Modular structure

Abstract

A module structure includes a substrate, a patterned stack, a patterned adhesive layer, and a semiconductor component. The substrate defines opposite first and second surfaces. The patterned stack is disposed on the first surface of the substrate and includes a patterned light guiding layer, a patterned conductive layer, or a combination thereof, to transmit optical signals, electrical signals, or both. The patterned adhesive layer is disposed between the substrate and the patterned stack. The semiconductor component is disposed on the first surface of the substrate and coupled to the patterned stack, and the semiconductor component is coplanar with the patterned adhesive layer and the patterned stack. The module structure of the present invention reduces the area of the signal transmission layer covering the substrate, improves the utilization of the substrate surface, and reduces the signal transmission loss by the design of the patterned stack.

Description

Technical Field

[0001] This invention relates to a modular structure, and more particularly to a modular structure with an optical path. Background Technology

[0002] As the amount of data exchanged between optoelectronic modules and external systems increases, traditional electrical signal transmission interfaces are facing bottlenecks, including limitations in transmission speed, electromagnetic interference, and excessive power consumption. Therefore, the industry has begun to adopt optical communication as an alternative. Optical communication offers advantages such as high transmission speed, strong anti-interference capabilities, and low power consumption; however, integrating optical communication into optoelectronic modules still presents numerous technical challenges, such as transmission distance, where longer transmission distances lead to significant signal loss during transmission. Therefore, the industry urgently needs a new module structure that can effectively shorten the optical signal transmission path while maintaining structural simplicity and ease of manufacturing. Summary of the Invention

[0003] The purpose of this invention is to provide a modular structure that can be integrated into the structure of an existing substrate, effectively shortening the optical signal transmission distance and significantly reducing optical signal loss.

[0004] This invention provides a modular structure including a substrate, a patterned stacked structure, a patterned bonding layer, and a semiconductor component. The substrate defines opposing first and second surfaces. The patterned stacked structure is disposed on the first surface of the substrate, for example, on at least a portion of the first surface; the patterned stacked structure includes a patterned light-guiding layer, a patterned conductive layer, or a combination thereof, and transmits optical signals, electrical signals, or both. The patterned bonding layer is disposed between the substrate and the patterned stacked structure. The semiconductor component is disposed on the first surface of the substrate and coupled to the patterned stacked structure, and the semiconductor component, the patterned bonding layer, and the patterned stacked structure are coplanar.

[0005] This invention also provides a module structure, including a substrate, a patterned stacked structure, a patterned bonding layer, one or more vacant areas, and a plurality of semiconductor components. The substrate defines opposing first and second surfaces. The patterned stacked structure is disposed on the first surface of the substrate, for example, on at least a portion of the first surface; the patterned stacked structure includes a patterned light-guiding layer, a patterned conductive layer, or both. The patterned bonding layer is disposed between the substrate and the patterned stacked structure, transmitting optical signals, electrical signals, or both. One or more vacant areas are distributed on the first surface of the substrate at locations where no patterned stacked structure is disposed. A plurality of semiconductor components are disposed on the first surface of the substrate and located in one or more vacant areas of the substrate, and coupled to the patterned stacked structure; furthermore, these semiconductor components are coplanar with the patterned bonding layer and the patterned stacked structure, and two of these semiconductor components can communicate with each other via electrical signals and / or optical signals.

[0006] In one embodiment, the graphical stacking structure defines the stacking profile, which is defined by laser cutting.

[0007] In one embodiment, the graphical stack structure defines a stack outline, the graphical attachment layer defines an attachment outline, and the attachment outline approximates the stack outline along a direction perpendicular to a first surface of the substrate.

[0008] In one embodiment, along a projection direction perpendicular to the first surface of the substrate, the subsequent profile is larger than the stacked profile.

[0009] In one embodiment, the patterned stacking structure defines the coverage ratio of the substrate, which is no more than 50%.

[0010] In one embodiment, the patterned adhesive layer defines a first adhesive layer surface and a second adhesive layer surface opposite to each other. The first adhesive layer surface is connected to the patterned stack structure, and the second adhesive layer surface is connected to the substrate. The surface roughness of the first adhesive layer surface is less than that of the second adhesive layer surface.

[0011] In one embodiment, the patterned stacked structure includes a substrate, a patterned light guide layer, a patterned conductive layer, or both disposed on the substrate.

[0012] In one embodiment, the substrate includes at least one of polyimide and resin.

[0013] In one embodiment, the coefficient of thermal expansion of the substrate along a direction parallel to the first surface of the substrate is less than 17 ppm.

[0014] In one embodiment, the coefficient of thermal expansion of the substrate along a direction parallel to the first surface of the substrate is less than 10 ppm.

[0015] In one embodiment, the patterned light guide layer and the semiconductor component each have a light inlet / outlet that can be optically coupled to each other.

[0016] In one embodiment, the patterned light guide layer defines a first light guide layer surface and a second light guide layer surface opposite to each other, as well as a side edge connecting the first and second light guide layer surfaces, with the light inlet and outlet of the patterned light guide layer located at the side edge.

[0017] In one embodiment, the semiconductor component defines a first component surface and a second component surface opposite to each other, as well as a side edge connecting the first and second component surfaces, with the light inlet and outlet of the semiconductor component located at the side edge.

[0018] In one embodiment, the patterned light guide layer includes an optical fiber, which includes a core and a cladding layer covering the core, with the core aligned with and optically coupled to the light inlet and outlet of the semiconductor device.

[0019] In one embodiment, the patterned light guide layer includes an optical waveguide, which includes an optical transmission layer and an optical reflection layer disposed on at least one side of the optical transmission layer. The optical transmission layer is aligned with and optically coupled to the light inlet and outlet of the semiconductor device.

[0020] In one embodiment, a plurality of conductive pads are disposed on the first surface of the substrate, and semiconductor components are electrically connected to these conductive pads.

[0021] In one embodiment, the semiconductor component includes an electronic integrated circuit, a photonic integrated circuit, a graphics processing unit, a central processing unit, an application-specific integrated circuit, a switch, or a combination thereof.

[0022] In one embodiment, the module structure further includes an interlayer on which semiconductor components are disposed.

[0023] In one embodiment, a plurality of conductive pads are disposed on the first surface of the substrate, and an intermediary is electrically connected to these conductive pads.

[0024] In one embodiment, the patterned stacked structure includes a patterned conductive layer, which includes one or more conductive lines, at least a portion of which has a line spacing of no more than 50 micrometers.

[0025] In one embodiment, the patterned stacked structure includes a patterned conductive layer, which includes one or more conductive lines, at least a portion of which has a line spacing of no more than 30 micrometers.

[0026] In one embodiment, the patterned stacked structure includes a patterned conductive layer, which includes one or more conductive lines, at least a portion of which has a line spacing of no more than 15 micrometers.

[0027] In one embodiment, the patterned stacked structure includes a patterned conductive layer, which includes one or more conductive lines, at least a portion of which has a thickness of no more than 20 micrometers.

[0028] In one embodiment, the patterned stacked structure includes a patterned conductive layer, which includes one or more conductive lines, at least a portion of which has a thickness of no more than 10 micrometers.

[0029] In one embodiment, the substrate comprises silicon or a silicon-containing material.

[0030] In one embodiment, the substrate is a single-layer substrate or a multi-layer substrate, and includes glass, resin, ceramic, glass ceramic, polyimide, or includes at least one or more of the above materials.

[0031] In one embodiment, the substrate is a single-layer substrate or a multilayer substrate, and includes bismaleimide triazine (BT), glass-reinforced epoxy laminate (FR4), or at least one or more of the above materials.

[0032] In one embodiment, the substrate includes at least one of low-temperature co-fired ceramic (LTCC), medium-temperature co-fired ceramic (MTCC), or high-temperature co-fired ceramic (HTCC) substrates.

[0033] In summary, the module structure of the present invention, through the design of a patterned stacked structure, sets a patterned light guide layer or conductive layer in a local area on the substrate for transmitting optical or electrical signals. This reduces the area of ​​the signal transmission layer (or structure) covering the substrate, thereby improving the utilization rate of the substrate surface. In addition to reducing the setting distance between components, it can also reduce signal loss due to long-distance transmission. Attached Figure Description

[0034] Figure 1A and Figure 1B These are top and side views of an embodiment of the module structure of the present invention.

[0035] Figures 2 to 10 This is a side view schematic diagram of different embodiments of the module structure of the present invention.

[0036] Figures 11A to 11G This is a schematic diagram of the module structure manufacturing method of the present invention.

[0037] Figure 12A and Figure 12B This is a top view of a temporary structure obtained during the fabrication of the module structure of the present invention. Detailed Implementation

[0038] The module structure according to a preferred embodiment of the present invention will be described below with reference to the accompanying drawings, wherein the same elements will be described with the same reference numerals.

[0039] The advantages and features of the present invention, as well as the methods of implementing the invention, will be clearly illustrated in the following embodiments with reference to the accompanying drawings. However, the invention can be embodied in many different forms and should not be construed as being limited to the embodiments described below. Rather, the embodiments disclosed below are only intended to make this specification clear and complete, and to fully convey the scope of the invention to those skilled in the art. The invention should be defined only by the scope of the claims; therefore, well-known constituent elements, operations, and techniques are not described in detail in the embodiments to avoid obscuring the technical features of the invention. Throughout the specification, the same or similar elements are indicated by the same or similar reference numerals. Throughout the specification, when an element is referred to as being “connected” to another element, the element may be “directly or indirectly mechanically connected” to the other element, or “electrically connected” to the other element, and one or more intermediate elements may be inserted therein. It is further understood that in this specification, the terms “comprising” or “including” specify the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, and / or components, or combinations thereof. The term “and / or” indicates the possibility of intersection or union. Unless otherwise defined, all terms (including technical and scientific terms) used in this specification shall have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. Further, terms or words (e.g., terms or words as defined in the claims or common dictionaries) shall be interpreted as having the same meaning as they have in the description of the relevant art, and shall not be construed as having an ideal or overly rigorous meaning unless expressly defined in this specification.

[0040] Please see Figure 1A and Figure 1B The module structure 100 of the present invention includes: a substrate 10, a patterned stacked structure 20, a patterned bonding layer 30, and a semiconductor component 40.

[0041] The substrate 10 defines opposing first surfaces S11 and second surfaces S12. A patterned stacked structure 20 is disposed on the first surface S11 of the substrate 10; in this embodiment, the patterned stacked structure 20 is disposed on a portion of the first surface S11 of the substrate 10. The patterned stacked structure 20 defines opposing first stacked structure surfaces S21 and second stacked structure surfaces S22, with the second stacked structure surface S22 facing the first surface S11 of the substrate 10. The patterned stacked structure 20 includes a patterned light guide layer 21 and a patterned conductive layer 22 (e.g., ...). Figure 3(As shown) or both, to transmit signal 23, which may include optical signal, electrical signal, or both. A patterned bonding layer 30 is disposed between the substrate 10 and the patterned stacked structure 20; wherein, the patterned bonding layer 30 defines opposing first bonding layer surfaces S31 and second bonding layer surfaces S32, the second bonding layer surface S32 of the patterned bonding layer 30 is connected to the first surface S11 of the substrate 10, and the first bonding layer surface S31 of the patterned bonding layer 30 is connected to the second stacked structure surface S22 of the patterned stacked structure 20. A semiconductor component 40 is disposed on the first surface S11 of the substrate 10 and coupled to the patterned stacked structure 20, for example, by optical coupling or electrical coupling; furthermore, along a direction X parallel to the first surface S11 of the substrate 10, the semiconductor component 40, the patterned bonding layer 30, and the patterned stacked structure 20 are coplanar.

[0042] In one embodiment, substrate 10 may be a single-layer substrate or a multi-layer substrate, and may include silicon or silicon-containing materials, glass, resin, ceramics, glass ceramics, polyimide, bismaleimide triazine (BT), or glass-reinforced epoxy laminate (FR4), or one or more of the above. Furthermore, substrate 10 may also include at least one of low-temperature co-fired ceramic (LTCC), medium-temperature co-fired ceramic (MTCC), or high-temperature co-fired ceramic (HTCC) substrates.

[0043] Additionally, the semiconductor component 40 includes a photonic integrated circuit (PIC) 41, an electronic integrated circuit (EIC) 42, a graphics processing unit (GPU) 43, a central processing unit (CPU), an application-specific integrated circuit (ASIC), a switch, or includes at least one of the above, but is not limited thereto; the semiconductor component 40 may also include passive components. Here, the semiconductor component 40 may be a photonic integrated circuit (PIC) 41 as an example.

[0044] Additionally, the patterned stack structure 20 defines a stack contour 20CT, and the patterned bonding layer 30 defines a bonding contour 30CT. Along the direction Z perpendicular to the first surface S11 of the substrate 10, the projection of the bonding contour 30CT approximates the projection of the stack contour 20CT. However, in some embodiments, the projection of the bonding contour 30CT is greater than the projection of the stack contour 20CT along the direction Z perpendicular to the first surface S11 of the substrate 10, but this is not the only example.

[0045] The aforementioned stacked contour 20CT or subsequent contour 30CT is obtained through a laser cutting process. The contour can be a regular shape or an irregular shape. Regular shapes include shapes with a center of symmetry or an axis of symmetry, such as circles, squares, rectangles, trapezoids, rhombuses, etc. Irregular shapes include other shapes besides regular shapes.

[0046] In addition, in some embodiments, the patterned stack structure 20 defines a coverage ratio for the substrate 10, which is no more than 50%; that is, when the patterned stack structure 20 is disposed on the first surface S11 of the substrate 10, the proportion of the area of ​​the first surface S11 covered by it is no more than 50%.

[0047] Furthermore, the surface roughness of the first adhesive layer surface S31 of the patterned adhesive layer 30 is less than the surface roughness of the second adhesive layer surface S32.

[0048] See Figure 1B The patterned stacked structure 20 may further include a substrate 24, a patterned light guide layer 21 or a patterned conductive layer 22 or both (see [link to documentation]). Figure 3 The substrate 24 is disposed on the substrate 24; in addition, the material of the substrate 24 includes at least one of polyimide and resin, but is not limited thereto.

[0049] Please see Figure 1A and 1B In this embodiment, the patterned stacked structure 20 includes a patterned light guide layer 21, which has light inlets / outlets 211, and the semiconductor component 40 also has light inlets / outlets 44, and the two are optically coupled to each other; in this example, the semiconductor component 40 is a photonic integrated circuit (PIC) 41. Figure 1B For example, the patterned light guide layer 21 defines a side edge SE, with its two ends connected to the surface S21 of the first light guide layer and the surface S22 of the second light guide layer, respectively. The light inlet / outlet 211 of the patterned light guide layer 21 is located at the side edge SE. The patterned light guide layer 21 may include an optical fiber, which includes a core 212 and a cladding layer 213 covering the core 212. The core 212 is aligned with the light inlet / outlet 211 and optically coupled to the light inlet / outlet 44 of the semiconductor component 40.

[0050] Furthermore, such as Figure 1B As shown, a circuit layer TR may be disposed on the first surface S11, the second surface S12, or within the substrate 10. The semiconductor component 40 (photonic integrated circuit 41) may be connected to the circuit layer TR of the substrate 10 via a conductive structure 50. In one embodiment, the conductive structure 50 includes conductive pads 51 and conductive material 52. The conductive pads 51 may be disposed on the first surface S11 of the substrate 10 and the side of the semiconductor component 40 facing the substrate 10, and the conductive pads 51 are electrically connected to each other via the conductive material 52, thereby electrically connecting the semiconductor component 40 to the circuit layer TR of the substrate.

[0051] See Figure 2 The patterned stacked structure 20A of the module structure 200 includes a patterned light guide layer 21A, which includes an optical waveguide. The optical waveguide includes an optical transmission layer 214 and an optical reflective layer 215 disposed on at least one side of the optical transmission layer 214. The light inlet / outlet 211 of the patterned light guide layer 21A is located at the optical transmission layer 214, and the light inlet / outlet 211 is aligned with and optically coupled to the light inlet / outlet 44 of the semiconductor component 40. In some embodiments, the optical reflective layer 215 of the patterned stacked structure 20A may be integrated into the substrate 24.

[0052] Please see Figure 3 The patterned stacked structure 20B of module structure 300 includes a patterned light guide layer 21A and a patterned conductive layer 22. The patterned light guide layer 21A includes an optical waveguide, which includes an optical transmission layer 214 and an optical reflection layer 215 disposed on at least one side of the optical transmission layer 214. The light inlet / outlet 211 of the patterned light guide layer 21A is aligned with and optically coupled to the light inlet / outlet 44 of the semiconductor component. The patterned conductive layer 22 is disposed between the patterned light guide layer 21A and the patterned bonding layer 30. Figure 3 In this embodiment, the patterned conductive layer 22 is a single conductive layer, but is not limited thereto. Furthermore, in this embodiment, the patterned conductive layer 22 and the patterned light guide layer 21A are bonded via an adhesive layer 25.

[0053] In some embodiments, the patterned stacked structures 20B, 20C, 20D, 20E, and 20F include a patterned conductive layer 22A. The patterned conductive layer 22A may include one or more conductive lines 221, and at least a portion of the conductive lines 221 has a line spacing of no more than 50 micrometers, or at least a portion of the conductive lines 221 has a line spacing of no more than 30 micrometers; furthermore, at least a portion of the conductive lines 221 has a line spacing of no more than 15 micrometers, or at least a portion of the conductive lines 221 has a thickness of no more than 20 micrometers, or at least a portion of the conductive lines 221 has a thickness of no more than 10 micrometers.

[0054] Please see Figure 4The patterned stacked structure 20C of the module structure 400 includes a patterned light guide layer 21A and a patterned conductive layer 22A. The patterned light guide layer 21A is an optical waveguide, which includes a light transmission layer 214 and a light reflection layer 215 disposed on at least one side of the light transmission layer 214. The light inlet / outlet 211 of the light transmission layer 214 is aligned with and optically coupled to the light inlet / outlet 44 of the semiconductor component 40. The patterned conductive layer 22A is disposed between the patterned light guide layer 21A and the patterned bonding layer 30. In this embodiment, the patterned conductive layer 22A is a multilayer conductive layer, such as redistribution layers. Furthermore, the patterned conductive layer 22A and the patterned light guide layer 21A are bonded together via an adhesive layer 25.

[0055] Please see Figure 5 Module structure 500 and Figure 4 The overall structure of the module structure 400 is similar to that of the module structure 500. The differences between the two include the patterned stacking structure 20D of the module structure 500 and the patterned light guide layer 21A being arranged between the patterned conductive layer 22A and the patterned bonding layer 30.

[0056] Please see Figure 6A Module structure 600A and Figure 4 / Figure 5 The overall structures of module structures 400 and 500 are similar. The main difference is in the patterned stacking structure 20E of module structure 600A. The patterned light guide layer 21A and the patterned conductive layer 22B are arranged in a coplanar manner. For example, in Figure 6, both are arranged on the substrate 24, but this is not a limitation. Both can also be arranged on the patterned bonding layer 30.

[0057] Please see again. Figure 6B and Figure 6CThe module structure 600B further includes one or more recessed regions 11, which are disposed on the first surface S11 of the substrate 10, but the patterned stacked structure 20F is not disposed within the recessed region 11. The bottom surface S11A of the recessed region 11 can be regarded as part of the first surface S11 of the substrate 10, and it also has a similar function to the first surface S11. The semiconductor component 40 can be correspondingly disposed within the recessed region 11. This design can reduce the height difference between the semiconductor component 40 and the patterned stacked structure 20F. In this embodiment, the patterned stacked structure 20F only includes the patterned conductive layer 22A. However, the actual implementation of the present invention is not limited to this. The patterned stacked structure 20 in this structure can include many different configurations. For example, the patterned stacked structure 20 of the module structure 600B can further include a patterned light guide layer (not shown in the figure). Because the semiconductor component 40 is disposed in the recessed region 11, but the patterned stacked structure 20 (especially the patterned light guide layer) is disposed in the non-recessed region of the substrate 10, the thickness of the cladding layer or light reflective layer of the patterned light guide layer can be reduced, so that it can be coupled with the semiconductor component 40. Please refer to [further details to be added]. Figure 6C The patterned conductive layer 22A of the module structure 600B further includes an active element AC, a passive element PC, or both. The active element AC may include, but is not limited to, a thin-film transistor, and the passive element may include, but is not limited to, an integrated passive device. In addition, both the thin-film transistor and the integrated passive device can be fabricated using thin-film technology.

[0058] Please see Figure 7 The module structure 700 also defines one or more vacant areas VA, which are distributed on the first surface S11 of the substrate 10 and refer to the positions where no patterned stacked structure 20 is disposed. The patterned stacked structure 20 shown in this figure has a wider distribution range. In addition, multiple semiconductor components 40 can be disposed on the first surface S11 of the substrate 10 and disposed in this or these vacant areas VA. Multiple semiconductor components 40 can be connected to the patterned stacked structure 20 by optical coupling and / or electrical coupling. In addition, two semiconductor components 40 can also communicate with each other by electrical signals and / or optical signals.

[0059] Please see again. Figure 8 and Figure 9 The module structures 800 and 900 also include an intermediary material 60, and the semiconductor components 40 are disposed on or in the intermediary material 60. Figure 8 The semiconductor component 40 shown includes a photonic integrated circuit (PIC) 41, while Figure 9The semiconductor component 40 includes, but is not limited to, a photonic integrated circuit (PIC) 41 and an electronic integrated circuit (EIC) 42. A plurality of conductive pads 51 may be disposed on the first surface S11 of the substrate 10, and the interposer 60 is electrically connected to the conductive pads 51 via conductive material 52. The interposer 60 also includes one or more through-holes VIA, which may serve as conductive vias, but are not limited thereto.

[0060] Please see again. Figure 10 The module structure 1000 also includes a substrate 10, a patterned stacked structure 20, a patterned bonding layer 30, and semiconductor components. Its overall structure is similar to the aforementioned embodiment. Its most significant feature is that the patterned stacked structure 20G includes a fixed portion FIX and an epitaxial portion EXT. The fixed portion FIX is the area where the patterned stacked structure 20G is bonded to the patterned bonding layer 30, and the epitaxial portion EXT is the area where the patterned stacked structure 20G is not bonded to the patterned bonding layer 30. Furthermore, the patterned stacked structure 20G is defined as being bonded to the patterned bonding layer 30. One side of the region of the patterned bonding layer 30 is the fixed end FIXE, and the other side of the epitaxial portion EXT of the patterned stacked structure 20G is the free end FRE. The projection of the free end FRE of the patterned stacked structure 20G along the direction perpendicular to the first surface S11 of the substrate 10 will exceed the projection of the side edge of the substrate 10 along the direction perpendicular to its first surface S11. The patterned stacked structure 20G also includes a patterned light guide layer 21A and a patterned conductive layer 22. In some embodiments, the patterned conductive layer 22 can be a fan-out structure. In this fan-out structure, the line spacing of the lines arranged near the fixed end FIXE will be smaller than the line spacing of the lines arranged near the free end FRE.

[0061] Please see Figures 11A to 11G The present invention provides one method for manufacturing the module structure, wherein the patterned stacked structure 20 includes a patterned light guide layer 21A, and the patterned light guide layer 21A includes a waveguide. Figure 11A A double-layer substrate structure is provided, in which a flexible substrate 240 is disposed on a rigid substrate RS. Both the flexible substrate 240 and the rigid substrate RS are non-patterned substrates, and the flexible substrate can be directly or indirectly bonded to the rigid substrate RS. One bonding method includes bonding the flexible substrate 240 to the rigid substrate RS via a thin adhesive layer. Furthermore, the flexible substrate 240 can be, but is not limited to, a polyimide substrate. Next, as... Figure 11B As shown, the light-reflecting layer 2150A is deployed on Figure 11A On the flexible substrate 240; such as Figure 11CAs shown, the light transmission layer 2140 is further disposed on the light reflection layer 2150A; then, another light reflection layer 2150B is further disposed on the light reflection layer 2150A and the light transmission layer 2140, so that the light transmission layer 2140 is completely covered by the light reflection layer 2150 and forms an integrated structure.

[0062] One method for fabricating the patterned light guide layer 21 of the modular structure of the present invention is in Figures 11B to 11D In any of the states shown, the light reflecting layer 2150 and the corresponding light transmitting layer 2140 are graphically represented. For example, Figure 11B The light-reflecting layer 2150 disposed on the flexible substrate 240 can be a patterned light-reflecting layer, or... Figure 11B The light-reflecting layer 2150 in the middle is a patternless light-reflecting layer, and in Figure 11C or Figure 11D The steps are graphically represented in other ways; in summary, the light-reflecting layer 2150 and the covering light-transmitting layer 2140 are... Figure 11E The production steps shown have previously been visualized; Figure 11E The steps shown involve using a laser lift-off method to remove the patterned light guide layer 21 (including the light reflection layer 215 and the light transmission layer 214) from... Figure 11D Removed from the structure. One method for fabricating the patterned light guide layer 21 of the modular structure of the present invention is in Figures 11B to 11D In any of the states shown, the light reflecting layer 2150 and the corresponding light transmission layer 2140 are in a non-patterned state, and... Figure 11E In the process, the laser lift-off step and the patterning step are performed simultaneously in the light-reflecting layer 2150 and the corresponding light-transmitting layer 2140, thereby forming a patterned light-guiding layer 21 (including the light-reflecting layer 215 and the light-transmitting layer 214). In the two methods described above, in the case of... Figure 11E After completing the steps shown, you can obtain the following: Figure 12A The temporary structure shown.

[0063] Next, as Figure 11F As shown, the adhesive layer is directly bonded to one side of the patterned light guide layer 21 to form the patterned bonding layer 30 of the present invention, and the patterned bonding layer 30 then bonds the patterned light guide layer 21 to the substrate 10; at this time, the outline of the patterned bonding layer 30 will be the same as the outline of the patterned light guide layer 21. Figure 11G Another method for bonding the patterned light guide layer 21 to the substrate 10 is that the adhesive layer is first bonded to one side of the substrate, and then the patterned light guide layer 21 is bonded to the adhesive layer and then bonded to the substrate 10. Figure 11F or Figure 11GThe patterned adhesive layer 30 can be formed after the adhesive layer is bonded to the substrate 10, or after the patterned light guide layer 21 is bonded to the substrate 10. In this case, the outline of the patterned adhesive layer 30 can be the same as the outline of the patterned light guide layer 21, or slightly larger than the outline of the patterned light guide layer 21.

[0064] when Figure 11G After completing the steps shown, you can obtain the following: Figure 12B The structure shown is temporary; then, semiconductor components 40, or other active or passive components, etc., can be disposed at other locations on the first surface S11 of the substrate 10, thereby completing the present invention as described above. Figure 1A The module structure shown.

[0065] As stated above, it should be understood that various embodiments of the present invention have been described in the specification for illustrative purposes, and various modifications can be made without departing from the scope and spirit of the invention. Therefore, the various embodiments of the present invention are not intended to limit the true scope and spirit of the invention.

[0066] The above description is illustrative only and not restrictive. Any equivalent modifications or alterations made without departing from the spirit and scope of this invention should be included within the scope of the appended claims.

Claims

1. A modular structure, comprising: Substrate, defining opposing first and second surfaces; A patterned stacked structure is disposed on the first surface of the substrate; wherein the patterned stacked structure includes a patterned light guide layer, a patterned conductive layer or a combination thereof, and transmits optical signals, electrical signals or a combination thereof; A patterned bonding layer is disposed between the substrate and the patterned stacked structure; and A semiconductor component is disposed on the first surface of the substrate and coupled to the patterned stacked structure; wherein the semiconductor component, the patterned bonding layer, and the patterned stacked structure are disposed in the same plane.

2. The module structure according to claim 1, wherein the graphical stacking structure defines a stacking profile, at least a portion of which is defined by laser cutting.

3. The module structure according to claim 1, wherein the patterned stacking structure defines a coverage ratio for the substrate, and the coverage ratio is not greater than 50%.

4. The module structure according to claim 1, wherein the patterned bonding layer defines a first bonding layer surface and a second bonding layer surface opposite to each other, the first bonding layer surface being connected to the patterned stacked structure, and the second bonding layer surface being connected to the substrate; the surface roughness of the first bonding layer surface is less than the surface roughness of the second bonding layer surface.

5. The module structure according to claim 1, wherein the patterned stacked structure includes a substrate, and the patterned light guide layer, the patterned conductive layer, or both are disposed on the substrate.

6. The module structure according to claim 1, wherein the patterned light guide layer and the semiconductor component each have a light inlet / outlet that can be optically coupled to each other.

7. The module structure according to claim 6, wherein the patterned light guide layer defines a first light guide layer surface and a second light guide layer surface opposite to each other and a side edge connecting the first light guide layer surface and the second light guide layer surface, and the patterned light guide layer provides the light inlet and outlet at the side edge.

8. The module structure according to claim 6, wherein the semiconductor component defines opposing first component surfaces and second component surfaces and a side edge connecting the first component surface and the second component surface, and the semiconductor component provides the light inlet / outlet at the side edge.

9. The module structure according to claim 1, wherein a plurality of conductive pads are disposed on the first surface of the substrate, and the semiconductor component is electrically connected to the conductive pads.

10. The module structure according to claim 1, further comprising: Intermediate material, wherein the semiconductor component is disposed on the intermediate material.

11. The module structure according to claim 10, wherein a plurality of conductive pads are disposed on the first surface of the substrate, and the intermediate material is electrically connected to the conductive pads.

12. A modular structure, comprising: Substrate, defining opposing first and second surfaces; A patterned stacked structure is disposed on a portion of the first surface of the substrate; wherein the patterned stacked structure includes a patterned light guide layer, a patterned conductive layer, or both. A patterned bonding layer is disposed between the substrate and the patterned stacked structure to transmit optical signals, electrical signals, or both. One or more vacant areas are distributed on the first surface of the substrate at locations where the patterned stacked structure is not present; and Multiple semiconductor components are disposed on the first surface of the substrate and located in the vacant area; the semiconductor components are coplanar with the patterned bonding layer and the patterned stack structure and coupled to the patterned stack structure, and two of the semiconductor components communicate with each other through electrical signals and / or optical signals.

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