Intelligent hot plug control method and system for direct current power supply

Abstract

The application discloses an intelligent hot plug control method and system of a direct-current power supply, and relates to the technical field of power supply hot plug control. The method comprises the following steps: acquiring a conduction timing parameter corresponding to a power MOSFET; after detecting a direct-current power supply access event, determining a target conduction time according to the conduction timing parameter and controlling the power MOSFET to be turned on; collecting the conduction voltage drop and the load current of the power MOSFET, determining a conduction resistance representation parameter and an operating state; reporting hot plug operation information to an upper-level management system and receiving control instructions; when the operating state meets a preset fault condition or a turn-off instruction is received, controlling the power MOSFET to be turned off and reporting turn-off information. Therefore, the conduction timing can be flexibly adjusted, the power MOSFET state monitoring, fault early warning and system linkage control can be realized, and the reliability and intelligent level of the direct-current power supply hot plug control are improved.

Description

Technical Field

[0001] This application relates to the field of power supply hot-swap control technology, and in particular to an intelligent hot-swap control method and system for DC power supplies. Background Technology

[0002] As servers, storage devices, communication base stations, and other electronic equipment evolve towards modularity and high reliability, DC power supply systems often require the insertion, removal, or replacement of power modules, service boards, or other load modules while maintaining continuous system operation. Hot-swapping technology enables module insertion or removal without interrupting the overall system power supply, and is therefore widely used in electronic equipment requiring continuous operation and convenient maintenance.

[0003] Existing DC power supply hot-swap control schemes typically connect a power switching device in series between the power input and the load, and pre-charge the load capacitor using a soft-start resistor or delay circuit to limit inrush current when the module is connected. The power switching device is then turned on to establish a power supply path. However, the turn-on delay time in existing schemes is mostly determined by fixed RC parameters, which are difficult to adjust based on load capacity, number of modules, and power-on sequence. Furthermore, existing schemes usually only provide basic on / off control or fault protection, failing to comprehensively monitor the operating status of the power switching device and the load, and making it difficult to promptly identify aging, poor contact, or abnormal operation of the power switching device. In addition, the hot-swap control unit typically operates independently, with limited information exchange capabilities with the upper-level management system. The upper-level management system struggles to obtain operating parameters, fault status, or remotely adjust control parameters, hindering centralized management and coordinated control of multiple power supply modules.

[0004] Therefore, in the hot-swap control process of DC power supplies, the inflexible adjustment of the turn-on timing of power switching devices, the insufficient monitoring and fault warning capabilities, and the lack of effective linkage between the hot-swap control unit and the upper-level management system have become urgent problems to be solved. Summary of the Invention

[0005] This application provides an intelligent hot-swap control method and system for DC power supplies, aiming to solve the problems in the existing technology of hot-swap control of DC power supplies, such as the difficulty in flexibly adjusting the turn-on timing of power switching devices, insufficient monitoring of operating status and fault early warning capabilities, and the lack of effective linkage between the hot-swap control unit and the upper-level management system.

[0006] In a first aspect, an intelligent hot-swap control method for a DC power supply is provided, the method comprising: Obtain the hot-swap control parameters corresponding to the power MOSFET, wherein the power MOSFET is connected in series between the DC power input terminal and the load, and the hot-swap control parameters include the turn-on timing parameters; In response to the detection of a DC power supply access event, the target turn-on time of the power MOSFET is determined according to the turn-on timing parameters, and a turn-on control signal is output to the drive circuit corresponding to the power MOSFET at the target turn-on time to control the power MOSFET to turn on and establish a power supply path between the DC power supply input terminal and the load; After the power MOSFET is turned on, the on-state voltage drop of the power MOSFET and the load current flowing through the power MOSFET are collected. The on-resistance characterization parameter of the power MOSFET is determined based on the on-state voltage drop and the load current, and the operating state of the power MOSFET is determined based on the on-resistance characterization parameter. The system reports hot-swap operation information to the upper-level management system through the communication interface and receives control commands sent by the upper-level management system. The hot-swap operation information includes the operating status of the power MOSFET and at least one of the on-state voltage drop and the load current. When the operating state of the power MOSFET meets the preset fault conditions, or when a shutdown command is received from the upper-level management system, the power MOSFET is controlled to be turned off, and the corresponding shutdown information is reported to the upper-level management system.

[0007] Optionally, in the above scheme, obtaining the hot-plug control parameters corresponding to the power MOSFET includes: The system receives parameter setting instructions sent by the superior management system through the communication interface to obtain the control instructions to be parsed. The control command to be parsed is parsed to obtain the turn-on delay time corresponding to the power MOSFET; Store the conduction delay time to obtain the conduction timing parameters; The parameter setting results, including the conduction timing parameters, are sent to the upper-level management system to complete the setting of the hot-swap control parameters.

[0008] Optionally, in the above scheme, determining the target turn-on time of the power MOSFET based on the turn-on timing parameters in response to detecting a DC power supply connection event includes: The input voltage at the input terminal of the DC power supply is collected to obtain the input voltage detection result; Based on the relationship between the input voltage detection result and the preset effective voltage condition, the power supply connection status of the DC power supply input terminal is determined; When the power supply access status indicates that the DC power supply has been connected, a DC power supply access event is generated, and a delay timer is started to obtain the delay timer duration. The delay timing duration is compared with the conduction delay time corresponding to the conduction timing parameter to obtain the delay comparison result; When the delay comparison result indicates that the delay timing duration has reached the conduction delay time, the current time is determined as the target conduction time.

[0009] Optionally, in the above scheme, a soft-start resistor is connected in parallel between the drain and source of the power MOSFET, and the step of outputting a turn-on control signal to the drive circuit corresponding to the power MOSFET at the target turn-on time includes: After detecting the DC power supply access event, the power MOSFET is kept in the off state, so that the DC power supply input terminal precharges the input capacitor of the load terminal through the soft start resistor, forming a load precharge path. Based on the target turn-on time, determine whether the power MOSFET meets the turn-on condition, and obtain the turn-on condition determination result; When the conduction condition judgment result indicates that the power MOSFET meets the conduction condition, the conduction control signal is output to the drive circuit; The driving circuit controls the power MOSFET to turn on according to the turn-on control signal, thereby bypassing the soft-start resistor and forming the main power supply path for the load.

[0010] Optionally, in the above scheme, the step of acquiring the on-state voltage drop of the power MOSFET and the load current flowing through the power MOSFET, and determining the on-resistance characterization parameter of the power MOSFET based on the on-state voltage drop and the load current, includes: The voltage difference between the drain and source of the power MOSFET is collected by the on-state voltage drop detection circuit to obtain the on-state voltage drop sampling data. The load current flowing through the power MOSFET is collected by the load current detection circuit to obtain load current sampling data; Based on the on-state voltage drop sampling data and the load current sampling data, electrical parameter sampling data corresponding to the power MOSFET is generated; Based on the correspondence between the on-state voltage drop and the load current in the electrical parameter sampling data, the on-resistance characterization parameter of the power MOSFET is determined.

[0011] Optionally, in the above scheme, determining the on-resistance characterization parameter of the power MOSFET based on the correspondence between the on-state voltage drop and the load current in the electrical parameter sampling data, and determining the operating state of the power MOSFET based on the on-resistance characterization parameter, includes: The approximate on-resistance of the power MOSFET is determined based on the ratio between the on-state voltage drop and the load current. Obtain the reference value of the on-resistance corresponding to the power MOSFET, and determine the degree of deviation of the on-resistance based on the approximate on-resistance and the reference value of the on-resistance; The deviation of the on-resistance is compared with the preset anomaly determination conditions to obtain the anomaly determination result; When the anomaly determination result indicates that the deviation of the conduction resistance meets the preset anomaly determination condition, it is determined that the power MOSFET is in an abnormal operating state, and a corresponding state anomaly warning information is generated.

[0012] Optionally, in the above scheme, the communication interface is an I2C communication interface. The step of reporting hot-plug operation information to the higher-level management system through the communication interface and receiving control commands sent by the higher-level management system includes: The on-state, on-state voltage drop, load current, and operating status of the power MOSFET are obtained to generate the operating data to be reported. The operation data to be reported is encapsulated according to a preset communication protocol to obtain a hot-pluggable status data packet; Based on the preset reporting period or the detected operational status change event, the hot-plug status data packet is sent to the upper-level management system through the I2C communication interface to obtain the operational information reporting result. The system receives status query commands or remote control commands sent by the superior management system through the I2C communication interface, and obtains system interaction information.

[0013] Optionally, in the above scheme, receiving status query commands or remote control commands sent by the superior management system through the I2C communication interface to obtain system interaction information includes: Receive the pending control instructions sent by the superior management system, and parse the pending control instructions to obtain the instruction type and instruction parameters; Based on the instruction type, determine whether the control instruction to be processed is a status query instruction, a conduction timing parameter setting instruction, a conduction control instruction, or a shutdown control instruction, and obtain the instruction identification result; Based on the instruction recognition result and the instruction parameters, the corresponding hot-plug control operation is executed to obtain the instruction execution result; The execution result of the instruction is sent to the upper-level management system through the I2C communication interface to obtain the system interaction information.

[0014] Optionally, in the above scheme, controlling the power MOSFET to turn off when the operating state of the power MOSFET meets a preset fault condition, or when a shutdown command is received from the upper-level management system, includes: The load current is compared with the preset overcurrent condition to obtain the load fault judgment result; Based on the relationship between the operating state of the power MOSFET and the preset turn-off conditions, it is determined whether the power MOSFET needs to be shut down due to a fault, and the device turn-off judgment result is obtained. When the load fault judgment result indicates that the load has an overcurrent fault, the device shutdown judgment result indicates that the fault shutdown needs to be performed, or the shutdown command is received, a shutdown control signal is generated; The power MOSFET is turned off by controlling the drive circuit according to the shutdown control signal, thereby obtaining a shutdown execution state; The shutdown information is generated based on the load fault judgment result, the device shutdown judgment result, and the shutdown execution status, and then sent to the upper-level management system.

[0015] In a second aspect, an intelligent hot-swappable control system for a DC power supply is provided, the system comprising a controller, a communication interface, a MOSFET drive circuit, a power MOSFET, a soft-start resistor, a forward voltage drop detection circuit, and a load current detection circuit. The communication interface, the MOSFET driving circuit, the on-state voltage drop detection circuit, and the load current detection circuit are respectively connected to the controller, and the MOSFET driving circuit is connected to the gate of the power MOSFET. The power MOSFET is connected in series between the DC power input terminal and the load, and the soft-start resistor is connected in parallel between the drain and source of the power MOSFET. The soft-start resistor is used to pre-charge the load terminal before the power MOSFET is turned on. The on-state voltage drop detection circuit is connected between the drain and source of the power MOSFET to detect the on-state voltage drop of the power MOSFET, and the load current detection circuit is used to detect the load current flowing through the power MOSFET. The controller is used to obtain the hot-plug control parameters corresponding to the power MOSFET through the communication interface, and the hot-plug control parameters include the turn-on timing parameters; The controller is also used to obtain the power access status of the DC power input terminal. When the power access status indicates that the DC power is connected, the controller determines the target turn-on time of the power MOSFET according to the turn-on timing parameters, and controls the power MOSFET to turn on through the MOSFET driving circuit at the target turn-on time. The controller is further configured to, after the power MOSFET is turned on, obtain the on-state voltage drop and the load current through the on-state voltage drop detection circuit and the load current detection circuit respectively, determine the on-state resistance characterization parameter of the power MOSFET based on the on-state voltage drop and the load current, and determine the operating state of the power MOSFET based on the on-state resistance characterization parameter; The controller is also used to report hot-swap operation information to the upper-level management system through the communication interface and receive control commands sent by the upper-level management system. When the operating state of the power MOSFET meets the preset fault conditions or a shutdown command is received, the controller controls the power MOSFET to shut down through the MOSFET drive circuit and reports the corresponding shutdown information to the upper-level management system.

[0016] Compared with the prior art, this application has at least the following beneficial effects: Based on further analysis and research of existing technical problems, this application recognizes the difficulties in flexibly adjusting the turn-on timing of power switching devices, insufficient operational status monitoring and fault early warning capabilities, and the lack of effective linkage between the hot-swap control unit and the upper-level management system during the hot-swap control of DC power supplies. By acquiring hot-swap control parameters including turn-on timing parameters, after detecting a DC power supply connection event, the target turn-on time of the power MOSFET is determined according to the turn-on timing parameters, and the power MOSFET is controlled to turn on at the target turn-on time. This allows the turn-on timing of the power MOSFET to be flexibly set according to different loads and system power-on requirements, avoiding insufficient adaptability caused by using fixed control timing. After the power MOSFET is turned on, its on-state voltage drop and load current are synchronously collected to determine the on-resistance characterization parameters, and the power MOSFET's on-state resistance is judged based on the on-resistance characterization parameters. The system monitors the operating status, enabling real-time identification of changes in the conduction performance of the power MOSFET, thereby improving the monitoring and early warning capabilities for device anomalies. Simultaneously, it reports hot-swap operation information and receives control commands to the upper-level management system via a communication interface, allowing the upper-level management system to promptly grasp the operating status of the power MOSFET and load, and remotely control the hot-swap process. Furthermore, when the operating status of the power MOSFET meets preset fault conditions or a shutdown command is received, the system controls the power MOSFET to shut down and reports the shutdown information, thus forming a closed loop that seamlessly integrates conduction control, status monitoring, information interaction, and fault handling. This solves the problems of inflexible adjustment of conduction timing, insufficient operational status monitoring and fault early warning capabilities, and lack of effective linkage between the hot-swap control unit and the upper-level management system in existing DC power supply hot-swap control, improving the flexibility, reliability, and intelligent management level of DC power supply hot-swap control. Attached Figure Description

[0017] Figure 1 A flowchart illustrating an intelligent hot-swap control method for a DC power supply provided in one embodiment of this application; Figure 2 A schematic diagram of a DC power supply intelligent hot-swappable control system provided in one embodiment; Figure 3 A flowchart illustrating the operation of an intelligent hot-swap control method for DC power supplies provided in one embodiment. Detailed Implementation

[0018] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0019] In one embodiment, such as Figure 1 , Figure 2 and Figure 3 As shown, an intelligent hot-swappable control method for a DC power supply is provided. This method is executed by a controller. After the system is powered on, the controller first performs initialization operations, configuring the general-purpose input / output port connected to the MOSFET drive circuit, the analog-to-digital conversion channel connected to the on-state voltage drop detection circuit and the load current detection circuit, the communication interface connected to the upper-level management system, and the timer for performing delay timing. During initialization, the controller keeps the power MOSFET in the off state to prevent the power MOSFET from being mistakenly turned on before the control program has entered a stable operating state. After initialization, the controller can send ready information to the upper-level management system through the communication interface and enter a standby state waiting for control commands or DC power supply access events.

[0020] A power MOSFET is connected in series between the DC power input and the load to control the power supply path between them. The power MOSFET can be an N-channel MOSFET, with its drain connected to the DC power input, its source connected to the load, and its gate connected to the MOSFET driver circuit. The MOSFET driver circuit generates a drive signal that meets the gate drive requirements of the power MOSFET based on the turn-on or turn-off control signal output from the controller, thereby controlling the power MOSFET to turn on or off.

[0021] The controller acquires the hot-swap control parameters corresponding to the power MOSFET. These parameters include at least a turn-on timing parameter, which characterizes the time required to turn on the power MOSFET after detecting a DC power supply connection event. In one implementation, the turn-on timing parameter is the turn-on delay time sent by the upper-level management system via the communication interface; in another implementation, when the controller does not receive valid parameters from the upper-level management system, it can read the default turn-on delay time pre-stored in non-volatile memory as the turn-on timing parameter corresponding to the local control strategy.

[0022] The upper-level management system can be a baseboard management controller on a server motherboard, a power management controller in a communication device, or other management devices capable of performing centralized power management. The communication interface can be an I2C interface, with the controller acting as an I2C slave device connected to the backplane bus, and the upper-level management system acting as an I2C master device sending parameter setting commands, status query commands, on / off control commands, or off / on control commands to the controller.

[0023] The controller detects the power connection status at the DC power input terminal. When the input voltage at the DC power input terminal reaches a preset effective voltage condition, the controller determines that a DC power connection event has occurred. In response to this event, the controller starts an internal timer and keeps the power MOSFET in the off state. At this time, the input capacitor at the load terminal is pre-charged through a soft-start resistor connected in parallel between the drain and source of the power MOSFET at the DC power input terminal to limit the inrush current during the initial power connection.

[0024] The controller determines the target turn-on time of the power MOSFET based on the turn-on timing parameters. When the delay duration recorded by the internal timer reaches the turn-on delay time corresponding to the turn-on timing parameters, the controller determines the current time as the target turn-on time and outputs a turn-on control signal to the MOSFET driver circuit. The MOSFET driver circuit converts the logic control signal output by the controller into the gate drive signal required by the power MOSFET, enabling the power MOSFET to fully turn on. After the power MOSFET turns on, a low-resistance main power supply path is formed, thereby bypassing the soft-start resistor and establishing a normal power supply path between the DC power input terminal and the load. By adjusting the turn-on delay time, loads with different input capacitances can be adapted, and different target turn-on times can be set for multiple load modules to achieve sequential power-on of multiple load modules.

[0025] After the power MOSFET is turned on, the controller acquires the on-state voltage drop between the drain and source of the power MOSFET through the on-state voltage drop detection circuit, and acquires the load current flowing through the power MOSFET through the load current detection circuit. The on-state voltage drop detection circuit and the load current detection circuit convert the corresponding electrical quantities into voltage signals that the controller can acquire, and input them into the controller's analog-to-digital conversion channel, respectively.

[0026] The controller determines the on-resistance characterization parameter of the power MOSFET based on the on-state voltage drop and load current. In one implementation, the on-resistance characterization parameter is an approximate on-state resistance determined by the ratio of the on-state voltage drop to the load current. The controller compares the approximate on-state resistance with a reference value for the on-state resistance of the power MOSFET, and determines whether the power MOSFET is in a normal operating state or an abnormal operating state based on the comparison result. An abnormal operating state can be used to characterize aging of the power MOSFET, poor connection contact, or failure to be in the expected fully conducting state.

[0027] During operation, the controller reports hot-swap operation information to the higher-level management system via the communication interface. This information includes the operating status of the power MOSFETs and may include one or more of the following: on-state voltage drop, load current, power MOSFET on-state, control parameters, and fault warning information. The controller can report hot-swap operation information according to a preset reporting cycle, or it can proactively report it when it detects a change in operating status, a fault, or a shutdown completion.

[0028] When the operating state of the power MOSFET meets the preset fault conditions, or when the controller receives a shutdown command from the upper-level management system, the controller outputs a shutdown control signal to the MOSFET drive circuit, causing the MOSFET drive circuit to remove the gate drive voltage and turn off the power MOSFET, thereby cutting off the power supply to the load. The controller also generates shutdown information based on the fault type, fault occurrence time, shutdown execution status, and current electrical parameters, and reports it to the upper-level management system through the communication interface.

[0029] This embodiment uses a controller as the core to perform functions such as acquiring conduction timing parameters, detecting DC power supply access, delaying conduction, collecting conduction voltage drop and load current, diagnosing the operating status of power MOSFETs, reporting operating information, and shutting down faults. This allows the conduction timing of power MOSFETs to be adjusted according to the load and system power-on requirements. At the same time, it can identify device anomalies based on the real-time electrical characteristics of power MOSFETs and integrate the hot-swap control process into the upper-level management system. This improves the controllability, status transparency, fault early warning capability, and system linkage capability of the DC power supply hot-swap process.

[0030] In one embodiment, the controller receives parameter setting instructions from the upper-level management system via a communication interface, obtaining control instructions to be parsed. The parameter setting instructions may include a device address, instruction type, parameter identifier, parameter length, and parameter value. The parameter identifier indicates that the parameter to be set is a conduction delay time, and the parameter value characterizes the corresponding delay duration, which can be in milliseconds.

[0031] After receiving a control command to be parsed, the controller identifies the command type according to a preset communication protocol and extracts the conduction delay time from the parameter setting command. For example, the upper-level management system can send a "set conduction timing parameters" command to a designated controller, and the controller can parse the parameter fields in the command to obtain a delay duration of 500 milliseconds, 1000 milliseconds, or other durations.

[0032] The controller can perform format and range checks on the parsed conduction delay time. Format check is used to determine whether the parameter length and data format conform to the preset communication protocol, and range check is used to determine whether the conduction delay time is within the allowed time range. If the conduction delay time is valid, the controller stores the conduction delay time in a register, random access memory, or non-volatile memory to obtain the conduction timing parameters; if the conduction delay time is invalid, the controller can retain the original conduction timing parameters or call the default conduction timing parameters.

[0033] After parameter storage is complete, the controller generates parameter setting results. These results may include a success flag, the current conduction timing parameters, and a parameter error flag. The controller sends the parameter setting results to the upper-level management system via the communication interface, allowing the upper-level management system to confirm that the conduction timing parameters have been set. The handover documentation clearly states that the upper-level management system sends a setting command containing the conduction delay time via the I2C bus, and the controller receives and stores this parameter.

[0034] When the communication interface is temporarily unable to receive parameter setting instructions from the upper-level management system, the controller can also read the locally stored default conduction timing parameters to ensure that the hot-swap control function can continue to execute. After the upper-level management system restores communication, it can reissue the conduction timing parameters and overwrite the original parameters.

[0035] This embodiment parses, stores, and feeds back the parameter setting instructions issued by the superior management system, enabling the turn-on delay time to be set remotely via software, instead of relying on fixed resistor-capacitor components to determine the turn-on sequence. This facilitates flexible adjustment of the turn-on timing of the power MOSFETs for different load capacities, number of modules, and power-on sequences.

[0036] In one embodiment, the controller acquires the input voltage at the DC power supply input terminal to obtain the input voltage detection result. The input voltage can be converted to the voltage range allowed by the controller's analog-to-digital conversion channel through a resistor divider branch set at the DC power supply input terminal, or it can be determined based on the input side sampling signal of the on-state voltage drop detection circuit during the power MOSFET's off period.

[0037] The controller compares the input voltage detection result with a preset effective voltage condition. The preset effective voltage condition may include an effective voltage threshold and an effective duration. For example, when the input voltage reaches the preset effective voltage threshold and remains above the threshold for multiple consecutive sampling periods, the controller determines that the DC power supply has been stably connected; when the input voltage only experiences transient fluctuations or does not continuously reach the effective voltage threshold, the controller remains in standby mode to avoid misjudging the DC power supply connection event due to connection jitter or voltage interference.

[0038] When the power supply status indicates that a DC power supply has been connected, the controller generates a DC power supply connection event and starts a delay timer. The delay timer can be implemented using the controller's hardware timer, or by a program loop counter or a system clock counter. After the delay timer starts, the controller receives the delay duration, which increases over time.

[0039] The controller reads the stored turn-on timing parameters and obtains the corresponding turn-on delay time. The controller compares the delay duration with the turn-on delay time to obtain the delay comparison result. When the delay duration is less than the turn-on delay time, the controller keeps the power MOSFET off; when the delay duration reaches the turn-on delay time, the controller determines the current moment as the target turn-on moment.

[0040] During the delay timer, if the controller detects that the input voltage has dropped to an invalid state, receives a shutdown command, or detects other conditions that prevent conduction, it can terminate the delay timer and keep the power MOSFET off. When the input voltage meets the preset effective voltage condition again, the controller regenerates the DC power supply access event and restarts the delay timer.

[0041] This embodiment determines the validity of the input voltage and starts a delay timer after confirming that the DC power supply is stably connected. This allows the target turn-on time to be determined by the actual power supply connection status and turn-on timing parameters, which reduces false turn-on caused by plug-in jitter and accurately executes programmable delayed power-on control.

[0042] like Figure 2 As shown, in one embodiment, a soft-start resistor is connected in parallel between the drain and source of the power MOSFET. When a DC power supply is applied and the power MOSFET is off, the DC power supply input provides a limited current to the load input capacitor through the soft-start resistor to pre-charge the load input capacitor.

[0043] The value of the soft-start resistor can be determined based on the DC power supply input voltage, the load input capacitance, and the allowable inrush current, ensuring that the pre-charge current does not exceed the allowable current range of the DC power supply, backplane connector, and load module. The soft-start resistor can be a power resistor capable of withstanding power losses during the pre-charge period.

[0044] After the controller detects a DC power supply connection event, it keeps the power MOSFET in the off state. The DC power supply input, the soft-start resistor, and the load terminal form a load pre-charge path. In this state, the load input capacitor gradually charges, and the voltage difference across the power MOSFET gradually changes during the pre-charge process, thereby reducing the instantaneous current surge generated when the power MOSFET is subsequently turned on.

[0045] The controller determines whether the power MOSFET meets the turn-on condition based on the target turn-on time. When the current time has not yet reached the target turn-on time, the controller does not output a turn-on control signal; when the current time reaches the target turn-on time, and there is no turn-off command or fault prohibition condition, the controller obtains the turn-on condition judgment result indicating that the power MOSFET meets the turn-on condition.

[0046] The controller outputs a turn-on control signal to the MOSFET drive circuit based on the turn-on condition determination. The MOSFET drive circuit can use a dedicated gate drive chip or a push-pull drive circuit composed of discrete transistors to convert the logic level output by the controller into a gate drive signal that can quickly and reliably drive the power MOSFET.

[0047] Once the power MOSFET is fully turned on, its on-resistance is much smaller than that of the soft-start resistor. Current primarily flows through the power MOSFET to the load, thus bypassing the soft-start resistor and forming the main power supply path for the load. The load then transitions from a pre-charge state to a normal power supply state.

[0048] This embodiment precharges the input capacitor at the load end using a soft-start resistor before the power MOSFET is turned on, and controls the power MOSFET to form a low-resistance main power supply path after the target turn-on time is reached. This can limit the surge current when the module is connected, and at the same time ensure that the load receives a stable low-loss power supply after the pre-charging is completed.

[0049] like Figure 2 As shown, in one embodiment, the controller acquires the voltage difference between the drain and source of the power MOSFET through a forward voltage drop detection circuit to obtain forward voltage drop sampling data. The forward voltage drop detection circuit is connected between the drain and source of the power MOSFET and can use a high-precision resistor divider network to convert the voltage across the power MOSFET to a range that can be safely acquired by the controller's analog-to-digital conversion channel.

[0050] In one implementation, the on-state voltage drop detection circuit acquires the voltage signals from the drain and source sides of the power MOSFET respectively, and obtains the on-state voltage drop through differential processing; in another implementation, the on-state voltage drop detection circuit adopts a differential detection structure and directly outputs the detection voltage corresponding to the drain-source voltage difference of the power MOSFET.

[0051] The controller acquires the load current flowing through the power MOSFET through a load current detection circuit to obtain load current sampling data. The load current detection circuit can use a high-side current sensing chip; alternatively, a precision sampling resistor can be connected in series between the source of the power MOSFET and the load, and a differential amplifier can be used to detect the voltage difference across the precision sampling resistor, converting the load current into a voltage signal that the controller can acquire.

[0052] The controller can collect on-state voltage drop and load current separately according to the same sampling period, so that the on-state voltage drop sampling data and load current sampling data within the same sampling period correspond to each other. The controller can also perform analog-to-digital conversion bias correction, proportional conversion and multiple sampling averaging on the sampled data to reduce the impact of resistance error, amplifier bias and electrical noise on the detection results.

[0053] The controller generates electrical parameter sampling data based on the on-state voltage drop sampling data and the load current sampling data. Each set of electrical parameter sampling data includes at least the sampling time, on-state voltage drop, and load current, so that the on-resistance characterization parameter can be determined subsequently based on the on-state voltage drop and load current at the same operating time.

[0054] Optionally, during the transient phase when the power MOSFET is just turned on or when the load current is lower than the preset minimum diagnostic current, the controller may temporarily suspend the on-resistance diagnosis to avoid distortion of calculation results due to transient voltage changes or excessively low load current. Once the power MOSFET enters a stable on-state and the load current reaches the effective detection range, the controller uses the corresponding electrical parameter sampling data to determine the on-resistance characterization parameters.

[0055] This embodiment provides a real-time electrical data basis for accurately determining the on-resistance characterization parameters of the power MOSFET by separately detecting the on-state voltage drop of the power MOSFET and the load current flowing through the power MOSFET, and establishing the correspondence between the two at the same sampling time. This makes device status diagnosis no longer dependent on switching status or single current information.

[0056] In one embodiment, the controller determines the approximate on-resistance of the power MOSFET based on the on-state voltage drop and load current in the electrical parameter sampling data. The approximate on-resistance can be expressed as: R ds(on) = V ds / I d .

[0057] Among them, R ds(on) V represents the approximate on-resistance of a power MOSFET. ds I represents the on-state voltage drop between the drain and source of a power MOSFET. d This represents the load current flowing through the power MOSFET.

[0058] The controller can calculate the approximate on-resistance for a single set of electrical parameter sampling data, or it can calculate the approximate on-resistance for multiple consecutive sets of electrical parameter sampling data, and perform averaging or median processing on multiple calculation results to obtain the approximate on-resistance for state judgment.

[0059] The controller acquires the reference on-resistance value corresponding to the power MOSFET. The reference on-resistance value can be the typical on-resistance recorded in the power MOSFET datasheet under the corresponding operating conditions, or it can be a reference on-resistance that has been pre-detected and stored when the power MOSFET is in normal operation.

[0060] The controller determines the degree of deviation of the on-resistance based on the approximate on-resistance and the reference on-resistance value. For example, it can calculate the difference, ratio, or relative increase ratio between the approximate on-resistance and the reference on-resistance value, and use the result as the degree of deviation of the on-resistance.

[0061] The controller compares the deviation of the on-resistance with preset anomaly detection criteria to obtain an anomaly detection result. The preset anomaly detection criteria can be set to a preset multiple by which the approximate on-resistance is greater than the reference value of the on-resistance. For example, when the approximate on-resistance exceeds 150% of the typical value in the datasheet, it can be determined that the deviation of the on-resistance meets the preset anomaly detection criteria.

[0062] When the anomaly determination result indicates that the deviation of the on-resistance does not meet the preset anomaly determination conditions, the controller determines that the power MOSFET is in normal operation; when the deviation of the on-resistance meets the preset anomaly determination conditions, the controller determines that the power MOSFET is in an abnormal operation state and generates an anomaly warning message. The anomaly warning message can indicate that the power MOSFET may be aging, have poor connection contact, insufficient gate drive, or not be in a fully conducting state.

[0063] To reduce misjudgments caused by short-term fluctuations, the controller can determine that the power MOSFET is in an abnormal operating state only after multiple consecutive diagnostic cycles have met the preset abnormal judgment conditions. The abnormal status warning information can be used to prompt maintenance personnel to check or replace the power MOSFET; when the abnormal operating state further meets the preset shutdown conditions, it can also trigger the power MOSFET to shut down.

[0064] This embodiment determines the approximate on-resistance based on the on-state voltage drop and load current, and compares the approximate on-resistance with the on-resistance reference value. This enables the identification of potential risks such as device aging, poor contact, or abnormal conduction from changes in the conduction capability of the power MOSFET, thereby achieving online health diagnosis and fault warning for the core power device.

[0065] In one embodiment, the communication interface uses an I2C communication interface. The controller's I2C peripheral pins are connected to the backplane I2C bus via pull-up resistors, and are connected to the upper-level management system via the backplane I2C bus. The upper-level management system can be a motherboard baseboard managing the controller, which can be configured as an I2C slave device.

[0066] The controller acquires the on-state, on-state voltage drop, load current, and operating status of the power MOSFET to obtain the operating data to be reported. The on-state indicates whether the power MOSFET is currently in the on or off state; the operating status indicates whether the power MOSFET is in normal operation or abnormal operation.

[0067] The controller encapsulates the operational data to be reported according to a preset communication protocol to obtain a hot-swap status data packet. The hot-swap status data packet may include the device address, status identifier, on-state voltage drop data, load current data, operational status identifier, and fault warning identifier.

[0068] According to a preset reporting cycle, the controller sends hot-plug status data packets to the upper-level management system via the I2C communication interface. For example, the controller can update the status register at preset intervals for the upper-level management system to read. The controller can also update the corresponding status and generate status change events when the power MOSFET switches from the off state to the on state, from the normal operation state to the abnormal operation state, or when a fault shutdown occurs.

[0069] The upper-level management system can proactively initiate read requests to query the current on-state voltage drop, load current, operating status, and fault information. Upon receiving a read request, the controller returns the corresponding hot-swap status data packet to the upper-level management system. The handover details clearly document the controller's periodic reporting of monitoring data or its reporting of data upon status changes, as well as its response to queries from the upper-level management system.

[0070] The controller can also receive status query commands or remote control commands from the upper-level management system via the I2C communication interface to obtain system interaction information. This system interaction information is used to trigger subsequent operations such as status queries, parameter settings, on / off control, or shutdown control.

[0071] This embodiment encapsulates the on-state, on-voltage drop, load current, and operating status of the power MOSFET into a hot-swap status data packet, and provides it to the upper-level management system according to a preset cycle or status change event. This transforms the operating status of the hot-swap control unit from invisible to queryable and reportable, providing data support for centralized power management and intelligent operation and maintenance.

[0072] In one embodiment, the controller receives control instructions to be processed from the upper management system via the I2C communication interface, and parses the control instructions to be processed according to the preset communication protocol to obtain the instruction type and instruction parameters.

[0073] The controller identifies the control function corresponding to the control command to be processed based on the command type, and obtains the command identification result. Command types can include status query commands, conduction timing parameter setting commands, conduction control commands, and shutdown control commands.

[0074] When the instruction recognition result indicates that the control instruction to be processed is a status query instruction, the controller determines the data type to be queried based on the instruction parameters, and reads the corresponding on-state voltage drop, load current, on-state, running state or fault information from the current status register or running data storage area to obtain the query result.

[0075] When the instruction recognition result indicates that the control instruction to be processed is a conduction timing parameter setting instruction, the controller extracts the conduction delay time from the instruction parameters and stores the conduction delay time to obtain the updated conduction timing parameters.

[0076] When the instruction recognition result indicates that the control instruction to be processed is a turn-on control instruction, the controller, after confirming that the DC power supply has been connected and there are no fault prohibition conditions, executes a delay timer according to the turn-on timing parameters, and controls the power MOSFET to turn on when the target turn-on time is reached.

[0077] When the instruction recognition result indicates that the control instruction to be processed is a shutdown control instruction, the controller immediately generates a shutdown control signal and shuts down the power MOSFET through the MOSFET drive circuit. Remote shutdown can be used for system maintenance, load isolation, or for the upper-level management system to execute load power-off according to the overall power management strategy.

[0078] After executing the corresponding hot-swap control operation, the controller obtains the command execution result. The command execution result may include a success flag, a failure flag, a failure reason, the current conduction timing parameters, or the current power MOSFET state. The controller sends the command execution result to the upper-level management system via the I2C communication interface, enabling the upper-level management system to confirm the execution status of the control command.

[0079] In one implementation, the shutdown control command has a higher execution priority than the turn-on control command and parameter setting command, so as to cut off the power supply to the load in a timely manner in an emergency.

[0080] This embodiment enables the upper-level management system to query, configure, and intervene in the hot-swap control process by identifying and executing different types of remote control commands such as status query, conduction timing parameter setting, conduction control, and shutdown control, thereby incorporating individual hot-swap control units into the system-level power management strategy.

[0081] In one embodiment, the controller compares the load current with preset overcurrent conditions to obtain a load fault determination result. The preset overcurrent conditions may include an instantaneous overcurrent threshold and a continuous overcurrent threshold. When the load current exceeds the instantaneous overcurrent threshold, the controller can immediately determine that an overcurrent fault has occurred; when the load current exceeds the continuous overcurrent threshold and reaches a preset duration, the controller can also determine that an overcurrent fault has occurred.

[0082] The controller determines whether a fault shutdown of the power MOSFET is necessary based on the relationship between the power MOSFET's operating state and preset shutdown conditions, thus obtaining a device shutdown judgment result. Preset shutdown conditions may include a deviation in on-resistance exceeding a preset shutdown threshold, or the power MOSFET being in an abnormal operating state for multiple consecutive diagnostic cycles.

[0083] When the power MOSFET meets the abnormal state warning condition but has not yet met the preset shutdown condition, the controller can generate an abnormal state warning message and continue monitoring; when the abnormality of the power MOSFET meets the preset shutdown condition, the controller determines that a fault shutdown needs to be performed.

[0084] When the load fault judgment result indicates that an overcurrent fault has occurred, the device shutdown judgment result indicates that a fault shutdown needs to be performed, or the controller receives a shutdown command sent by the superior management system, the controller generates a shutdown control signal.

[0085] The controller sets the control port connected to the MOSFET drive circuit to the off state, causing the MOSFET drive circuit to control the power MOSFET to turn off, thus cutting off the main power supply path between the DC power input and the load. The manual describes that upon detecting a serious fault or receiving a shutdown command, the controller immediately turns off the power MOSFET and cuts off the load power supply.

[0086] After executing the shutdown, the controller can confirm that the power MOSFET has been turned off based on the feedback of the power MOSFET's on-state or the on-state voltage drop detection result, thus obtaining the shutdown execution status. For example, when the controller outputs a shutdown control signal and detects that the power MOSFET is no longer in a low on-state voltage drop state, it can determine that the shutdown operation has been performed.

[0087] The controller generates shutdown information based on load fault assessment results, device shutdown assessment results, and shutdown execution status. Shutdown information may include overcurrent fault identifiers, device anomaly identifiers, remote shutdown identifiers, shutdown time, and shutdown execution result. The controller sends the shutdown information to the upper-level management system via a communication interface, allowing the upper-level management system to record the fault, alert maintenance personnel, or adjust the power supply strategy for other load modules.

[0088] This embodiment simultaneously judges the load overcurrent, abnormal operation status of the power MOSFET, and remote shutdown command, and promptly cuts off the load power supply and reports the shutdown information when the shutdown conditions are met, thereby reducing the risk of the fault spreading to other power supply modules or loads.

[0089] like Figure 2As shown, in one embodiment, the intelligent hot-swap control system for the DC power supply includes a controller, a communication interface, a MOSFET drive circuit, a power MOSFET, a soft-start resistor, a forward voltage drop detection circuit, and a load current detection circuit.

[0090] The controller can be a microcontroller with at least two analog-to-digital conversion channels, one I2C slave interface, timers, and multiple general-purpose input / output ports. The controller is used to execute control programs, process detection data, control the on / off state of power MOSFETs, and communicate with the upper-level management system.

[0091] The communication interfaces are connected to both the controller and the upper-level management system. When the communication interface is an I2C interface, the controller's serial data line and serial clock line are connected to the backplane I2C bus via pull-up resistors, thus forming a bidirectional communication channel between the controller and the upper-level management system.

[0092] The MOSFET driver circuit is connected between the controller's control port and the gate of the power MOSFET, and is used to convert the logic control signals output by the controller into the gate drive signals required by the power MOSFET. The MOSFET driver circuit can use a dedicated gate driver chip or a push-pull driver circuit composed of discrete transistors.

[0093] A power MOSFET is connected in series between the DC power input and the load, acting as a controlled electronic switch. The drain of the power MOSFET is connected to the DC power input, the source is connected to the load, and the gate is connected to the MOSFET driver circuit. When the power MOSFET is turned on, it establishes the main power supply path between the DC power input and the load; when the power MOSFET is turned off, it cuts off the main power supply path.

[0094] The soft-start resistor is connected in parallel between the drain and source of the power MOSFET. When the power MOSFET is off and the DC power supply is connected, the soft-start resistor is used to precharge the input capacitor at the load end and limit the inrush current; after the power MOSFET is turned on, the power MOSFET forms a low-resistance path and bypasses the soft-start resistor.

[0095] The on-state voltage drop detection circuit is connected between the drain and source of the power MOSFET and is linked to the analog-to-digital conversion channel of the controller. The on-state voltage drop detection circuit can employ a high-precision resistor divider network or a differential detection circuit to convert the voltage difference between the drain and source of the power MOSFET into a voltage signal that the controller can safely acquire.

[0096] The load current sensing circuit is used to detect the load current flowing through the power MOSFET and is connected to another analog-to-digital conversion channel of the controller. The load current sensing circuit can use a high-side current sensing chip or a sensing structure combining a precision sampling resistor and a differential amplifier.

[0097] After the system is powered on, the controller completes the initialization of the general-purpose input / output ports, analog-to-digital conversion channels, communication interfaces and timers, keeps the power MOSFETs off, and reports the ready status to the upper-level management system through the communication interface.

[0098] The controller acquires hot-plug control parameters, including turn-on timing parameters, through the communication interface, and also obtains the power connection status of the DC power input. When the power connection status indicates that the DC power supply has been connected, the controller determines the target turn-on time based on the turn-on timing parameters, and controls the power MOSFET to turn on through the MOSFET drive circuit at the target turn-on time.

[0099] After the power MOSFET is turned on, the controller obtains the on-state voltage drop and load current through the on-state voltage drop detection circuit and the load current detection circuit, respectively, and determines the on-resistance characterization parameter based on the on-state voltage drop and load current. The controller determines the operating state of the power MOSFET based on the relationship between the on-resistance characterization parameter and the on-resistance reference value.

[0100] The controller also reports hot-swap operation information to the upper-level management system via the communication interface and receives control commands sent by the upper-level management system. When the operating status of the power MOSFET meets the preset fault conditions, the load current meets the preset overcurrent conditions, or a shutdown command is received, the controller shuts down the power MOSFET through the MOSFET drive circuit and reports the corresponding shutdown information to the upper-level management system.

[0101] This embodiment integrates pre-charging, programmable delayed turn-on, real-time electrical parameter detection, power MOSFET health diagnosis, remote control, and fault shutdown into a single hot-swappable control system through the coordinated operation of the controller, communication interface, MOSFET drive circuit, power MOSFET, soft-start resistor, on-state voltage drop detection circuit, and load current detection circuit. This improves the power supply reliability, control flexibility, and maintenance convenience in DC power supply scenarios such as servers, storage devices, and communication equipment.

[0102] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

Claims

1. An intelligent hot-swappable control method for a DC power supply, characterized in that, The method includes: Obtain the hot-swap control parameters corresponding to the power MOSFET, wherein the power MOSFET is connected in series between the DC power input terminal and the load, and the hot-swap control parameters include the turn-on timing parameters; In response to the detection of a DC power supply access event, the target turn-on time of the power MOSFET is determined according to the turn-on timing parameters, and a turn-on control signal is output to the drive circuit corresponding to the power MOSFET at the target turn-on time to control the power MOSFET to turn on and establish a power supply path between the DC power supply input terminal and the load; After the power MOSFET is turned on, the on-state voltage drop of the power MOSFET and the load current flowing through the power MOSFET are collected. The on-resistance characterization parameter of the power MOSFET is determined based on the on-state voltage drop and the load current, and the operating state of the power MOSFET is determined based on the on-resistance characterization parameter. The system reports hot-swap operation information to the upper-level management system through the communication interface and receives control commands sent by the upper-level management system. The hot-swap operation information includes the operating status of the power MOSFET and at least one of the on-state voltage drop and the load current. When the operating state of the power MOSFET meets the preset fault conditions, or when a shutdown command is received from the upper-level management system, the power MOSFET is controlled to be turned off, and the corresponding shutdown information is reported to the upper-level management system.

2. The intelligent hot-swap control method for DC power supply according to claim 1, characterized in that, The hot-plug control parameters corresponding to the power MOSFET are obtained, including: The system receives parameter setting instructions sent by the superior management system through the communication interface to obtain the control instructions to be parsed. The control command to be parsed is parsed to obtain the turn-on delay time corresponding to the power MOSFET; Store the conduction delay time to obtain the conduction timing parameters; The parameter setting results, including the conduction timing parameters, are sent to the upper-level management system to complete the setting of the hot-swap control parameters.

3. The intelligent hot-swappable control method for DC power supply according to claim 1, characterized in that, The step of determining the target turn-on time of the power MOSFET based on the turn-on timing parameters in response to the detection of a DC power supply connection event includes: The input voltage at the input terminal of the DC power supply is collected to obtain the input voltage detection result; Based on the relationship between the input voltage detection result and the preset effective voltage condition, the power supply connection status of the DC power supply input terminal is determined; When the power supply access status indicates that the DC power supply has been connected, a DC power supply access event is generated, and a delay timer is started to obtain the delay timer duration. The delay timing duration is compared with the conduction delay time corresponding to the conduction timing parameter to obtain the delay comparison result; When the delay comparison result indicates that the delay timing duration has reached the conduction delay time, the current time is determined as the target conduction time.

4. The intelligent hot-swappable control method for DC power supply according to claim 1, characterized in that, A soft-start resistor is connected in parallel between the drain and source of the power MOSFET. The step of outputting a turn-on control signal to the drive circuit corresponding to the power MOSFET at the target turn-on time includes: After detecting the DC power supply access event, the power MOSFET is kept in the off state, so that the DC power supply input terminal precharges the input capacitor of the load terminal through the soft start resistor, forming a load precharge path. Based on the target turn-on time, determine whether the power MOSFET meets the turn-on condition, and obtain the turn-on condition determination result; When the conduction condition judgment result indicates that the power MOSFET meets the conduction condition, the conduction control signal is output to the drive circuit; The driving circuit controls the power MOSFET to turn on according to the turn-on control signal, thereby bypassing the soft-start resistor and forming the main power supply path for the load.

5. The intelligent hot-swappable control method for DC power supply according to claim 1, characterized in that, The process of acquiring the on-state voltage drop of the power MOSFET and the load current flowing through the power MOSFET, and determining the on-resistance characterization parameter of the power MOSFET based on the on-state voltage drop and the load current, includes: The voltage difference between the drain and source of the power MOSFET is collected by the on-state voltage drop detection circuit to obtain the on-state voltage drop sampling data. The load current flowing through the power MOSFET is collected by the load current detection circuit to obtain load current sampling data; Based on the on-state voltage drop sampling data and the load current sampling data, electrical parameter sampling data corresponding to the power MOSFET is generated; Based on the correspondence between the on-state voltage drop and the load current in the electrical parameter sampling data, the on-resistance characterization parameter of the power MOSFET is determined.

6. The intelligent hot-swappable control method for DC power supply according to claim 5, characterized in that, The step of determining the on-resistance characterization parameter of the power MOSFET based on the correspondence between the on-state voltage drop and the load current in the electrical parameter sampling data, and determining the operating state of the power MOSFET based on the on-resistance characterization parameter, includes: The approximate on-resistance of the power MOSFET is determined based on the ratio between the on-state voltage drop and the load current. Obtain the reference value of the on-resistance corresponding to the power MOSFET, and determine the degree of deviation of the on-resistance based on the approximate on-resistance and the reference value of the on-resistance; The deviation of the on-resistance is compared with the preset anomaly determination conditions to obtain the anomaly determination result; When the anomaly determination result indicates that the deviation of the conduction resistance meets the preset anomaly determination condition, it is determined that the power MOSFET is in an abnormal operating state, and a corresponding state anomaly warning information is generated.

7. The intelligent hot-swappable control method for DC power supply according to claim 1, characterized in that, The communication interface is an I2C communication interface. The process of reporting hot-plugging operation information to the higher-level management system and receiving control commands from the higher-level management system via this interface includes: The on-state, on-state voltage drop, load current, and operating status of the power MOSFET are obtained to generate the operating data to be reported. The operation data to be reported is encapsulated according to a preset communication protocol to obtain a hot-pluggable status data packet; Based on the preset reporting period or the detected operational status change event, the hot-plug status data packet is sent to the upper-level management system through the I2C communication interface to obtain the operational information reporting result. The system receives status query commands or remote control commands sent by the superior management system through the I2C communication interface, and obtains system interaction information.

8. The intelligent hot-swappable control method for DC power supply according to claim 7, characterized in that, The process of receiving status query commands or remote control commands sent by the superior management system through the I2C communication interface to obtain system interaction information includes: Receive the pending control instructions sent by the superior management system, and parse the pending control instructions to obtain the instruction type and instruction parameters; Based on the instruction type, determine whether the control instruction to be processed is a status query instruction, a conduction timing parameter setting instruction, a conduction control instruction, or a shutdown control instruction, and obtain the instruction identification result; Based on the instruction recognition result and the instruction parameters, the corresponding hot-plug control operation is executed to obtain the instruction execution result; The execution result of the instruction is sent to the upper-level management system through the I2C communication interface to obtain the system interaction information.

9. The intelligent hot-swappable control method for DC power supply according to claim 1, characterized in that, The step of controlling the power MOSFET to turn off when the operating state of the power MOSFET meets a preset fault condition, or when a shutdown command is received from the upper-level management system, includes: The load current is compared with the preset overcurrent condition to obtain the load fault judgment result; Based on the relationship between the operating state of the power MOSFET and the preset turn-off conditions, it is determined whether the power MOSFET needs to be shut down due to a fault, and the device turn-off judgment result is obtained. When the load fault judgment result indicates that the load has an overcurrent fault, the device shutdown judgment result indicates that the fault shutdown needs to be performed, or the shutdown command is received, a shutdown control signal is generated; The power MOSFET is turned off by controlling the drive circuit according to the shutdown control signal, thereby obtaining a shutdown execution state; The shutdown information is generated based on the load fault judgment result, the device shutdown judgment result, and the shutdown execution status, and then sent to the upper-level management system.

10. An intelligent hot-swappable control system for a DC power supply, characterized in that, Includes a controller, communication interface, MOSFET driver circuit, power MOSFET, soft-start resistor, on-state voltage drop detection circuit, and load current detection circuit; The communication interface, the MOSFET driving circuit, the on-state voltage drop detection circuit, and the load current detection circuit are respectively connected to the controller, and the MOSFET driving circuit is connected to the gate of the power MOSFET. The power MOSFET is connected in series between the DC power input terminal and the load, and the soft-start resistor is connected in parallel between the drain and source of the power MOSFET. The soft-start resistor is used to pre-charge the load terminal before the power MOSFET is turned on. The on-state voltage drop detection circuit is connected between the drain and source of the power MOSFET to detect the on-state voltage drop of the power MOSFET, and the load current detection circuit is used to detect the load current flowing through the power MOSFET. The controller is used to obtain the hot-plug control parameters corresponding to the power MOSFET through the communication interface, and the hot-plug control parameters include the turn-on timing parameters; The controller is also used to obtain the power access status of the DC power input terminal. When the power access status indicates that the DC power is connected, the controller determines the target turn-on time of the power MOSFET according to the turn-on timing parameters, and controls the power MOSFET to turn on through the MOSFET driving circuit at the target turn-on time. The controller is further configured to, after the power MOSFET is turned on, obtain the on-state voltage drop and the load current through the on-state voltage drop detection circuit and the load current detection circuit respectively, determine the on-state resistance characterization parameter of the power MOSFET based on the on-state voltage drop and the load current, and determine the operating state of the power MOSFET based on the on-state resistance characterization parameter; The controller is also used to report hot-swap operation information to the upper-level management system through the communication interface and receive control commands sent by the upper-level management system. When the operating state of the power MOSFET meets the preset fault conditions or a shutdown command is received, the controller controls the power MOSFET to shut down through the MOSFET drive circuit and reports the corresponding shutdown information to the upper-level management system.

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