Apparatus for reducing parasitic plasma and substrate processing apparatus having the same

Abstract

In one embodiment of the disclosure, an apparatus for reducing parasitic plasma includes a gas manifold, a gas channel, and an insulator between the gas manifold and the gas channel to electrically isolate the gas channel from the gas manifold, wherein the gas manifold is metallic and grounded to reduce parasitic plasma within the gas manifold.

Description

Technical Field

[0001] This disclosure generally relates to apparatus for reducing parasitic plasmas and substrate processing equipment having the apparatus. More specifically, this disclosure relates to apparatus for reducing parasitic plasmas for use in a gas distribution system of a substrate processing equipment having the apparatus. Background Technology

[0002] In a typical plasma process, an RF generator produces power at the desired RF frequency and electrical parameters, and this power is transmitted to the plasma chamber via RF cables and a matching network. Vapor-phase reactions such as chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), atomic layer deposition (ALD), and plasma-enhanced atomic layer deposition (PEALD) can be used for a variety of applications, including depositing and etching materials on substrate surfaces. For example, vapor-phase reactions can be used to deposit and / or etch layers on substrates to form semiconductor devices, flat panel display devices, photovoltaic devices, microelectromechanical systems (MEMS), etc.

[0003] A typical substrate processing chamber for gas-phase reactions includes a reactor, one or more precursor gas sources fluidly coupled to the reactor, one or more carrier gas or purge gas sources fluidly coupled to the reactor, a gas distribution system for delivering one or more gases (e.g., one or more precursor gases and / or one or more carrier gases or purge gases) to the substrate surface, and an exhaust source fluidly coupled to the reactor. The substrate processing chamber typically also includes a base to hold the substrate in place during substrate processing. The base may be configured to move vertically to receive the substrate and / or may be rotated during substrate processing.

[0004] In substrate processing using plasma under low-pressure conditions, parasitic plasma can form within the gas supply path. Reducing parasitic plasma within the gas supply path during plasma-based substrate processing can be important for film quality and uniformity on the substrate.

[0005] Therefore, this disclosure provides an apparatus for reducing parasitic plasma and a substrate processing apparatus having the apparatus for reducing parasitic plasma. Summary of the Invention

[0006] This synopsis is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the following detailed description of exemplary embodiments of this disclosure. This synopsis is not intended to identify key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.

[0007] According to an exemplary embodiment, an apparatus for reducing parasitic plasma can be provided, comprising: a gas manifold; a gas passage; and an insulator located between the gas manifold and the gas passage to electrically isolate the gas passage from the gas manifold, wherein the gas manifold is metallic and grounded to reduce parasitic plasma within the gas manifold.

[0008] According to another exemplary embodiment, a substrate processing apparatus may be provided, comprising: a gas manifold; a gas channel; an insulator located between the gas manifold and the gas channel to electrically isolate the gas channel from the gas manifold; a spray head supporting the gas channel; an exhaust duct supporting the spray head; an external flow control ring and an internal control ring for controlling the flow of waste gas from a reaction space; a heater positioned facing the spray head to heat a substrate mounted on the heater; and a power supply coupled to the spray head, wherein the gas manifold is metallic and grounded to reduce parasitic plasma within the gas manifold, wherein the spray head, the exhaust duct, and the heater form a reaction space. Attached Figure Description

[0009] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements may be exaggerated relative to other elements to aid in understanding the embodiments shown in this disclosure.

[0010] Figure 1 A cross-sectional view of a prior art substrate processing apparatus is shown.

[0011] Figure 2 A cross-sectional view is shown of an apparatus for reducing parasitic plasmas and a substrate processing apparatus having the apparatus, according to exemplary embodiments of the present disclosure.

[0012] Figure 3 A cross-sectional view of a gas manifold of a substrate processing apparatus according to an exemplary embodiment of the present disclosure is shown.

[0013] Figure 4(a) shows an insulator of a substrate processing apparatus according to an exemplary embodiment of the present disclosure; Figure 4(b) shows an enlarged top view of an insulator of a substrate processing apparatus according to an exemplary embodiment of the present disclosure.

[0014] Figure 5 The top of the gas channel of a substrate processing apparatus according to an exemplary embodiment of the present disclosure is shown. Detailed Implementation

[0015] Although certain embodiments and examples are disclosed below, those skilled in the art will understand that the invention extends beyond the specific embodiments and / or uses disclosed herein, as well as their obvious modifications and equivalents. Therefore, it is intended that the scope of the disclosed invention should not be limited to the specific embodiments described below.

[0016] As used herein, the term "substrate" can refer to any one or more underlying materials, including any one or more underlying materials that can be modified or on which devices, circuits, or films can be formed. A "substrate" can be continuous or discontinuous; rigid or flexible; solid or porous; and combinations thereof. A substrate can be in any form, such as powder, plate, or workpiece. Plate-type substrates can include wafers or liquid crystal display panels of various shapes and sizes. Substrates can be made of semiconductor materials, including, for example, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide, or of amorphous materials, such as glass substrates for liquid crystal displays.

[0017] The illustrations presented herein are not intended to be actual views of any particular material, structure, or device, but are merely idealized representations used to describe embodiments of this disclosure.

[0018] The specific embodiments shown and described are illustrative of the invention and its best mode, and are not intended to limit the scope of aspects and embodiments in any way. In fact, for the sake of brevity, conventional manufacturing, connection, fabrication, and other functional aspects of the system may not be described in detail. Furthermore, the connecting lines shown in the figures are intended to represent exemplary functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in the actual system, and / or may not exist in some embodiments.

[0019] It should be understood that the configurations and / or methods described herein are exemplary in nature, and these specific embodiments or examples should not be considered limiting, as many variations are possible. The particular routines or methods described herein may represent one or more of any number of processing strategies. Therefore, the various actions shown may be performed in the order shown, in a different order, or in some cases omitted.

[0020] The subject matter of this disclosure includes all novel and non-obvious combinations and sub-combinations of various processes, systems and configurations, as well as other features, functions, actions and / or properties disclosed herein, and any and all equivalents thereof.

[0021] Substrate processing equipment

[0022] Figure 1A cross-sectional view of a prior art substrate processing apparatus 100 is shown. The prior art substrate processing apparatus 100 includes a gas manifold 10' made of a ceramic insulator; a gas channel 30; an insulator 20 located between the gas manifold 10' and the gas channel 30; a spray head 40 supporting the gas channel 30; an exhaust duct 50 supporting the spray head 40; an outer flow control ring 60 and an inner flow control ring 65 for controlling the flow of exhaust gas from a reaction space 80; a heater 70 positioned facing the spray head 40 to heat a substrate (not shown) mounted thereon; and a power supply (not shown) connected to the spray head 40. The spray head 40, exhaust duct 50, and heater 70 can form the reaction space 80. However, during high-frequency power (e.g., 60 MHz), parasitic plasmas may occur within the gas supply path (i.e., the gas manifold 10'), resulting in undesirable film quality, such as low film density, unintended film composition, and low film uniformity.

[0023] Figure 2 A cross-sectional view is shown of an apparatus for reducing parasitic plasma and a substrate processing apparatus 1 having the apparatus, according to an exemplary embodiment of the present disclosure.

[0024] refer to Figure 2 An apparatus for reducing parasitic plasma according to an exemplary embodiment of the present disclosure includes a gas manifold 10; a gas passage 30; and an insulator 20 located between the gas manifold 10 and the gas passage 30 to electrically isolate the gas passage 30 from the gas manifold 10. The gas manifold 10 is metallic and grounded to reduce parasitic plasma within the gas manifold 10.

[0025] Furthermore, the substrate processing apparatus 1 according to an exemplary embodiment of the present disclosure includes a gas manifold 10, a gas channel 30, and an insulator 20 located between the gas manifold 10 and the gas channel 30. The gas manifold 10 is metallic and grounded to reduce parasitic plasma within the gas manifold 10. The gas manifold 10 includes at least one grounding connection block 12 at its outer periphery. The insulator 20 electrically isolates the gas channel 30 from the gas manifold 10. The substrate processing apparatus 1 also includes an exhaust duct 50; an external flow control ring 60; an internal flow control ring 65; a heater 70; and a power supply (not shown). The exhaust duct 50 supports a spray head 40. The external flow control ring 60 and the internal flow control ring 65 control the flow of exhaust gas from a reaction space 80. The heater 70 is positioned facing the spray head 40 and heats a substrate (not shown) mounted on the heater 70. A power supply (not shown) is coupled to the spray head 40. The spray head 40, the exhaust duct 50, and the heater 70 form the reaction space 80.

[0026] Figure 3A cross-sectional view of a gas manifold 10 of a substrate processing apparatus 1 according to an exemplary embodiment of the present disclosure is shown. The gas manifold 10 includes a plurality of gas manifold holes 14 at the bottom of the gas manifold 10, wherein the pressure of the internal space of the gas manifold 10 is at least 7.5 Torr or at least 8 Torr when gas is supplied to the internal space of the gas manifold 10 to reduce parasitic plasma within the gas manifold 10.

[0027] Figure 4(a) shows an insulator 20 of a substrate processing apparatus 1 according to an exemplary embodiment of the present disclosure, and Figure 4(b) shows an enlarged top view of the insulator 20 of the substrate processing apparatus 1 according to an exemplary embodiment of the present disclosure. The insulator 20 includes a plurality of insulator holes 24, each of which extends from the bottom of the gas manifold 10 through to the top of the gas channel 30. The insulator 20 includes at least one of ceramic or celazole.

[0028] Figure 5 The top of a gas channel 30 of a substrate processing apparatus 1 according to an exemplary embodiment of the present invention is shown. The gas channel 30 includes a plurality of gas channel holes 34 at the top of the gas channel 30 to reduce plasma transport from the gas manifold 10. The patterns of the plurality of gas manifold holes 14, the plurality of insulator holes 24, and the plurality of gas channel holes 34 are aligned such that gas can flow through the plurality of gas manifold holes 14, the plurality of insulator holes 24, and the plurality of gas channel holes 34 without any gas leakage.

[0029] Reference Figures 3 to 5 During substrate processing under low-pressure conditions in the substrate processing apparatus 1, parasitic plasma can be generated inside the gas manifold 10. The gas manifold 10 may be formed of metal and grounded to reduce parasitic plasma within the gas manifold 10. The gas channel 30 includes a plurality of gas channel holes 34 at the top of the gas channel 30 to reduce plasma transport from the manifold 10.

[0030] The gas manifold orifice 14 formed at the bottom of the gas manifold 10 can reduce the gas conductivity of the internal space of the gas manifold 10 when gas is supplied to it, resulting in an increase in pressure therein. Therefore, parasitic plasma within the gas manifold 10 can be reduced. In some embodiments, the pressure in the internal space of the gas manifold 10 when gas is supplied can be at least 7.5 Torr, or more preferably at least 8 Torr.

[0031] The insulator hole 24 formed in the insulator 20 and the gas channel hole 34 formed in the gas channel 30 can reduce plasma transport from the gas manifold 10 to the internal space surrounded by the insulator 20 and the gas channel 30.

[0032] While the invention has been described with reference to specific examples including the currently preferred mode of carrying out the invention, those skilled in the art will understand that many variations and substitutions of the above-described system and techniques exist. It should be understood that other embodiments can be utilized and structural and functional modifications can be made without departing from the scope of the invention. Therefore, the spirit and scope of the invention should be broadly interpreted as set forth in the appended claims.

[0033] The above-described arrangement of the apparatus for reducing parasitic plasmas and the substrate processing equipment having such apparatus is merely illustrative of the application of the principles of the invention, and many other embodiments and modifications can be made without departing from the spirit and scope of the invention as defined in the claims. Therefore, the scope of the invention should not be determined by reference to the above description, but rather by the full scope of the appended claims and their equivalents.

Claims

1. An apparatus for reducing parasitic plasma, comprising: Gas manifold; Gas passage; as well as An insulator, located between the gas manifold and the gas passage, electrically isolates the gas passage from the gas manifold. The gas manifold is metallic and grounded to reduce parasitic plasma within it.

2. The apparatus for reducing parasitic plasma according to claim 1, wherein, The gas manifold includes at least one grounding connection block at the outer periphery of the gas manifold.

3. The apparatus for reducing parasitic plasma according to claim 1, wherein, The gas manifold includes a plurality of gas manifold orifices at the bottom of the gas manifold, wherein the pressure of the internal space of the gas manifold is at least 7.5 Torr or at least 8 Torr when gas is supplied to the internal space of the gas manifold to reduce parasitic plasma within the gas manifold.

4. The apparatus for reducing parasitic plasma according to claim 1, wherein, The insulator includes a plurality of insulator holes, wherein each of the plurality of insulator holes extends from the bottom of the gas manifold through to the top of the gas passage.

5. The apparatus for reducing parasitic plasma according to claim 1, wherein, The gas passage includes multiple gas passage holes at the top of the gas passage to reduce plasma transport from the gas manifold.

6. The apparatus for reducing parasitic plasma according to any one of claims 3 to 5, wherein, The patterns of the plurality of gas manifold holes, the plurality of insulator holes, and the plurality of gas channel holes are aligned so that gas can flow through the plurality of gas manifold holes, the plurality of insulator holes, and the plurality of gas channel holes without any gas leakage.

7. The apparatus for reducing parasitic plasma according to claim 1, wherein, The insulator is formed of at least one of ceramic and sepazole.

8. A substrate processing apparatus, comprising: Gas manifold; Gas passage; An insulator is located between the gas manifold and the gas passage to electrically isolate the gas passage from the gas manifold; The spray head supports the gas passage; Exhaust pipes, which support the spray heads; External flow control loop and internal control loop are used to control the flow of exhaust gas from the reaction space; A heater, positioned facing the spray head, to heat the substrate mounted on the heater; as well as The power supply is connected to the shower head. The gas manifold is metallic and grounded to reduce parasitic plasma within it. The spray head, exhaust pipe and heater define the reaction space.

9. The substrate processing apparatus according to claim 8, wherein, The gas manifold includes a grounding connection block at the outer periphery of the gas manifold.

10. The substrate processing apparatus according to claim 8, wherein, The gas manifold includes a plurality of gas manifold orifices at the bottom of the gas manifold, wherein the pressure of the internal space of the gas manifold is at least 7.5 Torr or at least 8 Torr when gas is supplied to the internal space of the gas manifold to reduce parasitic plasma within the gas manifold.

11. The substrate processing apparatus according to claim 8, wherein, The insulator includes a plurality of insulator holes, wherein each of the plurality of insulator holes extends from the bottom of the gas manifold through to the top of the gas passage.

12. The substrate processing apparatus according to claim 8, wherein, The gas passage includes a plurality of gas passage holes at the top of the gas passage to reduce plasma transport from the gas manifold to the internal space surrounded by the insulator and the gas passage.

13. The substrate processing apparatus according to any one of claims 10 to 12, wherein, The patterns of the plurality of gas manifold holes, the plurality of insulator holes, and the plurality of gas channel holes are aligned so that gas can flow through the plurality of gas manifold holes, the plurality of insulator holes, and the plurality of gas channel holes without any gas leakage.

14. The substrate processing apparatus according to claim 8, wherein, The insulator includes at least one of ceramic or sepazole.

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