A method for manufacturing an edge enhancement type phase shift mask

Abstract

The present application relates to phase shift mask manufacturing, in particular to a kind of manufacturing method of edge enhanced phase shift mask, remove native oxide layer, organic contaminant and particle impurity on the surface of substrate, improve the adhesion between photoresist and substrate;Photoresist is coated on the surface of masking layer in substrate, and prebaking and natural cooling are carried out, slowly release the internal stress of photoresist;Substrate is exposed and developed;Masking layer in substrate is etched by wet method;Phase shift layer in substrate is etched by dry method, pattern is transferred to phase shift layer at one time, and form step Rim, simultaneously due to the vertical sidewall characteristics of dry etching, so that the pattern fidelity is extremely high;Photoresist is stripped, and Rim-CD measurement and defect inspection are carried out;The technical scheme provided by the present application can effectively overcome the defects that precision and efficiency cannot be effectively considered in prior art.

Description

Technical Field

[0001] This invention relates to the manufacture of phase shift masks, and more specifically to a method for manufacturing an edge-enhanced phase shift mask. Background Technology

[0002] With the continuous development of science and technology, consumers have increasingly higher pixel requirements for flat panel displays (FPDs), necessitating higher lithographic resolution in the manufacturing process of FPD devices. This has led to the emergence of various lithographic resolution enhancement technologies. Among them, phase-shift mask (PSM) technology is a commonly used lithographic resolution enhancement technique. It can create a 180° phase difference between the light beams of adjacent transparent areas of the mask pattern on the mask, ensuring that the light intensity in dark areas is reduced due to destructive interference between adjacent patterns on the surface of the customer's lithography machine, thereby improving observation contrast and lithographic resolution.

[0003] Currently, the manufacturing process for phase-shift masks used in the FPD industry includes two main paths:

[0004] 1) Two wet etching processes: coating of photoresist → photolithography → development → wet etching of light-shielding layer → wet etching of phase shift layer → second wet etching of light-shielding layer → photoresist removal. This process relies on the high selectivity of the etching solution of the wet etching of Cr layer to MoSi layer, but the second wet etching may cause deviation in pattern size.

[0005] 2) Two-stage photolithography process: coating resist → photolithography → development → wet etching of light-shielding layer → wet etching of phase shift layer → coating resist → second photolithography → development → second wet etching of light-shielding layer → photoresist removal. This process has controllable precision, but the steps are complicated, the cycle is long, the cost is high, and the risk of overlay error is introduced by the two pattern alignments.

[0006] In summary, the pain points of existing technical solutions are: complex processes, high production costs, and the challenge of balancing accuracy and efficiency. Summary of the Invention

[0007] (a) Technical problems to be solved

[0008] In view of the above-mentioned shortcomings of the prior art, the present invention provides a method for manufacturing an edge-enhanced phase shift mask, which can effectively overcome the shortcomings of the prior art in that it is difficult to effectively balance accuracy and efficiency.

[0009] (II) Technical Solution

[0010] To achieve the above objectives, the present invention provides the following technical solution:

[0011] A method for manufacturing an edge-enhanced phase-shift mask includes the following steps:

[0012] S1. Substrate pretreatment: Remove the original oxide layer, organic contaminants and particulate impurities on the substrate surface to improve the adhesion between the photoresist and the substrate;

[0013] S2. Photoresist Coating and Pre-baking: Photoresist is coated on the surface of the masking layer in the substrate, and pre-baking and natural cooling are performed to slowly release the internal stress of the photoresist.

[0014] S3, Patterning: Exposure and development of the substrate;

[0015] S4, Cr layer wet etching: Wet etching of the masking layer in the substrate;

[0016] S5, MoSi layer dry etching: Dry etching is performed on the phase shift layer in the substrate to transfer the pattern to the phase shift layer in one step and form a step rim. At the same time, due to the vertical sidewall characteristics of dry etching, the pattern fidelity is extremely high.

[0017] S6. Photoresist stripping and inspection: Strip the photoresist and perform Rim-CD measurement and defect inspection;

[0018] The substrate includes a base, a phase shift layer, and a masking layer arranged sequentially from bottom to top. The masking layer is made of Cr and serves as the pattern layer to be etched. The phase shift layer is made of MoSi and serves as the phase shift pattern layer.

[0019] Preferably, the substrate pretreatment in S1 includes:

[0020] S11. Preliminary cleaning: The substrate is cleaned sequentially with deionized water and electronic grade isopropanol to remove soluble impurities and oil stains from the surface.

[0021] S12, Deep Cleaning: Performs O2 plasma cleaning to remove the original oxide layer on the surface and improve surface performance;

[0022] S13. Drying treatment: First, it is spun dry by high-speed machinery, and then placed in a vacuum oven to dry completely to remove residual moisture;

[0023] S14. Inspection: Visually inspect the surface of the substrate using an optical LED spotlight to check for any obvious particles. If the surface is not up to standard, it must be reworked and washed again.

[0024] Preferably, the photoresist coating and pre-baking in S2 includes:

[0025] S21. Coating preparation: Place the pretreated substrate on the tray of the rotary coating machine and fix it with a clamp;

[0026] S2, Spin coating: First, use low speed to spread the adhesive to ensure uniform coverage of the adhesive, and then use high speed to control the thickness so that the adhesive layer reaches the target thickness.

[0027] S3. Stepped pre-baking: Place in a hot plate oven and execute a stepped heating program: room temperature → 60℃ → 97℃ → naturally cool to room temperature to slowly release the internal stress of the photoresist.

[0028] Preferably, the graphical representation in S3 includes:

[0029] S31. Exposure preparation: Load the coated substrate into the photolithography machine, import the photolithography pattern according to the preset pattern, and calibrate the substrate positioning accuracy.

[0030] S32. Exposure Optimization: Determine the optimal dose through exposure matrix testing, and use deep ultraviolet (DUV) exposure to ensure image resolution;

[0031] S33, Spray Development: Place the product into the developer and spray it with developer to improve the verticality of the line width sidewalls;

[0032] S34. Post-processing: Immediately after development, perform a spray rinse to remove residual developer, and then dry with nitrogen.

[0033] Preferably, the wet etching of the Cr layer in S4 includes:

[0034] S41. Etching solution preparation: Prepare electronic-grade cerium ammonium nitrate solution;

[0035] S42. Wet etching: The patterned substrate is immersed in an etching solution and ultrasonic-assisted etching is performed to improve the uniformity of the masking layer etching.

[0036] S43. Graded cleaning: First, ultrasonic rinsing and overflow rinsing are performed in sequence, followed by nitrogen drying.

[0037] Preferably, the dry etching of the MoSi layer in S5 includes:

[0038] S51. Chamber pretreatment: The substrate after Cr layer etching is loaded into the etching machine chamber for heating to remove surface adsorbed moisture, and then transferred to the process chamber.

[0039] S52, Pre-Ash treatment: O2 plasma cleaning is performed to remove surface-adsorbed contaminants and avoid affecting etching selectivity;

[0040] S53. Dry etching: SF6 and Ar mixed gas is introduced, the pressure and radio frequency power of the process chamber are controlled, and anisotropic etching is performed. The characteristic peaks of the phase shift layer are monitored in real time by optical emission spectroscopy (OES). Etching is stopped immediately when the peak intensity disappears. Vacuum is drawn after etching.

[0041] S54, Post-Ash treatment: Perform O2 plasma cleaning to remove residual polymer on the linewidth sidewalls;

[0042] S55, Air-breaking protection: Nitrogen gas is introduced to restore atmospheric pressure, preventing air from entering and causing oxidation of the phase shift layer.

[0043] Preferably, the photoresist stripping and inspection in S6 includes:

[0044] S61, Photoresist Removal: Prepare the removal solution, control the temperature of the removal solution, place the substrate after the MoSi layer is etched on the stage, spray the solution with the arm to ensure that the photoresist is completely removed.

[0045] S62, graded cleaning: first rinsed with DIW, then rinsed with arm, and finally rinsed with DIW and spun dry;

[0046] S63, Rim-CD Measurement: Measure multiple points on the entire plate, record the average and deviation of the line width, and ensure the uniformity of the final Rim-CD.

[0047] S64. Defect Inspection: Load the entire layout into the appearance inspection equipment and check for defects in the entire layout using DB and DD inspection logics.

[0048] (III) Beneficial Effects

[0049] Compared with the prior art, the manufacturing method of the edge-enhanced phase shift mask provided by the present invention has the following advantages:

[0050] 1) Introducing high selectivity dry etching technology to simplify the process: SF6 and Ar-based plasma dry etching is used to replace the traditional wet etching of the MoSi layer. This dry etching process has an extremely high etching selectivity (>50:1) for the Cr layer and is anisotropic. Therefore, it automatically stops after etching through the MoSi layer, perfectly preserving the formed Cr layer pattern. No secondary processing of the Cr layer is required, eliminating the need for "secondary wet etching of the light-shielding layer" or "secondary photolithography" steps, fundamentally simplifying the process.

[0051] 2) Excellent overall performance: While simplifying the process and reducing costs, it significantly improves the uniformity of key dimensions of graphics, sidewall morphology and overall defect control. Attached Figure Description

[0052] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the accompanying drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are merely some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.

[0053] Figure 1 This is a schematic diagram of the process of the present invention;

[0054] Figure 2This is a schematic diagram of the substrate structure in this invention;

[0055] Figure 3 This is a schematic diagram of the substrate structure after adhesive coating in this invention;

[0056] Figure 4 This is a schematic diagram of the patterned substrate structure in this invention;

[0057] Figure 5 This is a schematic diagram of the substrate structure after the Cr layer has been etched in this invention;

[0058] Figure 6 This is a schematic diagram of the substrate structure after the MoSi layer has been etched in this invention;

[0059] Figure 7 This is a schematic diagram of the substrate structure after photoresist stripping in this invention;

[0060] Figure 8 This is a SEM image of the substrate interface after photoresist stripping in this invention.

[0061] Figure 9 This is a map showing the distribution of points measured by Rim-CD in this invention;

[0062] Figure 10 This is a bubble diagram obtained from Rim-CD measurements in this invention. Detailed Implementation

[0063] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0064] The purpose of this invention is to propose an innovative method for manufacturing edge-enhanced phase shift masks (Rim-PSM). By introducing dry etching technology for the MoSi layer, and utilizing its extremely high etching selectivity and anisotropy, the pattern can be perfectly transferred from photoresist to the Cr-MoSi bilayer structure in one step. This eliminates the need for "secondary wet etching of the light-shielding layer" or "secondary photolithography", thereby simplifying the process, improving accuracy, and reducing costs.

[0065] In the technical solution of this application, such as Figure 2As shown, the substrate includes, from bottom to top, a substrate 100 (quartz substrate), a phase shift layer 200, and a masking layer 300. The masking layer 300 is made of Cr (1050 Å) and serves as the pattern layer to be etched. The phase shift layer 200 is made of MoSi (1000 Å) and serves as the phase shift pattern layer. The substrate dimensions are 1200*850*10mm (large board). Overall environmental control: the photolithography and etching areas are kept at a constant temperature and humidity (23±1℃, humidity 50±5%), and operations are performed in a Class 10 cleanroom to avoid particulate contamination.

[0066] The following describes the specific process of manufacturing the edge-enhanced phase-shift mask provided by this invention, using concrete examples (e.g.) Figure 1 (as shown) and technical effects.

[0067] S1. Substrate pretreatment: Removes the native oxide layer, organic contaminants, and particulate impurities from the substrate surface to improve the adhesion between the photoresist 400 and the substrate. Specifically, this includes:

[0068] S11. Preliminary cleaning: The substrate is cleaned sequentially with deionized water (DIW, 40kHz ultrasonic, 10min, 25±2℃) and electronic grade isopropanol (IPA, 40kHz ultrasonic, 10min, purity ≥99.9%) to remove soluble impurities and oil stains from the surface.

[0069] S12, Deep Cleaning: Perform O2 plasma cleaning (power 300W, flow rate 200sccm, time 30s) to remove the original oxide layer on the surface and improve surface performance;

[0070] S13. Drying treatment: First, it is spun dry by high-speed machinery (3000 rpm, 5 min), and then placed in a vacuum oven to dry (100℃, 5 min) to completely remove residual moisture.

[0071] S14. Inspection: Visually inspect the surface of the substrate using an optical LED spotlight to check for any obvious particles. If the surface is not up to standard, it must be reworked and washed again.

[0072] S2. Photoresist 400 Coating and Pre-baking: Photoresist 400 (GRX-237 photoresist) is coated on the surface of the masking layer 300 in the substrate, and pre-baking and natural cooling are performed to slowly release the internal stress of the photoresist 400, such as... Figure 3 As shown, it specifically includes:

[0073] S21. Coating preparation: Place the pretreated substrate on the tray of the rotary coating machine and fix it with a clamp (85120 clamp);

[0074] S2, Spin coating: First, use low-speed adhesive spreading (500 rpm, 5s) to ensure uniform coverage of the adhesive, then use high-speed thickness control (3200±100 rpm, 30s) to achieve the target thickness of the adhesive layer (8600ű5%).

[0075] S3. Stepped pre-baking: Place in a hot plate oven and execute a stepped heating program: room temperature → 60℃ (constant temperature for 10 min) → 97℃ (constant temperature for 30 min) → cool naturally to room temperature to slowly release the internal stress of the photoresist 400.

[0076] S3, Patterning: Exposure and development of the substrate, such as... Figure 4 As shown, it specifically includes:

[0077] S31. Exposure preparation: Load the coated substrate into the lithography machine (Mycronic 1619 lithography machine), import the lithography pattern according to the preset pattern (line width 3~10μm), and calibrate the substrate positioning accuracy (±0.1μm).

[0078] S32. Exposure optimization: Determine the optimal dose (100~120mJ / cm², high dose for 3μm linewidth, low dose for 10μm linewidth) through exposure matrix testing, and use deep ultraviolet (DUV) exposure to ensure image resolution;

[0079] S33, Spray Development: Place the product into the developer and spray it with developer (1.83% TMAH developer, temperature 23±1℃) (pressure 0.1MPa, flow rate 5L / min, time 60~90s, the finer the line width, the shorter the development time) to improve the verticality of the line width sidewalls.

[0080] S34. Post-processing: Immediately after development, perform a spray rinse (DIW spray rinse, pressure 0.08 MPa, time 30 s) to remove residual developer, and then dry with nitrogen (pressure 0.3 MPa, time 5 s).

[0081] S4, Cr layer wet etching: Wet etching is performed on the masking layer 300 in the substrate, such as... Figure 5 As shown, it specifically includes:

[0082] S41. Preparation of etching solution: Prepare electronic grade cerium ammonium nitrate solution (concentration 0.9mol / L, prepare fresh and use immediately to avoid oxidation failure).

[0083] S42. Wet etching: The patterned substrate is immersed in the etching solution and ultrasonic-assisted etching is performed (frequency 40kHz, temperature 25℃, time 41s) to improve the uniformity of the 300 masking layer etching (±3%).

[0084] S43. Graded cleaning: First, the water is rinsed by ultrasonic rinsing (DIW ultrasonic rinsing, frequency 40kHz, time 5min), then by overflow rinsing (DIW overflow rinsing, water flow rate 0.5L / min, time 10min), and then dried by nitrogen.

[0085] S5. Dry etching of the MoSi layer: Dry etching is performed on the phase shift layer 200 in the substrate, transferring the pattern to the phase shift layer 200 in one step and forming a stepped rim. Simultaneously, due to the vertical sidewall characteristics of dry etching, the pattern fidelity is extremely high, such as... Figure 6 As shown, it specifically includes:

[0086] S51. Chamber pretreatment: The substrate after Cr layer etching is loaded into the etching machine chamber (GAEA18501 etching machine L / UL chamber) for heating (temperature 130℃, constant temperature accuracy ±1℃, time 10min) to remove surface adsorbed moisture, and then transferred to the process chamber.

[0087] S52, Pre-Ash treatment: Perform O2 plasma cleaning (power 300W, flow rate 200sccm, time 15s) to remove surface adsorbed contaminants and avoid affecting etching selectivity;

[0088] S53. Dry etching: Introduce a mixture of SF6 and Ar gas (volume ratio 3:1, flow rate 300 sccm), control the pressure (50 mTorr) and RF power (600 W) in the process chamber, perform anisotropic etching, and monitor the characteristic peak (288 nm) of the phase shift layer 200 in real time using optical emission spectroscopy (OES). Stop etching immediately when the peak intensity disappears (total etching time is about 240 s, to avoid over-etching). After etching, evacuate the vacuum (vacuum degree ≤ 5 mTorr, time 10 s).

[0089] S54, Post-Ash treatment: Perform O2 plasma cleaning (power 300W, flow rate 200sccm, time 20s) to remove residual polymer on the linewidth sidewalls;

[0090] S55, Air bleed protection: Nitrogen gas is introduced to restore atmospheric pressure (rate 50 mTorr / s) to prevent air from entering and causing oxidation of the phase shift layer 200.

[0091] S6. Photoresist 400 Stripping and Inspection: Strip the photoresist 400 and perform Rim-CD measurement and defect inspection, such as... Figure 7 As shown, it specifically includes:

[0092] S61, Photoresist Removal: Prepare the stripping solution (SPM stripping solution, volume ratio H2SO4:H2O2=4:1), control the temperature of the stripping solution (100±5℃), place the substrate after the MoSi layer is etched on the stage, and spray the solution with the arm (time 15min) to ensure that the photoresist 400 is completely removed.

[0093] S62, graded cleaning: first rinse with DIW (time 10min), then rinse with arm (SC1 arm rinse, time 5min, to remove oxides generated during the peeling process), and finally rinse with DIW (time 5min) and spin dry (speed 120rpm).

[0094] S63, Rim-CD Measurement: Full-plate measurement (using DR8000 optical measurement) multiple points (20*15=300 points, such as...) Figure 9 As shown), the mean and deviation of the line width are recorded to ensure the uniformity of the final Rim-CD (≤±0.2μm).

[0095] S64. Defect Inspection: Load the entire layout into the appearance inspection equipment (Vtec Gemini 1416SH) and check for defects in the entire layout using two inspection logics: DB (data to base) and DD (data to data) (defect inspection accuracy 0.35μm).

[0096] Figure 8 This is a SEM image of the substrate interface after photoresist stripping in this invention. The sidewalls of the Cr layer and MoSi layer are steep, with angles greater than 88°. The interface is clear, with no undercut or residue, demonstrating the excellent anisotropy of the MoSi layer dry etching.

[0097] When performing Rim-CD measurements on a large-size substrate (1200*850mm), a 20*15 matrix distribution was used for CD measurements, totaling 300 measurement points, to achieve uniform coverage of the entire area.

[0098] X-axis (long side): 20 measurement columns are evenly distributed along the 1200mm direction, with a column spacing of 1200mm / (20-1)≈63.16mm (the edge point is 50mm from the end of the substrate to ensure coverage of the edge area).

[0099] Y-axis (short side): 15 measurement rows are evenly distributed along the 850mm direction, with a row spacing of 850mm / (15-1)≈60.71mm (the edge point is 50mm from the end of the substrate).

[0100] Coverage area: Sampling starts 50mm from the edge of the substrate, covering the center, edge and transition areas to ensure that the data reflects the uniformity of the global CD.

[0101] Figure 9This is a map showing the distribution of points measured by Rim-CD in this invention. Figure 10 This is a bubble diagram obtained from Rim-CD measurements in this invention. Figure 10 In the graph, black circles represent measurements at that point that are less than the average, while blue dots represent measurements at that point that are greater than the average. The size of the graph represents the degree of deviation from the average.

[0102] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions will not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for manufacturing an edge-enhanced phase shift mask, characterized in that: Includes the following steps: S1. Substrate pretreatment: Remove the original oxide layer, organic contaminants and particulate impurities on the substrate surface to improve the adhesion between the photoresist (400) and the substrate; S2, Photoresist (400) Coating and Pre-baking: Photoresist (400) is coated on the surface of the masking layer (300) in the substrate, and pre-baking and natural cooling are performed to slowly release the internal stress of the photoresist (400); S3, Patterning: Exposure and development of the substrate; S4, Cr layer wet etching: wet etching is performed on the masking layer (300) in the substrate; S5, MoSi layer dry etching: Dry etching is performed on the phase shift layer (200) in the substrate to transfer the pattern to the phase shift layer (200) in one go and form a step Rim. At the same time, due to the vertical sidewall characteristics of dry etching, the pattern fidelity is extremely high. S6. Photoresist (400) stripping and inspection: The photoresist (400) is stripped and Rim-CD measurement and defect inspection are performed; The substrate includes a base (100), a phase shift layer (200), and a masking layer (300) arranged sequentially from bottom to top. The masking layer (300) is made of Cr and serves as the pattern layer to be etched. The phase shift layer (200) is made of MoSi and serves as the phase shift pattern layer.

2. The method for manufacturing the edge-enhanced phase shift mask according to claim 1, characterized in that: The substrate pretreatment in S1 includes: S11. Preliminary cleaning: The substrate is cleaned sequentially with deionized water and electronic grade isopropanol to remove soluble impurities and oil stains from the surface. S12, Deep Cleaning: Performs O2 plasma cleaning to remove the original oxide layer on the surface and improve surface performance; S13. Drying treatment: First, it is spun dry by high-speed machinery, and then placed in a vacuum oven to dry completely to remove residual moisture; S14. Inspection: Visually inspect the surface of the substrate using an optical LED spotlight to check for any obvious particles. If the surface is not up to standard, it must be reworked and washed again.

3. The method for manufacturing the edge-enhanced phase shift mask according to claim 1, characterized in that: In S2, the photoresist (400) coating and pre-baking include: S21. Coating preparation: Place the pretreated substrate on the tray of the rotary coating machine and fix it with a clamp; S2, Spin coating: First, use low speed to spread the adhesive to ensure uniform coverage of the adhesive, and then use high speed to control the thickness so that the adhesive layer reaches the target thickness. S3, Stepped pre-baking: Place in a hot plate oven and execute a stepped heating program: room temperature → 60℃ → 97℃ → naturally cool down to room temperature, slowly releasing the internal stress of the photoresist (400).

4. The method for manufacturing an edge-enhanced phase shift mask according to claim 1, characterized in that: The graphical representation in S3 includes: S31. Exposure preparation: Load the substrate after coating into the photolithography machine, import the photolithography pattern according to the preset pattern, and calibrate the substrate positioning accuracy. S32. Exposure Optimization: Determine the optimal dose through exposure matrix testing, and use deep ultraviolet (DUV) exposure to ensure image resolution; S33, Spray Development: Place the product into the developer and spray it with developer to improve the verticality of the line width sidewalls; S34. Post-processing: Immediately after development, perform a spray rinse to remove residual developer, and then dry with nitrogen.

5. The method for manufacturing an edge-enhanced phase-shift mask according to claim 1, characterized in that: Wet etching of the Cr layer in S4 includes: S41. Etching solution preparation: Prepare electronic-grade cerium ammonium nitrate solution; S42, Wet etching: The patterned substrate is immersed in the etching solution and ultrasonic-assisted etching is performed to improve the uniformity of the etching of the masking layer (300). S43. Graded cleaning: First, ultrasonic rinsing and overflow rinsing are performed in sequence, followed by nitrogen drying.

6. The method for manufacturing an edge-enhanced phase-shift mask according to claim 1, characterized in that: Dry etching of the MoSi layer in S5 includes: S51. Chamber pretreatment: The substrate after Cr layer etching is loaded into the etching machine chamber for heating to remove surface adsorbed moisture, and then transferred to the process chamber. S52, Pre-Ash treatment: O2 plasma cleaning is performed to remove surface-adsorbed contaminants and avoid affecting etching selectivity; S53, Dry Etching: Introduce SF6 and Ar mixed gas, control the pressure and RF power of the process chamber, perform anisotropic etching, monitor the characteristic peak of the phase shift layer (200) in real time by optical emission spectroscopy (OES), stop etching immediately when the peak intensity disappears, and evacuate after etching. S54, Post-Ash treatment: Perform O2 plasma cleaning to remove residual polymer on the linewidth sidewalls; S55, Air rupture protection: Nitrogen gas is introduced to restore atmospheric pressure, preventing air from entering and causing oxidation of the phase shift layer (200).

7. The method for manufacturing an edge-enhanced phase-shift mask according to claim 1, characterized in that: Photoresist (400) stripping and inspection in S6 includes: S61, Photoresist Removal: Prepare the stripping solution, control the temperature of the stripping solution, place the substrate after the MoSi layer is etched on the stage, spray the solution with the arm to ensure that the photoresist (400) is completely removed. S62, graded cleaning: first rinsed with DIW, then rinsed with arm, and finally rinsed with DIW and spun dry; S63, Rim-CD Measurement: Measure multiple points on the entire plate, record the average and deviation of the line width, and ensure the uniformity of the final Rim-CD. S64. Defect Inspection: Load the entire layout into the appearance inspection equipment and check for defects in the entire layout using DB and DD inspection logics.

Images