Image sensing device

Abstract

An image sensing device including a pixel isolation structure is disclosed. The image sensing device includes different first and second pixels configured to detect light of the same wavelength range. In the image sensing device, a plurality of first protrusions extending into a first active region within the first pixel and a plurality of second protrusions extending into a second active region within the second pixel have different lengths.

Description

Technical Field

[0001] The technologies and implementations disclosed in this patent document generally relate to an image sensing device, and more specifically, to an image sensing device including a pixel isolation structure. Background Technology

[0002] An image sensing device is a device used to capture optical images by converting light into electrical signals using photosensitive semiconductor materials that react with light. With the development of the automotive, medical, computer, and communications industries, the demand for high-performance image sensing devices is increasing in various fields such as smartphones, digital cameras, game consoles, the Internet of Things, robotics, security cameras, and medical miniature cameras.

[0003] Image sensing devices can be broadly categorized into CCD (Charge-Coupled Device) image sensing devices and CMOS (Complementary Metal-Oxide-Semiconductor) image sensing devices. CCD image sensing devices offer better image quality, but they tend to consume more power and are larger compared to CMOS image sensing devices. CMOS image sensing devices are smaller and consume less power than CCD image sensing devices. Furthermore, CMOS sensors are manufactured using CMOS fabrication technology, allowing photosensitive elements and other signal processing circuitry to be integrated onto a single chip, enabling the production of miniaturized image sensing devices at a lower cost. For these reasons, CMOS image sensing devices are being developed for many applications, including mobile devices. Summary of the Invention

[0004] Various embodiments of this disclosure relate to an image sensing device that can solve the problem of having to design complex circuitry to generate images with high dynamic range (HDR).

[0005] Various embodiments of this disclosure relate to an image sensing device that includes a pixel structure that can achieve both high-sensitivity and low-sensitivity pixels for the same type of pixels (i.e., uniform pixels) without the need for complex circuit design.

[0006] According to embodiments of the present disclosure, an image sensing device may include: a first pixel, the first pixel including a first active region thereon on which light of a first wavelength range is incident and a plurality of first protrusions, each of the plurality of first protrusions extending into the first active region by a first length; and a second pixel, the second pixel including a second active region thereon on which light of the first wavelength range is incident and a plurality of second protrusions, each of the second protrusions extending into the second active region by a second length shorter than the first length.

[0007] In some implementations, the plurality of first protrusions may extend from one side of a first pixel isolation structure surrounding the first active region to the center of the first active region. The plurality of second protrusions may extend from one side of a second pixel isolation structure surrounding the second active region to the center of the second active region.

[0008] In some implementations, the first pixel may include a first photoelectric conversion element and a second photoelectric conversion element for detecting light in the first wavelength range, wherein each of the first protrusions is disposed between the first photoelectric conversion element and the second photoelectric conversion element. The second pixel may include a third photoelectric conversion element and a fourth photoelectric conversion element for detecting light in the first wavelength range, wherein each of the second protrusions is disposed between the third photoelectric conversion element and the fourth photoelectric conversion element.

[0009] In some implementations, the first pixel may include a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element for detecting light in the first wavelength range; and the second pixel may include a fifth photoelectric conversion element, a sixth photoelectric conversion element, a seventh photoelectric conversion element, and an eighth photoelectric conversion element for detecting light in the first wavelength range.

[0010] In some implementations, the first protrusion disposed between the first photoelectric conversion element and the second photoelectric conversion element may extend in a first direction; the first protrusion disposed between the third photoelectric conversion element and the fourth photoelectric conversion element may extend in a direction opposite to the first direction; the first protrusion disposed between the first photoelectric conversion element and the third photoelectric conversion element may extend in a second direction; and the first protrusion disposed between the second photoelectric conversion element and the third photoelectric conversion element may extend in a direction opposite to the second direction.

[0011] In some implementations, the second protrusion disposed between the fifth photoelectric conversion element and the sixth photoelectric conversion element may extend in the first direction; the second protrusion disposed between the seventh photoelectric conversion element and the eighth photoelectric conversion element may extend in a direction opposite to the first direction; the second protrusion disposed between the fifth photoelectric conversion element and the seventh photoelectric conversion element may extend in the second direction; and the second protrusion disposed between the sixth photoelectric conversion element and the seventh photoelectric conversion element may extend in a direction opposite to the second direction.

[0012] In some implementations, the first pixel may have a lower sensitivity than the second pixel.

[0013] In some implementations, the image sensing device may further include: a third pixel, the third pixel including a third active region thereon on which light of the second wavelength range is incident and a third protrusion, the third protrusion extending to the third active region for a third length; and a fourth pixel, the fourth pixel including a fourth active region thereon on which light of the second wavelength range is incident and a fourth protrusion, the fourth protrusion extending to the fourth active region for the third length.

[0014] In some implementations, the image sensing device may further include: a third pixel, the third pixel including a third active region thereon on which light of the first wavelength range is incident and a third protrusion, the third protrusion extending into the third active region to the second length; and a fourth pixel, the fourth pixel including a fourth active region thereon on which light of the first wavelength range is incident and a fourth protrusion, the fourth protrusion extending into the fourth active region to the second length.

[0015] In some implementations, the image sensing device may further include: a fifth pixel, the fifth pixel including a fifth active region thereon on which light of the second wavelength range is incident and a fifth protrusion, the fifth protrusion extending into the fifth active region to the first length; a sixth pixel, the sixth pixel including a sixth active region thereon on which light of the second wavelength range is incident and a sixth protrusion, the sixth protrusion extending into the sixth active region to the second length; a seventh pixel, the seventh pixel including a seventh active region thereon on which light of the second wavelength range is incident and a seventh protrusion, the seventh protrusion extending into the seventh active region to the second length; and an eighth pixel, the eighth pixel including an eighth active region thereon on which light of the second wavelength range is incident and an eighth protrusion, the eighth protrusion extending into the eighth active region to the second length.

[0016] According to another embodiment of this disclosure, the image sensing device may include: a pixel array, the pixel array including a pixel isolation structure disposed along the boundary of the plurality of pixels. The pixel array may include: a first pixel group, the first pixel group including a first pixel and a second pixel for detecting light in a first wavelength range. The first pixel may include a plurality of first protrusions, each of the first protrusions extending from the pixel isolation structure to the center of the first pixel by a first length. The second pixel may include a plurality of second protrusions, each of the second protrusions extending from the pixel isolation structure to the center of the second pixel by a second length shorter than the first length.

[0017] In some implementations, the plurality of first protrusions may include: a first protrusion extending from the pixel isolation structure in a first direction; and another first protrusion extending from the pixel isolation structure in a direction opposite to the first direction.

[0018] In some implementations, the plurality of first protrusions may further include: a first protrusion extending from the pixel isolation structure in a second direction; and another first protrusion extending from the pixel isolation structure in a direction opposite to the second direction.

[0019] In some implementations, the plurality of second protrusions may include: a second protrusion extending from the pixel isolation structure in a first direction; and another second protrusion extending from the pixel isolation structure in a direction opposite to the first direction.

[0020] In some implementations, the first pixel group may further include a third pixel and a fourth pixel, the third pixel and the fourth pixel being configured to detect light in the first wavelength range, wherein the first pixel to the fourth pixel are arranged in a (2×2) matrix structure.

[0021] In some implementations, the third pixel may include a plurality of third protrusions extending from the pixel isolation structure to the center of the third pixel to the second length; and the fourth pixel includes a plurality of fourth protrusions extending from the pixel isolation structure to the center of the fourth pixel to the second length.

[0022] In some implementations, the third pixel may include a plurality of third protrusions, each of which extends from the pixel isolation structure to the center of the third pixel to the first length; and the fourth pixel includes a plurality of fourth protrusions, each of which extends from the pixel isolation structure to the center of the fourth pixel to the second length.

[0023] In some implementations, the pixel array may further include a fifth pixel and a sixth pixel configured to detect light in a second wavelength range. The fifth pixel includes a plurality of fifth protrusions, each of which extends from the pixel isolation structure to the center of the fifth pixel at a first length. The sixth pixel includes a plurality of sixth protrusions, each of which extends from the pixel isolation structure to the center of the sixth pixel at a second length.

[0024] In some implementations, the plurality of fifth protrusions may include: a fifth protrusion configured to extend from the pixel isolation structure in a first direction; and a fifth protrusion configured to extend from the pixel isolation structure in a direction opposite to the first direction.

[0025] In some implementations, the plurality of fifth protrusions may include: a fifth protrusion configured to extend from the pixel isolation structure in a second direction; and a fifth protrusion configured to extend from the pixel isolation structure in a direction opposite to the second direction.

[0026] In some implementations, the plurality of sixth protrusions may include: a sixth protrusion configured to extend from the pixel isolation structure in the first direction; and a sixth protrusion configured to extend from the pixel isolation structure in a direction opposite to the first direction.

[0027] In some implementations, each of the first protrusion and the second protrusion may be perpendicular to the pixel isolation structure.

[0028] It should be understood that the foregoing general description and the following detailed description of this disclosure are illustrative and explanatory, and are intended to provide further explanation of the claimed disclosure. Attached Figure Description

[0029] The foregoing and other features, as well as various examples and implementations of the beneficial aspects of this disclosure, are described with reference to the following detailed description and accompanying drawings.

[0030] Figure 1 This is a block diagram illustrating an example of an image sensing device based on some embodiments of the present disclosure.

[0031] Figure 2 This is a plan view illustrating an example of a pixel array based on some embodiments of the present disclosure.

[0032] Figure 3 This illustrates some embodiments based on this disclosure. Figure 2 A plan view of the pixel region shown in the first embodiment.

[0033] Figure 4 This illustrates some embodiments based on this disclosure. Figure 3 The image shows a cross-sectional view of an example pixel region intercepted by line A-A'.

[0034] Figure 5 This illustrates some embodiments based on the present disclosure. Figure 3 The graph shows the sensitivity variation and crosstalk variation of the protrusion length shown.

[0035] Figure 6This illustrates some embodiments based on this disclosure. Figure 2 A plan view of the second embodiment of the pixel region shown. Detailed Implementation

[0036] This patent document provides implementations and examples of an image sensing device including a pixel isolation structure, which can be used in configurations to substantially solve one or more technical or engineering problems and mitigate limitations or drawbacks encountered in some other image sensing devices. Some implementations of this disclosure relate to an image sensing device that solves the problem of having to design complex circuitry to generate images with high dynamic range (HDR). Some implementations of this disclosure relate to an image sensing device including a pixel structure that can achieve high-sensitivity and low-sensitivity pixels for the same type of pixels (i.e., uniform pixels) without designing complex circuitry. Some implementations of this disclosure can provide an image sensing device with high dynamic range (HDR) by varying the sensitivity of pixels detecting light within the same wavelength range without designing separate complex circuitry.

[0037] In the following description, various implementations and methods of the disclosed technology are illustrated with reference to the accompanying drawings. It should be understood that this disclosure is not limited to specific embodiments, but includes various modifications, equivalents, and / or substitutions of the embodiments. Embodiments of this disclosure can provide various effects that can be directly or indirectly identified by this disclosure.

[0038] Figure 1 This is a schematic diagram illustrating an example of an image sensing device 10 based on some embodiments of the present disclosure.

[0039] Reference Figure 1 The image sensing device 10 according to an exemplary embodiment of the present disclosure may include a timing control circuit 110, a drive control circuit 120, a pixel array 130, and a readout circuit 140. Figure 1 The components of the image sensing device 10 shown are discussed by way of example only, and this patent document contains many other variations, substitutions, modifications, alterations, and alterations. In this patent document, the term "pixel" can be used to refer to an image sensing pixel configured to detect incident light to generate an electrical signal carrying an image in the incident light. For example, the image sensing device 10 can be a complementary metal-oxide-semiconductor (CMOS) image sensor configured to convert incident light into an electrical signal.

[0040] The timing control circuit 110 can generate timing signals to control the operation of the drive control circuit 120 and the readout circuit 140. In some implementations, the timing control circuit 110 can generate timing signals in response to requests from an external processor (e.g., an image signal processor, ISP). In some implementations, the timing control circuit 110 may include logic control circuitry, phase-locked loop (PLL) circuitry, communication interface circuitry, etc.

[0041] The drive control circuit 120 can drive the pixels PX of the pixel array 130 in response to a timing signal output from the timing control circuit 110. The drive control circuit 120 can select and control the pixels PX included in at least one row line from multiple row lines of the pixel array 130. The drive control circuit 120 can generate a row selection signal to select at least one row from multiple rows. The drive control circuit 120 can sequentially enable a pixel reset signal and a transmission signal for the pixel PX corresponding to at least one selected row. Therefore, the analog reference signal and image signal generated from each pixel PX in the selected row can be sequentially transmitted to the readout circuit 140. The reference signal can be an electrical signal provided to the readout circuit 140 when the floating diffusion region FD of each pixel is reset to the power supply voltage (VDD). The image signal can be an electrical signal provided to the readout circuit 140 when the photocharge generated by each pixel accumulates in the floating diffusion region FD. As needed, the reference signal indicating the unique pixel noise of each pixel and the image signal indicating the intensity of the incident light can be collectively referred to as the pixel signal.

[0042] Pixel array 130 may include a plurality of pixels PX arranged in rows and columns. In one example, the plurality of pixels PX may be arranged in a two-dimensional (2D) pixel array including rows and columns. In another example, the plurality of pixels PX may be arranged in a three-dimensional (3D) pixel array. The plurality of pixels PX may convert optical signals into electrical signals on a pixel-by-pixel basis or on a pixel group basis including a plurality of pixels, and may output pixel signals. Here, pixels in a pixel group of pixel array 130 may share at least some internal circuitry. Pixel array 130 may receive drive signals including row selection signals, pixel reset signals, transmission signals, etc., from drive control circuit 120. Upon receiving a drive signal, the corresponding imaging pixel in pixel array 130 may be activated to perform an operation corresponding to the row selection signal, pixel reset signal, and transmission signal.

[0043] The readout circuit 140 can detect the pixel signal output from the pixel array 130 under the control of the timing control circuit 110, and can output the detected pixel signal as image data. This image data can be digital data generated by performing analog-to-digital conversion on the analog pixel signal. For this purpose, the readout circuit 140 may include a correlated double sampler (CDS) for performing correlated double sampling on the pixel signal output from the pixel array 130. Furthermore, the readout circuit 140 may include an analog-to-digital converter (ADC) for converting the signal output from the correlated double sampler (CDS) into a digital signal to generate pixel data. Additionally, the readout circuit 140 may include a buffer circuit for temporarily storing the pixel data output from the ADC, and outputting the stored pixel data to the outside under the control of the timing control circuit 110. The correlated double sampler (CDS) can remove unwanted offset values ​​of the pixel by comparing the pixel output voltage obtained before and after the accumulation of photocharge generated by the pixel in response to detected incident light in the floating diffusion region FD, thereby allowing measurement only of the pixel output voltage based on the incident light. The readout circuit 140 can sequentially sample and hold the voltage levels of the reference signal and image signal provided from the pixel array 130 to each of the multiple column lines. That is, the readout circuit 140 can sample and hold the voltage levels of the reference signal and image signal corresponding to each of the multiple columns of the pixel array 130. The readout circuit 140 can convert the correlated double sampler (CDS) signal, which is an analog signal for each column, into a digital signal and can output a digital signal for each column. The readout circuit 140 can temporarily hold the image data for each column and can output the image data to, for example, an image processing device (not shown).

[0044] Figure 2 This illustrates some embodiments based on this disclosure. Figure 1 A plan view of an example of the pixel array 130 of the image sensing device 10 shown.

[0045] Reference Figure 1 and Figure 2 The pixel array 130 may include, for example, a structure in which multiple pixels PX are arranged in a two-dimensional (2D) matrix. The pixel array 130 may include M pixels PX arranged along a horizontal direction (row direction) (where "M" is an integer greater than or equal to 2). The pixel array 130 may include N pixels PX arranged along a vertical direction (where "N" is an integer greater than or equal to 2). In this example, the pixel array 130 may include multiple pixels, including first pixels PX1 to fourth pixels PX4. The first pixels PX1 to fourth pixels PX4 may be arranged in a (2×2) matrix structure.

[0046] Pixel array 130 may include pixel isolation structures (not shown) arranged along the boundaries of a plurality of pixels. (See later...) Figure 3 The following text will describe this pixel isolation structure.

[0047] Pixel array 130 may include pixel region Q, which includes first pixel PX1 to sixteenth pixel PX16. Within pixel region Q, the 16 pixels PX1 to PX16 are arranged in a 4x4 matrix structure. The following will refer to… Figure 3 To describe a more detailed implementation of the pixel region Q.

[0048] Figure 3 This illustrates some embodiments based on this disclosure. Figure 2 A plan view of the first embodiment showing four adjacent pixels PX1, PX2, PX5, and PX6 in a row within the pixel region Q shown.

[0049] Reference Figure 2 and Figure 3 According to the first embodiment, the pixel region Q1 may include a first pixel group PG1 to a fourth pixel group PG4, wherein each pixel group has four adjacent pixels: for example, the first pixel group PG1 includes a 2×2 matrix of adjacent pixels PX1 to PX4, and the second pixel group PG2 includes a 2×2 matrix of adjacent pixels PX5 to PX8, and so on. The first pixel group PG1 to the fourth pixel group PG4 may be arranged in a (2×2) matrix structure. The first pixel group PG1 to the fourth pixel group PG4 may be designed and configured to detect light in different wavelength ranges.

[0050] The first pixel group PG1 may include, for example: Figure 2 and Figure 3 The first pixel PX1 to the fourth pixel PX4 are shown in the diagram. For example, the first pixel PX1 to the fourth pixel PX4 can be arranged in a (2×2) matrix structure comprising two rows and two columns. (See reference...) Figure 3 The illustrated examples of PX1 and PX2 show that each of the first pixel PX1 through the fourth pixel PX4 may include a microlens (not shown) that focuses incident light onto a photoelectric conversion element. Each of the first pixel PX1 through the fourth pixel PX4 may include a color filter (not shown) that selectively transmits light within a first wavelength range (e.g., green to orange light with wavelengths from 500 nm to 600 nm). Due to the presence of the color filter (not shown), each of the first pixel PX1 through the fourth pixel PX4 can detect light within the first wavelength range without needing to detect light outside the first wavelength range. For example, each of the first pixel PX1 through the fourth pixel PX4 may include a photoelectric conversion element that detects light within the first wavelength range and generates a photocharge indicating the detected green light.

[0051] The second pixel group PG2 may include, for example: Figure 2 and Figure 3 The fifth pixel PX5 to the eighth pixel PX8 are shown. For example, the fifth pixel PX5 to the eighth pixel PX8 can be arranged in a (2×2) matrix structure comprising two rows and two columns. See reference. Figure 3 Examples of PX5 and PX6 in the diagram, each of the fifth pixel PX5 through the eighth pixel PX8 may include a microlens (not shown) that focuses incident light onto a photoelectric conversion element. Each of the fifth pixel PX5 through the eighth pixel PX8 may include a color filter (not shown) that selectively transmits light in a second wavelength range (e.g., blue to green light with wavelengths from 400 nm to 500 nm). Each of the fifth pixel PX5 through the eighth pixel PX8 may detect light in the second wavelength range. For example, each of the fifth pixel PX5 through the eighth pixel PX8 may include a photoelectric conversion element that detects light in the second wavelength range and generates a photocharge indicating the detected blue light.

[0052] The third pixel group PG3 may include, for example: Figure 2 and Figure 4 The ninth pixel PX9 to the twelfth pixel PX12 are shown. For example, the ninth pixel PX9 to the twelfth pixel PX12 can be arranged in a (2×2) matrix structure comprising two rows and two columns. Each of the ninth pixel PX9 to the twelfth pixel PX12 may include a microlens (not shown) that focuses incident light onto a photoelectric conversion element. Each of the ninth pixel PX9 to the twelfth pixel PX12 may include a color filter (not shown) that selectively transmits light in a third wavelength range (e.g., red light with wavelengths from 600 nm to 700 nm). Each of the ninth pixel PX9 to the twelfth pixel PX12 can detect light in the third wavelength range. For example, each of the ninth pixel PX9 to the twelfth pixel PX12 may include a photoelectric conversion element that detects light in the third wavelength range and generates a photocharge indicating the detected red light.

[0053] The fourth pixel group PG4 may include thirteenth pixels PX13 through sixteenth pixels PX16. For example, thirteenth pixels PX13 through sixteenth pixels PX16 may be arranged in a (2×2) matrix structure comprising two rows and two columns. Each of the thirteenth pixels PX13 through sixteenth pixels PX16 may include a microlens (not shown) that focuses incident light onto a photoelectric conversion element. Each of the thirteenth pixels PX13 through sixteenth pixels PX16 may include a color filter (not shown) that selectively transmits light within a first wavelength range or a fourth wavelength range (e.g., deep red to dark red light with wavelengths of 700 nm or longer). An implementation where each of the thirteenth pixels PX13 through sixteenth pixels PX16 can detect light within the first wavelength range will be described below. For example, each of the thirteenth pixels PX13 through sixteenth pixels PX16 may include a photoelectric conversion element that detects light within the first wavelength range and generates photocharges indicating the detected deep red and dark red light.

[0054] Reference Figure 3 In an example of a pixel structure, the first pixel PX1 may include a first active region ACT1 and a first pixel isolation structure ISO1 disposed on the side of the first active region ACT1. In this example, the first pixel isolation structure ISO1 may surround the first active region ACT1.

[0055] exist Figure 3 In the example, the first active region ACT1 may include two photoelectric conversion elements PD. The two photoelectric conversion elements PD may be spaced apart from each other. A first protrusion P1 may be disposed between the two photoelectric conversion elements PD in the first active region ACT1. Each of the two photoelectric conversion elements PD may generate photocharge in response to incident light received in the first active region ACT1. The first active region ACT1 may be or include a semiconductor region containing impurities of a first conductivity type (e.g., P-type). Each of the two photoelectric conversion elements PD may be or include a semiconductor region containing impurities of a second conductivity type (e.g., N-type).

[0056] Reference Figure 3 The first pixel isolation structure ISO1 can be disposed outside the first active region ACT1 and surrounding the first active region ACT1. The first pixel isolation structure ISO1 may include a first protrusion P1 disposed between two photoelectric conversion elements PD. (Refer to...) Figure 3 In the example shown, two first protrusions P1 are disposed in the first pixel PX1. Each of the first protrusions P1 can extend from the first pixel isolation structure ISO1 to the first active region ACT1 up to a first length d1. The first protrusions P1 can extend from one side of the first pixel isolation structure ISO1 (e.g., from...) Figure 3(as shown in the example at the top) extends to the center of the first active region ACT1. For example, the first protrusion P1 can extend from one side of the first pixel isolation structure ISO1 along the first direction X. Another first protrusion P1 can extend from the other side of the first pixel isolation structure ISO1 (e.g., from...). Figure 3 The example shown extends from the bottom of the first active region ACT1 to the center. For example, another first protrusion P1 can extend from the other side of the first pixel isolation structure ISO1 in a direction opposite to the first direction X. Figure 3 In the example shown, the first protrusion P1 extends from two opposite sides of the first pixel isolation structure ISO1. These two sides are facing each other. The first protrusions P1 extending from both sides of the first pixel isolation structure ISO1 to the center of the first active region ACT1 can be spaced apart from each other.

[0057] The first pixel isolation structure ISO1 may include an insulating material (e.g., silicon oxide, silicon nitride, etc.). The first pixel isolation structure ISO1 can reduce crosstalk between the first pixel PX1 and another adjacent pixel. The first protrusion P1 can reduce crosstalk between two photoelectric conversion elements PD arranged in the first pixel PX1. The degree of crosstalk reduction can vary depending on the length of the first protrusion P1, which will be discussed later. Figure 5 Describe it.

[0058] In the following description of pixels PX2 through PX16, descriptions that overlap with those described for the first pixel PX1 will be omitted as much as possible. The following text will focus on features that differ from those of the first pixel PX1.

[0059] Reference Figure 3 In the example shown, the second pixel PX2 may include a second active region ACT2 and a second pixel isolation structure ISO2 surrounding the second active region ACT2. The second active region ACT2 may include two photoelectric conversion elements PD. The second pixel isolation structure ISO2 may include a second protrusion P2 disposed between the two photoelectric conversion elements PD. (See reference...) Figure 3 In the example shown, two second protrusions P2 are disposed in the second pixel PX2. Each of the second protrusions P2 can extend from the second pixel isolation structure ISO2 into the second active region ACT2 to a second length d2. This second length d2 can be shorter than the first length d1. Similar to the first protrusion P1 in the first pixel PX1, the second protrusions P2 can extend from both sides of the pixel isolation structure toward the center of the second active region ACT2 or the center of the second pixel PX2. One second protrusion P2 can extend from one side of the pixel isolation structure along a first direction X, and the other second protrusion P2 can extend from the other side of the pixel isolation structure in a direction opposite to the first direction X.

[0060] The second pixel PX2 may have a different protrusion length than the first pixel PX1, but apart from this difference in protrusion length, it may be substantially the same as the first pixel PX1. The second pixel PX2 may be configured to be adjacent to the first pixel PX1 in the second direction Y.

[0061] In the following description of the third pixel PX3 to the sixteenth pixel PX16, descriptions that overlap with those described in the first pixel PX1 or the second pixel PX2 will be omitted as much as possible.

[0062] Reference Figure 2 and Figure 3 The third pixel PX3 can be positioned adjacent to the first pixel PX1 along the first direction X. Except for its placement, the remaining internal structure of the third pixel PX3 can be substantially the same as that of the second pixel PX2. For example, the third pixel PX3 may include a third active region ACT3 and a third pixel isolation structure ISO3. The third active region ACT3 may include two photoelectric conversion elements PD. The third pixel PX3 may include a third protrusion P3 extending between the two photoelectric conversion elements PD into the interior of the third active region ACT3 along the first direction X and in the opposite direction of the first direction X. Each of the third protrusions P3 may extend to a second length d2.

[0063] Reference Figure 2 and Figure 3 The fourth pixel PX4 can be positioned from the second pixel PX2 along the first direction X. The fourth pixel PX4 can be positioned from the third pixel PX3 along the second direction Y. Except for the arrangement position of the fourth pixel PX4, the remaining internal structure of the fourth pixel PX4 can be substantially the same as the internal structure of the second pixel PX2. For example, the fourth pixel PX4 may include a fourth active region ACT4 and a fourth pixel isolation structure ISO4. The fourth active region ACT4 may include two photoelectric conversion elements PD. The fourth pixel PX4 may include a fourth protrusion P4 that extends between the two photoelectric conversion elements PD into the interior of the fourth active region ACT4 along the first direction X and in the opposite direction of the first direction X. The fourth protrusion P4 may also extend to a second length d2.

[0064] For example, such as Figure 2 and Figure 3As shown, a fifth pixel PX5 can be disposed from the second pixel PX2 along the second direction Y. Except for the arrangement position of the fifth pixel PX5 and the wavelength range of light selectively penetrating the color filter, the remaining internal structure of the fifth pixel PX5 can be substantially the same as the internal structure of the first pixel PX1. For example, the fifth pixel PX5 may include a fifth active region ACT5 and a fifth pixel isolation structure ISO5. The fifth active region ACT5 may include two photoelectric conversion elements PD. The fifth pixel PX5 may include a fifth protrusion P5 extending between the two photoelectric conversion elements PD along the first direction X and in the opposite direction of the first direction X into the interior of the fifth active region ACT5. Each of the fifth protrusions P5 may also extend to a first length d1.

[0065] like Figure 2 and Figure 3 As shown, the sixth pixel PX6 can be positioned from the fifth pixel PX5 along the second direction Y. Except for the arrangement of the sixth pixel PX6 and the wavelength range of light that selectively penetrates its color filter in the sixth pixel PX6, the remaining internal structure of the sixth pixel PX6 can be substantially the same as the internal structure of the second pixel PX2. For example, the sixth pixel PX6 may include a sixth active region ACT6 and a sixth pixel isolation structure ISO6. The sixth active region ACT6 may include two photoelectric conversion elements PD. The sixth pixel PX6 may include a sixth protrusion P6 that extends between the two photoelectric conversion elements PD along the first direction X and in the opposite direction of the first direction X into the interior of the sixth active region ACT6. Each of the sixth protrusions P6 may also extend to a second length d2 in the same manner as the second protrusion P2.

[0066] like Figure 2 and Figure 3 As shown, the seventh pixel PX7 can be positioned from the fifth pixel PX5 along the first direction X. Except for the arrangement of the seventh pixel PX7 and the wavelength range of light that selectively penetrates the color filter in the seventh pixel PX7, the remaining internal structure of the seventh pixel PX7 can be substantially the same as the internal structure of the second pixel PX2. For example, the seventh pixel PX7 may include a seventh active region ACT7 and a seventh pixel isolation structure ISO7. The seventh active region ACT7 may include two photoelectric conversion elements PD. The seventh pixel PX7 may include a seventh protrusion P7 that extends between the two photoelectric conversion elements PD along the first direction X and in the opposite direction of the first direction X into the interior of the seventh active region ACT7. Each of the seventh protrusions P7 may also extend to a second length d2 in the same manner as the second protrusion P2.

[0067] like Figure 2 and Figure 3As shown, the eighth pixel PX8 can be positioned from the sixth pixel PX6 along the first direction X. The eighth pixel PX8 can be positioned from the seventh pixel PX7 along the second direction Y. Except for the arrangement of the eighth pixel PX8 and the wavelength range of light that selectively penetrates the color filter in the eighth pixel PX8, the remaining internal structure of the eighth pixel PX8 can be substantially the same as the internal structure of the second pixel PX2. For example, the eighth pixel PX8 may include an eighth active region ACT8 and an eighth pixel isolation structure ISO8. The eighth active region ACT8 may include two photoelectric conversion elements PD. The eighth pixel PX8 may include an eighth protrusion P8 that extends between the two photoelectric conversion elements PD along the first direction X and in the opposite direction of the first direction X into the interior of the eighth active region ACT8. Each of the eighth protrusions P8 may also extend to a second length d2 in the same manner as the second protrusion P2.

[0068] like Figure 2 and Figure 3 As shown, a ninth pixel PX9 can be positioned from a third pixel PX3 along a first direction X. Since the ninth pixel PX9 detects light in a third wavelength range in a different manner than the first pixel PX1, which is configured to detect light in a first wavelength range, the remaining internal structure of the ninth pixel PX9 can be substantially the same as that of the first pixel PX1, except for its arrangement and the wavelength range of light that selectively penetrates the color filter within it. For example, the ninth pixel PX9 may include a ninth active region ACT9 and a ninth pixel isolation structure ISO9. The ninth active region ACT9 may include two photoelectric conversion elements PD. The ninth pixel PX9 may include a ninth protrusion P9 extending between the two photoelectric conversion elements PD along the first direction X and in the opposite direction of the first direction X into the interior of the ninth active region ACT9. Each of the ninth protrusions P9 may also extend to a first length d1 in the same manner as the first protrusion P1.

[0069] like Figure 2 and Figure 3As shown, the tenth pixel PX10 can be positioned from the ninth pixel PX9 along the second direction Y. Except for the arrangement of the tenth pixel PX10 and the wavelength range of light that selectively penetrates the color filter in the tenth pixel PX10, the remaining internal structure of the tenth pixel PX10 can be substantially the same as the internal structure of the second pixel PX2. For example, the tenth pixel PX10 may include a tenth active region ACT10 and a tenth pixel isolation structure ISO10. The tenth active region ACT10 may include two photoelectric conversion elements PD. The tenth pixel PX10 may include a tenth protrusion P10 that extends between the two photoelectric conversion elements PD along the first direction X and in the opposite direction of the first direction X into the interior of the tenth active region ACT10. Each of the tenth protrusions P10 may also extend to a second length d2 in the same manner as the second protrusion P2.

[0070] like Figure 2 and Figure 3 As shown, the eleventh pixel PX11 can be positioned from the ninth pixel PX9 along the first direction X. Except for the arrangement of the eleventh pixel PX11 and the wavelength range of light that selectively penetrates the color filter in the eleventh pixel PX11, the remaining internal structure of the eleventh pixel PX11 can be substantially the same as the internal structure of the second pixel PX2. For example, the eleventh pixel PX11 may include an eleventh active region ACT11 and an eleventh pixel isolation structure ISO11. The eleventh active region ACT11 may include two photoelectric conversion elements PD. The eleventh pixel PX11 may include an eleventh protrusion P11 that extends between the two photoelectric conversion elements PD into the interior of the eleventh active region ACT11 along the first direction X and in the opposite direction of the first direction X. Each of the eleventh protrusions P11 may also extend to a second length d2 in the same manner as the second protrusion P2.

[0071] like Figure 2 and Figure 3As shown, the twelfth pixel PX12 can be positioned from the tenth pixel PX10 along the first direction X. The twelfth pixel PX12 can be positioned from the eleventh pixel PX11 along the second direction Y. Except for the arrangement position of the twelfth pixel PX12 and the wavelength range of light that selectively penetrates the color filter in the twelfth pixel PX12, the remaining internal structure of the twelfth pixel PX12 can be substantially the same as the internal structure of the second pixel PX2. For example, the twelfth pixel PX12 may include a twelfth active region ACT12 and a twelfth pixel isolation structure ISO12. The twelfth active region ACT12 may include two photoelectric conversion elements PD. The twelfth pixel PX12 may include a twelfth protrusion P12 that extends between the two photoelectric conversion elements PD into the interior of the twelfth active region ACT12 along the first direction X and in the opposite direction of the first direction X. Each of the twelfth protrusions P12 may also extend to a second length d2 in the same manner as the second protrusion P2.

[0072] like Figure 2 and Figure 3 As shown, the thirteenth pixel PX13 can be positioned from the tenth pixel PX10 along the second direction Y. Except for the arrangement of the thirteenth pixel PX13 and the wavelength range of light that selectively penetrates the color filter in the thirteenth pixel, the remaining internal structure of the thirteenth pixel PX13 can be substantially the same as the internal structure of the first pixel PX1. For example, the thirteenth pixel PX13 may include a thirteenth active region ACT13 and a thirteenth pixel isolation structure ISO13. The thirteenth active region ACT13 may include two photoelectric conversion elements PD. The thirteenth pixel PX13 may include a thirteenth protrusion P13 that extends between the two photoelectric conversion elements PD into the interior of the thirteenth active region ACT13 along the first direction X and in the opposite direction of the first direction X. Each of the thirteenth protrusions P13 may also extend to a first length d1.

[0073] like Figure 2 and Figure 3As shown, the fourteenth pixel PX14 can be positioned from the thirteenth pixel PX13 along the second direction Y. Except for the arrangement of the fourteenth pixel PX14 and the wavelength range of light that selectively penetrates the color filter in the fourteenth pixel, the remaining internal structure of the fourteenth pixel PX14 can be substantially the same as the internal structure of the second pixel PX2. For example, the fourteenth pixel PX14 may include a fourteenth active region ACT14 and a fourteenth pixel isolation structure ISO14. The fourteenth active region ACT14 may include two photoelectric conversion elements PD. The fourteenth pixel PX14 may include a fourteenth protrusion P14 that extends between the two photoelectric conversion elements PD along the first direction X and in the opposite direction of the first direction X into the interior of the fourteenth active region ACT14. Each of the fourteenth protrusions P14 may also extend to a second length d2 in the same manner as the second protrusion P2.

[0074] like Figure 2 and Figure 3 As shown, the fifteenth pixel PX15 can be positioned from the thirteenth pixel PX13 along the first direction X. Except for the arrangement of the fifteenth pixel PX15 and the wavelength range of light that selectively penetrates the color filter in the fifteenth pixel, the remaining internal structure of the fifteenth pixel PX15 can be substantially the same as the internal structure of the second pixel PX2. For example, the fifteenth pixel PX15 may include a fifteenth active region ACT15 and a fifteenth pixel isolation structure ISO15. The fifteenth active region ACT15 may include two photoelectric conversion elements PD. The fifteenth pixel PX15 may include a fifteenth protrusion P15 that extends between the two photoelectric conversion elements PD along the first direction X and in the opposite direction of the first direction X into the interior of the fifteenth active region ACT15. Each of the fifteenth protrusions P15 may also extend to a second length d2 in the same manner as the second protrusion P2.

[0075] like Figure 2 and Figure 3As shown, the sixteenth pixel PX16 can be positioned from the fourteenth pixel PX14 along the first direction X. The sixteenth pixel PX16 can be positioned from the fifteenth pixel PX15 along the second direction Y. Except for the arrangement of the sixteenth pixel PX16 and the wavelength range of light that selectively penetrates the color filter in the sixteenth pixel PX16, the remaining internal structure of the sixteenth pixel PX16 can be substantially the same as the internal structure of the second pixel PX2. For example, the sixteenth pixel PX16 may include a sixteenth active region ACT16 and a sixteenth pixel isolation structure ISO16. The sixteenth active region ACT16 may include two photoelectric conversion elements PD. The sixteenth pixel PX16 may include a sixteenth protrusion P16 that extends between the two photoelectric conversion elements PD along the first direction X and in the opposite direction of the first direction X into the interior of the sixteenth active region ACT16. Each of the sixteenth protrusions P16 may also extend to a second length d2 in the same manner as the second protrusion P2.

[0076] As will be referred to later Figure 5 As described above, since pixels PX1, PX5, PX9, and PX13, each comprising protrusions P1, P5, P9, and P13 (each protrusion extending to a first length d1), are configured to have active regions ACT1, ACT5, ACT9, and ACT13 (with relatively small areas), the sensitivity of each of pixels PX1, PX5, PX9, and PX13 can be relatively low. Therefore, in the following text, pixels PX1, PX5, PX9, and PX13 are referred to as low-sensitivity pixels. On the other hand, since pixels PX2 to PX4, PX6 to PX8, PX10 to PX12, and PX14 to PX16, which respectively include protrusions P2 to P4, P6 to P8, P10 to P12, and P14 to P16 (each protrusion extending to a second length d2), are configured to have active regions ACT2 to ACT4, ACT6 to ACT8, and ACT10 to ACT12 (with relatively large areas), the sensitivity of each of pixels PX2 to PX4, PX6 to PX8, PX10 to PX12, and PX14 to PX16 can be relatively high. Therefore, in the following text, pixels PX2 to PX4, PX6 to PX8, PX10 to PX12, and PX14 to PX16 are referred to as high-sensitivity pixels.

[0077] According to one implementation, each of the first pixel group PG1 to the fourth pixel group PG4 may include one low-sensitivity pixel and three high-sensitivity pixels. However, other implementations are also possible, allowing the low-sensitivity pixel and high-sensitivity pixel to have various composition ratios depending on the configuration of the pixel groups. According to another implementation, with Figure 3The illustrations differ from those in the diagrams. Each of the first pixel group PG1 to the fourth pixel group PG4 may include two low-sensitivity pixels and two high-sensitivity pixels.

[0078] In a saturated environment where high-sensitivity pixels, which are more sensitive to incident light and receive a relatively large amount of incident light, are saturated, an implementation with two low-sensitivity pixels may be more advantageous than an implementation with one low-sensitivity pixel. Conversely, in an environment where high-sensitivity pixels are not saturated, an implementation with three high-sensitivity pixels may be more advantageous than an implementation with two high-sensitivity pixels. The above description can also be applied similarly to... Figure 6 The implementation method.

[0079] Figure 4 This illustrates some embodiments based on this disclosure. Figure 3 Figure 40 shows an example cross-section of the pixel array intercepted by line A-A'.

[0080] Reference Figure 3 and Figure 4 The cross-sectional view 40 may include a first microlens ML1, a second microlens ML2, a fifth microlens ML5, a sixth microlens ML6, a first color filter CF1, a second color filter CF2, a fifth color filter CF5, a sixth color filter CF6, a grid structure GRD, an anti-reflective layer AR, and a semiconductor layer 400.

[0081] A first microlens ML1 may be disposed on a first color filter CF1. The first microlens ML1 can collect incident light received from the outside and can transmit the collected light to the first color filter CF1. For example, the first microlens ML1 may comprise a material such as a light-transmitting resin or a light-transmitting photoresist.

[0082] The second microlens ML2 can be disposed on the second color filter CF2. The second microlens ML2 can collect incident light received from the outside and can transmit the collected light to the second color filter CF2. The second microlens ML2 can include the same material as the first microlens ML1.

[0083] A fifth microlens ML5 can be disposed on a fifth color filter CF5. The fifth microlens ML5 can collect incident light received from the outside and transmit the collected light to the fifth color filter CF5. The fifth microlens ML5 can comprise the same material as the first microlens ML1.

[0084] A sixth microlens ML6 may be disposed on a sixth color filter CF6. The sixth microlens ML6 can collect incident light received from the outside and transmit the collected light to the sixth color filter CF6. The sixth microlens ML6 may comprise the same material as the first microlens ML1.

[0085] The first color filter CF1 can selectively transmit light within a first wavelength range from the incident light collected by the first microlens ML1. The first color filter CF1 can be disposed below the first microlens ML1. The first color filter CF1 can be disposed on the anti-reflective layer AR. The first color filter CF1 can be disposed between the grid structures GRD.

[0086] The second color filter CF2 can selectively transmit light within a first wavelength range from the incident light collected by the second microlens ML2. The second color filter CF2 can be positioned below the second microlens ML2. The second color filter CF2 can be positioned on the anti-reflective layer AR. The second color filter CF2 can be positioned between the grid structures GRD.

[0087] The fifth color filter CF5 can selectively transmit light in the second wavelength range from the incident light collected by the fifth microlens ML5. The fifth color filter CF5 can be positioned below the fifth microlens ML5. The fifth color filter CF5 can be positioned on the anti-reflective layer AR. The fifth color filter CF5 can be positioned between the grid structures GRD.

[0088] The sixth color filter CF6 can selectively transmit light in the second wavelength range from the incident light collected by the sixth microlens ML6. The sixth color filter CF6 can be positioned below the sixth microlens ML6. The sixth color filter CF6 can be positioned on the anti-reflective layer AR. The sixth color filter CF6 can be positioned between the grid structures GRD.

[0089] A grid structure GRD can be set on the anti-reflection layer AR. The grid structure GRD can be set at the boundary between two adjacent pixels (e.g., first pixel PX1 and second pixel PX2). The grid structure GRD can prevent incident light received obliquely from the outside from hitting adjacent pixels, thereby reducing crosstalk between adjacent pixels.

[0090] An anti-reflective layer AR can be disposed on the rear surface 401 of the semiconductor layer 400. The rear surface 401 can refer to the surface of the semiconductor layer 400 on which incident light is incident. The anti-reflective layer AR can comprise one or more layers with different refractive indices. The anti-reflective layer AR can comprise a material with high light transmittance, thereby allowing light of a specific wavelength that has passed through color filters (CF1, CF2, CF5, or CF6) to be easily transmitted to the photoelectric conversion element. For example, the anti-reflective layer AR can comprise silicon oxide, silicon nitride, hafnium nitride, etc.

[0091] The semiconductor layer 400 may include a first pixel isolation structure ISO1, a second pixel isolation structure ISO2, a fifth pixel isolation structure ISO5, a sixth pixel isolation structure ISO6, a first protrusion P1, a fifth protrusion P5, a first active region ACT1, a second active region ACT2, a fifth active region ACT5, a sixth active region ACT6, and a plurality of photoelectric conversion elements PD.

[0092] The first pixel isolation structure ISO1 may be a structure within the first pixel PX1 that contacts the boundary of the first pixel PX1. The first pixel isolation structure ISO1 may contact the side surface of the first active region ACT1. The first pixel isolation structure ISO1 may include a predetermined insulating layer (not shown) and a predetermined conductive layer (not shown). The insulating layer may include an insulating material (e.g., silicon oxide, silicon nitride, etc.). The insulating layer may electrically isolate the conductive layer from two adjacent active regions (e.g., the first active region ACT1 and the second active region ACT2). The insulating layer may have a structure surrounding the conductive layer. The conductive layer may be a region to which a voltage is applied to reduce dark noise in the first pixel PX1. The conductive layer may include a conductive material (e.g., polysilicon, doped polysilicon, etc.). The first pixel isolation structure ISO1 may prevent light that has penetrated the anti-reflective layer AR from incident on pixels adjacent to the first pixel PX1 (e.g., the second pixel PX2).

[0093] The first protrusion P1 can be formed near the center of the first active region ACT1. The two sides of the first protrusion P1 can be formed to contact the first active region ACT1. The first protrusion P1 can include the same material as the first pixel isolation structure ISO1. The first protrusion P1 can prevent light that has been obliquely incident on the first pixel PX1 and has passed through the first color filter CF1 from incident on another adjacent photoelectric conversion element PD within the same pixel. The first protrusion P1 can reduce crosstalk between two photoelectric conversion elements PD that are spaced apart within the same pixel. Furthermore, the amount of light incident on the photoelectric conversion element PD can be reduced by the first protrusion P1.

[0094] The second pixel isolation structure ISO2 can be a structure within the second pixel PX2 that contacts the boundary of the second pixel PX2. This second pixel isolation structure ISO2 can contact the side surface of the second active region ACT2. The second pixel isolation structure ISO2 can include a predetermined insulating layer (not shown) and a conductive layer (not shown). The insulating layer can include an insulating material. The conductive layer can include a conductive material. The insulating layer can electrically isolate the conductive layer from two adjacent active regions (e.g., the first active region ACT1 and the second active region ACT2). The insulating layer can have a structure surrounding the conductive layer. The conductive layer can be a region to which a voltage is applied to reduce dark noise in the second pixel PX2. The second pixel isolation structure ISO2 can prevent light that has penetrated the anti-reflective layer AR from incident on pixels adjacent to the second pixel PX2 (e.g., the first pixel PX1 or the fifth pixel PX5).

[0095] The fifth pixel isolation structure ISO5 can be a structure within the fifth pixel PX5 that contacts the boundary of the fifth pixel PX5. The fifth pixel isolation structure ISO5 can contact the side surface of the fifth active region ACT5. The fifth pixel isolation structure ISO5 can include a predetermined insulating layer and a conductive layer. The insulating layer can include an insulating material. The conductive layer can include a conductive material. The insulating layer can electrically isolate the conductive layer from two adjacent active regions (e.g., the fifth active region ACT5 and the sixth active region ACT6). The insulating layer can have a structure surrounding the conductive layer. The conductive layer can be a region to which a voltage is applied to reduce dark noise in the fifth pixel PX5. The fifth pixel isolation structure ISO5 can prevent light that has penetrated the anti-reflective layer AR from incident on pixels adjacent to the fifth pixel PX5 (e.g., the sixth pixel PX6).

[0096] The fifth protrusion P5 can be formed near the center of the fifth active region ACT5. The two sides of the fifth protrusion P5 can be formed to contact the fifth active region ACT5. The fifth protrusion P5 can include the same material as the fifth pixel isolation structure ISO5. The fifth protrusion P5 can prevent light that has been obliquely incident on the fifth pixel PX5 and has passed through the fifth color filter CF5 from incident on another photoelectric conversion element PD within the same pixel. The fifth protrusion P5 can reduce crosstalk between two photoelectric conversion elements PD that are spaced apart within the same pixel. Furthermore, the fifth protrusion P5 can reduce the amount of light incident on the photoelectric conversion element PD.

[0097] The sixth pixel isolation structure ISO6 can be a structure within the sixth pixel PX6 that contacts the boundary of the sixth pixel PX6. The sixth pixel isolation structure ISO6 can contact the side surface of the sixth active region ACT6. The sixth pixel isolation structure ISO6 can include a predetermined insulating layer (not shown) and a conductive layer (not shown). The insulating layer can include an insulating material (e.g., silicon oxide, silicon nitride, etc.). The conductive layer can include a conductive material (e.g., polysilicon, doped polysilicon, etc.). The insulating layer can electrically isolate the conductive layer from two adjacent active regions (e.g., the fifth active region ACT5 and the sixth active region ACT6). The insulating layer can have a structure surrounding the conductive layer. The conductive layer can be a region to which a voltage is applied to reduce dark noise in the sixth pixel PX6. The sixth pixel isolation structure ISO6 can prevent light that has penetrated the anti-reflective layer AR from incident on pixels adjacent to the sixth pixel PX6 (e.g., the fifth pixel PX5).

[0098] Each of the multiple photoelectric conversion elements (PDs) can generate photocharge in response to incident light. Each of the photoelectric conversion elements (PDs) may include impurities with a conductivity type opposite to that of the active region.

[0099] Figure 5 This illustrates some embodiments based on the present disclosure. Figure 3 The graph shows the sensitivity variation and crosstalk variation of the protrusion length shown.

[0100] Reference Figure 3 and Figure 5 , Figure 5 The horizontal axis of the curve graph represents the area included in the curve. Figure 3 The distance between relative protrusions in each pixel. This distance increases to the left of the horizontal axis of the graph and decreases to the right of the horizontal axis.

[0101] exist Figure 5 In the curve graph, the first vertical axis represents Figure 3 The sensitivity of each pixel. This sensitivity increases towards the top of the first vertical axis of the graph.

[0102] Figure 5 The second vertical axis of the curve represents Figure 3 The level of crosstalk within each pixel. This level of crosstalk is obtained by dividing the light signal that does not correspond to the corresponding pixel by the light signal that does correspond to the corresponding pixel.

[0103] For example, in the case of a pixel that generates an electrical signal in response to green light (hereinafter referred to as a green pixel), the level of crosstalk can satisfy the following equation 1.

[0104] [Equation 1]

[0105] (Crosstalk level of green pixels) = (Signal strength obtained from red and blue light incident on green pixels) / (Signal strength obtained from green light incident on red pixels).

[0106] Similarly, the crosstalk level of a pixel that generates an electrical signal in response to red light can be obtained by dividing the intensity of the signal obtained from the green and blue light in the incident light by the intensity of the signal obtained from the red light in the incident light. The crosstalk level of a pixel that generates an electrical signal in response to blue light can be obtained by dividing the intensity of the signal obtained from the red and green light in the incident light by the intensity of the signal obtained from the blue light in the incident light.

[0107] Crosstalk curves (LC) show how the degree of crosstalk between different photoelectric conversion elements included in a pixel is related to the length of the protrusions arranged between the photoelectric conversion elements.

[0108] The sensitivity curve LS shows how the sensitivity of a pixel varies with the length of the protrusions arranged between the photoelectric conversion elements.

[0109] In the following text, it will be described Figure 3 The first pixel PX1 and the second pixel PX2 from the first pixel PX1 to the sixteenth pixel PX16 are used as representative examples.

[0110] For example, a first protrusion P1 arranged between two different photoelectric conversion elements PD included in the first pixel PX1 can have a first length d1. The distance between the two first protrusions P1, both having the first length d1, can be a first distance W1.

[0111] The second protrusion P2, arranged between two different photoelectric conversion elements PD included in the second pixel PX2, can have a second length d2. The distance between the two second protrusions P2, both having a second length d2, can be a second distance W2.

[0112] The first pixel PX1 can have a first sensitivity S1. The degree of crosstalk within the first pixel PX1 can be represented by a first crosstalk C1. The second pixel PX2 can have a second sensitivity S2. The degree of crosstalk within the second pixel PX2 can be represented by a second crosstalk C2.

[0113] Since the first length d1 is longer than the second length d2, the first distance W1 can be shorter than the second distance W2.

[0114] As the distance between protrusions facing each other (e.g., a first distance W1 and / or a second distance W2) increases, optical loss decreases, which can improve pixel sensitivity and reduce crosstalk. Conversely, as the distance between protrusions facing each other decreases, optical loss increases, which may reduce pixel sensitivity and crosstalk. However, the isolation between different photoelectric conversion elements within the same pixel may increase, potentially reducing the movement of overflow photocharge.

[0115] As the distance between facing protrusions increases, the length of the protrusions decreases. This reduces the amount of incident light hitting the protrusions, thereby improving light efficiency and light sensitivity. Furthermore, taking a green pixel as an example, as the distance between facing protrusions increases, the intensity of green light incident on the green pixel can increase (i.e., the denominator of Equation 1 can increase). Additionally, due to the shorter protrusion length, the intensity of red and blue light scattered by protrusions of adjacent pixels and penetrating into the green pixel can decrease (i.e., the numerator of Equation 1 can decrease). Therefore, as the distance between facing protrusions increases, crosstalk can also be reduced.

[0116] Therefore, the first sensitivity S1 can be lower than the second sensitivity S2. Furthermore, the first crosstalk C1 can be larger than the second crosstalk C2.

[0117] In one embodiment, two photoelectric conversion elements are assigned to each pixel. Figure 1 The image sensing device 10 can output pixel signals according to a summation mode, which outputs pixel signals by summing the incident light detected by the two photoelectric conversion elements respectively. Figure 1 The image sensing device 10 can focus an image by using each of the two photoelectric conversion elements included in the same pixel according to the phase detection autofocus (PDAF) mode.

[0118] According to one embodiment of this disclosure, when the summation mode is used for a second pixel PX2 with relatively high sensitivity, a pixel signal with improved sensitivity can be output. Furthermore, when the first pixel PX1 has relatively low sensitivity, since the optical isolation between the two photoelectric conversion elements included in the first pixel PX1 is stronger than the optical isolation of the second pixel PX2, the image focus can be adjusted more accurately when the first pixel PX1 operates in PDAF mode.

[0119] Embodiments of this disclosure can provide an image sensing device with desired sensitivity and PDAF operating characteristics by adjusting the length of the protrusions of each pixel and the distance between protrusions facing each other (e.g., Figure 1 10).

[0120] The above references can also be used Figure 5The description also applies, or similarly applies, to implementations in which each pixel comprises four photoelectric conversion elements instead of two (e.g., Figure 6 Implementation method).

[0121] Figure 6 This illustrates some embodiments based on this disclosure. Figure 2 A plan view of the second embodiment of pixel region Q2 shown.

[0122] Reference Figure 2 , Figure 3 and Figure 6 According to the second embodiment, the pixel region Q2 may include a first pixel group PG1 to a fourth pixel group PG4. The first pixel group PG1 to the fourth pixel group PG4 may be arranged in a (2×2) matrix structure.

[0123] To prevent the attached drawings from becoming overly crowded, the reference numerals for the first pixel PX1 to the sixteenth pixel PX16 are not indicated, but according to the reference... Figure 2 The description allows for a clear distinction between the regions corresponding to pixels PX1 to PX16.

[0124] In the following description, descriptions that overlap with the description of pixel region Q1 in the first embodiment will be omitted as much as possible. Hereinafter, the characteristics that differ from those of pixel region Q1 in the first embodiment will be described in detail.

[0125] Pixels PX1 to PX4 in the first pixel group PG1 can be pixels that detect light within a first wavelength range. Pixels PX5 to PX8 in the second pixel group PG2 can be pixels that detect light within a second wavelength range. Pixels PX9 to PX12 in the third pixel group PG3 can be pixels that detect light within a third wavelength range. Pixels PX13 to PX16 in the fourth pixel group PG4 can be pixels that detect light within the first wavelength range.

[0126] Each of the first pixel PX1 to the sixteenth pixel PX16 may include four photoelectric conversion elements and four protrusions.

[0127] For example, in the case of the first pixel PX1, the first protrusion P1 can extend from each boundary of the first pixel isolation structure ISO1 along a first direction X and in a direction opposite to the first direction X. The first protrusion P1 can extend from each boundary of the first pixel isolation structure ISO1 along a second direction Y and in a direction opposite to the second direction Y. Each of the four first protrusions P1 can extend to the center of the first pixel PX1 up to a first length d1.

[0128] In the case of the second pixel PX2, the second protrusion P2 can extend from each boundary of the second pixel isolation structure ISO2 along each of the following directions: the first direction X, the opposite direction of the first direction X, the second direction Y, and the opposite direction of the second direction Y. Each of the second protrusions P2 can extend to the center of the second pixel PX2 up to a second length d2.

[0129] The third pixel PX3 to the sixteenth pixel PX16 can be configured such that the four protrusions extend to the center of each pixel along the first direction X, the opposite direction of the first direction X, the second direction Y, and the opposite direction of the second direction Y, respectively.

[0130] Each of the first protrusion P1, the fifth protrusion P5, the ninth protrusion P9, and the thirteenth protrusion P13 may extend to a first length d1. Each of the second protrusion P2 to the fourth protrusion P4, the sixth protrusion P6 to the eighth protrusion P8, the tenth protrusion P10 to the twelfth protrusion P12, and the fourteenth protrusion P14 to the sixteenth protrusion P16 may extend to a second length d2.

[0131] Each pixel is configured such that four photoelectric conversion elements are arranged in a (2×2) matrix structure, and protrusions are positioned between two adjacent photoelectric conversion elements along a first direction X or a second direction Y. This can be operated not only in summation mode and PDAF mode, but also in full 4-coupling (A4C) mode.

[0132] According to the second embodiment of this disclosure, even when the image sensing device operates in A4C mode, the degree of optical isolation between photoelectric conversion elements with different sensitivities in pixels that detect light within the same wavelength range is different from each other. Therefore, the second embodiment can provide an evolved image sensing device capable of rapidly processing high-resolution images and producing high-quality images (see [link]). Figure 1 10).

[0133] In the image sensing device according to embodiments of the present disclosure, although each of the second protrusions P2 to the fourth protrusion P4 may be shorter than the first protrusion P1, the second protrusions P2 to the fourth protrusion P4 may have the same or different lengths. Similarly, each of the sixth protrusions P6 to the eighth protrusion P8 may be shorter than the fifth protrusion P5, but each of the sixth protrusions P6 to the eighth protrusion P8 may have the same or different lengths. Although each of the tenth protrusions P10 to the twelfth protrusion P12 may be shorter than the ninth protrusion P9, the tenth protrusions P10 to the twelfth protrusion P12 may have the same or different lengths. Although each of the fourteenth protrusions P14 to the sixteenth protrusion P16 may be shorter than the thirteenth protrusion P13, the fourteenth protrusions P14 to the sixteenth protrusion P16 may have the same or different lengths.

[0134] As can be clearly seen from the above description, an image sensing device based on some embodiments of the present disclosure has a high dynamic range (HDR) by changing the sensitivity of pixels that detect light of the same wavelength range, without the need to design separate complex circuitry.

[0135] The embodiments disclosed herein can provide various effects that can be directly or indirectly identified through the aforementioned patent documents.

[0136] Those skilled in the art will understand that this disclosure can be implemented in other specific ways than those described herein. Furthermore, claims not expressly set forth in the appended claims may be proposed as combinations of embodiments, or may be proposed as new claims by subsequent amendments after the filing of this application.

[0137] Although several exemplary embodiments have been described, it should be understood that modifications and enhancements to the disclosed embodiments and other embodiments can be designed based on what is described and / or shown in this patent document.

[0138] Cross-reference to related applications

[0139] This patent document claims priority and benefit to Korean Patent Application No. 10-2025-0042052, filed on April 1, 2025, the disclosure of which is incorporated herein by reference in its entirety as part of the disclosure of this patent document.

Claims

1. An image sensing device, the image sensing device comprising: A first pixel, the first pixel including a first active region for receiving and detecting light in a first wavelength range and a plurality of first protrusions, each first protrusion extending into the first active region to a first length; as well as The second pixel includes a second active region for receiving and detecting light in the first wavelength range and a plurality of second protrusions, each of the second protrusions extending into the second active region to a second length shorter than the first length.

2. The image sensing device according to claim 1, wherein, The plurality of first protrusions extend from one side of the first pixel isolation structure surrounding the first active region to the center of the first active region; and The plurality of second protrusions extend from one side of the second pixel isolation structure surrounding the second active region to the center of the second active region.

3. The image sensing device according to claim 2, wherein, The first pixel includes a first photoelectric conversion element and a second photoelectric conversion element for detecting light within the first wavelength range, wherein each of the first protrusions is disposed between the first photoelectric conversion element and the second photoelectric conversion element; and The second pixel includes a third photoelectric conversion element and a fourth photoelectric conversion element for detecting light in the first wavelength range, wherein each of the second protrusions is disposed between the third photoelectric conversion element and the fourth photoelectric conversion element.

4. The image sensing device according to claim 2, wherein, The first pixel includes a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element for detecting light within the first wavelength range; and The second pixel includes a fifth photoelectric conversion element, a sixth photoelectric conversion element, a seventh photoelectric conversion element, and an eighth photoelectric conversion element for detecting light in the first wavelength range.

5. The image sensing device according to claim 4, wherein, The first protrusion disposed between the first photoelectric conversion element and the second photoelectric conversion element extends in a first direction; The first protrusion disposed between the third photoelectric conversion element and the fourth photoelectric conversion element extends in a direction opposite to the first direction; The first protrusion disposed between the first photoelectric conversion element and the third photoelectric conversion element extends in a second direction different from the first direction; and The first protrusion disposed between the second photoelectric conversion element and the third photoelectric conversion element extends in a direction opposite to the second direction.

6. The image sensing device according to claim 5, wherein, The second protrusion disposed between the fifth photoelectric conversion element and the sixth photoelectric conversion element extends in the first direction; The second protrusion disposed between the seventh photoelectric conversion element and the eighth photoelectric conversion element extends in a direction opposite to the first direction; The second protrusion disposed between the fifth photoelectric conversion element and the seventh photoelectric conversion element extends in the second direction; and The second protrusion, disposed between the sixth photoelectric conversion element and the seventh photoelectric conversion element, extends in a direction opposite to the second direction.

7. The image sensing device according to claim 1, wherein, The first pixel has a lower sensitivity than the second pixel.

8. The image sensing device according to claim 1, further comprising: The third pixel includes a third active region for receiving light in a second wavelength range and a third protrusion extending into the third active region to a third length. as well as The fourth pixel includes a fourth active region for receiving light in the second wavelength range and a fourth protrusion extending into the fourth active region to the third length.

9. The image sensing device according to claim 1, further comprising: The third pixel includes a third active region for receiving light in the first wavelength range and a third protrusion, the third protrusion extending into the third active region to the second length; as well as The fourth pixel includes a fourth active region for receiving light in the first wavelength range and a fourth protrusion extending into the fourth active region to the second length.

10. The image sensing device according to claim 9, further comprising: The fifth pixel includes a fifth active region for receiving light in a second wavelength range and a fifth protrusion extending into the fifth active region to the first length; The sixth pixel includes a sixth active region for receiving light in the second wavelength range and a sixth protrusion extending into the sixth active region to the second length; The seventh pixel includes a seventh active region for receiving light in the second wavelength range and a seventh protrusion extending into the seventh active region to the second length; as well as The eighth pixel includes an eighth active region for receiving light in the second wavelength range and an eighth protrusion extending into the eighth active region to the second length.

11. An image sensing device, the image sensing device comprising: A pixel array comprising a plurality of pixels and a pixel isolation structure, the plurality of pixels being configured to detect incident light to generate an electrical signal carrying an image in the incident light, the pixel isolation structure being disposed along the boundaries of the plurality of pixels; The plurality of pixels in the pixel array include: The first pixel group includes a first pixel and a second pixel for detecting light within a first wavelength range. in, The first pixel includes a plurality of first protrusions, each first protrusion extending from the pixel isolation structure to the center of the first pixel by a first length; and The second pixel includes a plurality of second protrusions, each second protrusion extending from the pixel isolation structure to the center of the second pixel by a second length shorter than the first length.

12. The image sensing device according to claim 11, wherein, The plurality of first protrusions include: A first protrusion extending from the pixel isolation structure in a first direction; and Another first protrusion extends from the pixel isolation structure in a direction opposite to the first direction.

13. The image sensing device according to claim 12, wherein, The plurality of first protrusions also include: A first protrusion extending from the pixel isolation structure in a second direction; and Another first protrusion extends from the pixel isolation structure in a direction opposite to the second direction.

14. The image sensing device according to claim 12, wherein, The plurality of second protrusions include: A second protrusion extending from the pixel isolation structure in a first direction; and Another second protrusion extends from the pixel isolation structure in a direction opposite to the first direction.

15. The image sensing device according to claim 13, wherein, The first pixel group also includes: The third and fourth pixels detect light within the first wavelength range. The first pixel to the fourth pixel are arranged in a 2×2 matrix structure.

16. The image sensing device according to claim 15, wherein, The third pixel includes a plurality of third protrusions, each third protrusion extending from the pixel isolation structure to the center of the third pixel to the second length; and The fourth pixel includes a plurality of fourth protrusions, each of which extends from the pixel isolation structure to the center of the fourth pixel to the second length.

17. The image sensing device according to claim 15, wherein, The third pixel includes a plurality of third protrusions, each third protrusion extending from the pixel isolation structure to the center of the third pixel up to the first length; and The fourth pixel includes a plurality of fourth protrusions, each of which extends from the pixel isolation structure to the center of the fourth pixel to the second length.

18. The image sensing device according to claim 15, wherein, The pixel array further includes: The fifth and sixth pixels detect light in the second wavelength range. in, The fifth pixel includes a plurality of fifth protrusions, each fifth protrusion extending from the pixel isolation structure to the center of the fifth pixel to the first length; and The sixth pixel includes a plurality of sixth protrusions, each of which extends from the pixel isolation structure to the center of the sixth pixel to the second length.

19. The image sensing device according to claim 18, wherein, The plurality of fifth protrusions include: A fifth protrusion extending from the pixel isolation structure in a first direction; and A fifth protrusion extending from the pixel isolation structure in a direction opposite to the first direction.

20. The image sensing device according to claim 19, wherein, The plurality of fifth protrusions include: A fifth protrusion extending from the pixel isolation structure in the second direction; and A fifth protrusion extending from the pixel isolation structure in a direction opposite to the second direction.

21. The image sensing device according to claim 19, wherein, The plurality of sixth protrusions include: A sixth protrusion extending from the pixel isolation structure in the first direction; and A sixth protrusion extending from the pixel isolation structure in a direction opposite to the first direction.

22. The image sensing device according to claim 11, wherein, Each of the first protrusion and the second protrusion is perpendicular to the pixel isolation structure.

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