A method and apparatus for cleaning silicon carbide electrodes

Abstract

A method and an apparatus for cleaning silicon carbide electrodes. The method for cleaning silicon carbide electrodes includes: cleaning a vertically placed silicon carbide electrode with a plurality of through holes extending along the axial direction of the silicon carbide electrode by using a cleaning solution containing an etchant, the surface of the silicon carbide electrode and the inner wall forming the through holes having a film layer; and moving the silicon carbide electrode so that the surface of the silicon carbide electrode has an angle with the vertical direction, and cleaning the silicon carbide electrode by using the cleaning solution containing the etchant. Thus, the film layer on the surface of the silicon carbide electrode and in the through holes can be cleaned thoroughly.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and in particular to a method and cleaning equipment for cleaning silicon carbide electrodes. Background Technology

[0002] Silicon carbide (SiC) components are currently widely used in semiconductor manufacturing equipment. For example, in plasma etching machines, silicon carbide rings are typically used to support the wafer, and SiC electrodes are used as the upper electrodes of the plasma etching machine cavity. These SiC components require roughing and finishing processes during manufacturing. The surface of the machined SiC components has a damaged layer. To reduce this damaged layer, an oxide layer is usually formed on the surface first, followed by wet etching to remove the oxide layer and reduce the damaged layer simultaneously.

[0003] In related technologies, a vertical (surface vertical) immersion cleaning method is typically used to remove the oxide film on the surface of SiC components. However, there are multiple through holes extending along the thickness direction inside the SiC electrode. Vertical immersion cleaning can only remove the oxide film on the surface of the SiC electrode, and it is difficult to clean the oxide film inside the holes. Summary of the Invention

[0004] This section provides a general overview of this disclosure, rather than a full disclosure of the entire scope or all features of this disclosure.

[0005] This disclosure provides a method for cleaning a silicon carbide electrode. The method includes: cleaning a vertically placed silicon carbide electrode having multiple through holes using a cleaning solution containing an etchant, wherein the through holes extend along the axial direction of the silicon carbide electrode, and a film layer is formed on the surface of the silicon carbide electrode and the inner wall forming the through holes; and moving the silicon carbide electrode such that the surface of the silicon carbide electrode makes an angle with the vertical direction, and cleaning the silicon carbide electrode using the cleaning solution containing the etchant.

[0006] This disclosure also provides a cleaning apparatus. The cleaning apparatus is used to clean silicon carbide electrodes and includes a first cleaning unit and a second cleaning unit. The first cleaning unit uses a cleaning solution containing an etchant to clean a vertically placed silicon carbide electrode having multiple through holes, wherein the through holes extend along the axial direction of the silicon carbide electrode, and a film layer is formed on the surface of the silicon carbide electrode and the inner wall forming the through holes. The second cleaning unit uses a cleaning solution containing an etchant to clean silicon carbide electrodes whose surfaces form an angle with the vertical direction. Attached Figure Description

[0007] Figure 1 This is a schematic diagram of a silicon carbide electrode containing multiple through holes.

[0008] Figure 2 For vertical soaking and cleaning Figure 1A schematic diagram of a silicon carbide electrode.

[0009] Figure 3 for Figure 1 A schematic diagram of the silicon carbide electrode before cleaning.

[0010] Figure 4 for Figure 2 A schematic diagram of a silicon carbide electrode after vertical immersion cleaning.

[0011] Figure 5 To be Figure 4 A schematic diagram of cleaning a tilted silicon carbide electrode.

[0012] Figure 6 This is a flowchart illustrating a method for cleaning a silicon carbide electrode according to an embodiment of this disclosure.

[0013] Figure 7 To be Figure 1 A schematic diagram of cleaning a silicon carbide electrode after it has been placed horizontally.

[0014] Figure 8 This is a schematic diagram of the second cleaning unit according to an embodiment of the present disclosure.

[0015] Figure 9 This is a schematic diagram of a vertical cleaning device.

[0016] Figure 10 This is a schematic diagram of a horizontal cleaning device.

[0017] Figure 11 This is a schematic diagram of a controller according to an embodiment of the present disclosure. Detailed Implementation

[0018] The technical solutions in this disclosure will now be clearly and completely described with reference to the accompanying drawings.

[0019] It should be noted that, for clarity, not all features of a particular embodiment are described or shown in the specification and drawings. Furthermore, to avoid unnecessary details obscuring the technical solutions of interest in this disclosure, only the device structure closely related to the technical solutions of this disclosure is described and shown in the specification and drawings, while other details that are not closely related to the technical content of this disclosure and are known to those skilled in the art are omitted.

[0020] Reference Figure 1The silicon carbide electrode 100 has a plurality of through holes 120 extending along the axial direction. The through holes 120 extend from one side surface of the silicon carbide electrode 100 to the other side surface. In a plasma etching apparatus, the silicon carbide electrode 100 is typically located on the upper side of the cavity of the plasma etching apparatus. Etching gas enters the cavity through the through holes 120. At the same time, the silicon carbide electrode 100 located on the upper side of the cavity of the plasma etching apparatus participates in the formation of the electric field as the upper electrode. The etching gas forms plasma within the electric field of the cavity, and the plasma is used to etch the device to be etched placed in the cavity.

[0021] After roughing and finishing, a damage layer with a depth of micrometers will form on the surface of the silicon carbide electrode 100. To remove this damage layer, the silicon carbide electrode 100 is usually oxidized first to form an oxide film on its surface, sides and the inner wall of the through hole 120. Then, the oxide film is removed by wet etching and cleaning, which reduces the damage layer while removing the oxide film.

[0022] Reference Figure 2 In related technologies, a vertical immersion cleaning method is typically used to remove the oxide film from silicon carbide electrodes 100. Multiple silicon carbide electrodes 100 are placed vertically (i.e., their surfaces are parallel to the vertical direction, and their axes are perpendicular to the vertical direction) and parallel to each other in a cleaning tank. Gaps exist between adjacent silicon carbide electrodes 100 to allow the cleaning solution to enter the gaps and react with the oxide film on the surface of the silicon carbide electrodes 100. During vertical immersion cleaning, a cleaning solution containing a corrosive agent is injected into the cleaning tank until the silicon carbide electrodes 100 are completely submerged. Afterward, a period of time is allowed to stand, allowing the corrosive agent in the cleaning solution to react with the oxide film on the surface and sides of the silicon carbide electrodes 100, thereby removing the oxide film. Specifically, refer to... Figure 3 In this context, the baseline L represents the vertical direction, the surface of the silicon carbide electrode 100 is parallel to the vertical direction, and the filled portion represents the oxide film. Figure 3 Only one through-hole 120 is shown; it is understood that in practice, the silicon carbide electrode 100 may have multiple through-holes 120. When the silicon carbide electrode 100 is placed vertically for immersion cleaning, the cleaning solution mainly flows downwards vertically due to gravity, resulting in relatively small lateral scouring and shearing forces on the inner wall of the through-hole 120 (hereinafter referred to as the hole wall), making it difficult to remove the oxide film from the hole wall. Furthermore, after the oxide film on the surface of the silicon carbide electrode 100 is removed, the surface around the through-hole 120 is hydrophobic, easily forming air bubbles at the through-hole 120. These air bubbles hinder the contact between the cleaning solution and the hole wall, exacerbating the difficulty of removing the oxide film from the hole wall. Even if the cleaning solution successfully enters the hole, due to the high density of waste liquid and debris generated by the chemical reaction, in the vertically placed state, the waste liquid and debris will deposit at the bottom of the hole (i.e., the hole wall near the ground), hindering the entry of fresh cleaning solution into the hole bottom area, further reducing the cleaning effect inside the hole. The residual oxide film on the hole wall after vertical immersion cleaning is shown below. Figure 4As shown, when the silicon carbide electrode 100 is used in a plasma etching apparatus, the residual oxide film on the inner wall of the through hole 120 may prevent the etching gas from entering the cavity, or affect the electrical performance of the silicon carbide electrode 100, resulting in low etching performance of the plasma etching apparatus.

[0023] To address the aforementioned problems, this disclosure provides a method and equipment for cleaning silicon carbide electrodes, which will be described in detail below.

[0024] Reference Figures 3 to 6 This disclosure provides a method for cleaning a silicon carbide electrode 100, comprising the following steps: Step S220: Clean the vertically placed silicon carbide electrode 100 with a cleaning solution containing an corrosive agent. Step S240: Move the silicon carbide electrode 100 so that the surface of the silicon carbide electrode 100 makes an angle θ with the vertical direction, and clean the silicon carbide electrode 100 with a cleaning solution containing an etchant.

[0025] It is understood that the surface of silicon carbide electrode 100 refers to the upper or lower surface of silicon carbide electrode 100. The included angle θ here does not include 0 degrees. The surface of silicon carbide electrode 100 has an angle θ with the vertical direction, that is, the surface of silicon carbide electrode 100 is no longer parallel to the vertical direction.

[0026] Reference Figure 3 Before cleaning, the surface, sides, and inner wall of the through hole 120 of the silicon carbide electrode 100 have an oxide film. Step S220 involves vertically cleaning the silicon carbide electrode 100 to remove the oxide film from its surface. The vertical cleaning method can be immersion cleaning, rinsing, or other cleaning methods; this disclosure does not limit this. The cleaned silicon carbide electrode 100 is as follows: Figure 4 As shown, oxide film residue remains inside the through-hole 120. Perform step S240, referring to... Figure 5 Move the silicon carbide electrode 100 so that the surface of the silicon carbide electrode 100 forms a non-zero angle θ with the vertical direction (as shown by the baseline L). Due to gravity, the liquid flow direction of the cleaning fluid is usually vertical. The non-zero angle θ between the surface of the silicon carbide electrode 100 and the vertical direction means that the surface of the silicon carbide electrode 100 and the liquid flow direction of the cleaning fluid form a non-zero angle θ. As a result, the cleaning fluid can enter the through hole 120 or directly flush the inner wall of the through hole 120 to remove the oxide film on the hole wall.

[0027] It is understood that step S220 is described here before step S240, but step S220 can also be described after step S240. Both sequences can effectively clean the oxide film on the surface of the silicon carbide electrode 100 and the inner wall of the through hole 120.

[0028] By employing a two-step cleaning method, in addition to the vertical cleaning in step S220, the placement angle of the silicon carbide electrode 100 is changed. This allows the cleaning solution to enter and flow through the through-hole 120 in a direction different from the vertical direction during the cleaning in step S240. This alters the way the cleaning solution acts on the inner wall of the through-hole 120, generating a lateral (axial) scouring force on the inner wall. This ensures that the cleaning solution fully contacts and reacts with the oxide film inside the hole, thereby removing the oxide film on the inner wall of the through-hole 120. Furthermore, because the surface of the silicon carbide electrode 100 is inclined at an angle θ to the vertical direction, the waste liquid and debris after the reaction can be discharged from the through-hole 120 under the influence of gravity, preventing accumulation at the bottom of the hole and further improving the cleaning effect of the oxide film on the hole wall.

[0029] Step S220 can be performed after step S240. However, performing step S240 before step S220 may cause the cleaning solution and reaction waste liquid to re-carry a small amount of particles into the already cleaned through-hole 120 during subsequent vertical cleaning steps, resulting in secondary contamination. Therefore, it is conceivable to move the silicon carbide electrode 100 after cleaning the vertically placed silicon carbide electrode 100, i.e., to perform step S240 after step S220. Arranging vertical cleaning first, and inclined or horizontal cleaning later, can reduce secondary contamination of the already cleaned through-hole 120 by subsequent steps, ensuring the final cleaning quality.

[0030] Understandably, the closer the angle θ between the surface of the silicon carbide electrode 100 and the vertical direction is to 90 degrees, the greater the scouring and shearing force of the cleaning fluid within the through hole 120, and the better the cleaning effect. It can be envisioned that, referring to... Figure 7 In step S240, after moving the silicon carbide electrode 100, the surface of the silicon carbide electrode 100 is perpendicular to the vertical direction, that is, the silicon carbide electrode 100 is in a horizontal position. In this state, the cleaning fluid flows from top to bottom through the inner wall of the through hole 120 (e.g., due to gravity). Figure 7 (As shown by the middle arrow). In all directions, the scouring effect of the cleaning fluid on the inner wall of the hole tends to be consistent. Every position on the inner wall of the through hole 120 can come into contact with the cleaning fluid in turn and be scouring by the cleaning fluid, so that the cleaning fluid has a more comprehensive effect on the inner wall of the hole, reducing the formation of cleaning dead corners, thereby reducing the oxide film residue inside the through hole 120.

[0031] It is conceivable that, with reference to Figure 7After moving the silicon carbide electrode 100 so that its surface is perpendicular to the vertical direction (horizontally placed), the silicon carbide electrode 100 is cleaned by rinsing. Compared with immersion cleaning, rinsing cleaning involves actively delivering cleaning fluid to the surface of the silicon carbide electrode 100, allowing the cleaning fluid to rinsing the surface of the silicon carbide electrode 100 and the inner wall of the through hole 120 at a certain flow rate and volume. The active rinsing method can further enhance the rinsing force of the cleaning fluid on the inner wall of the through hole 120, accelerate the removal of the oxide film, and at the same time, the rinsing force of the cleaning fluid helps to discharge the reaction waste liquid and debris in the through hole 120 along with the cleaning fluid, thereby further improving the cleaning effect.

[0032] Reference Figure 8 During rinsing, the outlet pipe 344 outputs a cleaning solution containing an corrosive agent to the surface of the horizontally placed silicon carbide electrode 100. The flow rate of the outlet pipe 344 is greater than the sum of the natural flow rates of the cleaning solution within all the through holes 120. It is understandable that when the flow rate of the outlet pipe 344 exceeds the natural flow rate of the cleaning solution within the through holes 120, the cleaning solution will accumulate on the surface of the silicon carbide electrode 100 (e.g., ...). Figure 7 As shown in the filling section, the entire surface of the silicon carbide electrode 100 can be fully immersed in the cleaning solution, ensuring that each through-hole 120 on the silicon carbide electrode 100 is thoroughly cleaned. If the flow rate is too low, the cleaning solution can only flow through a portion of the surface of the silicon carbide electrode 100, and some through-holes 120 may not be properly cleaned due to insufficient contact with the cleaning solution. While using a flow outlet that covers the entire surface of the silicon carbide electrode 100 can clean the inner walls of the through-holes 120, the cost is high. Therefore, by setting the flow rate to be greater than the flow rate of the cleaning solution within the through-holes 120, the oxide film on the inner walls of the through-holes 120 can be cleaned at a lower cost.

[0033] Furthermore, when the diameter of the through-hole 120 is 0.5 mm to 1 mm and the hole depth is greater than 10 mm, the flow rate of the liquid outlet pipe 344 is greater than 20 L / min. At this flow rate, the cleaning fluid can cover the entire surface of the silicon carbide electrode 100 with sufficient velocity and flow rate, ensuring that each through-hole 120 is thoroughly flushed by the cleaning fluid. It is conceivable that the specific value of the flow rate can be appropriately adjusted according to parameters such as the actual size of the silicon carbide electrode 100, the number of through-holes 120, and their diameter.

[0034] It is conceivable that the cleaning solution is a solution containing hydrofluoric acid (HF). Hydrofluoric acid is an industrial standard reagent for removing silicon dioxide oxide films. The chemical reaction equation between hydrofluoric acid and the oxide film (mainly composed of silicon dioxide (SiO2)) of the silicon carbide electrode 100 is as follows: SiO2+4HF →SiF4 (silicon tetrafluoride) +2H2O (water) Through the above reaction, hydrofluoric acid can dissolve and remove the oxide film on the surface of the silicon carbide electrode 100 and the inner wall of the through hole 120. Hydrofluoric acid not only removes the oxide film but also inhibits its reformation and dissolves any metallic contaminants that may be present on the surface of the silicon carbide electrode 100, thus improving the cleaning quality. It is understood that the cleaning solution containing corrosive agents is described using a solution containing hydrofluoric acid as an example. In the embodiments of this disclosure, other corrosive solutions that can effectively remove the oxide film from the silicon carbide electrode 100 are also within the scope of the embodiments of this disclosure.

[0035] Furthermore, the hydrofluoric acid content in the cleaning solution can be 5-15% VOL (Percent Volume), i.e., a 5-15% dilute hydrofluoric acid (DHF) solution is used. It is understandable that when the hydrofluoric acid content in the cleaning solution is below 5% VOL, the corrosive power of hydrofluoric acid on the oxide film is relatively small, and oxide film residue may still remain after cleaning, resulting in poor cleaning effect. When the hydrofluoric acid content in the cleaning solution is above 15% VOL, there will still be residual hydrofluoric acid after reacting with the oxide film, leading to unnecessary waste. In addition, the residual hydrofluoric acid may react with the surface of the silicon carbide electrode 100 or the inner wall of the through hole 120 after the oxide film has been completely removed, damaging the silicon carbide electrode 100.

[0036] In one possible implementation, the hydrofluoric acid content in the cleaning solution can be 10% VOL. When using an immersion cleaning method, the immersion time can be 2 minutes. At this concentration, the degree of corrosion of the silicon carbide electrode 100 itself by the hydrofluoric acid is relatively controllable while removing the oxide film on the surface of the silicon carbide electrode 100 and the inner wall of the through hole 120, achieving a good balance between removing the oxide film and protecting the silicon carbide electrode 100.

[0037] During the transition from vertical to inclined or horizontal cleaning, the position of the silicon carbide electrode 100 is changed by replacing different cleaning devices. For vertical cleaning, refer to... Figure 9 The silicon carbide electrode 100 is vertically inserted into the corresponding support fixture (vertical cleaning device) for immersion cleaning; after vertical cleaning is completed, the silicon carbide electrode 100 is transferred to the horizontal cleaning device, referring to... Figure 10 The silicon carbide electrode 100 is fixed in a horizontal position by the clamps of the horizontal cleaning device, and then subsequent rinsing and cleaning are performed. It is conceivable that the position change from vertical to horizontal can also be achieved by other mechanical means, such as rotating the silicon carbide electrode 100 in the same fixture from a vertical state to a horizontal state by a rotating mechanism. This disclosure does not limit the specific position change method.

[0038] This disclosure also provides a cleaning device for cleaning silicon carbide electrodes 100, the cleaning device including a first cleaning unit and a second cleaning unit 340.

[0039] The first cleaning unit is used to clean the vertically placed silicon carbide electrode 100 using a cleaning solution containing an corrosive agent. In some possible embodiments, the first cleaning unit may include... Figure 9 The vertical cleaning apparatus is shown. It is understood that the first cleaning unit can be used to perform step S220 of the method for cleaning silicon carbide electrodes of this disclosure, namely, immersing the vertically placed silicon carbide electrode 100 in water to remove the oxide film on the outer surface of the silicon carbide electrode 100. In the first cleaning unit, the surface of the silicon carbide electrode 100 is parallel to the vertical direction, and the silicon carbide electrode 100 is immersed in a cleaning solution containing an etchant, the cleaning solution etching and cleaning the surface of the silicon carbide electrode 100.

[0040] The second cleaning unit 340 is used to clean the surface of the silicon carbide electrode 100, which has an angle of not less than 0 degrees with the vertical direction, using a cleaning solution containing an corrosive agent. In some possible embodiments, when the angle is 90 degrees, i.e., when the silicon carbide electrode 100 is placed horizontally, the second cleaning unit 340 may include... Figure 10 The horizontal cleaning apparatus is shown. It is understood that the second cleaning unit 340 can be used to perform step S240 of the method for cleaning silicon carbide electrodes of this disclosure, that is, to clean the silicon carbide electrode 100 after it has been moved and is in an inclined or horizontal position, removing the oxide film on the inner wall of the through hole 120. Through the coordinated operation of the first cleaning unit and the second cleaning unit 340, the cleaning equipment can complete both vertical cleaning and inclined or horizontal cleaning steps, and can remove the oxide film from the outer surface of the silicon carbide electrode 100 and the inner wall of the through hole 120.

[0041] In some possible implementations, the first cleaning unit and the second cleaning unit 340 can be two independent cleaning units, corresponding to vertical cleaning processes and inclined or horizontal cleaning processes, respectively. In practical use, the silicon carbide electrode 100 is first vertically cleaned in the first cleaning unit and then transferred to the second cleaning unit 340 for inclined or horizontal cleaning. In other possible implementations, the first cleaning unit and the second cleaning unit 340 can also be integrated into the same device, with the silicon carbide electrode 100 transferred from the first cleaning unit to the second cleaning unit 340 via an internal transfer mechanism, thereby improving the automation level and production efficiency of the cleaning process. This disclosure does not limit the specific integration method of the first cleaning unit and the second cleaning unit 340.

[0042] It is conceivable that, with reference to Figure 8 The second cleaning unit 340 includes a housing 342 and a liquid outlet pipe 344.

[0043] The housing 342 is the main structure of the second cleaning unit 340, used to house the silicon carbide electrode 100 and provide a relatively enclosed cleaning space for the cleaning process. During cleaning, the silicon carbide electrode 100 is fixed inside the housing 342, and the surface of the silicon carbide electrode 100 forms an angle with the vertical direction. It is understood that the housing 342 is made of a corrosion-resistant material, and the housing 342 has a corresponding fixing structure inside to fix the silicon carbide electrode 100 at a specific angle (e.g., horizontal) inside the housing 342, ensuring that the position and angle of the silicon carbide electrode 100 remain stable during the cleaning process, thereby ensuring the consistency and reliability of the cleaning. In some possible embodiments, refer to... Figure 8 When the included angle is 90 degrees, i.e., when the silicon carbide electrode 100 is placed horizontally, the second cleaning unit 340 may include Figure 10 The horizontal cleaning device is shown. The housing 342 includes a side surface and a bottom surface. The side surface of the housing 342 is provided with a slot that mates with the horizontal cleaning device, for installing the horizontal cleaning device inside the housing 342, and making the bearing surface of the horizontal cleaning device (the plane for bearing or fixing the silicon carbide electrode 100) parallel to the bottom surface of the housing 342.

[0044] The outlet pipe 344 is installed inside the housing 342 and outputs a cleaning solution containing corrosive agent to the surface of the silicon carbide electrode 100 fixed inside the housing 342 during cleaning. The outlet pipe 344 is connected to the cleaning solution supply system and can actively deliver the cleaning solution containing corrosive agent to the surface of the silicon carbide electrode 100 at a certain flow rate and velocity, thereby realizing active rinsing and cleaning of the silicon carbide electrode 100.

[0045] Understandably, the installation position and discharge direction of the outlet pipe 344 can be configured according to actual cleaning needs to ensure that the cleaning fluid can evenly cover the entire surface of the silicon carbide electrode 100 and flow into the through hole 120. It is conceivable that the outlet pipe 344 can be a single pipe or a combination of multiple pipes. Multiple pipes can output cleaning fluid to the surface of the silicon carbide electrode 100 from different directions or positions to improve the uniformity of the cleaning fluid coverage on the surface of the silicon carbide electrode 100. The opening of the outlet pipe 344 can face the surface of the silicon carbide electrode 100 so that the cleaning fluid can directly flush the surface of the silicon carbide electrode 100 and the opening area of ​​the through hole 120. A drain outlet can be provided on the bottom or side of the housing 342 near the bottom to discharge the waste liquid after the reaction from the second cleaning unit 340.

[0046] In some possible implementations, refer to Figure 8The housing 342 includes a side surface and a bottom surface, and the second cleaning unit 340 includes two outlet pipes 344. The outlet pipes 344 are installed at the top of two opposite side surfaces of the housing 342, and the openings of the outlet pipes 344 face (in the direction of liquid discharge) between the side surface of the housing 342 opposite to its mounting surface and the bottom surface of the housing 342.

[0047] In some other possible embodiments, the second cleaning unit 340 includes multiple outlet pipes 344, which are installed in parallel on the top of the housing 342, with the openings of the outlet pipes 344 facing the bottom surface of the housing 342. When the multiple outlet pipes 344 simultaneously output cleaning fluid, the cleaning fluid can cover the surface of the silicon carbide electrode 100.

[0048] Installing the outlet pipe 344 inside the housing 342 can limit the amount of cleaning fluid output from the outlet pipe 344, reducing the possibility of corrosive cleaning fluid flowing out of the second cleaning unit 340 and corroding other parts of the cleaning equipment.

[0049] It is conceivable that, with reference to Figure 8 The cleaning equipment also includes a controller 360. The controller 360 is connected to the outlet pipe 344 and is used to control the outlet flow rate of the outlet pipe 344 so that the outlet flow rate of the outlet pipe 344 is greater than the flow rate of the cleaning fluid naturally flowing in the through hole 120 of the silicon carbide electrode 100.

[0050] Please refer to Figure 11 This illustration shows a structural block diagram of a controller 360 provided in an exemplary embodiment of the present disclosure. In some examples, the controller 360 can be at least one of devices such as a smartphone, smartwatch, desktop computer, laptop, virtual reality terminal, augmented reality terminal, wireless terminal, and laptop computer. The controller 360 has communication capabilities and can access a wired or wireless network. The controller 360 can refer to one of a plurality of terminals, and those skilled in the art will understand that the number of such terminals can be more or less. In some examples, the controller 360 can control the flow rate of the liquid outlet tube 344 based on the accessed wired or wireless network.

[0051] like Figure 11 As shown, the controller 360 in this disclosure may include one or more components such as a processor 362 and a memory 364.

[0052] Optionally, the processor 362 connects to various parts within the controller 360 using various interfaces and lines. It executes various functions of the controller 360 and processes data by running or executing instructions, programs, code sets, or instruction sets stored in the memory 364, and by calling data stored in the memory 364. Optionally, the processor 362 can be implemented using at least one hardware form of Digital Signal Processing (DSP), Field-Programmable Gate Array (FPGA), or Programmable Logic Array (PLA). The processor 362 can integrate one or a combination of several of the following: Central Processing Unit (CPU), Graphics Processing Unit (GPU), Neural-network Processing Unit (NPU), and baseband chip. Specifically, the CPU primarily handles the operating system, user interface, and applications; the GPU is responsible for rendering and drawing the content required for display on the touch screen; the NPU is used to implement Artificial Intelligence (AI) functions; and the baseband chip is used for wireless communication. It is understandable that the aforementioned baseband chip may not be integrated into the processor 362, but may be implemented using a separate chip.

[0053] The memory 364 may include random access memory (RAM) or read-only memory (ROM). Optionally, the memory 364 may include a non-transitory computer-readable storage medium. The memory 364 may be used to store instructions, programs, code, code sets, or instruction sets. The memory 364 may include a program storage area and a data storage area, wherein the program storage area may store instructions for implementing an operating system, instructions for at least one function (such as touch function, sound playback function, image playback function, etc.), instructions for implementing the various method embodiments described above, etc.; the data storage area may store data created according to the use of the controller 360, etc.

[0054] In addition, those skilled in the art will understand that the structure of the controller 360 shown in the above figures does not constitute a limitation on the controller 360. The controller 360 may include more or fewer components than shown, or combine certain components, or have different component arrangements. For example, the controller 360 may also include a display screen, camera assembly, microphone, speaker, radio frequency circuit, input unit, sensors (such as accelerometer, angular velocity sensor, light sensor, etc.), audio circuit, Wi-Fi (Wireless Fidelity) module, power supply, Bluetooth module, etc., which will not be described in detail here.

[0055] The controller 360 actively controls the flow rate of the liquid outlet pipe 344 to ensure that the cleaning fluid covers the entire surface of the silicon carbide electrode 100 with sufficient flow, so that each through hole 120 on the silicon carbide electrode 100 can be adequately rinsed with the cleaning fluid. It is conceivable that the controller 360 can also automatically calculate and set an appropriate flow rate according to the specifications of the silicon carbide electrode 100 (such as electrode size, number and diameter of through holes 120, etc.) to meet the cleaning needs of silicon carbide electrodes 100 of different specifications.

[0056] In some possible implementations, the controller 360 controls the outflow rate of the outlet pipe 344 to be greater than 20 L / min. At this outflow rate, the cleaning fluid can cover the surface of the silicon carbide electrode 100 with sufficient flow rate and total volume, ensuring that each through hole 120 is within the flushing range of the cleaning fluid.

[0057] It is understood that the connection between the controller 360 and the liquid outlet pipe 344 can be wired or wireless, and this disclosure does not limit this.

[0058] Through the division of labor and cooperation between the first cleaning unit and the second cleaning unit 340 of the above-mentioned cleaning equipment, and the precise control of the liquid flow rate by the controller 360, the cleaning equipment can systematically achieve comprehensive cleaning of the oxide film on the outer surface of the silicon carbide electrode 100 and the inner wall of the through hole 120. This solves the problem that the vertical immersion cleaning method in related technologies cannot effectively remove the oxide film on the inner wall of the through hole 120, reduces the risk of particles being generated on the silicon carbide electrode 100 during use, and improves the quality of the silicon carbide electrode 100.

[0059] This disclosure also provides a cleaning device for cleaning silicon carbide electrodes, the cleaning device including a third cleaning unit and a transmission unit.

[0060] The third cleaning unit cleans the silicon carbide electrode 100 using a cleaning solution containing an corrosive agent. The transmission unit is coupled to the third cleaning unit and drives the silicon carbide electrode 100 within the third cleaning unit to move, so that the surface of the silicon carbide electrode 100 is parallel to the vertical direction or has an angle with the vertical direction.

[0061] In some possible implementations, the third cleaning unit includes a movable support subunit (e.g., a support member or clamp) and an outlet pipe. The support subunit is used to fix the silicon carbide electrode 100, and the outlet pipe is used to output a cleaning solution containing a corrosive agent. A transmission unit is coupled to the support subunit. When step S220 is executed, the transmission unit drives the support subunit, causing the silicon carbide electrode 100 fixed to the support subunit to be placed vertically. Then, the outlet pipe outputs cleaning solution to the silicon carbide electrode 100 to clean it. When step S240 is executed, the transmission unit drives the support subunit to rotate, causing the silicon carbide electrode 100 fixed to the support subunit to form an angle with the vertical direction. Then, the outlet pipe outputs cleaning solution to the silicon carbide electrode 100 to clean it.

[0062] The transmission unit is coupled to the third cleaning unit and drives the silicon carbide electrode 100 to move during the cleaning process in the third cleaning unit. This changes the relative position of the silicon carbide electrode 100 with respect to the vertical direction, thereby removing the oxide film on the surface, sides, and inside the through hole 120 of the silicon carbide electrode 100 and reducing oxide film residue. Using a single cleaning unit in conjunction with the transmission unit results in a simpler structure compared to a cleaning device consisting of two cleaning units. Furthermore, it eliminates the need to transfer the silicon carbide electrode 100 between the two cleaning units, simplifying the cleaning process and improving cleaning efficiency.

[0063] It should be noted that the technical solutions described in this disclosure can be combined arbitrarily as long as they do not conflict.

[0064] In this disclosure, the terms "first," "second," etc., are used merely for descriptive purposes and should not be considered restrictive. Furthermore, although this disclosure has been described with reference to exemplary embodiments, it should be understood that this disclosure is not limited to the specific embodiments described and shown herein. Various changes to the exemplary embodiments can be made by those skilled in the art without departing from the scope defined by the claims of this disclosure.

[0065] The features mentioned and / or shown in the foregoing description of exemplary embodiments of this disclosure may be combined in the same or similar manner with one or more other embodiments, combined with features in other embodiments, or substituted for corresponding features in other embodiments. Such combinations or substitutions should also be considered as including within the scope of protection of this disclosure.

[0066] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure.

Claims

1. A method for cleaning a silicon carbide electrode, characterized in that, The method includes: A vertically placed silicon carbide electrode with multiple through holes is cleaned using a cleaning solution containing an corrosive agent. The through holes extend axially along the silicon carbide electrode, and a film layer is formed on the surface of the silicon carbide electrode and on the inner wall forming the through holes. The silicon carbide electrode is moved so that its surface forms an angle with the vertical direction, and then the silicon carbide electrode is cleaned with a cleaning solution containing an etchant.

2. The method for cleaning silicon carbide electrodes according to claim 1, characterized in that, The silicon carbide electrode is moved after cleaning the vertically placed silicon carbide electrode.

3. The method for cleaning silicon carbide electrodes according to claim 1, characterized in that, After the silicon carbide electrode is moved, the surface of the silicon carbide electrode is perpendicular to the vertical direction.

4. The method for cleaning silicon carbide electrodes according to claim 1, characterized in that, The silicon carbide electrode is then moved and cleaned by rinsing.

5. The method for cleaning silicon carbide electrodes according to claim 4, characterized in that, The outflow rate of the flushing fluid is greater than the flow rate of the cleaning fluid flowing within the through hole.

6. The method for cleaning a silicon carbide electrode according to claim 5, characterized in that, The outflow rate is greater than 20 L / min.

7. The method for cleaning silicon carbide electrodes according to claim 1, characterized in that, The cleaning solution is a solution containing hydrofluoric acid.

8. The method for cleaning a silicon carbide electrode according to claim 7, characterized in that, The cleaning solution contains 5-15% hydrofluoric acid (VOL).

9. A cleaning device, characterized in that, For cleaning silicon carbide electrodes, the cleaning equipment includes: The first cleaning unit cleans a vertically placed silicon carbide electrode with multiple through holes using a cleaning solution containing an corrosive agent. The through holes extend axially along the silicon carbide electrode, and a film layer is formed on the surface of the silicon carbide electrode and on the inner wall forming the through holes. The second cleaning unit uses a cleaning solution containing corrosive agents to clean the silicon carbide electrode whose surface forms an angle with the vertical direction.

10. The cleaning equipment according to claim 9, characterized in that, The second cleaning unit includes: The shell, and The outlet pipe is installed inside the housing and outputs a cleaning solution containing a corrosive agent to the surface of the silicon carbide electrode fixed inside the housing during cleaning. The surface of the silicon carbide electrode has an angle with the vertical direction.

11. The cleaning equipment according to claim 10, characterized in that, The cleaning equipment also includes: The controller controls the flow rate of the liquid outlet pipe so that the flow rate of the cleaning fluid is greater than the flow rate of the cleaning fluid flowing through the through hole of the silicon carbide electrode.

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