Component carrier and method of manufacturing a component carrier

Abstract

A component carrier (100) and a method of manufacturing a component carrier (100) are described. The component carrier (100) comprises a stack (101) comprising at least one electrically conductive layer structure (102) and a plurality of electrically insulating layer structures. An outermost electrically insulating layer structure (103) of the plurality of electrically insulating layer structures comprises segments (201, 202) having a plurality of openings (105), the segments (201, 202) corresponding to a plurality of planar positions at the outermost electrically insulating layer structure (103). Each opening (105) exposes a conductive portion (106) associated with the at least one electrically conductive layer structure (102), wherein each opening (105) has a lateral wall (107) defining a circumferential portion of the respective opening (105). The circumferential portion of each opening (105) has an axis of symmetry (108) perpendicular to a main surface (109) of the electrically conductive layer structure (102).

Description

Technical Field

[0001] The present invention relates to a component carrier including a section having multiple solder resist openings and a method for manufacturing the component carrier. Background Technology

[0002] As product functionality increases, and as these components become increasingly miniaturized, along with the growing number of components to be connected to component carriers such as printed circuit boards, increasingly robust array-like components or packages with multiple components are employed. These array-like components or packages have multiple contacts or connections, with the spacing between these contacts becoming increasingly smaller. In particular, the component carrier should be mechanically stable and electrically reliable, enabling operation even under harsh conditions.

[0003] Specifically, to improve miniaturization, very small and precise conductive structures must be formed in the component carrier. To manufacture the component carrier, a solder mask is applied to the layer structure of the corresponding stack. The solder mask includes solder resist openings (SROs) that expose defined sections of the conductive layer structure of the corresponding stack for further processing. The solder mask acts as a mask, leaving only necessary sections of the layer structure uncovered, which must be processed in subsequent etching or controlled solder application steps. When a controlled solder application step is to be performed, the solder mask is applied to the outermost layer of the stack.

[0004] With the increasing demand for miniaturization, more and more solder mask openings must be formed in the solder mask layer. These openings can be formed directly or indirectly, for example, by a laser beam. However, solder mask openings formed by laser beams in conventional methods have asymmetrical cross-sections and correspondingly uneven extension of the opening walls.

[0005] Figure 7 A conventional component carrier 700 is shown, which includes a corresponding conventional opening 705 in the outermost electrically insulating layer structure 703 of a stack 701 for exposing the conductive portion 706. The stack 701 includes at least one electrically conductive layer structure 702 and an additional electrically insulating layer structure 704. Before forming the conventional opening 705, the surface surrounding the conventional opening 705 is treated with a laser beam to cure and harden the outermost electrically insulating layer structure 703 in the area to be retained on the electrically conductive layer structure 702, such that the opening area remains relatively soft and can subsequently be removed. Figure 7As shown, the conventional laser beam 711 has a non-uniform and different angle relative to the direction perpendicular to the main surface of the outermost electrically insulating layer structure 703. Therefore, due to the angled conventional laser beam 711, the side walls 707, and especially the opposing side walls 707, have different angles relative to the main surface of the electrically conductive layer structure 702, which results in an asymmetrical conventional opening 707 in the conventional opening 705.

[0006] Therefore, some openings may include tapered or irregularly curved sidewalls. The diameter or size of an opening may vary significantly along its vertical extension direction. Furthermore, the dimensional differences between different openings on the same plane of the outermost layer of a stacked component are substantial. Due to asymmetrical and / or non-uniform extension, it can be difficult to even measure the dimensions of these openings. Specifically, because the laser beam in conventional methods may have an angle of inclination relative to the surface of the solder resist layer, the inclined portions of the sidewalls of the corresponding solder resist openings also have an angle of inclination. Because the laser beam in conventional methods has an angle of inclination, the opposing sidewalls of the corresponding solder resist openings have different degrees of extension and different inclinations relative to each other. Moreover, complex laser beam intensity adjustments are necessary to provide a uniform opening radius for the solder resist openings. Summary of the Invention

[0007] It may be necessary to provide a component carrier that can be manufactured efficiently and has multiple high-precision solder mask openings in the solder mask layer.

[0008] According to an exemplary embodiment of the present invention, a component carrier includes a stack having at least one electrically conductive layer structure and a plurality of electrically insulating layer structures. The outermost electrically insulating layer structure (e.g., a solder mask layer) of the plurality of electrically insulating layer structures includes segments having a plurality of openings (solder mask openings (SROs)). These segments correspond to a plurality of planar locations at the outermost electrically insulating layer structure. Each opening exposes a conductive portion associated with at least one electrically conductive layer structure, wherein each opening has a lateral wall defining a circumferential portion of the corresponding opening. The circumferential portion of each opening has an axis of symmetry perpendicular to the main surface of the electrically conductive layer structure. Therefore, the axes of symmetry of the corresponding openings are particularly parallel to each other.

[0009] According to another exemplary embodiment of the present invention, a method for manufacturing a component carrier is provided. The method includes the steps of: providing a stack comprising at least one electrically conductive layer structure and a plurality of electrically insulating layer structures, and forming a plurality of openings in segments of the outermost electrically insulating layer structure of the plurality of electrically insulating layer structures. These segments correspond to a plurality of planar locations of the outermost electrically insulating layer structure. Each opening exposes a conductive portion associated with at least one electrically conductive layer structure, wherein each opening has a lateral wall defining a circumferential portion of the corresponding opening. The circumferential portion of each opening has an axis of symmetry perpendicular to the main surface of the electrically conductive layer structure.

[0010] The term "component carrier" can specifically refer to any support structure capable of accommodating one or more components on and / or within a component carrier to provide mechanical support and / or electrical connection. In other words, a component carrier can be configured as a mechanical and / or electronic carrier for a component. Specifically, a component carrier can be one of the following: a printed circuit board (PCB), an organic interposer, and an integrated circuit (IC) substrate. In particular, a component carrier can also be embodied as a flexible or semi-rigid substrate. A component carrier can also be a hybrid board combining different types of component carriers from the above-described types.

[0011] In the context of this application, the term "stack" may specifically refer to an arrangement of multiple planar layer structures that are mounted in parallel in a stacked manner. For example, a stack may be a laminated stack, that is, a stack comprising multiple layer structures connected by applying heat and / or pressure.

[0012] In the context of this application, the term "main surface" of a body (e.g., a stack or a corresponding insulating or conductive layer structure) may specifically refer to one of the two largest opposing surfaces of the body (e.g., a stack or a corresponding insulating or conductive layer structure), and the "main surface" of the body can be connected by the side walls of the body. The thickness of the body (e.g., a stack or a corresponding insulating or conductive layer structure) may be defined by the vertical distance between the two opposing main surfaces (along the stack direction, defining the direction along the layers attached vertically to each other).

[0013] In the context of this application, the term "layer structure" may specifically refer to continuous layers, patterned layers, or multiple discontinuous islands within a common plane. The layer structure is arranged in an up-and-down stacking manner along the stacking direction (the z-direction used to form the stack).

[0014] The electrical insulation layer structure comprises one or more layers, which include, for example, a fiber-free resin, or layers comprising a resin including, for example, woven or uniformly oriented fillers, such as fibers. The electrical insulation layer structure may include resin and / or glass fibers, so-called prepregs, or FR4 materials.

[0015] In a stack, multiple electrically conductive layer structures can be provided. Copper is a preferred material for these conductive layer structures. Holes penetrating the laminated stack can be formed, for example, by laser drilling or mechanical drilling, and vias or other through-hole connections can be formed by partially or completely filling these holes with an electrically conductive material (particularly copper), allowing the individual conductive layer structures to be interconnected in a desired manner. The filled holes either connect the entire stack (through-hole connections extending through multiple layers or the entire stack), or they connect at least two conductive layers; these filled holes are referred to as vias. Similarly, optical interconnects can be formed through the individual layers of the stack to receive electro-optical circuit boards (EOCBs). In one embodiment, at least one electrically conductive layer structure comprises at least one of the following: copper, aluminum, nickel, silver, gold, palladium, tungsten, magnesium, carbon, (particularly doped) silicon, titanium, and platinum. While copper is generally preferred, other materials or their coated variants, particularly those coated with superconducting materials or conductive polymers, are also acceptable, such as graphene or poly(3,4-ethylenedioxythiophene) (PEDOT).

[0016] The outermost electrically insulating layer structure is directly or indirectly attached to and covers the electrically conductive layer structure, wherein openings expose conductive portions of the electrically conductive layer structure (e.g., vias, traces, pads, pillars, blocks). Therefore, the exposed conductive portions are accessible from the environment for appropriate surface treatments (e.g., surface treatments such as ENIG (non-electroplated nickel immersion gold)) or are filled with a suitable conductive material (e.g., copper). This allows the exposed conductive portions to remain free, so that they can be covered with solder material filling the openings. Alternatively, vias can also be filled with insulating material to form corresponding protrusions on the exposed conductive portions.

[0017] Therefore, the outermost electrically insulating layer structure serves as a solder resist layer applied to the main surface of the electrically conductive layer structure in terms of surface treatment. For example, the outermost electrically insulating layer structure (as a solder resist layer) can be formed on the entire main surface of the electrically conductive layer structure, and then the outermost electrically insulating layer structure can be patterned to form openings, thereby exposing one or more electrically conductive surface portions, which will be used to fill with a conductive material to electrically couple the component carrier to an electronic peripheral device (e.g., a component). The surface portions of the component carrier that are covered by the outermost electrically insulating layer structure can effectively prevent oxidation or corrosion; in particular, the surface portions containing copper can effectively prevent oxidation or corrosion.

[0018] Specifically, the outermost electrical insulating layer structure includes at least two or more structured segments in which corresponding openings can be formed, thus creating specific patterns of the openings. The opening characteristics between the openings in at least two segments can differ from each other. This means, for example, that the opening pattern and / or opening diameter in one segment can differ from the opening pattern and / or diameter in another segment of the electrical insulating layer structure.

[0019] The opening may have a circular, elliptical, or polygonal (e.g., square) periphery (circumferential portion). The opening and its periphery have a symmetrical profile, thus providing a signal connection to the corresponding connection point of the attachable component. Therefore, the axis of symmetry of the opening can be defined as having an extension that is (essentially) perpendicular to the surface of the electrically conductive layer structure. The line of symmetry extends between the main surfaces of the outermost electrically insulating layer structure. In other words, the axis of symmetry is the centerline of the opening, such that opposite segments of the opposite sidewalls of the opening have the same orientation relative to the line of symmetry. If the periphery of the opening is circular or elliptical, the opening profile may be rotationally symmetric, and the line of symmetry may be the axis of rotation.

[0020] The opening can be formed directly (e.g., by drilling a hole in the solder resist using a laser) or indirectly through laser beam processing. Indirect laser processing refers to the laser beam curing and hardening the outermost electrically insulating layer structure (e.g., as the solder resist) in the area to be retained on the electrically conductive layer structure (panel), leaving the opening area relatively soft and removable. To pattern and structure the solder resist layer using an indirect laser process, LDI (Laser Direct Imaging) technology can be used, where a laser beam irradiates directly onto the surrounding area at high resolution without a mask. The laser beam is high enough and precise that the edges of the opening can be precisely exposed without exposing the opening area itself. Alternatively, a mask, such as a glass mask, can be applied over the outermost electrically insulating layer structure, covering and shielding the opening area to be formed, so that only the area around the opening is exposed to the laser beam and thus hardened. In subsequent surface treatment steps (e.g., by development, i.e., chemical cleaning), the material at the opening area of ​​the outermost electrically insulating layer structure can be removed, thereby creating the corresponding solder resist opening. In the subsequent curing step, the solder mask can finally be cured.

[0021] In conventional methods, the laser beam is formed, for example, by a collimated laser beam source, such that each laser beam has a different tilt angle at the focal point of the outermost electrical insulating layer structure. Furthermore, the laser energy received by the outermost electrical insulating layer structure can vary at different planar portions of the outermost electrical insulating layer structure. Therefore, the opening includes an asymmetrical cross-section, varying diameter, and correspondingly non-uniform extension of the opening walls. Consequently, in conventional methods, pre-processing and / or post-processing steps are necessary to achieve the desired opening size with acceptable quality. This includes, for example, compensating for the opening size during the design phase (i.e., intentionally designing openings of different sizes based on the experience of a technician), and / or adjusting processes and parameters in subsequent stages (i.e., changing the thickness of the surface treatment layer or the amount of solder material to be filled into the solder resist opening), ultimately achieving the desired opening size or weld performance with acceptable quality.

[0022] However, according to this method, by providing a laser beam with all (substantially) identical tilt angles (tilt angles orthogonal to the outer main surface of the outermost electrical insulating layer structure) at the focal point of the outermost electrical insulating layer structure, the circumferential portion of each opening has an axis of symmetry perpendicular to the main surface of the electrical conductive layer structure, such that the axes of symmetry of the openings are particularly parallel to each other. Therefore, the openings in each segment of the outermost electrical insulating layer structure can be configured with an axis of symmetry perpendicular to the main surface, having a symmetrical cross-section and uniform extension. This also allows for more precise adjustment of the desired opening diameter of the openings in each segment. Thus, in each defined segment of the outermost electrical insulating layer structure, defined openings can be formed in a single, common laser processing step.

[0023] Furthermore, openings formed by direct or indirect laser beam processing (where the laser beam processing is oriented perpendicular to the outer main surface of the outermost electrical insulating layer structure) differ structurally from conventionally formed openings, where the conventional laser beam is not precisely oriented perpendicular to the outer main surface of the outermost electrical insulating layer structure. The corresponding openings according to the invention have an axis of symmetry perpendicular to the main surface of the conductive layer structure. Furthermore, these corresponding openings according to the invention can be formed as openings with straight, non-curved extending lateral walls, wherein the extending direction of the lateral walls is perpendicular to the outer main surface of the outermost electrical insulating layer structure.

[0024] Detailed description of exemplary embodiments

[0025] Further exemplary embodiments of the component carrier and method will now be described.

[0026] According to an exemplary embodiment, the sidewalls of the openings have the same shape and the same degree of extension relative to each other. Specifically, since the laser beams forming the openings have the same angle of inclination, the opening shape and degree of extension (e.g., opening diameter and opening profile) are the same for all openings. For example, if the laser beams form openings with straight cylindrical, curved, or tapered openings due to the specific intensity of the laser beams, these openings are provided with the same shape. This provides a good basis for subsequent manufacturing processes (e.g., surface treatment and welding) of the outermost electrical insulation layer structure.

[0027] According to another exemplary embodiment, the side walls of at least one opening (in particular, the side walls of all openings) have a uniform shape and extent of extension. Therefore, since the laser beams forming the openings have the same inclination (particularly perpendicular to the main surface of the electrically conductive layer structure), the walls of the openings can be formed with a uniform shape and extent of extension, meaning that no artificial traces such as steps, cracks, pits, or protrusions are formed in the side walls of the openings. This can improve the adhesion of materials (e.g., surface treatment and welding materials) that should be filled into at least one opening during subsequent manufacturing processes.

[0028] According to another exemplary embodiment, the sidewalls of at least one opening (in particular all openings) are formed into cylindrical openings. Specifically, cylindrical openings can be formed by providing a laser beam perpendicular to the main surface of the electrically conductive layer structure and / or by adjusting the intensity of the laser beam accordingly. Therefore, the opening diameters of the openings on the opposing main surfaces of the outermost electrically insulating layer structure are the same, such that the cross-sections of the covering electrically conductive layer structure on one side and the opposite side of the outermost electrically insulating layer structure can be the same.

[0029] According to another exemplary embodiment, the lateral walls of at least one opening (in particular all openings) are substantially perpendicular to the main surface of the electrically conductive layer structure and / or parallel to the axis of symmetry of the opening. Therefore, by providing a laser beam perpendicular to the main surface of the electrically conductive layer structure, the lateral walls of the opening are also perpendicular. Thus, the lateral walls of each opening can have a straight (non-curved) extension between the two opposing main surfaces of the outermost electrically insulating layer structure. Therefore, along the axis of symmetry of the opening, each opening has the same circumferential cross-section. Therefore, a constant and predictable flow of thermal and electrical energy can be defined for each opening (e.g., the advantages obtained through electrically conductive materials and / or similar conductive materials).

[0030] According to another exemplary embodiment, the axis of symmetry of at least one cylindrical opening (in particular all openings) has a tilt tolerance of 10 to 20 degrees relative to the main surface of the electrically conductive layer structure, particularly less than 10 degrees. For example, the opening may have the tilt tolerance of the axis of symmetry defined above due to vibrations during opening formation or due to misalignment of one or more laser beams. However, even with these smaller manufacturing tolerances, the openings in multiple segments can be formed more uniformly and consistently compared to conventional laser beams, where point laser sources form laser beams and each laser beam has a greater degree of tilt.

[0031] According to another exemplary embodiment, at least one opening has a lateral wall forming a conical opening, wherein the inner diameter D1 of the opening closest to the main surface of the conductive layer structure is smaller than the relative outer diameter D2 of the opening at the outermost main surface of the outermost insulating layer structure. Therefore, by forming the corresponding conical opening, a larger radiating portion is formed at the outer diameter of the opening at the outermost main surface of the outermost insulating layer structure, thereby increasing heat dissipation to provide adequate heat flow away from the conductive layer structure, for example. According to the invention, since the laser beam is oriented substantially perpendicular to the main surface of the outermost insulating layer structure, the inclinations of the relative lateral walls within the resulting opening are similar / mirror-like, and the difference between the relative opening diameters is small, particularly compared to conventional methods where the inclinations of the lateral walls of the opening are larger and more varied because the laser beam is incident at a specific flat angle rather than orthogonally to the main surface of the outermost insulating layer structure.

[0032] According to another exemplary embodiment, the inner diameter D1 and the outer diameter D2 have the following relationship:

[0033] -10% * D2 ≤ D2 - D1 ≤ 10% * D2, and

[0034] 110% * D2 ≥ D1 ≥ 90% * D2

[0035] The lateral sidewall with the tapered opening has the following tilt angle x relative to the main surface of the conductive layer structure:

[0036] tan x = 2h / (D2-D1).

[0037] Where h is the height (thickness) of the outermost electrical insulation layer structure.

[0038] Specifically, the conical opening is formed by using a straight laser beam with a vertical tilt angle relative to the outer main surface of the outermost electrical insulating layer structure. Furthermore, due to the vertical laser beam, the taper of the conical opening is very steep according to the formula described above.

[0039] According to another exemplary embodiment, the sidewall of the opening is integrated with the outer main surface of the outermost electrical insulating layer structure via a corresponding transition portion. The outer main surface is defined as the surface opposite to the main surface facing the electrical conductive layer structure. The transition portion may form a line separating the sidewall of the opening and the outer main surface. However, in particular, the transition portion may define a surface region and smooth transition between the main segment of the sidewall of the opening and the corresponding outer main surface having a planar shape, the segment of the opening having a vertical axis of symmetry relative to the main surface.

[0040] According to another exemplary embodiment, the transition portions of the plurality of openings have the same shape, the same degree of extension, and / or the same size. Specifically, since the laser beam can construct the area of ​​the main surface of the outermost electrical insulating layer structure through radiation and exposure, the openings have the same inclination, and all openings have the same shape and degree of extension.

[0041] According to another exemplary embodiment, the transition portion includes rounded corner edges. During manufacturing, the surface area of ​​the transition portion may be less susceptible to saturation from the laser beam, or may be subject to more erosion from chemical agents and / or physical abrasion than the main portion of the opening sidewall. Therefore, as a characteristic feature of the invention, the transition portion includes rounded corner edges. Consequently, rounded corner edges are more resistant to external impacts, particularly because they prevent sharp edges that might easily break.

[0042] According to another exemplary embodiment, the transition portion has a different shape relative to the side wall of the corresponding opening. Specifically, due to the corresponding adjustment of the laser beam forming the opening in the corresponding segment, the shape of the transition portion of the opening in one segment may be different from the shape of the transition portion of the opening in another segment.

[0043] According to another exemplary embodiment, the transition portion extends through the outermost electrical insulation layer structure, and the thickness through which it extends is less than half the thickness of the outermost electrical insulation layer structure. By way of this exemplary embodiment, it is outlined that the transition portion of the corresponding opening does not extend to the central portion of the corresponding lateral wall in the corresponding opening. Therefore, the central portion of the lateral wall of the opening can be straight, and only the corresponding transition portion can have, for example, a rounded edge.

[0044] According to another exemplary embodiment, multiple openings have substantially the same planar extension, particularly having the same diameter. Specifically, openings within a segment and within the same segment can have the same diameter. However, openings in at least two or all segments of an electrical insulation layer structure can have the same diameter, while the patterns of individual openings in different segments can, for example, differ. This provides the advantage of enabling high-density (small opening diameter) segments for signal transmission and suitable segments for power / grounding connections (including lower-density but larger diameter segments).

[0045] According to another exemplary embodiment, the difference in planar extension of the openings in one segment of the section is less than 0.1%, and in particular, the difference in diameter of the openings in one segment of the section is less than 0.1%. Specifically, since the laser beams forming the openings have the same inclination (particularly perpendicular to the main surface of the electrically conductive layer structure), the diameter can be formed with high precision, resulting in low manufacturing tolerances, such that the difference in opening diameter is less than 0.1%. This provides a good basis for subsequent manufacturing processes (e.g., surface finishing and welding) of the outermost electrically insulating layer structure.

[0046] According to another exemplary embodiment, the segment including the opening extends along the entire outermost electrical insulation layer structure. Therefore, the complete outermost electrical insulation layer structure is classified into at least two segments. In other words, the outermost electrical insulation layer structure does not include any area not classified into one of the segments.

[0047] According to another exemplary embodiment, the segment includes a segment and additional segments, each segment having a plurality of openings and additional openings that expose conductive portions associated with at least one electrically conductive layer structure. In the exemplary embodiment, the openings and additional openings have different dimensions relative to each other, particularly different diameters. Therefore, the electrically conductive layer structure can cover an outermost electrically insulating layer structure, wherein the outermost electrically insulating layer structure includes at least two segments, particularly a plurality of segments, defined in a specific pattern along the main surface of the outermost electrically insulating layer structure. Each segment includes a corresponding set of openings. The openings in one segment may have different sizes and / or distributions than the additional openings in another segment. These segments may be arranged adjacent to each other. Furthermore, these segments may be arranged spaced apart from each other. For example, surface segments of the electrically insulating layer structure may be arranged between the segment and the additional segments. Thus, by providing different segments with openings of different sizes and / or distributions, multiple different exposed conductive portions located beneath the electrically conductive layer structure can be provided for different applications. For example, in a first section with multiple openings of small diameter and high density, highly complex components can be arranged, which have multiple signal connection points with the component carrier. In another section with only a few openings, but these openings have large diameters and low density, components requiring higher heat transfer or higher current can be connected to and / or coupled to the component carrier.

[0048] According to another exemplary embodiment, the thickness of the outermost electrical insulating layer structure in this segment differs from the thickness of the outermost electrical insulating layer structure in other segments. Therefore, since the laser beam can have a vertical tilt relative to the outer surface of the outermost electrical insulating layer structure, the thickness of the outermost electrical insulating layer structure does not affect the penetration angle of the laser beam. Thus, the thickness of the outermost electrical insulating layer structure can vary, and the openings in both the thinner and thicker regions of the outermost electrical insulating layer structure can have the same opening shape and size. Conversely, if the laser beam has a tilt angle other than 90° relative to the outer surface of the outermost electrical insulating layer structure, the shape of the opening in the thicker region of the outermost electrical insulating layer structure will differ from the opening shape in the thinner region of the outermost electrical insulating layer structure.

[0049] According to another exemplary embodiment, the shape and extent of extension of the side walls of the corresponding opening and the other opening are the same. Therefore, since the laser beam has a vertical inclination relative to the outer surface of the outermost electrical insulating layer structure, the shape and extent of extension of the side walls of the openings in different sections can be the same.

[0050] According to another exemplary embodiment, the difference between the dimensions of the opening and other openings (particularly the diameter, the direction of the axis of symmetry, and / or the extent and shape of the lateral walls) is less than 0.1%. Specifically, since the laser beams forming the openings have the same inclination (particularly perpendicular to the main surface of the electrically conductive layer structure), the dimensions of the openings can be formed with high precision, thus allowing for low manufacturing tolerances, such that the difference in opening diameter is less than 0.1%.

[0051] According to another exemplary embodiment, each opening in the segment has a first volume, while each of the other openings in the other segment has a second volume, wherein the volume of the opening in the segment and the other volume of the other opening in the other segment differ from each other by less than 1%, and in particular, the volumes of the openings and the other openings are equal. This has the advantage that, in further manufacturing steps, the same amount of filler medium (e.g., solder balls) can be placed in the openings, thereby achieving a highly reliable connection with subsequently assembled components. As described above, since the laser beams forming the openings have the same inclination (in particular, perpendicular to the main surface of the electrically conductive layer structure), the volume of the openings can be formed with high precision, resulting in low manufacturing tolerances, such that the difference in opening diameter is less than 0.1%.

[0052] According to another exemplary embodiment, each opening in at least one of the segments is filled with an electrically conductive connecting material to form, in particular, electrically conductive protrusions, especially solder material balls. The electrically conductive connecting material can be, in particular, copper, aluminum, nickel, silver, gold, palladium, tungsten, magnesium, carbon, (especially doped) silicon, titanium, and platinum. While copper is generally preferred, other materials or their coated variations, particularly those coated with superconducting materials or conductive polymers, are also possible, such as graphene or poly(3,4-ethylenedioxythiophene) (PEDOT). Specifically, by providing electrically conductive protrusions, especially solder material balls, corresponding connections to components fixed to the surface of an external electrical insulating layer structure can be provided.

[0053] According to another exemplary embodiment, the volumes of electrically conductive connecting material protruding from the respective openings (in one segment or in other segments) are equal. Specifically, since the openings are precisely formed by a laser beam with a vertical inclination relative to the outer main surface of the outermost electrical insulating layer structure, the shape and volume of the openings can be formed equally, thereby also allowing for very precise formation of the solder material filling volume and protrusion amount.

[0054] According to another exemplary embodiment, each of the additional openings in the additional segment is filled with an additional electrically conductive connecting material to specifically form an electrically conductive protrusion, particularly a solder ball. Specifically, the volume of the electrically conductive connecting material protruding from the corresponding opening of the segment and the additional volume of the additional electrically conductive connecting material protruding from the corresponding additional opening of the additional segment are different from each other. Therefore, one segment of the solder material protrusion segment is higher and contains more material than the other segment. Thus, the corresponding protruding solder material can be precisely adjusted relative to the corresponding coupling component.

[0055] According to another exemplary embodiment, each outermost electrical insulating layer structure is a solder resist layer, wherein the solder resist layer is particularly a solder resist ink or dry film layer. The outermost electrical insulating layer structure used as the solder resist layer can be a planarization layer structure that covers only a portion or all of the main surface of the conductive layer structure. The solder resist material can protect the stack or portions thereof from oxidation or corrosion, particularly protecting surface portions containing metal (e.g., copper). Furthermore, the solder resist layer covers one or more surface portions of the conductive layer structure of the component carrier, on which solder material should not and will not adhere. In short, the material of the solder resist layer can be selected such that solder material will not adhere to or remain on the solder resist-covered surface areas of the stack of component carriers. The solder resist layer, also referred to as a solder mask, can be a thin varnish layer, such as a polymer layer, which can be applied to the conductive layer structure including, for example, surface metal (particularly copper traces of the component carrier, such as a printed circuit board (PCB)) to prevent oxidation and to prevent the formation of solder bridges between closely spaced solder pads. In this context, a weld bridge can be an unintended electrical connection formed between two electrically conductive structures via a solder joint. A solder resist layer can prevent weld bridges. Once applied as a continuous layer to the electrically conductive layer structure of the stack, openings in corresponding sections can be created in the solder resist layer, whereby material will electrically connect to the electrically conductive layer structure of the stack, for example, to connect them to one or more surface-mount components to be welded on the stack. Such openings can be formed by patterning the continuous layers of solder resist on the stack, for example, using the aforementioned laser beam.

[0056] In this embodiment, the material of the outermost electrical insulating layer structure that serves as a solder resist is a wet ink or dry film, and may contain organic materials (e.g., resins) and / or provide the function of a colorant.

[0057] According to another exemplary embodiment, the outermost electrical insulating layer structure is an organic material. For example, the outermost electrical insulating layer structure is made of resin, with or without reinforcing elements, such as (glass) spheres or fibers. Therefore, the outermost electrical insulating layer structure may not be fully cured, particularly uncured or only partially cured, and thus can still be molded.

[0058] According to another exemplary embodiment, multiple openings are configured to be electrically connected to one or more components to form a component assembly.

[0059] One or more components may be surface-mounted onto the stack, particularly onto the outer surface of the outermost electrical insulating layer structure. Alternatively, at least one opening and preferably at least one component are located within a cavity of the stack, which has the advantage of reducing the overall height of the package. In the context of this application, the term "component" may specifically refer to any bulky block rather than a layered block. A component may be an electronic component, such as an active (e.g., a semiconductor chip or semiconductor package) or passive (e.g., a capacitor or inductor) electronic component embedded or to be embedded within a component carrier. However, a component may also be a non-electronic component without electronic functionality. For example, a component may be a component with thermal functionality, such as heat removal and / or heat diffusion functionality. For example, a component may be a block of metal (e.g., copper) and / or a block of ceramic.

[0060] According to another exemplary embodiment of the method, the step of forming a plurality of openings includes: radiating at least one laser beam to a surrounding area of ​​the opening region, causing the surrounding area to harden, and in particular removing material of the outermost electrical insulating layer structure at the opening region where the openings are formed by a wet chemical process (chemical cleaning, development).

[0061] According to another exemplary embodiment of the method, the step of providing at least one laser beam includes scattering the laser beam by a scattering device. The scattering device is configured such that the laser beam is split to provide a plurality of scattered laser beams, wherein each scattered laser beam is formed by reflection at an incident point on a reflective portion of the scattering device (e.g., on a corresponding mirror). The incident points in the scattering device are located at different reflection positions (e.g., at different mirrors) relative to the focal point on the outermost electrical insulating layer structure. The scattered laser beams penetrate different focal points (e.g., opening regions or surrounding regions) on the outermost electrical insulating layer structure of the stack, thereby causing the scattered laser beams (directly or indirectly) to harden the surrounding regions around the plurality of openings, and causing the circumferential portion of each opening to have an axis of symmetry perpendicular to the main surface of the electrically conductive layer structure.

[0062] A scattering device for generating multiple scattered laser beams is a device that receives an incident laser beam and splits or scatters it into multiple laser beams in different directions. The scattered laser beams are further guided by a reflection position in the scattering device. The reflection position may be, in particular, a corresponding mirror that guides the incident laser beam at its incident point to a desired output direction. The output laser beam is guided in such a way that it strikes a desired focal point, particularly the surrounding area, on the outer surface of the outermost electrically insulating layer structure to harden the surrounding area around the multiple openings, thereby constructing the outermost electrically insulating layer structure. Specifically, the output direction is adjusted by the reflector such that the output laser beam is perpendicular to the surface of the outermost electrically insulating layer structure.

[0063] According to another exemplary embodiment, the incident point and focal point define the tilt angle of the laser beam generated by the scattering device relative to the outer main surface of the outermost electrical insulating layer structure, the tilt angle ranging from 89.5 degrees to 90.5 degrees, particularly 90 degrees. Therefore, each scattered laser beam can penetrate the area surrounding the opening region, causing the surrounding region to harden while the opening region remains unhardened. Thus, material in the opening region can be removed in subsequent steps. The openings in the opening regions have an axis of symmetry perpendicular to the main surface of the outermost electrical insulating layer structure.

[0064] According to another exemplary embodiment, the scattering device includes a plurality of mirrors (each mirror defining a reflective portion) for generating a scattered laser beam, wherein each scattered laser beam is reflected at an incident point on the mirror.

[0065] According to another exemplary embodiment, the scattering device is configured to adjust the incident point to different positions (and, for example, orientations) relative to the planar extension of the outermost electrically insulating layer structure, particularly by moving and adjusting a reflector. The reflector can be controlled with a corresponding activator configured to adjust the orientation of the respective reflector and / or move the reflector along the scattering device. Therefore, the orientation of the reflector and / or the position of the reflector relative to the focal point on the outer surface of the outermost electrically insulating layer structure is adjustable, thereby allowing adjustment of the laser beam energy received in the corresponding segment.

[0066] According to another exemplary embodiment, the scattering device generates 100 to 250 scattered laser beams per square millimeter, thereby creating a corresponding number of incident points above the outermost electrical insulating layer structure. Thus, a very precise and structured pattern of the surrounding area and the opening area can be exposed to the laser beams, allowing for the formation of a large number of openings with very precise dimensions, for example, after development via a chemical cleaning step. Therefore, in the exemplary embodiment, the scattering device may include, for example, 100 to 250 mirrors to generate a corresponding number of incident points and focal points, respectively. This can significantly increase the manufacturing flexibility of forming high-density, very precise openings in the outermost electrical insulating layer structure according to a corresponding desired pattern.

[0067] In this implementation, the component carrier is shaped as a plate. This contributes to a compact design, whereby the component carrier still provides a large base for the mounting components on it. Furthermore, in particular, a bare die, as an example of an embedded electronic component, can be easily embedded into a thin plate, such as a printed circuit board, due to its small thickness.

[0068] In one embodiment, the component carrier is configured as one of a printed circuit board, a substrate (particularly an IC substrate), and an interposer.

[0069] In the context of this application, the term "printed circuit board (PCB)" may specifically refer to a plate-shaped component carrier formed by laminating multiple electrically conductive layer structures with multiple electrically insulating layer structures, for example, by applying pressure and / or by supplying heat. As preferred materials for PCB technology, the electrically conductive layer structures are made of copper, while the electrically insulating layer structures may include resin and / or glass fiber, so-called prepreg, or FR4 material. The various electrically conductive layer structures can be connected to each other in a desired manner by forming holes through the laminate, for example, by laser drilling or mechanical drilling, and by partially or completely filling these holes with an electrically conductive material (particularly copper), thereby forming vias or any other through-hole connections. The filled holes connect the entire stack (i.e., through-hole connections extending through multiple layers or the entire stack), or the filled holes connect at least two electrically conductive layers, i.e., so-called vias. Similarly, optical interconnects may be formed through the various layers of the stack to receive electro-optical circuit boards (EOCBs). In addition to being able to embed one or more components, printed circuit boards are typically configured to house one or more components on one or both opposite surfaces of a plate-shaped printed circuit board. The one or more components can be soldered to their respective main surfaces. The dielectric portions of the PCB may include resin with reinforcing fibers (e.g., glass fiber).

[0070] In the context of this application, the term "substrate" can specifically refer to a small component carrier. A substrate can be a relatively small component carrier relative to a PCB, on which one or more components can be mounted, and which can serve as a connection medium between one or more chips and another PCB. For example, the substrate can have approximately the same size as the components (particularly electronic components) to be mounted on it (e.g., in the case of a chip-scale package (CSP)). In other embodiments, the substrate can be much larger than the components arranged on it (e.g., in a flip-chip ball grid array (FCBGA) configuration). More specifically, a substrate can be understood as a carrier for electrical connections or electrical networks, and a component carrier comparable to a printed circuit board (PCB) but with a considerably higher density of lateral and / or vertically arranged connections. Lateral connections are, for example, conductive paths, while vertical connections can be, for example, drilled holes. These lateral and / or vertical connections are arranged within the substrate and are used to provide electrical, thermal, and / or mechanical connections between components (e.g., bare wafers), particularly IC chips, and printed circuit boards or intermediate printed circuit boards, whether the components are housed or not. Therefore, the term "substrate" also includes "IC substrate." The dielectric portion of the substrate may include resin with reinforcing particles (e.g., reinforcing spheres, particularly glass spheres).

[0071] The substrate or interlayer may include or be composed of at least one of the following: glass; silicon (Si) and / or photoimageable or dry-etchable organic materials, such as epoxy stacked materials (e.g., epoxy stacked films); or polymer compounds (polymer compounds may or may not include photosensitive and / or thermosensitive molecules), such as polyimide or polybenzoxazole.

[0072] In embodiments, the at least one electrically insulating layer structure comprises at least one of the following: resins or polymers, such as epoxy resins, cyanate ester resins, benzocyclobutene resins, bismaleimide-triazine resins, polyphenylene derivatives (e.g., polyphenylene ether-based, PPE), polyimide (PI), polyamide (PA), liquid crystal polymers (LCP), polytetrafluoroethylene (PTFE), and / or combinations thereof. Reinforcing structures (i.e., fillers) such as meshes, fibers, spheres, or other types of filler particles made of glass (multilayer glass) may also be used to form the composite. The semi-cured resin combined with the reinforcing agent, such as fibers impregnated with the aforementioned resins, is called a prepreg. These prepregs are typically named after their properties, such as FR4 or FR5, which describe their flame-retardant properties. While prepregs, particularly FR4, are generally preferred for rigid PCBs, other materials, particularly epoxy-based stacking materials (e.g., stacked films) or photosensitive dielectric materials, may also be used. For high-frequency applications, high-frequency materials such as polytetrafluoroethylene, liquid crystal polymers, and / or cyanate resins are preferred. In addition to these polymers, low-temperature co-fired ceramics (LTCC) or other low, very low, or ultra-low DK materials can be used as electrical insulation structures in component carriers.

[0073] In embodiments, the at least one electrically conductive layer structure comprises at least one of the following: copper, aluminum, nickel, silver, gold, palladium, tungsten, magnesium, carbon, (particularly doped) silicon, titanium, and platinum. Although copper is generally preferred, other materials or coating variations thereof, particularly those coated with superconducting materials or conductive polymers, are also possible, such as graphene or poly(3,4-ethylenedioxythiophene) (PEDOT).

[0074] At least one component may be embedded in and / or surface-mounted on the stack. This component and / or at least one additional component may be selected from at least one of the following: non-electrically conductive inlays, electrically conductive inlays (e.g., metallic inlays, preferably copper or aluminum), heat transfer units (e.g., heat pipes), optical guiding elements (e.g., optical waveguides or optical conductor connectors), electronic components, or combinations thereof. The inlay may be, for example, a metal block (IMS-inlay) with or without an insulating material coating, which may be embedded or surface-mounted for the purpose of facilitating heat dissipation. Suitable materials are defined by their thermal conductivity, which should be at least 2 W / mK. Such materials are typically based on, but not limited to, metals, metal oxides, and / or ceramics, such as copper, alumina (Al₂O₃), or aluminum nitride (AlN). Other geometries with increased surface area are also frequently used to improve heat exchange capacity. In addition, the components can be active electronic components (implemented with at least one pn junction), passive electronic components such as resistors, inductors or capacitors, electronic chips, storage devices (e.g., DRAM or other data memories), filters, integrated circuits (e.g., field-programmable gate arrays (FPGAs), programmable array logic (PALs), general-purpose array logic (GALs) and complex programmable logic devices (CPLDs)), signal processing components, power management components (e.g., field-effect transistors (FETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), complementary metal-oxide-semiconductor (CMOS) transistors, junction field-effect transistors (JFETs), or insulated-gate field-effect transistors). (IGFET), all of which are based on semiconductor materials such as silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), gallium oxide (Ga2O3), indium gallium arsenide (InGaAs), indium phosphide (InP) and / or any other suitable inorganic compound), optoelectronic interface elements, light-emitting diodes, optocouplers, voltage converters (e.g., DC / DC converters or AC / DC converters), cryptographic components, transmitters and / or receivers, electromechanical transducers, sensors, actuators, microelectromechanical systems (MEMS), microprocessors, capacitors, resistors, inductors, batteries, switches, cameras, antennas, logic chips, and energy harvesting units. However, other components can also be embedded in component carriers. For example, magnetic elements can be used as components. Such magnetic elements can be permanent magnetic elements (e.g., ferromagnetic elements, antiferromagnetic elements, multiferroic elements, or ferrimagnetic elements, such as ferrite cores) or paramagnetic elements. However, the component can also be an IC substrate, an interposer, or another component carrier, such as a board-in-board configuration. The component can be surface-mounted on the component carrier and / or embedded inside the component carrier.In addition, other components, particularly those that generate and emit electromagnetic radiation and / or are sensitive to electromagnetic radiation propagating from the environment, may be used as components.

[0075] In one embodiment, the component carrier obtained from this component carrier structure is a laminated component carrier. In this embodiment, the component carrier is a multilayer composite structure that is stacked and connected together by applying pressure and / or heat.

[0076] After the internal layer structure of the component carrier has been treated, one or more additional electrically insulating and / or electrically conductive layer structures (particularly, through lamination) can be used to symmetrically or asymmetrically cover one main surface or two opposite main surfaces of the treated layer structure. In other words, the stacking of components can continue until the desired number of layers is achieved.

[0077] After the formation of the stacked component with an electrically insulating layer structure and an electrically conductive layer structure is completed, the obtained layer structure or component carrier can be surface treated.

[0078] In terms of surface treatment, a surface treatment portion can be selectively applied to the exposed electrically conductive surface portion (especially openings) of the component carrier. This surface treatment portion can be an electrically conductive covering material on the exposed electrically conductive layer structure (e.g., a pad defining the bottom of the opening, conductive traces, etc., particularly including copper or composed of copper) on the surface of the component carrier. If this exposed electrically conductive layer structure is not protected, the exposed electrically conductive component carrier material (especially copper) will oxidize, resulting in lower reliability of the component carrier. Furthermore, the surface treatment portion can be formed, for example, as a joint between a surface-mount component and the component carrier. The surface treatment portion functions to protect the exposed electrically conductive layer structure (especially copper circuitry), and the surface treatment portion can achieve bonding processing with one or more components, for example, by soldering. Examples of suitable materials for the surface treatment portion are organic solder protectant (OSP), electroless nickel immersion gold (ENIG), electroless nickel immersion palladium immersion gold (ENIPIG), electroless nickel and electroless palladium immersion gold (ENEPIG), gold (especially hard gold), electroless tin (electroless plating and electroplating), nickel-gold, nickel-palladium, etc. In addition, nickel-free materials can be used for surface treatment, especially for high-speed applications. Examples include ISIG (Immersion Silver Gold) and EPAG (Electroplated Palladium Autocatalytic Gold).

[0079] The foregoing limitations and other aspects of the present invention will become apparent by way of examples of embodiments described below and will be explained with reference to these examples. Attached Figure Description

[0080] Figure 1A schematic diagram of a component carrier including a corresponding opening in the outermost electrical insulation layer structure according to an exemplary embodiment of the present invention is shown.

[0081] Figure 2A A schematic diagram of an outermost electrical insulation layer structure including two opening segments according to an exemplary embodiment of the present invention is shown.

[0082] Figure 2B A schematic diagram of the outermost electrical insulation layer structure including multiple opening segments according to an exemplary embodiment of the present invention is shown.

[0083] Figure 3 A schematic diagram of a component carrier including corresponding openings with bends and tapered shapes according to an exemplary embodiment of the present invention is shown.

[0084] Figure 4 A schematic diagram of a component carrier according to an exemplary embodiment of the present invention is shown, the component carrier including corresponding openings having linear extensions and transitions in the outermost electrical insulation layer structure.

[0085] Figure 5 An image of a component carrier with an opening according to an exemplary embodiment of the present invention is shown, the opening having a straight extension and a transition portion.

[0086] Figure 6 An image of a component carrier with an opening having a curved extension is shown according to an exemplary embodiment of the present invention.

[0087] Figure 7 A schematic diagram of a conventional component carrier including a tapered opening is shown.

[0088] The illustrations in the accompanying drawings are schematic. Similar or identical elements have the same reference numerals in different drawings. Detailed Implementation

[0089] Figure 1 A component carrier 100 according to an exemplary embodiment of the present invention is shown. The component carrier 100 includes corresponding openings 105 in an outermost electrically insulating layer structure 103. The component carrier 100 includes a stack 101 having at least one electrically conductive layer structure 102 and a plurality of electrically insulating layer structures 103, 104. The outermost electrically insulating layer structure 103 of the plurality of electrically insulating layer structures 103, 104 includes segments 201, 202 having a plurality of openings 105 (see [link to documentation]). Figure 2A , Figure 2BThe segments 201 and 202 correspond to multiple planar locations at the outermost electrical insulating layer structure 103. Each opening 105 exposes a conductive portion 106 (e.g., via, trace, pad, pillar, block) associated with at least one electrically conductive layer structure 102, wherein each opening 105 has a lateral wall 107 defining a circumferential portion of the corresponding opening 105. The circumferential portion of each opening 105 has an axis of symmetry 108 perpendicular to the main surface 109 of the electrically conductive layer structure 102.

[0090] In the illustrated embodiment, the outermost electrical insulating layer structure 103 is directly attached to and covers the electrical conductive layer structure 102, wherein the opening 105 exposes the conductive portion 106 of the outermost electrical insulating layer structure 103. Therefore, the exposed conductive portion 106 is accessible from the environment for appropriate surface treatment or filling with a suitable conductive material connecting material 110 (e.g., copper).

[0091] The outermost electrical insulating layer structure 103 serves as a solder resist layer applied to the main surface 109 of the electrically conductive layer structure 102 in terms of surface treatment. For example, the outermost electrical insulating layer structure 103 can be formed as a solder resist layer on the entire main surface of the electrically conductive layer structure 102, and then the outermost electrical insulating layer structure 103 can be patterned to form openings 105, thereby exposing one or more electrically conductive surface portions, which will be used to fill with conductive connection material 110 to electrically couple the component carrier 100 to electronic peripheral devices (e.g., components). The solder resist layer is in particular a solder resist ink or dry film layer. The surface portions of the component carrier 100 covered by the outermost electrical insulating layer structure 103 (especially copper-containing surface portions) can be effectively protected from oxidation or corrosion.

[0092] The opening 105 can be formed directly or indirectly by laser beam processing. The laser beam 111 has the same tilt angle at the focal point of the outermost electrically insulating layer structure 103. The tilt angle is orthogonal to the outer main surface of the outermost electrically insulating layer structure 103. Figure 1In this design, opening 105 is indirectly formed by laser beam 111. Laser beam 111 penetrates and exposes the surrounding region 115 of opening region 114, causing the surrounding region 115 to harden while the opening region remains unhardened. The surrounding region 115 defines the area remaining on the electrically conductive layer structure 102, allowing opening region 114 to remain relatively soft and removable. To pattern and structure the outermost electrically insulating layer structure 103 via an indirect laser process, LDI (Laser Direct Imaging) technology can be used, where laser beam 111 directly irradiates the surrounding region 115 at high resolution without a mask. The resolution of laser beam 111 is high enough and precise that the edges of opening 105 are precisely exposed without exposing opening region 114. Alternatively, a mask, such as a glass mask, is applied over the outermost electrical insulating layer structure 103, wherein the mask covers and shields the opening region 114 to form the opening 105, such that only the surrounding region 115 around the opening 105 is exposed to the laser beam 1111 and thus hardened. In a subsequent surface treatment step (e.g., by chemical cleaning), the material of the outermost electrical insulating layer structure 103 is removed, thereby creating the corresponding solder mask opening 105. In a subsequent curing step, the outermost electrical insulating layer structure 103 can be finally cured.

[0093] Therefore, the circumferential portion of each opening 105 has an axis of symmetry 108 perpendicular to the main surface 109 of the electrically conductive layer structure 102. Thus, the openings 105 in each segment 201 of the outermost electrically insulating layer structure 103 have an axis of symmetry 108 perpendicular to the main surface 109, and have a symmetrical cross-section and uniform extension.

[0094] The scattering device 112 is configured such that the initial laser beam is split to provide a plurality of scattered laser beams 111, wherein each scattered laser beam 111 is formed by reflection at an incident point on a reflective portion (e.g., a corresponding mirror 113 of the scattering device 112). The incident points in the scattering device 112 are arranged at different reflection positions relative to the focal point on the outermost electrically insulating layer structure 103, for example, at different mirrors 113. The scattered laser beams 111 penetrate the different focal points on the outermost electrically insulating layer structure 103 of the stack 101, such that the scattered laser beams 111 directly or indirectly form a plurality of openings 105, and such that the circumferential portion of each opening 105 has an axis of symmetry 108 perpendicular to the main surface 109 of the electrically conductive layer structure 102. The corresponding mirror 113 guides the incident laser beam to the desired output direction at the incident point of the mirror 113. The output laser beam 111 is guided so that the desired focal point is hit on the outer surface of the outermost electrically insulating layer structure 103, in order to construct the electrically insulating layer structure 103. Specifically, the output direction is adjusted by the reflector so that the output laser beam is perpendicular to the surface of the outermost electrically insulating layer structure 103.

[0095] The scattering device 112 includes a plurality of mirrors 113, each mirror 113 defining a reflective portion (incident point) for generating a scattered laser beam 111. The scattering device 112 is configured to adjust the incident point to different positions and orientations relative to the plane of the outermost electrically insulating layer structure 103, particularly by moving and adjusting the mirrors 113. Each mirror 113 is controlled by a corresponding activator configured to adjust the orientation of the corresponding mirror 113 and / or move the mirror 113 along the scattering device 112. Therefore, the orientation of the mirror 113 and / or the position of the focal point of the mirror 113 relative to the outer surface of the outermost electrically insulating layer structure 103 is adjustable, thereby allowing adjustment of the laser beam energy received in the surrounding region 115. The scattering device 112 can generate 100 to 250 scattered laser beams per square millimeter, and therefore may include, for example, 100 to 250 mirrors.

[0096] The side walls 107 of the opening 105 in a segment 201 can have the same shape and the same degree of extension. Specifically, since the laser beams forming the openings 105 have the same inclination, the opening shape and degree of extension (e.g., the opening diameter and the shape of the opening 105) are the same for all openings 105.

[0097] The lateral walls 107 of the opening 105 in section 201 have a uniform shape and extent of extension. Therefore, since the laser beams 111 penetrating the surrounding area 115 have the same inclination (particularly perpendicular to the main surface 109 of the electrically conductive layer structure 102), the lateral walls 107 of the opening 105 can be formed with a uniform shape and extent of extension, meaning that no artificial traces such as steps, cracks, pits, or protrusions will be formed in the wall opening. Specifically, opposing lateral walls 107 in an opening 105 (specifically, if the opening 105 has a rectangular cross-section) can have the same shape.

[0098] For example, the sidewalls 107 of the opening 105 in section 201 form a cylindrical opening 105. Specifically, by providing a laser beam 111 perpendicular to the main surface 109 of the electrically conductive layer structure 102, and / or by adjusting the intensity of the laser beam accordingly, and / or by providing a very precise mask (glass mask), the hardening of the interface region between the surrounding region 115 and the opening region 114 can be very precise, such that, for example, after a cleaning step (development), the opening 105 can be precisely shaped into a cylindrical shape. Therefore, the opening diameters of the openings 105 at the opposite main surfaces 109 of the outermost electrically insulating layer structure 103 are the same, so the cross-sections of the covering electrically conductive layer structure 102 on one side and the opposite side of the outermost electrically insulating layer structure 103 are the same.

[0099] Specifically, the sidewalls 107 of the opening 105 are substantially perpendicular to the main surface 109 of the electrically conductive layer structure 102 and / or parallel to the axis of symmetry 108 of the opening 105. Therefore, by providing a laser beam perpendicular to the main surface 109 of the electrically conductive layer structure 102, the sidewalls 107 of the opening 105 are also perpendicular. Thus, the sidewalls 107 of each opening 105 can have a straight, non-curved extension between the two opposing main surfaces 109 of the outermost electrically insulating layer structure 103. Therefore, along the axis of symmetry 108 of the opening 105, each opening has the same circumferential cross-section.

[0100] Each opening 105 in at least one of segments 201 and 202 is filled with an electrically conductive connecting material 110, specifically for forming electrically conductive protrusions, and particularly for forming solder material balls. The electrically conductive connecting material 110 may be, in particular, copper. The volumes of the electrically conductive connecting material 110 protruding from corresponding openings 105 in one segment 201 and other segments 202 are equal to each other, or the volumes of the electrically conductive connecting material 110 protruding from corresponding openings 105 in one segment 201 and other segments 202 differ between segments 201 and 202. Specifically, because the laser beam 111 penetrates and exposes the surrounding region 115 very precisely, and because the laser beam 111 has a vertical inclination relative to the outer main surface of the outermost electrically insulating layer structure 103, a practical pattern of the opening region 114 and the surrounding region 115 can be formed. Therefore, the shape and volume of the opening 105 can be formed evenly, thereby also accurately forming the filling volume and protrusion of the solder material.

[0101] The outermost electrical insulating layer structure 103 comprises an organic material, such as a resin, and can be applied to the stack as a wet ink or a dry film layer. Alternatively, the outermost electrical insulating layer structure 103 comprises a molding material.

[0102] Figure 2A A schematic diagram of an outermost electrical insulating layer structure 103 including two opening segments 201, 202 according to an exemplary embodiment of the present invention is shown.

[0103] The outermost electrical insulation layer structure 103 shown includes two segments 201 and 202. An opening 105 is formed in segment 201 with a specific pattern, and another opening 203 is formed in the other segment 202 with a predefined pattern. The opening characteristics of the openings 105 and 203 between at least two segments 201 are different. Figure 2A In the exemplary embodiment shown, the opening 105 in segment 201 is smaller than the opening 203 formed in another segment 202. The distribution of the openings 105 in segment 201 may also be different from that of the openings 203 formed in another segment 202 (not shown).

[0104] The outermost electrical insulation layer structure 103 completely covers the electrical conductive layer structure 102 (except for the openings). The outermost electrical insulation layer structure 103 is divided into two sections 201 and 202. The opening 105 and another opening 203 have different sizes. The sections 201 and 202 are arranged spaced apart from each other, such that a surface section of the electrical insulation layer structure without openings is provided between the sections 201 and the other section 202. Therefore, by using different sections 201 and 202 with openings 105 of different sizes, multiple different exposed conductive sections 106 located below the electrical conductive layer structure 102 can be provided for different applications. For example, in the first section 201, which has multiple small-diameter and high-density openings 105, highly complex components with multiple signal connection points to the component carrier 100 can be arranged. The other section 202 has only a few openings 203, but these openings 203 have large diameters and low density, which can connect and / or couple components requiring higher heat transfer or high current to the component carrier 100.

[0105] The opening 105 in segment 201 has a first volume, while each of the other openings 203 in the other segment 202 has a second volume, wherein the volume of the opening 105 in segment 201 and the other volumes of the other openings 203 in the other segments are different from each other. Since the laser beam 111 forming the openings 105 and 203 has the same inclination (particularly perpendicular to the main surface 109 of the electrically conductive layer structure 102), the volumes of the openings 105 and 203 can be formed with high precision, thus achieving low manufacturing tolerances. Therefore, as... Figure 1 As shown, the shape and extent of extension of the sidewalls 107 of the corresponding opening 105 and the other opening 203 can be the same, although their diameters can differ from each other. In another embodiment, the first volume and the second volume can be the same.

[0106] Each of the additional openings 203 in the additional segment 202 is filled with additional electrically conductive connecting material 110 to specifically form electrically conductive protrusions, particularly solder material balls. Specifically, the volume of the electrically conductive connecting material 110 protruding from the corresponding opening 105 in segment 201 and the volume of the additional electrically conductive connecting material 110 protruding from the corresponding additional opening 203 in the additional segment 202 are different from each other. In another embodiment, the volume of the electrically conductive connecting material 110 protruding from the corresponding opening 105 in segment 201 and the additional volume of the additional electrically conductive connecting material 110 protruding from the corresponding additional opening 203 in the additional segment 202 may be the same.

[0107] Figure 2BA schematic diagram of an outermost electrical insulating layer structure 103 including multiple opening segments 201, 202 according to an exemplary embodiment of the present invention is shown.

[0108] In the illustrated embodiment, a central segment 201 is formed, which includes a plurality of openings 105 having smaller diameters. Within the central segment 201, a plurality of additional segments 202, 202', 202"', 202"' are formed, each of which includes corresponding openings 203, 203', 203"', 203"'. In each of the segments 201, 202, 202', 202"', 202"', the corresponding openings 105, 203, 203', 203"' have the same diameter. However, the corresponding openings 105, 203, 203', 203"', 203"' may have different diameters and distributions relative to each other. In the example shown, the central segment 201 includes an opening with a smaller diameter, while the corresponding peripheral openings 203, 203', 203" and 203"' of the other segments 202, 202', 202"' have much larger opening diameters. Since the laser beam 111 extends vertically relative to the main surface of the outermost electrically insulating layer structure 103, the corresponding openings 105, 203, 203', 203" and 203"' can have a symmetry (central) axis 108 perpendicular to the main surface 109 of the electrically conductive layer structure 102, and can also have straight sidewalls 107.

[0109] Figure 3 A schematic diagram of a component carrier 100 including corresponding curved and tapered openings 105 according to an exemplary embodiment of the present invention is shown. In one example, a side wall 107 of the shown opening 105 is slightly tapered, wherein the inner diameter D1 of the opening closest to the main surface 109 of the electrically conductive layer structure 102 is smaller than the relative outer diameter D2 of the opening 105 at the outermost main surface of the outermost electrically insulating layer structure 103. Specifically, the corresponding shape of the tapered opening 105 can be formed because the laser beam tolerance of the corresponding straight laser beam 111 has a tilt angle range of 89.5 to 90.5 relative to the outer main surface of the outermost electrically insulating layer structure 103. Therefore, by using the scattered laser beam 111, the range of tilt angles is very small, such that there are only small differences w1, w2 between the diameters D1 and D2, and the tilt angles x of the two side walls 107 are almost similar. Thus, on the one hand, the tapering is minimized, and on the other hand, almost symmetrical (mirror image) side walls 107 are formed.

[0110] Furthermore, for example, by adjusting the intensity of the laser beam 111, it is possible to generate Figure 3The curved sidewall 107 is shown on the left side of the exemplary embodiment. Therefore, the bottom surface of the opening is enlarged, resulting in a better mechanical connection between the filling medium 110 and the electrically conductive layer structure 102.

[0111] Figure 4 A schematic diagram of a component carrier 100 according to an exemplary embodiment of the present invention is shown. The component carrier 100 includes corresponding openings 105 having linear extensions and transition portions 401 in the outermost electrical insulation layer structure 103.

[0112] The lateral wall 107 of the opening 105 is integrated with the outer main surface 402 of the outermost electrically insulating layer structure 103 via a corresponding transition portion 401. The outer main surface 402 is defined as a surface opposite to the main surface 109 facing the electrically conductive layer structure 102. The transition portion 401 forms a portion that separates the lateral wall 107 of the opening 105 from the outer main surface 402. Thus, the transition portion 401 can specifically define the surface area and smooth transition between the straight main segment of the lateral wall 107 of the opening 105 and the corresponding outer main surface 402 having a planar shape, the lateral wall 107 of the opening 105 being parallel to the vertical axis of symmetry 108. The transition portions 401 of the plurality of openings 105 have the same shape, the same degree of extension, and / or the same size as each other. Specifically, since the laser beam forming the surrounding region 115 of the opening 105 has the same tilt angle, all openings 105, and in particular their transition portions 401, have the same shape and degree of extension. Specifically, the transition portion 401 includes rounded edges.

[0113] However, due to the corresponding adjustments made to the laser beam 111 that forms openings 105 and 203 in the corresponding sections 201 and 202, the shape of the transition portion 401 of the opening 105 in one section 201 may be different from the shape of the transition portion 401 of the opening 203 in the other section 202.

[0114] The transition portion 401 extends through the outermost electrical insulation layer structure 103, and the thickness through which it extends is less than half the thickness of the outermost electrical insulation layer structure 103. The transition portion 401 of the corresponding opening 105 does not extend to the central portion of the corresponding lateral wall 107 in the corresponding opening 105. Therefore, the central portion of the lateral wall 107 of the opening 105 can be straight, and only the corresponding transition portion 401 can have, for example, a rounded edge.

[0115] Furthermore, the thickness of the outermost electrical insulating layer structure 103 in section 201 differs from the thickness of the outermost electrical insulating layer structure 103 in section 202. Therefore, since the laser beam 111 can have a vertical tilt relative to the outer main surface 402 of the outermost electrical insulating layer structure 103, the thickness of the outermost electrical insulating layer structure 103 does not affect the penetration angle of the laser beam 111. Thus, the thickness of the outermost electrical insulating layer structure 103 can vary, and the opening 105 can have the same opening shape and size in both the thinner and thicker regions of the outermost electrical insulating layer structure 103.

[0116] Figure 5 An image of a component carrier 100 is shown, which has an opening 105 in the outermost electrical insulation layer structure 103, the opening 105 having a lateral wall 107, the lateral wall 107 having a... Figure 4 The schematic diagram shows a straight extension similar to the opening 105. The side wall 107 of the opening 105 is integrated with the outer main surface 402 of the outermost electrical insulating layer structure 103 via a corresponding transition portion 401. The transition portion 401 forms the portion that separates the side wall 107 of the opening 105 from the outer main surface 402. The transition portion 401 has rounded edges.

[0117] Figure 6 An image of a component carrier 100 is shown, which has an opening 105 in the outermost electrical insulation layer structure 103, the opening 105 having a lateral wall 107, the lateral wall 107 having a... Figure 3 The opening 105 shown in the diagram is a curved extension similar to the one shown in the diagram.

[0118] It should be noted that the term "comprising" does not exclude other elements or steps, and "a" or "an" does not exclude multiple. Furthermore, elements described in relation to different embodiments may be combined.

[0119] It should also be noted that the reference numerals in the claims should not be interpreted as limiting the scope of the claims.

[0120] The embodiments of the present invention are not limited to the preferred embodiments shown in the figures and described above. Rather, various variations using the illustrated solutions and the principles of the invention are possible, even in fundamentally different embodiments.

[0121] List of reference numerals in the attached diagram:

[0122] 100 component carriers

[0123] 101 stacked components

[0124] 102 Electrically Conductive Layer Structure

[0125] 103 Outermost Electrical Insulation Layer Structure

[0126] 104 Other electrical insulation layer structures

[0127] 105 opening

[0128] 106 Conduction Section

[0129] 107 Lateral Wall

[0130] 108 axes of symmetry

[0131] 109 main surface

[0132] 110 Electrically Conductive Connecting Material

[0133] 111 laser beam

[0134] 112 Scattering Device

[0135] 113 reflector

[0136] 114 opening area

[0137] 115 surrounding area

[0138] Section 201

[0139] 202 Other sections

[0140] 203 Another opening

[0141] 401 Transition Section

[0142] 402 External main surface

[0143] D1 internal diameter

[0144] D2 outer diameter

[0145] Difference in diameter between w1 and w2

[0146] 700 standard component carrier

[0147] 701 stacked components

[0148] 702 Electrically Conductive Layer Structure

[0149] 703 outermost electrical insulation layer structure

[0150] 704 Other electrical insulation layer structure

[0151] 705 standard opening

[0152] 706 Conducting Section

[0153] 707 Lateral Wall

[0154] 711 conventional laser beam.

Claims

1. A component carrier (100), the component carrier (100) comprising: The stack (101) includes at least one electrically conductive layer structure (102) and multiple electrically insulating layer structures. The outermost electrical insulating layer structure (103) of the plurality of electrical insulating layer structures includes segments (201, 202) having a plurality of openings (105), the segments (201, 202) corresponding to a plurality of planar positions at the outermost electrical insulating layer structure (103). Each opening (105) exposes a conductive portion (106) associated with at least one of the electrically conductive layer structures (102). Each opening (105) has a side wall (107) that defines the circumferential portion of the corresponding opening (105). The circumferential portion of each opening (105) has an axis of symmetry (108) perpendicular to the main surface (109) of the electrically conductive layer structure (102).

2. The component carrier (100) according to claim 1, in, The side walls (107) of the opening (105) have the same shape and the same degree of extension.

3. The component carrier (100) according to claim 1 or 2, in, The sidewall (107) of at least one of the openings (105) has a uniform shape and degree of extension.

4. The component carrier (100) according to any one of claims 1 to 3, in, The side wall (107) of at least one of the openings (105) forms a cylindrical shape.

5. The component carrier (100) according to any one of claims 1 to 4, in, The side wall (107) of at least one of the openings (105) is substantially perpendicular to the main surface (109) of the electrically conductive layer structure (102) and / or parallel to the axis of symmetry (108) of the opening (105).

6. The component carrier (100) according to claim 4 or 5, in, The axis of symmetry (108) of the at least one opening (105) forming the cylinder has an inclination tolerance of 10 to 20 degrees relative to the main surface (109) of the electrically conductive layer structure (102).

7. The component carrier (100) according to any one of claims 1 to 6, in, The side wall (107) of the opening (105) is integrated with the outer main surface of the outermost electrical insulation layer structure (103) through a corresponding transition portion. Specifically, the transition portions of the plurality of openings (105) have the same shape, the same degree of extension, and / or the same size as each other, and / or, The transition portion includes rounded corner edges, and / or, The transition portion has a different shape relative to the side wall (107) of the corresponding opening (105), and / or The transition portion extends through the outermost electrical insulation layer structure (103) and the thickness of the extension is less than half the thickness of the outermost electrical insulation layer structure (103).

8. The component carrier (100) according to any one of claims 1 to 7, in, The plurality of openings (105) have substantially the same planar extension relative to each other, and in particular, the plurality of openings (105) have the same diameter relative to each other. Specifically, the difference in planar extension of the openings (105) in the segment (201) is less than 0.1%, and the difference in diameter of the openings (105) in the segment (201) is less than 0.1%.

9. The component carrier (100) according to any one of claims 1 to 8, in, The segment includes a segment (201) and another segment (202), the segment (201) and the other segment (202) having a plurality of openings (105) and a plurality of other openings (203), the plurality of openings (105) and the plurality of other openings (203) exposing conductive portions (106) associated with at least one of the electrically conductive layer structures (102). Specifically, the opening (105) and the other opening (203) have different dimensions, and more specifically, the opening (105) and the other opening (203) have different diameters. In particular, the shape and extent of extension of the sidewalls (107) of the corresponding opening (105) and the other opening (203) are the same.

10. The component carrier (100) according to any one of claims 1 to 9, in, At least one of the segments (201, 202) has each of the openings (105, 203) filled with an electrically conductive connecting material (110). Specifically, each of the openings (105, 203) in at least one of the segments (201, 202) is filled with the electrically conductive connecting material (110) to form an electrically conductive protrusion. Furthermore, each of the openings (105, 203) in at least one of the segments (201, 202) is filled with the electrically conductive connecting material (110) to form a solder ball. In particular, the volumes of the electrically conductive connecting materials (110) protruding from the respective openings (105, 203) are equal.

11. The component carrier (100) according to any one of claims 1 to 10, in, The outermost electrical insulation layer structure (103) is a solder resist layer. Specifically, the solder resist layer is a solder resist ink or a dry film layer.

12. A method for manufacturing a component carrier (100), the method comprising: A stack (101) comprising at least one electrically conductive layer structure (102) and multiple electrically insulating layer structures is provided. Multiple openings (105) are formed in segments (201, 202) of the outermost electrical insulating layer structure (103) of the plurality of electrical insulating layer structures, the segments (201, 202) corresponding to multiple planar positions at the outermost electrical insulating layer structure (103). in, Each opening (105) exposes a conductive portion (106) associated with at least one of the electrically conductive layer structures (102). Each opening (105) has a side wall (107) that defines the circumferential portion of the corresponding opening (105). The circumferential portion of each opening (105) has an axis of symmetry (108) perpendicular to the main surface (109) of the electrically conductive layer structure (102).

13. The method according to claim 12, in, The step of forming a plurality of said openings (105) includes: At least one laser beam (111) is radiated into the area surrounding the opening region (114), causing the surrounding region (114) to harden, and The opening (105) is formed by removing the material of the outermost electrical insulating layer structure (103) at the opening region (114); in particular, the opening (105) is formed by removing the material of the outermost electrical insulating layer structure (103) at the opening region (105) by a wet chemical process.

14. The method according to claim 13, in, The step of providing at least one of the laser beams includes: The laser beam is scattered by the scattering device (112). The scattering device (112) is configured to split the laser beam to provide multiple scattered laser beams. Each scattered laser beam (111) is formed by being reflected at the incident point on the reflecting portion of the scattering device (112). The incident point in the scattering device (112) is located at a different position relative to the focal point on the outermost electrical insulating layer structure (103). The scattered laser beam (111) penetrates different focal points on the outermost electrically insulating layer structure (103) of the stack (101), thereby hardening the surrounding area (114) of the plurality of openings (105) and causing the circumferential portion of each opening (105) to have an axis of symmetry (108) perpendicular to the main surface (109) of the electrically conductive layer structure (102).

15. The method according to claim 14, in, The incident point and the focal point define the tilt angle between the laser beam (111) generated by the scattering device (112) and the outer main surface of the outermost electrical insulating layer structure (103), the tilt angle being in the range of 89.5 degrees to 90.5 degrees, and in particular, the tilt angle being 90 degrees.

16. The method according to claim 14 or 15, in, The scattering device (112) includes a plurality of mirrors (113) for generating a scattered laser beam (111). Each scattered laser beam (111) is reflected at one of the incident points on the reflector (113).

17. The method according to claim 16, in, The scattering device (112) is configured to adjust the incident point to different positions relative to the planar extension of the outermost electrical insulating layer structure (103), specifically by moving and adjusting the reflector (113) to adjust the incident point to different positions relative to the planar extension of the outermost electrical insulating layer structure (103).

18. The method according to claim 16 or 17, in, The scattering device (112) generates 100 to 250 scattered laser beams (111) per square millimeter, thereby creating a corresponding number of incident points above the outermost electrically insulating layer structure (103).

19. The method according to any one of claims 12 to 18, in, The opening (105) is formed such that the side walls (107) of the opening (105) have the same shape and the same degree of extension.

20. The method according to any one of claims 12 to 19, in, The opening (105) is formed such that the side wall (107) of the opening (105) is integrated with the outer main surface of the outermost electrical insulating layer structure (103) through a corresponding transition portion. Specifically, the openings (105) are formed such that the transition portions of the plurality of openings (105) have the same shape, the same degree of extension, and / or the same size as each other, and / or Wherein, the opening (105) is formed such that the transition portion includes a rounded corner edge, and / or Wherein, the opening (105) is formed such that the transition portion has a different shape relative to the side wall (107) of the corresponding opening (105), and / or The transition portion is formed to extend through the outermost electrical insulation layer structure (103) and the thickness of the extension is less than half the thickness of the outermost electrical insulation layer structure (103).

21. The method according to any one of claims 12 to 20, the method further comprising: Each opening (105, 203) in at least one of the segments (201, 202) is filled with an electrically conductive connecting material (110); specifically, each opening (105, 203) in at least one of the segments (201, 202) is filled with an electrically conductive connecting material (110) to form an electrically conductive protrusion; specifically, each opening (105, 203) in at least one of the segments (201, 202) is filled with an electrically conductive connecting material (110) to form a solder material ball.

22. The component carrier (100) according to any one of claims 12 to 21, in, The segment is formed to include additional segments (202), each of which has a plurality of openings (105) and a plurality of additional openings (203), the plurality of openings (105) and the plurality of additional openings (203) exposing conductive portions (106) associated with at least one of the electrically conductive layer structures (102). In this additional section (202), each of the additional openings (203) is filled with an additional electrically conductive connecting material (110). Specifically, each of the additional openings (203) in the additional section (202) is filled with an additional electrically conductive connecting material (110) to form an electrically conductive protrusion. Furthermore, each of the additional openings (203) in the additional section (202) is filled with an additional electrically conductive connecting material (110) to form a solder ball. The volume of the electrically conductive connecting material (110) protruding from the corresponding opening (105) in the segment (201) is different from the volume of the other electrically conductive connecting material (110) protruding from the corresponding other opening (203) in the other segment (202).

23. The method according to any one of claims 12 to 22, in, The plurality of said openings (105) are electrically connected to the component to form a component assembly.

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