Semiconductor process gas short-range high-purity delivery control method

Abstract

The application discloses a semiconductor process gas short-range high-purity conveying control method, relates to the technical field of semiconductor manufacturing, and comprises the following steps: collecting multiple process gas inlet flow, inlet pressure and primary purity data of a semiconductor epitaxial process, uniformly limiting the multiple process gases in a preset range before entering a machine side, and respectively introducing the multiple process gases into corresponding gas inlet paths, so as to establish consistent input conditions for terminal purification treatment of the machine side. The application sets the terminal purification position on the machine side and shortens the conveying distance, so that the gas can quickly enter a reaction area after completing purification, and the introduction of impurities in the conveying process is reduced. Meanwhile, through continuous smooth flow control and residence time compression, gas stagnation is avoided, and the probability of impurity release is reduced, so that the high-purity state is maintained in the whole process, and the stability of the epitaxial process and the product quality are improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and more specifically to a method for controlling short-range high-purity delivery of semiconductor process gases. Background Technology

[0002] As semiconductor manufacturing processes continue to advance towards advanced process nodes (such as 14nm, 5nm, and even more advanced processes), the requirements for gas purity during the processes are becoming increasingly stringent. In key process steps such as epitaxy (EPI), hydrogen (… ), nitrogen ( ), hydrogen chloride ( ), silane ( ), germane ( Process gases, such as those used in epitaxial layers, not only participate directly in the reaction as reactants or carrier gases, but their purity also directly affects the crystal quality, electrical properties, and final device yield of the epitaxial layer. Therefore, a purity of 9N (99.9999999%) or higher is typically required to avoid adverse effects on device performance from trace contamination such as oxygen, water, metal impurities, and particles. To meet this requirement, current technologies generally involve centralized purification of the gases at the plant level before transporting them to the process equipment within the cleanroom via long-distance pipelines.

[0003] However, existing technologies still have significant shortcomings in practical applications. Because high-purity gases need to be transported through stainless steel pipelines tens or even hundreds of meters long, the gas inevitably comes into continuous contact with the inner wall of the pipeline during long-distance transport. This leads to adsorption and desorption effects, accompanied by the precipitation of trace metal impurities and particle shedding, causing secondary contamination. Consequently, the purity of the gas decreases significantly by the time it reaches the equipment, making it difficult to meet the stringent requirements of advanced processes for extremely low impurity content. Furthermore, long-distance transport increases the gas residence time and contact area, further accumulating the risk of contamination and severely restricting the stable application of ultra-high-purity gases in high-end semiconductor manufacturing.

[0004] The information disclosed in the background section is only intended to enhance the understanding of the background of this disclosure, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0005] The purpose of this invention is to provide a short-range high-purity gas delivery control method for semiconductor processes, in order to solve the problems mentioned in the background art.

[0006] To achieve the above objectives, the present invention provides the following technical solution: a method for controlling short-range high-purity delivery of semiconductor process gases, comprising the following steps: Collect inlet flow rate, inlet pressure and primary purity data of various process gases in semiconductor epitaxial processes, uniformly limit the various process gases to a preset range before they enter the machine, and import them into the corresponding inlet paths to establish consistent input conditions for terminal purification treatment on the machine side. Based on unified input conditions, multiple process gases are introduced into the corresponding purification positions on the machine side, and terminal impurity removal treatment is performed on each gas. The length of each treatment path is limited to within 3 meters to form a terminal purification output state that is close to the use position, and the input conditions are directly transitioned to a high-purity state. The various process gases generated in the terminal purification output state are directly introduced into a conveying path with a length of no more than 2 meters, and the gas residence time is compressed to the second range to reduce the number of times the gas contacts the inner surface of the path and maintain the terminal purification output state without significant attenuation. By continuously and smoothly guiding the gas flow trajectory around the terminal purification output status and short-distance delivery path, the stagnation zone in the flow process is eliminated, and a unidirectional continuous flow mode is maintained, so that the residence time remains stable within a predetermined range, further suppressing the opportunity for impurity release. Following a continuous and smooth flow path, multiple process gases are introduced into the inlet of the reaction chamber via direct connection, and the overall distance between the terminal purification output position and the reaction position is limited to within 2 meters, so that the high-purity state is maintained intact before entering the reaction, realizing full-process control of multi-gas short-range on-site purification.

[0007] Preferably, a unified processing procedure is adopted for various process gases before they enter the machine, which involves synchronously controlling the inlet flow rate, inlet pressure, and primary purity data to form a consistent input state and maintain a continuous transition. The steps are as follows: Collect the inlet flow rates of various process gases and divide the flow rate values ​​of each gas into interval ranges, while recording the time distribution of each interval; The pressure of each gas inlet is continuously adjusted to keep the pressure value within the preset range and maintain the pressure change range within the set range. The primary purity data is processed according to a unified standard, mapping different gas purity values ​​to a unified purity level range; After the flow range division, pressure regulation and purity mapping processes are completed, the various process gases are introduced into the corresponding inlet paths to form consistent input conditions.

[0008] Preferably, for the multi-gas terminal purification process on the machine side, by using multi-path introduction and treatment range control, each gas forms a stable terminal purification output state near the usage location. The steps are as follows: Multiple process gases are guided to their respective purification positions on the machine side, and independent operating paths are divided according to the gas type. At the same time, the inlet positions of each path are sequentially allocated. Terminal impurity removal treatment is performed on each gas, and the gas flow rate changes during the impurity removal process are adjusted in segments. At the same time, the time nodes for gas entering and leaving the purification position are divided into intervals. The running distance in each path is controlled in detail, the length of each gas processing path is limited to within 3 meters, and the length ratio of different sections in the path is allocated accordingly. The system continuously controls the output of various process gases after impurity removal and divides the output rhythm into periods to ensure that the terminal purification output process remains in continuous operation.

[0009] Preferably, in conjunction with the delivery stage after terminal purification output, the length of the delivery path and the running time are controlled in a coordinated manner to maintain the continuous delivery of gas in a high-purity state during the delivery process. The steps are as follows: The purified gas from the terminal is directed into a path of limited length, and the overall length of the path is set numerically. At the same time, the path is divided into segments. The gas travel time within the path is compressed, and the residence time is divided into multiple time periods, each of which is time-controlled. The contact frequency during gas operation is adjusted by controlling the range of operating speed to limit the number of contacts and by classifying the contact frequency for different time periods. The gas flow rhythm in the path is continuously maintained, and the flow rhythm in each time period is uniformly adjusted to ensure that the terminal purification output status maintains consistent operating characteristics during the transportation process.

[0010] Preferably, by combining the segmented interval division of the path with the segmented control process of the running time, the gas running speed in each segmented path is adjusted in intervals, and the running rhythm in different segments is continuously connected. At the same time, the range of contact frequency variation is synchronously constrained to maintain the consistency and continuity of the gas running process in each segmented path, thereby further refining the operation process control in the transportation stage.

[0011] Preferably, based on the gas movement characteristics during short-distance transport, the continuous gas propulsion state is maintained and the probability of stagnation is reduced through flow trajectory guidance and direction control, as follows: Set the gas flow direction and mark the positions of directional changes in the running path to ensure that the gas continues to advance along the preset direction. Adjust local areas in the running path, divide potential stagnation locations into intervals, and independently control the flow status of each interval; Maintaining a consistent gas flow direction and limiting the frequency of directional changes during operation ensures that the flow process remains in a unidirectional continuous state. The time distribution during operation is refined by dividing the dwell time into multiple intervals and controlling them uniformly to maintain a stable time distribution characteristic during operation.

[0012] Preferably, the process of introducing the gas from the terminal purification output to the reaction area, through path connection and distance range control, ensures that the gas remains in a continuously high-purity state before entering the reaction chamber. The steps are as follows: Multiple process gases are guided along a continuous flow path, and the path direction is segmented and calibrated so that the gas gradually approaches the inlet of the reaction chamber. Adjust the distance distribution between the terminal purification location and the reaction location, control the overall spacing within the specified range, and divide it into multiple distance intervals; Maintain the flow rhythm of the gas during operation and uniformly adjust the operating rhythm within different distance ranges; The gas is guided into the inlet of the reaction chamber, and the introduction time is divided into intervals to keep the introduction process running continuously.

[0013] Preferably, for the coordinated operation of multiple process gases, the consistency and continuity of different gases during the transportation process are maintained through multi-path diversion and unified operation rhythm processing, as follows: Different types of gases are divided into operating paths, and the inlets of each path are numbered and sorted so that each gas forms an independent operating path; Unify the operating rhythm in each path and divide the range of rhythm variation into intervals to keep the operating frequency of each gas consistent. Adjust the flow state of various gases and perform range control on the flow differences in different paths to ensure consistency in the operation process of each path; Coordinate the operation of multiple paths and allocate the operation time of each path in a unified manner to keep the multi-gas transport process in a coordinated state.

[0014] Preferably, the entire process of multi-gas purification and transportation is carried out by connecting terminal purification treatment with short-distance transportation, so that the gas is continuously transferred in a high-purity state before entering the reaction area. The steps are as follows: It performs terminal purification treatment of various process gases, and controls the flow rate changes in the purification process in segments, while dividing the treatment time into intervals. The purified gas is guided into a short-range transport path, and the path length is set in intervals. At the same time, the path is segmented. Maintain the flow state during the transportation process and uniformly adjust the operating rhythm in different path segments; The process of coordinating the operation from the terminal purification location to the reaction area is implemented, and the entire process time is segmented and managed to keep the gas in a continuous transfer state.

[0015] The technical effects and advantages provided by the present invention in the above technical solution are as follows: This invention moves the terminal purification treatment position forward to the machine side and limits the overall distance between the terminal purification output position and the reaction position to a small range. This allows various process gases to directly enter the reaction area within a very short path after completing terminal purification, thereby effectively reducing the exposure time and contact process of the gas during transportation, reducing the impact of impurity release on gas purity, and making the gas state entering the reaction area closer to the terminal purification output state, thereby improving the consistency and stability of gas use in the epitaxial process.

[0016] This invention guides the gas flow trajectory smoothly and continuously, maintaining a unidirectional continuous flow mode while compressing the residence time of the gas during the transport process. This prevents the formation of stagnant zones during gas operation, reduces the possibility of impurity accumulation and release in local areas, and maintains continuous high-purity delivery throughout the short-distance transport process. This ensures that various process gases maintain a stable purity level before entering the reaction chamber, which helps improve the quality of the epitaxial layer and enhances the controllability of the process. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this invention. For those skilled in the art, other drawings can be obtained based on these drawings.

[0018] Figure 1 This is a flowchart of the method for controlling short-range high-purity gas delivery in conductor processes according to the present invention. Detailed Implementation

[0019] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, they are provided so that the description of this disclosure will be more complete and fully convey the concept of the exemplary embodiments to those skilled in the art.

[0020] This invention provides, for example Figure 1 The semiconductor process gas short-range high-purity delivery control method shown includes the following steps: Collect inlet flow rate, inlet pressure and primary purity data of various process gases in semiconductor epitaxial processes, uniformly limit the various process gases to a preset range before they enter the machine, and import them into the corresponding inlet paths to establish consistent input conditions for terminal purification treatment on the machine side. To ensure uniform and stable input conditions for various process gases in semiconductor epitaxial processes before they enter the equipment, the gas inlet status is standardized. By acquiring and constraining inlet flow rate, inlet pressure, and primary purity data, a consistent input foundation is established to support continuous subsequent final purification processes. The specific implementation process is as follows: This system collects and processes inlet flow rate, inlet pressure, and primary purity data for various process gases used in semiconductor epitaxy. Before the gases are transported from the plant to the equipment, corresponding acquisition nodes are set for each process gas, ensuring that each gas has an independent and continuous inlet status data record before entering the equipment. By limiting the flow rate range, setting a stable range for the pressure, and applying unified standard constraints to the primary purity data, the system ensures that the various process gases have a controllable input state during spatial transmission. Simultaneously, the collected inlet flow rate, inlet pressure, and primary purity data are synchronously correlated, providing a consistent input judgment basis for different types of process gases before entering the equipment.

[0021] After establishing a unified range for inlet flow rate, inlet pressure, and primary purity data, various process gases are sequentially introduced into the transition path before entering the machine side according to their respective input states. Based on the inlet state data formed in the previous step, the flow state of various process gases before entering the machine side is uniformly adjusted. By continuously converging and controlling the flow rate variation, smoothing and constraining the pressure fluctuation range, and synchronously suppressing the primary purity fluctuation, the various process gases gradually transition to a consistent input range before entering the machine side. This creates an input state with unified parameter characteristics before entering the machine side, providing a standardized prerequisite for subsequent introduction into the corresponding inlet path.

[0022] After multiple process gases reach a unified input state within a specified range, they are introduced into their respective inlet paths according to their gas type. During the introduction process, the constraints of inlet flow rate, inlet pressure, and primary purity data are maintained to ensure that the process gases in their respective inlet paths maintain input characteristics consistent with the unified specified range. By independently controlling the flow distribution of different gases during the introduction into their respective inlet paths, continuously maintaining the pressure, and synchronously maintaining the primary purity, the multiple process gases maintain the unified input state established in the previous step when entering their respective inlet paths, and form a stable and continuous flow process within the corresponding inlet paths.

[0023] Based on the premise that multiple process gases enter their respective inlet paths and maintain a unified input state, the process gases in their respective inlet paths are guided to the terminal purification treatment position on the machine side. The inlet flow rate, inlet pressure, and primary purity data are used as the input basis for the terminal purification treatment and are continuously controlled. This ensures that the multiple process gases received at the terminal purification treatment position on the machine side maintain consistent input characteristics at the parameter level, thereby establishing unified input conditions. This allows the terminal purification treatment process to operate continuously under the same input boundaries, ensuring that multiple process gases have a stable and consistent initial state when entering the terminal purification treatment position on the machine side.

[0024] Based on unified input conditions, multiple process gases are introduced into the corresponding purification positions on the machine side, and terminal impurity removal treatment is performed on each gas. The length of each treatment path is limited to within 3 meters to form a terminal purification output state that is close to the use position, and the input conditions are directly transitioned to a high-purity state. To reduce the probability of impurity introduction during long-distance transport of various process gases in semiconductor epitaxial processes, a terminal purification process is established at the equipment side. By shortening the processing path length and limiting the distance between the terminal purification location and the usage location, the various process gases are kept in a stable, high-purity state before entering the reaction zone. The specific implementation process is as follows: Based on unified input conditions, various process gases are introduced into corresponding purification positions on the machine side, and corresponding terminal impurity removal processes are established for different types of process gases. This ensures that hydrogen, nitrogen, hydrogen chloride, silane, and germane run along independent paths after entering the machine side. At the same time, based on the inlet flow rate, inlet pressure, and primary purity data in the unified input conditions, the gas operating state in their respective purification positions is continuously limited. By maintaining a consistent input range for various process gases when entering their corresponding purification positions, a unified and continuous terminal purification starting state is formed near the usage position for multiple process gases, reducing the disturbance to the gas state caused by the long-distance transportation process from the plant to the machine side.

[0025] Around the initial state of terminal purification, terminal impurity removal treatment is performed on each gas stream. By continuously removing oxygen, moisture, and metal impurities, a continuous purification process is formed after multiple process gases enter the terminal purification treatment location. By limiting the operating range of the gas within the terminal purification location, different types of process gases maintain a continuous flow state during the purification process. At the same time, based on the inlet pressure range formed in the unified input conditions, the flow rhythm in the terminal impurity removal process is synchronously constrained, so that the terminal impurity removal process maintains a consistent correspondence with the unified input conditions. This allows multiple process gases to gradually reach a stable high-purity state during the terminal purification treatment process, and reduces the state fluctuation of the gas during the terminal purification treatment process.

[0026] Relying on a stable high-purity state, the processing path length for each gas stream is limited to within 3 meters. By uniformly constraining the operating distance between the corresponding purification position and the usage position on the machine side, multiple process gases can directly enter the short-distance operation process after the terminal impurity removal treatment. At the same time, based on the gas flow rhythm in the stable high-purity state, the operating time of each gas stream within the 3-meter range is synchronously controlled, so that multiple process gases form a continuous and rapid delivery process after terminal purification treatment. This reduces the chance of impurities being introduced due to gas contact with the external environment and maintains the stable high-purity state formed by terminal purification treatment during the short-distance operation.

[0027] The continuous operation process within a 3-meter radius guides various process gases to the output area adjacent to the usage location, maintaining a fixed correspondence between the terminal purification output location and the reaction area. This allows the terminal purification output state to transition directly from a unified input condition to a high-purity state. Simultaneously, by maintaining the continuous operation rhythm of various process gases in the output area, the high-purity state formed by the terminal purification process remains stable and continuous before entering the reaction area. This achieves the terminal purification operation process of various process gases at the machine side and reduces the secondary pollution impact generated during long-distance transportation.

[0028] The various process gases generated in the terminal purification output state are directly introduced into a conveying path with a length of no more than 2 meters, and the gas residence time is compressed to the second range to reduce the number of times the gas contacts the inner surface of the path and maintain the terminal purification output state without significant attenuation. To reduce the probability of secondary contamination of various process gases after final purification in semiconductor epitaxial processes, a short-distance transport process is established between the final purification location on the machine side and the reaction area. By limiting the transport path length and the residence time of compressed gases, the final purified output state remains continuous and stable before entering the reaction area, thereby avoiding purity degradation during long-distance operation. The specific implementation process is as follows: Multiple process gases generated from the terminal purification output are directly introduced into a conveying path no longer than 2 meters. Based on the gas flow rate, gas pressure, and gas purity range in the terminal purification output state, the running rhythm of the multiple process gases as they enter the conveying path is uniformly limited, ensuring that hydrogen, nitrogen, hydrogen chloride, silane, and germane maintain a continuous flow state after entering the conveying path. At the same time, by reducing the spatial distance between the terminal purification output position and the reaction area, the multiple process gases directly enter a short-distance running process after leaving the terminal purification position, thereby reducing the chance of external contact of the gases during the conveying stage and maintaining the stability of the terminal purification output state at the beginning of the conveying stage.

[0029] The residence time of various process gases during operation is compressed and controlled within a transport path of no more than 2 meters in length. By limiting the time range for the gas to travel from the terminal purification output position to the inlet position of the reaction zone, the overall residence time of various process gases in the transport path is kept within the range of seconds. At the same time, the running speed of the gas in the transport path is synchronously constrained according to the continuous flow rhythm in the terminal purification output state, so that different types of process gases maintain a consistent operating state during the transport process. By compressing the residence time, the chance of state changes of the gas during operation is reduced, thereby maintaining the continuous stability of the terminal purification output state in the transport stage.

[0030] By utilizing residence times within the second range, the contact process of various process gases in the transport path is continuously limited. By controlling the number of times the gas contacts the inner surface of the path during operation, the contact frequency of various process gases in the transport stage is kept within a limited range. At the same time, combined with the high-purity operating conditions in the terminal purification output state, the flow process of the gas in the transport path is continuously maintained, ensuring that hydrogen, nitrogen, hydrogen chloride, silane, and germane maintain a uniform high-purity state before entering the reaction area, and reducing the chance of impurities being released due to contact during operation, thereby reducing the secondary pollution impact that is prone to occur during long-distance transport.

[0031] By focusing on the continuous operation process after the number of contact is limited, multiple process gases are directly guided to the inlet of the reaction zone along a transport path with a length not exceeding 2 meters. By maintaining a residence time within a second range and a continuous flow rhythm, the purity of the terminal purification output does not fluctuate before entering the reaction zone. At the same time, by maintaining a fixed distance between the terminal purification output position and the inlet of the reaction zone, multiple process gases can quickly enter the reaction zone after leaving the terminal purification position. This achieves continuous maintenance of high purity during short-distance transport on the machine side and reduces the probability of gas purity decay in semiconductor epitaxial processes.

[0032] By continuously and smoothly guiding the gas flow trajectory around the terminal purification output status and short-distance delivery path, the stagnation zone in the flow process is eliminated, and a unidirectional continuous flow mode is maintained, so that the residence time remains stable within a predetermined range, further suppressing the opportunity for impurity release. To reduce the probability of contamination due to stagnation of various process gases during short-range transport in semiconductor epitaxial processes, continuous and smooth control is implemented between the final purified output state and the short-range transport path. This is achieved by limiting stagnation zones during gas flow and maintaining unidirectional continuous flow, ensuring that various process gases remain in a stable, high-purity state before entering the reaction zone and reducing the chance of impurities being released during operation. The specific implementation process is as follows: By continuously and smoothly guiding the flow trajectories of various process gases around the terminal purification output state and the short-range transport path, the running directions of hydrogen, nitrogen, hydrogen chloride, silane, and germane in the short-range transport path are uniformly defined, ensuring that the various process gases run continuously in a fixed direction after leaving the terminal purification output position. At the same time, based on the flow rate range and residence time range in the terminal purification output state, the running rhythm of the gases in the short-range transport path is synchronously controlled, so that the various process gases form a continuous propulsion state during operation and reduce the chance of stagnation caused by changes in running direction, thereby maintaining the stability and continuity of the terminal purification output state in the short-range transport stage.

[0033] By relying on the continuous and smooth guiding of the operating rhythm, the stagnation zone in the flow process is restricted. By controlling the continuity of the operation of various process gases in the short-distance transport path, the gas is kept in a continuous propulsion state during operation. At the same time, based on the continuous flow conditions in the terminal purification output state, the dwell time of the gas in the short-distance transport path is compressed, so that hydrogen, nitrogen, hydrogen chloride, silane and germane do not form local stagnation states during operation. By reducing the contact accumulation opportunities in the stagnation area, the probability of impurity aggregation during operation is reduced, thereby keeping the terminal purification output state stable during the short-distance transport process.

[0034] By maintaining a continuous flow pattern for various process gases after the stagnation zone is restricted, the gas flow direction is kept unidirectional and continuous. By continuously limiting the gas flow sequence in the short-range transport path, the various process gases always flow in the same direction before entering the reaction zone. At the same time, based on the running rhythm formed by continuous smooth guidance, the running frequency of the gas in the short-range transport path is continuously maintained, so that different types of process gases form a continuous and stable propulsion process during operation. By maintaining a unidirectional continuous flow pattern, the chance of reverse stagnation during operation is reduced, thereby further maintaining the continuous and stable state of the terminal purification output.

[0035] By relying on the stable propulsion process formed by unidirectional continuous flow, the residence time is kept stable within a predetermined range. The operation of various process gases is continuously maintained around the stable residence time. By controlling the travel time of hydrogen, nitrogen, hydrogen chloride, silane, and germane in the short-range transport path to keep them within a consistent range, the various process gases are kept in a uniform high-purity state before entering the reaction area. At the same time, by reducing the continuous contact between the gases and the inner surface of the path during operation, the chance of impurity release is further suppressed, thereby reducing the secondary pollution caused by stagnation in semiconductor epitaxial processes.

[0036] Following a continuous and smooth flow path, multiple process gases are introduced into the inlet of the reaction chamber in a direct connection manner, and the overall distance between the terminal purification output position and the reaction position is limited to within 2 meters, so that the high-purity state is kept intact before entering the reaction, realizing full-process control of multi-gas short-range on-site purification. To maintain the high purity of various process gases in semiconductor epitaxial processes before entering the reaction region, short-range direct introduction control is implemented on the flow path after continuous and smooth guidance. By limiting the overall distance between the terminal purification output position and the reaction position and maintaining continuous propagation, the external contact opportunities of various process gases are reduced before entering the reaction region, thereby achieving full-process control of short-range on-site purification of multiple gases. The specific implementation process is as follows: Following a continuously smoothed flow path, multiple process gases are directly introduced into the inlet of the reaction chamber. By unifying and continuing the flow direction of hydrogen, nitrogen, hydrogen chloride, silane, and germane after continuous smoothing, the multiple process gases continue to advance along a fixed flow direction after leaving the terminal purification output position. At the same time, based on the continuous flow rhythm formed by continuous smoothing, the operating state of the multiple process gases before entering the reaction chamber inlet position is synchronously maintained, ensuring that the multiple process gases maintain a continuous operating state during the introduction of the reaction chamber inlet position and reducing the chance of stagnation during operation, thereby maintaining a stable and continuous terminal purification output state during the introduction phase.

[0037] By relying on the continuous propulsion process formed by direct connection, the overall distance between the terminal purification output position and the reaction position is limited to within 2 meters. By uniformly constraining the operating range between the terminal purification output position and the reaction position, multiple process gases can directly enter the inlet of the reaction chamber after leaving the terminal purification output position. At the same time, based on the flow rhythm after continuous and smooth guidance, the operating time of multiple process gases within the 2-meter range is continuously compressed, so that hydrogen, nitrogen, hydrogen chloride, silane, and germane maintain a continuous propulsion state during operation. By reducing the operating distance between the terminal purification output position and the reaction position, the chance of contact accumulation of multiple process gases during the introduction process is reduced, thereby reducing the probability of gas purity fluctuations.

[0038] The continuous propulsion state formed within a 2-meter range ensures that the high-purity state remains intact before entering the reaction. By continuously maintaining the flow and pressure changes of various process gases during operation, the high-purity operating conditions in the terminal purification output state remain stable during the introduction into the reaction chamber inlet. At the same time, based on the continuously smooth guided running direction, the flow trajectory of various process gases before entering the reaction chamber inlet is continuously limited, ensuring that the various process gases maintain a uniform operating state during the entry into the reaction area. Furthermore, by maintaining a continuous propulsion rhythm, the chance of impurities being released during operation is reduced, thereby ensuring that the high-purity state remains continuously stable before entering the reaction.

[0039] By relying on the continuous operation process after maintaining a high-purity state, the entire process of short-range on-site purification of multiple gases is controlled. Through unified and continuous control of the operation of hydrogen, nitrogen, hydrogen chloride, silane, and germane from the terminal purification output position to the reaction chamber inlet position, the multiple process gases are kept in a continuous flow state before entering the reaction area. At the same time, by maintaining a fixed correspondence of less than 2 meters between the terminal purification output position and the reaction position, the multiple process gases can quickly enter the reaction area after leaving the terminal purification output position, thereby reducing the secondary pollution impact generated during long-distance transportation and realizing the entire process of short-range on-site purification of multiple gases in semiconductor epitaxial processes.

[0040] This invention moves the terminal purification treatment position forward to the machine side and limits the overall distance between the terminal purification output position and the reaction position to a small range. This allows various process gases to directly enter the reaction area within a very short path after completing terminal purification, thereby effectively reducing the exposure time and contact process of the gas during transportation, reducing the impact of impurity release on gas purity, and making the gas state entering the reaction area closer to the terminal purification output state, thereby improving the consistency and stability of gas use in the epitaxial process.

[0041] This invention guides the gas flow trajectory smoothly and continuously, maintaining a unidirectional continuous flow mode while compressing the residence time of the gas during the transport process. This prevents the formation of stagnant zones during gas operation, reduces the possibility of impurity accumulation and release in local areas, and maintains continuous high-purity delivery throughout the short-distance transport process. This ensures that various process gases maintain a stable purity level before entering the reaction chamber, which helps improve the quality of the epitaxial layer and enhances the controllability of the process.

[0042] The foregoing has only described certain exemplary embodiments of the present invention by way of illustration. Undoubtedly, those skilled in the art can modify the described embodiments in various ways without departing from the spirit and scope of the present invention. Therefore, the foregoing drawings and descriptions are illustrative in nature and should not be construed as limiting the scope of protection of the claims of the present invention.

Claims

1. A method for controlling short-range high-purity gas delivery in semiconductor processes, characterized in that, Includes the following steps: Collect inlet flow rate, inlet pressure and primary purity data of various process gases in semiconductor epitaxial processes, uniformly limit the various process gases to a preset range before they enter the machine, and import them into the corresponding inlet paths to establish consistent input conditions for terminal purification treatment on the machine side. Based on unified input conditions, multiple process gases are introduced into the corresponding purification positions on the machine side, and terminal impurity removal treatment is performed on each gas. The length of each treatment path is limited to within 3 meters to form a terminal purification output state that is close to the use position, and the input conditions are directly transitioned to a high-purity state. The various process gases generated in the terminal purification output state are directly introduced into a conveying path with a length of no more than 2 meters, and the gas residence time is compressed to the second range to reduce the number of times the gas comes into contact with the inner surface of the path. Based on the terminal purification output status and short-distance delivery path, the gas flow trajectory is continuously and smoothly guided to eliminate stagnation intervals in the flow process and maintain a unidirectional continuous flow mode, so that the residence time remains stable within a predetermined range. Following a continuous and smooth flow path, multiple process gases are introduced into the inlet of the reaction chamber via direct connection, and the overall distance between the terminal purification output position and the reaction position is limited to within 2 meters.

2. The method for controlling short-range high-purity delivery of semiconductor process gases according to claim 1, characterized in that, A unified processing procedure is implemented for various process gases before they enter the machine. This involves synchronously controlling inlet flow rate, inlet pressure, and primary purity data to achieve a consistent input state and maintain a continuous transition. The steps are as follows: Collect the inlet flow rates of various process gases and divide the flow rate values ​​of each gas into interval ranges, while recording the time distribution of each interval; The pressure at each gas inlet is continuously adjusted to keep the pressure value within a preset range and maintain the pressure change range within a set range. The primary purity data is processed according to a unified standard, mapping different gas purity values ​​to a unified purity level range; After the flow range division, pressure regulation and purity mapping processes are completed, the various process gases are introduced into the corresponding inlet paths to form consistent input conditions.

3. The method for controlling short-range high-purity delivery of semiconductor process gases according to claim 2, characterized in that, For the multi-gas terminal purification process on the machine side, by using multi-path introduction and treatment range control, each gas can form a stable terminal purification output state near the usage location. The steps are as follows: Multiple process gases are guided to enter the corresponding purification positions on the machine side, and independent operating paths are divided according to the gas type. At the same time, the inlet positions of each path are sequentially allocated. Terminal impurity removal treatment is performed on each gas, and the gas flow rate changes during the impurity removal process are adjusted in segments. At the same time, the time nodes for gas to enter and leave the purification position are divided into intervals. The running distance in each path is controlled in detail, the length of each gas processing path is limited to within 3 meters, and the length ratio of different sections in the path is allocated accordingly. The system continuously controls the output of various process gases after impurity removal and divides the output rhythm into periods to ensure that the terminal purification output process remains in continuous operation.

4. The method for controlling short-range high-purity delivery of semiconductor process gases according to claim 3, characterized in that, In conjunction with the delivery stage after terminal purification output, the length of the delivery path and the running time are coordinated and controlled to maintain the continuous high-purity gas delivery during the process. The steps are as follows: The purified gas from the terminal is directed into a path of limited length, and the overall length of the path is set numerically. At the same time, the path is divided into segments. The gas travel time within the path is compressed, and the residence time is divided into multiple time periods, each of which is time-controlled. The contact frequency during gas operation is adjusted by controlling the range of operating speed to limit the number of contacts and by classifying the contact frequency for different time periods. The gas flow rhythm in the path is continuously maintained, and the flow rhythm in each time period is uniformly adjusted to ensure that the terminal purification output status maintains consistent operating characteristics during the transportation process.

5. The method for controlling short-range high-purity delivery of semiconductor process gases according to claim 4, characterized in that, By combining the segmented path division and the segmented operation time control process, the gas running speed in each segment path is adjusted in intervals, and the running rhythm in different segments is continuously connected. At the same time, the range of contact frequency variation is synchronously constrained.

6. The method for controlling short-range high-purity delivery of semiconductor process gases according to claim 5, characterized in that, Based on the gas movement characteristics in short-distance transport processes, the continuous gas propulsion state is maintained and the probability of stagnation is reduced through flow trajectory guidance and direction control. The steps are as follows: Set the gas flow direction and mark the positions of directional changes in the running path to ensure that the gas continues to advance along the preset direction. Adjust local areas in the running path, divide potential stagnation locations into intervals, and independently control the flow status of each interval; Maintaining a consistent gas flow direction and limiting the frequency of directional changes during operation ensures that the flow process remains in a unidirectional continuous state. The time distribution during operation is refined by dividing the dwell time into multiple intervals and controlling them uniformly to maintain a stable time distribution characteristic during operation.

7. The method for controlling short-range high-purity delivery of semiconductor process gases according to claim 6, characterized in that, The process of introducing the gas from the terminal purification output to the reaction area, through path connection and distance range control, ensures that the gas remains in a continuously high-purity state before entering the reaction chamber. The steps are as follows: Multiple process gases are guided along a continuous flow path, and the path direction is segmented and calibrated so that the gas gradually approaches the inlet of the reaction chamber. Adjust the distance distribution between the terminal purification location and the reaction location, control the overall spacing within the specified range, and divide it into multiple distance intervals; Maintain the flow rhythm of the gas during operation and uniformly adjust the operating rhythm within different distance ranges; The gas is guided into the inlet of the reaction chamber, and the introduction time is divided into intervals to keep the introduction process running continuously.

8. The method for controlling short-range high-purity delivery of semiconductor process gases according to claim 7, characterized in that, For the coordinated operation of multiple process gases, the consistency and continuity of different gases during transportation are maintained through multi-path diversion and unified operation rhythm. The steps are as follows: Different types of gases are divided into operating paths, and the inlets of each path are numbered and sorted so that each gas forms an independent operating path; Unify the operating rhythm in each path and divide the range of rhythm variation into intervals to keep the operating frequency of each gas consistent. Adjust the flow state of various gases and perform range control on the flow differences in different paths to ensure consistency in the operation process of each path; Coordinate the operation of multiple paths and allocate the operation time of each path in a unified manner to keep the multi-gas transport process in a coordinated state.

9. The method for controlling short-range high-purity delivery of semiconductor process gases according to claim 1, characterized in that, The entire process of multi-gas purification and transportation is addressed by connecting terminal purification treatment with short-distance transportation to ensure that the gases are continuously transported in a high-purity state before entering the reaction zone. The steps are as follows: It performs terminal purification treatment of various process gases, and controls the flow rate changes in the purification process in segments, while dividing the treatment time into intervals. The purified gas is guided into a short-range transport path, and the path length is set in intervals. At the same time, the path is segmented. Maintain the flow state during the transportation process and uniformly adjust the operating rhythm in different path sections; The process of coordinating the operation from the terminal purification location to the reaction area is implemented, and the entire process time is segmented and managed to keep the gas in a continuous transfer state.

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