A control method, device and equipment for wafer surface temperature

Abstract

The application provides a wafer surface temperature control method, device and equipment, the method comprises the following steps: obtaining the corresponding relationship between the wafer lifting rod height and the wafer surface temperature; according to the corresponding relationship and the wafer surface target temperature, the wafer lifting rod target height matched with the wafer surface target temperature is determined; the wafer lifting rod height is adjusted to the wafer lifting rod target height.In the scheme, the corresponding relationship between the wafer lifting rod height and the wafer surface temperature is determined in advance, so that when the wafer surface temperature needs to be controlled to reach a target temperature, the height of the wafer lifting rod can be directly adjusted according to the corresponding relationship, that is, the wafer surface temperature can be controlled to the target temperature, and the yield loss caused by the contact heat conduction can be effectively avoided.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment control manufacturing, and specifically to a method, apparatus, and equipment for controlling the surface temperature of a wafer. Background Technology

[0002] In traditional solutions, contact heat conduction is typically used to indirectly control the temperature of the wafer surface on the heat plate by controlling the temperature of the heat plate.

[0003] However, under the above scheme, the time for the hot plate to heat up and down is relatively long, which seriously affects the production capacity of semiconductor equipment. Summary of the Invention

[0004] The purpose of this invention is to provide a method, apparatus, and device for controlling wafer surface temperature. Based on the correspondence between the height of the wafer lifting rod and the wafer surface temperature, this invention directly controls the wafer surface temperature by adjusting the height of the wafer lifting rod, which helps to avoid the impact on production capacity caused by contact heat conduction.

[0005] To achieve this objective, the present invention adopts the following technical solution: In a first aspect, this application provides a method for controlling the surface temperature of a wafer, the method comprising: Obtain the relationship between the height of the wafer riser and the wafer surface temperature; Based on the aforementioned correspondence and the target temperature of the wafer surface, determine the target height of the wafer lifting rod that matches the target temperature of the wafer surface; Adjust the height of the wafer lifting rod to the target height.

[0006] In some embodiments, obtaining the correspondence between the height of the wafer riser and the wafer surface temperature includes: Under the target conditions, obtain sample data of wafer riser height; Measure the wafer surface temperature sample data that corresponds one-to-one with the wafer lifting rod height sample data; Data fitting is performed on the sample data of the wafer riser height and the sample data of the wafer surface temperature to obtain a fitting function of the wafer riser height and the wafer surface temperature. The fitting function is used to indicate the correspondence between the wafer riser height and the wafer surface temperature. The target conditions include stable temperature conditions and environmental conditions.

[0007] In some embodiments, the method further includes: Training samples are constructed based on the wafer riser height sample data and the wafer surface temperature sample data. The training samples are used to train the temperature control model. The temperature control model is used to input the wafer surface temperature and output the wafer riser height.

[0008] In some embodiments, determining the target height of the wafer lifting rod that matches the target temperature of the wafer surface based on the correspondence and the target temperature of the wafer surface includes: The target temperature of the wafer surface is input into the fitting function to obtain the target height of the wafer lifting rod that matches the target temperature of the wafer surface.

[0009] In some embodiments, adjusting the height of the wafer riser to the target height of the wafer riser includes: The wafer lifting rod is driven by a servo drive motor paired with it until the height of the wafer lifting rod reaches the target height.

[0010] Secondly, this application provides a device for controlling the temperature of a wafer surface, the device comprising: The acquisition module is used to obtain the correspondence between the height of the wafer lifting rod and the surface temperature of the wafer; The determination module is used to determine the target height of the wafer lifting rod that matches the target temperature of the wafer surface, based on the correspondence and the target temperature of the wafer surface. An adjustment module is used to adjust the height of the wafer lifting rod to the target height of the wafer lifting rod.

[0011] Thirdly, this application provides a control program for wafer surface temperature, the program being used to execute the wafer surface temperature control method described above.

[0012] Fourthly, this application provides a semiconductor device for performing the control method for wafer surface temperature as described above.

[0013] Compared with the prior art, the present invention has at least the following beneficial effects: By pre-determining the relationship between the height of the wafer lifting rod and the wafer surface temperature, the height of the wafer lifting rod can be adjusted directly according to the relationship when it is necessary to control the wafer surface temperature to a certain target temperature. This effectively avoids the impact on production capacity caused by contact heat conduction. Attached Figure Description

[0014] Figure 1 This is a schematic diagram illustrating the relative positions of a wafer and a heatsink according to an embodiment of this application; Figure 2This is a flowchart of a method for controlling the surface temperature of a wafer, provided in an embodiment of this application. Figure 3 This is a schematic diagram illustrating the relative positions of a wafer and a heatsink according to an embodiment of this application; Figure 4 This is a schematic diagram illustrating the relative positions of a wafer and a heatsink according to an embodiment of this application; Figure 5 This is a structural block diagram of a wafer surface temperature control device provided in an embodiment of this application. Detailed Implementation

[0015] The technical solution of the present invention will be further illustrated below through specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be construed as limiting the invention in any way.

[0016] For example, such as Figure 1 As shown, in the related technology, the surface temperature of wafer 10 is achieved through contact heat conduction with the heat plate 20. For example, when it is necessary to increase the surface temperature of wafer 10, the temperature of heat plate 20 is increased; or, when it is necessary to decrease the surface temperature of wafer 10, the temperature of heat plate 20 is decreased; thereby achieving indirect control of the temperature of wafer 10 by the temperature of heat plate 20.

[0017] However, under the above-mentioned scheme, there will be some heat loss during the heat conduction process of the hot plate, so the stability of indirect temperature control is poor, and the time required for this indirect heating and cooling method is also long, which seriously affects the production capacity of semiconductor equipment.

[0018] For the reasons mentioned above, this application provides a method for controlling the surface temperature of a wafer, which can effectively solve the problems caused by contact temperature control. Figure 2 A flowchart of a method for controlling the surface temperature of a wafer is shown. This method is performed by a semiconductor device and includes: Step 110: Obtain the correspondence between the height of the wafer riser and the wafer surface temperature; In some embodiments, the semiconductor device pre-stores a correspondence between the height of the wafer riser and the wafer surface temperature. This correspondence is predetermined.

[0019] Optionally, the correspondence is one-to-one.

[0020] When the height of the wafer riser corresponds one-to-one with the wafer surface temperature, the height of the wafer riser can be quickly and uniquely determined based on the required wafer surface temperature, thereby ensuring that the wafer surface temperature can quickly reach the corresponding target value.

[0021] Step 210: Based on the correspondence and the target temperature of the wafer surface, determine the target height of the wafer lifting rod that matches the target temperature of the wafer surface; In some embodiments, the correspondence is a fitting function or stored in the semiconductor device in the form of a mapping table.

[0022] If the correspondence is a mapping table, then the target height of the wafer riser that matches the target temperature of the wafer surface is directly matched by looking up the table.

[0023] If the correspondence is a fitting function, then the target temperature of the wafer surface is substituted into the fitting function to calculate the target height of the wafer lifting rod that matches the target temperature of the wafer surface.

[0024] Step 310: Adjust the height of the wafer riser to the target height.

[0025] Once the target height of the wafer riser is determined to match the target temperature of the wafer surface, adjusting the height of the wafer riser to the target height will ensure that the wafer surface temperature can quickly reach the corresponding target temperature value.

[0026] For example, such as Figure 3 As shown, a lifting rod 30 is provided between the wafer 10 and the hot plate 20. The lifting rod 30 is used to control the lifting height of the wafer 10, or to control the distance between the wafer 10 and the hot plate 20, thereby further controlling the surface temperature of the wafer 10.

[0027] In some embodiments, the wafer lifting arm is driven by a servo drive motor. For example, such as... Figure 4 As shown, the wafer lifting rod 30 is matched with the servo drive motor 40. The servo drive motor 40 is used to drive the wafer lifting rod 30 to move up and down, thereby adjusting the relative distance between the wafer 10 and the hot plate 20, so as to achieve non-contact control of the surface temperature of the wafer 10.

[0028] In summary, the wafer surface temperature control method provided in this application, by pre-determining the correspondence between the height of the wafer lifting rod and the wafer surface temperature, enables the wafer surface temperature to be controlled at the target temperature by directly adjusting the height of the wafer lifting rod according to the correspondence when it is necessary to control the wafer surface temperature to a certain target temperature. This effectively avoids the impact on production capacity caused by contact heat conduction.

[0029] In some embodiments, the relationship between the height of the wafer riser and the wafer surface temperature is determined by a fitting function. Step 110 above includes the following sub-steps: Step 111: Under the target conditions, obtain sample data of the wafer lifting rod height; In this embodiment, the target conditions include stable temperature conditions and environmental conditions. For example, the target conditions are set as follows: the hot plate temperature remains constant at 275°C, and the operating environment is a vacuum environment.

[0030] The reliability of wafer riser height sample data obtained under the same conditions is higher.

[0031] Step 112: Measure the wafer surface temperature sample data corresponding one-to-one with the wafer lifting rod height sample data; In this embodiment, there is a sufficient amount of sample data on the wafer riser height. The wafer surface temperature sample data was obtained by measuring under the same conditions, corresponding one-to-one with the wafer riser height sample data.

[0032] Step 113: Perform data fitting on the sample data of wafer riser height and wafer surface temperature to obtain the fitting function of wafer riser height and wafer surface temperature.

[0033] In some embodiments, based on the acquired wafer riser height sample data and wafer surface temperature sample data, the combined curve function y=ax is used. 3 +bx 2 The data is fitted using +cx+d to obtain the specific values ​​of a, b, c, and d, where x represents the height of the wafer lifting rod and y represents the wafer surface temperature.

[0034] The fitting function is used to indicate the correspondence between the height of the wafer riser and the wafer surface temperature. During the process, if the required wafer surface temperature is known, the target temperature value can be directly substituted into the fitting function to obtain the wafer riser height corresponding to the target temperature value.

[0035] Furthermore, given the fitting function and the target temperature of the wafer surface, the target temperature of the wafer surface can be directly input into the fitting function to obtain the target height of the wafer lifting rod that matches the wafer surface temperature.

[0036] In some embodiments, the wafer riser height sample data and wafer surface temperature sample data described above can also be used to train a temperature control model. The input to the temperature control model is the wafer surface temperature, and the output is the wafer riser height.

[0037] This temperature control model is trained using sample data of wafer surface temperature. The sample data is input into the model, which then outputs a predicted wafer riser height. The predicted riser height is compared with the labeled sample data to calculate the sample error loss. The model parameters are then trained using a backpropagation algorithm based on this sample error loss. After multiple training iterations, such as after 10,000 samples or when the model converges, a temperature control model capable of predicting the riser height based on the wafer surface temperature is obtained.

[0038] The wafer surface temperature control method provided in this application, by pre-setting the correspondence between the height of the wafer lifting rod and the wafer surface temperature, can control the relative distance between the wafer and the hot plate in the vertical direction by changing the wafer position, thereby further controlling the wafer surface temperature. This is beneficial for improving work efficiency, increasing machine capacity, reducing the impact of temperature on sensitive wafer manufacturing processes, and improving product yield.

[0039] This application also provides a device for controlling the temperature of a wafer surface, such as... Figure 5 As shown, the device includes: The acquisition module 510 is used to acquire the relationship between the height of the wafer lifting rod and the surface temperature of the wafer; The determination module 520 is used to determine the target height of the wafer lifting rod that matches the target temperature of the wafer surface, based on the corresponding relationship and the target temperature of the wafer surface. Adjustment module 530 is used to adjust the height of the wafer lifting rod to the target height of the wafer lifting rod.

[0040] Alternatively, it can be understood that the device is used to perform the aforementioned method for controlling the temperature of the wafer surface.

[0041] In this embodiment of the application, the above-described method for controlling the surface temperature of a wafer can be applied to a semiconductor device. The semiconductor device determines the target height of the wafer lifting rod that matches the target temperature of the wafer surface by obtaining the correspondence between the height of the wafer lifting rod and the wafer surface temperature; and then adjusts the height of the wafer lifting rod to the target height, thereby achieving the adjustment of the wafer surface temperature.

[0042] Optionally, the semiconductor device may be an etching device, a resist stripping device, or other device that may apply the above-described methods for controlling the temperature of the wafer surface.

[0043] The applicant declares that the above are merely specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Those skilled in the art should understand that any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention fall within the scope of protection and disclosure of the present invention.

Claims

1. A method for controlling the surface temperature of a wafer, characterized in that, The method includes: Obtain the relationship between the height of the wafer riser and the wafer surface temperature; Based on the aforementioned correspondence and the target temperature of the wafer surface, determine the target height of the wafer lifting rod that matches the target temperature of the wafer surface; Adjust the height of the wafer lifting rod to the target height.

2. The method for controlling wafer surface temperature as described in claim 1, characterized in that, The process of obtaining the relationship between the height of the wafer lifting rod and the wafer surface temperature includes: Under the target conditions, obtain sample data of wafer riser height; Measure the wafer surface temperature sample data that corresponds one-to-one with the wafer lifting rod height sample data; Data fitting is performed on the sample data of the wafer riser height and the sample data of the wafer surface temperature to obtain a fitting function of the wafer riser height and the wafer surface temperature. The fitting function is used to indicate the correspondence between the wafer riser height and the wafer surface temperature. The target conditions include stable temperature conditions and environmental conditions.

3. The method for controlling wafer surface temperature as described in claim 2, characterized in that, The step of determining the target height of the wafer lifting rod that matches the target temperature of the wafer surface based on the correspondence and the target temperature of the wafer surface includes: The target temperature of the wafer surface is input into the fitting function to obtain the target height of the wafer lifting rod that matches the target temperature of the wafer surface.

4. The method for controlling wafer surface temperature as described in claim 2, characterized in that, The method further includes: Training samples are constructed based on the wafer riser height sample data and the wafer surface temperature sample data. The training samples are used to train the temperature control model. The temperature control model is used to input the wafer surface temperature and output the wafer riser height.

5. The method for controlling wafer surface temperature as described in any one of claims 1 to 4, characterized in that, The step of adjusting the height of the wafer lifting rod to the target height includes: The wafer lifting rod is driven by a servo drive motor paired with it until the height of the wafer lifting rod reaches the target height.

6. A device for controlling the surface temperature of a wafer, characterized in that, The device includes: The acquisition module is used to obtain the correspondence between the height of the wafer lifting rod and the surface temperature of the wafer; The determination module is used to determine the target height of the wafer lifting rod that matches the target temperature of the wafer surface, based on the correspondence and the target temperature of the wafer surface. An adjustment module is used to adjust the height of the wafer lifting rod to the target height of the wafer lifting rod.

7. A control program for wafer surface temperature, characterized in that, The program is used to execute the wafer surface temperature control method as described in claims 1 to 5.

8. A semiconductor device, characterized in that, The semiconductor device is used to perform the control method for wafer surface temperature as described in claims 1 to 5.

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