Monument structure system and method

Abstract

A monument structure system and method. An exit passage has a first portion and a second portion, the first portion having a first diameter and the second portion having a second diameter, the first diameter being about 1 to about 3 times the second diameter, a transition portion disposed between the first portion and the second portion, the transition portion having a chamfer feature disposed at an angle between about 20 degrees and about 35 degrees from an outer wall of the second portion.

Description

Technical Field

[0001] This disclosure generally relates to gas flow systems and components thereof. More specifically, this disclosure relates to systems and methods for efficient precursor gas flow. Background Technology

[0002] Vapor phase reactors can be used in a variety of applications, such as chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), atomic layer deposition (ALD), plasma-enhanced ALD (PEALD), substrate pre-cleaning, and etching processes. For example, vapor phase reactors can be used to deposit materials, etch layers, and / or clean materials on substrates to form electronic devices, such as semiconductor devices, flat panel display devices, photovoltaic devices, and microelectromechanical systems (MEMS).

[0003] A typical gas-phase reactor system comprises one or more reactors, each including a reaction chamber and one or more gas sources fluidly connected to the reaction chamber. In many applications, such as ALD, PEALD, and other circulating processes, precursor gases flow through various components and pathways. Variations in the flow characteristics of the precursor gas can tend to cause condensation and / or deposition of the precursor material, which is generally undesirable.

[0004] Any discussion set forth in this section (including discussions of problems and solutions) is included in this disclosure and is for the purpose of providing background to this disclosure only. Such discussion should not be construed as an admission that any or all information was known at the time of making this invention or otherwise constitutes prior art. Summary of the Invention

[0005] Various embodiments of this disclosure relate to an outlet channel including a first portion having a first diameter and a second portion having a second diameter, the first diameter being about 1 to about 3 times the second diameter, a transition portion disposed between the first portion and the second portion, the transition portion having a chamfered feature, which is disposed at an angle between about 20 degrees and about 35 degrees with respect to the outer wall of the second portion.

[0006] In various embodiments, the length of the transition portion is approximately one to approximately three times the second diameter.

[0007] In various embodiments, the exit channel is formed within the monolithic block.

[0008] In various embodiments, the outlet channel also includes a gasket that at least partially surrounds the outlet channel.

[0009] In various embodiments, the chamfer feature extends around the circumference of the transition portion.

[0010] In various embodiments, the chamfer feature is truncated conical.

[0011] In various embodiments, the angle is between 20° and 30°.

[0012] In various embodiments, the first diameter is about 1.5 to about 2 times the second diameter.

[0013] In various embodiments, a gas flow system having an internal passage disposed therein is provided, including a first portion of the internal passage, a second portion of the internal passage, and a transition portion disposed between the first portion and the second portion, the transition portion being in fluid communication with the first portion and the second portion, the first portion having a first diameter, the second portion having a second diameter, the first diameter being about 1 to about 3 times the second diameter.

[0014] In various embodiments, the transition portion includes a chamfered feature set at an angle between about 20 degrees and about 35 degrees to the outer wall of the second portion.

[0015] In various embodiments, the length of the transition portion is approximately one to approximately three times the second diameter.

[0016] In various embodiments, the monument-shaped block is integral.

[0017] In various embodiments, the gas flow system also includes a gasket that at least partially surrounds the internal passageway.

[0018] In various embodiments, the chamfer feature extends around the circumference of the transition portion.

[0019] In various embodiments, the chamfer feature is truncated conical.

[0020] In various embodiments, the angle is between 20° and 30°.

[0021] In various embodiments, the first diameter is about 1.5 to about 2 times the second diameter.

[0022] In various embodiments, a method is provided comprising drilling a first portion of an internal passage in a monolithic block, drilling a transition portion of the internal passage in the monolithic block, wherein drilling is performed at an angle to the axial center of the transition portion to form a chamfer feature, drilling a second portion of the internal passage in the monolithic block, the second portion being in fluid communication with the transition portion and the first portion, the first portion having a first diameter, the second portion having a second diameter, the first diameter being about 1 to about 3 times the second diameter.

[0023] In various embodiments, the angle is between about 20 degrees and about 35 degrees with respect to the outer wall of the second part.

[0024] In various embodiments, the length of the transition portion is approximately one to approximately three times the second diameter.

[0025] In various embodiments, the length of the transition portion is approximately one to approximately three times the second diameter.

[0026] These and other embodiments will be readily understood by those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings. The invention is not limited to any particular embodiment disclosed. Attached Figure Description

[0027] Exemplary embodiments of this disclosure can be more fully understood when considered in conjunction with the following illustrative drawings, and by referring to the detailed description and claims.

[0028] Figure 1 Gas flow systems according to various embodiments of the present disclosure are shown.

[0029] Figure 2 The gas flow system structure according to various embodiments of the present disclosure is shown.

[0030] Figure 3 Reactor systems according to various embodiments of the present disclosure are shown.

[0031] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements may be exaggerated relative to other elements to aid in understanding the embodiments shown in this disclosure. Detailed Implementation

[0032] Although certain embodiments and examples are disclosed below, it should be understood that the invention extends beyond the specific embodiments and / or uses disclosed herein, as well as their obvious modifications and equivalents. Therefore, it is intended that the scope of the disclosed invention should not be limited to the specific embodiments described below.

[0033] This disclosure generally relates to systems and methods for feeding during gas-phase reaction processes (such as atomic layer deposition (ALD) processes or other cyclic deposition processes), but usefulness can be found in many processes, including CVD, plasma-enhanced processes, etching processes, cleaning processes, etc.

[0034] As used herein, the term substrate can refer to any one or more underlying materials, including materials and / or materials that may be deposited thereon. Substrates can include bulk materials such as silicon (e.g., single-crystal silicon), other group IV materials (e.g., germanium), or compound semiconductor materials (e.g., GaAs), and can include one or more layers overlaid or under the bulk material. For example, a substrate can include a patterned stack of several layers covering the bulk material. The patterned stack can vary depending on the application. Furthermore, a substrate can include various gaps formed on the substrate surface, such as recesses, vias, spaces between lines, trenches, etc.

[0035] In this disclosure, the gas may include materials that are gaseous at normal temperature and pressure (NTP), evaporated solids and / or evaporated liquids, and may consist of a single gas or a mixture of gases, depending on the circumstances. Gases other than the process gas, i.e., gases introduced without passing through gas distribution components, other gas distribution devices, etc., may be used, for example, to seal the reaction space, and may include sealing gases, such as rare gases. In this regard, chemically inert gases may flow through the reaction chamber together with the process gas (i.e., containing precursor gases). As used herein, "inert gas" may refer to a chemically inert gas, such as a rare gas, or a relatively inert gas, such as nitrogen (N2).

[0036] In this disclosure, any two numbers of a variable may constitute a feasible range of the variable, and any range indicated may include or exclude endpoints. Additionally, in various embodiments, any value of the indicated variable (whether or not it is indicated by "about") may refer to an exact value or an approximate value and include equivalents, and may refer to an average, median, representative value, multi-value, etc. For example, the term "about" may refer to + / - 20%, 10%, 5%, 2%, or 1% of a value. Furthermore, in this disclosure, the terms "comprising," "including," "consisting of," and "having," and their equivalents, may independently refer in some embodiments to generally or broadly comprising, substantially consisting of, or composed of. According to various aspects of this disclosure, the meaning of any definition of a term does not necessarily exclude the common and customary meaning of the term.

[0037] Now turn to the attached image. Figure 1 A gas flow system 100 according to at least one embodiment of the present disclosure is shown. The gas flow system 100 includes a monument 102 and a base block 101. In various embodiments, the monument 102 and the base block 101 are integral. The base block 101 includes channels therein configured to provide fluid communication between the base block 101 and the monument 102. A base bottom inlet 103 of the base block 101 includes a channel disposed in the base block 101. A base intermediate inlet 105 of the base block 101 includes a channel disposed in the base block 101. A base top outlet 107 of the base block 101 includes a channel disposed in the base block 101. Each of the base bottom inlet 103, base intermediate inlet 105, and base top outlet 107 may be formed in the base block 101 by drilling, machining, milling, boring, EDM, or otherwise. In various embodiments, each of the base bottom inlet 103, base middle inlet 105, and base top outlet 107 is formed during additive manufacturing of the monument 102 and / or base block 101.

[0038] The monument 102 includes channels configured to provide fluid communication between the base block 101 and the monument 102. The bottom inlet 104 of the monument 102 includes a channel disposed within the monument 102. The intermediate inlet 106 of the monument 102 includes a channel disposed within the monument 102. The top outlet 108 of the monument 102 includes a channel disposed within the monument 102. Each of the bottom inlet 104, intermediate inlet 106, and top outlet 108 may be formed in the monument 102 by drilling, machining, milling, boring, EDM, or otherwise. The top outlet 108 and the base top outlet 107 form an outlet channel; note that the terms channel and passage are used interchangeably herein.

[0039] The monument 102 and the base block 101 can be configured for use with a reaction vessel, which may be configured as a CVD reactor, a circulating deposition process reactor (e.g., a circulating CVD reactor), an ALD reactor, a PEALD reactor, a clean chamber, etc., any of which may include plasma equipment, such as direct and / or remote plasma equipment. The reaction vessel may be formed of a suitable material, such as quartz, metal, etc., and may be configured to hold one or more substrates for processing.

[0040] The precursor gas source and exhaust system may be in fluid communication with the base block 101. As used herein, the precursor gas consists of precursor materials in or substantially in a gaseous state. For example, various materials (e.g., carbon, hydrogen) and metals (e.g., molybdenum) may be present in the gaseous precursor gas. The precursor gas may flow through the base block 101 and into the bottom inlet 104 and the intermediate inlet 106. The exhaust flow may be drawn in through the top outlet 108 and the return section 114. Due to changes in temperature and / or pressure, various precursors are at risk of leaving the gaseous state. In this way, condensation and / or deposition of the precursor material may form within the monument 102 and / or the base block 101. Such condensation and / or deposition of the precursor material tends to form as fluid flow changes through transition zones of various volumes and internal surface features. In such regions, flow characteristics may tend to impart turbulence and / or promote recirculation. According to various embodiments, this tendency for condensation and / or deposition is reduced and / or eliminated.

[0041] refer to Figure 2The transition portion 110 of the top outlet 108 is shown in fluid communication with the return portion 114. The return portion 114 is cylindrical or substantially cylindrical in shape with a constant diameter D2. The transition portion has an increasing diameter that moves axially toward the top outlet 108. Therefore, in cross-section, the transition portion 110 can be truncated conical in shape. In this respect, the transition portion 110 can be referred to as a chamfer or bevel feature. The chamfer feature can extend around the circumference of the transition portion 110. However, in cross-section, the transition portion 110 can take the form of another geometry. The angle between the wall of the return portion 114 and the wall of the transition portion is angle q.

[0042] In various embodiments, the angle q is important for the fluid flow dynamics within the gas flow system 100. An angle q that is too large may alter flow characteristics and tend to lead to undesirable condensation and / or deposition. An angle q that is too small may affect package size and other variables. In various embodiments, the angle q is between 105° and 125° and / or between 110° and 120°. In other words, in various embodiments, the angle q measured from the line parallel to D2 to the transition portion 112 is between 15° and 35° and / or between 20° and 30°. Angles q within this range tend to reduce turbulence in the flow, tend to avoid subsequent reflow, and tend to improve flow characteristics, making it more laminar than at angle q values ​​outside this range.

[0043] Another factor enhancing flow characteristics is the ratio of D1 to D2. D1 is shown as the diameter of the top outlet 108, representing the region near the transition from the monument 102 to the base block 101. D2 is shown as the diameter of the return section 114. As the exhaust flow 124 moves through the cross-sectional area surrounded by D1 into the transition section, the cross-sectional volume decreases, thus affecting flow characteristics. In various embodiments, the ratio of D1 to D2 is 3:1 to 1.1:1, and / or 2.5:1 to 1.25:1, and / or 2:1 to 1.5:1. Ratios of D1 to D2 within these ranges tend to reduce turbulence and subsequent reflow.

[0044] The axial length of the transition portion 110 can vary in response to the value of angle q. In this way, larger values ​​of angle q tend to increase the axial length of the transition portion 110, while smaller values ​​of angle q tend to decrease the axial length of the transition portion 110. Furthermore, in various embodiments, the axial length of the transition portion is related to the diameter D2. In various embodiments, the ratio of the axial length of the transition portion to the diameter D2 is 4:1 to 1:1, and / or 2.5:1 to 1.5:1, and / or 2:1 to 3:1. A ratio of the axial length of the transition portion to the diameter D2 within these ranges tends to reduce turbulence and subsequent reflow.

[0045] The gas flow system 100 can be constructed using any suitable method. For example, the manufacturing method may include drilling a first portion of the internal passage in a monolithic block, drilling a transition portion of the internal passage in the monolithic block, wherein the drilling is performed at an angle to the axial center of the transition portion to form a chamfer feature; drilling a second portion of the internal passage in a monolithic block, the second portion being in fluid communication with the transition portion and the first portion, the first portion having a first diameter, and the second portion having a second diameter, the first diameter being about one to about three times the second diameter.

[0046] Now go to Figure 3 The gas flow system disclosed herein can be used in conjunction with various reactor systems (e.g., exemplary reactor system 300). Reactor system 300 includes a reaction chamber 304, a base 306 holding a substrate 330 during processing, a gas distribution system 308 (e.g., a spray head) distributing one or more blocking molecules, precursors, and / or reactants to the surface of substrate 330, one or more sources of blocking molecules, precursors, or reactants 310, 312, and / or 313, and / or carrier gas and / or purge gas sources 314, fluidly coupled to reaction chamber 304 via corresponding lines 316, 318, 319, and 320 and corresponding valves or controllers 322, 323, 325, and 327. Substrate 330 may include a substrate or structure as described herein. A purge gas / carrier gas 324 from gas source 314 can flow to and through reaction chamber 304 to act as a carrier gas, and / or purge or remove any excess blocking molecules, precursors, reactants, or other unwanted materials from reaction chamber 304. Sources 310, 312, and 313 may include containers and blocking molecules, precursors, or reactants as described herein. For example, source 310 may include a container and blocking molecules 315; source 312 may include a container and precursor 317; and source 313 may include a container and reactant 321. Reactor system 300 may include additional sources. System 300 may also include a vacuum source 328 fluidly coupled to reaction chamber 304. Vacuum source 328 may be configured to expel blocking molecules, precursors, reactants, purge gas, byproducts, or other materials from reaction chamber 304.

[0047] The reactor system 300 also includes a controller 352. The controller 352 can be configured to perform various functions and / or steps as described herein. The controller 352 may include one or more microprocessors, memory elements, and / or switching elements to perform various functions. Although shown as a single unit, the controller 352 may alternatively include multiple devices. The controller 352 can be used to control gas flows (e.g., by monitoring flow rates and controlling valves 322, 323, 325, and / or 327), motors, heaters, cooling devices, and / or vacuum sources 328 to perform various processes. Furthermore, when the system includes two or more reaction chambers, the two or more reaction chambers may be coupled to the same / shared controller.

[0048] As stated above, the exemplary embodiments of this disclosure described above do not limit the scope of the invention, as these embodiments are merely examples of embodiments of the invention. In fact, various modifications to this disclosure, such as alternative useful combinations of the described elements, in addition to those shown and described herein, will become apparent to those skilled in the art from the description.

Claims

1. An export channel, comprising: A first portion having a first diameter and a second portion having a second diameter, wherein the first diameter is approximately 1 to approximately 3 times the second diameter; A transition section is located between the first and second sections; The transition section has a chamfered feature, which is set at an angle between approximately 20 degrees and approximately 35 degrees to the outer wall of the second section.

2. The export channel according to claim 1, wherein, The length of the transition portion is approximately one to approximately three times the second diameter.

3. The export channel according to claim 2, wherein, The exit channel is formed within the monolithic block.

4. The outlet channel according to claim 3, further comprising a gasket at least partially surrounding the outlet channel.

5. The export channel according to claim 3, wherein, The chamfered feature extends around the circumference of the transition portion.

6. The export channel according to claim 5, wherein, The chamfer feature is truncated conical.

7. The export channel according to claim 4, wherein, The angle is between 20° and 30°.

8. The export channel according to claim 4, wherein, The first diameter is approximately 1.5 to approximately 2 times the second diameter.

9. A monument-like block having an internal passage disposed therein, comprising: The first part of the internal pathway; The second part of the internal pathway; A transition section is disposed between the first section and the second section, and the transition section is in fluid communication with the first section and the second section; The first part has a first diameter, and the second part has a second diameter, wherein the first diameter is approximately 1 to approximately 3 times the second diameter.

10. The monument-shaped block according to claim 9, wherein, The transition portion includes a chamfered feature, which is set at an angle between approximately 20 degrees and approximately 35 degrees to the outer wall of the second portion.

11. The monument-shaped block according to claim 10, wherein, The length of the transition portion is approximately one to approximately three times the second diameter.

12. The monument-shaped block according to claim 11, wherein, The monument-like block is a single, integral unit.

13. The monumental block of claim 12, further comprising a gasket that at least partially surrounds the internal passageway.

14. The monument-shaped block according to claim 13, wherein, The chamfered feature extends around the circumference of the transition portion.

15. The monument-shaped block according to claim 14, wherein, The chamfer feature is truncated conical.

16. The monument-shaped block according to claim 15, wherein, The angle is between 20° and 30°.

17. The monument-shaped block according to claim 16, wherein, The first diameter is about 1.5 to about 2 times the second diameter.

18. A method comprising: Drill the first part of the internal passageway within the overall monumental block; Drilling the transition portion of the internal passage in the integral monument-shaped block, wherein the drilling is performed at an angle to the axial center of the transition portion in order to form a chamfer feature; A second portion of an internal passage is drilled within the monolithic block. The second portion is in fluid communication with the transition portion and the first portion. The first portion has a first diameter, and the second portion has a second diameter. The first diameter is approximately 1 to approximately 3 times the second diameter.

19. The method according to claim 18, wherein, The angle is between approximately 20 degrees and approximately 35 degrees with respect to the outer wall of the second part.

20. The method according to claim 19, wherein, The length of the transition portion is approximately one to approximately three times the second diameter.

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