Display module, manufacturing method and display device

Abstract

The application provides a display module, comprising a connecting metal layer, a chip on film and a pad block, the connecting metal layer is arranged in a substrate film layer; the connecting metal layer is additionally arranged in the substrate and is reused as a back side lead-out electrode, the pad block is arranged in a preset area on the back side of the substrate as a turning structure, the connecting part of the chip on film and the electrode contacts the substrate at a near vertical angle, the internal circuit of the display panel and the chip on film are electrically interconnected on the back side of the substrate through silver paste lap joints, the display panel front surface is prevented from being provided with a binding pad, which is helpful to realize an extremely narrow frame or even a frameless design, in addition, the connecting part of the chip on film vertically contacts the substrate through the pad block, and the connecting metal layer is arranged, so that the height difference of the silver paste lap joint is reduced, the lap joint is prevented from being easily broken due to the too large height difference, and the reliability is improved.

Description

Technical Field

[0001] This invention relates to the field of display technology, and in particular to an ultra-narrow bezel or bezel-less display module, its manufacturing method, and a display device. Background Technology

[0002] With the continuous advancement of display technology and the ever-increasing demands of consumers for visual experience, terminal display products are developing towards narrower bezels or even "zero bezels." To achieve a near-zero bezel display effect, panel design typically requires back-bonding and silver paste overlapping processes. However, in actual manufacturing processes, there is a significant height difference between the conductive silver paste between the COF (Chip on Film) pads and the panel pads, making the silver paste overlapping area prone to breakage, which in turn leads to problems such as decreased display reliability.

[0003] Therefore, under the premise of achieving a near-zero bezel display effect, how to effectively solve the risk of breakage and reliability issues caused by the large drop of the conductive silver paste bonding line has become one of the key issues that need to be solved in the current development of OLED display panel technology to achieve an extremely bezel-less display. Summary of the Invention

[0004] In view of this, the present invention provides a display module, a manufacturing method, and a display device to solve the reliability problem caused by large height differences in conductive silver paste overlap. Specifically, the present invention provides a display module structure, a manufacturing method, and a display device that can solve the reliability problem caused by the easy breakage of silver paste overlap lines in the back connection of ultra-narrow bezel or bezel-less display modules due to large height differences.

[0005] In a first aspect, the present invention provides a display module comprising: a display panel, the display panel including a substrate and an array film layer, the substrate including a first organic layer, a connecting metal layer and a second organic layer sequentially stacked thereon; a first connection structure disposed on the light-emitting side of the substrate away from the display panel, the first connection structure being patterned from the connecting metal layer and electrically connected to the metal layer of the array film layer; a flip-chip film, at least a portion of the display driver chip being integrated on the flip-chip film, the flip-chip film including a second connection structure electrically connected to the display driver chip, the second connection structure including a first connection portion; and a third connection structure, the first connection structure being electrically connected to the first connection portion through the third connection structure; wherein the contact surface between the first connection portion and the third connection structure and the substrate has an angle greater than or equal to 45°.

[0006] Furthermore, in conjunction with the first aspect, the substrate further includes a first buffer layer and a second buffer layer stacked between the first organic layer and the second organic layer, with a connecting metal layer located between the first buffer layer and the second buffer layer.

[0007] Preferably, the first organic layer and the second organic layer are made of polyimide, and the first buffer layer and the second buffer layer are inorganic layers.

[0008] More preferably, the first buffer layer includes a SiOx film layer and an amorphous silicon film layer, which are stacked sequentially along the direction from the substrate to the display panel. The SiOx film layer has a thickness of 3000 Å to 6000 Å, and the amorphous silicon film layer has a thickness of 20 Å to 40 Å.

[0009] More preferably, the second buffer layer comprises a SiOx film layer with a thickness of 3000 Å to 6000 Å.

[0010] More preferably, the connecting metal layer includes at least one of molybdenum or titanium aluminum titanium, and the thickness of the connecting metal layer is 1000 Å to 3000 Å.

[0011] More preferably, the thickness of the first organic layer is 10 μm to 20 μm, and the thickness of the second organic layer is 5 μm to 8 μm.

[0012] Furthermore, in conjunction with the first aspect, the third connection structure is a silver paste bonding line, with the first end of the third connection structure in contact with the first connection structure and the second end in contact with the first connection portion; wherein, the flip-chip film is transitioned by a padding block so that the first connection portion forms an angle with the substrate.

[0013] Preferably, the angle between the first connecting portion and the substrate is in the range of 45° to 90°.

[0014] Preferably, the angle between the first connecting portion and the substrate is 90°.

[0015] Preferably, the raised block is hemispherical.

[0016] In conjunction with the first aspect, along the thickness direction of the flip-chip film, the flip-chip film is sequentially stacked with a flip-chip film substrate, a flip-chip film conductive layer, and a flip-chip film insulating layer. The display driver chip is integrated on the film insulating layer and electrically connected to the film conductive layer through vias. The second connection structure is formed by patterning the film conductive layer.

[0017] Furthermore, the second connection structure also includes a second connection portion, which is electrically connected to the flexible circuit board.

[0018] Furthermore, the flip-chip insulating layer at least partially covers the second connection structure, with the first and second connection portions of the second connection structure exposed.

[0019] Preferably, the exposed length of the first connecting portion is 5μm to 10μm, and the thickness of the second end of the third connecting structure is 5μm to 10μm.

[0020] In conjunction with the first aspect, the raised block is a hemispherical raised block, and the flip-chip film climbs up the slope to the arc surface of the hemispherical raised block; preferably, the slope angle is 10° to 80°.

[0021] Further, the OLED film layer is located on the side of the array film layer away from the substrate; the encapsulation layer is located on the side of the OLED film layer away from the substrate; the optically transparent adhesive layer is located on the side of the encapsulation layer away from the substrate; and the glass cover is located on the side of the optically transparent adhesive layer away from the substrate. Along the direction away from the substrate, the encapsulation layer is sequentially stacked with a first sub-encapsulation layer, a second sub-encapsulation layer, and a third sub-encapsulation layer. The first sub-encapsulation layer is an inorganic encapsulation layer, including at least one of SiOx or SiNX, with a thickness of 0.5 μm to 1 μm. The second sub-encapsulation layer is an organic encapsulation layer, including at least one of epoxy acrylate, polyurethane acrylate, and polyester acrylate, with a thickness of 1 μm to 20 μm. The third sub-encapsulation layer is an inorganic encapsulation layer, including at least one of SiOx or SiNX.

[0022] Preferably, the second sub-encapsulation layer is formed by inkjet printing.

[0023] Secondly, the present invention provides a method for fabricating a display module, the method comprising: providing a substrate, the substrate comprising a first organic layer, a first buffer layer, a connecting metal layer, a second buffer layer, and a second organic layer; fabricating a display panel on a first side of the substrate, the display panel comprising an array film layer, an OLED film layer, and an encapsulation layer sequentially stacked along a direction away from the substrate, wherein the array film layer is electrically connected to the connecting metal layer located in the substrate through vias; sequentially attaching a polarizing layer, an optically transparent adhesive layer, and a cover glass over the encapsulation layer; exposing the connecting metal layer in a first connecting region on a second side of the substrate by laser etching to form a first connecting structure, wherein the metal of the connecting metal layer in the region where the first connecting structure is located is separated from the metal of other regions of the connecting metal layer; attaching a hemispherical pad between the first connecting structure and a predetermined region of the flip-chip film, wherein the arc-shaped surface of the hemispherical pad is disposed away from the substrate.

[0024] Furthermore, in conjunction with the second aspect, in some embodiments, the method further includes: applying double-sided adhesive to the flip-chip film setting area to form an adhesive structure, wherein the flip-chip film integrates at least a portion of a display driver chip, and the exposed portion of the flip-chip film is provided with a first connection portion of a second connection structure electrically connected to the driver chip.

[0025] Furthermore, in some embodiments, the flip-chip film is attached to the adhesive structure and the first connection portion spans the hemispherical pad and makes perpendicular contact with the substrate.

[0026] Furthermore, in some embodiments, applying silver paste electrically connects the first connecting structure to the first connecting portion, and laser sintering solidifies the silver paste to form a silver paste overlap line, with one end of the silver paste overlap line connected to the first connecting structure and the other end connected to the first connecting portion.

[0027] Furthermore, in some embodiments, a protective adhesive is applied to form a protective structure, which covers the silver paste overlay lines.

[0028] Furthermore, in some embodiments, the method further includes that the first organic layer and the second organic layer are made of polyimide, and the first buffer layer and the second buffer layer are inorganic layers; the first buffer layer includes a SiOx film layer and an amorphous silicon film layer, which are stacked sequentially along the direction from the substrate to the display panel, wherein the SiOx film layer has a thickness of 3000 Å to 6000 Å, and the amorphous silicon film layer has a thickness of 20 Å to 40 Å; the second buffer layer includes a SiOx film layer with a thickness of 3000 Å to 6000 Å; the connecting metal layer includes at least one of molybdenum or titanium aluminum titanium, and the connecting metal layer has a thickness of 1000 Å to 3000 Å; the first organic layer has a thickness of 10 μm to 20 μm, and the second organic layer has a thickness of 5 μm to 8 μm.

[0029] Thirdly, the present invention provides a display device, which includes a display module provided in any of the embodiments of the first aspect above, or a display module prepared by the preparation method provided in any of the embodiments of the second aspect above.

[0030] In the display module provided by this invention, by adding a connecting metal layer inside the substrate and reusing it as a back-side lead-out electrode, i.e., the first connecting structure, and electrically connecting it to the connecting part of the flip-chip film in a predetermined area on the back side of the substrate through a third connecting structure, the back-side electrical interconnection between the internal circuit of the display panel and the flip-chip film is realized. The display module provided by this invention can avoid setting bonding pads on the front side of the display panel, thereby freeing up the originally necessary bezel area, which helps to realize an extremely narrow bezel or even a bezel-less design. In addition, by setting a certain angle between the connecting part of the flip-chip film and the substrate, the conductive silver paste does not need to climb further, which can reduce the height difference of the silver paste bonding line and avoid the bonding line from breaking easily due to excessive height difference, thereby improving reliability.

[0031] It should be understood that the description in this section is not intended to identify key or important features of embodiments of the invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0032] To more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0033] Figure 1 This is a structural model diagram of the silver paste overlap on the back of the display module in related technologies;

[0034] Figure 2 This is a simplified model diagram of the display module structure provided in the embodiments of the present invention; Figure 3 This is a simplified model diagram of the related structure of the flip-chip thin film provided in the embodiments of the present invention; Figure 4 This is a simplified model diagram of the flip-chip thin film connector provided in an embodiment of the present invention; Figure 5 This is a simplified model diagram of the display module structure provided in another embodiment of the present invention; Figure 6 This is a simplified flowchart of the preparation method steps provided in the embodiments of the present invention; Figure 7 This is a simplified flowchart of the preparation method steps provided in the embodiments of the present invention; Figure 8 This is a simplified flowchart of the preparation method steps provided in the embodiments of the present invention; Figure 9 This is a partial structural model diagram of a display device provided by the present invention.

[0035] Explanation of reference numerals in the attached figures: 10-Substrate; 101-First organic layer; 102-First buffer layer; 103-Second buffer layer; 104-Second organic layer; 105 - Connecting metal layer; 20 - Display panel; 201 - First sub-encapsulation layer; 202 - Second sub-encapsulation layer; 203 - Third sub-encapsulation layer; 210 - Array film layer; 220 - OLED film layer; 30 - Polarizing layer; 40 - Optical transparent adhesive layer; 50 - Cover glass; 601 - First connecting structure; 602 - Third connecting structure; 603 - Protective structure (protective adhesive); 80 - Raising block; 90 - Flip film; 901 - Flip film substrate; 902 - Flip-chip conductive layer (second connection structure); 9021 - First connection part; 9022 - Second connection part; 903 - Cryogenic film insulating layer; 100 - Display module; 200 - Display device. Detailed Implementation

[0036] To enable those skilled in the art to better understand the present invention, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0037] As described in the background section, terminal display products in related technologies are developing towards narrower bezels or even "zero bezels." To achieve a near-zero bezel display effect, panel design typically requires back-bonding and silver paste bonding processes. (Reference) Figure 1 In actual manufacturing processes, COF (Chip on Film) is typically attached to the back of the display module using double-sided adhesive NCF. The thickness of both the COF and the NCF is usually around 55μm, resulting in a significant height difference between the silver paste overlap lines between the COF pad connection structure and the display panel pad connection structure. This makes the silver paste overlap area prone to breakage, leading to decreased display reliability. Some designers have proposed embedding the COF partially into the substrate. While this design can significantly reduce the overlap line height difference, embedding the COF into the substrate can compress the chip integrated within the COF, potentially causing a decrease in reliability. (Reference) Figure 1This is a simplified structural model of a display module with extremely narrow bezels or even "zero bezels" in related technologies. The display module includes a substrate 10A, a display panel 20A, a cover glass 50A, a flip-chip film 60A, a first connection structure 601A, a second connection structure 602A, a third connection structure 603A, and a protective structure 606A. The flip-chip film is attached to the substrate using double-sided adhesive. The first connection structure 601A is connected to the driving circuit layer (array film layer, not shown) in the display panel 20A via a via (not shown). The second connection structure 602A connects to the display driver chip integrated within the flip-chip film 60A. The first connection structure 601A and... The second connection structure 602A is electrically connected to the third connection structure 603A. Typically, the first connection structure is a display panel pad, the second connection structure is a flip-chip film pad, and the third connection structure is an overlap line formed after silver paste coating, sintering, and curing. Since the flip-chip film 60A and the double-sided adhesive 605A have a combined thickness of approximately 55μm, there is a significant height difference between the first connection structure 601A and the second connection structure 602A. This results in a high risk of breakage for the cured silver paste overlap line. With the trend towards ultra-narrow bezels and zero bezels in terminal display products, seeking a reliable structural design to eliminate the risk of silver paste overlap line breakage has become one of the key problems that need to be solved in this field. It should be noted that, for the purpose of distinguishing it from the accompanying drawings and reference numerals provided in the embodiments of this invention, the reference numerals are... Figure 1 The structures shown are distinguished from those in the accompanying drawings of the present invention by reference numerals. In the illustrations, the English abbreviations such as PI (polyimide, flexible substrate), NCF (double-sided adhesive), COF (crystal-on-film), and CG (cover glass) are abbreviations for panel structures known in the display panel industry.

[0038] In view of this, firstly, referring to the appendix Figure 2This invention provides a display module comprising: a display panel 20, the display panel 20 including a substrate 10 and an array film layer 210, the substrate 10 including a first organic layer 101, a connecting metal layer 105 and a second organic layer 104 stacked sequentially; a first connection structure 601 disposed on the light-emitting side of the substrate 10 away from the display panel 20, the first connection structure 601 being patterned from the connecting metal layer 105 and electrically connected to the metal layer of the array film layer 210; a flip-chip film, at least a portion of the display driver chip being integrated on the flip-chip film, the flip-chip film including a second connection structure electrically connected to the display driver chip, the second connection structure including a first connection portion 9021; and a third connection structure 602, the first connection structure 601 being electrically connected to the first connection portion 9021 through the third connection structure 602; wherein the contact surface between the first connection portion 9021 and the third connection structure 602 is perpendicular to the substrate 10. In this embodiment, the third connection structure 602 is a silver paste bonding line made of conductive silver paste. The first end of the third connection structure 602 contacts the first connection structure 601, and the second end contacts the first connection portion 9021. The contact surface between the first connection portion 9021 and the third connection structure 602 is perpendicular to the substrate 10, so that the conductive silver paste can be coated to the first connection portion 9021 according to the required thickness without further climbing. This can achieve the thinning benefit of at least one thickness of the flip-chip substrate 901 and one thickness of the flip-chip electrical layer, thereby reducing the height difference of the third connection structure 602 and reducing the risk of the third connection structure 602 breaking due to the large height difference.

[0039] In conjunction with the first aspect, continue to refer to Figure 2 In some embodiments, the substrate 10 further includes a first buffer layer 102 and a second buffer layer 103 stacked between the first organic layer 101 and the second organic layer 104, with a connecting metal layer 105 located between the first buffer layer 102 and the second buffer layer 103. This structure is the basic structure of the substrate 10, providing stable support for other film layer structures disposed thereon.

[0040] Furthermore, the first organic layer 101 and the second organic layer 104 are made of polyimide, and the first buffer layer 102 and the second buffer layer 103 are inorganic layers.

[0041] Furthermore, the first buffer layer 102 includes a SiOx film layer and an amorphous silicon film layer. The SiOx film layer and the amorphous silicon film layer are stacked sequentially along the direction from the substrate 10 to the display panel 20. The thickness of the SiOx film layer is 3000Å ​​to 6000Å, and the thickness of the amorphous silicon film layer is 20Å to 40Å.

[0042] Furthermore, the second buffer layer 103 includes a SiOx film layer with a thickness of 3000 Å to 6000 Å.

[0043] Furthermore, the connecting metal layer 105 includes at least one of molybdenum or titanium aluminum titanium, and the thickness of the connecting metal layer 105 is 1000 Å to 3000 Å.

[0044] Furthermore, the thickness of the first organic layer 101 is 10 μm to 20 μm, and the thickness of the second organic layer 104 is 5 μm to 8 μm.

[0045] Preferably, the raised block 80 is hemispherical.

[0046] See attached document Figure 3 Along the thickness direction of the flip-chip film, the flip-chip film 90 is sequentially stacked with a flip-chip film substrate 901, a flip-chip film conductive layer 902, and a flip-chip film insulating layer 903. The display driver chip is integrated on the film insulating layer and electrically connected to the film conductive layer through vias. The film conductive layer can be made of copper (Cu) metal material, or at least one of metals with excellent conductivity such as aluminum (Al) or silver (Ag). For clarity, the film conductive layer in the figure is exemplified by copper. The second connection structure is formed by patterning the film conductive layer.

[0047] Furthermore, referring to Figure 4 The second connection structure also includes a second connection part 9022, which is electrically connected to the flexible circuit board.

[0048] Furthermore, continue to refer to Figure 4 The flip-chip insulating layer 903 at least partially covers the second connection structure, and the first connection portion 9021 and the second connection portion 9022 of the second connection structure are exposed.

[0049] Preferably, the exposed length of the first connecting portion 9021 is 5μm to 10μm, and the thickness of the second end of the third connecting structure 602 is 5μm to 10μm.

[0050] In conjunction with the first aspect, in some embodiments, the shim block 80 is a hemispherical shim block 80, and the flip-chip film climbs up the ramp to the arc surface of the hemispherical shim block 80; preferably, the slope angle of the ramp is 10° to 80°, and it is close to 90° near the substrate 10 so that the first connecting part 9021 can abut against the substrate 10 at a 90° angle, while providing corresponding support.

[0051] Furthermore, in conjunction with the above-described implementation methods, continue to refer to... Figure 2The display module provided by the present invention further includes an OLED film layer 220 located on the side of the array film layer 210 away from the substrate 10; an encapsulation layer located on the side of the OLED film layer 220 away from the substrate 10; an optically transparent adhesive layer 40 located on the side of the encapsulation layer away from the substrate 10; and a glass cover plate located on the side of the optically transparent adhesive layer 40 away from the substrate 10. The above films are conventional films in an OLED display module. In a further structure, along the direction away from the substrate 10, the encapsulation layer is sequentially stacked with a first sub-encapsulation layer 201, a second sub-encapsulation layer 202, and a third sub-encapsulation layer 203. The first sub-encapsulation layer 201 is an inorganic encapsulation layer, including at least one of SiOx or SiNX, with a thickness of 0.5μm to 1μm. The second sub-encapsulation layer 202 is an organic encapsulation layer, including at least one of epoxy acrylate, polyurethane acrylate, and polyester acrylate, with a thickness of 1μm to 20μm. The third sub-encapsulation layer 203 is an inorganic encapsulation layer, including at least one of SiOx or SiNX.

[0052] Preferably, the second sub-encapsulation layer 202 is formed by inkjet printing.

[0053] In conjunction with the first aspect, in another embodiment, referring to Figure 5 The present invention also provides another display module, which includes: a display panel 20, the display panel 20 including a substrate 10 and an array film layer 210, the substrate 10 including a first organic layer 101, a connecting metal layer 105 and a second organic layer 104 stacked sequentially; a first connection structure 601 is provided on the light-emitting side of the substrate 10 away from the display panel 20, the first connection structure 601 is patterned by the connecting metal layer 105 and electrically connected to the metal layer of the array film layer 210; a flip-chip film, at least a portion of the display driver chip is integrated on the flip-chip film, the flip-chip film includes a second connection structure, the second connection structure is electrically connected to the display driver chip, the second connection structure includes a first connection portion 9021; a third connection structure 602, the first connection structure 601 is electrically connected to the first connection portion 9021 through the third connection structure 602; wherein, the contact surface between the first connection portion 9021 and the third connection structure 602 has an angle greater than or equal to 45° with the substrate 10. Similarly, in this embodiment, the third connection structure 602 is a silver paste bonding line made of conductive silver paste. The first end of the third connection structure 602 contacts the first connection structure 601, and the second end contacts the first connection portion 9021. The contact surface between the first connection portion 9021 and the third connection structure 602 is perpendicular to the substrate 10, so that the conductive silver paste can be coated to the first connection portion 9021 according to the required thickness without further climbing. This can achieve the thinning benefit of at least one thickness of the flip-chip substrate 901 and one thickness of the flip-chip electrical layer, thereby reducing the height difference of the third connection structure 602 and reducing the risk of the third connection structure 602 breaking due to the large height difference.

[0054] In conjunction with the above implementation methods, continue to refer to Figure 5 The substrate 10 also includes a first buffer layer 102 and a second buffer layer 103 stacked between the first organic layer 101 and the second organic layer 104, with a connecting metal layer 105 located between the first buffer layer 102 and the second buffer layer 103. This structure is the basic structure of the substrate 10, providing stable support for other film layers disposed thereon.

[0055] Furthermore, the first organic layer 101 and the second organic layer 104 are made of polyimide, and the first buffer layer 102 and the second buffer layer 103 are inorganic layers.

[0056] Furthermore, the first buffer layer 102 includes a SiOx film layer and an amorphous silicon film layer. The SiOx film layer and the amorphous silicon film layer are stacked sequentially along the direction from the substrate 10 to the display panel 20. The thickness of the SiOx film layer is 3000Å ​​to 6000Å, and the thickness of the amorphous silicon film layer is 20Å to 40Å.

[0057] Furthermore, the second buffer layer 103 includes a SiOx film layer with a thickness of 3000 Å to 6000 Å.

[0058] Furthermore, the connecting metal layer 105 includes at least one of molybdenum or titanium aluminum titanium, and the thickness of the connecting metal layer 105 is 1000 Å to 3000 Å.

[0059] Furthermore, the thickness of the first organic layer 101 is 10 μm to 20 μm, and the thickness of the second organic layer 104 is 5 μm to 8 μm.

[0060] Preferably, the raised block 80 is hemispherical.

[0061] In conjunction with the first aspect, refer to Figure 3 Along the thickness direction of the flip-chip film, the flip-chip film 90 is sequentially stacked with a flip-chip film substrate 901, a flip-chip film conductive layer 902, and a flip-chip film insulating layer 903. The display driver chip is integrated on the film insulating layer and electrically connected to the film conductive layer through vias. The film conductive layer can be made of copper (Cu) metal material, or at least one of metals with excellent conductivity such as aluminum (Al) or silver (Ag). For clarity, the film conductive layer in the figure is exemplified by copper. The second connection structure is formed by patterning the film conductive layer.

[0062] Furthermore, referring to Figure 4 The second connection structure also includes a second connection part 9022, which is electrically connected to the flexible circuit board.

[0063] Furthermore, continue to refer to Figure 4The flip-chip insulating layer 903 at least partially covers the second connection structure, and the first connection portion 9021 and the second connection portion 9022 of the second connection structure are exposed.

[0064] Preferably, the exposed length of the first connecting portion 9021 is 5μm to 10μm, and the thickness of the second end of the third connecting structure 602 is 5μm to 10μm.

[0065] In conjunction with the above embodiments, the shim block 80 is a hemispherical shim block 80, and the flip-chip film climbs up the slope to the arc surface of the hemispherical shim block 80; preferably, the slope angle is 10° to 80°.

[0066] Furthermore, in conjunction with the above embodiments, the display module provided by the present invention further includes an OLED film layer 220 located on the side of the array film layer 210 away from the substrate 10; an encapsulation layer located on the side of the OLED film layer 220 away from the substrate 10; an optically transparent adhesive layer 40 located on the side of the encapsulation layer away from the substrate 10; and a glass cover plate located on the side of the optically transparent adhesive layer 40 away from the substrate 10. All of the above film layers are conventional film layers in an OLED display module. In a further structure, along the direction away from the substrate 10, the encapsulation layer is sequentially stacked with a first sub-encapsulation layer 201, a second sub-encapsulation layer 202, and a third sub-encapsulation layer 203. The first sub-encapsulation layer 201 is an inorganic encapsulation layer, including at least one of SiOx or SiNX, with a thickness of 0.5 μm to 1 μm; the second sub-encapsulation layer 202 is an organic encapsulation layer, including at least one of epoxy acrylate, polyurethane acrylate, and polyester acrylate, with a thickness of 1 μm to 20 μm; and the third sub-encapsulation layer 203 is an inorganic encapsulation layer, including at least one of SiOx or SiNX.

[0067] Preferably, in the above embodiment, the second sub-encapsulation layer 202 is formed by inkjet printing.

[0068] In the display module provided by the present invention, by adding a connecting metal layer 105 inside the substrate 10 and reusing it as a back-side lead-out electrode, namely the first connecting structure 601, and electrically connecting it to the connecting part of the flip-chip film in a preset area on the back side of the substrate 10 through a third connecting structure 602, the back-side electrical interconnection between the internal circuit of the display panel 20 and the flip-chip film is realized. The display module provided by the present invention can avoid setting bonding pads on the front side of the display panel 20, thereby freeing up the originally necessary bezel area, which helps to realize an extremely narrow bezel or even a bezel-less design. In addition, by setting a certain angle between the connecting part of the flip-chip film and the substrate 10, the conductive silver paste does not need to climb further, which can reduce the height difference of the silver paste bonding line and avoid the bonding line from breaking easily due to excessive height difference, thereby improving reliability.

[0069] Secondly, the present invention provides a method for manufacturing a display module, referring to... Figure 6The preparation method includes: S100: Provides substrate 10.

[0070] The substrate 10 includes a first organic layer 101, a first buffer layer 102, a connecting metal layer 105, a second buffer layer 103, and a second organic layer 104; S200: A display panel 20 is fabricated on the first side of the substrate 10.

[0071] The display panel 20 includes an array film layer 210, an OLED film layer 220 and an encapsulation layer stacked sequentially along a direction away from the substrate 10, wherein the array film layer 210 is electrically connected to the connection metal layer 105 located in the substrate 10 through a via.

[0072] S300: A polarizing layer 30, an optically transparent adhesive layer 40, and a cover glass 50 are sequentially attached above the encapsulation layer.

[0073] S400: A first connection structure 601 is formed by laser etching to expose the connection metal layer 105 in the first connection area on the second side of the substrate 10. The metal of the connection metal layer 105 in the area where the first connection structure 601 is located is isolated from the metal of other areas of the connection metal layer 105.

[0074] Reference Figure 8 The preparation method further includes, S500: attaching a hemispherical pad 80, attaching the hemispherical pad 80 between the first connection structure 601 and the preset area of ​​the flip-chip film, with the arc surface of the hemispherical pad 80 being set away from the substrate 10.

[0075] Furthermore, in conjunction with the second aspect, in some embodiments, the method further includes: S600: applying double-sided adhesive to the flip-chip film setting area to form an adhesive structure; attaching the flip-chip film to the adhesive structure such that the first connecting portion 9021 spans the hemispherical pad 80 and is in perpendicular contact with the substrate 10. In some embodiments, the flip-chip film may also be attached to the adhesive structure such that the first connecting portion 9021 spans the hemispherical pad 80 and is set at an angle of 45° to 90° to the substrate 10.

[0076] The flip-chip film integrates at least a portion of the display driver chip, and the exposed portion of the flip-chip film is provided with a first connection portion 9021 of a second connection structure that is electrically connected to the driver chip.

[0077] S700: Applying silver paste makes the first connecting structure 601 electrically connected to the first connecting part 9021. Laser sintering and curing the silver paste forms a silver paste connection line. One end of the silver paste connection line is connected to the first connecting structure 601, and the other end is connected to the first connecting part 9021.

[0078] S710: Apply protective adhesive to form protective structure 603, and protective structure 603 covers the silver paste overlay line.

[0079] Furthermore, the preparation method provided in the second aspect of the present invention also includes a method for preparing a flip-chip thin film, the method comprising: S800: Preparation of flip-chip thin films.

[0080] Specifically, refer to Figure 7 This includes etching the required wires and pads into the conductive layer on the flip-chip substrate 901, the structure of which can be referenced. Figure 3 and Figure 4 That is, a second connection structure is formed by patterning and etching the flip-chip conductive layer 902 on the flip-chip substrate 901. The second connection structure includes a first connection portion 9021 and a second connection portion 9022. As mentioned above, the second connection portion 9022 is used to electrically connect the FPC flexible circuit board, and the first connection portion 9021 is used to electrically connect one end of the third connection structure 602.

[0081] The flip-chip film also includes a flip-chip insulating layer 903 and a display driver chip (IC). The flip-chip insulating layer 903 is disposed in the attachment area of ​​the driver chip and has vias that are electrically connected to the flip-chip conductive layer 902. The pins of the display driver chip are disposed facing the flip-chip insulating layer 903 and are electrically connected to the corresponding connection part of the second connection structure through the vias on the flip-chip insulating layer 903.

[0082] In other embodiments of the present invention, a display device 200 is also provided, such as... Figure 9 As shown, the display device includes the display module 100 provided in any embodiment of the present invention. Therefore, the display device provided in the embodiments of the present invention also has the beneficial effects described in any of the above embodiments. Figure 9 This is a schematic diagram of the structure of a display device 200 provided in an embodiment of the present invention, with reference to... Figure 9 The display device 200 is the application terminal of the display module 100 provided by the present invention, and may include, but is not limited to, the following categories: television, laptop, desktop monitor, tablet computer, digital camera, smart bracelet, smart glasses, vehicle display, medical equipment, industrial control equipment, touch interactive terminal, etc. The embodiments of the present invention do not make any special limitations on this.

[0083] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A display module, characterized in that, include: The display panel includes a substrate and an array of film layers. The substrate includes a first organic layer, a connecting metal layer, and a second organic layer that are sequentially stacked. The substrate has a first connection structure on the light-emitting side away from the display panel. The first connection structure is formed by patterning the connection metal layer and is electrically connected to the metal layer of the array film layer. A flip-chip film, wherein at least a portion of the display driver chip is integrated on the flip-chip film, the flip-chip film includes a second connection structure, the second connection structure being electrically connected to the display driver chip, and the second connection structure including a first connection portion; A third connection structure is provided, wherein the first connection structure is electrically connected to the first connection portion via the third connection structure; wherein... The contact surface between the first connecting part and the third connecting structure has an angle greater than or equal to 45° with the substrate.

2. The display module according to claim 1, characterized in that, The substrate further includes a first buffer layer and a second buffer layer stacked between the first organic layer and the second organic layer, and the connecting metal layer is located between the first buffer layer and the second buffer layer; wherein... The first organic layer and the second organic layer are made of polyimide, and the first buffer layer and the second buffer layer are inorganic layers. Preferably, the first buffer layer includes a SiOx film layer and an amorphous silicon film layer, which are arranged along the direction from the substrate to the display panel. The SiOx film layer and the amorphous silicon film layer are stacked sequentially, wherein the thickness of the SiOx film layer is 3000Å ​​to 6000Å and the thickness of the amorphous silicon film layer is 20Å to 40Å. Preferably, the second buffer layer comprises a SiOx film layer with a thickness of 3000 Å to 6000 Å; Preferably, the connecting metal layer comprises at least one of molybdenum or titanium aluminum titanium, and the thickness of the connecting metal layer is 1000 Å to 3000 Å; Preferably, the thickness of the first organic layer is 10 μm to 20 μm, and the thickness of the second organic layer is 5 μm to 8 μm.

3. The display module according to claim 2, characterized in that, The third connection structure is a silver paste bonding wire, with the first end of the third connection structure contacting the first connection structure and the second end contacting the first connection part; The flip-chip film is transitioned by a shim block so that the first connecting portion forms an angle with the substrate; Preferably, the included angle is 45° to 90°; Preferably, the included angle is 90°; Preferably, the raised block is hemispherical.

4. The display module according to claim 3, characterized in that, Along the thickness direction of the flip-chip film, the flip-chip film is sequentially stacked with a flip-chip film substrate, a flip-chip film conductive layer and a flip-chip film insulating layer. The display driver chip is integrated on the film insulating layer and electrically connected to the film conductive layer through a via. The second connection structure is formed by patterning the film conductive layer. The second connection structure further includes a second connection portion, which is electrically connected to the flexible circuit board; The flip-chip insulating layer at least partially covers the second connection structure, and the first connection portion and the second connection portion of the second connection structure are exposed. Preferably, the exposed length of the first connecting portion is 5μm to 10μm, and the thickness of the second end of the third connecting structure is 5μm to 10μm.

5. The display module according to claim 3, characterized in that, The raised block is a hemispherical raised block, and the flip-chip film climbs up the slope to the arc surface of the hemispherical raised block; preferably, the slope angle of the slope is 10° to 80°.

6. The display module according to any one of claims 1-5, characterized in that, Also includes: The OLED film layer is located on the side of the array film layer away from the substrate; The encapsulation layer is located on the side of the OLED film layer away from the substrate; An optically transparent adhesive layer is located on the side of the encapsulation layer away from the substrate; A glass cover plate is located on the side of the optically transparent adhesive layer away from the substrate; wherein... Along the direction away from the substrate, the encapsulation layer is sequentially stacked with a first sub-encapsulation layer, a second sub-encapsulation layer, and a third sub-encapsulation layer. The first sub-encapsulation layer is an inorganic encapsulation layer, including at least one of SiOx or SiNX, with a thickness of 0.5 μm to 1 μm. The second sub-encapsulation layer is an organic encapsulation layer, including at least one of epoxy acrylate, polyurethane acrylate, and polyester acrylate, with a thickness of 1 μm to 20 μm. The third sub-encapsulation layer is an inorganic encapsulation layer, including at least one of SiOx or SiNX. Preferably, the second sub-encapsulation layer is formed by inkjet printing.

7. A method for manufacturing a display module, characterized in that, include: A substrate is provided, the substrate comprising a first organic layer, a first buffer layer, a connecting metal layer, a second buffer layer, and a second organic layer; A display panel is fabricated on a first side of the substrate. The display panel includes an array film layer, an OLED film layer, and an encapsulation layer sequentially stacked along a direction away from the substrate. The array film layer is electrically connected to the connecting metal layer located in the substrate through a via. A polarizing layer, an optically transparent adhesive layer, and a cover glass are sequentially attached above the encapsulation layer. A first connection structure is formed by laser etching in a first connection region on the second side of the substrate to expose the connection metal layer, wherein the metal of the connection metal layer in the region where the first connection structure is located is isolated from the metal of other regions of the connection metal layer. A hemispherical shim is attached between the first connecting structure and the preset area of ​​the flip-chip film, with the arc-shaped surface of the hemispherical shim being positioned away from the substrate.

8. The preparation method according to claim 7, characterized in that, Also includes: Double-sided adhesive is applied to the area where the flip-chip film is disposed to form an adhesive structure. The flip-chip film integrates at least a portion of the display driver chip. The exposed portion of the flip-chip film is provided with a first connection portion of a second connection structure that is electrically connected to the driver chip. The flip-chip film is attached to the adhesive structure such that the first connecting portion crosses the hemispherical pad and makes perpendicular contact with the substrate; Applying silver paste makes the first connecting structure electrically connected to the first connecting part, and laser sintering solidifies the silver paste to form a silver paste overlap line. One end of the silver paste overlap line is connected to the first connecting structure, and the other end is connected to the first connecting part. A protective adhesive is applied to form a protective structure that covers the silver paste overlap line.

9. The preparation method according to claim 8, characterized in that, The first organic layer and the second organic layer are made of polyimide, and the first buffer layer and the second buffer layer are inorganic layers. The first buffer layer includes a SiOx film layer and an amorphous silicon film layer, which are arranged along the direction from the substrate to the display panel. The SiOx film layer and the amorphous silicon film layer are stacked sequentially, wherein the thickness of the SiOx film layer is 3000Å ​​to 6000Å and the thickness of the amorphous silicon film layer is 20Å to 40Å. The second buffer layer includes a SiOx film layer with a thickness of 3000 Å to 6000 Å; The connecting metal layer includes at least one of molybdenum or titanium aluminum titanium, and the thickness of the connecting metal layer is 1000 Å to 3000 Å. The thickness of the first organic layer is 10 μm to 20 μm, and the thickness of the second organic layer is 5 μm to 8 μm.

10. A display device, characterized in that, The display device includes a display module as described in any one of claims 1-6, or a display module prepared by the preparation method as described in any one of claims 7-9.

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