an annular region having an inner periphery with a diameter of 200 mm and an outer periphery with a diameter of 300 mm, and may also be configured not to contact the load within the inner periphery of the annular region.

[0026] In some such implementations, the device may further include a second robotic arm configured to move between a third state and a fourth state, in which a second end effector of the second robotic arm extends into the secondary chamber, and in the fourth state, the second end effector of the second robotic arm retracts from the secondary chamber. The second end effector may have contact features configured to contact and support the wafer within a circular region having an outer perimeter with a diameter of 200 mm.

[0027] In some implementations, the secondary chamber may be a loading lock and may include: a first wafer transfer channel through which the first end effector extends when the first robotic arm is in the second state; and a second wafer transfer channel through which the second end effector extends when the second robotic arm is in the third state. The first wafer transfer channel may be different from the second wafer transfer channel.

[0028] In some such implementations, the device may further include a first slit valve and a second slit valve. The first slit valve may be configured to switch between a first position and a second position in response to the receipt of one or more first signals, and the second slit valve may be configured to switch between a third position and a fourth position in response to the receipt of one or more second signals. The first slit valve may seal the first wafer pass-through channel in the first position and may not seal the first wafer pass-through channel in the second position. Similarly, the second slit valve may seal the second wafer pass-through channel in the third position and may not seal the second wafer pass-through channel in the fourth position.

[0029] In some implementations, the device may further include a transfer chamber connected to both the semiconductor processing chamber and the secondary chamber. The first robotic arm may be located inside the transfer chamber, and the second robotic arm may be located outside the transfer chamber.

[0030] In some implementations, the device may further include a transfer chamber connected to both the semiconductor processing chamber and the secondary chamber, and the secondary chamber may serve as a buffer station.

[0031] In some implementations, the secondary chamber may not be separated from the transfer chamber by valves or doors.

[0032] In some implementations, the group or multiple groups of one or more load support features may include multiple groups of one or more load support features, and each group of one or more load support features may be positioned at different heights within the secondary chamber.

[0033] In some implementations, at least one or more load-bearing features of the first group may include two flange portions configured adjacent to the opposite inner side of the secondary chamber and having innermost edges separated from each other by a gap of at least 100 mm.

[0034] In some such implementations, none of the load-bearing features of the first group extend into a rectangular reference volume having a bottom surface perpendicular to the central axis of the second cylindrical reference volume. This rectangular reference volume may extend outward from the secondary chamber along a first axis perpendicular to the central axis and may have a width less than or equal to the gap along a second axis perpendicular to both the first and central axes.

[0035] In some implementations, the device may further include a loading lock connected to the transfer chamber. The loading lock may include one or more first contact features and one or more second contact features, each first contact feature positioned within an annular region having an outer diameter of 300 mm and an inner diameter of 200 mm, each second contact feature positioned within a circular region centered on the annular region and having a diameter of 200 mm, and each first contact feature having an uppermost portion above the uppermost portion of each second contact feature.

[0036] These and other implementation schemes will be discussed in more detail below. Attached Figure Description

[0037] The following figures are provided in the discussion below; these figures are not intended to limit the scope and are provided only to facilitate the discussion below.

[0038] Figures 1 to 3 Describe various views of an exemplary adapter ring.

[0039] Figures 4 to 6 Various views depicting another exemplary adapter ring.

[0040] Figures 7 to 9 Various views depicting another exemplary adapter ring.

[0041] Figure 10 A schematic diagram of a processing chamber configured to perform semiconductor processing operations on the top side of a wafer is depicted.

[0042] Figure 11 and 12 Displaying different operating states Figure 10 The processing room.

[0043] Figure 13 show Figure 10 Variations of the exemplary processing chamber.

[0044] Figure 14 show Figure 10 Another variant of the exemplary processing chamber.

[0045] Figures 15 to 19 A schematic diagram of an exemplary semiconductor processing chamber is described, wherein an adapter ring may be used and is also configured for wafer backside processing operations.

[0046] Figures 20 to 30 An exemplary semiconductor processing tool is described, which is configured to process both 200mm and 300mm wafers.

[0047] Figure 31a A schematic diagram of a semiconductor processing tool is shown, which has two processing chambers and two secondary chambers, all of which are connected to a transfer chamber.

[0048] Figures 31b to 31d More detailed description Figure 31a A schematic diagram of the first and second level chambers.

[0049] Figure 31e and 31f More detailed description Figure 31a View of the second and second-level chambers.

[0050] Figure 32 Depict an exemplary robotic arm.

[0051] Figure 33 and 34 Another exemplary robotic arm is described.

[0052] The above figures are provided to facilitate understanding of the concepts discussed in this disclosure and to illustrate some implementations that fall within the scope of this disclosure, but are not intended to be restrictive. Implementations that are consistent with this disclosure but are not described in the figures are still considered to be within the scope of this disclosure. Detailed Implementation

[0053] This disclosure relates to apparatus and systems for facilitating the processing of 200mm wafers in a semiconductor processing system configured to process 300mm wafers. As mentioned above, most wafer fabs are designed to process a single specific wafer size, such as 200mm or 300mm, and therefore include equipment sized to process only that specific wafer size. However, some 200mm wafer fab operators may wish to configure a fab capable of handling both 200mm and 300mm wafers, thus providing them with the flexibility to, for example, process 200mm at roughly the beginning of the fab's lifespan and switch to 300mm near the end of the fab's lifespan (possibly due to a further shift away from 200mm wafers in the industry), or to accommodate potential shortages of one wafer size or other aspects that may occur due to supply chain issues.

[0054] Such devices and systems disclosed herein can generally be divided into two distinct categories: a) bonders that allow the “conversion” of 200mm wafers into payloads similar to 300mm wafers; and b) tools specifically configured to handle such payloads (and which may include such bonders and wafers supported by such bonders (e.g., the first category, if present). The first category is discussed below, followed by a subsequent discussion of the second category.

[0055] As used in this document, the term "load" refers to a single 300mm wafer or a 200mm wafer coupled with a dedicated adapter ring having the same outer diameter as the nominal size of the 300mm wafer. Figures 1 to 3 Describe various views of such an adapter ring. Figure 1 Figure 2 depicts a top view of such an adapter ring. Figure 1 The side cross-sectional view of the adapter ring, and Figure 3 A detailed drawing depicting the portion of the adapter ring enclosed within the rectangle shown in Figure 2.

[0056] As can be seen, the adapter ring 110 includes an annular portion 112 having an outer perimeter 118a defined by an outer diameter 116a and an inner perimeter 118b defined by an inner diameter 116b. The outer diameter 116a will be approximately 300 mm, for example 300 mm ± 1 mm, to have the same nominal size as a 300 mm diameter wafer (±1 mm allows for some minor variation in the adapter ring size; this specified amount is greater than the ±0.2 mm variation allowed in a 300 mm wafer and allows for reduced manufacturing costs of the adapter ring, but in some implementations, the adapter ring may have an outer diameter of 300 mm ± 0.2 mm, which is the same as a 300 mm wafer, thus completely mimicking the outer diameter of a 300 mm wafer). This allows the adapter ring to be compatible with clearances and equipment designed for 300 mm wafers, thereby allowing the use of the adapter ring (and 200 mm wafers) with little or no additional modification to some equipment designed for handling and / or processing 300 mm wafers. The inner diameter 116b will thus be slightly larger than the outer diameter of the circle 122 defined by the 200mm wafer, for example, 200mm to about 206mm. Such a diameter allows a 200mm diameter wafer to be placed inside the annular portion 112 with a smaller clearance (e.g., to prevent jamming), while still providing relatively continuous space for the material throughout the load generated by placing the 200mm wafer into the adapter ring.

[0057] The annular portion 112 may have: a first side 114a and a second side 114b, which may define a thickness T of the annular portion; and first and second reference planes 124a and 124b (which may be coplanar with the first side 114a and the second side 114b, respectively). For example, the thickness T may be set to a value similar to that of a typical 200mm wafer, a typical 300mm wafer, or a value between the thicknesses of a typical 200mm wafer and a typical 300mm wafer. For example, the thickness T may be a value between approximately 0.7mm and 1mm, or in some implementations, a value between approximately 0.5mm and 1mm. In some implementations, the thickness T may have a non-uniform thickness profile in the radial direction to accommodate the configuration of other components of the system and / or improve process uniformity.

[0058] The adapter ring 110 also has one or more wafer support features 120 extending radially inward from the inner periphery 118b of the annular portion 112. At least a portion of each wafer support feature 120 may extend into a 200mm diameter region 122 centered on the annular portion 112, thereby providing a surface on which a portion of the 200mm wafer can sit when engaged with the adapter ring 110, thus allowing the adapter ring 110 to support the 200mm wafer from below. In the adapter ring 110, there is a single wafer support feature 120 in the form of an annular flange 128 extending around the entire inner periphery 118b of the annular portion 112 and centered on the annular portion 112. It should be understood that the annular flange 128 may have an inner diameter smaller than the outer diameter of a 200mm wafer, for example, a wafer smaller than 200mm. In some implementations, the adapter ring 110 may further include a notch shield 130 that extends radially inward from the inner periphery 118b to a greater extent than the wafer support feature 120, and is aligned with a corresponding "notch" of the originally circular outer periphery 118a of the wafer 102 to which the adapter ring 110 engages. This notch in the wafer can serve as a reference point for determining wafer orientation, allowing the wafer to always be oriented in a specific direction when placed in various semiconductor processing tools. However, the notch may also provide a flow path for gas to pass through the wafer edge, where the conductivity is higher than that present along the rest of the wafer edge. This could lead to localized flow inhomogeneities near the notch and result in inhomogeneities in processing (e.g., deposition or etching) performed on the wafer. The notch shield 130 can reduce the conductivity difference that may exist between the gas flow through the notch and the gas flow through other areas of the wafer 102 along the wafer edge by at least partially blocking the gas flow through the notch.

[0059] The adapter ring 110 is designed such that the wafer support surface of the wafer support feature 120 is recessed from the first side 114a by a distance nominally equal to the thickness of the wafer 102 to be bonded to the adapter ring 110. This configuration results in a load having a generally flat top surface (including the first side 114a and the top side of the wafer). In some implementations, the thickness T of the annular portion 112 can be selected to be equal to the typical thickness of a 300mm wafer, for example, 775µm, and the distance between the first side 114a and the wafer support surface of the wafer support feature 120 can be selected to be equal to the typical thickness of a 200mm wafer, for example, 725µm (in such implementations, the thickness of the wafer support feature can be 50µm). This arrangement allows a load including a 200mm wafer with this adapter ring 110 to conform to all clearance specifications conforming to a load including only a single 300mm wafer. This approach reduces the need for possible modifications to the semiconductor processing tools in which these loads will be handled, and / or reduces the likelihood of collision events due to non-standard load thickness.

[0060] Figures 4 to 6 Describe various views of another adapter ring. Figure 4 Figure 5 depicts a top view of this adapter ring, while Figure 6 depicts... Figure 4 The side cross-sectional view of the adapter ring, and Figure 6 Depicting surrounding Figure 4 A detailed view of the adapter ring portion within the rectangle shown. Figures 4 to 6 410 adapter ring and Figures 1 to 3 The adapter ring 110 is roughly the same as, and has the same characteristics as, Figures 1 to 3 Elements whose last two digits are identical can be assumed to be the same as those in the previous text. Figures 1 to 3 The equivalent elements are the same, unless otherwise stated below. Furthermore, refer to... Figures 1 to 3 The description of these components also applies to Figures 4 to 6 Equivalent components in [the text].

[0061] Figures 4 to 6 The adapter ring 410 differs from the adapter ring 110 in that the distance between the first side 414a and the wafer support surface of the wafer support feature 420 is less than the thickness of the wafer 402. In this particular example, the thickness T of the annular portion 412 is chosen to be the same as the thickness of the wafer 402, but in other implementations, the thickness T of the annular portion 412 can be chosen to be equal to a wafer thickness of 300 mm, for example, 775 μm, and the distance between the first side 414a and the wafer support surface of the wafer support feature 420 can be chosen to be less than a wafer thickness of 200 mm, for example, less than 725 μm. Figure 6As shown, such an adapter ring 410 can cause the wafer 402 supported thereto to protrude slightly above the first side 414a, but the wafer support feature 420 may be thicker and therefore more robust than the annular portion 112 of the same thickness in the adapter ring 110.

[0062] In the example above, adapter rings 110 and 410 each include a single wafer support feature 120 or 420, which are respectively present in the form of annular flanges 128 or 428. Other implementations, such as Figures 7 to 9 The implementation shown may have multiple wafer support features.

[0063] Figures 7 to 9 The adapter ring 710 series and Figures 1 to 3 Adapter ring 110 or Figures 4 to 6 The adapter ring 410 is roughly the same as that of the adapter ring and has the same characteristics as the adapter ring 410. Figures 1 to 6 Elements whose last two digits are identical can be assumed to be the same as those in the previous text. Figures 1 to 6 The equivalent elements are the same, unless otherwise stated below. Furthermore, refer to... Figures 1 to 6 The description of these components also applies to Figures 7 to 9 Equivalent components in [the text].

[0064] like Figure 7 As can be best seen in the image, the adapter ring 710 in this example includes a plurality of discrete wafer support features 720 located at spaced intervals around the inner periphery 718b of the annular portion 712. In this example, there are six wafer support features 720, each in the form of a tab 726 extending radially inward from the inner periphery 718b of the annular portion 712. For example, in some cases, the circumferential width of the tab 726 may be approximately one millimeter or two millimeters. Other implementations may include more or fewer of these wafer support features 720.

[0065] For example, the wafer support features 120, 420 and 720 discussed above may have a wafer support surface recessed from the first side 114a by 0.25 mm to 1.5 mm.

[0066] In some implementations, there may be an annular flange extending radially inward from the inner periphery of the annular portion, and multiple wafer support features, such as tabs, also extending radially inward from the inner periphery of the annular portion. Since the tabs can provide support for the wafer, the annular flange may not serve to support the wafer, but rather can be provided to help reduce gas flow through the radial gap between the annular portion and the wafer, for example, by narrowing or covering such a gap. In some such implementations, the diameter of the annular flange may actually be slightly larger than the diameter of a 200mm wafer.

[0067] In some implementations, adapter rings 110, 410, and / or 710 may be configured such that no portion of adapter rings 110, 410, or 710 extends beyond the first reference plane 124a, 424a, or 724a and / or the second reference plane 124b, 424b, or 724b and / or beyond the outer perimeter 118a, 418a, or 718a (understandably, although the outer perimeters 118a, 418a, and 718a and the inner perimeters 118b, 418b, and 718b are shown as slightly offset inward from the edges of the annular portions 112, 412, and 712, respectively, this is merely a drawing convention to make it easier for the reader to distinguish the lines representing the respective perimeters).

[0068] Generally, adapter rings 110, 410, and / or 710 (or similar adapter rings) can be fabricated as continuous components, i.e., formed as a single piece. Adapter rings 110, 410, and / or 710 can be manufactured to mimic the characteristics and behavior of the wafer with which they are combined to produce a “load” that largely behaves similarly to a 300mm wafer. For example, the adapter rings can be made of silicon, such as quartz or glass, for example, a material similar to or the same as that used to manufacture 200mm wafers, so that the load roughly mimics the homogeneous material of a 300mm wafer, which is also made of a homogeneous material (this refers to the original wafer material – because the composition of a wafer can change over time as it is processed and various features are deposited or etched therein). In other implementations, the adapter rings can be made of a material different from that of a 200mm wafer, such as alumina or other ceramic materials or aluminum alloys, but this likely introduces very little change in process conditions compared to using a 300mm diameter wafer.

[0069] A relatively important feature of the adapter rings discussed above is that each adapter ring is essentially annular with a large opening in the center, having a diameter of 200 mm, slightly less than 200 mm, or slightly greater than 200 mm (but with tabs or other wafer support features extending radially inward to extend into a 200 mm diameter region centered in the adapter ring). This allows a lift pin mechanism, with lift pins located inside the 200 mm diameter circle (or within the innermost diameter of the adapter ring), to lift the 200 mm wafer placed in the adapter ring (or lower this 200 mm wafer into the adapter ring) during wafer unloading / loading operations.

[0070] Such a lifting pin mechanism can be implemented in several ways. For example, in some implementations, the processing chamber may include a lifting pin mechanism with a lifting pin located within a 200mm diameter region. Some such processing chamber implementations may also include a second lifting pin mechanism with a lifting pin located within an annular region with an inner diameter of 200mm and an outer diameter of 300mm. These implementations may allow the loading / unloading of a 200mm wafer onto / from an adapter ring residing within the processing chamber, but may also allow the adapter ring to be lifted to allow loading / unloading of the adapter ring into / from the processing chamber. In other implementations, the lifting pin mechanism with a lifting pin within a 200mm diameter region may be located outside the processing chamber, for example, in a loading lock or buffer station. In this implementation, the processing chamber can be equipped with a lifting pin mechanism or a wafer support system that contacts the adapter ring / 200mm wafer load at a location outside the 200mm diameter area. Furthermore, the adapter ring / 200mm wafer load can be treated as a "monolithic" wafer for processing, both when introduced into and retrieved from the processing chamber. For example, this might allow a processing chamber configured for 300mm wafers to be used for processing 200mm wafers with minor or no modifications. The following will discuss... Figures 10 to 34 Various tool examples are discussed, configured to handle 200mm wafers carried by the aforementioned adapter ring, as well as possible 300mm wafers.

[0071] Figure 10 A schematic diagram of a processing chamber configured to perform semiconductor processing operations on the top side of a wafer is depicted. In such a processing chamber 1042, a load 1040 may be supported by a wafer support system 1052 located below a nozzle 1038. In this example, the load 1040 is a 200mm wafer 1002 engaged with an adapter ring 1010, similar to the examples discussed earlier. The nozzle 1038 may be connected to one or more process gas sources and may be configured to dispense one or more process gases from these sources onto the load 1040 during processing of the load 1040 while the load 1040 is supported by the wafer support system 1052. For example, the nozzle 1038 may have one or more sets of gas dispensing ports distributed on its underside; each set of gas dispensing ports may be configured to dispense one or more process gases onto the load 1040 when the one or more process gases are allowed to flow into the internal filling chamber of the nozzle 1038.

[0072] In this example, the wafer support system 1052 is a base or chuck having an upward-facing surface configured to receive and support a load 1040. In this example, the load 1040 is an adapter ring 1010 (similar to those discussed above) in which a wafer 1002 is placed. When supporting the load 1040, the wafer support system 1052 can be configured to contact the load 1040 at multiple locations within the processing chamber 1042 and outside the first cylindrical reference volume 1054a. In the depicted example, the wafer support system 1052 contacts the underside of the adapter ring 1010 across its entire underside, i.e., at a large number of locations distributed throughout the underside of the adapter ring 1010.

[0073] The processing chamber 1042 in this example is also equipped with a first lifting pin mechanism 1056a and a second lifting pin mechanism 1056b. The first lifting pin mechanism 1056a may include a set of first lifting pins 1058a connected to a first actuator 1060a, which is movable between at least a first configuration and a second configuration. The first lifting pins 1058a may have an end, for example, the uppermost portion of the first lifting pin 1058a, which is located at a first height when the first actuator 1060a is in the first configuration, and at a second height greater than the first height when the first actuator 1060a is in the second configuration.

[0074] Similarly, the second lifting pin mechanism 1056b may include a set of second lifting pins 1058b connected to a second actuator 1060b, which is movable between at least a third configuration and a fourth configuration. The second lifting pins 1058b may have an end that is located at a third height when the second actuator 1060b is in the third configuration, and that is located at a fourth height greater than the third height when the second actuator 1060b is in the fourth configuration.

[0075] As can be seen, the first lifting pin 1058a, for example, the end of the first lifting pin 1058a, is located within the second cylindrical reference volume 1054b. The diameters of both the first cylindrical reference volume 1054a and the second cylindrical reference volume 1054b are 200mm, and in this example, they are coaxial / concentric. The end of the second lifting pin 1058b, for example, can be located outside the first cylindrical reference volume 1054a and the second cylindrical reference volume 1054b, but within a 300mm diameter region centered on the first cylindrical reference volume 1054a and the second cylindrical reference volume 1054b, that is, within 50mm of the first cylindrical reference volume 1054a.

[0076] Figure 10Various other systems associated with the processing chamber 1042 are also described, such as a robotic arm 1046, which may have one or more end effectors 1048 configured to insert into and then retract from the processing chamber 1042 to facilitate the loading or unloading of wafers 1002 from the processing chamber 1042. For example, the robotic arm 1046 may be a Selective Compliant Assembly Robotic Arm (SCARA) robot or other types of robots suitable for such purposes.

[0077] Processing chamber 1042 may also engage with slit valve 1082, which may include valve actuator 1086 for moving slit valve 1084 between a first position and a second position. In the first position, slit valve 1084 seals the wafer transfer channel leading to the interior of processing chamber 1042. In the second position, slit valve 1084 does not seal the wafer transfer channel and allows insertion of end effector 1048 (or one of a plurality of end effectors 1048) into processing chamber 1042.

[0078] Figure 11 Showing Figure 10 The processing chamber 1042 is configured such that the slit valve 1084 is in a second position, thereby activating the wafer transfer channel and allowing the robotic arm 1046 to be actuated to extend the end effector 1048 into the processing chamber 1042. Before the robotic arm 1046 inserts the end effector 1048 into the processing chamber, the first lifting pin mechanism 1056a can be actuated to move the first lifting pin 1058a from a first configuration to a second configuration. In this example, when the first lifting pin mechanism 1056a is in the first configuration, the end of the first lifting pin 1058a is positioned below the upper surface of the wafer support system 1052, and then positioned above the upper surface of the wafer support system 1052 in the second configuration, thereby causing the end of the first lifting pin 1058a to contact the underside of the wafer 1002 and lift the wafer 1002 away from the adapter ring 1010. In the second configuration, the first lifting pin 1058a may have an end at a height higher than that of the end effector 1048, thereby allowing the end effector 1048 to be inserted below the wafer 1002, as shown below. Figure 11As shown. The first lifting pins 1058a can then be retracted to their position in the first configuration, thereby lowering the wafer 1002 onto the end effector 1048 and allowing the robotic arm 1046 to withdraw the end effector 1048 and the wafer 1002 supported thereon from the processing chamber 1042. The same operation can also be performed in reverse, for example, by having the robotic arm 1046 extend the end effector 1048 and the wafer 1002 supported thereon into the processing chamber 1042, then extending the first lifting pins 1058a upwards to lift the wafer 1002 from the end effector 1048, then withdrawing the end effector 1048 from the processing chamber, and then retracting the first lifting pins 1058a to their position in the first configuration, thereby placing the wafer 1002 onto the adapter ring 1010 located above the wafer support system 1052.

[0079] exist Figure 12 In the diagram, the second lifting pin mechanism 1056b is shown switched from a third configuration to a fourth configuration. In the third configuration, the end of the second lifting pin 1058b is located below the upper surface of the wafer support system 1052. In the fourth configuration, the second lifting pin 1058b extends such that its end is located above the upper surface of the wafer support system 1052. In this configuration, the load 1040—including the adapter ring 1010 and the wafer 1002—can be lifted away from the wafer support system 1052, allowing the robotic arm 1046 to move the end effector 1048 to insert it below the load 1040. The second lifting pins 1058b can then be retracted, for example, to their position as in the third configuration, to lower the load 1040 onto the end effector 1048. The robotic arm 1046 can then retract the end effector 1048 and the load 1040 from the processing chamber 1042. The same operation can also be performed in reverse to transfer the load 1040 to the processing chamber 1042 and place it on the wafer support system 1052.

[0080] Figure 13A variation of the processing chamber 1042 is described, wherein the processing chamber 1042 is equipped with a third lifting pin mechanism 1056c, which has a third actuator 1060c and a set of lifting pins 1058c. The third lifting pin mechanism 1056c can be configured such that all the third lifting pins 1058c are located outside a 300mm diameter region centered on a 200mm diameter region (within which the first lifting pin 1058a is located). Such an implementation can be used when the semiconductor processing operation performed in the processing chamber 1042 uses an edge ring or focusing ring 1092. The edge ring or focusing ring 1092 can be provided to regulate airflow and / or plasma effects near the edge of the wafer 1002. In some such implementations, the edge ring or focusing ring 1092 can be annular and can be larger than 300mm in size, and has an inner periphery that can overlap with the adapter ring 1010. Figure 14 As shown, the third lifting pin mechanism 1056 can be used to lift the edge ring or focus ring 1092 away from the load 1040. This allows the second lifting pin mechanism 1056b to be actuated to lift the load 1040 from the wafer support system 1052, thereby allowing the end effector 1048 to be inserted under the load 1040, and then the load 1040 to be lowered onto the end effector 1048 for removal from the processing chamber 1042. A similar operation performed in reverse can allow the load 1040 to be introduced into the processing chamber 1042 and placed on the wafer support system 1052.

[0081] Figures 10 to 14 Examples have focused on processing chambers where the front or top side of wafer 1002 is affected by semiconductor processing operations, but the back or bottom side of wafer 1002 is typically shielded from such processing operations by wafer support system 1052. However, the adapter ring discussed herein can also be used in semiconductor processing systems configured to perform back-side processing on wafers. In such systems, the wafer support system can be configured to support the wafer at an elevated position above a nozzle base located below the wafer. Therefore, the underside of the wafer facing the nozzle base may be exposed to process gases that may flow from the nozzle base and onto the wafer. Figures 15 to 19 An example of a semiconductor processing chamber is described, in which an adapter ring can be used and it is also configured for back-side processing operations.

[0082] Figure 15 A schematic diagram of a processing chamber 1542 is depicted, configured to perform semiconductor processing operations on the bottom or underside of a wafer. In such a processing chamber 1542, a load 1540 can be supported by a wafer support system 1552 located below a nozzle 1538. In this example, the load 1540 is a 200mm wafer 1502 engaged with an adapter ring 1510, similar to the examples discussed earlier.

[0083] In this example, the wafer support system 1552 is a base assembly comprising a nozzle base having an upward-facing surface 1568, with a plurality of gas distribution ports 1566 distributed across the surface 1568. One or more process gases can flow into the internal gas chamber of the nozzle base and then be directed upward through the gas distribution ports 1566 to the underside of a load 1540 (or, if the load 1540 is a single 300mm wafer, the underside of a 300mm wafer), thereby subjecting the underside of the load 1540 to semiconductor processing operations. The base assembly may also include a plurality (e.g., three) of support pillars 1570, which can be positioned at spaced locations around the periphery of the nozzle base. As shown in this example, at least a portion of each support pillar 1570 can extend radially inward to be positioned within a cylindrical reference volume 1574 of the processing chamber (see [link to example]). Figure 19 The support post 1570 is positioned within and contacts and supports the lower side of the load 1540 at a location defining a reference plane 1572, which is configured above and vertically offset from the upward-facing surface 1568. The portion of the support post 1570 configured to contact and support the load 1540 can be positioned outside the first cylindrical reference volume 1554a with a diameter of 200 mm. The load 1540 can be supported above the upward-facing surface 1568 such that a considerable gap, for example, approximately a few millimeters to tens of millimeters, exists between the lower side of the load 1540 and the upward-facing surface 1568. In some implementations, the support posts 1570 can be configured differently; for example, they can be connected to structures different from the nozzle base. For example, the support post 1570 (or equivalent feature) can alternatively extend downward from the nozzle 1538. It is also understood that features different from the support post can be used as support features to support the load 1540 or the 300 mm wafer. For example, a collar may be used instead, which extends around the entire outer periphery of the load 1540 and is configured to support the load 1540 at an elevated position relative to the upward-facing surface 1568.

[0084] For example, nozzle 1538 may have one or more sets of gas distribution ports distributed on its underside; each set of gas distribution ports may be configured to distribute one or more process gases onto load 1540 when these process gases are allowed to flow into nozzle 1538. Nozzle 1538 may be connected to one or more process gas sources and may be configured to distribute one or more process gases from these gas sources onto load 1540 during processing of load 1540, when load 1540 is supported by wafer support system 1552. For back-side processing operations, nozzle 1538 may be allowed to flow process gases that do not react with other process gases that may flow from nozzle base, and / or may be allowed to flow inert gases. For example, during such back-side processing operations, nozzle 1538 may be allowed to flow nitrogen or argon. This non-reactive gas can protect the top side of the shielded load 1540 from the process gases flowing from the nozzle base, thereby confining processing operations such as deposition or etching to the back side of the load 1540 while protecting the top side of the wafer from unwanted processing operations.

[0085] In this example, the processing chamber 1542 is also equipped with a first lifting pin mechanism 1556a and a second lifting pin mechanism 1556b. The first lifting pin mechanism 1556a may include a set of first lifting pins 1558a connected to a first actuator 1560a, which is movable between at least a first configuration and a second configuration. The first lifting pins 1558a may have ends, for example, the uppermost portion of the first lifting pin 1558a, which are located at a first height when the first actuator 1560a is in the first configuration, and at a second height greater than the first height when the first actuator 1560a is in the second configuration.

[0086] Similarly, the second lifting pin mechanism 1556b may include a set of second lifting pins 1558b connected to a second actuator 1560b, which is movable between at least a third configuration and a fourth configuration. When the second actuator 1560b is in the third configuration, the second lifting pins 1558b may have ends at a third height, and when the second actuator 1560b is in the fourth configuration, these ends may be at a fourth height, which is greater than the third height.

[0087] As can be seen, the first lifting pin 1558a, for example, its end, is positioned within the second cylindrical reference volume 1554b. Both the first and second cylindrical reference volumes 1554a and 1554b have a diameter of 200 mm, and in this example, they are coaxial / concentric with each other and with the cylindrical reference volume 1574 of the processing chamber. The second lifting pin 1558b, for example, its end, can be positioned outside the first and second cylindrical reference volumes 1554a and 1554b, but within the cylindrical reference volume 1574 of the processing chamber, that is, within 50 mm of the first cylindrical reference volume 1554a.

[0088] Figure 15 Various other systems associated with the processing chamber 1542 are also described, such as a robotic arm 1546, which may have one or more end effectors 1548 configured to insert into and then withdraw from the processing chamber 1542 to facilitate the loading or unloading of the wafer 1502 into or from the processing chamber 1542. For example, the robotic arm 1546 may be a Selective Compliant Assembly Robotic Arm (SCARA) robot or other types of robots that may be used for such purposes.

[0089] Processing chamber 1542 may also engage with slit valve 1582, which may include valve actuator 1586 for moving slit valve 1584 between a first position, in which slit valve 1584 seals the wafer transfer passage leading to the interior of processing chamber 1542, and in the second position, slit valve 1584 does not seal the wafer transfer passage and allows insertion of end effector 1548 (or one of a plurality of end effectors 1548) into processing chamber 1542.

[0090] Figure 16 show Figure 15The processing chamber 1542 is configured such that the slit valve 1584 is in a second position, thereby activating the wafer transfer channel and allowing the robotic arm 1546 to be actuated to extend the end effector 1548 into the processing chamber 1542. Before the robotic arm 1546 inserts the end effector 1548 into the processing chamber, the first lifting pin mechanism 1556a can be actuated to move the first lifting pin 1558a from a first configuration to a second configuration. In this example, when the first lifting pin mechanism 1556a is in the first configuration, the end of the first lifting pin 1558a is positioned below the reference plane 1572 of the wafer support system 1552, for example, below the upward surface 1568, and then, in the second configuration, is positioned above the reference plane 1572 of the wafer support system 1552, thereby causing the end of the first lifting pin 1558a to contact the underside of the wafer 1502 and lift the wafer 1502 away from the adapter ring 1510. The adapter ring 1510 can be maintained by the support post 1570, for example, through contact between multiple portions of the support post 1570 extending into the cylindrical reference volume 1574 of the processing chamber. In the second configuration, the first lifting pin 1558a can have an end located at a height above the height of the end effector 1548, thereby allowing the end effector 1548 to be inserted below the wafer 1502, such as... Figure 16 As shown. The first lifting pins 1558a can then be retracted into their position in the first configuration, thereby lowering the wafer 1502 onto the end effector 1548 and allowing the robotic arm 1546 to withdraw the end effector 1548 and the wafer 1502 supported thereon from the processing chamber 1542. The same operation can also be performed in reverse, for example, by having the robotic arm 1546 extend the end effector 1548 and the wafer 1502 supported thereon into the processing chamber 1542, then extending the first lifting pins 1558a upward to lift the wafer 1502 from the end effector 1548, then withdrawing the end effector 1548 from the processing chamber, and then retracting the first lifting pins 1558a into their position in the first configuration, thereby placing the wafer 1502 onto the adapter ring 1510 located on the wafer support system 1552.

[0091] Figure 17 and 18 It shows, as Figure 15 and 16 The same processing chamber 1542 is shown, but the load 1540 of the 200mm wafer 1502, which was previously engaged with the adapter ring 1510, is replaced by a single 300mm wafer 1502'. It can be seen that both 200mm and 300mm wafers can be processed in such a system without changing the tooling mechanism except for using the adapter ring 1510.

[0092] The adapter ring 1510 discussed above can also be used in systems that use carrier rings sized to support wafers with a diameter of 300 mm. Figure 19 An example of a modified version of the processing chamber 1542 discussed above is described, wherein instead of having a portion extending below the adapter ring 1510, the support pillar 1570 is entirely located outside the cylindrical reference volume 1574 of the processing chamber, which is coaxial with the first cylindrical reference volume 1554a and has a diameter of 300 mm. The load 1540 in this example includes a carrier ring 1532, an adapter ring 1510, and a wafer 1502. The outer diameter of the adapter ring 1510 can be 300 mm, as shown in the previous example discussed above, and can support a 200 mm diameter wafer 1502. Alternatively, the load 1540 may include the carrier ring 1532 and a 300 mm diameter wafer 1502 without the adapter ring 1510. Regardless, the carrying ring 1532 can be an element of the load 1540, contacting the support post 1570 and being contacted by the second lifting pin 1558 of the second lifting pin mechanism 1556b, and lifted away from the support post 1570 to facilitate the transport of the carrying ring 1532 into and out of the processing chamber 1542. In an alternative design, the second lifting pin mechanism 1556b may have a second lifting pin 1558b, for example, located radially inward in the position shown, to contact the underside of the adapter ring 1510. In some such implementations, a third lifting pin mechanism (similar to the one described above) may be included. Figure 13 and 14 The third lifting mechanism 1556c discussed above allows the adapter ring 1510 and wafer 1502 to be lifted off the carrier ring and then removed from the processing chamber 1542 (or placed into the processing chamber 1542 and then lowered onto the carrier ring 1532).

[0093] In the example discussed above, the processing chamber involved is designed to include a lift pin mechanism capable of providing lifting capability for 200mm wafers and loads larger than 200mm (e.g., loads that may require the lift pin to contact them at a location within an annular region with a diameter between 200mm and 300mm). However, in other implementations, the processing chamber may simply be equipped with a lift pin mechanism of the latter type, for example, a lift pin mechanism configured to contact the load at a location within an annular region with a diameter between 200mm and 300mm, and may not include any lift pin mechanism configured to contact the load at a location within the 200mm inner diameter of that annular region. In such an implementation, the first lift pin mechanism configured to contact the load at a location within a first cylindrical region may alternatively be placed at another location outside the processing chamber.

[0094] Figures 20 to 30A schematic diagram of a semiconductor processing tool is shown, configured to facilitate the processing of 200mm wafers in a processing chamber configured to process 300mm wafers.

[0095] like Figure 20 As shown, a semiconductor processing tool may include a processing chamber 2042 connected to a secondary chamber 2044 via a transfer chamber 2090. In this example, the secondary chamber 2044 is a loading lock 2088, i.e., a chamber used much like an airlock, allowing the wafer to switch between a low-pressure environment (e.g., typically seen in semiconductor processing chambers) and a higher-pressure environment (e.g., at standard atmospheric pressure). The secondary chamber 2044 and the transfer chamber 2090 may be connected via a first wafer transfer channel passing through a first slit valve 2082a, which is inserted between the secondary chamber 2044 and the transfer chamber 2090. A second wafer transfer channel may be available from the secondary chamber 2044 to a location that may be at or near atmospheric pressure, such as a device front-end module (EFEM). A second slit valve 2082b may be used to seal the wafer transfer channel from the secondary chamber 2044 to, for example, the EFEM. The third wafer transfer channel can connect the processing chamber 2042 to the transfer chamber 2090 and can be sealed by a corresponding third slit valve 2082c. Each wafer transfer channel can be sized to allow wafers to move through the wafer transfer channels when they are moved between multiple chambers.

[0096] The first slit valve 2082a may be equipped with a first gate 2084a, which can move between a corresponding first position and a corresponding second position via a first actuator 2086a in response to receiving one or more control signals. Similarly, the second slit valve 2082b may be equipped with a second gate 2084b, which can move between a corresponding first position and a corresponding second position via a second actuator 2086b in response to receiving one or more control signals, and the third slit valve 2082c may also be equipped with a third gate 2084c, which can move between a corresponding first position and a corresponding second position via a third actuator 2086c in response to receiving one or more control signals. Each slit valve 2082, when in its respective first position, can seal its associated corresponding wafer transfer channel, and when in its second position, can leave the wafer transfer channel unsealed (and allow the wafer to pass through the wafer transfer channel). It is understood that, for clarity, for a given slit valve 2082, the first and second positions of the gate 2084 can be referenced by different ordinal indicators, such as the third and fourth positions, the fifth and sixth positions, etc., to distinguish them from the first and second positions of another slit valve 2082 when necessary.

[0097] For example, processing chamber 2042 can be similar to those discussed above, for example, configured for front-side wafer processing or back-side wafer processing. In this example, the processing chamber 2042 shown is configured for back-side wafer processing operations and includes a wafer support system 2052, which is a base assembly including a nozzle base with an internal gas chamber leading to a plurality of gas distribution ports arranged on the upper surface of the nozzle base. As previously described, the base assembly may include a plurality of support pillars configured to support a load 2040 including an adapter ring 2010 and a wafer 2002. Portions of the support pillars may extend into a cylindrical reference volume 2074a of the processing chamber with a diameter of 300 mm to support the adapter ring 2010 of the load 2040, which may also have a diameter of 300 mm. During wafer processing operations, one or more process gases can be allowed to flow through the internal filling chamber, exit through the gas distribution port of the nozzle base, and flow upward toward the underside of the load 2040.

[0098] Processing chamber 2042 may also include a nozzle 2038, which may be located above wafer support system 2052. The nozzle 2038 may similarly include multiple gas distribution ports for distributing one or more process gases to the top side of the entire load during wafer processing operations. For example, as previously described, one or more process gases may be one or more gases that do not react with one or more process gases flowing through the gas distribution ports of the spray base. In some examples, one or more non-reactive gases may flow through the nozzle base, while other process gases may flow from the nozzle 2038 across the top side of load 2040, for example, gases that may cause deposition or etching on the top side of wafer 2002.

[0099] Figure 20 The tool may also include a first lifting pin mechanism 2056a, which includes a plurality of first lifting pins 2058a and a first actuator 2060a. The first actuator 2060a may be configured to switch between a corresponding first configuration and a corresponding second configuration in response to receiving one or more control signals. Figure 20 The tool may also include a second lifting pin mechanism 2056b, which includes a plurality of second lifting pins 2058b and a second actuator 2060b. The second actuator 2060b may be similarly configured to switch between a corresponding first configuration and a corresponding second configuration in response to receiving one or more control signals. It is understood that, for clarity and similar to the first and second positions of the slit valve 2082, the first and second configurations of a given lifting pin mechanism 2056 may be referenced by different ordinal indicators, such as, if desired, third and fourth positions, to distinguish them from the first and second positions of the other lifting pin mechanisms 2056.

[0100] The end of the second lifting pin 2058b can be positioned outside the first cylindrical reference volume 2054a but inside the cylindrical reference volume 2074a of the processing chamber, while the end of the first lifting pin 2058a can be positioned inside the second cylindrical reference volume 2054b. The first cylindrical reference volume 2054a can be positioned inside the processing chamber 2042, and the second cylindrical reference volume 2054b can be positioned inside the secondary chamber 2044. The diameter of both the first cylindrical reference volume 2054a and the second cylindrical reference volume 2054b is 200 mm.

[0101] The secondary chamber 2044 may be equipped with one or more load support features 2076, portions of which may be located within a secondary chamber cylindrical reference volume 2074b with a diameter of 300 mm. This cylindrical reference volume 2074b is coaxial with a second cylindrical reference volume 2054b and positioned within the secondary chamber 2044. In this example, the load support feature 2076 is a shelf or flange extending inward from the sidewall of the secondary chamber 2044, such that the inward edge of the shelf lies within the secondary chamber cylindrical reference volume 2074b. A load 2040 may be placed on the load support feature 2076 such that the outer periphery of the adapter ring 2010 overlaps with and is supported by the inward edge of the load support feature 2076. The load support feature 2076 may also take other forms, such as a column extending upward from the bottom of the secondary chamber 2044, another lifting pin mechanism with a lifting pin located between the cylindrical reference volume 2074b of the secondary chamber and the first cylindrical reference volume 2054a, etc.

[0102] Figure 20The tool shown may also include a first robotic arm 2046a having a first end effector 2048a located within a transfer chamber 2090. The first robotic arm 2046a may be configured to move between a corresponding first state and a corresponding second state. For example, in response to receiving one or more control signals, in the first state, the first end effector 2048a of the first robotic arm 2046a extends through a third wafer transfer channel and enters a processing chamber 2042; in the second state, the first end effector 2048a of the first robotic arm 2046a alternatively extends through the first wafer transfer channel and enters a secondary chamber 2044. The first end effector 2048a may have contact features, configured to contact and support a load 2040 within an annular region having an inner periphery with a diameter of 200 mm and an outer periphery with a diameter of 300 mm; at least in some examples, the first end effector 2048a may also be further configured not to contact the load 2040 within the inner periphery of this annular region. Therefore, the first robotic arm 2046a can be used to transfer the load 2040 from the processing chamber 2042 to the secondary chamber 2044 (and vice versa), in the same way that the first robotic arm 2046a transfers a 300mm diameter wafer between the processing chamber 2042 and the secondary chamber 2044.

[0103] The tool may also include a second robotic arm 2046b having a second end effector 2048b. The second robotic arm 2046b may also be configured to move between a corresponding first state and a corresponding second state, for example, in response to receiving one or more control signals, in a first state, the second end effector 2048b of the second robotic arm 2046b extends through the second wafer transfer channel and enters the secondary chamber 204b, and in a second state, the second end effector 2048b of the second robotic arm 2046b is retracted or withdrawn from the secondary chamber 2044. For example, the second robotic arm 2046b may be located within the EFEM, and in the second state, the second end effector 2048b may be positioned within the EFEM or at least partially within a buffer station attached to or located within the EFEM, or within a front-open wafer transfer cassette (FOUP) that can dock at the loading port of the EFEM, or at some other location outside the secondary chamber 2044. The second end effector 2048b may have contact features configured to contact and support the wafer within a circular region having an outer perimeter with a diameter of 200 mm.

[0104] Figures 21 to 30 Depicting various operational states involving wafer / load transfer operations Figure 20 Tools. For example, in Figure 20In this context, the load 2040 is shown residing in the processing chamber 2042, for example, during, immediately before, or after a wafer processing operation to be performed on the wafer 2002, which is part of the load 2040. Figure 20 In this configuration, the load 2040 is located on the support pillar of the wafer support system 2052. However, it should be understood that the load 2040 can be placed directly on the upper surface of the base in the tool, where the processing chamber is used for wafer front-side processing. Regardless, when preparing to remove the load 2040, the second lifting pin mechanism 2056b can be actuated to switch from the first configuration to the second configuration, in which the second lifting pin 2058b can... Figure 20 The nozzle base shown retracts into the wafer support system 2052 (or at least retracts so that its end is below the underside of the load 2040). In a second configuration, this causes the second lifting pin 2058b to move upward to contact the underside of the adapter ring 2010 of the load 2040, lifting the load 2040 away from the support post. In this example, this also causes the nozzle 2038 to move upward to provide additional clearance to accommodate the upward movement of the load 2040, but this may be optional depending on the specific configuration of the tooling.

[0105] exist Figure 22 In this process, by actuating the third actuator 2086c, the third door 2084c is moved from a corresponding first position (in which it seals the third wafer transfer channel) to a corresponding second position (in which the third wafer transfer channel is relatively unobstructed), thus switching the third slit valve 2082c to the open state, for example, to allow the first robotic arm 2046a to be actuated so that the first end effector 2048a extends into the processing chamber 2042, as... Figure 22 As shown. In this case, the first end effector 2048a is a blade-type end effector with a raised contact feature (not visible) that contacts the underside of the adapter ring 2010 when carrying the load 2040. However, other implementations may use other types of end effectors, such as edge-gripping end effectors configured to contact the bottom edge of the adapter ring 2010 but not contact or only minimally contact the underside of the adapter ring 2010. It can be seen that the first end effector 2048a is inserted below the raised load 2040, between the raised second lifting pins 2058b.

[0106] exist Figure 23 In the process, the second lifting pin mechanism 2056b has been actuated again, causing the second actuator 2060b to move the second lifting pin 2058b from the second configuration down to the first configuration, thereby reducing the load 2040 until the lower side of the load 2040 (more specifically, the adapter ring 2010 of the load 2040) is placed on the first end effector 2048a.

[0107] exist Figure 24 In this process, the first slit valve 2082a is switched to the open state by actuating the first actuator 2086a, causing the first door 2084a to move from a corresponding first position (where it seals the first wafer transfer channel) to a corresponding second position (where the first wafer transfer channel is relatively unobstructed). The first robotic arm 2046a has been retracted from the processing chamber 2042, and the first end effector 2048a has been extended through the first wafer transfer channel into the secondary chamber 2044, thereby moving the load 2040 supported by the first end effector 2048a from the processing chamber 2042 to the secondary chamber 2044. After the first end effector 2048a has been withdrawn from the processing chamber 2042, the third slit valve 2082c has also been switched from the open state to the closed state, for example, by actuating the third actuator 2086c, causing the third door 2084c to reseal the processing chamber 2042. However, in some implementations, the third slit valve 2082c may remain open until a new (or updated) load 2040 has been placed on the second lifting pin 2058b in subsequent operations.

[0108] exist Figure 25 In the process, the first robotic arm 2046a has already moved the first end effector 2048a downward to lower the load 2040 onto the load support feature 2076. Then, as the first end effector 2048a continues to move downward, the load support feature 2076 can lift the load 2040 off the first end effector 2048a.

[0109] exist Figure 26 In this configuration, the first robotic arm 2046a has been moved from the secondary chamber 2044 to the transfer chamber 2090 by the first end effector 2048a. Furthermore, the first slit valve 2082a has been returned from an open state to a closed state, for example, by the first actuator 2086a moving the first door 2084a from a corresponding second position back to a corresponding first position, thereby sealing the first wafer transfer channel. In the illustrated configuration, the wafer transfer channels leading to the secondary chamber 2044 are completely sealed. If the secondary chamber 2044 is a loading lock, for example, which can be used to transfer the wafer 2002 between a vacuum environment (e.g., possibly present in the transfer chamber 2090) and an atmospheric environment (e.g., possibly present within the EFEM), the pressure within the loading lock can be balanced with the pressure of the environment on the other side of the second door 2084b located by the second slit valve 2082b. For example, inert or other non-reactive gases, or potential atmospheric gases, or gases with a composition similar to or the same as the atmosphere located on the other side of the second door 2084b, may flow into the secondary chamber 2044 through one or more gas lines (not shown) to increase pressure.

[0110] exist Figure 27 In the process, the first lifting pin mechanism 2056a has been actuated, causing the first actuator 2060a to move the first lifting pin 2058a upward from the corresponding first configuration to the corresponding second configuration, thereby causing the end of the first lifting pin 2058a to contact the underside of the wafer 2002 and lift the wafer 2002 away from the adapter ring 2010. During the lifting of the wafer 2002 by the first lifting pin mechanism 2056a, the adapter ring 2010 can remain supported by the load support feature 2076.

[0111] exist Figure 28 In this process, by actuating the second actuator 2086b, the second door 2084b is moved from a corresponding first position (in which it seals the second wafer transfer channel) to a corresponding second position (in which the second wafer transfer channel is relatively unobstructed), thereby switching the second slit valve 2082b to the open state. The second robotic arm 2046b has extended the second end effector 2048b through the second wafer transfer channel and into the secondary chamber 2044, thereby inserting the second end effector 2048b into the gap between the wafer 2002 and the adapter ring 2010.

[0112] exist Figure 29 In the process, the first lifting pin mechanism has been switched from the second configuration back to the first configuration, thereby causing the first lifting pin 2058a to move downward and lower the wafer 2002 onto the second end effector 2048b.

[0113] exist Figure 30 In this process, the second robotic arm 2046b has been withdrawn from the secondary chamber 2044, and the second end effector 2048b has been retracted, thereby transferring the wafer 2002 carried by the second end effector 2048b through the second wafer transfer channel and out into an environment outside the second door 2084b, for example, into the EFEM. The second slit valve 2082b has been restored from the open state to the closed state, for example, after causing the second end effector 2048b to be withdrawn from the secondary chamber 2044, by causing the second actuator 2086b to move the second door 2084b from the corresponding second position back to the corresponding first position, thereby sealing the second wafer transfer channel.

[0114] The same procedure can be reversed to load a 200mm wafer 2002 onto the adapter ring 2010, and then transfer the resulting load 2040 into the processing chamber 2042 for processing operations. It is readily understood that such a system allows a 200mm wafer to be introduced into the depicted tool and then automatically engaged with the adapter ring 2010, enabling the 200mm wafer to be treated as a 300mm wafer for wafer handling operations within the processing chamber 2042. It should also be understood that in some cases, little or no modification may be required to enable this tool to also handle 300mm diameter wafers, thus giving the described tool dual-size wafer processing capability.

[0115] The secondary chamber discussed above uses a loading lock, but the functionality of loading / unloading 200mm wafers from the adapter ring can also be integrated into other types of secondary chambers. For the purposes of this disclosure, it can be understood that the term "secondary chamber" includes any chamber or compartment of a semiconductor processing tool that is different from a processing chamber (i.e., different from the chamber where the wafer undergoes deposition and / or etching operations). For example, in some semiconductor processing tools, the secondary chamber can be a buffer station (e.g., a chamber) attached to a transfer chamber and used to store multiple wafers in a vacuum environment before, after, or during the movement of multiple wafers to a processing chamber connected to the transfer chamber for performing one or more wafer processing operations. For example, the buffer station can serve as a "rest stop" where processed wafers can be placed for a period of time to allow the wafers to cool and / or degas before being transported to another processing chamber for subsequent processing operations or before being removed from the tool and placed in a FOUP. In some cases, the buffer station may also be heated to preheat the wafers placed therein before introducing them into the processing chamber for wafer processing operations. In some cases, the buffer station can be sealed relative to the transfer chamber by a door that can move between an open and closed configuration (similar to the slit valve discussed earlier), although the door may be larger to allow access to wafers stored at different heights within the buffer station. In other implementations, the buffer station may not have any doors separating it from the transfer chamber, essentially functioning as a recess within the transfer chamber. In some implementations, the buffer station may serve as, or alternatively as, a metrology station, for example, a station where wafers being processed within the tooling can be placed to allow one or more measurement devices to characterize one or more aspects of the wafer, such as measuring deposition thickness, wafer uniformity, etc., using one or more optical or other sensors.

[0116] It should also be understood that, in some implementations, the loading and / or unloading of the 200mm wafer into the aforementioned adapter rings to generate a load can be performed in a tool completely separate from the tool used to handle such loads. In such implementations, the components or parts associated with this loading / unloading operation may be located in this separate tool.

[0117] Figure 31a A schematic diagram of a semiconductor processing tool is shown, which has two processing chambers and two secondary chambers, all of which are connected to a transfer chamber. Figure 31a As shown, transfer chamber 3190 is connected to first secondary chamber 3144a, second secondary chamber 3144b, first processing chamber 3142a, and second processing chamber 3142b. Second secondary chamber 3144b can be used as a loading lock and connects transfer chamber 3190 to EFEM 3136. First slit valve 3182a is positioned to selectively close and seal or open a wafer transfer channel from the interior of first secondary chamber 3144a to the interior of transfer chamber 3190. Second slit valve 3182b can be similarly positioned to selectively close and seal or open another wafer transfer channel from the interior of first secondary chamber 3144a to the interior of EFEM 3136. The first processing chamber 3142a and the second processing chamber 3142b can be similarly engaged with the third slit valve 3182c and the fourth slit valve 3182d, respectively, each of which can be configured to selectively close and seal or open each wafer transfer channel from the transfer chamber 3190 to the first processing chamber 3142a and the second processing chamber 3142b.

[0118] In this example, transfer chamber 3190 includes a first robotic arm 3146a supporting a first end effector 3148a; as can be seen from the dashed outline of the first robotic arm 3146a (which represents various configurations that the first robotic arm 3146a may switch or move to), the first end effector 3148a is capable of extending into and withdrawing from the first secondary chamber 3144a, the second secondary chamber 3144b, the first processing chamber 3142a, and the second processing chamber 3142b to deliver a load or wafer to, or retrieve from, any of the first secondary chamber 3144a, the second secondary chamber 3144b, the first processing chamber 3142a, and the second processing chamber 3142b.

[0119] A second robotic arm 3146b, supporting the second end effector 3148b, is positioned within the EFEM 3136; the second robotic arm 3146b can be used to transport wafers to or remove wafers from the second secondary chamber 3144b. The second robotic arm 3146b can, for example, transfer wafers from the second secondary chamber 3144b to a FOUP (not shown), which can dock with a loading port (also not shown) of the EFEM 3136.

[0120] The first processing chamber 3142a and the second processing chamber 3142b may be equipped with a first wafer support system 3152a and a second wafer support system 3152b, respectively, which may be sized to support a 300mm wafer or a load as shown in the figure, such as a first load 3140a and a second load 3140b. The first load 3140a may include a first adapter ring 3110a and a first wafer 3102a, while the second load 3140b may include a second adapter ring 3110b and a second wafer 3102b. For example, the first load 3140a and the second load 3140b may be loads similar to those discussed above with respect to the previous figures.

[0121] The first processing chamber 3142a and the second processing chamber 3142b may also be equipped with their own lifting pin mechanisms, such as a first lifting pin mechanism and a second lifting pin mechanism, the first lifting pin mechanism including a plurality of first lifting pins 3158a and associated with the first processing chamber 3142a, and the second lifting pin mechanism including a plurality of second lifting pins 3158b and associated with the second processing chamber 3142b. It can be seen that both the first and second lifting pin mechanisms are configured such that their respective first lifting pins 3158a and 3158b are located in the annular regions corresponding to the adapter rings 3110a and 3110b, respectively. This allows the first and second lifting pin mechanisms to lift the first adapter ring 3110a and 3110b away from the first wafer support system 3152a and the second wafer support system 3152b, respectively, so as to allow the first end effector 3148a to be inserted under the first load 3140a or the second load 3140b, thereby facilitating its loading onto the first end effector 3148a (or lifting the first load 3140a or the second load 3140b away from the first end effector 3148a).

[0122] In this example, the first processing chamber 3142a and the second processing chamber 3142b can be used to process a 300mm wafer or a load 3140, which includes an adapter ring 3110 with a diameter of 300mm supporting a 200mm wafer 3102. The handling of the 300mm wafer and the load 3140 within the processing chamber 3142 may be substantially the same in terms of wafer placement, wafer recycling, etc. Since attempting to support the load 3140 by contacting the underside of the load 3140 within the inner diameter of the adapter ring 3110 may cause the adapter ring 3110 to detach from the wafer 3102 or at least misalign relative to the wafer 3102, the first end effector 3148a and the first and second lifting pins 3158a and 3158b can be configured to contact the 300mm wafer or load 3140 only at a position within an annular region with an outer diameter of 300mm and an inner diameter of 200mm.

[0123] For example, the first and second stage chambers 3144a can be buffer stations 3196 and configured to facilitate the loading / unloading of 200mm wafers 3102 to / from the self-adaptive ring 3110 for assembling / removing loads 3140. For example, as Figures 31b to 31d As more fully shown, the first secondary chamber 3144a may include one or more sets of one or more load support features 3176 (e.g., 3176a, 3176b, 3176c, etc.). At least a portion of each load support feature 3176 may extend into the first secondary chamber cylindrical reference volume (represented by the larger dashed circle within the first secondary chamber 3144a) with a diameter of 300 mm. Thus, when a 300 mm wafer or load 3140 is placed into the first secondary chamber cylindrical reference volume, the portion of the load support feature 3176 extending into the first secondary chamber cylindrical reference volume may extend below the outer edge portion of the 300 mm wafer or load 3140, thereby allowing a portion of the load support feature 3176 to contact and support the underside of the 300 mm wafer or load 3140 from below.

[0124] like Figure 31a As shown, one or more load-bearing features in each group include two opposing flange portions extending outward from the sidewall of the first secondary chamber 3144a (or some other structure located on the opposite side of the cylindrical reference volume of the first secondary chamber). However, in other implementations, one or more load-bearing features 3176 in each group may include a single load-bearing feature 3176, for example, a continuous shelf extending along portions of the two opposing sidewalls of the first secondary chamber 3144a, wherein the two depicted load-bearing features 3176 extend from there and along the rear wall of the first secondary chamber 3144a. Figure 31a The rear wall of the first and second secondary chamber 3144a is shown as a semi-circular outline, but in some implementations it may also be a flat or faceted extension.

[0125] In the example depicted, such as Figures 31b to 31d As shown, there are multiple sets (e.g., 15, 20, 25, 30, etc.) of one or more load support features 3176, wherein each set of one or more load support features 3176 is located at a different height within the first secondary chamber 3144a.

[0126] exist Figures 31b to 31d There are eighteen groups of one or more load support features 3176, of which the bottom nine groups of one or more load support features 3176j, 3176k, 3176l, etc. are shown as supporting adapter rings 3110j, 3110k, 3110l, etc., and the top nine groups of one or more load support features 3176a, 3176b, 3176c, etc. are shown as supporting loads 3140a, 3140b, 3140c, etc. As shown in the figure, loads 3140a to 3140i respectively include adapter rings 3110a to 3110i and 200mm wafers 3102a to 3102i, and adapter rings 3110j to 3110r can become corresponding loads 3140 by loading the corresponding 200mm wafers 3102 into them.

[0127] like Figures 31b to 31d As shown, the third lifting pin mechanism 3156c includes a corresponding third actuator 3160c, which can be actuated to move the third lifting pin 3158c between various heights between a height above one or more load support features 3176 of the topmost group and a height below one or more load support features 3176 of the bottommost group. Figure 31b In this process, the third actuator 3160c has been actuated to move the third lifting pin 3158c to a certain height, so that the end of the third lifting pin 3158c is just below the load 3140i. Figure 31c In the process, the third actuator 3160c has been actuated to move the third lifting pin 3158c to a higher height, thereby causing the end of the third lifting pin 3158c to contact the underside of the wafer 3102i and lift it away from the adapter ring 3110i, thus providing a gap between the wafer 3102i and the adapter ring 3110i, which allows the first end effector 3148a to be inserted between the wafer 3102i and the adapter ring 3110i, as... Figure 31d As shown. Next, the first end effector 3148a can be withdrawn from the first secondary chamber 3144a by the first robotic arm 3146a while carrying the wafer 3102i, and the first robotic arm 3146a can then transport the wafer 3102i to the second secondary chamber 3144b in preparation for the final transfer to the second robotic arm 3146b in EFEM 3136.

[0128] It should be noted that the load support feature 3167 may have flange portions on opposite sides, these flange portions having innermost edges separated from each other by a gap of at least 100 mm. For example, the load support feature 3176 may be designed such that no part of the load support feature 3176 extends into the rectangular reference volume 3134, which has a bottom surface perpendicular to the central axis of the second cylindrical reference volume. The rectangular reference volume 3134 may also extend from the first secondary chamber 3144a along a first axis perpendicular to the central axis, and may have a width less than or equal to the gap along a second axis perpendicular to the first axis and the central axis; for example, in some implementations, the width of the rectangular reference volume 3134 may be 100 mm or greater. For example, a rectangular reference volume 3134 may represent a region of a first secondary chamber 3144a, which is reserved for the transport of the first end effector 3148a when it extends into and retracts from the first secondary chamber 3144a, to retrieve the wafer from and transport it to the first secondary chamber 3144a.

[0129] It should be understood that the above regarding Figures 31b to 31d The operation discussed can also be performed in reverse to load wafer 3102 onto adapter ring 3110 supported by one of the load support features 3176, to assist in the assembly of the corresponding load 3140. Proper positioning of the third lifting pin 3158c can also... Figures 31b to 31d Each of the different loads 3140 and / or adapter rings 3110 shown performs these operations, thereby allowing the assembly or disassembly of multiple loads 3140 in the first secondary chamber 3144a.

[0130] As previously mentioned, the second secondary chamber 3144b can be used as a loading lock 3188 in this example and can be equipped with a wafer support 3194. Figure 31e and 31fTop and side views of the interior of the second secondary chamber 3144b are shown. In this example, the wafer support 3194 is a fin or flange extending inward from the opposite sidewall of the second secondary chamber 3144b, and it is at least partially located within a circular region with the same diameter as the smallest wafer to be passed through the second secondary chamber 3144b. In this particular example, both 300mm and 200mm wafers can pass through the second secondary chamber 3144b, depending on the wafer being processed, and the wafer support 3194 thus extends into the 200mm diameter region, allowing the closest portions of the wafer supports 3194 to extend below and support the wafer 3102 placed on the wafer support 3194 within this circular region. The smaller dashed circle in the second secondary chamber 3144b represents the 200mm diameter wafer / circular region, while the larger dashed circle in the second secondary chamber 3144b represents the 300mm diameter wafer / circular region. Therefore, the wafer support 3194 in this example can support wafers of any size.

[0131] like Figure 31f As shown, the wafer support 3194 may, in some cases, have a stepped profile, for example, such that one or more upward-facing surfaces of each wafer support 3194 configured to support a 200mm diameter wafer are positioned at a lower height compared to one or more upward-facing surfaces of the wafer support 3194 configured to support a 300mm diameter wafer. Such an arrangement allows wafers of any size to be supported along the edge of the wafer on this wafer support 3194, but for a 300mm diameter wafer, it avoids potentially unnecessary contact between the wafer and the features used to support the 200mm wafer. Alternatively, if the wafer support 3194 is designed to contact the underside of the wafer at a location inside the wafer, then the wafer support 3194 can alternatively be designed to contact both 200mm and 300mm wafers at the same point relative to the wafer center.

[0132] The robotic arms discussed in the examples above can be any of the various types of robotic arms used in semiconductor processing tools. The example shown in the figure is a SCARA (Symptom-Compliant Assembly Robotic Arm) robot, but other types of robotic arms can also be used, including those with additional degrees of motion, additional robotic arms or robotic arm links, and / or additional end effectors. The end effector shown in the figure is a blade-type end effector that can be inserted under the wafer and has contact pads or other features that can contact the underside of the wafer from within the wafer. However, it should be understood that other types of end effectors can be used instead of this type, such as end effectors that contact the wafer along its outer edge (thus minimizing contact between the underside of the wafer and the features supporting the wafer relative to the end effector).

[0133] Figures 32 to 34 A side view of a robotic arm 3246 is depicted, which can be used in the implementations discussed above. The robotic arm 3246 typically includes multiple links connected together to form a kinematic assembly extending outward from a base that may house one or more motors for providing driving force or torque to the links. The base may also include or be connected to a vertical displacement mechanism (e.g., a linear helical drive) that can be actuated to allow the base and the robotic arm 3246 to move vertically to change the height of the end effector 3248 of the robotic arm 3246.

[0134] like Figure 32 As shown, the end effector 3248 may have multiple contact features 3250 designed to contact the underside (or edge) of the wafer supported by the robotic arm 3246. Such contact features 3250 have an upper surface that is typically higher than the other surfaces of the end effector 3248, such that the only contact between the wafer 3202 and the end effector 3248 is achieved through the top of the contact features 3250, or, if the contact features are edge-gripping features, through the other upward-facing surfaces of the contact features 3250. An end effector 3248 designed for dual-wafer-size systems may, in some cases, be configured to carry wafers with a diameter of 200 mm or 300 mm, and therefore may have such contact features 3250 located within a circular region equal to or less than the diameter of the wafer.

[0135] In some cases, an end effector 3248 designed to handle both 200mm and 300mm wafers may have a contact feature 3250 for supporting the 300mm wafer, which is different from the contact feature 3250 for supporting the 200mm wafer. Figure 33 and 34 Describe such an exemplary end effector. For example... Figure 33 and 34 As shown, a robotic arm 3346 with an end effector 3348 is depicted supported on a set of first contact features 3350a (see Figure 3346). Figure 33The first wafer 3302a is on a first wafer 3302a, and the second wafer 3302b is on a set of second contact features 3350b. In this example, the first wafer 3302a is a 200mm diameter wafer, while the second wafer 3302b is a 300mm diameter wafer. It can be seen that the first contact feature 3350a is configured to have a surface designed to contact the underside of the first wafer 3302a at a lower height compared to the surface of the second contact feature 3350b, which is designed to contact the underside of the second wafer 3302b, thereby preventing the possibility of the first contact feature 3350a potentially contacting the underside of the second wafer 3302b when the second wafer 3302b is placed on the end effector 3348. Such an end effector 3348 can also simply have a single set of contact features located within a 200mm diameter circle, and thus be able to contact and support a 200mm diameter wafer (3302a) or a 300mm diameter wafer (3302b) from below, regardless of the type of wafer the end effector 3348 is transporting. Compared to the corresponding portion of the contact features of the first wafer 3302a that contacts the wafer edge of the first wafer 3302a along the periphery of the 200mm diameter circle, for an end effector providing edge gripping features, the portion of the contact features of the second wafer 3302b that contacts the wafer edge of the second wafer 3302b will need to be positioned at a higher height along the periphery of the 300mm diameter circle.

[0136] Similarly, it is understood that while the above disclosure relates to adapter rings for 200mm diameter wafers so that they can be handled like 300mm diameter wafers in apparatuses designed for processing 300mm wafers, the same concept can, for example, be applied to adapter rings that can also be coupled to 150mm diameter wafers. The annular portion of such an adapter ring can alternatively have an annular portion with an inner diameter greater than 150mm and less than or equal to 156mm, instead of an annular portion with an inner diameter greater than 200mm and less than or equal to 206mm. The semiconductor processing tool for processing the 150mm wafer coupled to this adapter ring can be designed in a manner similar to that discussed above for 200mm wafer processing, but the diameter of this cylindrical reference volume (or similar) can alternatively be 150mm, instead of a cylindrical reference volume with a diameter of 200mm.

[0137] It is understood that the example semiconductor processing tool discussed above may be equipped with or connected to one or more controllers, which can be configured to control various functions associated with this semiconductor processing tool, such as raising and lowering of lifting pins and / or movement of a robotic arm and / or actuation of a slit valve. Depending on the processing requirements and / or system type, the controller may be programmed to control any procedures disclosed herein, such as: moving a load between processing chambers, loading / unloading a wafer onto / from an adapter ring, transporting a load and / or wafer between chambers, performing measurements on a wafer placed in a metrology station, detecting one or more characteristics of the wafer using one or more sensors, and so on.

[0138] In a broad sense, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits can include chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions can be instructions sent to the controller in the form of various individual settings (or program files), which define operating parameters for performing a specific process on or for a semiconductor wafer or system. In some examples, operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silica, surfaces, circuits, and / or wafer dies.

[0139] In some implementations, the controller may be part of or coupled to a computer integrated with, coupled to, or otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or be all or part of a fab host system, allowing remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance criteria of multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool, to which the controller is configured to interface with or control the tool. Therefore, as described above, a controller can be distributed, for example, by comprising one or more discrete controllers networked together and operating toward a common purpose (such as the process and control described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on-site communicating with one or more integrated circuits remotely (e.g., at the platform level or as part of a remote computer), which together control the process on-site.

[0140] Without limitation, exemplary tools according to this disclosure may include, but are not limited to, semiconductor processing tools having: plasma etching chambers or modules, deposition chambers or modules, rotary rinsing chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfering edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, orbital chambers or modules, and any other semiconductor processing systems that may be associated with or used for the manufacture and / or preparation of semiconductor wafers.

[0141] As described above, depending on one or more processing steps to be performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the plant, a host computer, another controller, or tools used in the transport of materials to and from the tool location and / or loading port in the semiconductor manufacturing plant.

[0142] Any ordinal designations used in this disclosure and claims (if any), such as (a), (b), (c)... or (1), (2), (3)... or similar, should be understood not to express any particular order or sequence unless such order or sequence is expressly indicated. For example, if there are three steps labeled (i), (ii), and (iii), it should be understood that the steps may be performed in any order (or even simultaneously, if there are no other restrictions), unless otherwise specified. For example, if step (ii) involves the operation of an element produced in step (i), then step (ii) can be considered to occur at some point after step (i). Similarly, if step (i) involves the operation of an element produced in step (ii), it should be understood to be the opposite. It should also be understood that the use of the ordinal designation “first” (e.g., “first article”) herein should not be construed as implying or inherently suggesting that there must be a “second” case (e.g., “second article”).

[0143] It should be understood that the phrases “for each of one or more items,” “for each of one or more items,” etc., if used herein, include both single-item groups and multi-item groups; that is, the use of the phrase “for each” means that it is used in programming languages ​​to refer to each item in any group of items referenced. For example, if the group of items referenced is a single item, “each” will refer only to that single item (although the dictionary definition of “each” often defines the term as “each of two or more things”), and does not mean that there must be at least two of these items. Similarly, the terms “set” or “subset” should not be considered by themselves to necessarily cover multiple items—it should be understood that a set or subset may cover only one or more members (unless the context indicates otherwise).

[0144] Unless otherwise specified, when the term “between” is used in conjunction with a range of numbers as used herein, it should be understood to include both the beginning and end of the range. For example, “between 1 and 5” should be understood to include the numbers 1, 2, 3, 4, and 5, and not just the numbers 2, 3, and 4.

[0145] The term "operably connected" should be understood to refer to a state in which two components and / or systems are directly or indirectly connected so that, for example, at least one component or system can control the other. For example, a controller can be described as operably connected to a resistance heating unit, comprising a controller connected to a sub-controller of the resistance heating unit, the sub-controller being electrically connected to a relay configured to controllably connect or disconnect the resistance heating unit from a power source capable of supplying electrical power to the resistance heating unit to produce a desired degree of heating. Because current is involved, the controller itself may not be able to directly supply such power to the resistance heating unit, but it should be understood that the controller is still operably connected to the resistance heating unit.

[0146] For the purposes of this disclosure, the term "fluid connection" is used in the context of volumes, air chambers, orifices, etc., which may be connected to each other directly or through one or more intermediate components or volumes to form a fluid connection, similar to the term "electrical connection" used in the context of components connected together to form an electrical connection. However, in the context of the first and second channel segments discussed in this application, it will be understood that when reference is made to the fluid connection of such a channel segment with other channel segments, such fluid connection should be understood as a direct coupling between these channel segments, for example, the end of such a channel segment being directly connected to the end of other channel segments (rather than being connected to such other channel segments via one or more other intermediate channel segments). The term "fluid insertion" (if used) can be used to refer to a component, volume, chamber, or orifice that is fluidly connected to at least two other components, volumes, chambers, or orifices such that fluid flowing from one of those other components, volumes, chambers, or orifices to another of those components, volumes, chambers, or orifices will first flow through the "fluid-inserted" component and then reach the other of those components, volumes, chambers, or orifices. For example, if a pump is fluidly inserted between a reservoir and an outlet, fluid flowing from the reservoir to the outlet will first flow through the pump and then reach the outlet. The term "fluid adjacency" (if used) refers to the placement of one fluid element relative to another fluid element such that no possible structure could be fluidly inserted between the two elements that could interrupt the fluid flow between the two fluid elements. For example, in a flow path having a first valve, a second valve, and a third valve arranged sequentially along it, the first valve is fluid adjacent to the second valve, the second valve is fluid adjacent to both the first and third valves, and the third valve is fluid adjacent to the second valve.

[0147] It should be understood that the examples and implementations described herein are for illustrative purposes only, and various modifications or variations will arise in the minds of those skilled in the art based on them. Although various details have been omitted for clarity, various design alternatives may be implemented. Therefore, the examples presented herein are to be considered illustrative rather than restrictive, and this disclosure is not limited to the details set forth herein, but rather can be modified within the scope of this disclosure.

[0148] It should be understood that while the above disclosure focuses on one or more specific exemplary implementations, it is not limited to the examples discussed, but can also be applied to similar variations and mechanisms, and such similar variations and mechanisms are also considered to fall within the scope of this disclosure.

Claims

1. An apparatus comprising: Semiconductor processing room; A wafer support system configured to support a load by contacting a load located within the semiconductor processing chamber at at least a plurality of locations located outside a first cylindrical reference volume within the semiconductor processing chamber; as well as The first lifting pin mechanism includes a plurality of first lifting pins and one or more first actuators, wherein: The one or more first actuators are configured to switch between a first configuration and a second configuration. The first lifting pin mechanism is configured to position the end of the first lifting pin at a first height when in the first configuration, and to position the end of the first lifting pin at a second height greater than the first height when in the second configuration. The end of the first lifting pin is positioned within the second cylindrical reference volume, and Both the first cylindrical reference volume and the second cylindrical reference volume have a diameter of 200 mm.

2. The apparatus according to claim 1, wherein: The wafer support system is a base assembly having: a) an upper surface on which a plurality of gas distribution ports are distributed; and b) a plurality of support pillars extending upward to a reference plane disposed above and vertically offset upward therefrom the upper surface.

3. The apparatus according to claim 2, wherein: At least a portion of the support column is positioned within a cylindrical reference volume of the processing chamber, coaxial with the first cylindrical reference volume, and The diameter of the cylindrical reference volume of the processing chamber is 300 mm.

4. The apparatus of claim 3, further comprising the load, wherein: The load comprises a 200mm diameter wafer and a 300mm adapter ring. The 300mm adapter ring has an annular portion, which has a first side, a second side opposite to the first side, an outer diameter of 300mm ± 1mm, and an inner diameter greater than 200mm and less than or equal to 206mm. The wafer is embedded within the annular portion and supported by the adapter ring.

5. The apparatus according to claim 2, wherein: The support column is completely positioned outside the cylindrical reference volume of the processing chamber, which is coaxial with the first cylindrical reference volume. The diameter of the cylindrical reference volume of the processing chamber is 300 mm. The load includes a carrier ring, an adapter ring, and a wafer. The bearing ring is configured to support the adapter ring. The adapter ring is configured to support the wafer, and The support column is configured to support the load-bearing ring.

6. The apparatus according to any one of claims 1 to 5, wherein: The first lifting pin mechanism is configured such that the end of the first lifting pin is positioned within the semiconductor processing chamber, and The first cylindrical reference volume and the second cylindrical reference volume are coaxial with each other, such that the end of the first lifting pin is also positioned within the first cylindrical reference volume.

7. The apparatus of claim 6, further comprising a second lifting pin mechanism, the second lifting pin mechanism comprising a plurality of second lifting pins and one or more second actuators, wherein: The one or more second actuators are configured to switch between a third configuration and a fourth configuration. The second lifting pin mechanism is configured to position the end of the second lifting pin at a third height when in the third configuration, and to position the end of the second lifting pin at a fourth height greater than the third height when in the fourth configuration. The end of the second lifting pin is positioned outside the first cylindrical reference volume and within a radial distance of 50 mm from the first cylindrical reference volume.

8. The apparatus according to any one of claims 1 to 5, further comprising a secondary chamber separated from the semiconductor processing chamber, wherein the first lifting pin mechanism is configured such that the end of the first lifting pin is positioned within the secondary chamber.

9. The apparatus according to claim 8, wherein: The secondary chamber includes one or more sets of one or more load-supporting features, wherein the one or more sets of one or more load-supporting features include one or more load-supporting features of the first set. At least a portion of each load support feature in one or more of the groups extends into the secondary chamber cylindrical reference volume, which is located within the secondary chamber and coaxial with the second cylindrical reference volume, and The diameter of the cylindrical reference volume of the secondary chamber is 300 mm.

10. The apparatus of claim 9, further comprising a first robotic arm configured to move between a first state and a second state, wherein in the first state a first end effector of the first robotic arm extends into the semiconductor processing chamber, and in the second state the first end effector of the first robotic arm extends into the secondary chamber, wherein the first end effector has a contact feature configured to contact and support the load within an annular region having an inner periphery with a diameter of 200 mm and an outer periphery with a diameter of 300 mm, and further configured not to contact the load within the inner periphery of the annular region.

11. The apparatus of claim 10, further comprising a second robotic arm configured to move between a third state and a fourth state, wherein in the third state a second end effector of the second robotic arm extends into the secondary chamber, and in the fourth state the second end effector of the second robotic arm retracts from the secondary chamber, wherein the second end effector of the second robotic arm has a contact feature configured to contact and support the wafer within a circular region having an outer perimeter having a diameter of 200 mm.

12. The apparatus according to claim 11, wherein: The secondary chamber is a locking mechanism and includes: a first wafer transfer channel through which the first end effector extends when the first robotic arm is in the second state; and a second wafer transfer channel through which the second end effector extends when the second robotic arm is in the third state; and The first wafer transfer channel is different from the second wafer transfer channel.

13. The apparatus of claim 12, further comprising a first slit valve and a second slit valve, wherein: The first slit valve is configured to switch between a first position and a second position in response to receiving one or more first signals. The second slit valve is configured to switch between a third position and a fourth position in response to receiving one or more second signals. The first slit valve seals the first wafer transfer channel when in the first position, and does not seal the first wafer transfer channel when in the second position. The second slit valve seals the second wafer transfer channel in the third position and does not seal the second wafer transfer channel in the fourth position.

14. The apparatus of claim 12, further comprising a transfer chamber, wherein: The transfer chamber is connected to both the semiconductor processing chamber and the secondary chamber. The first robotic arm is located inside the transfer chamber, and The second robotic arm is located outside the transfer chamber.

15. The apparatus of claim 10, further comprising a transfer chamber, wherein: The transfer chamber is connected to both the semiconductor processing chamber and the secondary chamber, and The secondary chamber is a buffer station.

16. The apparatus of claim 15, wherein the secondary chamber is not separated from the transfer chamber by a valve or door.

17. The apparatus according to claim 15, wherein: The group or multiple groups of one or more load support features include multiple groups of one or more load support features, and One or more load-bearing features in each group are positioned at different heights within the secondary indoor space.

18. The apparatus of claim 15, wherein at least one or more load support features of the first group comprise two flange portions disposed adjacent to opposite inner sides of the secondary chamber and having innermost edges separated from each other by a gap of at least 100 mm.

19. The apparatus of claim 18, wherein one or more load support features of the first group extend without any portion into a rectangular reference volume having a bottom surface perpendicular to the central axis of the second cylindrical reference volume, wherein the rectangular reference volume extends outward from the secondary chamber along a first axis perpendicular to the central axis and has a width less than or equal to the gap along a second axis perpendicular to the first axis and the central axis.

20. The apparatus of claim 15, further comprising a loading lock connected to the transfer chamber, wherein: The loading lock includes one or more first contact features and one or more second contact features, each first contact feature being positioned within an annular region having an outer diameter of 300 mm and an inner diameter of 200 mm. Each second contact feature is positioned within a circular area, which is centered on the annular area and has a diameter of 200 mm. Each first contact feature has a top portion that is higher than the top portion of each second contact feature.

21. An adapter ring, the adapter ring comprising: The annular portion has a first side, a second side opposite to the first side, an outer diameter of 300 mm ± 1 mm, and an inner diameter greater than 200 mm and less than or equal to 206 mm. One or more wafer support features, wherein: The first side and the second side define the thickness of the annular portion between 0.5 mm and 1 mm. Each wafer support feature extends radially inward from the inner periphery of the annular portion, defined by the inner diameter of the annular portion. At least a portion of each wafer support feature extends into a 200mm diameter region positioned on the annular portion, and The one or more wafer support features are adjacent to the annular portion.

22. The adapter ring of claim 21, wherein the portion of each wafer support feature extending into a 200 mm diameter region disposed on the annular portion is recessed from the first side of the annular portion by 0.25 mm to 1.5 mm.

23. The adapter ring of claim 21, wherein no portion of the adapter ring extends beyond a first reference plane coplanar with the first side and a second reference plane coplanar with the second side.

24. The adapter ring of claim 21, wherein no portion of the adapter ring extends beyond the outer periphery of the annular portion defined by the outer diameter of the annular portion.

25. The adapter ring according to any one of claims 21 to 24, wherein the one or more wafer support features comprise an annular flange having an inner periphery with a diameter less than 200 mm and centered on the annular portion.

26. The adapter ring according to any one of claims 21 to 24, wherein the one or more wafer support features comprise a plurality of tabs extending radially inward from the inner periphery of the annular portion.

27. The adapter ring of claim 26, wherein the one or more wafer support features further comprises an annular flange having an inner periphery with a diameter less than 200 mm and centered on the annular portion.

28. The adapter ring of claim 26, further comprising an annular flange centered on the annular portion and having an inner periphery with a diameter greater than 200 mm and smaller than the inner diameter of the annular portion.

29. The adapter ring of claim 27, further comprising a notched shielding element extending radially inward from the inner periphery of the annular flange.

30. The adapter ring according to any one of claims 21 to 24, wherein the one or more wafer support features and the annular portion are made of quartz, glass, silicon, aluminum alloy, or alumina.

Images