Heat dissipation material for semiconductor

Abstract

The present disclosure provides a heat dissipation material for a semiconductor. The semiconductor includes a housing, a die, at least one lead, and a base, and the die is disposed on the base, and the heat dissipation material includes a high-resistance polymer material and a high-resistance thermal conductive substance. The high-resistance polymer material has a first thermal conductivity and a first resistance value. The high-resistance thermal conductive substance is mixed with the high-resistance polymer material, wherein the heat dissipation material has a second thermal conductivity and a second resistance value, and is disposed between the housing and the base, and the second thermal conductivity is more than twice the first thermal conductivity.

Description

Technical Field

[0001] This disclosure relates to a heat dissipation material for semiconductors, and more particularly to an improved heat dissipation material for semiconductors. Background Technology

[0002] In traditional semiconductor manufacturing processes, to increase the heat dissipation efficiency of the chip, the semiconductor substrate is usually soldered to a heat sink with better heat dissipation. Before the semiconductor is packaged, a layer of non-conductive material is coated on the chip to prevent short circuits between chips, between chips and wires, or between wires.

[0003] However, the non-conductive or insulating materials typically have poor thermal conductivity, and therefore require further improvement to enhance their heat dissipation or thermal conductivity. Summary of the Invention

[0004] In view of this, this disclosure proposes a thermally conductive / heat-dissipating material for semiconductors, comprising a polymer and a high-resistance thermally conductive material. The polymer is in a fluid state before being coated onto the semiconductor die or chip. An improved method involves pre-mixing the polymer and the high-resistance thermally conductive material uniformly before coating. When coating the mixture onto the die, the thermal conductivity of the high-resistance thermally conductive material is greater than that of the polymer. The fluid polymer can uniformly distribute the high-resistance thermally conductive material within the semiconductor. The mixture can then be cured within the semiconductor through a curing process, followed by a semiconductor encapsulation process. The polymer can be at least one of silicone gel, polyurethane (PU), epoxy resin, polytetrafluoroethylene (PTFE, commonly known as Teflon), silicone resin, and polyester resin. The high-resistance thermally conductive material can be selected from abrasives used in grinding mills, such as diamond powder, silicon carbide powder, etc. Since the thermal conductivity of the high-resistance thermally conductive material is greater than that of the polymer, the thermal conductivity of the heat dissipation material after mixing the two can be increased to an equivalent level to that of the high-resistance thermally conductive material. For example, the thermal conductivity of diamond powder is approximately 2000 W / m*K, while the thermal conductivity of silicone is 6.5 W / m*K, which is a bottleneck in heat dissipation performance. The thermal conductivity of the mixed heat dissipation material can reach approximately 1500~2000 W / m*K, which is hundreds of times higher than the original silicone's thermal conductivity of 6.5 W / m*K, thus significantly improving the heat conduction / dissipation effect. Soldering the bare die to the heat sink base further enhances the heat dissipation effect at the bottom. The heat sink base can contain materials with high thermal conductivity, such as a copper base. Copper has a thermal conductivity of approximately 400 W / m*K, so the thermal conductivity of the heat dissipation material is several times that of copper, resulting in better heat dissipation. Although the thermal conductivity of the mixed heat dissipation material is only slightly higher than that of the original silicone, it will be more effective in dissipating heat if it is greater than that of the heat dissipation base.

[0005] In one embodiment, since diamond powder or silicon carbide powder can be an abrasive, the heat dissipation material is inexpensive and highly effective, offering maximum cost-effectiveness.

[0006] In one embodiment, the heat dissipation material disclosed herein may comprise a polymer and a high-resistance thermally conductive material. The high-resistance thermally conductive material may be the same substance with different particle sizes, for example, 0.01µm to 2mm. Different particle sizes can be mixed in a specific proportion within the same substance to form an insulating, high-thermal-conductivity solute. Larger particles are less expensive and can be configured in a larger proportion, thus occupying more space in the semiconductor; smaller particles are more expensive and can be configured in a smaller proportion, allowing the smaller particles to occupy hard-to-reach gaps, such as the gaps in the side solder between the bare die and the heat dissipation base. This achieves a balance between heat dissipation efficiency and cost optimization. Alternatively, if the semiconductor structure has many gaps, a more conservative and reliable approach can be taken, increasing the proportion of smaller particles and decreasing the proportion of larger particles. When the high-resistance thermally conductive material is the same substance, the polymer and the high-resistance thermally conductive material can be mixed in a specific proportion to form a heat dissipation material mixture. A higher proportion of polymer results in a thinner heat dissipation material mixture with better fluidity, allowing for the addition of less high-resistance thermally conductive material to save costs.

[0007] In one embodiment, the heat dissipation material disclosed herein may comprise a polymer and a high-resistance thermally conductive material. The high-resistance thermally conductive material may be different substances with the same or different particle sizes, for example, particle sizes of 0.01µm to 2mm, such as diamond powder and silicon carbide powder. The two can be mixed in different proportions. The diamond powder and silicon carbide powder may be different, and the powder particles in the same substance may also be different. Various proportions can be used to mix various substances and combinations of various particle sizes.

[0008] In one embodiment, this disclosure provides a heat dissipation material for a semiconductor, wherein the semiconductor includes a housing, a bare die, at least one wire, and a heat dissipation base having at least one pin, and the bare die is soldered to the heat dissipation base and is correspondingly electrically connected to the at least one pin via the at least one wire, and the heat dissipation material includes a silicone gel and a diamond powder.

[0009] The silicone has a first thermal conductivity and a first impedance value. The diamond powder particles are mixed with the silicone to form the heat dissipation material, wherein the heat dissipation material has a second thermal conductivity, a second impedance value, and multiple particle size parameters, and is disposed between the housing and the heat dissipation base, filling the space between them to cover the bare die, the at least one conductive wire, and an inner surface of the heat dissipation base. The heat dissipation base has a third thermal conductivity, the second thermal conductivity being several times that of the third thermal conductivity, the third thermal conductivity being tens of times that of the first thermal conductivity, the second impedance value being greater than or equal to the first impedance value, and the multiple particle size parameters being 0.01µm to 2mm.

[0010] In one embodiment, this disclosure provides a heat dissipation material for a semiconductor, wherein the semiconductor includes a housing having multiple connection pads, multiple bare dies, multiple wires, a ceramic active metal layer, a base layer, and a heat dissipation base. The multiple bare dies are soldered to the ceramic active metal layer via a first thermally conductive plate, the ceramic active metal layer is soldered to the base layer via a second thermally conductive plate, the base layer is disposed on the heat dissipation base via a thermal interface layer, the multiple bare dies are electrically connected to each other via the multiple wires, and the multiple bare dies are coupled to the multiple connection pads via the first thermally conductive plate. The heat dissipation material includes a silicone gel and diamond powder. The silicone gel has a first thermal conductivity and a first impedance value. The diamond powder particles are mixed with the silicone to form the heat dissipation material, wherein the heat dissipation material has a second thermal conductivity, a second impedance value, and multiple particle size parameters, and is disposed between the shell and the base plate layer, filling the space between them to cover the multiple bare crystals, the multiple wires, the first heat-conducting plate, the ceramic active metal layer, the second heat-conducting plate, and an inner surface of the base plate layer. The heat dissipation base has a third thermal conductivity, the second thermal conductivity being several times that of the third thermal conductivity, the third thermal conductivity being tens of times that of the first thermal conductivity, the second impedance value being greater than or equal to the first impedance value, and the multiple particle size parameters being 0.01um to 2mm.

[0011] In one embodiment, this disclosure provides a heat dissipation material for a semiconductor, wherein the semiconductor includes a housing, a bare die, at least one conductive wire, and a base, and the bare die is disposed on the base. The heat dissipation material includes a high-resistivity polymer material and a high-resistivity thermally conductive material. The high-resistivity polymer material has a first thermal conductivity and a first impedance value. The high-resistivity thermally conductive material is mixed with the high-resistivity polymer material, wherein the heat dissipation material has a second thermal conductivity and a second impedance value, and is disposed between the housing and the base, wherein the second thermal conductivity is more than twice the first thermal conductivity.

[0012] In one embodiment, this disclosure provides a heat dissipation material for a semiconductor, wherein the semiconductor includes a housing, a bare die, at least one wire, and a base, and the bare die is disposed on the base, wherein the base has a first thermal conductivity, the heat dissipation material includes a high-resistivity polymer material and a high-resistivity thermally conductive material, the high-resistivity thermally conductive material being mixed with the high-resistivity polymer material, wherein the heat dissipation material has a second thermal conductivity and is disposed between the housing and the base, and the second thermal conductivity is greater than the first thermal conductivity.

[0013] The figures and text in the implementation methods can be further explained to understand the technical solutions disclosed herein. Attached Figure Description

[0014] Figure 1 This is a schematic diagram of a heat dissipation material for a semiconductor according to a preferred embodiment of the present invention.

[0015] Figure 2 This is a schematic diagram illustrating how the heat dissipation material of the preferred embodiment is implemented in the process of packaging a bare die.

[0016] Figure 3 This is a schematic diagram of a preferred embodiment of the present invention, in which a semi-finished product coated with heat dissipation material is packaged into a separate semiconductor by upper and lower housings.

[0017] Figure 4 This is a schematic diagram of a heat dissipation material for a semiconductor according to another preferred embodiment.

[0018] Figure 5 This is a schematic diagram of a heat dissipation material for a semiconductor according to another preferred embodiment.

[0019] Figure 6 This is a schematic diagram of a heat dissipation material for a semiconductor according to another preferred embodiment. Detailed Implementation

[0020] Please refer to the accompanying drawings of this disclosure for the following detailed description, which are illustrated by way of example to show various different embodiments of this disclosure and to provide an understanding of how to implement this disclosure. The embodiments disclosed herein provide sufficient content for those skilled in the art to implement the embodiments disclosed herein, or to implement embodiments derived from the content disclosed herein. It should be noted that these embodiments are not mutually exclusive, and some embodiments can be appropriately combined with one or more other embodiments to form new embodiments; that is, the implementation of this disclosure is not limited to the embodiments disclosed below. Furthermore, for the sake of brevity and clarity, excessive details are not disclosed in the embodiments; even when specific details are disclosed, they are only illustrative to make the reader clear, and the relevant specific details in the embodiments are not intended to limit the disclosure of this case.

[0021] Please see Figure 1 This is a schematic diagram of a heat dissipation material 10 for a semiconductor 1 according to a preferred embodiment of the present disclosure. Please refer to... Figure 2 This is a schematic diagram illustrating how the heat dissipation material 10 is implemented in the process of packaging the bare die 12 according to a preferred embodiment of this disclosure. Please refer to... Figure 3 This is a schematic diagram illustrating how, in a preferred embodiment of this disclosure, the semi-finished product 19 after being coated with heat-dissipating material is encapsulated into a separate semiconductor 1 within the upper and lower housings 11. Please refer to both diagrams. Figures 1-3 The semiconductor 1 includes a housing 11, a bare die 12, at least one wire 13, and a heat sink 14 having at least one pin 15. The bare die 12 is soldered to the heat sink 14 and is electrically connected to the at least one pin 15 via the at least one wire 13. The heat dissipation material 10 includes a silicone gel 16 and diamond powder 17. The silicone gel 16 has a first thermal conductivity and a first resistance value, as shown in Table 1 for the thermal conductivity and resistance characteristics of the silicone gel 16. The diamond powder 17 is mixed with the silicone 16 to form the heat dissipation material 10. The heat dissipation material 10 has a second thermal conductivity, a second impedance value (as shown in Table 2 for the thermal conductivity and resistance characteristics of the diamond powder 17), and multiple particle size parameters. It is disposed between the housing 11 and the heat dissipation base 14 and fills the space between them to cover the bare crystal 12, the at least one wire 13, and an inner surface 140 of the heat dissipation base 14. The heat dissipation base 14 has a third thermal conductivity. The second thermal conductivity is several times that of the third thermal conductivity, and the third thermal conductivity is tens of times that of the first thermal conductivity. The second impedance value is greater than or equal to the first impedance value, and the multiple particle size parameters are 0.01um to 2mm.

[0022] Typical properties

[0023] Table 1

[0024] Table 2 In any embodiment disclosed herein, the bare die 12 can be the bare die of any semiconductor power component, and the semiconductor 1 can be a single chip, such as a single bare die 12 packaged in a single housing 11. The housing 11 can be an epoxy resin shell. The heat sink 14 can be a copper base. The first impedance value is 7*10E13 Ω·cm, and the second impedance value is 10E13-10E16 Ω·cm. The first thermal conductivity is 6.5 W / m*K, the second thermal conductivity is 1500~2000 W / m*K, and the third thermal conductivity is 400 W / m*K. The diamond powder 17 is derived from an abrasive, and the diamond powder 17 can be replaced by silicon carbide microparticles with a high impedance value and a high thermal conductivity, or the diamond powder 17 and the silicon carbide microparticles are mixed in a specific ratio to form a solute of the heat dissipation material. The diamond powder 17 comprises diamond powder particles of the same or different sizes.

[0025] In any embodiment disclosed herein, the silicone 16 has high fluidity and high impedance, and serves as a binder for the heat dissipation material 10. The diamond powder 17 has the high impedance and high thermal conductivity, and the heat dissipation material 10 has the high fluidity, high impedance, and high thermal conductivity. The heat dissipation material 10 distributes the heat generated by the bare die 12 to the at least one conductive wire 13 and the heat dissipation base 14 through its high fluidity and high thermal conductivity, thereby increasing the heat dissipation area. The heat dissipation material 10 ensures insulation between the at least one conductive wire 13 and between the at least one conductive wire 13 and the bare die 12 through its high impedance.

[0026] exist Figure 2The diagram shows a schematic of a heat dissipation material 10 coated on a single bare die and then encapsulated by a housing 11. The manufacturing method includes: Step S101, providing a lead frame 110 having a working area 111 and at least one pin 15. Step S102, depositing a solder 18 in the working area 111. Step S103, attaching a bare die 12 to the solder 18. Step S104, correspondingly connecting at least one wire 13 to at least one pin 15. Step S105, coating the heat dissipation material 10, consisting of a premixed silicone 16 and diamond powder 17, onto the entire lead frame 110 to form a semi-finished product 19. Step S106, using injection molding to combine the housing 11 and the semi-finished product 19 into a semiconductor 1, such as a single power semiconductor. Figure 3 As shown.

[0027] Please see Figure 4This is a schematic diagram of a heat dissipation material 20 for a semiconductor according to another preferred embodiment of the present disclosure. A heat dissipation material 20 for a semiconductor 2, wherein the semiconductor 2 includes a housing 21 having a plurality of connection pads 25, a plurality of bare dies 22, a plurality of wires 23, a ceramic active metal layer AMB, a base plate layer BP, and a heat dissipation base 24. The plurality of bare dies are soldered to the ceramic active metal layer AMB via a first heat-conducting plate 291, the ceramic active metal layer AMB is soldered to the base plate layer BP via a second heat-conducting plate 292, the base plate layer BP is disposed on the heat dissipation base 24 via a thermal interface layer 293, the plurality of bare dies 22 are electrically connected to each other by the plurality of wires 23, and the plurality of bare dies 22 are coupled to the plurality of connection pads 25 via the first heat-conducting plate 291. The heat dissipation material 20 includes a silicone gel 26 and diamond powder 27. Silicone 26 has a first thermal conductivity and a first impedance value, as shown in Table 1 for the thermal conductivity and resistance characteristics of silicone 26. Diamond powder 27 is mixed with the silicone 26 to form the heat dissipation material 20, wherein the heat dissipation material 20 has a second thermal conductivity, a second impedance value (as shown in Table 2 for the thermal conductivity and resistance characteristics of diamond powder 17), and multiple particle size parameters, and is disposed between the housing 21 and the base disk BP, filling the space between them to cover the multiple bare crystals 22, the multiple conductive wires 23, the first heat-conducting plate 291, the ceramic active metal layer AMB, the second heat-conducting plate 292, and an inner surface BPI of the base disk BP. The heat dissipation base 24 has a third thermal conductivity, the second thermal conductivity being several times that of the third thermal conductivity, the third thermal conductivity being tens of times that of the first thermal conductivity, the second impedance value being greater than or equal to the first impedance value, and the multiple particle size parameters being 0.01um to 2mm.

[0028] In any embodiment disclosed herein, the bare die 22 is connected to the first heat-conducting plate 291 using solder 281, and the second heat-conducting plate 292 is connected to the base disk BP using solder 282. Both the first and second heat-conducting plates 291 and 292 are connected to the ceramic active metal layer AMB using forced soldering. The semiconductor 2 is a power chip module. The housing 21 is an epoxy resin shell. The first heat-conducting plate 291, the second heat-conducting plate 292, the base disk BP, and the heat sink 24 can be selected from the group consisting of a substrate with a copper track, a direct bonded copper (DBC) substrate, a direct plated copper (DPC) substrate, and an active metal brazing (AMB) substrate. The first impedance value is 7*10E13 Ω·cm, and the second impedance value is 10E13-10E16 Ω·cm. The first thermal conductivity is 6.5 W / m*K, the second thermal conductivity is 1500~2000 W / m*K, and the third thermal conductivity is 400 W / m*K. The diamond powder 27 is derived from an abrasive, and the diamond powder 27 can be replaced by silicon carbide microparticles with a high impedance and a high thermal conductivity, or the diamond powder 27 and the silicon carbide microparticles can be mixed in a specific ratio to form a solute in the heat dissipation material. The diamond powder 27 comprises diamond powder particles of the same or different sizes.

[0029] In any embodiment disclosed herein, the silicone 26 has high fluidity and high impedance, and serves as a binder for the heat dissipation material 20; the diamond powder 27 has the high impedance and high thermal conductivity; and the heat dissipation material 20 has the high fluidity, high impedance, and high thermal conductivity. The heat dissipation material 20 distributes the heat generated by the bare die to the at least one conductive wire 23 and the heat dissipation base 24 through its high fluidity and high thermal conductivity, thereby increasing the heat dissipation area. The heat dissipation material 20 ensures insulation between the at least one conductive wire 23 and between the at least one conductive wire 23 and the bare die 22 through its high impedance.

[0030] Please see Figure 5This diagram illustrates a heat dissipation material 30 for a semiconductor 3 according to another preferred embodiment of the present disclosure. The semiconductor 3 includes a housing 31, a bare die 32, at least one conductive wire 33, and a base 34, with the bare die 32 disposed on the base 34. The heat dissipation material 30 includes a high-resistivity polymer material 36 and a high-resistivity thermally conductive material 37. The high-resistivity polymer material 36 has a first thermal conductivity and a first impedance value. The high-resistivity thermally conductive material 37 is mixed with the high-resistivity polymer material 36. The heat dissipation material 30 has a second thermal conductivity and a second impedance value and is disposed between the housing 31 and the base 34, wherein the second thermal conductivity is more than twice the first thermal conductivity.

[0031] Figure 1 and Figure 4 The embodiments in the example can be compared with Figure 5The embodiments described herein can be combined in any way to form a new embodiment. For example, in any embodiment disclosed herein, the heat dissipation materials 10, 20, and 30 fill the space between the housings 11, 21, and 31 and the base 34 to cover the bare crystals 12, 22, and 32, the at least one conductive wire 13, 23, and 33, and the base 34. The base 34 has a third thermal conductivity, which is between the second thermal conductivity and the first thermal conductivity. The second thermal conductivity is 1 to 6 times the third thermal conductivity, the third thermal conductivity is tens of times the first thermal conductivity, and the second impedance value is greater than or equal to the first impedance value. The base 34 is a heat dissipation base 14 or 24 having at least one pin 15. The bare crystals 12, 22, and 32 are correspondingly electrically connected to the at least one pin 15 via the at least one conductive wire 13, 23, and 33. The high-resistance polymer material 36 is a silicone gel 16 or 26. The high-resistance thermally conductive material 37 is at least one of diamond powder 17 or 27 and silicon carbide powder. The heat dissipation material 30 also has multiple particle size parameters, wherein the multiple particle size parameters are 0.01um to 2mm. The base 34 can be selected from the group consisting of a substrate with a copper track, a direct bonded copper (DBC) substrate, a direct plated copper (DPC) substrate, and an active metalbrazing (AMB) substrate. The semiconductor 3 is a single chip or a power chip module. The housings 11, 21, and 31 are epoxy resin shells. The first impedance value is 7*10E13 Ω·cm, and the second impedance value is 10E13-10E16 Ω·cm. The first thermal conductivity is 6.5 W / m*K, the second thermal conductivity is 1500~2000 W / m*K, and the third thermal conductivity is 400 W / m*K. The diamond powder particles 17, 27 or the silicon carbide powder particles are derived from an abrasive. The diamond powder particles 17, 27 and the silicon carbide microparticles are mixed in a specific ratio to form a solute of the heat dissipation materials 10, 20, 30. The diamond powder particles 17, 27 contain diamond powder particles of the same or different sizes. The silicon carbide powder particles contain silicon carbide powder particles of the same or different sizes.

[0032] In any embodiment disclosed herein, the silicone 16, 26 has high fluidity and high impedance, and serves as a binder for the heat dissipation materials 10, 20, 30. The diamond powder 17, 27 and the silicon carbide powder have the high impedance and high thermal conductivity. The heat dissipation materials 10, 20, 30 also possess the high fluidity, high impedance, and high thermal conductivity. The heat dissipation materials 10, 20, 30, through their high fluidity and high thermal conductivity, distribute the heat generated by the bare crystals 12, 22, 32 to the at least one conductive wire 13, 23, 33 and the heat dissipation base 14, 24, thereby increasing the heat dissipation area. The heat dissipation materials 10, 20, 30, through their high impedance, ensure insulation between the at least one conductive wire 13, 23, 33 and between the at least one conductive wire 12, 22, 32 and the bare crystals 12, 22, 32.

[0033] Please see Figure 6 This diagram illustrates a heat dissipation material 40 for a semiconductor 4 according to another preferred embodiment of the present invention. The semiconductor 4 includes a housing 41, a bare die 42, at least one conductive wire 43, and a base 44. The bare die 42 is disposed on the base 44. The base 44 has a first thermal conductivity. The heat dissipation material 40 includes a high-resistivity polymer material 46 and a high-resistivity thermally conductive material 47. The high-resistivity thermally conductive material 47 is mixed with the high-resistivity polymer material 46. The heat dissipation material 40 has a second thermal conductivity and is disposed between the housing 41 and the base 44, and the second thermal conductivity is greater than the first thermal conductivity.

[0034] The numerous variations and other embodiments of this disclosure presented herein will be beneficial to those skilled in the art in understanding the teachings presented in the foregoing description and related drawings. Therefore, it should be understood that this disclosure is not limited to the specific embodiments disclosed, and that variations and other embodiments are intended to be included within the scope of the appended claims.

[0035] Symbol Explanation 10, 20, 30, 40: Heat dissipation material 1, 2, 3, 4: Semiconductors 11, 21, 31, 41: Shell 12, 22, 32, 42: Bare crystal 13, 23, 33, 43: At least one wire 14, 24: Heatsink base 34, 44: Base 15: At least one foot 16, 26: Silicone 36, 46: High-resistivity polymer materials 17, 27: Diamond powder 37, 47: High-resistivity thermally conductive materials 140: Inner surface of the heat sink base 110: Lead Frame 111: Work Area 18: Solder 19: Semi-finished products 25: Multiple connecting pads 281, 282: Solder 291: First heat conduction plate 292: Second heat-conducting plate 293: Thermal interface layer AMB: Ceramic Active Metal Layer BP: Base Plate BPI: Inner surface of the base plate layer.

Claims

1. A heat dissipation material for a semiconductor, wherein the semiconductor comprises a housing, a bare die, at least one wire, and a heat dissipation base having at least one pin, and the bare die is soldered to the heat dissipation base and electrically connected to the at least one pin via the at least one wire, the heat dissipation material comprising: Silicone has a first thermal conductivity and a first impedance value; Diamond powder particles are mixed with the silicone to form the heat dissipation material, wherein the heat dissipation material has a second thermal conductivity, a second impedance value, and multiple particle size parameters, and is disposed between the housing and the heat dissipation base, filling the space between them to cover the bare die, the at least one conductive wire, and the inner surface of the heat dissipation base. The heat dissipation base has a third thermal conductivity, the second thermal conductivity is several times that of the third thermal conductivity, the third thermal conductivity is tens of times that of the first thermal conductivity, the second impedance value is greater than or equal to the first impedance value, and the multiple particle size parameters are 0.01um to 2mm.

2. The heat dissipation material according to claim 1, wherein: The semiconductor is a single chip; The housing is an epoxy resin shell; The heat dissipation base is a copper-based disk; The first impedance value is 7*10E13 Ω·cm, while the second impedance value is 10E13-10E16 Ω·cm; The first thermal conductivity is 6.5 W / m*K, the second thermal conductivity is 1500~2000 W / m*K, and the third thermal conductivity is 400 W / m*K; The diamond powder is derived from an abrasive, and can be replaced by silicon carbide microparticles with high impedance and high thermal conductivity, or the diamond powder and silicon carbide microparticles can be mixed in a specific ratio to form the solute of the heat dissipation material; and The diamond powder particles may contain diamond powder particles of the same or different sizes.

3. The heat dissipation material according to claim 1, wherein: The silicone has high fluidity and high impedance, and serves as a binder for the heat dissipation material. The diamond powder has the high impedance and high thermal conductivity, and the heat dissipation material has the high fluidity, the high impedance, and the high thermal conductivity. The heat dissipation material distributes the heat generated by the bare crystal to the at least one wire and the heat dissipation base through its high fluidity and high thermal conductivity, thereby increasing the heat dissipation area. as well as The heat dissipation material ensures insulation between the at least one conductor and between it and the bare die through its high impedance.

4. A heat dissipation material for a semiconductor, wherein the semiconductor comprises a housing having a plurality of connection pads, a plurality of bare dies, a plurality of wires, a ceramic active metal layer, a base layer, and a heat dissipation base, the plurality of bare dies being soldered to the ceramic active metal layer via a first heat-conducting plate, the ceramic active metal layer being soldered to the base layer via a second heat-conducting plate, the base layer being disposed on the heat dissipation base via a thermal interface layer, the plurality of bare dies being electrically connected to each other via the plurality of wires, and the plurality of bare dies being coupled to the plurality of connection pads via the first heat-conducting plate, the heat dissipation material comprising: Silicone has a first thermal conductivity and a first impedance value; Diamond powder particles are mixed with the silicone to form the heat dissipation material, wherein the heat dissipation material has a second thermal conductivity, a second impedance value, and multiple particle size parameters, and is disposed between the shell and the base plate layer, filling the space between them to cover the multiple bare crystals, the multiple wires, the first heat-conducting plate, the ceramic active metal layer, the second heat-conducting plate, and the inner surface of the base plate layer. The heat dissipation base has a third thermal conductivity, the second thermal conductivity being several times that of the third thermal conductivity, the third thermal conductivity being tens of times that of the first thermal conductivity, the second impedance value being greater than or equal to the first impedance value, and the multiple particle size parameters being 0.01um to 2mm.

5. The heat dissipation material according to claim 4, wherein: The semiconductor is a power chip module; The housing is an epoxy resin shell; The first heat-conducting plate, the second heat-conducting plate, the base plate, and the heat dissipation base can be selected from the group consisting of a substrate with copper channels, a direct copper-clad substrate, a direct electroplated copper substrate, and an active metal solder substrate. The first impedance value is 7*10E13 Ω·cm, while the second impedance value is 10E13-10E16 Ω·cm; The first thermal conductivity is 6.5 W / m*K, the second thermal conductivity is 1500~2000 W / m*K, and the third thermal conductivity is 400 W / m*K; The diamond powder is derived from an abrasive, and may be replaced by silicon carbide microparticles with high impedance and high thermal conductivity, or the diamond powder and silicon carbide microparticles may be mixed in a specific ratio to form the composition of the heat dissipation material; and The diamond powder particles may contain diamond powder particles of the same or different sizes.

6. The heat dissipation material according to claim 5, wherein: The silicone has high fluidity and high impedance, and serves as a binder for the heat dissipation material. The diamond powder has the high impedance and high thermal conductivity, and the heat dissipation material has the high fluidity, the high impedance, and the high thermal conductivity. The heat dissipation material distributes the heat generated by the bare crystal to the multiple wires and the heat dissipation base through its high fluidity and high thermal conductivity, thereby increasing the heat dissipation area. as well as The heat dissipation material ensures insulation between the plurality of wires and between the wires and the bare die through its high impedance.

7. A heat dissipation material for a semiconductor, wherein the semiconductor comprises a housing, a bare die, at least one conductive wire, and a base, and the bare die is disposed on the base, the heat dissipation material comprising: A high-resistivity polymer material having a first thermal conductivity and a first impedance value; A high-resistance thermally conductive material is mixed with the high-resistance polymer material, wherein the heat dissipation material has a second thermal conductivity and a second impedance value, and is disposed between the housing and the base, wherein the second thermal conductivity is more than twice the first thermal conductivity.

8. The heat dissipation material according to claim 7, wherein: The heat dissipation material fills the space between the housing and the base to cover the bare die, the at least one wire, and the base, the base having a third thermal conductivity, the third thermal conductivity being between the second thermal conductivity and the first thermal conductivity; The second thermal conductivity is 1 to 6 times the third thermal conductivity, the third thermal conductivity is tens of times the first thermal conductivity, and the second impedance value is greater than or equal to the first impedance value. The base is a heat dissipation base with at least one foot; The bare die is electrically connected to the at least one pin via the at least one wire; The high-resistivity polymer material is silicone; The high-resistance thermally conductive material is at least one of diamond powder and silicon carbide powder; The heat dissipation material also has multiple particle size parameters, wherein the multiple particle size parameters are 0.01um~2mm; The base can be selected from the group consisting of a substrate with copper channels, a direct copper-clad substrate, a direct electroplated copper substrate, and an active metal solder substrate; The semiconductor is a single chip or a power chip module; The housing is an epoxy resin shell; The first impedance value is 7*10E13 Ω·cm, while the second impedance value is 10E13-10E16 Ω·cm; The first thermal conductivity is 6.5 W / m*K, the second thermal conductivity is 1500~2000 W / m*K, and the third thermal conductivity is 400 W / m*K; The diamond powder or the silicon carbide powder comes from an abrasive; The diamond powder and the silicon carbide microparticles are mixed in a specific ratio to form the solute of the heat dissipation material; The diamond powder particles comprise diamond powder particles of the same or different sizes; and The silicon carbide powder particles comprise silicon carbide powder particles of the same or different sizes.

9. The heat dissipation material according to claim 8, wherein: The silicone has high fluidity and high impedance, and serves as a binder for the heat dissipation material. The diamond powder and the silicon carbide powder have the high impedance and high thermal conductivity, and the heat dissipation material has the high fluidity, the high impedance, and the high thermal conductivity. The heat dissipation material distributes the heat generated by the bare crystal to the at least one wire and the heat dissipation base through its high fluidity and high thermal conductivity, thereby increasing the heat dissipation area. as well as The heat dissipation material ensures insulation between the at least one conductor and between it and the bare die through its high impedance.

10. A heat dissipation material for a semiconductor, wherein the semiconductor comprises a housing, a bare die, at least one conductive wire, and a base, and the bare die is disposed on the base, wherein the base has a first thermal conductivity, and the heat dissipation material comprises: High-resistivity polymer materials; and A high-resistance thermally conductive material is mixed with the high-resistance polymer material, wherein the heat dissipation material has a second thermal conductivity and is disposed between the housing and the base, and the second thermal conductivity is greater than the first thermal conductivity.

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