A laser radar light chip wafer etching assembly

Abstract

The application discloses a kind of laser radar light chip wafer etching components, belong to chip wafer etching technical field, including etching equipment shell, the top of etching equipment shell is provided with protective cover, and control panel is arranged on protective cover, the inside of protective cover is provided with support mechanism, support mechanism includes the support seat of fixed mounting in the inside of protective cover, etching recess is arranged in the middle position of support seat, the part of support seat close to etching recess is provided with feeding assembly, and feeding assembly includes the feeding groove of being opened in the inside of support seat, the present application can realize the synchronous sliding feeding, accurate positioning of multiple wafers by setting feeding groove cooperate multiple wafer linkage structures;Collaborate flexible jacking support structure formed by telescopic air cylinder and return spring, wafer can be smoothly jacked up to carry out etching operation, effectively avoid wafer processing process to occur deviation, shake and misplacement problem, solve the defect of traditional equipment single piece processing, poor alignment stability, low processing efficiency.

Description

Technical Field

[0001] This invention relates to the field of chip wafer etching technology, and in particular to a laser radar chip wafer etching component. Background Technology

[0002] LiDAR optical chips contain submicron-level precision optical structures such as grating couplers, optical waveguides, and resonant cavities. The requirements for sidewall perpendicularity, linewidth consistency, and intra-wafer etching uniformity during dry etching are extremely high. The etching quality directly determines the transmission loss and coupling efficiency of the optical chip. Existing etching equipment typically uses a fixed stage to hold a single wafer. Conventional support plates rely solely on the contact of a single plane with the wafer, lacking a zoned airflow guidance structure. This makes it easy for airflow short-circuiting and eddy current dead zones to occur on the bottom protective gas surface of the wafer. Waste gas cannot be discharged in time, and corrosive gases continue to erode the back of the wafer, resulting in particle residue defects. Meanwhile, the traditional support structure uses a straight-through water cooling channel, which is prone to stagnation and uneven flow of cooling water. The temperature difference between the top and bottom of the cooling channel is large, which can only form discrete point heat dissipation on the wafer. The heat dissipation capacity is insufficient, and the heat generated by ion bombardment cannot be quickly dissipated, which can easily form local high-temperature hot spots, causing the photoresist to carbonize due to heat, and then leading to local over-etching and excessive roughness of the trench sidewalls. The entire wafer will also have obvious temperature gradients, and the etching depth between the center and the edge is large, which makes it difficult to meet the consistency requirements of mass precision processing of optical chips. Summary of the Invention

[0003] The purpose of this invention is to provide a laser radar optical chip wafer etching component to solve the problems mentioned in the background art, such as the wafer forming discrete point heat dissipation, insufficient heat dissipation capacity, inability to quickly dissipate the heat generated by ion bombardment, easy formation of local high temperature hot spots, causing photoresist to carbonize due to heat, and thus leading to local over-etching and excessive roughness of trench sidewalls.

[0004] To achieve the above objectives, the present invention provides the following technical solution: a laser radar optical chip wafer etching assembly, comprising an etching equipment housing, a protective cover at the top of the etching equipment housing, and a control panel on the protective cover; a support mechanism inside the protective cover, the support mechanism including a support base fixedly installed inside the protective cover; an etching groove at the middle position of the support base; a feeding assembly inside the support base near the etching groove; the feeding assembly including a feeding slot opened inside the support base; multiple wafer bodies slidably installed inside the feeding slot; the multiple wafer bodies being limited and connected by multiple limiting components; a telescopic air cylinder fixedly installed at the bottom end of the support base near the wafer bodies; a pressure-relieving component fixedly installed at the top end of the telescopic air cylinder for supporting the wafer bodies during the etching process; the pressure-relieving component including a support pressure plate fixedly installed at the output end of the telescopic air cylinder; and multiple cooling columns fixedly installed inside the support pressure plate for cooling and heat dissipation of the wafer bodies.

[0005] As a preferred embodiment of the present invention, the telescopic air cylinder includes a cylinder fixedly installed inside a support base. The bottom end of the cylinder is connected to an auxiliary air inlet pipe. A slide rod is slidably installed at the top end of the cylinder. The top end of the slide rod is fixedly connected to a support pressure plate. A return spring is fixedly installed between the end of the slide rod located inside the cylinder and the cylinder.

[0006] As a preferred embodiment of the present invention, the support base is equipped with an auxiliary air intake pipe connected to the output end of an external air pump. This auxiliary air intake pipe controls the extension and retraction of the telescopic air cylinder and supports the wafer body. The output end of the auxiliary air intake pipe is connected to the bottom end of the telescopic air cylinder. The inner wall of the etched groove is provided with a long groove, and the auxiliary air intake pipe is connected to the interior of the long groove. A miniature throttling and pressure reducing valve is provided on the inner wall of the communication port between the long groove and the auxiliary air intake pipe. An auxiliary exhaust pipe is connected to one end of the long groove and is connected to the input end of the external air pump. A filter component is provided on the auxiliary exhaust pipe.

[0007] As a preferred embodiment of the present invention, a cleaning plate for cleaning impurities at the bottom of the wafer body is fixedly installed inside the support base near the wafer body. The interior of the cleaning plate is connected to an auxiliary exhaust pipe, and an electrostatic adsorption plate is fixedly installed inside the cleaning plate. The electrostatic adsorption plate is electrically connected to an electrostatic generator.

[0008] As a preferred embodiment of the present invention, the limiting component includes a mounting plate fixedly installed inside the feeding trough, a support rod fixedly installed at the top of the mounting plate, an arc-shaped top plate fixedly installed at the top of the support rod, a plurality of wafer bodies fixedly connected by a connecting plate, a limiting strip fixedly installed at the bottom of the connecting plate, and the arc-shaped top plate slidably installed at the bottom of the limiting strip.

[0009] As a preferred embodiment of the present invention, breathable cotton is fixedly installed on the top of the support plate near the wafer body, and a first connecting pipe and a second connecting pipe are installed on the outer surface of the support plate through a refrigeration box. The first connecting pipe and the second connecting pipe are respectively used to circulate cold air inside the support plate, and multiple thin films are provided on the first connecting pipe and the second connecting pipe.

[0010] As a preferred embodiment of the present invention, the cooling column is fixedly installed with arc-shaped bumps near the top of the wafer body to form a continuous and fine gas flow channel between the bumps. The cooling column forms multiple small intervals through multiple partitions to prevent airflow turbulence in local areas. The bottom end of the cooling column is connected to an inlet and an outlet end through an external water pump input and output end, respectively. The inlet end is provided with a porous throttling core. The cooling column is provided with a stirring wire to agitate the internal cooling water source to accelerate the cooling of the wafer body.

[0011] As a preferred embodiment of the present invention, the protective cover is provided with an etching mechanism, which includes an etching head fixedly installed on the top of the etching equipment housing. A laser etching element is provided at one end of the etching head near the wafer body. An inflation tube is fixedly installed on the surface of the etching head near the support base, and a sealing gasket is fixedly installed at the bottom end of the inflation tube. A sealing groove is provided at the top of the support base, and the sealing gasket fits into the sealing groove.

[0012] As a preferred embodiment of the present invention, the etching head has an annular groove inside, and a plurality of damping springs for buffering pressure are fixedly installed inside the annular groove. The etching head has a vent hole near the outer side of the annular groove, and a fixing rod for stabilizing the etching process is fixedly installed inside the etching head.

[0013] As a preferred embodiment of the present invention, a protective mechanism is provided at the top of the etching equipment housing. The protective mechanism includes an air pump fixedly installed on the outside of the etching equipment housing. Multiple interconnected sealed airbags are provided in the internal gaps of the protective cover. The output end of the air pump is connected to the sealed airbags through an air outlet pipe. An annular air intake plate for discharging air from inside the protective cover is fixedly installed inside the protective cover. The annular air intake plate is connected to the input end of the air pump through a filter box. An air inlet plate for supplying air is fixedly installed on the inner wall of the protective cover. The air inlet plate is connected to the output end of the air pump through a box containing argon gas.

[0014] Compared with the prior art, the beneficial effects of the present invention are: This invention, through the setting of a feeding trough and the combination of multiple sets of wafer linkage structures, and the sliding limit cooperation of connecting plates, limiting strips and arc-shaped top plates, can realize the synchronous sliding feeding and precise positioning of multiple wafers. With the addition of a flexible lifting support structure composed of telescopic air cylinders and return springs, the wafers can be stably lifted for etching operations, effectively avoiding the problems of offset, shaking and misalignment during wafer processing. It solves the defects of traditional equipment such as single-wafer processing, poor alignment stability and low processing efficiency, and ensures the overlay accuracy of the micro-patterns of LiDAR optical chips.

[0015] This invention employs an array-type cooling column structure with arc-shaped bumps and partitions. The bumps form a continuous and uniform gas flow channel, and the partitions divide the support area into independent small sections, reducing airflow eddies and short-circuiting problems at the bottom of the wafer. At the same time, the cooling columns have built-in rotatable stirring wires and porous water inlet throttling cores. Combined with the overall cooling air circulation pipeline, this can balance the flow of cooling water in each path and actively disturb the cooling water to enhance heat exchange. This solves the problems of uneven heat dissipation and prominent local hot spots in traditional cooling structures, effectively avoiding photoresist carbonization, local over-etching or under-etching, and significantly improving the etching depth and morphological uniformity of the entire wafer.

[0016] This invention utilizes a cleaning plate with an electrostatic adsorption plate inside the support base to adsorb micro-particle impurities on the bottom surface of the wafer in real time during wafer support and positioning, reducing problems such as local wafer suspension and gas film breakage caused by particles. At the same time, the equipment is equipped with independent air intake and exhaust pipelines and filter components, which, together with the pipeline membrane, achieve pressure easing and balance in the cavity, stably expelling toxic and corrosive etch gases, avoiding cavity pressure buildup that could lift the wafer, and preventing air pressure fluctuations that could disturb the etching atmosphere, effectively reducing defects such as lateral drilling and pattern distortion.

[0017] This invention achieves a seal by fitting a sealing gasket between the bottom of the etching head and the sealing groove of the support base. Simultaneously, a damping spring pressure buffer structure is installed inside the etching head to achieve a flexible downward pressure seal, preventing equipment vibration and etching misalignment caused by rigid collisions. Combined with a continuous sealing airbag structure at the gaps in the protective cover, it comprehensively seals the equipment gaps, reducing the infiltration of external moisture and dust into the cavity. This prevents moisture from reacting with halogen etching gases to generate acid mist that corrodes the wafer, significantly reducing residual contamination defects on the wafer surface and ensuring the cleanliness and stability of the precision etching environment.

[0018] This invention, by equipping an integrated protective mechanism, introduces argon protective gas through an air pump linked to the air intake plate. Combined with an annular air intake plate and a filter box, it achieves gas circulation and replacement within the cavity and filtration and discharge of waste gas. This can quickly replace the air inside the cavity, isolate oxygen from interfering with the etching reaction, and maintain a stable, clean, and balanced etching condition for a long time. It effectively solves the problems of disordered atmosphere, drifting operating conditions, and poor etching repeatability of traditional equipment, and meets the stringent process requirements of sub-micron high-precision etching for LiDAR optical chips. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the overall structure of the present invention; Figure 2 This is a schematic diagram of the internal structure of the protective cover of the present invention; Figure 3 This is a schematic diagram of the support structure of the present invention; Figure 4 This is a schematic diagram of the internal structure of the support base of the present invention; Figure 5 This is a schematic diagram of the structure of the limiting component of the present invention; Figure 6 This is a schematic diagram of the pressure-relieving component of the present invention; Figure 7 This is a schematic diagram of the cooling column structure of the present invention; Figure 8 This is a schematic diagram of the internal structure of the cooling column of the present invention; Figure 9 This is a schematic diagram of the etching mechanism of the present invention.

[0020] In the diagram: 1. Etching equipment housing; 2. Protective cover; 3. Control panel; 4. Protective mechanism; 41. Air pump; 42. Air outlet pipe; 43. Filter box; 44. Annular suction plate; 45. Sealing airbag; 46. Air inlet plate; 5. Etching mechanism; 51. Etching head; 52. Fixing rod; 53. Damping spring; 54. Air inlet pipe; 55. Sealing gasket; 56. Laser etched part; 6. Support mechanism; 61. Support base; 62. Sealing groove; 63. Etching groove; 64. Feeding assembly; 641. Feeding chute; 642. Limiting component; 6421 6422. Connecting plate; 6423. Limiting strip; 6424. Arc-shaped top plate; 6425. Support rod; 6426. Mounting plate; 647. Wafer body; 648. Cleaning plate; 649. Auxiliary exhaust pipe; 640. Telescopic air cylinder; 641. Pressure relief component; 6422. Supporting pressure plate; 643. Breathable cotton; 6444. Membrane; 645. First connecting pipe; 646. Second connecting pipe; 6477. Cooling column; 6478. Partition plate; 6479. Arc-shaped protrusion; 6470. Stirring wire; 641. Long groove; 6420. Auxiliary air intake pipe. Detailed Implementation

[0021] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] Please see Figure 1-9This invention provides a laser radar optical chip wafer etching assembly, including an etching equipment housing 1, a protective cover 2 at the top of the etching equipment housing 1, and a control panel 3 on the protective cover 2. A support mechanism 6 is disposed inside the protective cover 2, including a support base 61 fixedly installed inside the protective cover 2. An etching groove 63 is disposed in the middle of the support base 61. A feeding assembly 64 is disposed inside the support base 61 near the etching groove 63. The feeding assembly 64 includes a feeding slot 641 formed inside the support base 61. A sliding support is installed inside the feeding slot 641. The device is equipped with multiple wafer bodies 643, which are connected by multiple limiting components 642. A telescopic air cylinder 646 is fixedly installed on the bottom end of the support base 61 near the wafer body 643. A pressure-relieving component 647 for supporting the wafer body 643 during the etching process is fixedly installed on the top end of the telescopic air cylinder 646. The pressure-relieving component 647 includes a support pressure plate 6471 fixedly installed on the output end of the telescopic air cylinder 646. Multiple cooling columns 6476 for cooling and heat dissipation of the wafer body 643 are fixedly installed inside the support pressure plate 6471.

[0023] Multiple wafer bodies 643 are pre-assembled in the feeding groove 641 inside the support base 61, and are fixed in an array manner by the limiting component 642 to ensure that the wafer bodies 643 are arranged neatly and without deviation. After the equipment is started, the feeding component 64 can drive multiple wafer bodies 643 to slide along the feeding groove 641 to complete continuous feeding and alignment, accurately conveying the wafer bodies 643 to be processed to the etching station above the etching groove 63. Subsequently, the telescopic air cylinder 646 at the bottom of the support base 61 is activated, driving the pressure-relieving component 647 at the top to lift upward as a whole, so that the support plate 6471 fits against the bottom of the wafer body 643 to complete stable support and bearing. Throughout the etching process, the cooling columns 6476 arranged in the internal array of the support plate 6471 continuously provide contact-type heat dissipation and cooling to the bottom of the wafer body 643. Together with the overall structure, the wafer body 643 is precisely etched. The entire set of equipment can simultaneously realize a continuous automated operation process of automatic feeding, precise support, real-time heat dissipation, and sealed etching, thereby improving the stability of LiDAR optical chip etching from the overall structure.

[0024] In some embodiments, the telescopic air pump 646 includes a cylinder fixedly installed inside the support base 61. The bottom end of the cylinder is connected to the auxiliary air inlet pipe 649. A slide rod is slidably installed at the top end of the cylinder. The top end of the slide rod is fixedly connected to the support pressure plate 6471. A return spring is fixedly installed between the end of the slide rod located inside the cylinder and the cylinder.

[0025] During operation, the auxiliary air inlet pipe 649 introduces compressed gas into the cylinder, gradually increasing the internal air pressure. This pushes the slide rod to slide smoothly upwards along the cylinder's axis, lifting the top support plate 6471 and completing the lifting and support action of the wafer body 643. This raises the wafer body 643 to the standard etching height, achieving flexible lifting and support for the wafer body 643. The lifting process is free of rigid impact, effectively preventing the wafer body 643 from vibrating, shifting, or chipping due to force. After a single-wafer etching operation is completed, the auxiliary air inlet pipe 649 stops supplying gas, releasing the internal air pressure. The previously compressed reset spring releases its elastic potential energy, pulling the slide rod downwards to automatically reset, causing the support plate 6471 to fall back to its initial position, completing one wafer body 643 support and reset process.

[0026] In some embodiments, an auxiliary air intake pipe 649 is installed inside the support base 61 through the output end of an external air pump. This auxiliary air intake pipe 649 controls the extension and retraction of the telescopic air cylinder 646 and supports the wafer body 643. The output end of the auxiliary air intake pipe 649 is connected to the bottom end of the telescopic air cylinder 646. An elongated groove 648 is formed on the inner wall of the etched groove 63, and the auxiliary air intake pipe 649 is connected to the interior of the elongated groove 648. A miniature throttling and pressure reducing valve is provided on the inner wall of the communication port between the elongated groove 648 and the auxiliary air intake pipe 649. An auxiliary exhaust pipe 645 is installed at one end of the elongated groove 648. The auxiliary exhaust pipe 645 is connected to the input end of the external air pump, and a filter component is provided on the auxiliary exhaust pipe 645.

[0027] The external air pump outputs regulated gas through the auxiliary air inlet pipe 649. When the external air pump inputs regulated gas, the high-pressure gas first fills the telescopic air cylinder (646) to provide lifting power, while the gas flowing to the long groove (648) undergoes a significant dynamic pressure reduction when passing through the micro throttling and pressure reducing valve, and is transformed into a weak and stable protective airflow that diffuses into the etching cavity. Through the physical throttling and diversion effect of the micro throttling and pressure reducing valve, the synchronous operation of the high-pressure airflow lifting support and the low-pressure airflow atmosphere compensation is achieved without the need for external electrical control feedback. On the one hand, it supplies gas to the telescopic air cylinder 646 to provide pneumatic power for the lifting support of the wafer body 643 and ensures the stable operation of the support mechanism 6. On the other hand, the auxiliary air inlet pipe 649 is connected to the long groove 648 on the inner wall of the etching groove 63, and the gas can fill the cavity space around the etching station to supplement the protective atmosphere in the cavity and balance the cavity pressure. During the etching process, the toxic and corrosive waste gas generated during etching, along with impurities in the cavity, will be collected inside the long groove 648 under the negative pressure of the air pump, and then transported out through the connected auxiliary exhaust pipe 645. The waste gas is filtered and purified by the filter components on the exhaust pipe before being discharged in a unified manner, realizing a dynamic cycle process of air intake and exhaust gas filtration in the etching cavity, and continuously maintaining the cleanliness and pressure stability of the gas in the cavity.

[0028] In some embodiments, a cleaning plate 644 for cleaning impurities at the bottom of the wafer body 643 is fixedly installed inside the support base 61 near the wafer body 643. The interior of the cleaning plate 644 is connected to the auxiliary exhaust pipe 645, and an electrostatic adsorption plate is fixedly installed inside the cleaning plate 644. The electrostatic adsorption plate is electrically connected to an electrostatic generator.

[0029] Throughout the entire process of wafer body 643 feeding, lifting support, and etching, the cleaning plate 644 inside the support base 61 is continuously in operation. An electrostatic generator supplies power to the electrostatic adsorption plate inside the cleaning plate 644, generating a stable electrostatic adsorption force. Microparticles, dust, process residues, and other impurities adhering to the bottom of the wafer body 643 during feeding, sliding, lifting, and bonding are completely adsorbed and retained by the electrostatic adsorption plate. Simultaneously, the cleaning plate 644 is connected to the auxiliary exhaust pipe 645. Relying on the negative pressure suction of the exhaust pipe, fine impurities adsorbed on the board surface are continuously extracted and cleaned, preventing impurity accumulation and ensuring that the bottom surface of the wafer body 643 remains clean and flat, effectively reducing the particle defect rate of the wafer body 643.

[0030] In some embodiments, the limiting component 642 includes a mounting plate 6425 fixedly installed inside the feeding trough 641. A support rod 6424 is fixedly installed at the top of the mounting plate 6425, and an arc-shaped top plate 6423 is fixedly installed at the top of the support rod 6424. Multiple wafer bodies 643 are fixedly connected by a connecting plate 6421. A limiting strip 6422 is fixedly installed at the bottom of the connecting plate 6421, and the arc-shaped top plate 6423 is slidably installed at the bottom of the limiting strip 6422.

[0031] Multiple wafer bodies 643 are connected in series and fixed into an overall array structure via connecting plates 6421. Each connecting plate 6421 has a limiting strip 6422 fixedly installed at its bottom. Inside the feeding groove 641, a mounting plate 6425, a support rod 6424, and an arc-shaped top plate 6423 form a fixed limiting support structure. The arc-shaped top plate 6423 slides and fits against the bottom of the limiting strip 6422. During operation, the series-connected wafer body array 643 slides along the feeding groove 641, feeding the wafers. During this sliding process, the arc-shaped top plate 6423 always slides and engages with the limiting strip 6422, providing vertical support and lateral limiting for the wafer bodies 643. This reduces overlay deviations caused by micro-slippage of the wafer bodies 643 during etching, ensuring the precision of the micro-pattern processing of the optical chip.

[0032] In actual process flow, the wafer body (643) can be directly engaged with the connecting plate (6421) through its inactive edge area. As another preferred isolation and transmission method, multiple wafer bodies (643) can also be pre-loaded in a standard quartz tray carrier. In this case, the physical connection, locking, and sliding friction of the connecting plate 6421 and the limiting strip 6422 all act on the edge extension members of the external transition carrier, completely isolating them from the active etched area of ​​the wafer body 643 in physical space. Thus, multiple sets of carriers can be automatically fed and aligned along the feed groove 641 by the limiting component 642 without contacting the wafer body 643, reducing particle contamination of the semiconductor wafer caused by physical friction.

[0033] In some embodiments, a breathable cotton 6472 is fixedly installed on the support plate 6471 near the top of the wafer body 643. A first connecting pipe 6474 and a second connecting pipe 6475 are installed on the outer surface of the support plate 6471 through a cooling box. The first connecting pipe 6474 and the second connecting pipe 6475 are respectively used to circulate cold air inside the support plate 6471, and a plurality of thin films 6473 are provided on the first connecting pipe 6474 and the second connecting pipe 6475.

[0034] In this process, after the wafer body 643 is lifted and attached to the support plate 6471, the breathable cotton 6472 at the top of the support plate 6471 is directly and flexibly attached to the bottom of the wafer body 643. The cold air input through the first connecting pipe 6474 and the second connecting pipe 6475 passes through the breathable cotton 6472 after being stabilized by the thin film 6473. This is specifically used to form a low-temperature adaptive dynamic buffer protective gas film between the bottom of the wafer body 643 and the arc-shaped protrusion 6478 at the top of the cooling column 6476, preventing large-scale scratches on the back side. Meanwhile, the water circulating inside the cooling column 6476 is specifically responsible for absorbing and diverting the large amount of high-flux heat generated by high-energy ion bombardment that penetrates the protective gas film in situ. This provides low-temperature heat dissipation to the bottom of the wafer body 643 from all directions, continuously offsetting the high-temperature heat generated by the etching ion bombardment and maintaining a constant temperature for the wafer body 643.

[0035] In some embodiments, the cooling column 6476 is fixedly mounted with arc-shaped bumps 6478 near the top of the wafer body 643 to form continuous and fine gas flow channels between the bumps. The cooling column 6476 forms multiple small intervals through multiple partitions 6477 to prevent airflow turbulence in local areas. The bottom end of the cooling column 6476 is connected to an inlet and an outlet end through an external water pump input and output end, respectively. The inlet end is provided with a porous throttling core. The cooling column 6476 is provided with an agitator wire 6479 to agitate the internal cooling water source to accelerate the cooling of the wafer body 643.

[0036] During the etching and heat dissipation process, the top of the cooling pillar 6476 is supported by arc-shaped bumps 6478 on the bottom surface of the wafer body 643. The gaps between the bumps form a through-type fine gas flow channel, allowing for uniform flow of protective gas and forming a continuous and stable gas film at the bottom of the wafer body 643. The interior of the cooling pillar 6476 is divided into multiple independent small sections by partitions 6477. This partitioned structure avoids local airflow convergence and turbulence, and reduces airflow short-circuiting and eddy current dead zones. Simultaneously, the external water pump starts, and cooling water enters the cooling column 6476 through the inlet. The multi-hole throttling core built into the inlet can balance the water flow of each cooling column 6476, avoiding excessive or insufficient water flow in a single column. When the external water pump injects cooling water, the multi-hole throttling core diverts the flow. When the water flows through each small interval, it is subjected to the adaptive flow guidance and damping effect of the static spiral stirring wire 6479, which forces the generation of micro-standing vortices and spiral turbulence under static conditions, thereby breaking the fluid boundary layer, realizing active heat transfer enhancement, and comprehensively improving the heat dissipation uniformity and efficiency of the wafer body 643.

[0037] In some embodiments, the protective cover 2 is provided with an etching mechanism 5. The etching mechanism 5 includes an etching head 51 fixedly installed on the top of the etching equipment housing 1. A laser etching element 56 is provided at one end of the etching head 51 near the wafer body 643. An inflation tube 54 is fixedly installed on the surface of the etching head 51 near the support base 61, and a sealing gasket 55 is fixedly installed at the bottom end of the inflation tube 54. A sealing groove 62 is opened at the top of the support base 61, and the sealing gasket 55 is fitted into the sealing groove 62.

[0038] Once the wafer body 643 is precisely aligned with the etching station and stably supported, the etching mechanism 5 starts working. The laser etching element 56 at the bottom of the etching head 51 outputs an etching light source to perform precise laser etching on the wafer body 643 below. Before the etching operation, the gas inflator 54 inflates to adjust the state of the sealing gasket 55. The etching head 51 presses down to make the bottom sealing gasket 55 precisely embedded in the sealing groove 62 at the top of the support 61, forming a fitted sealing structure that completely seals and isolates the etching area of ​​the wafer body 643, isolating it from external environmental interference with the etching reaction. This ensures that the entire etching process is completed in a sealed, independent space, guaranteeing a pure and stable etching reaction atmosphere.

[0039] In some embodiments, an annular groove is provided inside the etching head 51, and a plurality of damping springs 53 for buffering pressure are fixedly installed inside the annular groove. A vent hole is provided on the outer side of the etching head 51 near the annular groove, and a fixing rod 52 for stabilizing the etching process is fixedly installed inside the etching head 51.

[0040] During the pressing and sealing process of the etching head 51, multiple sets of damping springs 53 inside the annular groove of the etching head 51 are compressed, which plays a flexible buffering role, offsetting the mechanical impact force generated during the pressing process, and avoiding equipment vibration and work position displacement caused by rigid hard contact between the etching head 51 and the support seat 61. At the same time, the vent on the outside of the annular groove can connect the inner and outer spaces in real time, balance the air pressure difference generated inside the etching head 51 during the pressing process, and avoid sealing displacement and pressure unevenness caused by air pressure accumulation in the cavity. The fixing rod 52 inside the etching head 51 plays a structural reinforcement role, improves the overall structural rigidity of the etching head 51, and prevents structural deformation and alignment deviation from occurring during long-term pressing operations.

[0041] In some embodiments, a protective mechanism 4 is provided at the top of the etching equipment housing 1. The protective mechanism 4 includes an air pump 41 fixedly installed on the outside of the etching equipment housing 1. A plurality of interconnected sealed airbags 45 are provided in the internal gaps of the protective cover 2. The output end of the air pump 41 is connected to the sealed airbags 45 through an air outlet pipe 42. An annular air intake plate 44 for discharging the air inside the protective cover 2 is fixedly installed inside the protective cover 2. The annular air intake plate 44 is connected to the input end of the air pump 41 through a filter box 43. An air inlet plate 46 for supplying air is fixedly installed on the inner wall of the protective cover 2. The air inlet plate 46 is connected to the output end of the air pump 41 through a box containing argon gas.

[0042] The outer air pump 41 operates continuously. On one hand, it inflates the connected sealed airbag 45 at the gaps of the protective cover 2 through the air outlet pipe 42, causing the airbag to expand and fill all assembly gaps and splicing gaps of the protective cover 2, achieving a complete seal of the protective cover 2 and reducing the infiltration of external impurities and moisture. On the other hand, the air pump 41, in conjunction with the argon gas chamber, continuously introduces argon inert protective gas into the cavity through the air inlet plate 46 on the inner wall of the protective cover 2, gradually replacing the original air, oxygen, and impurities in the cavity, preventing oxidation of the wafer body 643 and disruption of the etching reaction. At the same time, the annular suction plate 44 inside the protective cover 2, together with the filter box 43 and the input end of the air pump 41, forms a negative pressure suction circuit, continuously extracting waste gas, reaction impurities, and fine dust from the cavity, which are then filtered and purified before being discharged. This achieves continuous replacement of the inert atmosphere and continuous purification of impurities in the cavity, maintaining a closed, clean, and stable etching working environment throughout the process.

[0043] Working Principle: The equipment relies on the outer shell 1 of the etching equipment as a supporting base, and the top protective cover 2 forms a closed etching working space. Multiple wafer bodies 643 are pre-assembled in the feeding groove 641 inside the support base 61. The array-type limiting component 642 completes the array-type limiting and fixing, ensuring that the wafer bodies 643 are arranged neatly without deviation. After the equipment is started, the feeding component 64 can drive multiple wafer bodies 643 to slide along the feeding groove 641 to complete continuous feeding and alignment, accurately conveying the wafer bodies 643 to be processed to the etching station above the etching groove 63. Subsequently, the telescopic air cylinder 646 at the bottom of the support base 61 is activated, driving the pressure-relieving component 647 at the top to lift upwards, so that the support plate 6471 fits against the bottom of the wafer body 643 to complete stable support and bearing. Throughout the etching process, the cooling columns 6476 arranged in the internal array of the support plate 6471 continuously provide contact-type heat dissipation and cooling to the bottom of the wafer body 643. Together with the overall structure, the wafer body 643 is precisely etched. The entire set of equipment can simultaneously realize a continuous automated operation process of automatic feeding, precise support, real-time heat dissipation, and sealed etching, thereby improving the stability of LiDAR optical chip etching from the overall structure.

[0044] In the description of this invention, only preferred embodiments are described, but the scope of protection of this invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in this invention, based on the technical solution and inventive concept of this invention, should be covered within the scope of protection of this invention.

Claims

1. A laser radar optical chip wafer etching assembly, comprising an etching equipment housing (1), characterized in that: The top of the etching equipment housing (1) is provided with a protective cover (2), and a control panel (3) is provided on the protective cover (2). A support mechanism (6) is provided inside the protective cover (2). The support mechanism (6) includes a support base (61) fixedly installed inside the protective cover (2). An etching groove (63) is provided in the middle of the support base (61). A feeding assembly (64) is provided inside the support base (61) near the etching groove (63). The feeding assembly (64) includes a feeding slot (641) opened inside the support base (61). Multiple wafer bodies (641) are slidably installed inside the feeding slot (641). 43), and multiple wafer bodies (643) are connected by multiple limiting components (642). The support base (61) is fixedly installed with a telescopic air cylinder (646) near the bottom end of the wafer body (643). The top end of the telescopic air cylinder (646) is fixedly installed with a pressure-relieving component (647) for supporting the wafer body (643) during the etching process. The pressure-relieving component (647) includes a support pressure plate (6471) fixedly installed at the output end of the telescopic air cylinder (646). Multiple cooling columns (6476) for cooling and heat dissipation of the wafer body (643) are fixedly installed inside the support pressure plate (6471).

2. The laser radar optical chip wafer etching component according to claim 1, characterized in that: The telescopic air cylinder (646) includes a cylinder fixedly installed inside the support base (61). The bottom end of the cylinder is connected to the auxiliary air inlet pipe (649). A slide rod is slidably installed at the top end of the cylinder. The top end of the slide rod is fixedly connected to the support pressure plate (6471). A return spring is fixedly installed between the end of the slide rod located inside the cylinder and the cylinder.

3. The laser radar optical chip wafer etching component according to claim 1, characterized in that: The support base (61) is connected to an auxiliary air inlet pipe (649) via the output end of an external air pump. This auxiliary air inlet pipe (649) is used to control the extension and retraction of the telescopic air cylinder (646) and to support the wafer body (643). The output end of the auxiliary air inlet pipe (649) is connected to the bottom end of the telescopic air cylinder (646). The inner wall of the etched groove (63) is provided with a long groove (648), and the auxiliary air inlet pipe (649) is connected to the inside of the long groove (648). A miniature throttling and pressure reducing valve is provided on the inner wall of the communication port between the long groove (648) and the auxiliary air inlet pipe (649). An auxiliary exhaust pipe (645) is connected to one end of the long groove (648). The auxiliary exhaust pipe (645) is connected to the input end of the external air pump, and a filter component is provided on the auxiliary exhaust pipe (645).

4. The laser radar optical chip wafer etching component according to claim 1, characterized in that: The support base (61) is fixedly installed with a cleaning plate (644) for cleaning impurities at the bottom of the wafer body (643) near the interior of the wafer body (643). The interior of the cleaning plate (644) is connected to the auxiliary exhaust pipe (645), and an electrostatic adsorption plate is fixedly installed inside the cleaning plate (644). The electrostatic adsorption plate is electrically connected to the electrostatic generator.

5. The laser radar optical chip wafer etching component according to claim 1, characterized in that: The limiting component (642) includes a mounting plate (6425) fixedly installed inside the feeding trough (641). A support rod (6424) is fixedly installed at the top of the mounting plate (6425). An arc-shaped top plate (6423) is fixedly installed at the top of the support rod (6424). Multiple wafer bodies (643) are fixedly connected by a connecting plate (6421). A limiting strip (6422) is fixedly installed at the bottom of the connecting plate (6421). The arc-shaped top plate (6423) is slidably installed at the bottom of the limiting strip (6422).

6. The laser radar optical chip wafer etching component according to claim 1, characterized in that: The support plate (6471) is fixedly installed with breathable cotton (6472) near the top of the wafer body (643). The outer surface of the support plate (6471) is connected to the cooling box and a first connecting pipe (6474) and a second connecting pipe (6475) are installed. The first connecting pipe (6474) and the second connecting pipe (6475) are respectively used to circulate cold air inside the support plate (6471), and multiple films (6473) are provided on the first connecting pipe (6474) and the second connecting pipe (6475).

7. The laser radar optical chip wafer etching component according to claim 1, characterized in that: The cooling column (6476) is fixedly installed with arc-shaped bumps (6478) near the top of the wafer body (643) to form a continuous and fine gas flow channel between the bumps. The cooling column (6476) forms multiple small intervals through multiple partitions (6477) to prevent airflow turbulence in local areas. The bottom end of the cooling column (6476) is connected to the input and output ends of an external water pump and has a water inlet and a water outlet respectively. The water inlet is provided with a porous throttling core. The cooling column (6476) is provided with an agitator wire (6479) to agitate the internal cooling water source to accelerate the cooling of the wafer body (643).

8. The laser radar optical chip wafer etching component according to claim 1, characterized in that: The protective cover (2) is provided with an etching mechanism (5). The etching mechanism (5) includes an etching head (51) fixedly installed on the top of the etching equipment housing (1). A laser etching component (56) is provided at one end of the etching head (51) near the wafer body (643). An inflation tube (54) is fixedly installed on the surface of the etching head (51) near the support base (61). A sealing gasket (55) is fixedly installed at the bottom end of the inflation tube (54). A sealing groove (62) is opened at the top of the support base (61), and the sealing gasket (55) fits into the sealing groove (62).

9. A laser radar optical chip wafer etching component according to claim 8, characterized in that: The etching head (51) has an annular groove inside, and multiple damping springs (53) for buffering pressure are fixedly installed inside the annular groove. The etching head (51) has a vent hole near the outer side of the annular groove. A fixing rod (52) for stabilizing the etching process is fixedly installed inside the etching head (51).

10. A laser radar optical chip wafer etching component according to claim 1, characterized in that: The top of the etching equipment housing (1) is provided with a protective mechanism (4). The protective mechanism (4) includes an air pump (41) fixedly installed on the outside of the etching equipment housing (1). Multiple connected sealed airbags (45) are provided in the internal gap of the protective cover (2). The output end of the air pump (41) is connected to the sealed airbags (45) through the air outlet pipe (42). An annular air intake plate (44) for discharging the air inside the protective cover (2) is fixedly installed inside the protective cover (2). The annular air intake plate (44) is connected to the input end of the air pump (41) through the filter box (43). An air inlet plate (46) for supplying air is fixedly installed on the inner wall of the protective cover (2). The air inlet plate (46) is connected to the output end of the air pump (41) through a box containing argon gas.

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