Chemical vapor deposition process off-gas treatment system and method

Abstract

The application discloses a chemical vapor deposition process tail gas treatment system and a method thereof. The chemical vapor deposition process tail gas treatment system comprises a furnace body, a gas inlet pipeline, a gas outlet pipeline and a heating mechanism. The furnace body is internally provided with a heating chamber. The gas inlet pipeline and the gas outlet pipeline are respectively connected with the furnace body and communicate with the heating chamber. The gas inlet pipeline is used for connecting a tail gas outlet of a CVD process. The heating mechanism is arranged in the furnace body and used for heating treatment of the heating chamber. The chemical vapor deposition process tail gas treatment system uses a high-temperature furnace to decompose by-products in the CVD process, replaces a filter tank in a traditional technology, heats the gas inlet pipeline and the gas outlet pipeline to make the by-products in the CVD process enter the high-temperature furnace, and discharges the by-products after complete decomposition by the high-temperature furnace. The safety risk of a personnel in a tail gas treatment process of the CVD process is reduced, production efficiency is improved, production cost is saved, and a production environment is improved.

Description

Technical Field

[0001] This application relates to the fields of vapor deposition and gas treatment technology, and in particular to a chemical vapor deposition process tail gas treatment system and method. Background Technology

[0002] In the CVD (Chemical Vapor Deposition) process, the inlet gas includes silanes, such as those using MTS (methyltrichlorosilane) as a raw material. The CVD exhaust gas also contains undecomposed silanes. For the undecomposed organosilanes in the CVD exhaust gas, most plants use condensation in filter tanks to deposit the silanes, followed by water immersion for recovery. Because silanes are colorless, toxic, flammable, and explosive gases with highly reactive chemical properties, they are easily oxidized. When the silane concentration reaches 3%, combustion can occur in air, posing a safety risk to personnel during operation and causing significant harm to workers and the surrounding environment. Summary of the Invention

[0003] Therefore, it is necessary to provide a chemical vapor deposition (CVD) process tail gas treatment system. The CVD process tail gas treatment system of this invention can reduce the safety risks to personnel during tail gas treatment in CVD processes, improve production efficiency, save production costs, and improve the production environment.

[0004] One embodiment of this application provides a chemical vapor deposition process exhaust gas treatment system.

[0005] A chemical vapor deposition (CVD) process tail gas treatment system includes a furnace body, an inlet pipe, an exhaust pipe, and a heating mechanism. The furnace body is provided with a heating chamber. The inlet pipe and the exhaust pipe are respectively connected to the furnace body and communicate with the heating chamber. The inlet pipe is used to connect to the tail gas outlet of the CVD process. The heating mechanism is disposed in the furnace body for heating the heating chamber.

[0006] In some embodiments, the intake pipe is further provided with a protective gas pipe for connecting to an external protective gas source to input protective gas into the intake pipe.

[0007] In some embodiments, the intake pipe is further provided with a heating and insulation structure for heating and insulation of the intake pipe.

[0008] In some embodiments, the heating chamber is a graphite box structure.

[0009] In some embodiments, the heating chamber has a tortuous flow channel.

[0010] In some embodiments, the furnace body has a water-cooled jacket structure, which is fitted onto the outer shell of the furnace body and is used to cool the furnace body.

[0011] In some embodiments, the chemical vapor deposition process exhaust gas treatment system further includes a cooling mechanism disposed in the exhaust duct.

[0012] In some embodiments, the chemical vapor deposition process exhaust gas treatment system further includes a filtration system connected to the exhaust duct.

[0013] In some embodiments, the chemical vapor deposition process exhaust gas treatment system further includes a vacuum generation system connected to the exhaust pipe, the vacuum generation system being used to evacuate the heating chamber through the exhaust pipe.

[0014] In some embodiments, the furnace body is further provided with a thermocouple interface and / or a water-cooled electrode interface, wherein the thermocouple interface and the water-cooled electrode interface are respectively used to connect an external thermocouple and a water-cooled electrode.

[0015] In some embodiments, the chemical vapor deposition process exhaust gas treatment system further includes a high-temperature resistant sealing ring, which is provided at the connection between the air inlet pipe, the exhaust pipe and the furnace body.

[0016] An embodiment of this application also provides a method for treating exhaust gas from a chemical vapor deposition process.

[0017] A method for treating exhaust gas from a chemical vapor deposition (CVD) process, using a CVD exhaust gas treatment system, includes the following steps:

[0018] The process exhaust gas is controlled to enter the heating chamber inside the furnace through the air inlet pipe;

[0019] The heating mechanism is controlled to heat the heating chamber, and the heating temperature is controlled to be 1550℃~1800℃.

[0020] The gas inside the heating chamber is controlled to be discharged through the exhaust pipe.

[0021] The aforementioned chemical vapor deposition (CVD) process exhaust gas treatment system uses a high-temperature furnace to decompose the byproducts of the CVD process, replacing the filter tank in traditional technology. By heating the exhaust pipe, all the byproducts of the CVD process are fed into the high-temperature furnace, where they are completely decomposed and discharged. This reduces the safety risks to personnel during the exhaust gas treatment process of the CVD process, improves production efficiency, saves production costs, and improves the production environment. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings. In the following description, the same reference numerals denote the same parts.

[0024] Figure 1 This is a schematic diagram of a chemical vapor deposition process tail gas treatment system according to an embodiment of the present invention.

[0025] Explanation of reference numerals in the attached figures

[0026] 10. Chemical vapor deposition process tail gas treatment system; 100. Furnace body; 101. Support frame; 200. Inlet pipe; 300. Exhaust pipe; 400. Heating mechanism; 500. Cooling mechanism; 600. Filtration system; 700. Vacuum generation system; 800. Protective gas pipe; 900. Valve components; 1000. Insulation layer. Detailed Implementation

[0027] To make the above-mentioned objects, features, and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of the present invention. However, the present invention can be practiced in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0028] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0029] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0030] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0031] In the description of this invention, "several" means one or more, "multiple" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0032] In this document, "optionally," "optionally," and "optional" mean that something is optional, that is, it is selected from either "with" or "without." If multiple "options" appear in a technical solution, unless otherwise specified and there are no contradictions or mutual constraints, each "option" is independent. In this application, descriptions such as "optionally contains" and "optionally includes" indicate "contains or does not contain."

[0033] In this document, unless otherwise stated, the reaction steps may be performed in the order described herein or not. For example, other steps may be included between reaction steps, and the order of reaction steps may be appropriately interchanged. This is something that those skilled in the art can determine based on conventional knowledge and experience. Preferably, the reaction methods described herein are performed sequentially.

[0034] In this application, when numerical intervals (i.e., numerical ranges) are mentioned, unless otherwise specified, the distribution of selectable numerical values ​​within the numerical interval is considered continuous, and includes the two endpoints of the numerical interval (i.e., the minimum and maximum values), as well as every numerical value between these two endpoints. Unless otherwise specified, when a numerical interval refers only to integers within that numerical interval, it includes the two endpoint integers of the numerical range, as well as every integer between the two endpoints, which is equivalent to directly listing every integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be merged. In other words, unless otherwise specified, the numerical ranges disclosed in this application should be understood to include any and all subranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, percentage, ratio, etc. The term "numerical interval" can be broadly included to include percentage intervals, ratio intervals, proportion intervals, etc.

[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0036] This application provides a chemical vapor deposition (CVD) process tail gas treatment system 10 to address at least one of the following technical problems in existing CVD processes: (1) When the CVD tail gas contains undecomposed silane, it expands thermally upon contact with water in the air during cleaning after condensation, releasing HCl corrosive gas. Even after the silane is soaked in water, there is still a risk of deflagration and fire during the cleaning process, endangering the safety of operators; (2) After each CVD process, the HCl corrosive gas generated during the cleaning of the filter tank will contaminate the metal equipment in the HCl workshop; (3) Each CVD process requires 4-5 hours of cleaning after completion, reducing production efficiency; (4) The filter element in the filter tank needs to be replaced regularly, increasing production costs. The chemical vapor deposition process tail gas treatment system 10 will be described below with reference to the accompanying drawings.

[0037] The chemical vapor deposition process tail gas treatment system 10 provided in this application embodiment is exemplary; please refer to [link to example]. Figure 1 As shown, Figure 1 This is a schematic diagram of the chemical vapor deposition (CVD) process tail gas treatment system 10 provided in an embodiment of this application. The CVD process tail gas treatment system 10 of this application can be used for tail gas treatment in CVD processes.

[0038] To more clearly illustrate the structure of the chemical vapor deposition process tail gas treatment system 10, the following description of the chemical vapor deposition process tail gas treatment system 10 will be provided in conjunction with the accompanying drawings.

[0039] For example, please refer to Figure 1 As shown, a chemical vapor deposition (CVD) process exhaust gas treatment system 10 includes a furnace body 100, an inlet pipe 200, an exhaust pipe 300, and a heating mechanism 400. A heating chamber is provided within the furnace body 100. The inlet pipe 200 and the exhaust pipe 300 are respectively connected to the furnace body 100 and communicate with the heating chamber. The inlet pipe 200 is used to connect to the exhaust gas outlet of the CVD process. The heating mechanism 400 is disposed within the furnace body 100 for heating the heating chamber.

[0040] The heating mechanism 400 heats the heating chamber at a temperature of 1550℃ to 1800℃. For example, in one example, the heating mechanism 400 heats the heating chamber at 1550℃, and in another example, the heating mechanism 400 heats the heating chamber at 1800℃. It is easy to understand that in other examples, the heating mechanism 400 can also heat the heating chamber at 1600℃, 1650℃, 1700℃, 1750℃, or other values ​​and any range between two of the above values.

[0041] In some embodiments, a protective gas conduit 800 is also provided on the intake conduit 200. The protective gas conduit 800 is used to connect an external protective gas source for introducing protective gas into the intake conduit 200. For example, the protective gas source includes nitrogen, helium, etc.

[0042] In some embodiments, a valve component 900 is provided on the protective gas conduit 800.

[0043] In some embodiments, valve component 900 may include manual valves and electric valves.

[0044] In some embodiments, the intake duct 200 is also equipped with a heating and insulation structure for heating and insulation of the intake duct 200. Byproducts discharged from the CVD process, including undecomposed organosilanes and reaction product HCl gas, enter the heating chamber through the intake duct 200. The intake duct 200 is heated and kept at approximately 100°C to prevent condensation of the byproducts within it.

[0045] In some embodiments, the intake duct 200 may be a graphite conduit.

[0046] In some embodiments, the heating chamber is a graphite box structure. In this application, the heating chamber is made of graphite material to obtain the graphite box structure. The use of graphite material in the heating chamber has several advantages, especially in high-temperature processing and special industrial applications, including (1) high melting point: graphite has a very high melting point (about 3,726.8°C), which makes it stable at extremely high temperatures and suitable for high-temperature processing. (2) good thermal conductivity: graphite is a good thermal conductor, which can quickly and uniformly transfer heat, helping to improve heating efficiency and temperature uniformity. (3) electrical conductivity: graphite is also a good conductor of electricity, which makes it suitable for resistance heating applications, such as in electric arc furnaces or induction heating systems. (4) chemical stability: graphite is inert to many chemicals at high temperatures and does not easily react with most metals, glass and other materials, reducing the risk of contamination. (5) low coefficient of thermal expansion: compared with other materials, graphite has a low coefficient of thermal expansion, which means that its size changes less when the temperature changes, thereby reducing stress and possible damage caused by thermal expansion and contraction. (6) Corrosion resistance: Graphite has excellent resistance to various acid and alkali environments, which allows it to work stably for a long time in corrosive environments. (7) Ease of processing: It is relatively easy to process into complex shapes and sizes, and can be customized to meet specific design requirements. (8) Lightweight: Compared with some metal materials, graphite is relatively lightweight, which may be an important consideration in some applications. (9) Self-lubricating properties: The surface of graphite has a certain degree of lubricity, which can reduce friction without external lubrication.

[0047] In some embodiments, the heating chamber has a tortuous flow channel. For example, the heating chamber may have a wavy, tortuous flow channel or other flow shapes. The shape of the flow channel is not specifically limited; the purpose of the tortuous flow channel is to increase the gas flow path and increase the gas heating area.

[0048] In this application, the tortuous flow channel offers the following advantages: Increased heat transfer area: By extending the fluid path, the tortuous flow channel increases the contact area of ​​the heat transfer surface, thereby improving heat transfer efficiency. This is particularly important for applications requiring high-efficiency heat exchange. Improved temperature distribution uniformity: The tortuous design allows heat to be distributed more evenly within the flow channel, avoiding localized overheating and ensuring a more consistent temperature throughout the system. Reduced pressure drop and improved flow stability: Although tortuous flow channels may increase fluid resistance to some extent, a well-designed system can effectively control pressure drop and help stabilize fluid flow, reducing the negative effects of turbulence. Promoted media mixing: For flow channels containing two or more media, the tortuous shape facilitates thorough mixing between these media, which is especially important in chemical reactions, as good mixing can accelerate reaction rates and improve product quality. Enhanced structural strength: The design of tortuous flow channels is often accompanied by variations in wall thickness or structural features such as reinforcing ribs, which can enhance the overall mechanical strength and durability of the structure to a certain extent. Adaptability to space constraints of different sizes and shapes: Tortuous flow channels can be flexibly designed according to actual space requirements to adapt to various installation environments and layout requirements. Optimized Material Utilization: The tortuous flow channel allows for a more compact design of the heating chamber, achieving higher performance within a limited space while saving material costs. Support for Modular Design: The tortuous flow channel facilitates integration with other components, enabling the construction of modular heating systems and simplifying maintenance and upgrades. Prevention of Short-Circuit Flow: In some cases, straight flow channels can cause fluid to flow too quickly without sufficient time to make adequate contact with the heating surface, resulting in so-called "short-circuit flow." The tortuous flow channel effectively prevents this, ensuring that all fluids receive appropriate heating.

[0049] In some embodiments, the furnace body 100 has a water-cooled jacket structure. The water-cooled jacket structure is fitted onto the outer shell of the furnace body 100 and is used to cool the furnace body 100.

[0050] In some embodiments, the chemical vapor deposition process exhaust gas treatment system 100 further includes a cooling mechanism 500 disposed in the exhaust duct 300.

[0051] In some embodiments, the cooling mechanism 500 includes a cold trap. The cooling mechanism 500 is fitted onto the exhaust pipe 300. The cold trap is connected to an external cold water source, and the cold water cools the exhaust pipe 300.

[0052] It is easy to understand that in other examples, the cooling mechanism 500 may also include other forms, such as air cooling. In the air-cooled form, a fan can be used to cool the exhaust pipe 300.

[0053] Preferably, the water-cooling jacket structure on the outer wall of the furnace body 100 is a double-layer structure. The double-layer water-cooling jacket structure has the following advantages: High-efficiency cooling: The double-layer water-cooling jacket provides higher heat exchange efficiency than a single-layer cooling system because it utilizes the simultaneous action of the inner and outer layers of cooling water. Precise temperature control: For certain temperature-sensitive applications, the double-layer water-cooling jacket can help achieve more precise temperature control. Strong adaptability: The parameters of the inner and outer cooling water, such as temperature and flow rate, can be adjusted according to specific application requirements to meet the cooling requirements under different operating conditions.

[0054] In some embodiments, the chemical vapor deposition process exhaust gas treatment system 10 further includes a filtration system 600. The filtration system 600 is connected to the exhaust duct 300. Preferably, the filtration system 600 includes a filter canister.

[0055] In some embodiments, the chemical vapor deposition process exhaust gas treatment system 10 further includes a vacuum generation system 700. The vacuum generation system 700 is connected to the exhaust pipe 300 and is used to evacuate the heating chamber through the exhaust pipe 300.

[0056] A vacuum generating system 700 is a device or apparatus used to generate, maintain, and utilize an environment below atmospheric pressure. A vacuum generating system 700 typically includes the following main components: (1) Vacuum pump: This is the core component of the vacuum system, used to extract gas to reduce the pressure inside the container. Vacuum pumps can be classified into mechanical (such as piston pumps, rotary vane pumps), molecular (such as turbomolecular pumps), adsorption (such as cryogenic pumps), etc., depending on their working principle. (2) Vacuum chamber: This is the space that needs to be evacuated. It can be of any shape and size, depending on the specific application requirements. (3) Valves and pipes: These are used to connect various components and control the direction and speed of gas flow. (4) Measuring instruments: Such as vacuum gauges, used to accurately measure the degree of vacuum. (5) Auxiliary equipment: Such as condensers, filters, etc., used to improve the efficiency of the system or protect other components from contamination. (6) Control system: Modern vacuum systems are often equipped with automated control systems that can monitor and adjust various parameters to ensure stable operation. (7) Safety devices: To prevent accidents, the vacuum system should also be equipped with appropriate safety measures, such as pressure relief valves, alarm systems, etc.

[0057] In some embodiments, the chemical vapor deposition process exhaust gas treatment system 10 also includes a tubular heat exchanger. A tubular heat exchanger is connected between the furnace body 100 and the exhaust pipe 300, and is used to cool the gas after it has been treated in the heating chamber. A tubular heat exchanger is a device for heat exchange that achieves heating or cooling by allowing two fluids (typically liquids or gases) at different temperatures to flow inside and outside the tubes and transfer heat.

[0058] A tubular heat exchanger comprises: Tube bundle: This is the core of the heat exchanger, consisting of a series of parallel tubes. These tubes can be straight or U-shaped, fixed within a shell, and connected at both ends to a tube sheet. One fluid (called the tube-side fluid) flows within these tubes. Shell: The outer shell surrounding the tube bundle, in which another fluid (called the shell-side fluid) flows, typically entering from one side and exiting from the other. End caps: Located at both ends of the heat exchanger, used to seal off the space for the tube-side fluid and guide it in and out of the heat exchanger. Baffles: Placed within the shell to increase the turbulence of the shell-side fluid, thereby improving heat exchange efficiency. Nozzles and flanges: Used to connect external piping, allowing fluids to flow in and out of the heat exchanger.

[0059] In some embodiments, the furnace body 100 is also provided with a thermocouple interface and / or a water-cooled electrode interface. The thermocouple interface and the water-cooled electrode interface are used for connecting external thermocouples and water-cooled electrodes, respectively.

[0060] In some embodiments, the chemical vapor deposition process exhaust gas treatment system 10 also includes high-temperature resistant sealing rings. Sealing rings are provided at the connections between the inlet pipe 200, the exhaust pipe 300, and the furnace body 100.

[0061] In some embodiments, the furnace body 100 is further provided with an insulation layer 1000, which wraps around the heating mechanism 400.

[0062] In some embodiments, the heating mechanism 400 may be a plurality of heating rods. The plurality of heating rods extend along the height direction within the furnace body 100. The plurality of heating rods are spaced apart. Preferably, the plurality of heating rods are evenly spaced.

[0063] In some embodiments, insulation layers 1000 extend from both ends of the heating rod.

[0064] In some embodiments, a support frame 101 is provided at the lower part of the furnace body 100. The support frame 101 is used to support the entire furnace body 100.

[0065] An embodiment of this application also provides a method for treating exhaust gas from a chemical vapor deposition process.

[0066] A method for treating exhaust gas from a chemical vapor deposition (CVD) process, using a CVD exhaust gas treatment system 10, includes the following steps:

[0067] The process exhaust gas is controlled to enter the heating chamber inside the furnace body 100 through the air inlet pipe 200.

[0068] The heating mechanism 400 is used to heat the heating chamber, and the heating temperature controlled by the heating mechanism 400 is 1550℃~1800℃.

[0069] The gas decomposed in the heating chamber is discharged through the exhaust pipe 300.

[0070] For example, in one example, the heating mechanism 400 heats the heating chamber at a temperature of 1550°C, and in another example, the heating mechanism 400 heats the heating chamber at a temperature of 1800°C. It is easy to understand that in other examples, the heating mechanism 400 can also heat the heating chamber at a temperature of 1600°C, 1650°C, 1700°C, 1750°C, or other values ​​and any range between any two of the above values.

[0071] In summary, the above-mentioned chemical vapor deposition (CVD) process exhaust gas treatment system 10 uses a high-temperature furnace to decompose the byproducts in the CVD process, replacing the filter tank in the traditional technology. By heating the exhaust pipe 300, all the byproducts in the CVD process are introduced into the high-temperature furnace, where they are completely decomposed and discharged. This reduces the safety risks to personnel in the exhaust gas treatment process of the CVD process, improves production efficiency, saves production costs, and improves the production environment.

[0072] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0073] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0074] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements all fall within the scope of protection of the present invention. Therefore, the scope of protection of this patent should be determined by the appended claims.

Claims

1. A chemical vapor deposition process tail gas treatment system, characterized in that, The furnace includes a furnace body, an air inlet pipe, an exhaust pipe, and a heating mechanism. The furnace body is provided with a heating chamber. The air inlet pipe and the exhaust pipe are respectively connected to the furnace body and communicate with the heating chamber. The air inlet pipe is used to connect to the exhaust gas outlet of the CVD process. The heating mechanism is provided in the furnace body for heating the heating chamber.

2. The chemical vapor deposition process tail gas treatment system according to claim 1, characterized in that, The intake pipe is also equipped with a protective gas pipe, which is used to connect to an external protective gas source for inputting protective gas into the intake pipe.

3. The chemical vapor deposition process tail gas treatment system according to claim 1, characterized in that, The intake pipe is also equipped with a heating and insulation structure for heating and insulation of the intake pipe.

4. The chemical vapor deposition process tail gas treatment system according to claim 1, characterized in that, The heating chamber has a graphite box structure.

5. The chemical vapor deposition process tail gas treatment system according to claim 1, characterized in that, The heating chamber has a tortuous flow channel.

6. The chemical vapor deposition process tail gas treatment system according to any one of claims 1 to 5, characterized in that, The furnace body has a water-cooled jacket structure, which is fitted onto the outer shell of the furnace body and is used to cool the furnace body. And / or, the chemical vapor deposition process exhaust gas treatment system further includes a cooling mechanism disposed in the exhaust pipe.

7. The chemical vapor deposition process tail gas treatment system according to any one of claims 1 to 5, characterized in that, The chemical vapor deposition process exhaust gas treatment system also includes a filtration system connected to the exhaust pipe.

8. The chemical vapor deposition process tail gas treatment system according to any one of claims 1 to 5, characterized in that, The chemical vapor deposition process exhaust gas treatment system also includes a vacuum generation system, which is connected to the exhaust pipe and is used to evacuate the heating chamber through the exhaust pipe.

9. The chemical vapor deposition process tail gas treatment system according to any one of claims 1 to 5, characterized in that, The furnace body is also provided with a thermocouple interface and / or a water-cooled electrode interface, wherein the thermocouple interface and the water-cooled electrode interface are respectively used to connect external thermocouples and water-cooled electrodes. And / or, the chemical vapor deposition process tail gas treatment system further includes a high-temperature resistant sealing ring, and the sealing ring is provided at the connection between the air inlet pipe, the exhaust pipe and the furnace body.

10. A method for treating tail gas from a chemical vapor deposition process, characterized in that, The chemical vapor deposition process tail gas treatment system according to any one of claims 1 to 9 includes the following steps: The process exhaust gas is controlled to enter the heating chamber inside the furnace through the air inlet pipe; The heating mechanism is controlled to heat the heating chamber, and the heating temperature is controlled to be 1550℃~1800℃. The gas inside the heating chamber is controlled to be discharged through the exhaust pipe.

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