Impedance matcher parameter configuration method, impedance matching array, radio frequency power supply system and plasma radio frequency system

Abstract

The application belongs to the technical field of radio frequency power supply, and provides an impedance matching array parameter configuration method, an impedance matching array, a radio frequency power supply system and a plasma radio frequency system. The impedance matching array comprises a plurality of reactive branch units. Each reactive branch unit can be composed of a plurality of controllable inductance modules in series or a plurality of controllable capacitance modules in parallel. The controllable inductance module is composed of an inductance submodule and a switch submodule in parallel, and the adjustable capacitance module is composed of a capacitance submodule and a switch submodule in series. The application controls the equivalent impedance value of each reactive branch unit through the provided impedance matching array parameter configuration method, so that the impedance matching array can realize continuous adjustment of the impedance value within the allowable error range, and the cost is low and the matching speed is fast. The target load can be matched to the standard impedance value, and the reflected power is low.

Description

Technical Field

[0001] This application belongs to the field of radio frequency power supply technology, specifically, it relates to an impedance matching device parameter configuration method, an impedance matching array, a radio frequency power supply system, and a plasma radio frequency system. Background Technology

[0002] The overall architecture of the RF plasma power system includes an RF power supply, a matching circuit, and a cavity load. The RF power supply outputs a power signal to the matching circuit, which performs impedance matching on the cavity load and then transmits the power signal to the cavity load. During operation, the cavity load will experience load changes due to process variations. The matching circuit needs to perform impedance matching in real time according to these changes, ensuring that the impedance of the matching circuit combined with the cavity load approaches and stabilizes at a standard value.

[0003] Existing matching circuits mostly use adjustable vacuum capacitors for impedance adjustment. Vacuum capacitors have the advantage of linearly adjustable capacitance values. By rotating a motor, the capacitance value is adjusted, thereby adjusting the impedance of the matching circuit to bring the overall impedance towards the ideal value and stabilize it. However, this mechanical adjustment method has a slow matching speed, with the fastest response time only reaching the second level, which is difficult to meet the requirements of rapid impedance matching in precision processes such as semiconductor manufacturing and high-precision coating. At the same time, vacuum capacitors are expensive, which leads to a corresponding increase in the overall price of the matching circuit.

[0004] To improve the speed and reduce the cost of matchers, Peter Sjöblom of Lund University in Sweden published a paper in 2007 entitled "..." Measured CMOS Switched High-Quality Capacitors in a Reconfigurable Matching Network The paper proposes an impedance matching method using CMOS switches, which replaces vacuum capacitors and stepper motors with multiple CMOS switches and fixed small capacitors. By controlling the on / off state of the switches, the connection of the corresponding branch capacitors is controlled, thereby adjusting the impedance in the matching circuit, effectively improving matching speed and reducing cost. In 2024, patent CN117459023A, entitled "Impedance Matching Array, Matching Method, RF Power Supply and Plasma RF System," proposed a more flexible impedance matching array and matching method. It uses a combination of switching devices with inductors and capacitors to improve matching flexibility while maintaining the advantages of fast matching and low cost.

[0005] Existing technologies disclose techniques for controlling the connection of multiple fixed-value inductors and capacitors by switching multiple switching devices to adjust impedance matching. While these techniques address speed and cost issues, they fail to consider the impact of inductor coupling and PCB parasitic parameters on impedance accuracy, thus exhibiting core technological flaws. When multiple inductors are connected in series, mutual coupling between them causes the equivalent inductance value after series connection to deviate from the nominal value. Furthermore, parasitic parameters existing on the PCB can cause the equivalent capacitance value of a capacitor at a given nominal value to differ from its nominal value after being connected to the circuit. These deviations prevent the equivalent impedance of the matching circuit from continuously changing within a preset error range, leading to impedance discontinuity issues. Ultimately, this results in insufficient matching accuracy, excessive reflected power, and an inability to meet the matching requirements of high-precision processes.

[0006] Currently, industry optimizations for matching accuracy and stability focus only on improving detection circuits and control algorithms, without proposing solutions from the perspective of circuit parameter configuration. Furthermore, the reactance deviations involved in impedance torsion problems are extremely small and not caused by errors in a single device, making them easily overlooked in practical implementation. At present, no effective circuit-level improvement solutions have been developed. Summary of the Invention

[0007] To address the impedance discontinuity issues caused by inductor coupling and PCB parasitic parameters in impedance matching, and to achieve continuously adjustable impedance matching within the allowable error range of the nominal specifications, this application provides an impedance matching device parameter configuration method, an impedance matching array, an RF power supply system, and a plasma RF system.

[0008] In one embodiment, an impedance matching device parameter configuration method is provided to enable the equivalent impedance values ​​of several impedance sub-modules in the impedance matching array and the reactive branch units composed of the impedance sub-modules to be continuously adjustable within the allowable error range of the nominal index, wherein any reactive branch unit includes at least 3 impedance sub-modules.

[0009] Among them, the impedance submodule is an inductive submodule with inductive impedance characteristics. The parameter configuration rules for the impedance matching nominal index of the corresponding reactance branch unit are continuously adjustable within the allowable error range as follows:

[0010] The equivalent inductance value L measured when the (n+1)th inductor submodule of the tested reactance branch unit is connected alone. x_n+1 The equivalent inductance value L measured when the nth inductor submodule of the same reactance branch unit is connected alone is greater than or equal to the value of the inductor. x_n ; and the equivalent inductance value L measured when the (n+1)th inductor submodule of the tested reactor branch unit is connected alone. x_n+1 The equivalent inductance value Ser_L measured when the first n inductor submodules of the same reactance branch unit are connected in series is less than or equal to this value. x_nThe sum of the first compensation constant value A of the impedance; and the equivalent inductance value Ser_L measured when the first n inductor submodules of the tested reactance branch unit are connected in series. x_n The equivalent inductance value Ser_L measured when the first n+1 inductor submodules of the same reactance branch unit are connected in series is less than or equal to this value. x_n+1 .

[0011] The order of each impedance submodule, n, n+1… (n≥1), is arranged according to the increasing relationship of the equivalent inductance value.

[0012] Furthermore, the parameter configuration rules for continuously adjustable impedance matching nominal parameters of reactance branch units within the allowable error range also include: The equivalent inductance value L measured when the (n+1)th inductor submodule of the tested reactance branch unit is connected alone. x_n+1 The equivalent inductance value Ser_L measured when the first n inductor submodules of the same reactance branch unit are connected in series is greater than or equal to this value. x_n The sum of the third compensation constant value P of the impedance, wherein the third compensation constant value P is less than or equal to the first compensation constant value A.

[0013] Furthermore, the first compensation constant value and the third compensation constant value are arbitrary real numbers.

[0014] Furthermore, the first compensation constant value of the impedance is the compensation inductance value, which ranges from -15nH to 15nH.

[0015] Furthermore, the inductor submodule is composed of several switching devices, inductors and / or several capacitors connected in series, parallel or interleaved, and the overall impedance characteristic of the module is inductive.

[0016] In one embodiment, an impedance matching device parameter configuration method is provided to enable the equivalent impedance values ​​of several impedance sub-modules in the impedance matching array and the reactive branch units composed of the impedance sub-modules to be continuously adjustable within the allowable error range of the nominal index, wherein any reactive branch unit includes at least 3 impedance sub-modules.

[0017] Among them, the impedance submodule is a capacitive submodule with capacitive impedance characteristics. The parameter configuration rule for the impedance matching nominal index of the corresponding reactance branch unit, which is continuously adjustable within the allowable error range, is as follows: The equivalent capacitance value C measured when the (n+1)th capacitor submodule of the tested reactance branch unit is connected alone. x_n+1 The equivalent capacitance C measured when the nth capacitor submodule of the same reactance branch unit is connected alone is greater than or equal to the value of the capacitor. x_n ; And the equivalent capacitance value C measured when the (n+1)th capacitor submodule of the tested reactance branch unit is connected alone. x_n+1The equivalent capacitance value Par_C measured when the first n capacitor submodules of the same capacitor branch unit are connected in parallel is less than or equal to this value. x_n The sum of the second compensation constant value B of the impedance; And the equivalent capacitance value Par_C measured when the first n capacitor sub-modules of the tested reactance branch unit are connected in parallel. x_n The equivalent capacitance value Par_C measured when the first n+1 capacitor submodules of the same reactance branch unit are connected in parallel is less than or equal to this value. x_n+1 .

[0018] The order of each impedance submodule, n, n+1… (n≥1), is arranged according to the increasing relationship of the equivalent capacitance value.

[0019] Furthermore, the parameter configuration rules for continuously adjustable impedance matching nominal parameters of reactance branch units within the allowable error range also include: The equivalent capacitance value C measured when the (n+1)th capacitor submodule of the tested reactance branch unit is connected alone. x_n+1 The equivalent capacitance value Par_C measured when the first n capacitor submodules of the same capacitor branch unit are connected in parallel is greater than or equal to this value. x_n The sum of the fourth compensation constant value Q of the impedance, wherein the fourth compensation constant value Q is less than or equal to the second compensation constant value B.

[0020] Furthermore, the second compensation constant value and the fourth compensation constant value are arbitrary real numbers.

[0021] Furthermore, the second compensation constant value of the impedance is the compensation capacitor value, which ranges from -15pF to 15pF.

[0022] Furthermore, the capacitor submodule is composed of several switching devices, inductors and / or several capacitors connected in series, parallel or interleaved, and the overall impedance characteristic of the module is capacitive.

[0023] In one approach, an impedance matching array is provided. The impedance matching array uses the impedance matching device parameter configuration method described in the aforementioned approach to obtain the matching equivalent parameters of each impedance device, thereby enabling the impedance matching device to be continuously adjustable within the allowable error range of the nominal specifications.

[0024] Furthermore, after the impedance sub-modules of the impedance matching array are sorted from low to high according to their reactance values, the first half of the impedance sub-modules and the second half of the impedance sub-modules are arranged in an alternating manner, forming an alternating arrangement of impedance sub-modules with low reactance values ​​and high reactance values. By utilizing the complementary index margins between each impedance sub-module, the adjustable parameters of the reactance branch unit can be continuously adjusted within the allowable error range.

[0025] In one embodiment, the reactance branch unit includes an inductance branch unit and / or a capacitor branch unit; the inductance branch unit includes at least three controllable inductance modules, each controllable inductance module being composed of inductance sub-modules and switch sub-modules connected in parallel, and the controllable inductance modules are connected in series; the capacitor branch unit includes at least three controllable capacitor modules, each controllable capacitor module being composed of capacitor sub-modules and switch sub-modules connected in series, and the controllable capacitor modules are connected in parallel.

[0026] In one embodiment, the reactance branch unit includes an inductance branch unit and / or a capacitor branch unit; the inductance branch unit includes at least three structurally identical controllable inductor modules, each controllable inductor module being composed of inductor sub-modules and switch sub-modules connected in parallel, and the controllable inductor modules being connected in series; the capacitor branch unit includes at least three structurally identical controllable capacitor modules, each controllable capacitor module being composed of capacitor sub-modules and switch sub-modules connected in series, and the controllable capacitor modules being connected in parallel.

[0027] In one scheme, the impedance matching array structure consists of an α-type structure composed of two reactance branch units; or an L-type structure composed of two reactance branch units; or a T-type structure composed of three reactance branch units; or a π-type structure composed of three reactance branch units.

[0028] In one embodiment, an RF power supply system is provided, including an RF power supply and a matching unit, wherein the matching unit includes the impedance matching array described in the aforementioned embodiment.

[0029] By controlling the equivalent reactance of each reactance branch unit, the impedance matching device can achieve continuous impedance adjustment within the allowable error range of the nominal index; by controlling the switching transistors of each switching submodule in the impedance matching array, the impedance value of the impedance matching array is adjusted to perform impedance matching.

[0030] In one embodiment, a plasma radio frequency system is provided, comprising a radio frequency power supply, a matching unit, and a cavity load connected in sequence, wherein the matching unit includes the impedance matching array described in the aforementioned embodiment.

[0031] When the cavity load changes due to process operation, the switching transistors of each switching submodule in the impedance matching array are controlled according to the load change, and the impedance value of the impedance matching array is adjusted to perform impedance matching, so that the matching device, combined with the impedance of the cavity load, moves toward the standard value and tends to stabilize.

[0032] The beneficial effects of this application are: This application limits the range of equivalent inductance and equivalent capacitance values ​​of the impedance submodules in each reactance branch unit, and improves the adverse effects of inductor coupling and PCB parasitic parameters by optimizing the layout of inductors and capacitors on the PCB. At the same time, it improves the circuit structure of the matching device and precisely controls the measured equivalent reactance of each reactance branch unit, ensuring that the equivalent impedance of the impedance matching array is continuously adjustable within the allowable error range. It solves the problems of equivalent reactance deviation and impedance discontinuity caused by inductive coupling and PCB parasitic parameters from the circuit parameter configuration level. It retains the advantages of fast matching speed and low device cost of the fixed reactance scheme of switch control, and achieves accurate and stable impedance matching, effectively reducing reflected power and reliably matching the load to near the standard impedance. It solves the technical problem of excessive reflected power caused by insufficient matching accuracy of the impedance matching device, which cannot meet the fast and accurate matching requirements of precision processes such as semiconductor manufacturing and high-precision coating. Attached Figure Description

[0033] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 This is a schematic block diagram of an impedance matching array in one embodiment of this application; Figure 2A This is a first type of circuit diagram of a first type of impedance matching array in one embodiment of this application; Figure 2B This is a comparison diagram of the equivalent inductance of the inductor branch of the first type of impedance matching array in one embodiment of this application; Figure 2C This is a second type of circuit diagram of the first type of impedance matching array in one embodiment of this application; Figure 3A This is a first type of circuit diagram of the second type of impedance matching array in one embodiment of this application; Figure 3B This is a second type of circuit diagram of the second type of impedance matching array in one embodiment of this application; Figure 4A This is a first type of circuit diagram of the third type of impedance matching array in one embodiment of this application; Figure 4B This is a second type of circuit diagram of the third type of impedance matching array in one embodiment of this application; Figure 4C This is a third type of circuit diagram of a third type of impedance matching array in one embodiment of this application; Figure 4DThis is a fourth type of circuit diagram of the third type of impedance matching array in one embodiment of this application; Figure 5 This is a circuit diagram of the fourth type of impedance matching array in one embodiment of this application; Figure 6A This is a first type of circuit diagram of the fifth type of impedance matching array in one embodiment of this application; Figure 6B This is a second type of circuit diagram of the fifth type of impedance matching array in one embodiment of this application; Figure 6C This is a third type of circuit diagram of the fifth type of impedance matching array in one embodiment of this application; Figure 7A This is a first type of circuit diagram of the sixth type of impedance matching array in one embodiment of this application; Figure 7B This is a second type of circuit diagram for the sixth type of impedance matching array in one embodiment of this application; Figure 7C This is a third type of circuit diagram for the sixth type of impedance matching array in one embodiment of this application; Figure 8A This is a schematic diagram of an L-shaped structure consisting of two reactor branch units in one embodiment of this application; Figure 8B This is a schematic diagram of an α-type structure consisting of two reactance branch units in one embodiment of this application; Figure 8C This is a schematic diagram of a T-shaped structure consisting of three reactor branch units in one embodiment of this application; Figure 8D This is a schematic diagram of a π-type structure consisting of three reactance branch units in one embodiment of this application; Figure 8E This is a typical circuit diagram of an α-type structure composed of two reactance branch units in one embodiment of this application; Figure 8F This is a typical circuit diagram of a T-shaped structure consisting of three reactance branch units in one embodiment of this application; Figure 8G This is a typical circuit diagram of a π-type structure composed of three reactance branch units in one embodiment of this application. Detailed Implementation

[0035] The specific embodiments of this application will be further described in detail below with reference to the accompanying drawings and examples. The following examples are used to illustrate this application, but are not intended to limit the scope of this application. Similarly, the following examples are only some embodiments of this application, not all embodiments. All other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0036] In this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0037] In this application, the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to a specific feature, structure, material, or characteristic described in connection with that embodiment or example, which is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0038] In this application, "equivalent inductance L" and "equivalent capacitance C" are the measured values ​​of the corresponding impedance devices, and the reactance or impedance value of the impedance matching array is composed of inductive reactance. jωL or resistance 1 / (jωC) The calculation formula reflects this.

[0039] To address the impedance discontinuity issues caused by inductor coupling and PCB parasitic parameters in impedance matching, and to achieve continuously adjustable impedance matching within the allowable error range of the nominal specifications, this application provides a method for configuring impedance matching device parameters. Specific embodiments are as follows: In one embodiment, please refer to Figure 1 and Figure 2A An impedance matching device parameter configuration method is provided to enable the equivalent impedance values ​​of several impedance sub-modules in the impedance matching array and the reactance branch unit composed of the impedance sub-modules to be continuously adjustable within the allowable error range of the nominal index, wherein any of the reactance branch units includes at least 3 impedance sub-modules.

[0040] When the impedance submodule is an inductive submodule with inductive impedance characteristics, the parameter configuration rule for the impedance matching nominal index of the corresponding reactance branch unit, which is continuously adjustable within the allowable error range, satisfies: equivalent inductance value L x_n+1 ≥L x_n L x_n+1 ≤Ser_L x_n +A and Ser_L x_n ≤Ser_L x_n+1 .

[0041] That is, the equivalent inductance value L measured when the (n+1)th inductor submodule of the xth reactance branch unit is connected alone. x_n+1 The equivalent inductance value L measured when the nth inductor submodule of the xth reactance branch unit is connected alone. x_n ; and the equivalent inductance value L measured when the (n+1)th inductor submodule of the xth reactance branch unit is connected alone. x_n+1 The equivalent inductance value Ser_L measured when the first n inductor submodules of the x-th reactance branch unit are connected in series. x_n In addition, the first compensation constant value A of the impedance; and the equivalent inductance value Ser_L measured when the first n inductor submodules of the x-th reactance branch unit are connected in series. x_n The equivalent inductance value Ser_L measured when the first n+1 inductor submodules of the x-th reactance branch unit are connected in series. x_n+1 .

[0042] The inductor submodule can be composed of multiple inductors and / or capacitors in any connection form, and the overall impedance characteristic is inductive; the order of each impedance submodule n, n+1… (n≥1) is arranged according to the increasing relationship of the equivalent inductance value; the first compensation constant value is a requirement variable set according to the allowable error range of the nominal index.

[0043] For example, please refer to Figure 1 A schematic diagram of an impedance matching array. One inductor branch unit of the impedance matching array consists of n+1 inductor modules connected in series with each other. Each inductor module consists of a switch submodule and an inductor submodule connected in parallel. The inductor submodule consists of more than one inductor device connected in any way, such as in series, parallel or interleaved connection.

[0044] Due to coupling between the various inductor submodules and the influence of PCB parasitic parameters, the equivalent inductance value in the circuit connected to the inductor branch unit is not equal to the sum of the equivalent inductances of individual inductor submodules. For example, the equivalent inductance value measured when inductor submodule 1_1 is connected alone is equal to L1, the equivalent inductance value measured when inductor submodule 1_2 is connected alone is equal to L2, and the equivalent inductance value measured when inductor submodules 1_1 and 1_2 are connected simultaneously is equal to L... ∑2 Due to the coupling between inductor submodules and the influence of PCB parasitic parameters, L1 + L2 ≠ L. ∑2 Specifically, due to the mutual coupling between inductors, the mutual inductance between inductor L1 and inductor L2 is M. Therefore, the total inductance L after inductors L1 and L2 are connected is L = L1 + L2 + 2 × M.

[0045] Furthermore, the equivalent inductance value measured when the nth inductor submodule of the inductor branch unit is connected alone is defined as L.n The equivalent inductance value measured when the (n+1)th inductor submodule of the inductor branch unit is connected alone is L. n+1 The equivalent inductance value measured when the first n inductor submodules of the inductor branch unit are connected in series is Ser_L. n The equivalent inductance value measured when the first n+1 inductor submodules of the inductor branch unit are connected in series is Ser_L. n+1 .

[0046] To ensure that the equivalent inductance value of the inductor branch unit is continuously adjustable within a certain error range, the following three conditions must be met: the equivalent inductance value measured when the (n+1)th inductor submodule of the inductor branch unit is connected alone is L. n+1 The equivalent inductance value measured when the nth inductor submodule of the inductor branch unit is connected alone is greater than or equal to L. n Furthermore, the equivalent inductance value measured when the (n+1)th inductor submodule of the inductor branch unit is connected alone is L. n+1 The equivalent inductance value measured when the first n inductor submodules of the inductor branch unit are connected in series is less than or equal to Ser_L. n In addition, a real inductance value A greater than 0 is added, where A can be any value between -15nH and 15nH; and the equivalent inductance value Ser_L is measured when the first n inductor submodules of the inductor branch unit are connected in series. n The equivalent inductance value Ser_L, measured when the first n+1 inductor submodules of the inductor branch unit are connected in series, is less than or equal to this value. n+1 That is, satisfying: L n+1 ≥L n L x_n+1 ≤Ser_L n +A and Ser_L n ≤Ser_L n+1 .

[0047] In one embodiment, please refer to Figure 1 and Figure 2A An impedance matching device parameter configuration method is provided to enable the equivalent impedance values ​​of several impedance sub-modules in the impedance matching array and the reactance branch unit composed of the impedance sub-modules to be continuously adjustable within the allowable error range of the nominal index, wherein any of the reactance branch units includes at least 3 impedance sub-modules.

[0048] When the impedance submodule is a capacitive submodule with capacitive impedance characteristics, the parameter configuration rule for the impedance matching nominal index of the corresponding reactance branch unit, which is continuously adjustable within the allowable error range, satisfies: equivalent capacitance value C x_n+1 ≥C x_n C x_n+1 ≤Par_C x_n +B and Par_Cx_n ≤Par_C x_n+1 .

[0049] That is, the equivalent capacitance value C measured when the (n+1)th capacitor submodule of the xth reactance branch unit is connected alone. x_n+1 The equivalent capacitance C measured when the nth capacitor submodule of the xth reactance branch unit is connected alone. x_n ; and the equivalent capacitance value C measured when the (n+1)th capacitor submodule of the xth reactance branch unit is connected alone. x_n+1 The equivalent capacitance value Par_C measured when the first n capacitor submodules of the x-th reactance branch unit are connected in parallel, which is less than or equal to the x-th reactance branch unit. x_n In addition, the second compensation constant value B of the impedance; and the equivalent capacitance value Par_C measured when the first n capacitor sub-modules of the x-th reactance branch unit are connected in parallel. x_n The equivalent capacitance value Par_C measured when the first n+1 capacitor submodules of the x-th reactor branch unit are connected in parallel is less than or equal to the value of the x-th reactor branch unit. x_n+1 .

[0050] The capacitor submodule can be composed of multiple inductors and / or capacitors in any connection form, and the overall impedance characteristic is capacitive; the order of each impedance submodule n, n+1... (n≥1) is arranged according to the increasing relationship of the equivalent capacitance value; the second compensation constant value is a requirement variable set according to the allowable error range of the nominal index.

[0051] For example, please refer to Figure 1 A schematic diagram of an impedance matching array. One capacitor branch unit of the impedance matching array consists of n+1 capacitor modules. The capacitor modules are connected in parallel with each other. Each capacitor module consists of a switch submodule and a capacitor submodule connected in series. The capacitor submodule consists of more than one capacitor element connected in any way, such as in series, parallel or interleaved connection.

[0052] Due to the influence of parasitic parameters on the PCB between individual capacitor submodules, the equivalent capacitance value in the circuit connected to the capacitor branch unit is not equal to the sum of the equivalent capacitances of individual capacitor submodules connected. For example, the equivalent capacitance value measured when capacitor submodule 2_1 is connected alone is equal to C1, the equivalent capacitance value measured when capacitor submodule 2_2 is connected alone is equal to C2, and the equivalent capacitance value measured when capacitor submodules 1_1 and 1_2 are connected simultaneously is equal to C1. ∑2 Due to the influence of PCB parasitic parameters, C1+C2≠C ∑2 Specifically, the PCB contains lead inductance L, and the actual capacitance currently connected is C. Therefore, the measured equivalent capacitance is... C' The calculation formula is as follows:

[0053] The equivalent capacitance value measured when the nth capacitor submodule of the capacitor branch unit is connected alone is defined as C. n The equivalent capacitance value measured when the (n+1)th capacitor submodule of the capacitor branch unit is connected alone is C. n+1 When the first n capacitor submodules of the capacitor branch unit are connected in parallel, the equivalent capacitance value measured is Par_C. n The equivalent capacitance value measured when the first n+1 capacitor submodules of the capacitor branch unit are connected in parallel is Par_C. n+1 To ensure that the equivalent capacitance of the capacitor branch unit is continuously adjustable within a certain error range, the following three conditions must be met: the equivalent capacitance C measured when the (n+1)th capacitor submodule of the capacitor branch unit is connected alone. n+1 The equivalent capacitance C measured when the nth capacitor submodule of the capacitor branch unit is connected alone is greater than or equal to this value. n Furthermore, the equivalent capacitance value C measured when the (n+1)th capacitor submodule of the capacitor branch unit is connected alone. n+1 The equivalent capacitance value Par_C measured when the first n capacitor submodules of the capacitor branch unit are connected in parallel, which is less than or equal to the value of the capacitor branch unit. n In addition, a real capacitance value B greater than 0 is added, where B can be any value between -15pF and 15pF; and the equivalent capacitance value Par_C is measured when the first n capacitor submodules of the capacitor branch unit are connected in parallel. n The equivalent capacitance value Par_C measured when the first n+1 capacitor submodules of the capacitor branch unit are connected in parallel, which is less than or equal to the value of the capacitor branch unit. n+1 That is, satisfying: C n+1 ≥C n C n+1 ≤Par_C n +B, Par_C n ≤Par_C n+1 .

[0054] In one embodiment, based on the foregoing embodiments, when the impedance submodule is an inductive submodule with inductive impedance characteristics, the parameter configuration rule for continuously adjusting the nominal impedance matching index of the corresponding reactance branch unit within the allowable error range further includes: The equivalent inductance value L measured when the (n+1)th inductor submodule of the xth reactance branch unit is connected alone. x_n+1 The equivalent inductance value Ser_L measured when the first n inductor submodules of the x-th reactance branch unit are connected in series is greater than or equal to this value. x_n In addition, a third compensation constant P for impedance is added, where the third compensation constant P is less than or equal to the first compensation constant A. That is, Ser_L x_n +A≥L x_n+1 ≥Ser_Lx_n +P, P≤A.

[0055] When the impedance submodule is a capacitive submodule with capacitive impedance characteristics, the parameter configuration rules for the corresponding reactance branch unit, which allow for continuous adjustment of the nominal impedance matching index within the allowable error range, also include: The equivalent capacitance value C measured when the (n+1)th capacitor submodule of the xth reactor branch unit is connected alone. x_n+1 The equivalent capacitance value Par_C measured when the first n capacitor submodules of the x-th capacitor branch unit are connected in parallel is greater than or equal to that of the x-th capacitor branch unit. x_n In addition, a fourth compensation constant value Q is added to the impedance, where Q is less than or equal to the second compensation constant value B. That is, Par_C x_n +B≥C x_n+1 ≥Par_C x_n +Q, Q≤B.

[0056] Furthermore, the first compensation constant A, the second compensation constant B, the third compensation constant P, and the fourth compensation constant Q of the impedance are all arbitrary real numbers, and are required variables set according to the allowable error range of the nominal specifications. Among them, the first compensation constant A and the second compensation constant B can be regarded as adjustable upper limits set for the target value point n; the third compensation constant P and the fourth compensation constant Q can be regarded as adjustable lower limits set for the target value point n.

[0057] Specifically, the first compensation constant value A of the impedance is the compensation inductance value, which takes a value of -15nH to 15nH; the second compensation constant value B of the impedance is the compensation capacitance value, which takes a value of -15pF to 15pF. In particular, the continuously adjustable accuracy of the equivalent inductance of the inductor branch unit of the reactance branch unit in this application can reach 15nH or more, and the continuously adjustable accuracy of the equivalent capacitance of the capacitor branch unit of the reactance branch unit can reach 10pF or more.

[0058] Preferably, the first compensation constant value A of the impedance is 8nH to 15nH; the second compensation constant value B of the impedance is 4pF to 15pF.

[0059] In one embodiment, an impedance matching array is provided. The impedance matching array uses the impedance matching device parameter configuration method in the aforementioned embodiment to obtain the matching equivalent parameters of each impedance device, so as to realize that the impedance matching device is continuously adjustable within the allowable error range of the nominal index, and each reactance branch unit includes at least 3 impedance sub-modules.

[0060] In one embodiment, the impedance sub-modules of the impedance matching array are sorted from low to high according to their reactance values. The first half of the impedance sub-modules are arranged in an alternating manner with the second half of the impedance sub-modules, forming an alternating arrangement of low reactance values ​​and high reactance values. The adjustable parameters of the reactance branch unit are continuously adjustable within the allowable error range by utilizing the complementary index margins between the impedance sub-modules.

[0061] In one embodiment, the reactance branch unit includes an inductance branch unit and / or a capacitor branch unit; the inductance branch unit includes at least three controllable inductor modules, each controllable inductor module being composed of inductor sub-modules and switch sub-modules connected in parallel, and all controllable inductor modules are connected in series; the capacitor branch unit includes at least three controllable capacitor modules, each controllable capacitor module being composed of capacitor sub-modules and switch sub-modules connected in series, and all controllable capacitor modules are connected in parallel. Specifically, the inductance branch unit includes at least three controllable inductor modules with identical structures, and / or the capacitor branch unit includes at least three controllable capacitor modules with identical structures.

[0062] For example, please refer to Figure 2A The circuit diagram shown is for a first type of impedance matching array, consisting of an inductor branch unit and a capacitor branch unit. The inductor branch unit comprises three controllable inductor modules connected in series. Each controllable inductor module consists of a switch submodule and an inductor submodule connected in parallel. Each inductor submodule includes one inductor, and each switch submodule includes one switch transistor. The capacitor branch unit comprises three controllable capacitor modules connected in parallel. Each controllable capacitor module consists of a switch submodule and a capacitor submodule connected in series. Each inductor submodule includes one capacitor, and each switch submodule includes one switch transistor. The equivalent impedance of the impedance matching array is controlled by controlling the on / off state of each switching device.

[0063] For further details, please refer to Figure 2B --according to Figure 2A A comparison diagram of the equivalent inductance values ​​obtained from the circuit structure of this application and existing methods is shown. The horizontal axis (0 and 1) indicates the off and on states of the three switches in the inductor branch, respectively; the vertical axis represents the equivalent inductance value of the impedance-inductance branch, where the ideal state represents the equivalent inductance value without considering parasitic parameters and inductor coupling, i.e., equal to the sum of the nominal values ​​of each inductor. The existing solution is the equivalent inductance value measured by the existing impedance matching method without considering parasitic parameters and inductor coupling; the improved solution is the equivalent inductance value measured after configuring the impedance matching device parameters proposed in this application. The parameter configuration of the inductor branch is used as an example for explanation. Figure 2AAs shown, the three inductors in the inductor branch have values ​​of 10nH, 20nH, and 40nH, respectively. During implementation, due to the presence of parasitic parameters, existing solutions often exhibit… Figure 2B The fault phenomenon shown by the dashed line means that intermediate values ​​of the fault, such as 40nH or 50nH, cannot be obtained, thus affecting the accuracy and stability of the matching. Because L... base When the value of the impedance is relatively small, parasitic parameters in the circuit or coupling between inductors can cause discontinuities. These discontinuities are not errors caused by a single device, but rather by the influence of that single device within the system. Because the inductance involved in the discontinuity problem is relatively small and not caused by errors in a single device, this problem is easily overlooked during implementation. The impedance matching parameter configuration method proposed in this application can effectively improve the equivalent impedance discontinuity problem existing in current methods, controlling the equivalent impedance error of the inductor branch to within 10nH. Similarly, the equivalent impedance of the capacitor branch can also be continuously adjusted using the impedance matching parameter configuration method proposed in this application.

[0064] For example, please refer to Figure 2C The circuit diagram shown is for the second type of the first type of impedance matching array. This impedance matching array consists of one inductor branch unit and one capacitor branch unit. The inductor branch unit consists of 7 controllable inductor modules connected in series. Each controllable inductor module consists of a switch submodule and an inductor submodule connected in parallel. Each inductor submodule includes one inductor, and each switch submodule includes one switch transistor. The capacitor branch unit consists of 9 controllable capacitor modules connected in parallel. Each controllable capacitor module consists of a switch submodule and a capacitor submodule connected in series. Each inductor submodule includes one capacitor, and each switch module includes one switch transistor.

[0065] For the inductor branch unit, when all inductor submodules are not connected, all switches in the inductor branch are turned on, and the measured equivalent inductance value L... 1_0 =100nH; the equivalent inductance value measured when inductor submodule 1_1 is connected alone is equal to L. 1_1 =110nH, the equivalent inductance value measured when inductor submodule 1_2 is connected alone is equal to L. 1_2 =120nH, the equivalent inductance value measured when the first two inductor submodules of the inductor branch unit are connected simultaneously is equal to L. ∑2 =129nH; The equivalent inductance value measured when inductor submodule 1_3 is connected alone is equal to L. 1_3 =139nH, the equivalent inductance value measured when the first three inductor submodules of the inductor branch unit are connected simultaneously is equal to L. ∑3 =164nH; The equivalent inductance value measured when inductor submodule 1_4 is connected alone is equal to L. 1_4=169nH, the equivalent inductance value measured when the first four inductor submodules of the inductor branch unit are connected simultaneously is equal to L. ∑3 =228nH; The equivalent inductance value measured when inductor submodule 1_5 is connected alone is equal to L. 1_5 =233nH, the equivalent inductance value measured when the first 5 inductor submodules of the inductor branch unit are connected simultaneously is equal to L. ∑5 =346nH; The equivalent inductance value measured when inductor submodule 1_6 is connected alone is equal to L. 1_6 =351nH, the equivalent inductance value measured when the first 6 inductor submodules of the inductor branch unit are connected simultaneously is equal to L. ∑6 =560nH; The equivalent inductance value measured when inductor submodule 1_7 is connected alone is equal to L. 1_7 =565nH, the equivalent inductance value measured when the first 7 inductor submodules of the inductor branch unit are connected simultaneously is equal to L. ∑7 =931nH. Based on this, by controlling the on / off state of each switch in the inductor branch unit, the equivalent inductance value of the inductor branch unit can be continuously adjusted within the range of 100nH to 931nH, with an error of less than or equal to 15nH.

[0066] For the capacitor branch, when all capacitor submodules are not connected, all switches in the capacitor branch are turned off, and the measured equivalent capacitance value C is... 1_0 =130pF; The equivalent capacitance value measured when capacitor submodule 2_1 is connected alone is equal to C. 2_1 =134pF, the equivalent capacitance value measured when capacitor submodule 2_2 is connected alone is equal to C. 2_2 =138pF, the equivalent capacitance value measured when the first two capacitor submodules of the capacitor branch unit are connected simultaneously is equal to C. ∑2 =144pF; The equivalent capacitance value measured when capacitor submodule 2_3 is connected alone is equal to C. 2_3 =147pF, the equivalent capacitance value measured when the first 3 capacitor submodules of the capacitor branch unit are connected simultaneously is equal to C. ∑3 =162pF; The equivalent capacitance value measured when capacitor submodule 2_4 is connected alone is equal to C. 2_4 =166pF, the equivalent capacitance value measured when the first four capacitor submodules of the capacitor branch unit are connected simultaneously is equal to C. ∑4 =200pF; The equivalent capacitance value measured when capacitor submodule 2_5 is connected alone is equal to C. 2_5 =204pF, the equivalent capacitance value measured when the first 5 capacitor submodules of the capacitor branch unit are connected simultaneously is equal to C. ∑5 =270pF; The equivalent capacitance value measured when capacitor submodule 2_6 is connected alone is equal to C. 2_6 =274pF, the equivalent capacitance value measured when the first 6 capacitor submodules of the capacitor branch unit are connected simultaneously is equal to C.∑2 =427pF; The equivalent capacitance value measured when capacitor submodule 2_7 is connected alone is equal to C. 2_7 =431pF, the equivalent capacitance measured when the first 7 capacitor submodules of the capacitor branch unit are connected simultaneously is equal to C. ∑7 =790pF; The equivalent capacitance value measured when capacitor submodule 2_8 is connected alone is equal to C. 2_8 =790pF, the equivalent capacitance value measured when the first 8 capacitor submodules of the capacitor branch unit are connected simultaneously is equal to C. ∑8 =1720pF; The equivalent capacitance value measured when capacitor submodule 2_9 is connected alone is equal to C. 2_9 =1700pF, the equivalent capacitance value measured when the first 9 capacitor submodules of the capacitor branch unit are connected simultaneously is equal to C. ∑9 =2440pF. Based on this, by controlling the on / off state of each switch in the capacitor branch unit, the equivalent capacitance value of the capacitor branch unit can be continuously adjusted within the range of 130pF to 2440pF, with an error of less than or equal to 10pF.

[0067] For example, please refer to Figure 3A The circuit diagram shown is for the first type of the second type of impedance matching array. This impedance matching array consists of one inductor branch unit and one capacitor branch unit. The inductor branch unit comprises three controllable inductor modules connected in series. Each controllable inductor module consists of a switch submodule and an inductor submodule connected in parallel. Each inductor submodule includes one inductor, and each switch submodule includes one switch transistor. The capacitor branch unit comprises four controllable capacitor modules connected in parallel. Each controllable capacitor module consists of a switch submodule and a capacitor submodule connected in series. Each inductor submodule includes one capacitor, and each switch submodule includes three switches connected in parallel. 301 is switch submodule 2_1 of the capacitor branch unit, 302 is switch submodule 2_2 of the capacitor branch unit, 303 is switch submodule 2_3 of the capacitor branch unit, and 304 is switch submodule 2_4 of the capacitor branch unit.

[0068] For example, please refer to Figure 3BThe second type of impedance matching array shown is a circuit diagram of the second type. This impedance matching array consists of one inductor branch unit and one capacitor branch unit. The inductor branch unit consists of three controllable inductor modules connected in series. Each controllable inductor module consists of a switch submodule and an inductor submodule connected in parallel. Each inductor submodule includes one inductor, and each switch submodule includes one switch transistor. The capacitor branch unit consists of four controllable capacitor modules connected in parallel. Each controllable capacitor module consists of a switch submodule and a capacitor submodule connected in series. Each inductor submodule includes two capacitors connected in parallel, and each switch submodule includes one switch transistor. 305 is capacitor submodule 2_1 of the capacitor branch unit, 306 is capacitor submodule 2_2 of the capacitor branch unit, 307 is controllable capacitor submodule 2_3 of the capacitor branch unit, and 308 is capacitor submodule 2_4 of the capacitor branch unit.

[0069] For example, please refer to Figure 4A The circuit diagram shown is for the first type of the third type of impedance matching array. This impedance matching array consists of one inductor branch unit and one capacitor branch unit. The inductor branch unit comprises seven controllable inductor modules connected in series. Each controllable inductor module consists of a switch submodule and an inductor submodule connected in parallel. Each inductor submodule includes one inductor, and each switch submodule includes one switch transistor. The capacitor branch unit comprises nine controllable capacitor modules connected in parallel. Each controllable capacitor module consists of a switch submodule and a capacitor submodule connected in series. Each inductor submodule includes one capacitor, and each switch submodule includes one switch transistor. Additionally, a module 401 containing only one capacitor is connected in series with the capacitor branch unit.

[0070] For example, please refer to Figure 4B The circuit diagram shown is for the second type of the third type of impedance matching array. This impedance matching array consists of one inductor branch unit and one capacitor branch unit. The inductor branch unit comprises seven controllable inductor modules connected in series. Each controllable inductor module consists of a switch submodule and an inductor submodule connected in parallel. Each inductor submodule includes one inductor, and each switch submodule includes one switch transistor. The capacitor branch unit comprises nine controllable capacitor modules connected in parallel. Each controllable capacitor module consists of a switch submodule and a capacitor submodule connected in series. Each inductor submodule includes one capacitor, and each switch submodule includes one switch transistor. Additionally, a module 402 containing only one inductor is connected in series with the capacitor branch unit.

[0071] For example, please refer to Figure 4CThe circuit diagram shown is for the third type of impedance matching array, which consists of an inductor branch unit and a capacitor branch unit. The inductor branch unit comprises seven controllable inductor modules connected in series. Each controllable inductor module consists of a switch submodule and an inductor submodule connected in parallel. Each inductor submodule includes one inductor, and each switch submodule includes one switch transistor. The capacitor branch unit comprises nine controllable capacitor modules connected in parallel. Each controllable capacitor module consists of a switch submodule and a capacitor submodule connected in series. Each inductor submodule includes one capacitor, and each switch submodule includes one switch transistor. Additionally, an LC resonant module 403 is connected in series with the inductor branch unit.

[0072] For example, please refer to Figure 4D The circuit diagram shown is for the fourth type of the third type of impedance matching array. This impedance matching array consists of an inductor branch unit, a capacitor branch unit, and a reactance branch unit composed of an LC resonant module 404. The inductor branch unit consists of 7 controllable inductor modules connected in series. Each controllable inductor module consists of a switch submodule and an inductor submodule connected in parallel. Each inductor submodule includes one inductor, and each switch submodule includes one switch transistor. The capacitor branch unit consists of 9 controllable capacitor modules connected in parallel. Each controllable capacitor module consists of a switch submodule and a capacitor submodule connected in series. Each inductor submodule includes one capacitor, and each switch submodule includes one switch transistor.

[0073] For example, please refer to Figure 5 The circuit diagram shown represents the fourth type of impedance matching array, which consists of two capacitor branch units. Each capacitor branch unit comprises nine controllable capacitor modules connected in parallel. Each controllable capacitor module consists of a switch submodule and a capacitor submodule connected in series. Each inductor submodule includes one capacitor, and each switch submodule includes one switch transistor. Additionally, a module 501 containing only one inductor is connected in series with the first capacitor branch unit.

[0074] For example, please refer to Figure 6AThe circuit diagram shown is for the first type of the fifth type of impedance matching array. This impedance matching array consists of one inductor branch unit and one capacitor branch unit. The inductor branch unit comprises six controllable inductor modules connected in series. Each controllable inductor module consists of a switch submodule and an inductor submodule connected in parallel. Each inductor submodule includes one inductor, and each switch module includes one switch transistor. The capacitor branch unit comprises nine controllable capacitor modules connected in parallel. Each controllable capacitor module consists of a switch submodule and a capacitor submodule connected in series. Each inductor submodule includes one capacitor, and each switch module includes one switch transistor. All inductor submodules in the inductor branch unit are sorted by their equivalent inductance values ​​from smallest to largest, i.e., L... 1_1 ~L 1_6 The values ​​increase sequentially, and are arranged in ascending order on the circuit and PCB.

[0075] For example, please refer to Figure 6B The circuit diagram shown is for the second type of the fifth type of impedance matching array. This impedance matching array consists of one inductor branch unit and one capacitor branch unit. The inductor branch unit comprises six controllable inductor modules connected in series. Each controllable inductor module consists of a switch submodule and an inductor submodule connected in parallel. Each inductor submodule includes one inductor, and each switch module includes one switch transistor. The capacitor branch unit comprises nine controllable capacitor modules connected in parallel. Each controllable capacitor module consists of a switch submodule and a capacitor submodule connected in series. Each inductor submodule includes one capacitor, and each switch module includes one switch transistor. All inductor submodules in the inductor branch unit are sorted by their equivalent inductance values ​​from smallest to largest, i.e., L... 1_1 ~L 1_6 The values ​​increase sequentially, and the first half of the capacitor sub-modules and the remaining half of the capacitor sub-modules are arranged alternately to form a series of alternating reactance sub-modules with small reactance values ​​and large reactance values.

[0076] For example, please refer to Figure 6CThe circuit diagram shown is for the third type of the fifth impedance matching array. This impedance matching array consists of one inductor branch unit and one capacitor branch unit. The inductor branch unit comprises six controllable inductor modules connected in series. Each controllable inductor module consists of a switch submodule and an inductor submodule connected in parallel. Each inductor submodule includes one inductor, and each switch module includes one switch transistor. The capacitor branch unit comprises nine controllable capacitor modules connected in parallel. Each controllable capacitor module consists of a switch submodule and a capacitor submodule connected in series. Each inductor submodule includes one capacitor, and each switch module includes one switch transistor. All inductor submodules in the inductor branch unit are sorted by their equivalent inductance values ​​from smallest to largest, i.e., L... 1_1 ~L 1_6 The values ​​increase sequentially, and the first half of the capacitor sub-modules and the remaining half of the capacitor sub-modules are arranged alternately to form a series of alternating reactance sub-modules with small reactance values ​​and large reactance values.

[0077] For example, please refer to Figure 7A The circuit diagram shown is for the first type of the sixth type of impedance matching array. This impedance matching array consists of one inductor branch unit and one capacitor branch unit. The inductor branch unit comprises seven controllable inductor modules connected in series. Each controllable inductor module consists of a switch submodule and an inductor submodule connected in parallel. Each inductor submodule includes one inductor, and each switch submodule includes one switch transistor. The capacitor branch unit comprises seven controllable capacitor modules connected in parallel. Each controllable capacitor module consists of a switch submodule and a capacitor submodule connected in series. Each inductor submodule includes one capacitor, and each switch submodule includes one switch transistor. All capacitor submodules in the capacitor branch unit are sorted by their equivalent capacitance values ​​from smallest to largest, i.e., C. 1_1 ~C 1_7 The values ​​increase sequentially, and are arranged in ascending order on the circuit and PCB.

[0078] For example, please refer to Figure 7BThe circuit diagram shown is for the second type of the sixth type of impedance matching array. This impedance matching array consists of one inductor branch unit and one capacitor branch unit. The inductor branch unit comprises seven controllable inductor modules connected in series. Each controllable inductor module consists of a switch submodule and an inductor submodule connected in parallel. Each inductor submodule includes one inductor, and each switch submodule includes one switch transistor. The capacitor branch unit comprises seven controllable capacitor modules connected in parallel. Each controllable capacitor module consists of a switch submodule and a capacitor submodule connected in series. Each inductor submodule includes one capacitor, and each switch submodule includes one switch transistor. All capacitor submodules in the capacitor branch unit are sorted by their equivalent capacitance value from smallest to largest, i.e., C. 1_1 ~C 1_7 The values ​​increase sequentially, and the first half of the capacitor sub-modules and the remaining half of the capacitor sub-modules are arranged alternately to form a series of alternating reactance sub-modules with small reactance values ​​and large reactance values.

[0079] For example, please refer to Figure 7C The circuit diagram shown is for the third type of the sixth type of impedance matching array. This impedance matching array consists of one inductor branch unit and one capacitor branch unit. The inductor branch unit comprises seven controllable inductor modules connected in series. Each controllable inductor module consists of a switch submodule and an inductor submodule connected in parallel. Each inductor submodule includes one inductor, and each switch submodule includes one switch transistor. The capacitor branch unit comprises seven controllable capacitor modules connected in parallel. Each controllable capacitor module consists of a switch submodule and a capacitor submodule connected in series. Each inductor submodule includes one capacitor, and each switch submodule includes one switch transistor. All capacitor submodules in the capacitor branch unit are sorted by their equivalent capacitance value from smallest to largest, i.e., C. 1_1 ~C 1_7 The values ​​increase sequentially. The first half of the capacitor submodules are alternately arranged with the remaining half, forming an alternating arrangement of small and large reactance submodules. That is, the 7 capacitors are arranged from smallest to largest as C1...C7. The first 3 capacitors are arranged sequentially, and then the last 3 capacitors are inserted in between them sequentially, that is, from left to right, they are C4, C1, C5, C2, C6, C3, C7. The arrangement can also be reversed.

[0080] In one embodiment, please refer to Figures 8A to 8G The impedance matching array structure consists of an α-type structure composed of two reactance branch units; or an L-type structure composed of two reactance branch units; or a T-type structure composed of three reactance branch units; or a π-type structure composed of three reactance branch units.

[0081] For example, please refer to Figure 8E The diagram shows a typical circuit diagram of an α-type structure composed of two reactance branch units. This impedance matching array consists of one inductance branch unit and one capacitor branch unit. The inductance branch unit comprises seven controllable inductor modules connected in series. Each controllable inductor module consists of a switch submodule and an inductor submodule connected in parallel. Each inductor submodule includes one inductor, and each switch submodule includes one switch transistor. The capacitor branch unit comprises nine controllable capacitor modules connected in parallel. Each controllable capacitor module consists of a switch submodule and a capacitor submodule connected in series. Each inductor submodule includes one capacitor, and each switch module includes one switch transistor.

[0082] For example, please refer to Figure 8F The diagram shows a typical T-shaped structure consisting of three reactance branch units. This impedance matching array comprises two inductance branch units and one capacitor branch unit. Each inductance branch unit consists of three controllable inductor modules connected in series. Each controllable inductor module consists of a switch submodule and an inductor submodule connected in parallel. Each inductor submodule includes one inductor, and each switch submodule includes one switch transistor. The capacitor branch unit consists of nine controllable capacitor modules connected in parallel. Each controllable capacitor module consists of a switch submodule and a capacitor submodule connected in series. Each inductor submodule includes one capacitor, and each switch module includes one switch transistor.

[0083] For example, please refer to Figure 8G The diagram shows a typical circuit diagram of a π-type structure composed of three reactance branch units. This impedance matching array consists of one inductance branch unit and two capacitor branch units. Each inductance branch unit comprises three controllable inductor modules connected in series. Each controllable inductor module consists of a switch submodule and an inductor submodule connected in parallel. Each inductor submodule includes one inductor, and each switch submodule includes one switch transistor. Each capacitor branch unit consists of nine controllable capacitor modules connected in parallel. Each controllable capacitor module consists of a switch submodule and a capacitor submodule connected in series. Each inductor submodule includes one capacitor, and each switch module includes one switch transistor.

[0084] Furthermore, based on the foregoing embodiments, when the impedance matching parameter configuration method and impedance matching array of this application are applied to power supply products, an RF power supply system can be generated, including an RF power supply and a matching unit. The matching unit adopts the impedance matching array of the foregoing embodiments. By controlling the measured equivalent reactance of each reactance branch unit, the impedance matching unit can achieve continuous impedance adjustment within the allowable error range of the nominal index. By controlling the switching transistors of each switching submodule in the impedance matching array structure, the impedance value of the impedance matching array is adjusted to perform impedance matching.

[0085] In one embodiment, a plasma radio frequency (RF) system is provided, including an RF power supply, a matching unit, and a cavity load connected in sequence. The matching unit includes the impedance matching array described in the previous embodiment. When the cavity load changes due to process operation, the switching transistors of each switching submodule in the impedance matching array are controlled according to the load change to adjust the impedance value of the impedance matching array for impedance matching. This allows the matching unit to move towards and stabilize the impedance of the cavity load towards a standard value. Utilizing the impedance matching array and matching unit parameter configuration method of this application helps to improve the matching speed of the impedance matching unit in the plasma RF system, ensure matching accuracy, and reduce the cost of the matching unit.

[0086] Therefore, this application controls the measured equivalent reactance of each reactance branch unit through the provided impedance matching array parameter configuration method, ensuring that the impedance matching array can achieve continuous impedance adjustment within a certain error range, with low cost and fast matching speed; it can match the target load to a standard load with low reflected power. Essentially, this application achieves continuous adjustment of the equivalent reactance values ​​of the inductor and capacitor branch units in the matching array within an allowable error range, solving the problem of excessive reflected power caused by the matching array's inability to match. Testing and verification show that the impedance matching array using the impedance matching array parameter configuration method of this application can match the load to a standard impedance value of around 50Ω, and the reflected power can be controlled within 3W. The range of the load is usually determined by the parameter range of the matching network; that is, once the parameter range of the matching network is determined, the corresponding range of loads can be matched to a standard impedance of 50Ω.

[0087] The above are merely optional embodiments of this application and are not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A method for configuring impedance matching parameters, used to continuously adjust the equivalent impedance values ​​of several impedance sub-modules in an impedance matching array and the reactive branch units composed of the impedance sub-modules within the allowable error range of the nominal specifications, characterized in that, Each of the aforementioned reactance branch units includes at least three impedance sub-modules; The impedance submodule is an inductive submodule with inductive impedance characteristics. The parameter configuration rule for the impedance matching nominal index of the corresponding reactance branch unit, which is continuously adjustable within the allowable error range, is as follows: The equivalent inductance value measured when the (n+1)th inductor submodule of the tested reactor branch unit is connected alone is greater than or equal to the equivalent inductance value measured when the nth inductor submodule of the same reactor branch unit is connected alone. Furthermore, the equivalent inductance value measured when the (n+1)th inductor submodule of the tested reactor branch unit is connected alone is less than or equal to the sum of the equivalent inductance value measured when the first n inductor submodules of the same reactor branch unit are connected in series and the first compensation constant value of the impedance. Furthermore, the equivalent inductance value measured when the first n inductor submodules of the tested reactor branch unit are connected in series is less than or equal to the equivalent inductance value measured when the first n+1 inductor submodules of the same reactor branch unit are connected in series.

2. The impedance matching device parameter configuration method according to claim 1, characterized in that, The parameter configuration rules also include: The equivalent inductance value measured when the (n+1)th inductor submodule of the tested reactor branch unit is connected alone is greater than or equal to the sum of the equivalent inductance value measured when the first n inductor submodules of the same reactor branch unit are connected in series and the third compensation constant value of the impedance, wherein the third compensation constant value is less than or equal to the first compensation constant value.

3. The impedance matching device parameter configuration method according to claim 2, characterized in that, The first compensation constant value and the third compensation constant value are arbitrary real numbers.

4. The impedance matching device parameter configuration method according to claim 1, characterized in that, The first compensation constant value of the impedance is the compensation inductance value, which ranges from -15nH to 15nH.

5. The impedance matching device parameter configuration method according to claim 1, characterized in that, The inductor submodule is composed of several switching devices, inductors and / or several capacitors connected in series, parallel or interleaved, and the overall impedance characteristic of the module is inductive.

6. A method for configuring impedance matching parameters, used to continuously adjust the equivalent impedance values ​​of several impedance sub-modules in an impedance matching array and the reactive branch units composed of the impedance sub-modules within the allowable error range of the nominal specifications, characterized in that, Each of the aforementioned reactance branch units includes at least three impedance sub-modules; The impedance submodule is a capacitive submodule with capacitive impedance characteristics. The parameter configuration rule for the impedance matching nominal index of the corresponding reactance branch unit, which is continuously adjustable within the allowable error range, is as follows: The equivalent capacitance value measured when the (n+1)th capacitor submodule of the tested reactor branch unit is connected alone is greater than or equal to the equivalent capacitance value measured when the nth capacitor submodule of the same reactor branch unit is connected alone. Furthermore, the equivalent capacitance value measured when the (n+1)th capacitor submodule of the tested reactor branch unit is connected alone is less than or equal to the sum of the equivalent capacitance value measured when the first n capacitor submodules of the same capacitor branch unit are connected in parallel and the second compensation constant value of the impedance. Furthermore, the equivalent capacitance value measured when the first n capacitor sub-modules of the tested reactor branch unit are connected in parallel is less than or equal to the equivalent capacitance value measured when the first n+1 capacitor sub-modules of the same reactor branch unit are connected in parallel.

7. The impedance matching device parameter configuration method according to claim 6, characterized in that, The parameter configuration rules also include: The equivalent capacitance value measured when the (n+1)th capacitor submodule of the tested reactance branch unit is connected alone is greater than or equal to the sum of the equivalent capacitance value measured when the first n capacitor submodules of the same capacitor branch unit are connected in parallel and the fourth compensation constant value of the impedance, wherein the fourth compensation constant value is less than or equal to the second compensation constant value.

8. The impedance matching device parameter configuration method according to claim 7, characterized in that, The second compensation constant value and the fourth compensation constant value are arbitrary real numbers.

9. The impedance matching device parameter configuration method according to claim 6, characterized in that, The second compensation constant value of the impedance is the compensation capacitor value, which ranges from -15pF to 15pF.

10. The impedance matching device parameter configuration method according to claim 6, characterized in that, The capacitor submodule is composed of several switching devices, inductors and / or several capacitors connected in series, parallel or interleaved, and the overall impedance characteristic of the module is capacitive.

11. An impedance matching array, characterized in that, The impedance matching array uses the impedance matching device parameter configuration method according to any one of claims 1 to 10 to obtain the matching equivalent parameters of each impedance device, so as to realize the impedance matching device is continuously adjustable within the allowable error range of the nominal index.

12. The impedance matching array according to claim 11, characterized in that, The impedance matching array is arranged in order of increasing reactance value, with the first half of the impedance sub-modules alternating with the second half. This results in a sequence of alternating low-reactance and high-reactance impedance sub-modules. The adjustable parameters of the reactance branch unit are continuously adjustable within the allowable error range by utilizing the complementary index margins between the impedance sub-modules.

13. The impedance matching array according to claim 11, characterized in that, The reactance branch unit includes an inductance branch unit and / or a capacitor branch unit; The inductor branch unit includes at least three controllable inductor modules. Each controllable inductor module is composed of an inductor submodule and a switch submodule connected in parallel, and each controllable inductor module is connected in series. The capacitor branch unit includes at least three controllable capacitor modules. Each controllable capacitor module is composed of a capacitor sub-module and a switch sub-module connected in series, and the capacitor sub-modules are connected in parallel.

14. The impedance matching array according to claim 11, characterized in that, The reactance branch unit includes an inductance branch unit and / or a capacitor branch unit; The inductor branch unit includes at least three controllable inductor modules with identical structures. Each controllable inductor module is composed of an inductor submodule and a switch submodule connected in parallel, and each inductor submodule is connected in series. The capacitor branch unit includes at least three controllable capacitor modules with identical structures. Each controllable capacitor module is composed of a capacitor sub-module and a switch sub-module connected in series, and the capacitor sub-modules are connected in parallel.

15. The impedance matching array according to claim 11, characterized in that, The impedance matching array is configured as an α-type structure with two reactance branch units; or as an L-type structure with two reactance branch units; or as a T-type structure with three reactance branch units; or as a π-type structure with three reactance branch units.

16. A radio frequency power supply system, comprising a radio frequency power supply and a matching unit, characterized in that, The matching unit includes the impedance matching array according to any one of claims 11 to 15; By controlling the equivalent reactance of each reactance branch unit, the impedance matching device can achieve continuous impedance adjustment within the allowable error range of the nominal index. By controlling the switching transistors of each switching submodule in the impedance matching array, the impedance value of the impedance matching array is adjusted to perform impedance matching.

17. A plasma radio frequency system, comprising a radio frequency power supply, a matching unit, and a cavity load connected in sequence, characterized in that, The matching unit includes the impedance matching array according to any one of claims 11 to 15; When the cavity load changes due to process operation, the switching transistors of each switching submodule in the impedance matching array are controlled according to the load change, and the impedance value of the impedance matching array is adjusted to perform impedance matching, so that the matching device, combined with the impedance of the cavity load, moves toward the standard value and tends to stabilize.

Images