Integrated optoelectronic device temperature performance multipath test system and method

Abstract

The present application relates to a kind of integrated optoelectronic device temperature performance multipath test system and method, the system utilizes temperature test box to regulate the temperature of the integrated optoelectronic device to be measured, and the light receiving and light emission parameters of each integrated optoelectronic device to be measured are measured by spectrometer, multi-channel optical power meter and multi-channel voltage collector.The test method is specifically as follows: by the beam splitting and coupling of the optical signal loop of the test system, the light receiving and light emission performance indicators of the device to be measured are obtained by using one temperature cycle test.Subsequently, based on the light receiving and light emission parameters of the integrated optoelectronic device to be measured at different ambient temperatures, the corrected light responsivity change rate is calculated.The corrected light responsivity value introduces the change of the light emission end of the device and its coupling effect on the light receiving end into the light responsivity value, so as to accurately reflect the comprehensive performance indicators of the device under coupling working condition, and then the integrated optoelectronic device can be more comprehensively evaluated.

Description

Technical Field

[0001] This invention relates to a multi-channel testing system and method for the temperature performance of integrated optoelectronic devices, belonging to the field of optoelectronic device testing. Background Technology

[0002] Integrated optoelectronic devices contain core components such as SLD light source chips, optical couplers / beam splitters, and photodetectors, integrating optical emission and reception functions, and have broad application prospects in integrated fiber optic gyroscopes.

[0003] The output wavelength, optical power, and optical responsivity of the device, as well as their stability during temperature variations, significantly affect the performance of the fiber optic gyroscope and the reliability of the device itself. Therefore, screening tests need to be performed on the device before installation.

[0004] However, existing testing systems can only test the optical emission or optical reception functions of devices. To complete the full functional testing of both optical emission and reception, at least two temperature cycling tests are required. Specifically, the device is placed in a temperature test chamber. First, an optical emission testing system is used to perform a temperature cycling test on the integrated optoelectronic device under test to obtain the output wavelength and optical power values. Then, an optical reception testing system is used to perform a temperature cycling test on the integrated optoelectronic device under test to obtain the photoresponsivity value. Therefore, obtaining the performance parameters of optical emission and reception requires at least two fiber optic splicing and temperature cycling tests, a complex and cumbersome process that significantly reduces testing efficiency.

[0005] Furthermore, existing testing systems can only obtain indicators such as transmitter optical power, spectral characteristics, and receiver responsivity. These indicators only reflect the basic performance of the device under a single operating condition. In actual use, devices are never in a purely optical transmitting or receiving state for extended periods. Under certain special operating conditions, rapid state switching is required, causing the two operating conditions to couple and affect the performance of the corresponding states. Therefore, evaluating the device performance under coupled operating conditions is also crucial. However, existing testing systems or methods lack any indicators that can measure the comprehensive performance of the device under coupled operating conditions. Summary of the Invention

[0006] The technical problem solved by this invention is to overcome the shortcomings of existing technologies and provide a multi-channel testing system and method for the temperature performance of integrated optoelectronic devices. This invention, by comprehensively scheduling the beam splitting and coupling of optical signal loops, can obtain the light receiving and light emitting performance indicators of the integrated optoelectronic device under test through a single temperature cycle test. Based on the light emitting and light receiving performance indicators, a corrected photoresponse change rate is calculated, thus solving the problems of low testing efficiency and inability to measure the overall performance of devices in existing systems.

[0007] The technical solution of this invention is: A multi-channel test system for the temperature performance of integrated optoelectronic devices includes: a multi-channel beam splitter, a light source, a multi-channel optical switch, a spectrometer, a multi-channel optical power meter, a multi-channel voltage acquisition unit, a temperature test chamber, and a 1-to-3 optical beam splitter; The multi-channel optical power meter and the multi-channel voltage acquisition unit each have N channel ports; the multi-channel optical switch has one common port and N+1 channel ports; the multi-channel beam splitter has one common port and N channel ports; there are a total of N 1-to-3 optical beam splitters; The temperature test chamber contains N integrated optoelectronic devices under test (IDEs). The fiber optic ports of these N IDEs are connected to the common port of each of the N 1-to-3 optical beamsplitters. The electrical output pins of these N IDEs are connected to the N channels of a multi-channel voltage acquisition unit. The first channels of each of the N 1-to-3 optical beamsplitters are connected to the N channels of the multi-channel beamsplitter. The second channels of each of the N 1-to-3 optical beamsplitters are connected to the first to Nth channels of a multi-channel optical switch. The third channels of each of the N 1-to-3 optical beamsplitters are connected to the N channels of a multi-channel optical power meter. The common port of the multi-channel beamsplitter is connected to a light source. The common port of the multi-channel optical switch is connected to a spectrometer. The temperature test chamber is used to regulate the temperature of the environment in which each integrated optoelectronic device under test is located; the spectrometer, multi-channel optical power meter, and multi-channel voltage acquisition device are used to measure the optical wavelength, optical power, and voltage values ​​of each integrated optoelectronic device under test, respectively; based on the optical wavelength, optical power, and voltage values ​​of each integrated optoelectronic device under test at different ambient temperatures, the optical wavelength change rate, optical power change rate, photoresponse change rate, and corrected photoresponse change rate of each integrated optoelectronic device under test are calculated to complete the testing of all integrated optoelectronic devices under test.

[0008] Furthermore, the specific process for testing the optical wavelength value of each integrated optoelectronic device under test is as follows: Each integrated optoelectronic device under test is powered on, and after power-on, all N integrated optoelectronic devices under test output optical signals and transmit the output optical signals to the corresponding 1-to-3 optical beam splitter; the N 1-to-3 optical beam splitters transmit the transmitted optical signals through their own second channel ports to the first to Nth channel ports of the multi-channel optical switch; the multi-channel optical switch is controlled to switch the optical path sequentially according to the order of the first to Nth channel ports, so that the first to Nth channel ports of the multi-channel optical switch are sequentially connected to their own common port optical path, thereby allowing the optical signals transmitted to the first to Nth channel ports of the multi-channel optical switch to be sequentially transmitted to the spectrometer, thereby measuring the optical wavelength value of each integrated optoelectronic device under test.

[0009] Furthermore, the specific process for measuring the optical power value of each integrated optoelectronic device under test is as follows: control the multi-channel optical switch to switch to the N+1 channel port; power on each integrated optoelectronic device under test, and after power-on, all N integrated optoelectronic devices under test output optical signals and transmit the output optical signals to the corresponding 1-to-3 optical beam splitter; the N 1-to-3 optical beam splitters transmit the transmitted optical signals through their own third channel port to the N channel ports of the multi-channel optical power meter, thereby measuring the optical power value of each integrated optoelectronic device under test.

[0010] Furthermore, the voltage values ​​of each integrated optoelectronic device under test obtained by the multi-channel voltage acquisition device include voltage values ​​with and without light.

[0011] Furthermore, the specific process for measuring the voltage values ​​with and without light for each integrated optoelectronic device under test is as follows: The first step is to turn on the light source so that it outputs a light signal with a preset light power value; The second step is to input the light signal output by the light source into the multi-channel beam splitter through the common port of the multi-channel beam splitter. The third step is that the multi-channel beam splitter divides the received optical signal into N split signals and transmits the N split signals through its own N channel ports to the first channel port of N 1-to-3 optical beam splitters. The fourth step is that after each 1-to-3 beam splitter receives the split signal, it transmits the split signal to the corresponding integrated optoelectronic device under test through its own common port. Fifth step: After receiving the split signal, each integrated optoelectronic device under test generates an optical voltage signal; The sixth step involves the N integrated optoelectronic devices under test generating photoelectric voltage signals, which are then transmitted to the corresponding channel ports of the multi-channel voltage acquisition unit through their own electrical output pins, thereby measuring the photoelectric voltage signal of each integrated optoelectronic device under test. Step 7: Turn off the light source, and each integrated optoelectronic device under test will generate a non-photoelectric voltage signal; In the eighth step, the non-light voltage signals generated by the N integrated optoelectronic devices under test are transmitted to the corresponding channel ports of the multi-channel voltage acquisition unit through their own electrical output pins, thereby measuring the non-light voltage signal of each integrated optoelectronic device under test.

[0012] Furthermore, based on the light wavelength, light power, and voltage values ​​of each integrated optoelectronic device under test at different ambient temperatures, the specific process for calculating the light wavelength change rate, light power change rate, photoresponse change rate, and corrected photoresponse change rate of each integrated optoelectronic device under test is as follows: The first step is to calculate the photoresponsivity of each integrated optoelectronic device under test at different ambient temperatures, based on the photovoltage and non-photovoltage values ​​of each device under test at different ambient temperatures. The second step is to calculate the corrected photoresponsivity values ​​of each integrated optoelectronic device under test at different ambient temperatures, based on the optical power and photoresponsivity values ​​of each device under test at different ambient temperatures. The third step involves calculating the rate of change of light wavelength, the rate of change of light power, the rate of change of light responsivity, and the rate of change of corrected light responsivity of each integrated optoelectronic device under test at different ambient temperatures, based on the light wavelength, light power, and corrected light responsivity values ​​of each device under test.

[0013] Furthermore, the formula for calculating the photoresponsivity value R of the integrated optoelectronic device under test is as follows: in, U The photoelectric voltage value of the integrated optoelectronic device under test; The voltage value of the integrated optoelectronic device under test when there is no light. The optical power value is the optical signal output from the light source after being evenly divided into N equal parts by a multi-channel beam splitter.

[0014] Furthermore, the corrected photoresponsivity value of the integrated optoelectronic device under test. The calculation formula is: in, The optical power value of the integrated optoelectronic device under test; The photoresponsivity value of the integrated optoelectronic device under test; This represents the optical power value of the integrated optoelectronic device under test at 25℃.

[0015] Furthermore, the connection method between the 1-to-3 optical beam splitter and the multi-channel beam splitter, multi-channel optical switch, and multi-channel optical power meter is the FC / APC connector connection method.

[0016] Secondly, this invention also proposes a multi-channel testing method for the temperature performance of integrated optoelectronic devices. The testing method is based on the aforementioned multi-channel testing system for the temperature performance of integrated optoelectronic devices, and the specific steps are as follows: S1, determine M preset test temperatures; the M preset test temperatures are the first preset test temperature, the second preset test temperature, ..., the Mth preset test temperature; S2, The temperature inside the temperature test chamber is adjusted to the first preset test temperature; S3, power on each integrated optoelectronic device under test. After N integrated optoelectronic devices under test are powered on, they all output optical signals and transmit the output optical signals to the corresponding 1 to 3 optical beam splitter. S4, N 1 to 3 optical beam splitters transmit the incoming optical signal through their own second channel ports to the first to Nth channel ports of the multi-channel optical switch; S5, control the multi-channel optical switch to switch the optical path sequentially from the first channel port to the Nth channel port, so that the first channel port to the Nth channel port of the multi-channel optical switch are connected to their own common port optical path in sequence, thereby allowing the optical signals transmitted to the first channel port to the Nth channel port of the multi-channel optical switch to be transmitted to the spectrometer in sequence, so as to measure the optical wavelength value of each integrated optoelectronic device under test at the first preset test temperature. S6 controls the multi-channel optical switch to switch to the N+1 channel port; S7, N 1-to-3 optical beam splitters transmit the incoming optical signal through their own third channel port to the N channel ports of the multi-channel optical power meter, thereby measuring the optical power value of each integrated optoelectronic device under test at the first preset test temperature; S8, start the light source, so that the light source outputs a light signal with a preset light power value; the light signal output by the light source is input into the multi-channel beam splitter through the common port of the multi-channel beam splitter; S9, the multi-channel beam splitter divides the received optical signal into N split signals, and transmits the N split signals through its own N channel ports to the first channel port of N 1-to-3 optical beam splitters; S10, after each 1-to-3 beam splitter receives the split signal, it transmits the split signal to the corresponding integrated optoelectronic device under test through its own common port; after each integrated optoelectronic device under test receives the split signal, it generates an optical voltage signal. S11, the photoelectric voltage signals generated by the N integrated optoelectronic devices under test are transmitted to the channel ports of the multi-channel voltage acquisition unit through their own electrical output pins, thereby measuring the photoelectric voltage signal of each integrated optoelectronic device under test at the first preset test temperature. S12, turn off the light source, and each integrated optoelectronic device under test generates a no-light voltage signal; the no-light voltage signals generated by the N integrated optoelectronic devices under test are transmitted to the corresponding channel ports of the multi-channel voltage acquisition unit through their own electrical output pins, so as to measure the no-light voltage signal of each integrated optoelectronic device under test at the first preset test temperature. S13, sequentially adjust the temperature inside the temperature test chamber to the second preset test temperature, the third preset test temperature, ..., the Mth preset test temperature. After each temperature adjustment of the temperature test chamber is completed, repeat steps S3 to S12 to obtain the light wavelength value, light power value, light voltage signal and no light voltage signal of each integrated optoelectronic device under test at the second preset test temperature, the third preset test temperature, ..., the Mth preset test temperature. S13, Based on the photoelectric voltage and non-photoelectric voltage values ​​of each integrated optoelectronic device under test at M preset test temperatures, calculate the photoresponsivity value of each integrated optoelectronic device under test at M preset test temperatures; S14. Based on the optical power and photoresponsivity values ​​of each integrated optoelectronic device under test at M preset test temperatures, calculate the corrected photoresponsivity values ​​of each integrated optoelectronic device under test at M preset test temperatures. S15. Based on the light wavelength, light power, and corrected photoresponsivity values ​​of each integrated optoelectronic device under test at M preset test temperatures, calculate the light wavelength change rate, light power change rate, photoresponsivity change rate, and corrected photoresponsivity change rate of each integrated optoelectronic device under test as a function of temperature, and thus complete the test of the integrated optoelectronic device under test.

[0017] The advantages of this invention compared to the prior art are: (1) This invention realizes the design of a combined test system by comprehensively scheduling the beam splitting and coupling of the optical signal circuit. That is, the optical receiving and optical emission performance indicators of the integrated optoelectronic device under test can be obtained through a single temperature cycle test, which greatly improves the system test efficiency and facilitates the entire test process.

[0018] (2) The modified photoresponse change rate of the present invention is used as an overall evaluation index of the integrated optoelectronic device under test. The modified photoresponse change rate is obtained based on the modified photoresponse value. The modified photoresponse value is the result of the correction of the photoresponse value based on the optical power value in the light emission index. Therefore, the modified photoresponse value introduces the changes of the device's light emitting end itself and its coupling effect on the light receiving end into the photoresponse value, so as to accurately reflect the comprehensive performance index of the device under coupling conditions.

[0019] (3) The multi-channel optical switch of the present invention has a number of channels greater than the number of integrated optoelectronic devices under test. Therefore, when measuring the optical power value of each integrated optoelectronic device under test, the multi-channel optical switch is switched to an unused channel, which can effectively avoid the interference of the optical wavelength value test circuit to the optical power value and optical responsivity value test circuit. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of an integrated optoelectronic device temperature performance multi-channel testing system according to the present invention; Figure 2 This is a test flowchart of a multi-channel test system for the temperature performance of integrated optoelectronic devices according to the present invention. Figure 3 This is a curve showing the change in light wavelength during the temperature variation of an integrated optoelectronic device temperature performance multi-channel testing system according to the present invention. Figure 4 The above is a curve showing the change in optical power during the temperature change process of an integrated optoelectronic device temperature performance multi-channel test system according to the present invention. Figure 5This is a curve showing the change in photoresponsivity of an integrated optoelectronic device during temperature variation when tested using a multi-channel testing system for the temperature performance of an integrated optoelectronic device according to the present invention. Figure 6 The image shows the corrected photoresponse curve during the temperature change process of an integrated optoelectronic device temperature performance multi-channel test system according to the present invention. Detailed Implementation

[0021] The specific embodiments of the present invention will now be described in further detail with reference to the accompanying drawings.

[0022] like Figure 1 As shown, the present invention provides an integrated optoelectronic device temperature performance multi-channel testing system, including: a multi-channel beam splitter, a light source, a multi-channel optical switch, a spectrometer, a multi-channel optical power meter, a multi-channel voltage acquisition unit, a temperature test chamber, and a 1-to-3 optical beam splitter; The multi-channel optical power meter and the multi-channel voltage acquisition unit each have N channel ports; the multi-channel optical switch has one common port and N+1 channel ports; the multi-channel beam splitter has one common port and N channel ports; there are a total of N 1-to-3 optical beam splitters; The temperature test chamber contains N integrated optoelectronic devices under test (IDEs). The fiber optic ports of these N IDEs are connected to the common port of each of the N 1-to-3 optical beamsplitters. The electrical output pins of these N IDEs are connected to the N channels of a multi-channel voltage acquisition unit. The first channels of each of the N 1-to-3 optical beamsplitters are connected to the N channels of the multi-channel beamsplitter. The second channels of each of the N 1-to-3 optical beamsplitters are connected to the first to Nth channels of a multi-channel optical switch. The third channels of each of the N 1-to-3 optical beamsplitters are connected to the N channels of a multi-channel optical power meter. The common port of the multi-channel beamsplitter is connected to a light source. The common port of the multi-channel optical switch is connected to a spectrometer. The temperature test chamber is used to regulate the temperature of the environment in which each integrated optoelectronic device under test is located; the spectrometer, multi-channel optical power meter, and multi-channel voltage acquisition device are used to measure the optical wavelength, optical power, and voltage values ​​of each integrated optoelectronic device under test, respectively; based on the optical wavelength, optical power, and voltage values ​​of each integrated optoelectronic device under test at different ambient temperatures, the optical wavelength change rate, optical power change rate, photoresponse change rate, and corrected photoresponse change rate of each integrated optoelectronic device under test are calculated to complete the testing of all integrated optoelectronic devices under test.

[0023] Furthermore, the specific process for testing the optical wavelength value of each integrated optoelectronic device under test is as follows: Each integrated optoelectronic device under test is powered on, and after power-on, all N integrated optoelectronic devices under test output optical signals and transmit the output optical signals to the corresponding 1-to-3 optical beam splitter; the N 1-to-3 optical beam splitters transmit the transmitted optical signals through their own second channel ports to the first to Nth channel ports of the multi-channel optical switch; the multi-channel optical switch is controlled to switch the optical path sequentially according to the order of the first to Nth channel ports, so that the first to Nth channel ports of the multi-channel optical switch are sequentially connected to their own common port optical path, thereby allowing the optical signals transmitted to the first to Nth channel ports of the multi-channel optical switch to be sequentially transmitted to the spectrometer, thereby measuring the optical wavelength value of each integrated optoelectronic device under test.

[0024] Furthermore, the specific process for measuring the optical power value of each integrated optoelectronic device under test is as follows: control the multi-channel optical switch to switch to the N+1 channel port; power on each integrated optoelectronic device under test, and after power-on, all N integrated optoelectronic devices under test output optical signals and transmit the output optical signals to the corresponding 1-to-3 optical beam splitter; the N 1-to-3 optical beam splitters transmit the transmitted optical signals through their own third channel port to the N channel ports of the multi-channel optical power meter, thereby measuring the optical power value of each integrated optoelectronic device under test.

[0025] Furthermore, the voltage values ​​of each integrated optoelectronic device under test obtained by the multi-channel voltage acquisition device include voltage values ​​with and without light.

[0026] Furthermore, the specific process for measuring the voltage values ​​with and without light for each integrated optoelectronic device under test is as follows: The first step is to turn on the light source so that it outputs a light signal with a preset light power value; The second step is to input the light signal output by the light source into the multi-channel beam splitter through the common port of the multi-channel beam splitter. The third step is that the multi-channel beam splitter divides the received optical signal into N split signals and transmits the N split signals through its own N channel ports to the first channel port of N 1-to-3 optical beam splitters. The fourth step is that after each 1-to-3 beam splitter receives the split signal, it transmits the split signal to the corresponding integrated optoelectronic device under test through its own common port. Fifth step: After receiving the split signal, each integrated optoelectronic device under test generates an optical voltage signal; The sixth step involves the N integrated optoelectronic devices under test generating photoelectric voltage signals, which are then transmitted to the corresponding channel ports of the multi-channel voltage acquisition unit through their own electrical output pins, thereby measuring the photoelectric voltage signal of each integrated optoelectronic device under test. Step 7: Turn off the light source, and each integrated optoelectronic device under test will generate a non-photoelectric voltage signal; In the eighth step, the non-light voltage signals generated by the N integrated optoelectronic devices under test are transmitted to the corresponding channel ports of the multi-channel voltage acquisition unit through their own electrical output pins, thereby measuring the non-light voltage signal of each integrated optoelectronic device under test.

[0027] Furthermore, based on the light wavelength, light power, and voltage values ​​of each integrated optoelectronic device under test at different ambient temperatures, the specific process for calculating the light wavelength change rate, light power change rate, photoresponse change rate, and corrected photoresponse change rate of each integrated optoelectronic device under test is as follows: The first step is to calculate the photoresponsivity of each integrated optoelectronic device under test at different ambient temperatures, based on the photovoltage and non-photovoltage values ​​of each device under test at different ambient temperatures. The second step is to calculate the corrected photoresponsivity values ​​of each integrated optoelectronic device under test at different ambient temperatures, based on the optical power and photoresponsivity values ​​of each device under test at different ambient temperatures. The third step involves calculating the rate of change of light wavelength, the rate of change of light power, the rate of change of light responsivity, and the rate of change of corrected light responsivity of each integrated optoelectronic device under test at different ambient temperatures, based on the light wavelength, light power, and corrected light responsivity values ​​of each device under test.

[0028] Furthermore, the formula for calculating the photoresponsivity value R of the integrated optoelectronic device under test is as follows: in, U The photoelectric voltage value of the integrated optoelectronic device under test; The voltage value of the integrated optoelectronic device under test when there is no light. The optical power value is the optical signal output from the light source after being evenly divided into N equal parts by a multi-channel beam splitter.

[0029] Furthermore, the corrected photoresponsivity value of the integrated optoelectronic device under test. The calculation formula is: in, The optical power value of the integrated optoelectronic device under test; The photoresponsivity value of the integrated optoelectronic device under test; The optical power value of the integrated optoelectronic device under test at 25℃ is given. The corrected optical responsivity value introduces the relationship between the output optical power value of the integrated optoelectronic device under test and the temperature, which integrates the temperature characteristics of its light reception and light emission, fits the actual application scenario of the fiber optic gyroscope, and thus better reflects the performance level of the integrated optoelectronic device under test on the fiber optic gyroscope.

[0030] Furthermore, the 1-to-3 optical beam splitter is connected to the multi-channel beam splitter, multi-channel optical switch, and multi-channel optical power meter via FC / APC connectors, which reduces the impact of reflected light on the test results.

[0031] Furthermore, in this embodiment, N is 15, meaning the entire testing system is a 15-channel testing system, capable of testing 15 integrated optoelectronic devices under test at once.

[0032] Furthermore, the integrated optoelectronic device under test is installed in a temperature test chamber using a test fixture.

[0033] Furthermore, the 1-to-3 optical beam splitter is a plug-in fiber optic splitter packaged with 1-to-3 PLC planar optical waveguide devices, with an operating wavelength of 1310nm, an insertion loss of 5.5dB, and a reflection loss of 55dB.

[0034] Furthermore, the light source is a broadband light source with low polarization characteristics in the 1310nm band.

[0035] Furthermore, the multi-channel beam splitter uses a box-type fiber optic splitter packaged with PLC planar optical waveguide devices, with an insertion loss of 13.5dB per channel.

[0036] Furthermore, the temperature test chamber is set to a range of -40℃ to +70℃, and the total optical power output of the light source is set so that the optical power Pin entering the device from the multi-channel beam splitter is 5μW.

[0037] Secondly, such as Figure 2 As shown, this invention also proposes a multi-channel testing method for the temperature performance of integrated optoelectronic devices. This testing method is based on the aforementioned multi-channel testing system for the temperature performance of integrated optoelectronic devices, and the specific steps are as follows: S1, determine M preset test temperatures; the M preset test temperatures are the first preset test temperature, the second preset test temperature, ..., the Mth preset test temperature; S2, The temperature inside the temperature test chamber is adjusted to the first preset test temperature; S3, power on each integrated optoelectronic device under test. After N integrated optoelectronic devices under test are powered on, they all output optical signals and transmit the output optical signals to the corresponding 1 to 3 optical beam splitter. S4, N 1 to 3 optical beam splitters transmit the incoming optical signal through their own second channel ports to the first to Nth channel ports of the multi-channel optical switch; S5, control the multi-channel optical switch to switch the optical path sequentially from the first channel port to the Nth channel port, so that the first channel port to the Nth channel port of the multi-channel optical switch are connected to their own common port optical path in sequence, thereby allowing the optical signals transmitted to the first channel port to the Nth channel port of the multi-channel optical switch to be transmitted to the spectrometer in sequence, so as to measure the optical wavelength value of each integrated optoelectronic device under test at the first preset test temperature. S6 controls the multi-channel optical switch to switch to the N+1 channel port; switching the multi-channel optical switch to an unused channel port can effectively avoid interference from the optical wavelength value test circuit to the optical power value and optical responsivity value test circuit. S7, N 1-to-3 optical beam splitters transmit the incoming optical signal through their own third channel port to the N channel ports of the multi-channel optical power meter, thereby measuring the optical power value of each integrated optoelectronic device under test at the first preset test temperature; S8, start the light source, so that the light source outputs a light signal with a preset light power value; the light signal output by the light source is input into the multi-channel beam splitter through the common port of the multi-channel beam splitter; S9, the multi-channel beam splitter divides the received optical signal into N split signals, and transmits the N split signals through its own N channel ports to the first channel port of N 1-to-3 optical beam splitters; S10, after each 1-to-3 beam splitter receives the split signal, it transmits the split signal to the corresponding integrated optoelectronic device under test through its own common port; after each integrated optoelectronic device under test receives the split signal, it generates an optical voltage signal. S11, the photoelectric voltage signals generated by the N integrated optoelectronic devices under test are transmitted to the channel ports of the multi-channel voltage acquisition unit through their own electrical output pins, thereby measuring the photoelectric voltage signal of each integrated optoelectronic device under test at the first preset test temperature. S12, turn off the light source, and each integrated optoelectronic device under test generates a no-light voltage signal; the no-light voltage signals generated by the N integrated optoelectronic devices under test are transmitted to the corresponding channel ports of the multi-channel voltage acquisition unit through their own electrical output pins, so as to measure the no-light voltage signal of each integrated optoelectronic device under test at the first preset test temperature. S13, sequentially adjust the temperature inside the temperature test chamber to the second preset test temperature, the third preset test temperature, ..., the Mth preset test temperature. After each temperature adjustment of the temperature test chamber is completed, repeat steps S3 to S12 to obtain the light wavelength value, light power value, light voltage signal and no light voltage signal of each integrated optoelectronic device under test at the second preset test temperature, the third preset test temperature, ..., the Mth preset test temperature. S13, Based on the photoelectric voltage and non-photoelectric voltage values ​​of each integrated optoelectronic device under test at M preset test temperatures, calculate the photoresponsivity value of each integrated optoelectronic device under test at M preset test temperatures; S14. Based on the optical power and photoresponsivity values ​​of each integrated optoelectronic device under test at M preset test temperatures, calculate the corrected photoresponsivity values ​​of each integrated optoelectronic device under test at M preset test temperatures. S15, based on the light wavelength, light power, light responsivity, and corrected light responsivity values ​​of each integrated optoelectronic device under test at M preset test temperatures, calculate the rate of change of light wavelength, light power, light responsivity, and corrected light responsivity of each integrated optoelectronic device under test with temperature change, thereby completing the test of the integrated optoelectronic device under test; wherein, the light wavelength change curve is as follows... Figure 3 As shown, the optical power variation curve is as follows: Figure 4 As shown, the light responsivity variation curve is as follows: Figure 5 As shown, the modified photoresponse change curve is as follows: Figure 6 As shown.

[0038] Furthermore, the calculation process for the corrected light responsivity change rate is as follows: select one of the preset temperatures as the reference temperature, and obtain the corrected light responsivity corresponding to the reference temperature as the reference responsivity; calculate the difference between the corrected light responsivity and the reference responsivity corresponding to each of the other preset temperatures, and divide it by the reference responsivity to obtain the single-point corrected light responsivity change rate corresponding to each of the other preset temperatures; calculate the average value of all single-point corrected light responsivity change rates as the corrected light responsivity change rate.

[0039] Based on the aforementioned system and method steps, this invention achieves the design of a combined testing system by comprehensively scheduling the beam splitting and coupling of the optical signal loop. This allows for the acquisition of the optical receiving and emission performance indicators of the integrated optoelectronic device under test (IDED) through a single temperature cycle test, significantly improving system testing efficiency and simplifying the entire testing process. Furthermore, this invention uses the corrected photoresponse variation rate as a comprehensive evaluation indicator for the IDED. The corrected photoresponse variation rate is derived from the corrected photoresponse value, which is a correction of the photoresponse value based on the optical power value in the emission index. Therefore, the corrected photoresponse value incorporates the inherent variations of the device's optical emitter and their coupling effects on the optical receiver, thus accurately reflecting the device's comprehensive performance under coupling conditions.

[0040] The parts of this invention not described in detail are common knowledge to those skilled in the art.

Claims

1. A multi-channel testing system for the temperature performance of integrated optoelectronic devices, characterized in that, include: Multi-channel beam splitter, light source, multi-channel optical switch, spectrometer, multi-channel optical power meter, multi-channel voltage acquisition unit, temperature test chamber, and 1-to-3 optical beam splitter; The multi-channel optical power meter and the multi-channel voltage acquisition unit each have N channel ports; the multi-channel optical switch has one common port and N+1 channel ports; the multi-channel beam splitter has one common port and N channel ports; there are a total of N 1-to-3 optical beam splitters; The temperature test chamber contains N integrated optoelectronic devices under test (IDEs). The fiber optic ports of these N IDEs are connected to the common port of each of the N 1-to-3 optical beamsplitters. The electrical output pins of these N IDEs are connected to the N channels of a multi-channel voltage acquisition unit. The first channels of each of the N 1-to-3 optical beamsplitters are connected to the N channels of the multi-channel beamsplitter. The second channels of each of the N 1-to-3 optical beamsplitters are connected to the first to Nth channels of a multi-channel optical switch. The third channels of each of the N 1-to-3 optical beamsplitters are connected to the N channels of a multi-channel optical power meter. The common port of the multi-channel beamsplitter is connected to a light source. The common port of the multi-channel optical switch is connected to a spectrometer. The temperature test chamber is used to regulate the temperature of the environment in which each integrated optoelectronic device under test is located; the spectrometer, multi-channel optical power meter, and multi-channel voltage acquisition device are used to measure the optical wavelength, optical power, and voltage values ​​of each integrated optoelectronic device under test, respectively; based on the optical wavelength, optical power, and voltage values ​​of each integrated optoelectronic device under test at different ambient temperatures, the optical wavelength change rate, optical power change rate, photoresponse change rate, and corrected photoresponse change rate of each integrated optoelectronic device under test are calculated to complete the testing of all integrated optoelectronic devices under test.

2. The integrated optoelectronic device temperature performance multi-channel testing system according to claim 1, characterized in that: The specific process for testing the optical wavelength value of each integrated optoelectronic device under test is as follows: Each integrated optoelectronic device under test is powered on, and after power-on, all N integrated optoelectronic devices under test output optical signals and transmit the output optical signals to the corresponding 1-to-3 optical beam splitter; the N 1-to-3 optical beam splitters transmit the transmitted optical signals through their own second channel ports to the first to Nth channel ports of the multi-channel optical switch; the multi-channel optical switch is controlled to switch the optical path sequentially according to the order of the first to Nth channel ports, so that the first to Nth channel ports of the multi-channel optical switch are sequentially connected to their own common port optical path, thereby allowing the optical signals transmitted to the first to Nth channel ports of the multi-channel optical switch to be sequentially transmitted to the spectrometer, thereby measuring the optical wavelength value of each integrated optoelectronic device under test.

3. The integrated optoelectronic device temperature performance multi-channel testing system according to claim 1, characterized in that: The specific process for measuring the optical power value of each integrated optoelectronic device under test is as follows: control the multi-channel optical switch to switch to the N+1 channel port; power on each integrated optoelectronic device under test, and after power-on, all N integrated optoelectronic devices under test output optical signals and transmit the output optical signals to the corresponding 1-to-3 optical beam splitter; the N 1-to-3 optical beam splitters transmit the transmitted optical signals through their own third channel port to the N channel ports of the multi-channel optical power meter, thereby measuring the optical power value of each integrated optoelectronic device under test.

4. The integrated optoelectronic device temperature performance multi-channel testing system according to claim 1, characterized in that: The voltage values ​​of each integrated optoelectronic device under test obtained by the multi-channel voltage acquisition device include voltage values ​​with and without light.

5. The integrated optoelectronic device temperature performance multi-channel testing system according to claim 4, characterized in that: The specific process for measuring the voltage values ​​under light and without light for each integrated optoelectronic device under test is as follows: The first step is to turn on the light source so that it outputs a light signal with a preset light power value; The second step is to input the light signal output by the light source into the multi-channel beam splitter through the common port of the multi-channel beam splitter. The third step is that the multi-channel beam splitter divides the received optical signal into N split signals and transmits the N split signals through its own N channel ports to the first channel port of N 1-to-3 optical beam splitters. The fourth step is that after each 1-to-3 beam splitter receives the split signal, it transmits the split signal to the corresponding integrated optoelectronic device under test through its own common port. Fifth step: After receiving the split signal, each integrated optoelectronic device under test generates an optical voltage signal; The sixth step involves the N integrated optoelectronic devices under test generating photoelectric voltage signals, which are then transmitted to the corresponding channel ports of the multi-channel voltage acquisition unit through their own electrical output pins, thereby measuring the photoelectric voltage signal of each integrated optoelectronic device under test. Step 7: Turn off the light source, and each integrated optoelectronic device under test will generate a non-photoelectric voltage signal; In the eighth step, the non-light voltage signals generated by the N integrated optoelectronic devices under test are transmitted to the corresponding channel ports of the multi-channel voltage acquisition unit through their own electrical output pins, thereby measuring the non-light voltage signal of each integrated optoelectronic device under test.

6. The integrated optoelectronic device temperature performance multi-channel testing system according to claim 5, characterized in that: Based on the optical wavelength, optical power, and voltage values ​​of each integrated optoelectronic device under test at different ambient temperatures, the specific process for calculating the rate of change of optical wavelength, the rate of change of optical power, the rate of change of optical responsivity, and the corrected rate of change of optical responsivity for each integrated optoelectronic device under test is as follows: The first step is to calculate the photoresponsivity of each integrated optoelectronic device under test at different ambient temperatures, based on the photovoltage and non-photovoltage values ​​of each device under test at different ambient temperatures. The second step is to calculate the corrected photoresponsivity values ​​of each integrated optoelectronic device under test at different ambient temperatures, based on the optical power and photoresponsivity values ​​of each device under test at different ambient temperatures. The third step involves calculating the rate of change of light wavelength, the rate of change of light power, the rate of change of light responsivity, and the rate of change of corrected light responsivity of each integrated optoelectronic device under test at different ambient temperatures, based on the light wavelength, light power, and corrected light responsivity values ​​of each device under test.

7. The integrated optoelectronic device temperature performance multi-channel testing system according to claim 6, characterized in that: The formula for calculating the photoresponsivity R of the integrated optoelectronic device under test is: in, U The photoelectric voltage value of the integrated optoelectronic device under test; The voltage value of the integrated optoelectronic device under test when there is no light. The optical power value is the optical signal output from the light source after being evenly divided into N equal parts by a multi-channel beam splitter.

8. The integrated optoelectronic device temperature performance multi-channel testing system according to claim 6, characterized in that: Corrected photoresponsivity value of the integrated optoelectronic device under test The calculation formula is: in, The optical power value of the integrated optoelectronic device under test; The photoresponsivity value of the integrated optoelectronic device under test; This represents the optical power value of the integrated optoelectronic device under test at 25℃.

9. A multi-channel testing system for the temperature performance of integrated optoelectronic devices according to any one of claims 1 to 8, characterized in that: The 1-to-3 optical beam splitter is connected to the multi-channel beam splitter, multi-channel optical switch, and multi-channel optical power meter via FC / APC connectors.

10. A multi-channel testing method for the temperature performance of integrated optoelectronic devices, characterized in that: The test method is implemented based on the integrated optoelectronic device temperature performance multi-channel test system according to any one of claims 1 to 9, and the specific steps are as follows: S1, determine M preset test temperatures; the M preset test temperatures are the first preset test temperature, the second preset test temperature, ..., the Mth preset test temperature; S2, The temperature inside the temperature test chamber is adjusted to the first preset test temperature; S3, power on each integrated optoelectronic device under test. After N integrated optoelectronic devices under test are powered on, they all output optical signals and transmit the output optical signals to the corresponding 1 to 3 optical beam splitter. S4, N 1 to 3 optical beam splitters transmit the incoming optical signal through their own second channel ports to the first to Nth channel ports of the multi-channel optical switch; S5, control the multi-channel optical switch to switch the optical path sequentially from the first channel port to the Nth channel port, so that the first channel port to the Nth channel port of the multi-channel optical switch are connected to their own common port optical path in sequence, thereby allowing the optical signals transmitted to the first channel port to the Nth channel port of the multi-channel optical switch to be transmitted to the spectrometer in sequence, so as to measure the optical wavelength value of each integrated optoelectronic device under test at the first preset test temperature. S6 controls the multi-channel optical switch to switch to the N+1 channel port; S7, N 1-to-3 optical beam splitters transmit the incoming optical signal through their own third channel port to the N channel ports of the multi-channel optical power meter, thereby measuring the optical power value of each integrated optoelectronic device under test at the first preset test temperature; S8, start the light source, so that the light source outputs a light signal with a preset light power value; the light signal output by the light source is input into the multi-channel beam splitter through the common port of the multi-channel beam splitter; S9, the multi-channel beam splitter divides the received optical signal into N split signals, and transmits the N split signals through its own N channel ports to the first channel port of N 1-to-3 optical beam splitters; S10, after each 1-to-3 beam splitter receives the split signal, it transmits the split signal to the corresponding integrated optoelectronic device under test through its own common port; after each integrated optoelectronic device under test receives the split signal, it generates an optical voltage signal. S11, the photoelectric voltage signals generated by the N integrated optoelectronic devices under test are transmitted to the channel ports of the multi-channel voltage acquisition unit through their own electrical output pins, thereby measuring the photoelectric voltage signal of each integrated optoelectronic device under test at the first preset test temperature. S12, turn off the light source, and each integrated optoelectronic device under test generates a no-light voltage signal; the no-light voltage signals generated by the N integrated optoelectronic devices under test are transmitted to the corresponding channel ports of the multi-channel voltage acquisition unit through their own electrical output pins, so as to measure the no-light voltage signal of each integrated optoelectronic device under test at the first preset test temperature. S13, sequentially adjust the temperature inside the temperature test chamber to the second preset test temperature, the third preset test temperature, ..., the Mth preset test temperature. After each temperature adjustment of the temperature test chamber is completed, repeat steps S3 to S12 to obtain the light wavelength value, light power value, light voltage signal and no light voltage signal of each integrated optoelectronic device under test at the second preset test temperature, the third preset test temperature, ..., the Mth preset test temperature. S13, Based on the photoelectric voltage and non-photoelectric voltage values ​​of each integrated optoelectronic device under test at M preset test temperatures, calculate the photoresponsivity value of each integrated optoelectronic device under test at M preset test temperatures; S14. Based on the optical power and photoresponsivity values ​​of each integrated optoelectronic device under test at M preset test temperatures, calculate the corrected photoresponsivity values ​​of each integrated optoelectronic device under test at M preset test temperatures. S15. Based on the light wavelength, light power, and corrected photoresponsivity values ​​of each integrated optoelectronic device under test at M preset test temperatures, calculate the light wavelength change rate, light power change rate, photoresponsivity change rate, and corrected photoresponsivity change rate of each integrated optoelectronic device under test as a function of temperature, and thus complete the test of the integrated optoelectronic device under test.

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