Semiconductor device

Abstract

A semiconductor device has a first long side and a second long side opposite to the first long side. The semiconductor device includes a semiconductor stack, a first lower contact structure, a first mesa contact structure, and a first electrode structure. The semiconductor stack has a lower portion and a mesa portion connected to the lower portion. The first lower contact structure is disposed on the lower portion. The first mesa contact structure is disposed on the mesa portion and includes a first implanted portion, a first extended portion connected to the first implanted portion, a second implanted portion separated from the first extended portion, and a second extended portion connected to the second implanted portion. The first electrode structure covers a portion of the mesa portion and is electrically connected to the first mesa contact structure.

Description

Technical Field

[0001] The present invention relates to a semiconductor device, and more particularly to a semiconductor device having a contact structure, the contact structure comprising two injection portions and two extension portions. Background Technology

[0002] In semiconductor devices, current is typically injected into a first contact electrode located on a p-type semiconductor structure and a second contact electrode located on an n-type semiconductor structure, respectively, to drive the active region to operate (e.g., emit light). However, as the aspect ratio of semiconductor devices increases, the lengths of the first and second contact electrodes also increase, thereby lengthening the current transmission distance. When the transmission distance is too long, it may lead to a deterioration in the photoelectric properties of the device, such as uneven light emission.

[0003] While existing semiconductor devices have achieved their intended use in some cases, they still fail to meet the requirements in all aspects, and therefore further improvements are still necessary. Summary of the Invention

[0004] In some embodiments, a semiconductor device is provided having a first long side and a second long side opposite to each other. The semiconductor device includes a semiconductor stack, a first lower contact structure, a first mesa contact structure, and a first electrode structure. The semiconductor stack has a lower portion and a mesa portion connected to the lower portion. The first lower contact structure is disposed in the lower portion. The first mesa contact structure is disposed in the mesa portion and includes a first injection portion, a first extension portion connected to the first injection portion, a second injection portion separated from the first extension portion, and a second extension portion connected to the second injection portion. The first electrode structure covers a portion of the mesa portion and is electrically connected to the first mesa contact structure.

[0005] In some embodiments, a semiconductor device is provided. The semiconductor device includes a semiconductor stack, a first lower contact structure, a first mesa contact structure, and a first electrode structure. The semiconductor stack has a lower portion and a mesa portion connected to the lower portion. The first lower contact structure is disposed in the lower portion and includes a first injection portion, a first extension portion connected to the first injection portion, a second injection portion separated from the first extension portion, and a second extension portion connected to the second injection portion. The first mesa contact structure is disposed in the mesa portion. The first electrode structure covers a portion of the mesa portion and is electrically connected to the first mesa contact structure.

[0006] The device of this invention can be applied to a variety of semiconductor devices. To make the features and advantages of this invention more readily understood, various embodiments will be described in detail below with reference to the accompanying drawings. Attached Figure Description

[0007] To facilitate understanding of the following detailed description, accompanying drawings are provided. As is customary in the industry, features are not necessarily drawn to scale, and dimensions may be appropriately enlarged or reduced for ease of explanation.

[0008] Figure 1 This is a top view of a semiconductor device according to some embodiments;

[0009] Figure 2 For along Figure 1 A cross-sectional view of line A-A';

[0010] Figure 3A for Figure 1 Enlarged view of a portion of the area;

[0011] Figure 3B For along Figure 3A A cross-sectional view of line B-B';

[0012] Figure 3C for Figure 1 Enlarged view of another area;

[0013] Figure 3D For along Figure 3C A cross-sectional view of the C-C' line;

[0014] Figure 4 This is a top view of a semiconductor device according to some embodiments;

[0015] Figure 5 This is a top view of a semiconductor device according to some embodiments;

[0016] Figure 6A This is a top view of a semiconductor device according to some embodiments;

[0017] Figure 6B This is a top view of a semiconductor device according to some embodiments;

[0018] Figure 7 This is a top view of a semiconductor device according to some embodiments.

[0019] Symbol Explanation

[0020] 1, 2, 4, 5, 6, 7 Semiconductor devices

[0021] 10 Semiconductor stack

[0022] 10a Bottom surface

[0023] 100 First Semiconductor Structure

[0024] 101 Active (Active) Region

[0025] 102 Second Semiconductor Structure

[0026] 11 Insulation Structure

[0027] 111 First Opening

[0028] 112 Second opening

[0029] 113 Third opening

[0030] 114 Fourth opening

[0031] 115 Fifth Opening

[0032] 116 The sixth opening

[0033] 117 The seventh opening

[0034] 118 Eighth opening

[0035] 119 Ninth Opening

[0036] 12 First lower contact structure

[0037] 13 First platform contact structure

[0038] 17 Second lower contact structure

[0039] 18 Second platform contact structure

[0040] 19 Third platform contact structure

[0041] A-A', B-B', CC - line of sight

[0042] 120 Third Injection Section

[0043] 121 Third Extension

[0044] 122 Fourth Injection Section

[0045] 130 First Injection Section

[0046] 132 Second Injection Section

[0047] 170 Fifth Injection Section

[0048] 180 Seventh Injection Section

[0049] 182 Eighth Injection Section

[0050] 190 Ninth Injection Section

[0051] 192 Tenth Injection Section

[0052] 123 Fourth Extension

[0053] 131 First Extension

[0054] 133 Second Extension

[0055] 171 Fifth Extension

[0056] 181 Seventh Extension

[0057] 183 Eighth Extension

[0058] 191 Ninth Extension

[0059] 193 Tenth Extension

[0060] 133E First Bend Section

[0061] 14 First Electrode Structure

[0062] 183E Second Bend Section

[0063] 15 Second Electrode Structure

[0064] 16 bases

[0065] 160 Adhesive layer

[0066] LS1 First Long Side

[0067] SS1 First Short Side

[0068] LS2 Second Long Side

[0069] SS2 Second Short Side

[0070] C1 First Corner

[0071] LP lower part

[0072] C2 Second Corner

[0073] C3 Third Corner

[0074] C4 Fourth Corner

[0075] G1 First Gap

[0076] MP tabletop

[0077] G2 Second Gap

[0078] D1 First Distance

[0079] d1 First longest distance

[0080] D2 Second Distance

[0081] d2 Second longest distance

[0082] a1 width

[0083] a2 Second shortest distance,

[0084] a2' Fourth Shortest Distance

[0085] a3 Second shortest distance

[0086] a4 Third Shortest Distance

[0087] W1 First Width

[0088] W2 Second Width

[0089] L1 First Length

[0090] L2 Second Length

[0091] L3 Third Length

[0092] L4 Fourth Length

[0093] L5 Fifth Length

[0094] L6 Sixth Length

[0095] L7 Seventh Length

[0096] L8 Eighth Length

[0097] W3 Third Width

[0098] W4 Fourth Width

[0099] W5 Fifth Width

[0100] W6 Sixth Width

[0101] W7 Seventh Width

[0102] W8 Eighth Width Detailed Implementation

[0103] The apparatus of various embodiments is described in detail below. It should be understood that the following description provides various different embodiments to illustrate aspects of the invention. The specific elements and arrangements described below clearly state some embodiments and are by way of example only, not limitation. Furthermore, for clarity, the same or corresponding reference numerals may be used in different embodiments to represent the same or corresponding elements.

[0104] Furthermore, the ordinal numbers used in the specification and claims, such as "first," "second," and "third," are only used to distinguish elements and do not indicate that there must be an earlier or existing element with the same name, nor do they indicate the order of one element relative to another, or the order of steps in the manufacturing method; these ordinal numbers are only used to distinguish different elements with the same name.

[0105] For clarity, some features are omitted in some drawings, and only partial structures are shown schematically. In some embodiments, additional features may be added to the apparatus described below. In other embodiments, certain features may be replaced or omitted, and additional steps may be added before, during, and / or after the method of forming the apparatus. Some steps may be replaced or omitted, and the order of some steps may be reversed.

[0106] Figure 1 This is a top view of semiconductor device 1. Figure 2 For along Figure 1 A cross-sectional view of line A-A'. For simplicity, Figure 1 The omitted part of the structure. Figure 3A for Figure 1 Enlarged view of a specific area. Figure 3B For along Figure 3A A cross-sectional view of line B-B'. Figure 3C for Figure 1 Another enlarged view of a section. Figure 3D For along Figure 3C A cross-sectional view of the C-C' line.

[0107] Reference Figure 1 As can be seen from a top-down view, semiconductor device 1 has a first long side LS1 and a second long side LS2 opposite to each other, a first short side SS1 connecting the two long sides, and a second short side SS2 opposite to the first short side. In this embodiment, device 1 is rectangular in shape. The intersection of the first long side LS1 and the first short side SS1 forms a first corner C1, and the intersection of the second long side LS2 and the second short side SS2 forms a second corner C2. The first corner C1 and the second corner C2 are not adjacent in either the horizontal or vertical direction. Furthermore, the intersection of the second long side LS2 and the first short side SS1 forms a third corner C3, and the intersection of the first long side LS1 and the second short side SS2 forms a fourth corner C4.

[0108] Reference Figure 2 As can be seen in the cross-section, the semiconductor device 1 includes a semiconductor stack 10, an insulating structure 11, a first electrode structure 14, and a second electrode structure 15. The semiconductor device 1 may optionally include a first lower contact structure 12 and / or a first mesa contact structure 13. The semiconductor stack 10 sequentially includes a first semiconductor structure 100, an active region 101, and a second semiconductor structure 102. In some embodiments, the first semiconductor structure 100 has a first conductivity type, and the second semiconductor structure 102 has a second conductivity type different from the first conductivity type. For example, the first structure 100 is n-type, the second structure 102 is p-type, or vice versa. The first and second semiconductor structures may provide electrons and holes, or holes and electrons, respectively.

[0109] The semiconductor stack 10 includes a lower portion LP and a mesa portion MP connected thereto. The lower portion LP includes a portion of a first semiconductor structure 100. The mesa portion MP includes another portion of the first semiconductor structure 100, an active region 101, and a second semiconductor structure 102.

[0110] like Figure 2 The first mesa contact structure 13 is located on the mesa surface MP and contacts the second semiconductor structure 102. More specifically, the first mesa contact structure 13 is located between the second semiconductor structure 102 and the first electrode structure 14. (Refer to...) Figure 1 The first platform contact structure 13 is close to the second long side LS2 and far away from the first long side LS1.

[0111] exist Figure 1 In one embodiment, the first mesa contact structure 13 includes a first injection portion 130, a first extension portion 131 connected to the first injection portion 130, a second injection portion 132 separated from the first extension portion 131, and a second extension portion 133 connected to the second injection portion 132. A first gap G1 is formed between the first extension portion 131 and the second injection portion 132. By simultaneously providing the injection portions 130 and 132 and / or the first extension portion 131 and the second extension portion 133, the current transmission distance can be shortened, and the luminous intensity of the active region below the end of the extension portion (the position away from the injection portion) can be increased.

[0112] In some embodiments, the first injection portion 130 is located near the second corner C2, and the first injection portion 130, the first extension portion 131, the second injection portion 132 and the second extension portion 133 are arranged along the second long side LS2 from the second short side SS2 toward the first short side SS1.

[0113] In some embodiments, the first extension 131 and / or the second extension 133 are substantially parallel to the first long side LS1. In other embodiments, the first extension 131 and / or the second extension 133 may form an angle of about 0.1° to 5° relative to the first long side LS1, or the first extension 131 and the second extension 133 may form an angle of about 0.1° to 5° between them.

[0114] In some embodiments, the first injection portion 130 has a first width W1, and the first extension portion 131 has a second width W2 smaller than the first width W1. Here, the first width W1 and the second width W2 are parallel to the first short side SS1. The insulating structure 11 does not cover the first injection portion 130 and the second injection portion 132, but covers the first extension portion 131 and the second extension portion 133, which serve as current transmission paths. The wider injection portion is used for connection with the electrode structure, which can improve the electrical connection between the contact structure and the electrode structure thereon. Similarly, the second injection portion 132 may have a third width W3, and the second extension portion 133 may have a fourth width W4 smaller than the third width W3. In some embodiments, the first width W1 and the third width W3 are the same, and / or the second width W2 and the fourth width W4 are the same.

[0115] In some embodiments, the first injection portion 130 has a first length L1, and the first extension portion 131 has a second length L2 greater than the first length L1. Here, the first length L1 and the second length L2 are parallel to the first long side LS1. The second injection portion 132 may have a third length L3, and the second extension portion 133 may have a fourth length L4 greater than L3. In some embodiments, the first length L1 and the third length L3 are the same, and / or the second length L2 is less than the fourth length L4. In other embodiments, the sum of the fourth length L4 and the third length L3 is greater than the sum of the second length L2 and the first length L1.

[0116] like Figure 2 The first lower contact structure 12 is located on the lower LP and contacts the first semiconductor structure 100, more specifically, it is located between the first semiconductor structure 100 and the second electrode structure 15. (Refer to...) Figure 1 The first lower contact structure 12 is located near the first long side LS1 and far from the second long side LS2. The first lower contact structure 12 includes a third injection section 120, a third extension section 121 connected to the third injection section 120, a fourth injection section 122 separated from the third extension section 121, and a fourth extension section 123 connected to the fourth injection section 122. That is, the first lower contact structure 12 also includes two injection sections and two extension sections. Through the third injection section 120, the fourth injection section 122, and / or the third extension section 121 and the fourth extension section 123, the current transmission distance can be shortened, thereby increasing the luminous intensity of the active region below the end of the extension section (far from the injection section).

[0117] In some embodiments, the third injection portion 120 is located near the first corner C1, and the third injection portion 120, the third extension portion 121, the fourth injection portion 122, and the fourth extension portion 123 are arranged along the first long side LS1 from the first short side SS1 toward the second short side SS2. In some embodiments, the third extension portion 121 and / or the fourth extension portion 123 are substantially parallel to the first long side LS1. In some embodiments, the third extension portion 121 and / or the fourth extension portion 123 may form an angle of about 1° to 5° relative to the first long side LS1. An angle of about 1° to 5° may also be formed between the third extension portion 121 and the fourth extension portion 123.

[0118] In some embodiments, the first injection portion 130 and the first extension portion 131 correspond (e.g., adjacent or side by side) to the fourth injection portion 122 and the fourth extension portion 123; while the second injection portion 132 and the second extension portion 133 correspond to the third injection portion 120 and the third extension portion 121.

[0119] In some embodiments, the third injection portion 120 has a fifth width W5, and the third extension portion 121 has a sixth width W6 that is smaller than the fifth width W5. The fourth injection portion 122 has a seventh width W7, and the fourth extension portion 123 has an eighth width W8 that is smaller than the seventh width W7. In some embodiments, the fifth width W5 is the same as the seventh width W7, the sixth width W6 is the same as the eighth width W8, and / or the second width W2 is the same as the fourth width W4.

[0120] In some embodiments, the third injection portion 120 has a fifth length L5, and the third extension portion 121 has a sixth length L6 greater than the fifth length L5. The fourth injection portion 122 has a seventh length L7, and the fourth extension portion 123 has an eighth length L8 greater than the seventh length L7. In some embodiments, the fifth length L5 is the same as the seventh length L7, and / or the sixth length L6 is less than the eighth length L8. In some embodiments, the sum of the fifth length L5 and the sixth length L6 is less than the sum of the seventh length L7 and the eighth length L8.

[0121] In some embodiments, the dimensions (e.g., length or width) of the third injection portion 120, the fourth injection portion 122, the first injection portion 130, and the second injection portion 132 may be the same. In some embodiments, the second width W2 and the fourth width W4 are both greater than the sixth width W6 and the eighth width W8. In some embodiments, the first gap G1 between the first extension portion 131 and the second injection portion 132 is smaller than the second gap G2 between the third extension portion 121 and the fourth injection portion 122. In other embodiments, the first gap G1 may be equal to or greater than the second gap G2.

[0122] In some embodiments, the first distance D1 between the first tabletop contact structure 13 and the second long side LS2 is less than the second distance D2 between the first lower contact structure 12 and the first long side LS1. In some embodiments, the first longest distance d1 between the first injection portion 130 and the second extension portion 133 is less than the second longest distance d2 between the third injection portion 120 and the fourth extension portion 123. In other embodiments, the second longest distance d2 may be less than or equal to the first longest distance d1.

[0123] like Figure 2 The insulating structure 11 covers the semiconductor stack 10, the first mesa contact structure 13, and the first lower contact structure 12. The insulating structure 11 includes a first opening 111 to expose the first injection portion 130, and a second opening 112 (see...). Figures 3A-3B ) to expose the second injection section 132, and includes a third opening 113 to expose the third injection section 120 and a fourth opening 114 (see Figures 3C-3D The fourth injection portion 122 is exposed. More specifically, the insulating structure 11 covers portions of the first semiconductor structure 100, the second semiconductor structure 102, the first mesa contact structure 13 (i.e., the first extension 131 and the second extension 133), and the first lower contact structure 12 (i.e., the third extension 121 and the fourth extension 123) to prevent unintended electrical connections and protect the components.

[0124] like Figure 2 and Figures 3A-3B The first electrode structure 14 is electrically connected to the first tabletop contact structure 13. The first electrode structure 14 covers a portion of the tabletop portion MP and a portion of the lower portion LP, and also covers a portion of the first injection portion 130, the first extension portion 131, the second injection portion 132, and the second extension portion 133. More specifically, the first electrode structure 14 contacts the first injection portion 130 and the second injection portion 132 through a first opening 111 and a second opening 112, respectively. In some embodiments, the first electrode structure 14 is conformally disposed on the first tabletop contact structure 13 and the insulating structure 11.

[0125] like Figure 2 and Figures 3C-3D The second electrode structure 15 is electrically connected to the first lower contact structure 12. The second electrode structure 15 covers a portion of the platform surface MP and a portion of the lower LP, and also covers a portion of the third injection portion 120, the third extension portion 121, the fourth injection portion 122, and the fourth extension portion 123. More specifically, the second electrode structure 15 contacts the third injection portion 120 and the fourth injection portion 122 through the third opening 113 and the fourth opening 114, respectively. In some embodiments, the second electrode structure 15 is conformally disposed on the first lower contact structure 12 and the insulating structure 11.

[0126] In some embodiments, the semiconductor device 1 may further include a substrate 16 and / or an adhesive layer 160 located between the semiconductor stack 10 and the substrate 16. In some embodiments, the substrate 16 may be a growth substrate of the semiconductor stack 10. In other embodiments, the substrate 16 may be omitted. The substrate 16 may be a single layer or a multilayer stack. The semiconductor stack 10 has a bottom surface 10a facing the substrate 16, and the bottom surface 10a is a roughened surface. In this embodiment, since the semiconductor stack 10 is first grown on another growth wafer (wafer), and then bonded to the substrate 16 via the adhesive layer 160 and transferred by dicing, the larger roughness of the bottom surface 10a helps to improve the mechanical strength after bonding and improve the light extraction efficiency.

[0127] In some embodiments, the first semiconductor structure 100, the active region 101, and the second semiconductor structure 102 may comprise III-V group semiconductor materials, such as aluminum (Al), gallium (Ga), arsenic (As), phosphorus (P), or indium (In). For example, they may be binary compound semiconductors (such as GaAs, GaP, GaN, InP), ternary compound semiconductors (such as InGaAs, AlGaAs, GaInP, AlInP, InGaN, AlGaN), or quaternary compound semiconductors (such as AlGaInAs, AlGaInP, AlInGaN, InGaAsP, InGaAsN, AlGaAsP).

[0128] In some embodiments, a semiconductor stack 10 may be formed on a substrate 16 by an epitaxial fabrication process. The epitaxial method may be metal-organic vapor deposition (MOCVD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), or a combination thereof.

[0129] In some embodiments, the first semiconductor structure 100 and the second semiconductor structure 102 may be doped such that the first semiconductor structure 100 contains a first dopant and exhibits a first conductivity type, and the second semiconductor structure 102 contains a second dopant and exhibits a second conductivity type. Doping may be performed in situ during epitaxial growth, or by ion implantation after epitaxy, or a combination of both. Suitable dopants include, for example, magnesium (Mg), zinc (Zn), silicon (Si), carbon (C), or tellurium (Te).

[0130] In some embodiments, the active region 101 can be used to emit light, the wavelength of which can be visible or invisible, depending on the material composition of the active region. For example, when the active region contains InGaN, it can emit blue or deep blue light with a peak wavelength of 400-490 nm, green light with a peak wavelength of 490-550 nm, or red light with a peak wavelength of 560-650 nm. When the active region 101 contains AlGaN, it can emit ultraviolet light with a peak wavelength of 250-400 nm. When the active region 101 contains InGaAs, InGaAsP, AlGaAs, or AlGaInAs, it can emit infrared light with a peak wavelength of 700-1700 nm. When the active region 101 contains InGaP or AlGaInP, it can emit red light with a peak wavelength of 610-700 nm, or yellow light with a peak wavelength of 530-600 nm.

[0131] In some embodiments, the insulating structure 11 may comprise a single layer or multiple layers of dielectric material, such as oxides, nitrides, polymers, or combinations thereof, such as silicon dioxide (SiO2), silicon nitride (SiO2), etc. x N y The insulating structure 11 may have a reflectivity greater than 80% for light emitted from the active region 101, for example, 85% to 100%. In some embodiments, the insulating structure 11 may include a distributed Bragg reflector (DBR).

[0132] In some embodiments, the first mezzanine contact structure 13, the first lower contact structure 12, the first electrode structure 14, or the second electrode structure 15 may comprise a conductive material, such as a metal, a metal compound, or a combination thereof. Metals include, for example, tin (Sn), copper (Cu), gold (Au), silver (Ag), nickel (Ni), indium (In), platinum (Pt), palladium (Pd), iridium (Ir), titanium (Ti), chromium (Cr), tungsten (W), aluminum (Al), molybdenum (Mo), magnesium (Mg), zinc (Zn), germanium (Ge), beryllium (Be), or alloys thereof. Metal compounds such as tantalum nitride (TaN), titanium nitride (TiN), tungsten silicide (WSi2), indium tin oxide (ITO), indium oxide (In2O3), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), zinc gallium oxide (GZO), indium tungsten oxide (IWO), zinc oxide (ZnO), indium zinc oxide (IZO), or indium gallium zinc oxide (IGZO) are used. In some embodiments, the materials of the above structures may be the same or different.

[0133] In some embodiments, these contact or electrode structures may be formed by methods such as electroplating, physical vapor deposition (e.g., sputtering), chemical vapor deposition, or combinations thereof.

[0134] In some embodiments, the substrate 16 may comprise silicon (Si), diamond (C), silicon carbide (SiC), sapphire, glass, gallium oxide (Ga2O3), gallium nitride (GaN), aluminum gallium nitride (AlGaN), aluminum nitride (AlN), gallium phosphide (GaP), gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), or combinations thereof, such as silicon carbide, sapphire, or gallium nitride. In some embodiments, the substrate 16 has high transmittance to light emitted from the active region 101, for example, greater than 85%. The adhesive layer 160 connects the substrate 16 to the semiconductor stack 10 and may be a single layer or multiple layers. The material may comprise a transparent insulating material, such as titanium dioxide (TiO2), niobium pentoxide (Nb2O5), silicon dioxide (SiO2), aluminum oxide (Al2O3), silicon nitride (SiN), or BCB.

[0135] Figure 4 Semiconductor device 2 is shown, and semiconductor device 2 and Figure 1 Similar to the semiconductor device 1 shown, the differences are as follows: In some embodiments, the shapes of the third injection portion 120 and the fourth injection portion 122 differ from those of the first injection portion 130 and the second injection portion 132. For example, the third and fourth injection portions are approximately rectangular in shape. The central axis of the third extension 121 does not pass through the center of the third injection portion 120, and the central axis of the fourth extension 123 does not pass through the center of the fourth injection portion 122. In contrast, the shapes of the first injection portion 130 and the second injection portion 132 may be circular. The central axis of the first extension 131 passes through the center of the first injection portion 130, and the central axis of the second extension 133 passes through the center of the second injection portion 132.

[0136] like Figure 4 The semiconductor stack 10 has a width a1. A first shortest distance a2 exists between the first mesa contact structure 13 and the first lower contact structure 12. A second shortest distance a3 exists between the first mesa contact structure 13 and the stack side closest to the second long side LS2. A third shortest distance a4 exists between the first lower contact structure 12 and the stack side closest to the first long side LS1. In some embodiments, the first shortest distance a2 is greater than the second shortest distance a3. The second shortest distance a3 may be the same as or different from a4 (e.g., less than or greater than a4). In some embodiments, the ratio a2 / a1 of the first shortest distance a2 to the width a1 is 0.35 to 0.75 (e.g., 0.4, 0.5, 0.6, 0.7). The ratio a3 / a1 of the second shortest distance a3 to the width a1 is 0.1 to 0.5 (e.g., 0.2, 0.3, 0.4). The ratio of the first shortest distance a2 to the second shortest distance a3, a2 / a3, is 0.7 to 7.5 (e.g., 1, 3, 5, 7).

[0137] Figure 5 Semiconductor device 4 is shown. Compared to Figure 4The semiconductor device 2 shown, Figure 5 The illustrated semiconductor device 4 further includes a second lower contact structure 17 parallel to the first long side LS1. The second lower contact structure 17 is located on the lower LP, close to the second long side LS2 and far from the first long side LS1. That is, from a top view, the mesa surface MP and the first mesa surface contact structure 13 are located between the first lower contact structure 12 and the second lower contact structure 17. By providing the first and second lower contact structures near the long sides (LS1 and LS2) of the semiconductor device respectively, photoelectric characteristics (e.g., near-field uniformity) can be further improved.

[0138] In some embodiments, the first lower contact structure 12 includes a third injection portion 120 and a third extension portion 121 connected thereto. The second lower contact structure 17 includes a fifth injection portion 170 and a fifth extension portion 171 connected thereto. The third injection portion 120 and the fifth injection portion 170 may be located at adjacent corners, such as a first corner C1 and a third corner C3.

[0139] In some embodiments, the first lower contact structure 12 and the second lower contact structure 17 are symmetrical with respect to the first mesa contact structure 13, or symmetrical with respect to the central axis of the semiconductor device 4. Their shapes, dimensions (length or width), and / or materials may be the same or similar.

[0140] like Figure 5 The width of the semiconductor stack 10 is a1. The distance between the first mesa contact structure 13 and the first lower contact structure 12 is a2, and the distance between the mesa contact structure 13 and the second lower contact structure 17 is a fourth shortest distance a2'. The distance between the first mesa contact structure 13 and the side closest to the second long side LS2 is a second shortest distance a3. In some embodiments, the first shortest distance a2 is the same as the fourth shortest distance a2'. Figure 5 In some of the embodiments shown, a3 / a1 is 0.3 to 0.5, and is greater than or equal to 0.3. Figure 4 The a3 / a1 shown.

[0141] In some embodiments, Figure 5 The second lower contact structure 17 can be similar to Figure 1 The first lower contact structure 12 shown includes a fifth injection portion 170 and a fifth extension portion 171 connected thereto, and the third extension portion 121 and / or the fifth extension portion 171 are parallel to LS1 and LS2. In other embodiments, the first lower contact structure 12 further includes a fourth injection portion separate from the third extension portion 121, and a fourth extension portion connected to the fourth injection portion; the second lower contact structure 17 may also further include a sixth injection portion separate from the fifth extension portion 171 and a sixth extension portion connected thereto.

[0142] Similar to Figures 3A-3BThe semiconductor device 1 shown, Figure 5 The semiconductor device 4 shown also includes an insulating structure 11 having a first opening 111 to expose a first injection portion 130, a second opening 112 to expose a second injection portion 132, a third opening 113 to expose a third injection portion 120, and a fifth opening 115 to expose a fifth injection portion 170. The first extension 131, the second extension 133, the third extension 121, and the fifth extension 171 are covered by the insulating structure 11.

[0143] Figure 6A Semiconductor device 5 is shown. Compared to Figure 5 The semiconductor device 4 and semiconductor device 5 shown further include a second mesa contact structure 18 located on the mesa portion MP. The first mesa contact structure 13 and the second mesa contact structure 18 are located between the first lower contact structure 12 and the second lower contact structure 17; the first mesa contact structure 13 is closer to the first long side LS1 and farther from the second long side LS2, and the second mesa contact structure 18 is closer to the second long side LS2 and farther from the first long side LS1. By providing two mesa contact structures, photoelectric characteristics (such as near-field uniformity) can be further improved.

[0144] In some embodiments, the second mesa contact structure 18 includes a seventh injection portion 180, a seventh extension 181 connected thereto, an eighth injection portion 182 separated from the seventh extension 181, and an eighth extension 183 connected to the eighth injection portion 182. In some embodiments, the first injection portion 130 of the first mesa contact structure 13 and the seventh injection portion 180 of the second mesa contact structure 18 are close to the first short side SS1 and far from the second short side SS2. The first mesa contact structure 13 and the second mesa contact structure 18 may be symmetrical about the central axis of the semiconductor device 5, and their shapes, dimensions (length or width) and / or materials may be the same or similar.

[0145] In some embodiments, the ends of the second extension 133 and the eighth extension 183 are bent close to each other. More specifically, the second extension 133 includes a first bent segment 133E, and the eighth extension 183 includes a second bent segment 183E, the distance between the two bent segments being less than the distance between the second injection portion 132 and the eighth injection portion 182. This bent segment design allows for more uniform current distribution within the semiconductor device 5.

[0146] Similar to Figure 5 The semiconductor device 4 shown, Figure 6AThe semiconductor device 5 shown also includes an insulating structure 11 having a first opening 111, a second opening 112, a third opening 113, a fifth opening 115, and an additional sixth opening 116 to expose a seventh injection portion 180 and a seventh opening 117 to expose an eighth injection portion 182. The first extension 131, the second extension 133, the third extension 121, the fifth extension 171, the seventh extension 181, and the eighth extension 183 are covered by the insulating structure 11.

[0147] Figure 6B Semiconductor device 6 is shown. Compared to Figure 6A The semiconductor devices 5 and 6 shown are shown to have first and second mesa contact structures that each contain only one injection portion and one extension portion, rather than two injection portions and two extension portions. That is, the second injection portion 132, the second extension portion 133, the eighth injection portion 182, and the eighth extension portion 183 are omitted.

[0148] Figure 7 Semiconductor device 7 is shown. Compared to Figure 5 The semiconductor device 4 and semiconductor device 7 shown further include a second mesa contact structure 18 and a third mesa contact structure 19 located on the mesa portion MP. The first, second, and third mesa contact structures are all located between the first lower contact structure 12 and the second lower contact structure 17. The first mesa contact structure 13 is located near the first long side LS1, the third mesa contact structure 19 is located near the second long side LS2, and the second mesa contact structure 18 is located between the two long sides. By configuring three or more mesa contact structures in the semiconductor device, photoelectric characteristics (such as near-field uniformity) can be further improved.

[0149] In some embodiments, the shape, size (length or width) and / or material of the first, second and third tabletop contact structures may be the same or similar.

[0150] In some embodiments, the second tabletop contact structure 18 includes a seventh injection portion 180, a seventh extension portion 181 connected thereto, an eighth injection portion 182 separate from the seventh extension portion 181, and an eighth extension portion 183 connected to the eighth injection portion 182. The third tabletop contact structure 19 includes a ninth injection portion 190, a ninth extension portion 191 connected thereto, a tenth injection portion 192 separate from the ninth extension portion 191, and a tenth extension portion 193 connected to the tenth injection portion 192. In some embodiments, the first injection portion 130 of the first tabletop contact structure 13, the seventh injection portion 180 of the second tabletop contact structure 18, and the ninth injection portion 190 of the third tabletop contact structure 19 are all close to the first short side SS1 and far from the second short side SS2.

[0151] Similar to Figure 6A Semiconductor device 5 shown. Figure 7 The semiconductor device 7 shown also includes an insulating structure 11 having a first opening 111, a second opening 112, a third opening 113, a fifth opening 115, a sixth opening 116, and a seventh opening 117, and an additional eighth opening 118 to expose a ninth injection portion 190 and a ninth opening 119 to expose a tenth injection portion 192. The insulating structure 11 covers the first extension 131, the second extension 133, the third extension 121, the fifth extension 171, the seventh extension 181, the eighth extension 183, the ninth extension 191, and the tenth extension 193.

[0152] In summary, the semiconductor device provided by this invention includes a lower contact structure and / or a mesa contact structure having two injection portions and two extension portions. By providing two injection portions, the current transmission distance can be shortened, improving the problem of uneven light emission. Furthermore, by adjusting the relative position, size, number, or detailed structure of the lower contact structure and the mesa contact structure, the photoelectric characteristics of the semiconductor device can be further tuned to better meet design requirements.

[0153] The foregoing outlines some features of the embodiments to enable those skilled in the art to better understand the present invention. Those skilled in the art should understand that the present invention can serve as the basis for designing or modifying other processes and structures to achieve the same purpose and benefits; such equivalent changes do not depart from the spirit and scope of the present invention, and those skilled in the art can make various substitutions or alterations without departing from the spirit and scope of the present invention.

Claims

1. A semiconductor device having a first long side and a second long side opposite to the first long side, the semiconductor device comprising: A semiconductor stack having a lower portion and a mesa connected to the lower portion; The first lower contact structure is provided on the lower part; The first table surface contact structure disposed on the table surface includes: First injection section; A first extension is connected to the first injection portion; The second injection section is separated from the first extension section; and The second extension is connected to the second injection section; and The first electrode structure covers a portion of the table surface and is electrically connected to the first table surface contact structure.

2. The semiconductor device of claim 1, wherein the first extension and / or the second extension is parallel to the first long side.

3. The semiconductor device of claim 1, further comprising: The second electrode structure covers a portion of the lower part and is electrically connected to the first lower contact structure.

4. The semiconductor device of claim 1, wherein the first injection portion has a first width, and the first extension portion has a second width smaller than the first width.

5. The semiconductor device of claim 1, wherein the first mesa contact structure is close to the second long side and far from the first long side.

6. The semiconductor device of claim 1, wherein the first lower contact structure comprises: Third injection section; The third extension is connected to the third injection section; The fourth injection section is separated from the third extension section; as well as The fourth extension is connected to the fourth injection section.

7. The semiconductor device of claim 6, wherein the third extension and / or the fourth extension is parallel to the first long side.

8. The semiconductor device of claim 1, further comprising an insulating structure covering the semiconductor stack, the first mesa contact structure and the first lower contact structure, wherein the first injection portion and the second injection portion are exposed by the insulating structure.

9. The semiconductor device of claim 8, wherein the insulating structure includes a first opening to expose the first injection portion and a second opening to expose the second injection portion.

10. The semiconductor device of claim 1, further comprising: A second lower contact structure is disposed on the lower part, wherein the second lower contact structure is close to the second long side and far away from the first long side.

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