Semiconductor device with cross-point structure

Abstract

The present disclosure relates to a semiconductor device having a cross-point structure. A semiconductor device includes a local X-switch block, a first auxiliary X-switch block disposed in a first row aligned and overlapped with the local X-switch block in a first direction, a plurality of first cell regions disposed in the first row and located between the local X-switch block and the first auxiliary X-switch block, and a first X-line extending from the local X-switch block to pass through the plurality of first cell regions in the first direction. The local X-switch block includes a plurality of local X-switches aligned with each other in a second direction perpendicular to the first direction. The first auxiliary X-switch block includes a first auxiliary X-switch. The first X-line includes a first outer X-line electrically connected with the first auxiliary X-switch and a first local X-switch of the plurality of local X-switches, and a first inner X-line.

Description

Intersection of related applications

[0001] This patent document claims priority to Korean Patent Application No. 10-2025-0042519, filed on April 2, 2025, which is incorporated herein by reference in its entirety. Technical Field

[0002] Embodiments of this disclosure relate to a semiconductor device having a cross-point structure. Background Technology

[0003] In semiconductor devices with crossover structures, cells can be selectively enabled by receiving voltage or current when a local switch is turned on. As the integration density of semiconductor devices increases, the number of cells that should be enabled by a single local switch also increases. Summary of the Invention

[0004] Embodiments of this disclosure compensate for undercurrent in cells based on their location within the semiconductor device.

[0005] According to one embodiment of this disclosure, a semiconductor device includes: a local X-switch block; a first auxiliary X-switch block aligned with and overlapping the local X-switch block in a first direction, disposed in a first row; a plurality of first unit regions aligned with each other along the first direction, disposed in the first row and located between the local X-switch block and the first auxiliary X-switch block; and a first X-ray extending from the local X-switch block to pass through the plurality of first unit regions along the first direction. The local X-switch block includes a plurality of local X-switches aligned with each other along a second direction perpendicular to the first direction. The first auxiliary X-switch block includes a first auxiliary X-switch. The first X-ray includes: a first outer X-ray electrically connected to the first auxiliary X-switch and a first local X-switch among the plurality of local X-switches; and a first inner X-ray electrically connected to a second local X-switch among the plurality of local X-switches, but not electrically connected to the first auxiliary X-switch.

[0006] According to one embodiment of this disclosure, a semiconductor device includes: a local Y-switch block; a first auxiliary Y-switch block vertically aligned with and overlapping a left-side region of the local Y-switch block, arranged in a first column; a plurality of first unit regions vertically aligned with each other, arranged in the first column and located between the local Y-switch block and the first auxiliary Y-switch block; and a first Y-line extending from the local Y-switch block to pass vertically through the plurality of first unit regions. The local Y-switch block includes a plurality of local Y-switches horizontally aligned, the horizontal direction being perpendicular to the vertical direction. The first auxiliary Y-switch block includes a first auxiliary Y-switch. The first Y-line includes: a first outer Y-line electrically connected to the first auxiliary Y-switch and a first local Y-switch among the plurality of local Y-switches; and a first inner Y-line electrically connected to a second local Y-switch among the plurality of local Y-switches, but not electrically connected to the first auxiliary Y-switch.

[0007] According to one embodiment of this disclosure, a semiconductor device includes: a plurality of cell regions arranged in a matrix, wherein the matrix includes multiple rows and multiple columns; a first local switching block disposed in a first direction between the first cell regions among the plurality of cell regions, wherein the first local switching block has a line segment shape extending along a second direction; a second local switching block disposed in a second direction between the second cell regions among the plurality of cell regions, wherein the second local switching block has a line segment shape extending along the first direction; a first auxiliary switching block disposed in a first direction between the third cell regions among the plurality of cell regions, wherein the first auxiliary switching block is aligned with the first local switching block in the second direction; and a second auxiliary switching block disposed in a second direction between the fourth cell regions among the plurality of cell regions. The second auxiliary switching block is aligned with the second local switching block in the first direction. The first and second directions are perpendicular to each other. The first local switching block completely overlaps with the first cell region in the first direction. The second local switching block completely overlaps with the second cell region in the second direction. The first auxiliary switching block partially overlaps with the third cell region in the first direction. The second auxiliary switching block partially overlaps with the fourth cell region in the second direction.

[0008] These and other features and advantages of the embodiments of this disclosure will become apparent to those skilled in the art from the following detailed description taken in conjunction with the accompanying drawings. Attached Figure Description

[0009] Figure 1 This is a block diagram illustrating a semiconductor device according to an embodiment of the present disclosure.

[0010] Figure 2A and Figure 2B This is a block diagram schematically illustrating a cell array according to an embodiment of the present disclosure.

[0011] Figure 3A and Figure 3B This is a block diagram schematically illustrating a cell array of a semiconductor device according to an embodiment of the present disclosure.

[0012] Figure 4A and Figure 4B This is a block diagram schematically illustrating a cell array of a semiconductor device according to an embodiment of the present disclosure.

[0013] Figures 5A to 5C This is a block diagram schematically illustrating a unit region according to an embodiment of the present disclosure. Detailed Implementation

[0014] The embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. Specific structural or functional descriptions of particular embodiments are provided as examples to illustrate the technical concepts disclosed in this application. However, it should be understood that those skilled in the art can implement other various embodiments based on the technical concepts of this disclosure in various forms without departing from the scope of this disclosure. Therefore, the present invention is not limited to the described examples or embodiments.

[0015] The cross-shading lines in the figure indicate corresponding or similar areas between figures, rather than representing material related to these areas.

[0016] When one element is identified as "connected" or "coupled" to another element, the two elements can be directly connected or coupled, or connected or coupled through an intermediate element between the two elements. When two elements are identified as "directly connected" or "directly coupled," one element is directly connected or directly coupled to the other element, and there is no intermediate element between the two elements.

[0017] When one element is marked as "above", "on top", "below", or "under" another element, the two elements can be in direct contact with each other, or an intermediate element can be placed between the two elements.

[0018] Terms such as “vertical,” “horizontal,” “top,” “bottom,” “above,” “below,” “under,” “below,” “above,” “over,” “side,” “upper,” “topmost,” “lower,” “bottommost,” “front,” “back,” “left,” “right,” “column,” “row,” “hierarchy,” and other terms that suggest relative spatial relationships or orientations are used for ease of description or reference to the accompanying drawings and are not intended to be limiting. Within the scope of this disclosure, other spatial relationships or orientations not shown in the drawings or described in the specification are also possible.

[0019] Terms such as "first" and "second" are used to distinguish different components and do not imply the size, order, priority, number, or importance of the components. For example, in one instance, the first component may be referred to as the second component, while in another instance, the second component may be referred to as the first component.

[0020] In the specification, when an element included in an embodiment is described in the singular, the element can be interpreted as including multiple elements that perform the same or similar functions.

[0021] The concepts have been disclosed in conjunction with the foregoing examples and embodiments. Those skilled in the art will understand that various modifications, additions, and substitutions can be made without departing from the scope and technical concepts of this disclosure. The embodiments disclosed in this specification should be understood as exemplary rather than restrictive. Therefore, the scope of this disclosure is not limited to the foregoing description. All modifications within the meaning and equivalent scope of the claims are included within its scope.

[0022] Throughout the instruction manual, "selected" and "enabled" can mean that current is supplied or drawn. For example, "selected" and "enabled" can be interpreted as data being written or read.

[0023] Figure 1 This is a block diagram illustrating a semiconductor device 1000 according to an embodiment of the present disclosure. See also... Figure 1 The semiconductor device 1000 may include a cell array 100, an X control block 200, and a Y control block 300. The cell array 100 may include a plurality of cell regions 110 arranged in a matrix shape. The X control block 200 may be configured to be adjacent to and electrically connected to the cell array 100 in the X direction (X). For example, the X control block 200 may selectively enable cells within cell regions 110 of the cell array 100 based on an address signal. The X control block 200 may include address encoding circuitry, word line driving circuitry, and / or global X-switching circuitry. The Y control block 300 may be adjacent to and electrically connected to the cell array 100 in the Y direction (Y). The Y control block 300 may write data to or read data from selected cells in cell regions 110 of the cell array 100. The Y control block 300 may include input / output (input / output) buffer circuitry, global Y-switching circuitry, and / or sense amplifier circuitry.

[0024] Figure 2A and Figure 2B This is a block diagram schematically illustrating cell arrays 100A and 100B according to embodiments of the present disclosure. See also Figure 2A The cell array 100A may include cell regions 110, local X-switch blocks 210, local Y-switch blocks 310, auxiliary X-switch blocks 220, auxiliary Y-switch blocks 320, X-line 20, and Y-line 30. Cell regions 110 may be arranged in a matrix along a first direction X and a second direction Y. The first direction X and the second direction Y may be perpendicular to each other. For example, the first direction X may be a row direction, while the second direction Y may be a column direction. Therefore, cell regions 110 may be arranged in a matrix with multiple rows and columns. In another embodiment, the first direction X may be a column direction, while the second direction Y may be a row direction. To facilitate understanding of the technical concepts of this disclosure, cell regions 110 are shown to be spaced apart at regular intervals along the first direction X and the second direction Y, respectively.

[0025] Local X-switch blocks 210 can be disposed between a plurality of adjacent cell regions 110 in the first direction X. Each local X-switch block 210 can be adjacent to at least two cell regions 110 on its left and right sides in the first direction X, respectively. Each local X-switch block 210 can be adjacent to at least two cell regions 110 on both sides. For example, at least two cell regions 110 can be disposed adjacent to the left side of each local X-switch block 210, and at least two cell regions 110 can be disposed adjacent to the right side of each local X-switch block 210. The two cell regions 110 adjacent to one side of each local X-switch block 210 can be disposed adjacent to each other in the second direction Y. Each local X-switch block 210 can have an elongated line segment shape extending along the second direction Y and located between adjacent cell regions 110. In the cell array 100A, the local X-switch blocks 210 can be spaced apart by four cell regions 110 in the first direction X. That is, the four cell regions 110 can be arranged to be disposed between the local X-switch blocks 210 in the first direction X. In the cell array 100A, local X-switch blocks 210 can be arranged in a zigzag pattern along the first direction X and the second direction Y, respectively. The local X-switch blocks 210 can be arranged offset from at least two cell regions 110 along the first direction X and the second direction Y, respectively. The local X-switch blocks 210 can be aligned along the first diagonal direction D1 and the second diagonal direction D2, respectively. The first diagonal direction D1 and the second diagonal direction D2 can intersect each other. The first diagonal direction D1 and the second diagonal direction D2 can intersect diagonally with the first direction X and the second direction Y.

[0026] Local Y-switch blocks 310 can be disposed between a plurality of adjacent cell regions 110 in the second direction Y. Each local Y-switch block 310 can be adjacent to at least two cell regions 110 on the top and bottom sides of the second direction Y, respectively. The top and bottom sides of each local Y-switch block 310 can be adjacent to at least two cell regions 110, respectively. For example, at least two cell regions 110 can be disposed adjacent to the top side of each local Y-switch block 310, and at least two cell regions 110 can be disposed adjacent to the bottom side of each local Y-switch block 310. The two cell regions 110 adjacent to the top and bottom sides of each local Y-switch block 310 can be disposed adjacent to each other along the first direction X. Each local Y-switch block 310 can have an elongated line segment shape extending along the first direction X and located between a plurality of adjacent cell regions 110. In the cell array 100A, the local Y-switch blocks 310 can be spaced four cell regions 110 apart in the second direction Y. That is, four cell regions 110 can be arranged between the local Y-switch blocks 310 in the second direction Y. In the cell array 100A, the local Y-switch blocks 310 can be arranged in a zigzag pattern along the first direction X and the second direction Y, respectively. The local Y-switch blocks 310 can be arranged to be offset by at least two cell regions 110 in the first direction X and the second direction Y, respectively. The local Y-switch blocks 310 can be arranged to be aligned along the first diagonal direction D1 and the second diagonal direction D2, respectively.

[0027] The auxiliary X-switch block 220 may overlap and align with the local X-switch block 210 in the first direction X. The auxiliary X-switch block 220 may overlap and align with the local Y-switch block 310 in the second direction Y. The auxiliary X-switch block 220 may be configured to be spaced apart from the local X-switch block 210 by at least two unit regions 110 in the first direction X. For example, at least two unit regions 110 may be disposed between each auxiliary X-switch block 220 and each local X-switch block 210 in the first direction X. The auxiliary X-switch block 220 may have a line segment shape that partially overlaps or aligns with the unit regions 110 adjacent to each other in the second direction Y. For example, two auxiliary X-switch blocks 220 may be paired, and a pair of auxiliary X-switch blocks 220 may be configured to overlap or align with the ends of the local X-switch blocks 210 adjacent to each other in the first direction X. A single local Y-switch block 310 may be disposed between a pair of auxiliary X-switch blocks 220. The auxiliary X-switch block 220 can be arranged to be aligned along the first diagonal direction D1 and the second diagonal direction D2, respectively. The auxiliary X-switch block 220 can be configured to partially overlap with one of the cell regions 110 in the first direction X.

[0028] The auxiliary Y-switch block 320 may overlap and align with the local Y-switch block 310 in the second direction Y. The auxiliary Y-switch block 320 may also overlap and align with the local X-switch block 210 in the first direction X. The auxiliary Y-switch block 320 may be configured to be spaced at least two unit regions 110 apart from the local Y-switch block 310 in the second direction Y. For example, at least two unit regions 110 may be disposed between each auxiliary Y-switch block 320 and each local Y-switch block 310 in the second direction Y. Each auxiliary Y-switch block 320 may have a line segment shape that partially overlaps or aligns with the unit regions 110 adjacent to each other in the first direction X. For example, two auxiliary Y-switch blocks 320 may form a pair, and the pair of auxiliary Y-switch blocks 320 may be configured to overlap or align with the ends of the local Y-switch blocks 310 adjacent to each other in the second direction Y. A single local X-switch block 210 may be disposed between a pair of auxiliary Y-switch blocks 320. The auxiliary Y-switch block 320 can be arranged to be aligned along the first diagonal direction D1 and the second diagonal direction D2, respectively. The auxiliary Y-switch block 320 can be configured to partially overlap with one of the cell regions 110 in the second direction Y.

[0029] The local X-switch block 210 and the pair of auxiliary X-switch blocks 220 can be arranged to be aligned and alternately positioned in the first X direction and the second Y direction, respectively. The local Y-switch block 310 and the pair of auxiliary Y-switch blocks 320 can be configured to be aligned and alternately positioned in the first X direction and the second Y direction.

[0030] X-rays 20 may extend parallel to each other along a first direction X to pass through unit region 110, local X-switch block 210 and auxiliary X-switch block 220. Y-rays 30 may extend parallel to each other along a second direction Y to pass through unit region 110, local Y-switch block 310 and auxiliary Y-switch block 320.

[0031] Reference Figure 2B The unit array 100B may include a unit region 110, a local X-switch block 210, a local Y-switch block 310, an auxiliary X-switch block 220, an auxiliary Y-switch block 320, a dummy X-switch block 230, and a dummy Y-switch block 330. Figure 2A Compared to the unit array 100A, the unit array 100B may also include a dummy X switch block 230 and a dummy Y switch block 330.

[0032] A pair of dummy X-switch blocks 230 can be disposed between a pair of auxiliary X-switch blocks 220 in the second direction Y. The pair of dummy X-switch blocks 230 can overlap and align with a pair of adjacent auxiliary X-switch blocks 220 in the second direction Y. A single local Y-switch block 310 can be disposed between a pair of dummy X-switch blocks 230.

[0033] A pair of dummy Y switch blocks 330 can be configured to be aligned with each other in the first direction X and located between a pair of auxiliary Y switch blocks 320. The pair of dummy Y switch blocks 330 can overlap and align with a pair of adjacent auxiliary Y switch blocks 320 in the first direction X. A single local X switch block 210 can be disposed between a pair of dummy Y switch blocks 330.

[0034] X-rays 20 may extend parallel to each other along the first direction X to pass through unit region 110, local X-switch block 210, auxiliary X-switch block 220 and dummy X-switch block 230. Y-rays 30 may extend parallel to each other along the second direction Y to pass through unit region 110, local Y-switch block 310, auxiliary Y-switch block 320 and dummy Y-switch block 330.

[0035] Not all cell regions 110 are adjacent to (e.g., overlapped, co-located) the local X switch block 210 and the local Y switch block 310. For example, a cell region 110 adjacent to the local X switch block 210 in the first direction X may be spaced apart from the local Y switch block 310 by at least one cell region 110 in the second direction Y. Furthermore, a cell region 110 adjacent to the local Y switch block 310 in the second direction Y may be spaced apart from the local X switch block 210 by at least one cell region 110 in the first direction X.

[0036] According to an embodiment, the cell region 110 may not be adjacent to both the local X switch block 210 and the local Y switch block 310. For example, each cell region 110 may be adjacent to only one of the local X switch block 210 and the local Y switch block 310. Therefore, the near-cell effect caused by overcurrent that may occur when the cell region 110 is adjacent to both the local X switch block 210 and the local Y switch block 310 can be prevented or mitigated.

[0037] According to an embodiment, the cell region 110 can be arranged side-by-side and not far from the local X switch block 210 and the local Y switch block 310 (e.g., based on the proximity effect and / or the relative distance between the switch blocks). The cell region 110, which is located far from both the local X switch block 210 and the local Y switch block 310, can be arranged adjacent to one of the auxiliary X switch blocks 220 or one of the auxiliary Y switch blocks 320. Therefore, the far-cell effect caused by excessively low current that may occur when the cell region 110 is located far from both the local X switch block 210 and the local Y switch block 310 in a common location can be prevented or mitigated.

[0038] Figure 3A and Figure 3B This is a block diagram schematically illustrating a cell array 100A of a semiconductor device according to an embodiment of the present disclosure. Figure 3A yes Figure 2A A magnified view of region A1. Figure 3B yes Figure 2A A magnified view of region A2. Figure 3A The arrangement and electrical connections of X-ray beams 20: 21a, 21b, 22a and 22b, and auxiliary X-ray switch blocks 220: 221a, 221b, 222a and 222b are shown. Figure 3B The arrangement and electrical connections of Y lines 30: 31a, 31b, 32a and 32b and auxiliary Y switch blocks 320: 321a, 321b, 322a and 322b are shown. Figure 3A In the text, Y-lines 30:31a, 31b, 32a, and 32b are omitted. Figure 3B X-rays 20:21a,21b,22a,22b are omitted. Figure 3A and Figure 3B Different aspects of the same embodiment are shown.

[0039] Reference Figure 3A The unit array 100A may include unit regions 110TLa, 110TLb, 110TRa, 110TRb, 110BLa, 110BLb, 110BRa and 110BRb, local X-switch block 210, local Y-switch blocks 310a and 310b, auxiliary X-switch blocks 221a, 221b, 222a and 222b, auxiliary Y-switch blocks 320a and 320b, and X-rays 21a, 21b, 22a and 22b.

[0040] The unit regions 110TLa, 110TLb, 110TRa, 110TRb, 110BLa, 110BLb, 110BRa, and 110BRb may include: upper unit regions 110TLa, 110TLb, 110TRa, and 110TRb, which are arranged side-by-side and aligned with each other along a first direction X in a first row R1 (upper row); and lower unit regions 110BLa, 110BLb, 110BRa, and 110BRb, which are arranged side-by-side and aligned with each other in a second row R2 (lower row). Local Y-switch blocks 310a and 310b and auxiliary Y-switch blocks 320a and 320b may be disposed along a second direction between the upper unit regions 110TLa, 110TLb, 110TRa, and 110TRb and the lower unit regions 110BLa, 110BLb, 110BRa, and 110BRb. For example, the upper unit regions 110TLa, 110TLb, 110TRa, and 110TRb arranged in the first row R1 can be located in the upper region of the local Y switch blocks 310a and 310b and the auxiliary Y switch blocks 320a and 320b, and the lower unit regions 110BLa, 110BLb, 110BRa, and 110BRb arranged in the second row R2 can be located in the lower region of the local Y switch blocks 310a and 310b and the auxiliary Y switch blocks 320a and 320b. The upper unit regions 110TLa, 110TLb, 110TRa, and 110TRb can include: a first upper outer inner unit region 110TLa and 110TLb located on the left side of the local X switch block 210; and a second upper inner inner unit region 110TRa and 110TRb located on the right side of the local X switch block 210. The lower unit regions 110BLa, 110BLb, 110BRa and 110BRb may include: a first lower outer inner unit region 110BLa and 110BLb disposed on the left side of the local X switch block 210; and a second lower inner inner unit region 110BRa and 110BRb disposed on the right side of the local X switch block 210.

[0041] A local X-switch block 210 may be disposed along a first direction X between a first upper inner cell region 110TLb and a second upper inner cell region 110TRa in a first row R1, and between a first lower inner cell region 110BLb and a second lower inner cell region 110BRa in a second row R2. The local X-switch block 210 may completely cover cell regions 110TLa, 110TLb, 110TRa, 110TRb, 110BLb, 110BRa, and 110BRb in the first direction X. The first row R1 may pass through the upper region of the local X-switch block 210 in the first direction X, and the second row R2 may pass through the lower region of the local X-switch block 210 in the first direction X. The local X-switch block 210 may have a line segment shape extending along a second direction Y. The local X-switch block 210 may include a plurality of local X switches XS aligned and disposed along the second direction Y. In one embodiment, the plurality of local X switches XS may include local X transistors.

[0042] Auxiliary X-switch blocks 221a, 221b, 222a, and 222b can be disposed in the outer regions at the left and right ends of the unit regions 110TLa, 110TLb, 110TRa, 110TRb, 110BLa, 110BLb, 110BRa, and 110BRb controlled by the local X-switch block 210 in the first direction X. For example, auxiliary X-switch blocks 221a, 221b, 222a, and 222b can be disposed in the outer regions of the outer unit regions 110TLa, 110TRb, 110BLa, and 110BRb that are farthest from the local X-switch block 210 in the first direction X, respectively. The auxiliary X-switch blocks 221a, 221b, 222a, and 222b may include: a first upper auxiliary X-switch block 221a, which is disposed in the upper region of the left outer region of the first upper outer unit region 110TLa; a first lower auxiliary X-switch block 221b, which is disposed in the lower region of the left outer region of the first lower outer unit region 110BLa; a second upper auxiliary X-switch block 222a, which is disposed in the upper region of the right outer region of the second upper outer unit region 110TRb; and a second lower auxiliary X-switch block 222b, which is disposed in the lower region of the right outer region of the second lower outer unit region 110BRb. The first upper auxiliary X-switch block 221a and the second upper auxiliary X-switch block 222a may be configured to partially overlap with the upper unit regions 110TLa, 110TLb, 110TRa, and 110TRb in the first direction X. The first lower auxiliary X-switch block 221b and the second lower auxiliary X-switch block 222b may partially overlap with the lower unit regions 110BLa, 110BLb, 110BRa, and 110BRb in the first direction X. Each of the plurality of auxiliary X-switch blocks 221a, 221b, 222a, and 222b may include a plurality of auxiliary X-switch AXS aligned and disposed along the second direction Y. In one embodiment, the plurality of auxiliary X-switch AXS may include auxiliary X-transistors. The area occupied by each of the auxiliary X-switch blocks 221a, 221b, 222a, and 222b may be smaller than the area occupied by the local X-switch block 210. Therefore, the number of auxiliary X-switch AXS arranged in each of the auxiliary X-switch blocks 221a, 221b, 222a, and 222b may be less than the number of local X-switch XS arranged in the local X-switch block 210.

[0043] Local Y-switch blocks 310a and 310b and auxiliary Y-switch blocks 320a and 320b can be disposed between the upper unit regions 110TLa, 110TLb, 110TRa and 110TRb arranged in the first row R1 and the lower unit regions 110BLa, 110BLb, 110BRa and 110BRb arranged in the second row R2. For example, each of the local Y-switch blocks 310a and 310b can be disposed away from the local X-switch block 210 (e.g., separated by more than the area (or length, lateral distance) occupied by the unit regions) between the first upper outer unit region 110TLa and the second upper outer unit region 110TRb and the first lower unit region 110BLa and the second lower unit region 110BRb located at the left and right ends. The local Y-switch blocks 310a and 310b may include: a first local Y-switch block 310a, disposed between a first upper outer unit region 110TLa and a first lower outer unit region 110BLa; and a second local Y-switch block 310b, disposed between a second upper outer unit region 110TRb and a second lower outer unit region 110BRb. In the second direction Y, the first local Y-switch block 310a may be configured to completely overlap with the first upper outer unit region 110TLa and the first lower outer unit region 110BLa, and the second local Y-switch block 310b may be configured to completely overlap with the second upper outer unit region 110TRb and the second lower outer unit region 110BRb. At the left and right ends of the figure, the first local Y-switch block 310a and the second local Y-switch block 310b, which are adjacent to each other in the first direction X, may be integrated.

[0044] Auxiliary Y-switch blocks 320a and 320b can be respectively disposed between the first upper inner unit region 110TLb and the second upper inner unit region 110TRa and the first lower inner unit region 110BLb and the second lower inner unit region 110BRa, so as to be close to the local X-switch block 210 in the middle region (e.g., separated by an area (or length, lateral distance) smaller than that occupied by the unit region). Auxiliary Y-switch blocks 320a and 320b may include: a first auxiliary Y-switch block 320a disposed between the first upper inner unit region 110TLb and the first lower inner unit region 110BLb; and a second auxiliary Y-switch block 320b disposed between the second upper inner unit region 110TRa and the second lower inner unit region 110BRa. The first auxiliary Y switch block 320a can be configured to partially overlap with the first upper inner unit region 110TLb and the first lower inner unit region 110BLb, and the second auxiliary Y switch block 320b can be configured to partially overlap with the second upper inner unit region 110TRa and the second lower inner unit region 110BRa.

[0045] X-rays 21a, 21b, 22a, and 22b can extend from the local X-switching block 210 in the central region along the first direction X, and can pass through multiple unit regions 110TLa, 110TLb, 110TRa, 110TRb, 110BLa, 110BLb, 110BRa, and 110BRb, respectively. In the figure, X-rays 21a, 21b, 22a, and 22b can pass through four unit regions 110TLa, 110TLb, 110TRa, 110TRb, 110BLa, 110BLb, 110BRa, and 110BRb, respectively, in two directions. In other words, X-rays 21a, 21b, 22a, and 22b can all pass through two unit regions 110TLa, 110TLb, 110BLa, and 110BLb in one direction (leftward) and through two unit regions 110TRa, 110TRb, 110BRa, and 110BRb in another direction (rightward). X-rays 21a, 21b, 22a, and 22b can be electrically connected to the local X-switches in the local X-switch block 210 of the central region and to the units in unit regions 110TLa, 110TLb, 110TRa, 110TRb, 110BLa, 110BLb, 110BRa, and 110BRb, respectively. The local X-switches can be aligned in the second direction Y within the local X-switch block 210. In other words, X-rays 21a, 21b, 22a, and 22b can supply voltage or current in two directions to the cells in each of the four cell regions 110TLa, 110TLb, 110TRa, 110TRb, 110BLa, 110BLb, 110BRa, and 110BRb through the local X-switch in the local X-switch block 210 located in the central region.

[0046] X-rays 21a, 21b, 22a, and 22b may include outer X-rays 21a and 21b and inner X-rays 22a and 22b extending parallel to each other along a first direction X. The outer and inner X-rays 21a, 21b, 22a, and 22b may include an upper outer X-ray 21a, an upper inner X-ray 22a, a lower outer X-ray 21b, and a lower inner X-ray 22b. Local Y-switch blocks 310a and 310b and auxiliary Y-switch blocks 320a and 320b may be disposed between the upper outer X-ray 21a and upper inner X-ray 22a and the lower outer X-ray 21b and lower inner X-ray 22b. The upper outer X-ray 21a and the upper inner X-ray 22a can be set in the upper region of the local Y switch blocks 310a and 310b and the auxiliary Y switch blocks 320a and 320b, so as to pass through the upper unit regions 110TLa, 110TLb, 110TRa and 110TRb of the first row R1 along the first direction X. The lower outer X-ray 21b and the lower inner X-ray 22b can be set in the lower region of the local Y switch blocks 310a and 310b and the auxiliary Y switch blocks 320a and 320b, so as to pass through the lower unit regions 110BLa, 110BLb, 110BRa and 110BRb of the second row R2 along the first direction X.

[0047] The outer X-rays 21a and 21b can be set at a distance that is relatively far from the local Y-switch blocks 310a and 310b and the auxiliary Y-switch blocks 320a and 320b in the second direction Y. The upper outer X-ray 21a can be set near the upper end of the local X-switch block 210 in the first row R1 and the upper end of the upper unit regions 110TLa, 110TLb, 110TRa and 110TRb, and the lower outer X-ray 21b can be set near the lower end of the local X-switch block 210 in the second row R2 and the lower end of the lower unit regions 110BLa, 110BLb, 110BRa and 110BRb. Therefore, the upper outer X-ray 21a can pass through the upper region of the local X-switch block 210 in the first row R1 and the upper region of the upper unit regions 110TLa, 110TLb, 110TRa, and 110TRb, and the lower outer X-ray 21b can pass through the lower region of the local X-switch block 210 in the second row R2 and the lower region of the lower unit regions 110BLa, 110BLb, 110BRa, and 110BRb. Each of the outer X-rays 21a and 21b can electrically connect the local X-switch in the local X-switch block 210 arranged along the first direction X to the auxiliary X-switch in the auxiliary X-switch blocks 221a, 221b, 222a, and 222b arranged on the same horizontal line. External X-rays 21a and 21b can be electrically connected to units in unit regions 110TLa, 110TLb, 110TRa, 110TRb, 110BLa, 110BLb, 110BRa, and 110BRb located on the same horizontal line, respectively. That is, a local X-switch, a unit, an auxiliary X-switch, and a corresponding one of external X-rays 21a and 21b located on the same horizontal line can be electrically connected to each other.

[0048] The inner X-rays 22a and 22b can be respectively positioned in the second direction Y, adjacent to or not far from the local Y-switch blocks 310a and 310b and the auxiliary Y-switch blocks 320a and 320b. The upper inner X-ray 22a can be positioned in the upper-middle region of the local X-switch block 210 in the first row R1 and at the lower end of the upper unit regions 110TLa, 110TLb, 110TRa and 110TRb. The lower inner X-ray 22b can be positioned in the lower-middle region of the local X-switch block 210 in the second row R2 and at the upper end of the lower unit regions 110BLa, 110BLb, 110BRa and 110BRb. Therefore, the upper inner X-ray 22a can pass through the upper middle region of the local X-switch block 210 in the first row R1 and the lower region of the upper unit regions 110TLa, 110TLb, 110TRa, and 110TRb, and the lower inner X-ray 22b can pass through the lower middle region of the local X-switch block 210 in the second row R2 and the upper region of the lower unit regions 110BLa, 110BLb, 110BRa, and 110BRb. The inner X-rays 22a and 22b can be electrically connected along the first direction X to the local X-switches in the local X-switch block 210 and to the units arranged on the same horizontal line in the unit regions 110TLa, 110TLb, 110TRa, 110TRb, 110BLa, 110BLb, 110BRa, and 110BRb. That is, corresponding local X-switches, units, and inner X-rays 22a and 22b arranged on the same horizontal line can be electrically connected to each other.

[0049] The upper outer X-ray 21a and the lower outer X-ray 21b can be electrically connected to the local X-switch in the local X-switch block 210 and the auxiliary X-switch in the auxiliary X-switch blocks 221a, 221b, 222a, and 222b, respectively. The auxiliary X-switch in the auxiliary X-switch blocks 221a, 221b, 222a, and 222b can be aligned in the second direction Y. The local X-switch in the local X-switch block 210 connected to each of the upper outer X-ray 21a and each of the lower outer X-ray 21b, as well as the auxiliary X-switch in each of the auxiliary X-switch blocks 221a, 221b, 222a, and 222b, can all be activated simultaneously.

[0050] Therefore, by simultaneously supplying voltage or current from the central local X-switch block 210 and the auxiliary X-switch blocks 221a, 221b, 222a and 222b to the cells in the cell regions 110TLa, 110TLb, 110TRa, 110TRb, 110BLa, 110BLb, 110BRa and 110BRb, each of the upper external X-ray 21a and the lower external X-ray 21b can be selectively enabled.

[0051] The inner X-rays 22a and 22b may not be electrically connected to the auxiliary X-switch blocks 221a, 221b, 222a and 222b. That is, the inner X-rays 22a and 22b can be selectively enabled by supplying voltage or current from the local X-switch block 210 located in the central region to the cells in the cell regions 110TLa, 110TLb, 110TRa, 110TRb, 110BLa, 110BLb, 110BRa and 110BRb.

[0052] Reference Figure 3B The cell array 100B of the semiconductor device may include cell regions 110LTa, 110LTb, 110RTa, 110RTb, 110LBa, 110LBb, 110RBa and 110RBb, local X switch blocks 210a and 210b, local Y switch block 310, auxiliary X switch blocks 220a and 220b, auxiliary Y switch blocks 321a, 321b, 322a and 322b, and Y lines 31a, 31b, 32a and 32b.

[0053] The cell regions 110LTa, 110LTb, 110LBa, 110LBb, 110RTa, 110RTb, 110RBa, and 110RBb may include the left cell regions 110LTa, 110RTb, 110LBa, and 110LBb disposed on the first column C1 (left column) in the second direction Y, and the right cell regions 110RTa, 110RTb, 110RBa, and 110RBb disposed on the second column C2 (right column). Local X-switch blocks 210a and 210b and auxiliary X-switch blocks 220a and 220b may be disposed between the left cell regions 110LTa, 110LTb, 110LBa, and 110LBb and the right cell regions 110RTa, 110RTb, 110RBa, and 110RBb. For example, the left cell regions 110LTa, 110LTb, 110LBa, and 110LBb located in the first column C1 can be located in the left region of the local X switch blocks 210a and 210b and the auxiliary X switch blocks 220a and 220b, and the right cell regions 110RTa, 110RTb, 110RBa, and 110RBb located in the second column C2 can be located in the right region of the local X switch blocks 210a and 210b and the auxiliary X switch blocks 220a and 220b. The left cell regions 110LTa, 110LTb, 110LBa, and 110LBb can include: a first upper-left cell region 110LTa and a first lower-left cell region 110LTb located in the upper region of the local Y switch block 310; and a second upper-left cell region 110LBa and a second lower-left cell region 110LBb located in the lower region of the local Y switch block 310. The right unit regions 110RTa, 110RTb, 110RBa and 110RBb may include: a first upper right unit region 110RTa and a first lower right unit region 110RTb disposed in the upper region of the local Y switch block 310; and a second upper right unit region 110RBa and a second lower right unit region 110RBb disposed in the lower region of the local Y switch block 310.

[0054] Local X-switch blocks 210a and 210b and auxiliary X-switch blocks 220a and 220b can be disposed between the left unit regions 110LTa, 110LTb, 110LRa and 110LRb arranged in the first column C1 and the right unit regions 110RTa, 110RTb, 110RBa and 110RBb arranged in the second column C2. Local X-switch blocks 210a and 210b can include a first local X-switch block 210a and a second local X-switch block 210b. The first local X-switch block 210a can be disposed between the first upper left unit region 110LTa and the first upper right unit region 110RTa, which are disposed at the upper end away from the local Y-switch block 310, and the second local X-switch block 210b can be disposed between the second lower left unit region 110LBb and the second lower right unit region 110RBb, which are disposed at the lower end away from the local Y-switch block 310.

[0055] The auxiliary X-switch blocks 220a and 220b may include: a first auxiliary X-switch block 220a, which is disposed between the first lower left unit region 110LTb and the first lower right unit region 110RTb, close to the local Y-switch block 310; and a second auxiliary X-switch block 220b, which is disposed between the second upper left unit region 110LBa and the second upper unit region 110RBa, close to the local Y-switch block 310. In the first direction X, the first auxiliary X-switch block 220a may partially overlap the first lower left unit region 110LTb and the first lower right unit region 110RTb, and the second auxiliary X-switch block 220b may partially overlap the second upper left unit region 110LBa and the second upper right unit region 110RBa.

[0056] In the second direction Y, a local Y-switch block 310 may be disposed between the first and second left cell regions 110LTa, 110LTb, 110LBa, and 110LBb disposed on the first column C1, and between the first and second right cell regions 110RTa, 110RTb, 110RBa, and 110RBb disposed on the second column C2. The first column C1 may pass through the left region of the local Y-switch block 310 along the second direction Y, and the second column C2 may pass through the right region of the local Y-switch block 310 along the second direction Y. The local Y-switch block 310 may be in the shape of a line segment extending along the first direction X. The local Y-switch block 310 may be configured to completely overlap with the cell regions 110LTa, 110LTb, 110LBa, 110LBb, 110RTa, 110RTb, 110RBa, and 110RBb in the second direction Y. The local Y-switch block 310 may include a plurality of local Y-switches YS aligned and disposed along the first direction X. In one embodiment, the plurality of local Y switches YS may include local Y transistors.

[0057] Auxiliary Y-switch blocks 321a, 321b, 322a, and 322b can be respectively disposed in the outer regions of the upper and lower ends of the unit regions 110LTa, 110LTb, 110LBa, 110LBb, 110RTa, 110RTb, 110RBa, and 110RBb in the second direction Y, which are controlled by the local Y-switch block 310. For example, auxiliary Y-switch blocks 321a, 321b, 322a, and 322b can be respectively disposed in the upper / lower outer regions of the upper / lower unit regions 110LTa, 110LBb, 110RTa, and 110RBb located at the farthest point in the second direction Y. The auxiliary Y-switch blocks 321a, 321b, 322a, and 322b may include: a first left auxiliary Y-switch block 321a, which is disposed in the left side region of the upper outer region of the first upper left unit region 110LTa; a first right auxiliary Y-switch block 321b, which is disposed in the right side region of the upper outer region of the first upper right unit region 110RTa; a second left auxiliary Y-switch block 322a, which is disposed in the left side region of the lower outer region of the second lower left unit region 110LBb; and a second right auxiliary Y-switch block 322b, which is disposed in the right side region of the lower outer region of the second lower right unit region 110RBb. The first left auxiliary Y-switch block 321a and the second left auxiliary Y-switch block 322a may be configured to partially overlap with the first upper left unit region 110LTa and the first lower left unit region 110LTb, as well as the second upper left unit region 110LTa and the second lower left unit region 110LBb in the second direction Y. The first right auxiliary Y switch block 321b and the second right auxiliary Y switch block 322b can be configured to partially overlap with the first upper right unit region 110RTa and the first lower right unit region 110RTb, as well as the second upper right unit region 110RBa and the second lower right unit region 110RBb, in the second direction Y. Each of the auxiliary Y switch blocks 321a, 321b, 322a, and 322b may include a plurality of auxiliary Y switches AYS aligned along the first direction X. In one embodiment, each auxiliary Y switch AYS may include an auxiliary Y transistor. The area occupied by each of the auxiliary Y switch blocks 321a, 321b, 322a, and 322b may be smaller than the area occupied by the local Y switch block 310. Therefore, the number of auxiliary Y switches AYS disposed in each of the auxiliary Y switch blocks 321a, 321b, 322a, and 322b may be less than the number of local Y switches YS disposed in the local Y switch block 310.

[0058] Y-lines 31a, 31b, 32a, and 32b can extend from the local Y-switch block 310 in the central region along the second direction Y, and can respectively pass through multiple unit regions 110LTa, 110LTb, 110LBa, 110LBb, 110RTa, 110RTb, 110RBa, and 110RBb. For example... Figure 3BAs shown, Y-lines 31a, 31b, 32a, and 32b can pass through four unit regions 110LTa, 110LTb, 110LBa, 110LBb, 110RTa, 110RTb, 110RBa, and 110RBb along the second direction Y, respectively. That is, Y-lines 31a, 31b, 32a, and 32b can each pass through two unit regions 110LTa, 110LTb, 110RTa, and 110RTb along one direction (upward direction), and pass through two unit regions 110LBa, 110LBb, 110RBa, and 110RBb along another direction (downward direction). Y-lines 31a, 31b, 32a, and 32b can be electrically connected to the local Y-switches in the local Y-switch block 310 and to the cells in the unit regions 110LTa, 110LTb, 110LBa, 110LBb, 110RTa, 110RTb, 110RBa, and 110RBb, respectively. The local Y-switches can be aligned along the first direction X in the local Y-switch block 310. That is, Y-lines 31a, 31b, 32a, and 32b can supply voltage or current in the vertical direction to the cells in each of the four unit regions 110LTa, 110LTb, 110LBa, 110LBb, 110RTa, 110RTb, 110RBa, and 110RBb through the local Y-switches in the local Y-switch block 310.

[0059] Y-lines 31a, 31b, 32a, and 32b may include outer Y-lines 31a and 31b and inner Y-lines 32a and 32b extending parallel to each other along the second Y-direction. The outer and inner Y-lines 31a, 31b, 32a, and 32b may include a left outer Y-line 31a, a left inner Y-line 32a, a right outer Y-line 31b, and a right inner Y-line 32b. Local X-switch blocks 210a and 210b and auxiliary X-switch blocks 220a and 220b may be disposed between the left outer Y-line 31a and the left inner Y-line 32a and the right outer Y-line 31b and the right inner Y-line 32b. The left outer Y-line 31a and the left inner Y-line 32a can be set in the left region of the local X-switch blocks 210a and 210b and the auxiliary X-switch blocks 220a and 220b, so as to pass through the left unit regions 110LTa, 110LTb, 110LBa and 110LBb on the first column C1 in the second Y direction, and the right outer Y-line 31b and the right inner Y-line 32b can be set in the right region of the local X-switch blocks 210a and 210b and the auxiliary X-switch blocks 220a and 220b, so as to pass through the right unit regions 110RTa, 110RTb, 110RBa and 110RBb on the second column C2 in the second Y direction.

[0060] Outer Y-lines 31a and 31b can be positioned away from local X-switch blocks 210a and 210b and auxiliary X-switch blocks 220a and 220b in the first direction X (e.g., separated by more than half the area (or length, lateral distance) occupied by the cell regions). The left outer Y-line 31a can be positioned near the left end of the local Y-switch block 310 on the first column C1 and the left end of the left cell regions 110LTa, 110LTb, 110LBa and 110LBb, and the right outer Y-line 31b can be positioned near the right end of the local Y-switch block 310 on the second column C2 and the right end of the right cell regions 110RTa, 110RTb, 110RBa and 110RBb. Therefore, the left outer Y line 31a can pass through the left side region of the local Y switch block 310 on the first column C1 and the left side region of the left unit regions 110LTa, 110LTb, 110LBa and 110LBb, and the right outer Y line 31b can pass through the right side region of the local Y switch block 310 on the second column C2 and the right side region of the right unit regions 110RTa, 110RTb, 110RTa and 110RTb. The outer Y lines 31a and 31b can respectively connect the local Y switches in the local Y switch block 310 to the auxiliary Y switches in the auxiliary Y switch blocks 321a, 321b, 322a and 322b arranged on the same vertical line in the second direction Y. External Y-lines 31a and 31b can be electrically connected to the units in the unit regions 110LTa, 110LTb, 110LBa, 110LBb, 110RTa, 110RTb, 110RBa, and 110RBb, respectively, which are located on the same vertical line. In other words, the corresponding local Y-switch, unit, auxiliary Y-switch, and external Y-lines 31a and 31b located on the same vertical line can be electrically connected to each other.

[0061] Inner Y-lines 32a and 32b can be respectively set in the first X direction close to or not far from local X-switch blocks 210a and 210b and auxiliary X-switch blocks 220a and 220b (e.g., separated by less than half the area (or length, lateral distance) occupied by the cell regions). Left inner X-line 32a can be set close to the left middle region of local Y-switch block 310 on the first column C1 and the right side region of left cell regions 110LTa, 110LTb, 110LBa and 110LBb, and right inner Y-line 32b can be set close to the right middle region of local Y-switch block 310 on the second column C2 and the left side region of right cell regions 110RTa, 110RTb, 110RBa and 110RBb. Therefore, the left inner Y-line 32a can pass through the left-middle region of the local Y-switch block 310 on the first column C1 and the right-side region of the left unit regions 110LTa, 110LTb, 110LBa, and 110LBb, and the right inner Y-line 32b can pass through the right-middle region of the local Y-switch block 310 on the second column C2 and the left-side region of the right unit regions 110RTa, 110RTb, 110RBa, and 110RBb. The inner Y-lines 32a and 32b can be electrically connected in the second direction Y to the local Y switches in the local Y-switch block 310 and the units in the unit regions 110LTa, 110LTb, 110LBa, 110LBb, 110RTa, 110RTb, 110RBa, and 110RBb, respectively, located on the same vertical line as the local Y-switch block 310. In other words, corresponding local Y switches, units, and inner Y-lines 32a and 32b located on the same vertical line can be electrically connected to each other.

[0062] The left outer Y-line 31a and the right outer Y-line 31b can be electrically connected to the local Y-switches in the local Y-switch block 310 and the auxiliary Y-switches in the auxiliary Y-switch blocks 321a, 321b, 322a, and 322b, respectively. The auxiliary Y-switches in the auxiliary Y-switch blocks 321a, 321b, 322a, and 322b can be aligned along the first direction X. Each local Y-switch in the local Y-switch block 310 electrically connected to each left outer Y-line 31a and each right outer Y-line 31b, and each auxiliary Y-switch in each of the auxiliary Y-switch blocks 321a, 321b, 322a, and 322b, can be activated simultaneously. Therefore, each of the left outer Y line 31a and the right outer Y line 31b can be selectively enabled by simultaneously supplying voltage or current to the cells in the cell regions 110LTa, 110LTb, 110LBa, 110LBb, 110RTa, 110RTb, 110RBa and 110RBb from the local Y switch block 310 and the auxiliary Y switch blocks 321a, 321b, 322a and 322b.

[0063] The inner Y lines 32a and 32b may not be electrically connected to the auxiliary Y switch blocks 321a, 321b, 322a and 322b. That is, the inner Y lines 32a and 32b can be selectively enabled by supplying voltage or current from the local Y switch block 310 to the cells in the cell regions 110LTa, 110LTb, 110LBa, 110LBb, 110RTa, 110RTb, 110RBa and 110RBb.

[0064] Units located away from (or further away from) local X-switch blocks 210a and 210b and / or local Y-switch blocks 310a and 310b can be supplied with lower voltage or current than other units. According to this embodiment, units located away from local X-switch blocks 210, 210a and 210b and / or local Y-switch blocks 310, 310a and 310b can receive additional voltage or current from the auxiliary Y switches in auxiliary X-switch blocks 220, 220a, 220b, 221a, 221b, 222a and 222b, and auxiliary Y-switch blocks 320, 320a, 320b, 321b, 321b, 322a and 322b. Therefore, units located away from local X-switch blocks 210, 210a and 210b and / or local Y-switch blocks 310, 310a and 310b can exhibit the same good operating characteristics as other units.

[0065] Figure 4A and Figure 4B This is a block diagram schematically illustrating a cell array 100B of a semiconductor device according to an embodiment of the present disclosure. Figure 4A It is shown Figure 2B A magnified view of region B1. Figure 4B It is shown Figure 2B A magnified view of region B2. Figure 4A In the text, Y-lines 30: 31a, 31b, 32a, and 32b are omitted; Figure 4B In the text, X-rays 20:21a,21b,22a and 22b are omitted. Figure 4A and Figure 4B The same embodiment is shown.

[0066] Reference Figure 4AThe unit array 100B may include unit regions 110TLa, 110TLb, 110TRa, 110TRb, 110BLa, 110BLb, 110BRa and 110BRb, local X-switching block 210, local Y-switching blocks 310a and 310b, auxiliary X-switching blocks 221a, 221b, 222a and 222b, auxiliary Y-switching blocks 320a and 320b, X-rays 21a, 21b, 22a and 22b, and dummy X-switching blocks 231a, 231b, 232a and 232b. The dummy X switch blocks 231a, 231b, 232a, and 232b can be disposed in the outer regions of the left and right ends of the unit regions 110TLa, 110TLb, 110TRa, 110TRb, 110BLa, 110LBb, 110BRa, and 110BRb in the first direction X. The dummy X switch blocks 231a, 231b, 232a, and 232b can include: a first upper dummy X switch block 231a, disposed in the left outer region of the first upper outer unit region 110TLa in the first row R1; a first lower dummy X switch block 231b, disposed in the left outer region of the first lower outer unit region 110BLa in the second row R2; a second upper dummy X switch block 232a, disposed in the right outer region of the second upper outer unit region 110TRb in the first row R1; and a second lower dummy X switch block 232b, disposed in the right outer region of the second lower outer unit region 110BRb in the second row R2. Each of the dummy X-switch blocks 231a, 231b, 232a, and 232b may include a plurality of dummy X-switch DXS aligned and disposed along a second direction Y. In one embodiment, the dummy X-switch DXS may include a dummy X-transistor. In one embodiment, the dummy X-switch DXS may be electrically connected to inner X-lines 22a and 22b. The dummy X-switch DXS may be electrically floated. In another embodiment, the dummy X-switch DXS may not be electrically connected to inner X-lines 22a and 22b. An auxiliary X-switch AXS may provide voltage or current to outer X-lines 21a and 21b. The dummy X-switch DXS may not provide voltage or current to inner X-lines 22a and 22b.

[0067] Reference Figure 4BThe cell array 100B may include cell regions 110LTa, 110LTb, 110LBa, 110LBb, 110RTa, 110RTb, 110RBa and 110RBb, local X switch blocks 210a and 210b, auxiliary X switch blocks 220a and 220b, local Y switch block 310, auxiliary Y switch blocks 321a, 321b, 322a and 322b, Y lines 31a, 31b, 32a and 32b, and dummy Y switch blocks 331a, 331b, 332a and 332b. The dummy Y switch blocks 331a, 331b, 332a and 332b can be set in the outer regions of the upper and lower ends of the unit regions 110LTa, 110LTb, 110LBa, 110LBb, 110RTa, 110RTb, 110RBa and 110RBb in the second direction Y. The dummy Y switch blocks 331a, 331b, 332a, and 332b may include: a first left dummy Y switch block 331a, disposed in the upper outer region of the first upper left cell region 110LTa in the first column C1; a first right dummy Y switch block 331b, disposed in the upper outer region of the first upper right cell region 110RTa in the second column C2; a second left dummy Y switch block 332a, disposed in the lower outer region of the second lower left cell region 110LBb in the first column C1; and a second right dummy Y switch block 332b, disposed in the lower outer region of the second lower right cell region 110RBb in the second column C2. Each of the dummy Y switch blocks 331a, 331b, 332a, and 332b may include a plurality of dummy Y switches DYS aligned and disposed along a first direction X. In one embodiment, the dummy Y switches DYS may include dummy Y transistors. In one embodiment, the dummy Y switch DYS may be electrically connected to the inner Y lines 32a and 32b. The dummy Y switch DYS may be in a floating state. In another embodiment, the dummy Y switch DYS may not be electrically connected to the inner Y lines 32a and 32b. The auxiliary Y switch YS may supply voltage or current to the outer Y lines 31a and 31b. The dummy Y switch DYS may not supply voltage or current to the inner Y lines 32a and 32b.

[0068] Figures 5A to 5C This is an illustrative representation of an embodiment according to the present disclosure. Figure 1 A block diagram of unit region 110. See [link / reference]. Figure 5A The unit region 110 may include unit segments 111. Unit segments 111 may include multiple units 10, which are arranged in a matrix at the intersections of multiple X-lines 20 and multiple Y-lines 30. See also... Figure 5BCell region 110 may include cell MAT (matrix) 112. Cell MAT 112 may include multiple cell segments 111 arranged in a matrix. For example, cell region 110 may include cell MAT 112 located at the intersection of two rows and two columns. Figure 5C The cell region 110 may include cell block 113. Cell block 113 may include multiple cells MAT 112 arranged in a matrix.

[0069] According to embodiments of this disclosure, certain units can receive current simultaneously or jointly from two switches located on both sides. Therefore, unit selection or enabling can be performed reliably.

[0070] According to embodiments of this disclosure, overcurrent phenomena that occur when the unit is disposed adjacent to both the local X switch and the local Y switch can be prevented.

[0071] According to embodiments of this disclosure, undercurrent can be prevented when the unit is located far from both the local X switch and the local Y switch.

[0072] While the present invention has been described with reference to specific embodiments, those skilled in the art will understand that various changes and modifications can be made without departing from the technical concept and scope of this disclosure as defined in the following claims. Furthermore, these embodiments can be combined to form other embodiments.

Claims

1. A semiconductor device, comprising: Local X-switch block; A first auxiliary X-switch block, which is aligned with and overlaps the local X-switch block in a first direction, is disposed in the first row; Multiple first unit regions, aligned with each other along the first direction, are disposed in the first row and located between the local X-switch block and the first auxiliary X-switch block; and A first X-ray extends from the local X-ray switch block to pass through the plurality of first unit regions along the first direction. The local X-switch block includes a plurality of local X-switches aligned with each other along a second direction, which is perpendicular to the first direction. The first auxiliary X switch block includes a first auxiliary X switch, and The first X-ray includes: A first external X-ray, electrically connected to the first auxiliary X-switch and the first local X-switch among the plurality of local X-switches; and The first internal X-ray is electrically connected to the second local X-switch among the plurality of local X-switches, but not electrically connected to the first auxiliary X-switch.

2. The semiconductor device of claim 1, further comprising: A second auxiliary X-switch block, which is aligned with and overlaps the local X-switch block in the first direction, is disposed in the second row; Multiple second unit regions, aligned with each other along the first direction, are arranged in the second row and located between the local X-switch block and the second auxiliary X-switch block; as well as A second X-ray extends from the local X-ray switch block to pass through the plurality of second unit regions along the first direction. The first auxiliary X switch block and the second auxiliary switch block are aligned with each other in the second direction. The second auxiliary X switch block includes a second auxiliary X switch, and The second X-ray includes: A second external X-ray, electrically connected to the second auxiliary X-ray switch and a third local X-ray switch among the plurality of local X-ray switches; and The second internal X-ray is electrically connected to the fourth local X-switch among the plurality of local X-switches, but not electrically connected to the second auxiliary X-switch.

3. The semiconductor device as claimed in claim 2, wherein: The first row and the second row are parallel to each other in the first direction and adjacent to each other in the second direction. The first external X-ray passes through the upper region of the plurality of first unit regions along the first direction. The first internal X-ray passes through the lower region of the plurality of first unit regions along the first direction. The second external X-ray passes through the lower region of the plurality of second unit regions along the first direction, and The second inner X-ray passes through the upper region of the plurality of second unit regions along the first direction.

4. The semiconductor device of claim 2, further comprising: The first dummy X switch block is located in the first row. in: The first dummy X-switch block and the local X-switch block are aligned in the first direction. The first dummy X switch block and the first auxiliary X switch block are aligned and adjacent in the second direction, and The first dummy X switch block includes the first dummy X switch.

5. The semiconductor device of claim 4, further comprising: The second dummy X switch block is located in the second row. in: The second dummy X-switch block is aligned with the local X-switch block in the first direction. The second dummy X switch block and the second auxiliary X switch block are aligned and adjacent in the second direction, and The second dummy X switch block includes the second dummy X switch.

6. The semiconductor device as described in claim 5, in, The first dummy X switch block and the second dummy X switch block, which are aligned with each other in the first direction, are disposed between the first auxiliary X switch block and the second auxiliary X switch block.

7. The semiconductor device of claim 5, wherein: The first internal X-ray is electrically connected to the first dummy X-ray switch, and The second internal X-ray is electrically connected to the second dummy X-switch.

8. The semiconductor device of claim 2, further comprising: A first local Y-switch block is disposed in the second direction between a first first unit region located in the first row of the plurality of first unit regions and a first second unit region located in the second row of the plurality of second unit regions; as well as A first inner Y-line, which extends from the first local Y-switch block along the second direction through the first first unit region of the plurality of first unit regions and the first second unit region of the plurality of second unit regions.

9. The semiconductor device as claimed in claim 8, in, The first first unit region in the plurality of first unit regions in the first row and the first second unit region in the plurality of second unit regions in the second row are aligned with each other and adjacent to each other in the second direction.

10. The semiconductor device of claim 8, further comprising: A first auxiliary Y-switch block is disposed between a second first unit region in the plurality of first unit regions of the first row and a second second unit region in the plurality of second unit regions of the second row, wherein the first auxiliary Y-switch block overlaps and is aligned with the first local Y-switch block in the first direction; and A first outer Y-line, which originates from the first auxiliary Y-switch block and passes through the second first unit region and the second second unit region of the plurality of first unit regions along the second direction.

11. The semiconductor device as claimed in claim 10, in, The second first unit region in the plurality of first unit regions in the first row and the second second unit region in the plurality of second unit regions in the second row are aligned with each other and adjacent to each other in the second direction.

12. The semiconductor device of claim 10, wherein: The first local Y-switch block includes a plurality of first local Y switches aligned with each other along the first direction. The first auxiliary Y switch block includes a first auxiliary Y switch. The first external Y-line is electrically connected to the first local Y switch and the first auxiliary Y switch in the first local Y switch, and The first inner Y-line is electrically connected to the second first local Y-switch in the first local Y-switch, but not electrically connected to the first auxiliary Y-switch.

13. The semiconductor device of claim 12, further comprising: A first dummy Y-switch block is disposed between the second first unit region and the second second unit region in the plurality of first unit regions. The first dummy Y switch block and the first auxiliary Y switch block are aligned and adjacent in the first direction.

14. The semiconductor device of claim 2, wherein: The upper region of the local X-switch block, the first unit region, and the first auxiliary X-switch block are aligned in the first row, and The lower region of the local X-switch block, the second unit region, and the second auxiliary X-switch block are aligned in the second row.

15. The semiconductor device as claimed in claim 1, in, The area occupied by the first auxiliary X switch block is smaller than the area occupied by the local X switch block.

16. A semiconductor device, comprising: Local Y-switch block; A first auxiliary Y-switch block, which is vertically aligned with and overlaps the left side region of the local Y-switch block, is arranged in the first column; Multiple first unit regions, aligned with each other along the vertical direction, are arranged in the first column and located between the local Y-switch block and the first auxiliary Y-switch block; and A first Y-line extends from the local Y-switch block to pass through the plurality of first unit regions along the vertical direction. The local Y-switch block includes a plurality of local Y-switches aligned along a horizontal direction, wherein the horizontal direction is perpendicular to the vertical direction. Wherein, the first auxiliary Y switch block includes a first auxiliary Y switch, and The first Y-line includes: A first external Y-line, which is electrically connected to the first auxiliary Y-switch and the first local Y-switch among the plurality of local Y-switches; and The first inner Y-line is electrically connected to the second local Y-switch among the plurality of local Y-switches, but not electrically connected to the first auxiliary Y-switch.

17. A semiconductor device, comprising: Multiple unit regions arranged in a matrix, wherein the matrix includes multiple rows and multiple columns; A first partial switch block is disposed in a first direction between the first unit regions among the plurality of unit regions, wherein the first partial switch block has a line segment shape extending in a second direction. A second partial switch block is disposed in the second direction between the second unit regions among the plurality of unit regions, wherein the second partial switch block has a line segment shape extending along the first direction; A first auxiliary switch block is disposed in the first direction between third unit regions among the plurality of unit regions, wherein the first auxiliary switch block and the first local switch block are aligned in the second direction; and A second auxiliary switch block is disposed in the second direction between the fourth unit regions among the plurality of unit regions, wherein the second auxiliary switch block and the second local switch block are aligned in the first direction. in: The first direction and the second direction are perpendicular to each other. The first local switching block completely overlaps with the first unit region in the first direction. The second local switching block completely overlaps with the second unit region in the second direction. The first auxiliary switch block partially overlaps with the third unit region in the first direction, and The second auxiliary switch block partially overlaps with the fourth unit region in the second direction.

18. The semiconductor device as claimed in claim 17, in, The first unit area includes an upper first unit area located in the first row and a lower first unit area located in the second row. Wherein, the upper region of the first local switch block is aligned with the upper first unit region in the first direction. Wherein, the lower region of the first partial switch block is aligned with the lower first unit region in the first direction. The third unit region includes an upper third unit region located in the first row and a lower third unit region located in the second row. The first auxiliary switch block includes: The upper first auxiliary switch block is aligned with the upper third unit region in the first direction; and The lower first auxiliary switch block is aligned with the lower third unit region in the first direction.

19. The semiconductor device as claimed in claim 17, in, The second unit area includes a left second unit area located in the first column and a right second unit area located in the second column. Wherein, the left side region of the second local switch block is aligned with the left second unit region in the second direction. Wherein, the right side region of the second local switch block is aligned with the right second unit region in the second direction. The fourth unit region includes a left fourth unit region located in the first column and a right fourth unit region located in the second column. The second auxiliary switch block includes: The left second auxiliary switch block is aligned with the left fourth unit region in the second direction; and The right second auxiliary switch block is aligned with the right fourth unit region in the second direction.

20. The semiconductor device of claim 17, further comprising: A first dummy switch block is disposed between the third unit regions in the first direction, wherein the first dummy switch block and the first auxiliary switch block are aligned in the second direction; and A second dummy switch block is disposed between the fourth unit regions in the second direction, wherein the second dummy switch block and the second auxiliary switch block are aligned in the first direction.

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