Light emitting module and method of manufacturing a light emitting module

Abstract

The light emitting module of the present application improves the heat dissipation property against heat generated from a heat source such as a semiconductor laser element. The light emitting module has: a base portion having an upper surface and a lower surface, a mark being provided on a part of the lower surface, i.e., a mark region; one or more semiconductor laser elements disposed on the upper surface of the base portion, including a first semiconductor laser element that emits light in a first direction from a light emitting point of a light emitting surface; and a heat dissipation substrate having a heat dissipation portion joined to the lower surface of the base portion via a joining material, the region of the lower surface including the mark region being joined to the heat dissipation substrate via the joining material, a midpoint of the width of the mark region not being located between both ends of the first semiconductor laser element in the first direction when viewed from above, and a first imaginary straight line parallel to the first direction passing through the mark region and the first semiconductor laser element when viewed from above.

Description

Technical Field

[0001] This invention relates to light-emitting modules and methods for manufacturing light-emitting modules. Background Technology

[0002] Japanese Patent Application Publication No. 2004-22981 discloses a semiconductor package marked with product information. In this semiconductor package, a tab island is provided to mount a semiconductor chip, and product information is marked on the back of the tab island.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: (Japan) Japanese Patent Application Publication No. 2004-22981 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] In the technical field disclosed herein, there exists a technical problem of improving the heat dissipation performance for heat generated from heat sources such as semiconductor laser elements.

[0008] Alternatively, instead of the aforementioned technical problems, there is the challenge of miniaturizing the device or module.

[0009] In addition, not limited to the technical problems mentioned above, there are technical problems that can be identified based on the description in this application, based on common technical knowledge in the field of this disclosure.

[0010] Furthermore, not limited to the aforementioned technical problems, based on common technical knowledge in the field of this disclosure, from the viewpoint that the effect can be understood as the effect of the technical matters described in this application, the effect itself can be considered a technical problem.

[0011] The present invention solves at least one of the above-mentioned technical problems.

[0012] Technical solutions for solving technical problems

[0013] The light-emitting module disclosed in the embodiments includes: a base having an upper surface and a lower surface, wherein a mark is provided in a portion of the lower surface, i.e., a marking area; one or more semiconductor laser elements disposed on the upper surface of the base, including a first semiconductor laser element that emits light from a light-emitting point of a light-emitting surface in a first direction; and a heat-dissipating substrate having a heat-dissipating portion joined to the lower surface of the base via a bonding material, wherein a region of the lower surface including the marking area is joined to the heat-dissipating substrate via the bonding material, wherein, in the first direction, when viewed from above, the midpoint of the width of the marking area is not located between the two ends of the first semiconductor laser element, and, when viewed from above, a first imaginary straight line parallel to the first direction passes through the marking area and the first semiconductor laser element.

[0014] The light-emitting module disclosed in the embodiments can be manufactured by a manufacturing method including the following steps: a step of preparing a heat dissipation substrate; a step of preparing a light-emitting device, wherein a first semiconductor laser element is disposed on the upper surface of a base having an upper surface and a lower surface and a marking applied to a marking area that is part of the lower surface, such that light is emitted from a light-emitting point of a light-emitting surface in a first direction; a step of obtaining management information from the marking; a step of joining the base to the heat dissipation substrate by joining the region of the lower surface containing the marking area to the heat dissipation substrate via a bonding material; in the step of disposing of the first semiconductor laser element, the first semiconductor laser element is disposed on the upper surface of the base such that, when viewed from above, the midpoint of the width of the marking area in the first direction is not located between the two ends of the first semiconductor laser element and a first imaginary straight line parallel to the first direction when viewed from above passes through the marking area and the first semiconductor laser element. Attached Figure Description

[0015] Figure 1 This is a perspective view of the light-emitting module in the implementation method.

[0016] Figure 2 This is a perspective view of the light-emitting device according to the embodiment.

[0017] Figure 3 This is a top view of the light-emitting device according to the embodiment.

[0018] Figure 4A This is a side view of the light-emitting device according to the embodiment.

[0019] Figure 4B yes Figure 3 A cross-sectional view of the light-emitting device in the embodiment at the IVB-IVB line.

[0020] Figure 5 This is a perspective view of the interior of the package of the light-emitting device according to the embodiment.

[0021] Figure 6A This is a top view of the interior of the package of the light-emitting device in the embodiment.

[0022] Figure 6B It is Figure 6A The enlarged top view shows the enlarged internal space of the package.

[0023] Figure 7 It is a 3D view of the package.

[0024] Figure 8 yes Figure 7 A cross-sectional view of the package at line VIII-VIII.

[0025] Figure 9 This is a top view of the substrate.

[0026] Figure 10 This is a bottom view of the substrate.

[0027] Figure 11 yes Figure 9 A cross-sectional view of the matrix at the XI-XI line.

[0028] Figure 12 This is a top view showing the state in which other components are configured on the auxiliary mounting base.

[0029] Figure 13 This is a side view showing the state in which other components are configured on the auxiliary mounting base.

[0030] Figure 14 This is a top view of the light-emitting module in the implementation method.

[0031] Figure 15A This is a top view of the wiring board.

[0032] Figure 15B This is a magnified view of the positional relationship between the wiring board and semiconductor laser components, etc. Figure 15A A magnified view of a portion of the image.

[0033] Figure 15C yes Figure 15A A schematic cross-sectional view of the wiring substrate at the XVC-XVC line.

[0034] Figure 16 This is a top view showing the interior of the package of each light-emitting device in the light-emitting module of the embodiment. Detailed Implementation

[0035] In this specification or claims, the term "polygon" includes shapes formed by rounding, chamfering, corner beveling, or rounding the corners of polygons such as triangles and quadrilaterals. Furthermore, shapes formed by processing the middle portions of the sides, not limited to the corners (ends of the sides), are also referred to as polygons. In other words, shapes that are based on a polygon but have undergone partial processing are also included in the interpretation of "polygon" in this specification and claims.

[0036] Furthermore, this applies not only to polygons, but also to terms representing specific shapes such as trapezoids, circles, and concave / convex shapes. Additionally, the same applies when operations are performed on the edges that form the shape. That is, even if processing is performed on a corner or the middle portion of a single edge, the interpretation of "edge" includes the processed portion. It should be noted that when distinguishing between a "polygon" or "edge" without partial processing and the processed shape, it is labeled "rigid," for example, written as "rigid quadrilateral," etc.

[0037] Furthermore, in this specification or claims, the descriptions of top and bottom, left and right, front and back, front and back, front and back, inside and outside, etc., are merely descriptions of relative positions, orientations, directions, etc., and may not be consistent with the actual relationship in use.

[0038] Additionally, in the accompanying drawings, arrows are sometimes used to indicate directions such as the X, Y, and Z directions. The direction of these arrows is matched across multiple drawings of the same embodiment. Furthermore, in the drawings, the direction of the arrows labeled X, Y, and Z is designated as the positive direction, and the opposite direction as the negative direction. For example, the direction marked with X at the tip of the arrow is the X direction and is positive. It should be noted that in this specification, the positive X direction is referred to as the "positive X direction," and the opposite direction is referred to as the "negative X direction." The term "X direction" includes both positive and negative directions. The same applies to the Y and Z directions.

[0039] Furthermore, in this specification, when an object is described as "one or more," both the method of having one object and the method of having multiple objects are summarized and described separately. Therefore, by specifying "one or more," implementations having one or more objects, implementations having at least one object, and implementations having multiple objects are all supported.

[0040] Furthermore, in this specification, the description of "one or each" objects is a summary of descriptions of one object in an embodiment having one object, descriptions of one object in an embodiment having multiple objects, and descriptions of multiple objects separately in an embodiment having multiple objects. Therefore, by describing "one or each" objects, it is supported that in an embodiment having one object, at least one of these objects has description content; in an embodiment having multiple objects, each of these multiple objects has description content; and in an embodiment having one or more objects, all objects have description content.

[0041] Furthermore, in this specification, for example, when describing constituent elements, the terms "component" or "part" are sometimes used. "Companion" refers to an object that is physically treated as a single unit. An object that is physically treated as a single unit can also be described as an object treated as a component during the manufacturing process. On the other hand, "part" refers to an object that does not physically need to be treated separately. For example, "part" is used when partially capturing a part of a component, or when multiple components are grouped together as a single object.

[0042] It should be noted that the distinction between "component" and "part" in the above-mentioned writing does not imply a conscious limitation of the scope of claims in the interpretation of the theory of equality. That is, even if there is a constituent element described as a "component" in the claims, the applicant does not solely rely on this situation to consider that physically treating that constituent element individually is essential for the application of the present invention.

[0043] Furthermore, in this specification or claims, a certain constituent element may have multiple components. When these components are presented separately, they are sometimes distinguished by the prefixes "first" and "second." Additionally, the objects distinguished in this specification and the claims may differ. Therefore, even if a constituent element in the claims is described with the same appendix as in this specification, the object defined by that constituent element may not be consistent between this specification and the claims.

[0044] For example, in this specification, there are constituent elements distinguished by the designations "first," "second," and "third." When these constituent elements, marked with "first" and "third" in this specification, are described in the claims, it is easy to observe that they are sometimes distinguished by the designations "first" and "second" in the claims. In this case, the constituent elements marked "first" and "second" in the claims refer to the constituent elements marked "first" and "third" in this specification, respectively. Furthermore, this rule is not limited to constituent elements and can be reasonably and flexibly applied to other objects.

[0045] The following describes a method for implementing the present invention. Furthermore, specific methods for implementing the present invention will be described with reference to the accompanying drawings. It should be noted that the method for implementing the present invention is not limited to this specific method. That is, the illustrated embodiments are not the only way to implement the present invention. It should also be noted that the size, positional relationships, etc., of the components shown in the drawings are sometimes exaggerated for ease of understanding.

[0046] <Implementation Method>

[0047] The light-emitting module 901 of the embodiment will be described. Figures 1 to 16 This is a diagram illustrating an exemplary manner of the light-emitting device 1. Figure 1 This is a 3D view of the light-emitting module 901. Figure 2 This is a three-dimensional view of the light-emitting device 1. Figure 3 This is a top view of the light-emitting device 1. Figure 4A This is a side view of the light-emitting device 1. Figure 4B yes Figure 3 A cross-sectional view of the light-emitting device 1 at the IVB-IVB line. Figure 5 This is a three-dimensional view of the interior of the package 10 of the light-emitting device 1. Figure 6A This is a top view of the interior of the package 10 of the light-emitting device 1. Figure 6B It is Figure 6A An enlarged top view of the internal space of package 10. It should be noted that... Figure 6B In the middle, on the lower surface, the location of the marked area R1 where mark 13B is applied is indicated by a dashed shading line. Figure 7 This is a 3D view of package 10. Figure 8 yes Figure 7 A cross-sectional view of package 10 at line VIII-VIII. Figure 9 This is a top view of base 11. Figure 10 This is a bottom view of base 11. It should be noted that... Figure 10 In the middle, a shadow is applied to the marked area R1. Figure 11 yes Figure 9 A cross-sectional view of the substrate 11 at the XI-XI line. Figure 12 This is a top view showing the auxiliary mounting base 30 with other components configured on it. Figure 13 This is a side view of the auxiliary mounting base 30 with other components configured on it. Figure 14 This is a top view of the light-emitting module 901. It should be noted that... Figure 14 In the diagram, the positions of the first part P1 and the second part P2 are represented by shading lines pointing in different directions. Figure 15A This is a top view of the wiring board 101. It should be noted that... Figure 15AIn the diagram, the positions of the first semiconductor laser element 20A, the first auxiliary mounting base 30A, and the first part P1 are indicated by dashed shading when the light-emitting device 1 is installed. Figure 15B This is an enlarged view of the positional relationship between the heat dissipation portion 101D and the insulation portion 101F of the wiring board 101 and the first semiconductor laser element 20A, the first auxiliary mounting base 30A, and the first portion P1. Figure 15A A magnified view of a portion of the image. Figure 15C yes Figure 15A A schematic cross-sectional view of the wiring substrate 101 at the XVC-XVC line. Figure 16 This is a top view showing the internal package of each light-emitting device 1 in the light-emitting module 901. It should be noted that... Figure 4B , Figure 5 , Figure 6B as well as Figure 16 Wiring 60 is omitted in the text.

[0048] The light-emitting module 901 has multiple components. These components include one or more light-emitting devices 1, a wiring board 101, a connector 201, and a thermistor 301.

[0049] It should be noted that the light-emitting module 901 may also have other constituent elements besides these. For example, the light-emitting module 901 may also have a light-emitting device different from the light-emitting device 1. In addition, the light-emitting module 901 may not have some of the constituent elements listed herein.

[0050] The light-emitting device 1 comprises multiple components. These multiple components include a package 10, one or more semiconductor laser elements 20, one or more auxiliary mounting bases 30, one or more reflective components 40, one or more protective elements 50, multiple wirings 60, and optical components 70.

[0051] It should be noted that the light-emitting device 1 may also include other constituent elements. For example, the light-emitting device 1 may include a semiconductor laser element in addition to one or more semiconductor laser elements 20. Alternatively, the light-emitting device 1 may not include some of the constituent elements listed herein.

[0052] First, let’s explain each of the constituent elements.

[0053] (Package 10)

[0054] Package 10 includes a base 11 and a cover 14. The cover 14 is joined to the base 11 to form package 10. An internal space is defined within package 10 for configuring other components. This internal space is a closed space surrounded by the base 11 and the cover 14. Furthermore, this internal space can be sealed in a vacuum or hermetically sealed state.

[0055] When viewed from above, the outer edge of package 10 is rectangular. This rectangle can be a rectangle with a long side and a short side. In the illustrated package 10, the long side of the rectangle is in the same direction as the X direction, and the short side is in the same direction as the Y direction. It should be noted that, when viewed from above, the outer edge shape of package 10 may not be rectangular.

[0056] In the package 10, an internal space is formed for configuring other constituent elements. The first upper surface 11A of the package 10 is part of the area defining the internal space. In addition, each inner surface 11E and the lower surface 14B of the package 10 is part of the area defining the internal space.

[0057] The substrate 11 has a first upper surface 11A and a lower surface 11B. The substrate 11 has a second upper surface 11C. The substrate 11 has one or more outer surfaces 11D. The substrate 11 has one or more inner surfaces 11E. One or more outer surfaces 11D intersect with the second upper surface 11C. One or more outer surfaces 11D intersect with the lower surface 11B. One or more inner surfaces 11E intersect with the second upper surface 11C.

[0058] Viewed from above, the outer edge of the substrate 11 is rectangular. Viewed from above, the outer edge of the substrate 11 is the same as the outer edge of the package 10. Viewed from above, the outer edge of the first upper surface 11A is rectangular. This rectangle can be a rectangle with a long side and a short side. The direction of the long side of the first upper surface 11A is parallel to the direction of the long side of the outer edge of the substrate 11. It should be noted that, viewed from above, the outer edge of the first upper surface 11A may not be rectangular.

[0059] When viewed from above, the first upper surface 11A is surrounded by the second upper surface 11C. The second upper surface 11C is an annular surface that surrounds the first upper surface 11A when viewed from above. The second upper surface 11C is a rectangular annular surface. Here, the frame defined by the inner edge of the second upper surface 11C is referred to as the inner frame of the second upper surface 11C, and the frame defined by the outer edge of the second upper surface 11C is referred to as the outer frame of the second upper surface 11C.

[0060] The substrate 11 has a recess surrounded by a frame formed by a second upper surface 11C. The recess defines a portion in the substrate 11 that is recessed downwards from the second upper surface 11C. A first upper surface 11A is part of the recess. One or more inner side surfaces 11E are part of the recess. The second upper surface 11C is located above the first upper surface 11A.

[0061] The base 11 has one or more stepped portions 11F. Each stepped portion 11F has an upper surface 11G and a side surface 11H that intersects with and extends downward from the upper surface 11G. Here, a stepped portion 11F has only one upper surface 11G and one side surface 11H. The upper surface 11G intersects with the inner side surface 11E. The side surface 11H intersects with the first upper surface 11A.

[0062] One or more step portions 11F are disposed inside the inner frame of the second upper surface 11C when viewed from above. One or more step portions 11F are formed along part or all of the inner side surface 11E when viewed from above. In the base 11, the side surface 11H is the inner side surface, but the side surface 11H and the inner side surface 11E are different surfaces. One or more inner side surfaces 11E and one or more side surfaces 11H are perpendicular to the first upper surface 11A. The perpendicularity here is allowed to be ±3 degrees.

[0063] One or more step portions 11F may include a first step portion 11F1 and a second step portion 11F2. The first step portion 11F1 and the second step portion 11F2 are configured to face each other on their respective side surfaces 11H. The first step portion 11F1 and the second step portion 11F2 are disposed on the short side of the inner frame of the second upper surface 11C.

[0064] The substrate 11 has a base portion 11M and a frame portion 11N. The base portion 11M and the frame portion 11N can be components made of different materials. The substrate 11 can be configured to include a base component corresponding to the base portion 11M and a frame component corresponding to the frame portion 11N.

[0065] The base 11M includes a first upper surface 11A. The frame portion 11N includes a second upper surface 11C. The frame portion 11N includes one or more outer side surfaces 11D and one or more inner side surfaces 11E. The frame portion 11N includes one or more stepped portions 11F.

[0066] The lower surface of the base 11M constitutes part or all of the lower surface 11B of the base 11. When the lower surface of the base 11M constitutes part of the lower surface 11B of the base 11, the lower surface of the frame portion 11N constitutes the remaining area of ​​the lower surface 11B of the base.

[0067] The substrate 11 has a plurality of wiring portions 12A. The plurality of wiring portions 12A include one or more inner wiring portions 12A1 disposed in the internal space of the package 10 and one or more outer wiring portions 12A2 disposed on the outer surface of the package 10.

[0068] One or more inner wiring portions 12A1 are provided on the upper surface 11G of the stepped portion 11F. The base 11 has one or more inner wiring portions 12A1 provided on the upper surface 11G of the first stepped portion 11F1. The base 11 has one or more inner wiring portions 12A1 provided on the upper surface 11G of the second stepped portion 11F2.

[0069] One or more outer wiring portions 12A2 are disposed on the lower surface 11B of the package 10. One or more outer wiring portions 12A2 are disposed on the lower surface of the frame portion 11N. It should be noted that the outer wiring portions 12A2 may also be disposed on an outer surface of the package 10 that is different from the lower surface 11B.

[0070] In the substrate 11, when viewed from above, when the substrate 11 is divided into two regions by an imaginary line passing through and parallel to the side surface 11H of the first step portion 11F1, the region including the upper surface 11G of the first step portion 11F1 has one or more outer wiring portions 12A2 provided on the lower surface 11B of the substrate 11.

[0071] In the substrate 11, when viewed from above, when the substrate 11 is divided into two regions by an imaginary line passing through and parallel to the side surface 11H of the second step portion 11F2, the region containing the upper surface 11G of the second step portion 11F2 has one or more outer wiring portions 12A2 provided on the lower surface 11B of the substrate 11.

[0072] In the substrate 11, one or more inner wiring sections 12A1 are electrically connected to outer wiring sections 12A2. One or more inner wiring sections 12A1 are electrically connected to different outer wiring sections 12A2.

[0073] The substrate 11 has a bonding pattern 13A. The bonding pattern 13A is disposed on the second upper surface 11C. The bonding pattern 13A is arranged in a ring shape. The bonding pattern 13A is arranged in a rectangular ring shape. In a top view, the first upper surface 11A is surrounded by the bonding pattern 13A.

[0074] Mark 13B is applied to the substrate 11. Mark 13B is applied to the lower surface 11B. Mark 13B is located on the lower surface of the base 11M. Mark 13B is located in a portion of the lower surface 11B of the base 11M, namely the marking region R1. It should be noted that the marking region R1 is the smallest rectangular area containing the mark 13B. Each side of the rectangle that forms the shape of the marking region R1 is parallel to either the short side direction or the long side direction of the substrate 11.

[0075] In the short-side direction, the midpoint of the width of the marking region R1 does not overlap with the midpoint of the width of the lower surface of the base 11M. In the short-side direction, the midpoint of the width of the lower surface of the base 11M is not between the two ends of the marking region R1. The center of the lower surface of the base 11M is not contained within the marking region R1.

[0076] In the short-side direction, the distance from one end of the lower surface of the base 11M to the marking area R1 is smaller than the width of the marking area R1, and the distance from the other end to the marking area R1 is larger than the width of the marking area R1. The distance from this end to the marking area R1 can be 3.0 mm or more.

[0077] In the long side direction, the midpoint of the width of the lower surface of the base 11M is located between the two ends of the marking region R1. In the long side direction, the midpoint of the width of the marking region R1 overlaps with the midpoint of the width of the lower surface of the base 11M.

[0078] The area of ​​the marked region R1 can be 1.0 mm. 2 Above and 2.5mm 2 The area of ​​the marked region R1 in the lower surface area of ​​the base 11M is less than 10%.

[0079] Marker 13B represents information composed of a suitable combination of text, numbers, symbols, etc. Marker 13B can be marked as coded information. Coded information can be, for example, using existing QR codes. It should be noted that Marker 13B can also be marked without being coded.

[0080] For example, label 13B is described as information for managing the substrate 11 in batch production. It should be noted that this is not limited to information capable of managing each substrate 11 individually, but can also include information capable of managing multiple substrates 11. The management information described in label 13B can be used for quality management of the substrate 11, manufacturing management of products using the substrate 11, product tracking, etc. The management information recorded in label 13B may include, for example, one or more of the following: manufacturing batch information, substrate identification information, and assembly substrate information. Manufacturing batch information refers to information that can determine the manufacturing batch when the substrate 11 is manufactured. Substrate identification information refers to information that can identify each individual substrate 11. Assembly substrate information refers to information that can identify the assembly substrate when multiple substrates 11 are connected as a single assembly substrate.

[0081] The substrate 11 can be formed, for example, using ceramic as the main material. Examples of ceramics that can be used as the main material of the substrate 11 include aluminum nitride, silicon nitride, aluminum oxide, or silicon carbide.

[0082] Here, the main material refers to the material that constitutes the largest proportion of the mass or volume in the formed object. It should be noted that when an object is formed from a single material, that material is the main material. That is, when a material is the main material, its proportion can be 100%.

[0083] The substrate 11 can also be formed using base components and frame components made from different main materials. For example, the base component can be formed using a metal or a metal-containing composite, graphite, diamond, or other materials with excellent heat dissipation as the main material. Examples of metals that can be used as the main material of the base component include copper, aluminum, or iron. Examples of composites containing a metal that can be used as the main material of the base component include copper-molybdenum or copper-tungsten. For example, the frame component can be formed using ceramics, which are listed as main materials of the substrate 11 above, as the main material.

[0084] To achieve excellent heat dissipation in the substrate 11, the main material of the base component is preferably a material with a higher thermal conductivity than that of the frame component. From this perspective, based on its relationship with the frame component, the base component can be referred to as a heat dissipation component. The main material of the frame component can be an insulating material.

[0085] The wiring section 12A can be formed using a metallic material as the main material, for example. Examples of metallic materials that can serve as the main material for the wiring section 12A include single metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, and W, or alloys containing these metals. The wiring section 12A can be composed of one or more metal layers, for example.

[0086] The bonding pattern 13A can be formed, for example, using a metallic material as the main material. Examples of metallic materials that can serve as the main material of the bonding pattern 13A include single metals such as Cu, Ag, Ni, Au, Sn, Ti, and Pd, or alloys containing these metals. The bonding pattern 13A can be composed of one or more metallic layers.

[0087] The marking 13B can be formed using known techniques. For example, the marking 13B can be applied to the surface of the base 11M, which is mainly made of metal, by laser printing.

[0088] The cover 14 has an upper surface 14A and a lower surface 14B. Additionally, the cover 14 has one or more side surfaces 14C. The cover 14 is constructed in the shape of a rectangular parallelepiped. It should be noted that the shape of the cover 14 may not be a rectangular parallelepiped.

[0089] The cover 14 is joined to the base 11. The lower surface 14B of the cover 14 is joined to the second upper surface 11C of the base 11. The cover 14 is joined to the base 11 by the joining pattern 13A. The cover 14 is joined to the base 11 by an adhesive.

[0090] The cover 14 is translucent, allowing light to pass through. Here, translucency refers to a transmittance of 80% or more for light incident on the cover 14. It should be noted that the cover 14 may also have some opaque areas (areas without light transmission).

[0091] The cover 14 can be formed, for example, using glass as the main material. Alternatively, the cover 14 can be formed, for example, using sapphire as the main material.

[0092] It should be noted that the cover 14, which is integral with the frame portion 11N, can also be joined with a flat base 11M to form a package 10. In this case, an opening is provided in the vertical direction on the inner side of the inner frame defined by the inner edge of the lower surface of the frame portion 11N, extending from the lower surface of the frame portion 11N to the lower surface 14B of the cover 14. When viewed from above, the base 11M is joined to the frame portion 11N to block this opening. In this case, the base 11 can become the package 10. The base 11 for the package 10 can be either part of the package 10 or the package 10 itself.

[0093] (Semiconductor laser element 20)

[0094] The semiconductor laser element 20 has an upper surface 21A, a lower surface 21B, and multiple side surfaces 21C. The upper surface 21A is rectangular with long and short sides. The shape of the semiconductor laser element 20 when viewed from above is also rectangular with long and short sides. It should be noted that the shape of the upper surface 21A and the shape of the semiconductor laser element 20 when viewed from above are not limited to these.

[0095] The semiconductor laser element 20 has a light emitting surface 22. For example, the side surface 21C can serve as the light emitting surface 22. The side surface 21C that serves as the light emitting surface 22 intersects with the short side of the upper surface 21A. Alternatively, for example, the upper surface 21A can serve as the light emitting surface 22.

[0096] The semiconductor laser element 20 can be a single-emitter semiconductor laser element consisting of one emitter. Alternatively, the semiconductor laser element 20 can be a multi-emitter semiconductor laser element consisting of multiple emitters.

[0097] The semiconductor laser element 20 can, for example, be a semiconductor laser element that emits blue light. Alternatively, for example, the semiconductor laser element 20 can be a semiconductor laser element that emits green light. Furthermore, for example, the semiconductor laser element 20 can be a semiconductor laser element that emits red light. It should be noted that the semiconductor laser element 20 can also be a semiconductor laser element that emits light of other colors or wavelengths.

[0098] Here, blue light refers to light with a peak emission wavelength in the range of 420nm to 494nm. Green light refers to light with a peak emission wavelength in the range of 495nm to 570nm. Red light refers to light with a peak emission wavelength in the range of 605nm to 750nm.

[0099] Semiconductor laser elements 20 that emit blue or green light can include those comprising nitride semiconductors. Examples of GaN-based semiconductors include GaN, InGaN, and AlGaN. Semiconductor laser elements 20 that emit red light can include those comprising InAlGaP, GaInP, and GaAs-based semiconductors such as GaAs and AlGaAs.

[0100] Semiconductor laser element 20 emits directional laser light. Diverging light is emitted from the light emitting surface 22 (emission end face) of semiconductor laser element 20. The light emitted from semiconductor laser element 20 forms an elliptical far-field pattern (hereinafter referred to as "FFP") in a plane parallel to the light emitting surface 22. FFP is the shape and intensity distribution of the emitted light at a position away from the light emitting surface of semiconductor laser element.

[0101] Here, light passing through the center of the elliptical shape of the FFP, in other words, light with peak intensity in the FFP's intensity distribution, is referred to as light traveling along the optical axis or light passing through the optical axis. Furthermore, in the intensity distribution of the FFP, light with a peak intensity value of 1 / e... 2 Light of the above intensities is called the primary component of light.

[0102] The shape of the FFP (Factor-Free Plane) emitted from the semiconductor laser element 20 is an ellipse in a plane parallel to the light-emitting surface 22, where the stacking direction is longer than the direction perpendicular to the stacking direction. The stacking direction refers to the direction in which multiple semiconductor layers containing the active layer are stacked in the semiconductor laser element 20. The direction perpendicular to the stacking direction can also be called the planar direction of the semiconductor layer. Alternatively, the major axis of the elliptical shape of the FFP can be called the fast axis direction of the semiconductor laser element 20, and the minor axis direction can be called the slow axis direction of the semiconductor laser element 20.

[0103] Based on the light intensity distribution of FFP, 1 / e of the peak light intensity 2 The light spread angle of the semiconductor laser element 20 is defined as the light spread angle of the peak light intensity (the light passing through the optical axis) and 1 / e of the peak light intensity. 2 The angle formed by the light intensity is represented by the light beam. It should be noted that the light spread angle is different from 1 / e of the peak light intensity. 2In addition to the light intensity, it is sometimes calculated from, for example, the light intensity at half the peak light intensity. In this specification, when simply referred to as the "light diffusion angle," it refers to 1 / e of the peak light intensity. 2 The diffusion angle of light at a given light intensity.

[0104] The spread angle of the light emitted from the semiconductor laser element 20 along the fast axis can be greater than 30 degrees and less than 70 degrees. Furthermore, the spread angle of the light along the slow axis can exceed 0 degrees and be less than 20 degrees. Additionally, the spread angle along the fast axis is larger than the spread angle along the slow axis.

[0105] (Auxiliary mounting base 30)

[0106] The auxiliary mounting base 30 has an upper surface 31A, a lower surface 31B, and one or more side surfaces 31C. The upper surface 31A can be considered a mounting surface for mounting other components. The upper surface 31A is rectangular in shape. This rectangle of the upper surface 31A may have a short side and a long side. It should be noted that the shape of the upper surface 31A may not be rectangular.

[0107] The auxiliary mounting base 30, viewed from above, has a rectangular shape. This rectangle of the auxiliary mounting base 30 may have a short side and a long side. It should be noted that the shape of the auxiliary mounting base 30, viewed from above, may not be rectangular. In a top view, the auxiliary mounting base 30 may have a shape in which the length in one direction (hereinafter referred to as the short side direction of the auxiliary mounting base 30) is smaller than the length in the direction perpendicular to it (hereinafter referred to as the long side direction of the auxiliary mounting base 30). In the illustrated auxiliary mounting base 30, the short side direction is the same as the X direction, and the long side direction is the same as the Y direction.

[0108] The auxiliary mounting base 30 can be configured to have a substrate 32A and an upper metal component 32B. Alternatively, the auxiliary mounting base 30 can also be configured to have a lower metal component 32C. The upper metal component 32B is disposed on the upper surface of the substrate 32A. The lower metal component 32C is disposed on the lower surface of the substrate 32A. The auxiliary mounting base 30 also includes a wiring layer 33. The wiring layer 33 is disposed on the upper metal component 32B.

[0109] The substrate 32A is insulating. The substrate 32A is formed, for example, from silicon nitride, aluminum nitride, or silicon carbide. The main material of the substrate 32A can be a ceramic with good heat dissipation (high thermal conductivity).

[0110] The upper metal component 32B is primarily made of metals such as copper and aluminum. The upper metal component 32B has one or more metal layers. The upper metal component 32B may have multiple metal layers, each primarily made of a different metal.

[0111] The lower metal component 32C is primarily made of metals such as copper and aluminum. The lower metal component 32C has one or more metal layers. The lower metal component 32C may have multiple metal layers, each primarily made of a different metal.

[0112] The wiring layer 33 can be formed using metal. For example, the wiring layer 33 can be formed using AuSn solder (AuSn metal layer).

[0113] For example, the length of the auxiliary mounting base 30 in the short-length direction or short-side direction is 750 μm or more and 850 μm or less. Furthermore, the length of the auxiliary mounting base 30 in the long-length direction or long-side direction is 1900 μm or more and 2700 μm or less. Additionally, the difference between the length of the auxiliary mounting base 30 in the long-side direction and the length in the short-side direction is 1150 μm or more and 1950 μm or less.

[0114] For example, the thickness of the auxiliary mounting base 30 (width in the direction perpendicular to the upper surface 31A) is 250 μm or more and 350 μm or less. Additionally, for example, the thickness of the substrate 32A is 150 μm or more and 250 μm or less. Additionally, for example, the thickness of the upper metal member 32B is 35 μm or more and 65 μm or less. Additionally, for example, the thickness of the lower metal member 32C is 35 μm or more and 65 μm or less. Additionally, for example, the thickness of the wiring layer 33 is 1.0 μm or more and 5.0 μm or less.

[0115] (Reflective component 40)

[0116] The reflecting component 40 has a lower surface 41A and a light-reflecting surface 41B. Furthermore, the light-reflecting surface 41B is inclined relative to the lower surface 41A. The straight line connecting the lower and upper ends of the light-reflecting surface 41B is inclined relative to the lower surface 41A. The angle at which the light-reflecting surface 41B is inclined relative to the lower surface 41A is called the tilt angle of the light-reflecting surface 41B.

[0117] The light-reflecting surface 41B is a plane. It should be noted that the light-reflecting surface 41B can also be a curved surface. The tilt angle of the light-reflecting surface 41B is 45 degrees. It should be noted that the tilt angle of the light-reflecting surface 41B can also be other than 45 degrees.

[0118] The main material of the reflective component 40 can be glass, metal, etc. Heat-resistant materials can be used as the main material of the reflective component 40. Examples of main materials include quartz or BK7 (borosilicate glass) glass, and metals such as Al. The reflective component 40 can also be formed using Si as the main material.

[0119] If the main material is a reflective material such as Al, the light-reflecting surface 41B can be formed from the main material. Alternatively, instead of forming the light-reflecting surface 41B from the main material, the main material can be used to form the approximate shape of the reflective component 40, and the light-reflecting surface 41B can be formed on the surface of the approximate shape. In this case, the light-reflecting surface 41B can be formed, for example, using a metal layer such as Ag or Al, or a dielectric multilayer film such as Ta2O5 / SiO2, TiO2 / SiO2, or Nb2O5 / SiO2.

[0120] The reflectivity of the light reflecting surface 41B relative to the peak wavelength of the light incident on it is 90% or more. Alternatively, this reflectivity may be 95% or more. Furthermore, the reflectivity may be 99% or more. The reflectivity may be 100% or less.

[0121] (Protective Component 50)

[0122] The protective element 50 has an upper surface, a lower surface, and one or more side surfaces. The protective element 50 is rectangular in shape. It should be noted that the protective element 50 may not be rectangular in shape.

[0123] The protection element 50 is used to prevent excessive current from flowing through a specific component (such as a semiconductor laser component) and causing damage. A Zener diode can be used as an example of the protection element 50. Furthermore, a Zener diode formed of Si can be employed as the Zener diode.

[0124] (Wiring 60)

[0125] Wiring 60 is a linear conductive material with its two ends serving as joints. The joints at both ends become joints with other components. Wiring 60 is used for electrical connection between two components. Wiring 60 is, for example, a metallic conductor. Metals such as gold, aluminum, silver, and copper can be used.

[0126] (Optical component 70)

[0127] The optical component 70 has an upper surface 71A, a lower surface 71B, and one or more side surfaces 71C. The optical component 70 imparts optical effects to light incident upon it. The optical effects imparted to light by the optical component 70 include, for example, focusing, collimation, diffusion, polarization, diffraction, wave combining, light guiding, reflection, and wavelength conversion.

[0128] The optical component 70 has an optically active surface that imparts optical effects. The upper surface 71A, lower surface 71B, or side surface 71C can serve as the optically active surface. Alternatively, the optically active surface can be located at a different position than the upper surface 71A, lower surface 71B, and side surface 71C. For example, the optically active surface can also be formed internally, rather than on the surface of the optical component 70.

[0129] Optical component 70 may have one or more lens surfaces 71D. Lens surface 71D is the optical working surface of optical component 70. It should be noted that optical component 70 with lens surface 71D can also be referred to as a lens component. Light emitted from optical component 70 through lens surface 71D is given the optical function of focusing, diffusing, or collimating by optical component 70. For example, optical component 70 is a collimating lens that causes light entering optical component 70 to be collimated and emitted outwards.

[0130] One or more lens surfaces 71D are disposed on the upper surface 71A side. It should be noted that the lens surface 71D can also be disposed on the lower surface 71B side. The upper surface 71A and the lower surface 71B are planes. One or more lens surfaces 71D intersect with the upper surface 71A. When viewed from above, one or more lens surfaces 71D are surrounded by the upper surface 71A.

[0131] When viewed from above, the optical component 70 has a rectangular shape. It should be noted that the shape of the optical component 70 when viewed from above may not be rectangular. The lower surface 71B is flat. No lens surface 71D is formed on the lower surface 71B side of the optical component 70. The lower surface 71B has a rectangular shape. It should be noted that the shape of the lower surface 71B may not be rectangular.

[0132] In the optical component 70, the portion that overlaps with the lens surface 71D when viewed from above is designated as a lens portion 72A. In the optical component 70, the portion that overlaps with the upper surface 71A when viewed from above is designated as a non-lens portion 72B. The lower surface 71B has a region that constitutes the lower surface of one or more lens portions 72A and a region that constitutes the lower surface of the non-lens portion 72B.

[0133] The optical component 70 may have a plurality of lens surfaces 71D continuously formed in one direction. When viewed from above, the direction in which the plurality of lens surfaces 71D are arranged is called the connecting direction of the lenses. In the illustrated optical component 70, the connecting direction is the same as the X-direction.

[0134] Multiple lens surfaces 71D are formed such that the vertices of each lens surface 71D are aligned on a straight line. This imaginary straight line connecting the vertices is parallel to the lower surface 71B of the optical component 70. It should be noted that this parallelism includes a difference within ±5 degrees.

[0135] Some or all of the multiple lens surfaces 71D, and more than two lens surfaces 71D, can have the same curvature. All of the multiple lens surfaces 71D can have the same curvature.

[0136] The optical component 70 is transparent. The transmittance of the optical component 70 relative to the peak wavelength of light incident on it is 80% or more. The optical component 70 may also have transparent areas and opaque areas (hereinafter referred to as opaque areas). In the opaque areas, the transmittance relative to the peak wavelength of light incident on the optical component 70 is 50% or less. The optical component 70 can be formed using, for example, glass such as BK7.

[0137] (Light-emitting device 1)

[0138] In the light-emitting device 1, one or more semiconductor laser elements 20 are disposed within the internal space of the package 10. One or more semiconductor laser elements 20 are disposed on the substrate 11. One or more semiconductor laser elements 20 are disposed on the first upper surface 11A. By disposing of one or more semiconductor laser elements 20 on the upper surface side, a mark 13B is located on the back side of the surface where the semiconductor laser elements 20 are disposed.

[0139] One or more semiconductor laser elements 20 include at least a first semiconductor laser element 20A. The one or more semiconductor laser elements 20 can be composed of a plurality of semiconductor laser elements 20 including the first semiconductor laser element 20A.

[0140] One or more semiconductor laser elements 20 emit light from the light-emitting point of the light-emitting surface 22 in a first direction. In the illustrated light-emitting device 1, the first direction is the same as the positive Y direction. It should be noted that the first direction can also be defined by a direction other than the positive Y direction, instead of the direction of light emission from the light-emitting point of the light-emitting surface 22.

[0141] Viewed from above, an imaginary straight line L1 parallel to the first direction passes through the first semiconductor laser element 20A. Viewed from above, the imaginary straight line L1 can pass through the side surface 21C of the first semiconductor laser element 20A, i.e., the light emitting surface 22. Viewed from above, the imaginary straight line L1 can pass through the side surface 21C of the first semiconductor laser element 20A opposite to the light emitting surface 22. Viewed from above, the imaginary straight line L1 also passes through the marked area R1. The imaginary straight line L1 can be a straight line parallel to the short side of the lower surface of the base 11M.

[0142] In the light-emitting device 1, when viewed from above, a plurality of semiconductor laser elements 20 can be arranged in a second direction perpendicular to the first direction. When viewed from above, the plurality of semiconductor laser elements 20 are positioned at a location traversed by an imaginary straight line L2 that passes through the midpoint of the width in the first direction on the lower surface of the base 11M and is parallel to the second direction perpendicular to the first direction.

[0143] The plurality of semiconductor laser elements 20 can be composed of three or more semiconductor laser elements 20 arranged in a second direction, wherein the first semiconductor laser element 20A is not equivalent to any one of the semiconductor laser elements 20 located at both ends of the arrangement. The first semiconductor laser element 20A is disposed at a position sandwiched between the semiconductor laser elements 20 at both ends.

[0144] In the first direction, when viewed from above, the midpoint of the width of the marking region R1 is not located between the two ends of the first semiconductor laser element 20A. By configuring the marking region R1 in this way in relation to the position of the first semiconductor laser element 20A, the adverse effects of the marking 13B on the heat dissipation of heat generated from the first semiconductor laser element 20A, which is a heat source, can be reduced.

[0145] In the first direction, the midpoint of the width of the lower surface of the base 11M is located between the two ends of the first semiconductor laser element 20A. By configuring the first semiconductor laser element 20A in this way, heat generated from the first semiconductor laser element 20A can easily diffuse towards the plane direction (XY plane direction) of the base 11M, thereby improving heat dissipation relative to the first semiconductor laser element 20A. It should be noted that one end of these two ends is located on the light emitting surface 22, and the other end is located on the opposite surface of the light emitting surface.

[0146] The marked area R1 partially overlaps with the first semiconductor laser element 20A when viewed from above. When viewed from above, a portion of the mark 13B can overlap with a portion of the first semiconductor laser element 20A. When viewed from above, the marked area R1 can overlap with at least a portion of the light emitting surface 22 of the first semiconductor laser element 20A. By positioning the first semiconductor laser element 20A on the first upper surface 11A in this positional relationship, a balance between heat dissipation and miniaturization can be achieved.

[0147] That is, considering only the impact of the mark 13B on heat dissipation, the mark 13B that affects heat dissipation is preferably positioned in a location that does not overlap with one or more semiconductor laser elements 20 when viewed from above. On the other hand, if the mark area R1 is positioned in a location that does not overlap with the semiconductor laser element 20 when viewed from above, the upper and lower surfaces of the base 11M may become larger. It can be said that allowing partial overlap contributes to the miniaturization of the light-emitting device 1.

[0148] When viewed from above, the area of ​​the first semiconductor laser element 20A that does not overlap with the marking region R1 is larger than the area that overlaps with the marking region R1. It should be noted that this condition is also satisfied when the first semiconductor laser element 20A does not overlap with the marking region R1 when viewed from above. When viewed from above, the area of ​​the region where the first semiconductor laser element 20A overlaps with the marking region R1 can also be more than 0% and less than 50% of the area of ​​the first semiconductor laser element 20A. By configuring the first semiconductor laser element 20A in this way, the adverse effects of the marking 13B on heat dissipation can be reduced.

[0149] Among the plurality of semiconductor laser elements 20, there may be a second semiconductor laser element 20B that does not overlap with the marked region R1 when viewed from above. The second semiconductor laser element 20B can be any one of the two ends of the plurality of semiconductor laser elements 20 arranged along the second direction.

[0150] In the light-emitting device 1, one or more semiconductor laser elements 20 are disposed on the substrate 11 via one or more auxiliary mounting bases 30. One or more semiconductor laser elements 20 are disposed on one or more auxiliary mounting bases 30. A semiconductor laser element 20 can be disposed on one or each of the auxiliary mounting bases 30.

[0151] Viewed from above, one or more auxiliary mounting bases 30 have a larger area than the semiconductor laser element 20 disposed thereon. As a result, heat emitted from the semiconductor laser element 20 is diffused by the auxiliary mounting bases 30 and transferred to the first upper surface 11A, thus improving heat dissipation.

[0152] One or more auxiliary mounting bases 30 include a first auxiliary mounting base 30A for configuring a first semiconductor laser element 20A. In top view, an imaginary straight line L3 parallel to a first direction passes through the first auxiliary mounting base 30A and a marking region R1. In top view, the marking region R1 can partially overlap with the first auxiliary mounting base 30A.

[0153] Viewed from above, the light emitting surface 22 of the semiconductor laser element 20 is disposed near the side surface 31C of the auxiliary mounting base 30. In a first direction, the midpoint of the width of the first semiconductor laser element 20A is further away in the first direction than the midpoint of the width of the first auxiliary mounting base 30A.

[0154] In the second direction, the width of the marking area R1 is larger than the width of the first semiconductor laser element 20A. In the second direction, the width of the marking area R1 is larger than the width of the first auxiliary mounting base 30A. This improves visibility when the marking 13B is set to a certain size. The width of the marking area R1 in the first direction can be greater than the width of the first auxiliary mounting base 30A in the second direction.

[0155] One or more auxiliary mounting bases 30 can be constituted by a plurality of auxiliary mounting bases 30 arranged in a second direction. In the plurality of auxiliary mounting bases 30 arranged along the second direction, the spacing between adjacent auxiliary mounting bases 30 in the second direction can be 260 μm or less. Therefore, a larger number of auxiliary mounting bases 30 can be arranged. Furthermore, this spacing is smaller than the width of the marking area R1 in the second direction. Additionally, the width of the marking area R1 in the second direction is greater than the sum of this spacing and the width of the first auxiliary mounting base 30A in the second direction.

[0156] Viewed from above, the imaginary straight line L2 passes through multiple auxiliary mounting bases 30. Multiple line segments exist on the imaginary straight line L2 that do not overlap with the auxiliary mounting bases 30 but overlap with the first upper surface 11A. The line segments between adjacent auxiliary mounting bases and between the auxiliary mounting bases and the frame portion 11N are aligned. The width of the marked area R1 in the second direction is larger than any of the multiple line segments.

[0157] In the light-emitting device 1, one or more reflective elements 40 are disposed within the internal space of the package 10. One or more reflective elements 40 are disposed on the substrate 11. One or more reflective elements 40 are disposed on the first upper surface 11A. One or more reflective elements 40 are disposed at a position away from one or more semiconductor laser elements 20 in a first direction.

[0158] Light emitted from one or more semiconductor laser elements 20 is reflected by one or more reflective components 40. The direction of light travel is changed by the light-reflecting surface 41B of one or more reflective components 40. Light emitted from one or more semiconductor laser elements 20 is emitted upwards from the upper surface 14A of the package 10. In the illustrated light-emitting device 1, light traveling in the positive Y direction is reflected by the light-reflecting surface 41B and travels in the positive Z direction.

[0159] One or more reflective components 40 include a first reflective component 40A that reflects light emitted from the first semiconductor laser element 20A. The first reflective component 40A is disposed on the substrate 11 at a position away from the first semiconductor laser element 20A along a first direction at a first distance. One or more reflective components 40 are disposed on the substrate 11M at a position away from the first semiconductor laser element 20A along the first direction at a first distance.

[0160] Viewed from above, in the first direction, the distance from the first semiconductor laser element 20A to the first reflective component 40A is greater than the distance from the first semiconductor laser element 20A to the mark 13B. It should be noted that this distance from the first semiconductor laser element 20A to the mark 13B can be defined as the distance from the first semiconductor laser element 20A to the marking region R1. Furthermore, when the first semiconductor laser element 20A overlaps with the marking region R1, it can be said that the distance from the first semiconductor laser element 20A to the mark 13B is zero.

[0161] When viewed from above, at least a portion of the first reflective component 40A overlaps with the marking region R1. When viewed from above, the area of ​​overlap between the first reflective component 40A and the marking region R1 is larger than the area of ​​overlap between the first semiconductor laser element 20A and the marking region R1. When viewed from above, the area of ​​overlap between the first reflective component 40A and the marking region R1 is larger than the area of ​​overlap between the first auxiliary mounting base 30A and the marking region R1. When viewed from above, the entire first reflective component 40A can overlap with the marking region R1.

[0162] The semiconductor laser element 20 or the auxiliary mounting base 30 serves to transfer heat emitted from the semiconductor laser element 20 to the base 11M. Additionally, the base 11M dissipates heat to the outside of the package 10. Therefore, positioning the marking area R1 at a position that minimizes overlap with the first auxiliary mounting base 30A is beneficial for the heat dissipation of the light-emitting device 1. In a top view, if most of the marking area R1 overlaps with the first reflective component 40A, the area that overlaps with the first auxiliary mounting base 30A is correspondingly reduced, thus improving heat dissipation.

[0163] If we only consider the relationship with the first semiconductor laser element 20A, it is preferable that the light emitting surface 22, where heat is most concentrated during operation, does not overlap with the marking area R1 when viewed from above. On the other hand, if the area overlapping with the first auxiliary mounting base 30A is increased instead of avoiding overlap with the light emitting surface 22 when viewed from above, the result may also be a deterioration in heat dissipation. From a heat dissipation point of view, it may sometimes be more ideal to avoid overlap with the first auxiliary mounting base 30A, even if the marking area R1 overlaps with the light emitting surface 22 when viewed from above. It should be noted that the factors considering the balance between overlap with the light emitting surface 22 and overlap with the first auxiliary mounting base 30A are not limited to the heat dissipation described herein, and this balance can also be considered from other factors.

[0164] From the perspective of heat dissipation, the reflective component 40 is not necessarily required in the arrangement of the marking region R1, as long as it is not an optical component of the semiconductor laser element. Therefore, in the light-emitting device 1, the reflective component 40 can be considered an example of an optical component. That is, when the first semiconductor laser element 20A is disposed on the base 11M, and the optical component is disposed on the base 11M at a position a first distance away from the first semiconductor laser element 20A along a first direction, the marking region R1 is disposed closer to the optical component than the semiconductor laser element 20 in the first direction, thereby improving the heat dissipation of heat generated from the first semiconductor laser element 20A. The optical component can be any component that imparts optical function to the light emitted from the semiconductor laser element 20; in addition to the reflective component 40, examples include lens components, wavelength plates, MEMS, etc. It should be noted that, from the perspective of the performance of the light-emitting device 1 (e.g., light output), it is preferable that the optical component here has a smaller impact on performance degradation caused by heat compared to the semiconductor laser element 20.

[0165] Viewed from above, in the first direction, the midpoint of the width of the marking region R1 is located at a position farther than a first distance from the light emitting surface 22 of the first semiconductor laser element 20A. This midpoint is located between the two ends of the first reflective member 40A in the first direction. By arranging the first semiconductor laser element 20A in this positional relationship, the impact of the marking 13B on heat dissipation can be reduced, thereby improving the heat dissipation of the light-emitting device 1.

[0166] In a top-view scenario, of the two outer surfaces 11D of the substrate 11 through which the imaginary straight line L1 passes, the outer surface 11D located on the side of the reflective component 40 is designated as the first outer surface 11D1, and the outer surface 11D located on the side of the semiconductor laser element is designated as the second outer surface 11D2. In the first direction, when viewed from above, the distance from the first outer surface 11D1 to the light emitting surface 22 of the first semiconductor laser element is smaller than the distance from the second outer surface 11D2 to the light emitting surface 22 of the first semiconductor laser element.

[0167] When starting from the light emitting surface 22, which becomes the point of heat generation, the area where the mark 13B is configured can be easily ensured on the second outer surface 11D2 side, which is easily away from the light emitting surface 22. However, in order not to hinder the heat dissipation from the semiconductor laser element 20 or the auxiliary mounting base 30 to the base 11M, the mark 13B is provided on the first outer surface 11D1 side.

[0168] It should be noted that as long as the distance between the first auxiliary mounting base 30A and the second outer side 11D2 is large when viewed from above, the mark 13B can also be set in the area between them. However, from the viewpoint of miniaturizing the light-emitting device 1, ensuring a wide distance in order to set the mark 13B may also be a disadvantage.

[0169] In the light-emitting device 1, one or more protective elements 50 are disposed within the internal space of the package 10. One or more protective elements 50 are disposed on the substrate 11. One or more protective elements 50 are disposed on the frame portion 11N. One or more protective elements 50 are disposed on the upper surface 11G of the stepped portion 11F. One or more protective elements 50 protect one or more semiconductor laser elements 20.

[0170] In the light-emitting device 1, multiple wirings 60 are used to electrically connect one or more semiconductor laser elements 20 to the package 10. The multiple wirings 60 electrically connect one or more semiconductor laser elements 20 to the wiring section 12A. The multiple wirings 60 include wirings 60 that engage with the inner wiring section 12A1. In the illustrated light-emitting device 1, one or more semiconductor laser elements 20 are electrically connected in series between the inner wiring section 12A1 provided in the first stepped section 11F1 and the inner wiring section 12A1 provided in the second stepped section 11F2.

[0171] In the light-emitting device 1, the optical component 70 is disposed above the package 10. The optical component 70 is bonded to the package 10. The upper surface 14A of the package 10 and the lower surface 71B of the optical component 70 are bonded by an adhesive. The adhesive can be, for example, an ultraviolet-curable resin.

[0172] Light emitted from the package 10 enters the optical component 70 and exits from the optical component 70. The light emitted from the optical component 70 is light that enters the optical working surface 71D and is endowed with optical effects. For example, diverging light emitted from the package 10 enters the optical component 70, which is a lens component, passes through the lens surface 71D, which is the optical working surface 71D, and becomes collimated light before exiting from the optical component 70.

[0173] The light emitted from the optical component 70 becomes the light emitted from the light-emitting device 1. It should be noted that, in the illustrated light-emitting device 1, for example, if the light-emitting device 1 does not have the optical component 70, it can be understood that the light emitted from the package 10 becomes the light emitted from the light-emitting device 1. That is, the light emitted from the light-emitting device 1 can be determined by its relationship with the constituent elements of the light-emitting device 1.

[0174] (Wireline board 101)

[0175] Wiring substrate 101 has an upper surface 101A, a lower surface 101B, and one or more side surfaces. Wiring substrate 101 has a plate-like shape. In top view, the outer edge of wiring substrate 101 is rectangular. This rectangle can be a rectangle with a long side and a short side. In the illustrated package 10, the short side of this rectangle is oriented in the same direction as the X-direction, and the long side is oriented in the same direction as the Y-direction.

[0176] The wiring board 101 has a heat dissipation section 101D, a wiring section 101E, and an insulation section 101F. The heat dissipation section 101D functions as a heat dissipation path for heat emitted from other components mounted on the wiring board 101. The wiring section 101E is electrically connected to the other components mounted on the wiring board 101.

[0177] The insulating portion 101F insulates the heat dissipation portion 101D from the wiring portion 101E. In the wiring board 101, the heat dissipation portion 101D and the wiring portion 101E are not electrically connected. Alternatively, it may be provided to protect a portion of the wiring portion 101E from contact with other components.

[0178] Here, on the upper surface 101A of the wiring board 101, the area where the heat dissipation part 101D is located at the top of the heat dissipation part 101D, the wiring part 101E and the insulation part 101F are designated as the upper surface 101A of the heat dissipation part 101D, the area where the wiring part 101E is located at the top of the wiring part 101E, and the area where the insulation part 101F is located at the top of the insulation part 101F are designated as the upper surface 101A of the insulation part 101F.

[0179] The wiring board 101 includes a heat dissipation component 111, a plurality of conductive components 121, and one or more insulating components 131. The heat dissipation section 101D may be composed of the heat dissipation component 111. The wiring section 101E may be composed of a plurality of conductive components 121. The insulating section 101F may be composed of one or more insulating components 131.

[0180] One or more through holes 101H are provided on the wiring board 101. The one or more through holes 101H include through holes 101H for fixing the wiring board 101 to other components (constituents). For example, a screw is inserted into the through hole 101H to fix the wiring board 101 to the other component. The one or more through holes 101H include through holes 101H for determining the position when the wiring board 101 is fixed to the other component.

[0181] The heat dissipation component 111 has a first upper surface 111A. The heat dissipation component 111 has a second upper surface 111B located at a lower position than the first upper surface 111A. The heat dissipation component 111 has a protrusion projecting from the second upper surface 111B, and the first upper surface 111A can serve as the upper surface of the protrusion. The height of the protrusion of the heat dissipation component 111 (the height from the second upper surface 111B to the first upper surface 111A) is smaller than the height from the lower surface of the heat dissipation component 111 to the second upper surface 111B.

[0182] One or more insulating components 131 are disposed on the heat dissipation component 111. One or more insulating components 131 are disposed on the second upper surface 111B. A plurality of conductive components 121 are disposed on the second upper surface 111B via the insulating components 131. The plurality of conductive components 121 are separated from each other and are not electrically connected.

[0183] One or more insulating components 131 are disposed between the heat dissipation component 111 and each conductive component 121. In a top view, the one or more insulating components 131 are partially disposed above the conductive components 121. Through the insulating components 131, a connected conductive component 121 appears to be divided into multiple regions. Thus, a wiring pattern is formed on the upper surface 101A of the wiring board 101.

[0184] The main material of the heat dissipation component 111 can be a metallic material. For example, single metals such as Cu, Ag, Al, Ni, Rh, Au, Ti, Pt, Pd, Mo, Cr, and W, or alloys containing these metals, can be used as the main material of the heat dissipation component 111. The heat dissipation component 111 is preferably formed of a material with excellent heat dissipation properties. The heat dissipation component 111 may be formed containing more than 95% by mass of copper.

[0185] The main material of the conductive component 121 can be a metallic material. For example, individual metals such as Cu, Ag, Al, Ni, Rh, Au, Ti, Pt, Pd, Mo, Cr, and W, or alloys containing these metals, can be used as the main material of the conductive component 121.

[0186] The insulating component 131 is formed of an insulating material. For example, polyimide can be used as the main material of the insulating component 131. Alternatively, the insulating component 131 can be made of glass epoxy resin, liquid crystal polymer, or the like, by impregnating one or more sheets of glass cloth with a thermosetting insulating resin such as epoxy resin and then curing the thermosetting insulating resin. The insulating portion 101F can be formed using multiple insulating components 131 formed of different main materials. For example, a film-like polyimide can be used as one of the insulating components 131, and a solder resist or other etching agent can be used as the other insulating components 131.

[0187] (Connector 201)

[0188] Connector 201 has an insertion port for inserting connector cables.

[0189] (Thermistor 301)

[0190] Thermistor 301 can be used as a temperature measuring element.

[0191] Next, the light-emitting module 901 will be described.

[0192] (Light-emitting module 901)

[0193] In the light-emitting module 901, one or more light-emitting devices 1 are mounted on the wiring substrate 101. The one or more light-emitting devices 1 are disposed on the upper surface 101A of the wiring substrate 101. The lower surface 11B of the one or more light-emitting devices 1 is bonded to the wiring substrate 101 via a bonding material. The bonding material can be an adhesive containing metal. For example, AuSn solder can be used as the bonding material.

[0194] One or more light-emitting devices 1 have a wiring portion 12A (outer wiring portion 12A2) that is electrically connected to a wiring portion 101E of a wiring board 101. The lower surface of the base 11M of one or more light-emitting devices 1 is bonded to a heat dissipation portion 101D of the wiring board 101 via a bonding material. As a result, heat accumulated in the base 11M can be released to the heat dissipation portion 101D.

[0195] In this way, the wiring board 101 serves as a heat dissipation component that releases the heat generated by the light-emitting device 1. In addition, from the viewpoint of heat dissipation, the wiring board 101 does not necessarily have to be a wiring board with wiring portion 101E, as long as it is a heat dissipation component with heat dissipation portion 101D.

[0196] The area containing the marking region R1 on the lower surface of the base 11M is bonded to the wiring substrate 101 via a bonding material. In fact, the entire lower surface of the base 11M is bonded to the heat dissipation portion 101D via a bonding material.

[0197] Mark 13B is applied to the marked area R1, resulting in a significant difference in the bonding state of the bonding materials between the area with and without mark 13B. For example, by applying mark 13B, the proportion of voids per unit area may increase relatively. A higher proportion of voids negatively impacts heat dissipation.

[0198] In the light-emitting module 901, when viewed from above, the bonding material of the first portion P1, which overlaps with the marking region R1, may have a higher proportion of voids compared to the bonding material of the second portion P2, which does not overlap with the marking region R1 (the proportion of voids in the first portion P1 is greater than the proportion of voids in the second portion P2). Therefore, considering the positional relationship between the semiconductor laser element 20, which generates heat during operation, and the marking region R1, which affects heat dissipation, arranging the semiconductor laser element 20 on the base 11M is related to improving heat dissipation from heat sources such as the semiconductor laser element.

[0199] In the light-emitting module 901, when viewed from above, a portion of the first part P1 of the bonding material overlaps with the insulating portion 101F of the wiring substrate 101, and another portion overlaps with the heat dissipation portion 101D. Compared to the case where the bonding material in the area overlapping with the marking area R1 is only bonded to the heat dissipation portion 101D, by including the insulating portion 101F in a portion, the generation of large voids can be suppressed. Due to the relationship between the bonding material and the first part P1, the insulating portion 101F relative to the heat dissipation portion 101D can be referred to as a processed portion that suppresses the generation of large voids and improves heat dissipation.

[0200] In the light-emitting module 901, when viewed from above, the light-emitting surface 22 of the first semiconductor laser element 20A does not overlap with the insulating portion 101F. Furthermore, when viewed from above, the first semiconductor laser element 20A can be arranged in a manner that does not overlap with the insulating portion 101F. Considering its relationship with the insulating portion 101F (processed portion) of the wiring board 101, it is also preferable that a large portion of the mark 13B overlaps directly below the first semiconductor laser element 20A.

[0201] In the light-emitting module 901, when viewed from above, the side 31C of the first auxiliary mounting base 30A, which faces the same direction as the light emitting surface 22 of the first semiconductor laser element 20A, does not overlap with the insulating portion 101F.

[0202] In the light-emitting module 901, the bonding material of the first part P1 and the bonding material of the second part P2 are bonded to the lower surface of the base 11M. The factor that dominates the difference in the proportion of voids generated in the first part P1 and the second part P2 is the presence or absence of marking 13B. For example, in the manufacturing process of the light-emitting module 901, the first part P1 and the second part P2 are not distinguished and the bonding materials are cured separately, or different materials are used, etc.

[0203] In the light-emitting module 901, the same bonding material can be used for the bonding of the outer wiring portion 12A2 and the wiring portion 101E, as well as the bonding of the base portion 11M and the heat dissipation portion 101D. In addition, these bonding processes can be performed in one go.

[0204] One or more light-emitting devices 1 can be composed of multiple light-emitting devices 1, including a first light-emitting device 1A and a second light-emitting device 1B. In the example of the illustrated light-emitting module 901, the two light-emitting devices 1, the first light-emitting device 1A and the second light-emitting device 1B, are mounted on the wiring board 101. The two light-emitting devices 1 are arranged in a first direction.

[0205] In the light-emitting module 901, the first light-emitting device 1A and the second light-emitting device 1B are arranged with the same orientation and mounted on the wiring substrate 101. It should be noted that whether they are aligned with the same orientation can be determined by whether the relative positions of the marking areas R1 in the lower surface of the base 11M are the same. Alternatively, whether they are aligned with the same orientation can be determined based on the appearance of the light-emitting device 1 (e.g., the relative arrangement of the optical components 70 in the light-emitting device 1). Furthermore, whether they are aligned with the same orientation can also be determined based on the arrangement relationship between the semiconductor laser element 20 and the reflective component 40.

[0206] In the light-emitting device 1, the position of the marking region R1 is offset from the center of the lower surface 11B or the lower surface of the base 11M. Consequently, the first portion P1, whose heat dissipation performance may be worse than that of the second portion P2, is also offset from this center. For example, if the first light-emitting device 1A and the second light-emitting device 1B are arranged face-to-face with their reflective components 40 close together, their first portions P1 will be close to each other, potentially causing a reduction in synergistic heat dissipation. On the other hand, when the two light-emitting devices 1 are arranged such that their semiconductor laser elements 20 are close to each other, the emission positions of the light from each light-emitting device 1 are separated.

[0207] In this way, when the two light-emitting devices 1 of the base 11M, which has the marking area R1 located off-center, are arranged close together, the overall heat dissipation of the light-emitting module 901 can be improved by arranging the two light-emitting devices 1 in the same orientation.

[0208] In the light-emitting module 901, a connector 201 is mounted on the wiring board 101. The connector 201 engages with the wiring section 101E and is electrically connected to one or more light-emitting devices 1. Thus, wiring connected to an external power source can be connected to the connector to supply power to the light-emitting device 1.

[0209] In the light-emitting module 901, a thermistor 301 is mounted on the wiring board 101. The thermistor 301 is disposed near one or more light-emitting devices 1. Thus, the heating state of the light-emitting device 1 driven by the semiconductor laser element 20 can be determined based on the electrical signal from the thermistor 301.

[0210] The light-emitting module 901 can be manufactured by a manufacturing method that includes a process of preparing a wiring substrate 101, a process of preparing one or more light-emitting devices 1, and a process of mounting one or more light-emitting devices 1 onto the wiring substrate 101. In addition, the method may include a process of mounting a connector 201 onto the wiring substrate 101, and may include a process of mounting a thermistor 301 onto the wiring substrate 101.

[0211] The manufacturing method of the light-emitting device 1 can be understood from the already described content. However, from the viewpoint of heat dissipation, any light-emitting device 1 manufactured by a method that includes the steps of preparing a base 11M on which at least the mark 13B is applied and the steps of arranging one or more semiconductor laser elements 20, including the first semiconductor laser element 20A, on the base 11M is acceptable. Furthermore, the light-emitting device 1 may also be manufactured by a step that includes arranging optical components such as a reflective member 40 on the base 11M. In addition, it is obvious that steps that include mounting other components of the light-emitting device 1 may also be included.

[0212] The process of mounting one or more light-emitting devices 1 onto the wiring substrate 101 includes a process of bonding one or more light-emitting devices 1 to the wiring substrate 101 via a bonding material. Additionally, it may include a process of obtaining management information from a mark 13B applied to one or each of the light-emitting devices 1.

[0213] The process of obtaining management information from the mark 13B applied to one or more light-emitting devices 1 is performed in the process of preparing one or more light-emitting devices 1, or in the process of mounting one or more light-emitting devices 1 onto the wiring board 101. The management information obtained in this process can be used, for example, for the management of the manufacturing process of the light-emitting module 901. In addition, it can be used, for example, for quantity management of the light-emitting modules 901. The manufacturer may appropriately determine how to use the management information.

[0214] The various embodiments of the present invention have been described above, but the light-emitting module of the present invention is not strictly limited to the light-emitting modules of each embodiment. That is, the present invention is not limited to the shape and structure of the light-emitting module disclosed in each embodiment. The present invention does not necessarily have to have all the constituent elements to be applied. For example, if a part of the constituent elements of the light-emitting module disclosed in the embodiments is not described in the claims, the degree of design freedom of those skilled in the art is recognized for that part of the constituent elements, such as substitution, omission, shape modification, material change, etc., and the invention described in the claims is specifically applied on this basis.

[0215] Based on what has been described so far in this specification, the following technical matters have been disclosed.

[0216] (Item 1)

[0217] A light-emitting module, wherein:

[0218] The base has an upper surface and a lower surface, and a mark is provided on a portion of the lower surface, i.e., the marking area;

[0219] One or more semiconductor laser elements are disposed on the upper surface of the base, including a first semiconductor laser element that emits light from a light-emitting point on a light-emitting surface in a first direction;

[0220] A heat dissipation substrate having a heat dissipation portion bonded to the lower surface of the base via a bonding material.

[0221] The area of ​​the lower surface including the marked region is bonded to the heat dissipation substrate via the bonding material.

[0222] In the first direction, when viewed from above, the midpoint of the width of the marked area is not located between the two ends of the first semiconductor laser element.

[0223] When viewed from above, a first imaginary straight line parallel to the first direction passes through the marked area and the first semiconductor laser element.

[0224] (Item 2)

[0225] According to the light-emitting module described in item 1, wherein,

[0226] In the first direction, the midpoint of the width of the marked area does not overlap with the midpoint of the width of the lower surface of the base.

[0227] (Item 3)

[0228] According to item 1 or 2, the light-emitting module, wherein,

[0229] In the first direction, the midpoint of the width of the lower surface of the base is located between the two ends of the first semiconductor laser element.

[0230] (Item 4)

[0231] According to the light-emitting module described in item 3, wherein,

[0232] One end of the first semiconductor laser element is located on the light emitting surface, and the other end is located on the opposite surface of the light emitting surface.

[0233] (Item 5)

[0234] The light-emitting module according to any one of items 1 to 4, wherein,

[0235] When viewed from above, the marked area partially overlaps with the first semiconductor laser element.

[0236] (Item 6)

[0237] The light-emitting module according to any one of items 1 to 5, wherein,

[0238] When viewed from above, the area of ​​the first semiconductor laser element that does not overlap with the marked area is larger than the area that overlaps with the marked area.

[0239] (Item 7)

[0240] According to the light-emitting module described in item 5, wherein,

[0241] The one or more semiconductor laser elements are composed of a plurality of semiconductor laser elements, which, when viewed from above, are positioned at the midpoint of the width of the lower surface of the base in the first direction and at the point traversed by a second imaginary straight line parallel to a second direction perpendicular to the first direction.

[0242] When viewed from above, there is a second semiconductor laser element among the plurality of semiconductor laser elements that does not overlap with the marked area at all.

[0243] (Item 8)

[0244] The light-emitting module according to any one of items 1 to 7, wherein,

[0245] When viewed from above, in a second direction perpendicular to the first direction, the width of the marked area is greater than the width of the first semiconductor laser element.

[0246] (Item 9)

[0247] The light-emitting module according to any one of items 1 to 8, wherein,

[0248] The light-emitting module further includes one or more optical components, which are disposed on the base in the first direction at a position away from the first semiconductor laser element at a first distance, for light emitted from the plurality of semiconductor laser elements to enter.

[0249] When viewed from above, in the first direction, the midpoint of the width of the marked area is located at a position farther from the light emitting surface than the first distance.

[0250] (Item 10)

[0251] The light-emitting module according to any one of items 1 to 9, wherein,

[0252] When viewed from above, the proportion of voids in the bonding material of the first portion overlapping the marked area is greater than the proportion of voids in the bonding material of the second portion not overlapping the marked area.

[0253] (Item 11)

[0254] A method for manufacturing a light-emitting module, comprising:

[0255] The process of preparing the heat dissipation substrate;

[0256] The process of preparing a light-emitting device, wherein a first semiconductor laser element is arranged on the upper surface of the light-emitting device having an upper surface and a lower surface and a base to which a mark is applied to a portion of the lower surface, i.e., a mark area, so as to emit light from the light-emitting point of the light-emitting surface in a first direction;

[0257] The process of obtaining management information from the marker;

[0258] The process of joining the base to the heat dissipation substrate by joining the area of ​​the lower surface containing the marked area to the heat dissipation substrate via a bonding material.

[0259] In the process of configuring the first semiconductor laser element, the first semiconductor laser element is configured on the upper surface of the base such that the midpoint of the width of the marking area in the first direction when viewed from above is not located between the two ends of the first semiconductor laser element and a first imaginary straight line parallel to the first direction when viewed from above passes through the marking area and the first semiconductor laser element.

[0260] Industrial availability

[0261] The light-emitting module described in the embodiments can be used in a projector. That is, a projector can be considered one application of the present invention. It should be noted that the present invention is not limited thereto, and can be used in various applications such as lighting, exposure, automotive headlights, head-mounted displays, and backlights for other displays.

[0262] Explanation of reference numerals in the attached figures

[0263] 1: Light-emitting device

[0264] 1A: First light-emitting device

[0265] 1B: Second light-emitting device

[0266] 10: Packaging

[0267] 11: Matrix

[0268] 11A: First upper surface

[0269] 11B: Lower surface

[0270] 11C: Second upper surface

[0271] 11D: Outer surface

[0272] 11D1: First outer surface

[0273] 11D2: Second outer surface

[0274] 11E: Inner surface

[0275] 11F: Staircase

[0276] 11F1: First step

[0277] 11F2: Second Step

[0278] 11G: Upper surface

[0279] 11H: Side view

[0280] 11M: Base

[0281] 11N: Frame

[0282] 12A: Wiring section

[0283] 12A1: Internal wiring section

[0284] 12A2: Outer wiring section

[0285] 13A: Joining pattern

[0286] 13B: Mark

[0287] 14: Cover

[0288] 14A: Top surface

[0289] 14B: Lower surface

[0290] 14C: Side view

[0291] 20: Semiconductor laser components

[0292] 20A: First semiconductor laser element

[0293] 20B: Second semiconductor laser element

[0294] 21A: Upper surface

[0295] 21B: Lower surface

[0296] 21C: Side view

[0297] 22: Light exit surface

[0298] 30: Auxiliary mounting base

[0299] 30A: First auxiliary mounting base

[0300] 31A: Upper surface

[0301] 31B: Lower surface

[0302] 31C: Side view

[0303] 32A: Substrate

[0304] 32B: Upper metal component

[0305] 32C: Lower metal component

[0306] 33: Wiring layer

[0307] 40: Reflective component

[0308] 40A: First reflective component

[0309] 41A: Lower surface

[0310] 41B: Light reflecting surface

[0311] 50: Protective components

[0312] 60: Wiring

[0313] 70: Optical components (lens components)

[0314] 71A: Upper surface

[0315] 71B: Lower surface

[0316] 71C: Side View

[0317] 71D: Lens surface (optical working surface)

[0318] 72A: Lens section

[0319] 72B: Non-lens section

[0320] 101: Wiring board

[0321] 101A: Upper surface

[0322] 101B: Lower surface

[0323] 101D: Heat dissipation unit

[0324] 101E: Wiring Section

[0325] 101F: Insulation section

[0326] 101H: Through hole

[0327] 111: Heat dissipation components

[0328] 111A: First upper surface

[0329] 111B: Second upper surface

[0330] 111E: Lower surface

[0331] 121: Conductive components

[0332] 122A: Upper surface

[0333] 131: Insulating components

[0334] 201: Connector

[0335] 301: Thermistor

[0336] 901: Light-emitting module.

Claims

1. A light-emitting module, characterized in that, have: The base has an upper surface and a lower surface, and a mark is provided on a portion of the lower surface, i.e., the marking area; One or more semiconductor laser elements are disposed on the upper surface of the base, including a first semiconductor laser element that emits light from a light-emitting point on a light-emitting surface in a first direction; A heat dissipation substrate having a heat dissipation portion bonded to the lower surface of the base via a bonding material. The area of ​​the lower surface including the marked region is bonded to the heat dissipation substrate via the bonding material. In the first direction, when viewed from above, the midpoint of the width of the marked area is not located between the two ends of the first semiconductor laser element. When viewed from above, a first imaginary straight line parallel to the first direction passes through the marked area and the first semiconductor laser element.

2. The light-emitting module according to claim 1, characterized in that, In the first direction, the midpoint of the width of the marked area does not overlap with the midpoint of the width of the lower surface of the base.

3. The light-emitting module according to claim 1 or 2, characterized in that, In the first direction, the midpoint of the width of the lower surface of the base is located between the two ends of the first semiconductor laser element.

4. The light-emitting module according to claim 3, characterized in that, One end of the first semiconductor laser element is located on the light emitting surface, and the other end is located on the opposite surface of the light emitting surface.

5. The light-emitting module according to any one of claims 1 to 4, characterized in that, When viewed from above, the marked area partially overlaps with the first semiconductor laser element.

6. The light-emitting module according to any one of claims 1 to 5, characterized in that, When viewed from above, the area of ​​the first semiconductor laser element that does not overlap with the marked area is larger than the area that overlaps with the marked area.

7. The light-emitting module according to claim 5, characterized in that, The one or more semiconductor laser elements are composed of a plurality of semiconductor laser elements, which, when viewed from above, are positioned at the midpoint of the width of the lower surface of the base in the first direction and at the point traversed by a second imaginary straight line parallel to a second direction perpendicular to the first direction. When viewed from above, there is a second semiconductor laser element among the plurality of semiconductor laser elements that does not overlap with the marked area at all.

8. The light-emitting module according to any one of claims 1 to 7, characterized in that, When viewed from above, in a second direction perpendicular to the first direction, the width of the marked area is greater than the width of the first semiconductor laser element.

9. The light-emitting module according to any one of claims 1 to 8, characterized in that, The light-emitting module further includes one or more optical components, which are disposed on the base in the first direction at a position away from the first semiconductor laser element at a first distance, for light emitted from the plurality of semiconductor laser elements to enter. When viewed from above, in the first direction, the midpoint of the width of the marked area is located at a position farther from the light emitting surface than the first distance.

10. The light-emitting module according to any one of claims 1 to 9, characterized in that, When viewed from above, the proportion of voids in the bonding material of the first portion overlapping the marked area is greater than the proportion of voids in the bonding material of the second portion not overlapping the marked area.

11. A method for manufacturing a light-emitting module, characterized in that, include: The process of preparing the heat dissipation substrate; The process of preparing a light-emitting device, wherein a first semiconductor laser element is arranged on the upper surface of the light-emitting device having an upper surface and a lower surface and a base to which a mark is applied to a portion of the lower surface, i.e., a mark area, so as to emit light from the light-emitting point of the light-emitting surface in a first direction; The process of obtaining management information from the marker; The process of joining the base to the heat dissipation substrate by joining the area of ​​the lower surface containing the marked area to the heat dissipation substrate via a bonding material. In the process of configuring the first semiconductor laser element, the first semiconductor laser element is configured on the upper surface of the base such that the midpoint of the width of the marking area in the first direction when viewed from above is not located between the two ends of the first semiconductor laser element and a first imaginary straight line parallel to the first direction when viewed from above passes through the marking area and the first semiconductor laser element.

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