Magnetic sensor device and manufacturing method for a magnetic sensor device

Abstract

A magnetic sensor device has at least one measuring bridge device (10) comprising at least one measuring bridge (12, 12a, 12b) and at least four sensor elements (14a to 14h), a first sensor element (14a) being of a first sensor element type and having a first sensitivity and / or a first measuring range along a predefined first sensor axis (22a) and being arranged in a first sensor element layer (18a) on and / or above a first substrate surface (20a), a second sensor element (14b) being arranged in a second sensor element layer (18b) on a side of the first sensor element layer (18a), the second sensor element type of the second sensor element being different from the first sensor element type of the first sensor element, the second sensor axis (22b) of the second sensor element being different from the first sensor axis of the first sensor element, and / or the second sensitivity and / or the second measuring range of the second sensor element being different from the first sensitivity and / or the first measuring range of the first sensor element.

Description

Technical Field

[0001] This invention relates to a magnetic sensor device. Similarly, this invention relates to a method for manufacturing a magnetic sensor device. Background Technology

[0002] US 10,418,546 B2 describes a magnetic sensor comprising a plurality of measuring bridges, wherein a first sensing element of the measuring bridges is integrated in a first sensing element layer, and a second sensing element of the measuring bridges is integrated in a second sensing element layer, wherein the second sensing element layer is spaced apart from the first sensing element layer on one side of the first sensing element layer in a spatial direction perpendicular to the substrate surface orientation of the magnetic sensor. Summary of the Invention

[0003] This invention proposes a magnetic sensor device having the features of this invention and a method for manufacturing the magnetic sensor device having the features of this invention.

[0004] Advantages of the invention This invention presents an advantageous possibility for measuring measurement parameters (e.g., the magnetic field component of the magnetic field) of the magnetic field under inspection, particularly robust to stray fields and / or with relatively small angular errors, when utilizing a monolithic structure. The measurements obtained using this invention are also robust to non-uniform stray fields, especially (in a spatial direction parallel to the orientation of the first substrate surface of the corresponding magnetic sensor device). Furthermore, this invention enables coaxial measurement of at least two magnetic field components in a lateral position, i.e., at positions defined by two spatial directions parallel to the orientation of the first substrate surface. As will become clear from the following description, this invention simplifies the miniaturization of magnetic sensor devices with relatively low manufacturing costs.

[0005] Another advantage of this invention over the prior art described above is the possibility of measuring different physical measurement parameters (e.g., magnetic field strength components along different spatial directions / sensing axes). Accordingly, this invention can also extend the dynamic measurement range of the magnetic sensor device thus realized by combining sensing elements with different sensitivities and / or different measurement ranges. This can be used for the miniaturization of the magnetic sensor device, by which magnetic sensor devices can measure magnetic field strength along different spatial directions and / or magnetic field strength within relatively large measurement ranges with high accuracy.

[0006] In an advantageous embodiment of the magnetic sensor device, a first sensing element is interconnected with at least one of at least four sensing elements arranged in a first sensing element layer as a first voltage divider of a measuring bridge or a first measuring bridge, and a second sensing element is interconnected with at least one of the at least four sensing elements arranged in a second sensing element layer as a second voltage divider of a measuring bridge or a second measuring bridge, wherein all sensing elements of the first voltage divider or the first measuring bridge are of the first sensing element type and have a first sensitivity and / or a first measurement range along their respective predetermined first sensing axes, and all sensing elements of the second voltage divider or the second measuring bridge are of the second sensing element type and have a second sensitivity and / or a second measurement range along a predetermined second sensing axis. As will become clear from the following description, this can be used to implement various magnetic sensor devices with different sensing axes and / or different sensitivities or different measurement ranges.

[0007] For example, the first sensing element type may be different from the second sensing element type, and the first and second sensing element types may each come from a set including TMR sensing elements, GMR sensing elements, AMR sensing elements, and / or Hall sensing elements. Therefore, the corresponding type of sensing element in the first sensing element layer may be different from the corresponding type of sensing element in the second sensing element layer.

[0008] Alternatively or additionally, the first sensing axis may be oriented at a tilt angle between 60° and 120° relative to the second sensing axis. This allows the magnetic field strength of the magnetic field to be examined along two distinctly different sensing axes to be determined within a relatively small volume of the embodiments of the magnetic sensor device described herein.

[0009] In another advantageous embodiment, the first sensing axis is oriented at a tilt angle of less than or equal to 10° relative to the second sensing axis, wherein the first sensitivity differs from the second sensitivity, and / or the first measurement range differs from the second measurement range. Embodiments of the magnetic sensor device described herein enable measurements over a relatively large dynamic measurement range by combining sensing elements with different sensitivities / sensitivities / measurement ranges within a relatively small volume.

[0010] For example, the first sensing element layer may at least partially cover the surface of the first substrate and / or at least one layer that at least partially covers the surface of the first substrate, wherein the second sensing element layer at least partially covers at least one intermediate layer that at least partially covers the first sensing element layer. Embodiments of the magnetic sensor device described herein can be manufactured with relatively little effort and at a relatively low cost.

[0011] Advantageously, the first sensing element layer may at least partially cover the surface of the first substrate and / or at least one first layer that at least partially covers the surface of the first substrate, wherein the second sensing element layer at least partially covers the surface of the second substrate and / or at least one second layer that at least partially covers the surface of the second substrate, wherein at least one bonding connection is formed between the first outer surface of the first sensing element layer facing away from the first substrate surface and the second outer surface of the second sensing element layer facing away from the second substrate surface. Embodiments of the magnetic sensor device described herein can also be manufactured relatively simply and relatively inexpensively.

[0012] In an alternative embodiment of the magnetic sensor device, a first sensing element layer at least partially covers a first substrate surface and / or at least one first layer at least partially covers the first substrate surface, wherein a second sensing element layer at least partially covers a second substrate surface of a second substrate and / or at least one second layer at least partially covers the second substrate surface, wherein at least one bonding connection is formed between the outer surface of the first sensing element layer facing away from the first substrate surface and another substrate surface of the second substrate facing away from the second substrate surface. The embodiments of the magnetic sensor device described herein can also be manufactured with relatively little effort and at relatively low manufacturing costs.

[0013] Advantageously, the center tap contact can be configured as a tap contact in the conductor rail that electrically connects the first sensing element and the second sensing element. Although the sensing element density per unit first substrate surface area of ​​the measuring bridge device is relatively high, this still simplifies the electrical contact of at least one measuring bridge of the measuring bridge device.

[0014] In particular, at least the four sensing elements can be electrically connected to a common supply voltage. This simplifies the power supply to at least four sensing elements of at least one measuring bridge.

[0015] Furthermore, a corresponding manufacturing method for a magnetic sensor device is proposed, which also achieves the advantages described above. It should be clearly noted that the manufacturing method can be extended based on the embodiments of the magnetic sensor device explained above. Attached Figure Description

[0016] Other features and advantages of the invention will now be explained with reference to the accompanying drawings. These drawings show: Figures 1 to 9 Schematic diagrams of different implementations of the magnetic sensor device; Figure 10 : A flowchart illustrating an implementation method for manufacturing a magnetic sensor device. Detailed Implementation

[0017] Figure 1A schematic diagram of a first embodiment of the magnetic sensor device is shown.

[0018] exist Figure 1 The magnetic sensor device schematically shown has at least one measuring bridge device 10. The measuring bridge device 10 should be understood as an electronic device comprising at least one measuring bridge 12a and 12b and having at least four sensing elements 14a to 14h. The at least one measuring bridge 12a and 12b of the measuring bridge device 10 can be formed by series and / or parallel circuits of their respective sensing elements 14a to 14h. Furthermore, the measuring bridge device 10 is designed such that, taking into account the bridging potential intercepted at the tap contact point 16 of the measuring bridge device 10, at least one measured value regarding the magnetic field present at the measuring bridge device 10 can be determined / has been determined. The at least one measured value can be, for example, the magnetic field strength of the magnetic field to be examined.

[0019] As in Figure 1 As can be seen, the first sensing element 14a, comprising at least four sensing elements 14a to 14h, is arranged in the first sensing element layer 18a. Conversely, the second sensing element 14b, comprising at least four sensing elements 14a to 14h, is integrated in the second sensing element layer 18b. When the first sensing element layer 18a is constructed on and / or above the first substrate surface 20a (not outlined) of the first substrate, the second sensing element layer 18b is located on one side of the first sensing element layer 18a, spaced apart from it in a spatial direction perpendicular to the orientation of the first substrate surface 20a. The distance between the first sensing element layer 18a and the second sensing element layer 18b can be, for example, less than or equal to 100 µm (micrometers), for example, less than or equal to 50 µm (micrometers), and particularly less than or equal to 10 µm (micrometers). The magnetic sensor device design described herein, distributing at least four sensing elements 14a to 14d across at least two sensing element layers 18a and 18b, simplifies the miniaturization of magnetic sensor devices. Furthermore, by constructing / distributing at least four sensing elements 14a to 14d on at least two sensing element layers 18a and 18b, the robustness of measurements obtained by the magnetic sensor device relative to non-uniform stray fields (in a spatial direction parallel to the orientation of the first substrate surface 20a). The relatively small distance between the first sensing element layer 18a and the second sensing element layer 18b also ensures that measurements performed by the magnetic sensor device are robust relative to field gradients in a spatial direction perpendicular to the orientation of the first substrate surface 20a.

[0020] The first sensing element 14a is a first sensing element type and has a first sensitivity and / or a first measurement range along a pre-given first sensing axis 22a. The first sensing element type may, for example, be located in a set including TMR (Tunnel Magnetoresistance), GMR (Giant Magnetoresistance), AMR (Anisotropic Magnetoresistive Effect), and / or Hall effect sensing elements. The second sensing element 14b is a second sensing element type and has a second sensitivity and / or a second measurement range along a pre-given second sensing axis 22b. The second sensing element type may also be selected from a set including TMR, GMR, AMR, and / or Hall effect sensing elements, respectively. However, the second sensing element type of the second sensing element 14b differs from the first sensing element type of the first sensing element 14a, the second sensing axis 22b of the second sensing element 14b differs from the first sensing axis 22a of the first sensing element 14a, and / or, the second sensitivity and / or second measurement range of the second sensing element 14b along the second sensing axis 22b differs from the first sensitivity and / or first measurement range of the first sensing element 14a along the first sensing axis 22a. As will become clear from the following description, the magnetic sensor device illustrated herein can therefore be used in many ways.

[0021] As in Figure 1 As schematically illustrated, for example, the first sensing axis 22a can be oriented at an angle of inclination between 60° and 120° relative to the second sensing axis 22b, for example, between 70° and 110°, especially between 80° and 100°, and particularly between 85° and 95°. Preferably, the first sensing axis 22a is oriented perpendicular to the second sensing axis 22b. Thus, within a relatively small volume covering the surface of the first substrate 20a, the magnetic field strength of the magnetic field to be inspected along two distinctly different sensing axes 22a and 22b can be determined at the same location. Therefore, in magnetic field inspection within a relatively small volume occupied by at least four sensing elements 14a to 14h, it is no longer necessary to be limited to only one of the sensing axes 22a or 22b. Furthermore, the embodiments described herein simplify the miniaturization of magnetic sensor devices that can be used at least as 2D magnetic sensors, and especially as 3D magnetic sensors.

[0022] Optionally, the type of the first sensing element may be the same as or different from the type of the second sensing element. Similarly, the first sensitivity of the first sensing element 14a along the first sensing axis 22a may be equal to or not equal to the second sensitivity of at least the second sensing element 14b along the second sensing axis 22b. Accordingly, the first measurement range may be different from the second measurement range. Thus, in the construction... Figure 1 The magnetic sensor device illustrated in the diagram offers a great deal of design freedom.

[0023] The first sensing element 14a can be interconnected with at least one of the at least four sensing elements 14a to 14h arranged in the first sensing element layer 18a to form a third sensing element 14c as a first measuring bridge 12a. Correspondingly, the second sensing element 14b can also be interconnected with at least one of the at least four sensing elements 14a to 14h arranged in the second sensing element layer 18b to form a second measuring bridge 12b. Preferably, in this case, all sensing elements 14a, 14c, 14e, and 14g of the first measuring bridge 12a are of the first sensing element type and have a first sensitivity and / or a first measurement range along a pre-given first sensing axis 22a, while all sensing elements 14b, 14d, 14f, and 14h of the second measuring bridge 12b are of the second sensing element type and have a second sensitivity and / or a second measurement range along a pre-given second sensing axis 22b. This is merely an example; in... Figure 1 In one embodiment, all sensing elements 14a, 14c, 14e and 14g of the first measuring bridge 12a are electrically connected to the first supply voltage V1, while all sensing elements 14b, 14d, 14f and 14h of the second measuring bridge 12b are electrically connected to the second supply voltage V2.

[0024] Different sensing axes 22a and 22b can be determined, for example, by means of the polarization / alignment of at least one material constituting the respective sensing elements 14a to 14h. "The pre-given first / second sensing axis 22a or 22b" can be understood both as the polarization / alignment of the corresponding material in a specific direction and as the polarization / alignment of the corresponding material in complementary opposite directions. In particular, fixedly applied magnetic polarization / alignment of the corresponding material can be used, wherein the specific polarization / alignment of the corresponding material of the individual sensing elements 14a to 14h that determine the first sensing axis 22a or the second sensing axis 22b can be oriented parallel or antiparallel to each other. However, preferably, all individual polarization / alignments are parallel to a definable plane, such as the first substrate surface 20a. In particular, the polarization / alignment of the material can involve the magnetic reference layer of the GMR or TMR sensing element.

[0025] Optionally, the first sensing element 14a may also have the same coordinates as the second sensing element 14b with respect to two spatial directions parallel to the first substrate surface 20a and perpendicular to each other. Specifically, all sensing elements 14a, 14c, 14e, and 14g in the first sensing element layer 18a may have coordinates with respect to two spatial directions parallel to the first substrate surface 20a and perpendicular to each other, at which corresponding sensing elements 14b, 14d, 14f, and 14h are present in the second sensing element layer 18b, respectively. This ensures particularly high stray field robustness of the magnetic sensor device implemented in this way, because, if necessary, the same field exists at the corresponding sensing elements 14a to 14h in the first and second sensing element layers 18a and 18b.

[0026] For example, sensing elements 14a to 14h integrated into at least two sensing element layers 18a and 18b can each have a reference layer. Figure 1 As illustrated graphically with arrow P, in this case, the corresponding magnetic polarization / alignment of the reference layers of sensing elements 14a to 14h can be oriented such that sensing elements 14a to 14h arranged in different sensing element layers 18a and 18b have the same coordinates with respect to two spatial directions parallel to the first substrate surface 20a and perpendicular to each other, the sensing elements having complementary magnetic polarization / alignment of their reference layers. Complementary magnetic polarization / alignment of reference layers can be understood as an angle of 90° or 180° between the reference layers. The corresponding free layers of the corresponding sensing elements 14a to 14d can have a preferred orientation of ±90° "rotation" relative to the polarization / alignment of the reference layers of the same sensing elements 14a to 14d.

[0027] In another embodiment, sensing elements 14a to 14d may each have a plurality of XMR resistive elements connected in series.

[0028] Figure 2 A schematic diagram of a second embodiment of the magnetic sensor device is shown.

[0029] and Figure 1 The implementation method described previously differs from that described earlier. Figure 2 In the magnetic sensor device, the first sensing shaft 22a and the second sensing shaft 22b are oriented relative to each other, such that there is a tilt angle of less than or equal to 10° between the first sensing shaft 22a and the second sensing shaft 22b. In particular, the first sensing shaft 22a can be oriented with a tilt angle of less than or equal to 5° relative to the second sensing shaft 22b, especially with a tilt angle of less than or equal to 3°. Preferably, the sensing shafts 22a and 22b are parallel to each other. However, in... Figure 2In this embodiment, the first sensitivity of at least the first sensing element 14a along the first sensing axis 22a is different from the second sensitivity of at least the second sensing element 14b along the second sensing axis 22b. Correspondingly, the first measurement range may also be different from the second measurement range. For example, in... Figure 2 As illustrated graphically with varying thicknesses of arrow P, all sensing elements 14a, 14c, 14e, and 14g of the first measuring bridge 12a can have a first sensitivity and / or a first measuring range along the first sensing axis 22a, while all sensing elements 14b, 14d, 14f, and 14h of the second measuring bridge 12b can have a second sensitivity and / or a second measuring range along the second sensing axis 22b, wherein the first sensitivity differs from the second sensitivity, and / or the first measuring range differs from the second measuring range. Therefore, Figure 2 The magnetic sensor device can have an advantageously large measurement range, within which the magnetic field strength of the magnetic field to be checked can be determined with high measurement accuracy.

[0030] Specifically, all sensing elements 14a, 14c, 14e, and 14g in the first sensing element layer 18a may have a first sensitivity and / or a first measurement range along the first sensing axis 22a, while all sensing elements 14b, 14d, 14f, and 14h in the second sensing element layer 18b may have a second sensitivity and / or a second measurement range, wherein the first sensitivity differs from the second sensitivity, and / or the first measurement range differs from the second measurement range. The different sensitivities / measurement ranges of sensing elements 14a to 14h in the two sensing element layers 18a and 18b can be achieved through different design features. The distribution of the corresponding sensing elements 14a to 14h on the two different sensing element layers 18a and 18b simplifies the construction of sensing elements 14a to 14h with different designs, such as different layer structures.

[0031] In particular, at least all sensing elements 14a, 14c, 14e, and 14g in the first sensing element 14a / first sensing element layer 18a may have different designs and / or different layer material structures compared to all sensing elements 14b, 14d, 14f, and 14h in the second sensing element 14b / second sensing element layer 18b. Alternatively or additionally, at least all sensing elements 14a, 14c, 14e, and 14g in the first sensing element 14a / first sensing element layer 18a may have different pre-applications, different biases, and / or different field shielding compared to all sensing elements 14b, 14d, 14f, and 14h in the second sensing element 14b / second sensing element layer 18b. By applying appropriate pre-applications, biases, or field shielding, the measurement ranges of all sensing elements 14a, 14c, 14e, and 14g in the first sensing element layer 18a and / or all sensing elements 14b, 14d, 14f, and 14h in the second sensing element layer 18b can be selectively shifted and / or extended. In particular, extended measurement ranges can be obtained in a simple manner for all sensing elements 14a, 14c, 14e, and 14g in the first sensing element layer 18a and / or all sensing elements 14b, 14d, 14f, and 14h in the second sensing element layer 18b, with the aid of so-called biasing. A larger / extended measurement range can be achieved by combining the different sensitivities / measurement ranges of sensing elements 14a to 14h using appropriate calculations of the bridging potential intercepted at the measuring bridge device 10.

[0032] For example, at least all sensing elements 14a, 14c, 14e and 14g in the first sensing element 14a / first sensing element layer 18a can be “conventional” TMR sensing elements, “conventional” GMR sensing elements or “conventional” AMR sensing elements, respectively, while at least all sensing elements 14b, 14d, 14f and 14h in the second sensing element 14b / second sensing element layer 18b can be vortex TMR sensing elements, vortex GMR sensing elements or vortex AMR sensing elements. Accordingly, at least all sensing elements 14a, 14c, 14e, and 14g in the first sensing element 14a / first sensing element layer 18a can also be "bottom spin valve" TMR sensing elements, "bottom spin valve" GMR sensing elements, and / or "bottom spin valve" AMR sensing elements, respectively, while at least all sensing elements 14b, 14d, 14f, and 14h in the second sensing element 14b / second sensing element layer 18b can be "dual spin valve" TMR sensing elements, "dual spin valve" GMR sensing elements, and / or "dual spin valve" TMR sensing elements. Optionally, at least all sensing elements 14a, 14c, 14e, and 14g in the first sensing element 14a / first sensing element layer 18a can also be polarized in a saturated state, while at least all sensing elements 14b, 14d, 14f, and 14h in the second sensing element 14b / second sensing element layer 18b can be unsaturated. Alternatively, the sensing elements 14a, 14c, 14e, and 14g in the first sensing element layer 18a, configured as TMR, GMR, or AMR sensing elements, may have different shapes / geometries compared to all the sensing elements 14b, 14d, 14f, and 14h in the second sensing element layer 18b, which may result in different field measurement ranges.

[0033] about Figure 2 For other features, properties, and advantages of magnetic sensor devices, see the section on Figure 1 The description of the previous implementation.

[0034] Figure 3 A schematic illustration of a third embodiment of the magnetic sensor device is shown.

[0035] exist Figure 3In the example, at least the first sensing element type of the first sensing element 14a is different from the second sensing element type of at least the second sensing element 14b. This is possible even if the first and second sensing element types come from a set including TMR sensing elements, GMR sensing elements, AMR sensing elements, and / or Hall sensing elements, respectively. In particular, all sensing elements 14a, 14c, 14e, and 14g of the first measuring bridge 12a can be of the first sensing element type, while all sensing elements 14b, 14d, 14f, and 14h of the second measuring bridge 12b can be of the second sensing element type, wherein the first sensing element type is different from the second sensing element type. Even if all sensing elements 14a, 14c, 14e, and 14g of the first sensing element layer 18a are of the first sensing element type and all sensing elements 14b, 14d, 14f, and 14h of the second sensing element layer 18b are of the second sensing element type, the first sensing element type can still be different from the second sensing element type.

[0036] Just as an example, in Figure 3 In the magnetic sensor device, sensing axes 22a and 22b are oriented parallel to each other. Optionally, the first sensitivity and / or first measurement range of at least all sensing elements 14a, 14c, 14e, and 14g along the first sensing axis 22a of the first sensing element 14a / first sensing element layer 18a may be equal to or not equal to the second sensitivity and / or second measurement range of at least all sensing elements 14b, 14d, 14f, and 14h along the second sensing axis 22b of the second sensing element 14b / second sensing element layer 18b.

[0037] As in Figure 3 As illustrated graphically, at least one tap contact 16 is constructed within a conductor track 24a that electrically connects the first sensing element 14a to the second sensing element 14b. The conductor track 24a should be understood as a conductive path extending from the first sensing element 14a to the second sensing element 14b and not crossing any other sensing elements 14c to 14h of the measuring bridge device 10. Preferably, the conductor track 24a includes a conductor track portion segment 26a that extends through a volume located between the first sensing element layer 18a and the second sensing element layer 18b. The conductor track portion segment 26a may be oriented particularly perpendicular to the first substrate surface 20a. Advantageously, at least one tap contact 16 in the conductor track 24a that electrically connects the first sensing element 14a to the second sensing element 14b is a center tap contact 16. Even in its miniaturized form, this simplifies the interception of the bridging potential at the measuring bridge device 10. Preferably, the center tap contact point 16 of the conductor track 24a is located within the conductor track section 26a that is oriented perpendicular to the first substrate surface 20a.

[0038] Furthermore, at least one of the tap contact points 16 may also be constructed in other conductor tracks 24b that electrically connect the third sensing element 14c to the fourth sensing element 14d. The conductor tracks 24b can be interpreted as conductive paths extending from the third sensing element 14c to the fourth sensing element 14d without passing through any other sensing elements 14a, 14b, and 14e to 14h of the measuring bridge device 10. The conductor tracks 24b may also have conductor track portion segments 26b that extend through the volume located between the first sensing element layer 18a and the second sensing element layer 18b. The conductor track portion segments 26b are preferably oriented perpendicular to the first substrate surface 20a. Accordingly, it is advantageous that at least one tap contact point 16 in the other conductor tracks 24b that electrically connect the third sensing element 14c to the fourth sensing element 14d is also a center tap contact point 16. In particular, the center tap contact 16 of the conductor track 24b can be arranged within its conductor track section 26b oriented perpendicular to the first substrate surface 20a. Sensing elements 14a to 14d can, if necessary, be regularly or intersectingly connected to each other via their center tap contact 16. This allows for potential interception only in one of the sensing element layers 18a or 18b.

[0039] Unlike previous implementations, in Figure 3 In the magnetic sensor device, a first Wheatstone bridge 12a, constructed in a first sensing element layer 18a and including a first sensing element 14a, a third sensing element 14c, a fifth sensing element 14e, and a seventh sensing element 14g, and a second Wheatstone bridge 12b, constructed in a second sensing element layer 18b and including a second sensing element 14b, a fourth sensing element 14d, a sixth sensing element 14f, and an eighth sensing element 14h, are interconnected. A first bridge supply point 27a of the first Wheatstone bridge 12a is located between the first sensing element 14a and the third sensing element 14c, while a second bridge supply point 27b of the first Wheatstone bridge 12a is arranged between the fifth sensing element 14e and the seventh sensing element 14g. Accordingly, the third bridge supply point 27c of the second Wheatstone bridge 12b is located between the second sensing element 14b and the fourth sensing element 14d, while the fourth bridge supply point 27d of the second Wheatstone bridge 12b is arranged between the sixth sensing element 14f and the eighth sensing element 14h.

[0040] Advantageously, the first Wheatstone bridge 12a and the second Wheatstone bridge 12b are interconnected, enabling the implementation of six measurement bridge circuits 28 including the Wheatstone bridges 12a and 12b. Specifically, the first measurement bridge can be configured to have sensing elements 14a-14e-14g-14c, the second measurement bridge to have sensing elements 14a-14b-14c-14d, the third measurement bridge to have sensing elements 14a-14f-14h-14c, the fourth measurement bridge to have sensing elements 14e-14g-14h-14f, the fifth measurement bridge to have sensing elements 14e-14b-14g-14d, and the sixth measurement bridge to have sensing elements 14b-14f-14h-14d. Therefore, the first bridge supply point 27a is electrically connected to the terminal of the first power supply voltage V1 via the first switch 30a, while the third bridge supply point 27c is electrically connected to the other terminal of the first power supply voltage V1 via the second switch 30b. The first bridge supply point 27a is additionally connected to the terminal of the second power supply voltage V2 via the third switch 30c, and its other terminal is connected to the second bridge supply point 27b via the fourth switch 30d. The second bridge supply point 27b is further connected to the terminal of the third power supply voltage V3 via the fourth switch 30d, and the fourth bridge supply point 27d is connected to the other terminal of the third power supply voltage V3 via the fifth switch 30e. Furthermore, the fourth bridge supply point 27d is electrically connected to the terminal of the fourth power supply voltage V4 via the sixth switch 30f, and its other terminal is connected to the third bridge supply point 27c via the second switch 30b. Figure 3 The measurement bridge device 10 thus realizes six "configurable measurement bridges," which can be achieved by opening and closing switches 30a to 30f. Depending on which of the switches 30a to 30f is closed, different bridging potentials can be intercepted and evaluated. This allows for averaging and thus also provides greater robustness against stray fields.

[0041] about Figure 3 For other features, properties, and advantages of magnetic sensor devices, see the section on Figure 1 and 2 Description of the implementation method.

[0042] Figure 4 A schematic diagram of a fourth embodiment of the magnetic sensor device is shown.

[0043] Figure 4 The magnetic sensor device as relative to Figure 3 An extended embodiment of the implementation has two 6-measurement bridge circuits 28a and 28b, wherein the sensing axes 22a and 22b of the first 6-measurement bridge circuit 28a are perpendicular to the orientation of the sensing axes 22a and 22b of the second 6-measurement bridge circuit 28b.

[0044] about Figure 4 For other features, properties, and advantages of magnetic sensor devices, see the section on Figures 1 to 3 Description of the implementation method.

[0045] Figure 5 A schematic diagram of a fifth embodiment of the magnetic sensor device is shown.

[0046] Unlike the previously implemented embodiments, in Figure 5 In the magnetic sensor device, the first sensing element 14a and the second sensing element 14b are interconnected as the first voltage divider of the measuring bridge 12, and the third sensing element 14c and the fourth sensing element 14d are interconnected as the second voltage divider of the (same) measuring bridge 12. Furthermore, at least these four sensing elements 14a to 14d are electrically connected to a common power supply voltage V.

[0047] The first sensing element type, at least the first sensing element 14a and possibly the third sensing element 14c, is different from the second sensing element type, at least the second sensing element 14b and possibly the fourth sensing element 14d. This is merely an example. Figure 5 In the magnetic sensor device, sensing axes 22a and 22b are oriented parallel to each other. Optionally, at least the first sensing element 14a and possibly a third sensing element 14c may have a first sensitivity and / or a first measurement range along the first sensing axis 22a that is equal to or not equal to the second sensitivity and / or a second measurement range along the second sensing axis 22b of at least the second sensing element 14b and possibly a fourth sensing element 14d.

[0048] about Figure 5 For other features, properties, and advantages of magnetic sensor devices, see the section on Figures 1 to 4 Description of the implementation method.

[0049] Figure 6 A schematic diagram of a sixth embodiment of the magnetic sensor device is shown.

[0050] exist Figure 6 In this embodiment, the first sensing element 14a and the third sensing element 14c are electrically integrated in the first voltage divider of the Wheatstone bridge 12, while the second sensing element 14b and the fourth sensing element 14d are electrically integrated in the second voltage divider of the (same) Wheatstone bridge 12. The bridging potential is intercepted at tap contact points 16 distributed on the two planes and can be easily performed. Figure 6 The magnetic sensor device is also robust to stray fields, especially non-uniform magnetic fields. Because it allows for the determination of the same location of magnetic field components in the extended plane of its sensing elements 14a to 14d, redundant measurements can be achieved.

[0051] about Figure 6 For other features, properties, and advantages of magnetic sensor devices, see the section on Figures 1 to 5 Description of the implementation method.

[0052] Figure 7 A schematic diagram of a seventh embodiment of the magnetic sensor device is shown.

[0053] exist Figure 7 In the magnetic sensor device, a first sensing element layer 18a at least partially covers the first substrate surface 20a of the first substrate 20 and / or at least one layer 32 that at least partially covers the first substrate surface 20a. A second sensing element layer 18b is formed on at least one intermediate layer 34 that at least partially covers the first sensing element layer 18a, such that the at least one intermediate layer 34 is at least partially covered. For example, in... Figure 7 As can also be seen, the first substrate 20 may be equipped with an evaluation circuit / evaluation device 36 for further processing / evaluating the bridging potential intercepted at the measurement bridge device 10 to determine / specify the at least one measurement value. The evaluation circuit 36 ​​may, for example, be constructed in at least one layer 32 located on the surface 20a of the first substrate.

[0054] about Figure 7 For other features, properties, and advantages of magnetic sensor devices, see the section on Figures 1 to 6 Description of the implementation method.

[0055] Figure 8 A schematic diagram of an eighth embodiment of the magnetic sensor device is shown.

[0056] exist Figure 8In the magnetic sensor device, the first sensing element layer 18a also at least partially covers the first substrate surface 20a and / or at least one layer 32 that at least partially covers the first substrate surface 20a. However, the second sensing element layer 18b is formed on the second substrate surface 38a of the second substrate 38 and / or at least one (not outlined) layer that at least partially covers the second substrate surface 38a. Furthermore, at least one bonding connection 40 is constructed between the first outer surface of the first sensing element layer 18a facing away from the first substrate surface 20a and the second outer surface of the second sensing element layer 18b facing away from the second substrate surface 38a. This at least one bonding connection 40 is particularly advantageous because relatively small displacements, especially less than or equal to 1 µm (micrometers), and relatively small tilts, especially less than or equal to 1°, can be achieved between the sensing element layers 18a and 18b by performing a bonding process. Compared to alternative bonding processes or deposition methods, bonding processes generally provide smaller displacements and smaller tilts. By arranging the two sensing element layers 18a and 18b such that they are aligned with each other away from the outward direction of the first / second substrate surface 20a or 38a, the sensing elements 14a to 14d can be additionally advantageously arranged close to each other.

[0057] about Figure 8 For other features, properties, and advantages of magnetic sensor devices, see the section on Figures 1 to 7 Description of the implementation method.

[0058] Figure 9 A schematic diagram of a ninth embodiment of the magnetic sensor device is shown.

[0059] Unlike the previously described implementation method, in Figure 9 In the magnetic sensor device, at least one bonding connection 40 is constructed between the outer surface of the first sensing element layer 18a facing away from the first substrate surface 20a and the other substrate surface 38b of the second substrate 38 facing away from the second substrate surface 38a. Regarding Figure 9 For other features, properties, and advantages of magnetic sensor devices, see the section on Figures 1 to 8 Description of the implementation method.

[0060] As Figure 8 and 9 In an alternative extension of the implementation, each of substrates 20 and 38 may also be equipped with an evaluation circuit / evaluation device 36. This provides advantageous high redundancy for the magnetic sensor device implemented in this way in relation to possible failures of the evaluation circuit / evaluation device 36.

[0061] All the magnetic sensor devices described above can be used for a variety of purposes. Possible applications include, for example, automotive or consumer applications. Each magnetic sensor device can be used, for example, as an electronic compass, angle sensor, position sensor, rotational speed sensor, distance sensor, step sensor, and / or current intensity sensor, particularly as a current intensity sensor for monitoring vehicle drive systems. Depending on the application, the magnetic field strength and orientation of the magnetic field can be measured with the aid of the appropriate magnetic sensor device.

[0062] Figure 10 A flowchart illustrating an embodiment of a method for manufacturing a magnetic sensor device is shown.

[0063] In the manufacturing method described herein, a measuring bridge device is formed to create the subsequent magnetic sensor device. For this purpose, the measuring bridge device is designed using at least one measuring bridge and at least four sensing elements such that, during operation of the subsequent magnetic sensor device, considering the bridging potential intercepted at the tap contact points of the measuring bridge device, at least one measured value regarding the magnetic field present at the measuring bridge device can be determined / has been determined. In method step S1, a first sensing element of the at least four sensing elements is arranged in a first sensing element layer on and / or above a first substrate surface of a first substrate, the first sensing element being of a first sensing element type and having a first sensitivity and / or a first measurement range along a pre-given first sensing axis. Additionally, in method step S2, a second sensing element of the at least four sensing elements is arranged in a second sensing element layer, the second sensing element layer being spaced apart from the first sensing element layer on one side of the first sensing element layer in a spatial direction perpendicular to the orientation of the first substrate surface. The second sensing element is configured such that its second sensing element type differs from the first sensing element type, its second sensing axis differs from the first sensing axis, and / or its second sensitivity and / or second measurement range differs from the first sensitivity and / or first measurement range. Method steps S1 and S2 can be performed in any order and may at least partially overlap.

Claims

1. A magnetic sensor device, comprising: - A first substrate (20) having a first substrate surface (20a); and - At least one measuring bridge device (10), the measuring bridge device comprising at least one measuring bridge (12, 12a, 12b), having at least four sensing elements (14a to 14h), and designed such that at least one measurement value of the magnetic field present at the measuring bridge device (10) can be determined, taking into account the bridging potential intercepted at the tap contact point (16) of the measuring bridge device (10); in, The first sensing element (14a) of the at least four sensing elements (14a to 14h) is arranged in a first sensing element layer (18a) on and / or above the first substrate surface (20a), the first sensing element being a first sensing element type and having a first sensitivity and / or a first measurement range along a pre-given first sensing axis (22a). The second sensing element (14b) of the at least four sensing elements (14a to 14h) is arranged in the second sensing element layer (18b), and the second sensing element layer (18b) is located on one side of the first sensing element layer (18a) at a distance from the first sensing element layer (18a) in a spatial direction perpendicular to the orientation of the first substrate surface (20a). Its features are, The second sensing element type of the second sensing element (14b) is different from the first sensing element type of the first sensing element (14a), the second sensing axis (22b) of the second sensing element (14b) is different from the first sensing axis (22a) of the first sensing element (14a), and / or the second sensitivity and / or the second measurement range of the second sensing element (14b) is different from the first sensitivity and / or the first measurement range of the first sensing element (14a).

2. The magnetic sensor device according to claim 1, wherein, The first sensing element (14a) is interconnected with at least one of the at least four sensing elements (14a to 14h) arranged in the first sensing element layer (18a) as a third sensing element (14c) to form a first voltage divider of the measurement bridge (12) or the first measurement bridge (12a), and the second sensing element (14b) is interconnected with at least one of the at least four sensing elements (14a to 14h) arranged in the second sensing element layer (18b) as a second voltage divider of the measurement bridge (12) or the second measurement bridge (12b). Wherein, all sensing elements (14a, 14c, 14e, 14g) of the first voltage divider or the first measuring bridge (12a) are of the first sensing element type and have the first sensitivity and / or the first measurement range along the pre-given first sensing axis (22a), and all sensing elements (14b, 14d, 14f, 14h) of the second voltage divider or the second measuring bridge (12b) are of the second sensing element type and have the second sensitivity and / or the second measurement range along the pre-given second sensing axis (22b).

3. The magnetic sensor device according to claim 1 or 2, wherein, The first sensing element type is different from the second sensing element type, and the first sensing element type and the second sensing element type are respectively from a set including TMR sensing elements, GMR sensing elements, AMR sensing elements and / or Hall sensing elements.

4. The magnetic sensor device according to any one of the preceding claims, wherein, The first sensing axis (22a) is oriented at an angle between 60° and 120° relative to the second sensing axis (22b).

5. The magnetic sensor device according to any one of claims 1 to 3, wherein, The first sensing axis (22a) is oriented with a tilt angle of less than or equal to 10° relative to the second sensing axis (22b), wherein the first sensitivity is different from the second sensitivity, and / or the first measurement range is different from the second measurement range.

6. The magnetic sensor device according to any one of the preceding claims, wherein, The first sensing element layer (18a) at least partially covers the first substrate surface (20a) and / or at least one layer (32) at least partially covers the first substrate surface (20a), wherein the second sensing element layer (18b) at least partially covers at least one intermediate layer (34) at least partially covers the first sensing element layer (18a).

7. The magnetic sensor device according to any one of claims 1 to 5, wherein, The first sensing element layer (18a) at least partially covers the first substrate surface (20a) and / or at least one first layer (32) at least partially covers the first substrate surface (20a), wherein the second sensing element layer (18b) at least partially covers the second substrate surface (38a) of the second substrate (38) and / or at least one second layer at least partially covers the second substrate surface (38a), wherein at least one bonding connection (40) is formed between the first outer surface of the first sensing element layer (18a) facing away from the first substrate surface (20a) and the second outer surface of the second sensing element layer (18b) facing away from the second substrate surface (38a).

8. The magnetic sensor device according to any one of claims 1 to 5, wherein, The first sensing element layer (18a) at least partially covers the first substrate surface (20a) and / or at least one first layer (32) at least partially covers the first substrate surface (20a), wherein the second sensing element layer (18b) at least partially covers the second substrate surface (38a) of the second substrate (38) and / or at least one second layer at least partially covers the second substrate surface (38a), wherein at least one bonding connection (40) is formed between the outer surface of the first sensing element layer (18a) facing away from the first substrate surface (20a) and the other substrate surface (38b) of the second substrate (38) facing away from the second substrate surface (38a).

9. The magnetic sensor device according to any one of the preceding claims, wherein, The center tap contact (16) is configured as a tap contact (16) in the conductor rail (24a) that electrically connects the first sensing element (14a) and the second sensing element (14b).

10. The magnetic sensor device according to any one of the preceding claims, wherein, At least the four sensing elements (14a to 14h) are electrically connected to a common power supply voltage (V).

11. A method for manufacturing a magnetic sensor device, comprising the following steps: A measuring bridge device (10) is formed, the measuring bridge device being designed with at least one measuring bridge (12, 12a, 12b) and at least four sensing elements (14a to 14h) such that, taking into account the bridging potential intercepted at the tap contact point (16) of the measuring bridge device (10), at least one measurement value of the magnetic field present at the measuring bridge device (10) can be determined; in, The first sensing element (14a) of the at least four sensing elements (14a to 14h) is arranged in a first sensing element layer (18a) on and / or above the first substrate surface (20a) of the first substrate (20) (S1), the first sensing element being a first sensing element type and having a first sensitivity and / or a first measurement range along a pre-given first sensing axis (22a). The second sensing element (14b) of the at least four sensing elements (14a to 14h) is arranged in the second sensing element layer (18b), and the second sensing element layer is located on one side of the first sensing element layer (18a) at a distance from the first sensing element layer (18a) in a spatial direction perpendicular to the orientation of the first substrate surface (20a). Its features are, The second sensing element (14b) is configured such that the second sensing element type of the second sensing element (14b) is different from the first sensing element type of the first sensing element (14a), the second sensing axis (22b) of the second sensing element (14b) is different from the first sensing axis (22a) of the first sensing element (14a), and / or the second sensitivity and / or the second measurement range of the second sensing element (14b) is different from the first sensitivity and / or the first measurement range of the first sensing element (14a) (S2).

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