A CMOS integrated circuit instantaneous photoelectric current detection bleeder circuit

Abstract

The application discloses a CMOS integrated circuit instantaneous photoelectric current detection discharge circuit, which comprises a discharge unit and a detection unit, wherein the discharge unit comprises a PMOS discharge transistor, and the detection unit adopts a PMOS source follower; a gate of the PMOS discharge transistor is connected to an output end of the PMOS source follower, a source of the PMOS discharge transistor is connected to an output end of an integrated circuit to be reinforced, and a drain is directly connected to the ground; when a body voltage collapses due to photoelectric current generated in the integrated circuit under radiation, the source follower responds and turns on the PMOS discharge transistor, thereby providing a rapid discharge path for the photoelectric current to the ground. The application has the advantages of simple structure, better stability, stronger anti-interference capability and the like.

Description

Technical Field

[0001] This invention mainly relates to the field of radiation-resistant chip research and development technology, and is applicable to radiation hardening of CMOS integrated circuits in high-radiation environments such as aerospace and nuclear energy. Specifically, it refers to a CMOS integrated circuit instantaneous photocurrent detection and discharge circuit. Background Technology

[0002] The photocurrent effect generated by transient strong gamma-ray radiation is one of the key reliability challenges faced by electronic systems, especially integrated circuits used in space, nuclear energy and other high-radiation environments.

[0003] When semiconductor devices are exposed to high-intensity transient gamma radiation, a large number of electron-hole pairs are instantaneously generated, forming a significant transient photocurrent pulse. This transient photocurrent pulse can cause voltage collapse at circuit nodes, logic state flipping, and even permanent damage to devices, severely affecting the normal function of the circuit and the stability of the system. Specifically, analog amplifiers experience operating point drift, drastic output voltage fluctuations, and signal distortion; PMOS current mirror bias voltage collapses, output bias current deviates significantly, and back-end circuits fail; continuous large photocurrents cause PN junction thermal breakdown, permanent damage to the gate oxide layer, and permanent chip failure.

[0004] Traditional technical solutions typically employ the following methods: Passive RC / resistor bleeder branch; a fixed bleeder resistor and RC absorption network are connected in parallel to ground at the sensitive output node; however, it is statically continuously conducting, with a large leakage current under normal conditions, which increases the static power consumption of the chip; the response speed is slow, and the RC charging and discharging delay cannot match the nanosecond-level instantaneous gamma pulse; under radiation environment, the resistor itself generates photogenerated charge, which aggravates the node voltage disturbance and has poor anti-interference.

[0005] The NMOS source follower detection circuit uses an NMOS source follower to monitor the node voltage and drive the discharge transistor. However, since the drain of the NMOS transistor is connected to the power supply, a large amount of photocurrent is generated in the drain region during irradiation. The detection branch itself is subject to radiation interference, resulting in a high probability of false triggering / failure. An additional bias current is required to keep the NMOS on, resulting in high power consumption. The body effect is severe, the voltage tracking linearity is poor, and the body voltage collapse detection sensitivity is low.

[0006] The comparator actively monitors the discharge architecture; it uses an operational comparator to compare the node voltage with the reference voltage in real time to trigger the discharge path; however, the comparator contains multiple stages of amplifier transistors and a bias bandgap reference, resulting in a large number of components and a large layout area, which is not conducive to small-scale analog circuit integration; under irradiation, the transistors inside the comparator simultaneously generate instantaneous photocurrents, causing the reference voltage to drift and the detection logic to fail; the circuit loop is complex, the transient response delay is high, and it cannot capture narrow pulse photocurrents.

[0007] SCR, TVS and other ESD clamping devices; using thyristors and transient suppression diodes for node clamping and discharge; however, the trigger voltage is fixed and too high, which cannot match the weak detection requirements of the slight collapse of the PMOS body voltage; there is a latch-up effect after conduction, and it cannot be automatically turned off after the radiation disappears, continuously consuming power supply energy; the device has large parasitic capacitance, which degrades the bandwidth and noise performance of analog circuits.

[0008] In summary, the problem with the aforementioned traditional technical solutions lies in: The detection unit itself has weak radiation resistance, and the detection logic is distorted under irradiation, making it unable to accurately identify body voltage collapse; under normal conditions, there is additional leakage current and high static power consumption, which damages the original electrical characteristics of the main circuit.

[0009] The circuit topology is complex, the number of components is large, and the layout occupies a large area, which is not conducive to on-chip integration; the response speed is insufficient, and the nanosecond-level gamma photocurrent pulse cannot be discharged quickly, so there is still a risk of device damage.

[0010] It has poor versatility and cannot be simultaneously adapted to two mainstream analog core units: common-source cascode amplifiers and PMOS current mirrors. Summary of the Invention

[0011] The technical problem to be solved by the present invention is as follows: In view of the technical problems existing in the prior art, the present invention provides a CMOS integrated circuit instantaneous photocurrent detection and discharge circuit with simple structure, better stability and stronger anti-interference ability. The circuit can stably and quickly detect and discharge photocurrent in a strong instantaneous radiation environment, thereby effectively maintaining the working state of the protected integrated circuit, while the impact on the performance of the protected integrated circuit under normal working conditions without radiation interference is negligible.

[0012] To achieve the above objectives, the present invention adopts the following technical solution: A CMOS integrated circuit instantaneous photocurrent detection and discharge circuit includes a discharge unit and a detection unit. The discharge unit includes a PMOS discharge transistor, and the detection unit employs a PMOS source follower. The gate of the PMOS discharge transistor is connected to the output terminal of the PMOS source follower, the source of the PMOS discharge transistor is connected to the output terminal of the integrated circuit to be hardened, and the drain is directly connected to ground. When the photocurrent generated in the integrated circuit causes a body voltage collapse, the source follower responds and turns on the PMOS discharge transistor, providing a fast discharge path to ground for the photocurrent.

[0013] As a further improvement of the present invention: the PMOS source follower includes: a PMOS transistor P1 and a resistor R1, the drain of the PMOS transistor P1 is directly connected to ground, the gate of the PMOS transistor P1 is connected to the body terminal of the integrated circuit to be hardened; the source of the PMOS transistor P1 and one end of the resistor R1 are connected to the gate of the discharge unit, and the other end of the resistor R1 is connected to the power supply.

[0014] As a further improvement of the present invention: the integrated circuit to be hardened is a common-source common-gate amplifier, the source of the PMOS discharge transistor is connected to the output terminal of the common-source common-gate amplifier, and the drain is directly connected to ground.

[0015] As a further improvement of the present invention: when the photocurrent generated by the transient radiation interferes with M1 of the common source cascode amplifier, the body voltage of M1 collapses, causing A1 in the detection discharge circuit to drop accordingly, thereby turning on the discharge transistor and accelerating the discharge of the photocurrent generated in M1 by the transient radiation; in the absence of transient radiation, the voltage difference between A1 and VOUT in the detection discharge circuit is lower than the threshold voltage of the discharge transistor, causing the discharge transistor to turn off.

[0016] As a further improvement of the present invention: the integrated circuit to be hardened is a PMOS current mirror, the gate of the PMOS discharge transistor is connected to the output terminal of the PMOS source follower, the source of the PMOS discharge transistor is connected to the output terminal of the PMOS current mirror, and the drain is directly connected to ground.

[0017] As a further improvement of the present invention: the gate of the PMOS transistor P1 is connected to the body terminal of the PMOS current mirror to detect the change of the PMOS current mirror body voltage Vb_mirror; the source of the PMOS transistor P1 and one end of the resistor R1 are connected to the gate of the discharge unit, and the other end of the resistor R1 is connected to the power supply.

[0018] As a further improvement of the present invention: when the photocurrent generated by the instantaneous radiation interferes with the PMOS current mirror, its body voltage Vb_mirror collapses, causing A1 in the detection discharge circuit to drop accordingly, thereby turning on the discharge transistor, accelerating the discharge of the photocurrent generated by the instantaneous radiation in the PMOS current mirror, so that the current mirror bias voltage VP1 can quickly recover and stabilize, thereby stabilizing the current mirror output current Ibias.

[0019] As a further improvement of the present invention: a multi-channel PMOS switch is used to connect the body terminals of multiple PMOS devices to the gate of the same PMOS transistor P1 in a time-division manner, and a set of detection units is matched with a multi-channel amplifier / current mirror.

[0020] As a further improvement of the present invention, the discharge unit is made up of multiple groups of PMOS transistors with varying aspect ratios connected in parallel, and each group of gates is connected in series with different voltage divider resistors to achieve graded conduction; small photocurrents only turn on small-sized discharge transistors, while large photocurrents turn on all transistors.

[0021] As a further improvement of the present invention, it also includes an irradiation status indication output branch, in which a buffer NMOS transistor is added to the source of the PMOS transistor P1, and a digital indication pin is brought out.

[0022] Compared with the prior art, the advantages of the present invention are as follows: 1. The CMOS integrated circuit instantaneous photocurrent detection and discharge circuit of this invention has a simple structure, better stability, and stronger anti-interference capability. The circuit includes a PMOS source follower detection unit composed of a PMOS transistor and a resistor, and a discharge transistor. Under the influence of instantaneous strong gamma radiation, the photocurrent generated in the integrated circuit will cause the body voltage of the common-source common-gate amplifier bias transistor and the PMOS current mirror to collapse. At this time, the source follower, as the detection circuit, will quickly respond and turn on the discharge transistor, providing a fast discharge path to ground for the photocurrent, thereby stabilizing the amplifier operating point and the current mirror output current. During normal operation without radiation, the discharge transistor is off, and the impact of this circuit on the performance of the integrated circuit is negligible. This invention utilizes the structural advantages of PMOS drain grounding and passive resistor biasing to significantly improve the stability and anti-interference capability of the integrated circuit in a strong radiation environment, and has the advantages of fast response, simple structure, and easy integration.

[0023] 2. The CMOS integrated circuit instantaneous photocurrent detection and discharge circuit of this invention is a photocurrent detection and discharge circuit that can maintain high stability and fast response characteristics under harsh instantaneous radiation environments. This circuit must possess a core detection mechanism that is insensitive to radiation interference, ensuring accurate and rapid triggering of the current discharge path when a radiation pulse arrives; simultaneously, under normal operating conditions without radiation, its impact on the performance of the protected main circuit should be negligible, thereby achieving an optimal balance between protection function and normal operating performance.

[0024] 3. The CMOS integrated circuit instantaneous photocurrent detection and discharge circuit of the present invention is an instantaneous photocurrent detection and discharge circuit with a very simple structure, strong irradiation stability, no additional loss under normal conditions, nanosecond-level fast discharge, and compatibility with a variety of analog sensitive circuits; it can accurately detect the body voltage collapse and quickly discharge the photocurrent during irradiation, and completely shut off the discharge branch when there is no radiation, without affecting the performance of the main circuit. Attached Figure Description

[0025] Figure 1 This is a schematic diagram of the application of the present invention to a ruggedized common-source cascode amplifier.

[0026] Figure 2This is a schematic diagram of the application of the present invention to a hardened PMOS current mirror; wherein, Figure 2 In the diagram, (a) represents the hardened bias circuit. Figure 2 (b) in the diagram represents the photocurrent detection and discharge circuit.

[0027] Figure 3 This is a schematic diagram illustrating the effect of transient photocurrent on a common-source, common-gate amplifier in a specific application example of the present invention.

[0028] Figure 4 This is a schematic diagram illustrating the effect of instantaneous photocurrent on the PMOS current mirror in a specific application example of the present invention.

[0029] Figure 5 This is a schematic diagram illustrating the detection of the discharge circuit response in a specific application example of the present invention.

[0030] Figure 6 This is a schematic diagram illustrating the reinforcement effect of the present invention on a common-source cascode amplifier in a specific application example.

[0031] Figure 7 This is a schematic diagram illustrating the reinforcement effect of the PMOS current mirror in a specific application example of the present invention. Detailed Implementation

[0032] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0033] In the description of this application, it should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0034] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0035] In this application, unless otherwise expressly specified and limited, the terms "assembly," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0036] Example 1: As Figure 1 , Figure 3 , Figure 5 , Figure 6 As shown, this invention discloses a CMOS integrated circuit instantaneous photocurrent detection and discharge circuit, applied to strengthen a common-source common-gate amplifier. It includes a discharge unit and a detection unit. The discharge unit includes a PMOS discharge transistor, and the detection unit employs a PMOS source follower. The gate of the PMOS discharge transistor is connected to the output terminal of the PMOS source follower, the source of the PMOS discharge transistor is connected to the output terminal of the common-source common-gate amplifier, and the drain is directly connected to ground. The PMOS source follower includes a PMOS transistor P1 and a resistor R1. The drain of the PMOS transistor P1 is directly connected to ground, and the gate of the PMOS transistor P1 is connected to the body terminal of transistor M1 in the common-source common-gate amplifier. The source of the PMOS transistor P1 and one end of the resistor R1 are connected to the gate of the discharge unit, and the other end of the resistor R1 is connected to the power supply.

[0037] When the photocurrent generated by transient radiation interferes with M1 of the cascode amplifier, the body voltage of M1 collapses, causing A1 in the detection circuit to drop accordingly. This, in turn, turns on the discharge transistor, accelerating the discharge of the photocurrent generated by the transient radiation in M1. In the absence of transient radiation, the voltage difference between A1 and VOUT in the detection circuit is lower than the threshold voltage of the discharge transistor, causing the discharge transistor to turn off. Consequently, the presence of the detection and discharge circuit can be ignored during normal operation of the cascode amplifier.

[0038] As can be seen from the above, by using a PMOS source follower, the present invention has the following technical effects: 1. The drain of P1 is directly connected to ground, and it can quickly discharge current under transient radiation, so the transient radiation has little effect on it.

[0039] 2. For NMOS transistors using bias voltage, the effect of transient radiation on resistor R1 is relatively small.

[0040] The above two advantages demonstrate that the detection circuit has good stability under transient radiation and can still maintain correct photocurrent detection and discharge functions even in harsh transient radiation environments.

[0041] Example 2: As Figure 2 , Figure 4 , Figure 5 , Figure 7 As shown, this invention discloses a CMOS integrated circuit instantaneous photocurrent detection and discharge circuit for strengthening a PMOS current mirror. It includes a discharge unit and a detection unit. The discharge unit includes a PMOS discharge transistor, and the detection unit employs a PMOS source follower. The gate of the PMOS discharge transistor is connected to the output terminal of the PMOS source follower, the source of the PMOS discharge transistor is connected to the output terminal of the PMOS current mirror, and the drain is directly connected to ground. The PMOS source follower includes a PMOS transistor P1 and a resistor R1. The drain of the PMOS transistor P1 is directly connected to ground, and the gate of the PMOS transistor P1 is connected to the body terminal of the PMOS current mirror to detect changes in the PMOS current mirror body voltage Vb_mirror. The source of the PMOS transistor P1 and one end of the resistor R1 are connected to the gate of the discharge unit, and the other end of the resistor R1 is connected to a power supply.

[0042] When the photocurrent generated by transient radiation interferes with the PMOS current mirror, its body voltage Vb_mirror collapses, causing A1 in the detection circuit to drop accordingly. This, in turn, turns on the discharge transistor, accelerating the discharge of the photocurrent generated by transient radiation in the PMOS current mirror. This allows the current mirror bias voltage VP1 to quickly recover and stabilize, thereby stabilizing the current mirror output current Ibias.

[0043] See Figure 5 This is a schematic diagram illustrating the reinforcement effect of the instantaneous photocurrent detection discharge circuit. Figure 5 Chinese V gs1 for Figure 1 In a PMOS source follower, the gate-source voltage V of PMOS P1 A1 -V body and Figure 2 (b) Gate-source voltage V of PMOS P1 in the PMOS source follower A1 -V mirror I SET for Figure 1 and Figure 2 (b) Source-drain current I when the discharge transistor is turned on SET The instantaneous photocurrent detection and discharge circuit of the present invention turns on the discharge transistor after detecting the body voltage collapse of the hardened circuit, adding a path from the hardened node to ground, so that the instantaneous photocurrent pulse is discharged quickly, ultimately reducing the output voltage fluctuation of the cascode amplifier and the output current fluctuation of the PMOS current mirror.

[0044] Furthermore, as a preferred embodiment, the present invention can also employ a multi-channel PMOS switch, connecting multiple groups of PMOS devices to the same P1 gate in a time-division multiplexing manner, with one detection unit matched with a multi-channel amplifier / current mirror. This significantly reduces the overall number of devices on the chip, lowers the layout area and static power consumption, making it suitable for large-scale multi-channel analog front-end chips.

[0045] Furthermore, as a preferred embodiment, the present invention can also make the discharge unit consist of multiple groups of PMOS transistors with varying aspect ratios connected in parallel, with different voltage divider resistors connected in series at the gate of each group, to achieve graded conduction: small photocurrents only turn on small-sized discharge transistors, while ultra-large photocurrents turn on all transistors. This can balance normal turn-off characteristics with high current discharge capability, and avoid the parasitic capacitance caused by a single large-sized discharge transistor, which degrades the analog bandwidth.

[0046] Furthermore, as a preferred embodiment, the present invention can also add an irradiation status indication output branch by adding a buffer NMOS transistor at the source of P1 and bringing out a digital indication pin. This enables the output of high / low levels to the on-chip digital logic when irradiation triggers discharge, achieving real-time recording of radiation events and system fault self-checking, thus meeting the health management requirements of aerospace chips.

[0047] Furthermore, as a preferred embodiment, the present invention can also add an RC filter network to the detection branch to suppress high-frequency electromagnetic interference. That is, an RC low-pass filter is formed by connecting a current-limiting resistor in series with the P1 gate (body detection terminal) and a small capacitor connected to ground in parallel. This can filter out instantaneous spikes in the body voltage caused by spatial electromagnetic pulses and power supply high-frequency noise, and only respond to millisecond / nanosecond level gamma photocurrent pulses, thereby improving electromagnetic compatibility performance.

[0048] Furthermore, as a preferred embodiment, the present invention can also connect the bleeder diodes in parallel with a multi-size PMOS array for graded discharge. That is, the bleeder unit consists of multiple sets of PMOS diodes with varying aspect ratios connected in parallel, with each set having a gate connected in series with a different voltage divider resistor, achieving graded conduction: small photocurrents only turn on small-size bleeder diodes, while ultra-large photocurrents turn on all diodes. This balances normal turn-off characteristics with high current discharge capability, avoiding the parasitic capacitance caused by a single large-size bleeder diode that degrades the analog bandwidth.

[0049] In summary, the core principle of this invention lies in the fact that under the influence of instantaneous strong gamma radiation, the photocurrent generated in the integrated circuit will cause the body voltage of the common-source cascode amplifier bias transistor and the PMOS current mirror to collapse. At this time, the source follower, acting as a detection circuit, will quickly respond and turn on the discharge transistor, providing a fast discharge path to ground for the photocurrent, thereby stabilizing the amplifier operating point and the current mirror output current. During normal operation without radiation, the discharge transistor is off, and the impact of this circuit on the integrated circuit performance is negligible.

[0050] The core innovation of this invention lies in: This invention pioneers the use of a drain-grounded PMOS source follower as the core of radiation detection. Existing source follower detection schemes all connect the drain of the input transistor to the power supply, resulting in a large amount of photogenerated charge in the drain region during irradiation, which interferes with the detection level. This invention directly grounds the drain of the detection transistor P1, allowing the photocurrent generated by irradiation to flow directly to ground, without raising / biasing the gate-source potential of P1. The detection branch itself is not affected by radiation interference, significantly improving detection stability under extreme irradiation. At the same time, it uses only one MOS transistor and one resistor, minimizing the number of components and simplifying the topology.

[0051] A passive resistor R1 is used for pull-up biasing, replacing the active bias circuit. Existing detection circuits rely on multiple MOSFETs to provide static bias, which drifts under irradiation. This invention uses only a single resistor R1 to achieve normal gate pull-up. The radiation sensitivity of passive devices is much lower than that of active MOSFET devices. There is no additional bias current, and the normal power consumption is almost zero. At the same time, R1 limits the maximum potential of the P1 source, accurately controlling the normal turn-off of the bleeder.

[0052] This invention uses the PMOS device body voltage collapse as the photocurrent detection criterion. Existing hardened circuits directly monitor the output node voltage, which cannot distinguish between normal signal fluctuations and irradiated photocurrent. This invention directly acquires the PMOS body terminal potential. Body voltage collapse is a unique characteristic signal of instantaneous photocurrent, which is not coupled with the normal signal of the circuit, thus eliminating false triggering. This enables early prediction and early discharge of weak photocurrent.

[0053] The single PMOS transistor features a low on-resistance and automatic turn-off. The source of the transistor is connected to the sensitive output, and the drain is directly grounded. Upon turn-on, it forms an extremely low-impedance discharge channel, releasing photocurrent pulses on the order of nanoseconds. After the radiation dissipates, the body voltage recovers, the source potential of P1 rises, and the gate-source voltage difference of the transistor falls below the threshold, automatically turning it off without latch-up or continuous losses. In contrast, passive resistor discharge provides complete turn-off under normal conditions, no continuous leakage current, and does not affect the gain, noise, or bandwidth of analog circuits.

[0054] This invention provides a unified topology compatible with both common-source cascode amplifiers and PMOS current mirrors, two core analog units. Existing ruggedized circuits can only be customized for single circuits, resulting in poor versatility. This invention only requires switching the body terminal connected to the P1 gate and the output node connected to the source of the bleeder to adapt to different PMOS analog circuits. A single detection and bleeder architecture can be reused, reducing chip design and layout development costs.

[0055] The above description is merely a preferred embodiment of the present invention and does not limit the patent scope of the present invention. All equivalent designs made using the contents of the present invention's specification and drawings under the inventive concept of the present invention, or direct / indirect applications in other related technical fields, are included within the patent protection scope of the present invention.

Claims

1. A CMOS integrated circuit instantaneous photocurrent detection and discharge circuit, characterized in that, The device includes a discharge unit and a detection unit. The discharge unit includes a PMOS discharge transistor, and the detection unit uses a PMOS source follower. The gate of the PMOS discharge transistor is connected to the output terminal of the PMOS source follower, the source of the PMOS discharge transistor is connected to the output terminal of the integrated circuit to be hardened, and the drain is directly connected to ground. When the photocurrent generated by radiation in the integrated circuit causes the body voltage to collapse, the source follower responds and turns on the PMOS discharge transistor, providing a fast discharge path to ground for the photocurrent.

2. The CMOS integrated circuit instantaneous photocurrent detection and discharge circuit according to claim 1, characterized in that, The PMOS source follower includes a PMOS transistor P1 and a resistor R1. The drain of the PMOS transistor P1 is directly connected to ground, and the gate of the PMOS transistor P1 is connected to the body terminal of the integrated circuit to be hardened. The source of the PMOS transistor P1 and one end of the resistor R1 are connected to the gate of the bleeder unit, and the other end of the resistor R1 is connected to the power supply.

3. The CMOS integrated circuit instantaneous photocurrent detection and discharge circuit according to claim 2, characterized in that, The integrated circuit to be hardened is a common-source common-gate amplifier. The source of the PMOS discharge transistor is connected to the output terminal of the common-source common-gate amplifier, and the drain is directly connected to ground.

4. The CMOS integrated circuit instantaneous photocurrent detection and discharge circuit according to claim 3, characterized in that, When the photocurrent generated by transient radiation interferes with M1 of the cascode amplifier, the body voltage of M1 collapses, causing A1 in the detection discharge circuit to drop accordingly, thereby turning on the discharge transistor and accelerating the discharge of the photocurrent generated by the transient radiation in M1. In the absence of transient radiation, the voltage difference between A1 and VOUT in the detection discharge circuit is lower than the threshold voltage of the discharge transistor, causing the discharge transistor to turn off.

5. The CMOS integrated circuit instantaneous photocurrent detection and discharge circuit according to claim 2, characterized in that, The integrated circuit to be hardened is a PMOS current mirror. The gate of the PMOS discharge transistor is connected to the output terminal of the PMOS source follower, the source of the PMOS discharge transistor is connected to the output terminal of the PMOS current mirror, and the drain is directly connected to ground.

6. The CMOS integrated circuit instantaneous photocurrent detection and discharge circuit according to claim 5, characterized in that, The gate of the PMOS transistor P1 is connected to the body of the PMOS current mirror to detect changes in the PMOS current mirror body voltage Vb_mirror; the source of the PMOS transistor P1 and one end of the resistor R1 are connected to the gate of the discharge unit, and the other end of the resistor R1 is connected to the power supply.

7. The CMOS integrated circuit instantaneous photocurrent detection and discharge circuit according to claim 6, characterized in that, When the photocurrent generated by transient radiation interferes with the PMOS current mirror, its body voltage Vb_mirror collapses, causing A1 in the detection discharge circuit to drop accordingly. This leads to the conduction of the discharge transistor, accelerating the discharge of the photocurrent generated by transient radiation in the PMOS current mirror, allowing the current mirror bias voltage VP1 to quickly recover and stabilize, thereby stabilizing the current mirror output current Ibias.

8. The CMOS integrated circuit instantaneous photocurrent detection and discharge circuit according to any one of claims 2-7, characterized in that, A multi-channel PMOS switch is used to connect multiple PMOS devices to the gate of the same PMOS transistor P1 in a time-division manner, and a detection unit is matched with a multi-channel amplifier / current mirror.

9. The CMOS integrated circuit instantaneous photocurrent detection and discharge circuit according to any one of claims 2-7, characterized in that, The discharge unit includes multiple groups of PMOS transistors with varying aspect ratios connected in parallel, with different voltage divider resistors connected in series at the gate of each group to achieve graded conduction; small photocurrents only turn on small-sized discharge transistors, while large photocurrents turn on all transistors.

10. The CMOS integrated circuit instantaneous photocurrent detection and discharge circuit according to any one of claims 2-7, characterized in that, It also includes an irradiation status indication output branch, which adds a buffer NMOS transistor to the source of PMOS transistor P1 and brings out a digital indication pin.

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