A three-terminal perovskite / crystalline silicon tandem cell, an interposer lead-out structure, and a module manufacturing method

Abstract

The present application relates to the technical field of solar cells, and particularly relates to a three-terminal perovskite / crystalline silicon laminated cell unit, an intermediate electrode lead-out structure and a module manufacturing method. The cell unit comprises a perovskite top cell, a crystalline silicon bottom cell and an intermediate electrode, the intermediate electrode extends to the back of the cell through the lead-out structure, forming an independent terminal electrically isolated from the top electrode and the bottom electrode; the non-light-receiving area of the back of the cell is pre-provided with three electrode lead-out pads and a thin film temperature sensor, forming a standardized electrical interface. The manufacturing method comprises: preparing a cell sheet and pre-providing back pads and a sensor; double-channel I-V test sorting; string welding layout; laminating and packaging; after laminating, low-temperature conductive glue is used to mount an external functional module; junction box integration and module testing. The present application realizes the standardized interface of the three-terminal laminated cell and compatibility with the existing production line, solves the process contradiction between high-temperature lamination and low-temperature device mounting, and enables the 3T laminated cell to directly replace the conventional single-junction cell sheet.

Description

Technical Field

[0001] This invention relates to the field of solar cell technology, specifically to a three-terminal perovskite / crystalline silicon tandem solar cell unit, an intermediate electrode lead-out structure, and a method for manufacturing the module. Background Technology

[0002] Perovskite / crystalline silicon tandem solar cells can break through the efficiency limit of single-junction cells, among which the three-terminal (3T) structure has attracted much attention due to its advantages of high integration and low current mismatch. Existing technologies have proposed a variety of 3T tandem cell structures, such as using metal through-wound (MWT) or back contact (BC) methods to lead the middle electrode to the back of the cell, realizing three-terminal electrical functions at the laboratory level.

[0003] However, existing technologies mainly focus on structural innovation of the battery cells themselves, failing to address two key bottlenecks in the industrial application of 3T tandem batteries at the module level: First, there is a lack of standardized interfaces. Traditional single-junction solar cells only require two back terminals for standardized series connection, while 3T cells require three electrical isolation terminals. Existing technologies have not formed a unified back pad layout scheme, which makes it impossible to directly replace 3T solar cells with existing stringing equipment as a universal unit. Module manufacturers need to redesign the interconnect topology, resulting in high barriers to industrialization.

[0004] Second, the manufacturing processes are incompatible. Standard module lamination requires a high temperature of 120°C to 160°C, but if external functional modules such as microcontrollers need to be mounted on the back of the solar cells, their electronic components cannot withstand this temperature. Existing lamination and mounting solutions are only for module-level modifications of traditional single-junction modules, and do not address the specific connection requirements between the precision pads on the back of 3T cells and the intermediate electrode leads, nor do they solve the problem of the perovskite active layer being sensitive to secondary heating.

[0005] Therefore, there is an urgent need for a technical solution that enables 3T tandem solar cells to have a standardized back electrical interface and be compatible with existing high-temperature lamination production lines, so as to transform them into standardized photovoltaic units that can directly replace traditional single-junction solar cells. Summary of the Invention

[0006] The purpose of this invention is to provide a three-terminal perovskite / crystalline silicon tandem solar cell unit, an intermediate electrode lead-out structure, and a method for manufacturing the module, so as to solve the problems mentioned in the background art.

[0007] To achieve the above objectives, the present invention provides the following technical solution: a three-terminal perovskite / crystalline silicon tandem solar cell, comprising: a perovskite top cell having a top electrode; Crystalline silicon bottom cell, with a bottom electrode; An intermediate electrode is disposed between the perovskite top cell and the crystalline silicon bottom cell for collecting the same type of charge carriers from the perovskite top cell and the crystalline silicon bottom cell; The intermediate electrode extends to the back of the battery cell via a lead-out structure, forming an independent terminal that is electrically isolated from the top electrode and the bottom electrode. The back of the battery cell has three electrode lead-out pads and a thin-film temperature sensor pre-installed in the non-light-receiving area. The three electrode lead-out pads correspond to the lead-out terminals of the top electrode, the middle electrode and the bottom electrode, respectively, and are used to achieve standardized electrical connections with external functional modules or interconnects.

[0008] Preferably, the intermediate electrode is led out by metal through-wound (MWT) method, specifically: a through hole is opened at a predetermined position on the crystalline silicon bottom cell, an insulating layer is deposited on the inner wall of the through hole and then filled with conductive material, the intermediate electrode is led from the perovskite / crystalline silicon interface to the back of the cell, and connected in parallel through the back bus bar to form the independent terminal.

[0009] Preferably, the crystalline silicon bottom cell is a back contact (BC) structure crystalline silicon cell, with its anode and cathode both located on the back of the cell; the intermediate electrode is a transparent conductive oxide layer that forms an ohmic contact with the front of the BC crystalline silicon bottom cell, and the positive and negative electrodes of the bottom cell are independently led out from the back in an interdigitated manner.

[0010] Preferably, the lead-out method of the intermediate electrode is selected from any of the following: TCO is led out from the sidewall, and after being protected by an insulating layer in the edge area of ​​the battery, the intermediate TCO layer is extended along the sidewall to the back side. Local grooving and buried grid lead-out: The intermediate TCO layer is exposed by laser grooving at a specific location in the non-light-receiving area of ​​the battery. Electrode paste is filled in the groove and sintered to form buried grid lead-out lines. The intermediate connecting layer directly serves as the third electrode, and the intermediate electrode is led out to the external terminal at the end of the component by electric welding or conductive adhesive.

[0011] Preferably, the three electrode lead-out pads are arranged on the back of the battery as follows: a middle electrode lead-out pad is set in the central area, and a top electrode lead-out pad and a bottom electrode lead-out pad are set on both sides of the middle electrode lead-out pad respectively. The thin-film temperature sensor is set in the area below the three electrode lead-out pads, and an area for external functional module docking is reserved below the thin-film temperature sensor.

[0012] This invention also provides a method for manufacturing a three-terminal perovskite / crystalline silicon tandem solar cell, comprising the following steps: S1: Prepare a three-terminal perovskite / crystalline silicon tandem solar cell, the solar cell including a perovskite top cell, a crystalline silicon bottom cell and an intermediate electrode located between the two, and three electrode lead-out pads and a thin film temperature sensor are pre-placed in the non-light-receiving area on the back of the solar cell. S2: Perform dual-channel IV testing on the solar cells obtained in S1, record the voltage characteristic curves and temperature coefficients of the top and bottom cells under standard test conditions, and sort the solar cells according to the consistency of electrical parameters. S3: The sorted battery cells are welded into battery strings in series using interconnecting strips, and electrical connection structures are pre-installed on the backplate or encapsulation film layer before lamination. S4: Perform lamination encapsulation on the completed string soldering and layout structure at a lamination temperature of 120°C to 160°C; S5: On the inner side of the backsheet of the laminated module, corresponding to the position of each cell, the external functional module is electrically connected to the reserved solder pads on the back of the cell by means of conductive adhesive. The curing temperature of the conductive adhesive is 80℃ to 120℃. S6: Integrate the power management unit in the component junction box and establish an electrical connection with the pre-set electrical connection structure in S3; S7: Perform component-level testing, including insulation withstand voltage testing and electrical connection reliability verification.

[0013] Preferably, the preparation and extraction method of the intermediate electrode in S1 is selected from any of the following: MWT method: Laser drilling is performed at predetermined positions on the crystalline silicon bottom cell, with a hole diameter of 50-200μm. An insulating layer is deposited on the inner wall of the hole using atomic layer deposition or plasma-enhanced chemical vapor deposition, and then filled with silver paste or copper paste conductive material. BC bottom cell method: The crystalline silicon bottom cell adopts an interdigitated back contact (IBC) or tunnel oxide back contact (TBC) structure, and the intermediate electrode forms an ohmic contact with the front side of the bottom cell.

[0014] Preferably, the conductive adhesive in S5 is selected from anisotropic conductive adhesive (ACA) or isotropic conductive adhesive (ICA), and the mounting process parameters are: temperature 80-120℃, pressure 0.5-2MPa, and time 10-60 seconds.

[0015] Preferably, the external functional module in S5 is one of a cell-level microcontroller, a bypass switch, or a monitoring node. The external functional module is manufactured using a flexible PCB or an ultra-thin rigid PCB process, and the external functional module pre-stores the electrical characteristic parameters of the corresponding cell.

[0016] The present invention also provides a three-terminal perovskite / crystalline silicon tandem photovoltaic module, comprising: a plurality of three-terminal perovskite / crystalline silicon tandem solar cells connected in series, each of the solar cells being the aforementioned solar cell unit; a module-level junction box disposed on the back of the module for current collection and output; wherein, the back of each solar cell has a pre-reserved solder pad that forms an electrical connection with an external functional module after the module is laminated using a low-temperature conductive adhesive, and the series topology and electrical interface configuration of the photovoltaic module are equivalent to those of a monocrystalline silicon photovoltaic module.

[0017] Compared with the prior art, the beneficial effects of the present invention are: A standardized back-side electrical interface for three-terminal tandem solar cells is achieved. Through various lead-out schemes such as MWT through-hole, BC back contact, TCO sidewall, or partial slotted buried grid, the middle electrode is effectively led from the perovskite / crystalline silicon interface to the back of the cell. It is then integrated with the lead-out ends of the top and bottom electrodes into a standardized three-terminal pad layout. This layout enables the 3T tandem solar cell to have a back-side electrical interface equivalent to traditional single-junction solar cells. It can be directly interconnected and connected in series using existing stringing equipment, eliminating the need to redesign complex sub-string grouping topologies or dedicated welding fixtures for 3T cells. This fundamentally solves the interface bottleneck of embedding 3T cells as universal units into traditional module production lines.

[0018] It is compatible with existing high-temperature lamination processes for modules, achieving decoupling of process sequences. Inorganic or high-temperature resistant structures such as solder pads and thin-film temperature sensors on the back of the solar cells are pre-installed before lamination, capable of withstanding standard lamination temperatures of 120°C to 160°C. External functional modules are then mounted after lamination using a low-temperature conductive adhesive process at 80°C to 120°C. This process design, which involves high-temperature encapsulation followed by low-temperature connection, achieves compatibility between precision electronic devices and high-temperature encapsulation processes without altering the core manufacturing flow of existing modules (cell preparation, string bonding, lamination, and framing). This significantly reduces the barriers to industrialization and equipment investment costs.

[0019] Low-temperature mounting ensures the long-term reliability of electronic components. External functional modules are mounted using low-temperature conductive adhesive (ACA or ICA) after lamination, avoiding solder joint failure, chip drift, or secondary thermal damage to the encapsulation film caused by the 160°C high temperature experienced by electronic components during lamination. The contact resistance between the pads and the module after mounting meets the long-term electrical reliability requirements of photovoltaic modules.

[0020] Single-cell temperature monitoring supports refined thermal management. The thin-film temperature sensor (NTC thermistor) pre-installed on the back of the cell is directly fabricated on the cell body through screen printing or inkjet printing. It can provide the intrinsic temperature data of a single cell in real time. This temperature signal can be directly used for local status monitoring of external functional modules or to provide accurate thermal feedback input for module-level power management, avoiding local overheating or power loss caused by deviations in the module-level average temperature estimation. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the 3T perovskite / crystalline silicon tandem solar cell structure provided in an embodiment of the present invention; Figure 2 This is a cross-sectional view of a 3T stacked battery with an intermediate electrode brought out using MWT in an embodiment of the present invention. Figure 3 This is a cross-sectional view of a 3T stacked battery with a BC bottom battery structure in an embodiment of the present invention. Figure 4 This is a schematic diagram of the back pad layout of a battery cell provided in an embodiment of the present invention. Detailed Implementation

[0022] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Example 1:

[0023] This embodiment describes various implementation methods for a 3T stacked battery cell and its intermediate electrode.

[0024] like Figure 1 As shown, the three-terminal perovskite / crystalline silicon tandem solar cell in this embodiment consists of three parts: a perovskite top cell, an intermediate electrode, and a crystalline silicon bottom cell.

[0025] The structure of a perovskite top solar cell, from top to bottom, consists of a top electrode (a transparent conductive oxide, such as ITO) and a hole transport layer (such as NiO). X Or PTAA), perovskite light-absorbing layer (wide bandgap, Eg≈1.55-1.75 eV), electron transport layer (such as C 60 (Or SnO2), the crystalline silicon bottom cell can be a homogeneous crystalline silicon cell (such as PERC or TOPCon structure) or a heterogeneous crystalline silicon cell (such as HJT structure) or a composite passivated crystalline silicon structure, with a band gap of about 1.12 eV. The middle electrode is located between the perovskite top cell and the crystalline silicon bottom cell. The material is selected from one of the transparent conductive oxides (ITO, IZO, FTO) with a thickness of 50-200 nm.

[0026] The electrode polarity arrangement of a 3T tandem cell can be either pnnp or nppn. The middle electrode collects the same type of charge carriers from both the upper and lower cells, while the top and bottom electrodes collect different types of charge carriers, respectively.

[0027] Please see Figure 2The MWT lead-out scheme is as follows: a through-hole with a diameter of 50-200μm is opened at a predetermined position of the crystalline silicon bottom cell using laser. First, an insulating layer (such as alumina) is deposited on the inner wall of the through-hole by atomic layer deposition (ALD) or plasma-enhanced chemical vapor deposition (PECVD). Then, conductive filler material (such as silver paste or copper paste) is filled into the hole. The intermediate electrode is led from the perovskite / crystalline silicon interface to the back of the cell through the through-hole. The lead-out ends of multiple through-holes are connected in parallel on the back side by a bus bar to form an independent back terminal that is independent of the top electrode and the bottom electrode.

[0028] Please see Figure 3 The BC bottom cell scheme is as follows: the crystalline silicon bottom cell adopts an interdigitated back contact (IBC), a tunnel oxide back contact (TBC), a heterojunction back contact (HBC), or a tunnel heterojunction back contact (THBC) structure. Its anode and cathode are located on the back of the cell, and the intermediate electrode (transparent conductive oxide) directly forms an ohmic contact with the front of the BC bottom cell. The positive electrode contact and the negative electrode contact are arranged alternately in an interdigitated form on the back of the BC bottom cell, and are led out from the back as independent terminals.

[0029] TCO sidewall lead-out scheme: After the edge area of ​​the battery is protected by an insulating layer, the intermediate TCO layer is extended along the sidewall to the back side to form a continuous conductive channel from the side to the back side.

[0030] Local grooving and buried grid lead-out scheme: The intermediate TCO layer is exposed by laser grooving at a specific location in the non-light-receiving area of ​​the battery, and electrode paste is filled into the groove and sintered to form buried grid lead-out lines.

[0031] Direct lead-out solution for intermediate connection layer: The intermediate electrode is treated as an independent third electrode. Instead of perforation or sidewall extension at the individual cell level, after the module is serially bonded, the intermediate electrode leads of each cell are connected in parallel to the external terminals at the module end via laser welding or conductive adhesive bonding. This solution is suitable for large-area deposition processes with good intermediate electrode continuity, simplifies the back structure of individual cells, and concentrates the lead-out operation at the module end. Example 2:

[0032] This embodiment describes the implementation of a standardized three-terminal pad and thin-film temperature sensor layout on the back of a battery.

[0033] like Figure 4 As shown, each 3T tandem solar cell has standardized electrode lead-out pads and sensor layout pre-installed on the non-light-receiving area on its back side: The central position is the T2 pad (the middle electrode lead-out end), with safe spacing left above, below, left, and right.

[0034] The T1 pad (top electrode lead-out end) and T3 pad (bottom electrode lead-out end) are placed on the left and right sides respectively, which facilitates series soldering through interconnect strips.

[0035] A thin-film temperature sensor (NTC thermistor) is installed below the T2 pad. It is fabricated on the back of the cell using screen printing or inkjet printing processes and is used to monitor the intrinsic temperature of the cell.

[0036] The bottom is reserved for a communication bus interface area or an area for external functional modules to interface with.

[0037] This layout enables 3T stacked batteries of different batches and lead-out methods to have a unified back interface, achieving standardization and interchangeability of battery cells. Example 3:

[0038] This embodiment is an implementation method for manufacturing three-terminal tandem photovoltaic modules that is compatible with both high-temperature lamination and low-temperature mounting.

[0039] The manufacturing method of this embodiment includes the following steps: S1: Fabrication of 3T tandem solar cells. Perovskite / crystalline silicon three-terminal tandem solar cells were fabricated according to the method described in Example 1, and three electrode lead-out pads and a thin-film temperature sensor were pre-placed on the non-light-receiving area on the back of the solar cell.

[0040] S2: Dual-channel IV testing and sorting. The solar cells obtained in S1 are subjected to dual-channel IV testing. The voltage characteristic curves and temperature coefficients of the top and bottom cells are recorded under standard test conditions. The cells are sorted according to the consistency of electrical parameters, and the electrical characteristic parameters are burned into the memory of the external functional module to be mounted.

[0041] S3: String welding and layout. The sorted solar cells are welded into sub-strings in series using interconnecting strips, and communication buses or electrical connection structures are pre-installed on the backplane or encapsulation film layer.

[0042] S4: Lamination Encapsulation. High-temperature encapsulation is performed using conventional module lamination processes, with lamination temperatures ranging from 120°C to 160°C and lamination times from 8 to 15 minutes. The pads and thin-film temperature sensors on the back of the solar cells remain stable within this temperature range.

[0043] S5: Low-temperature mounting of external functional modules after lamination. On the inside of the backsheet of the laminated module, anisotropic conductive adhesive (ACA) or isotropic conductive adhesive (ICA) is used to electrically connect and mechanically fix the external functional modules to the pre-reserved pads on the back of the solar cells at 80-120℃, 0.5-2 MPa pressure, and 10-60 seconds.

[0044] S6: Junction Box Integration. A power management unit is integrated within the component's junction box and electrically connected to the pre-embedded electrical connection structure in S3.

[0045] S7: Component Testing. Perform component-level testing, including IV characteristic testing, EL imaging inspection, insulation withstand voltage testing, and electrical connection reliability verification. Example 4:

[0046] This embodiment describes the implementation of a low-temperature conductive adhesive mounting process for external functional modules after lamination.

[0047] External functional modules are manufactured using flexible PCB or ultra-thin rigid PCB processes, with a thickness not exceeding 1mm. The conductive adhesive connection between the module and the pads on the back of the solar cell has the following characteristics: ACA connection: Suitable for scenarios with small pad spacing, conduction is only in the Z-axis direction to avoid short circuits between adjacent pads; ICA connection: Suitable for scenarios with large pad spacing or requiring higher current carrying capacity, forming an omnidirectional conductive channel after curing.

[0048] After mounting, the external functional module forms an electrical path with the perovskite top cell and the crystalline silicon bottom cell through the intermediate electrode lead-out terminal, and can perform functions such as local bias adjustment, status monitoring or fault bypass, but does not change the overall series topology of the module. Example 5:

[0049] This embodiment is an implementation method for verifying the compatibility and reliability of a standardized 3T tandem battery module production line.

[0050] The 144 half-cell 3T perovskite / crystalline silicon tandem module manufactured using the method described in this embodiment has a standardized three-terminal interface on the back of its cells, allowing it to be directly connected using the same stringing and lamination equipment as traditional single-junction modules. The external functional modules, after lamination, are connected to pre-reserved pads via low-temperature conductive adhesive, with a contact resistance of less than 10 mΩ, meeting the reliability requirements for a 25-year lifespan of photovoltaic modules.

[0051] Due to the standardized layout of the back pads, 3T cells from different suppliers and with different intermediate electrode lead-out methods can be produced together on the same module production line. Module manufacturers do not need to design complex sub-string grouping topologies for 3T cells separately. The module design difficulty and production line configuration are basically the same as those of traditional single-junction modules, significantly reducing supply chain management difficulty and manufacturing costs.

[0052] It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above, and that it can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, the embodiments should be considered illustrative and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0053] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A three-terminal perovskite / crystalline silicon tandem solar cell, characterized in that, include: Perovskite top solar cell, with a top electrode; Crystalline silicon bottom cell, with a bottom electrode; An intermediate electrode is disposed between the perovskite top cell and the crystalline silicon bottom cell for collecting the same type of charge carriers from the perovskite top cell and the crystalline silicon bottom cell; The intermediate electrode extends to the back of the battery cell via a lead-out structure, forming an independent terminal that is electrically isolated from the top electrode and the bottom electrode. The back of the battery cell has three electrode lead-out pads and a thin-film temperature sensor pre-installed in the non-light-receiving area. The three electrode lead-out pads correspond to the lead-out terminals of the top electrode, the middle electrode and the bottom electrode, respectively, and are used to achieve standardized electrical connections with external functional modules or interconnects.

2. The battery cell according to claim 1, characterized in that, The intermediate electrode is led out by metal through-wound (MWT) method, specifically: a through hole is opened at a predetermined position on the crystalline silicon bottom cell, an insulating layer is deposited on the inner wall of the through hole and then filled with conductive material, the intermediate electrode is led from the perovskite / crystalline silicon interface to the back of the cell, and connected in parallel through the back bus bar to form the independent terminal.

3. The battery cell according to claim 1, characterized in that, The crystalline silicon bottom cell is a back contact (BC) structure crystalline silicon cell, with its anode and cathode both located on the back of the cell; the intermediate electrode is a transparent conductive oxide layer that forms an ohmic contact with the front of the BC crystalline silicon bottom cell, and the positive and negative electrodes of the bottom cell are independently led out from the back in an interdigitated manner.

4. The battery cell according to claim 1, characterized in that, The method of leading out the intermediate electrode is selected from any of the following: TCO is led out from the sidewall, and after being protected by an insulating layer in the edge area of ​​the battery, the intermediate TCO layer is extended along the sidewall to the back side. Local grooving and buried grid lead-out: The intermediate TCO layer is exposed by laser grooving at a specific location in the non-light-receiving area of ​​the battery. Electrode paste is filled in the groove and sintered to form buried grid lead-out lines. The intermediate connecting layer directly serves as the third electrode, and the intermediate electrode is led out to the external terminal at the end of the component by electric welding or conductive adhesive.

5. The battery cell according to claim 1, characterized in that, The three electrode lead-out pads are arranged on the back of the battery as follows: a middle electrode lead-out pad is set in the central area, and a top electrode lead-out pad and a bottom electrode lead-out pad are set on both sides of the middle electrode lead-out pad respectively. The thin film temperature sensor is set in the area below the three electrode lead-out pads, and an area for external functional module docking is reserved below the thin film temperature sensor.

6. A method for manufacturing a three-terminal perovskite / crystalline silicon tandem solar cell, characterized in that, Includes the following steps: S1: Prepare a three-terminal perovskite / crystalline silicon tandem solar cell, the solar cell including a perovskite top cell, a crystalline silicon bottom cell and an intermediate electrode located between the two, and three electrode lead-out pads and a thin film temperature sensor are pre-placed in the non-light-receiving area on the back of the solar cell. S2: Perform dual-channel IV testing on the solar cells obtained in S1, record the voltage characteristic curves and temperature coefficients of the top and bottom cells under standard test conditions, and sort the solar cells according to the consistency of electrical parameters. S3: The sorted battery cells are welded into battery strings in series using interconnecting strips, and electrical connection structures are pre-installed on the backplate or encapsulation film layer before lamination. S4: Perform lamination encapsulation on the completed string soldering and layout structure at a lamination temperature of 120°C to 160°C; S5: On the inner side of the backsheet of the laminated module, corresponding to the position of each cell, the external functional module is electrically connected to the reserved solder pads on the back of the cell by conductive adhesive. The curing temperature of the conductive adhesive is 80℃ to 120℃. S6: Integrate the power management unit in the component junction box and establish an electrical connection with the pre-set electrical connection structure in S3; S7: Perform component-level testing, including insulation withstand voltage testing and electrical connection reliability verification.

7. The manufacturing method according to claim 6, characterized in that, The preparation and extraction method of the intermediate electrode described in S1 is selected from any of the following: MWT method: Laser drilling is performed at predetermined positions on the crystalline silicon bottom cell, with a hole diameter of 50-200μm. An insulating layer is deposited on the inner wall of the hole using atomic layer deposition or plasma-enhanced chemical vapor deposition, and then filled with silver paste or copper paste conductive material. BC bottom cell method: The crystalline silicon bottom cell adopts an interdigitated back contact (IBC), tunnel oxide back contact (TBC), heterojunction back contact (HBC), or tunnel heterojunction back contact (THBC) structure, and the intermediate electrode forms an ohmic contact with the front side of the bottom cell.

8. The manufacturing method according to claim 6, characterized in that, The conductive adhesive mentioned in S5 is selected from anisotropic conductive adhesive (ACA) or isotropic conductive adhesive (ICA), and the mounting process parameters are: temperature 80-120℃, pressure 0.5-2MPa, and time 10-60 seconds.

9. The manufacturing method according to claim 6, characterized in that, The external functional module mentioned in S5 is one of a cell-level microcontroller, a bypass switch, or a monitoring node. The external functional module adopts a flexible PCB or ultra-thin rigid PCB manufacturing process, and the external functional module pre-stores the electrical characteristic parameters of the corresponding cell.

10. A three-terminal perovskite / crystalline silicon tandem photovoltaic module, characterized in that, include: Multiple three-terminal perovskite / crystalline silicon tandem solar cells connected in series, each of the solar cells being a cell unit according to any one of claims 1 to 5; A module-level junction box is located on the back of the module and is used for current collection and output. Each of the solar cells has a pre-reserved solder pad on the back, which is electrically connected to an external functional module after the module is laminated using low-temperature conductive adhesive. The series topology and electrical interface configuration of the photovoltaic module are equivalent to those of a monocrystalline silicon photovoltaic module.

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