A single crystal silicon pulling parameter control method, device, equipment and storage medium

Abstract

The application discloses a single crystal silicon pulling parameter control method, device, equipment and storage medium. When the method provided by the application is executed, first, the working condition parameters can be acquired when the furnace table parameters are matched. The parameter file name to be downloaded is determined based on the code matching field in the working condition parameters, and the target constant diameter slope table of the single crystal furnace is determined based on historical single crystal pulling operation data, wherein the code matching field is used to describe the working condition condition to which the parameter file is adapted in the single crystal silicon pulling process, and the historical single crystal pulling operation data includes the crucible residual amount and historical broken line events. Then, the control instruction is issued to the single crystal furnace based on the parameter file name and the target constant diameter slope table, so that the single crystal furnace downloads the corresponding parameter file according to the parameter file name and combines the target constant diameter slope table to execute the single crystal pulling speed control in the constant diameter growth process. The application can improve the processing efficiency of the process parameter configuration of the single crystal silicon under the broken line working condition and the slope table selection accuracy.

Description

Technical Field

[0001] This application relates to the field of monocrystalline silicon manufacturing technology, specifically to a method, apparatus, equipment, and storage medium for controlling monocrystalline silicon crystal pulling parameters. Background Technology

[0002] Currently, wire breakage in the Czochralski method of monocrystalline silicon production—specifically, dislocation fracture during the pulling process of the monocrystalline silicon rod, manifested as the breakage of flattened edges around the rod—is a critical issue affecting production efficiency and product quality. Production practice shows a significant correlation between the probability of wire breakage and the number of pulling stages and the constant diameter growth range. The risk of wire breakage varies greatly depending on the number of pulling stages and the constant diameter growth range. However, current optimization strategies for process parameters based on this wire breakage pattern rely on manual querying and adjustment, resulting in low efficiency and susceptibility to human error.

[0003] Therefore, how to improve the processing efficiency and accuracy of process parameter configuration for monocrystalline silicon under wire breakage conditions is a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0004] To address the aforementioned issues, this application provides a method, apparatus, device, and storage medium for controlling monocrystalline silicon crystal pulling parameters, which can improve the processing efficiency of process parameter configuration and the accuracy of slope table selection under wire breakage conditions for monocrystalline silicon.

[0005] The embodiments of this application disclose the following technical solutions: A method for controlling the parameters of monocrystalline silicon crystal pulling, the method comprising: When performing furnace parameter matching, obtain the operating condition parameters; The name of the parameter file to be downloaded is determined based on the coding matching field in the operating parameters, and the target constant diameter slope table of the single crystal furnace is determined based on historical crystal pulling operation data; the coding matching field is used to describe the operating conditions that the parameter file is adapted to during the single crystal silicon crystal pulling process; the historical crystal pulling operation data includes the crucible remaining material amount and historical wire breakage events; Based on the parameter file name and the target equal diameter slope table, a control command is issued to the single crystal furnace, so that the single crystal furnace downloads the corresponding parameter file according to the parameter file name and combines it with the target equal diameter slope table to perform crystal pulling speed control during the equal diameter growth process.

[0006] In one possible implementation, determining the target constant diameter slope table for the single crystal furnace based on historical crystal pulling operation data includes: When matching the parameters of a newly opened furnace platform for the first time, the first equal diameter slope table is determined as the target equal diameter slope table; When matching furnace parameters after the second feeding, based on the amount of crucible material remaining obtained from the most recent crystal pulling, the equal diameter slope table corresponding to the amount of crucible material remaining is queried, and the obtained equal diameter slope table is used as the target equal diameter slope table; different amounts of crucible material remaining correspond to different equal diameter slope tables; the equal diameter slope table includes a first equal diameter slope table, a second equal diameter slope table, or a third equal diameter slope table; When there is no constant diameter slope table corresponding to the amount of material remaining in the crucible, the target constant diameter slope table is determined based on the historical disconnection events.

[0007] In one possible implementation, determining the target equal-path slope table based on the historical line break events includes: When crystal pulling is performed using the first equal diameter slope table, if it is determined based on the historical breakage events that two consecutive equal diameter growth processes occur within the same crucible crystal pulling cycle when the equal diameter length is greater than the first equal diameter threshold, then at the next equal diameter growth start time after the two breakage equal diameter growth processes, the target equal diameter slope table is switched to the second equal diameter slope table. When crystal pulling is performed using the second equal diameter slope table, if it is determined based on the historical breakage events that within the crystal pulling cycle of the same crucible, two consecutive equal diameter growth processes have grown to an equal diameter length greater than the second equal diameter threshold and no breakage fault has occurred, then the target equal diameter slope table will be switched back to the first equal diameter slope table. When crystal pulling is performed using the second equal diameter slope table, if it is determined based on the historical breakage event that, within the crystal pulling cycle of the same crucible, two consecutive equal diameter growth processes occur with breakage when the equal diameter length is greater than the first equal diameter threshold, then at the next equal diameter growth start time after the two breakage equal diameter growth processes, the target equal diameter slope table is switched to the third equal diameter slope table. The first equal diameter threshold is less than the second equal diameter threshold.

[0008] In one possible implementation, the first equal diameter slope table, the second equal diameter slope table, and the third equal diameter slope table are all used to describe the correspondence between the equal diameter growth length and the growth rate, as well as the corresponding crystal pulling process parameters. The growth rate in the first equal diameter slope table is greater than the growth rate in the second equal diameter slope table, and the growth rate in the second equal diameter slope table is greater than the growth rate in the third equal diameter slope table.

[0009] In one possible implementation, when performing parameter matching for the first time after starting the furnace, the operating parameters include fixed operating parameters and non-fixed operating parameters; when performing parameter matching after a second feeding, the operating parameters include non-fixed operating parameters. The fixed operating condition parameters are used to describe the inherent configuration information of the furnace hardware; the non-fixed operating condition parameters are used to describe the variable production operating condition information for this furnace start-up.

[0010] In one possible implementation, the method further includes: When a signal push error or signal loss occurs during the acquisition of the operating parameters, the first equal diameter slope table is identified as the target equal diameter slope table, and an error alarm window pops up to obtain the parameter file downloaded manually. Based on the target equal diameter slope table and the manually downloaded parameter file, the process of issuing control commands to the single crystal furnace based on the parameter file name and the target equal diameter slope table, as well as subsequent steps, is executed.

[0011] A device for controlling the parameters of monocrystalline silicon crystal pulling, the device comprising: The operating condition acquisition unit is used to acquire operating condition parameters when performing furnace parameter matching. The file name determination unit is used to determine the name of the parameter file to be downloaded based on the encoding matching field in the operating condition parameters; the encoding matching field is used to describe the operating conditions that the parameter file is adapted to during the monocrystalline silicon crystal pulling process. The slope table determination unit is used to determine the target constant diameter slope table of the single crystal furnace based on historical crystal pulling operation data; the historical crystal pulling operation data includes crucible material remaining amount and historical wire breakage events. The instruction issuing unit is used to issue control instructions to the single crystal furnace based on the parameter file name and the target equal diameter slope table, so that the single crystal furnace downloads the corresponding parameter file according to the parameter file name and combines it with the target equal diameter slope table to perform crystal pulling speed control during the equal diameter growth process.

[0012] In one possible implementation, the slope table determination unit specifically includes: The initial configuration unit is used to determine the first equal diameter slope table as the target equal diameter slope table when matching the parameters of a newly opened furnace platform for the first time. The residual material matching unit, when performing furnace parameter matching after secondary feeding, is used to look up the equal diameter slope table corresponding to the residual material of the crucible obtained from the most recent crystal pulling, and use the obtained equal diameter slope table as the target equal diameter slope table; different residual material of the crucible corresponds to different equal diameter slope tables; the equal diameter slope table includes a first equal diameter slope table, a second equal diameter slope table, or a third equal diameter slope table; The wire breakage event identification unit is used to determine the target equal diameter slope table based on the historical wire breakage events when there is no equal diameter slope table corresponding to the amount of material remaining in the crucible.

[0013] A single-crystal silicon crystal pulling parameter control device includes: a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, it implements the single-crystal silicon crystal pulling parameter control method as described above.

[0014] A computer-readable storage medium storing instructions that, when executed on a terminal device, cause the terminal device to perform the single-crystal silicon crystal pulling parameter control method as described above.

[0015] Compared with the prior art, this application has the following advantages: This application provides a method, apparatus, device, and storage medium for controlling monocrystalline silicon crystal pulling parameters. Specifically, when executing the monocrystalline silicon crystal pulling parameter control method provided in this application embodiment, the furnace operating condition parameters are first acquired in real time during furnace parameter matching to accurately capture the actual production status after each furnace start-up and material feeding, providing a real and effective data foundation for subsequent process matching. Next, the parameter file name is automatically determined based on the coded matching field in the operating condition parameters. The appropriate process parameters can be accurately located according to preset operating condition adaptation rules, avoiding manual selection errors. Simultaneously, a target equal-diameter slope table is determined by combining historical crystal pulling operation data such as crucible material remaining amount and historical wire breakage events. This table can conform to the wire breakage risk patterns corresponding to different crystal pulling stages and different remaining material conditions, achieving differentiated and accurate selection of the slope table. Finally, by uniformly issuing control commands, the monocrystalline furnace automatically loads the corresponding parameter file and completes equal-diameter pulling speed control in conjunction with the target equal-diameter slope table. No manual querying or parameter adjustment is required throughout the process, significantly improving parameter configuration efficiency and matching accuracy, effectively adapting to complex and changing crystal pulling conditions, and reducing the probability of wire breakage failures. This application overcomes the shortcomings of low processing efficiency and large human error caused by manual operation, and can adapt to the differentiated wire breakage risks of different crystal pulling stages and different constant diameter growth ranges. At the same time, it can realize the automatic configuration of process parameters under wire breakage conditions, improve the efficiency of parameter configuration and the accuracy of slope table selection, and mitigate the adverse effects of wire breakage on monocrystalline silicon production efficiency and finished product quality. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in this embodiment or the prior art, the drawings used in the description of the embodiment or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 A flowchart illustrating a method for controlling monocrystalline silicon crystal pulling parameters, as provided in this application embodiment; Figure 2This is a schematic diagram of a single-crystal silicon crystal pulling parameter control device provided in an embodiment of this application. Detailed Implementation

[0018] To facilitate understanding of the technical solutions provided in the embodiments of this application, the background technology involved in the embodiments of this application will be described below.

[0019] In the Czochralski (CZ) method for producing monocrystalline silicon, the CZ method involves pulling monocrystalline silicon ingots from molten polycrystalline silicon. The core process involves immersing a seed crystal in high-temperature molten silicon, controlling the temperature, rotation, and lifting speed to allow silicon atoms to crystallize in a directional manner, forming a monocrystalline ingot. The process includes stages such as crystal pulling, shoulder formation, constant-diameter growth, and finishing. Constant-diameter growth is the core stage in the CZ method, referring to the process of maintaining a constant crystal diameter and continuing growth after crystal pulling, shoulder formation, and shoulder rotation. The pulling speed, as the lifting speed during the monocrystalline silicon ingot pulling process, is a key process parameter in the constant-diameter stage, directly affecting the interface shape between the crystal and the melt, as well as the stress distribution in the crystal. The constant-diameter slope table is a parameter table used to control the pulling speed variation curve during the constant-diameter growth stage, containing target pulling speed values ​​corresponding to different constant-diameter lengths.

[0020] Monocrystalline silicon rods are prone to breakage (bud breakage) during the constant diameter growth stage. Breakage is a fracture phenomenon caused by crystal dislocations during the pulling process, manifesting as the breakage of flat edges around the monocrystalline silicon rod. This defect is a core problem restricting the production efficiency and product quality of monocrystalline silicon. Based on the pulling progress, the crystal pulling process can be divided into different stages: R1-R2 is the initial stable start-up period, R3-R9 is the mid-stage sprint period, and RA-RC is the final stage of proactive prevention.

[0021] Extensive production data shows that the probability of wire breakage is highly correlated with the crystal pulling stage and the constant diameter growth range, exhibiting an overall distribution pattern of high incidence in the early stage, secondary incidence in the middle stage, and low incidence in the late stage: the wire breakage rate in the R1-R2 stage is 15%-25%, the wire breakage rate in the R3-R9 stage is 6%-10%, and the wire breakage rate in the RA-RC stage is only 3%-5%. Moreover, the 500-1500mm constant diameter growth range of single crystal silicon rods is the high-incidence range for wire breakage, with a wire breakage rate of up to 30%-60%.

[0022] The current process optimization methods used to address the aforementioned differentiated wire breakage distribution patterns still rely on manually querying working condition data and manually adjusting the pulling speed process parameters in the equal diameter slope table, which is inefficient and prone to human error.

[0023] To address this issue, this application provides a method, apparatus, device, and storage medium for controlling monocrystalline silicon crystal pulling parameters. When matching furnace parameters, the actual production status information of the furnace is directly collected, avoiding information deviations and collection delays caused by manual input of operating conditions. Then, the name of the parameter file to be downloaded is determined based on the coded matching field within the operating condition parameters. Simultaneously, a target constant diameter slope table for the monocrystalline furnace is determined based on historical crystal pulling operation data including crucible material remaining amount and historical wire breakage events. The coded matching field allows for rapid location of the parameter file adapted to the current operating conditions, making the matching logic simple and reliable. Introducing crucible material remaining amount and historical wire breakage events as judgment criteria takes into account both the state of remaining crucible material and past wire breakage failures, allowing the selected target constant diameter slope table to adapt to changes in wire breakage risk at different stages of the crucible's life cycle, rather than being limited to a fixed process table. Subsequently, based on the parameter file name and the target equal diameter slope table, control commands are sent to the single crystal furnace to drive the single crystal furnace to download the corresponding parameter file and complete the crystal pulling speed control in the equal diameter growth stage in combination with the target equal diameter slope table. This step realizes the linkage execution of parameter file loading and equal diameter pulling speed control. The whole process is completed automatically, reducing manual intervention, improving parameter configuration efficiency, and improving the crystal pulling process control effect in the equal diameter stage.

[0024] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0025] See Figure 1 The figure is a flowchart of a method for controlling the parameters of monocrystalline silicon crystal pulling according to an embodiment of this application. Figure 1 As shown, the method for controlling the parameters of monocrystalline silicon crystal pulling may include steps S101-S103: S101: Obtain operating parameters when performing furnace platform parameter matching.

[0026] To obtain raw data reflecting the actual production conditions of the furnace before parameter matching is performed, and to avoid information delays, omissions, or errors caused by manually reviewing ledgers and recording operating conditions on-site, the operation of acquiring operating condition parameters can be performed when furnace parameter matching is triggered. This furnace parameter matching occurs after a new furnace start-up or after a second feeding. The Manufacturing Execution System (MES) actively collects operating condition parameters from the production interaction chain. These parameters include coded matching fields for matching process documents and can distinguish between fixed and non-fixed operating condition parameters. Fixed operating condition parameters correspond to the inherent configuration of the furnace hardware, while non-fixed operating condition parameters correspond to the variable production information for this furnace start-up. For example, when the quartz crucible completes its second feeding and is ready to start a new round of crystal pulling, the system triggers the furnace parameter matching process. At this time, the system automatically collects fixed operating parameters such as the furnace number, hot zone model, and silicon material grade corresponding to the current furnace, as well as non-fixed operating parameters related to the crystal rod specifications and crucible remaining material amount corresponding to this production, to obtain a complete set of operating parameters. This provides real and real-time data input for subsequently determining the name of the parameter file to be downloaded and selecting the target equal diameter slope table.

[0027] S102: Determine the name of the parameter file to be downloaded based on the encoding matching field in the operating parameters, and determine the target constant diameter slope table of the single crystal furnace based on historical crystal pulling operation data.

[0028] To quickly locate suitable process parameter files based on the actual production conditions of the current furnace, and to select an equal-diameter slope table suitable for the risk of wire breakage by fully considering the crucible material inventory and historical failure data, thus eliminating the slow matching and error-prone selection defects caused by manually reviewing process ledgers and manually selecting parameter files and slope tables, the MES system can simultaneously execute two matching judgment logics: On the one hand, the MES system reads the coded matching field carried within the operating parameters, and uses the coded matching field to parse out multiple operating condition information such as plant area, wafer area, hot zone size, crucible height, raw material type, and pulling diameter, thereby determining the name of the parameter file to be downloaded; on the other hand, the MES system retrieves the stored historical crystal pulling operation data, which contains two key pieces of information: crucible material remaining amount and historical wire breakage events. By comprehensively considering the amount of remaining material in the crucible and whether there have been consecutive wire breakage failures in the past, the target equal-diameter slope table used by the single crystal furnace is determined.

[0029] The coding matching field is used to characterize the working conditions that the parameter file is adapted to during the monocrystalline silicon crystal pulling process. The parameter file follows a unified coding naming rule, and the file name is composed of multiple fields concatenated together.

[0030] For example, suppose a parameter file is named: 7-A-Q0001-S0-36-650-JG-345-K1-300-R1-R8-300. The segments in this filename represent: 7 for the No. 7 single-crystal plant (plant area), A for area A (piece area), Q0001 for the PLC version number, S0 for standard parameters (parameter type), 36 for a 36-inch hot zone, 650 for a crucible height of 650mm, JG for an enhanced auxiliary chamber (auxiliary chamber type), and 345 for a water-cooled screen diameter of 3mm. 45mm, K1 represents granular silicon (raw material type), 300 represents a pulling diameter of 300mm, R1-R8 represent the appropriate crystal pulling stage intervals, and 300 represents the appropriate crucible remaining material amount of 300kg. When the furnace parameters are matched, the coded matching field in the operating parameters parses all the above operating information. The MES system will then search for and determine 7-A-Q0001-S0-36-650-JG-345-K1-300-R1-R8-300 as the parameter file name to be downloaded. At the same time, it reads the real-time remaining material amount of 300kg for the crucible in the MES, as well as the historical breakage events of two consecutive wire breaks during the previous R1-R4 pulling process of the crucible. Combining these two data points, the MES system selects the second equal diameter slope table at a low pulling speed as the target equal diameter slope table for this production, providing a process basis for subsequent equal diameter growth pulling speed control.

[0031] In one possible implementation, the coded matching fields include plant area, area, PLC version number, parameter type, hot zone size, crucible height, auxiliary chamber type, water-cooled screen diameter, raw material type, drawing diameter, segment interval, and remaining material amount.

[0032] S103: Based on the parameter file name and the target equal diameter slope table, a control command is sent to the single crystal furnace so that the single crystal furnace downloads the corresponding parameter file according to the parameter file name and combines it with the target equal diameter slope table to perform crystal pulling speed control during the equal diameter growth process.

[0033] In order to simultaneously send the parameter file adapted to the current operating conditions and the target equal diameter slope table obtained in the previous steps to the single crystal furnace, so as to realize the automatic loading of process parameters and the linkage control of the pulling speed in the equal diameter stage, and avoid the cumbersome operation and inconsistent parameter matching caused by manually importing parameter files and manually selecting equal diameter slope tables, the corresponding control commands can be generated based on the determined parameter file name and the target equal diameter slope table and sent to the single crystal furnace.

[0034] After receiving the control command, the single crystal furnace downloads and loads the corresponding parameter file according to the parameter file name carried in the command. At the same time, it calls the selected target equal diameter slope table. When entering the equal diameter growth stage, it executes crystal pulling speed control according to the target pulling speed value corresponding to different equal diameter lengths in the equal diameter slope table.

[0035] This method encapsulates parameter file download and slope table retrieval in the same round of control command interaction, ensuring that the parameter file and the target constant diameter slope table match each other, and preventing mismatches between the process file and the slope table. The entire process is executed automatically without the need for operators to configure it separately. It can adjust the pulling speed in real time based on the amount of material remaining in the crucible and the slope table obtained by filtering historical wire breakage events. It optimizes the crystal stress state of the constant diameter growth process for different wire breakage risk conditions, reduces the probability of wire breakage failure, and improves the process stability of crystal pulling production.

[0036] Based on the content of S101-S103, it is understood that the current operating parameters are automatically acquired during the furnace parameter matching stage to collect production status data in real time and objectively, avoiding the lag and omissions of manual condition assessment. Next, the coded matching field in the operating parameters is used to accurately determine the name of the parameter file to be downloaded, ensuring a high degree of compatibility and matching accuracy between the parameter file and the current production conditions. Simultaneously, the target equal-diameter slope table is dynamically determined by combining historical crystal pulling operation data, including crucible material remaining amount and historical breakage events. This ensures that the slope table selection fully matches the differentiated production scenarios with different crucible lifecycles and varying breakage risks, overcoming the shortcomings of traditional fixed parameters that cannot adapt to fluctuations in operating conditions. Finally, control commands are issued in tandem with the parameter file name and the target equal-diameter slope table, enabling the single crystal furnace to automatically load the corresponding parameters and match the optimal slope table to complete the pulling speed control in the equal-diameter stage. This achieves an automated closed loop for the entire parameter matching, slope selection, and pulling speed control process, significantly reducing manual intervention, effectively improving parameter configuration efficiency and process adaptation accuracy, and lowering the probability of breakage in different stages and different equal-diameter ranges.

[0037] In one possible implementation, to differentiate between two different production scenarios—new furnace start-up and secondary charging—a stratified and graded equal-diameter slope table is selected based on the crucible material state. Step S102 determines the target equal-diameter slope table for the single crystal furnace based on historical crystal pulling operation data, including: When matching the parameters of a newly opened furnace platform for the first time, the first equal diameter slope table is determined as the target equal diameter slope table; When matching furnace parameters after the second feeding, based on the amount of crucible material remaining obtained from the most recent crystal pulling, the equal diameter slope table corresponding to the amount of crucible material remaining is queried, and the obtained equal diameter slope table is used as the target equal diameter slope table; different amounts of crucible material remaining correspond to different equal diameter slope tables; the equal diameter slope table includes a first equal diameter slope table, a second equal diameter slope table, or a third equal diameter slope table; When there is no constant diameter slope table corresponding to the amount of material remaining in the crucible, the target constant diameter slope table is determined based on the historical disconnection events.

[0038] Specifically, in the scenario of matching the parameters of a newly opened furnace for the first time, the crucible has not yet experienced crystal pulling consumption, there is no reference crucible remaining material amount and historical line breakage events in this crucible cycle, so the first equal diameter slope table is directly determined as the target equal diameter slope table, and the first equal diameter growth is carried out with the default high-speed process benchmark. When performing furnace parameter matching after the second feeding, if there is still residual silicon material inside the crucible due to the previous crystal pulling process, the amount of residual material in the crucible obtained from the most recent crystal pulling is read. The equal diameter slope table that matches the amount of residual material in the pre-established mapping relationship is queried, and the query result is directly used as the target equal diameter slope table. Different amounts of residual material in the crucible correspond to one of the first, second, and third equal diameter slope tables, respectively, to match the change in thermal field caused by the change in crucible material consumption. If no equal diameter slope table directly corresponds to the current amount of residual material in the crucible is found after the query, the fallback judgment logic is switched to determine the target equal diameter slope table based on historical disconnection events.

[0039] This hierarchical processing logic prioritizes using the intuitive material condition of the remaining crucible material to complete the slope table matching. It only uses the line break event for judgment when there is no matching entry. This fully utilizes material condition information and can also be combined with historical line break failure risks as a backup, taking into account both process matching efficiency and line break prevention capabilities.

[0040] In one possible implementation, to dynamically downgrade or upgrade the equal-diameter slope table based on actual wire breakage events within the same crucible cycle, the drawing speed is reduced to suppress wire breakage when the risk of breakage is high, and a higher drawing speed is restored to ensure production efficiency when the operating conditions are stable and there are no wire breakages. The step of determining the target equal-diameter slope table based on the historical wire breakage events includes: When crystal pulling is performed using the first equal diameter slope table, if it is determined based on the historical breakage events that two consecutive equal diameter growth processes occur within the same crucible crystal pulling cycle when the equal diameter length is greater than the first equal diameter threshold, then at the next equal diameter growth start time after the two breakage equal diameter growth processes, the target equal diameter slope table is switched to the second equal diameter slope table. When crystal pulling is performed using the second equal diameter slope table, if it is determined based on the historical breakage events that within the crystal pulling cycle of the same crucible, two consecutive equal diameter growth processes have grown to an equal diameter length greater than the second equal diameter threshold and no breakage fault has occurred, then the target equal diameter slope table will be switched back to the first equal diameter slope table. When crystal pulling is performed using the second equal diameter slope table, if, based on the historical breakage events, it is determined that within the crystal pulling cycle of the same crucible, two consecutive equal diameter growth processes occur with breakage when the equal diameter length is greater than the first equal diameter threshold, then at the next equal diameter growth start time after the two breakage equal diameter growth processes, the target equal diameter slope table is switched to the third equal diameter slope table.

[0041] Specifically, when using the first equal diameter slope table to carry out crystal pulling operations, if the historical breakage events identify two consecutive equal diameter growth processes within the same crucible crystal pulling cycle, both of which breakage occurs when the equal diameter length exceeds the first equal diameter threshold, then after the equal diameter growth process corresponding to the two breakages ends and at the start time of the next equal diameter growth, the target equal diameter slope table is switched to the second equal diameter slope table, and the pulling speed is reduced to address the breakage risk highlighted under the current crucible conditions; After switching to the second equal diameter slope table for crystal pulling, if, based on historical breakage events, two consecutive equal diameter growth processes within the same crucible crystal pulling cycle both grow to an equal diameter length greater than the second equal diameter threshold, and no breakage occurs in either process, it indicates that the current crucible operating conditions are stabilizing. The target equal diameter slope table can be restored to the first equal diameter slope table to return to a higher pulling speed level and ensure production capacity. If, during the second equal diameter slope table usage phase, two consecutive equal diameter growth processes occur within the same crucible crystal pulling cycle, and both breakages occur when the equal diameter length exceeds the first equal diameter threshold, then the degradation logic continues to execute. At the start of the next equal diameter growth cycle after the two breakages, the target equal diameter slope table is switched to the third equal diameter slope table to further reduce the pulling speed and avoid the risk of breakage.

[0042] Wherein, the first equal diameter threshold (e.g., 1000 mm) is less than the second equal diameter threshold (e.g., 3000 mm).

[0043] This switching logic uses two consecutive equal-diameter growth processes as the judgment sample, which can avoid the slope table switching caused by a single accidental disturbance. It can gradually reduce the pulling speed to improve the stability of crystal growth when the wire breakage occurs frequently, and can automatically restore a higher pulling speed after the working conditions are improved, thus achieving a dynamic balance between the risk of wire breakage and production efficiency.

[0044] In one possible implementation, the first equal diameter slope table, the second equal diameter slope table, and the third equal diameter slope table are all used to describe the correspondence between the equal diameter growth length and the growth rate, as well as the corresponding crystal pulling process parameters; each equal diameter slope table includes multiple rows of entries, and each row of entries includes multiple process information such as equal diameter growth length, growth rate, furnace pressure, main heating power offset, intermediate heating power setting, intermediate heating ratio, bottom heating power, crucible rotation speed, seed crystal rotation speed, liquid outlet distance, liquid outlet distance control coefficient, and argon flow rate; Among them, the three slope tables form a progressively decreasing speed configuration relationship, with the growth rate configured by the first equal diameter slope table being higher than that of the second equal diameter slope table, and the growth rate configured by the second equal diameter slope table being higher than that of the third equal diameter slope table.

[0045] When a breakage risk triggers a slope table switch, in addition to the growth rate being gradually reduced as the risk increases, other related process parameters such as heating, rotation speed, gas flow rate, and liquid nozzle distance are also updated synchronously with the table entries, rather than simply modifying the single variable of pulling speed. This adapts to the thermal field and melt environment under different breakage risks, further reducing crystal stress, decreasing the probability of breakage, and balancing crystal growth stability and production efficiency.

[0046] In one possible implementation, when performing parameter matching for the first time after starting the furnace, the operating parameters include fixed operating parameters and non-fixed operating parameters; when performing parameter matching after a second feeding, the operating parameters include non-fixed operating parameters. The fixed operating condition parameters are used to describe the inherent configuration information of the furnace hardware (e.g., water-cooled screen type, water-cooled screen diameter, plant area, section area, furnace number, drawing diameter, hot zone size, crucible height, auxiliary chamber type, PLC version number, etc.); the non-fixed operating condition parameters are used to describe the variable production operating condition information for this furnace start-up (e.g., full crucible feed amount, raw materials, start section number, end section number, minimum remaining material amount, maximum remaining material amount, parameter type, etc.).

[0047] In one possible implementation, to address communication anomalies such as abnormal signal push or missed signal transmission during the operational parameter acquisition process, and to prevent the entire parameter matching process from being interrupted due to operational parameter acquisition failure, thus ensuring that the furnace can continue crystal pulling production, this application also adds an anomaly fallback handling logic: When a signal push anomaly or signal loss occurs during the acquisition of the operating parameters, the first equal diameter slope table is identified as the target equal diameter slope table, and an anomaly alarm window pops up to obtain the manually downloaded parameter file; and based on the target equal diameter slope table and the manually downloaded parameter file, the process of issuing control commands to the single crystal furnace based on the parameter file name and the target equal diameter slope table, as well as subsequent steps, is executed.

[0048] Specifically, if a signal push anomaly or signal loss is detected during the acquisition of operating parameters, the first equal-diameter slope table is directly selected as the target equal-diameter slope table. Simultaneously, an anomaly alarm window pops up, reminding the operator to manually download the parameter file. After obtaining the target equal-diameter slope table and the manually downloaded parameter file, the process continues by issuing control commands to the single crystal furnace to complete the crystal pulling speed control for the subsequent equal-diameter growth stage. This anomaly fallback mechanism does not directly interrupt the production process when the communication acquisition link fails. It maintains production by default selecting the first equal-diameter slope table and manually supplementing the parameter file, while simultaneously using an alarm window to promptly report the fault to the operator, balancing production continuity and fault awareness.

[0049] In one possible implementation, to handle process failures such as parameter file matching failures and parameter file download failures, and to prevent production process stagnation due to abnormalities in the parameter library matching or download stages, while also retaining exception information and production operation data for easy traceability of subsequent issues, this application also sets up corresponding exception handling and logging logic: When the furnace receives a signal and fails to match the parameter file in the parameter library, or when the parameter download fails after matching, an abnormal alarm window pops up, the crystal growth record is output, and the manually downloaded parameter file obtained through the operation triggered by the abnormal alarm window is received, while the abnormal signal is recorded. When the parameter download is successful, the parameter name and the usage of the target equal diameter slope table are recorded to the centralized control server.

[0050] Specifically, when the furnace receives a signal and fails to match the parameter file in the parameter library, or when the parameter download operation fails after the match is completed, the system pops up an abnormal alarm window and outputs the crystal growth record. It also receives the manually downloaded parameter file obtained by the operator through the abnormal alarm window and records the abnormal signal generated. After the parameter download operation is successfully completed, the parameter name and the actual usage of the target isochronous slope table are uploaded and recorded to the centralized control server.

[0051] When errors occur during the matching or downloading process, this processing logic prompts manual intervention via an alarm pop-up to complete parameter completion, ensuring that crystal pulling production can continue. On the one hand, it retains abnormal signals to facilitate technicians in locating the root cause of the fault in the matching or downloading process afterward. On the other hand, it collects parameter names and slope table usage information into a unified control server, realizing the archiving of production data throughout the entire process and providing real production data support for subsequent process review and algorithm iteration optimization.

[0052] See Figure 2 , Figure 2 This is a schematic diagram of a single-crystal silicon crystal pulling parameter control device provided in an embodiment of this application. Figure 2 As shown, the single-crystal silicon crystal pulling parameter control device includes: The operating condition acquisition unit 201 is used to acquire operating condition parameters when performing furnace platform parameter matching. The file name determination unit 202 is used to determine the name of the parameter file to be downloaded based on the encoding matching field in the operating condition parameters; the encoding matching field is used to describe the operating conditions that the parameter file is adapted to during the monocrystalline silicon crystal pulling process. The slope table determination unit 203 is used to determine the target constant diameter slope table of the single crystal furnace based on historical crystal pulling operation data; the historical crystal pulling operation data includes crucible material remaining amount and historical wire breakage events. The instruction issuing unit 204 is used to issue control instructions to the single crystal furnace based on the parameter file name and the target equal diameter slope table, so that the single crystal furnace downloads the corresponding parameter file according to the parameter file name and combines it with the target equal diameter slope table to perform crystal pulling speed control during the equal diameter growth process.

[0053] In one possible implementation, the slope table determination unit 203 specifically includes: The initial configuration unit is used to determine the first equal diameter slope table as the target equal diameter slope table when matching the parameters of a newly opened furnace platform for the first time. The residual material matching unit, when performing furnace parameter matching after secondary feeding, is used to look up the equal diameter slope table corresponding to the residual material of the crucible obtained from the most recent crystal pulling, and use the obtained equal diameter slope table as the target equal diameter slope table; different residual material of the crucible corresponds to different equal diameter slope tables; the equal diameter slope table includes a first equal diameter slope table, a second equal diameter slope table, or a third equal diameter slope table; The wire breakage event identification unit is used to determine the target equal diameter slope table based on the historical wire breakage events when there is no equal diameter slope table corresponding to the amount of material remaining in the crucible.

[0054] In one possible implementation, the disconnection event identification unit is specifically used for: When crystal pulling is performed using the first equal diameter slope table, if it is determined based on the historical breakage events that two consecutive equal diameter growth processes occur within the same crucible crystal pulling cycle when the equal diameter length is greater than the first equal diameter threshold, then at the next equal diameter growth start time after the two breakage equal diameter growth processes, the target equal diameter slope table is switched to the second equal diameter slope table. When crystal pulling is performed using the second equal diameter slope table, if it is determined based on the historical breakage events that within the crystal pulling cycle of the same crucible, two consecutive equal diameter growth processes have grown to an equal diameter length greater than the second equal diameter threshold and no breakage fault has occurred, then the target equal diameter slope table will be switched back to the first equal diameter slope table. When crystal pulling is performed using the second equal diameter slope table, if it is determined based on the historical breakage event that, within the crystal pulling cycle of the same crucible, two consecutive equal diameter growth processes occur with breakage when the equal diameter length is greater than the first equal diameter threshold, then at the next equal diameter growth start time after the two breakage equal diameter growth processes, the target equal diameter slope table is switched to the third equal diameter slope table. The first equal diameter threshold is less than the second equal diameter threshold.

[0055] In one possible implementation, the first equal diameter slope table, the second equal diameter slope table, and the third equal diameter slope table are all used to describe the correspondence between the equal diameter growth length and the growth rate, as well as the corresponding crystal pulling process parameters. The growth rate in the first equal diameter slope table is greater than the growth rate in the second equal diameter slope table, and the growth rate in the second equal diameter slope table is greater than the growth rate in the third equal diameter slope table.

[0056] In one possible implementation, when performing parameter matching for the first time after starting the furnace, the operating parameters include fixed operating parameters and non-fixed operating parameters; when performing parameter matching after a second feeding, the operating parameters include non-fixed operating parameters. The fixed operating condition parameters are used to describe the inherent configuration information of the furnace hardware; the non-fixed operating condition parameters are used to describe the variable production operating condition information for this furnace start-up.

[0057] In addition, this application embodiment also provides a single-crystal silicon crystal pulling parameter control device, including: a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, it implements the single-crystal silicon crystal pulling parameter control method as described above.

[0058] In addition, this application embodiment also provides a computer-readable storage medium storing instructions that, when executed on a terminal device, cause the terminal device to perform the single-crystal silicon crystal pulling parameter control method as described above.

[0059] This application's embodiments automatically acquire operating parameters during furnace parameter matching. By accurately matching the corresponding parameter file name through the coded matching field of the operating parameters, and adaptively determining the target constant diameter slope table for the single crystal furnace based on the crucible remaining material amount and historical crystal pulling operation data of historical wire breakage events, it eliminates the need for manual data querying and parameter adjustment operations, effectively avoiding the inefficiencies and large parameter matching errors caused by manual operation. Simultaneously, this application can specifically adapt to differentiated wire breakage risk conditions of different crystal pulling stages and different constant diameter growth intervals. By matching adaptable parameter files and target constant diameter slope tables, it precisely controls the crystal pulling speed during the constant diameter growth stage, achieving automated and precise configuration of process parameters under wire breakage conditions. This significantly improves the efficiency of single crystal silicon crystal pulling process parameter configuration and the accuracy of slope table selection, effectively improving the wire breakage problem in the single crystal silicon production process and ensuring production efficiency and finished product quality.

[0060] The foregoing provides a detailed description of a method, apparatus, device, and storage medium for controlling single-crystal silicon crystal pulling parameters provided in this application. The various embodiments in the specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since it corresponds to the method disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to in the method section. It should be noted that those skilled in the art can make several improvements and modifications to this application without departing from the principles of this application, and these improvements and modifications also fall within the protection scope of the claims of this application.

[0061] It should be understood that in this application, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

Claims

1. A method for controlling the parameters of single-crystal silicon crystal pulling, characterized in that, The method includes: When performing furnace parameter matching, obtain the operating condition parameters; The name of the parameter file to be downloaded is determined based on the coding matching field in the operating parameters, and the target constant diameter slope table of the single crystal furnace is determined based on historical crystal pulling operation data; the coding matching field is used to describe the operating conditions that the parameter file is adapted to during the single crystal silicon crystal pulling process; the historical crystal pulling operation data includes the crucible remaining material amount and historical wire breakage events; Based on the parameter file name and the target equal diameter slope table, a control command is issued to the single crystal furnace, so that the single crystal furnace downloads the corresponding parameter file according to the parameter file name and combines it with the target equal diameter slope table to perform crystal pulling speed control during the equal diameter growth process.

2. The method according to claim 1, characterized in that, The table for determining the target constant diameter slope of the single crystal furnace based on historical crystal pulling operation data includes: When matching the parameters of a newly opened furnace platform for the first time, the first equal diameter slope table is determined as the target equal diameter slope table; When matching furnace parameters after the second feeding, based on the amount of crucible material remaining obtained from the most recent crystal pulling, the equal diameter slope table corresponding to the amount of crucible material remaining is queried, and the obtained equal diameter slope table is used as the target equal diameter slope table; different amounts of crucible material remaining correspond to different equal diameter slope tables; the equal diameter slope table includes a first equal diameter slope table, a second equal diameter slope table, or a third equal diameter slope table; When there is no constant diameter slope table corresponding to the amount of material remaining in the crucible, the target constant diameter slope table is determined based on the historical disconnection events.

3. The method according to claim 2, characterized in that, The determination of the target equal-diameter slope table based on the historical line break events includes: When crystal pulling is performed using the first equal diameter slope table, if it is determined based on the historical breakage events that two consecutive equal diameter growth processes occur within the same crucible crystal pulling cycle when the equal diameter length is greater than the first equal diameter threshold, then at the next equal diameter growth start time after the two breakage equal diameter growth processes, the target equal diameter slope table is switched to the second equal diameter slope table. When crystal pulling is performed using the second equal diameter slope table, if it is determined based on the historical breakage events that within the crystal pulling cycle of the same crucible, two consecutive equal diameter growth processes have grown to an equal diameter length greater than the second equal diameter threshold and no breakage fault has occurred, then the target equal diameter slope table will be switched back to the first equal diameter slope table. When crystal pulling is performed using the second equal diameter slope table, if it is determined based on the historical breakage event that, within the crystal pulling cycle of the same crucible, two consecutive equal diameter growth processes occur with breakage when the equal diameter length is greater than the first equal diameter threshold, then at the next equal diameter growth start time after the two breakage equal diameter growth processes, the target equal diameter slope table is switched to the third equal diameter slope table. The first equal diameter threshold is less than the second equal diameter threshold.

4. The method according to claim 2 or 3, characterized in that, The first equal diameter slope table, the second equal diameter slope table, and the third equal diameter slope table are all used to describe the correspondence between equal diameter growth length, growth rate, and associated crystal pulling process parameters; The growth rate in the first equal diameter slope table is greater than the growth rate in the second equal diameter slope table, and the growth rate in the second equal diameter slope table is greater than the growth rate in the third equal diameter slope table.

5. The method according to claim 1, characterized in that, When performing parameter matching for the first time after starting a new furnace, the operating parameters include fixed operating parameters and non-fixed operating parameters; when performing parameter matching after a second feeding, the operating parameters include non-fixed operating parameters. The fixed operating condition parameters are used to describe the inherent configuration information of the furnace hardware; the non-fixed operating condition parameters are used to describe the variable production operating condition information for this furnace start-up.

6. The method according to claim 1, characterized in that, The method further includes: When a signal push error or signal loss occurs during the acquisition of the operating parameters, the first equal diameter slope table is identified as the target equal diameter slope table, and an error alarm window pops up to obtain the parameter file downloaded manually. Based on the target equal diameter slope table and the manually downloaded parameter file, the process of issuing control commands to the single crystal furnace based on the parameter file name and the target equal diameter slope table, as well as subsequent steps, is executed.

7. A device for controlling parameters of single-crystal silicon crystal pulling, characterized in that, The device includes: The operating condition acquisition unit is used to acquire operating condition parameters when performing furnace parameter matching. The file name determination unit is used to determine the name of the parameter file to be downloaded based on the encoding matching field in the operating condition parameters; the encoding matching field is used to describe the operating conditions that the parameter file is adapted to during the monocrystalline silicon crystal pulling process. The slope table determination unit is used to determine the target constant diameter slope table of the single crystal furnace based on historical crystal pulling operation data; the historical crystal pulling operation data includes crucible material remaining amount and historical wire breakage events. The instruction issuing unit is used to issue control instructions to the single crystal furnace based on the parameter file name and the target equal diameter slope table, so that the single crystal furnace downloads the corresponding parameter file according to the parameter file name and combines it with the target equal diameter slope table to perform crystal pulling speed control during the equal diameter growth process.

8. The apparatus according to claim 7, characterized in that, The slope table determination unit specifically includes: The initial configuration unit is used to determine the first equal diameter slope table as the target equal diameter slope table when matching the parameters of a newly opened furnace platform for the first time. The residual material matching unit, when performing furnace parameter matching after secondary feeding, is used to look up the equal diameter slope table corresponding to the residual material of the crucible obtained from the most recent crystal pulling, and use the obtained equal diameter slope table as the target equal diameter slope table; different residual material of the crucible corresponds to different equal diameter slope tables; the equal diameter slope table includes a first equal diameter slope table, a second equal diameter slope table, or a third equal diameter slope table; The wire breakage event identification unit is used to determine the target equal diameter slope table based on the historical wire breakage events when there is no equal diameter slope table corresponding to the amount of material remaining in the crucible.

9. A single-crystal silicon crystal pulling parameter control device, characterized in that, include: A memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor, when executing the computer program, implements the single-crystal silicon crystal pulling parameter control method as described in any one of claims 1-6.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores instructions that, when executed on a terminal device, cause the terminal device to perform the single-crystal silicon crystal pulling parameter control method as described in any one of claims 1-6.

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