Thermal processing chamber and thermal processing apparatus

Abstract

The embodiments of the present disclosure provide a thermal processing chamber and a thermal processing apparatus, wherein the thermal processing chamber comprises a top chamber, a bottom chamber, an upper lamp light source arranged in the top chamber, a lower lamp light source arranged in the bottom chamber, and a wafer support structure located between the upper lamp light source and the lower lamp light source and surrounded by an edge reflection plate group, the wafer support structure being a static support; the chamber is further provided with a wedge-shaped reflection plate assembly for balancing the light intensity of the transition region between the middle and the edge of the wafer; the wedge-shaped reflection plate assembly comprises an upper wedge-shaped reflection plate and a lower wedge-shaped reflection plate; the thermal processing chamber has a first sidewall and a second sidewall arranged oppositely, and a third sidewall and a fourth sidewall arranged oppositely; the upper wedge-shaped reflection plate is mounted on the first sidewall and the second sidewall, and the lower wedge-shaped reflection plate is mounted on the third sidewall and the fourth sidewall. The technical solution of the embodiments of the present disclosure can improve the overall light energy utilization rate.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor processing technology, and in particular to a heat treatment chamber and heat treatment equipment. Background Technology

[0002] Millisecond annealing, or rapid thermal processing (RTP), is used in the fabrication of semiconductor substrates, such as silicon wafers. In a typical millisecond annealing process, the semiconductor substrate is placed within a heat treatment chamber and heated by radiant energy provided by a light source, such as an arc lamp, flash lamp, or halogen lamp array. The heat treatment chamber is typically equipped with a support structure to hold the semiconductor substrate and reflective surfaces or plates arranged inside the chamber to guide the radiant light onto various areas of the semiconductor substrate. During the heating process of the semiconductor substrate, the thermal energy distribution and temperature gradient on the surface of the substrate (e.g., the temperature distribution extending from the center region to the edge region) are thermodynamic parameters involved in the semiconductor manufacturing process. Summary of the Invention

[0003] This disclosure provides a heat treatment chamber and heat treatment equipment to solve or alleviate one or more technical problems in the prior art.

[0004] As one aspect of the present disclosure, the present disclosure provides a millisecond annealing heat treatment chamber, which includes a top chamber, a bottom chamber, an upper light source disposed in the top chamber, a lower light source disposed in the bottom chamber, and a wafer support structure located between the upper light source and the lower light source and having an edge reflector plate group on its periphery; The wafer support structure is a static support component; The chamber is further provided with a wedge-shaped reflector assembly, which includes an upper wedge-shaped reflector and a lower wedge-shaped reflector. The heat treatment chamber has a first sidewall and a second sidewall arranged opposite to each other, as well as a third sidewall and a fourth sidewall arranged opposite to each other. The upper wedge-shaped reflector is installed on the first sidewall and the second sidewall, and the lower wedge-shaped reflector is installed on the third sidewall and the fourth sidewall, so that the upper wedge-shaped reflector and the lower wedge-shaped reflector form an orthogonally distributed spatial static light intensity compensation optical path.

[0005] In some embodiments, a heat treatment apparatus is provided, including a controller and the aforementioned millisecond annealing heat treatment chamber.

[0006] The embodiments disclosed herein employ the above-described technical solutions, which help to improve the overall light energy utilization rate.

[0007] The above overview is for illustrative purposes only and is not intended to be limiting in any way. Further aspects, embodiments, and features of this disclosure will become readily apparent from the accompanying drawings and the following detailed description, in addition to the illustrative aspects, embodiments, and features described above. Attached Figure Description

[0008] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the various drawings denote the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings depict only some embodiments provided according to this disclosure and should not be construed as limiting the scope of this disclosure.

[0009] Figure 1 This is a schematic diagram of the overall structure of the heat treatment equipment provided according to an embodiment of the present disclosure; Figure 2 This is a schematic diagram of the structure of the upper light source according to an embodiment of the present disclosure; Figure 3 This is a schematic diagram of the structure of the lower light source provided according to an embodiment of the present disclosure; Figure 4 This is a top view structural diagram of the ceiling chamber provided according to an embodiment of the present disclosure; Figure 5 This is a schematic diagram of the upper chamber surface reflector assembly provided according to an embodiment of the present disclosure; Figure 6 This is a bottom view structural diagram of the basement provided according to an embodiment of the present disclosure; Figure 7 This is a three-dimensional structural diagram of the base chamber with an angle, provided according to an embodiment of the present disclosure; Figure 8 This is a structural schematic diagram of the upper wedge-shaped reflector provided according to an embodiment of the present disclosure; Figure 9 This is a structural schematic diagram of a lower wedge-shaped reflector provided according to an embodiment of the present disclosure; Figure 10 This is a side view optical path schematic diagram of a heat treatment system provided according to an embodiment of the present disclosure.

[0010] Explanation of reference numerals in the attached drawings: 100, processing chamber; 110, top chamber; 120, bottom chamber; 130, upper lamp light source; 140, lower lamp light source; 150, wafer support structure; 160, edge reflector assembly; 300, wedge-shaped reflector assembly; 310, upper wedge-shaped reflector; 311, continuous reflective surface; 320, lower wedge-shaped reflector; 321, central main reflector; 322, side reflector; 330, groove structure; 340, raised reflective surface; 410, upper lamp reflector assembly; 420, lower lamp reflector assembly; 430, upper chamber surface reflector assembly; 440, lower chamber surface reflector assembly. Detailed Implementation

[0011] In the following description, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments can be modified in various ways without departing from the spirit or scope of this disclosure. Therefore, the drawings and description are to be considered exemplary in nature and not restrictive.

[0012] Furthermore, to better illustrate this disclosure, numerous specific details are set forth in the following detailed description. Those skilled in the art will understand that this disclosure can be practiced without certain specific details. In some instances, methods, means, components, and circuits well known to those skilled in the art have not been described in detail in order to highlight the main points of this disclosure.

[0013] Heat treatment equipment and overall chamber structure like Figure 1 As shown, in one embodiment, a heat treatment apparatus is provided, which includes a controller 20 and a processing chamber 100 for a millisecond annealing heat system. Figure 1 The upper light source 130 and the lower light source 140, located within the chamber, can be observed. Combined with... Figure 10 (Side view of the light path of the heat treatment system) This figure shows the propagation path of the radiant energy emitted by the light source inside the millisecond annealing heat treatment chamber 100 and the coordinated configuration of each reflective component.

[0014] The controller is communicatively coupled to a light source and sensors in the millisecond annealing heat treatment chamber 100 and can be configured to execute a millisecond-level heat treatment process based on a preset algorithm. In one embodiment, the controller 20 includes one or more of a microprocessor, an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or a programmable logic controller (PLC).

[0015] like Figure 1 and Figure 4As shown, the millisecond annealing heat treatment chamber 100 includes a top chamber 110, a bottom chamber 120, an upper lamp source 130 disposed in the top chamber 110, a lower lamp source 140 disposed in the bottom chamber 120, and a wafer support structure 150 located between the upper lamp source 130 and the lower lamp source 140. In some embodiments, the upper lamp source 130 provides high-intensity millisecond-level flashes (e.g., several argon arc lamps), and the lower lamp source 140 provides continuous-mode preheating radiation light (e.g., halogen lamps or continuous arc lamps). An edge reflector assembly 160 is provided around the periphery of the wafer support structure 150.

[0016] wafer support structure Combination Figure 4 (Top view of top chamber 110), showing an edge reflector assembly 160 surrounding the wafer support structure 150. In some embodiments, the wafer support structure 150 is a static support. A static support means that it does not have a dynamic drive component (e.g., a magnetic levitation rotor or gas levitation component) to drive the wafer in continuous circumferential rotation during heat treatment operation. Alternative embodiments of this static support include fixed connection structures such as multiple quartz support pins, static ceramic support rings, or silicon carbide support bases. This configuration helps to free up internal chamber space and reduce airflow interference.

[0017] Upper lamp reflector assembly, lower lamp reflector assembly and chamber surface reflector assembly like Figure 2 As shown in the schematic diagram of the upper lamp light source, the upper lamp reflector assembly 410 disposed around it is clearly illustrated. Figure 3 The diagram shown (structural schematic of the lower lamp light source) illustrates the configuration of the lower lamp reflector assembly 420. For example... Figure 4 The diagram (top view of the top chamber) shows the upper chamber surface reflector assembly 430. (See diagram for reference.) Figure 6 and Figure 7 The diagram shown (bottom view and angled schematic diagram of the lower chamber) illustrates the lower chamber surface reflector assembly 440.

[0018] In some embodiments, the millisecond annealing heat treatment chamber 100 further includes an upper lamp reflector assembly 410 and a lower lamp reflector assembly 420 respectively disposed in the top chamber 110 and the bottom chamber 120, as well as an upper chamber surface reflector assembly 430 and a lower chamber surface reflector assembly 440. The included angle of the upper lamp reflector assembly 410 is 30 to 40 degrees, and the included angle of the lower lamp reflector assembly 420 is 50 to 70 degrees. Meanwhile, the included angle between the opposing surfaces of the upper chamber surface reflector assembly 430 is 10 to 15 degrees, and the lower chamber surface reflector assembly 440 is vertically arranged. This asymmetrical optical topology configuration can generate a static spatial optical path network (such as...). Figure 10 (As shown).

[0019] wedge-shaped reflector assembly and orthogonal optical path The millisecond annealing heat treatment chamber 100 has a first sidewall and a second sidewall disposed opposite to each other, as well as a third sidewall and a fourth sidewall disposed opposite to each other. A wedge-shaped reflector assembly 300 is provided in the chamber, the wedge-shaped reflector assembly 300 including an upper wedge-shaped reflector 310 and a lower wedge-shaped reflector 320.

[0020] like Figure 5 As shown in the schematic diagram of the upper chamber surface reflector assembly 430, the upper wedge-shaped reflector 310 can be observed in the bottom region of this assembly. Figure 6 As shown in the bottom view of the bottom chamber 120, the figure illustrates the relative positions of the lower chamber surface reflector assembly 440 and the lower wedge-shaped reflector 320. Figure 7 As shown (a schematic diagram of the bottom chamber 120 with an angle), the splicing structure of the lower chamber surface reflector group 440, the lower wedge-shaped reflector 320, and its internal components (central main reflector 321 and side reflector 322) is displayed in three dimensions.

[0021] The upper wedge-shaped reflector 310 is mounted on the first and second sidewalls, and the lower wedge-shaped reflector 320 is mounted on the third and fourth sidewalls. With this configuration, the upper wedge-shaped reflector 310 and the lower wedge-shaped reflector 320 form an orthogonally distributed spatial static light intensity compensation optical path in physical space. Figure 10 This configuration helps to provide stereo radiation compensation for the optical coverage transition region between the center and edge of the wafer by utilizing the multiple reflection mechanism.

[0022] Groove structure and raised reflective surface like Figure 8 (Structural schematic diagram of the upper wedge-shaped reflector 310) and Figure 9 (A schematic diagram of the lower wedge-shaped reflector 320) shows that both the upper wedge-shaped reflector 310 and the lower wedge-shaped reflector 320 have groove structures 330 formed by subtractive processing on their surfaces. In alternative embodiments of the manufacturing process, physical subtractive processing includes one or more of CNC micron-level milling, laser etching, precision wire cutting, or chemical etching. A raised reflective surface 340 is defined between adjacent groove structures 330.

[0023] In some embodiments, all the raised reflective surfaces 340 on the same upper wedge-shaped reflector 310 or lower wedge-shaped reflector 320 are coplanar, and the normal angles of each raised reflective surface 340 are consistent. This coplanar feature ensures that multiple reflected light beams remain parallel or at a predetermined divergence angle at the microscopic level.

[0024] Static fasteners and calibration configuration In some embodiments, the wedge-shaped reflector assembly 300 is a static fixture. Its dimensions, mounting angle, and the area ratio of the groove structure 330 on the surface are configured to match the light source radiation intensity and thermal field distribution test data of the millisecond annealing heat treatment chamber 100. In specific operation and configuration methods, this matching can be implemented through the following steps for pre-calibration: First, during the final assembly stage of the heat treatment equipment 10, a test wafer containing a temperature measurement matrix is ​​placed on the static wafer support structure 150. Second, the controller 20 activates the upper light source 130 and the lower light source 140 to acquire temperature data of the test wafer from the center to the edge. Subsequently, the required luminous flux is calculated. Finally, the effective reflective area ratio to be removed from the groove structure 330 is calculated, and the above-mentioned subtractive processing is performed on the corresponding upper wedge reflector 310 and lower wedge reflector 320 accordingly. After completion, they are fastened and locked.

[0025] The splicing structure of the lower wedge-shaped reflector and the three-dimensional depth gradient Combination Figure 7 and Figure 9 In some embodiments, the lower wedge-shaped reflector 320 is a splicing assembly, which includes a central main reflector 321 and side reflectors 322 located below opposite ends of the central main reflector 321. The surfaces of the central main reflector 321 and the side reflectors 322 have groove structures 330. The central main reflector 321 is provided with transverse bolt holes for connection to the processing chamber and vertical bolt holes for connection to the side reflectors 322.

[0026] In some embodiments, the side reflector 322 has a wedge-shaped or triangular cross-section. The plane containing the side reflector 322 forms a first angle with the vertical direction, and the plane containing the central main reflector 321 forms a second angle with the vertical direction, with the first angle being greater than the second angle. This composite splicing configuration helps to form differentiated edge light intensity compensation with a three-dimensional depth gradient.

[0027] The segmented grooves and continuous reflective surface of the upper wedge-shaped reflector like Figure 8 As shown, in some embodiments, the groove structure 330 on the surface of the upper wedge-shaped reflector 310 is distributed in a segmented, spaced manner (e.g., four groove segments as shown in the figure) to define a continuous reflective surface 311 not covered by the grooves. The mixed distribution of the continuous reflective surface 311 and the raised reflective surface 340 helps to accommodate the specific optical reflection requirements of transient flashes in the top chamber 110.

[0028] Reflector substrate and optical processing In some embodiments, each reflector in the millisecond annealing heat treatment chamber 100 is made of aluminum substrate (in alternative embodiments, copper or high thermal conductivity alloy substrates with specific reflective coatings may also be used), and its reflective surface is an optical reflective surface formed by single-point diamond turning (SPDT) and coated with a protective film, so that its reflectivity in the main light intensity band of the light source reaches 90% or more.

[0029] According to the scheme of the present disclosure, by coordinating the above-mentioned static wedge reflector assembly with multiple reflector groups, it is helpful to implement spatial three-dimensional light intensity compensation in the transition area between the center and the edge of the wafer without introducing dynamic moving parts, thereby improving the uniformity of wafer irradiation during heat treatment.

[0030] In the description of this specification, it should be understood that the terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this disclosure.

[0031] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this disclosure, "multiple" means two or more, unless otherwise explicitly specified.

[0032] In this disclosure, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a communication connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this disclosure according to the specific circumstances.

[0033] In this disclosure, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0034] The foregoing disclosure provides many different implementations or examples for carrying out different structures of this disclosure. To simplify the disclosure, specific examples of components and arrangements have been described above. Of course, these are merely examples and are not intended to limit the scope of this disclosure. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various implementations and / or arrangements discussed.

[0035] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any person skilled in the art can easily conceive of various variations or substitutions within the technical scope disclosed in this disclosure, and these should all be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A heat treatment chamber, comprising a top chamber, a bottom chamber, an upper light source disposed in the top chamber, a lower light source disposed in the bottom chamber, and a wafer support structure located between the upper and lower light sources and having an edge reflector plate assembly on its periphery, characterized in that: The wafer support structure is a static support component; The cavity is also equipped with a wedge-shaped reflector assembly for balancing the light intensity in the transition area between the center and edge of the wafer; the wedge-shaped reflector assembly includes an upper wedge-shaped reflector and a lower wedge-shaped reflector. The heat treatment chamber has a first sidewall and a second sidewall arranged opposite to each other, as well as a third sidewall and a fourth sidewall arranged opposite to each other; the upper wedge-shaped reflector is installed on the first sidewall and the second sidewall, and the lower wedge-shaped reflector is installed on the third sidewall and the fourth sidewall, so that the upper wedge-shaped reflector and the lower wedge-shaped reflector form an orthogonally distributed spatial static light intensity compensation optical path.

2. The heat treatment chamber according to claim 1, characterized in that, The surfaces of both the upper and lower wedge-shaped reflectors are provided with groove structures formed by subtractive processing; a raised reflective surface is defined between adjacent groove structures.

3. The heat treatment chamber according to claim 2, characterized in that, On the same upper or lower wedge-shaped reflector, all the raised reflective surfaces are coplanar, and the included normal angles of each raised reflective surface are consistent.

4. The heat treatment chamber according to claim 2, characterized in that, The wedge-shaped reflector assembly is a static fixing component; the size and installation angle of the wedge-shaped reflector assembly, as well as the area ratio of the groove structure on the surface, are configured to match the test data of the light source radiation intensity and thermal field distribution of the heat treatment chamber.

5. The heat treatment chamber according to claim 2, characterized in that, The lower wedge-shaped reflector is a splicing assembly, including a central main reflector and side reflectors located below the opposite ends of the central main reflector; the surfaces of the central main reflector and the side reflectors are covered with the groove structure.

6. The heat treatment chamber according to claim 5, characterized in that, The side reflector has a wedge-shaped or triangular cross section; the first angle between the plane of the side reflector and the vertical direction is greater than the second angle between the plane of the central main reflector and the vertical direction, so as to form differentiated edge light intensity compensation with three-dimensional depth gradient.

7. The heat treatment chamber according to any one of claims 2 to 6, characterized in that, The groove structure on the surface of the upper wedge-shaped reflector is distributed in segments at intervals to define the continuous reflective surface not covered by the grooves.

8. The heat treatment chamber according to claim 1, characterized in that, It also includes an upper lamp reflector group and a lower lamp reflector group respectively disposed in the top chamber and the bottom chamber, as well as an upper chamber surface reflector group and a lower chamber surface reflector group; The included angle of the upper lamp reflector group is 30 degrees to 40 degrees, and the included angle of the lower lamp reflector group is 50 degrees to 70 degrees. The relative angle between the upper chamber surface reflector group and the lower chamber surface reflector group is 10 to 15 degrees, and the lower chamber surface reflector group is vertically arranged.

9. The heat treatment chamber according to claim 1, characterized in that, Each reflector in the cavity is made of aluminum substrate, and its reflective surface is an optical reflective surface formed by single-point diamond turning and coated with a protective film, so that its reflectivity in the main light intensity band of the light source reaches 90% or more.

10. A heat treatment apparatus, characterized in that, Includes a controller and a heat treatment chamber as described in any one of claims 1 to 9.

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