Semiconductor device

Abstract

The application provides a semiconductor device, and relates to the technical field of semiconductors. The semiconductor device comprises a device main body, a gas exhaust pipeline for exhausting gas, and at least one gas extraction device. The gas exhaust pipeline comprises a first pipe section located in the device main body, two ends of the first pipe section are oppositely arranged along the height direction of the device main body, and at least one first hole is formed in the pipe wall of the first pipe section. The gas extraction device is arranged in the first pipe section and connected with the first hole, so as to extract the gas in the device main body into the first pipe section. In the application, the first pipe section can make the gas flow in the device main body more uniform.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more particularly to a semiconductor device. Background Technology

[0002] In the semiconductor manufacturing field, semiconductor equipment can perform processes such as oxidation or deposition. For example, in the deposition process, reactive gases are introduced into a furnace tube, where they undergo a chemical reaction under certain conditions to form a thin film on the surface of the substrate. However, in practical applications, uneven gas distribution often occurs at different locations within the semiconductor equipment, resulting in poor uniformity of the film thickness deposited on the substrate. Summary of the Invention

[0003] This application provides a semiconductor device, which includes:

[0004] Equipment body;

[0005] An exhaust pipe for discharging gas, the exhaust pipe including a first pipe section located inside the main body of the equipment, the two ends of the first pipe section being arranged opposite each other along the height direction of the main body of the equipment, and at least one first hole being formed in the pipe wall of the first pipe section.

[0006] At least one air extraction device is disposed in the first pipe section and connected to the first hole to extract gas from the main body of the device into the first pipe section.

[0007] In some possible implementations, there are at least two first holes, which are aligned and arranged on the wall of the first pipe segment along the extension direction of the first pipe segment.

[0008] In some possible implementations, the opening size of the at least two first holes gradually increases along the direction from the bottom to the top of the device body.

[0009] In some possible implementations, the semiconductor device further includes a gas supply line for providing gas;

[0010] The gas supply pipeline includes a second pipe section, which is located inside the main body of the equipment, and the two ends of the second pipe section are arranged opposite each other along the height direction of the main body of the equipment.

[0011] In some possible implementations, the first hole is located on the side of the first pipe segment adjacent to the second pipe segment.

[0012] In some possible implementations, the semiconductor device further includes a gas extraction system connected to the first pipe section to discharge the gas in the first pipe section outside the device body.

[0013] In some possible implementations, the exhaust pipe further includes a third pipe section, one end of which is connected to the end of the first pipe section near the bottom of the device body, and the other end of which is located outside the device body and connected to the extraction system.

[0014] In some possible implementations, the device body is provided with a plurality of support platforms arranged sequentially along the height direction of the device body, and the support platforms are used to support the substrate;

[0015] The first pipe segment is disposed on the side of the support platform and extends along the arrangement direction of the support platform, and the first hole on the first pipe segment faces the support platform.

[0016] In some possible implementations, the air extraction device includes an air extraction pump, with each of the first holes corresponding to one of the air extraction pumps.

[0017] In some possible implementations, the semiconductor device includes a furnace tube;

[0018] Alternatively, the semiconductor device may include a thin-film deposition device.

[0019] In addition to the technical problems solved by the embodiments of this application, the technical features constituting the technical solutions, and the beneficial effects brought about by the technical features of these technical solutions described above, other technical problems that the semiconductor devices provided by the embodiments of this application can solve, other technical features included in the technical solutions, and the beneficial effects brought about by these technical features will be further described in detail in the specific implementation. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0021] Figure 1 This is a schematic diagram of the structure of a semiconductor device;

[0022] Figure 2 This is a schematic diagram of the structure of a semiconductor device according to an embodiment of this application;

[0023] Figure 3 This is a schematic diagram of the structure of another semiconductor device in an embodiment of this application;

[0024] Figure 4This is a schematic diagram of the first hole on the first pipe segment in an embodiment of this application.

[0025] Explanation of reference numerals in the attached figures:

[0026] 10-Semiconductor equipment;

[0027] 11-Reaction chamber;

[0028] 12-Main body of the equipment;

[0029] 20 - Gas supply pipeline;

[0030] 21-Second Pipe Section;

[0031] 22-Fourth pipe section;

[0032] 30 - Exhaust pipe;

[0033] 31-First pipe section;

[0034] 32 - Third pipe section;

[0035] 33 - First hole;

[0036] 40 - Air extraction device;

[0037] 50 - Support platform. Detailed Implementation

[0038] See related technologies. Figure 1 In the furnace tube, the process gas (special gas) follows a parabolic trajectory after passing through the gas supply line 20. Figure 1 As shown by the dashed line, this results in a film that is thicker in the middle and thinner at the edges when formed on the substrate. The exhaust pipe 30 of the furnace tube is often located at the bottom of the furnace tube, which makes the adsorption of process gases at the bottom of the furnace tube faster and the adsorption of process gases at the top of the furnace tube slower. As a result, the uniformity of the film on the substrate located at the top of the furnace tube is worse than that of the film on the substrate located at the bottom of the furnace tube.

[0039] To address the uneven distribution of process gases at different heights within the furnace tube, and the uneven thickness of the films deposited on the substrate at different heights, one approach is to place dummy substrates with specific patterns at locations with poor uniformity within the furnace tube to absorb the process gases. However, dummy substrates are expensive, increasing the cost of the deposition process. Another approach is to vary the gas flow rate or pressure at different heights within the furnace tube; however, this can negatively impact the film formation efficiency on the substrate.

[0040] Therefore, this application provides a semiconductor device by providing a first tube segment with a first hole and a gas extraction device in the first tube segment. The gas extraction device is connected to the first hole to draw gas from the main body of the device into the first tube segment, thereby adjusting the gas flow rate at the corresponding position and achieving a uniform distribution of gas flow rate in the reaction chamber, so that the film thickness formed on the substrate at different height positions is uniform.

[0041] To make the above-mentioned objectives, features, and advantages of the embodiments of this application more apparent and understandable, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0042] See Figures 2 to 4 This application provides a semiconductor device 10, which may include a furnace tube, such as a low-pressure deposition furnace tube; or, the semiconductor device 10 may include a thin film deposition apparatus. The semiconductor device 10 can be used to form a desired thin film on a substrate, wherein the material of the thin film includes, for example, silicon oxide, silicon nitride, silicon oxynitride, polycrystalline silicon, etc.

[0043] like Figure 2 and Figure 3 As shown, the semiconductor device 10 includes a device body 12, within which a reaction chamber 11 is provided for performing a corresponding process (e.g., a thin film deposition process). A support stage 50 is also disposed within the reaction chamber 11 of the device body 12 for supporting a substrate, such as a silicon wafer. Exemplarily, there are multiple support stages 50, which are arranged sequentially along a predetermined direction, for example, the multiple support stages 50 are arranged sequentially along the height direction of the device body 12, such as... Figure 2 and Figure 3 The Z direction shown is as follows: Figure 2 and Figure 3 As shown, multiple support platforms 50 are arranged vertically.

[0044] Continue reading Figure 2 and Figure 3 The semiconductor device 10 also includes an exhaust pipe 30 for discharging gas. At least a portion of the exhaust pipe 30 is disposed within and connected to the reaction chamber 11. The exhaust pipe 30 includes a first pipe section 31 located within the device body 12, with both ends of the first pipe section 31 positioned opposite each other along the height of the device body 12. At least one first hole is formed in the wall of the first pipe section 31.

[0045] like Figure 2 and Figure 3 As shown, the first pipe segment 31 is disposed within the reaction chamber 11. One end of the first pipe segment 31 is adjacent to the bottom of the main body 12 of the equipment, that is, adjacent to the bottom wall of the reaction chamber 11. For ease of description, this end is defined as the first end of the first pipe segment 31, which is the bottom end of the first pipe segment 31. The other end of the first pipe segment 31 is adjacent to the top of the main body 12 of the equipment, that is, adjacent to the top wall of the reaction chamber 11. For ease of description, this end is defined as the second end of the first pipe segment 31, which is the top end of the first pipe segment 31.

[0046] In some possible examples, such as Figure 2 As shown, the second end of the first pipe segment 31 can be closed. In some other possible examples, such as Figure 3 As shown, the second end of the first pipe section 31 can be open, that is, the second end of the first pipe section 31 is connected to the reaction chamber 11. The second end of the first pipe section 3 does not need to be equipped with an air extraction device 40.

[0047] Taking a plane perpendicular to the extension direction of the first pipe segment 31 as a cross-section, the cross-sectional shape of the first pipe segment 31 can be circular, elliptical, rectangular, etc. The cross-sectional area of ​​the first pipe segment 31 is constant, that is, the area of ​​the pipe cross-section of the first pipe segment 31 remains unchanged along the extension direction of the first pipe segment 31. In other examples, the cross-sectional area of ​​the first pipe segment 31 can also gradually decrease from the first end to the second end of the first pipe segment 31.

[0048] See Figure 4 At least one first hole 33 is provided on the wall of the first pipe section 31. The first hole 33 penetrates the wall of the first pipe section 31, so that the gas in the reaction chamber 11 enters the first pipe section 31 through the first hole 33 and flows towards the first end of the first pipe section 31 to be discharged from the reaction chamber 11. The first hole 33 can be a circular hole, an elliptical hole, or a rectangular hole, and the embodiments of this application are not limited to this.

[0049] In some possible examples, a first hole 33 is provided on the wall of the first tube segment 31, the first hole 33 being adjacent to the second end of the first tube segment 31, to adjust the airflow velocity at the top of the reaction chamber 11, reduce the airflow velocity difference between the top and bottom of the reaction chamber 11, and improve the uniformity of film formation on the wafer at different height positions.

[0050] In other possible examples, at least two first holes 33 are provided on the wall of the first pipe segment 31, and the at least two first holes 33 are spaced apart along the extension direction of the first pipe segment 31. The at least two first holes 33 are aligned and arranged on the wall of the first pipe segment 31 along the extension direction of the first pipe segment 31, that is, the arrangement direction of the at least two first holes 33 is parallel to the axial direction of the first pipe segment 31, so that the at least two first holes 33 are located on the same side of the first pipe segment 31, so as to adjust the gas flow rate and gas flow distribution in the reaction chamber 11, so that the gas flow rate in the entire reaction chamber 11 is uniform.

[0051] The first pipe segment 31 is disposed on the side of the support platform 50 and extends along the arrangement direction of the support platform 50, for example, the height direction of the main body 12 of the equipment. Multiple first holes 33 on the first pipe segment 31 face the support platform 50, allowing the multiple first holes 33 to be opposite to the substrate, enabling gas to flow smoothly across the substrate and ensuring the uniformity of the thin film formed on the substrate. The shapes of the first holes 33 can be the same or different; this embodiment is not limited in this respect.

[0052] See Figure 2 Along the direction from the bottom to the top of the device body 12, the opening size of at least two first holes 33 gradually increases. Wherein, when the shape of the first hole 33 is circular, the opening size of the first hole 33 refers to the diameter of the first hole 33. When the shape of the first hole 33 is other than circular, the opening size of the first hole 33 refers to the equivalent diameter of the first hole 33.

[0053] Thus, along the direction away from the bottom of the device body 12, the gas flow rate of the multiple first holes 33 on the first pipe section 31 gradually increases. The gas flow rate of the first holes 33 near the bottom of the device body 12 is smaller, while the gas flow rate of the first holes 33 near the top of the device body 12 is larger. This allows more gas near the top of the device body 12 to enter the first pipe section 31, and the gas flow velocity at the top and bottom of the device body 12 tends to be consistent, improving the thickness uniformity of the thin film formed on the substrate at different heights of the device body 12. The gas flow direction is as follows: Figure 2 and Figure 3 The dotted line shown is basically horizontal and parallel to the top surface of the support platform 50.

[0054] Continue reading Figure 1The exhaust pipe 30 also includes a third pipe section 32. Exemplarily, the third pipe section 32 is placed horizontally. One end of the third pipe section 32 is connected to one end of the first pipe section 31 near the bottom of the equipment body 12, and the first pipe section 31 and the third pipe section 32 are connected sequentially. Exemplarily, one end of the third pipe section 32 is connected to the first end of the first pipe section 31. The other end of the third pipe section 32 extends outside the equipment body 12 to discharge gas from the first pipe section 31. The third pipe section 32 and the first pipe section 31 can be an integral structure to ensure a sealed connection.

[0055] The cross-sectional profiles of the pipe sections at the points where the third pipe section 32 and the first pipe section 31 meet are aligned. The cross-sectional area of ​​the third pipe section 32 is constant, meaning that the area of ​​the pipe cross-section of the third pipe section 32 remains unchanged along its extension direction, so as to ensure uniform gas flow velocity within the third pipe section 32. In some possible examples, the cross-sectional area of ​​the third pipe section 32 is equal to that of the first pipe section 31.

[0056] In some possible implementations, the semiconductor device 10 further includes a evacuation system connected to the first pipe section 31 to expel gas from the device body 12. Exemplarily, the evacuation system includes a vacuum pump to remove gas from the first pipe section 31. In an example where the exhaust pipe 30 also includes a third pipe section 32, the evacuation system is located outside the device body 12 and is sealed to the end of the third pipe section 32 away from the first pipe section 31. Exemplarily, the corresponding ends of the evacuation system and the third pipe section 32 are connected by a sealing ring.

[0057] To achieve the corresponding process, the semiconductor device 10 also includes a gas supply line 20 for providing gas. The gas supply line 20 is connected to a gas source to introduce a corresponding gas, such as a reaction gas or a cleaning gas, into the reaction chamber 11. The gas supply line 20 includes a second pipe section 21, which is located inside the device body 12, and the two ends of the second pipe section 21 are arranged opposite each other along the height direction of the device body 12.

[0058] The second pipe section 21 is disposed within the reaction chamber 11. One end of the second pipe section 21 is adjacent to the bottom of the main body 12 of the equipment, that is, adjacent to the bottom wall of the reaction chamber 11. For ease of description, this end is defined as the first end of the second pipe section 21, which is the bottom end of the second pipe section 21. The other end of the second pipe section 21 is adjacent to the top of the main body 12 of the equipment, that is, adjacent to the top wall of the reaction chamber 11. For ease of description, this end is defined as the second end of the second pipe section 21, which is the top end of the second pipe section 21.

[0059] Taking a plane perpendicular to the extension direction of the second pipe segment 21 as a cross-section, the cross-sectional shape of the second pipe segment 21 can be circular, elliptical, rectangular, etc. The cross-sectional area of ​​the second pipe segment 21 is constant, that is, the area of ​​the pipe cross-section of the second pipe segment 21 remains unchanged along the extension direction of the second pipe segment 21. In other examples, the cross-sectional area of ​​the second pipe segment 21 can also gradually decrease along the direction from the second end of the second pipe segment 21 to the first end of the second pipe segment 21.

[0060] The second pipe section 21 has at least two second holes (not shown in the figure) on its wall, and the at least two second holes are spaced apart along the extension direction of the second pipe section 21. Each second hole penetrates the wall of the second pipe section 21 so that gas in the second pipe section 21 enters the reaction chamber 11 through the second hole. The second hole can be a circular hole, an elliptical hole, or a rectangular hole, and this embodiment is not limited to this.

[0061] At least two second holes are aligned and arranged on the wall of the second pipe section 21 along the extension direction of the second pipe section 21, that is, the arrangement direction of the at least two second holes is parallel to the axial direction of the second pipe section 21, so that the at least two second holes are located on the same side of the second pipe section 21, so as to adjust the airflow velocity and airflow distribution in the reaction chamber 11.

[0062] In some possible examples, the opening size of at least two second holes gradually increases along the direction from the bottom to the top of the device body 12 to improve the gas distribution within the reaction chamber 11, avoiding an excess of gas at the bottom and a deficiency at the top of the reaction chamber 11, thereby improving the uniformity of the film thickness formed on the substrate. Wherein, when the shape of the second hole is circular, the opening size of the second hole refers to the diameter of the second hole. When the shape of the second hole is other than circular, the opening size of the second hole refers to the equivalent diameter of the second hole.

[0063] In some possible implementations, the first hole 33 is located on the side of the first pipe section 31 adjacent to the second pipe section 21, so that the first hole 33 is opposite to the second pipe section 21. In this way, the second pipe section 21 is inlet and the first hole 33 is outlet, which can better regulate the gas flow rate in the reaction chamber 11.

[0064] The first hole 33 can correspond one-to-one with the second hole and be aligned along the height of the main body 12 of the equipment, so that the gas entering from the second hole can enter the first pipe section 31 through the first hole 33, and the gas flow direction is basically horizontal. In this way, the gas flow turbulence in the reaction chamber 11 can be reduced.

[0065] For example, the first pipe segment 31 and the second pipe segment 21 are respectively disposed on opposite sides of the support platform 50, such as the first pipe segment 31 being disposed on the right side of the support platform 50 and the second pipe segment 21 being disposed on the left side of the support platform 50. Both the first pipe segment 31 and the second pipe segment 21 extend along the arrangement direction of the support platform 50. A plurality of first holes 33 on the first pipe segment 31 face the support platform 50, and a plurality of second holes on the second pipe segment 21 also face the support platform 50, and each second hole is opposite to a first hole 33.

[0066] Continue reading Figure 2 and Figure 3 The gas supply line 20 also includes a fourth pipe section 22, which, for example, is placed horizontally. One end of the fourth pipe section 22 is connected to one end of the second pipe section 21 near the bottom of the equipment body 12. The fourth pipe section 22 and the second pipe section 21 are connected sequentially, for example, one end of the fourth pipe section 22 is connected to the first end of the second pipe section 21. The other end of the fourth pipe section 22 extends outside the equipment body 12 and is connected to a gas source. The fourth pipe section 22 and the second pipe section 21 can be an integral structure to ensure a sealed connection between them.

[0067] The cross-sectional profiles of the pipe sections at the ends where the fourth pipe section 22 and the second pipe section 21 meet are aligned. The cross-sectional area of ​​the fourth pipe section 22 is constant, meaning that the area of ​​the pipe cross-section of the fourth pipe section 22 remains unchanged along its extension direction, so as to ensure uniform gas flow velocity within the fourth pipe section 22. In some possible examples, the cross-sectional area of ​​the fourth pipe section 22 is equal to the cross-sectional area of ​​the third pipe section 32.

[0068] Continue reading Figures 2 to 4 The semiconductor device 10 also includes at least one suction device 40, which is disposed in the first pipe section 31 and connected to the first hole 33 to draw gas from the device body 12 into the first pipe section 31. Using the suction device 40, gas at different heights can be drawn into the first pipe section 31 to adjust the gas flow rate at the corresponding position, achieving horizontal gas flow and thus a uniform distribution of gas flow rate within the reaction chamber 11.

[0069] For example, at least two suction devices 40 are provided, arranged along the extension direction of the first pipe segment 31. The number of suction devices 40 corresponds to the number of first holes 33, such that each first hole 33 is correspondingly and sealingly connected to one suction device 40. Figure 2 and Figure 3 As shown, by setting up the gas extraction device 40, the gas entering the gas supply pipeline 20 is basically horizontal, and the uniformity of the gas flow rate in the reaction chamber 11 is good.

[0070] In some possible implementations, the evacuation device 40 includes evacuation pumps, with each of the first holes 33 corresponding to one evacuation pump. The evacuation pumps can be, for example, miniature evacuation pumps, and each evacuation pump can be individually controlled by a controller, allowing the evacuation pumps to operate independently of each other. This allows for adjustment of the operating status of the evacuation pumps at different locations as needed, thereby adjusting the gas flow rate at different heights within the reaction chamber 11.

[0071] The semiconductor device 10 provided in this embodiment includes a device body 12, an exhaust pipe 30 for discharging gas, and at least one extraction device 40. The exhaust pipe 30 includes a first pipe section 31 located within the device body 12. The two ends of the first pipe section 31 are positioned opposite each other along the height direction of the device body 12, and at least one first hole 33 is formed in the wall of the first pipe section 31. The extraction device 40 is disposed in the first pipe section 31 and connected to the first hole 33 to extract gas from the device body 12 into the first pipe section 31. Using the extraction device 40, gas at different heights can be drawn into the first pipe section 31 to adjust the gas flow rate at corresponding positions, thereby achieving a uniform distribution of gas flow rate within the reaction chamber 11, resulting in uniform film thickness formed on the substrate at different heights.

[0072] The embodiments or implementation methods described in this specification are presented in a progressive manner, with each embodiment focusing on the differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. In the description of this specification, the terms "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with an embodiment or example that are included in at least one embodiment or example of this application.

[0073] In this specification, the illustrative expressions of the terms used do not necessarily refer to the same implementation or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more implementations or examples.

[0074] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A semiconductor device, characterized in that, include: Equipment body; An exhaust pipe for discharging gas, the exhaust pipe including a first pipe section located inside the main body of the equipment, the two ends of the first pipe section being arranged opposite each other along the height direction of the main body of the equipment, and at least one first hole being formed in the pipe wall of the first pipe section. At least one air extraction device is disposed in the first pipe section and connected to the first hole to extract gas from the main body of the device into the first pipe section.

2. The semiconductor device according to claim 1, characterized in that, The first hole has at least two holes, which are aligned and arranged on the wall of the first pipe segment along the extension direction of the first pipe segment.

3. The semiconductor device according to claim 2, characterized in that, Along the direction from the bottom to the top of the device body, the opening size of the at least two first holes gradually increases.

4. The semiconductor device according to claim 1, characterized in that, The semiconductor device also includes a gas supply line for providing gas; The gas supply pipeline includes a second pipe section, which is located inside the main body of the equipment, and the two ends of the second pipe section are arranged opposite each other along the height direction of the main body of the equipment.

5. The semiconductor device according to claim 4, characterized in that, The first hole is located on the side of the first pipe segment adjacent to the second pipe segment.

6. The semiconductor device according to any one of claims 1-5, characterized in that, The semiconductor device further includes a gas extraction system connected to the first pipe section, which discharges the gas in the first pipe section outside the device body.

7. The semiconductor device according to claim 6, characterized in that, The exhaust pipe also includes a third pipe section, one end of which is connected to the end of the first pipe section near the bottom of the main body of the equipment, and the other end of which is located outside the main body of the equipment and connected to the air extraction system.

8. The semiconductor device according to any one of claims 1-5, characterized in that, The main body of the device is provided with a plurality of support platforms arranged sequentially along the height direction of the main body of the device, and the support platforms are used to support the substrate; The first pipe segment is disposed on the side of the support platform and extends along the arrangement direction of the support platform, and the first hole on the first pipe segment faces the support platform.

9. The semiconductor device according to any one of claims 1-5, characterized in that, The air extraction device includes an air extraction pump, and each of the first holes is connected to one of the air extraction pumps.

10. The semiconductor device according to any one of claims 1-5, characterized in that, The semiconductor device includes a furnace tube; Alternatively, the semiconductor device may include a thin-film deposition device.

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