Substrate processing method, method for manufacturing semiconductor device, program product, and substrate processing apparatus

Abstract

The present application provides a substrate processing method, a semiconductor device manufacturing method, a program product, and a substrate processing apparatus, capable of controlling an easily-etchable portion and a difficultly-etchable portion. The substrate processing method of the present application includes: step a, supplying a conditioning gas to a first space of a substrate having a recess formed on a surface while making the pressure in the first space a first pressure; and step b, supplying an etching gas to the first space after step a, and making the pressure in the first space less than the first pressure during a low-pressure period during at least a part of step b.

Description

Technical Field

[0001] This disclosure relates to a substrate processing method, a method for manufacturing a semiconductor device, a process product, and a substrate processing apparatus. Background Technology

[0002] As part of the manufacturing process of semiconductor devices, sometimes a portion of the material on the substrate is etched (see, for example, Patent Document 1).

[0003] Patent Document 1: International Publication No. 2024 / 069683 Summary of the Invention

[0004] This disclosure provides a technique for controlling areas that are easy to etch and areas that are difficult to etch.

[0005] According to one aspect of this disclosure, a technique is provided, comprising: step a, supplying a regulating gas into a first space disposed on a substrate having recesses formed on its surface, and making the pressure in the first space a first pressure; step b, after step a, supplying an etching gas into the first space, and making the pressure in the first space less than the first pressure during a low-pressure period, which is at least a part of step b.

[0006] According to this disclosure, it is possible to control which parts are easy to etch and which are difficult to etch. Attached Figure Description

[0007] Figure 1 This is a schematic diagram illustrating the general structure of the substrate processing apparatus according to the first embodiment.

[0008] Figure 2 This is a flowchart illustrating the substrate processing in the first embodiment.

[0009] Figure 3 This is a flowchart illustrating the film-forming process in the first embodiment.

[0010] Figure 4 This is a flowchart illustrating the etching process in the first embodiment.

[0011] Figure 5 (A) in the diagram is a schematic diagram of the process of forming the membrane in the filling recess in the comparative example. Figure 5 (B) is a schematic diagram of the process of forming a membrane in the filling recess in the first embodiment.

[0012] Figure 6 It is a graph showing the change in pressure inside the processing chamber during the etching process of the first embodiment.

[0013] Figure 7(A) in the figure is another example of the pressure change in the processing chamber during the etching process of the first embodiment. Figure 7 (B) is a graph showing another example of the pressure change in the processing chamber during the etching process of the first embodiment.

[0014] Figure 8 This is a flowchart illustrating the operation of the substrate processing apparatus according to the second embodiment.

[0015] Figure 9 This is a schematic diagram illustrating the substrate processing apparatus of the third embodiment.

[0016] Figure 10 This is a schematic structural diagram of the controller of the substrate processing apparatus according to the first embodiment, and a diagram showing the control system of the controller in block form. Detailed Implementation

[0017] Hereinafter, one or more embodiments will be described with reference to the accompanying drawings. Although the drawings illustrate embodiments based on the principles of this disclosure, these embodiments are for understanding the disclosure only and are not intended to limit the disclosure in any way. The descriptions in this specification are merely typical illustrations and do not limit the scope of patent protection or application of this disclosure in any sense. The drawings are illustrative, and the dimensional relationships and ratios of the elements shown may not necessarily correspond to reality. Furthermore, the dimensional relationships and ratios of the elements may not be consistent between different drawings.

[0018] In this embodiment, the description has been provided in sufficient detail by those skilled in the art for the purpose of implementing this disclosure. However, other installations and methods may also be used. It should be understood that structural and constructional changes and substitutions of various elements can be made without departing from the scope and spirit of the technical concept of this disclosure. Therefore, the following description is not intended to be limited thereto.

[0019] The following explains the meaning of the terms used in this specification.

[0020] In this specification, "performing a treatment (or process, cycle, step, etc.) a predetermined number of times" means performing the treatment, etc., once or more. That is, it means performing the treatment more than once. The number of treatments performed is appropriately selected based on the required landfill characteristics or membrane thickness in the final formed membrane.

[0021] In this specification, the term "substrate" may refer to "the substrate itself" or to "a laminate (assembly) of the substrate and predetermined layers, films, etc. formed on its surface" (i.e., including the predetermined layers, films, etc. formed on the surface, which are referred to as wafers). Furthermore, when the term "surface of the substrate" is used in this specification, it may sometimes refer to "the surface (exposed surface) of the substrate itself" or "the surface of the predetermined layers, films, etc. formed on the substrate, i.e., the outermost surface of the wafer as a laminate."

[0022] Therefore, when this specification states "supplying a predetermined gas to the substrate," it sometimes means "supplying a predetermined gas directly to the surface (exposed surface) of the wafer itself," and sometimes it means "supplying a predetermined gas to the layer, film, etc. formed on the substrate, i.e., the outermost surface of the wafer as a laminate." Furthermore, when this specification states "forming a predetermined layer (or film) on the substrate," it sometimes means "forming a predetermined layer (or film) directly on the surface (exposed surface) of the substrate itself," and sometimes it means "forming a predetermined layer (or film) on the layer, film, etc. formed on the substrate, i.e., the outermost surface of the substrate as a laminate."

[0023] In this specification, "temperature" refers to the temperature of the substrate being processed, or the temperature of the processing chamber where the substrate is placed. "Pressure" during processing refers to the pressure within the processing chamber. Processing time refers to the duration of the processing. The expression of a numerical range such as "1~2000 Pa" in this specification means that the lower and upper limits are included within that range. Therefore, for example, "1~2000 Pa" means "more than 1 Pa and less than 2000 Pa". The same applies to other numerical ranges, and these will also be the case in the following descriptions.

[0024] [First Implementation Method]

[0025] Figure 1 This is a schematic structural diagram of the vertical processing furnace of the substrate processing apparatus 1000 according to the first embodiment, and it is a longitudinal sectional view of the processing furnace section. Figure 1 As shown, the processing furnace 202 has a heater 207 as a heating mechanism.

[0026] A reaction tube 203 is disposed inside the heater 207. The reaction tube 203 is formed into a cylindrical shape that is closed at the top and open at the bottom. A manifold 209 is disposed below the reaction tube 203. The manifold 209 is formed into a cylindrical shape that is open at both the top and bottom. An O-ring 220a, serving as a sealing member, is provided between the manifold 209 and the reaction tube 203. The reaction tube 203 and the manifold 209 constitute a processing container (reaction container) that serves as a first processing container. A processing chamber 201, serving as a first space, is formed in the hollow portion of the cylindrical part of the processing container. The processing chamber 201 is configured to accommodate a wafer 200, which serves as a substrate. The wafer 200 is processed within this processing chamber 201.

[0027] Inside the processing chamber 201, nozzles 249a to 249c, serving as first to third supply units, are respectively installed through the side wall of the manifold 209. Gas supply pipes 232a to 232e are respectively connected to the nozzles 249a to 249e.

[0028] On gas supply pipes 232a-232e, mass flow controllers (MFCs) 241a-241e (flow controllers, flow control units) and valves 243a-243e (on / off valves) are sequentially installed from the upstream side of the airflow. Gas supply pipes 232f-232j are connected to the downstream side of valves 243a-243e on gas supply pipes 232a-232e. On gas supply pipes 232f-232j, MFCs 241f-241j and valves 243f-243j are sequentially installed from the upstream side of the airflow.

[0029] Nozzles 249a to 249e are respectively provided from the lower part to the upper part of the inner wall of the reaction tube 203 in the space between the inner wall of the reaction tube 203 and the wafer 200. Gas supply holes 250a to 250d for supplying gas are respectively provided on the side of the nozzles 249a to 249e. The gas supply holes 250a to 250d are opened in a manner that faces the exhaust port 231a when viewed from above, so as to supply gas toward the wafer 200. Multiple gas supply holes 250a to 250d are provided from the lower part to the upper part of the reaction tube 203.

[0030] One end of the gas supply pipe 232a is connected to a supply source (not shown) of the raw material gas, which is one of the film-forming gases. The raw material gas introduced from the raw material gas supply source into the gas supply pipe 232a is supplied to the processing chamber 201 via MFC 241a, valve 243a, and nozzle 249a.

[0031] One end of the gas supply pipe 232b is connected to a supply source (not shown) of the reaction gas, which is one of the film-forming gases. The reaction gas introduced from the reaction gas supply source into the gas supply pipe 232c is supplied to the processing chamber 201 via MFC 241b, valve 243b, and nozzle 249b.

[0032] One end of the gas supply pipe 232c is connected to the etching gas supply source (not shown). The etching gas introduced from the etching gas supply source into the gas supply pipe 232c is supplied to the processing chamber 201 via MFC 241c, valve 243c, and nozzle 249c.

[0033] One end of the gas supply pipe 232d is connected to the source of the etching gas (not shown). The first etching gas introduced into the gas supply pipe 232d from the first etching gas source is supplied to the processing chamber 201 via MFC 241d, valve 243d, and nozzle 249c.

[0034] One end of the gas supply pipe 232e is connected to the supply source of the etching gas (not shown). The second etching gas introduced from the second etching gas supply source into the gas supply pipe 232e is supplied into the processing chamber 201 via MFC 241e, valve 243e, and nozzle 249c.

[0035] One end of each of gas supply pipes 232f to 232j is connected to an inert gas supply source (not shown). Inert gas introduced from the inert gas supply source into gas supply pipe 232f is supplied to processing chamber 201 via MFC 241f, valve 243f, and nozzle 249a. Inert gas introduced from the inert gas supply source into gas supply pipe 232g is supplied to processing chamber 201 via MFC 241g, valve 243g, and nozzle 249b. Inert gas introduced from the inert gas supply source into gas supply pipes 232h to 243j is supplied to processing chamber 201 via MFC 241h to 241j, valves 243h to 243j, and nozzle 249c. The inert gas functions as, for example, purge gas, carrier gas, dilution gas, and conditioning gas (described later).

[0036] The primary raw material gas supply system consists of gas supply pipe 232a, MFC 241a, and valve 243a. Alternatively, nozzle 249a and the raw material gas supply source can be included in the raw material gas supply system. The primary reaction gas supply system consists of gas supply pipe 232b, MFC 241b, and valve 243b. Alternatively, nozzle 249b and the reaction gas supply source can be included in the reaction gas supply system. The primary etching gas supply system consists of gas supply pipe 232c, MFC 241c, and valve 243c. Alternatively, nozzle 249c and the etching gas supply source can be included in the etching gas supply system. The primary first etching gas supply system consists of gas supply pipe 232d, MFC 241d, and valve 243d. Alternatively, nozzle 249c and the first etching gas supply source can be included in the first etching gas supply system. The primary second etching gas supply system consists of gas supply pipe 232e, MFC 241e, and valve 243e. Alternatively, the nozzle 249c and the second etching gas supply source can be included in the second etching gas supply system. The inert gas supply system mainly consists of gas supply pipes 232f to 232j, MFC 241f to 241j, and valves 243f to 243j.

[0037] When an inert gas is used as the conditioning gas described later, the inert gas supply system can also be referred to as the conditioning gas supply system. When a film is formed on the wafer 200 using a raw material gas and a reactant gas in the film formation process (step S31) described later, the raw material gas and the reactant gas can also be collectively referred to as film-forming gases. In this case, the raw material gas supply system and the reactant gas supply system can also be collectively referred to as the film-forming gas supply system. Furthermore, as in the second embodiment described later, when the material on the wafer 200 is etched using a first etching gas and a second etching gas, the first etching gas and the second etching gas can also be collectively referred to as etching gases. In this case, the first etching gas supply system and the second etching gas supply system can also be collectively referred to as the etching gas supply system.

[0038] Any one or all of the aforementioned supply systems can also be configured as an integrated supply system 248, which integrates valves 243a-243j, MFCs 241a-241j, etc. The integrated supply system 248 is connected to gas supply pipes 232a-232j respectively, and the supply of various gases to the gas supply pipes 232a-232j, i.e., the opening and closing of valves 243a-243j and the flow adjustment of MFCs 241a-241j, are controlled by the controller 121 described later.

[0039] An exhaust port 231a for venting the atmosphere inside the processing chamber 201 is provided on the lower side wall of the reaction tube 203. The exhaust port 231a is positioned opposite the nozzles 249a-249e (gas supply holes 250a-250e) across the wafer 200. The exhaust port 231a may also be provided from the lower part of the side wall of the reaction tube 203 along the upper part, that is, along the wafer arrangement area. An exhaust pipe 231 is connected to the exhaust port 231a. In the exhaust pipe 231, a pressure sensor 245, which is a pressure detector (pressure detection unit) for detecting the pressure inside the processing chamber 201, and an APC (AutoPressure Controller) valve 244, which is a pressure regulator (pressure adjustment unit), are connected to a vacuum pump 246, which is a vacuum venting device. The APC valve 244 can perform vacuum venting and stop vacuum venting inside the processing chamber 201 by opening and closing the valve while the vacuum pump 246 is operating. Furthermore, with the vacuum pump 246 operating, the valve opening is adjusted based on the pressure information detected by the pressure sensor 245, thereby regulating the pressure within the processing chamber 201. The exhaust system mainly consists of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. Including the vacuum pump 246 within the exhaust system is also an option.

[0040] A sealing cap 219 is provided below the manifold 209 to airtightly seal the lower opening of the manifold 209. An O-ring 220b, serving as a sealing component, is provided on the upper surface of the sealing cap 219 and abuts against the lower end of the manifold 209. A rotation mechanism 267 is provided below the sealing cap 219, which rotates the crystal boat 217 (described later) and the wafer 200 supported by the crystal boat 217 via a rotation shaft 255.

[0041] The sealing cover 219 is raised and lowered vertically by a crystal boat lift 115, which serves as a lifting mechanism. The crystal boat lift 115 is configured as a conveying device (conveyor) that moves the wafer 200 into and out of the processing chamber 201 by raising and lowering the sealing cover 219. A gate 219s is provided below the manifold 209, which can airtightly seal the lower opening of the manifold 209 when the sealing cover 219 is lowered and the crystal boat 217 is removed from the processing chamber 201. An O-ring 220c, which serves as a sealing member, is provided on the upper surface of the gate 219s and abuts against the lower end of the manifold 209. The opening and closing actions (raising and lowering actions, rotating actions, etc.) of the gate 219s are controlled by the gate opening and closing mechanism 115s.

[0042] The crystal boat 217, which serves as a substrate support, is configured to support multiple wafers 200, for example 25 to 200, arranged in a horizontal position and aligned with each other in a vertical direction in multiple layers, i.e., arranged at intervals. At the bottom of the crystal boat 217, multiple layers of heat-insulating plates 218, for example made of heat-resistant materials such as quartz or SiC, are supported.

[0043] A temperature sensor 263, serving as a temperature detector, is installed inside the reaction tube 203. By adjusting the energizing of the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature within the processing chamber 201 is adjusted to achieve the desired temperature distribution. The temperature sensor 263 is disposed along the inner wall of the reaction tube 203.

[0044] As a raw material gas, a gas containing predetermined elements such as tungsten (W), titanium (Ti), molybdenum (Mo), tantalum (Ta), cobalt (Co), yttrium (Y), ruthenium (Ru), hafnium (Hf), zirconium (Zr), aluminum (Al), and silicon (Si) can be used. One or more of these elements can be used as the raw material. Gases activated by plasma or similar means can also be used as raw material gases.

[0045] As a gas containing a predetermined element, for example, a halogen-based gas containing both the predetermined element and a halogen can be used. Examples of halogen-based gases include those containing tungsten hexachloride (WCl6), tungsten hexafluoride (WF6), titanium tetrachloride (TiCl4), titanium tetrafluoride (TiF4), molybdenum pentachloride (MoCl5), molybdenum pentafluoride (MoF5), molybdenum dioxide (MoO2Cl2), molybdenum oxide (MoOCl4), tantalum pentachloride (TaCl5), tantalum pentafluoride (TaF5), cobalt difluoride (CoF2), cobalt difluoride (CoCl2), yttrium trifluoride (YF3), yttrium trichloride (YCl3), ruthenium trichloride (RuCl3), and so on. Gases containing ruthenium fluoride (RuF3), hafnium tetrachloride (HfCl4), zirconium tetrachloride (ZrCl4), zirconium tetrafluoride (ZrF4), aluminum trichloride (AlCl3), aluminum trifluoride (AlF3), dichlorosilane (SiH2Cl2), 1,2-dichlorosilane (Si2H4Cl2), 1,1,1-trichlorosilane (Si2H3Cl3), 1,1,2-trichlorosilane (Si2H3Cl3), pentachlorosilane (Si2HCl5), hexachlorosilane (Si2Cl6), and tetrafluorosilane (SiF4) are also acceptable. Additionally, gases containing the predetermined element, such as silane (SiH4), disilane (Si2H6), propane (Si3H8), and butane (Si4H), can also be used. 10 Gases such as ) and . As a gas containing a predetermined element, one or more of these may be used.

[0046] Furthermore, as a gas containing a predetermined element, for example, a gas containing an organic predetermined element having the predetermined element and an organic ligand can be used. Examples of gases containing an organic predetermined element include those containing hexamethylaminoditungsten (W2[N(CH3)2]6), bis(tert-butylimide)bis(dimethylamide)tungsten ((t-C4H9NH)2W=(Nt-C4H9)2), tetraethylmethylaminotitanium (Ti[N(C2H5)(CH3)]4), bis(ethylcyclopentadienylruthenium) (Ru(EtCp)2), bis(cyclopentadienylruthenium) (Ru(Cp)2), tetraethylmethylaminohafnium (Hf[N(Me)Et]4), tetra(diethylamino)hafnium (Hf[N(Et)2]4), tetraethylmethylaminohafnium (Hf[N(Et)2]4), tetraethyl(diethylamino) ... Gases containing the following elements: (dimethylamino)hafnium (Hf[N(Me)2]4), tris(dimethylamino)cyclopentadienylhafnium ((Cp)Hf[N(Me)2]3), tetra(ethylmethylamino)zirconium (Zr[N(Me)Cp]4), diethylaminozirconium (Zr[N(Et)2]4), tetra(dimethylamino)zirconium (Zr[N(Me)2]4), tris(dimethylamino)cyclopentadienylzirconium ((Cp)Zr[N(Me)2]3), trimethylaluminum (Al(CH3)3), tris(dimethylamino)silane (Si[N(CH3)2]3H), etc. One or more of these elements may be used as the gas containing the predetermined element.

[0047] For example, gases including reducing gases, oxidizing gases, nitriding gases, sulfiding gases, selenizing gases, and tellurizing gases can be used as reactant gases. One or more of these can be used as reactant gases. Gases activated by plasma or the like can also be used as reactant gases. For example, when the raw material gas is a gas containing a predetermined element and the reactant gas is a reducing gas, a film composed of a predetermined element in its elemental form can be formed on the wafer 200. Furthermore, for example, when the raw material gas is a gas containing a predetermined element and the reactant gas is any one of an oxidizing gas, nitriding gas, sulfiding gas, selenizing gas, or tellurizing gas, an oxide film, a nitriding film, a sulfiding film, a selenizing film, or a tellurizing film of a predetermined element can be formed on the wafer 200.

[0048] As a reducing gas, one or more of the following gases may be used: hydrogen (H2), deuterium (D2), borane (BH3), diborane (B2H6), carbon monoxide (CO), ammonia (NH3), silane (SiH4), disilane (Si2H6), propane (Si3H8), germanane (GeH4), and digerane (Ge2H6). As an oxidizing gas, one or more of the following gases may be used: oxygen (O2), ozone (O3), water vapor (H2O), a mixture of H2 and O2, hydrogen peroxide (H2O2), and nitrous oxide (N2O). As a nitriding gas, one or more of the following hydrogen nitride gases may be used: ammonia (NH3), diazoxide (N2H2), hydrazine (N2H4), and N3H8. For example, gases containing hydrogen sulfide (H₂S), hydrogen persulfide (H₂S₂), ammonium disulfide ((NH₄)₂S), dimethyl sulfide ((CH₃)₂S), etc., can be used as sulfide gases. One or more of these gases can be used as sulfide gases. For example, gases containing selenoalkane (H₂Se), diselenoalkane (H₂Se₂), dimethylselenide ((CH₃)₂Se), etc., can be used as selenide gases. One or more of these gases can be used as selenide gases. For example, gases containing hydrogen telluride (H₂Te), hydrogen ditelluride (H₂Te₂), dimethyl telluride ((CH₃)₂Te), etc., can be used as telluride gases. One or more of these gases can be used as telluride gases.

[0049] As etching gases, gases containing halogen elements can be used, for example. Examples of halogen-containing gases include WF6, chlorine (Cl2), fluorine (F2), NF3, HF, and HCl.

[0050] As an inert gas, Gin can be used in rare gases such as Ar, He, Ne, and Xe, in addition to nitrogen (N2).

[0051] like Figure 10 As shown, the controller 121, serving as the control unit (control unit), is configured as a computer equipped with a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, storage device 121c, and I / O port 121d. The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, such as a touch panel, is connected to the controller 121.

[0052] The storage device 121c is configured, for example, as a flash memory or an HDD (Hard Disk Drive). The storage device 121c stores, in a readable manner, a control program that controls the operation of the board processing apparatus, and a process flow that describes the steps and conditions of the board processing described later. The process flow is a combination of elements that enable the controller 121 to execute each step of the board processing described later and obtain a predetermined result, and functions as a program (or program product). Hereinafter, the process flow, control program, etc., will be collectively referred to as a program (or program product). Furthermore, the process flow will be simply referred to as a process. When the term "program" is used in this specification, there may be cases where only a process unit is included, cases where only a control program unit is included, or cases where both are included. The RAM 121b is configured as a memory area (working area) that temporarily holds programs, data, etc., read from the CPU 121a.

[0053] I / O port 121d is connected to the aforementioned MFC241a~241j, valves 243a~243j, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, heater 207, rotating mechanism 267, crystal boat elevator 115, gate opening and closing mechanism 115s, etc.

[0054] CPU 121a is configured to read and execute control programs from storage device 121c, and to read processes from storage device 121c based on inputs such as operation commands from input / output device 122. CPU 121a is configured to control the flow rate adjustment of various gases in MFCs 241a to 241j, the opening and closing of valves 243a to 243j, the opening and closing of APC valve 244 and the pressure adjustment of APC valve 244 based on pressure sensor 245, the start and stop of vacuum pump 246, the temperature adjustment of heater 207 based on temperature sensor 263, the rotation and rotation speed adjustment of crystal boat 217 by rotating mechanism 267, the lifting and lowering of crystal boat 217 by crystal boat elevator 115, and the opening and closing of gate 219s by gate opening and closing mechanism 115s, etc., according to the contents of the read processes.

[0055] The controller 121 is configured to install the aforementioned program stored in the external storage device 123 onto a computer. The external storage device 123 includes, for example, a hard disk such as an HDD, an optical disk such as a CD, or a semiconductor memory such as a USB flash drive. The storage device 121c and the external storage device 123 constitute a computer-readable recording medium. Hereinafter, they will also be collectively referred to as recording media. When the term "recording medium" is used in this specification, sometimes only the storage device 121c is included, sometimes only the external storage device 123 is included, or sometimes both are included. Furthermore, the program may be provided to the computer using communication means such as the Internet or a dedicated line, without using the external storage device 123.

[0056] As one of the manufacturing processes of semiconductor devices, there are processes such as forming a film inside recesses (e.g., patterns, holes, trenches, etc.) on a buried substrate (gap-fill). Typically, gas can reach the upper part of the recess (the side near the opening) more easily than the lower part (the side near the bottom). Therefore, by forming a thick film on the upper part before forming a film of sufficient thickness on the lower part, voids or seams are sometimes formed inside the film, which reduces the film's properties (e.g., conductivity).

[0057] In this embodiment, since the recesses on the substrate are filled with high filling characteristics, the following processes are performed alternately: first, a film formation process is performed to form a deposited film in the recess by supplying film-forming gas; then, an etching process is performed to etch the upper part of the deposited film by supplying etching gas. Hereinafter, the method for forming the deposited film based on this step will sometimes be referred to as the etching-filling method or etching-filling process. Through the etching-filling process, voids and seams in the deposited film are reduced, that is, it is easy to fill the recesses with a deposited film with high filling characteristics.

[0058] Reference Figures 2-4 The flowchart below describes the etching and embedding process (substrate processing) in the first embodiment. In the following description, the operation of each part constituting the substrate processing apparatus is described by... Figure 10 The controller 121 controls it. Figure 2 Explain the overall process of film formation. Figure 3 illustrate Figure 2 Details of step S31 in the process, Figure 4 illustrate Figure 2 Details of step S32 in the process.

[0059] In the processing of wafer 200, firstly, wafer 200 is loaded into a crystal boat 217 and moved into processing chamber 201 (step S1). After the crystal boat 217 is moved into processing chamber 201, the temperature and pressure of processing chamber 201 are adjusted by heater 207 and APC valve 244 (step S2), and then an etching and filling process is performed (step S3). The etching and filling process is performed by repeating the film formation process (step S31) and the etching process (step S32) a predetermined number of times (step S33). Furthermore, a gas removal process to remove gas from processing chamber 201 may be performed between steps S31 and S32. These gas removal processes are performed, for example, in the same manner as step S42 described later.

[0060] When step S3 ends, in step S4, the temperature and pressure of the processing chamber 201 are adjusted to normal atmospheric pressure by using heater 207 and APC valve 244. Specifically, for example, an inert gas such as nitrogen (N2) is supplied to the processing chamber 201 and vented. This purges the processing chamber 201 with the inert gas, removing any residual gases (inert gas purging). Afterward, the atmosphere of the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure of the processing chamber 201 is restored to normal atmospheric pressure. Then, in step S5, the wafer 200 is removed from the processing chamber 201. The film deposition process is then complete.

[0061] Reference Figure 3 The flowchart details the operation of the film formation process (step S31) in the etching and filling process. In step S31, one or more film-forming gases are supplied into the processing chamber 201 to form a film on the wafer 200. Hereinafter, the following description will be based on the case where step S31 includes a raw material gas supply process (step S41), a gas removal process (step S42), a reaction gas supply process (step S43), a gas removal process (step S44), and steps S41 to 44 (step S45) performed a predetermined number of times.

[0062] In the raw material gas supply (step S41), a raw material gas, one of the film-forming gases, is supplied to the wafer 200. Step S41 is started by closing valves 243b to 243e and opening valve 243a. Alternatively, valves 243f to 243j can be opened to allow inert gas to flow within the processing chamber 201. After a predetermined time has elapsed, valve 243a is closed, thereby ending step S41. By supplying the raw material gas to the wafer 200, a first layer containing predetermined elements is formed on the wafer 200.

[0063] In step S41, the APC valve 244 can be appropriately adjusted to set the pressure inside the processing chamber 201 to, for example, 1 to 70,000 Pa. Furthermore, the supply flow rate of the raw material gas, controlled by the MFC 241a, can be set to an amount sufficient to completely cover the surface of the wafer 200 (including the inner surface of the trenches), for example, approximately 1 to 10,000 sccm. When supplying an inert gas (such as N2 gas), its supply flow rate can be set to, for example, 1 to 20,000 sccm. The temperature of the heater 207 can be set to make the temperature of the wafer 200, for example, 200 to 600°C.

[0064] In the gas removal process (step 42), the processing chamber 201 is vacuum-exhausted and / or purged to remove gas from it. Vacuum exhaust from the processing chamber 201 is performed, for example, by closing valves 243a to 243j and using a vacuum pump 246 to exhaust gas from the processing chamber 201. Purging of the processing chamber 201 is performed, for example, by closing valves 243a to 243e, opening valves 243f to 243j, supplying inert gas as purging gas to the processing chamber 201, and purging gas from the processing chamber 201 using the vacuum pump 246. Step 42 ends after a predetermined time has elapsed.

[0065] In step S43, a reaction gas, one of the film-forming gases, is supplied to the wafer 200. Step S43 begins by closing valves 243a, 243c-243e and opening valve 243b. Alternatively, valves 243f-243j can be opened to allow inert gas to flow within the processing chamber 201. After a predetermined time has elapsed, valve 243b is closed, thereby ending step S43. By supplying the reaction gas to the wafer 200, the first layer is modified into a second layer (also referred to as forming a second layer on the wafer 200).

[0066] The supply of reactive gas in step S43 can be achieved by adjusting the pressure inside the processing chamber 201 to approximately 0.01 to 13300 Pa, for example, by adjusting the APC valve 244. Furthermore, the supply flow rate of the reactive gas can be set to an amount sufficient to completely cover the surface of the wafer 200, for example, approximately 10 to 50000 sccm. The temperature of the heater 207 can be the same as in step S41.

[0067] In the gas removal process (step S44), the processing chamber 201 is vacuum-vented and / or purged to remove gas from the processing chamber 201. Step S44 is performed, for example, in the same order as step S42.

[0068] The above steps S41 to S44 are treated as a loop, and these processes are performed a predetermined number of times (n times, where n is an integer greater than or equal to 1). As a result, a deposited film D with a predetermined thickness (e.g., 0.1 to 10 nm) is formed on the surface of the wafer 200, including within the trench T. The above loop is preferably repeated multiple times.

[0069] Next, refer to Figure 4 The flowchart details the operation of the etching process (step S32) in the etching and landfill treatment. In step S32, at least a portion of the deposited film D is etched by supplying one or more etching gases into the processing chamber 201. Hereinafter, an example will be provided where step S32 includes a pressure adjustment step (step S51) and an etching gas supply step (step S52). The pressure adjustment step in step S51 is a step of supplying an inert gas, which serves as an adjustment gas, into the processing chamber 201 while setting the pressure inside the processing chamber 201 to a first pressure. Step S52 is a step of supplying etching gas into the processing chamber 201. Furthermore, steps S51 and S52 can be cycled multiple times in step S32.

[0070] Here, refer to Figure 5 (A), (B), Figure 6 This section describes the etching and filling process (step S3) performed on the trench T, which is a recess formed on the wafer 200. Figure 5 (A) schematically illustrates the process of forming a membrane within the filling recess when the pressure adjustment step (step S51) is omitted from step S32 of this embodiment (hereinafter, this is designated as a comparative example). Furthermore, Figure 5 (B) schematically illustrates the process of forming a membrane within the filling recess in step S32, which includes steps S51 and S52. In the comparative example, the process is performed in the same way as in this embodiment, except for the presence or absence of step S51. Furthermore, in Figure 5 (A) Figure 5 In (B) of the diagram, a groove T is shown as a concave portion, where the upper part is narrower than the middle and lower parts. However, this disclosure is not limited to the application of such a narrow-width upper groove, and can also be applied to grooves that are wider at the top than the middle or lower parts (e.g., conical in shape), or grooves with uniform width overall (rectangular in shape). Furthermore, there are no limitations on the depth, aspect ratio, etc., of the groove. Figure 6 This is a diagram schematically illustrating the pressure change within the processing chamber 201 during step S32 (and before and after) of this embodiment.

[0071] Figure 5In (A) of the comparative example, (I) indicates that the deposited film D is deposited in the trench T to a thickness such that the upper part of the trench T is not blocked, through step S31 of the comparative example. Then, in step S32 of the comparative example, the etching gas supply step (step S52) is performed without the pressure adjustment step (step S51). In step S52, etching gas Ge is supplied into the processing chamber 201. Specifically, valves 243a, 243b, 243d, and 243e are closed, and valve 243c is opened, thereby starting step S52. Alternatively, valves 243f to 243j can be opened to allow inert gas to flow within the processing chamber 201. Then, after a predetermined time has elapsed, valve 243c is closed, thereby ending step S52. By supplying etching gas Ge to the wafer 200, at least a portion of the deposited film D is etched (also referred to as removed from the wafer 200).

[0072] like Figure 5 As in (II) of (A) in the comparative example, in step S52, during the etching of the deposited film, the etching gas Ge enters the middle and lower parts of the trench T, thereby sometimes etching the deposited film in the middle and lower parts of the trench T as well. In this case, even if film formation and etching are combined, it is difficult to increase the thickness of the deposited film in the middle and lower parts of the trench T. Figure 5 As shown in (III) of (A), seams and voids remain within the deposited film D. The greater the aspect ratio of the recess (the ratio of the depth of the recess to the width and area of ​​the opening of the recess), the more likely this phenomenon will occur.

[0073] In this embodiment, during the film-forming process (step S31) as follows Figure 5 After the deposited film D is deposited in the trench T as in (I) of (B), the pressure adjustment step (step S51) and the etching gas supply step (step S52) are performed as step S32. Hereinafter, as... Figure 6 As shown, the example is taken where the pressure P0 in the processing chamber 201 after step S31 becomes, for example, less than 20 Pa due to vacuum exhaust.

[0074] In step S51, while supplying conditioning gas into the processing chamber 201, the pressure inside the processing chamber 201 is made to a first pressure (hereinafter referred to as pressure P1). Specifically, valves 243f to 243j are opened to supply an inert gas Gin (e.g., nitrogen (N2) gas) as the conditioning gas into the processing chamber 201, and the opening degree of APC valve 244 is controlled, thereby... Figure 6 As shown, the pressure in the processing chamber 201 is gradually increased to a pressure P1, which is higher than the pressure Pd. Then, as... Figure 6As shown, the pressure inside the processing chamber 201 can also be maintained at pressure P1 after the pressure becomes pressure P1. This reduces the pressure deviation at the beginning of step S52 in each cycle. Through step S51, as... Figure 5 As in (B) and (II), the interior of the trench T can be filled with an atmosphere of inert gas Gin at a relatively high pressure. In addition to nitrogen (N2), rare gases such as Ar, He, Ne, and Xe can also be used as inert gas Gin.

[0075] Following step S51, as an etching gas supply step (step S52), an etching gas is supplied to the processing chamber 201. In this embodiment, step S52 begins and ends in the same order as in the comparative example. Therefore, the pressure within the processing chamber 201 is, for example, as follows: Figure 6 The pressure changes as shown. Here, it is preferable that during at least a portion of step S52, the pressure within the processing chamber 201 is less than pressure P1. Hereafter, as... Figure 6 As shown, the example described is that the pressure inside the processing chamber 201 is maintained at pressure P1 for a period of time starting from the beginning of step S52, and then the pressure inside the processing chamber 201 becomes pressure P2, which is lower than pressure P1, during the subsequent period. Furthermore, the period in step S52 where the pressure inside the processing chamber 201 is lower than pressure P1 is defined as a low-pressure period, and the period where the pressure inside the processing chamber 201 is higher than pressure P1 is defined as a high-pressure period.

[0076] According to this embodiment, in addition to the effects described above, one or more of the effects shown below can also be obtained.

[0077] Step S52 is preferably performed after step S51. The molecules of the inert gas Gin within the trench T hinder the movement of the etching gas Ge molecules toward the middle and lower parts of the trench T. Furthermore, performing step S52 after step S51 increases the pressure difference between the start time of step S52 and the pressure within the processing chamber 201 during the low-pressure period. This also makes it easier to prevent the movement of etching gas Ge molecules toward the middle and lower parts of the trench T. Therefore, etching in the middle and lower parts of the trench T can be suppressed.

[0078] Step S52 is preferably performed in a manner that includes a low-pressure period. In other words, in at least a portion of step S52, the pressure within the processing chamber 201 is preferably reduced from pressure P1 to a lower pressure. This will be explained below.

[0079] Consider maintaining the pressure within the processing chamber 201 at pressure P1 to suppress the movement of gas inside and outside the trench T caused by the pressure difference between the outside and inside of the trench T. Even in this case, due to the diffusion of the etching gas, as time passes from the start of step S52, the concentration difference of the etching gas Ge in the gas inside and outside the trench T decreases, thus making etching in the middle and lower parts of the trench easier. By performing step S52 in a manner that includes a low-pressure period, gas flow from inside the trench T to the outside caused by the pressure difference between the outside and inside of the trench T can be formed during the period from the start to the end of step S52. As a result, it is possible to further hinder the movement of etching gas Ge molecules toward the middle and lower parts of the trench T.

[0080] Thus, in step 32, as Figure 5 As in (B) of (III), etching is suppressed at the lower part of the trench T, while etching is easier at the upper part of the trench T compared to the lower part. Then, steps 31 and 32 are performed a predetermined number of times in step 33. Thus, the filling of the middle and lower parts of the trench T can be easily completed before the upper part is sealed, thereby facilitating the formation of [something] within the trench T. Figure 5 The stacked membrane D that does not contain seams or gaps, as in (B) and (IV) of the middle.

[0081] Furthermore, if the high-pressure period is maintained for a long time, the etching gas Ge may sometimes move downwards due to the concentration difference of the etching gas between the outside and the bottom of the trench T. By setting a low-pressure period after the high-pressure period, gas movement from the bottom to the outside of the trench T is generated during at least a portion of the low-pressure period due to the pressure difference between the outside and the bottom of the trench T. As a result, the etching gas has difficulty reaching the bottom of the trench T. This further suppresses etching on the deeper side.

[0082] In step S52, it is preferable to keep the pressure inside the processing chamber 201 below pressure P1. In other words, in step S52, it is preferable not to keep the pressure inside the processing chamber 201 above pressure P1. This easily suppresses the movement of etching gas Ge molecules from the outside to the inside of the trench T caused by the pressure difference between the outside and inside of the trench T. Therefore, etching in the middle and lower parts of the trench T can be further suppressed. Furthermore, during high pressure periods, the pressure in the processing chamber 201 can also be kept above pressure P1. In this case, at least some of the above-described effects can also be obtained.

[0083] The low-pressure period preferably includes the end of step S52. In other words, it is preferable that the pressure inside the processing chamber 201 is lower than pressure P1 at the end of step S52. Therefore, at the end of step S52, when the concentration of etching gas Ge in the trench T tends to increase due to the diffusion of etching gas Ge, the partial pressure of etching gas Ge in the trench T can be reduced. Thus, etching in the middle and lower parts of the trench T can be further suppressed.

[0084] Preferably, the pressure inside the processing chamber 201 at the beginning of step S52 is below pressure P1. Therefore, at the beginning of step S52, it is easier to suppress the movement of etching gas Ge molecules from the outside to the inside of the trench T caused by the pressure difference between the outside and inside of the trench T. Thus, etching in the middle and lower parts of the trench T can be suppressed.

[0085] Preferably, the pressure in the processing chamber 201 at the beginning of step S52 is set to pressure P1. Therefore, at the beginning of step S52, it is easier to suppress the movement of inert gas Gin molecules from the inside to the outside of the trench T caused by the pressure difference between the outside and inside of the trench T. Furthermore, it is easier to increase the pressure difference in the processing chamber 201 during the high-pressure period and the low-pressure period, thus easily suppressing the movement of etching gas Ge molecules from the outside to the inside of the trench T. Therefore, it is easier to reduce the partial pressure of etching gas Ge in the lower part of the trench T, thereby suppressing etching in the middle and lower parts of the trench T.

[0086] like Figure 6 As shown, it is preferable that the pressure (hereinafter, denoted as pressure Pd0) inside the processing chamber 201 at the moment when the film-forming gas is first supplied to the processing chamber 201 in step S31 is less than the pressure P1. Therefore, in step S31, it is difficult for the molecules of the film-forming gas to collide with the molecules of the gas in the trench T, and thus the film-forming gas easily reaches the lower part of the trench T. Therefore, the difference in ease of film formation between the upper and lower parts of the trench T can be reduced. Furthermore, in this embodiment, in steps S41 and S43, one of the pressures (denoted as Pd01 and Pd12, respectively) inside the processing chamber 201 at the moment when the raw material gas and the reactant gas are first supplied to the processing chamber 201 can be set as pressure Pd0. The above-mentioned effects can be obtained in either case. Here, the difference in the amount of raw material gas reaching the upper and lower parts of the trench T tends to increase. Therefore, it is particularly preferable that Pd01 is less than the pressure P1. Furthermore, it is even more preferable that both Pd01 and Pd02 are less than the pressure P1. In this case, the above-mentioned effects are more easily obtained.

[0087] like Figure 6As shown, it is preferable to make the pressure P1 greater than the pressure inside the processing chamber 201 in step S31, i.e., the film-forming pressure Pd1. This makes it easier to fill the recess with a sufficient amount of inert gas in step S51, thus suppressing etching in the middle and lower parts of the trench T. Furthermore, in this embodiment, in steps S41 and S43, one of the pressures inside the processing chamber 201 when the raw material gas and the reaction gas are supplied (set as Pd11 and Pd12 respectively) can be set as pressure Pd1. The above-mentioned effects can be obtained in either case.

[0088] like Figure 6 As shown, it is preferable that the pressure inside the processing chamber 201 during the low-pressure period is greater than the film-forming pressure Pd1. In other words, during the low-pressure period, it is preferable that the pressure inside the processing chamber 201 is not lower than the pressure Pd1. As a result, it is easier to keep the pressure difference between the outside and the inside of the trench T small, so that the inert gas filled into the trench T in step S51 is less likely to move to the outside of the trench T. Therefore, the above-mentioned effect is easily obtained.

[0089] In step S52, it is preferable that the pressure inside the processing chamber 201 is lower than pressure P1 during the period from the start of the low-pressure period to the end of step S52. This prevents the pressure outside the trench T caused by the pressure difference from becoming greater than the pressure inside the trench T, thus suppressing the movement of etching gas into the trench T. Therefore, the aforementioned effects are easily obtained. Furthermore, in step S52, it is preferable that the pressure inside the processing chamber 201 is not increased after the start of the low-pressure period. This further suppresses the movement of etching gas from the outside to the inside of the trench caused by the pressure difference, thus making it easier to obtain the aforementioned effects.

[0090] Figure 7 (A) is another example of the pressure change within the processing chamber 201 in step S52. Figure 7 In example (A), in step S52, the period during which the pressure in the processing chamber 201 is set to pressure P1 is sequentially set (and...). Figure 6 Similarly, this is defined as a period during which the pressure inside the processing chamber 201 is less than pressure P1 but greater than the second pressure (hereinafter referred to as P21) (first low-pressure period), and a period during which the pressure inside the processing chamber 201 is less than pressure P21 and less than pressure P1 (hereinafter referred to as pressure P22). That is, during this period... Figure 7 In this example, the low-pressure period includes a first low-pressure period and a second low-pressure period. When switching from a high-pressure period to the first low-pressure period, and from the first low-pressure period to the second low-pressure period, the pressure on the outside of the trench T is lower than the pressure at the bottom of the trench T. Therefore, the gas present at the bottom of the trench T moves towards the outside of the trench T. Consequently, the etching gas has a greater difficulty reaching the bottom of the trench T.

[0091] Furthermore, during the first low-pressure period, as time passes, etching gas moves from the outside of the trench T to the lower side due to the pressure difference between the outside and the lower side of the trench T and the concentration difference of the etching gas. By setting a second low-pressure period after the first low-pressure period, gas movement from the lower side to the outside of the trench T caused by the pressure difference between the outside and the lower side of the trench T occurs during at least a portion of the second low-pressure period. As a result, the etching gas has difficulty reaching the lower part of the trench T. Therefore, etching on the lower side of the trench T can be further suppressed.

[0092] Figure 7 (B) is another example of the pressure change within the processing chamber 201 in step S52. Figure 7 In example (B), the pressure inside processing chamber 201 is continuously varied (decreased) during the low-pressure period. As an example, in... Figure 7 In example (B), the pressure is continuously varied from pressure P1 to P23 during the low-pressure period. The method of pressure variation is not limited to this; the pressure in the processing chamber 201 can also be set to a value lower than pressure P1 at the beginning of the low-pressure period. Alternatively, the slope of the pressure change can be varied midway through the process. By continuously varying the pressure within the processing chamber 201 during at least a portion of the low-pressure period, continuous gas movement from the inside of the trench T to the outside can be generated. Therefore, etching on the middle and lower sides of the trench T can be suppressed.

[0093] [Second Implementation]

[0094] Next, refer to Figure 8 The substrate processing apparatus 1000 and substrate processing method of the second embodiment will be described. The apparatus structure of the substrate processing apparatus 1000 of the second embodiment can be the same as that of the first embodiment. Figure 1 )same.

[0095] The second embodiment differs from the first embodiment in the etching step (step S32). All other processes can be performed in the same manner as in the first embodiment. Specifically, the etching step (S32) in the second embodiment includes a first etching process using a first etching gas as the etching gas and a second etching process using a second etching gas as the etching gas. Furthermore, the same low-pressure period is provided in both of these processes as in the embodiment described above. (Refer to...) Figure 9 The flowchart illustrates this point.

[0096] First, a pressure adjustment process (step S61) is performed in the same order as step S51 to adjust the pressure of the processing chamber 201. Then, a first etching gas is supplied to the wafer 200 to perform a first etching process (step S62). Specifically, valves 243a-243c and 243e are closed, and valve 243d is opened, thereby starting step S61. Alternatively, valves 243f-243j can be opened to allow inert gas to flow within the processing chamber 201. Then, after a predetermined time has elapsed, valve 243d is closed, thereby ending step S61. This forms a thin modified layer on the surface of the wafer 200. Next, a gas removal process (step S63) is performed to vacuum exhaust and / or purge the processing chamber 201 in the same order as step S42 to remove gas from the processing chamber 201. Then, a pressure adjustment process (step S64) is performed in the same order as step S51 to adjust the pressure of the processing chamber 201. Next, a second etching gas is supplied to the wafer 200 to perform a second etching process (step S65). Specifically, valves 243a to 243d are closed, and valve 243e is opened, thereby starting step S65. Alternatively, valves 243f to 243j can be opened to allow inert gas to flow within the processing chamber 201. After a predetermined time has elapsed, valve 243d is closed, thereby ending step S65. Then, a gas removal process (step S66) is performed, in the same order as step S42, to vacuum exhaust and / or purge the processing chamber 201, removing gas from the processing chamber 201. Steps S61 to S66 are performed a predetermined number of times (once or multiple times).

[0097] The first and second etching gases can be appropriately set to match the film to be etched. For example, the first and second etching gases can be appropriately selected from fluorine (F) gas, chlorine (Cl) gas, oxidizing gas, gas containing Group 13 elements, and gas containing Group 15 elements.

[0098] In the second embodiment, similarly to the first embodiment, the movement of molecules of the first and second etching gases toward the middle and lower parts of the trench T is hindered. Therefore, similarly to the first embodiment, etching of the middle and lower parts of the trench T can be suppressed. Furthermore, either step S62 or step S65 may not include the low-pressure period. Additionally, at least one of steps S61 and S64 may be omitted. In these cases, at least some of the effects of the first embodiment can be obtained.

[0099] [Third Implementation Method]

[0100] Next, refer to Figure 9The substrate processing apparatus and substrate processing method according to the third embodiment are described. In this third embodiment, a first substrate processing apparatus 1000 having a first processing container with a first space (or processing chamber 201) formed inside and a second substrate processing apparatus 2000 having a second processing container with a second space formed inside are used. In this third embodiment, after a film deposition process (step S31) is performed in the first processing chamber of the first substrate processing apparatus 1000, the wafer 200 to be processed is moved from the first processing chamber of the first substrate processing apparatus 1000 to the second processing chamber of the second substrate processing apparatus 2000, and an etching process (step S32) is performed in the second processing chamber. In this case, at least some of the effects of the first embodiment can also be obtained.

[0101] (Other implementation methods)

[0102] The embodiments of this disclosure have been described in detail above, but this disclosure is not limited to the above embodiments, and various modifications can be made without departing from its spirit. For example, in the above embodiments, an example of filling and depositing a film in the recesses of trenches T, etc., by the DED method has been described, but this disclosure is not limited to this, and the technology of this disclosure can be applied when etching films in recesses where trenches, etc., are not extensively filled. In addition, the technology of this disclosure can also be applied to etching processes in which no film-forming processes are performed before or after. In these cases, at least some of the above-described effects can also be obtained. When the portion near the opening of the recess in this disclosure is replaced with a portion on the substrate surface that is easily etched, and the portion near the deep side of the recess is replaced with a portion on the substrate surface that is difficult to etch, the above-described effects can also be obtained. Therefore, according to the technology of this disclosure, it can be said that it is possible to control the portions that are easy to etch and the portions that are difficult to etch.

[0103] In the above-described method, an example of processing substrates using a batch-type substrate processing apparatus that processes multiple substrates at a time has been explained. This disclosure is not limited to the above-described method; for example, it can also be appropriately applied when forming films using a monolithic substrate processing apparatus that processes one or several substrates at a time. Furthermore, in the above-described method, an example of processing substrates using a substrate processing apparatus with a hot-wall type furnace has been explained. This disclosure is not limited to the above-described method; it can also be appropriately applied when forming films using a substrate processing apparatus with a cold-wall type furnace. When using these substrate processing apparatuses, each process can be performed with the same processing sequence and processing conditions as in the above-described method and its variations, and the same effects as in the above-described method and its variations can be obtained.

[0104] In the above-described method, an example of using an inert gas as the conditioning gas has been explained. This disclosure is not limited to the above-described method; for example, a gas with chemical reactivity towards the substrate can also be used as the conditioning gas. However, in order to effectively suppress etching in the middle and lower parts of the recess, it is preferable to use a gas with lower etchability than the gas used as the etching gas. Furthermore, it is even more preferable to use a gas that does not etch the film as the conditioning gas. In these cases, the same effect as the described method or its variations can be obtained.

[0105] Furthermore, this disclosure is not limited to semiconductor manufacturing processes. For example, this disclosure can also be applied to substrate processing such as manufacturing processes for liquid crystal devices, solar cells, light-emitting devices, glass substrates, ceramic substrates, and conductive substrates.

[0106] Furthermore, it is possible to replace a portion of the structure of a certain embodiment with the structure of another embodiment, and it is also possible to add structures of other embodiments to the structure of a certain embodiment. In addition, it is also possible to add, delete, or replace other structures for a portion of the structure of each embodiment.

[0107] Explanation of reference numerals in the attached figures

[0108] 200: Wafer (substrate).

Claims

1. A substrate processing method, characterized in that, have: Step a: A regulating gas is supplied to a first space disposed on a substrate having a recess formed on its surface, and the pressure within the first space is made into a first pressure; and Step b, following step a, involves supplying etching gas into the first space. During the low-pressure period, which is at least a part of process b, the pressure in the first space is made less than the first pressure.

2. The substrate processing method according to claim 1, characterized in that, The pressure in the first space during process b is reduced to below the first pressure.

3. The substrate processing method according to claim 1 or 2, characterized in that, The low-pressure period includes the end time of process b.

4. The substrate processing method according to any one of claims 1 to 3, characterized in that, Make the pressure in the first space at the start of process b below the first pressure.

5. The substrate processing method according to claim 4, characterized in that, Make the pressure in the first space at the beginning of process b the first pressure.

6. The substrate processing method according to any one of claims 1 to 5, characterized in that, During the high-pressure period, including the start of process b, the pressure within the first space is made to exceed the first pressure. The low-pressure period is set after the high-pressure period.

7. The substrate processing method according to any one of claims 1 to 5, characterized in that, The low-pressure period includes: During a first low-pressure period, the pressure within the first space becomes a pressure less than the first pressure but greater than the second pressure; and During a second low-pressure period, the pressure within the first space becomes a pressure that is lower than the second pressure and higher than the first pressure, representing a third pressure or higher. The second low-pressure period is set after the first low-pressure period.

8. The substrate processing method according to any one of claims 1 to 5, characterized in that, During at least a portion of the low-pressure period, the pressure within the first space is continuously reduced.

9. The substrate processing method according to any one of claims 1 to 5, characterized in that, The substrate processing method performs the following steps a predetermined number of times: Step c, supplying film-forming gas into a second space containing the substrate to form a film on the substrate; and The process includes process a and process b.

10. The substrate processing method according to claim 9, characterized in that, The pressure at the moment when the film-forming gas is supplied to the second space in process c is less than the first pressure.

11. The substrate processing method according to claim 9 or 10, characterized in that, Make the first pressure greater than the pressure in the second space in process c.

12. The substrate processing method according to any one of claims 9 to 11, characterized in that, The pressure in the first space during the low-pressure period is made less than the pressure in the second space during step c.

13. The substrate processing method according to any one of claims 9 to 12, characterized in that, The membrane is formed by filling the recess.

14. The substrate processing method according to any one of claims 9 to 13, characterized in that, The second space is the same space as the first space.

15. The substrate processing method according to any one of claims 9 to 13, characterized in that, The second space is a space different from the first space.

16. The substrate processing method according to any one of claims 9 to 15, characterized in that, In step b, during the period from the start of the low-pressure period to the end of step b, the pressure in the first space is made less than the first pressure.

17. The substrate processing method according to any one of claims 1 to 5, characterized in that, The etching gas includes a first etching gas and a second etching gas. Step b includes: step b1, supplying the first etching gas into the first space to form a modified layer on the substrate; and step b2, supplying the second etching gas into the first space to remove the modified layer from the substrate. The low-pressure period is set in at least one of process b1 and process b2.

18. A method for manufacturing a semiconductor device, characterized in that, have: Step a: A regulating gas is supplied to a first space disposed on a substrate having a recess formed on its surface, and the pressure within the first space is made into a first pressure; and Step b, following step a, involves supplying etching gas into the first space. During the low-pressure period, which is at least a part of process b, the pressure in the first space is made less than the first pressure.

19. A program product, characterized in that, The program product causes the substrate processing device to execute the following steps via a computer: Step a: Supply conditioning gas into a first space disposed on a substrate having a recess formed on its surface, and make the pressure in the first space a first pressure; Step b: After step a, etching gas is supplied into the first space. During the low-pressure period, which is at least a part of step b, the pressure in the first space is made less than the first pressure.

20. A substrate processing apparatus, characterized in that, have: A first processing container, which has a first space formed inside; A regulating gas supply system supplies regulating gas into the first space; An etching gas supply system that supplies etching gas into the first space; An exhaust system that controls the pressure within the first space; and The control unit is configured to control the regulating gas supply system, the etching gas supply system, and the exhaust system in order to perform a process including the following: Process a: The regulating gas is supplied into the first space of the substrate disposed on the surface of which a recess is formed, and the pressure in the first space is made into a first pressure. as well as Process b involves supplying the etching gas into the first space after process a. During the low-pressure period, which is at least a part of the process b, the pressure in the first space is made less than the first pressure.

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