Method for producing anti-glare glass and anti-glare glass

Abstract

The application relates to a preparation method of anti-glare glass and the anti-glare glass. The method comprises the following steps: providing a glass substrate; forming a transition layer on a processing surface of the glass substrate; forming a photoresist layer on a side surface of the transition layer away from the glass substrate; performing a patterning treatment on the photoresist layer by using a preset photo mask; wherein the photo mask is obtained based on a Lloyd algorithm and design parameters, the design parameters are related to optical performance parameters of the anti-glare glass; performing etching treatment on the transition layer based on the photoresist layer after the patterning treatment; removing the photoresist layer; and performing etching treatment on the glass substrate based on the transition layer after the etching treatment, so as to obtain the anti-glare glass. By using the method, the anti-glare glass with good optical performance can be prepared.

Description

Technical Field

[0001] This application relates to the field of anti-glare glass technology, and in particular to a method for preparing anti-glare glass and anti-glare glass. Background Technology

[0002] Anti-glare (AG) glass reduces glare and improves display clarity by creating a fine, uneven surface that scatters direct, mirror-reflected light into soft, diffused light. It is widely used in high-end instrument panels, automotive infotainment screens, and commercial display windows.

[0003] However, the optical performance of anti-glare glass in related technologies is insufficient. Summary of the Invention

[0004] Therefore, it is necessary to provide a method for preparing anti-glare glass and an anti-glare glass capable of producing anti-glare glass with good optical performance, in order to address the above-mentioned technical problems.

[0005] In a first aspect, this application provides a method for preparing anti-glare glass, the method comprising:

[0006] Provide glass substrates;

[0007] A transition layer is formed on the processed surface of the glass substrate;

[0008] A photoresist layer is formed on the surface of the transition layer away from the glass substrate;

[0009] The photoresist layer is patterned using a preset photomask; wherein the photomask is designed based on the Lloyd algorithm and design parameters, the design parameters including at least a dot pitch range and a dot width range; the dot pitch range and the dot width range are related to the optical performance parameters of the anti-glare glass; the photomask includes multiple spaced Thiessen polygons, the dot pitch range is used to indicate the range of distances between the seed points of two adjacent Thiessen polygons, and the dot width range is used to indicate the range of distances between any two vertices of the Thiessen polygons;

[0010] The transition layer is etched based on the patterned photoresist layer.

[0011] Remove the photoresist layer;

[0012] The glass substrate is etched based on the transition layer after the etching process to obtain anti-glare glass.

[0013] In some embodiments, the optical performance parameters include flash point value, image sharpness, and diffusion; wherein,

[0014] The flash point value is inversely correlated with the point distance range and positively correlated with the point width range;

[0015] The image sharpness is positively correlated with the dot pitch range and negatively correlated with the dot width range;

[0016] The diffusion property is inversely correlated with the point distance range and positively correlated with the point width range.

[0017] In some embodiments, the photomask design method includes:

[0018] The design parameters are obtained based on the preset optical performance parameters of the anti-glare glass and the preset performance parameter database; the performance parameter database is used to store the correspondence between the optical performance parameters of the anti-glare glass and the design parameters of the photomask.

[0019] Based on the design parameters and the Lloyd algorithm, obtain the design pattern of the photomask;

[0020] The photomask is fabricated according to the design pattern of the photomask.

[0021] In some embodiments, prior to etching the glass substrate based on the etched transition layer, the method further includes:

[0022] The target etching parameters are obtained based on the optical performance parameters of the anti-glare glass and the performance parameter database; wherein, the performance parameter database is also used to store the correspondence between the optical performance parameters of the anti-glare glass and the target etching parameters;

[0023] The etching process on the glass substrate based on the transition layer after the etching process includes:

[0024] The glass substrate is etched according to the target etching parameters.

[0025] In some embodiments, the target etching parameters include a first etching parameter and a second etching parameter, and the etching process of the glass substrate according to the target etching parameters includes:

[0026] Based on the transition layer after the etching process, the glass substrate is subjected to a first etching process using an etching solution according to the first etching parameters.

[0027] Remove the transition layer;

[0028] According to the second etching parameters, the glass substrate after the first etching process is subjected to a second etching process using an etching solution.

[0029] In some embodiments, the etching solution includes at least one of sodium hydroxide solution, potassium hydroxide solution, or tetramethylammonium hydroxide.

[0030] In some embodiments, the material of the transition layer includes at least chromium and / or chromium oxide.

[0031] In some embodiments, the thickness of the transition layer is 100nm~120nm.

[0032] In some embodiments, the thickness of the photoresist layer is 2 μm to 2.5 μm.

[0033] Secondly, this application provides an anti-glare glass, which is prepared using the anti-glare glass preparation method described in any of the above embodiments.

[0034] The above-mentioned method for preparing anti-glare glass and the anti-glare glass itself can / at least have the following beneficial effects:

[0035] The photomask is designed based on the Lloyd algorithm and design parameters such as dot pitch range and dot width range. The dot pitch range and dot width range are directly related to the final optical performance parameters of the anti-glare glass, realizing a quantitative mapping from design parameters to optical performance. The photomask is composed of multiple spaced Voronoi polygons. The dot pitch range controls the distance range between two adjacent Voronoi polygon seed points, and the dot width range controls the straight-line distance range between any two vertices of a single Voronoi polygon. The uniform randomness of the Lloyd algorithm can make the distribution of the generated seed points both uniform and random, avoiding the strict periodicity and repetition of regular arrays. Moreover, the Voronoi polygon structure itself does not have a fixed period and phase, and naturally has long-range disorder. Therefore, by controlling the dot pitch and dot width range, this application can accurately control the degree of disorder of the Voronoi polygon microstructure, maximizing the elimination of diffraction and interference effects while ensuring overall uniformity. Therefore, the anti-glare glass prepared based on the photomask of this application has good optical performance. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the drawings used in the description of the embodiments of this application or related technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1 This is a schematic flowchart of a method for preparing anti-glare glass in one embodiment;

[0038] Figure 2This is a cross-sectional schematic diagram of the structure obtained in step S101 of the method for preparing anti-glare glass provided in one embodiment;

[0039] Figure 3 This is a cross-sectional schematic diagram of the structure obtained in step S102 of the method for preparing anti-glare glass provided in one embodiment;

[0040] Figure 4 This is a cross-sectional schematic diagram of the structure obtained in step S103 of the method for preparing anti-glare glass provided in one embodiment;

[0041] Figure 5 This is a cross-sectional schematic diagram of the structure obtained in step S104 of the method for preparing anti-glare glass provided in one embodiment;

[0042] Figure 6 This is a cross-sectional schematic diagram of the structure obtained in step S105 of the method for preparing anti-glare glass provided in one embodiment;

[0043] Figure 7 This is a cross-sectional schematic diagram of the structure obtained in step S106 of the method for preparing anti-glare glass provided in one embodiment;

[0044] Figure 8 This is a cross-sectional schematic diagram of the structure obtained in step S107 of the method for preparing anti-glare glass provided in one embodiment;

[0045] Figure 9 This is a flowchart illustrating a photomask design method provided in one embodiment;

[0046] Figure 10 This is a schematic diagram illustrating the generation of an initial random graphic based on the Lloyd algorithm, the number of seed points, and the range of point distances in one embodiment.

[0047] Figure 11 This is a schematic diagram illustrating the optimization of an initial random pattern based on the number of iterations and a random perturbation factor, provided in one embodiment.

[0048] Figure 12 A schematic diagram illustrating the boundary continuity processing, generation of a complete Voronoi polygon mesh, and inward shrinking of polygon cells for an initial random graphic optimized by the number of iterations provided in one embodiment.

[0049] Figure 13 This is a flowchart illustrating step S107 provided in one embodiment;

[0050] Figure 14 This is a cross-sectional schematic diagram of the structure obtained in step S1001 of the method for preparing anti-glare glass provided in one embodiment;

[0051] Figure 15This is a cross-sectional schematic diagram of the structure obtained in step S1002 of the method for preparing anti-glare glass provided in one embodiment;

[0052] Figure 16 This shows the design parameters and corresponding photomask patterns for Mask1 in one embodiment.

[0053] Figure 17 This is a graph showing the measurement results of the optical performance parameters of an anti-glare glass based on Mask1 design in one embodiment;

[0054] Figure 18 This shows the design parameters and corresponding photomask patterns for Mask2 in one embodiment.

[0055] Figure 19 This is an enlarged view of the design graphics corresponding to the DOE4 scheme in the Mask2 design in one embodiment;

[0056] Figure 20 This is a schematic diagram of the parameter set for etching an anti-glare glass based on Mask2 design in one embodiment;

[0057] Figure 21 This shows the design parameters and corresponding photomask patterns for Mask3 in one embodiment.

[0058] Figure 22 This is an enlarged view of the design graphics corresponding to the DOE1 scheme in the Mask3 design in one embodiment;

[0059] Figure 23 This is a schematic diagram of the parameter set for etching an anti-glare glass based on Mask3 design in one embodiment;

[0060] Figure 24 This shows the design parameters and corresponding photomask patterns for Mask4 in one embodiment.

[0061] Figure 25 This is an enlarged view of the design graphics corresponding to the DOE1 scheme in the Mask4 design in one embodiment;

[0062] Figure 26 This is a schematic diagram of the parameter set for etching an anti-glare glass based on Mask4 design in one embodiment;

[0063] Figure 27 This is a graph showing the measurement results of the optical performance parameters of an anti-glare glass based on Mask4 design in one embodiment. Detailed Implementation

[0064] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0065] Anti-glare (AG) glass reduces glare and improves display clarity by creating a fine, uneven surface that scatters direct specular reflection into diffuse light. This is achieved through the formation of micro-textures on the surface. AG glass is widely used in high-end instrument panels, automotive infotainment screens, and commercial display windows. Currently, the main technologies for achieving the AG effect include the following methods.

[0066] First, the spray etching method involves spraying a paste or atomized liquid containing etchants such as hydrogen fluoride onto the glass surface to chemically etch and create a rough surface. This method is simple and low-cost, but it suffers from poor precision in controlling parameters such as haze and gloss, poor uniformity, and is prone to producing "glare" and rainbow patterns (interference fringes), and also poses environmental risks.

[0067] Second, the single-sided / double-sided integral etching method involves immersing the entire glass in an etching solution. While it offers better uniformity than spraying, the morphology of the AG structure (such as slope, depth, and distribution) is difficult to precisely control, making fine patterning impossible. Furthermore, improvements in optical performance, such as clarity and anti-glare capabilities, are limited.

[0068] Third, physical mechanical etching involves using a high-speed jet of tiny abrasive particles (such as alumina and silicon carbide) to impact and wear the glass surface, thereby forming a microscopic, irregular concave-convex structure that achieves diffuse reflection of light and thus provides an anti-glare effect. However, its uniformity and consistency are difficult to control, and it is easy to form water ripples.

[0069] Fourth, photolithography AG technology (micro / nano imprinting / photolithography). The core of photolithography AG technology is to use semiconductor photolithography to prepare a preset microstructure pattern on a photoresist layer on the surface of a glass substrate, and then transfer the pattern to the glass body through etching. This method can precisely control the microstructure and achieve better optical performance. Photolithography AG solutions in related technologies often use regular periodic pattern designs, such as square, hexagonal, and circular microlens arrays. Exposure, development, and etching are performed through a mask to form an ordered arrangement of microstructures.

[0070] Although existing photolithography AG technology represents a significant advancement over other methods for fabricating AG glass, the following issues still urgently need to be addressed in applications that pursue ultimate optical performance and visual experience:

[0071] First, there is a contradiction between optical performance and process efficiency. To achieve specific levels of haze, gloss, and clarity, complex optical design and multiple exposures and etching process adjustments are often required, which increases process complexity and cost.

[0072] Secondly, the optical defects brought about by "regular arrays" are primarily diffraction and interference issues. Regular, periodic microstructure arrays are prone to producing diffraction spots and significant rainbow patterns under specific lighting angles, especially on pixelated displays, where they can cause moiré interference with the pixel grid, severely interfering with visual perception. Secondly, there is the problem of visible "splicing lines." On large areas of glass, photomask patterns typically require repeated exposures. Regular arrays are prone to producing visible splicing marks at the splicing boundaries due to alignment misalignment or discontinuities in pattern phase, affecting aesthetics and uniformity.

[0073] Third, the graphic design is simple and lacks randomness. The "random" effect in related technologies is mostly limited to slight changes in unit size or simple displacement. The overall randomness of the distribution is low and it cannot fundamentally break the long-range order. Therefore, the effect on eliminating diffraction and interference is limited.

[0074] Fourth, the visual experience needs optimization. The regular microlens array may produce overly uniform scattering, resulting in an unnatural sparkle effect or unsightly highlight spots under strong light.

[0075] To address the above technical problems, please refer to some exemplary embodiments. Figure 1 This application provides a method for preparing anti-glare glass, the method comprising steps S101 to S107.

[0076] S101: Provides a glass substrate.

[0077] Please see Figure 2 In some examples, the glass substrate 10 may include, but is not limited to, soda-lime silicate glass, aluminosilicate glass, or borosilicate glass.

[0078] S102: A transition layer is formed on the processing surface of the glass substrate.

[0079] Please see Figure 3 In applications, the material of the transition layer 20 may include, but is not limited to, chromium or chromium oxide. The formation process of the transition layer 20 may include, but is not limited to, vapor deposition, for example, physical vapor deposition (PVD). The thickness of the transition layer 20 may be 100 nm to 120 nm.

[0080] In some examples, the material of the transition layer 20 can be chromium. Metallic chromium has extremely high optical density and opacity, as well as excellent resistance to alkali corrosion. Through the transition layer 20, a preset pattern can be transferred onto the glass substrate 10.

[0081] S103: A photoresist layer is formed on the surface of the transition layer away from the glass substrate.

[0082] Please see Figure 4 The photoresist layer 30 can be photoresist. Photoresist, also known as photoresist, is an etch-resistant thin film material whose solubility changes upon irradiation or radiation such as ultraviolet light, electron beams, ion beams, and X-rays. In some examples, the thickness of the photoresist layer 30 can be 2µm to 2.5µm.

[0083] In applications, after photoresist is coated onto the surface of the glass substrate 10 with the transition layer 20, the glass substrate 10 coated with the photoresist layer 30 can be pre-baked using an oven. In some examples, a tunnel oven can be used for baking, with baking conditions of 95°C to 105°C for 5 to 8 minutes. Pre-baking removes most of the solvent from the photoresist, allowing it to form a solid film and increasing its adhesion to the glass surface.

[0084] S104: The photoresist layer is patterned using a preset photomask; wherein, the photomask is designed based on the Lloyd algorithm and design parameters, the design parameters including at least the dot pitch range and the dot width range; the dot pitch range and the dot width range are related to the optical performance parameters of the anti-glare glass; the photomask includes multiple spaced Thiessen polygons, the dot pitch range is used to indicate the range of distances between the seed points of two adjacent Thiessen polygons, and the dot width range is used to indicate the range of distances between any two vertices of the Thiessen polygons.

[0085] In this process, after patterning the photoresist layer 30 using a preset photomask, the following can be obtained: Figure 5 The structure is shown. In some examples, a preset photomask can be used, and a single exposure can be performed using a contact exposure machine with an exposure energy of 360 mJ / cm². 2 ~380mJ / cm 2 Next, the exposed glass substrate 10 can be placed in a developing solution for development. Development removes the exposed portions of the positive photoresist. After development, the photoresist inside the smallest pattern unit is removed, while the photoresist outside the smallest pattern unit is retained. The developing solution can mainly consist of a 3%–8% potassium hydroxide solution, and the development conditions can be 55°C–65°C for 150–210 seconds.

[0086] In this embodiment, the pattern on the preset photomask is a seamless, continuous, and non-periodic pattern generated using the Lloyd algorithm. The Lloyd algorithm, also known as the Forgy algorithm or Lloyd-Forgy algorithm, is a classic iterative method in K-means clustering. The core idea of ​​the Lloyd algorithm is to continuously update the classification of data points and the position of class centers through an iterative process until the convergence condition is met or a preset stopping threshold is reached.

[0087] The photomask generated by this application based on the Lloyd algorithm and preset design parameters includes multiple spaced Thiessen polygons (i.e., the aforementioned smallest graphic unit). The distance between the seed points of two adjacent Thiessen polygons in the photomask conforms to the point spacing range in the preset design parameters, and the range of distances between any two vertices of each Thiessen polygon conforms to the point width range in the preset design parameters.

[0088] It is understood that the design parameters in this application are related to the optical performance parameters of the anti-glare glass to be prepared. In some examples, optical performance parameters include, but are not limited to, flash point, image sharpness, and diffusion. Flash point is a subjective parameter that evaluates the visual noise generated by the interaction between AG glass and display pixels. AG glass is bonded to a standard display screen to display a uniform image, and the intensity and distribution of brightness fluctuations in the image are captured and analyzed to quantify the degree of flash point. Image sharpness (DOI) is quantified by projecting a standard pattern onto the sample surface and analyzing the contrast loss of the reflected image. Diffusion measures the light intensity distribution curve at different angles after light is reflected or projected by the sample to evaluate the scattering (diffusion) ability of light.

[0089] In the embodiments of this application, the flash point value is inversely correlated with the dot pitch range and positively correlated with the dot width range; image sharpness is positively correlated with the dot pitch range and inversely correlated with the dot width range; and diffusion is inversely correlated with the dot pitch range and positively correlated with the dot width range.

[0090] In applications, design parameters may also include the number of seed points, the number of iterations, and the random perturbation factor. Seed points are the initial center points for generating Voronoi cells. The number of seed points directly determines the density of Thiessen polygons per unit area. Within a fixed-area mask region, a higher number of seed points results in smaller individual Thiessen polygons and closer spacing between adjacent polygons; conversely, a lower number of seed points results in larger polygons and greater spacing between adjacent polygons. The number of iterations is a core parameter controlling the uniformity of seed point distribution. Fewer iterations result in a seed point distribution closer to the initial state, with greater cell size variation and poor uniformity. Conversely, more iterations result in seed points closer to a centroid Voronoi distribution, more regular cell size and shape, and better global statistical uniformity. The random perturbation factor refers to the additional controllable random offset added when updating the seed point position in each iteration. In the standard Lloyd algorithm, as the number of iterations increases, the seed point will gradually move to the cell centroid. After adding perturbation, the seed point will make a small random offset near the centroid position, breaking the quasi-periodicity after the algorithm converges and improving the disorder of the graph.

[0091] S105: The transition layer is etched based on the patterned photoresist layer.

[0092] Please see Figure 6 In some examples, after patterning the photoresist layer 30, the transition layer 20 within the smallest patterned unit can be removed using a stripping solution, exposing the glass surface of the smallest patterned unit.

[0093] S106: Remove the photoresist layer.

[0094] Please see Figure 7 In some examples, the photoresist outside the smallest graphic unit can be removed in a sodium hydroxide solution with a content of 8%~12% at 80℃~90℃.

[0095] S107: The glass substrate is etched based on the transition layer after etching to obtain anti-glare glass.

[0096] Please see Figure 8 After etching the transition layer 20 based on the patterned photoresist layer 30, the pattern on the photomask will be displayed on the transition layer 20. Therefore, after etching the glass substrate 10 based on the etched transition layer 20 and removing the transition layer 20, the pattern on the photomask can be transferred to the glass substrate 10, thereby obtaining an anti-glare glass 11 with the expected optical performance.

[0097] The above-mentioned method for preparing anti-glare glass can / at least have the following beneficial effects:

[0098] The photomask is designed based on the Lloyd algorithm and design parameters such as dot pitch range and dot width range. The dot pitch range and dot width range are directly related to the final optical performance parameters of the anti-glare glass, realizing a quantitative mapping from design parameters to optical performance. The photomask is composed of multiple spaced Voronoi polygons. The dot pitch range controls the distance range between two adjacent Voronoi polygon seed points, and the dot width range controls the straight-line distance range between any two vertices of a single Voronoi polygon. The uniform randomness of the Lloyd algorithm can make the distribution of the generated seed points both uniform and random, avoiding the strict periodicity and repetition of regular arrays. Moreover, the Voronoi polygon structure itself does not have a fixed period and phase, and naturally has long-range disorder. Therefore, by controlling the dot pitch and dot width range, this application can accurately control the degree of disorder of the Voronoi polygon microstructure, maximizing the elimination of diffraction and interference effects while ensuring overall uniformity. Therefore, the anti-glare glass prepared based on the photomask of this application has good optical performance.

[0099] In some exemplary embodiments, please refer to Figure 9 The photomask design method includes steps S901 to S903.

[0100] S901: Obtain design parameters based on preset optical performance parameters of the anti-glare glass and preset performance parameter database; the performance parameter database is used to store the correspondence between the optical performance parameters of the anti-glare glass and the design parameters of the photomask.

[0101] In this embodiment, the performance parameter database pre-stores the correspondence between the optical performance parameters (flash point value, image sharpness, diffusion, etc.) of the anti-glare glass and the design parameters (dot pitch range, dot width range, number of seed dots, number of iterations, and random perturbation factor, etc.) of the photomask. When personnel in related technologies prepare anti-glare glass, they can search the performance parameter database based on the optical performance parameters of the anti-glare glass to be prepared to obtain the corresponding design parameters.

[0102] S902: Obtain the design pattern of the photomask based on the design parameters and Lloyd's algorithm.

[0103] Afterwards, the design parameters of the obtained photomask (dot pitch range, dot width range, number of seed points, number of iterations, and random perturbation factor, etc.) can be input into the preset simulation software. The simulation software can use the Lloyd algorithm as the boundary constraint condition to transform the abstract design parameters into a physical layout that meets the requirements. Through the standardized operation of the Lloyd algorithm, it is ensured that the disorder and uniformity of each graphic strictly match the parameter requirements, avoiding random errors in manual drawing, and ensuring the stable implementation of long-range disordered and non-periodic structural characteristics. Finally, a design graphic composed of uniformly randomly distributed Thiessen polygons is generated.

[0104] S903: Prepare a photomask based on the design pattern of the photomask.

[0105] Finally, the design graphics generated by the Lloyd algorithm can be prepared into a physical photomask through precision plate-making processes (such as photolithography, etching of chromium layers, etc.) for use in subsequent photolithographic patterning processes on glass substrates.

[0106] In a detailed embodiment, an initial random pattern is first generated using Lloyd's algorithm based on the number of seed points and the range of point spacing. See also... Figure 10 , Figure 10 Figure (a) in the figure is a schematic diagram of the initial random pattern generated when the number of seed points is 100. Figure 10 Figure (b) in the diagram is a schematic diagram of the initial random pattern generated when the number of seed points is 300. Figure 10 Figure (c) shows a schematic diagram of the initial random pattern generated when the number of seed points is 500. The number of seed points directly determines the microstructure density per unit area; the more points and the smaller the point spacing, the denser the microstructure of the final AG surface. Figure 10 The thin line represents the boundary of Voronoi cells, and each black dot corresponds to a seed point of a cell. In the initial state, the cell size and shape vary greatly, and the distribution is completely random.

[0107] After obtaining the initial random pattern, it can be iterated based on the number of iterations and the random perturbation factor. See also... Figure 11 , Figure 11 Figure (a) in the figure is a schematic diagram of the initial random graph after 500 iterations of optimization. Figure 11 Figure (b) in the figure is a schematic diagram of the initial random graph after 1000 iterations of optimization. Figure 11 Figure (c) shows a schematic diagram of the initial random graph after 2000 iterations of optimization. It can be seen that as the number of iterations increases, the seed point continuously moves towards the cell centroid, and the size and shape of the cells become increasingly regular, with the overall distribution shifting from a chaotic randomness to a statistically uniform quasi-random distribution. The more iterations, the better the distribution uniformity; however, the standard algorithm still exhibits weak quasi-periodicity after convergence. Therefore, this application adds an additional random perturbation factor to further improve the disorder while ensuring uniformity.

[0108] Please refer to the following: Figure 12 Figure (a) shows how to perform boundary continuity processing on the seed points of the initial random pattern after a certain number of iterations, ensuring seamless connection of edge cells during pattern stitching and solving the stitching texture problem in traditional step exposure. Next, please refer to... Figure 12 Figure (b) shows the generation of a complete Voronoi polygon mesh based on seed points, which forms the contour basis for the micro-pits after glass etching. Finally, please refer to... Figure 12 In Figure (c), the polygon cells are shrunk inward to obtain independent Voronoi polygons. The distance between any two vertices of the shrunk Voronoi polygons conforms to the range of point widths. The shrunk Voronoi polygons are the light-transmitting areas of the photomask, and the remaining areas are the light-shielding layers, ultimately forming a photomask pattern that can be used for photolithography exposure.

[0109] In this embodiment, the Lloyd algorithm is used as the core. First, a highly randomized initial seed point distribution is generated. This initial randomness helps ensure that the final pattern lacks any regular array fundamental frequency, thus eliminating the physical basis for diffraction and systematic moiré fringes. Through iterative rules, while maintaining randomness, optimal spatial filling uniformity is achieved, breaking long-range order and fundamentally suppressing diffraction. Furthermore, the algorithm generates a continuous, boundary-free overall pattern. When preparing large-area photomasks or for exposure, the algorithm ensures the continuity of the overall distribution, achieving a large-area AG surface with "completely seamless stitching." Simultaneously, the non-periodic structure makes the direction and intensity distribution of scattered light more natural and softer, resulting in excellent flash effects and minimal rainbow patterns. Moreover, the Thiessen polygon units themselves possess excellent optical scattering characteristics; by adjusting the algorithm parameters, preset optical performance indicators can be directly met during the pattern design stage.

[0110] In some exemplary embodiments, before etching the glass substrate based on the transition layer after etching, the method for preparing the anti-glare glass of this application further includes the step of obtaining target etching parameters based on the optical performance parameters of the anti-glare glass and a performance parameter database. The performance parameter database is further used to store the correspondence between the optical performance parameters of the anti-glare glass and the target etching parameters, wherein the target etching parameters include a first etching parameter and a second etching parameter.

[0111] Step S107 involves etching the glass substrate based on the transition layer after etching, including: etching the glass substrate according to the target etching parameters. For details, please refer to [link to relevant documentation]. Figure 13 Step S107 includes steps S1301 to S1303.

[0112] S1301: Based on the transition layer after etching, the glass substrate is etched for the first time using an etching solution according to the first etching parameters.

[0113] Please see Figure 14After etching the transition layer 20 based on the patterned photoresist layer 30, the pattern on the photomask will be displayed on the transition layer 20. Therefore, the patterned transition layer 20 can be used as a mask to etch the glass substrate according to the first etching parameters, so as to accurately transfer the Thieson polygon pattern of the mask, etch the basic outline of the concave and convex structure on the glass surface, and define the planar dimensions and initial depth of the microstructure.

[0114] In some examples, the etching solution includes at least one of sodium hydroxide solution, potassium hydroxide solution, or tetramethylammonium hydroxide. For example, the etching solution for the first etching treatment may be a 50% sodium hydroxide solution, at a temperature of 120°C, with an etching depth of 2µm to 3.5µm, preferably 3µm.

[0115] S1302: Remove the transition layer.

[0116] Please see Figure 15 Once the first etching step is completed, the transition layer 20, which serves as a mask, can be completely removed, exposing all glass surfaces formed by the first etching step.

[0117] S1303: According to the second etching parameters, the glass substrate after the first etching process is etched a second time using an etching solution.

[0118] Next, without masking, the entire glass substrate is etched. The steep sidewalls formed in the first step are smoothed, sharp edges are blunted, and the aspect ratio and surface curvature of the microstructure are adjusted to obtain a soft-looking three-dimensional microstructure. After the second etching, the processed surface of the glass substrate 10 exhibits a more random structure, thus forming the anti-glare glass 11. The concentration of the etching solution in the second etching can be the same as that in the first etching, and the etching time needs to be determined based on the expected surface features. For example, the etching solution for the second etching process can be a 50% sodium hydroxide solution, the temperature can be 120°C, and the etching depth can be 10µm to 30µm, preferably 20µm.

[0119] In some exemplary embodiments, in addition to determining the design parameters of the photomask through a performance parameter database, this application can also design the photomask based on preset initial design parameters (such as the initial dot width range, initial dot pitch range, initial seed point number, initial iteration count, and initial random perturbation factor, etc.) and the Lloyd algorithm. Here, the initial design parameters are those parameter values ​​that, after preliminary optical verification (flash point value less than 1.5, image clarity of 30~60, and diffusion greater than 20), meet the relatively basic optical property requirements.

[0120] First, the Mask1 design steps were performed. This application designed 16 sets of experiments with different initial dot spacing and initial dot width ranges. Among them, four sets had initial dot width ranges of 6um~10um, 10um~14um, 15um~19um, and 19um~22um, and the initial dot spacing range was 7um~16um. For details, please refer to [link / reference needed]. Figure 16 .in, Figure 16 , Figure 18 , Figure 20 and Figure 22 In the design drawings corresponding to each DOE, the black content represents dimension markers. For an example, please refer to [link to relevant documentation]. Figure 19 , Figure 22 and Figure 25 , Figure 19 for Figure 18 Enlarged view of the design drawing corresponding to the DOE4 scheme. Figure 22 for Figure 21 Enlarged view of the design drawing corresponding to the DOE1 scheme (dot width range 5um~9um, dot pitch range 15um~17um). Figure 25 for Figure 24 An enlarged view of the design drawing corresponding to the DOE1 scheme shows that... Figure 19 , Figure 22 and Figure 25 The text indicates the point width of some Thiessen polygons and the point distance between some adjacent Thiessen polygons.

[0121] Afterwards, based on Figure 16 Each pattern obtained in the process is used to design a mask, and a chrome-plated glass substrate is then placed on it. Figure 16 The images obtained were exposed in the corresponding photomasks, and after development and etching, a series of AG-effect glasses were obtained. Their main optical performance indicators were measured, and the optical performance indicators of each AG glass are as follows: Figure 17 As shown.

[0122] from Figure 17 It can be seen that as the amount of etching removal increases (within a certain range, before adjacent patterns merge), the diffusion tends to increase. The photomask design can meet the relevant optical properties, but there are regular moiré patterns, which need to be optimized (the randomness of the pattern is improved, but the evaluation has an impact on the flash point). After the first experiment, the photomask design with better optical performance parameters (i.e., after the first optimization of the initial dot width range and the initial dot pitch range) has a dot width range of 6um~19um and a dot pitch range of 11um~19um.

[0123] The above experiments showed that the prepared AG glass surface had obvious regular moiré patterns. Although the algorithm itself is non-periodic, the randomness "entropy" of the initial seed point set is insufficient, or unwanted implicit rules are introduced during the iteration process. For example, the initial seed point distribution is too uniform, and the number of iterations is insufficient, resulting in incomplete relaxation to the non-periodic stable state. This leaves a weak long-range order in the pattern, and the pixel array interferes, producing moiré patterns.

[0124] To address the aforementioned issues, eliminate moiré patterns, and optimize the balance between rainbow patterns, flash points, and diffusion uniformity, this application employs a Mask2 design step. By reducing the dot width and increasing the dot spacing, the feature size of the graphic unit is reduced to be much smaller than the human eye's resolution limit, fundamentally weakening the physical basis for interference. The initial dot width and initial dot spacing ranges are optimized, and the algorithm's randomness is enhanced by adding a stronger random perturbation factor to ensure higher disorder in the output graphic. This application further designed 16 sets of experiments with different dot widths and spacings. The optimized dot width ranges are 6µm~10µm, 9µm~13µm, 12µm~16µm, and 15µm~19µm, with a dot spacing range of 11µm~19µm. For details, see [link to specific scheme]. Figure 18 .

[0125] Afterwards, based on Figure 18 Each pattern obtained in the process is used to design a mask, and a chrome-plated glass substrate is then placed on it. Figure 18 Expose the corresponding masks for each pattern obtained in the process, and verify the schemes with different etching amounts. For the etching amount schemes, please refer to [link to relevant documentation]. Figure 20 In this context, "Etching 1" refers to the parameters for the first etching process of the glass substrate using an etching solution, and "Etching 2" refers to the parameters for the second etching process of the glass substrate using an etching solution.

[0126] In Adoption Figure 20 After etching the glass substrate using various etching methods, the optical performance indicators of the AG glass were measured. It was found that, at the same dot width, the rainbow pattern gradually deepened with increasing dot spacing. The rainbow pattern was weakest when etch one was greater than 2µm and etch two was greater than 16µm. The greater the undulation of the "ridges" formed by the pattern merging, the weaker the rainbow pattern. It can be understood that the reduced size and increased randomness of the Thiessen polygon units resulted in more dispersed and uniform light scattering, directly manifesting as a lower flash point and enhanced diffusion. The rainbow pattern was improved due to the further disruption of its periodicity, but a hazy, mottled defect appeared in the pattern appearance, indicating that the rainbow pattern needs further optimization.

[0127] Furthermore, this application focuses on addressing the issue of mottled appearance defects and verifying the adaptability of the graphic design to different etching amounts. "Mottled defects" typically manifest as uneven haze or gloss in localized areas. At the algorithm level, uneven distribution of local dot density leads to microscopically sparse and dense regions. During etching, the difference in local density of the graphic results in different etchant exchange rates, thus causing variations in etching rate. This application further optimizes the design parameters and performs a Mask3 design step to improve the uniformity of pattern size, mitigating the problem of excessively large flash points after etching due to significant pattern variations (target: Spakle < 1.5). Sixteen sets of experiments with different dot pitch and width were designed, including four sets with dot widths ranging from 5um to 9um, 6um to 10um, 7um to 11um, and 8um to 12um, and dot pitches ranging from 15um to 23um. Specific details can be found in [reference needed]. Figure 21 Different etching amounts were used to verify the solutions; details can be found in [reference needed]. Figure 23 .

[0128] After optical performance testing, DOE1 was found to have the optimal etching parameters (Etching 1: 2.8um~3um, Etching 2: 15um), and these parameters were used as the final etching parameters. Based on a comprehensive comparison of the optical performance and appearance of the 16 patterns, pattern number 4 (dot width range: 5um~9um, dot pitch range: 21um~23um) exhibited the slightest rainbow effect and met optical performance standards, with a sparkle range of 1.2~1.4.

[0129] Subsequently, to completely resolve the mottled defects and achieve a balance between excellent optical performance and a good visual appearance, this application employs the Mask4 design step, designing nine sets of experiments with different dot widths and pitches. The dot width ranges from 5µm to 9µm, and the dot width ranges from 21µm to 23µm. The Lloyd algorithm is optimized (including, but not limited to, optimizing the number and distribution of seed dots to ensure absolutely uniform spatial distribution statistical characteristics of dots throughout the entire region, avoiding any macroscopic clusters or sparse areas; adjusting the iteration rules of Lloyd's relaxation to avoid generating excessively long or distorted cells, as abnormal shapes may cause abnormal light scattering or process fluctuations during etching). This further improves the uniformity of pattern size, mitigating the mottled appearance problem caused by pattern design. For details, see [link to specific solutions]. Figure 22 Among them, the parameters of Lloyd's algorithm differ at least partially in each algorithm (Algorithm 1-1 to Algorithm 2-5). Schemes with different etching depths were verified, with etching depths of 3µm and 5µm for Algorithm 1, and 15µm, 20µm, 25µm, and 30µm for Algorithm 2, as shown below. Figure 26 As shown.

[0130] Finally, the AG glass fabricated in the Mask4 design step was subjected to optical performance verification, and the results are as follows: Figure 27As shown, the average sparkle value is 1±0.1um, the DOI size is around 20, and the diffusion is greater than 40. It effectively resolves the contradiction between optical performance and process efficiency, and only requires a single exposure. Different etching processes can achieve ideal optical results, reducing process complexity and cost, reducing diffraction spots and significant rainbow patterns, reducing visual interference, and eliminating splicing traces at the splicing boundary. It achieves a unity of aesthetics and uniformity, with high randomness in the overall distribution, fundamentally breaking long-range order. Therefore, it has a significant effect on eliminating diffraction and interference, and the sparkle effect is natural with small brightness fluctuations.

[0131] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0132] In some exemplary embodiments, this application provides an anti-glare glass, which is prepared using the anti-glare glass preparation method described in any of the above embodiments.

[0133] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this application.

[0134] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A method for preparing anti-glare glass, characterized in that, The method includes: Provide glass substrates; A transition layer is formed on the processed surface of the glass substrate; A photoresist layer is formed on the surface of the transition layer away from the glass substrate; The photoresist layer is patterned using a preset photomask; wherein the photomask is designed based on the Lloyd algorithm and design parameters, the design parameters including at least a dot pitch range and a dot width range; the dot pitch range and the dot width range are related to the optical performance parameters of the anti-glare glass; the photomask includes multiple spaced Thiessen polygons, the dot pitch range is used to indicate the range of distances between the seed points of two adjacent Thiessen polygons, and the dot width range is used to indicate the range of distances between any two vertices of the Thiessen polygons; The transition layer is etched based on the patterned photoresist layer. Remove the photoresist layer; The glass substrate is etched based on the transition layer after the etching process to obtain the anti-glare glass.

2. The method for preparing anti-glare glass according to claim 1, characterized in that, The optical performance parameters include flash point value, image sharpness, and diffusion; among which... The flash point value is inversely correlated with the point distance range and positively correlated with the point width range; The image sharpness is positively correlated with the dot pitch range and negatively correlated with the dot width range; The diffusion property is inversely correlated with the point distance range and positively correlated with the point width range.

3. The method for preparing anti-glare glass according to claim 1, characterized in that, The method for designing the photomask includes: The design parameters are obtained based on the preset optical performance parameters of the anti-glare glass and the preset performance parameter database; the performance parameter database is used to store the correspondence between the optical performance parameters of the anti-glare glass and the design parameters of the photomask. Based on the design parameters and the Lloyd algorithm, obtain the design pattern of the photomask; The photomask is fabricated according to the design pattern of the photomask.

4. The method for preparing anti-glare glass according to claim 3, characterized in that, Before etching the glass substrate based on the transition layer after the etching process, the method further includes: The target etching parameters are obtained based on the optical performance parameters of the anti-glare glass and the performance parameter database; wherein, the performance parameter database is also used to store the correspondence between the optical performance parameters of the anti-glare glass and the target etching parameters; The etching process on the glass substrate based on the transition layer after the etching process includes: The glass substrate is etched according to the target etching parameters.

5. The method for preparing anti-glare glass according to claim 4, characterized in that, The target etching parameters include a first etching parameter and a second etching parameter. The etching process of the glass substrate according to the target etching parameters includes: Based on the transition layer after the etching process, the glass substrate is subjected to a first etching process using an etching solution according to the first etching parameters. Remove the transition layer; According to the second etching parameters, the glass substrate after the first etching process is subjected to a second etching process using an etching solution.

6. The method for preparing anti-glare glass according to claim 5, characterized in that, The etching solution includes at least one of sodium hydroxide solution, potassium hydroxide solution, or tetramethylammonium hydroxide.

7. The method for preparing anti-glare glass according to claim 1, characterized in that, The material of the transition layer includes at least chromium and / or chromium oxide.

8. The method for preparing anti-glare glass according to claim 1, characterized in that, The thickness of the transition layer is 100nm~120nm.

9. The method for preparing anti-glare glass according to claim 1, characterized in that, The thickness of the photoresist layer is 2μm~2.5μm.

10. An anti-glare glass, characterized in that, It is prepared by the method of any one of claims 1-9 for preparing anti-glare glass.

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