Perovskite battery assembly and method of repairing the same

Abstract

The present disclosure provides a perovskite battery assembly and a repairing method thereof, and belongs to the technical field of photovoltaic cells. The repairing method of the perovskite battery assembly comprises the following steps: detecting a defect area of a perovskite light absorption layer; removing a part of a film layer corresponding to the defect area and retaining a first electrode to form a groove; and forming a black filling layer in the groove.

Description

Technical Field

[0001] This disclosure belongs to the field of photovoltaic cell technology, specifically relating to a perovskite cell module and its repair method. Background Technology

[0002] Perovskite solar cell modules have become a research hotspot in the photovoltaic field in recent years due to their advantages such as simple structure, high photoelectric conversion efficiency, low material and manufacturing costs, and solution processing capabilities. Perovskite materials are characterized by tunable composition; the band gap width can be adjusted by changing the constituent elements, thereby optimizing the absorption of the solar spectrum. Various methods for perovskite preparation, such as solution coating, solution spraying, and vapor deposition, provide diversity and flexibility for the manufacturing of perovskite solar cell modules.

[0003] However, perovskite solar cell modules still face many challenges in their industrialization process, with insufficient stability being one of the biggest pain points. Perovskite materials are quite sensitive to water, oxygen, and high-temperature environments. In addition, issues such as yield control in large-area fabrication also restrict the large-scale mass production of perovskite solar cell modules. Summary of the Invention

[0004] This disclosure aims to at least solve one of the technical problems existing in the prior art, and provides a perovskite battery module and a method for repairing the same.

[0005] In a first aspect, embodiments of this disclosure provide a method for repairing a perovskite solar cell module, the perovskite solar cell module comprising: a first electrode, a first carrier transport layer, a perovskite light absorption layer, a second carrier transport layer, and a second electrode, sequentially stacked; the method for repairing the perovskite solar cell module includes:

[0006] Detect the defect region of the perovskite light-absorbing layer;

[0007] The portion of the film corresponding to the defect area is removed, while the first electrode is retained to form a groove;

[0008] A black filling layer is formed within the groove.

[0009] In some embodiments, when the perovskite solar cell assembly has formed the second electrode, the process of forming a black filler layer in the groove further includes:

[0010] A conductive layer is formed on the side of the black filler layer opposite to the first electrode.

[0011] In some embodiments, forming a conductive layer on the side of the black filler layer opposite to the first electrode includes:

[0012] A conductive layer is formed by laser chemical vapor deposition; the material of the conductive layer is metal powder.

[0013] In some embodiments, detecting defect regions in the perovskite light-absorbing layer includes:

[0014] The short-circuit region between the first electrode and the second electrode in the defect area is detected using a photoluminescence detection device.

[0015] In some embodiments, removing a portion of the film layer corresponding to the defect region includes:

[0016] The second electrode, the second carrier transport layer, the perovskite light absorption layer, and the first carrier transport layer are removed using a laser.

[0017] In some embodiments, the surface of the black filler layer opposite to the first electrode is flush with the surface of the second carrier transport layer opposite to the first electrode.

[0018] In some embodiments, when the perovskite solar cell assembly does not form the second carrier transport layer and the second electrode, the process of forming a black filler layer in the groove further includes:

[0019] The second carrier transport layer and the second electrode are sequentially formed on the side of the black filler layer opposite to the first electrode.

[0020] In some embodiments, detecting defect regions in the perovskite light-absorbing layer includes:

[0021] The pinhole region in the defect area is detected using an automated optical inspection device.

[0022] In some embodiments, removing a portion of the film layer corresponding to the defect region includes:

[0023] The perovskite light-absorbing layer and the first carrier transport layer are removed using a laser.

[0024] In some embodiments, the surface of the black filler layer facing away from the first electrode is flush with the surface of the perovskite light-absorbing layer facing away from the first electrode.

[0025] In some embodiments, forming a black filler layer within the groove includes:

[0026] Black photoresist is injected into the groove using a nano-pinhole injection method, and then cured to form the black filling layer.

[0027] In a second aspect, this disclosure provides a perovskite solar cell module, which includes: a first electrode, a first carrier transport layer, a perovskite light absorption layer, a second carrier transport layer, and a second electrode stacked sequentially.

[0028] The perovskite light-absorbing layer has a defect region, and a groove is formed in the defect region that penetrates the perovskite light-absorbing layer; the groove also penetrates the first carrier transport layer and exposes the first electrode; the perovskite solar cell assembly further includes: a black filler layer;

[0029] The black filler layer fills the groove.

[0030] In some embodiments, the groove further extends through the second carrier transport layer and the second electrode; the perovskite solar cell assembly further includes: a conductive layer;

[0031] The conductive layer is located on the side of the black filler layer opposite to the first electrode.

[0032] In some embodiments, the conductive layer is made of metal powder.

[0033] In some embodiments, the surface of the black filler layer opposite to the first electrode is flush with the surface of the second carrier transport layer opposite to the first electrode.

[0034] In some embodiments, the second carrier transport layer is located on the side of the black filler layer opposite to the first electrode.

[0035] In some embodiments, the surface of the black filler layer facing away from the first electrode is flush with the surface of the perovskite light-absorbing layer facing away from the first electrode. Attached Figure Description

[0036] Figure 1 This is a schematic diagram of an exemplary perovskite solar cell assembly.

[0037] Figure 2 This is a schematic flowchart illustrating a method for repairing a perovskite solar cell module provided in an embodiment of this disclosure.

[0038] Figure 3 A schematic flowchart illustrating another method for repairing a perovskite solar cell module provided in this embodiment of the present disclosure.

[0039] Figures 4 to 12 This is a schematic diagram of the intermediate structure during the repair process of a perovskite solar cell module.

[0040] Figure 13 This is a schematic diagram of the structure of a perovskite solar cell module provided in an embodiment of this disclosure.

[0041] Figure 14 This is a schematic diagram of another perovskite solar cell module provided in an embodiment of this disclosure. Detailed Implementation

[0042] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, more explicit, and easier to understand, the technical solutions of the embodiments of this disclosure will be clearly, completely, and in detail described below with reference to the accompanying drawings. It should be particularly noted that the embodiments described herein are merely representative embodiments of a portion of all embodiments covered by this disclosure, and not an exhaustive representation of all possible embodiments. Generally, the components, structures, modules, or steps described and shown in the accompanying drawings of this disclosure can be implemented in various different specific configurations, arrangements, combinations, or design layouts, all of which fall within the scope of the concept of this disclosure. Therefore, the following detailed description of the embodiments of this disclosure provided in the accompanying drawings is intended only to illustrate and explain certain preferred or exemplary implementations of this disclosure, and is not intended to limit the scope, meaning, or legal effect of the claimed disclosure in any way. In other words, this detailed description only represents several embodiments selected by this disclosure and should not be construed as any inappropriate reduction, limitation, or exclusion of the entire content of this disclosure or the claimed technical solutions.

[0043] Based on the embodiments described in this disclosure, all other embodiments obtained by those skilled in the art through reasonable logical reasoning, simple experimentation, or conventional means without any inventive effort, whether explicitly described herein or disclosed implicitly, should fall within the scope of protection of this disclosure. Furthermore, provided that no technical contradictions, logical conflicts, or semantic inconsistencies occur, different embodiments of this disclosure and different technical features (including but not limited to method steps, structural components, parameter conditions, etc.) within each embodiment can be arbitrarily combined, substituted, superimposed, or rearranged to form new implementation methods not directly described in writing herein but also belonging to the overall concept of this disclosure. Any such combination or derivative, as long as it does not depart from the core technical principles of this disclosure, should be considered part of this disclosure.

[0044] Unless otherwise defined, all technical and scientific terms used in this disclosure shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains (i.e., a person of ordinary skill in the art). In this disclosure, ordinal numbers such as “first,” “second,” and “third” are used only to distinguish different components, elements, regions, or layers, and do not indicate any order, quantity, importance, or hierarchical relationship. Similarly, the words “a,” “one,” “the,” “the,” and similar singular expressions, unless explicitly defined by context, do not indicate a quantitative limitation (i.e., not “only one”), but rather indicate the presence of at least one of the indicated objects. The terms “comprising,” “including,” “having,” “containing,” and any grammatical variations thereof are intended to cover a non-exclusive inclusion relationship, that is, the elements, components, steps, features, or values ​​listed after these words, and their equivalents, without excluding the existence of other elements, components, steps, features, or values ​​not expressly listed.

[0045] In this disclosure, the terms "multiple" or "several" refer to two or more quantities (including two). The term "and / or" is used to describe multiple possible combinations of relationships between related objects, indicating that three different logical relationships can exist. For example, "A and / or B" can represent: A alone, A and B simultaneously, and B alone. Similarly, the symbol " / " generally indicates an "or" choice relationship between the preceding and following related objects. For example, "A / B" is usually understood as A or B, unless the context explicitly specifies otherwise. Examples or descriptions introduced in this disclosure using words such as "exemplary," "for example," and "such as" are only used to better illustrate the technical solutions of this disclosure and should not be construed as any limitation on the scope or necessity of the solutions.

[0046] Furthermore, the various expressions used in this disclosure, such as "some embodiments," "one embodiment," "exemplary embodiment," "optional embodiment," or "preferred embodiment," all mean that a specific feature, structure, material, or characteristic described in association with that embodiment or example is included in at least one embodiment of this disclosure. The appearance of these terms in different paragraphs or positions does not necessarily refer to the same embodiment, but may also point to different implementation methods. When a feature, structure, material, or characteristic is described as "optional" or "optional," it means that the feature may or may not be present. This disclosure does not make any mandatory requirements regarding its presence or absence, and those skilled in the art can choose to use or omit it according to actual needs.

[0047] It should be noted that the scales, dimensions, shapes, and relative positions shown in the accompanying drawings and specifications of this disclosure are merely illustrative and do not constitute any limitation on the physical implementation of an actual product, method, or system. Unless otherwise expressly stated, all numerical values, ranges, and interval endpoints appearing in this disclosure should be understood to include reasonable deviations due to measurement errors, manufacturing tolerances, environmental variations, or rounding. Any range provided in this disclosure (e.g., numerical ranges, time ranges, grayscale ranges, etc.) includes the endpoint values ​​of that range as well as all intermediate values ​​and subranges between the endpoints. Any intermediate value or subrange not expressly listed in this disclosure, provided it falls within the stated range, should be considered an extension of the concept of this disclosure.

[0048] Figure 1 This is a schematic diagram of an exemplary perovskite solar cell module, as shown below. Figure 1 As shown, the perovskite solar cell module includes a first electrode 101, a first carrier transport layer 102, a perovskite light absorption layer 103, a second carrier transport layer 104, and a second electrode 105, which are stacked sequentially along the thickness direction.

[0049] The first electrode 101 serves as one electrode of the perovskite solar cell module, and the second electrode 105 serves as the other electrode. The first carrier transport layer 102 can be either a hole transport layer or an electron transport layer, and correspondingly, the second carrier transport layer 104 can be either an electron transport layer or a hole transport layer, depending on whether the perovskite solar cell module has a formal or inverted structure. The perovskite light absorption layer 103 is the core photoelectric conversion layer of the perovskite solar cell module, used to absorb sunlight and generate photogenerated carriers.

[0050] In this embodiment, the formal structure with the first electrode 101 as the anode, the first carrier transport layer 102 as the hole transport layer, the second carrier transport layer 104 as the electron transport layer, and the second electrode 105 as the cathode will be used as an example for explanation.

[0051] In actual fabrication, factors such as dust particles in the environment, particle shedding from process equipment, and agglomeration or uneven crystallization during solution coating can lead to pinholes, cracks, or other types of defects in the perovskite light-absorbing layer 103. When these defects are through-hole defects, they can cause electrical conduction (i.e., a short circuit) between the first electrode 101 and the second electrode 105, or manifest as pinhole defects on the surface of the perovskite light-absorbing layer 103 even before the second electrode 105 is formed. These defects not only reduce the photoelectric conversion efficiency and long-term stability of the perovskite solar cell module but also affect the appearance quality of the module, reducing product yield and shipment volume.

[0052] To at least solve one of the aforementioned technical problems, this disclosure provides a perovskite solar cell module and its repair method. The perovskite solar cell module and its repair method provided in this disclosure will be described in further detail below with reference to the accompanying drawings and specific embodiments.

[0053] In a first aspect, embodiments of this disclosure provide a method for repairing perovskite solar cell modules. Figure 2 This is a schematic flowchart illustrating a method for repairing a perovskite solar cell module according to an embodiment of this disclosure. Figure 3 A schematic flowchart of another method for repairing a perovskite solar cell module provided in this disclosure is shown below. Figure 2 and Figure 3 As shown, the repair method for perovskite solar cell modules includes the following steps S201 to S203. Figures 4 to 12 This is a schematic diagram of the intermediate structure during the repair process of a perovskite solar cell module. The following will combine... Figures 2 to 12 The method for perovskite solar cell modules provided in the embodiments of this disclosure will be further described in detail.

[0054] S201, detecting defect areas in the perovskite light-absorbing layer.

[0055] In step S201 above, the defect region S refers to an abnormal area in the perovskite light-absorbing layer 103 caused by foreign matter, pinholes, cracks, or other structural damage. The defect region S may have caused electrical conduction between the first electrode 101 and the second electrode 105 (e.g., Figure 4 As shown), it is also possible that a conductive path has not yet been formed but there are appearance defects such as pinholes (e.g. Figure 5 and Figure 9 (As shown). The purpose of the inspection is to accurately locate the position and extent of the area that needs to be repaired, providing an accurate process reference for subsequent removal steps.

[0056] After obtaining the location information of the defect region S through detection, the planar dimensions (such as diameter, area, etc.) and shape of the defect region S can be further determined, so as to provide a basis for setting the laser scanning path and removal range in the subsequent removal steps. The accuracy of the detection determines the accuracy of the subsequent removal steps; therefore, it is necessary to reasonably select the accuracy of the detection equipment to ensure that even minute defects can be accurately identified.

[0057] S202, remove part of the film layer corresponding to the defect area and retain the first electrode to form a groove.

[0058] In step S202 above, the portion of the film corresponding to the defect region S refers to the portion of each film layer corresponding to the planar position of the defect region S in the thickness direction. That is, taking the position of the defect region S on the surface of the perovskite light-absorbing layer 103 as a reference, at least a portion of the film layer at that position, excluding the first electrode 101, is removed to form the groove G (e.g., ...). Figure 6 and Figure 10 (As shown). The area of ​​the groove G on the horizontal plane is basically consistent with the planar area of ​​the defect area, that is, the removal area is aligned with the defect area S, thereby avoiding unnecessary damage to the normal area and reducing the loss of power generation area.

[0059] Various removal methods can be employed, such as laser removal, mechanical removal, or chemical removal. Laser removal is preferred due to its advantages, including high precision, small heat-affected zone, and strong controllability. It ensures that only the film layer corresponding to the defective region S is removed, while minimizing thermal and mechanical damage to the surrounding normal area. The basic principle of laser removal is to use a high-energy laser beam to locally heat the target area, causing the film material to rapidly vaporize or melt and be removed. By precisely controlling parameters such as the laser scanning path, laser power, pulse frequency, and scanning speed, it is possible to ensure a precise match between the shape and size of the removal area and the defective region S, while also guaranteeing precise controllability of the removal depth.

[0060] During the removal process, precise control of the laser's depth is required. Specifically, laser removal should terminate at the surface of the first electrode 101, meaning the removal process must completely remove all film layers above the first electrode 101 corresponding to the defect area S, while preserving the first electrode 101 intact. If the removal depth is insufficient, the surface of the first electrode 101 will not be exposed, preventing the formation of an effective groove G, and the remaining defective film layers may still cause conductivity between the electrodes. If the removal depth is too large, the first electrode 101 will be damaged, affecting the electrical performance of the perovskite solar cell module. Therefore, precise control of the removal depth is crucial for ensuring the repair effect. By exposing the surface of the first electrode 101 at this location, a groove G is formed with the first electrode 101 at the bottom and the cross-sections of each film layer on the sidewalls, providing space for the subsequent filling of the black filler layer (described in detail later).

[0061] During the removal process, attention should also be paid to controlling the edge quality of the removed area. Ideally, the edges of the removed area should be neat, burr-free, and crack-free to ensure a good bonding interface between the subsequent black filler layer and the sidewall of the groove G, avoiding gaps or peeling at the interface.

[0062] S203 forms a black filling layer within the groove.

[0063] In step S203 above, black filler material is filled into the groove G, so that the black filler material forms a black filler layer 106 at least at the bottom of the groove G (e.g., Figure 7 and Figure 11 (As shown). The black filler material should have good flowability during filling, allowing it to fully flow into the bottom and corners of the groove G, ensuring good interfacial contact between the black filler layer 106 and the surface of the first electrode 101, as well as the sidewalls of the groove G, avoiding residual air bubbles or voids at the interface. If air bubbles or voids exist at the interface, these air bubbles or voids may become channels for subsequent water and oxygen intrusion, affecting the long-term stability of the perovskite solar cell module.

[0064] The black filler layer 106 occupies at least a portion of the space within the groove G. Specifically, the black filler layer 106 fills the bottom region of the groove G, with its bottom contacting the surface of the first electrode 101 and its sidewalls contacting the cross-sections of each film layer on the sidewalls of the groove G. The thickness of the black filler layer 106 can be set according to actual process requirements, as long as it can effectively isolate the first electrode 101 from the conductive layer above or the subsequently fabricated second electrode 105.

[0065] The black filler layer 106, made of insulating material, fills the space between the first electrode 101 and the overlying film layer, effectively blocking electrical conduction between them and thus solving the short-circuit problem caused by defects in the perovskite light-absorbing layer 103. Furthermore, the black filler layer 106 itself is black, matching the color of the perovskite light-absorbing layer 103 (which is typically close to black), ensuring that the filled area has no significant color difference from the surrounding normal area. The defective area is invisible when viewed from the light-incident surface (i.e., the direction of light incidence), thereby improving the appearance quality of the perovskite solar cell module.

[0066] The perovskite solar cell module repair method provided in this disclosure involves detecting the defective region S of the perovskite light-absorbing layer 103, removing a portion of the film corresponding to the defective region S while retaining the first electrode 101 to form a groove G, and then forming a black filling layer 106 within the groove G. This effectively repairs the electrical conductivity between the first electrode 101 and the second electrode 105 caused by defects in the perovskite light-absorbing layer 103, restoring the photoelectric conversion efficiency and lifespan of the solar cell module. Simultaneously, the black filling layer itself is black, closely matching the color of the perovskite light-absorbing layer 103, making the repaired area invisible when viewed from the light-incident surface, significantly improving the appearance quality of the solar cell module and increasing product yield. Since the removal process completely preserves the first electrode 101, no re-fabrication is required, simplifying the repair process, reducing manufacturing costs, and avoiding potential damage to other parts of the solar cell module caused by re-fabrication of the first electrode 101. The removal range is limited to the defective region itself, avoiding the removal of surrounding normal areas, resulting in minimal loss of power generation area and achieving efficient and low-loss defect repair.

[0067] In some embodiments, such as Figure 2 As shown, when the perovskite solar cell module has formed the second electrode, the above step S203, forming a black filling layer in the groove, further includes step S204, forming a conductive layer on the side of the black filling layer opposite to the first electrode.

[0068] After the black filling layer is formed in the groove G, since the second electrode 105 has been partially removed, the electrical path in this area is cut off. Therefore, it is necessary to re-form the conductive layer 107 on the side of the black filling layer away from the first electrode 101 (e.g., Figure 8 As shown in the figure, the electrical pathway in this region is reconstructed to ensure the normal power generation function of the perovskite solar cell module.

[0069] The conductive layer 107 can be formed using various processes. Preferably, laser chemical vapor deposition (LCD) is used to deposit the conductive layer 107 on the side of the black filler layer opposite to the first electrode 101. LCD utilizes a laser beam to irradiate the substrate surface, causing the reactive gases to undergo a chemical vapor deposition reaction in the laser-irradiated area, thereby depositing the conductive layer at a specific point in the designated area. This method offers advantages such as high deposition precision, a small heat-affected zone, and the ability to deposit at specific points. It is particularly suitable for precise deposition in small repair areas, ensuring that the conductive layer 107 forms only above the black filler layer 106 without affecting the surrounding normal areas.

[0070] The conductive layer 107 can be made of metal powder, such as tungsten powder, copper powder, silver powder, or gold powder. Preferably, the conductive layer 107 is formed of tungsten powder. Tungsten powder has good conductivity and good compatibility with electrode materials commonly used in perovskite battery modules, allowing it to form good electrical contact with the surrounding retained second electrode 105. In addition, tungsten has a high melting point, good chemical stability, and thermal stability, and is not prone to diffusion or reaction during subsequent processes and long-term use, ensuring the long-term reliability of the electrical performance of the repaired area.

[0071] In some embodiments, the thickness of the conductive layer 107 is substantially the same as the thickness of the surrounding second electrode 105, ensuring that the repair area is consistent with the surrounding area in the thickness direction, which is beneficial for the smooth progress of subsequent processes such as encapsulation. In other embodiments, the thickness of the conductive layer 107 can also be adjusted according to actual needs, as long as it has good conductivity.

[0072] In some embodiments, the horizontal extent of the conductive layer 107 is substantially the same as the horizontal extent of the groove G, that is, the conductive layer 107 is formed above the black filler layer 106 and does not extend beyond the boundary of the black filler layer 106. This ensures good electrical contact between the conductive layer 107 and the surrounding second electrode 105, while avoiding unnecessary electrical contact between the conductive layer 107 and the first electrode 101.

[0073] In some embodiments, in step S201 above, detecting the defect region of the perovskite light absorption layer includes: using a photoluminescence detection device to detect the short-circuit region between the first electrode and the second electrode in the defect region.

[0074] When the second electrode 105 of the perovskite solar cell module has been formed, the defective region of the perovskite light-absorbing layer 103 typically manifests as a short circuit between the first electrode 101 and the second electrode 105. This short circuit is caused by the presence of penetrating pinholes or foreign objects in the perovskite light-absorbing layer 103, resulting in direct contact between the first electrode 101 and the second electrode 105 at that location or an electrical connection formed through a conductive path. The presence of the short circuit causes photogenerated carriers to recombine at that location instead of being effectively extracted, resulting in a decrease in the photoelectric conversion efficiency of the perovskite solar cell module.

[0075] For perovskite solar cell modules with the second electrode 105 already fabricated, photoluminescence detection equipment can be used for testing. Photoluminescence detection is a non-destructive and efficient characterization method. Its basic principle is to irradiate the perovskite light-absorbing layer 103 with excitation light of a specific wavelength, causing the perovskite material to absorb photon energy and generate a photoluminescence signal. The intensity of the photoluminescence signal is closely related to the crystal quality, defect density, and carrier recombination of the perovskite light-absorbing layer 103. When a defect exists at a certain location in the perovskite light-absorbing layer 103, causing a short circuit between the first electrode 101 and the second electrode 105, the photogenerated carriers at that location will recombine rapidly through the short circuit path instead of radiative recombination, resulting in a significant weakening or even complete quenching of the photoluminescence signal intensity in that region compared to the surrounding normal region. By collecting the spatial distribution of photoluminescence signals on the surface of the perovskite light absorption layer 103 using a photoluminescence detection device and analyzing and comparing the signal intensity, the region where the photoluminescence signal intensity is abnormally weakened can be accurately located. This region is the short-circuit region between the first electrode 101 and the second electrode 105.

[0076] During the inspection process, an appropriate excitation wavelength and power can be selected based on the material properties and thickness of the perovskite light-absorbing layer 103. This ensures that the excitation light can effectively penetrate the second electrode 105 and excite the perovskite light-absorbing layer 103 to generate a photoluminescence signal, while avoiding damage to the perovskite light-absorbing layer 103 caused by excessively high-power excitation light. After the inspection is completed, the coordinate position and planar range of the defect area are determined based on the spatial distribution information of the photoluminescence signal, providing a precise process reference for subsequent removal steps.

[0077] In some embodiments, step S202 above, removing a portion of the film layer corresponding to the defect region, includes: removing the second electrode, the second carrier transport layer, the perovskite light absorption layer, and the first carrier transport layer using a laser.

[0078] When the second electrode 105 of the perovskite solar cell module has been formed, since the film layer corresponding to the defect region includes the second electrode 105, the second carrier transport layer 104, the perovskite light absorption layer 103 and the first carrier transport layer 102, it is necessary to use a laser to remove the part of each of the above film layers corresponding to the defect region.

[0079] During laser removal, precise control of process parameters such as laser scanning path, laser power, pulse frequency, scanning speed, and spot size is required. The laser scanning path should precisely match the shape and size of the defect area to ensure accurate alignment between the removal area and the planar position of the defect area. Laser power and pulse frequency determine the energy output characteristics of the laser beam and need to be optimized according to the material type and thickness of each film layer to ensure that the laser beam can penetrate and remove each film layer one by one. Scanning speed affects the interaction time between the laser and the film material; too fast a scanning speed may lead to incomplete film removal, while too slow a scanning speed may damage the first electrode 101. Through the coordinated control of the above parameters, the impact on the surrounding normal area can be minimized while ensuring complete removal of each film layer.

[0080] Regarding the removal depth, laser removal should terminate at the surface of the first electrode 101. That is, the laser needs to completely remove the second electrode 105, the second carrier transport layer 104, the perovskite light absorption layer 103, and the first carrier transport layer 102 corresponding to the defect area, until the surface of the first electrode 101 is exposed, while simultaneously preserving the first electrode 101 intact. To achieve this effect, the removal depth can be monitored in real time during the laser removal process using in-situ monitoring methods. Laser irradiation is stopped when the surface of the first electrode 101 is detected to be exposed. By precisely controlling the removal depth, a groove G is formed with the first electrode 101 at the bottom and the cross-sections of each film layer on the sidewalls. This groove G extends upwards from the surface of the first electrode 101 to the original surface position of the second electrode 105, providing space for the subsequent filling of the black filler layer 106.

[0081] In some embodiments, the surface of the black filler layer 106 facing away from the first electrode 101 is flush with the surface of the second carrier transport layer 104 facing away from the first electrode 101.

[0082] After a black filling layer 106 is formed within the groove G, the black filling layer 106 fills at least a portion of the bottom region of the groove G. The surface of the black filling layer 106 facing away from the first electrode 101 is flush with the surface of the second carrier transport layer 104 facing away from the first electrode 101. Specifically, the upper surface of the black filling layer 106 is substantially at the same level as the upper surface of the second carrier transport layer 104 in the sidewall of the groove.

[0083] Since the upper surface of the black filling layer 106 is flush with the surface of the second carrier transport layer 104, the black filling layer 106 only fills the lower space of the groove G. The upper space of the groove G (i.e., the space between the upper surface of the black filling layer 106 and the original upper surface of the second electrode 105) is used for the subsequent formation of the conductive layer 107. The conductive layer 107 is formed on the side of the black filling layer 106 away from the first electrode 101, and its thickness is basically the same as that of the second electrode 105, so that the repair area is consistent with the surrounding area in the thickness direction.

[0084] Secondly, the upper surface of the black filler layer 106 is flush with the surface of the second carrier transport layer 104, so that when the conductive layer 107 is subsequently formed, the bottom of the conductive layer 107 is in good contact with the upper surface of the black filler layer 106 and the surface of the second carrier transport layer 104. This helps to improve the bonding strength and interface quality between the conductive layer 107 and the surrounding film layers, and avoids interlayer peeling or poor contact caused by uneven surfaces.

[0085] In addition, the upper surface of the black filling layer 106 is flush with the surface of the second carrier transport layer 104, and the filling height of the black filling layer 106 in the groove G is consistent and uniform, without any local excessive height or low height, which further ensures the uniformity of the repair area in the thickness direction.

[0086] To achieve the aforementioned flush surface morphology, the injection amount of black filler material can be precisely controlled during the formation of the black filler layer 106, ensuring that the filler material precisely fills to the height of the upper surface of the second carrier transport layer 104. Alternatively, the black filler material can be slightly overflowed from the groove G, and then the excess can be removed by grinding or etching, making the upper surface of the black filler layer 106 flush with the surface of the second carrier transport layer 104.

[0087] In some embodiments, such as Figure 3As shown, when the perovskite solar cell module has not formed a second carrier transport layer and a second electrode, the above step S203, which forms a black filling layer in the groove, further includes step S205, which sequentially forms a second carrier transport layer and a second electrode on the side of the black filling layer away from the first electrode.

[0088] When the perovskite solar cell module has not yet formed the second carrier transport layer 104 and the second electrode 105, the surface of the perovskite light absorption layer 103 is directly exposed. At this time, the detected defect area typically appears as a pinhole area on the surface of the perovskite light absorption layer 103. After detecting and locating the defect area in step S201, a laser is used to remove the perovskite light absorption layer 103 and the first carrier transport layer 102 corresponding to the defect area, leaving the first electrode 101 intact, thereby forming a groove G. The bottom of the groove G is the exposed surface of the first electrode 101, and its sidewalls include the cross-sections of the first carrier transport layer 102 and the perovskite light absorption layer 103, respectively. After forming a black filling layer 106 in the groove G in step S203, it is necessary to continue forming the second carrier transport layer 104 and the second electrode 105 sequentially on the side of the black filling layer 106 facing away from the first electrode 101 (e.g., ...). Figure 12 As shown in the figure, this completes the fabrication of all film layers for the perovskite solar cell module.

[0089] During the formation of the second carrier transport layer 104 and the second electrode 105, the thickness and uniformity of each film layer should be controlled to ensure continuous coverage of the second carrier transport layer 104 and the second electrode 105 between the repaired area and the surrounding normal area, avoiding breaks or steps at the interface. Through the above steps, the electrical pathway of the repaired area is completely reconstructed, the normal power generation function of the perovskite solar cell module is restored, and the appearance of the repaired area is consistent with the surrounding normal area under the cover of the black filler layer 106.

[0090] In some embodiments, step S201 above, detecting defective regions in the perovskite light-absorbing layer, includes: using an automated optical inspection device to detect pinhole regions within the defective regions.

[0091] When the second carrier transport layer 104 and the second electrode 105 have not yet been formed in the perovskite solar cell module, the surface of the perovskite light absorption layer 103 is directly exposed. At this time, the defect region S of the perovskite light absorption layer 103 usually manifests as pinhole regions on the surface of the perovskite light absorption layer 103. The formation of pinhole regions is mainly due to factors such as uneven solution coating, mismatched solvent evaporation rates, interference from environmental particulate matter during the preparation of the perovskite light absorption layer 103, or uneven annealing temperature distribution, which cause the perovskite light absorption layer 103 to fail to form a complete covering film in local areas, thereby forming tiny pores or depressions on the surface of the perovskite light absorption layer 103. Although these pinhole regions do not yet cause electrical conductivity between the first electrode 101 and the subsequently fabricated second electrode 105, their presence directly affects the integrity and compactness of the perovskite light-absorbing layer 103, thereby affecting the fabrication quality of the subsequent second carrier transport layer 104 and the second electrode 105, ultimately adversely impacting the photoelectric conversion efficiency and long-term stability of the perovskite solar cell module. Simultaneously, the presence of pinhole regions also leads to visible defects on the surface of the perovskite solar cell module, affecting the product's appearance quality and market acceptance.

[0092] For perovskite solar cell modules that have not yet formed the second carrier transport layer 104 and the second electrode 105, automated optical inspection equipment can be used for inspection. Automated optical inspection is a non-destructive inspection technology based on machine vision. Its basic principle is to use a high-resolution optical imaging system to scan and image the surface of the perovskite light absorption layer 103, obtaining a high-definition digital image of the surface of the perovskite light absorption layer 103. Then, the acquired image is analyzed and identified through image processing algorithms. Since the physical morphology of the pinhole region differs significantly from the surrounding normal perovskite light absorption layer 103 surface, specifically manifested as local depressions, color changes, altered reflectivity, or abnormal boundary contours, the image processing algorithm can automatically identify and mark the locations that match the characteristics of the pinhole region through grayscale analysis, edge detection, shape matching, and pattern recognition.

[0093] During automated optical inspection, appropriate light source type and illumination method can be selected based on the surface characteristics of the perovskite light-absorbing layer 103 and the size range of pinhole defects. For example, a ring light source can be used to provide uniform illumination conditions, or a coaxial light source can be used to enhance the contrast between the pinhole area and the surrounding area. Simultaneously, appropriate detection accuracy and judgment thresholds can be set according to the size and density of the pinholes to balance detection sensitivity and accuracy, avoiding missed or false detections.

[0094] In some embodiments, step S202 above, removing a portion of the film layer corresponding to the defect region, includes: removing the perovskite light absorption layer and the first carrier transport layer using a laser.

[0095] When the perovskite solar cell module has not yet formed the second carrier transport layer 104 and the second electrode 105, the surface of the perovskite light absorption layer 103 is directly exposed, and the second carrier transport layer 104 and the second electrode 105 have not yet been formed on it. In this case, the film layer corresponding to the defect region S only includes the perovskite light absorption layer 103 and the first carrier transport layer 102. Therefore, a laser is used to remove the perovskite light absorption layer 103 and the first carrier transport layer 102 corresponding to the defect region. Compared with the case where the second electrode 105 has been fabricated, the number of film layers to be removed and the total thickness are thinner in this embodiment.

[0096] During laser removal, precise control of process parameters such as laser scanning path, laser power, pulse frequency, scanning speed, and spot size is required. The laser scanning path should precisely match the shape and size of the defect region to ensure accurate alignment of the removal area with the planar position of the defect region S. Laser power and pulse frequency determine the energy output characteristics of the laser beam. Since the film to be removed in this embodiment only includes the perovskite light-absorbing layer 103 and the first carrier transport layer 102, the total thickness of the film is thinner compared to the case where the second electrode 105 has been fabricated. Therefore, the laser energy can be reduced by approximately 30% to avoid damage to the first electrode 101. The scanning speed affects the interaction time between the laser and the film material. An excessively fast scanning speed may result in incomplete film removal, while an excessively slow scanning speed may cause thermal damage to the first electrode 101. Through the coordinated control of the above parameters, the impact on the surrounding normal area and the first electrode 101 can be minimized while ensuring complete removal of each film layer.

[0097] Regarding the removal depth, laser removal should terminate at the surface of the first electrode 101. That is, the laser needs to completely remove the perovskite light-absorbing layer 103 and the first carrier transport layer 102 corresponding to the defect area until the surface of the first electrode 101 is exposed, while simultaneously preserving the first electrode 101 intact. To achieve this effect, the number of laser pulses and energy density can be precisely controlled so that the laser's action depth terminates precisely at the interface between the first electrode 101 and the first carrier transport layer 102. Alternatively, the removal depth can be monitored in real time using in-situ monitoring methods, stopping laser irradiation when the surface of the first electrode 101 is detected to be exposed. By precisely controlling the removal depth, a groove G is formed with the first electrode 101 at the bottom and the cross-sections of each film layer on the sidewalls. This groove G extends upwards from the surface of the first electrode 101 to the original surface position of the perovskite light-absorbing layer 103, providing space for the subsequent filling of the black filler layer 106.

[0098] In some embodiments, the surface of the black filler layer 106 facing away from the first electrode 101 is flush with the surface of the perovskite light absorption layer 103 facing away from the first electrode 101.

[0099] After a black filler layer 106 is formed in the groove, the black filler layer 106 fills at least a portion of the bottom region of the groove G. In some embodiments, the surface of the black filler layer 106 facing away from the first electrode 101 is flush with the surface of the perovskite light-absorbing layer 103 facing away from the first electrode 101. Specifically, the upper surface of the black filler layer 106 is substantially at the same level as the upper surface of the perovskite light-absorbing layer 103 in the sidewall of the groove G.

[0100] Since the upper surface of the black filling layer 106 is flush with the surface of the perovskite light absorption layer 103, the black filling layer 106 precisely fills the entire space of the groove G, ensuring that the repaired area maintains the same thickness as the surrounding area. Because the second carrier transport layer 104 and the second electrode 105 have not yet been formed in this embodiment of the perovskite solar cell module, after the black filling layer 106 is formed, the second carrier transport layer 104 and the second electrode 105 need to be formed sequentially on the side of the black filling layer 106 away from the first electrode 101. The flush surface of the black filling layer 106 with the surface of the perovskite light absorption layer 103 allows the second carrier transport layer 104 to form a continuous, stepless cover layer between the upper surface of the black filling layer 106 and the surface of the perovskite light absorption layer 103 during subsequent fabrication, preventing film breakage or uneven thickness due to surface height differences.

[0101] Secondly, the upper surface of the black filling layer 106 is flush with the surface of the perovskite light absorption layer 103, which is also beneficial for the subsequent fabrication of the second electrode 105. The second electrode 105 can form a flat and continuous conductive layer, ensuring that the current collection and output capability of the repair area is consistent with the surrounding normal area, and avoiding local resistance increase or uneven current distribution caused by the electrode layer being concave or convex in the repair area.

[0102] Furthermore, the upper surface of the black filling layer 106 is flush with the surface of the perovskite light absorption layer 103, so that the second carrier transport layer 104 has the same thickness in the repair area and the surrounding area, ensuring the consistency of the carrier transport path and avoiding the decrease in carrier transport efficiency caused by the thickness difference of the second carrier transport layer 104.

[0103] To achieve the aforementioned flush surface morphology, the injection amount of black filler material can be precisely controlled during the formation of the black filler layer 106, ensuring that the filler material precisely fills to the height of the upper surface of the perovskite light-absorbing layer 103. Alternatively, the black filler material can be slightly overflowed from the groove G, and then the excess can be removed by grinding or etching, making the upper surface of the black filler layer 106 flush with the surface of the perovskite light-absorbing layer 103.

[0104] In some embodiments, step S203 above, forming a black filling layer in the groove, includes: injecting black photoresist into the groove using a nano-pinhole injection method, and then curing it to form a black filling layer.

[0105] Nanoparticle injection technology is a process method suitable for precise filling of micro- and nano-scale spaces. It utilizes a needle with a tip size at the nanometer or micrometer level, along with a precision positioning system and a micro-injection device, to inject liquid or semi-liquid filling material into the target area precisely and quantitatively. Since the defect area (i.e., the pinhole area) in the perovskite light-absorbing layer 103 is itself a micro- and nano-scale porous structure, the groove G formed after laser removal is essentially the same size as the defect area in terms of planar dimensions, also belonging to a micro-scale structure. The fine needle tip of the nanoparticle injection method can precisely enter the groove G, directly delivering black photoresist to the bottom of the groove G, achieving precise filling of the micro-groove G. This effectively prevents the filling material from overflowing into the normal area outside the groove G, ensuring the accuracy of the repair.

[0106] During the injection process, the pressure and injection volume of the micro-injection device are controlled to allow the black photoresist to be injected into the groove at a slow and uniform rate. The black photoresist has good fluidity at room temperature, allowing it to flow fully into the bottom and corners of the groove G, ensuring complete filling of the entire space and preventing air bubbles or voids from remaining within the groove G. Simultaneously, the movement path of the injection needle can be adjusted to ensure uniform distribution of the black photoresist within the groove G, avoiding localized accumulation or insufficient filling. The nano-needle injection method offers excellent controllability and repeatability in filling the groove G, enabling stable and consistent filling results in large-scale production while avoiding the need for additional cleaning processes due to filler material overflowing into surrounding normal areas.

[0107] Black photoresist is a photosensitive polymer material whose main components include a polymer matrix, photosensitizers, and other additives. The polymer matrix provides the black photoresist with basic film-forming properties and mechanical strength; the photosensitizer causes a chemical cross-linking reaction when the black photoresist is exposed to light of a specific wavelength, thereby altering its solubility in the developer; and the additives are used to adjust the viscosity, leveling properties, adhesion, and other processing properties of the black photoresist. Black photoresist itself is black and retains its black appearance after curing.

[0108] After injection, the black photoresist filled in the groove G is cured. The curing process transforms the black photoresist from a liquid or semi-liquid state into a solid state, forming a structurally stable and reliable black filling layer 106. In some embodiments, curing is performed using a heating plate that heats from both above and below. Specifically, the perovskite solar cell assembly is placed on the heating plate, and the black photoresist is heated from below by the heating plate. Simultaneously, an upper heating plate can be used to assist heating from above, ensuring that the black photoresist is heated in both directions, guaranteeing uniform heating and curing efficiency. The curing temperature can be set to 150°C to 200°C. This temperature range is close to the preparation temperature of the perovskite light-absorbing layer 103 (typically between 100°C and 200°C), therefore, the crystal structure and photoelectric properties of the perovskite light-absorbing layer 103 will not be damaged during curing. This temperature is also suitable for the cross-linking reaction of the polymer in the black photoresist to form a stable structure. The curing time can be set according to the specific type and thickness of the black photoresist, for example, it can be set to 5 minutes to 30 minutes, until the black photoresist is completely cured.

[0109] The cured black photoresist forms a black filler layer 106, which fills the groove G, covers the exposed surface of the first electrode 101, and is in close contact with the cross-sections of each film layer on the sidewall of the groove G. The black filler layer 106 serves a dual function in the perovskite solar cell module: insulation and appearance masking. In terms of insulation, the black filler layer 106 is made of insulating material with high resistivity, effectively blocking the electrical conduction between the first electrode 101 and the second electrode 105, thus solving the short-circuit problem caused by defects in the perovskite light-absorbing layer 103. In terms of appearance masking, the black filler layer 106 itself is black, consistent with the color of the perovskite light-absorbing layer 103 (usually close to black), making the filled area indistinguishable in color from the surrounding normal area. When viewed from the light-incident surface, the defective area is not visible, thereby improving the appearance quality of the perovskite solar cell module.

[0110] Secondly, embodiments of this disclosure provide a perovskite solar cell module. Figure 13 This is a schematic diagram of the structure of a perovskite solar cell module provided in an embodiment of this disclosure, as shown below. Figure 13 As shown, the perovskite solar cell module includes: a first electrode 101, a first carrier transport layer 102, a perovskite light absorption layer 103, a second carrier transport layer 104, and a second electrode 105, which are stacked sequentially; the perovskite light absorption layer 103 has a defect region S, and a groove G is formed in the defect region S that penetrates the perovskite light absorption layer 103; the groove G also penetrates the first carrier transport layer 102 and exposes the first electrode 101; the perovskite solar cell module also includes: a black filling layer 106; the black filling layer 106 fills the groove G.

[0111] The perovskite light-absorbing layer 103 is the photoelectric conversion layer of the perovskite solar cell module, used to absorb sunlight and generate photogenerated carriers. The first carrier transport layer 102 can be a hole transport layer or an electron transport layer, and correspondingly, the second carrier transport layer 104 can be an electron transport layer or a hole transport layer, depending on whether the perovskite solar cell module has a formal or inverted structure. The first electrode 101 serves as one side electrode of the perovskite solar cell module, and its material can be a transparent conductive oxide (such as indium tin oxide ITO or fluorine-doped tin oxide FTO) to ensure that light can effectively enter the perovskite light-absorbing layer 103. The second electrode 105 serves as the other side electrode of the perovskite solar cell module, and its material can be a metal (such as gold, silver, copper, aluminum, etc.) or a conductive oxide, used to collect and conduct current.

[0112] The perovskite light-absorbing layer 103 has a defect region S. The defect region S refers to an abnormal area in the perovskite light-absorbing layer 103 caused by foreign matter, pinholes, cracks, or other structural damage. Before repair, this defect region S may have already caused electrical conduction (i.e., a short circuit) between the first electrode 101 and the second electrode 105, or it may not have formed conduction but has external defects such as pinholes. A groove G is formed in the perovskite light-absorbing layer 103 at the defect region S. This groove G penetrates the entire thickness direction of the perovskite light-absorbing layer 103, that is, the groove G extends from the upper surface to the lower surface of the perovskite light-absorbing layer 103. Simultaneously, the groove G further penetrates downwards through the entire thickness direction of the first carrier transport layer 102, exposing the surface of the first electrode 101. In other words, the groove G passes sequentially through the second electrode 105, the second carrier transport layer 104, the perovskite light absorption layer 103, and the first carrier transport layer 102 in the thickness direction, and its bottom terminates at the surface of the first electrode 101, thus exposing the surface of the first electrode 101 at the bottom of the groove G. The horizontal extent of the groove G is basically consistent with the planar extent of the defect region S, that is, the groove G and the defect region S are precisely aligned in position, thereby avoiding unnecessary removal of the surrounding normal area.

[0113] The perovskite solar cell module also includes a black filler layer 106. The black filler layer 106 fills the groove G. Specifically, the black filler layer 106 fills the bottom region of the groove G, with its bottom contacting the exposed surface of the first electrode 101, and its sidewalls contacting the cross-sections of each film layer on the sidewalls of the groove G. The black filler layer 106 is made of an insulating material, effectively isolating the electrical conduction between the first electrode 101 and the second electrode 105, thereby solving the short circuit problem caused by defects in the perovskite light-absorbing layer 103. Simultaneously, the black filler layer 106 itself is black, consistent with the color of the perovskite light-absorbing layer 103 (typically close to black), making the repaired area invisible when viewed from the light-incident surface, thus improving the appearance quality of the perovskite solar cell module.

[0114] In some embodiments, such as Figure 13 As shown, the groove G also penetrates the second carrier transport layer 104 and the second electrode 105; the perovskite solar cell assembly also includes: a conductive layer 107; the conductive layer 107 is located on the side of the black filler layer 106 opposite to the first electrode 101.

[0115] The groove G also penetrates the second carrier transport layer 104 and the second electrode 105. That is, the groove G penetrates the second electrode 105, the second carrier transport layer 104, the perovskite light absorption layer 103, and the first carrier transport layer 102 in the thickness direction, completely exposing the surface of the first electrode 101 at this location. The perovskite solar cell module also includes a conductive layer 107, located on the side of the black filler layer 106 opposite to the first electrode 101. The conductive layer 107 is used to reconstruct the electrical path of the repaired area. Since the second electrode 105 has been removed at the defect area S, by setting the conductive layer 107, the current in the repaired area can be effectively collected and discharged through the conductive layer 107, thereby ensuring that the perovskite solar cell module can still maintain normal power generation function after repair. The horizontal extent of the conductive layer 107 is substantially the same as the horizontal extent of the groove G, that is, the conductive layer 107 is formed above the black filler layer 106 and does not exceed the boundary of the black filler layer 106, thereby avoiding unnecessary electrical contact with the first electrode 101. The conductive layer 107 forms a good electrical contact with the surrounding retained second electrode 105, ensuring that current can be smoothly transmitted between the repair area and the surrounding area.

[0116] In some embodiments, such as Figure 13 As shown, the conductive layer 107 is made of metal powder.

[0117] Metal powders possess excellent electrical conductivity, enabling efficient transport of photogenerated carriers, and exhibit good compatibility with commonly used electrode materials in perovskite solar cell modules. Optionally, the metal powder can be tungsten powder, copper powder, silver powder, gold powder, or nickel powder, etc. Preferably, the conductive layer 107 is made of tungsten powder. Tungsten powder has a high melting point, good chemical and thermal stability, and exhibits good interfacial contact performance with commonly used electrode materials in perovskite solar cell modules (such as silver, copper, gold, etc.). It is less prone to diffusion or reaction during subsequent processes and long-term use, ensuring the long-term reliability of the electrical performance of the repaired area. In some embodiments, the thickness of the conductive layer 107 is substantially the same as the thickness of the second electrode 105, ensuring that the repaired area maintains consistency with the surrounding area in the thickness direction.

[0118] In some embodiments, such as Figure 13 As shown, the surface of the black filling layer 106 facing away from the first electrode 101 is flush with the surface of the second carrier transport layer 104 facing away from the first electrode 101.

[0119] The upper surface of the black filler layer 106 is substantially at the same level as the upper surface of the second carrier transport layer 104 in the sidewall of the groove G. This arrangement ensures that the black filler layer 106 only fills the lower space of the groove G, while the upper space of the groove G (i.e., the space between the upper surface of the black filler layer 106 and the original upper surface of the second electrode 105) is used to accommodate the conductive layer 107. The thickness of the conductive layer 107 is substantially the same as the thickness of the second electrode 105, thus ensuring that the repaired area is consistent with the surrounding area in the thickness direction. Simultaneously, the upper surface of the black filler layer 106 is flush with the surface of the second carrier transport layer 104, ensuring good contact between the bottom of the conductive layer 107 and both the upper surface of the black filler layer 106 and the surface of the second carrier transport layer 104. This helps improve the bonding strength and interface quality between the conductive layer 107 and the surrounding film layers, avoiding interlayer delamination or poor contact caused by surface unevenness.

[0120] Figure 14 A schematic diagram of another perovskite solar cell module provided in this disclosure embodiment is shown below. Figure 14 As shown, the second carrier transport layer 104 is located on the side of the black filler layer 106 opposite to the first electrode 101.

[0121] Figure 14 The perovskite solar cell module shown is Figure 13 The difference in the perovskite solar cell module shown is that the second carrier transport layer 104 and the second electrode 105 were not formed before the repair. After detecting the defect region S, a laser is used to remove the perovskite light absorption layer 103 and the first carrier transport layer 102 corresponding to the defect region S, while retaining the first electrode 101, thereby forming a groove G. After forming a black filling layer 106 in the groove G, the second carrier transport layer 104 and the second electrode 105 are then formed sequentially on the side of the black filling layer 106 opposite to the first electrode 101 to complete the full film structure of the perovskite solar cell module.

[0122] In some embodiments, such as Figure 14 As shown, the surface of the black filling layer 106 facing away from the first electrode 101 is flush with the surface of the perovskite light absorption layer 103 facing away from the first electrode 101.

[0123] The upper surface of the black filling layer 106 is essentially at the same level as the upper surface of the perovskite light-absorbing layer 103 in the sidewall of the groove G. This arrangement ensures that the black filling layer 106 completely fills the space of the groove G, making the repaired area consistent with the surrounding area in the thickness direction. The flush surface of the black filling layer 106 with the surface of the perovskite light-absorbing layer 103 allows the subsequent fabrication of the second carrier transport layer 104 to form a continuous, stepless covering layer between the upper surface of the black filling layer 106 and the surface of the perovskite light-absorbing layer 103. This avoids film breakage or uneven thickness caused by surface height differences, ensuring that the carrier transport path in the repaired area is consistent with the surrounding normal area. Simultaneously, the second electrode 105 can also form a flat and continuous conductive layer, ensuring that the current collection and extraction capabilities of the repaired area are consistent with the surrounding normal area.

[0124] It should be noted here that, Figure 13 and Figure 14 In the structure shown, the groove G and the defect region S are in Figure 13 and Figure 14 The diagram is not shown in the figure; however, it can be referenced from the previous intermediate structure diagram, for example... Figure 4 , Figure 5 , Figure 6 , Figure 9 and Figure 10 .

[0125] It is understood that the embodiments described above are merely several exemplary embodiments used by this disclosure to illustrate the technical principles, and are not intended to exhaustively describe or limit the scope of protection of this disclosure. This disclosure is not limited to the operation sequence, structural parameters, or numerical ranges specifically described above. For those skilled in the art, various reasonable variations, substitutions, modifications, improvements, or additions and deletions can be made based on the teachings of this disclosure without departing from the core spirit and inventive essence of this disclosure. These variations and improvements made in response to actual application scenarios or technological evolution needs, as long as they do not substantially deviate from the technical principles disclosed in this disclosure, should all be considered to fall within the scope of protection of this disclosure. The scope of protection of this disclosure should be determined by the appended claims and their equivalents, and not by the textual description of the specific embodiments described above.

Claims

1. A method for repairing a perovskite solar cell module, characterized in that, The perovskite solar cell module includes: a first electrode, a first carrier transport layer, a perovskite light absorption layer, a second carrier transport layer, and a second electrode, which are sequentially stacked; the repair method for the perovskite solar cell module includes: Detect the defect region of the perovskite light-absorbing layer; The portion of the film corresponding to the defect area is removed, while the first electrode is retained to form a groove; A black filling layer is formed within the groove.

2. The method for repairing perovskite solar cell modules according to claim 1, characterized in that, When the perovskite solar cell assembly has formed the second electrode, the process of forming a black filler layer in the groove further includes: A conductive layer is formed on the side of the black filler layer opposite to the first electrode.

3. The method for repairing perovskite solar cell modules according to claim 2, characterized in that, The formation of a conductive layer on the side of the black filler layer opposite to the first electrode includes: A conductive layer is formed by laser chemical vapor deposition; the material of the conductive layer is metal powder.

4. The method for repairing perovskite solar cell modules according to claim 2, characterized in that, The detection of defect regions in the perovskite light-absorbing layer includes: The short-circuit region between the first electrode and the second electrode in the defect area is detected using a photoluminescence detection device.

5. The method for repairing perovskite solar cell modules according to claim 2, characterized in that, The step of removing a portion of the film layer corresponding to the defective region includes: The second electrode, the second carrier transport layer, the perovskite light absorption layer, and the first carrier transport layer are removed using a laser.

6. The method for repairing perovskite solar cell modules according to claim 2, characterized in that, The surface of the black filler layer facing away from the first electrode is flush with the surface of the second carrier transport layer facing away from the first electrode.

7. The method for repairing perovskite solar cell modules according to claim 1, characterized in that, When the perovskite solar cell assembly has not formed the second carrier transport layer and the second electrode, the process of forming a black filler layer in the groove further includes: The second carrier transport layer and the second electrode are sequentially formed on the side of the black filler layer opposite to the first electrode.

8. The method for repairing a perovskite solar cell module according to claim 7, characterized in that, The detection of defect regions in the perovskite light-absorbing layer includes: The pinhole region in the defect area is detected using an automated optical inspection device.

9. The method for repairing a perovskite solar cell module according to claim 7, characterized in that, The step of removing a portion of the film layer corresponding to the defective region includes: The perovskite light-absorbing layer and the first carrier transport layer are removed using a laser.

10. The method for repairing a perovskite solar cell module according to claim 7, characterized in that, The surface of the black filler layer facing away from the first electrode is flush with the surface of the perovskite light-absorbing layer facing away from the first electrode.

11. The method for repairing a perovskite solar cell module according to claim 1, characterized in that, The formation of a black filling layer within the groove includes: Black photoresist is injected into the groove using a nano-pinhole injection method, and then cured to form the black filling layer.

12. A perovskite solar cell module, characterized in that, The perovskite solar cell assembly includes: a first electrode, a first carrier transport layer, a perovskite light absorption layer, a second carrier transport layer, and a second electrode, which are stacked sequentially. The perovskite light-absorbing layer has a defect region, and a groove is formed in the defect region that penetrates the perovskite light-absorbing layer; the groove also penetrates the first carrier transport layer and exposes the first electrode; the perovskite solar cell assembly further includes: a black filler layer; The black filler layer fills the groove.

13. The perovskite solar cell module according to claim 12, characterized in that, The groove also extends through the second carrier transport layer and the second electrode; the perovskite solar cell assembly further includes: a conductive layer; The conductive layer is located on the side of the black filler layer opposite to the first electrode.

14. The perovskite solar cell module according to claim 13, characterized in that, The conductive layer is made of metal powder.

15. The perovskite solar cell module according to claim 13, characterized in that, The surface of the black filler layer facing away from the first electrode is flush with the surface of the second carrier transport layer facing away from the first electrode.

16. The perovskite solar cell module according to claim 12, characterized in that, The second carrier transport layer is located on the side of the black filler layer opposite to the first electrode.

17. The perovskite solar cell module according to claim 16, characterized in that, The surface of the black filler layer facing away from the first electrode is flush with the surface of the perovskite light-absorbing layer facing away from the first electrode.

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