Reconfigurable metamaterial unit, reconfigurable metamaterial integrator, aircraft skin

Abstract

The application discloses a reconfigurable metamaterial unit, a reconfigurable metamaterial integrator and an aircraft skin, comprising a multilayer dielectric layer; a receiving patch arranged on a first surface of the multilayer dielectric layer and integrated with a plurality of diodes; different switch state combinations of the plurality of diodes are used to change the current distribution mode on the receiving patch, so that the reconfigurable metamaterial unit has a plurality of working states, and the plurality of working states can generate a plurality of polarization states and phase states; a transmitting patch arranged on a second surface of the multilayer dielectric layer opposite to the first surface and coupled with the receiving patch through a vertical interconnection structure; and a biasing structure arranged between the transmitting patch and the receiving patch and used for providing a bias voltage for the plurality of diodes, so that not only the polarization selection and phase control functions can be realized on the same layer, but also the dual circular polarization and linear polarization can be realized on the same physical structure.

Description

Technical Field

[0001] This invention relates to the field of antenna technology, and in particular to a reconfigurable metamaterial unit, a reconfigurable metamaterial integrator, and an aircraft skin. Background Technology

[0002] Metamaterials, as artificially designed electromagnetic structures, possess electromagnetic property manipulation capabilities not found in natural materials, and have shown broad application prospects in radar, communication, and stealth technology in recent years. Especially in aircraft platforms, reconfigurable metamaterials are widely used to achieve dynamic beam scanning, polarization switching, and other functions to meet the needs of multifunctional radio frequency systems for aperture sharing and adaptive electromagnetic environments.

[0003] Existing reconfigurable metamaterial unit designs often employ functional layering or device redundancy to achieve electromagnetic parameter tunability. One existing approach uses separate polarization conversion and phase modulation layers to achieve polarization selection and beam deflection, respectively. The polarization conversion layer selects two orthogonal linear polarizations using switching devices, while the phase modulation layer relies on multi-bit phase-shifting networks or varactor arrays for continuous phase compensation. Another approach attempts to integrate active devices on the receiver and transmitter patches respectively to control polarization and phase, achieving dual circular polarization. However, these approaches suffer from the following problems: 1) The physical separation of functional modules necessitates the use of multilayer dielectric substrates and vertical interconnect structures in the reconfigurable metamaterial unit, increasing its thickness and weight, making it difficult to meet the stringent requirements of low profile and lightweight design for aircraft skin. 2) To achieve dual polarization or limited phase modulation, six or more PIN diodes or varactors are often integrated, leading to complex bias networks and significantly increased DC power consumption, posing challenges to heat dissipation and reliability in airborne environments. 3) Most schemes only support two polarization switching states (such as dual linear polarization or dual circular polarization), which cannot cover multiple polarization forms such as left-hand circular polarization, right-hand circular polarization, and linear polarization, thus limiting their adaptability in scenarios such as radar anti-jamming and multi-mode communication. 4) Due to the weak physical coupling between polarization and phase functions, problems such as deterioration of cross-polarization and increased insertion loss are prone to occur when switching between multiple switching states, affecting the overall radiation efficiency.

[0004] Therefore, a new reconfigurable metamaterial unit is needed to solve the above problems. Summary of the Invention

[0005] In view of the above problems, the purpose of this invention is to provide a reconfigurable metamaterial unit, a reconfigurable metamaterial integrator, and an aircraft skin, so as to not only realize polarization selection and phase control functions in the same layer, but also realize dual circular polarization and linear polarization in the same physical structure.

[0006] According to a first aspect of the present invention, a reconfigurable metamaterial unit is provided, comprising: a multilayer dielectric layer; a receiving patch disposed on a first surface of the multilayer dielectric layer, wherein a plurality of diodes are integrated on the receiving patch, and different combinations of switching states of the plurality of diodes are used to change the current distribution pattern on the receiving patch, so that the reconfigurable metamaterial unit has multiple operating states, the multiple operating states being capable of generating multiple polarization states and phase states; an emitting patch disposed on a second surface of the multilayer dielectric layer opposite to the first surface, and coupled to the receiving patch via a vertical interconnect structure; and a bias structure disposed between the emitting patch and the receiving patch for providing a bias voltage to the plurality of diodes.

[0007] Optionally, the plurality of polarization states includes at least one of left-hand circular polarization, right-hand circular polarization, and linear polarization, and each polarization state has two phase states, the plurality of diodes is at least four, and the diodes are PIN diodes.

[0008] Optionally, the receiving patch includes a conductive ring and two opposing conductive strips extending from the inner ring of the conductive ring toward the geometric center of the conductive ring, each of the conductive strips having two diodes spaced apart on the side facing the geometric center.

[0009] Optionally, the conductive strip extends into first and second branch structures at one end near the geometric center of the conductive ring, and each branch structure is provided with a diode.

[0010] Optionally, the diodes in the first branch structure are connected by a first conductive line, and the diodes in the second branch structure are connected by a second conductive line.

[0011] Optionally, the vertical interconnect structure includes a first to a fourth conductive via, and the bias structure includes a first bias unit that connects to the first conductive line through the first conductive via and to the receiving patch through the second conductive via; and a second bias unit that connects to the second conductive line through the third conductive via and to the receiving patch through the fourth conductive via.

[0012] According to a second aspect of the present invention, a reconfigurable metamaterial integrator is provided, comprising a plurality of reconfigurable metamaterial units as described above arranged in a unit periodic array, and a control circuit comprising a control unit corresponding to each of the reconfigurable metamaterial units, each of the control units being used to control the switching state of the plurality of diodes in the corresponding reconfigurable metamaterial unit.

[0013] Optionally, the control circuit is configured to calculate the required quantization phase value for each reconfigurable metamaterial unit based on the target beam direction and map it to a corresponding diode switch state control code to control the reconfigurable metamaterial integrator.

[0014] Optionally, the thickness of each layer of the multilayer dielectric layer and the cell period are set according to the center frequency of the reconfigurable metamaterial cell.

[0015] According to a third aspect of the invention, an aircraft skin is provided, which integrates a reconfigurable metamaterial integrator as described above.

[0016] The reconfigurable metamaterial unit, reconfigurable metamaterial integrator, and aircraft skin provided by this invention integrate multiple diodes into a receiving patch and utilize different combinations of switching states of the multiple diodes to change the current distribution on the patch, thereby completing the generation and switching of polarization states in the initial stage of energy coupling. This design, which integrates polarization selection and phase modulation functions in the same layer (receiving patch), significantly reduces the number of dielectric layers, vertical interconnect complexity, and overall cross-sectional thickness of the reconfigurable metamaterial unit, enabling it to meet the stringent requirements of lightweight and thin-film aircraft skin.

[0017] In a preferred embodiment, this application can generate three polarization states—left-hand circular polarization, right-hand circular polarization, and linear polarization—on a single physical structure by switching only four diodes. Each polarization can provide two 1-bit phase states: 0° and 180°. This greatly reduces the number of active devices, thereby reducing DC power consumption, simplifying the bias network, improving unit reliability and integration, and significantly reducing manufacturing costs.

[0018] In a preferred embodiment, this application integrates a reconfigurable metamaterial integrator into the interior of the aircraft skin, forming a distributed radiating metamaterial surface. This transforms the aircraft skin from a passive structure into an active electromagnetic device, thereby enabling dynamic polarization switching and beam deflection capabilities. Furthermore, based on the reconfigurable metamaterial integrator, "aperture sharing and functional reconfiguration" can be achieved. That is, multiple functions such as radar detection, directional communication, and electronic countermeasures can be implemented in a time-division or simultaneous manner on the same physical aperture, thereby replacing multiple traditional discrete antennas, significantly optimizing the platform's electromagnetic configuration, and enabling the flight platform to achieve multifunctionality, high performance, and low observability within a limited electromagnetic space. Attached Figure Description

[0019] The above and other objects, features and advantages of the present invention will become more apparent from the following description of embodiments of the invention with reference to the accompanying drawings, in which: Figures 1a-1d A schematic diagram of a reconfigurable metamaterial unit according to an embodiment of the present invention is shown; Figures 2a-2f The simulation diagram shows the amplitude of the transmission coefficient and the phase response of the reconfigurable metamaterial unit under vertically polarized incident light with multiple diodes in different switching states. Figures 3a-3b The simulation diagram shows the circular polarization axial ratio of a reconfigurable metamaterial unit under vertical polarization incident light with multiple diodes in different switching states.

[0020] Figure 4 A general functional diagram of a reconfigurable metamaterial integrator according to an embodiment of the present invention is shown. Detailed Implementation

[0021] Various embodiments of the invention will now be described in more detail with reference to the accompanying drawings. In the various drawings, the same elements or modules are indicated by the same or similar reference numerals. For clarity, the various parts in the drawings are not drawn to scale.

[0022] It should be understood that, in the following description, "circuit" may include single or combined hardware circuits, programmable circuits, switching state machine circuits, and / or elements capable of storing instructions executed by the programmable circuit. When an element or circuit is said to be "connected to" another element or "connected" between two nodes, it may be directly coupled or connected to the other element, or there may be intermediate elements; the connection between elements may be physical, logical, or a combination thereof. Conversely, when an element is said to be "directly coupled to" or "directly connected to" another element, it means that there are no intermediate elements between them.

[0023] Furthermore, certain terms are used in this patent specification and claims to refer to specific components. Those skilled in the art will understand that hardware manufacturers may use different names to refer to the same component. This patent specification and claims do not distinguish components based on differences in name, but rather on differences in function.

[0024] Furthermore, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0025] Figures 1a-1d A schematic diagram of a reconfigurable metamaterial unit according to an embodiment of the present invention is shown.

[0026] See Figure 1a The reconfigurable metamaterial unit 100 provided in this embodiment of the invention includes a multilayer dielectric layer, an emitter patch 120, a bias structure, a ground layer 140, and a receiver patch 130. The emitter patch 120 and the receiver patch 130 are connected by a vertical interconnect structure.

[0027] A multilayer dielectric layer is used to isolate the transmitter patch 120, the receiver patch 130, the ground layer 140, and the bias structure. For example, the multilayer dielectric layer includes a first dielectric layer 111, a second dielectric layer 112, and a third dielectric layer 113 arranged sequentially from top to bottom. The first dielectric layer 111 is disposed between the receiver patch 130 and the bias structure, the second dielectric layer 112 is disposed between the bias structure and the ground layer 140, and the third dielectric layer 113 is disposed between the ground layer 140 and the transmitter patch 120.

[0028] It is understood that the number of dielectric layers can be set according to the actual situation, and this application does not impose a specific limitation. For example, the bias cells in the bias structure can be placed in two different layers, and dielectric layers can be used to isolate the bias cells in the two different layers. In this case, the number of dielectric layers can be four. For ease of description, the following explanation uses three dielectric layers as an example.

[0029] See Figure 1a and Figure 1b The receiving patch 130 is disposed on the first surface of the multilayer dielectric layer (i.e., the upper surface of the first dielectric layer 111), and multiple diodes are integrated thereon. Different combinations of switching states of the multiple diodes are used to change the current distribution pattern on the receiving patch 130, so that the reconfigurable metamaterial unit 100 has multiple operating states.

[0030] The reconfigurable metamaterial unit 100 can generate multiple polarization states and phase states under various operating conditions. The multiple polarization states include at least one of left-handed circular polarization, right-handed circular polarization, and linear polarization. Each polarization state has two 1-bit phase states: 0° and 180°.

[0031] For example, the diodes can be Schottky diodes, varactor diodes, PIN diodes, etc. Preferably, multiple diodes are PIN diodes, and the number is four. Figure 1a and Figure 1b It is represented by 161-164.

[0032] Table 1 shows the polarization and phase states of the reconfigurable metamaterial unit 100 under different combinations of switching states of the first diode 161, the second diode 162, the third diode 163, and the fourth diode 164. The four-bit binary code corresponds to the switching state of the first diode 161, the second diode 162, the third diode 163, and the fourth diode 164, respectively. A 1 indicates that the corresponding diode is on, and a 0 indicates that the corresponding diode is off.

[0033] Table 1 1000 Left-handed circular polarization / 0° 0100 Left-handed circular polarization / 180° 0010 Right-hand circular polarization / 0° 0001 Right-hand circular polarization / 180° 1100 Vertical polarization / 0° 0011 Vertical polarization / 180° It is understood that although the embodiments of this application only show that the reconfigurable metamaterial unit 100 can realize vertical polarization in linear polarization, in other embodiments of this application, the reconfigurable metamaterial unit 100 can also realize horizontal polarization in linear polarization.

[0034] Further, see Figure 1b The receiving patch 130 includes a conductive ring and two opposing first conductive strips 131 and second conductive strips 132 extending from the inner ring of the conductive ring toward its geometric center. A first diode 161 and a second diode 162 are spaced apart on the side of the first conductive strip 131 facing the geometric center, and a third diode 163 and a fourth diode 164 are spaced apart on the side of the second conductive strip 132 facing the geometric center.

[0035] For example, the conductive ring provides a first bias voltage to the first terminals of a plurality of diodes based on the voltage provided by the first DC feed bias line.

[0036] For example, the conductive ring is a circular conductive ring with an outer ring radius of R1, an inner ring radius of R2, and a conductive strip width of W1. It is understood that in this application, the shape of the conductive ring is not limited to a circular conductive ring; it can also be an elliptical conductive ring, a square conductive ring, etc.

[0037] Furthermore, the first conductive strip 131 and the second conductive strip 132 extend into a first branch structure and a second branch structure near the geometric center of the conductive ring. A first diode 161 is disposed on the first branch structure of the first conductive strip 131, and a second diode 162 is disposed on the second branch structure. A third diode 163 is disposed on the first branch structure of the second conductive strip 132, and a fourth diode 164 is disposed on the second branch structure. The first diode 161 and the third diode 163 are connected by a first conductive line, and the second diode 162 and the fourth diode 164 are connected by a second conductive line.

[0038] It is understood that the number of diodes in this application is not limited to four. For example, it can be eight, in which case two synchronous switching diodes are provided on the first branch structure and the second branch structure of the first conductive strip 131 / second conductive strip 132, and the diodes can be connected in series or in parallel.

[0039] See Figure 1a and Figure 1c A bias structure is disposed between the first dielectric layer 111 and the second dielectric layer 112 to provide bias voltages for the plurality of diodes. For example, the bias structure includes a first bias unit 151 and a second bias unit 152, both of which are cylindrical with an axial length of l1 and a radius of r. It is understood that the shapes of the first bias unit 151 and the second bias unit 152 can be set as needed and are not limited to cylindrical shapes. For example, they can also be rectangular, square, etc. For example, the first bias unit 151 is connected to a second DC feed bias line to provide a second bias voltage for the first diode 161 and the third diode 163, and the second bias unit 152 is connected to a third DC feed bias line to provide a third bias voltage for the second diode 162 and the fourth diode 164.

[0040] It is understood that, in this application, the bias structure is not limited to including the first bias unit 151 and the second bias unit 152. In other embodiments of this application, the bias structure may also include four bias units, in which case the first diode 161 and the third diode 163 are not interconnected, and the second diode 162 and the fourth diode 164 are not interconnected, and each bias unit provides a bias voltage to the second terminal of a diode.

[0041] See Figure 1a and Figure 1d The transmitting patch 120 is disposed on the second surface of the multilayer dielectric layer opposite to the first surface (i.e., the lower surface of the third dielectric layer 113). It is connected to the first bias unit 151 and the second bias unit 152 respectively through a vertical interconnect structure to achieve electromagnetic coupling with the receiving patch 130. It is used to radiate electromagnetic waves with specific polarization and phase.

[0042] Furthermore, the emitter patch 120 adopts a hexagonal structure, which can be obtained by chamfering the four corners of a rectangle.

[0043] Furthermore, the vertical interconnect structure includes first to fourth conductive vias. See also Figure 1aThe second ends (i.e., the first conductive lines) of the first diode 161 and the third diode 163 are connected to the first bias unit 151 via a first conductive via. The second ends (i.e., the second conductive lines) of the second diode 162 and the fourth diode 164 are connected to the second bias unit 152 via a third conductive via. Both the first and second conductive vias penetrate the first dielectric layer 111. The first bias unit 151 and the second bias unit 152 are also connected to the emitter patch 120 via second and fourth conductive vias, respectively. The second and fourth conductive vias penetrate the third dielectric layer 113, the ground layer 140, and the second dielectric layer 112.

[0044] Understandably, when the bias structure has four bias units, the emitter patch 120 can also be connected to the four bias units of the bias structure through four conductive vias.

[0045] Furthermore, the thickness of each layer in the multilayer dielectric layers of the reconfigurable metamaterial unit 100 and the unit period P are determined according to the operating center frequency. For example, the operating center frequency can be the X-band. For example, the thicknesses of the first dielectric layer 111, the second dielectric layer 112, and the third dielectric layer 113 are h1-h3, respectively.

[0046] Furthermore, the method for fabricating the reconfigurable metamaterial unit 100 may include: constructing a full-wave electromagnetic simulation model of the reconfigurable metamaterial unit 100 as described above, verifying the performance of the reconfigurable metamaterial unit 100 under different operating conditions, and optimizing the integration positions of multiple diodes, the chamfer size of the emitter patch, and the geometric parameters of the vertical interconnect structure based on the verification results until the performance reaches the expected level, thereby obtaining a preset full-wave electromagnetic simulation model, and fabricating the reconfigurable metamaterial unit 100 based on the preset full-wave electromagnetic simulation model.

[0047] For example, the layers in the reconfigurable metamaterial unit 100 can be fabricated using a printed circuit board (PCB) process and a vertical interconnect structure can be created using a through-hole metallization process to achieve coupling between the emitter patch 120 and the receiver patch 130.

[0048] Figure 2a , Figure 2c as well as Figure 2e Simulation diagrams of the transmission coefficient amplitude response of the reconfigurable metamaterial unit 100 under different combinations of diode switching states under vertically polarized incident waves are shown. Figure 2a , Figure 2c as well as Figure 2e It can be seen that the transmission amplitude of the reconfigurable metamaterial unit 100 remains at a high and relatively stable level within the operating frequency band. This indicates that the reconfigurable metamaterial unit 100 can maintain good transmission efficiency while achieving polarization and phase modulation.

[0049] Figure 2b , Figure 2d as well as Figure 2f Simulation diagrams of the transmission coefficient phase response of the reconfigurable metamaterial unit 100 under different combinations of diode switching states under vertically polarized incident waves are shown. Figure 2b , Figure 2d as well as Figure 2f It can be seen that for the same polarization state (such as the "1000" and "0100" states corresponding to left-hand circular polarization), the phase of its transmission coefficient is stably different by about 180° over a wide frequency band.

[0050] Figures 3a-3b Simulation diagrams of the circular polarization axial ratio of the reconfigurable metamaterial unit 100 under left-handed and right-handed circular polarization under vertically polarized incident radiation are shown respectively. Figure 3a and Figure 3b It can be seen that the circular polarization axis ratio is basically the same in different phases of left-handed circular polarization / right-handed circular polarization.

[0051] Figure 4 A general functional diagram of a reconfigurable metamaterial integrator according to an embodiment of the present invention is shown.

[0052] See Figure 4 The reconfigurable metamaterial integrator 200 includes multiple reconfigurable metamaterial units 100 arranged in a unit periodic P array. The reconfigurable metamaterial integrator 200 is used to receive electromagnetic signals and control the electromagnetic wave reflection / refraction angle, thereby realizing beam deflection and beam scanning.

[0053] Furthermore, the reconfigurable metamaterial integrator 200 also includes a feed antenna, wherein the feed antenna is used to illuminate the reconfigurable metamaterial integrator 200.

[0054] Furthermore, the reconfigurable metamaterial integrator 200 also includes a control circuit 300, which includes a control unit corresponding to each reconfigurable metamaterial unit 100. Each control unit is used to control the switching states of multiple diodes in the corresponding reconfigurable metamaterial unit 100. For example, the control circuit 300 is a digital control circuit. For example, the control unit may employ a bias circuit driven by an FPGA (Field-Programmable Gate Array).

[0055] Furthermore, the control circuit 300 can calculate the quantization phase value required for each reconfigurable metamaterial unit 100 according to the target beam direction, and then (through a lookup table as shown in Table 1) map it to the corresponding diode switch state control code to control the reconfigurable metamaterial unit 100. After that, the binary code corresponding to the entire reconfigurable metamaterial integrator 200 is switched synchronously to achieve rapid beam scanning.

[0056] Specifically, taking the target beam direction as For example, the compensation phase of the reconfigurable metamaterial unit (m, n) in the reconfigurable metamaterial integrator 200 can be expressed as ΔΦ(x m y n )=−k0sinθ(x m cosφ+y n sinφ)+k0R mn +ϕ0, where k0 is the wave number of free space, R mn ϕ0 is the distance from the (m,n)th element to the feed antenna, and ϕ0 is the reference phase.

[0057] Since the reconfigurable metamaterial unit 100 contains two switching phases, the compensation phase calculated by the above formula needs to be quantized by 1 bit (0° or 180°). The quantization relationship can be expressed as:

[0058] It is understood that the present invention also provides an aircraft skin that integrates a reconfigurable metamaterial integrator 200 as described above, the reconfigurable metamaterial integrator 200 comprising a plurality of reconfigurable metamaterial units 100 arranged in a unit periodic P array.

[0059] The reconfigurable metamaterial unit and integrator provided in this invention integrate multiple diodes onto a receiving patch and utilize different combinations of switching states of the diodes to change the current distribution on the patch, thereby completing the generation and switching of polarization states in the initial stage of energy coupling. This design, which integrates polarization selection and phase modulation functions into the same tuning mechanism, significantly reduces the number of dielectric layers, vertical interconnect complexity, and overall profile thickness of the reconfigurable metamaterial unit, enabling it to meet the stringent requirements of lightweight and thin-film design for aircraft skin.

[0060] Furthermore, this application can generate three polarization states—left-hand circular polarization, right-hand circular polarization, and linear polarization—on a single physical structure by switching only four diodes. Each polarization can provide two 1-bit phase states: 0° and 180°. This greatly reduces the number of active devices, thereby reducing DC power consumption, simplifying the bias network, improving unit reliability and integration, and significantly reducing manufacturing costs.

[0061] Furthermore, this application integrates a reconfigurable metamaterial integrator into the interior of the aircraft skin, forming a distributed radiating metamaterial surface. This transforms the aircraft skin from a passive structure into an active electromagnetic device, thereby enabling dynamic polarization switching and beam deflection capabilities. Based on the reconfigurable metamaterial integrator, it also achieves "aperture sharing and functional reconfiguration," meaning that multiple functions such as radar detection, directional communication, and electronic countermeasures can be implemented time-divisionally or simultaneously on the same physical aperture. This replaces multiple traditional discrete antennas, significantly optimizing the platform's electromagnetic configuration and allowing the flight platform to achieve multifunctionality, high performance, and low observability within a limited electromagnetic space.

[0062] As described above, these embodiments of the present invention do not exhaustively describe all details, nor do they limit the invention to specific embodiments. Clearly, many modifications and variations can be made based on the above description. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of the invention, thereby enabling those skilled in the art to effectively utilize the invention and its modifications. The scope of protection of this invention should be determined by the scope defined in the claims and their equivalents.

Claims

1. A reconfigurable metamaterial unit, characterized in that, include: Multilayer dielectric layer; A receiving patch is disposed on the first surface of the multilayer dielectric layer. Multiple diodes are integrated on the receiving patch. Different combinations of switching states of the multiple diodes are used to change the current distribution pattern on the receiving patch, so that the reconfigurable metamaterial unit has multiple operating states. The multiple operating states can generate multiple polarization states and phase states. The transmitting patch is disposed on the second surface of the multilayer dielectric layer opposite to the first surface, and is coupled to the receiving patch through a vertical interconnect structure; A bias structure, disposed between the transmitting and receiving patches, is used to provide a bias voltage for the plurality of diodes. The various polarization states include at least one of left-handed circular polarization, right-handed circular polarization, and linear polarization.

2. The reconfigurable metamaterial unit according to claim 1, characterized in that, Each polarization state has two phase states, the plurality of diodes is at least four, and the diodes are PIN diodes.

3. The reconfigurable metamaterial unit according to claim 1, characterized in that, The receiving patch includes a conductive ring and two opposing conductive strips extending from the inner ring of the conductive ring toward the geometric center of the conductive ring, with two diodes spaced apart on each side of the conductive strips facing the geometric center.

4. The reconfigurable metamaterial unit according to claim 3, characterized in that, The conductive strip extends into first and second branch structures from one end near the geometric center of the conductive ring, and each branch structure is provided with a diode.

5. The reconfigurable metamaterial unit according to claim 4, characterized in that, The diodes in the first branch structure are connected by a first conductive line, and the diodes in the second branch structure are connected by a second conductive line.

6. The reconfigurable metamaterial unit according to claim 5, characterized in that, The vertical interconnect structure includes first to fourth conductive vias, and the bias structure includes: The first bias unit is connected to the first conductive line through a first conductive via and to the emitter patch through a second conductive via; The second bias unit is connected to the second conductive line through a third conductive via and to the emitter patch through a fourth conductive via.

7. A reconfigurable metamaterial integrator, characterized in that, include: A plurality of reconfigurable metamaterial units as described in any one of claims 1 to 6, arranged in a periodic array of units, and The control circuit includes a control unit corresponding to each of the reconfigurable metamaterial units, each of the control units being used to control the switching state of the plurality of diodes in the corresponding reconfigurable metamaterial unit.

8. The reconfigurable metamaterial integrator according to claim 7, characterized in that, The control circuit is configured to calculate the required quantization phase value for each reconfigurable metamaterial unit based on the target beam direction and map it to the corresponding diode switch state control code to control the reconfigurable metamaterial integrator.

9. The reconfigurable metamaterial integrator according to claim 7, characterized in that, The thickness of each layer of the multilayer dielectric layer and the unit period are set according to the working center frequency of the reconfigurable metamaterial unit.

10. An aircraft skin, characterized in that, It integrates a reconfigurable metamaterial integrator as described in any one of claims 7-9.

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