Overlapping susceptor and preheat ring

Abstract

The present disclosure relates to an overlapping pedestal and a pre-heat ring. Embodiments disclosed herein generally provide improved control of gas flow in a processing chamber. In at least one embodiment, a liner for a processing chamber includes an annular body having a sidewall, and a gas exhaust formed in the annular body for exhausting gas from an inner side to an outer side of the annular body. The gas exhaust includes one or more gas exhaust holes disposed through the sidewall. The liner further includes an opening in the annular body for substrate loading and unloading.

Description

[0001] This application is a divisional application of the invention patent application filed on March 23, 2022, with application number 202280007003.0 and invention title "Overlapping Base and Preheating Ring". background Technical Field

[0002] The embodiments of this disclosure generally relate to processing airflow in a chamber. More specifically, the embodiments disclosed herein involve overlapping bases and preheating rings, exhaust liner, and chamber pressure balancing. Background Technology

[0003] Semiconductor substrates are processed for a wide range of applications, including the fabrication of integrated devices and microdevices. One method of substrate processing involves depositing materials (such as dielectric materials or conductive metals) on the upper surface of the substrate. For example, epitaxy is a deposition process that grows a thin, ultrapure layer (typically a layer of silicon or germanium) on the surface of a substrate. Material can be deposited in a transverse flow chamber by causing process gases to flow parallel to the surface of the substrate positioned on a support and thermally decomposing the process gases to deposit material from the process gases onto the substrate surface. The quality of the epitaxially grown film depends on the precision of the gas flow during film deposition. For example, a purge gas flow within the lower portion of the chamber can help prevent or reduce the flow of process gases or diffusion of process gases into the lower portion. However, gas exchange between the process gas flow and the purge gas flow can be detrimental to the deposition process.

[0004] Therefore, there is a need for improved control of airflow in the processing chamber. Summary of the Invention

[0005] The embodiments of this disclosure generally relate to processing airflow in a chamber. More specifically, the embodiments disclosed herein involve overlapping bases and preheating rings, exhaust liner, and chamber pressure balancing.

[0006] In at least one embodiment, a liner for a processing chamber includes: an annular body having sidewalls; and an exhaust member formed in the annular body for discharging gas from the inside to the outside of the annular body. The exhaust member includes one or more exhaust holes disposed through the sidewalls. The liner further includes openings in the annular body for substrate loading and unloading.

[0007] In at least one embodiment, an assembly for a processing chamber includes: a base having a substrate receiving top surface; a liner having a first volume radially outwardly surrounding a plane below the base; and a preheating ring coupled to the liner and extending radially inwardly from the liner and radially overlapping the base.

[0008] In at least one embodiment, a processing chamber includes: a chamber body having a base and a preheating ring disposed within the chamber body. The chamber body includes: an upper chamber volume defined above a plane of the base; and a lower chamber volume defined below a plane of the base. The base and the preheating ring partially overlap radially. The processing chamber includes: a first discharge port disposed through a sidewall of the chamber body for discharging process gas from the upper chamber volume. The processing chamber includes: a second discharge port disposed through a sidewall of the chamber body for discharging purge gas from the lower chamber volume. The processing chamber includes: a differential pressure sensor configured to measure the pressure difference between the upper and lower chamber volumes. The processing chamber includes: a pressure balancing valve configured to fluidly couple the first and second discharge ports to a vacuum source. The pressure balancing valve is operable to regulate the pressure difference between the upper and lower chamber volumes. Attached Figure Description

[0009] To gain a more detailed understanding of the features described above in this disclosure, a more specific description of the disclosure, which has been briefly summarized above, can be obtained by referring to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate exemplary embodiments only and should not be construed as limiting the scope of this disclosure, and other equivalent embodiments are permissible.

[0010] Figure 1A This is a schematic cross-sectional view of a processing chamber according to at least one embodiment.

[0011] Figure 1B yes Figure 1A A magnified cross-sectional view of a portion of the image.

[0012] Figure 2A It is a separate top isometric view of the underliner according to at least one embodiment.

[0013] Figure 2B yes Figure 2A Side view of the lower liner.

[0014] Figure 3 It can be used Figure 1A Enlarged cross-sectional view of different base and preheating ring combinations in the processing chamber.

[0015] For ease of understanding, the same reference numerals are used to denote common elements in the figures where possible. Elements and features of one embodiment are intended to be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0016] The embodiments of this disclosure generally relate to processing airflow in a chamber. More specifically, the embodiments disclosed herein involve overlapping bases and preheating rings, exhaust liner, and chamber pressure balancing.

[0017] The embodiments disclosed herein provide improved control of airflow in a processing chamber, particularly a processing chamber having a process airflow in the upper portion and a purge airflow in the lower portion. Compared to conventional apparatuses where a gap between the base and the preheating ring allows for gas exchange between the base and the preheating ring, the embodiments disclosed herein provide an overlapping base and preheating ring, which reduces or prevents gas exchange between the process airflow in the upper portion and the purge airflow in the lower portion.

[0018] The embodiments disclosed herein reduce or prevent purge gas flow into the upper portion of the chamber, which helps prevent dilution of the process gas flow that can be detrimental to the deposition process. Some deposition processes use low-flow-rate main carrier gas to maintain high precursor partial pressures to achieve, for example, high dopant levels during film formation. During such processes, high purge gas flow rates heading to the upper portion dilute the process gas flow, which may force a reduction in the main carrier gas flow rate. Reducing the main carrier gas flow rate to undesirably low levels can lead to poor deposition uniformity, including poor deposition uniformity adjusted with rotation. Additionally, the purge gas flow introduces particles (e.g., metal particles) into the upper portion, adversely affecting defect performance.

[0019] The embodiments disclosed herein reduce or prevent process gas flow into the lower portion of the chamber, which helps prevent undesirable material deposition on the surfaces in the lower portion. For example, process gases can be prevented from contacting one or both of the back side of the substrate or the lower window and from forming film deposition on one or both of the back side of the substrate or the lower window, either of which can lead to process drift, resulting in undesirable changes in film thickness, dopant levels, and defect formation. Preventing material deposition in the lower portion of the chamber increases tool uptime by extending the preventative maintenance intervals associated with cleaning.

[0020] The embodiments disclosed herein provide an exhaust liner that allows for the direct discharge of purge gas from the lower portion of the chamber, unlike conventional liners where the purge gas is mixed with process gas and discharged from the upper portion of the chamber without exhaust. According to this mechanism, direct discharge of the purge gas from the lower portion of the chamber improves deposition process uniformity and tool uptime.

[0021] Compared to conventional processing chambers, where pressure is passively controlled at least in part based on process gas flow input, purge gas flow input, and the clearance size between the base and the preheating ring, the embodiments disclosed herein provide dynamic pressure balance between the upper and lower portions of the chamber. Based on this mechanism, dynamic pressure balance improves deposition process uniformity and tool uptime.

[0022] Figure 1AThis is a schematic cross-sectional view of the processing chamber 100. The processing chamber 100 can be used to process one or more substrates 101, including depositing material on the upper surface of the substrate 101. For example, the processing chamber 100 can be adapted to perform an epitaxial deposition process. In one example, the processing chamber 100 can be configured to process a 300 mm substrate.

[0023] Processing chamber 100 typically includes a chamber body 102, a support system 104, and a controller 106. Support system 104 may include components for monitoring and / or performing one or more processes (such as film deposition) performed using processing chamber 100. Controller 106 (such as a programmable computer) is coupled to and adapted to control processing chamber 100 and support system 104. Controller 106 includes a programmable central processing unit (CPU) 107, which operates in conjunction with memory 111 (e.g., non-volatile memory) and support circuitry 113. Support circuitry 113 is conventionally coupled to CPU 107 and includes caches, clock circuitry, input / output subsystems, power supplies, and similar components coupled to processing chamber 100, and combinations thereof.

[0024] In some implementations, CPU 107 is one of any form of general-purpose computer processor used in an industrial environment, such as a programmable logic controller (PLC) for controlling various monitoring system components and subprocessors. The memory 111 coupled to CPU 107 is non-transitory and is typically one or more of readily available local or remote memory (such as random access memory (RAM), read-only memory (ROM), floppy disk drive, hard disk, or any other form of digital storage).

[0025] In this document, memory 111 is in the form of a computer-readable storage medium (e.g., non-volatile memory) containing instructions that, when executed by CPU 107, facilitate the processing of operations of chamber 100. The instructions in memory 111 are in the form of a program product, such as a program (e.g., middleware application, device software application, etc.) that implements the methods of this disclosure. The program code may conform to any of a variety of different programming languages. In one example, this disclosure may be implemented as a program product stored on a computer-readable storage medium for use by a computer system. The program(s) of the program product define the functionality of the implementation (including the methods described herein).

[0026] Illustrative computer-readable storage media include, but are not limited to: (i) non-writable storage media (e.g., read-only memory devices within a computer, such as CD-ROM discs readable by a CD-ROM drive, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory), on which information can be permanently stored; and (ii) writable storage media (e.g., floppy disks or hard disk drives within floppy disk drives, or any type of solid-state random access semiconductor memory), on which information can be modified. Such computer-readable storage media are embodiments of this disclosure when carrying computer-readable instructions that direct the function of the methods described herein.

[0027] The chamber body 102 has an upper window 108 (e.g., an arched structure), sidewalls 109, and a lower window 110 (e.g., an arched structure) defining a processing area. A base 112 for supporting a substrate 101 is disposed in the processing area. The base 112 may be formed of silicon carbide or graphite coated with silicon carbide. The base 112 has a substrate receiving top surface 114. The base 112 is rotatably supported by support columns 116, which are coupled to corresponding support arms 118 extending from a shaft 120. During operation, the substrate 101 disposed on the base 112 can be raised relative to the base 112 by a substrate lifting arm 122 via a lifting pin 124.

[0028] The internal volume of the processing chamber 100 is divided into an upper chamber volume 134 (e.g., process gas region) above the plane of the base 112 and a lower chamber volume 136 (e.g., clean gas region) below the plane of the base 112.

[0029] Processing chamber 100 includes an array of radiant heating lamps 126 for heating (among other components) the back side 115 of base 112 and a preheating ring 132 (described in more detail below). Heating of base 112 and preheating ring 132 facilitates the thermal decomposition of process gases onto substrate 101 to form one or more layers on substrate 101. Radiant heating lamps 126 may be positioned above upper window 108, below lower window 110, or both, as... Figure 1A As shown in the figure. The upper window 108 and the lower window 110 may be formed of an optically transparent material (such as quartz) to facilitate the transmission of thermal radiation through the upper window 108 and the lower window 110.

[0030] The radiant heating lamps 126 can be arranged in any desired manner around the base 112 to independently control the temperature at various regions of the substrate 101 in order to facilitate material deposition onto the upper surface of the substrate 101. Although not discussed in detail herein, the deposited material may include silicon germanium, gallium arsenide, gallium nitride, or aluminum gallium nitride, etc. The heat output of each of the radiant heating lamps 126 can be precisely controlled using the controller 106. The radiant heating lamps 126 can be configured to heat the interior of the processing chamber 100 to a temperature ranging from about 200°C to about 1600°C.

[0031] The reflector may optionally be positioned above the upper window 108 to reflect infrared light radiated from the substrate 101 back onto the substrate 101. The reflector may be made of a metal such as aluminum or stainless steel. The efficiency of reflection may be improved by covering the reflector area with a highly reflective coating such as gold. The reflector may be coupled to a cooling source for supplying a cooling fluid (such as water) to the reflector to cool it.

[0032] An upper liner 128 is disposed below the upper window 108 and configured to prevent unwanted deposits on chamber components such as the sidewall 109 or the peripheral portion of the upper window 108. The upper liner 128 is positioned adjacent to the lower liner 130. The lower liner 130 is configured to fit within the inner circumference of the sidewall 109. The lower liner 130 is disposed between the upper window 108 and the lower window 110. The lower liner 130 radially outwards surrounds the lower chamber volume 136. Both the upper liner 128 and the lower liner 130 may be formed of quartz.

[0033] The preheating ring 132 is coupled to the lower liner 130 for supporting and positioning the preheating ring 132. The upper end 129 of the lower liner 130 has a profile for receiving the preheating ring 132 on the lower liner 130. The preheating ring 132 is configured such that when the base 112 is in a position as... Figure 1A The processing position shown is positioned around the periphery of the base 112. A preheating ring 132 extends radially inward from the lower liner 130. The radial overlap between the preheating ring 132 and the base 112 is configured to reduce or prevent gas exchange between the upper chamber volume 134 and the lower chamber volume 136, as described in more detail below. The preheating ring 132 may be formed of silicon carbide. The temperature of the preheating ring 132 during operation can range from about 100°C to about 800°C. The heated preheating ring 132 helps to activate the process gas flowing through the upper chamber volume 134.

[0034] Process gas supplied from process gas supply source 138 is introduced into upper chamber volume 134 through process gas inlet 140, which is formed through sidewall 109. Process gas inlet 140 extends at least partially between upper liner 128 and lower liner 130. Process gas inlet 140 is configured to guide the process gas in a generally radially inward direction as indicated by process gas flow 170. During membrane formation, base 112 may be located in a processing position (e.g., Figure 1A As shown, the processing position is adjacent to the end of the process gas inlet 140 and at approximately the same height as the end of the process gas inlet 140. This allows the process gas to flow in a generally planar laminar state along a flow path defined at least partially across the upper surface of the substrate 101. Although only one process gas inlet 140 is shown, the process gas inlet 140 may include two or more inlets for delivering two or more individual process gas flows with different compositions, concentrations, partial pressures, densities, and / or velocities.

[0035] Process gas exits the upper chamber volume 134 through an exhaust port (such as process gas outlet 142), which is formed through the side wall 109 of the processing chamber 102 opposite to the process gas inlet 140. The exhaust of process gas through process gas outlet 142 is facilitated by a vacuum source (such as vacuum pump 144), which is fluidly coupled to the downstream side of process gas outlet 142.

[0036] Purifying gas is supplied to the lower chamber volume 136 from one or more purifying gas sources 148a and / or 148b. Purifying gas sources 148a and 148b can be the same source or different sources, as shown. The purifying gas can be an inert gas, such as hydrogen or nitrogen. The purifying gas flow in the lower chamber volume 136 helps prevent or reduce the flow or diffusion of process gas from the upper chamber volume 134 into the lower chamber volume 136. The purifying gas flow enters the lower chamber volume 136 through one or both of a side inlet 150 (formed in or around the side wall 109) or a bottom inlet 160 (formed in the lower window 110). The side inlet 150 is located at a height below the process gas inlet 140. A distribution channel 152 is formed radially between the lower liner 130 and the side wall 109 and vertically between the side wall 109 and the lower window 110. Distribution channel 152 is fluidly coupled to side inlet 150 for receiving purge gas from side inlet 150. Distribution channel 152 extends 360° around lower liner 130 for uniformly distributing purge gas around lower chamber volume 136. Distribution channel 152 is fluidly coupled to lower chamber volume 136 via second channel 154. The second channel 154 shown is formed between lower liner 130 and lower window 110. The second channel 154 extends radially inward toward the lower end 131 of lower liner 130. Alternatively, the second channel 154 may be formed through the body of lower liner 130. The second channel 154 may be formed as a single annular channel or multiple arcuate channels. The second channel 154 is located at a height below process gas inlet 140. The second channel 154 shown is also located at a height below distribution channel 152. Alternatively, the second channel 154 may be located at or above distribution channel 152. The second channel 154 is configured to guide the purified gas into the lower chamber volume 136 in a generally radially inward direction, as indicated by the purified airflow 172.

[0037] The upper chamber volume 134 is vertically defined above the plane of the base 112 (e.g., above the substrate receiving surface 114 of the base 112 or above the substrate 101 disposed on the base 112) and the preheating ring 132, vertically defined below the upper window 108, and defined radially inward of the sidewall 109. The lower chamber volume 136 is vertically defined below the plane of the base 112 (e.g., below the back side 115 of the base 112), vertically defined above the lower window 110, and defined radially inward of the lower liner 130.

[0038] In the substrate loading position, the base 112 is lowered relative to the preheating ring 132 to provide a vertical gap between the radially overlapping portions of the base 112 and the preheating ring 132. The substrate 101 is configured to pass through the gap and through a corresponding opening in the lower liner 130 (e.g., Figure 2A(As shown) Loaded into and unloaded from chamber body 102. At processing location (e.g. Figure 1A As shown in the diagram, the base 112 is raised such that the base 112 and the preheating ring 132 are positioned at a height between the end of the process gas inlet 140 and the end of the second channel 154.

[0039] A bottom inlet 160 is located between shaft 120 and lower window 110. The bottom inlet 160 is directly fluid-coupled to the lower chamber volume 136. The bottom inlet 160 is located at a height below the second channel 154. The bottom inlet 160 is configured to guide the purified gas into the lower chamber volume 136 in a generally upward and radially outward direction, as indicated by purified airflow 174. The purified airflow 174 from the bottom inlet 160 can be configured to increase the flow rate of purified gas to the bottom portion of the lower chamber volume 136 compared to a separate purified airflow 172.

[0040] Purified gas exits the lower chamber volume 136 through a discharge port, such as a purified gas outlet 156 formed through sidewall 109. The purified gas outlet 156 shown is located opposite the process gas inlet 140. However, the purified gas outlet 156 may be located at any radial position along sidewall 109 relative to the process gas inlet 140. The lower liner 130 has an exhaust 133 (described in more detail below) for discharging the purified gas directly from the lower chamber volume 136 and into the purified gas outlet 156. Discharge of the purified gas through the exhaust 133 and the purified gas outlet 156 is facilitated by a vacuum source (such as a vacuum pump 144) fluidly coupled downstream of the purified gas outlet 156.

[0041] Differential pressure sensor 162 is configured to measure the pressure difference between the upper chamber volume 134 and the lower chamber volume 136. Differential pressure sensor 162 is coupled to each of the process gas outlet 142 and the purge gas outlet 156. The differential pressure sensor 162 shown is disposed in the sidewall 109. Alternatively, differential pressure sensor 162 may be located outside and near the chamber body 102, such as coupled to the sidewall 109. Measurement data from differential pressure sensor 162 is transmitted to one or both of controller 106 and pressure balancing valve 166, which will be described in more detail below.

[0042] Pressure sensor 164 is configured to measure the pressure in the upper chamber volume 134. During processing, the pressure in the upper chamber volume 134 can be from about 5 Torr to about 600 Torr. The illustrated pressure sensor 164 is located on and near the outside of the chamber body 102 and is coupled to the sidewall 109. Alternatively, pressure sensor 164 may be disposed within the sidewall 109. The illustrated pressure sensor 164 is coupled to the upper chamber volume 134 via the sidewall 109 and the upper gasket 128. Alternatively, pressure sensor 164 may be coupled to the upper chamber volume 134 via the upper window 108 or between the upper window 108 and the sidewall 109. Measurement data from pressure sensor 164 is transmitted to one or both of controller 106 and pressure balancing valve 166. A second pressure sensor may be configured to measure the pressure in the lower chamber volume 136. Measurement data from the second pressure sensor may be transmitted to one or both of controller 106 and pressure balancing valve 166.

[0043] Pressure balancing valve 166 fluidly couples each of process gas outlet 142 and purge gas outlet 156 to vacuum pump 144. Pressure balancing valve 166 can be operated by controller 106 based on data from one or both of differential pressure sensor 162 and pressure sensor 164. In operation, pressure balancing valve 166 regulates the discharge of process gas through process gas outlet 142 and purge gas through purge gas outlet 156 to regulate the pressure difference between upper chamber volume 134 and lower chamber volume 136. Pressure balancing between upper chamber volume 134 and lower chamber volume 136 eliminates the driving force for gas exchange between them. The process design tolerance for the pressure difference can be about ±5% or less, such as about ±0.1% to about ±5%, or about ±2% to about ±5%. In one example, for a pressure of 10 Torr in the upper chamber volume 134, the lower chamber volume 136 can be maintained in the range of about 9.9 Torr to about 10.1 Torr (i.e., ±1% tolerance). In one example, the pressure balancing valve 166 is operable to maintain the pressure difference between the upper chamber volume 134 and the lower chamber volume 136 at about 10% or less, such as about 5% or less, such as about 1% or less.

[0044] The pressure balancing valve 166 can be used to bias the pressure differential toward either the upper chamber volume 134 or the lower chamber volume 136. In one example, the pressure balancing valve 166 can be operated to maintain the lower chamber volume 136 at a higher pressure than the upper chamber volume 134. Alternatively, the pressure balancing valve 166 can be operated to maintain the lower chamber volume 136 at a lower pressure than the upper chamber volume 134.

[0045] Figure 1B yes Figure 1AA partially enlarged cross-sectional view. The base 112 has a raised border 180 radially outwardly surrounding a substrate receiving top surface 114 of the base 112. The raised border 180 has a top surface 181 facing the upper chamber volume 134. The base 112 has a radially outwardly extending outer flange 182 configured to overlap a corresponding overlapping portion of the preheating ring 132, as described in more detail below. The outer flange 182 extends radially outwardly relative to the raised border 180. The top surface 183 of the outer flange 182 is recessed below the top surface 181 of the raised border 180.

[0046] The body 184 of the preheating ring 132 (e.g., an annular body) has a top surface 185 facing the upper chamber volume 134. The top surface 185 of the preheating ring 132 is coplanar with the top surface 181 of the base 112. The body 184 of the preheating ring 132 has a radially inwardly extending inner flange 186 configured to overlap with the outer flange 182 of the base 112. The lower surface 187 of the inner flange 186 is recessed above the lower surface 188 of the body 184. The inner flange 186 of the preheating ring 132 is disposed above the outer flange 182 of the base 112 to allow the base 112 to be lowered relative to the preheating ring 132 for substrate loading and unloading. Figure 1B As shown, the inner flange 186 of the preheating ring 132 and the outer flange 182 of the base 112 are spaced apart from each other (e.g., not in contact). In the shown processing position, the vertical gap 189 between the top surface 183 of the outer flange 182 of the base 112 and the lower surface 187 of the inner flange 186 of the preheating ring 132 is about 1 mm or less, such as about 0.5 mm to about 1 mm, such as about 0.6 mm to about 0.8 mm, such as about 0.6 mm. The body 184 of the preheating ring 132 has an outer flange 190 extending below the lower surface 188. The outer flange 190 is configured to contact the lower liner 130 and surround a raised portion of the lower liner 130, as described in more detail below.

[0047] The lower liner 130 has a top surface 191 at its upper end 129 facing the upper chamber volume 134. The top surface 191 is coplanar with the top surface 185 of the preheating ring 132 and the top surface 181 of the base 112. The lower liner 130 has a radially inwardly extending inner flange 192, which has an upper surface 193 configured to support the preheating ring 132 via an outer flange 190. The inner flange 192 has a protrusion 194 configured to radially fit within the outer flange 190 of the preheating ring 132 and to help hold the preheating ring 132 on and centered on the lower liner 130.

[0048] Figure 2A yes Figure 1A A separate top-view isometric view of the lower liner 130. Figure 2B yes Figure 2A A side view of the lower liner 130. Therefore, for clarity, Figure 2A and Figure 2B Described together herein. The lower liner 130 typically includes an annular body 202 having a first end (or upper end) 129 and an opposing second end (or lower end) 131 (as described herein). Figure 2B (As shown in the diagram). When the lower liner 130 is disposed in the processing chamber 100, the first end 129 is disposed in the upper chamber volume 134, and the second end 131 is disposed in the lower chamber volume 136, as shown in the diagram. Figure 1A As shown in the image.

[0049] An exhaust element 133 is formed in the body 202 of the lower liner 130. The exhaust element 133 includes one or more exhaust holes 212 disposed through the lower liner 130. As shown, the one or more exhaust holes 212 are circular. In some other examples, the one or more exhaust holes may be non-circular (e.g., rounded, polygonal, elongated slots extending longitudinally relative to the lower liner in the circumferential or longitudinal direction, any other suitable shape, or a combination of the foregoing). In some examples, the same lower liner may include combinations of different exhaust holes (e.g., a combination of circular holes and elongated slots). The one or more exhaust holes 212 shown extend radially through the sidewall 208 of the lower liner 130. Alternatively, the one or more exhaust holes 212 may extend laterally through the sidewall 208 and may be parallel to each other. The lower liner 130 shown has 14 exhaust holes. However, the lower liner 130 may have any suitable number of exhaust holes required to discharge purge gases from the lower chamber volume 136. One or more vent holes 212 are circumferentially aligned around the sidewall 208 of the gasket 130. In one example, at least a pair of vent holes 212 are circumferentially aligned. One or more vent holes 212 are disposed within an arcuate portion of the lower gasket 130. For example, one or more vent holes 212 may be disposed within a radial angle 214 of the gasket 130. The radial angle 214 may be about 90° or less, such as about 45° or less, such as about 30° to about 60°, such as about 45°.

[0050] The lower liner 130 shown has eight protrusions 194 arranged circumferentially around the lower liner 130 at equal intervals. However, the lower liner 130 may have any suitable number of protrusions 194 as needed to help hold the preheating ring 132 on the lower liner 130 and center it, such as... Figure 1B As shown in the image.

[0051] The lower liner 130 includes a plurality of tabs 218 circumferentially disposed around the outer surface 224 of the lower liner 130. The plurality of tabs 218 are configured to rest on the lower window 110 to provide a vertical gap between the lower window 110 and the tapered portion 226 of the lower liner 130 for fluid coupling of the dispensing channel 152 to the second channel 154, such as... Figure 1A As shown in the image.

[0052] The lower liner 130 has an opening 220 in the sidewall 208 for substrate loading and unloading. The lower liner 130 has a plurality of recesses 222 configured to form at least a portion of the process gas inlet 140 (e.g., Figure 1A (As shown in the diagram). A plurality of recesses 222 are formed in the first end 129 and the outer surface 224. The plurality of recesses 222 are fluidly coupled to each other. The plurality of recesses 222 are disposed circumferentially opposite to the exhaust member 133.

[0053] Figure 3 It can be used Figure 1A Enlarged cross-sectional view of different base and preheating ring combinations in the processing chamber 100. Except for the overlapping portions, the base 312 and preheating ring 332 are... Figure 1B Similar to what is shown. Therefore, from Figure 1B The structure and corresponding markers of the non-overlapping parts were preserved. (and) Figure 1B In comparison, the outer flange 382 of the base 312 and the inner flange 386 of the preheating ring 332, besides being as follows: Figure 1B The diagram shows overlap not only in the vertical direction but also in the radial direction.

[0054] exist Figure 3 In this embodiment, the outer flange 382 of the base 312 has a first upper surface 383a and a second upper surface 383b extending above the height of the first upper surface 383a. The first and second upper surfaces 383a and 383b shown are parallel to the plane of the base 312. However, in some other examples, the first and second upper surfaces 383a and 383b may be positioned at an acute or obtuse angle relative to the plane of the base. An inner surface 383c connects the first and second upper surfaces 383a and 383b. The inner surface 383c shown is perpendicular to the plane of the base 312. However, in some other examples, the inner surface 383c may be positioned at an acute or obtuse angle relative to the plane of the base 312.

[0055] Also in Figure 3In the preheating ring 332, the radially inwardly extending inner flange 386 has a first lower surface 387a and a second lower surface 387b extending below the height of the first lower surface 387a. The first lower surface 387a and the second lower surface 387b shown are parallel to the plane of the preheating ring 332. However, in some other examples, the first lower surface 387a and the second lower surface 387b may be positioned at an acute or obtuse angle relative to the plane of the preheating ring 332. An outer surface 387c connects the first lower surface 387a and the second lower surface 387b. The outer surface 387c shown is perpendicular to the plane of the preheating ring 332. However, in some other examples, the outer surface 387c may be positioned at an acute or obtuse angle relative to the plane of the preheating ring 332. As shown, the profile of the inner flange 386 is shaped to conform to the profile of the outer flange 382, ​​such that... Figure 1B Compared to the example shown, this creates a path that further obstructs gas flow. In some examples, Figure 3 The gas flow path in the process can be referred to as a "zigzag path". In some examples, additional overlapping surfaces may be included in the overlapping portion of the base 312 and the preheating ring 332, following the same pattern or different patterns.

[0056] Similar to Figure 1B The first upper surface 383a and the first lower surface 387a overlap in the vertical direction, thereby forming a first vertical gap 389a between the first upper surface 383a and the first lower surface 387a. The size of the first vertical gap 389a can be... Figure 1B The vertical gap in the middle is similar to 189. Figure 3 In this configuration, additional vertical and radial gaps are formed to obstruct airflow. For example, the second upper surface 383b and the first lower surface 387a overlap in the vertical direction, thereby forming a second vertical gap 389b between the second upper surface 383b and the first lower surface 387a. Additionally, the second lower surface 387b and the first upper surface 383a overlap in the vertical direction, thereby forming a third vertical gap 389c between the second lower surface 387b and the first upper surface 383a. In this example, the second vertical gap 389b and the third vertical gap 389c shown are each smaller than the first vertical gap 389a. However, in some other examples, the second vertical gap 389b and the third vertical gap 389c may be the same size as or larger than the first vertical gap 389a. In this example, the second vertical gap 389b and the third vertical gap 389c shown have the same size. However, in some other examples, the second vertical gap 389b and the third vertical gap 389c may be different sizes. Furthermore, the inner surface 383c and the outer surface 387c overlap in the radial direction. In some examples, the size of the radial gap formed between the inner surface 383c and the outer surface 387c can be larger than [the specified value]. Figure 1BA vertical gap 189 is provided to prevent contact between opposing surfaces. Advantageously, with Figure 1B Compared to the combinations shown, Figure 3 The base and preheating ring combination shown further impedes gas flow between the chamber volumes above and below the plane of the base, while still allowing the base to be lowered relative to the preheating ring for substrate loading and unloading.

[0057] Although the foregoing relates to embodiments of the invention, other and further embodiments of the invention may be designed without departing from the basic scope of the invention, and the scope of the invention is defined by the appended claims.

Claims

1. A processing chamber, comprising: The chamber body comprises: Base; The volume of the first chamber is defined above the plane of the base; and The volume of the second chamber is defined below the plane of the base; The first discharge port is disposed through the side wall of the main body of the chamber and is in fluid communication with the volume of the first chamber; The second discharge port is disposed through the side wall of the main body of the chamber and is in fluid communication with the volume of the second chamber; A differential pressure sensor is configured to measure the pressure difference between the first chamber volume and the second chamber volume; and A pressure balancing valve is configured to fluidly couple a first discharge port and a second discharge port to a vacuum source, wherein the pressure balancing valve is operable to regulate the pressure difference between the first chamber volume and the second chamber volume.

2. The processing chamber of claim 1, wherein the differential pressure sensor is coupled to the first discharge port and the second discharge port.

3. The processing chamber of claim 1, wherein the pressure balancing valve is operable to maintain the pressure difference between the first chamber volume and the second chamber volume at about 10% or less.

4. The processing chamber of claim 1, wherein the pressure balancing valve is operable to maintain the second chamber volume at a pressure higher than that of the first chamber volume.

5. The processing chamber of claim 1, further comprising a liner disposed within the chamber body and surrounding the second chamber volume, wherein the liner includes an exhaust element for discharging purified gas directly from the second chamber volume to the second exhaust port.

6. The processing chamber of claim 1, wherein the chamber body further comprises: Preheating ring, wherein the base and the preheating ring partially overlap radially; and A liner is located radially outside the second chamber volume and surrounds the second chamber volume.

7. The processing chamber of claim 6, wherein the preheating ring is coupled to the liner and extends radially inward from the liner.

8. The processing chamber as claimed in claim 1, wherein: The first discharge port is configured to discharge process gas from the volume of the first chamber; and The second discharge port is configured to discharge process gas from the volume of the second chamber.

9. A processing chamber, comprising: The chamber body comprises: Base, the base having: The substrate receives the top surface; A raised boundary is radially outside the top surface of the substrate receiving and surrounds the top surface of the substrate receiving, the raised boundary having a top surface; and Outer flange; Preheating ring, wherein: The inner flange of the preheating ring radially overlaps with the outer flange of the base; and The lower surface of the inner flange of the preheating ring is vertically spaced from the top surface of the outer flange of the base; The upper chamber volume is defined above the plane of the base; and The lower chamber volume is defined below the plane of the base, wherein the base and the preheating ring partially overlap radially; The first discharge port is provided through the side wall of the main chamber body for discharging process gas from the upper chamber volume; A second discharge port is provided through the side wall of the main chamber body for discharging purified gas from the lower chamber volume; A differential pressure sensor is configured to measure the pressure difference between the upper chamber volume and the lower chamber volume; and A pressure balancing valve is configured to fluidly couple a first discharge port and a second discharge port to a vacuum source, wherein the pressure balancing valve is operable to regulate the pressure difference between the upper chamber volume and the lower chamber volume.

10. The processing chamber of claim 9, wherein the differential pressure sensor is coupled to the first discharge port and the second discharge port.

11. The processing chamber of claim 9, wherein the pressure balancing valve is operable to maintain the pressure difference between the upper chamber volume and the lower chamber volume at about 10% or less.

12. The processing chamber of claim 9, wherein the pressure balancing valve is operable to maintain the lower chamber volume at a pressure higher than the upper chamber volume.

13. The processing chamber of claim 9, further comprising a liner disposed in the chamber body and surrounding the lower chamber volume, wherein the liner includes an exhaust element for discharging purified gas directly from the lower chamber volume to the second exhaust port.

14. The processing chamber of claim 13, wherein the preheating ring is coupled to the liner and extends radially inward from the liner.

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