Relay life on-line detection method and system

Abstract

The application provides a relay life online detection method and system, relates to the technical field of data processing, and carries out statistics on the on-off switching times of each relay in a semiconductor test system to obtain accumulated switching times; when the accumulated switching times meet preset interval conditions, the contact resistance of the relay is obtained as accumulated contact resistance; if the accumulated contact resistance is less than or equal to a preset failure threshold, a detection data set is formed based on the accumulated contact resistance and the corresponding detection switching times; the life switching times of each relay are predicted according to multiple detection data sets, the current use state of each relay is determined, the current life proportion is determined according to the life switching times, and grading early warning is carried out through the current life proportion and the current use state; and the application realizes the prediction of the remaining life of the relay and the identification of the abnormal deteriorated relay under the non-stop state.

Description

Technical Field

[0001] This invention relates to data processing technology, and more particularly to a method and system for online detection of relay life. Background Technology

[0002] In the process of batch testing chips, semiconductor testing systems use relays to switch the test signal between the test instrument and the chip under test. Over a long period of repeated opening and closing, the relay contacts will gradually wear and oxidize, and their contact resistance will increase accordingly. The increase in contact resistance will directly affect the transmission quality of the test signal.

[0003] Currently, the replacement of relays in semiconductor testing systems is mainly based on the relay's rated switching count. Relays are replaced uniformly when their cumulative switching count reaches the rated count. However, the load conditions and switching frequencies of different relays at different workstations are not the same, and the actual wear process of each relay varies. The method of replacing relays based on a uniform rated switching count ignores the actual wear of individual relays. For relays that wear out quickly, their contact resistance may exceed the usable range before their cumulative switching count reaches the rated count, resulting in distorted test data. For relays that wear out slowly, they are replaced when their contact resistance is still within the usable range. The method of replacing relays based on a uniform rated switching count also fails to identify early abnormal wear of relays.

[0004] Therefore, how to predict the remaining life of individual relays and identify abnormally deteriorated relays during the operation of a semiconductor testing system has become a critical problem that urgently needs to be solved. Summary of the Invention

[0005] This invention provides a method and system for online detection of relay life, which can predict the remaining life of a single relay and identify abnormally deteriorated relays during the operation of a semiconductor testing system.

[0006] A first aspect of the present invention provides a method for online detection of relay life, comprising: The number of times each relay in the semiconductor testing system switches on and off is counted to obtain the cumulative number of switching times for the corresponding relay. When the cumulative number of switching times meets the preset interval condition, the contact resistance of the corresponding relay is obtained as the cumulative contact resistance; When the cumulative contact resistance is determined to be less than or equal to a preset failure threshold, the cumulative number of switching times corresponding to the cumulative contact resistance is obtained as the detection switching count, and a detection dataset is formed based on the cumulative contact resistance and the corresponding detection switching count; Multiple sets of test datasets are acquired to predict the number of switching cycles for each relay and determine the current usage status of each relay. The current lifespan percentage of each relay is determined based on the number of lifespan switching cycles, and a graded early warning is issued based on the current lifespan percentage and the current usage status.

[0007] Alternatively, in one possible implementation of the first aspect, The method of statistically analyzing the number of on / off switching operations of each relay in the semiconductor testing system to obtain the cumulative switching count of the corresponding relay includes: Monitor the test status of the semiconductor test system, including online test status and window idle status; When the test state is determined to be an online test state, the number of switching times of each relay is counted to obtain the cumulative number of switching times of the corresponding relay.

[0008] Alternatively, in one possible implementation of the first aspect, When the cumulative number of switching operations meets the preset interval condition, the contact resistance of the corresponding relay is obtained as the cumulative contact resistance, including: The preset interval number is retrieved, and the ratio of the cumulative number of switching to the preset interval number is calculated to obtain the interval ratio. When the interval ratio is determined to be an integer and the test state is converted to the window idle state, the contact resistance of the relay is measured to obtain the cumulative contact resistance.

[0009] Optionally, in one possible implementation of the first aspect, the step of acquiring multiple sets of detection datasets and predicting the lifetime switching count of each relay includes: Using the number of detection switching times in the detection dataset as the independent variable and the cumulative contact resistance corresponding to the number of detection switching times in the detection dataset as the dependent variable, the least squares method is used to determine the linear relationship between the number of detection switching times and the cumulative contact resistance. The lifespan switching frequency of each relay is predicted based on the linear relationship described above.

[0010] Optionally, in one possible implementation of the first aspect, predicting the lifetime switching count of each relay based on the linear relationship includes: Based on the linear relationship corresponding to each relay, the number of detection switching times corresponding to the preset failure threshold is calculated, which is taken as the number of relay lifespan switching times.

[0011] Optionally, in one possible implementation of the first aspect, determining the current operating state of each relay includes: The relays are grouped to obtain multiple relay groups; Based on the detection dataset of each relay in each relay group, the current usage status of each relay is determined.

[0012] Optionally, in one possible implementation of the first aspect, the grouping of relays to obtain multiple relay groups includes: Obtain the equipment model, batch number, and workstation number corresponding to each relay; Relays with the same equipment model, batch, and workstation are grouped into the same group to obtain multiple relay groups.

[0013] Optionally, in one possible implementation of the first aspect, determining the current usage status of each relay based on the detection dataset of each relay within each relay group includes: Retrieve a preset switching frequency range, and select the cumulative contact resistance of each relay in the same relay group whose switching frequency falls within the switching frequency range, as the contact resistance of the same level in the corresponding switching frequency range; Based on the same level contact resistance, calculate the mean resistance and standard deviation of the resistance corresponding to the switching number interval, calculate the product of the preset multiple and the standard deviation of the resistance, and obtain the abnormal value; Calculate the absolute value of the difference between the contact resistance of each level and the average resistance in the corresponding switching frequency interval to obtain the resistance difference; When the resistance difference is determined to be greater than or equal to the abnormal value, the current operating state of the corresponding relay is determined to be abnormal. When the resistance difference is less than the abnormal value, the current operating status of the corresponding relay is determined to be normal.

[0014] Optionally, in one possible implementation of the first aspect, determining the current lifespan percentage of each relay based on the number of lifespan switching events, and performing tiered early warning based on the current lifespan percentage and the current usage status, includes: Based on the ratio of the cumulative number of switching times to the number of lifetime switching times, the current lifetime percentage of each relay is obtained; Retrieve preset prompt percentages and lock percentages; When the current lifespan percentage is determined to be greater than or equal to the locked percentage, the corresponding relay is locked; When the current lifespan percentage is less than the locked percentage, and the current usage state is an abnormal state, a corresponding relay status warning information is generated; When the current lifespan percentage is greater than or equal to the prompt percentage and less than the lock percentage, and the current usage state is normal, a corresponding lifespan prompt message for the relay is generated.

[0015] A second aspect of the present invention provides an online relay life detection system, comprising: The statistics module is used to count the number of times each relay in the semiconductor testing system switches on and off, and to obtain the cumulative number of switching times for the corresponding relay. The measurement module is used to determine the contact resistance of the corresponding relay when the cumulative number of switching meets the preset interval condition, and use it as the cumulative contact resistance. The judgment module is used to determine that when the cumulative contact resistance is less than or equal to a preset failure threshold, the cumulative number of switching corresponding to the cumulative contact resistance is obtained as the detection switching number, and a detection dataset is formed based on the cumulative contact resistance and the corresponding detection switching number. The prediction module is used to acquire multiple sets of detection datasets, predict the number of switching cycles for each relay's lifespan, and determine the current usage status of each relay. The early warning module is used to determine the current lifespan percentage of each relay based on the number of lifespan switching cycles, and to provide graded early warnings based on the current lifespan percentage and the current usage status.

[0016] The beneficial effects of this invention are as follows: 1. This invention statistically analyzes the number of switching operations of each relay in a semiconductor testing system to obtain the cumulative switching count. When the cumulative switching count meets a preset interval condition, the cumulative contact resistance of the relay is obtained. If the cumulative contact resistance is less than or equal to a preset failure threshold, a detection dataset is formed based on the cumulative contact resistance and the corresponding detection switching count. Based on multiple sets of detection datasets, the remaining lifespan switching count of each relay is predicted, and the current usage status of each relay is determined. Then, a graded warning is given based on the current lifespan percentage and the current usage status. This invention predicts the remaining lifespan of the relay by using the correspondence between the cumulative contact resistance and the detection switching count, avoiding the replacement based on a uniform rated switching count while ignoring the actual wear of individual relays. This invention achieves the prediction of the remaining lifespan of individual relays and the identification of abnormally deteriorated relays.

[0017] 2. This invention monitors the test status of a semiconductor test system. When the test status is online, it counts the number of times the relay switches on and off. When the test status changes to an idle window state, it measures the contact resistance of the relay. This invention completes the contact resistance measurement during idle moments such as wafer slicing, batch switching, and program loading interspersed during the execution of test tasks in the semiconductor test system, without interrupting the ongoing test task, thus realizing online measurement of relay contact resistance during the operation of the semiconductor test system.

[0018] 3. This invention groups relays with the same equipment model, batch, and workstation into the same relay group. Within the same relay group, the cumulative contact resistance of relays with the same number of switching tests is selected as the contact resistance of the same level. The average resistance and standard deviation of the contact resistance of the same level are calculated and abnormal values ​​are determined. The current usage state of relays with resistance differences greater than or equal to the abnormal values ​​is determined as abnormal state. This invention performs a horizontal comparison of the contact resistance of relays of the same type under the same conditions, avoiding differences in contact resistance caused by different number of switching tests, and realizing the identification of early abnormal deterioration of relays. Attached Figure Description

[0019] Figure 1 A flowchart of an online relay life detection method provided by the present invention; Figure 2 This is a schematic diagram of the structure of an online relay life detection system provided by the present invention; Figure 3 This is a schematic diagram of the hardware structure of an electronic device provided by the present invention. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0021] The terms "first," "second," "third," "fourth," etc. (if present) in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein.

[0022] It should be understood that in the various embodiments of the present invention, the sequence number of each process does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present invention.

[0023] It should be understood that in this invention, "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion, for example, a process, method, system, product, or device that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such process, method, product, or device.

[0024] It should be understood that in this invention, "multiple" refers to two or more. "And / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "Contains A, B, and C", "Contains A, B, and C" means that all three A, B, and C are contained; "Contains A, B, or C" means that one of A, B, and C is contained; "Contains A, B, and / or C" means that any one, two, or three of A, B, and C are contained.

[0025] It should be understood that in this invention, "B corresponding to A", "B corresponding to A", "A and B correspond", or "B and A correspond" means that B is associated with A, and B can be determined based on A. Determining B based on A does not mean determining B solely based on A; B can also be determined based on A and / or other information. Matching A and B is defined as a similarity between A and B that is greater than or equal to a preset threshold.

[0026] Depending on the context, "if" as used here can be interpreted as "when," "when," "in response to determination," or "in response to detection."

[0027] The technical solution of the present invention will be described in detail below with reference to specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments.

[0028] This invention provides a method for online detection of relay life, such as... Figure 1 As shown, it includes: S1: Count the number of times each relay in the semiconductor testing system switches on and off to obtain the cumulative number of times the corresponding relay switches.

[0029] It should be noted that when semiconductor testing systems perform batch testing on chips, their internal relays, such as reed relays, need to frequently engage and disengage to switch test signals. Each engagement and disengagement of a relay indicates that its contacts have undergone wear. Since the contact resistance of a relay gradually increases with the accumulation of switching counts, the number of switching counts reflects the degree of wear on the relay contacts. Therefore, this step counts the number of on / off switching counts for each relay, and the accumulated number of switching counts reflects the degree of wear already achieved by the relay.

[0030] Semiconductor testing systems refer to automated testing equipment used to perform functional and parameter tests on semiconductor chips. These systems have a large number of relays between the pins of the chip under test and the testing instruments. By controlling the on / off state of each relay, the test signal is switched between the testing instruments and the chip under test. Semiconductor testing systems are existing testing equipment and will not be described in detail here.

[0031] In addition, the number of on / off switching counts refers to the count of the relay completing one on / off cycle, while the cumulative switching count refers to the accumulated value of the number of on / off switching counts since the relay was put into use.

[0032] In some embodiments, step S1 (statistically counting the number of on / off switching of each relay in the semiconductor testing system to obtain the cumulative switching count of the corresponding relay) includes S11-S12: S11, Monitor the test status of the semiconductor test system, the test status includes online test status and window idle status.

[0033] It should be noted that measuring the contact resistance of a relay requires disconnecting the relay from the test signal path before measurement. Performing the measurement during the semiconductor test system's testing process would interrupt the ongoing test. This invention divides the semiconductor test system's test states into online test state and window idle state. When entering the online test state, the number of relay on / off switching operations is counted; when entering the window idle state, the relay's contact resistance is measured. This allows for online measurement of the relay's contact resistance without interrupting the test or stopping the system, thus enabling online detection of the relay's lifespan. Furthermore, as the semiconductor test system transitions between the online test state and the window idle state, the number of relay on / off switching operations continuously accumulates across each online test state, and the relay's contact resistance is measured multiple times across multiple window idle states, resulting in multiple sets of measurement data reflecting the change in contact resistance with the cumulative number of switching operations.

[0034] Among them, test status refers to the current operating status of the semiconductor test system, indicating whether it is currently performing a test task; contact resistance refers to the resistance between the contacts of a relay after it is closed.

[0035] It is understandable that real-time monitoring of the semiconductor testing system's operation determines the state in which the semiconductor testing system is performing testing tasks on the chip under test as the online testing state, and the state in which the semiconductor testing system is not performing testing tasks as the window idle state. The semiconductor testing system is in the window idle state during periods when it is not performing testing tasks, such as wafer slicing, batch switching, and program loading.

[0036] S12, when the test state is determined to be an online test state, the number of switching times of each relay is counted to obtain the cumulative number of switching times of the corresponding relay.

[0037] Understandably, when the test is in online testing mode, the number of on / off switching times of each relay is accumulated to obtain the cumulative switching count of each relay.

[0038] S2, when the cumulative number of switching times meets the preset interval condition, obtain the contact resistance of the corresponding relay as the cumulative contact resistance.

[0039] It should be noted that if the contact resistance of the relay is continuously measured, the semiconductor testing system will be unable to perform normal testing. Furthermore, the contact resistance of the relay does not change significantly in a short period of time. Therefore, this invention measures the contact resistance only once when the cumulative number of switching operations meets the preset interval condition.

[0040] Among them, the preset interval condition refers to the cumulative number of switching interval conditions that must be met when measuring the contact resistance between two adjacent measurements; the cumulative contact resistance refers to the contact resistance measured by the relay in the window idle state after the cumulative number of switching meets the preset interval condition.

[0041] Understandably, after confirming that the cumulative number of switching operations meets the preset interval condition, the contact resistance of the corresponding relay is measured once when the test state transitions to the window idle state, and the measured contact resistance is used as the cumulative contact resistance. For example, if the preset interval condition is that the cumulative number of switching operations is an integer multiple of 100,000, then the contact resistance should be measured once when the cumulative number of switching operations reaches 100,000, 200,000, and 300,000, respectively, while the semiconductor test system is in the window idle state.

[0042] In some embodiments, step S2 (when determining that the cumulative number of switching times meets the preset interval condition, obtaining the contact resistance of the corresponding relay as the cumulative contact resistance) includes S21-S22: S21, retrieve the preset interval number, calculate the ratio of the cumulative number of switching to the preset interval number, and obtain the interval ratio.

[0043] Among them, the preset interval number refers to the cumulative number of switching intervals required when measuring the contact resistance between two adjacent measurements; the interval ratio refers to the ratio of the cumulative number of switching intervals to the preset interval number.

[0044] Understandably, whenever a switchover is detected that causes a change in the cumulative number of switches, the current cumulative number of switches is divided by the preset interval to obtain the interval ratio. For example, if the preset interval is 100,000 and the current cumulative number of switches is 300,000, then the interval ratio is 3.

[0045] S22, when the interval ratio is determined to be an integer and the test state is converted to the window idle state, the contact resistance of the relay is measured to obtain the cumulative contact resistance.

[0046] It should be noted that in this step, when the interval ratio is an integer, the measurement time point is determined, and the measurement is performed only after the test state changes to the window idle state, so as to complete the contact resistance measurement without interrupting the test task.

[0047] Understandably, when the interval ratio is determined to be an integer and the test state transitions from online testing to window idle state, the relay being measured is closed, a preset measurement current is supplied to the relay contacts, and the voltage drop across the relay contacts is collected. The ratio of the collected voltage drop to the measurement current is used as the cumulative contact resistance of the relay. Specifically, the measurement current is supplied to the relay contacts through the current terminal of the precision measurement unit (PMU) in the semiconductor testing system. The measurement current flows into one end of the contact and out the other, forming a current loop. The voltage drop across the contacts is collected through the voltage terminal of the precision measurement unit. Since almost no current flows when collecting the voltage drop, the influence of lead resistance on the measurement result is eliminated, making the collected voltage drop correspond to the contact resistance across the contacts. For example, if the measurement current supplied to the contacts is 5mA and the collected voltage drop is 0.48mV, then the cumulative contact resistance is 96mΩ.

[0048] S3, when the cumulative contact resistance is less than or equal to a preset failure threshold, the cumulative switching count corresponding to the cumulative contact resistance is obtained as the detection switching count, and a detection dataset is formed based on the cumulative contact resistance and the corresponding detection switching count.

[0049] It should be noted that once the contact resistance of a relay rises to a certain level, its performance can no longer meet the requirements for transmitting test signals. At this point, the relay has failed and needs to be replaced directly without further prediction of its remaining lifespan. Therefore, this step first compares the cumulative contact resistance with a preset failure threshold. If the cumulative contact resistance is less than or equal to the preset failure threshold, the relay is confirmed to still be usable. Then, the cumulative contact resistance measured in this step and its corresponding cumulative switching count are combined into a test dataset.

[0050] Among them, the preset failure threshold refers to the contact resistance threshold that is set in advance to determine whether the relay has failed; the detection dataset refers to the data set formed by the combination of cumulative contact resistance and the corresponding number of detection switching.

[0051] Understandably, the latest measured cumulative contact resistance is compared with a preset failure threshold. If the cumulative contact resistance is less than or equal to the preset failure threshold, the cumulative switching count corresponding to the cumulative contact resistance is taken as the detection switching count, and the cumulative contact resistance and the corresponding detection switching count are combined to form a detection dataset.

[0052] It is worth mentioning that the contact resistance measurement is performed in the window idle state, and the actual cumulative switching count of the relay during the measurement is used as the detection switching count for that measurement. For example, if the cumulative switching count reaches 300,000 times during a certain measurement, the measurement time is determined, and the measurement is performed after the test state changes to the window idle state. The actual cumulative contact resistance after the measurement is 96mΩ. At this time, the actual cumulative switching count of the relay is 303,700 times. The preset failure threshold is 250mΩ. Since 96mΩ is less than 250mΩ, 303,700 times is used as the detection switching count. The 303,700 times and 96mΩ are combined to form a detection dataset.

[0053] In addition, if the cumulative contact resistance exceeds the preset failure threshold, it is determined that the corresponding relay has failed, and the relay is locked and its use is stopped.

[0054] S4. Obtain multiple sets of detection datasets, predict the number of switching cycles for each relay's lifespan, and determine the current usage status of each relay.

[0055] It should be noted that this step obtains multiple sets of test datasets for the same relay. By using these multiple sets of test datasets, the rising trend of the relay's contact resistance is determined, thereby predicting the number of switching operations required for the relay to reach its failure level. Furthermore, this step also performs a horizontal comparison of similar relays using multiple relay test datasets to identify abnormal relays whose contact resistance deviates significantly from that of similar relays.

[0056] Among them, the number of switching cycles refers to the number of times the relay's contact resistance reaches the preset failure threshold; the current usage status refers to whether the relay has experienced abnormal deterioration compared to other similar relays, and the current usage status includes normal status and abnormal status.

[0057] In some embodiments, step S4 (obtaining multiple sets of detection datasets and predicting the number of switching cycles for each relay) includes S41-S42: S41, using the number of detection switching in the detection dataset as the independent variable and the cumulative contact resistance corresponding to the number of detection switching in the detection dataset as the dependent variable, the least squares method is used to determine the linear relationship between the number of detection switching and the cumulative contact resistance.

[0058] It should be noted that the contact resistance of the same relay increases with the number of detection switching times. This step uses multiple sets of detection datasets of the same relay, with the number of detection switching times as the independent variable and the cumulative contact resistance as the dependent variable, to fit a straight line that can represent the law of increase in the contact resistance of the relay, so that the linear relationship of the rate of increase in contact resistance can be reflected for relays with different degrees of wear.

[0059] Understandably, by using the number of detection switching events in multiple sets of detection datasets for the same relay as the independent variable and the cumulative contact resistance corresponding to the number of detection switching events as the dependent variable, and employing the least squares method to determine the linear relationship between the number of detection switching events and the cumulative contact resistance, the following formula can be used to obtain the linear relationship between the number of detection switching events and the cumulative contact resistance. In the formula, For cumulative contact resistance, To detect the number of switching times, For the rate of degradation, The initial resistance value represents the contact resistance when the number of switching detections is 0.

[0060] The following formula is used to obtain the result. and To minimize the sum of squared deviations of each set of test datasets from the line corresponding to the linear relationship, In the formula, To detect the number of groups in the dataset, For the first The number of detection switching times in the group detection dataset. For the first The cumulative contact resistance in the group detection dataset, The sum of the products of the number of detection switching times and the cumulative contact resistance for each group. This is the sum of the number of detection switches for each group. This is the sum of the cumulative contact resistances of all groups. This is the sum of the squares of the number of times each group of tests switched.

[0061] For example, three sets of test data for a certain relay are as follows: 1 million test switching cycles correspond to a cumulative contact resistance of 102 mΩ, 2 million test switching cycles correspond to a cumulative contact resistance of 108 mΩ, and 3 million test switching cycles correspond to a cumulative contact resistance of 117 mΩ. If the number of test switching cycles is expressed in tens of thousands, then... It is 3. It is 600. It is 327. It is 66900. The value is 140,000. Substituting this into the above formula, we obtain the degradation rate. The value is 0.075, and the initial resistance value is obtained. If the value is 94, then the linear relationship of the relay is as follows: In addition, the degradation rate refers to the coefficient of the number of switching operations in the linear relationship, which reflects how fast the relay contact resistance increases with the number of switching operations.

[0062] It is worth mentioning that the method of determining linear relationships based on the least squares method is existing technology and will not be elaborated here.

[0063] S42, predict the number of switching cycles for each relay based on the linear relationship.

[0064] It should be noted that by extrapolating along the linear relationship, the number of detection switching times corresponding to when the contact resistance of the relay rises to the preset failure threshold can be obtained. This number of detection switching times is the total number of switching times that the relay can use. Thus, the number of switching times for the lifespan of the relay can be predetermined before the contact resistance of the relay reaches the preset failure threshold.

[0065] In some embodiments, step S42 (predicting the number of lifetime switching operations for each relay based on the linear relationship) includes S421: S421, based on the linear relationship corresponding to each relay, calculate the number of detection switching times corresponding to the preset failure threshold, which is used as the number of relay lifespan switching times.

[0066] Understandably, by substituting the preset failure threshold into the formula corresponding to the linear relationship, the number of detection switching times corresponding to when the contact resistance reaches the preset failure threshold can be calculated. This calculated number of detection switching times is then used as the relay's lifetime switching count. For example, the linear relationship for a certain relay corresponds to the following formula: The preset failure threshold is 250mΩ. Calculating (250-94) / 0.075=20.8 million times, the lifespan of the relay is 20.8 million switching cycles.

[0067] In some embodiments, step S4 (determining the current operating state of each relay) includes S43-S44: S43, group the relays to obtain multiple relay groups.

[0068] It should be noted that relays of different models, batches, and workstations will have inherent differences in contact resistance. Comparing the contact resistances of these relays together would misinterpret these inherent differences as abnormalities. Therefore, this step first groups the relays so that relays within the same group have the same model, batch, and workstation, thus making the contact resistances of relays within the same group comparable.

[0069] In some embodiments, step S43 (grouping the relays to obtain multiple relay groups) includes S431-S432: S431, obtain the equipment model, equipment batch and equipment station corresponding to each relay.

[0070] Among them, equipment model refers to the model of the relay; equipment batch refers to the batch of relays put into use; equipment station refers to the station where the relay is located in the semiconductor testing system; and relay group refers to a group of relays that are the same in terms of equipment model, equipment batch and equipment station.

[0071] S432, relays with the same equipment model, equipment batch and equipment station are grouped into the same group to obtain multiple relay groups.

[0072] It is understandable that by obtaining the equipment model, batch number, and workstation number corresponding to each relay, relays with the same equipment model, batch number, and workstation number are grouped into the same relay group, thus obtaining multiple relay groups.

[0073] S44, based on the detection dataset of each relay in each relay group, determine the current usage status of each relay.

[0074] It should be noted that the contact resistance of a relay increases with the number of switching operations. Directly comparing the contact resistance of relays within the same relay group could misclassify relays with higher switching counts as faulty. Therefore, this step involves comparing the contact resistance of relays within the same relay group whose switching counts fall within the same range.

[0075] In some embodiments, step S44 (determining the current usage status of each relay based on the detection dataset of each relay in each relay group) includes S441-S445: S441, retrieve the preset switching frequency range, select the cumulative contact resistance of each relay in the same relay group whose detection switching frequency is within the switching frequency range, and use it as the contact resistance of the same level in the corresponding switching frequency range.

[0076] The switching frequency range refers to the range of switching frequency used to select the contact resistance of the same level; the contact resistance of the same level refers to the cumulative contact resistance of each relay in the same relay group whose switching frequency is within the same switching frequency range.

[0077] Understandably, a preset switching frequency range is retrieved, and within the same relay group, the cumulative contact resistance of each relay whose switching frequency falls within this range is selected. This selected cumulative contact resistance is then used as the corresponding contact resistance for that switching frequency range. For example, if the switching frequency range is 3 million to 3.2 million times, then the cumulative contact resistance of each relay within the same relay group whose switching frequency falls between 3 million and 3.2 million times is used as the corresponding contact resistance.

[0078] It is worth mentioning that if the same relay corresponds to multiple sets of detection datasets within a certain switching count range, the cumulative contact resistance in the set of detection datasets with the largest number of switching counts is selected as the contact resistance of the relay in that switching count range, so that each relay corresponds to a contact resistance of the same level in that switching count range.

[0079] S442, based on the same level contact resistance, calculate the average resistance and standard deviation of the resistance corresponding to the switching number interval, calculate the product of the preset multiple and the standard deviation of the resistance, and obtain the abnormal value.

[0080] Among them, the average resistance refers to the average value of the contact resistance of each level corresponding to the same number of switching intervals; the standard deviation of resistance refers to the overall standard deviation of the contact resistance of each level corresponding to the same number of switching intervals; the preset multiplier refers to the multiplier value that is pre-set and used to multiply the resistance standard deviation to obtain the abnormal value.

[0081] Understandably, the average resistance and standard deviation of each contact resistance within the same switching frequency range are calculated, and the abnormal value is obtained by multiplying the preset multiplier by the standard deviation. For example, if the eight contact resistances within a certain switching frequency range are 116mΩ, 118mΩ, 120mΩ, 122mΩ, 124mΩ, 126mΩ, 128mΩ, and 186mΩ, the calculated average resistance is 130mΩ, the standard deviation is approximately 21.5mΩ, and the preset multiplier is 2, then the abnormal value is 43mΩ.

[0082] S443, calculate the absolute value of the difference between the contact resistance of each level and the average resistance in the corresponding switching frequency interval, and obtain the resistance difference value.

[0083] Understandably, the resistance difference between each contact resistance of the same level within the same switching frequency range is calculated by subtracting the average resistance from the average resistance, and taking the absolute value of the subtraction. For example, if a contact resistance of the same level is 116mΩ and the average resistance is 130mΩ, then the resistance difference between the two contact resistances is 14mΩ.

[0084] S444, when the resistance difference is determined to be greater than or equal to the abnormal value, the current operating state of the corresponding relay is determined to be abnormal.

[0085] An abnormal state refers to a state in which the contact resistance of a relay deviates from that of similar relays.

[0086] Understandably, the resistance difference corresponding to each contact resistor of the same level is compared with the abnormal value. If the resistance difference is greater than or equal to the abnormal value, the current operating state of the relay corresponding to the contact resistor of the same level is determined to be abnormal.

[0087] S445: When the resistance difference is less than the abnormal value, the current operating status of the corresponding relay is determined to be normal.

[0088] The normal state refers to the state in which the contact resistance of the relay does not deviate from that of similar relays.

[0089] Understandably, if the resistance difference is less than the abnormal value, the current operating state of the relay corresponding to the same level of contact resistance is determined to be normal. Referring to the example in step S442, the resistance difference corresponding to the relay with a contact resistance of 186mΩ is 56mΩ, which is greater than the abnormal value of 43mΩ, so the current operating state of this relay is abnormal; the resistance differences corresponding to the other relays are all less than 43mΩ, and their current operating states are all normal.

[0090] S5, determine the current lifespan percentage of each relay based on the number of lifespan switching cycles, and perform graded early warning based on the current lifespan percentage and the current usage status.

[0091] It should be noted that the lifetime switching count represents the total number of times the relay can be used, while the current usage status represents whether the relay has undergone abnormal deterioration compared to similar relays. This step first determines the current usage level of the relay based on the lifetime switching count, and then provides different levels of early warning for the relay based on the current lifetime percentage and the current usage status, so that relays that are close to failure and relays that have undergone abnormal deterioration can be distinguished and dealt with accordingly.

[0092] In some embodiments, step S5 (determining the current lifespan percentage of each relay based on the number of lifespan switching cycles, and performing tiered early warning based on the current lifespan percentage and the current usage status) includes S51-S55: S51, based on the ratio of the cumulative switching times to the lifetime switching times, the current lifetime percentage of each relay is obtained.

[0093] The current lifespan percentage refers to the ratio of the current cumulative number of relay switching to the total number of lifespan switching.

[0094] Understandably, dividing the current cumulative number of switching operations of a relay by the relay's lifetime switching operations gives the current lifetime percentage of that relay. For example, if a relay has a current cumulative number of switching operations of 4.16 million and a lifetime switching operation of 20.8 million, then its current lifetime percentage is approximately 20%.

[0095] S52, retrieve the preset prompt ratio and lock ratio.

[0096] Among them, the prompt ratio refers to the pre-set ratio used to trigger lifespan prompt information; the lock ratio refers to the pre-set ratio used to trigger locking.

[0097] Additionally, the percentage indicated is less than the percentage of locked accounts.

[0098] S53, when it is determined that the current lifespan percentage is greater than or equal to the locking percentage, the corresponding relay is locked.

[0099] It should be noted that when the current lifespan percentage reaches the lockout percentage, it indicates that the relay is close to failure. At this point, the relay is no longer suitable for use. Therefore, this step locks the relay when the current lifespan percentage is greater than or equal to the lockout percentage, and stops its use regardless of the current usage status.

[0100] Understandably, the current lifespan percentage is compared with the locked percentage. If the current lifespan percentage is greater than or equal to the locked percentage, the corresponding relay is locked and its use is stopped.

[0101] S54, if it is determined that the current lifespan percentage is less than the lock percentage and the current usage state is an abnormal state, generate the corresponding relay status warning information.

[0102] Among them, status warning information refers to information used to indicate that the current operating status of the relay is abnormal.

[0103] It should be noted that relays currently in an abnormal operating state, even if their current lifespan percentage has not yet reached the lockout percentage, indicate that their contact resistance has already deviated significantly compared to similar relays, suggesting early abnormal degradation. Therefore, this step generates a status warning message when the current lifespan percentage is less than the lockout percentage and the current operating state is abnormal, thereby filtering out relays exhibiting early abnormal degradation.

[0104] Understandably, if the current lifespan percentage is less than the locked percentage, and the current usage status is abnormal, a status warning message for the corresponding relay will be generated and sent to the maintenance terminal.

[0105] S55, when it is determined that the current lifespan percentage is greater than or equal to the prompt percentage and less than the lock percentage, and the current usage state is normal, the corresponding relay lifespan prompt information is generated.

[0106] Among them, the lifespan warning information refers to the information used to indicate that the current lifespan of the relay has reached the warning threshold.

[0107] It should be noted that relays whose current lifespan percentage is between the warning percentage and the locked percentage, and whose current usage status is normal, have contact resistance that is neither close to failure nor significantly deviates from that of similar relays; their usage level simply requires attention. Therefore, this step generates lifespan warning information for these relays to facilitate subsequent maintenance.

[0108] Understandably, if the current lifespan percentage is greater than or equal to the warning percentage but less than the locked percentage, and the current usage status is normal, a lifespan warning message for the corresponding relay will be generated and sent to the maintenance terminal.

[0109] See Figure 2 This is a schematic diagram of an online relay life detection system provided in an embodiment of the present invention. The system includes: The statistics module is used to count the number of times each relay in the semiconductor testing system switches on and off, and to obtain the cumulative number of switching times for the corresponding relay. The measurement module is used to determine the contact resistance of the corresponding relay when the cumulative number of switching meets the preset interval condition, and use it as the cumulative contact resistance. The judgment module is used to determine that when the cumulative contact resistance is less than or equal to a preset failure threshold, the cumulative number of switching corresponding to the cumulative contact resistance is obtained as the detection switching number, and a detection dataset is formed based on the cumulative contact resistance and the corresponding detection switching number. The prediction module is used to acquire multiple sets of detection datasets, predict the number of switching cycles for each relay's lifespan, and determine the current usage status of each relay. The early warning module is used to determine the current lifespan percentage of each relay based on the number of lifespan switching cycles, and to provide graded early warnings based on the current lifespan percentage and the current usage status.

[0110] See Figure 3 This is a schematic diagram of the hardware structure of an electronic device provided in an embodiment of the present invention. The electronic device 30 includes: a processor 31, a memory 32, and a computer program; wherein... The memory 32 is used to store the computer program, and the memory may also be flash memory. The computer program is, for example, an application program or functional module that implements the above method.

[0111] The processor 31 is configured to execute the computer program stored in the memory to implement the various steps performed by the device in the above method. For details, please refer to the relevant descriptions in the preceding method embodiments.

[0112] Alternatively, the memory 32 can be either standalone or integrated with the processor 31.

[0113] When the memory 32 is a device independent of the processor 31, the device may further include: Bus 33 is used to connect the memory 32 and the processor 31.

[0114] The present invention also provides a readable storage medium storing a computer program, which, when executed by a processor, is used to implement the methods provided in the various embodiments described above.

[0115] The readable storage medium can be a computer storage medium or a communication medium. A communication medium includes any medium that facilitates the transfer of computer programs from one location to another. A computer storage medium can be any available medium accessible to a general-purpose or special-purpose computer. For example, a readable storage medium is coupled to a processor, enabling the processor to read information from and write information to the readable storage medium. Of course, the readable storage medium can also be a component of the processor. The processor and the readable storage medium can reside in an Application-Specific Integrated Circuit (ASIC). Alternatively, the ASIC can be located in a user equipment. Of course, the processor and the readable storage medium can also exist as discrete components in a communication device. The readable storage medium can be a read-only memory (ROM), random access memory (RAM), CD-ROM, magnetic tape, floppy disk, and optical data storage device, etc.

[0116] The present invention also provides a program product including executable instructions stored in a readable storage medium. At least one processor of the device can read the executable instructions from the readable storage medium, and the at least one processor executes the executable instructions to cause the device to implement the methods provided in the various embodiments described above.

[0117] In the embodiments of the above-described device, it should be understood that the processor can be a Central Processing Unit (CPU), or other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), etc. The general-purpose processor can be a microprocessor or any conventional processor. The steps of the method disclosed in this invention can be directly manifested as execution by a hardware processor, or execution by a combination of hardware and software modules within the processor.

[0118] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for online detection of relay life, characterized in that, include: The number of times each relay in the semiconductor testing system switches on and off is counted to obtain the cumulative number of switching times for the corresponding relay. When the cumulative number of switching times meets the preset interval condition, the contact resistance of the corresponding relay is obtained as the cumulative contact resistance; When the cumulative contact resistance is determined to be less than or equal to a preset failure threshold, the cumulative number of switching times corresponding to the cumulative contact resistance is obtained as the detection switching count, and a detection dataset is formed based on the cumulative contact resistance and the corresponding detection switching count; Multiple sets of test datasets are acquired to predict the number of switching cycles for each relay and determine the current usage status of each relay. The current lifespan percentage of each relay is determined based on the number of lifespan switching cycles, and a graded early warning is issued based on the current lifespan percentage and the current usage status.

2. The method according to claim 1, characterized in that, The method of statistically analyzing the number of on / off switching operations of each relay in the semiconductor testing system to obtain the cumulative switching count of the corresponding relay includes: Monitor the test status of the semiconductor test system, including online test status and window idle status; When the test state is determined to be an online test state, the number of switching times of each relay is counted to obtain the cumulative number of switching times of the corresponding relay.

3. The method according to claim 2, characterized in that, When the cumulative number of switching operations meets the preset interval condition, the contact resistance of the corresponding relay is obtained as the cumulative contact resistance, including: The preset interval number is retrieved, and the ratio of the cumulative number of switching to the preset interval number is calculated to obtain the interval ratio. When the interval ratio is determined to be an integer and the test state is converted to the window idle state, the contact resistance of the relay is measured to obtain the cumulative contact resistance.

4. The method according to claim 1, characterized in that, The step of acquiring multiple sets of detection datasets and predicting the number of switching cycles for each relay includes: Using the number of detection switching times in the detection dataset as the independent variable and the cumulative contact resistance corresponding to the number of detection switching times in the detection dataset as the dependent variable, the least squares method is used to determine the linear relationship between the number of detection switching times and the cumulative contact resistance. The lifespan switching frequency of each relay is predicted based on the linear relationship described above.

5. The method according to claim 4, characterized in that, The prediction of the lifespan switching frequency of each relay based on the linear relationship includes: Based on the linear relationship corresponding to each relay, the number of detection switching times corresponding to the preset failure threshold is calculated, which is taken as the number of relay lifespan switching times.

6. The method according to claim 1, characterized in that, Determining the current operating status of each relay includes: The relays are grouped to obtain multiple relay groups; Based on the detection dataset of each relay in each relay group, the current usage status of each relay is determined.

7. The method according to claim 6, characterized in that, The relays are grouped to obtain multiple relay groups, including: Obtain the equipment model, batch number, and workstation number corresponding to each relay; Relays with the same equipment model, batch, and workstation are grouped into the same group to obtain multiple relay groups.

8. The method according to claim 7, characterized in that, The determination of the current usage status of each relay based on the detection dataset of each relay within each relay group includes: Retrieve a preset switching frequency range, and select the cumulative contact resistance of each relay in the same relay group whose switching frequency falls within the switching frequency range, as the contact resistance of the same level in the corresponding switching frequency range; Based on the same level contact resistance, calculate the mean resistance and standard deviation of the resistance corresponding to the switching number interval, calculate the product of the preset multiple and the standard deviation of the resistance, and obtain the abnormal value; Calculate the absolute value of the difference between the contact resistance of each level and the average resistance in the corresponding switching frequency interval to obtain the resistance difference; When the resistance difference is determined to be greater than or equal to the abnormal value, the current operating state of the corresponding relay is determined to be abnormal. When the resistance difference is less than the abnormal value, the current operating status of the corresponding relay is determined to be normal.

9. The method according to claim 8, characterized in that, The step of determining the current lifespan percentage of each relay based on the number of lifespan switching cycles, and performing tiered early warning based on the current lifespan percentage and current usage status, includes: Based on the ratio of the cumulative number of switching times to the number of lifetime switching times, the current lifetime percentage of each relay is obtained; Retrieve preset prompt percentages and lock percentages; When the current lifespan percentage is determined to be greater than or equal to the locked percentage, the corresponding relay is locked; When the current lifespan percentage is less than the locked percentage, and the current usage state is an abnormal state, a corresponding relay status warning information is generated; When the current lifespan percentage is greater than or equal to the prompt percentage and less than the lock percentage, and the current usage state is normal, a corresponding lifespan prompt message for the relay is generated.

10. An online relay life detection system, characterized in that, include: The statistics module is used to count the number of times each relay in the semiconductor testing system switches on and off, and to obtain the cumulative number of switching times for the corresponding relay. The measurement module is used to determine the contact resistance of the corresponding relay when the cumulative number of switching meets the preset interval condition, and use it as the cumulative contact resistance. The judgment module is used to determine that when the cumulative contact resistance is less than or equal to a preset failure threshold, the cumulative number of switching corresponding to the cumulative contact resistance is used as the detection switching number, and a detection dataset is formed based on the cumulative contact resistance and the corresponding detection switching number. The prediction module is used to acquire multiple sets of detection datasets, predict the number of switching cycles for each relay's lifespan, and determine the current usage status of each relay. The early warning module is used to determine the current lifespan percentage of each relay based on the number of lifespan switching cycles, and to provide graded early warnings based on the current lifespan percentage and the current usage status.

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