Adsorption device and method for manufacturing an adsorption device

Abstract

The present application provides an adsorption device capable of inhibiting generation of temperature unevenness and capable of temperature adjustment, and a manufacturing method of the adsorption device. An adsorption device (1) is provided with: an adsorption unit (3) having a chuck configured to adsorb a workpiece (W); a base (2) including an adsorption surface (21) provided with the adsorption unit (3) and a non-adsorption surface (23) as a surface opposite to the adsorption surface (21); a temperature control pipe (4) disposed at the non-adsorption surface (23) and configured to allow a temperature control medium to flow therethrough; and a thermal diffusion layer (5) having a thermal conductivity of 60 W / m·K or more and an apparent density of 10 g / cm 3 Hereinafter, the temperature control pipe (4) is coated.

Description

Technical Field

[0001] This invention relates to an adsorption device and its manufacturing method. Background Technology

[0002] Adsorption devices such as electrostatic chucks or vacuum chucks include a substrate and adsorption units disposed on the substrate. Hereinafter, the side of the substrate with the adsorption units will be referred to as the adsorption surface, and the side opposite the adsorption surface will be referred to as the non-adsorption surface. To adjust the temperature of the workpiece to be adsorbed, the adsorption device is sometimes configured to be temperature-adjustable. For example, in a vapor deposition apparatus used to manufacture organic electroluminescence (organic EL) displays, uneven temperature distribution of the substrate held by the adsorption device can affect quality, thus requiring more uniform temperature adjustment. Various structures are known as temperature adjustment methods.

[0003] As a temperature regulation mechanism, it is possible to directly form a water channel, which serves as the flow path for the temperature control medium, within the substrate. However, substrates with such built-in water channels are difficult to manufacture. In particular, when the substrate is made of ceramic, a pair of plate-shaped ceramics, at least one of which has grooves forming the water channels, need to be pressure-fired to join them, resulting in high material and processing costs. Furthermore, the manufacturing difficulty is particularly high due to the need for a calcination furnace of a corresponding size. Alternatively, a temperature control module with built-in water channels could be considered, making it contact the non-absorbent surface of the substrate. In this case, the device would become larger due to the increased plate thickness. In addition, poor contact between the substrate and the temperature control module could also lead to uneven temperature distribution.

[0004] In terms of making temperature-adjustable adsorption devices easy to manufacture at low cost and compact, it is possible to arrange temperature-controlled piping, which is configured to allow the flow of temperature-controlled media, on the non-adsorption surface of a substrate. Patent Document 1 discloses an electrostatic chuck in which at least a portion of the temperature-controlled piping is embedded in the non-adsorption surface of a substrate.

[0005] [Existing Technical Documents]

[0006] [Patent Literature]

[0007] [Patent Document 1] Japanese Patent Application Publication No. 2024-178768 Summary of the Invention

[0008] [The problem the invention aims to solve]

[0009] If the temperature control piping is only placed on the non-adsorption surface of the substrate, it is difficult to transmit the temperature evenly to the entire workpiece, which may result in uneven temperature distribution.

[0010] The present invention was made in view of this situation, and provides an adsorption device and a method for manufacturing the same, wherein the adsorption device suppresses the generation of temperature unevenness and is configured to be temperature-adjustable.

[0011] [Technical means to solve the problem]

[0012] According to the present invention, an adsorption device is provided, comprising: an adsorption unit having a suction cup configured to adsorb a workpiece; a substrate comprising: an adsorption surface and a non-adsorption surface, wherein the adsorption surface is provided with the adsorption unit, and the non-adsorption surface is the surface opposite to the adsorption surface; a temperature control pipe disposed on the non-adsorption surface and configured to allow the flow of a temperature control medium; and a heat diffusion layer covering the temperature control pipe, wherein the heat diffusion layer has a thermal conductivity of 60 W / m·K or higher and an apparent density of 10 g / cm³. 3 the following.

[0013] Furthermore, according to the present invention, a method for manufacturing an adsorption device is provided, comprising: a substrate preparation step, wherein a substrate is prepared, the substrate comprising an adsorption surface and a non-adsorption surface, the adsorption surface being provided with an adsorption unit, the adsorption unit having a suction cup configured to adsorb a workpiece, and the non-adsorption surface being the side opposite to the adsorption surface; an arrangement step, wherein a temperature-controlled pipe configured to allow the flow of a temperature-controlled medium is arranged on the non-adsorption surface; and a heat diffusion layer formation step, wherein a heat diffusion layer is formed, wherein the heat diffusion layer covers the temperature-controlled pipe, the heat diffusion layer having a thermal conductivity of 60 W / m·K or higher and an apparent density of 10 g / cm³. 3 the following.

[0014] [The effects of the invention]

[0015] In the adsorption device of the present invention, a temperature control pipe is provided on the non-adsorption surface of the substrate as a temperature adjustment means. Since the temperature control pipe is covered by a heat diffusion layer made of a highly thermally conductive material, the temperature is distributed approximately evenly, and the generation of temperature unevenness is suppressed. Furthermore, since the heat diffusion layer is configured with a relatively low density, it can absorb displacement or strain caused by differences in the coefficients of thermal expansion of various parts, thus preventing cracks or peeling and improving durability. Furthermore, the temperature range in which temperature adjustment can be performed can be expanded. Attached Figure Description

[0016] Figure 1 This is a schematic structural diagram of the adsorption device according to this embodiment.

[0017] Figure 2 yes Figure 1 The II-II arrow view.

[0018] Figure 3 yes Figure 1 The III-III arrow view.

[0019] Figure 4 This is an example of a flowchart of the manufacturing method of the adsorption device according to this embodiment.

[0020] Figure 5 This indicates the state after the substrate preparation process.

[0021] Figure 6 This indicates the state after the trench formation process.

[0022] Figure 7 This indicates the state after the configuration process.

[0023] Figure 8 This indicates the state after the heat diffusion layer is formed.

[0024] Explanation of icon numbers

[0025] 1: Adsorption device

[0026] 2: Matrix

[0027] 21: Adsorption surface

[0028] 23: Non-adsorption surface

[0029] 25: Trench

[0030] 3: Adsorption Unit

[0031] 31: Adsorption electrode

[0032] 33: Dielectric layer

[0033] 311: Positive electrode

[0034] 313: Negative electrode

[0035] 4: Temperature control piping

[0036] 5: Heat diffusion layer

[0037] p: Configuration spacing

[0038] S1, S2, S3, S4: Process

[0039] W: Workpiece Detailed Implementation

[0040] Hereinafter, embodiments of the present invention will be described using the accompanying drawings. The structural components in each drawing are shown schematically, and their shapes or scales may not be identical to those in the drawings. The various modifications described below can be implemented in any combination.

[0041] The adsorption device 1 in this embodiment is specifically an electrostatic chuck, which is configured to adsorb and hold the workpiece W by means of electro-attraction such as Coulomb force, Johnsen-Rahbek force, and gradient force. However, the adsorption device 1 is not limited to an electrostatic chuck, and may also be a vacuum chuck, for example.

[0042] The adsorption device 1 of this embodiment is particularly suitable for use in vacuum environments, such as in the vacuum chamber of a semiconductor manufacturing apparatus, and can be suitably used as a substrate clamping device. A semiconductor manufacturing apparatus is, for example, a vapor deposition apparatus. However, the application of the adsorption device 1 is not limited to this.

[0043] like Figure 1 As shown, the adsorption device 1 of this embodiment includes a substrate 2, an adsorption unit 3, a temperature control piping 4, and a heat diffusion layer 5.

[0044] The substrate 2 is a plate-shaped base material provided with adsorption units 3. The substrate 2 includes an adsorption surface 21 provided with adsorption units 3, and a non-adsorption surface 23 on the opposite side of the adsorption surface 21. Specifically, the substrate 2 in this embodiment is an integrally formed calcined ceramic body, which has electrical insulation as a whole, but it can also be made of composite material. The substrate 2 can be made of alumina, for example.

[0045] When the adsorption device 1 is an electrostatic chuck, the adsorption unit 3 includes an adsorption electrode 31 and a dielectric layer 33. The adsorption unit 3 has any chuck configured to adsorb the workpiece W.

[0046] The adsorption electrode 31 is an electrode formed on the adsorption surface 21 of the substrate 2 and is made of a conductive material. The adsorption electrode 31 can be a unipolar type having only one of a positive electrode 311 and a negative electrode 313, or a bipolar type having both a positive electrode 311 and a negative electrode 313. The adsorption electrode 31 in this embodiment is a bipolar type, such as... Figure 2 As shown, the electrode has a so-called comb-like shape with positive electrode 311 and negative electrode 313 alternately arranged at predetermined intervals. When adsorbing workpiece W, a predetermined voltage is applied to the positive electrode 311 and negative electrode 313 respectively. The adsorption electrode 31 can be made of, for example, aluminum, copper, silver, nickel, tungsten, and alloys with these as the main components.

[0047] The dielectric layer 33 is a layer made of dielectric material formed by covering the adsorption electrode 31. The dielectric layer 33 is configured to adsorb the workpiece W, which is directly in contact with and held by the dielectric layer 33. When a predetermined voltage is applied to the adsorption electrode 31, electro-attraction forces such as Coulomb force, Johnson-Labec force, and gradient force are generated within the dielectric layer 33, thereby adsorbing the workpiece W. The material of the dielectric layer 33 is selected from any dielectric material to correspond to the desired resistivity. For example, the dielectric layer 33 can be made of zircon, alumina, zirconia, titanium oxide, aluminum nitride, silicon dioxide, and mixtures thereof.

[0048] As mentioned above, the adsorption device 1 can also be a vacuum suction cup, in which case the adsorption unit 3 includes a plurality of fine holes formed on the adsorption surface 21, and these fine holes are connected to a vacuum pump.

[0049] The temperature control piping 4 is a temperature adjustment means configured to allow the flow of a temperature-controlled medium, and it adjusts the temperature of the adsorption device 1 and the workpiece W. The temperature control piping 4 is disposed on the non-adsorption surface 23 of the substrate 2. Preferably, at least a portion of the temperature control piping 4 is embedded in a groove 25 formed on the non-adsorption surface 23.

[0050] Temperature control piping 4 is connected to a temperature controller (not shown) having at least one heater and cooler, which heats or cools the temperature control medium. The temperature control medium can be any fluid such as water or oil. A temperature sensor may also be provided to measure the temperature at a predetermined location of the adsorption device 1 or the workpiece W. The temperature controller can perform feedback control based on the temperature measured by the temperature sensor. The temperature adjustment range in the adsorption device 1 of this embodiment, i.e., the temperature adjustment range of the temperature control medium, is, for example, above approximately 0°C and below approximately 100°C.

[0051] The shape of the temperature control piping 4 is not particularly limited, but it is preferably configured to allow for approximately uniform temperature adjustment of the entire substrate 2. Here, in the parallel piping constituting the temperature control piping 4, the distance between the centerlines of adjacent piping is defined as the spacing p. For example... Figure 3 As shown, in this embodiment, at least a portion of the temperature control piping 4 is arranged in parallel with a predetermined spacing p. In the adsorption device 1 of the present invention, since the heat diffusion layer 5 improves the temperature dispersion, temperature unevenness is less likely to occur even if the spacing p is increased. By increasing the spacing p, sensors or screw holes can be arranged between portions of the temperature control piping 4, increasing the design freedom. Furthermore, it is also possible to reduce the manufacturing costs required for processing the groove 25 that engages with the temperature control piping 4, as described later. In this embodiment, the spacing p can be, for example, about 80 mm or more.

[0052] The adsorption device 1 of this embodiment includes a temperature control piping 4 as a temperature adjustment means, but other temperature adjustment means may also be provided. For example, a heater electrode, a sheathed heater, a plate heater, etc., may be provided as a heater. For example, a Peltier element, etc., may be provided as a cooler. The temperature control piping 4 of this embodiment is configured to perform both heating and cooling, but it may also be configured to perform only one of them.

[0053] The heat diffusion layer 5 is a layer made of a highly thermally conductive material and is used to cover the temperature control piping 4. The heat diffusion layer 5 uniformizes the temperature distribution and suppresses the generation of temperature unevenness. In addition, in this embodiment, the heat diffusion layer 5 also serves to fix the temperature control piping 4 to the substrate 2. The thermal conductivity of the heat diffusion layer 5 is about 60 W / m·K or more, and is particularly preferably about 90 W / m·K or more.

[0054] The material for the heat diffusion layer 5 can be any material with good thermal conductivity, such as those selected from the group consisting of aluminum (approximately 236 W / m·K), copper (approximately 403 W / m·K), nickel (approximately 94 W / m·K), silver (approximately 428 W / m·K), gold (approximately 319 W / m·K), alloys thereof as the main components, or combinations thereof. In particular, aluminum (including aluminum alloys) is excellent and suitable as a material for the heat diffusion layer 5 in terms of thermal conductivity, processability, and availability.

[0055] The heat diffusion layer 5 is configured to have a relatively low density. While the thermal expansion coefficients of the substrate 2, temperature control piping 4, and heat diffusion layer 5 may differ, by setting the heat diffusion layer to a low density, it can absorb displacement or strain associated with temperature adjustments, preventing cracks or peeling and improving durability. Furthermore, it can expand the temperature range that can be adjusted. Because the density of the melt spray is relatively low, it can be appropriately used as the heat diffusion layer 5. The apparent density of the heat diffusion layer 5 is approximately 10 g / cm³. 3 The following is particularly preferred: about 3 g / cm³ 3 The apparent density of the heat diffusion layer 5 can be, for example, about 2 g / cm³. 3 above.

[0056] As mentioned earlier, since the heat diffusion layer 5 is a molten material, it also serves to fix the temperature control piping 4 to the substrate 2. In this embodiment, the temperature control piping 4 is directly fixed to the non-adsorption surface 23 of the substrate 2 via the heat diffusion layer 5. In other words, the temperature control piping 4 is fixed to the substrate 2 solely by the heat diffusion layer 5 without using an adhesive. Because the adsorption device 1 of this embodiment does not generate outgassing due to the adhesive, it is suitable for use in semiconductor devices requiring cleanliness in vacuum environments. Furthermore, it does not generate temperature unevenness caused by uneven adhesive coating.

[0057] The following is for reference Figures 4 to 8 The manufacturing method of the adsorption device 1 according to this embodiment is described below. The manufacturing method of the adsorption device 1 according to this embodiment includes a substrate preparation step, a trench formation step, a configuration step, and a heat diffusion layer formation step.

[0058] First, perform the substrate preparation process (S1) for substrate 2. For example... Figure 5 As shown, in this embodiment, a substrate 2 is prepared having an adsorption electrode 31 constituting the adsorption unit 3 and a dielectric layer 33 formed thereon. However, the timing of forming the adsorption electrode 31 and the dielectric layer 33 is not limited to this. For example, the adsorption electrode 31 and the dielectric layer 33 can also be formed after the thermal diffusion layer formation process. The adsorption electrode 31 and the dielectric layer 33 can be formed by any method. For example, a trench can be formed on the adsorption surface 21 of the substrate 2, a conductor can be melt-cast into the trench to form the adsorption electrode 31, and a dielectric can be melt-cast to cover the adsorption electrode 31 to form the dielectric layer 33.

[0059] Next, a trench forming process (S2) is performed to form trenches in the substrate 2. For example... Figure 6 As shown, a groove 25 is formed on the non-absorbent surface 23 of the substrate 2, which engages with at least a portion of the temperature control piping 4. A cutting device may be used, for example, to form the groove 25.

[0060] Next, a configuration step (S3) is performed to place the temperature control piping 4 on the non-absorbent surface 23 of the substrate 2. More specifically, as... Figure 7 As shown, at least a portion of the temperature control piping 4 is embedded in a groove 25 formed on the non-absorption surface 23. By embedding the temperature control piping 4 into the groove 25, the temperature control piping 4 can be easily positioned and positional displacement can be prevented. Furthermore, by burying at least a portion of the temperature control piping 4 in the substrate 2, the difference in height between it and the heat diffusion layer 5 is relatively smaller, and the adhesion is further improved.

[0061] Next, a heat diffusion layer forming process (S4) is performed to form the heat diffusion layer 5. More specifically, the heat diffusion layer 5 is formed on the entire non-adsorption surface 23 by spraying a high thermal conductivity material to cover the temperature control piping 4. As a result, the thermal diffusivity is improved, and the temperature control piping 4 is fixed to the substrate 2. Furthermore, by spraying the heat diffusion layer 5, the adhesion between the substrate 2 and the heat diffusion layer 5 is high, and even higher thermal diffusivity can be obtained. The thickness of the heat diffusion layer 5 only needs to be sufficient to obtain the necessary thermal diffusivity and to firmly fix the temperature control piping 4. Therefore, according to the structure of the present invention, the overall plate thickness of the device can be made relatively thin.

[0062] Thus, it was manufactured Figure 8The adsorption device 1 shown is characterized by the presence of a heat diffusion layer 5, which improves temperature dispersion and suppresses temperature unevenness. Furthermore, since the heat diffusion layer 5 is constructed as a low-density layer such as a melt jet, it exhibits high durability against temperature variations. Moreover, the manufacturing method according to this embodiment is relatively easy to implement, and the adsorption device 1 can be configured to be compact.

[0063] The present invention is not limited to the structure of the embodiments described above. Various modifications or applications can be made without departing from the technical concept of the present invention.

Claims

1. An adsorption device, comprising: An adsorption unit, having a suction cup, is configured to adsorb a workpiece; The matrix comprises: an adsorption surface and a non-adsorption surface, wherein the adsorption surface is provided with the adsorption unit, and the non-adsorption surface is the surface opposite to the adsorption surface; Temperature-controlled piping, disposed on the non-absorbent surface, is configured to allow the flow of the temperature-controlled medium; and A heat diffusion layer is applied to the temperature-controlled piping, wherein the heat diffusion layer has a thermal conductivity of 60 W / m·K or higher and an apparent density of 10 g / cm³. 3 the following.

2. The adsorption device according to claim 1, wherein: The adsorption unit includes: An adsorption electrode is formed of a conductive material formed on the adsorption surface; and The dielectric layer is composed of a dielectric material covering the adsorbed electrode.

3. The adsorption device according to claim 1, wherein, The adsorption unit includes a plurality of fine pores formed on the adsorption surface and connected to a vacuum pump.

4. The adsorption device according to claim 1, wherein, The substrate is made of ceramic.

5. The adsorption device according to claim 1, wherein, The temperature control piping is embedded in a groove formed on the non-absorption surface.

6. The adsorption device according to claim 1, wherein, The temperature control piping is directly fixed to the non-absorption surface through the heat diffusion layer.

7. The adsorption device according to claim 1, wherein: At least a portion of the temperature control piping is arranged in parallel at predetermined spacing. The spacing of the configuration is 80 mm or more.

8. The adsorption device according to claim 1, wherein, The temperature control medium is configured to adjust the temperature to above 0°C and below 100°C.

9. The adsorption device according to claim 1, wherein, The heat diffusion layer is a melt jet.

10. The adsorption device according to claim 1, wherein, The heat diffusion layer is selected from the group consisting of aluminum, copper, nickel, silver, gold, alloys with them as the main components, or combinations thereof.

11. The adsorption device according to claim 1, wherein, The thermal conductivity of the heat diffusion layer is above 90 W / m·K.

12. The adsorption device according to claim 1, wherein, The apparent density of the heat diffusion layer is 3 g / cm³. 3 the following.

13. A method for manufacturing an adsorption device, comprising: The substrate preparation process involves preparing a substrate, wherein the substrate includes an adsorption surface and a non-adsorption surface. The adsorption surface is provided with an adsorption unit, which has a suction cup configured to adsorb a workpiece. The non-adsorption surface is the surface opposite to the adsorption surface. In the configuration process, a temperature-controlled piping, configured to allow the flow of a temperature-controlled medium, is placed on the non-absorbent surface; and The process of forming a heat diffusion layer involves forming a heat diffusion layer that covers the temperature control piping. The heat diffusion layer has a thermal conductivity of 60 W / m·K or higher and an apparent density of 10 g / cm³. 3 the following.

14. The method for manufacturing the adsorption device according to claim 13, further comprising: The trench forming process involves forming a trench on the non-absorbent surface that engages with the temperature control piping. In the configuration process, the temperature control piping is embedded in a groove formed on the non-absorption surface.

15. The method for manufacturing the adsorption device according to claim 13, wherein, The heat diffusion layer forming process is the process of spraying a melt-casting material to cover the temperature control piping.

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