Wafer eccentricity compensation motion control method and device, electronic equipment, medium and program

Abstract

The application provides a wafer eccentricity compensation motion control method, device, electronic equipment, medium and program. The method comprises the following steps: obtaining a processing radius and an eccentricity of a wafer center relative to a turntable center; obtaining a target position corresponding to each processing progress on a target processing track of a rotating shaft and a translation shaft according to the processing radius and the eccentricity; the target processing track is a circular track with the wafer center as the center and the processing radius as the radius; driving the rotating shaft and the translation shaft to synchronously link according to the target position; the rotating shaft is used for driving the turntable to rotate around its own axis, and the axis direction of the rotating shaft is perpendicular to the plane where the wafer is located; the translation shaft is used for driving the turntable base to move linearly along the Y direction, and the Y direction is perpendicular to the axis direction of the rotating shaft.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a wafer eccentricity compensation motion control method, device, electronic device, medium and program. Background Technology

[0002] Wafer edge exposure (WEE) is a crucial step in semiconductor photoresist coating and development, used to remove residual photoresist from the wafer edges. If residual photoresist is not removed promptly, it can flow to the back of the wafer, causing contamination, or peel off, affecting the pattern quality of other areas. Therefore, wafer edges must be exposed immediately after spin-coating the photoresist.

[0003] In the existing wafer edge exposure process, due to the positioning error of the robot in the previous process when placing the wafer, the center of the wafer is offset from the center of the rotary table. This causes the trajectory left by the exposure laser on the wafer to deviate from the perfect circle, affecting the exposure accuracy.

[0004] Therefore, how to effectively compensate for wafer placement eccentricity errors while ensuring exposure trajectory accuracy is a technical problem that urgently needs to be solved in this field. Summary of the Invention

[0005] In view of this, the present disclosure provides a motion control scheme for wafer eccentricity compensation to at least partially solve the above problems.

[0006] In a first aspect, this application provides a wafer eccentricity compensation motion control method, comprising the following steps:

[0007] Obtain the processing radius and the eccentricity of the wafer center relative to the turntable center;

[0008] Based on the processing radius and the eccentricity, the target positions corresponding to the rotation axis and translation axis at each processing progress on the target processing trajectory are obtained; wherein, the target processing trajectory is a circular trajectory with the wafer center as the center and the processing radius as the radius;

[0009] Based on the target position, drive the rotation axis and the translation axis to move synchronously.

[0010] The rotation axis is used to drive the turntable to rotate around its own axis, and the axial direction of the rotation axis is perpendicular to the plane where the wafer is located; the translation axis is used to drive the turntable base to move linearly along the Y direction, and the Y direction is perpendicular to the axial direction of the rotation axis.

[0011] Optionally, the eccentricity includes a deviation 'a' of the wafer center relative to the turntable center in the X direction and a deviation 'b' in the Y direction; the X direction and the Y direction are both perpendicular to the axial direction of the rotation axis and are perpendicular to each other;

[0012] Based on the machining radius R and the eccentricity, the target position of the rotation axis is obtained using the first formula, and the target position of the translation axis is obtained using the second formula:

[0013] The first formula is:

[0014]

[0015] The second formula is:

[0016]

[0017] Where C is used to characterize the cumulative rotation angle corresponding to each processing progress on the target processing trajectory. Y is used to characterize the target position of the rotation axis, and Y is used to characterize the target position of the translation axis. In the second formula... The value is calculated using the first formula.

[0018] Optionally, the first formula and the second formula are determined in the following way:

[0019] Establish the wafer coordinate system, turntable coordinate system, turntable base coordinate system, and world coordinate system;

[0020] In the wafer coordinate system, the origin is the center of the wafer, which represents the position coordinates of the laser processing point.

[0021] Based on the eccentricity, the rotation angle of the rotation axis, and the translation amount of the translation axis, the position coordinates of the laser processing point are subjected to multi-level coordinate transformations to obtain the coordinate expression of the laser processing point in the world coordinate system.

[0022] With the laser's position in the world coordinate system fixed as a constraint, and each component of the coordinate expression equal to the laser's fixed coordinates, the simultaneous equations are solved to obtain the first formula and the second formula.

[0023] Optionally, the step of obtaining the target positions corresponding to the rotation axis and translation axis at each processing stage on the target processing trajectory based on the processing radius and the eccentricity is further implemented as follows:

[0024] The target processing trajectory is discretized into N sampling points, and each sampling point is characterized by its cumulative rotation angle C relative to the initial processing position;

[0025] Substitute the cumulative rotation angle C corresponding to each sampling point into the first formula to obtain the target position of the rotation axis at that sampling point.

[0026] Substitute the cumulative rotation angle C corresponding to each sampling point into the second formula to obtain the target position of the translation axis at that sampling point.

[0027] Optionally, the number of sampling points N and the cumulative rotation angle corresponding to the m-th sampling point are... Determined in the following ways:

[0028]

[0029]

[0030] Where L is the processing distance, which characterizes the total number of circular motions the laser processing point needs to complete around the wafer center, in units of revolutions; V is the processing speed, representing the time required to complete one revolution, in units of s / revolution; Δt is the sampling period of the control system, in units of s; and m is the sampling point number.

[0031] Optionally, the drive rotation axis and translation axis are synchronously linked, specifically including:

[0032] Set virtual spindle C1;

[0033] The cumulative rotation angle of the N sampling points is used as the main axis position value, and the target position of the rotation axis corresponding to each sampling point is used as the slave axis value to generate the rotation axis electronic cam curve.

[0034] The translation axis electronic cam curve is generated by using the cumulative rotation angle of the N sampling points as the main axis position value and the translation axis target position corresponding to each sampling point as the slave axis value.

[0035] Control the rotation axis and the translation axis to move to the initial target position corresponding to the cumulative rotation angle C=0;

[0036] Based on the electronic cam curve of the rotary axis and the electronic cam curve of the translation axis, the rotary axis and the translation axis are driven to synchronously move in conjunction with the virtual main axis C1.

[0037] Optionally, when the required edge exposure width is greater than the laser spot diameter, full-width exposure is achieved by executing the method multiple times, specifically including:

[0038] The number of times the method is executed is determined based on the edge exposure width and the laser spot width.

[0039]

[0040] The processing radius during the kth execution is:

[0041]

[0042] Wherein, ⌈⋅⌉ represents rounding up; Where is the wafer radius; n is the number of executions; D is the spot width; k is the sequence number of the current execution (k=1,2,…,n); is the processing radius during the k-th execution; w is the edge exposure width w.

[0043] Secondly, this application provides a wafer eccentricity compensation motion control device, comprising:

[0044] The acquisition unit is used to acquire the processing radius and the eccentricity of the wafer center relative to the turntable center;

[0045] The determining unit is used to obtain the target positions corresponding to the rotation axis and translation axis at each processing progress on the target processing trajectory based on the processing radius and the eccentricity; wherein, the target processing trajectory is a circular trajectory with the wafer center as the center and the processing radius as the radius;

[0046] A control unit, which drives the rotation axis and the translation axis to move synchronously according to the target position;

[0047] The rotation axis is used to drive the turntable to rotate around its own axis, and the axial direction of the rotation axis is perpendicular to the plane where the wafer is located; the translation axis is used to drive the turntable base to move linearly along the Y direction, and the Y direction is perpendicular to the axial direction of the rotation axis.

[0048] Thirdly, this application provides an electronic device, including: a processor, a communication interface, a memory, and a bus, wherein the processor, the communication interface, and the memory communicate with each other through the bus;

[0049] The memory is used to store at least one executable instruction that causes the processor to perform an operation corresponding to the method described in any of the first aspects.

[0050] Fourthly, this application provides a computer-readable storage medium storing computer instructions that, when executed by a processor, cause the processor to perform the method as described in any one of the first aspects.

[0051] Fifthly, this application provides a computer program product including computer instructions that instruct a computing device to perform an operation corresponding to the method described in any of the first aspects.

[0052] As can be seen from the above technical solutions, the wafer eccentricity compensation motion control scheme provided by this application obtains the eccentricity of the wafer center relative to the turntable center, calculates the target positions of the rotation axis and translation axis according to the eccentricity and the processing radius, and drives the rotation axis and translation axis to move synchronously according to the target positions, so that the actual motion trajectory of the laser processing point on the wafer is always a circular trajectory with the wafer center as the center and the processing radius as the radius, effectively compensating for the wafer placement eccentricity error, ensuring the exposure trajectory accuracy, and solving the technical problem of exposure trajectory deviation caused by wafer eccentricity in the prior art. Attached Figure Description

[0053] Figure 1 This is a flowchart of a wafer eccentricity compensation motion control method based on an exemplary embodiment of this application.

[0054] Figure 2 This is a schematic diagram illustrating the eccentric relationship between the wafer and the turntable based on an exemplary embodiment of this application.

[0055] Figure 3 This is a schematic diagram of the cumulative rotation angle of the target processing trajectory based on an exemplary embodiment of this application.

[0056] Figure 4 This is a schematic diagram of multi-pass edge exposure scanning based on an exemplary embodiment of this application.

[0057] Figure 5 This is a schematic diagram of the structure of a wafer eccentricity compensation motion control device based on an exemplary embodiment of this application.

[0058] List of reference numerals in the attached diagram:

[0059] 10: Wafer;

[0060] 20: Turntable;

[0061] O1: Turntable center;

[0062] O2: Wafer center;

[0063] X: X direction;

[0064] Y: Y direction;

[0065] R: Processing radius;

[0066] C: Cumulative turning angle;

[0067] R0: Wafer radius;

[0068] 500: Wafer eccentricity compensation motion control device;

[0069] 51: Acquisition Unit;

[0070] 52: Determine the unit;

[0071] 53: Control unit. Detailed Implementation

[0072] To enable those skilled in the art to better understand the technical solutions in the embodiments of this application, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art should fall within the protection scope of the embodiments of this application.

[0073] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Where there is no conflict between the embodiments, the following embodiments and features can be combined with each other. The steps in the following method embodiments are for illustrative purposes only and are not intended to limit the invention.

[0074] Wafer edge exposure (WEE) is a crucial step in semiconductor photoresist coating and development, used to remove residual photoresist from the wafer edges. If residual photoresist is not removed promptly, it can flow to the back of the wafer, causing contamination, or peel off, affecting the pattern quality of other areas. Therefore, wafer edges must be exposed immediately after spin-coating the photoresist.

[0075] In existing wafer edge exposure processes, due to positioning errors in the robotic arm during wafer placement in the preceding process, an offset occurs between the wafer center O2 and the rotary table center O1. Figure 2 As shown, this causes the trajectory left by the exposure laser on the wafer to deviate from a perfect circle, affecting the exposure accuracy.

[0076] Therefore, how to effectively compensate for wafer placement eccentricity errors while ensuring exposure trajectory accuracy is a technical problem that urgently needs to be solved in this field.

[0077] In view of this, the present disclosure provides a motion control scheme for wafer eccentricity compensation to at least partially solve the above problems.

[0078] The specific implementation of each embodiment of this application will be described in detail below with reference to the accompanying drawings.

[0079] Example 1

[0080] Example 1 provides a wafer eccentricity compensation motion control method, such as... Figure 1 As shown, the method includes the following steps:

[0081] S101: Obtain the processing radius and the eccentricity of the wafer center relative to the turntable center.

[0082] The processing radius refers to the radius of the trajectory of the laser processing point around the center of the wafer, used to characterize the circular path of the laser scanning on the wafer. It should be noted that the processing radius is not strictly equivalent to the physical radius of the wafer, but rather a parameter flexibly set according to specific process requirements. For example, in edge exposure processes, when the required exposure width exceeds the diameter of a single laser spot, seamless stitching coverage of multiple scans can be achieved by setting different processing radii in different execution cycles. This solution is detailed in Example 4.

[0083] Eccentricity refers to the positional deviation caused by the misalignment of the wafer placement position due to robotic arm placement errors in the preceding process, resulting in the wafer center O2 not coinciding with the turntable rotation center O1. For example, eccentricity is represented by (a, b), where a is the deviation of the wafer center O2 relative to the turntable center O1 in the X direction, and b is the deviation in the Y direction, as shown below. Figure 2 As shown, the eccentricity means that when the turntable rotates, the wafer center O2 is not fixed at the turntable center O1. If the rotation axis and translation axis are not compensated in real time, the laser processing point will not be able to move along the circular trajectory centered on the wafer center, causing the processing position to deviate from the design target.

[0084] S103: Based on the processing radius and the eccentricity, obtain the target positions corresponding to the rotation axis and translation axis at each processing progress on the target processing trajectory; wherein, the target processing trajectory is a circular trajectory with the wafer center as the center and the processing radius as the radius.

[0085] like Figure 2 As shown, the rotation axis is the axis that drives the turntable to rotate around its own axis, and the direction of the rotation axis is perpendicular to the plane where the wafer is located (i.e., perpendicular to the XY plane); the translation axis is the axis that drives the turntable base to move linearly along the Y direction, and the direction of the translation axis is the Y direction. Both the X and Y directions are perpendicular to the direction of the rotation axis, and they are perpendicular to each other.

[0086] In this disclosure, the translation axis and the rotation axis are connected in series: the translation axis drives the turntable base to translate along the Y direction, and the rotation axis is mounted on the turntable base, translating along the Y direction with the turntable base while independently rotating around its own axis. Therefore, the actual spatial position of the rotation axis is affected by the displacement of the translation axis, and the movements of the two need to be coordinated to achieve eccentricity compensation.

[0087] It is important to note that in this method, the laser remains stationary throughout the entire processing. The so-called "target processing trajectory" is not the laser's own path of motion, but rather the trajectory formed by the laser processing point relative to the wafer. The principle behind this method is as follows: through a combination of rotation along the rotation axis and translation along the translation axis, the turntable supporting the wafer undergoes a combined motion in space. This causes the laser processing point, which is fixed in position in the world coordinate system, to move in a uniform circular motion relative to the wafer center O2 with the processing radius as its radius, thereby effectively achieving uniform scanning of the target processing trajectory by the laser.

[0088] S105: Drive the rotation axis and the translation axis to move synchronously according to the target position.

[0089] Synchronous linkage refers to the coordinated movement of the rotary axis and the translation axis during the motion process, where their real-time positions strictly follow the correspondence calculated in step S103. This ensures that, under any processing progress, the current position combination of the rotary axis and the translation axis can make the laser processing point accurately fall on the target processing trajectory, rather than each axis moving independently.

[0090] In different implementation methods, the synchronous linkage can be achieved in, but is not limited to, the following ways:

[0091] Method 1: Position synchronization based on electronic cam (Electronic Cam)

[0092] Before processing begins, the target processing trajectory is discretized into N sampling points. The target positions of the rotation axis and translation axis at each sampling point are pre-calculated. The cumulative rotation angle C of the sampling point is used as the main axis position coordinates, and stored as the electronic cam curves of the rotation axis and translation axis, respectively. During processing, a virtual main axis C1 is set. Using the real-time position of C1 (i.e., the cumulative rotation angle C corresponding to the current processing progress) as an index, the rotation axis and translation axis are driven to follow their respective cam curves in real time to output the target position.

[0093] The synchronization reference in this method is the current position of the virtual spindle. When the spindle speed changes due to process requirements, the output positions of the two slave axes still maintain a strict correspondence with the spindle position, and the synchronization relationship is not affected by speed disturbances. This method is the preferred method in this embodiment, and its specific implementation is detailed in Embodiment 3.

[0094] Method 2: Periodic synchronization based on real-time formula computation

[0095] During the machining process, the controller periodically reads or calculates the cumulative rotation angle C corresponding to the current machining progress at a fixed control cycle (e.g., 0.5 ms). In each control cycle, C is substituted into the first and second formulas in real time to calculate the target rotation angle C2 of the rotary axis and the target displacement Y of the translation axis, and the position command is sent to the servo drives of the two axes in real time.

[0096] Method 3: Clock synchronization based on pre-generated time series

[0097] Before processing begins, using time as a parameter and according to the control cycle Δt, the target positions of the rotation axis and translation axis throughout the entire processing are pre-generated into two sets of timestamp position sequences:

[0098]

[0099] in, and These represent the target rotation angle of the rotation axis and the target displacement of the translation axis at the i-th time node, respectively, and are derived from the corresponding cumulative rotation angle. The result is obtained by substituting the first and second formulas.

[0100] During processing, a unified common clock is used as the driving force, at each time node. Simultaneously send the corresponding target position commands to the rotation axis and translation axis respectively. and The two axes receive and execute data in parallel, achieving synchronous linkage based on time.

[0101] Example 2

[0102] Example 2 further illustrates the specific calculation method of the target position in step S103, based on Example 1.

[0103] The eccentricity includes the deviation 'a' of the wafer center O2 relative to the turntable center O1 in the X direction and the deviation 'b' in the Y direction. Both the X and Y directions are perpendicular to the axis of rotation and are mutually perpendicular. Figure 2 As shown.

[0104] like Figure 3 As shown, the initial processing position K is defined as the intersection of the target processing trajectory (a circle with the wafer center O2 as the center and the processing radius R as the radius) and the vertical line parallel to the Y direction passing through the laser, and is located on the negative Y direction side of the wafer center O2. The cumulative rotation angle C is defined as the cumulative rotation angle of the laser processing point P around the wafer center O2 with the initial processing position K as the starting reference point, as shown below. Figure 3As shown. To ensure that the laser is actually located at point K when processing begins, the rotation axis and translation axis need to be moved to the initial target position corresponding to the cumulative rotation angle C=0 before synchronous linkage is started.

[0105] The validity of the first and second formulas below is based on the premise that the cumulative rotation angle C is measured starting from the initial processing position K. If other points are used as the starting reference, the formulas need to be corrected for the corresponding angle offset. Such modifications are all within the scope of protection of this application.

[0106] Based on the machining radius R and the eccentricity (a, b), the target rotation angle of the rotating shaft is obtained using the first formula. :

[0107]

[0108] The target displacement Y of the translation axis is obtained based on the second formula:

[0109]

[0110] Where C is used to characterize the cumulative rotation angle corresponding to each processing progress on the target processing trajectory, such as Figure 3 As shown; Y is used to characterize the target rotation angle of the rotation axis; Y is used to characterize the target position of the translation axis; in the second formula The value is calculated using the first formula.

[0111] In one implementation, the first formula and the second formula are determined in the following manner:

[0112] S201: Establish the wafer coordinate system, turntable coordinate system, turntable base coordinate system, and world coordinate system.

[0113] Among them, the wafer coordinate system is centered on the wafer center. The origin is the turntable coordinate system; the turntable coordinate system is centered at the turntable center. The origin is the coordinate system of the turntable base, which is fixed to the translation axis slider and translates with the Y-axis; the world coordinate system is fixed to the equipment foundation, and the position of the laser is fixed in this coordinate system.

[0114] S203: In the wafer coordinate system, with the wafer center as the origin, the position coordinates of the laser processing point are represented.

[0115] like Figure 3 As shown, with the wafer center Establish a wafer coordinate system with the origin as the origin, and take the initial processing position K as the starting reference point. The homogeneous coordinates of the laser processing point P in the wafer coordinate system are... for:

[0116]

[0117] S205: Based on the eccentricity, the rotation angle of the rotation axis, and the translation amount of the translation axis, perform multi-level coordinate transformations on the position coordinates of the laser processing point to obtain the coordinate expression of the laser processing point in the world coordinate system.

[0118] Specifically, step S205 further includes:

[0119] S2051: Yes Apply a coordinate transformation with a translation of -a in the X direction and a translation of -b in the Y direction (corresponding to...) Figure 2 (As shown by the eccentricity), the homogeneous coordinates of the laser processing point in the turntable coordinate system are obtained. :

[0120]

[0121] S2052: Yes Apply rotation angle to the rotation axis The coordinate transformation yields the homogeneous coordinates of the laser processing point in the turntable base coordinate system. :

[0122]

[0123] S2053: Yes By applying a coordinate transformation with a translational axis displacement Y, the homogeneous coordinates of the laser processing point in the world coordinate system are obtained. :

[0124]

[0125] Wherein, D1 is the coordinate value of the origin of the turntable coordinate system in the Y direction in the world coordinate system when the translation axis displacement Y=0. It is determined by the mechanical structure of the equipment and remains unchanged during the processing.

[0126] S207: With the fixed position of the laser in the world coordinate system as a constraint, let each component of the coordinate expression be equal to the fixed coordinates of the laser, solve the simultaneous equations, and obtain the first formula and the second formula.

[0127] Since the laser remains stationary throughout the entire processing, its X-axis coordinate in the world coordinate system is fixed at 0, and its Y-axis coordinate is fixed at D1 − R. Therefore:

[0128]

[0129] Given the X components, let the first component equal to 0:

[0130]

[0131] Solving for the first formula yields the solution.

[0132] Given the Y components, let the second component equal D1 − R:

[0133]

[0134] Solving for the second formula yields the solution.

[0135] Example 3

[0136] Example 3 further illustrates the specific implementation of steps S103 and S105 based on Example 2.

[0137] In one implementation, step S103 is further implemented as follows:

[0138] S1031: Discretize the target processing trajectory into N sampling points, each sampling point being characterized by its cumulative rotation angle C relative to the initial processing position K;

[0139] S1033: Substitute the cumulative rotation angle C corresponding to each sampling point into the first formula to obtain the target rotation angle of the rotation axis at that sampling point, which is used as the target position of the rotation axis at that point.

[0140] S1035: Substitute the cumulative rotation angle C corresponding to each sampling point into the second formula to obtain the target displacement of the translation axis at that sampling point, which is used as the target position of the translation axis at that point.

[0141] In one embodiment, the number of sampling points N is determined based on the total processing distance, the sampling period of the control system, and the processing speed. Wherein, the processing distance L (unit: revolutions) represents the total number of revolutions the laser processing point needs to complete around the wafer center; the processing speed V (unit: s / revolution) represents the time required to complete one revolution; and Δt is the position update sampling period of the control system (unit: s).

[0142] The total processing time T is:

[0143] T=L×V

[0144] The total number of sampling points N is:

[0145]

[0146] Taking L=2 revolutions, V=8 s / revolution, and Δt=0.5×10⁻³ s as an example, then T=16 s and N=32000 sampling points. The larger N is, the higher the discretization accuracy, the smoother the cam curve, and the higher the tracking accuracy of the axis motion.

[0147] Specifically, the cumulative turning angle corresponding to the m-th sampling point (m=1,2,…,N) for:

[0148]

[0149] Will Substituting into the first formula, we obtain the target rotation angle of the rotation axis at that sampling point. ;Will Substituting into the second formula, we obtain the target displacement of the translation axis at the sampling point. .

[0150] In one implementation, step S105 includes the following sub-steps:

[0151] S1051: Configure virtual spindle C1;

[0152] Configure virtual spindle C1 as a common reference spindle for synchronous linkage of the rotation and translation axes. Virtual spindle C1 does not correspond to any physical motor; its position value is used to characterize the current processing progress (i.e., the cumulative rotation angle C of laser processing point P from point K). Both slave axes take the real-time position of C1 as input and output the target position following their respective cam curves. Step S1051 is logically executed before S1053 and S1055 because the spindle position value of the cam curve needs to be assigned based on the displacement dimensions and range of C1.

[0153] S1053: Cumulative rotation angle based on N sampling points (m=1,2,…,N) represents the principal axis position coordinates, and the target rotation angle of the rotation axis corresponding to each sampling point is used. Generate the rotary axis electronic cam curve from the axis position coordinates.

[0154] S1055: Cumulative rotation angle based on N sampling points (m=1,2,…,N) represents the principal axis position coordinates, and the target displacement of the translation axis corresponding to each sampling point is used. Generate the translation axis electronic cam curve from the axis position coordinates.

[0155] There is no execution order dependency between S1053 and S1055; they can be executed sequentially or in parallel. Both must be completed before S1057.

[0156] S1057: Control the rotation axis and the translation axis to move to the initial target position corresponding to the cumulative rotation angle C=0. Specifically, substitute the cumulative rotation angle C=0 into the first formula and the second formula respectively to calculate the initial target position corresponding to the rotation axis and the translation axis at the initial processing position K; control the rotation axis and the translation axis to move to their respective initial target positions.

[0157] The purpose of this step is to eliminate the positional step when the cam starts: due to the eccentricity, the initial target position is usually a non-zero value. If this step is not performed, the shaft will directly enter the cam following state from the current position, resulting in a sudden position change, which will lead to mechanical shock or deviation of the initial trajectory.

[0158] S1059: Based on the electronic cam curve of the rotary axis and the electronic cam curve of the translation axis, drive the rotary axis and the translation axis to synchronously move in conjunction with the virtual main axis C1.

[0159] The electronic cam curve of the rotary axis is attached to the rotary axis, and the electronic cam curve of the translation axis is attached to the translation axis; the virtual spindle is driven to move according to the set distance and speed, and the rotary axis and the translation axis follow their respective cam curves in real time to output the target position, so as to realize the synchronous linkage between the two relative to the virtual spindle.

[0160] When the process requires adjustment of the single-turn machining time V, since the electronic cam curve uses the cumulative rotation angle C (i.e., the position of the virtual spindle C1) as the index coordinate, the output position of the rotation axis and translation axis at any given time is uniquely determined by the current position of C1, regardless of the speed of C1. Therefore, if only the machining speed needs to be changed without changing the sampling density per unit number of turns, only the speed setting value of the virtual spindle C1 needs to be modified accordingly, and the cam curve data itself does not need to be recalculated. If the sampling density is adjusted at the same time (i.e., N is recalculated according to the new V), then the cam data needs to be regenerated according to steps S1031 to S1035, but the mathematical forms of the first and second formulas themselves do not change with the speed change, and only the new N value needs to be substituted into the calculation.

[0161] Taking the above parameters as an example, if the single-cycle processing time needs to be adjusted from V=8 s / cycle to V=4 s / cycle (the processing speed is doubled), under the premise of keeping the sampling density unchanged, it is only necessary to double the movement speed of the virtual spindle C1. The cam curve data does not need to be regenerated, and the synchronization accuracy is not affected.

[0162] In one implementation, when the number of N sampling points exceeds the maximum number of points M supported by a single electronic cam data block, the rotary axis electronic cam curve and the translation axis electronic cam curve are respectively divided into ⌈N / M⌉ segment cam data blocks, which are switched sequentially according to the processing progress to ensure full cam coverage.

[0163] Taking N=32000 and M=10000 as an example, it needs to be divided into ⌈32000 / 10000⌉=4 segments of cam data blocks. The sampling point range corresponding to each segment is as follows:

[0164] Segment number Sampling point range Points Paragraph 1 Points 1-10000 10000 Paragraph 2 Points 10001-20000 10000 Paragraph 3 Points 20001-30000 10000 Paragraph 4 Points 30001 to 32000 2000

[0165] Example 4

[0166] Example 4, based on Examples 1 to 3, further illustrates how to achieve full-width coverage exposure by executing the method multiple times when the required edge exposure width is greater than the laser spot diameter.

[0167] Because the laser spot is square, its effective coverage width (i.e., spot width D) in the radial direction of the wafer is limited. When the edge exposure width w required by the process is greater than D, a single processing cannot completely cover the target area. It is necessary to execute this method multiple times, each time using a different processing radius, to achieve full-width splicing coverage with multiple circular scanning trajectories.

[0168] The method in this embodiment specifically includes:

[0169] The number of times the method is executed is determined based on the edge exposure width w and the laser spot width D.

[0170]

[0171] Where ⌈⋅⌉ represents rounding up to ensure that the actual coverage width is not less than the required edge exposure width w.

[0172] Where the processing radius during the kth execution for:

[0173]

[0174] in, Where is the wafer radius; n is the number of executions; D is the spot width; k is the sequence number of the current execution (k=1,2,…,n); The processing radius is the value at the kth execution.

[0175] It is understandable that both overlapping exposure and missed exposure can cause process defects. However, the method provided in this embodiment sets the processing radius starting from the inner boundary of the exposure area (located at a distance R−w from the wafer center), arranging n scanning tracks sequentially outwards. The spacing between adjacent tracks is equal to the spot width D. The laser spots of each track are connected end-to-end in the radial direction, achieving seamless full-width coverage without overlapping exposure or missed areas. The actual exposure coverage width on the wafer is equal to the required edge exposure width w, satisfying the process requirements. When n×D>w, the portion of the outermost scanning band that extends beyond the wafer edge (width n×D−w) is outside the wafer and does not affect the processing result.

[0176] The execution order of each circle is unrestricted. They can be executed sequentially from the inside out in the order of k=1,2,…,n, or sequentially from the outside in in the order of k=n,n−1,…,1, or any other order. Each circle is independent of the others, and the execution order does not affect the final coverage effect.

[0177] Taking w=5 mm and D=3 mm as an example:

[0178]

[0179]

[0180]

[0181] like Figure 4 As shown, the first ring (orange) covers [ -5, -2], the second ring (blue) covers [ -2, +1], two rings in radial position The -2 section is perfectly aligned end-to-end, with no overlap or gaps. The actual exposure coverage width on the wafer is 5 mm, meeting the process requirements. The portion of the outermost scan band that extends beyond the wafer edge ([... , +1] (1 mm wide) is located outside the wafer and does not affect the processing result.

[0182] Example 5

[0183] Example 5 provides a wafer eccentricity compensation motion control device 500, which includes an acquisition unit 51, a determination unit 52, and a control unit 53.

[0184] Acquisition unit 51: used to acquire the processing radius and the eccentricity of the wafer center relative to the turntable center; for details of the specific implementation, please refer to Embodiment 1, which will not be repeated here.

[0185] Determining unit 52: used to obtain the target position corresponding to the rotation axis and translation axis at each processing progress on the target processing trajectory according to the processing radius and the eccentricity; wherein, the target processing trajectory is a circular trajectory with the wafer center as the center and the processing radius as the radius; the specific calculation method of the target position is detailed in Embodiments 2 and 3, and will not be repeated here.

[0186] Control unit 53: used to drive the rotation axis and the translation axis to move synchronously according to the target position; the specific implementation of the synchronous linkage is detailed in Embodiment 3, and will not be repeated here.

[0187] The rotation axis drives the turntable to rotate around its own axis, with the axis of rotation perpendicular to the plane of the wafer. The translation axis drives the turntable base to move linearly along the Y-direction, which is perpendicular to the axis of rotation. The rotation axis is mounted on the turntable base, and the translation axis and rotation axis are connected in series. The displacement of the translation axis directly affects the actual spatial position of the rotation axis in the world coordinate system, and the two need to be coordinated to achieve eccentricity compensation. The laser remains stationary throughout the processing, and its position in the world coordinate system remains unchanged.

[0188] In one embodiment, the acquisition unit 51, the determination unit 52, and the control unit 53 are integrated into the same motion controller and implemented as a software functional module; the rotation axis and the translation axis are each equipped with a servo motor and a corresponding servo driver, the motion controller outputs position commands to each servo driver, and the servo driver drives the corresponding motor to execute, thereby realizing precise control of the motion of each axis.

[0189] In one embodiment, when the required edge exposure width w is greater than the laser spot width D, the device 500 further includes a processing radius planning unit, used to determine the number of executions n and the processing radius corresponding to each execution based on the edge exposure width w and the laser spot width D. and the radius of each processing step The data is sequentially provided to the acquisition unit; the acquisition unit 51, the determination unit 52, and the control unit 53 are configured with processing radii for each operation. As input, each execution is completed independently until all n executions are completed, achieving seamless full-width coverage of the target exposure area; the order of each execution is not restricted, and the specific implementation method is detailed in Example 4, which will not be repeated here.

[0190] Example 6

[0191] Example 6 provides an electronic device. The specific embodiments of this application do not limit the specific implementation of the electronic device. The electronic device provided in this application includes: a processor, a communications interface, memory, and a bus. Wherein:

[0192] The processor, communication interface, and memory communicate with each other via a bus.

[0193] A communication interface is used to communicate with other electronic devices or servers.

[0194] The processor is used to execute programs, specifically the steps in the aforementioned embodiment 1 or embodiment 2.

[0195] Specifically, the program may include program code, which includes computer operation instructions.

[0196] The processor may be a central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of this application. The one or more processors included in the smart device may be processors of the same type, such as one or more CPUs; or they may be processors of different types, such as one or more CPUs and one or more ASICs.

[0197] Memory is used to store programs. Memory may include high-speed RAM, and may also include non-volatile memory, such as at least one disk drive.

[0198] Specifically, the program can be used to cause the processor to execute the relevant steps in the aforementioned embodiments 1 to 4.

[0199] The specific implementation of each step in the program can be found in the corresponding descriptions of the steps in the above method embodiments, and will not be repeated here. Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working process of the devices and modules described above can be referred to the corresponding process descriptions in the foregoing method embodiments, and will not be repeated here.

[0200] Example 7

[0201] Example 7 provides a computer-readable storage medium storing instructions for causing a machine to perform the methods described in Examples 1-4 above. Specifically, a system or apparatus equipped with a storage medium storing software program code that implements the functions of the methods described in Examples 1-4 above, and enabling the computer (or CPU or MPU) of the system or apparatus to read and execute the program code stored in the storage medium.

[0202] In this case, the program code read from the storage medium can itself implement the function of any of the above embodiments, and therefore the program code and the storage medium storing the program code constitute part of this application.

[0203] Storage media embodiments for providing program code include floppy disks, hard disks, magneto-optical disks, optical disks (such as CD-ROM, CD-R, CD-RW, DVD-ROM, DVD-RAM, DVD-RW, DVD+RW), magnetic tapes, non-volatile memory cards, and ROMs. Alternatively, program code can be downloaded from a server computer via a communication network.

[0204] Example 8

[0205] Example 8 provides a computer program product including computer instructions that instruct a computing device to perform any corresponding operation in any of the methods of any of the preceding Examples 1 to 4.

[0206] It should be noted that, depending on the implementation needs, the various components / steps described in the embodiments of this application can be broken down into more components / steps, or two or more components / steps or parts of the operation of components / steps can be combined into new components / steps to achieve the purpose of the embodiments of this application.

[0207] The methods described in the embodiments of this application can be implemented in hardware, firmware, or as software or computer code that can be stored in a recording medium (such as a CD-ROM, RAM, floppy disk, hard disk, or magneto-optical disk), or as computer code downloaded over a network that is originally stored in a remote recording medium or a non-transitory machine-readable medium and will be stored in a local recording medium. Thus, the methods described herein can be processed by software stored on a recording medium using a general-purpose computer, a dedicated processor, or programmable or dedicated hardware (such as an ASIC or FPGA). It is understood that the computer, processor, microprocessor controller, or programmable hardware includes storage components (e.g., RAM, ROM, flash memory, etc.) capable of storing or receiving software or computer code, which, when accessed and executed by the computer, processor, or hardware, implements the methods described herein. Furthermore, when a general-purpose computer accesses code used to implement the methods shown herein, the execution of the code transforms the general-purpose computer into a dedicated computer for executing the methods shown herein.

[0208] It should be noted that not all steps and modules in the above processes and system structure diagrams are mandatory; some steps or modules can be omitted as needed. The execution order of each step is not fixed and can be adjusted as required. The system structure described in the above embodiments can be a physical structure or a logical structure. That is, some modules may be implemented by the same physical entity, or some modules may be implemented by multiple physical entities, or they may be jointly implemented by certain components in multiple independent devices.

[0209] In this patent application, nouns and pronouns relating to people are not limited to specific genders.

[0210] In the above embodiments, the hardware modules can be implemented mechanically or electrically. For example, a hardware module may include permanent, dedicated circuitry or logic (such as a dedicated processor, FPGA, or ASIC) to perform the corresponding operations. The hardware module may also include programmable logic or circuitry (such as a general-purpose processor or other programmable processor), which can be temporarily configured by software to perform the corresponding operations. The specific implementation method (mechanical, dedicated, permanent circuitry, or temporarily configured circuitry) can be determined based on cost and time considerations.

[0211] The present invention has been shown and described in detail above with reference to the accompanying drawings and preferred embodiments. However, the present invention is not limited to these disclosed embodiments. Based on the above multiple embodiments, those skilled in the art will know that more embodiments of the present invention can be obtained by combining the code review methods in the different embodiments above. These embodiments are also within the protection scope of the present invention.

Claims

1. A wafer eccentricity compensation motion control method, characterized in that, Includes the following steps: Obtain the processing radius and the eccentricity of the wafer center relative to the turntable center; Based on the processing radius and the eccentricity, the target positions corresponding to the rotation axis and translation axis at each processing progress on the target processing trajectory are obtained; wherein, the target processing trajectory is a circular trajectory with the wafer center as the center and the processing radius as the radius; Based on the target position, drive the rotation axis and the translation axis to move synchronously. The rotation axis is used to drive the turntable to rotate around its own axis, and the axial direction of the rotation axis is perpendicular to the plane where the wafer is located; the translation axis is used to drive the turntable base to move linearly along the Y direction, and the Y direction is perpendicular to the axial direction of the rotation axis.

2. The wafer eccentricity compensation motion control method as described in claim 1, characterized in that, The eccentricity includes the deviation 'a' of the wafer center relative to the turntable center in the X direction and the deviation 'b' in the Y direction; both the X direction and the Y direction are perpendicular to the axis of rotation and are perpendicular to each other. Based on the machining radius R and the eccentricity, the target position of the rotation axis is obtained using the first formula, and the target position of the translation axis is obtained using the second formula: The first formula is: The second formula is: Where C is used to characterize the cumulative rotation angle corresponding to each processing progress on the target processing trajectory. Y is used to characterize the target position of the rotation axis, and Y is used to characterize the target position of the translation axis. In the second formula... The value is calculated using the first formula.

3. The wafer eccentricity compensation motion control method as described in claim 2, characterized in that, The first formula and the second formula are determined in the following way: Establish the wafer coordinate system, turntable coordinate system, turntable base coordinate system, and world coordinate system; In the wafer coordinate system, the origin is the center of the wafer, which represents the position coordinates of the laser processing point. Based on the eccentricity, the rotation angle of the rotation axis, and the translation amount of the translation axis, the position coordinates of the laser processing point are subjected to multi-level coordinate transformations to obtain the coordinate expression of the laser processing point in the world coordinate system. With the laser's position in the world coordinate system fixed as a constraint, and each component of the coordinate expression equal to the laser's fixed coordinates, the simultaneous equations are solved to obtain the first formula and the second formula.

4. The wafer eccentricity compensation motion control method as described in claim 2, characterized in that, The step of obtaining the target positions corresponding to the rotation axis and translation axis at each processing stage on the target processing trajectory based on the processing radius and the eccentricity is further implemented as follows: The target processing trajectory is discretized into N sampling points, and each sampling point is characterized by its cumulative rotation angle C relative to the initial processing position; Substitute the cumulative rotation angle C corresponding to each sampling point into the first formula to obtain the target position of the rotation axis at that sampling point. Substitute the cumulative rotation angle C corresponding to each sampling point into the second formula to obtain the target position of the translation axis at that sampling point.

5. The wafer eccentricity compensation motion control method as described in claim 4, characterized in that, The number of sampling points N and the cumulative rotation angle corresponding to the m-th sampling point Determined in the following ways: Where L is the processing distance, which characterizes the total number of circular motions the laser processing point needs to complete around the wafer center, in units of revolutions; V is the processing speed, representing the time required to complete one revolution, in units of s / revolution; Δt is the sampling period of the control system, in units of s; and m is the sampling point number.

6. The wafer eccentricity compensation motion control method as described in claim 4, characterized in that, The drive rotation axis and translation axis are synchronously linked, specifically including: Set virtual spindle C1; The cumulative rotation angle of the N sampling points is used as the main axis position value, and the target position of the rotation axis corresponding to each sampling point is used as the slave axis value to generate the rotation axis electronic cam curve. The translation axis electronic cam curve is generated by using the cumulative rotation angle of the N sampling points as the main axis position value and the translation axis target position corresponding to each sampling point as the slave axis value. Control the rotation axis and the translation axis to move to the initial target position corresponding to the cumulative rotation angle C=0; Based on the electronic cam curve of the rotary axis and the electronic cam curve of the translation axis, the rotary axis and the translation axis are driven to synchronously move in conjunction with the virtual main axis C1.

7. The wafer eccentricity compensation motion control method as described in claim 1, characterized in that, When the required edge exposure width is greater than the laser spot diameter, full-width exposure is achieved by executing the method multiple times, specifically including: The number of times the method is executed is determined based on the edge exposure width and the laser spot width. The processing radius during the kth execution is: Wherein, ⌈⋅⌉ represents rounding up; Where is the wafer radius; n is the number of executions; D is the spot width; k is the sequence number of the current execution (k=1,2,…,n); is the processing radius during the k-th execution; w is the edge exposure width w.

8. A wafer eccentricity compensation motion control device (500), characterized in that, include: Acquisition unit (51) is used to acquire the processing radius and the eccentricity of the wafer center relative to the turntable center; The determining unit (52) is used to determine the target position of the rotation axis and the translation axis at each processing progress on the target processing trajectory according to the processing radius and the eccentricity; wherein the target processing trajectory is a circular trajectory with the wafer center as the center and the processing radius as the radius; Control unit (53) is used to drive the rotation axis and the translation axis to move synchronously according to the target position; The rotation axis is used to drive the turntable to rotate around its own axis, and the axial direction of the rotation axis is perpendicular to the plane where the wafer is located; the translation axis is used to drive the turntable base to move linearly along the Y direction, and the Y direction is perpendicular to the axial direction of the rotation axis.

9. An electronic device, characterized in that, include: The processor, the communication interface, the memory, and the bus are connected, and the processor, the communication interface, and the memory communicate with each other via the bus. The memory is used to store at least one executable instruction that causes the processor to perform an operation corresponding to the method as described in any one of claims 1 to 7.

10. A computer-readable storage medium storing computer instructions that, when executed by a processor, cause the processor to perform the method as described in any one of claims 1 to 7.

11. A computer program product comprising computer instructions that instruct a computing device to perform an operation corresponding to the method of any one of claims 1 to 7.

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