A method and system for measuring etch depth of a metal heat spreading product

Abstract

The application discloses a kind of etching depth measurement method and system of metal heat dissipation product, it is related to precision measurement technical field.The method comprises the following steps: according to the layout of etching process of metal heat dissipation product, determine multiple measurement regions, each measurement region corresponds the boundary between one etching area and non-etching area;For each measurement region, first measurement point on the side of non-etching area and second measurement point on the side of etching area are selected on the two sides of the boundary;Etching depth of the corresponding measurement region is obtained based on the first measurement point and the second measurement point corresponding metal surface height.By using the present application, multiple measurement regions are positioned, key process areas are covered, invalid redundant measurement is reduced, and measurement accuracy and result reliability are improved.

Description

Technical Field

[0001] This application relates to the field of precision measurement technology, specifically to a method and system for measuring the etching depth of a metal heat dissipation product. Background Technology

[0002] Metal heat sinks are core components of electronic product cooling systems, widely used in various electronic devices such as mobile phones, computers, and servers. Due to differences in heat output and spatial layout within different areas of electronic devices, the heat dissipation performance requirements for different areas of the heat sink also vary. To optimize the overall heat dissipation efficiency of the heat sink, it is typically necessary to process different forms of heat dissipation structures, such as fins, grooves, and micropores, on the metal surface through a multi-stage, zoned etching process.

[0003] In multi-stage etching processes, areas that do not require etching must be pre-coated with an etching-resistant ink to protect the metal surface from corrosion by the etching solution. After etching, precise control of the etching depth is crucial. However, existing technologies lack a method for measuring etching depth that balances efficiency, accuracy, and non-destructiveness. Summary of the Invention

[0004] This application provides a method and system for measuring the etching depth of metal heat dissipation products, which solves the problem that there is a lack of etching depth measurement methods in the prior art that can balance efficiency, accuracy and non-destructiveness.

[0005] In a first aspect, this application provides a method for measuring the etching depth of a metal heat dissipation product, the method comprising: Based on the etching process layout of the metal heat dissipation product, multiple process zones are determined, and at least one measurement area is determined within each process zone. Each measurement area corresponds to the boundary between an etched area and a non-etched area. For each measurement area, a first measurement point located on the non-etched area side and a second measurement point located on the etched area side are selected on both sides of the boundary. By using infrared interferometry, the interference spectral signals corresponding to the first and second measurement points are obtained respectively, and the height of the first and second metal surfaces is calculated based on the peak characteristics of the metal surface in the interference spectral signals. The etching depth of the corresponding measurement area is calculated based on the height of the first metal surface and the height of the second metal surface.

[0006] By adopting the above technical solution, multiple measurement areas are located, covering key process areas, reducing invalid and redundant measurements; eliminating the influence of ink thickness fluctuations and substrate flatness errors, and improving measurement accuracy and result reliability.

[0007] In one specific implementation scheme, based on the etching process layout of the metal heat dissipation product, multiple process zones are determined, and at least one measurement area is determined within each process zone, specifically including: Based on the distribution characteristics of the non-etched area in the etching process layout, the metal heat dissipation product is divided into multiple process zones. For each process zone, the shape, distribution density, and arrangement direction of the corresponding non-etched area are obtained. Among them, each non-etched area in the same process zone satisfies the following: the aspect ratio deviation of the shape is less than the threshold of the first zone, the difference rate of the distribution density is less than the threshold of the second zone, and the included angle of the main axis of the arrangement direction is less than the threshold of the third zone. Based on the shape, determine a layout pattern that matches the contour shape of the non-etched area to generate candidate boundaries; Determine the grid sampling interval based on the distribution density; Determine the layout path direction of the measurement points based on the arrangement direction, so that the measurement path intersects with the arrangement direction; Along the deployment path, based on the grid sampling interval, candidate boundaries are sampled, and one or more of the sampled boundaries are determined as the boundaries corresponding to the measurement areas within the process partition.

[0008] By adopting the above technical solution, the layout mode, sampling interval and measurement path of the measurement points are adaptively determined according to the geometric characteristics of the non-etched area, so as to achieve uniform and reasonable layout of the measurement points, reduce redundant measurements while ensuring measurement accuracy, avoid missing detection in key areas, and significantly improve the efficiency of batch measurement.

[0009] In a specific feasible implementation, a first measurement point located on the non-etched area side and a second measurement point located on the etched area side are selected on both sides of the boundary, specifically including: Obtain a reference benchmark near the boundary, which includes the boundary itself and structural feature points inside the etched area; When the reference datum is the boundary itself, starting from the reference datum, offset by a first preset distance and a second preset distance to the non-etched area side and the etched area side respectively to obtain the first measurement point and the second measurement point; When the reference point is a structural feature point inside the etched area, the structural feature point is used as the first measurement point, and the second measurement point is obtained by shifting the reference point to one side of the etched area by a third preset distance.

[0010] By adopting the above technical solution, a point-taking method adapted to different etched structures is provided. The optimal reference benchmark is automatically selected based on the structural features near the boundary, which effectively improves the point-taking accuracy and makes the method applicable to various etched structure scenarios, such as regular and irregular ones.

[0011] In one specific implementation, the non-etched area includes an ink surface and a metal surface, and the etched area includes a metal surface; calculating the height of the first metal surface and the height of the second metal surface specifically includes: The infrared interferometer is controlled to emit broadband infrared light, which is then irradiated onto the first and second measurement points, respectively. Receive a first interference spectrum signal reflected from a first measurement point and a second interference spectrum signal reflected from a second measurement point; wherein the first interference spectrum signal corresponds to the metal surface and the ink surface at the first measurement point, and the second interference spectrum signal corresponds to the metal surface at the second measurement point; Based on the first and second interference spectral signals, corresponding feature maps are drawn respectively; Based on each feature map, the corresponding wave peak features of the metal surface are identified and extracted respectively; Based on the wave peak characteristics of each metal surface, the height of the first metal surface and the height of the second metal surface are calculated respectively.

[0012] By adopting the above technical solution and utilizing the ink penetration characteristics of broadband infrared light, the peak signals of the metal surface in the non-etched area and the etched area are extracted respectively, so as to realize the direct measurement of the absolute height of the metal substrate in the ink state. The measurement process does not damage the product surface and is suitable for online inspection in mass production.

[0013] In one specific feasible implementation, the method further includes: Based on the characteristic spectrum of the first interference spectrum signal, the ratio between the signal intensity of the metal surface peak and the signal intensity of the ink surface peak, as well as the signal-to-noise ratio of the metal surface peak, are calculated. If the ratio is higher than the preset first ratio threshold and the signal-to-noise ratio is higher than the preset first signal-to-noise ratio threshold, then the measurement result of the current measurement area is marked as high confidence and the etching depth is output. If the ratio is between the preset second ratio threshold and the first ratio threshold, and the signal-to-noise ratio is higher than the first signal-to-noise ratio threshold, then the measurement result of the current measurement area is marked as medium confidence, and repeated measurement is triggered; During repeated measurements, when the range of the etching depth of N consecutive measurements is less than a preset dispersion threshold, the measurement is stopped, the measurement result is determined to be stable, and the average value of the etching depth of the N measurements is taken as the final output; when the total number of repeated measurements reaches a preset maximum number threshold, and the range of the etching depth is still greater than or equal to the dispersion threshold, the measurement is stopped, the measurement result of the current measurement area is determined to be interfered with, the confidence level of the measurement result is downgraded, and an alarm signal is output. If the ratio is lower than the second ratio threshold or the signal-to-noise ratio is lower than the first signal-to-noise ratio threshold, the measurement result of the current measurement area is determined to be unreliable, and an alarm signal is output.

[0014] By adopting the above technical solution, the confidence level of the measurement results is automatically evaluated based on the peak intensity ratio and signal-to-noise ratio. Different processing strategies are adopted for results with different confidence levels, effectively filtering unreliable data and improving the credibility and stability of the measurement data.

[0015] In one specific feasible implementation, the method further includes: When the measurement results are marked as medium confidence or unreliable, the optical path difference between the ink surface peak and the metal surface peak is calculated based on the characteristic spectrum of the first interference spectrum signal. The ink thickness measurement value is obtained based on the optical path difference between the ink surface peak and the metal surface peak and the preset ink refractive index; Based on the optical path difference coordinates of the ink surface peaks on the characteristic spectrum and the ink thickness measurement, the theoretical optical path difference coordinates of the metal surface peaks on the characteristic spectrum are calculated, and the height of the first metal surface is recalculated based on the theoretical optical path difference coordinates.

[0016] By adopting the above technical solution, peak enhancement processing can be triggered when the peak signal on the metal surface is weak. The position of the peak on the metal surface can be inferred from the stable signal of the peak on the ink surface, solving the problem of difficult identification of metal peaks under low-penetration inks and expanding the applicability of the method.

[0017] In one specific feasible implementation, the method further includes: Based on the heat dissipation requirements and etching structure density of each measurement area in the metal heat dissipation product, the weighting coefficients corresponding to each of the multiple measurement areas are obtained. Obtain the historical deviation values ​​of the etching depth of each measurement area in each batch of measurements; When the historical deviation value is higher than the first stability threshold, the weighting coefficient is reduced. When the historical deviation value is lower than the second stability threshold, the weighting coefficient is increased; The etching deviation index of the metal heat dissipation product is obtained by weighted summation of the etching depth at each measurement area. If the etching deviation index is lower than the preset deviation threshold, a product qualification signal is output. If the etching deviation index is greater than or equal to the preset deviation threshold, a product failure signal is output, and at least one measurement area that contributes the most to the etching deviation index is marked.

[0018] By adopting the above technical solutions, dynamic weighted evaluation based on heat dissipation requirements and process stability can be achieved, which can scientifically quantify the overall etching quality of the product, make the quality judgment results more in line with the actual heat dissipation performance requirements of the product, and improve the accuracy and rationality of the judgment of non-conforming products.

[0019] A second aspect of this application provides an etching depth measurement system for metal heat dissipation products, the system comprising: The measurement area determination module is used to determine multiple process partitions based on the etching process layout of the metal heat dissipation product, and to determine at least one measurement area within each process partition. Each measurement area corresponds to the boundary between an etched area and a non-etched area. The measurement point selection module is used to select a first measurement point on the non-etched area side and a second measurement point on the etched area side for each measurement region, respectively, on both sides of the boundary. The spectrum acquisition module is used to control the infrared interferometer to emit broadband infrared light, which is then irradiated at the first and second measurement points, respectively, and to receive the corresponding interference spectrum signals. The peak extraction module is used to process the interference spectrum signal, draw feature maps, and identify and extract the peak features of the metal surface. The etching depth calculation module is used to calculate the height of the first metal surface and the height of the second metal surface based on the wave peak characteristics of the metal surface, so as to obtain the etching depth of the corresponding measurement area.

[0020] A third aspect of this application provides an electronic device, comprising: a processor and a memory; wherein the memory stores a computer program adapted to be loaded by the processor and to execute the above-described method steps.

[0021] A fourth aspect of this application provides a computer storage medium storing a plurality of instructions adapted for loading by a processor and executing the method steps described above. Attached Figure Description

[0022] Figure 1 This is a flowchart illustrating a method for measuring the etching depth of a metal heat dissipation product according to an embodiment of this application.

[0023] Figure 2 This is a schematic diagram of the selection of a measurement area provided in an embodiment of this application.

[0024] Figure 3 This is a schematic diagram of the selection of measurement points provided in an embodiment of this application.

[0025] Figure 4 This is another schematic diagram illustrating the selection of a measurement point provided in an embodiment of this application.

[0026] Figure 5 This is a schematic diagram of the peaks in a non-etched area provided in an embodiment of this application.

[0027] Figure 6 This is a schematic diagram of the peak of an etched area provided in an embodiment of this application.

[0028] Figure 7This is a schematic diagram of a module of an etching depth measurement system for a metal heat dissipation product provided in an embodiment of this application. Detailed Implementation

[0029] To enable those skilled in the art to better understand the technical solutions in this specification, the technical solutions in the embodiments of this specification will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.

[0030] In the description of the embodiments of this application, the words "for example" or "for instance" are used to indicate examples, illustrations, or explanations. Any embodiment or design that is described as "for example" or "for instance" in the embodiments of this application should not be construed as being more preferred or advantageous than other embodiments or design options. Rather, the use of the words "for example" or "for instance" is intended to present the relevant concepts in a specific manner.

[0031] In the description of the embodiments of this application, the term "multiple" means two or more. For example, multiple systems means two or more systems, and multiple screen terminals means two or more screen terminals. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. The terms "comprising," "including," "having," and variations thereof all mean "including but not limited to," unless otherwise specifically emphasized.

[0032] This application provides a method for measuring the etching depth of a metal heat sink product, applied to an infrared interferometric measurement system. The system includes an infrared interferometer, a ranging sensor probe, a controller, and a measurement platform. The infrared interferometer emits broadband infrared light and receives the reflected interference spectrum signal. The ranging sensor probe integrates a reference mirror to separate the incident light into a reference beam and a measurement beam. The controller processes the spectral data and calculates the etching depth. The measurement platform fixes the metal heat sink product under test and enables three-dimensional movement.

[0033] Please refer to Figure 1 A flowchart illustrating a method for measuring the etching depth of metal heat sink products is presented. This method can be implemented using a computer program, a microcontroller, or run on an etching depth measurement system for metal heat sink products. The computer program can be integrated into a computer device or run as a standalone application. Specifically, the method includes steps S100 to S400, as follows: S100. Based on the etching process layout of the metal heat dissipation product, determine multiple process zones, and determine at least one measurement area within each process zone. Each measurement area corresponds to the boundary between an etched area and a non-etched area.

[0034] Etching process layout refers to the pre-designed distribution pattern of etched and non-etched areas on the surface of a metal heat sink product, typically stored as data from a multi-stage, zoned etching mask. Etched areas are those where some metal is removed through the etching process; after etching, the surface is uncovered by ink, directly exposing the metal substrate. Non-etched areas are those protected by etch-resistant ink and remain uncorroded; after etching, the surface is still covered with etch-resistant ink, preserving the original height of the metal substrate. The boundary refers to the interface between etched and non-etched areas, also known as the edge of an etch step.

[0035] Before actual measurement, the metal heat sink under test is fixed on the measurement platform. The controller imports the corresponding multi-segment etching data for the product, identifies the contours of all etched and non-etched areas, and then determines the boundaries between all etched and non-etched areas. Each boundary corresponds to a potential measurement area.

[0036] refer to Figure 2 Based on the above embodiments, as another optional embodiment, multiple measurement areas are determined according to the etching process layout of the metal heat dissipation product, specifically including: S101. Based on the distribution characteristics of the non-etched area in the etching process layout, the metal heat dissipation product is divided into multiple process zones. For each process zone, the shape, distribution density, and arrangement direction of the corresponding non-etched area are obtained. Among them, each non-etched area in the same process zone satisfies the following: the aspect ratio deviation of the shape is less than the threshold of the first zone, the difference rate of the distribution density is less than the threshold of the second zone, and the included angle of the main axis of the arrangement direction is less than the threshold of the third zone.

[0037] The controller performs image analysis on the imported etching process layout data, extracting the geometric features of each non-etched area. Shape features include the outer contour type of the non-etched area, such as circular, rectangular, elongated, or irregular polygonal shapes. Distribution density refers to the number of non-etched areas per unit area, measured in units per square centimeter. Arrangement direction refers to the overall extension direction of the non-etched area array, such as horizontal, vertical, or diagonal directions.

[0038] When dividing the process into zones, the controller follows the principle of geometric feature quantification consistency. Specifically, each non-etched zone within the same process zone must meet the following quantification conditions: the aspect ratio deviation of the outline shape of each non-etched zone is less than the first zone threshold; the difference rate of the distribution density of each non-etched zone is less than the second zone threshold; and the included angle of the main axes of the arrangement direction of each non-etched zone is less than the third zone threshold. Here, aspect ratio deviation refers to the difference between the maximum and minimum aspect ratios within the zone; the difference rate of distribution density refers to the proportion of the difference between the maximum and minimum number of non-etched zones within the zone to the average value; and the included angle of the main axes refers to the maximum included angle between the main axes of the arrangement direction of each non-etched zone.

[0039] By dividing the process into zones using the aforementioned quantitative conditions, all non-etched areas within the same zone can employ the same placement strategy and measurement parameters, avoiding the need to configure parameters individually for each non-etched area and significantly improving the automation level and operational efficiency of the measurement system. Simultaneously, the etching process parameters within the same zone are typically consistent, and the fluctuation patterns of their etching depth also exhibit similarities, facilitating subsequent unified quality assessment and process adjustments.

[0040] S102. Based on the shape, determine a layout pattern that matches the contour shape of the non-etched area to generate candidate boundaries.

[0041] When the non-etched area is strip-shaped or elongated, a pattern of evenly spaced points along its length is adopted. Multiple points are uniformly selected as candidate boundary measurement areas along the length of each elongated non-etched area. This layout pattern can comprehensively detect the uniformity of etching depth along the length of the elongated boundary, avoiding the problem of excessive local depth deviation.

[0042] When the non-etched area is a regular polygon, a grid layout is used. The entire product surface is divided into equally spaced grids, and each grid intersection corresponds to a candidate boundary measurement area. This layout can uniformly cover the entire product surface and is suitable for non-etched area structures with regular array distribution.

[0043] When the non-etched area has an irregular surface shape, an adaptive triangular mesh layout mode is adopted. Candidate measurement areas are automatically densified in regions with high boundary curvature of the non-etched area, and appropriately sparsed in regions with low boundary curvature. This layout mode effectively reduces redundant measurements and improves measurement efficiency while ensuring measurement accuracy.

[0044] S103. Determine the grid sampling interval based on the distribution density.

[0045] A higher distribution density in the non-etched area indicates a greater number of boundaries per unit area, requiring a denser number of measurement points to fully reflect the etching quality. The controller automatically determines the appropriate grid sampling interval based on the pre-stored mapping relationship between the distribution density and the grid sampling interval.

[0046] In some embodiments, when the non-etched area distribution density is greater than 100 per square centimeter, the grid sampling interval can be 2 to 3 millimeters. When the non-etched area distribution density is 50 to 100 per square centimeter, the grid sampling interval can be 3 to 5 millimeters. When the non-etched area distribution density is less than 50 per square centimeter, the grid sampling interval can be 5 to 8 millimeters.

[0047] S104. Determine the layout path direction of the measurement points according to the arrangement direction, so that the measurement path intersects with the arrangement direction.

[0048] The controller plans the optimal measurement probe movement path based on the arrangement direction of the non-etched area array. The measurement path intersects with the arrangement direction, enabling the probe to cover the most candidate measurement areas in a single movement, significantly reducing the number of probe movements and the total measurement time. For example, when the non-etched areas are arranged in a matrix along the horizontal and vertical directions, the measurement path is laid out diagonally, allowing for the simultaneous coverage of multiple rows and columns of non-etched area boundaries.

[0049] S105. Along the layout path, sample the candidate boundaries based on the grid sampling interval, and determine one or more of the sampled boundaries as the boundaries corresponding to the measurement areas within the process partition.

[0050] The controller generates a series of equally spaced sampling sections within the process zone based on a pre-determined deployment path direction and grid sampling interval. Each sampling section is perpendicular to the deployment path direction, and the distance between two adjacent sampling sections is equal to the grid sampling interval. The controller sequentially performs intersection calculations between each sampling section and all candidate boundaries within the process zone, obtaining multiple intersection points. The candidate boundary at each intersection point is a sampled boundary. The controller then determines these sampled boundaries as the boundaries corresponding to the measurement area within the process zone.

[0051] For the grid layout pattern corresponding to the non-etched areas of regular polygons, the layout path is usually along the diagonal direction. The sampling sections are perpendicular to the diagonal direction and are evenly distributed. Each sampling section intersects with the boundaries of multiple non-etched areas, resulting in multiple sampling boundaries. This method can cover the most non-etched area boundaries during a single probe movement, significantly improving measurement efficiency.

[0052] For the longitudinal layout pattern corresponding to the elongated non-etched area, the layout path follows the length direction of the elongated non-etched area. The sampling sections are perpendicular to the length direction of the elongated non-etched area and are evenly spaced. Each sampling section intersects the two long sides of the elongated non-etched area, resulting in two sampling boundaries. This method can comprehensively detect the uniformity of etching depth along the length direction of the elongated boundary, avoiding the problem of excessive local depth deviation.

[0053] For the adaptive triangular mesh layout mode corresponding to irregular planar non-etched areas, the layout path is along the edge direction of the triangular mesh. The sampling section is perpendicular to the edge direction of the triangular mesh, and the spacing is dynamically adjusted according to the local boundary curvature. In areas with large boundary curvature, the sampling spacing is appropriately reduced to increase the sampling density. In areas with small boundary curvature, the sampling spacing is appropriately increased to reduce redundant measurements.

[0054] After completing all sampling calculations, the controller deduplicates the obtained sampling boundaries. If the same candidate boundary intersects with multiple sampling sections, only one of the sampling boundaries is retained. Simultaneously, the controller checks for any unsampled critical boundaries. For all boundaries within the core heat-generating area of ​​the product, regardless of whether they intersect with sampling sections, they are forcibly identified as the boundaries corresponding to the measurement area.

[0055] In some embodiments, when the non-etched area distribution density is greater than 100 per square centimeter, the distance between adjacent sampling sections can be 2 to 3 millimeters. When the non-etched area distribution density is 50 to 100 per square centimeter, the distance between adjacent sampling sections can be 3 to 5 millimeters. When the non-etched area distribution density is less than 50 per square centimeter, the distance between adjacent sampling sections can be 5 to 8 millimeters.

[0056] S200. For each measurement area, select a first measurement point on the non-etched area side and a second measurement point on the etched area side on both sides of the boundary.

[0057] This application employs the Margin Surface Optimal Point (MSOP) method for selecting measurement points. This method, by symmetrically selecting measurement points on both sides of the boundary, effectively eliminates the influence of metal substrate flatness errors and edge chamfering errors on the measurement results, significantly improving measurement accuracy.

[0058] refer to Figure 3 and Figure 4 The diagrams illustrate the selection of measurement points according to one embodiment of this application. Based on the above embodiments, as another optional embodiment, a first measurement point located on the non-etched area side and a second measurement point located on the etched area side are selected on both sides of the boundary, specifically including: S201. Obtain a reference benchmark near the boundary. The reference benchmark includes the boundary itself and structural feature points inside the etched area.

[0059] The reference datum is the starting point used to determine the positions of the first and second measurement points. The controller automatically selects the most suitable reference datum based on the structural features near the boundary. Structural feature points refer to points within the etched area that have obvious geometric features, such as the geometric center point of an independent columnar etched groove, or the intersection of the centerlines of a long strip etched groove.

[0060] S202. When the reference datum is the boundary itself, starting from the reference datum, offset by a first preset distance and a second preset distance to the non-etched area side and the etched area side respectively to obtain the first measurement point and the second measurement point.

[0061] When there are no obvious structural feature points near the boundary, the boundary itself is used as the reference point. The controller selects a point on the boundary as the reference point, and then offsets it along the normal direction of the boundary at that point towards the non-etched area by a first preset distance to obtain the first measurement point. It then offsets it towards the etched area by a second preset distance to obtain the second measurement point. The first measurement point is completely located within the non-etched area, and the second measurement point is completely located within the etched area.

[0062] In some embodiments, the first preset distance and the second preset distance can be equal, both ranging from 0.3 to 1.2 mm. For example, in the third etching process, the first preset distance can be 1.03 mm and the second preset distance can be 1.1 mm.

[0063] S203. When the reference datum is a structural feature point inside the etched area, the structural feature point is used as the first measurement point, and the second measurement point is obtained by shifting the reference datum to one side of the etched area by a third preset distance.

[0064] When there are obvious structural feature points within the etched area, these feature points are preferentially selected as reference points. This method offers higher visual positioning accuracy and effectively reduces human error in point selection. The controller identifies the structural feature points within the etched area and directly uses them as the first measurement point. Then, along the normal direction from the structural feature point to the nearest boundary, it is offset by a third preset distance towards the non-etched area to obtain the second measurement point. At this point, the first measurement point is completely located within the etched area, and the second measurement point is completely located within the non-etched area, with both points equidistant from the boundary, equal to the preset distance.

[0065] In this embodiment, the numbers of the first and second measurement points only represent the order of measurement, not their corresponding regional attributes. Regardless of the numbering, the metal surface heights of the etched and non-etched areas will be obtained separately, and the etching depth will be calculated using the absolute value of the difference between the two, which fully conforms to the core principle of this method.

[0066] In some embodiments, the third preset distance can be 0.6 to 1.6 mm. For example, in the first etching process, the third preset distance can be 0.8 mm. In this case, the distance from the first measuring point and the second measuring point to the boundary is 0.4 mm.

[0067] S300. By means of infrared interferometry, the interference spectrum signals corresponding to the first measurement point and the second measurement point are obtained respectively, and the height of the first metal surface and the height of the second metal surface are calculated based on the peak characteristics of the metal surface in the interference spectrum signal.

[0068] refer to Figure 5 and Figure 6 The diagrams show peak diagrams of a non-etched area and an etched area, respectively, provided in embodiments of this application. The horizontal axis represents the relative range of wavelength (0-100%). By normalizing the original interference spectrum signal, the wavelength is mapped to a relative proportion; for example, 0 corresponds to the minimum wavelength of the measurement band, and 100% corresponds to the maximum wavelength. The vertical axis represents the relative value of light intensity (0-100%), reflecting the intensity of the reflected signal at different wavelengths.

[0069] Figure 5 The interference characteristics of the non-etched area are shown. Because the surface of the non-etched area is covered with etch-resistant ink, there are two reflection interfaces: the ink surface and the metal surface. Therefore, two peaks appear in the spectrum. The peak on the ink surface corresponds to the reflection wavelength of the ink-air interface, and the peak on the metal surface corresponds to the reflection wavelength of the metal-ink interface. These peaks are used to calculate the optical path difference through the wavelength difference, and then obtain the ink thickness and the height of the metal surface.

[0070] Figure 6 The interference characteristics of the etched area are shown. Since there is no ink covering the surface of the etched area, there is only one reflective interface on the metal surface. Therefore, only one peak appears in the spectrum, which is used to directly calculate the optical path difference of the metal surface through the wavelength, and then obtain the height of the metal surface after etching.

[0071] Based on the above embodiments, as another optional embodiment, interference spectral signals corresponding to the first measurement point and the second measurement point are obtained by infrared interferometry, and the height of the first metal surface and the height of the second metal surface are calculated based on the peak characteristics of the metal surface in the interference spectral signals, specifically including: S301. Control the infrared interferometer to emit broadband infrared light, which is then irradiated onto the first and second measurement points respectively.

[0072] The controller moves the measurement platform, aligning the ranging sensor probes sequentially with each of the first and second measurement points. Then, the infrared interferometer is activated, emitting broadband infrared light. This infrared light has a wavelength range of 800 to 880 nanometers, with a center wavelength of 840 nanometers. This wavelength of infrared light has strong penetrating power against etchable inks and also exhibits good reflectivity on metal surfaces such as aluminum and copper alloys, enabling the simultaneous acquisition of reflected signals from both ink and metal surfaces.

[0073] S302: Receive the first interference spectrum signal reflected from the first measurement point and the second interference spectrum signal reflected from the second measurement point. The first interference spectrum signal corresponds to the metal surface and the ink surface at the first measurement point, and the second interference spectrum signal corresponds to the metal surface at the second measurement point.

[0074] The reference mirror inside the ranging sensor probe splits the incident infrared light into two beams. One beam is reflected by the reference mirror to form a reference beam, while the other beam illuminates the surface of the product being measured to form a measurement beam. The measurement beam is reflected off the product surface and returns to the sensor array, where it interferes with the reference beam to form an interference spectral signal containing height information.

[0075] For measurement points located in the non-etched area, the surface is covered with an etch-resistant ink. Part of the measurement light is reflected on the ink surface, and the other part penetrates the ink and is reflected on the metal surface. Therefore, the corresponding interference spectrum signal contains two independent interference signals, corresponding to the ink surface and the metal surface, respectively.

[0076] For measurement points located in the etched area, the surface is uncovered with ink. The measurement light is reflected directly from the metal surface. Therefore, the corresponding interference spectrum signal contains only one interference signal, corresponding to the metal surface.

[0077] S303. Process the first interference spectrum signal and the second interference spectrum signal respectively, and draw the corresponding feature maps.

[0078] The controller preprocesses the acquired raw interference spectrum signal. First, noise reduction is performed to remove interference signals such as ambient light and electronic noise. Noise reduction methods can include moving average filtering and wavelet denoising. Then, the processed spectral signal is decomposed into light intensity signals of independent wavelengths, and a light intensity-wavelength curve is plotted, along with a characteristic spectrum. The characteristic spectrum can include a light intensity-wavelength peak plot and a light intensity-optical path difference plot.

[0079] S304. Based on the feature map of the first interference spectrum signal, identify and extract the peak features of the metal surface, ignoring the peak features of the ink surface; based on the feature map of the second interference spectrum signal, identify and extract the peak features of the metal surface.

[0080] The controller employs a peak detection algorithm to identify all valid peaks in the feature map. Then, based on the reflectivity of the ink and metal, and the difference in optical path difference, it distinguishes between ink surface peaks and metal surface peaks. Generally, peaks with smaller optical path differences correspond to the ink surface, while peaks with larger optical path differences correspond to the metal surface. When the ink has good penetration, the intensity of the metal surface peaks may be higher than that of the ink surface peaks; conversely, when the ink is thicker or has poor penetration, the intensity of the metal surface peaks may be lower than that of the ink surface peaks, leading to a decrease in the signal-to-noise ratio. The controller extracts characteristic parameters of the metal surface peaks, including optical path difference coordinates, light intensity, and phase shift.

[0081] S305. Based on the wave peak characteristics of each metal surface, calculate the height of the first metal surface and the height of the second metal surface respectively.

[0082] The controller, combining the parameters of the reference light, calculates the absolute height of the metal surface at each measurement point using an interferometric ranging formula. In some embodiments, 10 to 15 sets of spectral data are collected for each measurement point. The controller discards abnormal data with peak intensities below a preset intensity threshold and calculates the average height of the remaining valid data as the final metal surface height for that measurement point.

[0083] S400: Based on the height of the first metal surface and the height of the second metal surface, the etching depth of the corresponding measurement area is obtained.

[0084] The absolute value of the difference between the height of the first metal surface and the height of the second metal surface is calculated as the etching depth at the corresponding measurement area.

[0085] The first metal surface height is the height of the original metal substrate in the non-etched area, and the second metal surface height is the height of the metal substrate in the etched area. The absolute value of the difference between the two is the etching depth at the measurement area.

[0086] The controller records the etching depth data for each measurement area after each etching operation, generating a historical etching depth curve for each measurement point. It calculates the deviation between the actual etching depth and the preset target depth, storing this deviation as an error compensation value. In the next etching measurement, this error compensation value is used to correct the calculated original etching depth, further improving measurement accuracy.

[0087] Based on the above embodiments, as another optional embodiment, the method further includes: S500: Based on the heat dissipation requirements and etching structure density of each measurement area in the metal heat dissipation product, obtain the weight coefficients corresponding to each of the multiple measurement areas.

[0088] Different measurement areas have varying degrees of impact on the overall heat dissipation performance of the product. The controller assigns different weighting coefficients to each measurement area based on its heat dissipation requirements and etched structure density. Higher heat dissipation requirements and greater etched structure density result in larger weighting coefficients.

[0089] The weighting of heat dissipation requirements is determined based on the heat power density of the product area corresponding to the measurement region. A higher heat power density indicates more stringent heat dissipation requirements for that area, thus warranting a higher weighting coefficient. For example, the core area directly beneath the chip has the highest heat power density, and its weighting coefficient can be set to 1.5. The edge areas, farther from the chip, have lower heat power densities, and their weighting coefficient can be set to 0.8.

[0090] The etching density weight is determined based on the etching point density near the measurement area. A higher etching point density indicates a larger heat dissipation surface area in the area, resulting in a more significant impact on heat dissipation performance, and therefore a higher weighting coefficient is assigned.

[0091] S501. Obtain the historical deviation value of the etching depth of each measurement area in each batch measurement.

[0092] The controller retrieves etching depth measurement data from the database for each production batch of this product model and calculates the average deviation between the etching depth and the target depth for each measurement area in each batch. This historical deviation value reflects the etching process stability of the measurement area.

[0093] S502. When the historical deviation value is higher than the first stability threshold, decrease the weighting coefficient. When the historical deviation value is lower than the second stability threshold, increase the weighting coefficient.

[0094] For measurement areas with poor etching process stability, the reliability of the measurement results is low; therefore, their weighting coefficients should be appropriately reduced. For measurement areas with good etching process stability, the reliability of the measurement results is high; therefore, their weighting coefficients should be appropriately increased. By dynamically adjusting the weighting coefficients, the final evaluation results can be made more objective and accurate.

[0095] S503. Weighted summation of the etching depth at each measurement area yields the etching deviation index of the metal heat dissipation product.

[0096] The formula for calculating the etching deviation index includes: E=Σ(w i ×|d i -d0|); Where E is the etching deviation index, w i Let d be the weighting coefficient for the i-th measurement region. i d0 represents the actual etching depth of the i-th measurement area, and d0 represents the preset target etching depth.

[0097] S504. If the etching deviation index is lower than the preset deviation threshold, output a product qualification signal.

[0098] When the etching deviation index is below the deviation threshold, it indicates that the overall etching quality of the product meets the requirements. The controller outputs a product qualification signal and generates an etching quality inspection report. The inspection report includes etching depth data, weighted average depth, etching uniformity, and other information for all measured areas.

[0099] S505. If the etching deviation index is greater than or equal to the preset deviation threshold, output a product non-conforming signal and mark at least one measurement area that contributes the most to the etching deviation index.

[0100] When the etching deviation index is greater than or equal to the deviation threshold, it indicates that the overall etching quality of the product does not meet the requirements. The controller outputs a product non-conformance signal and calculates the contribution of each measurement area to the etching deviation index. The contribution is calculated by multiplying the weight coefficient of the measurement area by the absolute value of its etching depth deviation. The controller sorts the measurement areas by contribution from largest to smallest and marks the top 1 to 3 measurement areas with the largest contributions. Simultaneously, a non-conforming product analysis report is generated, indicating the specific location of the non-conformance, the magnitude of the deviation, and the percentage of contribution, providing accurate data support for subsequent process improvements.

[0101] Based on the above embodiments, as another optional embodiment, the method further includes: S600. Based on the characteristic spectrum of the first interference spectrum signal, calculate the ratio between the signal intensity of the metal surface peak and the signal intensity of the ink surface peak, and calculate the signal-to-noise ratio of the metal surface peak.

[0102] The signal-to-intensity ratio (SINR) is the ratio of the peak intensity of the metal surface peak to the peak intensity of the ink surface peak. The signal-to-noise ratio (SNR) is the ratio of the peak intensity of the metal surface peak to the background noise intensity. These two parameters reflect the quality of the metal surface peaks and the reliability of the measurement results.

[0103] S601. If the ratio is higher than the preset first ratio threshold and the signal-to-noise ratio is higher than the preset first signal-to-noise ratio threshold, then the measurement result of the current measurement area is marked as high confidence and the etching depth is output.

[0104] When both the signal strength ratio and the signal-to-noise ratio are high, it indicates that the wave peaks on the metal surface are clear and stable, and the measurement results are reliable. In this case, the measurement results are marked as high confidence, and the etching depth is directly output.

[0105] In some embodiments, the first ratio threshold can be 2.0, and the first signal-to-noise ratio threshold can be 10. For example, in the first etching process, when using 7022 type single-layer ink, the signal intensity ratio of the metal surface peaks is usually greater than 2.0, and the signal-to-noise ratio is greater than 10, which is a high-confidence measurement result.

[0106] S602. If the ratio is between the preset second ratio threshold and the first ratio threshold, and the signal-to-noise ratio is higher than the first signal-to-noise ratio threshold, then the measurement result of the current measurement area is marked as medium confidence, and repeated measurement is triggered.

[0107] During repeated measurements, the system incorporates a dispersion evaluation mechanism and termination conditions. Specifically, the system calculates the range of etching depths for N consecutive measurements in real time. When the range of etching depths for N consecutive measurements is less than a preset dispersion threshold, it indicates that the measurement data has converged. At this point, the measurement is stopped, the measurement results are deemed stable, and the average etching depth of these N measurements is taken as the final output.

[0108] Conversely, if the total number of repeated measurements reaches the preset maximum threshold, and the range of etching depth is still greater than or equal to the dispersion threshold, it indicates that the signal at the measurement point fluctuates significantly and the data cannot converge. At this point, the system forcibly stops the measurement, determines that the measurement results in the current measurement area are interfered with, downgrades the confidence level of the measurement results, and outputs an alarm signal to prompt the operator to manually re-inspect the area.

[0109] In some embodiments, the second ratio threshold can be 1.0. The dispersion threshold can be set according to the accuracy requirements of the target etching depth, for example, 2 micrometers. The maximum number of times threshold can be 5 times, and the N value for continuous measurement can be 3 times. For example, in the second etching process, when using 203k type single-layer ink, the signal intensity ratio of the metal surface peak is usually between 1.0 and 2.0, which is a medium confidence measurement result, and the system will perform repeated measurement judgment according to the above logic.

[0110] S603. If the ratio is lower than the second ratio threshold or the signal-to-noise ratio is lower than the first signal-to-noise ratio threshold, the measurement result of the current measurement area is determined to be unreliable, and an alarm signal is output.

[0111] When the signal strength ratio or signal-to-noise ratio is too low, it indicates that the wave peaks on the metal surface are very weak, or even submerged by noise, making accurate identification impossible. In this case, the measurement result is deemed unreliable, and an alarm signal is output to prompt the operator to conduct a manual inspection.

[0112] Based on the above embodiments, as another optional embodiment, the method further includes: S700 When the measurement result is marked as medium confidence or unreliable, calculate the optical path difference between the ink surface peak and the metal surface peak based on the characteristic spectrum of the first interference spectrum signal.

[0113] In some embodiments, before or simultaneously with triggering repeated measurements or outputting an alarm signal in steps S602-S603, the system executes step S700 to salvage potentially valid measurement data as much as possible. The feature spectrum includes a light intensity-optical path difference graph, with the horizontal axis representing the optical path difference and the vertical axis representing the light intensity. The controller pre-establishes a mapping table between optical path difference and wavelength, which is stored in a local database.

[0114] The controller extracts the optical path difference coordinates of the peaks on the ink surface and the peaks on the metal surface from the feature spectrum, calculates the difference between the two, and obtains the optical path difference difference of the measured light traveling back and forth in the ink layer.

[0115] S701. Based on the optical path difference between the peaks on the ink surface and the peaks on the metal surface and the preset ink refractive index, the ink thickness measurement value is obtained.

[0116] The formulas for calculating ink thickness include: d = ΔL / (2n); Where d is the ink thickness, ΔL is the optical path difference, and n is the preset ink refractive index.

[0117] The controller has a pre-stored database of refractive indices for different types of inks, including commonly used etch-resistant inks such as 7022, 203k, and 701. Based on the ink type used in the current etching process, the corresponding refractive index parameter is called to calculate the measured ink thickness. This measured value is then compared with a preset theoretical range for ink thickness to determine if the calculation result is reasonable.

[0118] S702. Based on the optical path difference coordinates of the ink surface peaks on the characteristic spectrum and the ink thickness measurement, calculate the theoretical optical path difference coordinates of the metal surface peaks on the characteristic spectrum, and recalculate the height of the first metal surface based on the theoretical optical path difference coordinates.

[0119] The controller calculates the optical path difference increment ΔL = 2 × n × d as the measuring light travels back and forth in the ink layer, based on the measured ink thickness and the preset ink refractive index.

[0120] Where ΔL is the optical path difference increment, n is the preset ink refractive index, and d is the measured ink thickness.

[0121] The controller adds the optical path difference coordinates of the ink surface peaks to the optical path difference increment to obtain the theoretical optical path difference coordinates L of the metal surface peaks. m =L i +ΔL.

[0122] Among them, L m L represents the theoretical optical path difference coordinates of the wave crests on the metal surface. i The coordinates are the optical path difference coordinates of the peaks on the ink surface.

[0123] The controller searches for peaks on the feature map, centered on the theoretical optical path difference coordinates, within a preset search range. The width of the search range is typically ±5% of the theoretical optical path difference coordinates. If a peak is detected within the search range, it is taken as the corrected peak on the metal surface. If no obvious peak is detected within the search range, the point corresponding to the theoretical optical path difference coordinates is taken as the theoretical peak on the metal surface.

[0124] The controller consults the mapping table between optical path difference and wavelength based on the corrected or theoretical optical path difference coordinates of the metal surface peaks to obtain the corresponding wavelength value. Then, combined with the system parameters of the infrared interferometer, it recalculates the height of the first metal surface at the first measurement point using the interferometric ranging formula.

[0125] The controller calculates the difference between the recalculated first metal surface height and the previously calculated second metal surface height to obtain the corrected etching depth. Simultaneously, the controller marks this corrected etching depth as the result of the peak enhancement processing and records the corresponding processing parameters, including the ink thickness measurement, theoretical optical path difference coordinates, and search range.

[0126] In some embodiments, the width of the search range can be ±3% to ±7% of the theoretical optical path difference coordinates.

[0127] refer to Figure 7 This application also provides an etching depth measurement system for metal heat dissipation products, the system comprising: The measurement area determination module is used to determine multiple process partitions based on the etching process layout of the metal heat dissipation product, and to determine at least one measurement area within each process partition. Each measurement area corresponds to the boundary between an etched area and a non-etched area. The measurement point selection module is used to select a first measurement point on the non-etched area side and a second measurement point on the etched area side for each measurement region, respectively, on both sides of the boundary. The spectrum acquisition module is used to control the infrared interferometer to emit broadband infrared light, which is then irradiated at the first and second measurement points, respectively, and to receive the corresponding interference spectrum signals. The peak extraction module is used to process the interference spectrum signal, draw feature maps, and identify and extract the peak features of the metal surface. The etching depth calculation module is used to calculate the height of the first metal surface and the height of the second metal surface based on the wave peak characteristics of the metal surface, so as to obtain the etching depth of the corresponding measurement area.

[0128] Based on the above embodiments, as another optional embodiment, the measurement point selection module is specifically used for: Obtain a reference benchmark near the boundary, which includes the boundary itself and structural feature points inside the etched area; When the reference datum is the boundary itself, starting from the reference datum, offset by a first preset distance and a second preset distance to the non-etched area side and the etched area side respectively to obtain the first measurement point and the second measurement point; When the reference point is a structural feature point inside the etched area, the structural feature point is used as the first measurement point, and the second measurement point is obtained by shifting the reference point to one side of the etched area by a third preset distance.

[0129] It should be noted that the system provided in the above embodiments is only illustrated by the division of the above functional modules. In actual applications, the above functions can be assigned to different functional modules as needed, that is, the internal structure of the device can be divided into different functional modules to complete all or part of the functions described above. In addition, the system and method embodiments provided in the above embodiments belong to the same concept, and the specific implementation process can be found in the method embodiments, which will not be repeated here.

[0130] Based on the above embodiments, as another optional embodiment, the present application embodiment may further include a computer storage medium, which may store multiple instructions adapted for loading by a processor and executing a method of the above embodiments. For the specific execution process, please refer to the detailed description of the above embodiments, which will not be repeated here.

[0131] Based on the above embodiments, as another optional embodiment, this application embodiment may further include an electronic device. The electronic device may include: at least one processor, at least one communication bus, a user interface, at least one network interface, and a memory.

[0132] The communication bus is used to enable communication between these components.

[0133] The user interface may include a display screen and a camera. Optional user interfaces may also include standard wired interfaces and wireless interfaces.

[0134] The network interface may include standard wired interfaces and wireless interfaces (such as Wi-Fi interfaces).

[0135] The processor may include one or more processing cores. It connects to various parts of the server via various interfaces and lines, executing instructions, programs, code sets, or instruction sets stored in memory, and accessing data stored in memory to perform various server functions and process data. Optionally, the processor may be implemented using at least one of the following hardware forms: Digital Signal Processing (DSP), Field-Programmable Gate Array (FPGA), and Programmable Logic Array (PLA). The processor may integrate one or more of the following: Central Processing Unit (CPU), Graphics Processing Unit (GPU), and modem. The CPU primarily handles the operating system, user interface, and applications; the GPU is responsible for rendering and drawing the content displayed on the screen; and the modem handles wireless communication. It is understood that the modem may also be implemented as a separate chip without being integrated into the processor.

[0136] The memory may include random access memory (RAM) or read-only memory. Optionally, the memory may include a non-transitory computer-readable storage medium. The memory can be used to store instructions, programs, code, code sets, or instruction sets. The memory may include a program storage area and a data storage area, wherein the program storage area may store instructions for implementing an operating system, instructions for at least one function (such as touch function, sound playback function, image playback function, etc.), instructions for implementing the above-described method embodiments, etc.; the data storage area may store data involved in the above-described method embodiments, etc. Optionally, the memory may also be at least one storage device located remotely from the aforementioned processor. As a computer storage medium, the memory may include an operating system, a network communication module, a user interface module, and an application program of one method.

[0137] In electronic devices, the user interface is primarily used to provide an input interface for users and to acquire user input data; while the processor can be used to call an application program stored in memory that represents a method. When executed by one or more processors, this causes the electronic device to perform one or more methods as described in the above embodiments. It should be noted that, for the sake of simplicity, the foregoing method embodiments are all described as a series of actions. However, those skilled in the art should understand that this application is not limited to the described order of actions, as some steps can be performed in other orders or simultaneously according to this application. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are preferred embodiments, and the actions and modules involved are not necessarily essential to this application.

[0138] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0139] In the various embodiments provided in this application, it should be understood that the disclosed apparatus can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some service interface; the indirect coupling or communication connection between apparatuses or units may be electrical or other forms.

[0140] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0141] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0142] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage device (CMD). Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a memory and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods of the various embodiments of this application. The aforementioned memory includes various media capable of storing program code, such as USB flash drives, portable hard drives, magnetic disks, or optical disks.

[0143] The above are merely exemplary embodiments of this disclosure and should not be construed as limiting the scope of this disclosure. Any equivalent changes and modifications made in accordance with the teachings of this disclosure shall still fall within the scope of this disclosure. Other embodiments of this disclosure will readily conceive of those skilled in the art upon consideration of the specification and the disclosure of practical truths.

[0144] This application is intended to cover any variations, uses, or adaptations of this disclosure that follow the general principles of this disclosure and include common knowledge or customary techniques in the art not described in this disclosure. The specification and embodiments are to be considered exemplary only, and the scope and spirit of this disclosure are defined by the claims.

Claims

1. A method for measuring the etching depth of a metal heat dissipation product, characterized in that, The method includes: Based on the etching process layout of the metal heat dissipation product, multiple process zones are determined, and at least one measurement area is determined in each process zone. Each measurement area corresponds to the boundary between an etched area and a non-etched area. For each of the measurement areas, a first measurement point located on the non-etched area side and a second measurement point located on the etched area side are selected on both sides of the boundary. By means of infrared interferometry, the interference spectral signals corresponding to the first measurement point and the second measurement point are obtained respectively, and the height of the first metal surface and the height of the second metal surface are calculated based on the metal surface peak characteristics in the interference spectral signals. The etching depth of the corresponding measurement area is calculated based on the height of the first metal surface and the height of the second metal surface.

2. The method for measuring the etching depth of a metal heat dissipation product according to claim 1, characterized in that, The process involves determining multiple process zones based on the etching process layout of the metal heat dissipation product, and defining at least one measurement area within each process zone. Specifically, this includes: Based on the distribution characteristics of the non-etched areas in the etching process layout, the metal heat dissipation product is divided into multiple process zones. For each process zone, the shape, distribution density, and arrangement direction of the corresponding non-etched areas are obtained. Among them, each non-etched area in the same process zone satisfies the following: the aspect ratio deviation of the shape is less than the first zone threshold, the difference rate of the distribution density is less than the second zone threshold, and the included angle of the main axis of the arrangement direction is less than the third zone threshold. Based on the shape, a layout pattern matching the contour shape of the non-etched area is determined to generate candidate boundaries; The grid sampling interval is determined based on the distribution density; The layout path of the measurement points is determined according to the arrangement direction, so that the measurement path intersects with the arrangement direction; Along the layout path, based on the grid sampling interval, the candidate boundaries are sampled, and one or more of the sampled boundaries are determined as the boundaries corresponding to the measurement area within the process partition.

3. The method for measuring the etching depth of a metal heat dissipation product according to claim 1, characterized in that, The step of selecting a first measurement point on the non-etched area side and a second measurement point on the etched area side on both sides of the boundary specifically includes: Obtain a reference benchmark near the boundary, the reference benchmark including the boundary itself and structural feature points inside the etched area; When the reference datum is the boundary itself, starting from the reference datum, the first preset distance and the second preset distance are offset to the non-etched area side and the etched area side, respectively, to obtain the first measurement point and the second measurement point. When the reference reference is a structural feature point inside the etched area, the structural feature point is used as the first measurement point, and the second measurement point is obtained by shifting the reference reference to one side of the etched area by a third preset distance.

4. The method for measuring the etching depth of a metal heat dissipation product according to claim 1, characterized in that, The non-etched area includes an ink surface and a metal surface, and the etched area includes a metal surface; the calculation of the height of the first metal surface and the height of the second metal surface specifically includes: The infrared interferometer is controlled to emit broadband infrared light, which is then irradiated onto the first measurement point and the second measurement point, respectively. Receive a first interference spectrum signal reflected from the first measurement point and a second interference spectrum signal reflected from the second measurement point; wherein the first interference spectrum signal corresponds to the metal surface and the ink surface at the first measurement point, and the second interference spectrum signal corresponds to the metal surface at the second measurement point; Based on the first interference spectral signal and the second interference spectral signal, corresponding feature maps are drawn respectively; Based on the feature maps described above, the corresponding metal surface wave peak features are identified and extracted respectively; Based on the wave peak characteristics of each metal surface, the height of the first metal surface and the height of the second metal surface are calculated respectively.

5. The method for measuring the etching depth of a metal heat dissipation product according to claim 4, characterized in that, The method further includes: Based on the characteristic spectrum of the first interference spectrum signal, the ratio between the signal intensity of the metal surface peak and the signal intensity of the ink surface peak, as well as the signal-to-noise ratio of the metal surface peak, are calculated. If the ratio is higher than a preset first ratio threshold and the signal-to-noise ratio is higher than a preset first signal-to-noise ratio threshold, then the measurement result of the current measurement area is marked as high confidence and the etching depth is output. If the ratio is between a preset second ratio threshold and a first ratio threshold, and the signal-to-noise ratio is higher than the first signal-to-noise ratio threshold, then the measurement result of the current measurement area is marked as medium confidence, and repeated measurement is triggered. During repeated measurements, when the range of the etching depth of N consecutive measurements is less than a preset dispersion threshold, the measurement is stopped, the measurement result is determined to be stable, and the average value of the etching depth of the N measurements is taken as the final output; when the total number of repeated measurements reaches a preset maximum number threshold, and the range of the etching depth is still greater than or equal to the dispersion threshold, the measurement is stopped, the measurement result of the current measurement area is determined to be interfered with, the confidence level of the measurement result is downgraded, and an alarm signal is output. If the ratio is lower than the second ratio threshold or the signal-to-noise ratio is lower than the first signal-to-noise ratio threshold, the measurement result of the current measurement area is determined to be unreliable, and an alarm signal is output.

6. The method for measuring the etching depth of a metal heat dissipation product according to claim 5, characterized in that, The method further includes: When the measurement result is marked as medium confidence or unreliable, the optical path difference between the ink surface peak and the metal surface peak is calculated based on the characteristic spectrum of the first interference spectrum signal. Based on the optical path difference between the peaks on the ink surface and the peaks on the metal surface and the preset ink refractive index, the ink thickness measurement value is obtained; Based on the optical path difference coordinates of the ink surface peak on the feature spectrum and the ink thickness measurement, the theoretical optical path difference coordinates of the metal surface peak on the feature spectrum are calculated, and the height of the first metal surface is recalculated based on the theoretical optical path difference coordinates.

7. The method for measuring the etching depth of a metal heat dissipation product according to claim 1, characterized in that, The method further includes: Based on the heat dissipation requirements and etching structure density of each measurement region in the metal heat dissipation product, the weighting coefficients corresponding to each of the multiple measurement regions are obtained. Obtain the historical deviation values ​​of the etching depth of each measurement area in each batch measurement; When the historical deviation value is higher than the first stability threshold, the weighting coefficient is reduced; When the historical deviation value is lower than the second stability threshold, the weighting coefficient is increased; The etching deviation index of the metal heat dissipation product is obtained by weighted summation of the etching depth at each of the measurement areas. If the etching deviation index is lower than the preset deviation threshold, a product qualification signal is output. If the etching deviation index is greater than or equal to a preset deviation threshold, a product defect signal is output, and at least one measurement area that contributes the most to the etching deviation index is marked.

8. A system for measuring the etching depth of a metal heat dissipation product, characterized in that, The system employs the etching depth measurement method for metal heat dissipation products as described in any one of claims 1-7, wherein the system comprises: The measurement area determination module is used to determine multiple process partitions based on the etching process layout of the metal heat dissipation product, and to determine at least one measurement area within each process partition, wherein each measurement area corresponds to a boundary between an etched area and a non-etched area. The measurement point selection module is used to select, for each of the measurement areas, a first measurement point located on the side of the non-etched area and a second measurement point located on the side of the etched area on both sides of the boundary. The spectral acquisition module is used to control the infrared interferometer to emit broadband infrared light, which is then irradiated onto the first measurement point and the second measurement point, respectively, and to receive the corresponding interference spectral signals. The peak extraction module is used to process the interference spectrum signal, draw a feature map, and identify and extract the peak features of the metal surface; The etching depth calculation module is used to calculate the height of the first metal surface and the height of the second metal surface based on the wave peak characteristics of the metal surface, so as to obtain the etching depth of the corresponding measurement area.

9. An electronic device, characterized in that, It includes a processor, a memory, a user interface, and a network interface. The memory is used to store instructions, the user interface and the network interface are used to communicate with other devices, and the processor is used to execute the instructions stored in the memory to cause the electronic device to perform the method as described in any one of claims 1-7.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a plurality of instructions adapted to be loaded by a processor and executed as described in any one of claims 1-7.

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