Silicon column pattern correction method, device and equipment

Abstract

The application relates to the technical field of integrated circuit design, and discloses a silicon column pattern correction method, device and equipment, wherein the method comprises the following steps: acquiring silicon column design information, wherein the silicon column design information comprises a silicon column diameter; searching for a target polygon matching the silicon column diameter in a polygon set, wherein the larger the silicon column diameter is, the more the number of edges of the target polygon is, the polygons in the polygon set are regular polygons, and the number of edges of each regular polygon is a power of 2; drawing the target polygon in a pattern data file, and correcting the target polygon to obtain a mask pattern, wherein the mask pattern is used for preparing a mask plate of the silicon column, photolithography is performed according to the mask plate, an etching mask can be obtained, etching is performed according to the etching mask, and the silicon column can be obtained, and the correction is used for compensating for partial pattern deformation generated in the photolithography and etching processes. The method can improve the size precision of a super surface.

Description

Technical Field

[0001] This application relates to the field of integrated circuit design technology, and in particular to a method, apparatus and device for correcting silicon pillar patterns. Background Technology

[0002] Metasurfaces are primarily used to control the phase, amplitude, and polarization of electromagnetic waves (such as light and terahertz waves). In the graphic data files of metasurfaces, some structural patterns have relatively short side lengths. When fabricating the mask for the metasurface based on these graphic data files, it is impossible to precisely process these shorter side lengths, resulting in some critical dimensions of the metasurface failing to meet accuracy requirements. Summary of the Invention

[0003] This application provides a silicon pillar pattern correction method, a silicon pillar pattern correction device, a computer device, and a readable storage medium, which can improve the dimensional accuracy of metasurfaces.

[0004] To achieve the above objectives, the main technical solutions adopted in this application include: In a first aspect, embodiments of this application provide a method for correcting silicon pillar patterns, the method comprising: Obtain silicon pillar design information, including silicon pillar diameter; The target polygon that matches the diameter of the silicon pillar is found in the polygon set. The larger the diameter of the silicon pillar, the more sides the target polygon has. The polygons in the polygon set are regular polygons, and the number of sides of each regular polygon is a power of 2. The target polygon is drawn in the graphic data file and modified to obtain a mask pattern. The mask pattern is used to prepare a mask for silicon pillars. Photolithography is performed based on the mask to obtain an etching mask. Etching is performed based on the etching mask to obtain the silicon pillars. The modification is used to compensate for some pattern deformations generated during photolithography and etching.

[0005] Secondly, embodiments of this application provide a silicon pillar pattern correction device, the device comprising: The information acquisition module is used to acquire silicon pillar design information, including the silicon pillar diameter; The search module is used to search for a target polygon in a polygon set that matches the diameter of the silicon pillar, wherein the larger the diameter of the silicon pillar, the more sides the target polygon has, and the polygons in the polygon set are regular polygons, and the number of sides of each regular polygon is a power of 2. The correction module is used to draw the target polygon in the graphic data file and correct the target polygon to obtain a mask pattern. The mask pattern is used to prepare a mask for silicon pillars. Photolithography is performed based on the mask to obtain an etching mask. Etching is performed based on the etching mask to obtain the silicon pillars. The correction is used to compensate for some pattern deformations generated during photolithography and etching.

[0006] Thirdly, embodiments of this application provide a computer device, including: A memory and a processor are communicatively connected, the memory storing computer instructions, and the processor executing the computer instructions to perform the silicon pillar patterning correction method as described in any of the preceding claims.

[0007] Fourthly, embodiments of this application provide a computer-readable storage medium storing computer instructions that cause a computer to perform the silicon pillar pattern correction method as described in any of the preceding claims.

[0008] In some embodiments of this application, firstly, the larger the diameter of the silicon pillar, the more sides the target polygon has. This ensures the silicon pillar pattern has sufficiently long sides, avoiding the problem of the mask manufacturing equipment being unable to accurately draw the side length of the silicon pillar pattern. Simultaneously, as the silicon pillar diameter increases, the number of sides of the target polygon increases, ensuring the smoothness of the etched pattern's edges and making the etched pattern closer to a circle. Secondly, the number of sides of the regular polygon is a power of 2, ensuring that the angle of each side of the regular polygon meets the angle requirements of the optical proximity correction system. Thus, in the pattern data file, there is no need to perform a step-type Manhattan pattern conversion on the silicon pillar pattern, effectively avoiding the problem of short side lengths of the silicon pillar pattern and ensuring that the mask manufacturing equipment can accurately draw the side length of the silicon pillar pattern. Based on these two aspects, this application can improve the dimensional accuracy of metasurfaces. Attached Figure Description

[0009] To more clearly illustrate the technical solutions in the specific embodiments of this application or the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0010] Figure 1 Schematic diagram of metasurfaces provided for some embodiments of this application; Figure 2 A schematic diagram of graphical data files used in some technologies; Figure 3A schematic diagram of a stepped Manhattan graphic provided for some embodiments of this application; Figure 4 A schematic diagram of etched patterns provided for some embodiments of this application; Figure 5 A schematic flowchart of a silicon pillar pattern correction method provided for some embodiments of this application; Figure 6 A comparative diagram showing the matching of different regular polygons to the same silicon pillar diameter; Figure 7 A comparative diagram showing the matching of different regular polygons to different silicon pillar diameters; Figure 8 Schematic diagram of a silicon pillar pattern correction device provided for some embodiments of this application; Figure 9 This is a schematic diagram of the structure of a computer device provided in an embodiment of this application. Detailed Implementation

[0011] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0012] See also Figure 1 The diagram shows a metasurface 100 provided for some embodiments of this application. Figure 1 In this process, the metasurface 100 includes multiple silicon pillars 11 arranged in an array. By designing the geometry, size, arrangement, and spatial orientation of the silicon pillars 11, the phase, amplitude, and polarization of electromagnetic waves can be precisely controlled.

[0013] Currently, in some technologies, silicon pillars are designed as cylinders. The fabrication process of metasurfaces is as follows: 1) Simulate the propagation process of electromagnetic waves on metasurfaces.

[0014] Specifically, during the simulation, at least some of the silicon pillar design parameters of the metasurface can be adjusted to obtain the correspondence between the electromagnetic wave parameters and the silicon pillar design parameters. The silicon pillar design parameters include, but are not limited to, the spacing between adjacent silicon pillars, the diameter, coordinates, geometry, size, and spatial orientation of each silicon pillar. The electromagnetic wave parameters include, but are not limited to, the phase, amplitude, and polarization of the electromagnetic wave.

[0015] If the electromagnetic wave parameters reach the control target, the corresponding silicon pillar design parameters are used as the silicon pillar design information. If the electromagnetic wave parameters do not reach the control target, the silicon pillar design parameters are adjusted further, and the simulation continues. The control target represents the actual electromagnetic wave parameters required. For example, assuming the control target is phase = 30°, amplitude = 0.6°, and polarization = 0.1°, if one set of electromagnetic wave parameters obtained from the simulation reaches this control target, the corresponding silicon pillar design parameters are used as the silicon pillar design information.

[0016] 2) Based on the silicon pillar design information, draw the two-dimensional projection graphics of each silicon pillar in the Graphic Data System (GDS) file. In the following description of this application, the two-dimensional projection graphics will be referred to as silicon pillar graphics.

[0017] Specifically, when the silicon ingot is cylindrical, the silicon ingot graphic in the graphics data file is circular, but the graphics data file does not support drawing curved graphics. Therefore, some techniques use near-circular polygons as silicon ingot graphics. For example, see [reference needed]. Figure 2 This is a schematic diagram of graphical data files used in some technologies. From Figure 2 As can be seen, by making each side of the polygon short enough, each silicon cylinder graphic can be made infinitely close to a circle, thus solving the problem that the graphic data file does not support drawing curves.

[0018] In theory, photomask manufacturing equipment uses lasers or high-energy electron beams to bombard a substrate, transferring patterns from a graphic data file onto the substrate to obtain a photomask. A photomask includes transparent and opaque areas; for example, the patterned area can be transparent, and the non-patterned area can be opaque. Using the photomask as a mask, the light beam emitted by the lithography machine passes through the transparent area of ​​the photomask, performing photolithography on the photoresist, thereby transferring the pattern from the photomask to the photoresist, resulting in an etching mask. Using the etching mask as a mask, etching a silicon substrate yields silicon pillars. The silicon pillars across the entire silicon substrate constitute a metasurface.

[0019] However, during the photolithography process described above, light diffraction occurs, causing deformation of the photoresist pattern. For example, the edges of the mask pattern may be right angles, while the edges of the photoresist pattern may be rounded. Furthermore, the lines of the photoresist pattern may undergo lateral deformation, resulting in the line width of the photoresist pattern being greater or less than the line width of the mask pattern. Similarly, during the etching process described above, lateral etching also occurs, causing the line width of the etched pattern to be greater than the line width of the photoresist pattern.

[0020] To ensure that the final etched pattern is consistent with the pattern in the pattern data file, after drawing the silicon pillar pattern in the pattern data file, you can first perform the following step 3).

[0021] 3) Based on the Optical Proximity Correction (OPC) system, the silicon pillar pattern in the graphic data file is corrected to offset some of the pattern deformation caused during photolithography and etching.

[0022] Specifically, the deformation magnitude d1 of the etched pattern can be pre-assessed through etching experiments, and the deformation magnitude d2 of the photoresist pattern can be pre-assessed through photolithography simulation. Based on the deformation magnitude d1 and the silicon pillar pattern, the size of the photolithographic pattern can be determined. Based on the size of the photolithographic pattern and the deformation magnitude d2, the correction amount for the silicon pillar pattern can be determined. For example, assuming the original width of the silicon pillar pattern is d0. Based on etching experiments, it is determined that the lines will widen by d1 during etching, meaning that without correction, the area of ​​the etched pattern is smaller than the area of ​​the silicon pillar pattern (because the lines expand laterally). Based on photolithography experiments, it is determined that the lines will narrow by d2 during photolithography, meaning that without correction, the area of ​​the photolithographic pattern is larger than the area of ​​the silicon pillar pattern. Therefore, in practical applications, the area of ​​the photolithographic pattern can be determined first based on the original width d0 of the silicon pillar pattern and the line deformation d1 during etching. The area of ​​the photolithographic pattern can be larger than the area of ​​the etched pattern, thus offsetting the problem of the pattern area shrinking during etching. Based on the area of ​​the lithographic pattern, the width of the lithographic pattern can be determined. Then, based on the width of the lithographic pattern and the line deformation d2 during the lithography process, the correction amount for the silicon pillar pattern can be determined. The corrected silicon pillar pattern can compensate for lithographic errors, resulting in the desired lithographic pattern area.

[0023] Furthermore, due to the angular deformation generated during photolithography (that is, transforming right-angled corners into rounded corners), the etched pattern can be made closer to a circle and fit better with the two-dimensional projection pattern of the silicon pillar. Therefore, in practical applications, it is not necessary to modify the silicon pillar pattern to address this deformation. In this way, the photolithographic deformation can be effectively utilized.

[0024] Based on the corrected graphics data file, the following operations can be performed: Generate a mask; Photolithography is performed based on the mask to obtain an etching mask; Etching is performed using an etching mask to obtain a metasurface composed of silicon pillars.

[0025] In the aforementioned technology, the optical proximity correction system requires the polygon's side angles to be 45 degrees or a diffraction angle of 45 degrees. Here, the side angle refers to the angle between a single side of the polygon and a coordinate axis (such as the horizontal X-axis). The diffraction angle is the angle obtained using a 45-degree bisection angle as the reference step angle. Specifically, the bisection angle of 45 degrees is 22.5 degrees. The diffraction angle is k*22.5 degrees, such as 0 degrees, 22.5 degrees, 45 degrees, 67.5 degrees, and 90 degrees, where k is an integer greater than or equal to 0.

[0026] In practical applications, the polygons used as silicon pillar patterns in graphics data files may not meet the aforementioned edge angle requirements, thus making pattern correction based on optical proximity correction systems impossible. Therefore, some techniques convert the polygons in the graphics data files into polygons that are more similar to silicon pillars. Figure 3 A similar stepped Manhattan pattern. The stepped Manhattan pattern only has horizontal and vertical lines, and its side angles meet the side angle requirements of the optical proximity correction system. Based on the corrected stepped Manhattan pattern, the final etched pattern is similar to... Figure 4 Similarly, it can be seen that after light diffraction in photolithography, the edges of the etched pattern are smoother than those of the stepped Manhattan pattern, and are closer to the actual silicon pillar pattern. In these techniques, on the one hand, using near-circular polygons as silicon pillar patterns may result in relatively short sides for each polygon; on the other hand, when converting polygons to stepped Manhattan patterns, each side of the stepped Manhattan pattern may also be relatively short. When the mask manufacturing equipment draws the silicon pillar pattern from the pattern data file onto the substrate, if the side length of the pattern is too short, it may exceed the equipment's accuracy, causing a significant deviation between the drawn silicon pillar pattern's side length and the actual side length. This, in turn, leads to deviations in the critical dimensions of the metasurface, resulting in lower accuracy.

[0027] Therefore, this application provides a silicon pillar pattern correction method, which can improve the dimensional accuracy of metasurfaces. The silicon pillar pattern correction method can be applied to electronic devices. These electronic devices may include, but are not limited to, tablet computers, laptops, desktop computers, servers, controllers, etc. (See also...) Figure 5 This is a flowchart illustrating a silicon pillar pattern correction method provided in some embodiments of this application. Figure 5 In this paper, the silicon pillar pattern correction method includes the following steps: Step S501: Obtain silicon pillar design information, including silicon pillar diameter.

[0028] Specifically, similar to some technologies, the propagation process of electromagnetic waves on metasurfaces can be simulated to obtain silicon pillar design information, which will not be elaborated here.

[0029] The silicon pillar is a cylinder, and its diameter is the diameter corresponding to the two-dimensional projection of the silicon pillar.

[0030] Step S502: Find a target polygon in the polygon set that matches the diameter of the silicon pillar. The larger the diameter of the silicon pillar, the more sides the target polygon has. The polygons in the polygon set are regular polygons, and the number of sides of each regular polygon is a power of 2.

[0031] Specifically, the polygons in the polygon set can include, but are not limited to, regular quadrilaterals, regular octagons, and regular hexagons. In the graphics data file, a target polygon matching the diameter of the silicon cylinder can be used as the silicon cylinder graphic.

[0032] See also Figure 6 This is a comparative illustration of different regular polygons matching the same silicon pillar diameter. Assume... Figure 6 The dashed circles in the diagram represent the true two-dimensional projection of the silicon pillar. Using a square as the silicon pillar pattern results in a longer side length, which facilitates pattern drawing by the mask manufacturing equipment, leading to a higher precision mask. However, the edge smoothness of the etched pattern is insufficient. Using a regular octagon as the silicon pillar pattern results in a shorter side length, which is less conducive to pattern drawing by the mask manufacturing equipment, resulting in a less precise mask. However, the edge smoothness of the etched pattern is higher.

[0033] In view of this, in conjunction with the reference Figure 7 This is a comparative illustration showing different regular polygons matched to different silicon pillar diameters. (Example) Figure 7 As shown, when the silicon pillar diameter is small, a regular quadrilateral with fewer sides can be used as the silicon pillar pattern. This ensures, on the one hand, that the side length of the silicon pillar pattern is long enough to improve the pattern drawing accuracy of the photomask manufacturing equipment; on the other hand, with a small silicon pillar diameter, the matching regular quadrilateral is also relatively small, so even if the edges of the quadrilateral are sharp, the smoothness of the etched pattern's edges will not be affected. Conversely, when the silicon pillar diameter is large, a regular hexagon with more sides can be used as the silicon pillar pattern. This ensures that the side length of the silicon pillar pattern meets the accuracy requirements of the photomask manufacturing equipment, while improving the smoothness of the etched pattern's edges.

[0034] In this embodiment, the number of sides of the regular polygon is a power of 2, which ensures that the angle of each side of the regular polygon meets the side angle requirements of the optical proximity correction system. Thus, the regular polygon is compatible with the optical proximity correction system, eliminating the need to convert it into a stepped Manhattan shape, thereby avoiding the problem of short side lengths.

[0035] Step S503: Draw the target polygon in the graphic data file and correct the target polygon to obtain the mask pattern. The mask pattern is used to prepare the mask for the silicon pillar. Photolithography is performed based on the mask to obtain the etching mask. Etching is performed based on the etching mask to obtain the silicon pillar. The correction is used to compensate for some pattern deformations generated during the photolithography and etching processes.

[0036] Specifically, the target polygon in this application is a regular polygon with central symmetry. After rounding the edges, its outline shape can be ensured to be close to a circle. When correcting the target polygon, it is necessary to ensure that this central symmetry is not destroyed, thereby ensuring that the etched pattern is close to a circle. Based on the above description, when correcting the target polygon, it can be concentrically scaled proportionally. Concentrically scaling proportionally means scaling the target polygon as a whole with its center as the reference position. In this way, the outline shape of the target polygon will not change, thereby ensuring the accuracy of the etched pattern.

[0037] In summary, in the technical solutions of some embodiments of this application, firstly, the larger the diameter of the silicon pillar, the more sides the target polygon has. This ensures that the side length of the silicon pillar pattern is sufficiently long, avoiding the problem of the mask manufacturing equipment being unable to accurately draw the side length of the silicon pillar pattern. Simultaneously, as the diameter of the silicon pillar increases, the number of sides of the target polygon increases, ensuring the smoothness of the etched pattern's edges and making the etched pattern closer to a circle. Secondly, the number of sides of the regular polygon is a power of 2, ensuring that the angle of each side of the regular polygon meets the angle requirements of the optical proximity correction system. Thus, in the pattern data file, there is no need to perform a step-type Manhattan pattern conversion on the silicon pillar pattern, effectively avoiding the problem of short side lengths of the silicon pillar pattern and ensuring that the mask manufacturing equipment can accurately draw the side length of the silicon pillar pattern. Based on the above two aspects, this application can improve the dimensional accuracy of metasurfaces.

[0038] In some embodiments, step S502, finding a target polygon in the polygon set that matches the diameter of the silicon pillar, includes: If the diameter of the silicon pillar is smaller than the first preset diameter, the target polygon is a regular quadrilateral. If the diameter of the silicon pillar is greater than or equal to the first preset diameter and less than the second preset diameter, the target polygon is a regular octagon. If the diameter of the silicon pillar is greater than or equal to the second preset diameter, the target polygon is a regular hexagon.

[0039] Specifically, the first preset diameter can be 150 nanometers, and the second preset diameter can be 250 nanometers. That is, when the silicon pillar diameter is less than 150 nanometers, the target polygon is a regular quadrilateral; when the silicon pillar diameter is greater than or equal to 150 nanometers and less than 250 nanometers, the target polygon is a regular octagon; and when the silicon pillar diameter is greater than or equal to 250 nanometers, the target polygon is a regular hexagon. In practical applications, the first and second preset diameters can be set according to actual needs, and this application does not impose any restrictions on this.

[0040] In some embodiments, step S503, modifying the target polygon to obtain a mask pattern, includes: Obtain the lateral etch amount during the etching process; Based on the lateral erosion amount, the reference polygon is expanded to obtain the offset polygon. The reference polygon and the target polygon have the same shape and size. Using the offset polygon as a reference for the lithography result, the target polygon is concentrically scaled proportionally.

[0041] Specifically, the lateral etch amount characterizes the reduction in pattern size during the etching process. After expanding the reference polygon according to the lateral etch amount, the offset polygon becomes the desired lithographic pattern. Using the offset polygon as the post-lithographic pattern (i.e., the lithographic result reference) and the target polygon as the pre-lithographic pattern, combined with the possible pattern deformation during the lithography process, the concentric proportional scaling amount of the target polygon can be determined.

[0042] Furthermore, etching experiments can be conducted in advance based on different etching processes and patterns of different sizes. Based on the experimental results, a correspondence can be established between the etching process, pattern size, and lateral lateral etching amount. The corresponding lateral lateral etching amount can be retrieved from this correspondence based on the pattern size and etching process of the target polygon.

[0043] In the above embodiments, an offset polygon is first generated based on the lateral etching amount during the etching process. Then, the offset polygon is used as a constraint condition for the photolithography result, and the target polygon is concentrically scaled proportionally. In this way, the deformation generated during photolithography and etching can be accurately compensated.

[0044] In some embodiments, the above-mentioned method of using the offset polygon as a reference for the lithography result and performing concentric scaling of the target polygon includes: The information of the target polygon is input into the photolithography simulation model to obtain the photolithography simulation pattern; Based on the graphic deviation between the lithographic simulation graphic and the offset polygon, the target polygon is concentrically scaled proportionally.

[0045] Specifically, through photolithography simulation, the graphic deformation that may occur during the photolithography process can be determined. By combining the graphic differences between the offset polygon and the target polygon, the scaling ratio can be determined, and then the target polygon can be concentrically scaled proportionally based on this scaling ratio.

[0046] In some embodiments, the above-mentioned method of concentrically scaling the target polygon based on the graphic deviation between the photolithographic simulation pattern and the offset polygon includes: If the lithographic simulation pattern is larger than the offset polygon, the target polygon is concentrically and proportionally reduced.

[0047] If the lithographic simulation pattern is smaller than the offset polygon, the target polygon is enlarged concentrically and proportionally.

[0048] In this way, the pattern after photolithography can be kept consistent with the offset polygon.

[0049] Corresponding to the silicon pillar pattern correction method, this application also provides a silicon pillar pattern correction apparatus. (See also...) Figure 8 This is a schematic diagram of a silicon pillar pattern correction device provided in some embodiments of this application. Figure 8 In the process, the silicon pillar patterning correction device includes: The information acquisition module 801 is used to acquire silicon pillar design information, including the silicon pillar diameter. The lookup module 802 is used to find a target polygon in the polygon set that matches the diameter of the silicon cylinder. The larger the diameter of the silicon cylinder, the more sides the target polygon has. The polygons in the polygon set are regular polygons, and the number of sides of each regular polygon is a power of 2. The correction module 803 is used to draw the target polygon in the graphic data file and correct the target polygon to obtain a mask pattern. The mask pattern is used to prepare a mask for silicon pillars. Photolithography is performed based on the mask to obtain an etching mask. Etching is performed based on the etching mask to obtain silicon pillars. The correction is used to compensate for some pattern deformations generated during photolithography and etching.

[0050] In some embodiments, the polygons in the polygon set include regular quadrilaterals, regular octagons, and regular hexagons; the lookup module 802 is specifically used for: If the diameter of the silicon pillar is smaller than the first preset diameter, the target polygon is a regular quadrilateral. If the diameter of the silicon pillar is greater than or equal to the first preset diameter and less than the second preset diameter, the target polygon is a regular octagon. If the diameter of the silicon pillar is greater than or equal to the second preset diameter, the target polygon is a regular hexagon.

[0051] In some embodiments, the first preset diameter is 150 nanometers and the second preset diameter is 250 nanometers.

[0052] In some embodiments, the correction module 803 is specifically used for: Obtain the lateral etch amount during the etching process; Based on the lateral erosion amount, the reference polygon is expanded to obtain the offset polygon. The reference polygon and the target polygon have the same shape and size. Using the offset polygon as a reference for the lithography result, the target polygon is concentrically scaled proportionally.

[0053] In some embodiments, the correction module 803 is specifically used for: The information of the target polygon is input into the photolithography simulation model to obtain the photolithography simulation pattern; Based on the graphic deviation between the lithographic simulation graphic and the offset polygon, the target polygon is concentrically scaled proportionally.

[0054] In some embodiments, the correction module 803 is specifically used for: If the lithographic simulation pattern is larger than the offset polygon, then the target polygon is concentrically and proportionally reduced. If the lithographic simulation pattern is smaller than the offset polygon, the target polygon is enlarged concentrically and proportionally.

[0055] In some embodiments, the information acquisition module 801 is specifically used for: Simulation of the propagation process of electromagnetic waves on metasurfaces; During the simulation, at least some of the silicon pillar design parameters of the metasurface were adjusted to obtain the correspondence between the silicon pillar design parameters and the electromagnetic wave parameters. If the electromagnetic wave parameters reach the control target, the silicon pillar design parameters corresponding to the electromagnetic wave parameters are used as the silicon pillar design information. If the electromagnetic wave parameters do not reach the control target, the silicon pillar design parameters are adjusted and the simulation continues.

[0056] Further functional descriptions of the above modules and units are the same as those in the corresponding embodiments described above, and will not be repeated here.

[0057] In this embodiment, the silicon pillar pattern correction device is presented in the form of a functional unit. Here, a unit refers to an ASIC (Application Specific Integrated Circuit) circuit, a processor and memory that execute one or more software or fixed programs, and / or other devices that can provide the above functions.

[0058] Please see Figure 9 , Figure 9 This application provides a schematic diagram of the structure of a computer device, as shown in the embodiment of the present application. Figure 9 As shown, the computer device includes one or more processors 10, memory 20, and interfaces for connecting the components, including high-speed interfaces and low-speed interfaces. The components communicate with each other via different buses and can be mounted on a common motherboard or otherwise installed as needed. The processors can process instructions executed within the computer device, including instructions stored in or on memory to display graphical information of a GUI on external input / output devices (such as display devices coupled to the interfaces). In some alternative implementations, multiple processors and / or multiple buses can be used with multiple memories and multiple memory modules, if desired. Similarly, multiple computer devices can be connected, each providing some of the necessary operations (e.g., as a server array, a group of blade servers, or a multiprocessor system). Figure 9 Take a processor 10 as an example.

[0059] Processor 10 may be a central processing unit, a network processor, or a combination thereof. Processor 10 may further include a hardware chip. The hardware chip may be an application-specific integrated circuit (ASIC), a programmable logic device (PLD), or a combination thereof. The programmable logic device may be a complex programmable logic device (CAMP), a field-programmable gate array (FPGA), a general-purpose array logic (GDA), or any combination thereof.

[0060] The memory 20 stores instructions executable by at least one processor 10 to cause the at least one processor 10 to perform the method shown in the above embodiments.

[0061] The memory 20 may include a program storage area and a data storage area. The program storage area may store the operating system and applications required for at least one function; the data storage area may store data created based on the use of the computer device. Furthermore, the memory 20 may include high-speed random access memory and may also include non-transitory memory, such as at least one disk storage device, flash memory device, or other non-transitory solid-state storage device. In some alternative embodiments, the memory 20 may optionally include memory remotely located relative to the processor 10, and these remote memories may be connected to the computer device via a network. Examples of such networks include, but are not limited to, the Internet, intranets, local area networks, mobile communication networks, and combinations thereof.

[0062] The memory 20 may include volatile memory, such as random access memory; the memory may also include non-volatile memory, such as flash memory, hard disk or solid-state drive; the memory 20 may also include a combination of the above types of memory.

[0063] This application provides a computer program product including computer instructions stored in a computer-readable storage medium. A processor of a computer device reads the computer instructions from the computer-readable storage medium and executes the computer instructions, causing the computer device to perform the method of any embodiment of this application.

[0064] The above description is merely an embodiment of this application and is not intended to limit the scope of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application.

Claims

1. A method for correcting silicon pillar patterns, characterized in that, The method includes: Obtain silicon pillar design information, including silicon pillar diameter; The target polygon that matches the diameter of the silicon pillar is found in the polygon set. The larger the diameter of the silicon pillar, the more sides the target polygon has. The polygons in the polygon set are regular polygons, and the number of sides of each regular polygon is a power of 2. The target polygon is drawn in the graphic data file and modified to obtain a mask pattern. The mask pattern is used to prepare a mask for silicon pillars. Photolithography is performed based on the mask to obtain an etching mask. Etching is performed based on the etching mask to obtain the silicon pillars. The modification is used to compensate for some pattern deformations generated during photolithography and etching.

2. The method according to claim 1, characterized in that, The polygon set includes regular quadrilaterals, regular octagons, and regular hexagons; the step of searching for a target polygon in the polygon set that matches the diameter of the silicon cylinder includes: If the diameter of the silicon pillar is smaller than the first preset diameter, the target polygon is a regular quadrilateral; If the diameter of the silicon pillar is greater than or equal to the first preset diameter and less than the second preset diameter, the target polygon is a regular octagon. If the diameter of the silicon pillar is greater than or equal to the second preset diameter, the target polygon is a regular hexagon.

3. The method according to claim 2, characterized in that, The first preset diameter is 150 nanometers, and the second preset diameter is 250 nanometers.

4. The method according to claim 1, characterized in that, The step of modifying the target polygon to obtain the mask pattern includes: Obtain the lateral etch amount during the etching process; According to the lateral erosion amount, the reference polygon is expanded to obtain the offset polygon, and the reference polygon has the same shape and size as the target polygon. Using the offset polygon as a reference for the lithography result, the target polygon is concentrically scaled proportionally.

5. The method according to claim 4, characterized in that, The step of using the offset polygon as a reference for the lithography result and performing concentric scaling of the target polygon includes: The information of the target polygon is input into the photolithography simulation model to obtain the photolithography simulation pattern; Based on the graphic deviation between the lithographic simulation pattern and the offset polygon, the target polygon is concentrically scaled proportionally.

6. The method according to claim 5, characterized in that, The step of concentrically scaling the target polygon according to the graphic deviation between the photolithographic simulation pattern and the offset polygon includes: If the lithographic simulation pattern is larger than the offset polygon, then the target polygon is concentrically and proportionally reduced. If the lithographic simulation pattern is smaller than the offset polygon, then the target polygon is enlarged concentrically and proportionally.

7. The method according to claim 1, characterized in that, The acquisition of silicon pillar design information includes: Simulation of the propagation process of electromagnetic waves on metasurfaces; During the simulation, at least some of the silicon pillar design parameters of the metasurface were adjusted to obtain the correspondence between the silicon pillar design parameters and the electromagnetic wave parameters. If the electromagnetic wave parameters reach the control target, the silicon pillar design parameters corresponding to the electromagnetic wave parameters are used as the silicon pillar design information. If the electromagnetic wave parameters do not reach the control target, the silicon pillar design parameters are adjusted and the simulation continues.

8. A silicon pillar pattern correction device, characterized in that, The device includes: The information acquisition module is used to acquire silicon pillar design information, including the silicon pillar diameter; The search module is used to search for a target polygon in a polygon set that matches the diameter of the silicon pillar, wherein the larger the diameter of the silicon pillar, the more sides the target polygon has, and the polygons in the polygon set are regular polygons, and the number of sides of each regular polygon is a power of 2. The correction module is used to draw the target polygon in the graphic data file and correct the target polygon to obtain a mask pattern. The mask pattern is used to prepare a mask for silicon pillars. Photolithography is performed based on the mask to obtain an etching mask. Etching is performed based on the etching mask to obtain the silicon pillars. The correction is used to compensate for some pattern deformations generated during photolithography and etching.

9. A computer device, characterized in that, include: A memory and a processor are communicatively connected, the memory storing computer instructions, and the processor executing the computer instructions to perform the silicon pillar patterning correction method according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer instructions for causing a computer to perform the silicon pillar patterning correction method according to any one of claims 1 to 7.

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