Charging device and single crystal furnace

Abstract

The application provides a feeding device and a single crystal furnace. The feeding device is used for feeding silicon particles to the single crystal furnace. The feeding device comprises a pipeline assembly and a feeding assembly. The pipeline assembly comprises a first part and a second part. The feeding assembly is arranged inside the pipeline assembly and connected to the pipeline assembly. The feeding assembly is used for driving the silicon particles inside the pipeline assembly to move along the extension direction of the pipeline assembly. One end of the pipeline assembly away from a silicon raw material bin is used for extending from the side of the single crystal furnace to the inside of the single crystal furnace and pointing to the liquid surface of the molten silicon. In the case that the pipeline assembly is connected to the single crystal furnace and feeds the silicon particles to the single crystal furnace, the first part is connected to the second part, and one end of the second part away from the first part points to the liquid surface. According to the feeding device, the silicon material can be added to the single crystal furnace without the single crystal furnace auxiliary chamber and without changing the thermal field structure. The free fall distance of the silicon particles is short, the liquid splashing is reduced, and the stability of the subsequent single crystal silicon rod growth is improved.

Description

Technical Field

[0001] This application relates generally to the field of semiconductor manufacturing technology, and more specifically to a feeding device and a single crystal furnace. Background Technology

[0002] The Czochralski process (Cz process) for growing single-crystal silicon is a primary substrate material in semiconductor manufacturing. Its main processes include: placing polycrystalline silicon in a high-purity quartz crucible, introducing a single-crystal silicon hot zone, and heating the zone with a heater to melt the silicon. A seed crystal is then inserted into the melt, and after steps such as crystal pulling, shoulder formation, constant-diameter growth, finishing, and cooling, the grown single-crystal silicon rod is removed from the single-crystal furnace for further processing. Using a single quartz crucible to grow multiple single-crystal silicon rods significantly improves the efficiency of silicon, the quartz crucible, and the equipment.

[0003] In the process of continuously growing multiple single-crystal silicon rods in a single-crystal furnace, after the single-crystal silicon rods are grown, they need to be slowly cooled in the auxiliary chamber of the single-crystal furnace for several hours. At the same time, the quartz crucible and the remaining molten silicon inside it need to be kept at a high temperature. During this process, silicon material cannot be added to the quartz crucible through the auxiliary chamber. The standby process not only consumes a lot of electrical energy, but also increases the production cycle of the crystal rods and reduces the machine's capacity.

[0004] Therefore, there is a need to provide a feeding device and a single crystal furnace to at least partially solve the above problems. Summary of the Invention

[0005] The summary section introduces a series of simplified concepts, which will be further explained in detail in the detailed description section. This summary section is not intended to limit the key and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0006] To at least partially solve the above problems, a first aspect of this application provides a feeding device for feeding silicon particles into a single crystal furnace, the feeding device comprising: Piping assembly for receiving silicon particles from a silicon feedstock silo, the piping assembly comprising a first part and a second part; and A feeding assembly is disposed inside and connected to the pipeline assembly, and the feeding assembly is used to drive silicon particles inside the pipeline assembly to move along the extension direction of the pipeline assembly. One end of the pipeline assembly, away from the silicon raw material hopper, is used to extend from the side of the single crystal furnace into the interior of the single crystal furnace and point towards the liquid surface of the molten silicon inside the single crystal furnace. Wherein, when the pipeline assembly is connected to the single crystal furnace and the silicon particles are fed to the single crystal furnace, the first part is connected to the second part, the first part extends along a first horizontal direction, the extension direction of the second part is inclined or perpendicular to the first horizontal direction, and the end of the second part away from the first part points to the liquid surface.

[0007] Optionally, the piping assembly includes: A receiving pipe, the receiving pipe being used to receive silicon particles from a silicon raw material silo; and A feeding tube, detachably connected to the receiving tube, is used to receive silicon particles from the receiving tube and deliver them to the single crystal furnace; The feeding assembly is installed inside both the receiving pipe and the feeding pipe.

[0008] Optionally, when the piping assembly is connected to the single crystal furnace and supplies the silicon particles to the single crystal furnace, The receiving pipe is connected to the feeding pipe, and the receiving pipe extends along the first horizontal direction.

[0009] Optionally, the feeding tube includes: The receiving section, wherein the feeding assembly is disposed internally; and The feeding section is connected to the receiving section, and the extending direction of the feeding section is inclined or perpendicular to the extending direction of the receiving section. Wherein, when the pipeline assembly is connected to the single crystal furnace and the silicon particles are fed to the single crystal furnace, the receiving portion extends along the first horizontal direction, and the end of the feeding portion away from the receiving portion points towards the liquid surface.

[0010] Optionally, The feeding pipe further includes a transition section disposed between the receiving section and the feeding section, the transition section being connected to both the receiving section and the feeding section; and / or When the pipeline assembly is connected to the single crystal furnace and the silicon particles are fed into the single crystal furnace, the extension direction of the feeding portion is inclined relative to the extension direction of the receiving portion, and the end of the feeding portion away from the receiving portion points to the middle position of the liquid surface.

[0011] Optionally, The receiving portions of the receiving pipe and the feeding pipe form the first part of the piping assembly; and / or The second part of the pipeline assembly includes the feeding section of the feeding pipe.

[0012] Optionally, the piping assembly includes: A receiving pipe, the receiving pipe being used to receive silicon particles from a silicon raw material silo; and A feeding tube, detachably connected to the receiving tube, is used to receive silicon particles from the receiving tube and deliver them to the single crystal furnace; The receiving pipe is the first part, the feeding pipe is the second part, and the feeding assembly is disposed inside the first part.

[0013] Optionally, the feeding assembly is configured as a spiral feeding structure.

[0014] Optionally, the feeding device further includes a housing assembly. The piping assembly is disposed on the housing assembly, and the housing assembly is used to connect to the single crystal furnace.

[0015] Optionally, the housing assembly includes: A housing for accommodating the piping assembly, and a housing for connection to the single crystal furnace; and A spacer, the spacer being disposed inside the housing and connected to the housing, to divide the housing into a first region and a second region; The first region has a first communication port for communicating with the silicon raw material warehouse, and the second region has a second communication port for communicating with the single crystal furnace.

[0016] Optionally, the housing assembly further includes a first cover plate, which is correspondingly disposed with the first communication port. The first cover plate is closably connected to the housing to control the opening and closing of the first communication port; and / or The spacer is provided with a through hole connecting the first region and the second region. The housing assembly further includes a second cover plate, which is correspondingly disposed with respect to the through hole. The second cover plate is closably connected to the housing to control the opening and closing of the through hole; and / or The outer casing is provided with an observation port for the user to observe the first area.

[0017] Optionally, the piping assembly includes: A receiving pipe, the receiving pipe being used to receive silicon particles from a silicon raw material silo; and A feeding tube, detachably connected to the receiving tube, is used to receive silicon particles from the receiving tube and deliver them to the single crystal furnace; The piping assembly has a switchable storage state and an operating state. When the piping assembly is in the retracted state, the receiving pipe is separated from the feeding pipe; When the pipeline assembly is in the operating state, the receiving pipe is connected to the feeding pipe, the receiving pipe extends along the first horizontal direction, and the end of the feeding pipe away from the receiving pipe points towards the liquid surface.

[0018] Optionally, the housing assembly further includes a receiving tube storage compartment, which is connected to the outer shell and communicates with the first region. When the piping assembly is in the stored state, the receiving pipe storage compartment is used to accommodate the receiving pipe.

[0019] Optionally, the feeding tube includes: The receiving section, wherein the feeding assembly is disposed internally; and The feeding section is connected to the receiving section, and the extending direction of the feeding section is inclined or perpendicular to the extending direction of the receiving section. When the pipeline assembly is in the working state, the receiving portion extends along the first horizontal direction, and the end of the feeding portion away from the receiving portion points towards the liquid surface. Furthermore, when the piping assembly is in the retracted state, the first area is used to accommodate the feeding pipe.

[0020] Optionally, when the piping assembly is in the retracted state, the feeding pipe is in a first position; when the piping assembly is in the operating state, the feeding pipe is in a second position. The feeding device further includes a driving component connected to the feeding pipe to drive the feeding pipe to move between the first position and the second position.

[0021] A second aspect of this application provides a single crystal furnace, the single crystal furnace including the feeding device according to the first aspect of this application.

[0022] Optionally, the single crystal furnace includes: Furnace body; and A furnace cover, located above the furnace body; The feeding device is disposed between the furnace body and the furnace cover, and the feeding device abuts against the furnace body and the furnace cover; When the pipeline assembly delivers the silicon particles to the single crystal furnace, the first portion extends along the first horizontal direction, the extension direction of the second portion is inclined or perpendicular to the first horizontal direction, and the end of the second portion away from the first portion points to the liquid surface of the molten silicon in the single crystal furnace.

[0023] According to the feeding device of this application, silicon material can be added to the single crystal furnace without passing through the sub-chamber and without changing the thermal field structure, thus shortening standby time and increasing production capacity. The second part of the pipeline assembly points to the surface of the molten silicon. The silicon particles have a short free fall distance and low kinetic energy when they fall into the molten silicon surface, effectively reducing liquid splashing, minimizing contamination of the thermal field components and the melt itself, and improving the stability of subsequent single crystal silicon ingot growth. Attached Figure Description

[0024] The following drawings, illustrating embodiments of this application, are incorporated herein by reference and are used to understand this application. The drawings illustrate embodiments of this application and their descriptions, serving to explain the principles of this application. In the drawings, Figure 1 and Figure 2 This is a three-dimensional schematic diagram of a feeding device according to a preferred embodiment of the present application, wherein the piping assembly is in operation; Figure 3 and Figure 4 This is a three-dimensional schematic diagram of a feeding device according to a preferred embodiment of the present application, wherein the piping assembly is in a retracted state; and Figure 5 This is a cross-sectional view of a single crystal furnace according to a preferred embodiment of the present application, wherein a feeding device is connected to the single crystal furnace and is in operation, and a silicon raw material silo is provided on one side of the single crystal furnace.

[0025] Explanation of reference numerals in the attached figures: 100 feeding device 110 piping assembly 111 Part 1 112 Part Two 120 feeding assembly 121 swivel 122 spiral blades 123 receiving pipe 124 feed tube 125 receiving section 126 Feeding Section 127 Transition Section 128 protrusions 129 Slide 130 housing assembly 131 casing 132 spacer 133 First Area 134 Second Area 135 First Connecting Port 136 Second Connecting Port 137 through hole 138 material receiving pipe storage bin 139 First Cover Plate 140 Second Cover Plate 141 Observation Port 200 Single Crystal Furnace 210 furnace body 211 Furnace Lid 212 Deputy Room 213 single crystal silicon rod 214 lifting head 215 graphite support rod 216 Graphite Crucible 217 Quartz Crucible 218 graphite cover plate 219 Hot Screen 220 heater 221 Melt Silicon 230 Silicon Raw Material Warehouse 231 Feeding Bin D1 First horizontal direction DH up and down direction Detailed Implementation

[0026] In the following description, numerous specific details are set forth to provide a more thorough understanding of this application. However, it will be apparent to those skilled in the art that embodiments of this application may be practiced without one or more of these details. In other instances, certain technical features well-known in the art have not been described to avoid confusion with embodiments of this application.

[0027] To fully understand the embodiments of this application, a detailed structure will be presented in the following description. Obviously, the implementation of the embodiments of this application is not limited to the specific details familiar to those skilled in the art.

[0028] It should be understood that the terminology used herein is intended only to describe particular embodiments and is not intended to limit the scope of this application. The singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. When the terms “comprising” and / or “including” are used in this specification, they indicate the presence of the stated features, integrals, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or combinations thereof.

[0029] The ordinal numbers such as "first" and "second" used in this application are merely identifiers and have no other meaning, such as a specific order. Furthermore, for example, the term "first component" does not imply the existence of a "second component," and the term "second component" does not imply the existence of a "first component." It should be noted that the terms "upper," "lower," "front," "rear," "left," "right," "inner," "outer," and similar expressions used in this application are for illustrative purposes only and are not intended to be limiting.

[0030] The specific embodiments of this application will be described in more detail below with reference to the accompanying drawings, which illustrate representative embodiments of this application and are not intended to limit this application.

[0031] Following the section on "Background Technology," in existing technologies, a single crystal furnace uses a single quartz crucible to grow multiple single-crystal silicon rods, which can significantly improve the utilization efficiency of silicon material, the quartz crucible, and the equipment. However, after the single-crystal silicon growth is complete, its cooling process still needs to be carried out in the auxiliary chamber of the single crystal furnace, which usually takes several hours. During this period, it is necessary to maintain a high-temperature environment in the thermal field, resulting in unnecessary energy consumption and wasting the effective working time of the equipment.

[0032] Therefore, during the growth process of single-crystal silicon rods or between growth intervals, silicon particles are still added to the inside of the single-crystal furnace to reduce unnecessary energy consumption.

[0033] For example, by creating an opening in the furnace lid of the single crystal furnace, a feeding tube can be inserted through this opening for feeding. This feeding method results in a large silicon particle travel distance and significant splashing. Furthermore, the furnace lid of the single crystal furnace houses multiple devices such as a crystal-drawing camera, a diameter control camera, and an observation window, making space extremely limited and hindering the arrangement and operation of the feeding tube. Alternatively, the existing continuous Czochralski (CCz) method for feeding silicon particles involves introducing silicon particles downwards through the furnace lid, which also suffers from the aforementioned problems. Moreover, the feeding tube is constantly exposed to a high-temperature environment, which can easily cause surface damage, introducing quartz particles into the molten silicon and disrupting the growth of single crystal silicon. Alternatively, existing side-feeding single crystal furnaces add granular silicon (or silicon particles) through an opening in the furnace insulation layer, disrupting the symmetry of the thermal environment for single crystal silicon growth and hindering its development.

[0034] In other words, in existing technologies, structural modifications to single-crystal furnaces are costly and can damage the thermal field structure within the furnace. Splashing of silicon particles can also cause difficulties in subsequent single-crystal silicon rod growth.

[0035] Based on this, this application provides a feeding device.

[0036] Please see Figures 1 to 5The feeding device 100 is used to feed silicon particles into the single crystal furnace 200. The feeding device 100 includes a piping assembly 110 and a feeding assembly 120. The piping assembly 110 is used to receive silicon particles from the silicon raw material bin 230. The piping assembly 110 includes a first portion 111 and a second portion 112. The feeding assembly 120 is disposed inside the piping assembly 110 and connected to the piping assembly 110. The feeding assembly 120 is used to drive the silicon particles inside the piping assembly 110 to move along the extension direction of the piping assembly 110. The end of the piping assembly 110 away from the silicon raw material bin 230 is used to extend from the side of the single crystal furnace 200 into the interior of the single crystal furnace 200 and point towards the liquid surface of the molten silicon 221 inside the single crystal furnace 200.

[0037] In this configuration, when the piping assembly 110 is connected to the single crystal furnace 200 and supplies silicon particles to the single crystal furnace 200, a first portion 111 is connected to a second portion 112. The first portion 111 extends along a first horizontal direction D1, and the extension direction of the second portion 112 is inclined or perpendicular to the first horizontal direction D1. The end of the second portion 112 furthest from the first portion 111 points towards the liquid surface of the molten silicon 221.

[0038] According to the feeding device 100 of this scheme, silicon material (i.e., silicon particles) can be added into the single crystal furnace 200 without passing through the auxiliary chamber 212 of the single crystal furnace 200 and without changing the thermal field structure, thus shortening the standby time and increasing the production capacity. The second part 112 of the pipeline assembly 110 points to the liquid surface of the molten silicon 221. The silicon particles have a short free fall distance and low kinetic energy when they fall into the liquid surface of the molten silicon 221, which effectively reduces liquid splashing, reduces contamination to the thermal field components and the melt itself, and improves the stability of subsequent single crystal silicon ingot growth.

[0039] Please see now Figure 1 , Figure 2 and Figure 5 The piping assembly 110 includes a receiving pipe 123 and a feeding pipe 124. The receiving pipe 123 is used to receive silicon particles from the silicon raw material silo 230. The feeding pipe 124 is detachably connected to the receiving pipe 123. The feeding pipe 124 is used to receive silicon particles from the receiving pipe 123 and deliver them to the single crystal furnace 200. Both the receiving pipe 123 and the feeding pipe 124 have a feeding assembly 120 inside.

[0040] Optionally, the feeding assembly 120 is configured as a screw feeder. For example, the feeding assembly 120 is configured as a screw feeder. Those skilled in the art will know that screw feeders are commonly referred to as "augers." Please refer to... Figure 2The feeding assembly 120 includes a rotating shaft 121 and helical blades 122. That is, the core structure of the screw feeder is a rotating shaft 121 with helical blades 121. This rotating shaft 121 is typically made of solid or hollow steel tubing. The helical blades 121 are welded to the rotating shaft 121. Power is provided by a drive device such as a motor and a reducer. When the motor drives the rotating shaft 121 to rotate, the material (i.e., silicon particles) is conveyed along the extension direction of the piping assembly 110, as if pushed by the rotating screw.

[0041] Furthermore, when the piping assembly 110 is connected to the single crystal furnace 200 and supplies silicon particles to the single crystal furnace 200, the receiving pipe 123 is connected to the feeding pipe 124 and extends along the first horizontal direction D1.

[0042] Please see Figure 4 More specifically, the feeding pipe 124 includes a receiving portion 125 and a feeding portion 126. A feeding assembly 120 is disposed inside the receiving portion 125. The feeding portion 126 is connected to the receiving portion 125. The extending direction of the feeding portion 126 is inclined or perpendicular to the extending direction of the receiving portion 125. It should be noted that when the piping assembly 110 is connected to the single crystal furnace 200 and silicon particles are fed to the single crystal furnace 200, the receiving portion 125 extends along a first horizontal direction D1, and the end of the feeding portion 126 furthest from the receiving portion 125 points towards the liquid surface of the molten silicon 221.

[0043] Optionally, when the pipeline assembly 110 is connected to the single crystal furnace 200 and supplies silicon particles to the single crystal furnace 200, the extension direction of the feeding portion 126 is inclined relative to the extension direction of the receiving portion 125, and the end of the feeding portion 126 away from the receiving portion 125 points to the middle position of the liquid surface of the molten silicon 221.

[0044] Please continue reading. Figure 4 The feeding tube 124 also includes a transition portion 127, which is disposed between the receiving portion 125 and the feeding portion 126. The transition portion 127 connects the receiving portion 125 and the feeding portion 126. Optionally, the receiving portion 125, the feeding portion 126, and the transition portion 127 are integrally formed. In other words, the transition portion 127 provides a smooth transition between the receiving portion 125 and the feeding portion 126, facilitating the flow of silicon particles.

[0045] Please see Figure 1 , Figure 2 and Figure 4The receiving portions 125 of the receiving pipe 123 and the feeding pipe 124 form the first part 111 of the piping assembly 110. The second part 112 of the piping assembly 110 includes the feeding portion 126 of the feeding pipe 124. It can be understood that the feeding assembly 120 is provided inside the receiving portions of both the receiving pipe 123 and the feeding pipe 124.

[0046] Alternatively, the receiving pipe is constructed as a first part 111, and the feeding pipe 124 is constructed as a second part 112. The feeding assembly 120 is disposed inside the first part 111 (i.e., the receiving pipe).

[0047] The following description uses the illustrated embodiments for further explanation.

[0048] Please see now Figures 1 to 5 The feeding device 100 also includes a housing assembly 130, and a piping assembly 110 is disposed on the housing assembly 130. The housing assembly 130 is used to connect to the single crystal furnace 200.

[0049] Specifically, the housing assembly 130 includes a housing 131 and a spacer 132. The housing 131 is used to house the piping assembly 110. The housing 131 is used to connect to the single crystal furnace 200. The spacer 132 is disposed inside the housing 131 and connected to the housing 131 to divide the housing 131 into a first region 133 and a second region 134. The first region 133 has a first communication port 135 for communicating with the silicon raw material hopper 230. The second region 134 has a second communication port 136 for communicating with the single crystal furnace 200.

[0050] Furthermore, the housing assembly 130 also includes a first cover plate 139, which is correspondingly disposed with the first communication port 135. The first cover plate 139 is closably connected to the housing 131 to control the opening and closing of the first communication port 135. For example Figure 1 and Figure 3 In this design, there are two first cover plates 139, and both first cover plates 139 can slide relative to the outer shell 131 to control the opening and closing of the first communication port 135. A driving component can be provided between the first cover plate 139 and the outer shell 131 to drive the first cover plate 139 to slide.

[0051] Please see Figure 2 , Figure 4 and Figure 5 The spacer 132 is provided with a through hole 137 connecting the first region 133 and the second region 134. The housing assembly 130 also includes a second cover plate 140, which is correspondingly disposed with respect to the through hole 137. The second cover plate 140 is closably connected to the outer housing 131 to control the opening and closing of the through hole 137. See reference. Figure 2It can be seen that there can be two second cover plates 140. The two second cover plates 140 are constructed in an arc shape to fit the shape of the second connecting port 136. A driving component can also be provided between the second cover plate 140 and the outer shell 131 to drive the second cover plate 140 to slide.

[0052] The outer casing 131 is provided with an observation port 141 for the user to observe the first region 133. For example, the observation port 141 is constructed as a transparent window.

[0053] The piping assembly 110 has a switchable storage state and an operating state.

[0054] Please see Figures 2 to 4 When the piping assembly 110 is in the retracted state, the receiving pipe 123 is separated from the feeding pipe 124. The housing assembly 130 also includes a receiving pipe storage compartment 138, which is connected to the housing 131 and communicates with the first region 133. When the piping assembly 110 is in the retracted state, the receiving pipe storage compartment 138 is used to accommodate the receiving pipe. Figure 2 and Figure 4 In the middle, the receiving pipe storage bin 138 is set along the first horizontal direction D1.

[0055] Please see Figure 1 , Figure 2 and Figure 5 When the piping assembly 110 is in the operating state, the receiving pipe 123 is connected to the feeding pipe 124, the receiving pipe 123 extends along the first horizontal direction D1, and the end of the feeding pipe 124 away from the receiving pipe 123 points towards the liquid surface of the molten silicon 221. In other words, when the piping assembly 110 is in the operating state, the receiving portion 125 extends along the first horizontal direction D1, and the end of the feeding portion 126 away from the receiving portion 125 points towards the liquid surface of the molten silicon 221. When the piping assembly 110 is in the retracted state, the first region 133 is used to accommodate the feeding pipe 124.

[0056] It is understandable that when the receiving pipe 123 is connected to the feeding pipe 124, the feeding component 120 at the receiving pipe 123 and the feeding component 120 at the feeding pipe 124 are connected to each other to ensure that the silicon particles flow in an orderly manner along the extension direction of the pipeline component 110.

[0057] In other words, the receiving pipe 123 and the feeding pipe 124 each have built-in spiral blades 122, which rotate under power to transport silicon particle raw materials to the bend (i.e., transition section 127) of the feeding pipe 124. The silicon particles slide down under gravity and fall into the molten silicon 221. In the non-feeding condition (i.e., the storage state), the receiving pipe 123 and its built-in spiral blades 122 are stored in the receiving pipe storage chamber 138, freeing up space for the feeding pipe 124 to be retracted into the first area 133. After the feeding pipe 124 is retracted, the rotating sealing door (i.e., the second cover plate 140) closes, isolating the first area 133 from the second area 134.

[0058] It should be noted that when the piping assembly 110 is in the retracted state, the feeding pipe 124 is in the first position (see...). Figure 4 With the piping assembly 110 in operation, the feed pipe 124 is in the second position (see...). Figure 2 The feeding device 100 also includes a driving member connected to the feeding pipe 124 to drive the feeding pipe 124 to move between a first position and a second position.

[0059] Please see Figure 2 and Figure 4 A groove 129 is provided in the first region 133 of the outer casing 131, and a protrusion 128 that mates with the groove 129 is provided in the feeding tube 124. It can be understood that the purpose of the drive is to drive the feeding tube 124 to move along the groove 129 when the second cover 140 is open, and then drive the feeding tube 124 to pivot, thereby moving the feeding tube 124 between a first position and a second position. Optionally, the drive can be constructed as a swing cylinder. Alternatively, the drive can be a combination of a servo motor and a reducer.

[0060] This application also provides a single crystal furnace.

[0061] Please see Figure 1 and Figure 5 The single crystal furnace 200 includes the aforementioned feeding device 100. Specifically, the single crystal furnace 200 includes a furnace body 210 and a furnace cover 211, with the furnace cover 211 located above the furnace body 200. The feeding device 100 is disposed between the furnace body 210 and the furnace cover 211, and the feeding device 100 abuts against the furnace body 210 and the furnace cover 211.

[0062] In the case where the pipeline assembly 110 is conveying silicon particles to the single crystal furnace 200, the first part 111 extends along the first horizontal direction D1, the extension direction of the second part 112 is inclined or perpendicular to the first horizontal direction D1, and the end of the second part 112 away from the first part 111 points to the liquid surface of the molten silicon 221 in the single crystal furnace 200.

[0063] Those skilled in the art will understand that in the single crystal furnace 200, the furnace body 210, the top furnace cover 211, and the upper auxiliary chamber 212 together form a sealed working chamber. In the core growth mechanism of the single crystal silicon rod 213, a graphite support rod 215 passes through the furnace body 210 and extends to the bottom of the furnace body 210. The lower end of the pull head 214 suspends the seed crystal to pull the single crystal silicon rod 213. The interior of the furnace body 210 is heated by a heater 220 to maintain the molten silicon 221 in the quartz crucible 217 in a liquid state, while the graphite crucible 216 nested outside the quartz crucible provides support and homogenization. The top graphite cover plate 218 and the surrounding heat shield 219 optimize the temperature gradient inside the furnace by reflecting and isolating radiant heat to ensure stable crystal growth.

[0064] The receiving pipe 123 is located below the silicon raw material silo 230. A feed chamber 231 is provided between the receiving pipe 123 and the silicon raw material silo 230, and the feed chamber 231 is connected to both. It is easy to understand that the receiving pipe 123 has a feed inlet communicating with the feed chamber 231. The feed chamber 231 is positioned along the vertical direction DH. The feed chamber 231 is constructed such that, along the vertical direction DH, the closer it is to the silicon raw material silo 230, the larger its inner wall size, to facilitate the entry of silicon particles into the receiving pipe 123.

[0065] It should be noted that the furnace cover 211 is easier to open and close than the furnace body 210, and the feeding device 100 is located between the furnace body 210 and the furnace cover 211. It can be seen that the functions of the feeding device 100 and the single crystal furnace 200 do not interfere with each other. In other words, the feeding device 100 and the single crystal furnace 200 are separate structures. When one of the feeding device 100 or the single crystal furnace 200 needs maintenance, it will not affect the basic function of the other. For example, if the feeding device 100 malfunctions and needs maintenance, it will not affect the basic function of the single crystal furnace 200. That is, when the feeding device 100 malfunctions and needs maintenance, the single crystal furnace 200 can still melt the polycrystalline silicon raw material (i.e., the silicon particles mentioned above) in a controllable high-temperature environment, and then stably pull out high-purity single crystal silicon rods 213 with a single crystal orientation and uniform diameter through seed crystal traction and thermal field control.

[0066] After the single-crystal silicon rod 213 is grown, it is slowly lifted into the sub-chamber 212 and begins to cool down. Due to the poor thermal conductivity of single-crystal silicon, the cooling process usually takes several hours. An excessively rapid cooling rate will generate large thermal stress within the crystal, thereby causing slip-type defects during semiconductor silicon wafer processing.

[0067] In this application, initially, both the first connecting port 135 and the second connecting port 137 are closed, and the feeding pipe 124 is placed horizontally in the first region 133. After the first region 133 is evacuated (below 0.03 torr), it is filled with argon gas, and the pressure is kept consistent with the inside of the single crystal furnace (usually 10~20 torr). At the same time, the silicon raw material hopper 230 is connected to the first connecting port 135 and is also evacuated and filled with argon gas, so that its pressure is consistent with that of the first region 133.

[0068] To prevent the feeding tube 124 from contacting the monocrystalline silicon rod 213, the second cover plate 140 opens when the tail of the monocrystalline silicon rod 213 is higher than the housing assembly 130. Afterwards, driven by the drive unit, the feeding tube 124 performs translational, rotational, and forward movements, pointing towards the surface of the molten silicon 221. The receiving tube 123 extends from the receiving tube storage chamber 138 and connects to the feeding tube 124. It is understood that the receiving tube 123 and the receiving tube storage chamber 138 can be equipped with a power unit to drive the extension and retraction of the receiving tube 123 relative to the receiving tube storage chamber 138.

[0069] Furthermore, the first cover plate 139 is opened, and silicon particles enter the receiving pipe 123 from the silicon raw material bin 230. Driven by the spiral blades 122, they move and eventually slide into the molten silicon 221. As the silicon particles are added, the graphite crucible 217 slowly descends. It should be noted that after the silicon particles in the silicon raw material bin 230 are added, the first cover plate 139 is closed. Another silicon raw material bin 230 is used, and after vacuuming and argon filling to pressure equilibrium, the first cover plate 139 is reopened to continue the feeding process. After the designed amount of silicon particles has been added to the quartz crucible 217, the first cover plate 139 is closed first, separating the silicon raw material bin 230. The receiving pipe 123 separates from the feeding pipe 124 and retracts into the receiving pipe receiving chamber 138. The feeding pipe 124 completely retracts into the first area 133 through rotation, translation, and retraction. Finally, the second cover plate 140 is closed, achieving complete isolation from the single crystal furnace chamber.

[0070] While the re-added silicon particles melt in the high-temperature environment generated by heater 220, the temperature of the single-crystal silicon rod 213 in the sub-chamber 212 of the single-crystal furnace 200 slowly decreases to within the standard range before being removed. Subsequently, the pull head 214 lowers after placing the seed crystal. The next round of single-crystal growth processes, including seed crystal welding, crystal pulling, shoulder formation, constant diameter growth, tailing, and cooling, begins. During the cooling process of the single-crystal silicon rod 213 in the sub-chamber 212, the re-addition and melting of silicon particles are achieved, shortening the machine's standby time, increasing machine capacity, and reducing heater energy consumption. The feeding device 100, as an independent unit, facilitates the modification of existing machines.

[0071] According to the single crystal furnace of this application, a feeding device is provided that enables the addition of silicon material (i.e., silicon particles) to the quartz crucible without passing through the auxiliary chamber of the single crystal furnace under hot operating conditions (the heater of the single crystal furnace is on, and molten silicon exists in the quartz crucible). This shortens the machine's standby time and increases its production capacity. In the non-feeding state, the feeding tube is placed in the first area, effectively separating it from the high-temperature state inside the single crystal furnace, improving its service life, and facilitating component maintenance and repair. The feeding tube is close to the surface of the molten silicon, resulting in a short free-fall distance for the silicon particles. When they fall into the molten silicon, their kinetic energy is low, effectively reducing liquid splashing and contamination of the hot-field components and the molten silicon itself, thus improving the stability of subsequent single crystal silicon ingot growth.

[0072] In summary, the feeding device of this application does not require changes to the thermal field structure inside the single crystal furnace, nor does it require modification of the furnace cover. The feeding device can be flexibly installed and removed between the furnace body and the furnace cover. In other words, when the feeding device is needed, it can be installed between the furnace body and the furnace cover; when the feeding device is not needed, it can be easily removed, making operation convenient.

[0073] Unless otherwise defined, the technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used herein is for descriptive purposes only and is not intended to limit the scope of this application. Terms such as “setup” appearing herein can refer to either a component being directly attached to another component or a component being attached to another component via an intermediary. A feature described in one embodiment herein may be applied, alone or in combination with other features, to another embodiment, unless that feature is not applicable in that other embodiment or is otherwise stated.

[0074] This application has been described through the above embodiments; however, it should be understood that the above embodiments are for illustrative purposes only and are not intended to limit this application to the described embodiments. Those skilled in the art will understand that many more variations and modifications can be made based on the teachings of this application, and all such variations and modifications fall within the scope of protection claimed in this application.

Claims

1. A feeding device, characterized in that, The feeding device is used to feed silicon particles into the single crystal furnace, and the feeding device includes: Piping assembly for receiving silicon particles from a silicon feedstock silo, the piping assembly comprising a first part and a second part; and A feeding assembly is disposed inside and connected to the pipeline assembly, and the feeding assembly is used to drive silicon particles inside the pipeline assembly to move along the extension direction of the pipeline assembly. One end of the pipeline assembly, away from the silicon raw material hopper, is used to extend from the side of the single crystal furnace into the interior of the single crystal furnace and point towards the liquid surface of the molten silicon inside the single crystal furnace. Wherein, when the pipeline assembly is connected to the single crystal furnace and the silicon particles are fed to the single crystal furnace, the first part is connected to the second part, the first part extends along a first horizontal direction, the extension direction of the second part is inclined or perpendicular to the first horizontal direction, and the end of the second part away from the first part points to the liquid surface.

2. The feeding device according to claim 1, characterized in that, The piping assembly includes: A receiving pipe, the receiving pipe being used to receive silicon particles from a silicon raw material silo; and A feeding tube, detachably connected to the receiving tube, is used to receive silicon particles from the receiving tube and deliver them to the single crystal furnace; The feeding assembly is installed inside both the receiving pipe and the feeding pipe.

3. The feeding device according to claim 2, characterized in that, When the piping assembly is connected to the single crystal furnace and the silicon particles are fed into the single crystal furnace... The receiving pipe is connected to the feeding pipe, and the receiving pipe extends along the first horizontal direction.

4. The feeding device according to claim 2, characterized in that, The feeding tube includes: The receiving section, wherein the feeding assembly is disposed internally; and The feeding section is connected to the receiving section, and the extending direction of the feeding section is inclined or perpendicular to the extending direction of the receiving section. Wherein, when the pipeline assembly is connected to the single crystal furnace and the silicon particles are fed to the single crystal furnace, the receiving portion extends along the first horizontal direction, and the end of the feeding portion away from the receiving portion points towards the liquid surface.

5. The feeding device according to claim 4, characterized in that, The feeding pipe further includes a transition section disposed between the receiving section and the feeding section, the transition section being connected to both the receiving section and the feeding section; and / or When the pipeline assembly is connected to the single crystal furnace and the silicon particles are fed into the single crystal furnace, the extension direction of the feeding portion is inclined relative to the extension direction of the receiving portion, and the end of the feeding portion away from the receiving portion points to the middle position of the liquid surface.

6. The feeding device according to claim 4, characterized in that, The receiving portions of the receiving pipe and the feeding pipe form the first part of the piping assembly; and / or The second part of the pipeline assembly includes the feeding section of the feeding pipe.

7. The feeding device according to claim 1, characterized in that, The piping assembly includes: A receiving pipe, the receiving pipe being used to receive silicon particles from a silicon raw material silo; and A feeding tube, detachably connected to the receiving tube, is used to receive silicon particles from the receiving tube and deliver them to the single crystal furnace; The receiving pipe is the first part, the feeding pipe is the second part, and the feeding assembly is disposed inside the first part.

8. The feeding device according to claim 1, characterized in that, The feeding assembly is constructed as a spiral feeding structure.

9. The feeding device according to claim 1, characterized in that, The feeding device also includes a housing assembly. The piping assembly is disposed on the housing assembly, and the housing assembly is used to connect to the single crystal furnace.

10. The feeding device according to claim 9, characterized in that, The housing assembly includes: A housing for accommodating the piping assembly, and a housing for connection to the single crystal furnace; and A spacer, the spacer being disposed inside the housing and connected to the housing, to divide the housing into a first region and a second region; The first region has a first communication port for communicating with the silicon raw material warehouse, and the second region has a second communication port for communicating with the single crystal furnace.

11. The feeding device according to claim 10, characterized in that, The housing assembly further includes a first cover plate, which is correspondingly disposed with the first communication port. The first cover plate is closably connected to the housing to control the opening and closing of the first communication port; and / or The spacer is provided with a through hole connecting the first region and the second region. The housing assembly further includes a second cover plate, which is correspondingly disposed with respect to the through hole. The second cover plate is closably connected to the housing to control the opening and closing of the through hole; and / or The outer casing is provided with an observation port for the user to observe the first area.

12. The feeding device according to claim 10, characterized in that, The piping assembly includes: A receiving pipe, the receiving pipe being used to receive silicon particles from a silicon raw material silo; and A feeding tube, detachably connected to the receiving tube, is used to receive silicon particles from the receiving tube and deliver them to the single crystal furnace; The piping assembly has a switchable storage state and an operating state. When the piping assembly is in the retracted state, the receiving pipe is separated from the feeding pipe; When the pipeline assembly is in the operating state, the receiving pipe is connected to the feeding pipe, the receiving pipe extends along the first horizontal direction, and the end of the feeding pipe away from the receiving pipe points towards the liquid surface.

13. The feeding device according to claim 12, characterized in that, The housing assembly also includes a material receiving tube storage compartment, which is connected to the outer shell and communicates with the first region. When the piping assembly is in the stored state, the receiving pipe storage compartment is used to accommodate the receiving pipe.

14. The feeding device according to claim 12, characterized in that, The feeding tube includes: The receiving section, wherein the feeding assembly is disposed internally; and The feeding section is connected to the receiving section, and the extending direction of the feeding section is inclined or perpendicular to the extending direction of the receiving section. When the pipeline assembly is in the working state, the receiving portion extends along the first horizontal direction, and the end of the feeding portion away from the receiving portion points towards the liquid surface. Furthermore, when the piping assembly is in the retracted state, the first area is used to accommodate the feeding pipe.

15. The feeding device according to claim 12, characterized in that, When the piping assembly is in the retracted state, the feeding pipe is in a first position; when the piping assembly is in the operating state, the feeding pipe is in a second position. The feeding device further includes a driving component connected to the feeding pipe to drive the feeding pipe to move between the first position and the second position.

16. A single crystal furnace, characterized in that, The single crystal furnace includes a feeding device according to any one of claims 1 to 15.

17. The single crystal furnace according to claim 16, characterized in that, The single crystal furnace includes: Furnace body; and A furnace cover, located above the furnace body; The feeding device is disposed between the furnace body and the furnace cover, and the feeding device abuts against the furnace body and the furnace cover; When the pipeline assembly delivers the silicon particles to the single crystal furnace, the first portion extends along the first horizontal direction, the extension direction of the second portion is inclined or perpendicular to the first horizontal direction, and the end of the second portion away from the first portion points to the liquid surface of the molten silicon in the single crystal furnace.

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