Compositions, films and methods of making the same, optoelectronic devices, display devices

Abstract

The embodiment of the present application provides a kind of composition, film and its preparation method, optoelectronic device, display device.The composition includes organic P-type semiconductor material, first solvent, second solvent, the boiling point of first solvent is lower than second solvent, and the solubility of organic P-type semiconductor material in first solvent is greater than the solubility of organic P-type semiconductor material in second solvent.The composition provided by the embodiment of the present application can be used to prepare film, and the film prepared has good performance.

Description

Technical Field

[0001] This application relates to the field of optoelectronic devices, and in particular to a composition, a thin film and a method for preparing the same, an optoelectronic device, and a display device. Background Technology

[0002] Solution-based film deposition (SPD) has become one of the core candidate technologies for large-scale thin film fabrication due to its significant advantages, including high material utilization, patterned fabrication capability, compatibility with flexible substrates, and low equipment cost. The technical principle involves dissolving or dispersing functional materials in a solvent to prepare an ink, which is then precisely coated onto the substrate surface using methods such as coating or printing. Subsequent annealing and other processes then form a dense and uniform thin film. However, the performance of existing inks adapted to SPD needs further improvement. Summary of the Invention

[0003] Based on this, embodiments of this application provide a composition, a thin film and a method for preparing the same, an optoelectronic device, and a display device.

[0004] In a first aspect, embodiments of this application provide a composition comprising an organic P-type semiconductor material, a first solvent, and a second solvent, wherein the boiling point of the first solvent is lower than that of the second solvent, and the solubility of the organic P-type semiconductor material in the first solvent is greater than that of the organic P-type semiconductor material in the second solvent.

[0005] Secondly, embodiments of this application provide a method for preparing a thin film, comprising: depositing a composition to obtain a thin film, wherein the composition is the composition described above.

[0006] Thirdly, embodiments of this application provide a thin film prepared using the thin film preparation method described above.

[0007] Fourthly, embodiments of this application provide an optoelectronic device, including an anode, a hole transport functional layer, and a cathode stacked together, wherein the hole transport functional layer includes the thin film described above.

[0008] Fifthly, embodiments of this application provide a display device including the optoelectronic device described above.

[0009] The compositions provided in the embodiments of this application can be used to prepare thin films, and the resulting thin films have good properties. Attached Figure Description

[0010] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below.

[0011] Figure 1 This is a schematic diagram of the first structure of the optoelectronic device provided in the embodiments of this application.

[0012] Figure 2 This is a schematic diagram of a second structure of the optoelectronic device provided in an embodiment of this application.

[0013] Component symbol explanation: 100. Optoelectronic device; 20. Anode; 30. Hole injection layer; 40. Hole transport functional layer; 50. Light-emitting layer; 60. Electron transport layer; 70. Cathode; 80. Interface layer. Detailed Implementation

[0014] The technical solutions in the embodiments of this application are described clearly and completely below. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0015] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0016] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one," "at least one of the following," or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c," or "at least one of a, b, and c," can both mean: a, b, c, a+b, a+c, b+c, or a+b+c, where a, b, and c can be single or multiple.

[0017] In this application, another layer is formed "on" a certain layer. The term "on" is a broad concept and can mean that the formed other layer is adjacent to a certain layer, or that there are other spacer structures between the other layer and the certain layer. For example, a second electrode is formed "on" the first charge carrier functional layer. The term "on" can mean that the formed second electrode is adjacent to the first charge carrier functional layer, or that there are other spacer structures between the second electrode and the first charge carrier functional layer, such as a light-emitting layer.

[0018] "Parts by weight" is a basic unit of measurement used to express the mass ratio of multiple components. One part can represent any unit mass, such as 1g, 1kg, 2g, 2kg, etc. If we say that component A has "a" parts by weight and component B has "b" parts by weight, it means the mass ratio of component A to component B is a:b. Alternatively, it can mean that the mass of component A is aK and the mass of component B is bK (where K is any number representing a multiplier). It is important to understand that, unlike parts by weight, the sum of the parts by weight of all components is not limited to 100 parts.

[0019] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the range referred to.

[0020] This application provides a composition comprising an organic p-type semiconductor material, a first solvent, and a second solvent, wherein the boiling point of the first solvent is lower than that of the second solvent, and the solubility of the organic p-type semiconductor material in the first solvent is greater than that in the second solvent.

[0021] The compositions provided in the embodiments of this application can be used to prepare thin films, and the resulting thin films have good properties.

[0022] It should be noted that the composition provided in the embodiments of this application can be used to prepare the hole transport functional layer of an optoelectronic device. The composition is deposited on the hole injection layer by inkjet printing to form the hole transport functional layer.

[0023] It should be noted that by controlling the boiling point of the first solvent to be lower than that of the second solvent, the organic P-type semiconductor material has a higher solubility in the first solvent and a lower solubility in the second solvent. This is beneficial for controlling the evaporation rate of the solvent and the precipitation rate of the solute (organic P-type semiconductor material) during the film deposition process, thereby obtaining a film with a more uniform thickness.

[0024] For example, the volume ratio of the first solvent to the second solvent is (60-90): (10-40), such as 90:10, 80:20, 70:30, 60:40, etc.

[0025] For example, the difference between the boiling point of the second solvent and the boiling point of the first solvent is 50°C to 100°C, such as 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, etc.

[0026] For example, the solubility of the organic P-type semiconductor material in the first solvent is 20 mg / ml to 100 mg / ml, and the solubility of the organic P-type semiconductor material in the second solvent is 5 mg / ml to 10 mg / ml.

[0027] For example, the first solvent includes at least one of an aromatic hydrocarbon and a first benzoic acid alkyl ester.

[0028] For example, the aromatic hydrocarbon has a boiling point of 200°C to 280°C. Optionally, the aromatic hydrocarbon includes at least one of cyclohexylbenzene, hexylbenzene, n-heptylbenzene, pentanylbenzene, and 1-methylnaphthalene.

[0029] For example, the boiling point of the first alkyl benzoate is 180°C to 250°C. Optionally, the first alkyl benzoate includes at least one of methyl benzoate, ethyl benzoate, propyl benzoate, and ethyl p-methylbenzoate.

[0030] For example, the second solvent includes at least one of an aromatic benzoate and an alkyl benzoate, wherein the boiling point of the first alkyl benzoate is lower than that of the second alkyl benzoate.

[0031] For example, the benzoic acid aromatic ester has a boiling point of 260°C to 340°C. Optionally, the benzoic acid aromatic ester is selected from at least one of benzyl benzoate and phenethyl benzoate.

[0032] For example, the boiling point of the second alkyl benzoate is 280℃~330℃, and the number of carbon atoms in the alkane group (R) corresponding to the alkoxy group (-OR) constituting its ester group is 3-8, such as 3, 4, 5, 6, 7, 8, etc. It should be noted that by controlling the number of carbon atoms in the alkyl benzoate to 3-8, it is beneficial to reduce its solubility in the hole injection host material and reduce the contact angle of the alkyl benzoate on the hole injection layer, which is beneficial to improve the spreadability of the composition during film formation, thereby improving the uniformity of the film thickness of the obtained film.

[0033] Optionally, the second alkyl benzoate is selected from at least one of amyl benzoate, isoamyl benzoate, n-hexyl benzoate, and 2-ethylhexyl benzoate.

[0034] In some embodiments, the second solvent comprises a mixture of the aromatic benzoate and the alkyl benzoate, wherein the volume ratio of the aromatic benzoate to the alkyl benzoate is (1-5):(1-5), for example 1:1, 1:2, 1:3, 1:4, 1:5, 2:1, 3:1, 4:1, 5:1, etc.

[0035] It should be noted that the reasons for designing the second solvent to include aromatic benzoic acid esters and alkane benzoic acid esters are as follows: (1) Aromatic benzoic acid esters have a certain dissolving effect on the hole injection host material in the hole injection layer. The solubility is about 1 mg / ml-5 mg / ml. It can dissolve a small part of the hole injection host material, so that an interface layer of 1 nm~5 nm is formed between the hole injection layer and the hole transport functional layer (the material of the interface layer includes organic P-type semiconductor material, P-type metal oxide and hole injection host material), which is conducive to the transport of holes between the hole injection layer and the hole transport functional layer and improves the device efficiency. (2) The second alkyl benzoate has extremely low or no solubility for the hole injection host material in the hole injection layer. Furthermore, the second alkyl benzoate has a small contact angle on the hole injection layer, which is beneficial to the spreadability of the composition during film formation, thereby improving the uniformity of the film thickness of the prepared film (hole transport functional layer).

[0036] For example, the composition further includes a p-type metal oxide, the p-type metal oxide having a greater solubility in the first solvent than the p-type metal oxide having a greater solubility in the second solvent.

[0037] For example, the solubility of the p-type metal oxide in the first solvent is 50 mg / ml to 100 mg / ml, and the solubility of the p-type metal oxide in the second solvent is 1 mg / ml to 5 mg / ml.

[0038] It should be noted that currently, the hole injection layer (HIL) of optoelectronic devices typically uses P-type doped materials to improve the hole injection efficiency of the hole injection layer. However, during the deposition of the composition to prepare the hole transport functional layer, the P-type doped material in the hole injection layer is very easy to diffuse upwards and into the hole transport functional layer, resulting in a decrease in the efficiency of the optoelectronic device.

[0039] This application adds a P-type metal oxide to the composition. Since the P-type metal oxide has high solubility in the first solvent and low solubility in the second solvent, when the composition is inkjet printed, the P-type metal oxide settles earlier than the organic P-type semiconductor material in the later stage of the composition's volatilization, and finally accumulates at the bottom of the hole transport functional layer. The P-type metal oxide can adsorb the P-type doped material that diffuses upward from the hole injection layer, avoiding the decrease in the efficiency of the optoelectronic device caused by the diffusion of the P-type doped material into the hole transport functional layer.

[0040] Specifically, the P-type doped material in the hole injection layer usually contains halogens. Halogens readily undergo complexation reactions with P-type metal oxides to form metal-halogen complexes, thereby preventing the P-type doped material from diffusing upwards.

[0041] For example, the metal element in the P-type metal oxide is selected from at least one of Group IIA, Group IIIA, Group IIB, Group IVA, and Group IVB elements.

[0042] For example, the mass ratio of the organic P-type semiconductor material to the P-type metal oxide is (10-100):1, such as 10:1, 20:1, 30:1, 40:1, 50:1, 60:1, 70:1, 80:1, 90:1, 100:1, etc.

[0043] For example, the Dv50 particle size of the P-type metal oxide is 5nm~20nm, such as 5nm, 8nm, 10nm, 12nm, 15nm, 18nm, 20nm, etc. Specifically, the Dv50 particle size of the P-type metal oxide is tested according to the national standard GBT / 29022-2021.

[0044] For example, the conductivity of the p-type metal oxide is 1×10⁻⁶. -8 S / m ~ 1×10 -6 S / m, while the conductivity of N-type metal oxides is typically 1×10⁻⁶. -4 S / m ~ 1×10 -2 S / m.

[0045] For example, the Group IIA elements include Mg (magnesium), the Group IIIA elements include Al (aluminum), the Group IIB elements include Zn (zinc), the Group IVA elements include Sn (tin), and the Group IVB elements include Ti (titanium).

[0046] For example, the P-type metal oxide includes at least one of P-type titanium oxide (P-TiO2), P-type zinc oxide (P-ZnO), P-type zinc titanium oxide (P-TiZnO2), P-type magnesium zinc oxide (P-ZnMgO), P-type tin oxide (P-SnO2), and P-type zinc aluminum oxide (P-ZnAlO2).

[0047] For example, the P-type titanium oxide, the P-type zinc oxide, the P-type zinc titanium oxide, the P-type magnesium zinc oxide, the P-type tin oxide, and the P-type zinc aluminum oxide all contain metal vacancy defects, thereby exhibiting P-type material characteristics.

[0048] For example, the concentration of the organic P-type semiconductor material is 2 mg / ml to 50 mg / ml, such as 2 mg / ml, 5 mg / ml, 10 mg / ml, 20 mg / ml, 30 mg / ml, 40 mg / ml, 50 mg / ml, etc.

[0049] Exemplarily, the organic P-type semiconductor material includes N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine, N,N'-di-1-naphthyl-N,N'-diphenylbenzidine, 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane, N,N'-bis(4-methylphenyl)-N,N'-bis(4-ethylphenyl)-[1,1'-(3,3'-dimethyl)biphenyl]4,4'-diamine, polyvinylcarbazole, poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine), poly(9-vinylcarbazole), 9,9'-(1,3-phenyl)di-9H-carbazole, 4,4',4''-tris(carbazole-9-yl)triphenylamine, 4,4'- Cyclohexylbis[N,N-di(4-methylphenyl)aniline], N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-di(naphthyl-2-yl)-N,N'-di(phenyl)biphenyl-4,4'-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobis[9H-fluorene]-2,7-diamine, N2,N7-DI-1-naphthyl-N2,N7,9,9-tetraphenyl-9H-fluorene-2,7-diamine, 9,9-di(2-ethylhexyl)-N,N'-di-1-naphthyl-N,N'-diphenyl-9H-fluorene-2,7-diamine, N4,N4'-di(4-vinylphenyl)-N4, N4'-di-1-naphthylbiphenyl-4,4'-diamine, 3,6-bis(9-phenyl-9H-carbazol-3-yl)-9-phenyl-9H-carbazole, 9,1-dihydro-9,9-dimethyl-1-(9-phenyl-9H-carbazol-3-yl)-idine, N-biphenyl-4-yl-9,9-dimethyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9H-fluorene-2-amine, 9,9-dimethyl-N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9H-fluorene-2,7-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-di Phenyl-9,9-spirodifluorene-2,7-diamine, N,N,N',N'-tetra(2-naphthyl)-1,1'-biphenyl-4,4'-diamine, 2,2',7,7'-tetra(diphenylamino)-9,9'-spirobifluorene, N,N'-bis(9,9-dimethyl-9H-fluorene-2-yl)-N,N'-diphenylbenzidine, N,N,N',N'-tetraphenylbenzidine, 4,4'-(diphenylmethylene)bis(N,N-diphenylaniline), 9,9-bis[4-[bis(bis(biphenyl-4-yl)amino]phenyl]fluorene, tris(4-biphenyl)amine, 4,4'-(diphenylsilanediyl)bis(N,N-diphenylaniline), 4,4'-(9H-fluorene-9-alkylene)bis[N,At least one of N-bis(4-methylphenyl)-benzylamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine, poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine), 4,4'-bis(9-carbazole)biphenyl, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, and N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine.

[0050] This application also provides a method for preparing a composition, comprising: mixing raw material components to obtain the composition, wherein the raw material components include an organic P-type semiconductor material, a first solvent, and a second solvent, wherein the boiling point of the first solvent is lower than that of the second solvent, and the solubility of the organic P-type semiconductor material in the first solvent is greater than that in the second solvent.

[0051] For example, the raw material components are mixed at a temperature of 25°C to 60°C. This temperature range of 25°C to 60°C facilitates rapid dissolution and mixing of the materials while maintaining their stability.

[0052] This application also provides a method for preparing a thin film, comprising: depositing a composition to obtain a thin film, wherein the composition is the composition described above.

[0053] For example, after depositing the composition, the method for preparing the thin film further includes: annealing at a temperature of 200°C to 260°C (e.g., 200°C, 220°C, 240°C, 260°C, etc.) and an annealing time of 10 minutes to 50 minutes (e.g., 10 minutes, 20 minutes, 30 minutes, 40 minutes, 50 minutes, etc.).

[0054] This application also provides a thin film prepared by the thin film preparation method described above.

[0055] For example, the thin film comprises an organic P-type semiconductor material and a P-type metal oxide, wherein the mass ratio of the organic P-type semiconductor material to the P-type metal oxide is (10-100):1, such as 10:1, 20:1, 30:1, 40:1, 50:1, 60:1, 70:1, 80:1, 90:1, 100:1, etc.

[0056] Please see Figure 1 This application also provides an optoelectronic device 100, including an anode 20, a hole transport functional layer 40 and a cathode 70 stacked together, wherein the hole transport functional layer 40 includes the thin film described above.

[0057] Exemplarily, the optoelectronic device 100 further includes a hole injection layer 30, which is disposed between the hole transport functional layer 40 and the anode 20. The hole injection layer 30 includes a hole injection host material, which includes poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethane, and 2,3,6,7,10,11-hexacyano-1,4,5,8, 9,12-Hexaazabenzanphenanthrene, polyester copper carbonate, free phthalocyanine, copper phthalocyanine, platinum phthalocyanine, titanium phthalocyanine, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzanphenanthrene, 7,7,8,8-tetracyano-p-benzoquinone dimethyl ether, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-di-1-naphthyl-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(4'-(N,N-di(1-naphthyl)-amino)-4-biphenyl)-benzidine N,N′-di(phenyl)-N,N′-di(4′-(N,N-di(phenylamino)-4-biphenyl)benzidine, N,N'-diphenyl-N,N'-di-[4-(N,N-di-p-tolylamino)phenyl]benzidine, N4,N4,N4',N4'-tetra(4-methoxyphenyl)-[1,1'-biphenyl]-4,4'-diamine, 4,4',4''-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4'4"-tris(N,N-diphenylamino)triphenylamine, At least one of N2,N2'-(9,9-dimethyl-9H-fluorene-2,7-diyl)bis(9,9-dimethyl-N2,N7,N7-triphenyl-9H-fluorene-2,7-diamine) and 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone; the transition metal oxide is selected from at least one of NiO, MoO3, WO3, CuO, and Cu2O; the transition metal chalcogenide is selected from at least one of MoS2, MoSe2, WS3, WSe3, and CuS.

[0058] For example, the hole injection layer 30 further includes a P-type dopant material, wherein the mass ratio of the P-type dopant material to the hole injection host material is (1-20):100, such as 1:100, 5:100, 10:100, 15:100, 20:100, etc.; the P-type dopant material includes at least one of diphenyliodonium salts such as 4-isopropyl-4'-methyldiphenyliodide tetra(pentafluorophenyl)borate, 4-methyl-4'-isopropyldiphenyliodonium hexafluorophosphate, diphenyliodonium trifluoromethanesulfonate, and diphenyliodonium trifluoromethanesulfonate. It is understood that by doping the hole injection layer 30 with a P-type dopant material, the hole injection efficiency of the hole injection layer 30 can be improved, thereby improving the efficiency of the optoelectronic device 100.

[0059] Please see Figure 2 In some embodiments, an interface layer 80 is formed between the hole injection layer 30 and the hole transport functional layer 40. The interface layer 80 includes an organic p-type semiconductor material, a p-type metal oxide, a hole injection host material, a p-type dopant material, and a complex formed by the reaction of the p-type metal oxide and the p-type dopant material. The average thickness of the interface layer 80 is 1 nm to 5 nm, for example, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, etc. Specifically, the average thickness of the interface layer 80 is tested according to the national standard GB / T36969-2018.

[0060] It should be noted that when an interface layer 80 is formed between the hole injection layer 30 and the hole transport functional layer 40, it is beneficial for holes to be transported between the hole injection layer 30 and the hole transport functional layer 40, thereby improving device efficiency.

[0061] Exemplarily, the optoelectronic device 100 further includes a light-emitting layer 50, which is disposed between the hole transport functional layer 40 and the cathode 70. The material of the light-emitting layer 50 includes an organic light-emitting material. Optionally, the organic light-emitting material includes at least one of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine-C2,N)iridium(III) (CBP:Ir(mppy)3), 4,4',4''-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine-C2,N)iridium(TCTX:Ir(mmpy)), diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials and DBP fluorescent materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives.

[0062] Exemplarily, the optoelectronic device 100 further includes an electron transport layer 60 disposed between the light-emitting layer 50 and the cathode 70. The material of the electron transport layer 60 is selected from at least one of organic electron transport materials, doped or undoped metal oxide nanoparticle materials, nitrides, group IIB-VIA semiconductor materials, group IIIA-VA semiconductor materials, and group IB-IIIA-VIA semiconductor materials. The organic electron transport material is selected from TPBi (1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene) and TmPyPB (1,3,5-tris[(3-pyridyl)-phenyl-3-yl]). The undoped metal oxide particles contain at least one of the following: benzene, BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen (4,7-diphenyl-1,10-phenanthroline), SPPO13 (poly[1,3-bis(4-phenyl-1,2,3-triazol-5-yl)benzene]), and Liq (lithium 8-hydroxyquinoline). The undoped metal oxide particles are made of at least one of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and HfO3. The doped metal oxide particles contain at least one of the following: ZnO, TiO2, SnO2, ZrO2, and T2O5. At least one of a2O5, HfO3, and Al2O3, wherein the doping element in the doped metal oxide particles includes at least one of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Cd, and Cs, wherein the nitride includes Si3N4, wherein the IIB-VIA group semiconductor material includes at least one of ZnS, ZnSe, and CdS, wherein the IIIA-VA group semiconductor material includes at least one of InP and GaP, and wherein the IB-IIIA-VIA group semiconductor material includes at least one of CuInS and CuGaS.

[0063] Exemplarily, the cathode 70 and the anode 20 each independently include at least one of a metal electrode, a carbon material electrode, and a metal oxide electrode. The material of the metal electrode includes at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg. The material of the carbon material electrode includes at least one of graphite, carbon nanotubes, graphene, and carbon fibers. The metal oxide electrode includes a metal oxide electrode or a composite electrode in which a metal is disposed between doped or undoped transparent metal oxides. The material of the metal oxide electrode includes at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO. The composite electrode includes at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

[0064] For example, the average thickness of the hole injection layer 30 is 10nm~40nm, such as 10nm, 20nm, 30nm, 40nm, etc.

[0065] For example, the average thickness of the hole transport functional layer 40 is 10nm~50nm, such as 10nm, 20nm, 30nm, 40nm, 50nm, etc.

[0066] For example, the average thickness of the light-emitting layer 50 is 10nm to 50nm, such as 10nm, 20nm, 30nm, 40nm, 50nm, etc.

[0067] For example, the average thickness of the anode 20 is 40nm~120nm, such as 40nm, 60nm, 80nm, 100nm, 120nm, etc.

[0068] For example, the average thickness of the cathode 70 is 40nm~120nm, such as 40nm, 60nm, 80nm, 100nm, 120nm, etc.

[0069] This application also provides a display device, including the optoelectronic device described above.

[0070] For example, the display device can be a terminal such as a television, mobile phone, tablet computer, monitor, or advertising display screen, or it can be a device with a display screen such as a game device, augmented reality (AR) device, virtual reality (VR) device, data storage device, audio playback device, video playback device, or wearable device. Wearable devices can be smart bracelets, smart glasses, smartwatches, smart decorations, etc.

[0071] The present application will be specifically described below through specific embodiments. The following embodiments are only some embodiments of the present application and are not intended to limit the present application.

[0072] Composition Example 1 A composition, the preparation method of which includes: An organic P-type semiconductor material (N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine), a first solvent (cyclohexylbenzene), and a second solvent were mixed and stirred to obtain a composition; wherein, the second solvent included benzyl benzoate (aromatic benzoate) and 2-ethylhexyl benzoate (alkane benzoate) in a volume ratio of 1:1, the volume ratio of the first solvent to the second solvent was 8:2, and the concentration of the organic P-type semiconductor material was 25 mg / ml.

[0073] Composition Example 2 A composition, the preparation method of which differs from that of composition Example 1, in that: The first solvent is ethyl p-methylbenzoate.

[0074] Composition Example 3 A composition, the preparation method of which differs from that of composition Example 1, in that: The second solvent consists of phenethyl benzoate (aromatic benzoate) and isoamyl benzoate (alkane benzoate) in a volume ratio of 1:1.

[0075] Composition Example 4 A composition, the preparation method of which differs from that of composition Example 1, in that: The second solvent consists of benzyl benzoate (aromatic benzoate) and 2-ethylhexyl benzoate (alkyl benzoate) in a volume ratio of 1:5.

[0076] Composition Example 5 A composition, the preparation method of which differs from that of composition Example 1, in that: The second solvent comprises benzyl benzoate (aromatic benzoate) and 2-ethylhexyl benzoate (alkyl benzoate) in a volume ratio of 5:1.

[0077] Composition Example 6 A composition, the preparation method of which differs from that of composition Example 1, in that: The volume ratio of the first solvent to the second solvent is 9:1.

[0078] Composition Example 7 A composition, the preparation method of which differs from that of composition Example 1, in that: The volume ratio of the first solvent to the second solvent is 6:4.

[0079] Composition Example 8 A composition, the preparation method of which differs from that of composition Example 1, in that: An organic p-type semiconductor material (N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine), a p-type metal oxide (P-ZnO nanoparticles), cyclohexylbenzene (first solvent), and a second solvent were mixed and stirred to obtain a composition; wherein the mass ratio of the organic p-type semiconductor material to the p-type metal oxide was 50:1, and the Dv50 particle size of the p-type metal oxide (P-ZnO nanoparticles) was 5 nm.

[0080] It can be seen that the difference between Composition Example 8 and Composition Example 1 is that the composition prepared in Composition Example 6 also includes P-type metal oxide (P-ZnO nanoparticles).

[0081] Composition Example 9 A composition, the preparation method of which differs from that of composition example 8 in that: The mass ratio of organic P-type semiconductor material to P-type metal oxide is 100:1.

[0082] Composition Example 10 A composition, the preparation method of which differs from that of composition example 8 in that: The mass ratio of organic P-type semiconductor material to P-type metal oxide is 10:1.

[0083] Composition Example 11 A composition, the preparation method of which differs from that of composition example 8 in that: The p-type metal oxide is P-TiO2 nanoparticles with a concentration of 2.5 mg / ml and a Dv50 particle size of 5 nm.

[0084] Comparative Example 1 A composition, the preparation method of which includes: An organic P-type semiconductor material (N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine) and a first solvent (cyclohexylbenzene) were mixed and stirred to dissolve the mixture, thereby obtaining a composition; wherein the concentration of the organic P-type semiconductor material was 25 mg / ml.

[0085] It can be seen that the difference between Comparative Example 1 and Example 1 is that the composition prepared in Comparative Example 1 does not include a second solvent.

[0086] Thin Film Example 1 A thin film, the preparation method of which includes: The composition was deposited by inkjet printing and annealed (baked in N2 at 230°C for 30 min) to obtain a thin film with a thickness of 30 nm. The composition was the same as that prepared in Composition Example 1.

[0087] Thin Film Example 2 A thin film, the preparation method of which differs from that of Thin Film Example 1, in that: The composition used for inkjet printing is the composition prepared in Composition Example 2.

[0088] Thin Film Example 3 A thin film, the preparation method of which differs from that of Thin Film Example 1, in that: The composition used for inkjet printing is the composition prepared in Composition Example 3.

[0089] Thin Film Example 4 A thin film, the preparation method of which differs from that of Thin Film Example 1, in that: The composition used for inkjet printing is the composition prepared in Composition Example 4.

[0090] Thin Film Example 5 A thin film, the preparation method of which differs from that of Thin Film Example 1, in that: The composition used for inkjet printing is the composition prepared in Composition Example 5.

[0091] Thin Film Example 6 A thin film, the preparation method of which differs from that of Thin Film Example 1, in that: The composition used for inkjet printing is the composition prepared in Composition Example 6.

[0092] Thin Film Example 7 A thin film, the preparation method of which differs from that of Thin Film Example 1, in that: The composition used for inkjet printing is the composition prepared in Composition Example 7.

[0093] Thin Film Example 8 A thin film, the preparation method of which differs from that of Thin Film Example 1, in that: The composition used for inkjet printing is the composition prepared in Composition Example 8.

[0094] Thin Film Example 9 A thin film, the preparation method of which differs from that of Thin Film Example 1, in that: The composition used for inkjet printing is the composition prepared in Composition Example 9.

[0095] Thin Film Example 10 A thin film, the preparation method of which differs from that of Thin Film Example 1, in that: The composition used for inkjet printing is the composition prepared in Composition Example 10.

[0096] Thin Film Example 11 A thin film, the preparation method of which differs from that of Thin Film Example 1, in that: The composition used for inkjet printing is the composition prepared in Composition Example 11.

[0097] Thin Film Comparative Example 1 A thin film, the preparation method of which differs from that of Thin Film Example 1, in that: The composition used for inkjet printing is the composition prepared in Comparative Example 1.

[0098] Device Example 1 A photoelectric device, the method for fabricating which includes: Step S1: The cleaned anode (ITO) is treated with UVO (ultraviolet ozone) for 15 minutes, and a mixture of poly(3,4-ethylenedioxythiophene) and 4-isopropyl-4'-methyldiphenyliodide tetra(pentafluorophenyl)borate is deposited on the anode, wherein the mass ratio of poly(3,4-ethylenedioxythiophene) and 4-isopropyl-4'-methyldiphenyliodide tetra(pentafluorophenyl)borate is 100:1. The anode is then baked in N2 at 230℃ for 30 minutes to obtain a hole injection layer with an average thickness of 25 nm. Step S2: A hole transport functional layer is formed on the hole injection layer using the method of thin film Example 1. The average thickness of the hole transport functional layer is 30 nm. Step S3: Deposit organic light-emitting material (CBP:Ir(mppy)3) on the hole functional layer, bake in N2 at 120℃ for 20 minutes to obtain the light-emitting layer with an average thickness of 30nm; Step S4: Deposit LIQ on the light-emitting layer to obtain an electron transport layer with an average thickness of 30 nm. Step S5: Deposit Ag on the electron transport layer to obtain a cathode with an average thickness of 100 nm, thus obtaining an optoelectronic device.

[0099] Device Example 2 A photoelectric device, the fabrication method of which differs from that of device embodiment 1, in that: Step S2: A hole transport functional layer is formed on the hole injection layer using the method of thin film Example 2. The average thickness of the hole transport functional layer is 30 nm.

[0100] Device Example 3 A photoelectric device, the fabrication method of which differs from that of device embodiment 1, in that: Step S2: A hole transport functional layer is formed on the hole injection layer using the method of thin film embodiment 3, and the average thickness of the hole transport functional layer is 30 nm.

[0101] Device Example 4 A photoelectric device, the fabrication method of which differs from that of device embodiment 1, in that: Step S2: A hole transport functional layer is formed on the hole injection layer using the method of thin film example 4. The average thickness of the hole transport functional layer is 30 nm.

[0102] Device Example 5 A photoelectric device, the fabrication method of which differs from that of device embodiment 1, in that: Step S2: A hole transport functional layer is formed on the hole injection layer using the method of thin film example 5. The average thickness of the hole transport functional layer is 30 nm.

[0103] Device Example 6 A photoelectric device, the fabrication method of which differs from that of device embodiment 1, in that: Step S2: A hole transport functional layer is formed on the hole injection layer using the method of thin film Example 6. The average thickness of the hole transport functional layer is 30 nm.

[0104] Device Example 7 A photoelectric device, the fabrication method of which differs from that of device embodiment 1, in that: Step S2: A hole transport functional layer is formed on the hole injection layer using the method of thin film example 7. The average thickness of the hole transport functional layer is 30 nm.

[0105] Device Example 8 A photoelectric device, the fabrication method of which differs from that of device embodiment 1, in that: Step S2: A hole transport functional layer is formed on the hole injection layer using the method of thin film Example 8. The average thickness of the hole transport functional layer is 30 nm.

[0106] Device Example 9 A photoelectric device, the fabrication method of which differs from that of device embodiment 1, in that: Step S2: A hole transport functional layer is formed on the hole injection layer using the method of thin film Example 9. The average thickness of the hole transport functional layer is 30 nm.

[0107] Device Example 10 A photoelectric device, the fabrication method of which differs from that of device embodiment 1, in that: Step S2: A hole transport functional layer is formed on the hole injection layer using the method of thin film example 10. The average thickness of the hole transport functional layer is 30 nm.

[0108] Device Example 11 A photoelectric device, the fabrication method of which differs from that of device embodiment 1, in that: Step S2: A hole transport functional layer is formed on the hole injection layer using the method of thin film Example 11. The average thickness of the hole transport functional layer is 30 nm.

[0109] Device Comparison Example 1 A photoelectric device, the fabrication method of which differs from that of device embodiment 1, in that: Step S2: A hole transport functional layer is formed on the hole injection layer using the method of thin film comparative example 1. The average thickness of the hole transport functional layer is 30 nm.

[0110] Thin film performance testing: The performance of the films prepared in the thin film examples and comparative examples was tested. The test indicators and test methods are as follows: Surface roughness (RMS): The surface roughness (RMS) of the thin film was measured using a Bruker-icon atomic force microscope.

[0111] The test results are shown in Table 1.

[0112] Table 1

[0113] As can be seen from Table 1: The surface roughness (RMS) of the films prepared in Thin Film Examples 1-11 is less than that of the film prepared in Comparative Example 1, indicating that the films prepared in Thin Film Examples 1-11 of this application have better film thickness uniformity.

[0114] Device performance testing: The performance of the optoelectronic devices fabricated in the device embodiment and the device comparative example was tested. The test indicators and test methods are as follows: Current efficiency (CE): Using the FSD optical characteristic measurement equipment, an efficiency testing system was built by controlling the QE PRO spectrometer, Keithley 2400, and Keithley 6485 through LabVIEW. Parameters such as voltage, current, brightness, and emission spectrum were measured, and parameters such as current efficiency (CE) and device BI (CE / CIEy) were calculated.

[0115] Device BI: The ratio of current efficiency (CE) to color coordinates (CIEy).

[0116] Device T95-1knit lifespan (hours): refers to the lifespan of a device when its brightness decays to 95% from an initial brightness of 1000 nits.

[0117] The test results are shown in Table 2.

[0118] Table 2

[0119] As can be seen from Table 2: The current efficiency (CE), device BI (CE / CIEy), and lifetime (T95@1000nit) of the optoelectronic devices prepared in Device Examples 1-11 are all greater than those of the optoelectronic devices prepared in Device Comparative Example 1. This indicates that the devices prepared in Device Examples 1-11 of this application have higher luminous efficiency and longer lifetime.

[0120] The compositions, thin films, their preparation methods, optoelectronic devices, and display devices provided in the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application, and the descriptions of the embodiments above are only for the purpose of helping to understand this application. Furthermore, those skilled in the art will recognize that, based on the ideas of this application, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A composition, characterized in that, The mixture includes an organic p-type semiconductor material, a first solvent, and a second solvent. The boiling point of the first solvent is lower than that of the second solvent, and the solubility of the organic p-type semiconductor material in the first solvent is greater than that in the second solvent.

2. The composition according to claim 1, characterized in that, The volume ratio of the first solvent to the second solvent is (60-90): (10-40); and / or, The difference between the boiling point of the second solvent and the boiling point of the first solvent is 50℃~100℃; and / or, The organic P-type semiconductor material has a solubility of 20 mg / ml to 100 mg / ml in the first solvent and a solubility of 5 mg / ml to 10 mg / ml in the second solvent.

3. The composition according to claim 2, characterized in that, The first solvent includes at least one of aromatic hydrocarbons and alkyl benzoates; The second solvent includes at least one of aromatic benzoic acid ester and alkane benzoic acid ester; The boiling point of the first alkyl benzoate is lower than that of the second alkyl benzoate.

4. The composition according to claim 3, characterized in that, The aromatic hydrocarbon has a boiling point of 200℃~280℃, and optionally, the aromatic hydrocarbon includes at least one selected from cyclohexylbenzene, hexylbenzene, n-heptylbenzene, pentanylbenzene, and 1-methylnaphthalene; and / or, The first alkyl benzoate has a boiling point of 180°C to 250°C. Optionally, the first alkyl benzoate includes at least one of methyl benzoate, ethyl benzoate, propyl benzoate, and ethyl p-methylbenzoate; and / or, The aromatic benzoic acid ester has a boiling point of 260℃~340℃. Optionally, the aromatic benzoic acid ester is selected from at least one of benzyl benzoate and phenethyl benzoate; and / or, The second alkyl benzoate has a boiling point of 280℃~330℃, and the alkoxy group constituting its ester group has 3-8 carbon atoms in the alkane group; optionally, the second alkyl benzoate is selected from at least one of amyl benzoate, isoamyl benzoate, n-hexyl benzoate, and 2-ethylhexyl benzoate; and / or, The second solvent comprises a mixture of the aromatic benzoate and the alkane benzoate, wherein the volume ratio of the aromatic benzoate to the alkane benzoate is (1-5):(1-5).

5. The composition according to claim 1, characterized in that, The composition further includes a p-type metal oxide, the p-type metal oxide having a higher solubility in the first solvent than the p-type metal oxide having a higher solubility in the second solvent.

6. The composition according to claim 5, characterized in that, The solubility of the p-type metal oxide in the first solvent is 50 mg / ml to 100 mg / ml, and the solubility of the p-type metal oxide in the second solvent is 1 mg / ml to 5 mg / ml; and / or, The metal element in the p-type metal oxide is selected from at least one element from Group IIA, Group IIIA, Group IIB, Group IVA, and Group IVB; and / or, The mass ratio of the organic p-type semiconductor material to the p-type metal oxide is (10-100):1; and / or, The Dv50 particle size of the p-type metal oxide is 5 nm to 20 nm; and / or, The conductivity of the p-type metal oxide is 1×10⁻⁶. -8 S / m ~ 1×10 -6 S / m.

7. The composition according to claim 6, characterized in that, The Group IIA elements include Mg, the Group IIIA elements include Al, the Group IIB elements include Zn, the Group IVA elements include Sn, and the Group IVB elements include Ti; and / or, The P-type metal oxide includes at least one of P-type titanium oxide, P-type zinc oxide, P-type zinc titanium oxide, P-type magnesium zinc oxide, P-type tin oxide, and P-type zinc aluminum oxide.

8. The composition according to any one of claims 1-7, characterized in that, The concentration of the organic p-type semiconductor material is 2 mg / ml to 50 mg / ml; and / or, The organic P-type semiconductor material includes N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine, N,N'-di-1-naphthyl-N,N'-diphenylbenzidine, 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane, N,N'-bis(4-methylphenyl)-N,N'-bis(4-ethylphenyl)-[1,1'-(3,3'-dimethyl)biphenyl]4,4'-diamine, polyvinylcarbazole, poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine), poly(9-vinylcarbazole), 9,9'-(1,3-phenyl)di-9H-carbazole, 4,4',4''-tris(carbazole-9-yl)triphenylamine, 4,4'-cyclohexyldi[N,N- [Di(4-methylphenyl)aniline], N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-di(naphthyl-2-yl)-N,N'-di(phenyl)biphenyl-4,4'-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobis[9H-fluorene]-2,7-diamine, N2,N7-DI-1-naphthyl-N2,N7,9,9-tetraphenyl-9H-fluorene-2,7-diamine, 9,9-di(2-ethylhexyl)-N,N'-di-1-naphthyl-N,N'-diphenyl-9H-fluorene-2,7-diamine, N4,N4'-di(4-vinylphenyl)-N4,N4'-di-1-naphthylbiphenyl- 4,4'-Diamine, 3,6-bis(9-phenyl-9H-carbazol-3-yl)-9-phenyl-9H-carbazole, 9,1-dihydro-9,9-dimethyl-1-(9-phenyl-9H-carbazol-3-yl)-idine, N-biphenyl-4-yl-9,9-dimethyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9H-fluorene-2-amine, 9,9-dimethyl-N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9H-fluorene-2,7-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-diamine Amines, N,N,N',N'-tetra(2-naphthyl)-1,1'-biphenyl-4,4'-diamine, 2,2',7,7'-tetra(diphenylamino)-9,9'-spirobisfluorene, N,N'-bis(9,9-dimethyl-9H-fluoren-2-yl)-N,N'-diphenylbenzidine, N,N,N',N'-tetraphenylbenzidine, 4,4'-(diphenylmethylene)bis(N,N-diphenylaniline), 9,9-bis[4-[bis(bisphenyl-4-yl)amino]phenyl]fluorene, tris(4-biphenyl)amine, 4,4'-(diphenylsilanediyl)bis(N,N-diphenylaniline), 4,4'-(9H-fluoren-9-alkylene)bis[N,N-bis(4-methylphenyl)-benzylamine, poly(N,N-diphenyl)-bis(bi ...At least one of N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine, poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine), 4,4'-bis(9-carbazole)biphenyl, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, and N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine.

9. A method for preparing a thin film, characterized in that, include: A deposition composition is used to obtain a thin film, wherein the composition is the composition according to any one of claims 1-8.

10. The method for preparing the thin film according to claim 9, characterized in that, After depositing the composition, the method for preparing the thin film further includes annealing at a temperature of 200°C to 260°C for a time of 10 to 50 minutes.

11. A thin film, characterized in that, The thin film was prepared by the method described in any one of claims 9-10.

12. An optoelectronic device, characterized in that, It includes an anode, a hole transport functional layer, and a cathode stacked together, wherein the hole transport functional layer includes the thin film as described in claim 11.

13. The optoelectronic device according to claim 12, characterized in that, The optoelectronic device further includes a hole injection layer disposed between the hole transport functional layer and the anode. The hole injection layer comprises a hole injection host material, including poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethylethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, and poly… Copper carbonate ester, free phthalocyanine, copper phthalocyanine, platinum phthalocyanine, titanium phthalocyanine, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, 7,7,8,8-tetracyano-p-benzodiquinone dimethyl ether, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-di-1-naphthyl-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(4'-(N,N-di(1-naphthyl)-amino)-4-biphenyl)-benzidine, N,N'-di(benzyl)-bis(phenyl ... N,N′-di(4′-(N,N-di(phenylamino)-4-biphenyl)benzidine, N,N'-diphenyl-N,N'-di-[4-(N,N-di-p-tolylamino)phenyl]benzidine, N4,N4,N4',N4'-tetra(4-methoxyphenyl)-[1,1'-biphenyl]-4,4'-diamine, 4,4',4''-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4'4"-tris(N,N-diphenylamino)triphenylamine, N2,N At least one of 2'-(9,9-dimethyl-9H-fluorene-2,7-diyl)bis(9,9-dimethyl-N2,N7,N7-triphenyl-9H-fluorene-2,7-diamine) and 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone; the transition metal oxide is selected from at least one of NiO, MoO3, WO3, CuO, and Cu2O; the transition metal chalcogenide is selected from at least one of MoS2, MoSe2, WS3, WSe3, and CuS.

14. The optoelectronic device according to claim 13, characterized in that, The hole injection layer further includes a P-type doped material, wherein the mass ratio of the P-type doped material to the hole injection host material is (1-20):100; the P-type doped material includes at least one of the following diphenyliodonium salts: 4-isopropyl-4'-methyldiphenyliodide tetra(pentafluorophenyl)borate, 4-methyl-4'-isopropyldiphenyliodonium hexafluorophosphate, diphenyliodonium trifluoromethanesulfonate, and diphenyliodonium trifluoromethanesulfonate; and / or, An interface layer is formed between the hole injection layer and the hole transport functional layer. The interface layer includes an organic P-type semiconductor material, a P-type metal oxide, a hole injection host material, a P-type dopant material, and a complex formed by the reaction of the P-type metal oxide and the P-type dopant material. The average thickness of the interface layer is 1 nm to 5 nm.

15. The optoelectronic device according to any one of claims 12-14, characterized in that, The optoelectronic device further includes a light-emitting layer disposed between the hole transport functional layer and the cathode. The material of the light-emitting layer includes organic light-emitting materials. Optionally, the organic light-emitting material includes at least one of the following: 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine-C2,N)iridium(III) (CBP:Ir(mppy)3), 4,4',4''-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine-C2,N)iridium(TCTX:Ir(mmpy)), diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials and DBP fluorescent materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives. The optoelectronic device further includes an electron transport layer disposed between the light-emitting layer and the cathode. The material of the electron transport layer is selected from at least one of organic electron transport materials, doped or undoped metal oxide nanoparticles, nitrides, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The organic electron transport material is selected from at least one of TPBi, TmPyPB, BCP, Bphen, SPPO13, and Liq. The undoped metal oxide nanoparticles include at least one of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and HfO3. The metal oxide in the doped metal oxide particles includes at least one of ZnO, TiO2, SnO2, ZrO2, Ta2O5, HfO3, and Al2O3; the doping element in the doped metal oxide particles includes at least one of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Cd, and Cs; the nitride includes Si3N4; the IIB-VIA group semiconductor material includes at least one of ZnS, ZnSe, and CdS; the IIIA-VA group semiconductor material includes at least one of InP and GaP; and the IB-IIIA-VIA group semiconductor material includes at least one of CuInS and CuGaS. The cathode and the anode each independently include at least one of a metal electrode, a carbon material electrode, and a metal oxide electrode. The metal electrode is made of at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg. The carbon material electrode is made of at least one of graphite, carbon nanotubes, graphene, and carbon fiber. The metal oxide electrode is a composite electrode consisting of a metal oxide electrode or a doped or undoped transparent metal oxide with a metal disposed between them. The metal oxide electrode is made of at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO. The composite electrode is made of at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

16. A display device, characterized in that, Includes the optoelectronic device according to any one of claims 12-15.

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