Gas mixture for ion implantation

Abstract

An assembly for ion implantation is provided herein. An assembly includes at least one container configured to be fluidly coupled to an arc chamber of an ion implantation device. The at least one container includes a gas composition comprising BF3 and B2F4. When the gas composition is supplied from the at least one container to the arc chamber for implanting into a substrate, a beam current of boron ions generated from the gas composition is greater than a beam current of boron ions generated from a control gas composition. Related systems and related methods including ion implantation systems are provided herein.

Description

Technical Field

[0001] This disclosure relates to gas mixtures for ion implantation, as well as related systems and methods.

[0002] Cross-reference of related applications

[0003] This application claims the rights of U.S. Provisional Patent Application No. 63 / 564,295, filed March 12, 2024, pursuant to 35 USC 119, the entire contents of which are hereby incorporated herein by reference. Background Technology

[0004] Ion implantation involves implanting chemical species into a substrate (such as a microelectronic device wafer) by bombarding it with high-energy ions. To generate ion-implanted species, a gas is ionized to produce an ion beam. Summary of the Invention

[0005] Some embodiments relate to an assembly for ion implantation. In some embodiments, the assembly includes at least one container configured to be fluidly coupled to an arc chamber of an ion implantation device. In some embodiments, the at least one container includes a gas component. In some embodiments, the gas component includes BF3 and B2F4. In some embodiments, when the gas component is supplied from the at least one container to the arc chamber for implantation into a substrate, the beam current of boron ions generated from the gas component is greater than the beam current of boron ions generated from a control gas component.

[0006] Some embodiments relate to a system for ion implantation. In some embodiments, the system includes an assembly. In some embodiments, the assembly includes at least one container fluidly coupled to an arc chamber of an ion implantation device. In some embodiments, the at least one container includes a gas component. In some embodiments, the gas component includes BF3 and B2F4. In some embodiments, when the gas component is supplied from the at least one container to the arc chamber for implantation into a substrate, the beam current of boron ions generated from the gas component is greater than the beam current of boron ions generated from a control gas component.

[0007] Some embodiments relate to an ion implantation method. In some embodiments, the method includes flowing a gaseous component from at least one container into an arc chamber of an ion implantation apparatus. In some embodiments, the gaseous component includes BF3 and B2F4. In some embodiments, the method includes generating boron ions from the gaseous component in the arc chamber of the ion implantation apparatus. In some embodiments, the method includes flowing the boron ions in a beam from the arc chamber into a target chamber for implantation into a substrate. Attached Figure Description

[0008] Referring to the accompanying drawings, some embodiments of this disclosure are described herein by way of example only. Detailed reference is now made to the drawings, and it should be emphasized that the illustrated embodiments are examples and for the purpose of illustrative discussion of embodiments of this disclosure. In this regard, the description in conjunction with the drawings will enable those skilled in the art to understand how embodiments of this disclosure can be practiced.

[0009] Figure 1 A schematic diagram of an ion implantation system according to some embodiments is depicted.

[0010] Figure 2 This is a flowchart of a method for ion implantation according to some embodiments.

[0011] Figure 3 Based on some embodiments, the change in total gas flow rate (sccm) of control A and sample A is B. + A graphical view of the beam current.

[0012] Figure 4 It is a graphical view of the beam spectrum of a control A and a sample A according to some embodiments.

[0013] Figure 5 The total gas flow rate (sccm) is based on the changes in control B and sample B according to some embodiments. + A graphical view of the beam current.

[0014] Figure 6 The total gas flow rate (sccm) of BF2 is based on the changes in control C and sample C according to some embodiments. + A graphical view of the beam current.

[0015] Figure 7 It is a graphical view of the beam spectrum of a control C and a sample C according to some embodiments.

[0016] Figure 8 The total gas flow rate (sccm) of BF2 is based on the changes in control D and sample D according to some embodiments. + A graphical view of the beam current.

[0017] Figure 9 It is a graphical view of the beam spectrum of a control D and a sample D according to some embodiments.

[0018] Figure 10 It is a gas mixture with varying B2F4 concentration according to some embodiments. + A graphical view of the beam current. Detailed Implementation

[0019] Some implementations involve gas mixtures for ion implantation. As disclosed herein, said gas mixtures for ion implantation exhibit improved performance when used for ion implantation. For example, when used for ion implantation, the gas mixtures disclosed herein significantly reduce W + Spikes and other unexpectedly extended source lifetime. When used for ion implantation, the gas mixture disclosed herein unexpectedly increased B. + Beam current. When used for ion implantation, the gas mixture disclosed herein unexpectedly increases BF2. + Beam current. Upon review of this disclosure, other benefits and improvements of the gas mixtures disclosed herein, together with the benefits and improvements of the related systems, methods, apparatus and assemblies, will be apparent.

[0020] Some embodiments relate to an assembly. For example, in some embodiments, the assembly is a gas supply assembly. The assembly may include at least one container configured to contain a gaseous component. The at least one container may include a single container or multiple containers, for example (but not limited to) two to one hundred containers, or any number of containers between two and one hundred. The at least one container may be configured to store the gaseous component and supply the gaseous component to an ion implantation device, such as the arc chamber of an ion implantation device. In some embodiments, for example, the at least one container is configured to be fluidly coupled to the arc chamber of the ion implantation device.

[0021] In some embodiments, the gaseous component includes boron. In some embodiments, the gaseous component includes isotopically enriched boron.

[0022] As used herein, the term "isotope enrichment" refers to a molecule containing an isotope at a level higher than a reference level. In some embodiments, the reference level is the natural abundance level. For example, in some embodiments, including a molecule isotopically enriched in boron refers to a molecule containing a boron isotope at a level higher than the natural abundance level. In some embodiments, the reference level is an initial amount of boron isotope, and the molecule is modified to increase the amount of boron isotope above the initial amount. The percentage increase may range from 1% to 100%, or any range or subrange between 1% and 100%, or in some examples greater than 100%. It should be understood that isotope enrichment in boron may include any isotope of boron, including (e.g., but not limited to) 6 B. 7 B. 8 B. 9 B. 10 B. 11 B. 12 B. 13 B. 14 B. 15 B. 16B. 17 B. 18 B. 19 B. 20 B. 21 At least one of B or any combination thereof.

[0023] In some embodiments, the at least one container comprises BF3. In some embodiments, the BF3 comprises isotopically enriched boron.

[0024] In one embodiment, the at least one container comprises BF3 of 1% to 99% of the total volume of the gaseous components, or any range or subrange between 1% and 99%. In some embodiments, for example, the at least one container comprises BF3 of 1% to 90% of the total volume of the gaseous components, 1% to 80% of the total volume of the gaseous components, 1% to 70% of the total volume of the gaseous components, 1% to 60% of the total volume of the gaseous components, 1% to 50% of the total volume of the gaseous components, 1% to 40% of the total volume of the gaseous components, 1% to 30% of the total volume of the gaseous components, 1% to 20% of the total volume of the gaseous components, 1% to 10% of the total volume of the gaseous components, 10% to 99% of the total volume of the gaseous components, 20% to 99% of the total volume of the gaseous components, 30% to 99% of the total volume of the gaseous components, 40% to 99% of the total volume of the gaseous components, 50% to 99% of the total volume of the gaseous components, 60% to 99% of the total volume of the gaseous components, 70% to 99% of the total volume of the gaseous components, 80% to 99% of the total volume of the gaseous components, or 90% to 99% of the total volume of the gaseous components.

[0025] In some embodiments, the at least one container comprises B2F4. In some embodiments, the B2F4 comprises isotopically enriched boron.

[0026] In some embodiments, the at least one container comprises B2F4 in any range or subrange between 1% and 99% of the total volume of the gas composition. In some embodiments, for example, the at least one container comprises B2F4 in any range or subrange between 1% and 99% of the total volume of the gas composition.

[0027] In some embodiments, the at least one container comprises B2F4 of 2% to 50% of the total volume of the gas composition, or any range or subrange between 2% and 50%. For example, in some embodiments, the at least one container comprises B2F4 of 2% to 45% of the total volume of the gas composition, 2% to 40% of the total volume of the gas composition, 2% to 35% of the total volume of the gas composition, 2% to 30% of the total volume of the gas composition, 2% to 25% of the total volume of the gas composition, 2% to 20% of the total volume of the gas composition, 2% to 15% of the total volume of the gas composition, 2% to 10% of the total volume of the gas composition, 2% to 5% of the total volume of the gas composition, 5% to 50% of the total volume of the gas composition, 10% to 50% of the total volume of the gas composition, 15% to 50% of the total volume of the gas composition, 20% to 50% of the total volume of the gas composition, 25% to 50% of the total volume of the gas composition, 30% to 50% of the total volume of the gas composition, 35% to 50% of the total volume of the gas composition, 40% to 50% of the total volume of the gas composition, or 45% to 50% of the total volume of the gas composition.

[0028] In some embodiments, the at least one container comprises BF3 of 50% to 98% of the total volume of the gas composition, or any range or subrange between 50% and 98%. In some embodiments, the at least one container comprises BF3 of 50% to 98% of the total volume of the gas composition, 50% to 95% of the total volume of the gas composition, 50% to 95% of the total volume of the gas composition, 50% to 80% of the total volume of the gas composition, 50% to 75% of the total volume of the gas composition, 50% to 70% of the total volume of the gas composition, 50% to 65% of the total volume of the gas composition, 50% to 60% of the total volume of the gas composition, 50% to 55% of the total volume of the gas composition, 55% to 98% of the total volume of the gas composition, 60% to 98% of the total volume of the gas composition, 65% to 98% of the total volume of the gas composition, 70% to 98% of the total volume of the gas composition, 75% to 98% of the total volume of the gas composition, 80% to 98% of the total volume of the gas composition, 85% to 98% of the total volume of the gas composition, 90% to 98% of the total volume of the gas composition, or 95% to 98% of the total volume of the gas composition.

[0029] In some embodiments, the at least one container comprises B2F4 of 5 to 20% of the total volume of the gas composition, or any range or subrange between 5 and 20%. In some embodiments, the at least one container comprises B2F4 of 5 to 18%, 5 to 16%, 5 to 15%, 5 to 14%, 5 to 12%, 5 to 10%, 5 to 8%, 5 to 6%, 6 to 20%, 8 to 20%, 10 to 20%, 12 to 20%, 14 to 20%, 15 to 20%, 16 to 20%, or 18 to 20%.

[0030] In some embodiments, the at least one container comprises BF3 of 80% to 95% of the total volume of the gas composition, or any range or subrange between 80% and 95% of the total volume. In some embodiments, the at least one container comprises BF3 of 80% to 94% of the total volume of the gas composition, 80% to 92% of the total volume of the gas composition, 80% to 90% of the total volume of the gas composition, 80% to 88% of the total volume of the gas composition, 80% to 86% of the total volume of the gas composition, 80% to 85% of the total volume of the gas composition, 80% to 84% of the total volume of the gas composition, 80% to 82% of the total volume of the gas composition, 82% to 95% of the total volume of the gas composition, 84% to 95% of the total volume of the gas composition, 85% to 95% of the total volume of the gas composition, 86% to 95% of the total volume of the gas composition, 88% to 95% of the total volume of the gas composition, 90% to 95% of the total volume of the gas composition, 92% to 95% of the total volume of the gas composition, or 94% to 95% of the total volume of the gas composition.

[0031] In some embodiments, the at least one container further comprises a second gas component. In some embodiments, the second gas component comprises at least one or any combination of boron-containing gas, hydrogen, hydride gas, inert gas, ionizable gas, diluent gas, carrier gas, and co-gas. In some embodiments, the hydrogen comprises H2. In some embodiments, the hydride gas comprises a gas of chemical formula A. x H y The compound, wherein A is an element other than hydrogen, x is 1 to 8, and y is 1 to 8. In some embodiments, the hydride gas includes, for example, at least one or any combination of PH3, AsH3, B2H6, SiH4, GeH4, and NH3. In some embodiments, the inert gas includes at least one or any combination of nitrogen, hydrogen, neon, argon, krypton, and xenon. In some embodiments, the inert gas includes at least one or any combination of N2, H2, Ne, Ar, Kr, and Xe.

[0032] In some embodiments, the at least one container comprises the gas component in a range or subrange of 1% to 99% of the total volume of the gas component and the second gas component. In some embodiments, for example, the at least one container comprises the gas component in a range of 1% to 90% of the total volume of the gas component and the second gas component, 1% to 80% of the total volume of the gas component and the second gas component, 1% to 70% of the total volume of the gas component and the second gas component, 1% to 60% of the total volume of the gas component, 1% to 50% of the total volume of the gas component, 1% to 40% of the total volume of the gas component, 1% to 30% of the total volume of the gas component, 1% to 20% of the total volume of the gas component, 1% to 10% of the total volume of the gas component, 10% to 99% of the total volume of the gas component, 20% to 99% of the total volume of the gas component, 30% to 99% of the total volume of the gas component, 40% to 99% of the total volume of the gas component, 50% to 99% of the total volume of the gas component, 60% to 99% of the total volume of the gas component, 70% to 99% of the total volume of the gas component, 80% to 99% of the total volume of the gas component, or 90% to 99% of the total volume of the gas component.

[0033] In some embodiments, the at least one container includes 1 to 99% by volume of the second gas component based on the total volume of the gas component and the second gas component. In some embodiments, for example, the at least one container includes 1 to 90% by volume, 1 to 80% by volume, 1 to 70% by volume, 1 to 60% by volume, 1 to 50% by volume, 1 to 40% by volume, 1 to 30% by volume, 1 to 20% by volume, 1 to 10% by volume, 10% by volume, 20% by volume, 30% by volume, 40% by volume, 50% by volume, 60% by volume, 70% by volume, 80% by volume, or 90% by volume of the second gas component based on the total volume of the gas component and the second gas component.

[0034] In some embodiments, the at least one container includes BF3, B2F4, at least one of the second gas components, or any combination thereof. In some embodiments, the at least one container includes a single container. In some embodiments, the single container includes BF3, B2F4, at least one of the second gas components, or any combination thereof. In some embodiments, the at least one container includes a first container and a second container. In some embodiments, the first container includes BF3, at least one of the second gas components, or any combination thereof. In some embodiments, the second container includes B2F4, at least one of the second gas components, or any combination thereof. In some embodiments, the at least one container does not include at least one of the second gas components. In some embodiments, the first container does not include at least one of the second gas components. In some embodiments, the second container does not include at least one of the second gas components.

[0035] As used herein, the term "boron ion" refers to a substance comprising at least one boron ion. For example, in some embodiments, the boron ion includes B... + BF2 + At least one of them or any combination thereof.

[0036] In some embodiments, when the gas component is supplied from the at least one container to the arc chamber for implantation into the substrate, the beam current of boron ions generated from the gas component is greater than the beam current of boron ions generated from the control gas component. In some embodiments, when the gas component is supplied from the at least one container to the arc chamber for implantation into the substrate, the beam current of boron ions generated from the gas component is at least 1%, at least 5%, at least 10%, at least 15%, at least 20%, at least 25%, at least 30%, at least 35%, at least 40%, at least 45%, at least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75%, at least 80%, at least 85%, at least 90%, or at least 95% greater than the beam current of boron ions generated from the control gas component. In some embodiments, when the gas component is supplied from the at least one container to the arc chamber for implantation into the substrate, the beam current of boron ions generated from the gas component is 1% to 99%, 1% to 90%, 1% to 80%, 1% to 70%, 1% to 60%, 1% to 50%, 1% to 40%, 1% to 30%, 1% to 20%, 1% to 10%, 1% to 9%, 1% to 8%, 1% to 1% of the boron ions generated from the control gas component. Up to 7%, 1% to 6%, 1% to 5%, 1% to 4%, 1% to 3%, 1% to 2%, 2% to 10%, 3% to 10%, 4% to 10%, 5% to 10%, 6% to 10%, 7% to 10%, 8% to 10%, 9% to 10%, 10% to 99%, 20% to 99%, 30% to 99%, 40% to 99%, 50% to 99%, 60% to 99%, 70% to 99%, 80% to 99%, or 90% to 99%.

[0037] Figure 1 A schematic diagram of an ion implantation system 100 according to some embodiments is shown. Figure 1 As shown, the ion implantation system 100 includes an arc chamber 150 in fluid communication with at least one container 102. In some embodiments, at least one container 102 is included in an assembly, such as (e.g., but not limited to) a gas supply assembly, configured to store and / or supply gas components to the arc chamber 150. As shown, the ion implantation system 100 also includes an ion implantation chamber 101 (e.g., a target chamber).

[0038] The assembly includes the at least one container, which may comprise a single container or multiple containers. In some embodiments, the at least one container includes a gaseous component. For example, in some embodiments, the at least one container includes BF3. In some embodiments, the at least one container includes B2F4. In some embodiments, the at least one container includes at least one of the second gaseous components. For example, in some embodiments, the at least one container includes hydrogen. In some embodiments, the at least one container includes a hydride gas. In some embodiments, the at least one container includes an inert gas. In some embodiments, the at least one container includes an ionizable gas. In some embodiments, the at least one container includes the diluent gas. In some embodiments, the at least one container includes a carrier gas. In some embodiments, the at least one container includes a common gas.

[0039] In some embodiments, the at least one container comprises a single container. In some embodiments, the single container comprises a gaseous component. For example, in some embodiments, the single container comprises BF3. In some embodiments, the single container comprises B2F4. In some embodiments, the single container comprises at least one of a second gaseous component. For example, in some embodiments, the single container comprises hydrogen. In some embodiments, the single container comprises a hydride gas. In some embodiments, the single container comprises an inert gas. In some embodiments, the single container comprises an ionizable gas. In some embodiments, the single container comprises a diluent gas. In some embodiments, the single container comprises a carrier gas. In some embodiments, the single container comprises a common gas. In some embodiments, the single container does not include at least one or any combination of the hydrogen, the hydride gas, the inert gas, the ionizable gas, the diluent gas, the carrier gas, the common gas. For example, in some embodiments, at least one additional container is provided, wherein the at least one additional container comprises at least one or any combination of the hydrogen, the hydride gas, the inert gas, the ionizable gas, the diluent gas, the carrier gas, the common gas.

[0040] In some embodiments, the at least one container includes multiple containers. In some embodiments, the multiple containers include at least a first container and a second container, wherein BF3 and B2F4 are in different containers.

[0041] In some embodiments, the first container comprises BF3. In some embodiments, the first container comprises at least one of the second gas components. For example, in some embodiments, the first container comprises hydrogen. In some embodiments, the first container comprises a hydride gas. In some embodiments, the first container comprises an inert gas. In some embodiments, the first container comprises an ionizable gas. In some embodiments, the first container comprises a diluent gas. In some embodiments, the first container comprises a carrier gas. In some embodiments, the first container comprises a common gas. In some embodiments, the first container does not include at least one or any combination thereof of the hydrogen, the hydride gas, the inert gas, the ionizable gas, the diluent gas, the carrier gas, and the common gas.

[0042] In some embodiments, the second container comprises B2F4. In some embodiments, the second container comprises at least one of the second gas components. For example, in some embodiments, the second container comprises hydrogen. In some embodiments, the second container comprises a hydride gas. In some embodiments, the second container comprises an inert gas. In some embodiments, the second container comprises an ionizable gas. In some embodiments, the second container comprises a diluent gas. In some embodiments, the second container comprises a carrier gas. In some embodiments, the second container comprises a common gas. In some embodiments, the second container does not include at least one or any combination of the hydrogen, the hydride gas, the inert gas, the ionizable gas, the diluent gas, the carrier gas, and the common gas.

[0043] In some embodiments, the plurality of containers further includes at least one additional container. In some embodiments, the at least one additional container includes at least one of the second gas components. For example, in some embodiments, the at least one additional container includes at least one of the hydrogen, the hydride gas, the inert gas, the ionizable gas, the diluent gas, the carrier gas, the common gas, or any combination thereof. In some embodiments, the at least one additional container includes the second gas component not present in the first container and / or the second container. In some embodiments, the at least one additional container includes at least one second gas component present in the first container and / or the second container.

[0044] When the assembly comprises multiple containers, the assembly may include components for regulating the dispensing or dispensing of gas from the multiple containers such that the gas is present in the arc chamber 150 at a desired concentration (e.g., volume percentage, partial pressure, etc.). Non-limiting examples of the components include (e.g., but not limited to) at least one of regulators, valves, controls, processors, memories, sensors, flow controllers, or any combination thereof. It should be understood that the assembly may include additional components without departing from the scope of this disclosure.

[0045] Although various exemplary embodiments have been disclosed above and elsewhere herein, it should be understood that any or more of the aforementioned gas components (i.e., gas components, second gas components, BF3, B2F4, hydrogen, hydride gases, inert gases, ionizable gases, diluent gases, carrier gases, common gases, or any combination thereof) may be combined or not combined in a single container or multiple containers without departing from the scope of this disclosure. It will be further understood that any or more of the combinations disclosed herein may be used in system 100 without departing from the scope of this disclosure. For simplicity, various features, embodiments, and / or combinations will not be repeated herein.

[0046] In some embodiments, at least one container 102 is configured to deliver gas below atmospheric pressure via one or more pressure regulators. In some embodiments, gas is delivered below atmospheric pressure using an adsorbent.

[0047] In some embodiments, a device configured to generate hydrogen via an electrochemical cell is fluidly connected to the ion implantation system 100.

[0048] In some embodiments, the arc chamber 150 includes an arc chamber wall having a surface facing the internal plasma. One or more arc chamber liners may be present, comprising all or part of the internal plasma-facing surface of the arc chamber 150 wall.

[0049] At least one container 102 may be of the type containing an adsorbent medium, wherein at least one of the gas components and / or a second gas component is physically adsorbed onto the adsorbent medium to store the gas, and is configured to desorb from the adsorbent medium under application conditions to be discharged from at least one container 102. The adsorbent medium may be a solid-phase carbon adsorbent material. In some embodiments, the adsorbent medium includes at least one or any combination of porous organic polymers (POP), zeolites, zeolite imidazolium ester frameworks (ZIF), siliceous rocks, metal-organic frameworks (MOFs). Further non-limiting examples of adsorbent materials are described in U.S. Patent Application Publication No. 2023 / 0079446 entitled “Composite Adsorbent-Containing Bodies and Related Methods,” the entire contents of which are incorporated herein by reference. Adsorbent-based containers of this type are available from Entegris, Inc. (Danbury, Connecticut, USA). Alternatively, the container may be an internally pressure-regulated type containing one or more pressure regulators within its internal volume. Such pressure-regulated containers are available from Entegris (Danbury, Connecticut, USA). As a further alternative, the container may contain, for example, a dopant source material that volatilizes upon heating the container and / or its contents to produce a gas as an evaporation or sublimation product.

[0050] At least one container 102 may include a cylindrical container wall 104 that encloses an internal volume, the internal volume holding at least one of the gas components and / or the second gas component in an adsorbed state, a free gas state, or a liquefied gas state, or any combination thereof.

[0051] At least one container 102 may include a valve head 108 coupled in gas flow communication via a line 117 for dispensing gas. A pressure sensor 110 may be housed in the line 117 together with a mass flow controller 114; other optional monitoring and sensing components may be coupled to the line and interface with control components (e.g., actuators, feedback and computer control systems, periodic timers, etc.).

[0052] The ion implantation chamber 101 may contain an ion source 116 for receiving at least one of the gas components and / or the second gas component dispensed from line 117 and for generating an ion beam 105. The ion beam 105 may pass through a quality analyzer unit 122, which selects desired ions and rejects unselected ions.

[0053] Selected ions can pass through an accelerating electrode array 124 and then through a deflecting electrode 126. The resulting focused ion beam can then strike a substrate 128 mounted on a rotatable support 130 mounted on a mandrel 132. The ion beam can be used to dope the substrate as needed to form a doped structure.

[0054] The response section of the ion implantation chamber 101 can be vented via pumps 120, 142 and 146 through lines 118, 140 and 144 respectively.

[0055] Figure 2 This is a flowchart of a method 200 for ion implantation according to some embodiments. For example... Figure 2 As shown herein, a method 200 for ion implantation may include one or more of the following steps: flowing a gas component from at least one container 202 into an arc chamber of an ion implantation apparatus; generating boron ions 204 from at least the gas component in the arc chamber of the ion implantation apparatus; and flowing the boron ions from the arc chamber 206 into a target chamber for implantation into a substrate. The method 200 for ion implantation may be implemented using any or more of the assemblies disclosed herein, the ion implantation systems disclosed herein, etc. For simplicity, the assemblies and / or ion implantation systems will not be repeated here.

[0056] In step 202, the method 200 for ion implantation includes causing a gaseous component to flow from the at least one container into the arc chamber of the ion implantation device.

[0057] In some embodiments, the flow includes flowing a gas component and / or a second gas component from a single container. In some embodiments, the flow includes flowing the gas component and / or the second gas component from multiple containers. In some embodiments, the gas component and / or the second gas component flows from different containers. In some embodiments, at least one of the gas components and at least one of the second gas components flows from the same container. In some embodiments, at least one of the gas components and at least one of the second gas components flows from different containers. In some embodiments, the gas components flow from the same container. In some embodiments, the gas components flow from different containers. In some embodiments, the second gas component flows from the same container. In some embodiments, the second gas component flows from different containers. In some embodiments, the flow includes dispensing gas from the at least one container. In some embodiments, the flow includes supplying gas from the at least one container. In some embodiments, the flow includes actuating a valve to flow gas from the at least one container. In some embodiments, the flow includes pumping gas from the at least one container. In some embodiments, the flow includes flowing BF3 from a first container into the arc chamber of the ion implantation device; and flowing B2F4 from a second container into the arc chamber of the ion implantation device. In some embodiments, the flow includes flowing at least one of hydrogen, a hydride gas, an inert gas, or any combination thereof into the arc chamber of the ion implantation device.

[0058] In some embodiments, the flow is carried out at a flow rate of 0.1 sccm to 10 sccm or any range or subrange between 0.1 sccm and 10 sccm. In some embodiments, the flow rate is 0.1 sccm to 9.5 sccm, 0.1 sccm to 9 sccm, 0.1 sccm to 8.5 sccm, 0.1 sccm to 8 sccm, 0.1 sccm to 7.5 sccm, 0.1 sccm to 7 sccm, 0.1 sccm to 6.5 sccm, 0.1 sccm to 6 sccm, 0.1 sccm to 5.5 sccm, 0.1 sccm to 5 sccm, 0.1 sccm to 4.5 sccm, 0.1 sccm to 4 sccm, 0.1 sccm to 3.5 sccm, 0.1 sccm to 3 sccm, 0.1 sccm to 2.5 sccm, 0.1 sccm to 2 sccm, 0.1 sccm to 1.5 sccm, 0.1 sccm to 1 sccm, 0.1 The flow rates are 0.5 sccm to 10 sccm, 1 sccm to 10 sccm, 1.5 sccm to 10 sccm, 2 sccm to 10 sccm, 2.5 sccm to 10 sccm, 3 sccm to 10 sccm, 3.5 sccm to 10 sccm, 4 sccm to 10 sccm, 4.5 sccm to 10 sccm, 5 sccm to 10 sccm, 5.5 sccm to 10 sccm, 6 sccm to 10 sccm, 6.5 sccm to 10 sccm, 7 sccm to 10 sccm, 7.5 sccm to 10 sccm, 8 sccm to 10 sccm, 8.5 sccm to 10 sccm, 9 sccm to 10 sccm, or 9.5 sccm to 10 sccm.

[0059] In step 204, the method 200 for ion implantation includes generating ions from at least the gas component in the arc chamber (e.g., ion source) of the ion implantation device.

[0060] In some embodiments, the generation includes generating ions from at least the gas component in the arc chamber of the ion implantation device. In some embodiments, the generation includes ionizing at least one of the gas component, the second gas component, or any combination thereof. In some embodiments, the generation includes, in some implementations, exposing the gas component, the second gas component, or any combination thereof to electromagnetic radiation. In some embodiments, the electromagnetic radiation includes at least one of radio frequency radiation, microwave radiation, or any combination thereof. In some embodiments, the generation includes colliding the gas component, the second gas component, or any combination thereof with particles. In some embodiments, the generation includes bombarding the gas component, the second gas component, or any combination thereof with particles.

[0061] In step 206, the method 200 for ion implantation includes causing the ions to flow from the arc chamber to the target chamber for implantation into the substrate.

[0062] In some embodiments, the flow includes flowing the ions in the beam from the arc chamber to the target chamber for implantation into a substrate. In some embodiments, the flow includes accelerating the ions to an energy sufficient for implantation into the substrate. In some embodiments, the flow includes extracting boron ions or boron-containing ions from the ions to bombard the substrate. In some embodiments, the flow includes selecting boron ions and / or boron-containing ions from the ions for implantation into the substrate. In some embodiments, the flow includes flowing the ions through an electric field. In some embodiments, the flow includes flowing the ions through a mass analyzer. In some embodiments, the flow includes ejecting the ions into the target chamber for implantation into the substrate.

[0063] It should be understood that any or more of the embodiments disclosed herein may be used alone or in combination without departing from the scope of this disclosure.

[0064] Example 1

[0065] Measuring the B of a BF3 / B2F4 gas mixture (sample A) under varying gas flow rates. + The beam current was measured and compared with a control (Control A). Control A consisted of BF3 gas but no B2F4. Sample A consisted of a gas mixture containing 15% by volume of B2F4, the remainder of which consisted of BF3. Unless otherwise specified herein, volume percentages are based on the total volume of the gas mixture. Sample A and Control A were measured under the same conditions, referred to herein as Condition 1. Figure 3 B is the change in total gas flow rate (sccm) between control A and sample A. + A graphical view of the beam current. Figure 4This is a graphical view of the beam spectra of comparison A and sample A. For example... Figure 3 As shown in the figure, when the total gas flow rate increases from 3.1 sccm to 3.3 sccm, the B of sample A... + The beam current is significantly greater than that of control A in B. + Beam current. Furthermore, the mixture of BF3 and B2F4 in sample A showed a significant reduction in W. + Spiral peak (illustration, dashed line), such as Figure 4 As shown in the image.

[0066] Example 2

[0067] Measurement of B in a BF3 / B2F4 gas mixture (sample B) under varying gas flow rates. + The beam current was measured and compared with a control (Control B). Control B consisted of BF3 gas but no B2F4. Sample B consisted of a gaseous mixture of 15% by volume of B2F4, the remainder of which consisted of BF3. Sample B and Control B were measured under the same conditions, referred to herein as Condition 2. Figure 5 The change in total gas flow rate (sccm) between control B and sample B. + A graphical view of the beam current. (e.g.) Figure 5 As shown in the figure, sample B's B + The beam current is significantly greater than that of control B. + The beam current increases because the total gas flow rate increases to over 3.5 sccm.

[0068] Example 3

[0069] BF2 of sample C was measured under varying gas flow rates. + The beam current was measured and compared with control C. The measurement conditions were the same as in Example 1. Figure 6 The change in total gas flow rate (sccm) between control C and sample C is BF2. + A graphical view of the beam current. Figure 7 This is a graphical view of the beam spectra of comparison C and sample C. For example... Figure 6 As shown in the figure, for all total gas flow rates, the BF2 of sample C + The beam current is significantly greater than that of control C (BF2). + Beam current. Furthermore, the mixture of BF3 and B2F4 in sample C showed a significant reduction in W. + Spiral peak (illustration, dashed line), such as Figure 7 As shown in the image.

[0070] Example 4

[0071] BF2 of sample D was measured under varying gas flow rates. +The beam current was measured and compared with control D. The measurement conditions were the same as in Example 2. Figure 8 The change in total gas flow rate (sccm) between control D and sample D is BF2. + A graphical view of the beam current. Figure 9 This is a graphical view of the beam spectra of comparison D and sample D. For example... Figure 8 As shown in the figure, for all total gas flow rates, the BF2 of sample D + The beam current is significantly greater than that of control D (BF2). + Beam current. Furthermore, the mixture of BF3 and B2F4 in sample D showed a significant reduction in W. + Spiral peak (illustration, dashed line), such as Figure 9 As shown in the image.

[0072] Example 5

[0073] Figure 10 It is a gas mixture with varying B2F4 concentration according to some embodiments. + Graphical view of beam current. At 0% volume of B2F4, the gas mixture comprises 100% BF3. (Example:) Figure 10 As shown in the figure, across all tested concentration ranges (containing 0 vol% to 50 vol% B2F4), as B2F4 was added to the gas mixture, B + The beam current unexpectedly increased.

[0074] aspect

[0075] The following describes various aspects. It should be understood that any or more of the features described in the following aspects may be combined with any or more other aspects.

[0076] Aspect 1. An assembly comprising:

[0077] At least one container configured to be fluidly coupled to the arc chamber of the ion implantation device,

[0078] The at least one container comprises a gaseous component.

[0079] The gaseous components include BF3 and B2F4;

[0080] When the gas component is supplied from the at least one container to the arc chamber for implantation into the substrate, the beam current of boron ions generated from the gas component is greater than the beam current of boron ions generated from the control gas component.

[0081] Aspect 2. The assembly according to aspect 1, wherein the at least one container comprises:

[0082] A first container, comprising the BF3; and

[0083] The second container includes the B2F4.

[0084] Aspect 3. The assembly according to any one or more of aspects 1 to 2, wherein the at least one container is a single container comprising the BF3 and the B2F4.

[0085] Aspect 4. The assembly according to aspect 3, wherein the single container comprises:

[0086] The B2F4 is based on 1% to 80% of the total volume of the gas components.

[0087] Aspect 5. The assembly according to aspect 3, wherein the single container comprises:

[0088] The B2F4 is based on 2% to 50% of the total volume of the gas components.

[0089] Aspect 6. The assembly according to aspect 3, wherein the single container comprises:

[0090] The B2F4 is based on 5% to 20% of the total volume of the gas components.

[0091] Aspect 7. The combination according to any one or more of aspects 1 to 6, wherein the at least one container further comprises at least one of hydrogen, hydride gas, inert gas, or any combination thereof.

[0092] Aspect 8. The assembly according to aspect 7, wherein the hydride gas comprises a compound with the following chemical formula:

[0093] A x H y ,

[0094] in:

[0095] A is an element other than hydrogen;

[0096] x is from 1 to 8; and

[0097] y is from 1 to 8.

[0098] Aspect 9. The assembly according to aspect 7, wherein the hydride gas comprises at least one of PH3, AsH3, B2H6, SiH4, GeH4, NH3, or any combination thereof.

[0099] Aspect 10. The assembly according to aspect 7, wherein the inert gas comprises at least one of nitrogen, hydrogen, neon, argon, krypton, xenon, or any combination thereof.

[0100] Aspect 11. The combination according to any one or more of aspects 1 to 10, wherein at least one of the BF3, the B2F4, or any combination thereof comprises isotopically enriched boron.

[0101] Aspect 12. A system for ion implantation, comprising:

[0102] An assembly, the fluid of which includes at least one container fluidly coupled to the arc chamber of an ion implantation device;

[0103] The at least one container mentioned above includes a gaseous component;

[0104] The gaseous components include BF3 and B2F4;

[0105] When the gas component is supplied from the at least one container to the arc chamber for implantation into the substrate, the beam current of boron ions generated from the gas component is greater than the beam current of boron ions generated from the control gas component.

[0106] Aspect 13. The system according to aspect 12, wherein the at least one container comprises:

[0107] A first container, comprising the BF3; and

[0108] The second container includes the B2F4.

[0109] Aspect 14. The system according to any one or more of aspects 12 to 13, wherein the at least one container is a single container comprising the BF3 and the B2F4.

[0110] Aspect 15. The system according to any one or more of aspects 12 to 14, wherein the at least one container further comprises at least one of hydrogen, hydride gas, inert gas, or any combination thereof.

[0111] Aspect 16. The system according to any one or more of aspects 12 to 15, wherein at least one of the BF3, the B2F4, or any combination thereof comprises isotopically enriched boron.

[0112] Aspect 17. A method comprising:

[0113] At least one gaseous component is allowed to flow from at least one container into the arc chamber of the ion implantation device.

[0114] The gaseous components include BF3 and B2F4;

[0115] Ions are generated from at least the gas components in the arc chamber of the ion implantation device; and

[0116] The ions in the beam are allowed to flow from the arc chamber to the target chamber to be implanted into the substrate.

[0117] Aspect 18. The method according to aspect 17, wherein flowing the gas component includes flowing the gas component from a single container comprising the gas component.

[0118] Aspect 19. The method according to any one or more of Aspects 17 to 18, wherein causing the gas component to flow comprises:

[0119] The BF3 flows from the first container into the arc chamber of the ion implantation device; and

[0120] The B2F4 is allowed to flow from the second container into the arc chamber of the ion implantation device.

[0121] Aspect 20. The method according to aspect 19, further comprising:

[0122] At least one of hydrogen, hydride gas, inert gas, or any combination thereof is allowed to flow into the arc chamber of the ion implantation device.

[0123] It should be understood that detailed changes may be made without departing from the scope of this disclosure, particularly in terms of the shape, size, and arrangement of the construction materials and components used. This specification and the described embodiments are examples, wherein the true scope and spirit of this disclosure are indicated by the appended claims.

Claims

1. An assembly comprising: At least one container configured to be fluidly coupled to the arc chamber of the ion implantation device, The at least one container comprises a gaseous component. The gaseous components include BF3 and B2F4; When the gas component is supplied from the at least one container to the arc chamber for implantation into the substrate, the beam current of boron ions generated from the gas component is greater than the beam current of boron ions generated from the control gas component.

2. The assembly of claim 1, wherein the at least one container comprises: A first container, comprising the BF3; and The second container includes the B2F4.

3. The assembly of claim 1, wherein the at least one container is a single container comprising the BF3 and the B2F4.

4. The assembly of claim 3, wherein the single container comprises: The B2F4 is based on 1% to 80% of the total volume of the gas components.

5. The assembly of claim 3, wherein the single container comprises: The B2F4 is based on 2% to 50% of the total volume of the gas components.

6. The assembly of claim 3, wherein the individual container comprises: The B2F4 is based on 5% to 20% of the total volume of the gas components.

7. The assembly of claim 1, wherein the at least one container further comprises at least one of hydrogen, hydride gas, inert gas, or any combination thereof.

8. The assembly according to claim 7, wherein the hydride gas comprises a compound with the following chemical formula: A x H y , in: A is an element other than hydrogen; x is from 1 to 8; and y is from 1 to 8.

9. The assembly according to claim 7, wherein the hydride gas comprises at least one of PH3, AsH3, B2H6, SiH4, GeH4, NH3, or any combination thereof.

10. The assembly of claim 7, wherein the inert gas comprises at least one of nitrogen, hydrogen, neon, argon, krypton, xenon, or any combination thereof.

11. The assembly of claim 1, wherein at least one of the BF3, the B2F4, or any combination thereof comprises isotopically enriched boron.

12. A system for ion implantation, comprising: An assembly, the fluid of which includes at least one container fluidly coupled to the arc chamber of an ion implantation device; The at least one container mentioned above includes a gaseous component; The gaseous components include BF3 and B2F4; When the gas component is supplied from the at least one container to the arc chamber for implantation into the substrate, the beam current of boron ions generated from the gas component is greater than the beam current of boron ions generated from the control gas component.

13. The system of claim 12, wherein the at least one container comprises: A first container, comprising the BF3; and The second container includes the B2F4.

14. The system of claim 12, wherein the at least one container is a single container comprising the BF3 and the B2F4.

15. The system of claim 12, wherein the at least one container further comprises at least one of hydrogen, hydride gas, inert gas, or any combination thereof.

16. The system of claim 12, wherein at least one of the BF3, the B2F4, or any combination thereof comprises isotopically enriched boron.

17. A method comprising: At least one gaseous component is allowed to flow from at least one container into the arc chamber of the ion implantation device. The gaseous components include BF3 and B2F4; Ions are generated from at least the gas components in the arc chamber of the ion implantation device; and The ions in the beam are allowed to flow from the arc chamber to the target chamber to be implanted into the substrate.

18. The method of claim 17, wherein flowing the gas component comprises flowing the gas component from a single container comprising the gas component.

19. The method of claim 17, wherein causing the gas component to flow comprises: The BF3 is allowed to flow from the first container into the arc chamber of the ion implantation device; and The B2F4 is allowed to flow from the second container into the arc chamber of the ion implantation device.

20. The method of claim 19, further comprising: At least one of hydrogen, hydride gas, inert gas, or any combination thereof is allowed to flow into the arc chamber of the ion implantation device.

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