Non-oxidation limited vertical cavity surface emitting laser and preparation method thereof

CN122931434APending Publication Date: 2026-10-16HUACHEN XINGUANG (WUXI) SEMICONDUCTOR CO LTD
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Patent Information

Application Number
CN202611391297.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-09-09
Publication Date
2026-10-16

AI Technical Summary

Technical Problem

热阻较大限制散热性能:Al2O3的热导率仅为约1.5W/m·K,远低于半导体材料

Benefits of technology

1、器件可靠性显著提升:无氧化应力场,消除应力诱导的位错扩展机制,预计器件寿命较传统氧化限制型提升2-5倍。

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Abstract

The application relates to the technical field of lasers, in particular to a non-oxidation-limiting vertical cavity surface emitting laser and a preparation method thereof, which comprises, from bottom to top, a substrate, a buffer layer, an N-type DBR, an N-type cladding layer, an active region, a P-type cladding layer, a limiting layer, a P-type DBR, a contact layer and a passivation layer, wherein the material of the limiting layer is Fe-doped AlGaAs. When the layer is epitaxially grown by MOCVD, iron (Fe) is introduced as a deep level dopant, the deep acceptor level (about 0.47 eV from the top of the valence band) formed by Fe in AlGaAs compensates the background carriers, the material presents a semi-insulating characteristic (the resistivity can reach 10 7 -10 11 Ω·cm), thereby effectively blocking the expansion of the transverse current. The thermal conductivity (10-25 watts per meter kelvin) of the Fe-doped AlGaAs is 15-35 times that of aluminum oxide (0.7 watts per meter kelvin), which significantly improves the heat dissipation performance of the device.
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