Method for coating waveguide electrodes in cooperation with waveguide mode doping

Abstract

The present application relates to the technical field of optoelectronic devices and microwave devices, in particular to a method for cooperation of waveguide electrode coating and doping technology and waveguide mode, comprising: in a target area on the surface of a metal electrode, a nano-composite multifunctional coating layer is prepared by using an atomic layer deposition or electrophoretic deposition-thermal isostatic pressing integrated process, the coating layer at least comprising a conductive transition bottom layer and a ferroelectric / piezoelectric adaptive function layer; a modified doping layer with three-dimensional gradient concentration distribution is formed inside the electrode matrix below the target area; the dielectric constants of the coating layer and the modified doping layer continuously transition at the interlayer interface, forming a gradient refractive index distribution from the surface of the coating layer to the inside of the electrode matrix, so as to realize overall regulation of the electric field distribution in the waveguide and preferentially excite a preset order of waveguide mode. The present application realizes the dielectric property cooperative matching of the waveguide electrode coating layer and the doping layer, and significantly improves the excitation efficiency of the target waveguide mode.

Description

Technical Field

[0001] This invention relates to the field of optoelectronic devices and microwave devices, specifically a method for coordinating waveguide electrode coating and doping techniques with waveguide modes. Background Technology

[0002] Waveguide devices have wide applications in optical communication, radar systems, phased array antennas, and other fields. The distribution of electromagnetic wave modes (waveguide modes) propagating within a waveguide directly affects the device's insertion loss, bandwidth, beam quality, and polarization characteristics. Traditional waveguides typically rely on their geometry (such as waveguide size and shape) to select the operating mode, but this method is difficult to adjust once manufactured and has limited ability to suppress higher-order modes.

[0003] In recent years, modulating the electric field distribution by fabricating functional coatings on waveguide electrodes or introducing doped layers into the electrode substrate has become a research hotspot. For example, transparent conductive oxide films are used as buffer layers, or the dielectric properties near the electrode surface are altered through ion implantation. However, in existing technologies, the coating layer and the doped layer are designed independently, and there is a lack of synergistic matching of dielectric properties between them, resulting in limited electric field distribution modulation effects and difficulty in accurately exciting waveguide modes of a predetermined order. Summary of the Invention

[0004] The purpose of this invention is to provide a method for coordinating waveguide electrode coating and doping technology with waveguide modes, so as to solve the problems of dielectric property mismatch between the coating layer on the waveguide electrode surface and the substrate doping layer, insufficient electric field distribution control capability, and difficulty in preferentially exciting preset order waveguide modes in the prior art.

[0005] To achieve the above objectives, the present invention provides the following technical solution: a method for coordinating waveguide mode with waveguide electrode coating and doping technology, comprising:

[0006] In the target area on the surface of the metal electrode, a nanocomposite multifunctional coating layer is prepared by atomic layer deposition or electrophoretic deposition-thermal isostatic pressing integrated process. The coating layer includes at least a conductive transition layer and a ferroelectric / piezoelectric adaptive functional layer.

[0007] Inside the electrode substrate below the target region, a modified doped layer with a three-dimensional gradient concentration distribution is formed by plasma immersion ion implantation or additive manufacturing process.

[0008] The dielectric constants of the coating layer and the modified doped layer transition continuously at the interlayer interface, forming a gradient refractive index distribution from the surface of the coating layer to the interior of the electrode substrate, thereby achieving overall control of the electric field distribution within the waveguide and preferentially exciting waveguide modes of a preset order.

[0009] Preferably, the conductive transition layer is a gradient refractive index transparent conductive oxide film, made of aluminum-doped zinc oxide or indium-doped tin oxide; its doping concentration changes continuously along the thickness direction, so that the conductivity decreases from the side near the metal electrode substrate to the side near the ferroelectric / piezoelectric adaptive functional layer, while the dielectric constant or refractive index changes accordingly, realizing the impedance matching transition from the metal conductive region to the ferroelectric functional layer.

[0010] Preferably, the ferroelectric / piezoelectric adaptive functional layer contains ferroelectric nanoparticles selected from barium titanate or lead zirconate titanate, with a particle size of 10-50 nm and a volume fraction of 5-30%. When the local electric field strength increases, the ferroelectric nanoparticles undergo polarization saturation, the effective dielectric constant of the functional layer increases, and the electric field is redistributed to weaken the local electric field concentration. When the electric field strength decreases, the polarization state is restored, and the dielectric constant returns to its initial value.

[0011] Preferably, the ferroelectric / piezoelectric adaptive functional layer spontaneously adjusts its dielectric constant when the electric field or stress changes; the modified doped layer forms a dielectric constant gradient distribution within the electrode substrate; the dielectric constant gradient of the coating layer and the doped layer together constitute a monotonically increasing or decreasing refractive index profile from the surface of the functional layer to the interior of the electrode substrate.

[0012] Preferably, the additive manufacturing process is selective laser melting or electron beam melting. Through a multi-powder channel switching system, while printing the metal electrode substrate layer by layer, the mixing ratio of different powder components is changed in real time to construct a modified doped layer with a three-dimensional gradient concentration distribution in the target area. The concentration of doped elements in the modified doped layer changes continuously in a gradient along the depth direction and / or the lateral direction of the electrode substrate.

[0013] Preferably, the multi-powder channel switching system uses three or more powder sources with different doping concentrations. By adjusting the powder feeding rate ratio of each channel in real time, the doping element concentration change rate between adjacent layers is 5-20% / layer, so that the doping element concentration can be continuously changed along the three-dimensional space during the layer-by-layer printing process.

[0014] Preferably, when atomic layer deposition is used, the deposition temperature and precursor pulse time are configured to achieve a continuous transition of dielectric constant between the conductive transition layer and the ferroelectric / piezoelectric adaptive functional layer; when an integrated electrophoretic deposition-thermal isostatic pressing process is used, the electrophoretic deposition voltage, thermal isostatic pressing temperature and pressure are configured to densify the coating layer and maintain the gradient refractive index structure.

[0015] Preferably, when using plasma immersion ion implantation, the implantation voltage, implantation dose, and implantation element are configured to form a region below the electrode substrate surface with a dielectric constant gradient change rate greater than 20% / μm.

[0016] Preferably, when the metal electrode is a dual-electrode structure, the coating thickness, doping depth, and micro / nano structure pattern on the upper and lower electrodes are asymmetrically designed. By adjusting the difference in the degree of electric field weakening on the upper and lower sides, the position of the mode field centroid and the polarization characteristics of the output beam can be controlled.

[0017] Preferably, the waveguide is suitable for optical wave, millimeter wave or microwave bands; the material of the metal electrode is selected from gold, silver, copper, aluminum or their alloys; the total thickness of the nanocomposite multifunctional coating layer is 50nm-5μm, wherein the thickness of the conductive transition layer accounts for 10%-40%.

[0018] Compared with the prior art, the beneficial effects of the present invention are:

[0019] This invention eliminates electric field reflection and mode coupling loss caused by dielectric abrupt changes in the traditional structure by continuously transitioning the dielectric constant of the coating layer and the doped layer. By setting a ferroelectric / piezoelectric adaptive functional layer, this invention can autonomously adjust the dielectric constant when the electric field changes, suppress local electric field concentration, and improve the device's withstand voltage and stability.

[0020] The three-dimensional gradient doped layer of this invention achieves a continuous change in dielectric constant along the depth and / or lateral direction within the electrode substrate, forming a monotonically increasing or decreasing refractive index profile together with the coating layer, which can accurately match the field distribution requirements of the target waveguide mode. The asymmetric dual-electrode design of this invention can further control the mode field centroid and polarization characteristics of the output beam, thus broadening the application scenarios of the device. Attached Figure Description

[0021] Figure 1 This is a process flow diagram of the present invention;

[0022] Figure 2 This is a graph showing the dielectric constant distribution of the present invention with depth.

[0023] Figure 3 This is a comparison diagram of the excitation efficiency of different waveguide modes of the present invention;

[0024] Figure 4 This is a comparison diagram of the dielectric constant distribution at the interface between the coating layer and the doped layer of the present invention. Detailed Implementation

[0025] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0026] The structure of the method for coordinating waveguide mode with waveguide electrode coating and doping technology provided by this invention is as follows: Figure 1 As shown, it includes: First, in the target area on the surface of the metal electrode, a nanocomposite multifunctional coating layer is prepared by an integrated process of atomic layer deposition or electrophoretic deposition-thermal isostatic pressing. The coating layer includes at least a conductive transition underlayer and a ferroelectric / piezoelectric adaptive functional layer.

[0027] Specifically, such as Figure 1 As shown, the conductive transition layer is a gradient refractive index transparent conductive oxide film, made of aluminum-doped zinc oxide or indium-doped tin oxide. Its doping concentration changes continuously along the thickness direction, causing the conductivity to decrease from the side closer to the metal electrode substrate to the side closer to the ferroelectric / piezoelectric adaptive functional layer. At the same time, the dielectric constant or refractive index changes accordingly, realizing the impedance matching transition from the metal conductive region to the ferroelectric functional layer.

[0028] The ferroelectric / piezoelectric adaptive functional layer contains ferroelectric nanoparticles selected from barium titanate or lead zirconate titanate, with a particle size of 10-50 nm and a volume fraction of 5-30%. When the local electric field strength increases, the ferroelectric nanoparticles undergo polarization saturation, the effective dielectric constant of the functional layer increases, and the electric field is redistributed to weaken the local electric field concentration. When the electric field strength decreases, the polarization state is restored, and the dielectric constant returns to its initial value. The ferroelectric / piezoelectric adaptive functional layer spontaneously adjusts its dielectric constant when the electric field or stress changes.

[0029] Second, such as Figure 1 As shown, a modified doped layer with a three-dimensional gradient concentration distribution is formed inside the electrode substrate below the target region by plasma immersion ion implantation or additive manufacturing process.

[0030] Specifically, the additive manufacturing process is selective laser melting or electron beam melting. Through a multi-powder channel switching system, while printing the metal electrode substrate layer by layer, the mixing ratio of different powder components is changed in real time to construct a modified doped layer with a three-dimensional gradient concentration distribution in the target area. The concentration of dopants in the modified doped layer changes continuously along the depth direction and / or lateral direction of the electrode substrate. The modified doped layer forms a dielectric constant gradient distribution in the electrode substrate.

[0031] The multi-powder channel switching system uses three or more powder sources with different doping concentrations. By adjusting the powder feeding rate ratio of each channel in real time, the doping element concentration change rate between adjacent layers is 5-20% / layer, so that the doping element concentration can be continuously changed along the three-dimensional space during the layer-by-layer printing process.

[0032] Third, such as Figure 1As shown, the dielectric constants of the coating layer and the modified doped layer transition continuously at the interlayer interface, forming a gradient refractive index distribution from the surface of the coating layer to the interior of the electrode substrate, thereby achieving overall control of the electric field distribution within the waveguide and preferentially exciting waveguide modes of a preset order; the dielectric constant gradients of the coating layer and the doped layer together constitute a monotonically increasing or decreasing refractive index profile from the surface of the functional layer to the interior of the electrode substrate.

[0033] In this invention, when atomic layer deposition is employed, the deposition temperature and precursor pulse time are configured to achieve a continuous transition of dielectric constant between the conductive transition layer and the ferroelectric / piezoelectric adaptive functional layer. When using an integrated electrophoretic deposition-thermal isostatic pressing (HIP) process, the electrophoretic deposition voltage, HIP temperature, and pressure are configured to densify the coating layer and maintain its gradient refractive index structure. When employing plasma immersion ion implantation, the implantation voltage, implantation dose, and implantation element are configured to form a region below the electrode substrate surface with a dielectric constant gradient change rate greater than 20% / μm.

[0034] When the metal electrode has a dual-electrode structure, the coating thickness, doping depth, and micro / nano structure pattern on the upper and lower electrodes are asymmetrically designed. By adjusting the difference in the weakening degree of the electric field on the upper and lower sides, the position of the mode field centroid and the polarization characteristics of the output beam are controlled. The waveguide of this invention is suitable for optical wave, millimeter wave, or microwave bands; the material of the metal electrode is selected from gold, silver, copper, aluminum, or their alloys; the total thickness of the nanocomposite multifunctional coating layer is 50nm-5μm, of which the thickness of the conductive transition layer accounts for 10%-40%.

[0035] Example 1

[0036] This embodiment specifically features a single-electrode structure. The modified doped layer is implanted via ALD+ plasma immersion ion implantation, as detailed below. Figure 2 As shown, a copper plate with a purity of 99.99% was selected as the metal electrode substrate during preparation, with dimensions of 20mm × 10mm × 1mm. After ultrasonic cleaning with acetone, ethanol, and deionized water, it was dried with nitrogen. To prepare the modified doped layer, the cleaned copper substrate was placed in the vacuum chamber of a plasma immersion ion implantation device with a background vacuum level better than 5 × 10⁻⁶. -4 Nitrogen gas was introduced as the dopant source gas, and the radio frequency power was 500W to generate nitrogen plasma. The injection voltage was -30kV, the injection pulse width was 20μs, the frequency was 500Hz, and the injection dose was 5×10⁻⁶ Pa. 16 ions / cm 2 After treatment, a nitrogen-doped gradient region with a depth of about 0.8 μm is formed below the surface of the copper substrate, with the nitrogen concentration gradually decreasing from the highest value at the surface (about 8 at%) to the substrate concentration at a depth of 1.5 μm.

[0037] In preparing the nanocomposite multifunctional coating, an atomic layer deposition system was used. Aluminum-doped zinc oxide thin films were prepared using diethylzinc (DEZ) and water as precursors as the conductive transition layer. The aluminum doping source was trimethylaluminum (TMA), and the deposition temperature was 200℃. By adjusting the DEZ / TMA pulse cycle ratio (TMA:DEZ=1:9 for the first 50 cycles, TMA:DEZ=1:30 for the next 50 cycles, with a gradual ratio in between), the aluminum doping concentration was continuously varied from high (approximately 5 at%) to low (approximately 1 at%) along the thickness direction, resulting in a film thickness of approximately 150 nm.

[0038] A ferroelectric / piezoelectric adaptive functional layer was deposited on a conductive transition substrate: barium titanate nanoparticles (average particle size 25 nm) were co-deposited with an alumina substrate, with the ferroelectric nanoparticles accounting for 20% of the volume. The nanoparticles were kept uniformly dispersed during deposition. The total thickness of the functional layer was approximately 250 nm.

[0039] In this embodiment, as measured by a spectroscopic ellipsometry, a continuous monotonically decreasing dielectric constant profile is formed from the functional layer surface (dielectric constant approximately 18) → conductive transition layer (dielectric constant gradually decreasing from 25 to 12) → modified doped layer (dielectric constant gradually decreasing from 12 to 6) → copper substrate (dielectric constant approximately 5), with no discontinuous jumps at the interface.

[0040] During waveguide mode testing, this electrode is assembled onto the inner wall of one side of a rectangular waveguide (WR-90, operating band 8-12GHz). Input TE 10 The mode excitation signal was used to measure the power distribution of different modes at the waveguide output. The results show that the target TE 10 The transmission power of the mode reaches 87%, and the non-target mode TM 11 and TE 20 The total power contribution is less than 5%. Simulation of the electric field distribution shows that the uniformity of the electric field on the electrode surface is improved by approximately 62% compared to the untreated copper electrode.

[0041] Example 2 (Asymmetric structure with upper and lower dual electrodes, additive manufacturing + electrophoretic deposition - hot isostatic pressing)

[0042] like Figure 4 As shown, this embodiment specifically employs an asymmetric structure with upper and lower dual electrodes, using additive manufacturing + electrophoretic deposition-hot isostatic pressing. Specifically, during the additive manufacturing and gradient doping of the electrode substrate, a selective laser melting device is used. The powder source consists of copper powder (the main component) and oxygen powder (a dopant, added in the form of copper oxide). Three powder channels are configured: channel A is pure copper, channel B is Cu-0.5wt%, and channel C is Cu-2.0wt%. During the layer-by-layer printing process, different powder feed rate curves are set for the upper and lower electrodes respectively.

[0043] Upper electrode: From the bottom of the substrate to the surface, the ratio of channels B and C gradually decreases, forming a decreasing oxygen concentration gradient from 1.2 at% (bottom) to 0.3 at% (surface); Lower electrode: From the bottom of the substrate to the surface, the ratio of channels B and C gradually increases, forming an increasing oxygen concentration gradient from 0.2 at% (bottom) to 1.5 at% (surface). The layer thickness is 50 μm, and the oxygen concentration change rate between adjacent layers is approximately 10-15% / layer.

[0044] In the preparation of the coating layer, the electrophoretic deposition solution consisted of indium-doped tin oxide nanoparticles (15 nm in diameter) and lead zirconate titanate nanoparticles (30 nm in diameter) dispersed in isopropanol at a volume ratio of 1:1. 0.5 g / L polyethyleneimine was added as a dispersant. The deposition voltage for the upper electrode was 300 V for 90 seconds, and the deposition voltage for the lower electrode was 150 V for 60 seconds. After deposition, hot isostatic pressing (HIP) was performed under a nitrogen atmosphere: temperature 950 °C, pressure 150 MPa, and holding for 2 hours. The resulting total coating layer thickness was approximately 2.8 μm for the upper electrode and approximately 1.6 μm for the lower electrode, with the conductive transition substrate accounting for 25% and 35% of the thickness, respectively. The asymmetric effect of this embodiment is achieved by mounting the upper and lower electrodes on the upper and lower inner walls of the waveguide, respectively. By adjusting the asymmetric coating and doping design, the electric field is concentrated on one side of the waveguide cross-section. Test results show that the mode field centroid of the output beam deviates from the center position by approximately 0.32 mm (waveguide height 1.2 mm), and the linear polarization degree increases from 0.72 to 0.94. Target TE 10 The excitation efficiency of the model is 82%, which is 15 percentage points higher than that of the symmetrical structure.

[0045] Example 3

[0046] In this embodiment, to further verify the crucial role of the synergistic feature of 'continuous transition of dielectric constant between the coating layer and the doped layer at the interlayer interface' in the waveguide mode excitation effect, the following comparative example is provided. For example... Figure 3 As shown, Comparative Examples 1 to 3 each omitted or disrupted a key component of the aforementioned synergistic structure, while the remaining materials, preparation processes, and testing conditions remained consistent with Example 1. Details are as follows.

[0047] Comparative Example 1 (no coating layer, only ion implantation doping): The same copper substrate as in Example 1 was used, and only plasma immersion ion implantation was performed (parameters same as in Example 1). No nanocomposite multifunctional coating layer was prepared. All other assembly and testing conditions were the same as in Example 1. Test results: Target TE 10 The transmission power ratio of the mode is only 51%, TM 11 and TE 20 The total power of the mode accounts for 28%. The electric field distribution shows a significant abrupt change in field strength near the surface, with the refractive index jumping directly from air to the surface of the doped layer. The lack of a transition layer leads to severe mode coupling loss.

[0048] Comparative Example 2 (with a coating layer, no doped layer, and the coating layer has a single dielectric constant) used the same copper substrate as Example 1, without ion implantation. An alumina thin film with a single dielectric constant (400 nm thick, constant dielectric constant 8) was directly deposited using atomic layer deposition (ALD), without a conductive transition underlayer or a ferroelectric adaptive functional layer. All other assembly and testing conditions were the same as in Example 1. Test results: Target TE 10 The transmission power ratio of the mode is only 43%, TM 11 The mode ratio is as high as 31%. Due to the sudden jump in dielectric constant between the coating layer and the copper substrate (8→5), significant reflection and mode conversion occur.

[0049] Comparative Example 3 (with a coating layer and a doped layer, but with a discontinuous dielectric constant at the interface) is basically the same as Example 1, except that a gradual change in doping concentration is not set when preparing the conductive transition layer; instead, a constant aluminum doping concentration (3 at%) is used, resulting in a constant dielectric constant (approximately 15) for the conductive transition layer. The modified doped layer still has a gradient dielectric constant (12→6), but there is a dielectric constant jump (15→12) at the interface between the coating layer and the doped layer. Test results: Target TE 10 The mode transmission power ratio is 68%, which is between Comparative Example 1 / 2 and Example 1. The residual reflection loss at the interface is about 0.8dB, and the electric field distribution shows local disturbances.

[0050] sample Coating layer doped layer <![CDATA[Target TE 10 Efficiency]]> <![CDATA[TM 11 +TE 20 Percentage Interface reflection loss (dB) Comparative Example 1 none have 51% 28% 1.9 Comparative Example 2 It has (a single dielectric constant). none 43% 37% 2.3 Comparative Example 3 (Constant doping) have 68% 14% 0.8 Example 1 It has (gradient + ferroelectricity) (PIII) 87% <5% <0.1 Example 2 It is (asymmetric) (Additive manufacturing) is available. 82% 9% 0.15

[0051] By comparison, it can be clearly revealed that: having only a doped layer without a coating layer (Comparative Example 1), having only a coating layer without a doped layer (Comparative Example 2), and having both but with discontinuous interface dielectric constants (Comparative Example 3) cannot achieve the target waveguide mode priority excitation and electric field homogenization effect achieved by the present invention.

[0052] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

Claims

1. A method for coordinating waveguide mode with waveguide electrode coating and doping techniques, characterized in that, include: In the target area on the surface of the metal electrode, a nanocomposite multifunctional coating layer is prepared by atomic layer deposition or electrophoretic deposition-thermal isostatic pressing integrated process. The coating layer includes at least a conductive transition layer and a ferroelectric / piezoelectric adaptive functional layer. Inside the electrode substrate below the target region, a modified doped layer with a three-dimensional gradient concentration distribution is formed by plasma immersion ion implantation or additive manufacturing process. The dielectric constants of the coating layer and the modified doped layer transition continuously at the interlayer interface, forming a gradient refractive index distribution from the surface of the coating layer to the interior of the electrode substrate, thereby achieving overall control of the electric field distribution within the waveguide and preferentially exciting waveguide modes of a preset order.

2. The method for coordinating waveguide mode with waveguide electrode coating and doping technology according to claim 1, characterized in that: The conductive transition layer is a gradient refractive index transparent conductive oxide film, made of aluminum-doped zinc oxide or indium-doped tin oxide. Its doping concentration changes continuously along the thickness direction, so that the conductivity decreases from the side closer to the metal electrode substrate to the side closer to the ferroelectric / piezoelectric adaptive functional layer. At the same time, the dielectric constant or refractive index changes accordingly, realizing the impedance matching transition from the metal conductive region to the ferroelectric functional layer.

3. The method for coordinating waveguide mode with waveguide electrode coating and doping technology according to claim 1, characterized in that: The ferroelectric / piezoelectric adaptive functional layer contains ferroelectric nanoparticles selected from barium titanate or lead zirconate titanate, with a particle size of 10-50 nm and a volume fraction of 5-30%. When the local electric field strength increases, the ferroelectric nanoparticles undergo polarization saturation, the effective dielectric constant of the functional layer increases, and the electric field is redistributed to weaken the local electric field concentration. When the electric field strength decreases, the polarization state is restored, and the dielectric constant returns to its initial value.

4. The method for coordinating waveguide mode with waveguide electrode coating and doping technology according to claim 3, characterized in that: The ferroelectric / piezoelectric adaptive functional layer spontaneously adjusts its dielectric constant when the electric field or stress changes; the modified doped layer forms a dielectric constant gradient distribution within the electrode substrate; the dielectric constant gradients of the coating layer and the doped layer together constitute a monotonically increasing or decreasing refractive index profile from the surface of the functional layer to the interior of the electrode substrate.

5. The method for coordinating waveguide mode with waveguide electrode coating and doping technology according to claim 1, characterized in that: The additive manufacturing process is selective laser melting or electron beam melting. Through a multi-powder channel switching system, while printing the metal electrode substrate layer by layer, the mixing ratio of different powder components is changed in real time to construct a modified doped layer with a three-dimensional gradient concentration distribution in the target area. The concentration of doping elements in the modified doped layer varies in a continuous gradient along the depth direction and / or lateral direction of the electrode substrate.

6. The method for coordinating waveguide mode with waveguide electrode coating and doping technology according to claim 5, characterized in that: The multi-powder channel switching system uses three or more powder sources with different doping concentrations. By adjusting the powder feeding rate ratio of each channel in real time, the doping element concentration change rate between adjacent layers is 5-20% / layer, so that the doping element concentration can be continuously changed along the three-dimensional space during the layer-by-layer printing process.

7. The method for coordinating waveguide mode with waveguide electrode coating and doping technology according to claim 1, characterized in that: When atomic layer deposition is used, the deposition temperature and precursor pulse time are configured to achieve a continuous transition of dielectric constant between the conductive transition bottom layer and the ferroelectric / piezoelectric adaptive functional layer; When using an integrated electrophoretic deposition-thermal isostatic pressing process, the electrophoretic deposition voltage, thermal isostatic pressing temperature, and pressure are configured to densify the coating layer and maintain a gradient refractive index structure.

8. The method for coordinating waveguide mode with waveguide electrode coating and doping technology according to claim 1, characterized in that: When using plasma immersion ion implantation, the implantation voltage, implantation dose, and implantation element are configured to create a region below the electrode substrate surface with a dielectric constant gradient change rate greater than 20% / μm.

9. The method for coordinating waveguide mode with waveguide electrode coating and doping technology according to claim 1, characterized in that: When the metal electrode is a dual-electrode structure, the coating thickness, doping depth and micro / nano structure pattern on the upper and lower electrodes are asymmetrically designed. By adjusting the difference in the degree of electric field weakening on the upper and lower sides, the position of the mode field centroid and polarization characteristics of the output beam can be controlled.

10. The method for coordinating waveguide mode with waveguide electrode coating and doping technology according to claim 1, characterized in that: The waveguide is suitable for optical, millimeter-wave, or microwave bands; the material of the metal electrode is selected from gold, silver, copper, aluminum, or their alloys; the total thickness of the nanocomposite multifunctional coating layer is 50nm-5μm, of which the thickness of the conductive transition layer accounts for 10%-40%.

Images