Inspection system and temperature control method for an inspection system

Abstract

Provided is an inspection system that inspects a substrate while controlling temperature and a temperature control method for the inspection system. An inspection system that inspects a substrate while controlling temperature includes a substrate holding section that holds the substrate, an inspection section that supplies inspection power to an electrode section of the substrate, a substrate holding section detection section that detects a detection value related to the temperature of the substrate holding section, a holding section temperature adjustment mechanism that adjusts the temperature of the substrate holding section, an inspection section temperature detection section that detects the temperature of the inspection section, and a control section, wherein the substrate holding section detection section has a film-shaped pattern parallel to the substrate, and the control section performs inspection of the substrate while controlling the temperature of the substrate holding section by the holding section temperature adjustment mechanism.

Description

Technical Field

[0001] This disclosure relates to an inspection system and a method for controlling the temperature of the inspection system. Background Technology

[0002] Patent Document 1 discloses a power conversion device capable of detecting the voltage between the source and drain terminals of a power transistor during its turn-on period and estimating the junction temperature of the power transistor with high accuracy.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-122107 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] In one aspect, this disclosure provides an inspection system for inspecting a substrate while performing temperature control, and a method for temperature control of the inspection system.

[0008] Solution for solving the problem

[0009] To address the aforementioned problems, an inspection system is provided that inspects a substrate while controlling its temperature. The inspection system includes: a substrate holding section that holds the substrate; an inspection section that supplies inspection power to electrode portions of the substrate; a substrate holding section detection section that detects a value related to the temperature of the substrate holding section; a holding section temperature adjustment mechanism that adjusts the temperature of the substrate holding section; an inspection section temperature detection section that detects the temperature of the inspection section; and a control section, wherein the substrate holding section detection section has a film pattern parallel to the substrate, and the control section performs the substrate inspection while controlling the temperature of the substrate holding section via the holding section temperature adjustment mechanism.

[0010] Invention Effects

[0011] According to one aspect, an inspection system and a temperature control method for the inspection system can be provided that inspects a substrate while performing appropriate temperature control. Attached Figure Description

[0012] Figure 1 This is an example of a three-dimensional view of an inspection system.

[0013] Figure 2 This is an example of checking the system's structure diagram.

[0014] Figure 3 This is an example of a top view that schematically shows the structure of the substrate.

[0015] Figure 4A This is an example of a cross-sectional view of the structure of the explanatory table.

[0016] Figure 4B This is an example of a cross-sectional view of the structure of the explanatory table.

[0017] Figure 5A This is an example of a cross-sectional view of the structure of the explanatory table.

[0018] Figure 5B This is an example of a cross-sectional view of the structure of the explanatory table.

[0019] Figure 6A This is a top view showing an example of the configuration of the temperature detection unit.

[0020] Figure 6B This is a top view showing an example of the configuration of the temperature detection unit.

[0021] Figure 7A This is an example of a cross-sectional schematic diagram showing the configuration of a film-like pattern disposed within an insulating film.

[0022] Figure 7B This is an example of a cross-sectional schematic diagram showing the configuration of a film-like pattern disposed within an insulating film.

[0023] Figure 7C This is an example of a cross-sectional schematic diagram showing the configuration of a film-like pattern disposed within an insulating film.

[0024] Figure 8 This is an example of an enlarged view of an inspection system that magnifies the vicinity of electronic devices.

[0025] Figure 9 This is an example of a diagram illustrating a heat flow model.

[0026] Figure 10 This is an example of a control chart illustrating the junction temperature control in the reference example.

[0027] Figure 11 This is an example of a control diagram illustrating the junction temperature control in the first embodiment.

[0028] Figure 12 This is an example of a control diagram illustrating the junction temperature control in the second embodiment. Detailed Implementation

[0029] The various exemplary embodiments will now be described in detail with reference to the accompanying drawings. Furthermore, in each drawing, the same or equivalent parts are labeled with the same reference numerals.

[0030] use Figure 1 Inspection system 1, which is an example of the inspection system involved in this embodiment, will be described. Figure 1 This is an example of examining a 3D view of System 1. Figure 2 This is an example of examining the structure diagram of System 1. Furthermore, in Figure 2 In the middle, a partial cross-sectional view is provided, which roughly shows the structural elements built into the inspection system 1.

[0031] In semiconductor manufacturing processes, a large number of electronic devices D (described later) with prescribed circuit patterns are formed on a substrate W such as a semiconductor wafer. Figure 3 Also known as a bare die. The resulting electronic device D is inspected for electrical characteristics, etc., and sorted into good and defective products. The inspection of the electronic device D is performed, for example, using an inspection system 1 on the substrate W before each electronic device D is separated.

[0032] The inspection system 1 performs temperature control while inspecting multiple electronic devices D (described later) formed on the substrate W. Figure 3 The electrical characteristics of the electronic device D are checked. That is, the inspection system 1 supplies inspection power to the electronic device D when the electronic device D is at or above the specified inspection temperature, and performs inspections on its electrical characteristics, etc.

[0033] The inspection system 1 includes a containment chamber 2, a loader 3, and a tester 4.

[0034] The receiving chamber 2 has a housing 11 with an internal cavity. Inside the housing 11, the receiving chamber 2 has a stage (also called a "holding plate") 10 for holding the substrate W. The stage 10 has an adsorption and holding part (not shown) for adsorbing and holding the substrate W so that the relative position of the substrate W with respect to the stage 10 does not shift. In addition, the receiving chamber 2 is provided with a moving mechanism (not shown) inside the housing 11 for moving the stage 10 in the horizontal and vertical directions. By means of this moving mechanism, the relative position between the probe card 12 (described later) and the substrate W can be adjusted so that the desired electrode portion E (see the following description) on the surface of the substrate W is formed. Figure 3 ) and contact probe 12a of probe card 12.

[0035] The housing 2 contains a probe card 12 inside the housing 11. The probe card 12 is positioned above the stage 10, facing the stage 10. The probe card 12 has a plurality of needle-shaped probes 12a, each corresponding to an electrode pad or solder bump of an electronic device D on the same substrate W. The probe card 12 is connected to the tester 4 via an interface 13. During electrical characteristic checks, each probe 12a contacts the electrode E of the electronic device D on the substrate W, supplying power from the tester 4 to the electronic device D via the interface 13, and transmitting signals from the electronic device D to the tester 4 via the interface 13.

[0036] The loader 3 is equipped with a FOUP (Front Opening Unify Pod) as a transport container for housing the substrate W. Additionally, the loader 3 has a transport mechanism (not shown) for transporting the substrate W. The transport mechanism removes the substrate W housed in the FOUP and transports it to the stage 10 of the receiving chamber 2. Furthermore, the transport mechanism receives the substrate W from the stage 10 after the electrical characteristics inspection of the electronic device D has been completed and houses it in the FOUP.

[0037] The tester 4 has a test board (not shown) that reproduces a portion of the circuit structure of the motherboard on which the electronic device D is mounted. Furthermore, the test board of the tester 4 is connected to a tester computer 15 that determines the quality of the electronic device D based on signals received from it. In the tester 4, various motherboard circuit structures can be reproduced by changing the test board. Additionally, the probe card 12 has multiple probes 12a that contact multiple electrode portions E of the electronic device D. Furthermore, the tester 4 has multiple detection units for detecting the electrical characteristics of the electronic device D. Thus, the tester 4 detects multiple electrical characteristics of the electronic device D.

[0038] In addition, the inspection system 1 includes a user interface unit 16 for displaying information to the user and for providing user input instructions. The user interface unit 16 may consist of an input unit such as a touch panel or keyboard and a display unit such as a liquid crystal display.

[0039] In this way, the inspection system 1, as a substrate holding part for holding the substrate W, includes a stage 10. In addition, the inspection system 1, as an inspection part, includes a probe card 12 with a probe 12a, an interface 13, and a tester 4. The inspection part inspects the electronic device D by supplying inspection power to the electrode part E of the electronic device D provided on the substrate W to detect the electrical characteristics of the electronic device D.

[0040] Furthermore, the loader 3 has a temperature control unit 14. The temperature control unit 14 includes a power supply 25, a cooler 26, a power supply 55, and a control unit 90.

[0041] A heating unit 20 is provided on the platform 10 to heat the platform 10. A power supply 25 supplies power to the heating unit 20 provided on the platform 10. In addition, a refrigerant flow path 10a for the flow of a heat transfer medium (antifreeze, etc.) is formed inside the platform 10. A cooler 26 circulates the heat transfer medium, after temperature adjustment, to the refrigerant flow path 10a. Thus, the inspection system 1, as a temperature adjustment mechanism for adjusting the temperature of the holding part of the substrate, includes a heating unit 20, a power supply 25, a refrigerant flow path 10a, and a cooler 26. However, the structure of the temperature adjustment mechanism for the holding part is not limited to this.

[0042] Furthermore, the temperature adjustment mechanism for the holding section includes a temperature detection unit 30 (substrate holding section detection unit) that detects the temperature of the substrate holding section. The temperature detection unit 30 is provided on the stage 10 and detects the temperature Tchuck of the stage 10. The temperature Tchuck of the stage 10 detected by the temperature detection unit 30 is input to the control unit 90. While the temperature detection unit 30 is illustrated as a single unit, it is not limited to this; preferably, multiple temperature detection units 30 are provided on the stage 10 for each electronic device D that is powered and generates heat. Additionally, when switching the powered electronic device D, it is preferable to also switch the temperature detection unit 30 that detects the temperature Tchuck. Furthermore, it is preferable to detect the temperature Tchuck based on a model including multiple temperature detection units 30.

[0043] Additionally, a temperature regulating mechanism 50 for adjusting the temperature of the probe card 12 is provided in the tester 4. The temperature regulating mechanism 50 may include a heater (not shown) for heating the probe card 12, a cooling fan (not shown) for air cooling the probe card 12, etc. A power supply 55 supplies power to the temperature regulating mechanism 50 provided in the tester 4. Thus, the inspection system 1, as an inspection unit temperature regulating mechanism for adjusting the temperature of the inspection unit, includes the temperature regulating mechanism 50. However, the structure of the inspection unit temperature regulating mechanism is not limited to this. The inspection unit temperature regulating mechanism may also include a structure that adjusts the temperature of the inspection unit through liquid cooling.

[0044] In addition, the inspection unit temperature adjustment mechanism includes a temperature detection unit 60 (inspection unit temperature detection unit) for detecting the temperature of the inspection unit. The temperature detection unit 60 is installed on the probe card 12 and detects the temperature Tprob of the probe card 12. The temperature Tprob of the probe card 12 detected by the temperature detection unit 60 is input to the control unit 90. Furthermore, while the temperature detection unit 60 has been described as being installed on the probe card 12, it is not limited to this; it could be any temperature detection unit capable of detecting a temperature representative of the probe's temperature. For example, the temperature detection unit 60 could also be a temperature detection unit that detects the temperature of probe 12a. Furthermore, while the temperature detection unit 60 is illustrated as a single unit, it is not limited to this; preferably, multiple temperature detection units 60 are installed on the probe card 12 for each electrically powered and heated electronic device D. Additionally, when switching the electrically powered and heated electronic device D, it is preferable to also switch the temperature detection unit 60 that detects the temperature Tprob. Furthermore, it is preferable to detect the temperature Tprob based on a model including multiple temperature detection units 60.

[0045] Additionally, the tester 4 has a power detection unit 41, which detects the test power (current and voltage) supplied from the tester 4 to the electronic device D via the interface 13 and the probe card 12. The test power detected by the power detection unit 41 is input to the control unit 90.

[0046] The control unit 90 includes a holding section temperature control unit 91, an inspection section temperature control unit 92, and an analysis unit 93. The control unit 90 controls the holding section temperature adjustment mechanism and the inspection section temperature adjustment mechanism to make the junction temperature Tj (temperature of the substrate W) of the electronic device D the inspection temperature. Furthermore, the control unit 90 controls the holding section temperature adjustment mechanism and the inspection section temperature adjustment mechanism to ensure that the temperature difference between the substrate W and the probe card 12 is within a predetermined threshold.

[0047] The holding section temperature control unit 91 controls the holding section temperature adjustment mechanism to make the temperature Tchuck of the substrate holding section detected by the temperature detection unit 30 the target temperature. Furthermore, while the temperature detection unit 30 is shown as a single unit in the illustration, it is not limited to this; preferably, multiple temperature detection units 30 are provided on the stage 10 for each electronic device D that generates heat due to power supply. Additionally, when switching the electronic device D that generates heat due to power supply, it is preferable to also switch the temperature detection unit 30 that detects the temperature Tchuck. Furthermore, it is preferable to detect the temperature Tchuck based on a model including multiple temperature detection units 30. That is, the holding section temperature control unit 91 controls the heat generation of the heating unit 20 by controlling the power supply 25 to control the temperature Tchuck of the control unit 10. Additionally, the holding section temperature control unit 91 can also control the temperature of the heat transfer medium supplied by the cooler 26 to the refrigerant flow path 10a by controlling the cooler 26 to control the temperature Tchuck of the control unit 10.

[0048] The inspection unit temperature control unit 92 controls the inspection unit temperature adjustment mechanism so that the temperature Tprob detected by the temperature detection unit 60 becomes the target temperature. That is, the inspection unit temperature control unit 92 controls the temperature adjustment mechanism 50 by controlling the power supply 55 to control the temperature Tprob of the probe card 12. Furthermore, while the temperature detection unit 60 is illustrated as a single unit, it is not limited to this; preferably, multiple temperature detection units 60 are provided on the probe card 12 for each electrically powered device D that generates heat. Additionally, when switching the electrically powered device D, it is preferable to also switch the temperature detection unit 60 that detects the temperature Tprob. Furthermore, it is preferable to detect the temperature Tprob based on a model including multiple temperature detection units 60.

[0049] Analysis Unit 93 is based on the following. Figure 9 The heat flow model shown is used to estimate the junction temperature Tj (the temperature of the substrate W) of electronic device D. Furthermore, the control unit 90 adjusts the Chuck Heat Flux (holding disk heat flux) (see reference). Figure 9 The heat flux Ic described later is used to achieve the target temperature of temperature Tchuck (the target temperature of the holding section). Alternatively, the control unit 90 may have the following structure: adjusting the heat flux of the holding plate (see usage). Figure 9The heat flux Ic described later is used to achieve the target temperature of Tchuck (maintain the target temperature), and the Probe Heat Flux is adjusted (see reference for use). Figure 9 The heat flow (Ip) described later is used to achieve the target temperature (inspection section target temperature) of temperature Tprob. The holding section temperature control unit 91 controls the holding section temperature adjustment mechanism based on the holding section target temperature calculated by the analysis unit 93. In addition, the inspection section temperature control unit 92 controls the inspection section temperature adjustment mechanism based on the inspection section target temperature calculated by the analysis unit 93. Here, there are many solutions for the holding section target temperature and the inspection section target temperature calculated by the analysis unit 93. In addition, in practice, about 40% of the heat is lost from the electronic device D to the probe card 12. The heat absorbed from the electronic device D to the probe card 12 is a compromise relationship with the thermal expansion difference between the probe card 12 and the substrate W. The heat absorbed from the electronic device D to the probe card 12 is calculated as the heat absorbed when the probe 12a enters the bonding pad (electrode section E).

[0050] Next, use Figure 3 The substrate W inspected in the inspection system 1 described above will now be explained. Figure 3 This is a top view that roughly shows the structure of the substrate W.

[0051] On substrate W, etching and wiring processes are performed on the roughly circular silicon substrate, such as... Figure 3 As shown, multiple electronic devices D are formed on a surface at predetermined intervals. Electrode portions E are formed on the surface of the electronic device D, i.e., the substrate W, and these electrode portions E are electrically connected to the internal circuit elements of the electronic device D. Current can flow to the internal circuit elements of each electronic device D by applying a voltage to the electrode portions E.

[0052] Next, use Figures 4A to 5B Let's take an example of the structure of Taiwan 10 to illustrate this.

[0053] Figure 4A This is an example of a cross-sectional view used to illustrate the structure of platform 10. Figure 4A The platform 10 shown has a plate member 410. Additionally, a heating unit 20 (see reference) is used to heat the platform 10. Figure 2 It includes an LED 431 (as well as an LED substrate 432 and a control substrate 451). Additionally, it serves as a temperature detection unit 30 (see reference 351). Figure 2 ), with a membrane pattern 415.

[0054] The platform 10 has a plate component 410, a light-transmitting component 420, and shells 430 and 440.

[0055] The plate member 410 is a member for mounting the substrate W and is formed in a generally circular plate shape. Furthermore, the material of the plate member 410 is not limited and can be any of metal, ceramic, glass, etc. Additionally, the plate member 410 is a member that absorbs light irradiated from the LED 431 and is heated. The light-transmitting member 420 is a member (e.g., glass) that allows light irradiated from the LED 431 to pass through. The light-transmitting member 420 is disposed below the plate member 410. The lower surface of the plate member 410 is bonded or joined to the upper surface of the light-transmitting member 420.

[0056] A refrigerant flow path 411 is formed in the plate member 410 (equivalent to...). Figure 2 The refrigerant flow path 10a shown is supplied from the cooler 26 (see reference). Figure 2 The heat transfer medium supplied flows through. In addition, the refrigerant flow path 411 is illustrated as being formed by a recess formed on the lower surface of the plate member 410 and the upper surface of the light-transmitting member 420, but it is not limited to this. It may also be formed by a recess formed on the upper surface of the light-transmitting member 420 and the lower surface of the plate member 410, or it may be formed within the plate member 410 or within the light-transmitting member 420.

[0057] The housing 430 has an internal space disposed beneath the light-transmitting member 420. Multiple LEDs 431 (equivalent to...) are mounted within the internal space of the housing 430. Figure 2 The heating element 20 shown is an LED substrate 432. A cooling block 440 is disposed under the housing 430. The cooling block 440 has a refrigerant flow path 441 for the flow of heat transfer medium, and cools the LED substrate 432 on which the LED 431 is mounted.

[0058] The housing 450 has an internal space and is disposed below the cooling block 440. A control board 451 is disposed within the internal space of the housing 450. The control board 451 is powered by a power supply 25 (see reference). Figure 2 Power is supplied to the LED substrate 432 via a cable (not shown), controlling the lighting and extinguishing of the LEDs 431. Light radiated from the LEDs 431 passes through the light-transmitting member 420 and illuminates the plate member 410, heating it. Additionally, the control substrate 451 lights up a selected LED 431 from among the plurality of LEDs 431. Thus, a predetermined area (heating zone) of the plate member 410 can be selectively heated.

[0059] A membrane pattern 415 (equivalent to) is provided on the upper surface of the plate member 410. Figure 2 The temperature detection unit 30 and the insulating film 416 are shown.

[0060] The insulating film 416 is formed, for example, as Al2O3, Cr2O3, TiO2, Y2O3, YSZ, ZnO, ZrSiO4, MgAl2O4, Y2SiO5, Al6Si2O 13 A spray-deposited film of ceramics such as HfO2, Al2O3-TiO2, YF3, B4C, and AlN is formed. Furthermore, an insulating film 416 is formed on the film pattern 415. Preferably, the surface of the insulating film 416 (the surface on which the substrate W is mounted) is mirror-finished. This reduces the contact thermal resistance with the substrate W. Alternatively, the insulating film 416 may also be formed under the film pattern 415.

[0061] The film pattern 415 is a planar metallic thin film (thermostat) formed within the insulating film 416 and parallel to the substrate W placed on the substrate mounting surface of the stage 10, whose resistance value changes with temperature. Furthermore, the film pattern 415 can be formed by spraying or by pasting pre-processed film patterns 415 into a predetermined shape. The film pattern 415 is disposed across the entire mounting surface of the substrate W of the plate member 410 (see below). Figure 6A The film pattern 415 is connected to a first temperature detection controller (not shown) via wiring 415a. The first temperature detection controller uses, for example, a four-terminal resistance measurement method to detect the resistance value of the film pattern 415. Furthermore, the first temperature detection controller detects the temperature of the stage 10 based on the detected resistance value of the film pattern 415. In addition, the first temperature detection controller sends the detected temperature of the stage 10 to the control unit 90.

[0062] In addition, Figure 4A In the structure shown, and in relation to the one described later Figure 4B Compared to the structure shown, the use of a film pattern 415 as the temperature sensing unit 30 increases the design freedom of the refrigerant flow path 411 formed within the plate member 410. This allows for the design of the refrigerant flow path 411 to be configured with a complex structure (e.g., a three-dimensional structure) capable of high heat absorption.

[0063] Figure 4B This is another example of a cross-sectional view used to illustrate the structure of platform 10. Figure 4B The platform 10 shown has a plate member 410. Additionally, a heating unit 20 (see reference) is used to heat the platform 10. Figure 2 It includes an LED 431 (as well as an LED substrate 432 and a control substrate 451). Additionally, it serves as a temperature detection unit 30 (see reference 351). Figure 2 It has a membrane pattern 415 and multiple temperature sensors 418. The other structures are the same, and repeated descriptions are omitted.

[0064] A sensor tube 417 is provided within the plate member 410. A temperature sensor 418 is provided within the sensor tube 417. Multiple temperature sensors 418 are provided separately from each other in the direction of the mounting surface of the mounting substrate W of the plate member 410 (see description below). Figure 6B Temperature sensor 418 is a thermocouple or a resistive element whose resistance changes with temperature. Temperature sensor 418 is connected to a second temperature detection controller (not shown) via wiring 418a. The second temperature detection controller uses, for example, a four-terminal resistance measurement method to detect the resistance value of temperature sensor 418. Furthermore, the second temperature detection controller detects the temperature of stage 10 based on the detected resistance value of temperature sensor 418. Additionally, the second temperature detection controller sends the detected temperature of stage 10 to the control unit 90.

[0065] Figure 5A This is yet another example of a cross-sectional view used to illustrate the structure of platform 10. Figure 5A The platform 10 shown has a plate member 510 (and a water-cooling jacket 520). Additionally, a heating unit 20 (see reference) is used to heat the platform 10. Figure 2 It has a heater 535. Additionally, it includes a temperature detection unit 30 (see reference 30). Figure 2 ), with a membrane pattern 515.

[0066] Platform 10 has plate components 510, water cooling jacket 520, and shells 530 and 540.

[0067] The plate member 510 is a member for mounting the substrate W and is formed in a generally circular plate shape. Furthermore, the material of the plate member 510 is not limited and can be any of metal, ceramic, glass, etc. The lower surface of the plate member 510 is bonded or joined to the upper surface of the water-cooling jacket 520. The water-cooling jacket 520 has a refrigerant flow path 521 (equivalent to...). Figure 2 The refrigerant flow path 10a shown is supplied from the cooler 26 (see reference). Figure 2 The heat transfer medium supplied flows.

[0068] The housing 530 has an internal space and is located under the water cooling jacket 520.

[0069] Inside the housing 530, a heater 535 is disposed in such a way that it contacts the lower surface of the water-cooling jacket 520. Figure 2 Heating unit 20 is shown. Heater 535 is powered by power supply 25 (see reference). Figure 2 Power is supplied to heat the plate member 510 via the water-cooled jacket 520. Alternatively, the heater 535 may be a multi-channel heater, configured to selectively heat a specified range (heating zone) of the plate member 510.

[0070] A film-like pattern 515 (equivalent to) is provided on the upper surface of the plate member 510. Figure 2 The temperature detection unit 30 and the insulating film 516 are shown.

[0071] The insulating film 516 is formed, for example, Al2O3, Cr2O3, TiO2, Y2O3, YSZ, ZnO, ZrSiO4, MgAl2O4, Y2SiO5, Al6Si2O 13 A spray-deposited film of ceramics such as HfO2, Al2O3-TiO2, YF3, B4C, and AlN is formed. Furthermore, an insulating film 516 is formed on the film pattern 515. Preferably, the surface of the insulating film 516 (the surface on which the substrate W is mounted) is mirror-finished. This reduces the contact thermal resistance with the substrate W. Alternatively, the insulating film 516 may also be formed under the film pattern 515.

[0072] The film pattern 515 is a planar metallic thin film (thermostat) formed within the insulating film 516 and parallel to the substrate W placed on the substrate mounting surface of the stage 10, whose resistance value changes with temperature. Furthermore, the film pattern 415 can be formed by spraying or by pasting a pre-processed film pattern 415 into a predetermined shape. The film pattern 515 is formed over the entire mounting surface of the substrate W of the plate member 510 (see description below). Figure 6A The film pattern 515 is connected to a first temperature detection controller (not shown) via wiring 515a. The first temperature detection controller uses, for example, a four-terminal resistance measurement method to detect the resistance value of the film pattern 515. Furthermore, the first temperature detection controller detects the temperature of the stage 10 based on the detected resistance value of the film pattern 515. In addition, the first temperature detection controller sends the detected temperature of the stage 10 to the control unit 90.

[0073] Figure 5B This is yet another example of a cross-sectional view used to illustrate the structure of platform 10. Figure 5A The platform 10 shown has a plate member 510 (and a water-cooling jacket 520). Additionally, a heating unit 20 (see reference) is used to heat the platform 10. Figure 2 It has a heater 535. Additionally, it includes a temperature detection unit 30 (see reference 30). Figure 2 It has a membrane pattern 515 and multiple temperature sensors 518. The other structures are the same, and repeated descriptions are omitted.

[0074] A sensor tube 517 is provided within the plate member 510. A temperature sensor 518 is provided within the sensor tube 517. Multiple temperature sensors 518 are provided separately from each other in the direction of the mounting surface of the mounting substrate W of the plate member 410 (see description below). Figure 6BTemperature sensor 518 is a thermocouple or a resistive element whose resistance changes with temperature. Temperature sensor 518 is connected to a second temperature detection controller (not shown) via wiring 518a. The second temperature detection controller uses, for example, a four-terminal resistance measurement method to detect the resistance value of temperature sensor 518. Furthermore, the second temperature detection controller detects the temperature of stage 10 based on the detected resistance value of temperature sensor 518. Additionally, the second temperature detection controller sends the detected temperature of stage 10 to the control unit 90.

[0075] Figure 6A , 6B This is a top view showing an example of the configuration of the temperature detection unit 30 (film pattern 415, temperature sensor 418). Figure 6A This is a top view showing an example of the configuration of the membrane pattern 415. Figure 6B This is a top view showing an example of the configuration of temperature sensor 418. Additionally, in Figure 6A and Figure 6B In the image, regions P1 and P2 are used to show an example of the regions where electronic device D, which is the object of inspection, is configured.

[0076] Furthermore, the configuration of the membrane pattern 515 and Figure 6A The configuration of the film pattern 415 shown is the same, and the configuration of the temperature sensor 518 is the same. Figure 6B The temperature sensor 418 shown has the same configuration, so repeated descriptions are omitted.

[0077] like Figure 6A As shown, the film pattern 415 is integrally disposed with the entire surface of the substrate mounting surface of the platform 10 (plate member 410). Furthermore, the film pattern 415 is formed in the impression of a serpentine stroke within the surface. Additionally, the film pattern 415 is formed as a bent strip, covering all of the multiple regions (e.g., regions P1, P2) of the electronic device D. Furthermore, the film pattern 415 has one end connecting to the wiring 415a and another end connecting to other wirings 415a, and is disposed across the multiple regions of the electronic device D as it moves from one end to the other. Furthermore, the length (area) of the film pattern 415 disposed in each region (e.g., regions P1, P2) of the electronic device D is preferably equal to each other.

[0078] In addition, when using the four-terminal resistance measurement method to detect the resistance value of the film pattern 415, four wirings 415a are connected for one film pattern 415.

[0079] In addition, Figure 6A In the example, a membrane pattern 415 is formed in the surface of the platform 10 (plate member 410), but it is not limited to this.

[0080] Figures 7A-7C This is an example of a cross-sectional schematic diagram showing the configuration of the film pattern 415 disposed within the insulating film 416.

[0081] exist Figure 4A , Figure 4B In the example shown, a film-like pattern 415 is formed on the upper surface of the plate member 410. In contrast, as... Figure 7A As shown, the film pattern 415 can also be disposed inside the insulating film 416.

[0082] In addition, such as Figure 7B as well as Figure 7C As shown, the film pattern 415 can also be provided in multiple layers inside the insulating film 416. Additionally, as... Figure 7B As shown, the multi-layered film patterns 415 can be connected in parallel. Additionally, as... Figure 7C As shown, the multilayer film pattern 415 can also be connected in series. This allows for adjustment of the resistance value of the film pattern 415.

[0083] In addition, the membrane pattern 415 can be evenly distributed on the upper surface of the platform 10 (plate member 410), or it can have multiple membrane patterns.

[0084] In this case, the multiple film patterns can be configured to cover all of the multiple regions (e.g., regions P1, P2) of the configured electronic device D. Alternatively, the multiple regions (e.g., regions P1, P2) of the configured electronic device D can be divided into several groups, and a film pattern can be configured for each group, with the film pattern configured to cover all of the multiple regions within that group.

[0085] In addition, the membrane pattern 415 is not limited to Figure 6A The structure shown can also have a shape that branches in the middle.

[0086] like Figure 6B As shown, multiple temperature sensors 418 are arranged at predetermined intervals (in Figure 6B (In this example, there are 16). Furthermore, when using the four-terminal resistance measurement method to detect the resistance value of the temperature sensor 418, 64 wires 418a are connected to the 16 temperature sensors 418.

[0087] Here, in the testing of high-heat-generating electronic devices D, such as GPUs (Graphics Processing Units), it is necessary to implement heat absorption control through temperature feedback control to maintain a constant temperature for the electronic device D. To this end, methods such as... Figure 4A , 4B and Figure 5A , 5BThe stage 10 shown is capable of heating each area, which enables the temperature of the electronic device D to rise and fall rapidly.

[0088] In temperature detection by temperature sensor 418, the distance from the electronic device D to the temperature sensor 418 changes depending on whether the area where the electronic device D is located is region P1 or region P2. Due to this distance difference, the temperature response of temperature sensor 418 to temperature changes in electronic device D is distance-dependent. Therefore, temperature control is performed by distance-based correction for each region P1, P2 of the electronic device D. Furthermore, temperature sensor 418 is embedded in plate member 410 via sensor tube 417. Therefore, the distance from the electronic device D to temperature sensor 418 in the vertical direction (thickness direction) also increases.

[0089] In contrast, in temperature detection using the film pattern 415, when the electronic device D under inspection heats up, the temperature of the film pattern 415 rises instantaneously, and simultaneously, the resistance value of the film pattern 415 changes instantaneously. Furthermore, since the film pattern 415 is formed on the entire surface of the platform 10 (plate member 410), temperature detection can be performed using a single film pattern 415 regardless of the region (e.g., regions P1, P2). Additionally, the distance from the electronic device D to the film pattern 415 is equidistant in all regions (e.g., regions P1, P2), thus eliminating the distance dependence of the detected temperature of the film pattern 415 in response to temperature changes in the electronic device D.

[0090] In addition, multiple second temperature detection controllers are used in proportion to the number of temperature sensors 418. In contrast, for a film pattern 415 disposed on the entire surface, temperature detection can be performed using a single first temperature detection controller.

[0091] In this way, temperature detection using the film pattern 415 can improve the responsiveness to temperature changes in the electronic device D. Furthermore, temperature detection using the film pattern 415 can eliminate the distance dependence of each region P1, P2.

[0092] In addition, the temperature of each region P1 and P2 can be detected by taking into account factors such as the area occupied by the pattern, the thickness of the film pattern 415, the thickness of the insulating film 416 from the back of the substrate W to the film pattern 415, and the temperature distribution deviation caused by the configuration of the refrigerant flow path 411.

[0093] In this way, by using temperature detection with the film pattern 415, the temperature Tchuck of stage 10 can be appropriately detected. Furthermore, by using temperature detection with the film pattern 415, it is also possible to estimate the usage with good responsiveness. Figure 8 , Figure 9 The junction temperature Tj of the electronic device D will be discussed later. Therefore, the temperature control of the junction temperature Tj of the electronic device D can be accelerated.

[0094] Furthermore, the heating unit 20 has a mode that selectively heats the area corresponding to the electronic device D being inspected, and a mode that heats the entire surface of the stage 10. In the mode that heats the entire surface of the stage 10, the temperature of the stage 10 can be detected based on the resistance value of the film pattern 415, and the detected temperature is output as the temperature of the stage 10. In the mode that selectively heats the area corresponding to the electronic device D being inspected, the temperature change of the area of ​​the stage 10 being inspected is estimated based on the change in the resistance value of the film pattern 415, and the temperature of the area of ​​the stage 10 being inspected is estimated.

[0095] Figure 8 This is an example of an enlarged view of inspection system 1, which magnifies the vicinity of electronic device D.

[0096] When checking the electrical characteristics of electronic device D, the substrate W is held on the stage 10. That is, electronic device D is thermally connected to stage 10. Furthermore, when checking the electrical characteristics of electronic device D, probe 12a abuts against the electrode portion E of electronic device D. That is, electronic device D is thermally connected to probe card 12 via probe 12a. Additionally, probe card 12 abuts against interface 13, and interface 13 abuts against tester 4. That is, probe card 12 is thermally connected to tester 4 via interface 13, and tester 4 is thermally connected to electronic device D via probe card 12.

[0097] Additionally, the temperature Tchuck of platform 10 is detected by temperature detection unit 30. Furthermore, the temperature Tprob of probe card 12 is detected by temperature detection unit 60.

[0098] Here, by allowing current to flow through the PN junction (e.g., a transistor) formed in the electronic device D, the junction temperature Tj of the electronic device D can be detected based on the correlation between the generated electromotive force and temperature. However, for example, when inspecting electronic devices D such as logic ICs, under clock conditions, the junction temperature Tj may sometimes be difficult to detect properly due to noise and other factors.

[0099] Furthermore, during the inspection of electronic device D, a temperature difference arises between the temperature Tchuck of stage 10 and the junction temperature Tj of electronic device D due to the thermal resistance between stage 10 and substrate W (electronic device D). Therefore, when inspecting electronic device D by controlling the temperature of stage 10 (Tchuck) to be the inspection temperature, the junction temperature Tj of electronic device D may be higher than the inspection temperature. That is, inspecting electronic device D at a temperature higher than the inspection temperature may reduce the yield of electronic device D.

[0100] Furthermore, when inspecting electronic device D by using temperature control to make the temperature of stage 10 Tchuck the inspection temperature, the heat flow from electronic device D to the inspection section becomes an interference.

[0101] Furthermore, the substrate W is primarily formed of silicon, for example. The probe card 12 is primarily formed of glass epoxy resin, for example. Due to the temperature difference between the substrate W and the probe card 12, a difference in thermal expansion occurs, and the probe 12a may detach from the electrode portion E.

[0102] Next, the temperature control in the inspection system 1 according to this embodiment will be described. Figure 9 This is an example of a diagram illustrating a heat flow model.

[0103] exist Figure 9 The diagram shows the heat flow Id, thermal resistance Rd, heat capacity Cd, and junction temperature Tj of electronic device D. It also shows the heat flow Ip, thermal resistance Rp, heat capacity Cp, temperature Tprob, heat flow Idp from probe card 12 to electronic device D, and thermal resistance Rdp from probe card 12 to electronic device D. Furthermore, it shows the heat flow Ic, thermal resistance Rc, heat capacity Cc, temperature Tchuck, heat flow Idc from platform 10 to electronic device D, and thermal resistance Rdc from platform 10 to electronic device D. Figure 9 In the middle, the temperature detection unit 30 of Tchuck is set to detect temperature (refer to...). Figure 2 4) was described as a single example, but the performance is further improved by configuring multiple temperature detection units 30 to switch between detecting temperature Tchuck or by detecting temperature Tchuck based on a model including multiple temperature detection units 30.

[0104] Here, the various thermal resistances and various thermal capacities are predetermined values ​​(values ​​that can be obtained) based on the structure of the substrate holding part, the substrate W, the inspection part, etc.

[0105] The heat flow Id of electronic device D corresponds to the heat flow generated by the inspection power detected by the power detection unit 41. The heat flow Ic of stage 10 corresponds to the heat flow in the temperature adjustment mechanism of the holding unit. The heat flow Ip of probe card 12 corresponds to the heat flow in the temperature adjustment mechanism of the inspection unit. That is, heat flows Id, Ic, and Ip are values ​​that the control unit 90 can detect.

[0106] Furthermore, the temperature of plate 10 (holding plate temperature) Tchuck corresponds to the temperature detected by temperature detection unit 30. The temperature of probe card 12 (probe card temperature) Tprob corresponds to the temperature detected by temperature detection unit 60. That is, temperatures Tchuck and Tprob are values ​​that the control unit 90 can detect.

[0107] On the other hand, the junction temperature Tj of electronic device D is a temperature that the control unit 90 cannot directly measure.

[0108] exist Figure 9 In the heat flow model shown, the differential values ​​of junction temperature Tj (Tj point), the differential values ​​of temperature Tprob of probe card 12 (Tprob point), and the differential values ​​of temperature Tchuck of platform 10 (Tchuck point) can be expressed by the following formulas.

[0109] [Number 1]

[0110]

[0111] Here, when X1=Tj, X2=Tchuck, X3=Tprob, U1=id, U2=ic, and U3=ip, it can be represented by the following formula.

[0112] [Number 2]

[0113]

[0114] That is, the above formulas are represented by dx / dt=Ax(t)+Bu(t) and y(t)=Cx(t).

[0115] Next, use Figures 10 to 12 The control method for controlling junction temperature Tj using observer 940 will be explained.

[0116] Figure 10 This is an example of a control diagram illustrating junction temperature control in the reference example. Here, we will illustrate the case where control is based on the temperature detected by multiple temperature sensors 418 without using the film pattern 415.

[0117] 901 represents the set junction temperature Tj (SV). 902 represents the power supplied to electronic device D (DUT_Power). 903 represents the temperature of probe card 12 (Probe_Temperature). 904 represents the signal for switching modes (Test_Mode).

[0118] 910 indicates the temperature controller (heater 20, cooler 26) of stage 10. 920 indicates the tester 4. 930 indicates the model of stage 10 (hereinafter also referred to as the holding plate model). 940 indicates the observer of junction temperature Tj. 945 indicates the switcher. 961 and 962 indicate the adder.

[0119] The set junction temperature (SV) Tj is input to the temperature controller 910. Additionally, under normal conditions (switcher 945 is off), the temperature (RTD sensor) detected by the temperature sensor 418, observed in the holding disk model 930, is fed back to the temperature controller 910. Furthermore, during testing (switcher 945 is on), the temperature (RTD sensor) detected by the temperature sensor 418, observed in the holding disk model 930, is input after offsetting (refer to adder 961) the junction temperature Tj estimated by the observer 940. The temperature controller 910 outputs heating (Heater MV) and cooling (Cooler MV) to the holding disk model 930.

[0120] The power supplied to the electronic device D (DUT_Power) is input to the tester 920. The heat generated by the electronic device D is added as a disturbance to the heating of the temperature controller 910 (refer to adder 962), and the result is output to the holding disk model 930.

[0121] The holding disk model 930 observes and outputs the temperature detected by the temperature sensor 418 (RTD Sensor).

[0122] The observer 940 is input with the temperature detected by the temperature sensor 418 (Chuck Sensor In), the temperature of the probe card 12 (Probe Temperature In), and the power supplied to the electronic device D (DUT Power). Furthermore, the observer 940 estimates and outputs the junction temperature Tj.

[0123] Here, in the structure where temperature is detected by temperature sensor 418, the positional relationship between the electronic device D being inspected and the temperature sensor 418 is different for each electronic device D. Specifically, in Figure 9In the heat flow model shown, the combination of thermal resistance Rdc from stage 10 to electronic device D, thermal resistance Rc of stage 10, and heat capacity Cc of stage 10 varies at each location of electronic device D. Therefore, in order to estimate the junction temperature Tj with high accuracy, it is necessary to prepare a large table recording the thermal resistance Rdc, thermal resistance Rc, and heat capacity Cc at each location of electronic device D, or to install temperature sensors 418 at each location of electronic device D, etc.

[0124] Figure 11 This is an example of a control diagram illustrating the junction temperature control in the first embodiment. Here, it is used... Figure 4A or Figure 5A The example shown is stage 10, which is controlled based on the detection value detected by the membrane pattern 415.

[0125] 901 represents the set junction temperature Tj (SV). 902 represents the power supplied to electronic device D (DUT_Power). 903 represents the temperature of probe card 12 (Probe_Temperature). 904 represents the signal for switching modes (Test_Mode).

[0126] 910 indicates the temperature controller (heater 20, cooler 26) of stage 10. 920 indicates the tester 4. 931 indicates the model of stage 10 (hereinafter also referred to as the holding plate model). 940 indicates the observer of junction temperature Tj. 945 indicates the switcher. 950 indicates the compensator for compensating the temperature of stage 10. 961 and 962 indicate adders.

[0127] The set temperature (SV) of the junction temperature Tj is input to the temperature controller 910. Additionally, under normal conditions (switcher 945 is off), the stage temperature (Tchuck) compensated by the compensator 950 is fed back to the temperature controller 910. Furthermore, during testing (switcher 945 is on), the temperature is input after offsetting the stage temperature (Tchuck) compensated by the compensator 950 by the junction temperature Tj estimated by the observer 940 (refer to adder 961). The temperature controller 910 outputs heating (Heater MV) and cooling (Cooler MV) signals to the holding plate model 930.

[0128] The power supplied to the electronic device D (DUT_Power) is input to the tester 920. The heat generated by the electronic device D is added as a disturbance to the heating of the temperature controller 910 (refer to adder 962), and the result is output to the holding disk model 930.

[0129] The holding disk model 931 observes and outputs the detection value (Pattern Sensor) detected by the film pattern 415. In addition, the detection value detected by the film pattern 415 is, for example, the change in the resistance value of the film pattern 415.

[0130] The compensator 950 calculates and outputs the stage temperature (Tchuck) based on the detection value (Pattern Sensor) detected by the membrane pattern 415.

[0131] The observer 940 is input with the detection value detected by the film pattern 415 (Chuck Sensor In), the temperature of the probe card 12 (Probe Temperature In), and the power supplied to the electronic device D (DUT Power). In addition, the observer 940 estimates and outputs the junction temperature Tj (Estimate Tj).

[0132] Here, in the structure where temperature is detected by the film pattern 415, temperature can be detected with the same characteristics regardless of the position of the electronic device D being inspected. In other words, in Figure 9 In the heat flow model shown, regardless of the location of the electronic device D, the combination of the thermal resistance Rdc from stage 10 to electronic device D, the thermal resistance Rc of stage 10, and the heat capacity Cc of stage 10 can be used. This improves the accuracy of the junction temperature Tj estimation.

[0133] Figure 12 This is an example of a control diagram illustrating the junction temperature control in the second embodiment. Here, it is used... Figure 4B or Figure 5B The stage 10 shown is illustrated as an example of a system controlled based on the detection value of the membrane pattern 415 and the temperature detected by multiple temperature sensors 418.

[0134] 901 represents the set junction temperature Tj (SV). 902 represents the power supplied to electronic device D (DUT_Power). 903 represents the temperature of probe card 12 (Probe_Temperature). 904 represents the signal for switching modes (Test_Mode).

[0135] 910 indicates the temperature controller (heater 20, cooler 26) of stage 10. 920 indicates the tester 4. 932 indicates the model of stage 10 (hereinafter also referred to as the holding plate model). 940 indicates the observer of junction temperature Tj. 945 indicates the switcher. 961 and 962 indicate the adder.

[0136] The set junction temperature (SV) Tj is input to the temperature controller 910. Additionally, under normal conditions (switcher 945 is off), the temperature (RTD sensor) detected by the temperature sensor 418, observed in the holding disk model 930, is fed back to the temperature controller 910. Furthermore, during testing (switcher 945 is on), the temperature (RTD sensor) detected by the temperature sensor 418, observed in the holding disk model 930, is input after offsetting the estimated junction temperature Tj (Estimate Tj) by the observer 940 (refer to adder 961). The temperature controller 910 outputs heating (Heater MV) and cooling (Cooler MV) to the holding disk model 930.

[0137] The power supplied to the electronic device D (DUT_Power) is input to the tester 920. The heat generated by the electronic device D is added as a disturbance to the heating of the temperature controller 910 (refer to adder 962), and the result is output to the holding disk model 930.

[0138] The holding disk model 931 observes and outputs the temperature detected by the temperature sensor 418 (RTD Sensor) and the detection value detected by the film pattern 415 (Pattern Sensor). In addition, the detection value detected by the film pattern 415 is, for example, the change in the resistance value of the film pattern 415.

[0139] The observer 940 is input with the detection value detected by the film pattern 415 (Chuck Sensor In), the temperature of the probe card 12 (Probe Temperature In), and the power supplied to the electronic device D (DUT Power). In addition, the observer 940 estimates and outputs the junction temperature Tj (Estimate Tj).

[0140] Here, in the structure where temperature is detected by the film pattern 415, temperature can be detected with the same characteristics regardless of the position of the electronic device D being inspected. In other words, in Figure 9 In the heat flow model shown, regardless of the location of the electronic device D, the combination of the thermal resistance Rdc from stage 10 to electronic device D, the thermal resistance Rc of stage 10, and the heat capacity Cc of stage 10 can be used. This improves the accuracy of the junction temperature Tj estimation.

[0141] Additionally, the compensator 950 (reference) eliminates the need for a temperature calculation station (Tchuck) Figure 11 ).

[0142] As described above, the control unit 90 performs temperature control by adjusting the temperature adjustment mechanism of the holding unit while inspecting the substrate W.

[0143] Therefore, when inspecting electronic component D, the inspection temperature can be set for electronic component D, allowing for appropriate inspection. Furthermore, it prevents a decrease in the yield of electronic component D.

[0144] Furthermore, compared to the structure where the electrode portion E is used solely for detecting the junction temperature Tj in the electronic device, the packaging cost of the electronic device D can be reduced. Additionally, the number of probes 12a provided on the probe card 12 can be reduced.

[0145] Furthermore, the control unit 90 controls the temperature adjustment mechanism of the holding unit so that the junction temperature Tj becomes the inspection temperature. Therefore, when inspecting electronic device D, the junction temperature Tj of electronic device D can be set to the inspection temperature, allowing for appropriate inspection. Additionally, it prevents a decrease in the yield of electronic device D.

[0146] The inspection system 1 has been described above, but this disclosure is not limited to the above-described embodiments, and various modifications and improvements can be made within the scope of the spirit of this disclosure as set forth in the claims.

[0147] Furthermore, this application claims priority based on Japanese Patent Application No. 2024-044164, filed on March 19, 2024, the entire contents of which are incorporated herein by reference.

[0148] Explanation of reference numerals in the attached figures

[0149] W: substrate

[0150] D: Electronic components

[0151] E: Electrode section

[0152] 1: Inspection System

[0153] 2: Containment Room

[0154] 3: Loader

[0155] 4: Tester (Inspection Department)

[0156] 10: Tablet (Substrate Holding Section)

[0157] 10a: Refrigerant Flow Path

[0158] 12: Probe Card (Inspection Department)

[0159] 12a: Probe (Inspection Section)

[0160] 13: Interface (Inspection Department)

[0161] 14: Temperature control unit

[0162] 20: Heating section

[0163] 25: Power Supply

[0164] 26: Cooler

[0165] 30: Temperature Detection Unit (Substrate Holding Unit Detection Unit)

[0166] 41: Power Testing Department

[0167] 50: Temperature control mechanism

[0168] 55: Power Supply

[0169] 60: Temperature Detection Department (Inspection Department Temperature Detection Department)

[0170] 90: Control Department

[0171] 91: Temperature control section

[0172] 92: Inspection Department Temperature Control Department

[0173] 93: Analysis Section

[0174] 60: Temperature Detection Department

[0175] 415, 515: Film pattern (substrate holding section detection section)

[0176] 416, 516: Insulating film

[0177] 418, 518: Temperature sensors (substrate holding section detection section)

Claims

1. An inspection system for inspecting a substrate while performing temperature control, the inspection system comprising: A substrate holding portion that holds the substrate; The inspection unit supplies inspection power to the electrode section of the substrate; The substrate holding section detection section detects a detection value related to the temperature of the substrate holding section. A temperature adjustment mechanism for the holding section, which adjusts the temperature of the substrate holding section; The temperature detection unit of the inspection section detects the temperature of the inspection section; and Control Department The substrate holding portion detection portion has a film pattern parallel to the substrate. The control unit performs temperature control of the substrate holding section via the holding section temperature adjustment mechanism while simultaneously inspecting the substrate.

2. The inspection system according to claim 1, wherein, The film pattern is integrally disposed with the entire surface of the substrate mounting surface of the substrate holding portion.

3. The inspection system according to claim 1, wherein, The control unit estimates the temperature of the substrate based on the inspection power, the temperature of the inspection unit detected by the inspection unit temperature detection unit, and the detection value of the substrate holding unit detection unit.

4. The inspection system according to claim 3, wherein, The temperature of the substrate is the junction temperature of the substrate estimated based on a model.

5. The inspection system according to claim 1, wherein, The detection value of the substrate holding part detection unit is the change in the resistance value of the film pattern.

6. The inspection system according to claim 1, wherein, The substrate holding portion detection portion has the film pattern and a temperature sensor for detecting the temperature of the substrate holding portion.

7. The inspection system according to claim 6, wherein, The temperature sensor is a thermocouple or a temperature-sensing resistor.

8. The inspection system according to claim 6, wherein, The control unit estimates the junction temperature based on a model, using the inspection power, the temperature of the inspection unit detected by the inspection unit temperature detection unit, and the detection value of the film pattern detected by the substrate holding unit detection unit. The control unit performs temperature control of the holding part temperature adjustment mechanism based on the temperature detected by the temperature sensor, while simultaneously inspecting the substrate.

9. The inspection system according to claim 8, wherein, The detected value of the film pattern is the change in the resistance value of the film pattern.

10. A temperature control method for an inspection system, the inspection system comprising: a substrate holding section for holding a substrate; an inspection section for supplying inspection power to electrode sections of the substrate; a substrate holding section detection section for detecting a detection value related to the temperature of the substrate holding section; a holding section temperature adjustment mechanism for adjusting the temperature of the substrate holding section; and an inspection section temperature detection section for detecting the temperature of the inspection section, wherein the inspection system performs temperature control while inspecting the substrate, wherein... The substrate holding portion detection portion has a film pattern parallel to the substrate. The temperature control method performs temperature control of the substrate holding part via the holding part temperature adjustment mechanism while simultaneously inspecting the substrate.

11. The temperature control method for the inspection system according to claim 10, wherein, The temperature of the substrate is estimated based on the inspection power, the temperature of the inspection section detected by the inspection section temperature detection section, and the detection value of the substrate holding section detection section.

12. The temperature control method for the inspection system according to claim 11, wherein, The temperature of the substrate is the junction temperature of the substrate estimated based on a model.

13. The temperature control method for the inspection system according to claim 10, wherein, The detection value of the substrate holding part detection unit is the change in the resistance value of the film pattern.

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