Brain-computer interface packaging method and brain-computer interface

Abstract

The application belongs to the technical field of brain-computer interface, and particularly relates to a brain-computer interface packaging method and a brain-computer interface, which comprises the following steps: providing a shell assembly, wherein the shell assembly comprises an upper cover and a lower cover; loading electronic components into a cavity formed by the upper cover and the lower cover; providing a heat welding tool, wherein the heat welding tool comprises an upper ring and a lower ring, the lower ring is hollowed out along an axis of the lower ring to form a ring hole, and heat is concentrated on a side ring part of the lower ring after preheating; placing the lower cover on the side ring part of the lower ring to concentrate and transmit heat to a joint surface of the lower cover; covering the upper ring on the upper cover and applying pressure to the upper cover to heat weld and joint the joint surface of the upper cover and the lower cover, so that the upper cover and the lower cover are sealingly connected. The application effectively controls the temperature rise of the cavity by using a side heating tool or step-by-step welding of sub-cavities, avoids damage to the battery caused by heat, and realizes high-density electrode sealing and leading-out.

Description

Technical Field

[0001] This invention relates to the field of brain-computer interface technology, and in particular to a brain-computer interface packaging method and a brain-computer interface. Background Technology

[0002] Brain-Machine Interfaces (BMIs), as devices that establish direct information pathways between the brain and external devices, have broad application prospects in fields such as neurorehabilitation and human-computer interaction. A BMI typically consists of an implantable component inside the skull and signal processing and control components located outside the body. The implantable component generally includes a shell, electronic components such as a chip, PCB board, battery, antenna, and charging coil housed within the shell, and electrode wires extending from the shell and implanted into the brain tissue.

[0003] Existing brain-computer interface implants typically use metal materials such as titanium alloys for their outer shells, with electrode wires electrically connected to the electronic components inside the shell via a feedthrough structure. However, because the metal shell shields electromagnetic signals, the antenna and charging coil need to be located outside the shell, resulting in a large product size and complex structure. Furthermore, the number of channels in the feedthrough structure is limited by manufacturing processes, with current mass-produced models generally having fewer than 256 channels, leading to high manufacturing costs.

[0004] To address the aforementioned problems, those skilled in the art have attempted to use polymer materials instead of metal materials to fabricate the outer shell and employ thermal welding to achieve a sealed connection between the upper and lower shells. For example, US patent application US20230148968A1 discloses an implantable device with a shell made of PCTFE (polychlorotrifluoroethylene), which achieves a seal between the wires and the shell by cutting slits in the PCTFE sheet, passing insulated wires through the slits, and then heating and pressing the entire assembly together. However, this solution has serious shortcomings in practical applications: during the thermal welding process, heat needs to be transferred to the entire shell through tooling, resulting in a large amount of heat entering the shell's internal cavity. If a battery is pre-installed in the shell's internal cavity, the temperature of the cavity containing the battery will be heated to far exceeding the battery's operating temperature limit, posing a risk of battery explosion. To solve this problem, existing technologies typically require blowing air into the shell to cool it down and repeatedly cycling through heating and cooling operations, but this leads to a complex, costly, and inefficient thermal welding system, and the internal temperature is difficult to control precisely.

[0005] Therefore, there is an urgent need for a brain-computer interface packaging method and packaging tooling that can achieve efficient, reliable, and low-cost thermal welding packaging of polymer shells without damaging the electronic components inside the shell. Summary of the Invention

[0006] To address the shortcomings of existing technologies, the present invention aims to provide a brain-computer interface packaging method and brain-computer interface, which can achieve efficient, reliable, and low-cost thermal welding packaging of polymer shells without damaging the electronic components inside the shell.

[0007] To achieve the above objectives, the technical solution adopted by the present invention is as follows: A brain-computer interface encapsulation method includes the following steps: A housing assembly is provided, the housing assembly including an upper cover and a lower cover; Electronic components are installed into the cavity formed by the upper cover and the lower cover; A hot welding fixture is provided, the hot welding fixture including an upper ring and a lower ring, and a ring hole is formed by hollowing out along the axis of the lower ring so that the heat is concentrated on the side ring portion of the lower ring after preheating; The lower cover is placed on the side ring of the lower ring, so that heat is concentrated and transferred to the mating surface of the lower cover; The upper ring is placed on the upper cover and pressure is applied to it to heat weld the mating surfaces of the upper cover and the lower cover together, so that the upper cover and the lower cover are sealed together.

[0008] As a preferred technical solution of this application, the upper ring and the lower ring are preheated before the hot welding.

[0009] As a preferred technical solution of this application, the material of the outer shell assembly is polychlorotrifluoroethylene and / or polytetrafluoroethylene.

[0010] As a preferred technical solution of this application, the hot welding temperature does not exceed 240°C.

[0011] As a preferred technical solution of this application, the heat welding time does not exceed 3 minutes.

[0012] As a preferred technical solution of this application, the mating surface of the lower cover is provided with an outlet channel for the electrode of the electronic component to pass through. The distal end of the electrode passes through the outlet channel, and after the heat welding, the molten material of the lower cover flows into and wraps the electrode to seal the outlet channel.

[0013] As a preferred technical solution of this application, a heat insulation layer is further attached to the inner wall of the outer shell before thermal welding.

[0014] A brain-computer interface encapsulation method includes the following steps: A housing assembly is provided, the housing assembly including a top cover, a thin wall, and a bottom cover; Electrodes, chips, and PCB boards are installed into the groove formed by the thin wall and the lower cover. The thin wall is then placed on the lower cover, and the joint surfaces of the thin wall and the lower cover are subjected to a first thermal weld to seal the thin wall and the lower cover, forming a first sealing structure. The battery and antenna are installed in the space formed by the thin wall and the upper cover. The upper cover is then placed on the thin wall. The joint surfaces of the upper cover and the thin wall are then welded together to form a second sealing structure. The second welding assembly is ultrasonic welding.

[0015] A brain-computer interface, manufactured using the encapsulation method described above, includes an upper cover and a lower cover, wherein the upper cover and the lower cover are sealed together by thermal welding and enclosed to form a cavity; And / or, It includes a thin wall disposed between the upper cover and the lower cover, the thin wall and the lower cover being connected by a first thermal weld seal, the upper cover and the thin wall being connected by a second weld seal, and the cavity encapsulating electrodes, chips, PCB boards, batteries and antennas.

[0016] As a preferred technical solution of this application, the electrode includes at least 1024 channels.

[0017] The brain-computer interface encapsulation method and brain-computer interface described in this invention have the following beneficial effects: 1. This solution uses the aforementioned hot welding fixture for hot welding. Since the lower ring is hollowed out along the axis to form an annular hole, the heat is concentrated on the side ring of the lower ring, so that the heat is concentrated and transferred to the joint surface of the lower cover. This avoids the large-area heat conduction to the cavity formed by the upper cover and the lower cover, thereby effectively controlling the temperature rise in the cavity during the hot welding process and preventing the electronic components in the cavity from being damaged by heat. 2. This design divides the outer casing into a three-part, compartmentalized structure consisting of an upper cover, a thin-walled section, and a lower cover. The thin-walled section and the lower cover are sealed together via a first thermal weld, while the upper cover and the thin-walled section are sealed together via a second weld (ultrasonic welding) at a lower temperature. The first thermal weld is completed before the installation of the battery and other heat-sensitive components, while the second weld is completed after the battery is installed. Because the temperature of the second weld is significantly lower than the battery's maximum operating temperature, the battery will not be thermally damaged during the second weld process, fundamentally avoiding the risk of battery explosion. Attached Figure Description

[0018] The present invention includes the following figures: The accompanying drawings are provided to better understand the invention and are not intended to unduly limit the scope of the invention. Wherein: Figure 1This is a side view of the upper and lower covers in Embodiment 1 of the present invention.

[0019] Figure 2 This is a schematic cross-sectional view of the upper and lower covers in Embodiment 1 of the present invention.

[0020] Figure 3 This is a side view of the hollowed-out portion of the lower ring in Embodiment 1 of the present invention.

[0021] Figure 4 This is a side view of the structure in Embodiment 2 of the present invention.

[0022] The correspondence between the numbers in the attached diagram is as follows: 1-Top cover; 2-Thin wall; 3-Lower cover; 4-Lower ring; 5-Upper ring; 6-Ring hole. Detailed Implementation

[0023] The present invention will be further described in detail below with reference to the accompanying drawings. This detailed description is an illustration in conjunction with exemplary embodiments of the invention, including various details of the embodiments to aid understanding, and should be considered merely exemplary. Therefore, those skilled in the art will recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the invention. Similarly, for clarity and brevity, descriptions of well-known functions and structures are omitted in the following description.

[0024] Example 1 This embodiment provides a brain-computer interface encapsulation method, including the following steps: A housing assembly is provided, the housing assembly including an upper cover 1 and a lower cover 3; Electronic components are installed into the cavity formed by the upper cover 1 and the lower cover 3; A hot welding fixture is provided, the hot welding fixture includes an upper ring 5 and a lower ring 4, and a ring hole 6 is formed by hollowing out along the axis of the lower ring 4 so that the heat is concentrated on the side ring portion of the lower ring 4 after preheating. The lower cover 3 is placed on the side ring of the lower ring 4 so that heat is concentrated and transferred to the joint surface of the lower cover 3. The upper ring 5 is placed on the upper cover 1 and pressure is applied to it to heat weld the mating surfaces of the upper cover 1 and the lower cover 3, so that the upper cover 1 and the lower cover 3 are sealed together.

[0025] refer to Figures 1-3 As shown, specifically, the material of the outer shell assembly is polychlorotrifluoroethylene and / or polytetrafluoroethylene, and the electrode insulating layer material is PI (polyimide).

[0026] It should be noted that PCTFE (polychlorotrifluoroethylene) has excellent biocompatibility, chemical inertness and low hygroscopicity. It does not cause rejection reactions when implanted in the body for a long time. Moreover, its coefficient of thermal expansion is similar to that of the PI electrode insulation layer. It is not easy to generate stress cracks during the hot welding cooling process, which ensures the long-term airtightness and mechanical reliability of the weld.

[0027] The outer casing assembly includes an upper cover 1 and a lower cover 3, wherein: The inner wall of the top cover 1 is machined with a fixing structure, which can be a slot or a positioning post, for fixing electronic components; A lead-out channel is provided at the joint surface of the lower cover 3. The width of the lead-out channel matches the width of the electrode, so that the electrode can pass through from the inside of the housing to the outside of the housing. The lower cover 3 also has a cavity for accommodating electronic components.

[0028] The chip is electrically connected to the PCB board using a flip-chip bonding process, and then the proximal ends of the electrodes are soldered to the chip or PCB board, wherein the number of electrode channels is at least 1024. By directly sealing the electrodes with a polymer shell in conjunction with the lead-out channels, it is possible to achieve electrode lead-out with 1024 channels or even higher density without relying on metal feedthrough structures, which meets the needs of future high-resolution neural signal acquisition, while avoiding the processing difficulties caused by multi-channel feedthroughs.

[0029] refer to Figure 3 As shown, during hot welding, the upper ring 5 and the lower ring 4 are first placed on a hot plate and preheated to a set temperature, ensuring that the temperatures of the upper ring 5 and the lower ring 4 reach the set values ​​uniformly. Then, the upper ring 5 is removed, leaving the lower ring 4 on the hot plate. The lower cover 3 is placed on the side ring portion of the lower ring 4, so that the outer periphery of the lower cover 3 contacts the side ring portion. Because the middle part of the lower ring 4 is hollowed out, forming a ring hole 6, the bottom surface of the lower cover 3 does not contact the solid part of the lower ring 4; heat is transferred only through the side ring portion to the outer peripheral wall of the lower cover 3, thus concentrating the heat transfer to the mating surface of the lower cover 3. The upper ring 5 is removed from the hot plate, placed on top of the upper cover 1, and pressure is applied to it to perform hot welding on the mating surface of the upper cover 1 and the lower cover 3. The welding is performed at a temperature of 240°C and a pressure of 0.2 MPa for 60 seconds. During this process, the heat carried by the upper ring 5 is conducted through the upper cover 1 to the joint surface between the upper cover 1 and the lower cover 3, while the heat carried by the side ring portion of the lower ring 4 is conducted through the lower cover 3 to the joint surface of the lower cover 3. The joint surface melts upon heating, and the molten shell material flows into the lead-out channel, completely encasing the protruding part of the electrode. After cooling, the upper cover 1 and the lower cover 3 are sealed together, and the electrode is simultaneously encased and sealed by the molten shell material, ensuring the airtightness of the shell.

[0030] By controlling the temperature of the hot welding to within 240℃ and the pressure holding time to no more than 3 minutes, the PCTFE is fully melted to form a dense weld, and the peak temperature of the inner cavity is effectively suppressed, providing a safe premise for the subsequent installation of thermal elements such as batteries.

[0031] During the hot welding process, the melting temperature of PCTFE is approximately 210℃-220℃, while the melting temperature of PI material is much higher than 300℃. Therefore, when PCTFE melts, the PI insulation layer of the electrode wire remains intact, without being damaged or melted, thus ensuring the insulation performance and structural integrity of the electrode wire.

[0032] After the thermal welding is completed, the upper cover 1 and the lower cover 3 enclose each other to form a cavity. The electrodes, chips, and PCB board are all located inside the cavity, with the distal ends of the electrodes extending from the inside of the cavity to the outside. At this point, the sealed structure has been formed, but the thermally sensitive components such as batteries and antennas have not yet been installed.

[0033] After the sealed structure has cooled naturally to room temperature, the battery, antenna, and charging coil are installed into the cavity formed by the upper cover 1 and the lower cover 3, and positioned and fixed by the fixing structure on the inner wall of the upper cover 1. The battery is a rechargeable micro lithium battery with an upper operating temperature limit of 85℃; the antenna is a Bluetooth antenna or other near-field communication antenna.

[0034] The above-mentioned packaging method uses the aforementioned hot welding fixture for hot welding. Since the lower ring 4 is hollowed out along the axis to form an annular hole 6, the heat is concentrated on the side ring of the lower ring 4, so that the heat is concentrated and transferred to the joint surface of the lower cover 3. This avoids the large-area heat conduction to the cavity formed by the upper cover 1 and the lower cover 3, thereby effectively controlling the temperature rise in the cavity during the hot welding process and preventing the electronic components in the cavity from being damaged by heat.

[0035] In other embodiments, a heat insulation layer can be adhered to the inner wall of the outer casing before thermal welding. The heat insulation layer is made of a hydrogel film with a thickness of 0.1mm-0.3mm, and its thermal conductivity is lower than that of PCTFE material, thus providing heat insulation during the thermal welding process. During thermal welding, the hydrogel film further blocks heat conduction into the cavity, further reducing the peak temperature of the cavity. Actual measurements show that after applying the hydrogel film, the peak temperature inside the cavity is reduced by approximately 5°C-10°C compared to when it is not applied, ensuring that sensitive components such as the battery remain within a safe temperature range, thereby improving process stability.

[0036] Example 2 refer to Figure 4As shown, the difference between this embodiment and Embodiment 1 lies in the different structures of the outer casing components and the different steps of the encapsulation method. Embodiment 1 involves direct thermal welding between the upper cover 1 and the lower cover 3, with side heating achieved through a thermal welding fixture; this embodiment features a three-piece cavity structure consisting of the upper cover 1, the thin-walled section 2, and the lower cover 3, with step-by-step welding to prevent heat damage to the battery.

[0037] This embodiment provides a brain-computer interface encapsulation method, including the following steps: A housing assembly is provided, the housing assembly including an upper cover 1, a thin wall 2, and a lower cover 3; Electrodes, chips, and PCB boards are installed into the groove formed by the thin wall 2 and the lower cover 3. The thin wall 2 is then placed on the lower cover 3. The joint surfaces of the thin wall 2 and the lower cover 3 are subjected to a first thermal welding to seal the thin wall 2 and the lower cover 3, forming a first sealing structure. The battery and antenna are installed in the space formed by the thin wall 2 and the upper cover 1. The upper cover 1 is placed on the thin wall 2. The joint surfaces of the upper cover 1 and the thin wall 2 are welded together to seal the upper cover 1 and the thin wall 2, forming a second sealing structure. The second welding assembly is ultrasonic welding.

[0038] In this embodiment, the first thermal welding can be performed using one of the following two methods: Method 1 is to use hot welding fixtures: A hot-welding fixture is provided, comprising an upper ring 5 and a lower ring 4. An annular hole 6 is formed by hollowing out along the axis of the lower ring 4 to concentrate heat on the side annular portion of the lower ring 4 after preheating. The lower cover 3 is placed on the side annular portion of the lower ring 4, allowing heat to be concentrated and transferred to the mating surface of the lower cover 3. A thin-walled plate 2 is then placed on top of the lower cover 3, and the upper ring 5 is placed on top of the thin-walled plate 2 and pressure is applied to it, performing a first hot-welding connection between the thin-walled plate 2 and the lower cover 3.

[0039] During hot welding, the upper ring 5 and the lower ring 4 are first placed on a hot plate and preheated to a set temperature, ensuring that the temperatures of the upper ring 5 and the lower ring 4 reach the set values ​​uniformly. Then, the upper ring 5 is removed, leaving the lower ring 4 on the hot plate. The lower cover 3 is placed on the side ring portion of the lower ring 4, so that the outer periphery of the lower cover 3 contacts the side ring portion. Because the middle part of the lower ring 4 is hollowed out, the bottom surface of the lower cover 3 does not contact the solid part of the lower ring 4; heat is transferred only through the side ring portion to the outer peripheral wall of the lower cover 3, thus concentrating the heat transfer to the mating surface of the lower cover 3. The upper ring 5 is removed from the hot plate, fitted onto the thin wall 2, and pressure is applied to it, performing the first hot welding of the mating surface between the thin wall 2 and the lower cover 3.

[0040] Method 2 does not use hot welding fixtures: The thin-walled section 2 is placed on the lower cover 3. The heating plate of the hot welding equipment is heated to 240°C. Under a pressure of 0.2 MPa, the joint surfaces of the thin-walled section 2 and the lower cover 3 are subjected to the first hot welding. The heating and pressure holding time is 60 seconds.

[0041] The heating plate of the hot welding equipment is heated to 240°C, and the first hot welding is performed on the joint surface of the thin wall 2 and the lower cover 3 under a pressure of 0.2 MPa, and the heating and pressure are maintained for 60 seconds.

[0042] Both methods allow the PCTFE material to melt at the interface. The molten PCTFE material flows into the lead-out channel under pressure, completely encasing the electrode's protrusion portion. After cooling, it forms the first sealing structure, thus achieving a sealed connection between the thin-walled section 2 and the lower cover 3. By controlling the temperature of the first thermal weld to below 240°C and ensuring that each pressure holding time does not exceed 3 minutes, the PCTFE is fully melted to form a dense weld, effectively suppressing the peak temperature within the cavity and providing a safe prerequisite for subsequent battery installation.

[0043] In this embodiment, the outer casing assembly includes an upper cover 1, a thin wall 2, and a lower cover 3.

[0044] The inner wall of the upper cover 1 is machined with a fixing structure, which can be a slot or a positioning post, for subsequent fixing of the battery, antenna and charging coil; The thin wall 2 is annular, with mating surfaces at its upper and lower ends that mate with the upper cover 1 and the lower cover 3, respectively; the top of the thin wall 2 is provided with an annular groove for the upper cover 1 to be accommodated. The lower cover 3 has an outlet channel at the joint surface, the width of which matches the width of the electrode, for the electrode to pass through from the inside of the housing to the outside of the housing; the lower cover 3 also has a groove (i.e., the first cavity) for accommodating the electrode, chip and PCB board.

[0045] The outer casing is made of polychlorotrifluoroethylene and / or polytetrafluoroethylene, and the electrode insulation layer is made of PI (polyimide).

[0046] The chip is electrically connected to the PCB board using a flip-chip bonding process. Then, the proximal end of the electrode is soldered to the chip or PCB board, and the electrode has at least 1024 channels. The distal end of the electrode extends out from the lead-out channel of the lower cover 3, so that the distal end of the electrode extends from the mating surface of the lower cover 3 to the outside of the housing.

[0047] The thin-walled plate 2 is placed on top of the lower cover 3, so that the lower end of the thin-walled plate 2 is in contact with the joint surface of the lower cover 3, and the electrode is clamped in the lead-out channel. The lead-out channel is opened at the joint surface of the lower cover 3, which allows the molten shell material during hot welding to flow naturally into the channel under pressure and completely wrap the outer wall of the electrode, forming a gapless seal.

[0048] In other embodiments, a heat insulation layer may be attached to the inner wall of the outer shell before the first heat welding. The heat insulation layer material is an insulated condensate film with a thickness of 0.1mm-0.3mm. Its thermal conductivity is lower than that of PCTFE material, and it can play a heat insulation role during the heat welding process.

[0049] The heating plate of the hot welding equipment is heated to 240°C. Under a pressure of 0.2 MPa, the joint surface of the thin-walled structure 2 and the lower cover 3 is subjected to a first hot weld. The heating and pressure holding time is 60 seconds, causing the PCTFE material to melt at the joint surface. The molten PCTFE material flows into the lead-out channel under pressure, completely covering the electrode protrusion part. After cooling, it forms a first sealing structure, thereby achieving a sealed connection between the thin-walled structure 2 and the lower cover 3. By controlling the temperature of the first hot weld to within 240°C and the single pressure holding time not exceeding 3 minutes, the PCTFE is fully melted to form a dense weld, and the peak temperature of the internal cavity is effectively suppressed, providing a safe premise for subsequent battery installation.

[0050] After the first thermal welding is completed, the thin-walled part 2 and the lower cover 3 enclose each other to form the first cavity. The electrodes, chips and PCB board are all located in the first cavity, but at this time, the thermal components such as batteries and antennas have not yet been installed.

[0051] After the first sealing structure has cooled naturally to room temperature, the battery, antenna, and charging coil are installed into the space (i.e., the second cavity) formed by the thin wall 2 and the upper cover 1, and positioned and fixed by the fixing structure on the inner wall of the upper cover 1. The battery is a rechargeable micro lithium battery with an upper limit of 85°C for operation; the antenna is a Bluetooth antenna or other near-field communication antenna.

[0052] The upper cover 1 is placed over the upper end of the thin-walled wall 2, so that the lower end of the upper cover 1 is in contact with the upper end of the thin-walled wall 2. An ultrasonic welding device is used to perform a second welding on the joint surfaces of the upper cover 1 and the thin-walled wall 2. The ultrasonic welding frequency is 20kHz-40kHz, the amplitude is 20μm-50μm, the welding pressure is 0.1MPa-0.3MPa, and the welding time is 0.5 seconds-3 seconds. The overall temperature rise during ultrasonic welding does not exceed 50℃-80℃, therefore the battery, antenna, and charging coil are not subject to heat damage during the welding process.

[0053] After ultrasonic welding is completed, a second weld is formed between the top cover 1 and the thin wall 2, and the top cover 1 and the thin wall 2 enclose a second cavity. The battery, antenna, and charging coil are all located in the second cavity, forming a second sealed structure.

[0054] The above-mentioned packaging method divides the outer shell into a three-part cavity structure consisting of an upper cover 1, a thin wall 2, and a lower cover 3. The battery and antenna are installed after the first thermal welding is completed. The second welding is done using an ultrasonic welding process with a temperature far below the battery's operating limit, thereby completely avoiding the risk of thermal damage or explosion to the battery caused by high-temperature welding.

[0055] The present invention also proposes a brain-computer interface made using the above-described encapsulation method, comprising an upper cover 1 and a lower cover 3, wherein the upper cover 1 and the lower cover 3 are connected and sealed by thermal welding to form a cavity; And / or, It includes a thin wall 2 disposed between the upper cover 1 and the lower cover 3. The thin wall 2 and the lower cover 3 are connected by a first thermal weld and sealed together. The upper cover 1 and the thin wall 2 are connected by a second weld and sealed together. Electrodes, chips, PCB boards, batteries and antennas are encapsulated inside the cavity.

[0056] All structures in this application can be customized in terms of material and length according to actual usage. The attached drawings are schematic structural diagrams, and the actual dimensions can be adjusted accordingly.

[0057] The contents not described in detail in this specification are existing technologies known to those skilled in the art.

[0058] The above description is only a preferred embodiment of the present invention. The scope of protection of the present invention is not limited to the above embodiments. Any equivalent modifications or changes made by those skilled in the art based on the content disclosed in the present invention should be included in the scope of protection of this application.

Claims

1. A brain-computer interface encapsulation method, characterized in that, Includes the following steps: A housing assembly is provided, the housing assembly including an upper cover and a lower cover; Electronic components are installed into the cavity formed by the upper cover and the lower cover; A hot welding fixture is provided, the hot welding fixture including an upper ring and a lower ring, and a ring hole is formed by hollowing out along the axis of the lower ring so that the heat is concentrated on the side ring portion of the lower ring after preheating; The lower cover is placed on the side ring of the lower ring, so that heat is concentrated and transferred to the mating surface of the lower cover; The upper ring is placed on the upper cover and pressure is applied to it to heat weld the mating surfaces of the upper cover and the lower cover together, so that the upper cover and the lower cover are sealed together.

2. The packaging method according to claim 1, characterized in that, The process also includes preheating the upper and lower rings before the hot welding.

3. The packaging method according to claim 1, characterized in that, The material of the outer casing assembly is polychlorotrifluoroethylene and / or polytetrafluoroethylene.

4. The packaging method according to claim 1, characterized in that, The hot welding temperature shall not exceed 240°C.

5. The packaging method according to claim 4, characterized in that, The hot welding time shall not exceed 3 minutes.

6. The packaging method according to claim 1, characterized in that, The lower cover has an outlet channel at the joint surface for the electrodes of the electronic components to pass through. The distal end of the electrode passes through the outlet channel, and after the heat welding, the molten lower cover material flows in and wraps around the electrode to seal the outlet channel.

7. The packaging method according to claim 1, characterized in that, Before thermal welding, a heat insulation layer is also attached to the inner wall of the outer shell.

8. A brain-computer interface encapsulation method, characterized in that, Includes the following steps: A housing assembly is provided, the housing assembly including a top cover, a thin wall, and a bottom cover; Electrodes, chips, and PCB boards are installed into the groove formed by the thin wall and the lower cover. The thin wall is then placed on the lower cover, and the joint surfaces of the thin wall and the lower cover are subjected to a first thermal weld to seal the thin wall and the lower cover, forming a first sealing structure. The battery and antenna are installed in the space formed by the thin wall and the upper cover. The upper cover is then placed on the thin wall. The joint surfaces of the upper cover and the thin wall are then welded together to form a second sealing structure. The second welding assembly is ultrasonic welding.

9. A brain-computer interface, characterized in that, The packaging method described in any one of claims 1 to 8 is used to make an upper cover and a lower cover, wherein the upper cover and the lower cover are sealed together by thermal welding and enclosed to form a cavity; And / or, It includes a thin wall disposed between the upper cover and the lower cover, the thin wall and the lower cover being connected by a first thermal weld seal, the upper cover and the thin wall being connected by a second weld seal, and the cavity encapsulating electrodes, chips, PCB boards, batteries and antennas.

10. The brain-computer interface according to claim 9, characterized in that, The electrode comprises at least 1024 channels.

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