Semiconductor device with embedded passive components and method of manufacturing the same

Abstract

A semiconductor device having embedded passive components and methods of manufacturing the same are disclosed. A semiconductor package (100) is disclosed that includes a die (110) and a leadframe (106). The leadframe (106) can include a die pad (112) to which the die (110) can be coupled, and a set of leads (116-118) that include a surface (124). A passive component (102) can be coupled to the surface (124) of the set of leads (116-118), which can be electrically connected to at least the die (110).

Description

Technical Field

[0001] This disclosure relates to semiconductor packaging. More specifically, this disclosure relates to semiconductor devices having embedded passive components and methods of manufacturing the same. Background Technology

[0002] A semiconductor device is an electronic component made of semiconductor material with controlled conductivity. The term "semiconductor device" can refer to various types of electronic devices, including individual components such as diodes, transistors, photonic devices, power devices, and integrated circuits (ICs). An IC integrates multiple electronic components and / or circuits into a single chip. A chip (also known as a microchip, silicon chip, or die) is a piece of semiconductor material (usually silicon) on which an IC is fabricated. ICs are built on a wafer, and once completed, the wafer is diced to provide individual dies. Dies can be mounted on a packaging substrate or lead frame and encapsulated in a molded part to form an IC package or semiconductor package (device). IC packages are designed to be mounted on a printed circuit board (PCB) and connected to other components in an electronic system. Summary of the Invention

[0003] A first example relates to a semiconductor package comprising a die and a lead frame. The lead frame may include die pads to which the die is coupled; and a set of leads including a surface. Passive components may be coupled to the surface of the set of leads, the surface being at least electrically connected to the die.

[0004] A second example relates to a method that may include providing one or more leadframe assemblies. Each leadframe assembly may include a die pad and a set of leads. Each of the set of leads may include an inner lead arm extending from a peripheral portion of the respective leadframe assembly toward the die pad. The method may further include attaching a passive component to the inner lead arm; attaching a die to the die pad of each leadframe assembly; forming an electrical connection between the die and the respective leadframe assembly; applying a molding material to encapsulate at least a portion of each leadframe assembly to provide one or more molded leadframe assemblies; and processing the one or more molded leadframe assemblies to form one or more semiconductor packages.

[0005] A third example relates to a method comprising: providing a leadframe strip that may include multiple leadframe assemblies. Each leadframe assembly may include a die pad and a set of leads. Each lead in the set of leads may include an inner lead arm extending from a peripheral portion of the leadframe assembly toward the die pad. The method may further comprise attaching a passive component to the inner lead arm of each leadframe assembly in the leadframe strip; attaching a die to the die pad of each leadframe assembly; forming an electrical connection between each die and a corresponding leadframe assembly; applying a molding material to encapsulate at least a portion of each leadframe assembly, thereby providing a molded leadframe strip; and processing the molded leadframe strip by separating the respective leadframe assemblies from the molded leadframe strip to form a plurality of semiconductor packages. Attached Figure Description

[0006] Figure 1A A diagram illustrating an example of a semiconductor device.

[0007] Figure 1B A diagram illustrating an example of a passive component coupled to an inner lead arm of a semiconductor device.

[0008] Figure 2A-2D An example of a lead frame assembly is shown.

[0009] Figure 3-10 The various stages of a method for forming a semiconductor device are shown.

[0010] Figure 11 A flowchart illustrating an example of a first method for manufacturing leadframe strips.

[0011] Figure 12 A flowchart illustrating an example of a second method for manufacturing leadframe strips.

[0012] Figure 13 A flowchart illustrating an example of a method for manufacturing multiple semiconductor packages. Detailed Implementation

[0013] This specification relates to a semiconductor device and a method of manufacturing the same, wherein the semiconductor device incorporates one or more passive components within a package itself. A square flat package (QFP) is a type of surface-mount integrated circuit package characterized by a flat, rectangular, or square body, wherein leads extend outward from the sides of the QFP. The leads can be thin gull-wing shaped, allowing the QFP to be soldered to a printed circuit board (PCB). The compact design and high lead count of QFPs make these semiconductor devices suitable for a variety of applications, such as microcontrollers, microprocessors, and application-specific integrated circuits (ASICs).

[0014] Existing QFPs do not allow the integration of passive components (e.g., capacitors) within the package structure. This is because QFPs use a leadframe-based design, where leads extend outward from the package body and are designed with specific widths for electrical isolation, mechanical stability, and manufacturability. These lead widths are set (or designed) to allow proper signal transmission while minimizing crosstalk and interference. Due to spacing and manufacturing constraints, reducing lead widths in QFPs to accommodate additional passive components within the package is not feasible. Narrower leads would introduce challenges in forming reliable interconnects, increasing the risk of electrical short circuits, parasitic coupling, and potentially reducing the package's mechanical integrity. Existing QFP designs rely on external passive components mounted on the PCB. This increases PCB complexity due to the need for additional routing space and can introduce signal integrity issues due to increased parasitic inductance and resistance. Furthermore, externally mounted passive components are positioned away from the die within the QFP, resulting in less effective power stabilization and noise filtering in some QFP applications. For example, voltage fluctuations can occur when high-frequency noise enters the package cell (QFP), leading to unstable electrical operation of the die.

[0015] Examples relating to semiconductor devices (or packages) and methods of manufacturing thereof are disclosed, wherein the semiconductor device includes one or more passive components integrated within the package. In some examples, a semiconductor package can be manufactured according to the examples herein, wherein one or more passive components (e.g., capacitors) are internally attached to the leadframe of the semiconductor package. Unlike existing leadframe designs (e.g., QFP designs), semiconductor devices with integrated passive components can be manufactured according to the examples herein. In some examples, semiconductor devices can be manufactured (or produced) using ChiCap technology (ChiCap technology with integrated capacitors), as described herein. For example, ChiCap technology can be used during the manufacturing of the semiconductor device to couple each passive component to the leadframe. Existing QFP designs rely on externally mounted passive components on a PCB. ChiCap technology uses a leadframe fabricated with inner lead arm pairs having dimensions that can accommodate the attachment of passive components during semiconductor package manufacturing.

[0016] For example, a passive component (a capacitor as an example) may be electrically coupled to a first terminal segment and a second terminal segment of one of a first inner lead arm and a second inner lead arm. The passive component is coupled to the first and second terminal segments on the bottom surface of these terminal segments on the back side of the lead frame. Each pair of inner lead arms has a structural configuration (e.g., width) that allows these inner lead portions of the lead frame to support the passive component. The passive component mounted to the first and second terminal segments of the lead frame may be referred to herein as an embedded passive component. By embedding the passive component along with the semiconductor package, the need for external passive components mounted on the PCB is eliminated, thereby reducing PCB space consumption and allowing for higher density semiconductor devices mounted on the PCB. Internally housing the passive component within the package structure allows for more compact and higher density package designs, thereby reducing reliance on externally mounted passive components. Furthermore, integrating the passive component into the package structure optimizes PCB layout by reducing the area required for external passive component placement, allowing for a larger number of semiconductor packages to be mounted on the PCB. Therefore, the packaging technology described in this paper improves manufacturing efficiency by simplifying board-level assembly and eliminating the need to attach external passive components.

[0017] In some instances, embedded passive components can be electrically coupled in series with corresponding passive component support leads of the leadframe (e.g., the first inner lead arm and the second inner lead arm), thereby enhancing the power stability of the semiconductor device by reducing voltage ripple and improving noise filtering. This configuration provides more effective high-frequency noise suppression compared to QFP designs that rely on externally mounted passive components. In some instances, the embedded passive component is a capacitor, which can be used as a decoupling capacitor to enhance the power integrity of the semiconductor device. By incorporating the decoupling capacitor into the package, voltage ripple is reduced and high-frequency noise at the die's power connections is suppressed. Additionally, by integrating the capacitor within the package, the transient response of the semiconductor device can be improved by stabilizing voltage levels during rapid changes in power demand, and impedance matching of high-speed signal lines is enhanced, thereby reducing signal reflections and improving signal integrity. Furthermore, by incorporating the capacitor into the package, the capacitor can be positioned closer to the die's power and ground connections, thereby reducing the distance between the capacitor and the die, which reduces parasitic inductance and allows for faster charge delivery. Embedding capacitors in a package can also reduce power drop by stabilizing voltage levels during transient current demands and reduce electromagnetic interference (EMI) by locally filtering high-frequency noise.

[0018] Figure 1AA diagram illustrating an example of a semiconductor device 100 is shown. In some examples, the semiconductor device 100 is a QFP package. The semiconductor device 100 includes a passive component 102 located on a bottom side 104 of a leadframe 106, opposite a top side 108 of the leadframe 106, on which a die 110 is located. The leadframe 106 includes die pads 112 supporting the die 110 and a plurality of lead structures configured to provide electrical connections between the die 110, the passive component 102, and / or external circuitry (e.g., a PCB). The leadframe 106 can be fabricated using etching or stamping processes to form the structural features according to the examples herein.

[0019] Each passive component 102 can be coupled to the first inner lead arm and the second inner lead arm 116-118 of the lead frame 106, such as Figure 1B As shown, Figure 1B This shows the first passive component in Figure 1A An example of a semiconductor device 100 being coupled at attachment site 120 to a first inner lead arm and a second inner lead arm 116-118. A second passive component in passive component 102 may be coupled to a corresponding inner lead arm in the same or similar manner as the first passive component. The first and second inner lead arms 116-118 of lead frame 106 are used to mount the first passive component while maintaining electrical isolation from adjacent leads. The first and second inner lead arms 116-118 allow for compact integration of the first passive component within the package, thereby reducing the need for external passive components and optimizing PCB layout. For example, the first inner lead arm 116 may extend inward toward the die pad 112, and the second inner lead arm 118 may extend inward toward the die pad 112 but may be spaced apart from the first inner lead arm, thereby defining a terminal isolation gap 144 between the first and second inner lead arms 116-118.

[0020] Each of the first passive component and the second passive component 102 (e.g., a capacitor) includes a first terminal 126 and a second terminal 128, for example... Figure 1B As shown. The first terminal 126 can be coupled to the bottom surface 124 of the first inner lead arm 116 via a solder joint 130, while the second terminal 128 can be coupled to the bottom surface 124 of the second inner lead arm 118 via another solder joint 130. The solder joint 130 is used to fasten each of the first passive component and the second passive component to the corresponding inner lead arm, such as the first inner lead arm and the second inner lead arm 116-118.

[0021] Semiconductor device 100 includes an outer lead portion 140 extending outwardly from lead frame 106. Figure 1AIn this example, the outer lead portion 140 is gull-wing shaped, but in other examples it may have different shapes. Each of the first inner lead arm and the second inner lead arm 116-118 is mechanically and electrically coupled to a corresponding outer lead portion of the outer lead portion 140. The outer lead portion 140 serves as an external electrical connection point for the semiconductor device 100. For clarity and simplicity, two outer lead portions 140 are shown; however, in other examples, any number of outer lead portions may be included in the semiconductor device 100, wherein the outer lead portion subgroups of the outer lead portion 140 are electrically and mechanically coupled to the inner lead arms. For example, the first and second outer lead portions of the outer lead portion subgroup are electrically and mechanically coupled to one of the first inner lead arm and the second inner lead arm 116-118. The outer lead portion 140 may also include the outer lead portion of the connecting lead of the lead frame 106, for clarity and simplicity. Figure 1A These external lead portions are omitted. The connecting leads are the lead structures of the lead frame 106 (e.g., as shown in the image). Figure 2A The lead frame 202 shown includes connection leads 205, which can be used to establish an electrical connection between the die 110 and an external circuit system (e.g., a PCB). The connection leads extend outward from the periphery or edge of the die 110 of the semiconductor device 100. Each connection lead includes an inner lead portion extending toward the die pad 112 and thus toward the edge of the die 110, and can be used as a bonding location for wire bonding to electrically connect die connectors of the die 110 to a corresponding inner lead portion of the connection lead leading to the lead frame 106. Therefore, the inner lead portions of the connection leads can be used to establish an electrical interface between the die 110 and an external circuit system (e.g., a PCB).

[0022] In some instances, wire bonding can be used to electrically connect the die 110 to the lead frame 106. For example, a first wire 113 can be used to connect a first die connector of the die 110 to the lead frame 106. A second wire 114 can be used to connect a second die connector of the die 110 to the lead frame 106. In some instances, a first end of the first wire 113 is bonded to the top surface 122 of a first inner lead arm 116, and a second end of the first wire 113 is bonded to the first die connector of the die 110, while a first end of the second wire 114 is bonded to the top surface 122 of a second inner lead arm 118, and a second end of the second wire 114 is bonded to the second die connector of the die 110. Thus, in some instances, wire bonding can be used to establish an electrical path between the die 110 and the passive component 102 (e.g., in some cases, for power distribution and noise filtering). In some instances, wire bonding elements can be used to establish an electrical connection between a corresponding die connector of die 110 and a corresponding inner lead portion of a connecting lead. For example, wires can be used to connect a given die connector of die 110 to a corresponding inner lead portion of a connecting lead in a connecting lead.

[0023] In some instances, a molding compound 146 is used to encapsulate the semiconductor device 100. The molding compound 146 may encapsulate the die 110, the first and second leads 112-114, and a portion of the lead frame 106, including first and second inner lead arms 116-118, and a passive component 102. The molding compound 146 serves to shield internal electrical connections from environmental factors, thereby preventing contamination or mechanical damage, while allowing the outer lead portions 140 to remain exposed and usable for external electrical connections (e.g., to a PCB).

[0024] Figure 2A An example of a lead frame assembly 202 is shown, which can be used to manufacture, for example... Figure 1A The semiconductor device 100 shown, and as shown Figure 1B The diagram shows a first inner lead arm and a second inner lead arm 116-118 fastened thereto with a first passive component. In some instances, the lead frame 106 of the semiconductor device 100 is a processed version of the lead frame assembly 202, which has undergone passive component attachment and subsequent manufacturing steps. Figure 2A A perspective view (e.g., top side view) of the lead frame assembly 202 is shown, while Figure 2B An enlarged view of the bottom portion 261 of the lead frame assembly 202 is shown, which is opposite to the top portion 260 of the lead frame assembly 202, as shown. Figure 2AAs shown. In some instances, leadframe assembly 202 may correspond to one of a plurality of leadframe assemblies of a leadframe strip, which can be used to manufacture a semiconductor device, such as semiconductor device 100, as... Figure 1A As shown. For example, leadframe strips may comprise multiple instances of leadframe assemblies 202, which may be arranged in a linear or matrix format, thereby allowing batch processing during semiconductor packaging manufacturing. Leadframe strips may be manufactured using etching or stamping techniques as described herein, and may undergo processing stages before being individually separated to form a single semiconductor package.

[0025] For example, the leadframe assembly 202 includes carrier pads 210 at corresponding corners of the leadframe assembly 202. The carrier pads 210 are used to support and stabilize the leadframe assembly 202 during semiconductor device manufacturing. Each carrier pad 210 includes a tool hole 212 for aligning and disposing of the leadframe assembly 202 during semiconductor device manufacturing. The leadframe assembly 202 includes tie rods 208 that hold die pads 226 (e.g., corresponding to...) Figure 1A The bare die pad 112) is coupled to one of the carrier pads 210, such as Figure 2A As shown. Die pad 226 contains pads for die (e.g., Figure 1A The mounting surface of the die 110 of the semiconductor device 100. The die pad 226 may be located in the plane of the leadframe assembly 202. The leadframe assembly 202 may extend in two orthogonal directions in this plane, the two orthogonal directions corresponding to the X and Y directions, while a third direction corresponding to the Z direction may be perpendicular to the plane of the leadframe assembly 202. The X direction may extend along a first transverse axis, the Y direction may extend along a second transverse axis orthogonal to the X direction, and the Z direction may extend along a vertical axis orthogonal to both the X and Y directions.

[0026] The lead frame assembly 202 includes a first set of leads 203 and a second set of leads 205. The first set of leads 203 may be referred to as passive component support leads 203 because these leads are configured to support and electrically interface with one or more passive components within the semiconductor package. The second set of leads 205 may be referred to as connection leads 205 because these leads provide electrical connections between the die and external circuitry, rather than serving as mounting points for passive components. The connection leads 205 may correspond to the connection leads of the semiconductor device 100, as described herein. Each of the passive component support leads and connection leads 203-205 can be separated by a baffle 204 that spans the gap between adjacent leads and also the gap between a lead and an adjacent carrier pad. The baffle 204 serves to prevent molding compound from flowing into the space between the leads during encapsulation. The baffle 204 can couple adjacent leads during manufacturing to provide lead alignment and structural integrity before the passive component support leads and connecting leads 203-205 are separated.

[0027] like Figure 2A As shown, the outer lead portion 230 of the connecting lead 205 extends outward in the corresponding direction of the lead frame assembly 202. In some examples, Figure 1A A set of external lead portions 140 of a semiconductor device 100 may include external lead portions 230. The external lead portions 230 serve as external electrical connections for the semiconductor device 100. Each connection lead 205 includes an inner lead portion 228 extending from a transition region 229 toward a die pad 226, in which a corresponding external lead portion 230 transitions into a corresponding inner lead portion 228. The inner lead portion 228 extends from a peripheral portion 224 of the lead frame assembly 202, such as... Figure 2A As shown. In some cases, the peripheral portion 224 may include a transition region 229. At each transition region 229 coupling the corresponding inner lead portions 228-230, each inner lead portion 228 may be angled relative to the direction in which the corresponding outer lead portion 230 may extend. The inner lead portion 228 can be used for wire bonding and thus provides an accessible bonding surface. The inner lead portion 228 can be separated from the die pad 226 via the die-to-lead separation region 232, as... Figure 2A As shown. In some instances, the die-to-lead separation region 232 may be referred to as a gap or void.

[0028] Each inner lead portion 228 of the connecting lead 205 may have a thickness extending relative to the plane of the lead frame assembly 202, a length extending toward the die pad 226, and a width extending in a direction relative to the length of the inner lead portion 228. The width of the inner lead portion 228 may be referred to as the bonding width because the wire is bonded to the surface of each inner lead portion 228 on the top side of the lead frame assembly 202. The outer lead portion 230 may also have a thickness, a length extending outward from the lead frame assembly 202, and a width extending in a transverse direction as the corresponding inner lead portion. In some instances, the inner lead portion 228 and the outer lead portion 230 may have substantially similar thicknesses and widths, while having different lengths, such as Figure 2A As shown. In some instances, the inner lead portion and the outer lead portion 228-230 have similar lengths.

[0029] In some instances, the passive component support lead 203 comprises passive component support lead pairs, wherein each pair consists of a first passive component support lead 290 and a second passive component support lead 291 (in... Figure 2A-2B It consists of (marked with dashed lines). As an example, in this article, regarding... Figure 2A-2B The description is presented in relation to a single corresponding passive element support lead pair comprising a first passive element support lead and second passive element support leads 290-291, as follows: Figure 2A-2B As shown. Each passive component support lead pair can be positioned adjacent to the die pad 226 and separated from the die pad 226 via the die-to-lead separation region 232. Figure 2A In the example shown, eight passive component support lead pairs are positioned adjacent to the die pad 226. In some examples, the lead frame assembly 202 may contain fewer passive component support lead pairs.

[0030] continue Figure 2A-2B In some cases, the first passive component support lead 290 may be positioned adjacent to (or near) the corresponding carrier pad 210. The first passive component support lead 290 includes an outer lead portion 234, which may be structurally similar to the outer lead portion 230 of the connecting lead 205. The outer lead portion 234 of the passive component support lead 203 and the outer lead portion 230 of the connecting lead 205 may extend in the same or similar directions relative to the die pad 226 (e.g., away from the die pad 226, such as...). Figure 2A-2B (As shown). As another example, the second passive component support lead 291 may be positioned along the peripheral portion 224 at a predefined interval (or position) from the first passive component support lead 290, wherein several connecting leads are inserted between the first passive component support lead and the second passive component support leads 290-291.

[0031] For example, the first passive component support lead 290 includes a first inner lead arm, which can correspond to Figure 1B The first inner lead arm 116. The first inner lead arm may be defined by the first transition region 242, the first intermediate segment 244, the second transition region 246, and the first terminal segment 248 of the lead frame assembly 202. For example... Figure 2A As shown, the first inner lead arm may have a first portion (e.g., a first intermediate segment 244) wider than the second portion (e.g., the first terminal segment 248). The first intermediate segment 244 may extend from a first transition region 242, in which the outer lead portion 234 transitions into the first intermediate segment 244. The first intermediate segment 244 may extend at an angle relative to the outer lead portion 234, away from the carrier pad 210 and inward toward the periphery of the die pad 226 (e.g., toward the edge 254 of the die pad 226, such as...). Figure 2A (As shown) The first terminal segment 248 may extend from the second transition region 246, wherein the first intermediate segment 244 transitions into the first terminal segment 248. The first terminal segment 248 extends substantially parallel to the corresponding edge of the die pad 226 (e.g., edge 254 of the die pad 226). In some instances, the first terminal segment 248 is substantially perpendicular to the edge 256 of the die pad 226, such as... Figure 2A-2B As shown.

[0032] For example, the second passive component support lead 291 includes a second inner lead arm, which can correspond to Figure 1B The second inner lead arm 118. The second inner lead arm may be defined by the second intermediate segment 236, the third transition region 250, and the second terminal segment 238 of the lead frame assembly 202. Figure 2A As shown, the second inner lead arm may have a first portion (e.g., a second intermediate segment 236) wider than the second portion (e.g., the second terminal segment 238). The second intermediate segment 236 may be substantially parallel to the outer lead portion 234 (e.g., extending in the same direction or substantially perpendicular to the edge 254 of the die pad 226). The second terminal segment 238 may extend from the third transition region 250, wherein the second intermediate segment 236 transitions into the second terminal segment 238. The second terminal segment 238 may be substantially perpendicular to the edge 256 of the die pad 226, as... Figure 2A-2BAs shown. The second intermediate segment 236 may extend in a direction substantially similar to that of the outer lead portion 234, and thus may follow approximately the same longitudinal axis before transitioning to the second terminal segment 238 at the third transition region 250. Therefore, the first terminal segment 238 and the second terminal segment 248, which may be thicker than the first intermediate segment 244 and the second intermediate segment 236, may extend parallel to the edge 254 of the die pad 226. The first terminal segment 238 and the second terminal segment 248 may be positioned (or located) within the die-to-lead separation region 232, spaced apart from the edge 254 of the die pad 226 and the corresponding inner lead portion 228 of the corresponding connecting lead 205, as shown. Figure 2A-2B As shown.

[0033] In some instances, each outer lead portion 234 of the passive component support lead 203 may have substantially the same thickness, width, and length as the outer lead portion 230 of the connecting lead 205. In still other instances, the first intermediate segment 244 and the second intermediate segment 236 may have substantially the same thickness and width, but in some cases, they may have different corresponding lengths. The first terminal segment 248 and the second terminal segment 238 may have substantially the same thickness and / or width. In some instances, the first terminal segment 248 and the second terminal segment 238 may have the same or similar lengths.

[0034] As another example, the first terminal segment 248 and the second terminal segment 238 may have widths different from the widths of the first intermediate segment 244, the second intermediate segment 236, and / or the external lead portions 230 and 234. The widths of the first terminal segment 248 and the second terminal segment 238 may be referred to as passive bonding widths, because, for example, the passive elements of capacitor 270 (e.g., corresponding to one of the passive elements 102, such as...) Figure 1A-1B As shown, the bottom surface 272 of each of these terminal segments is bonded to it. Figure 2A-2B As shown. In some instances, the widths of the first terminal segments and the second terminal segments 236-248 can be substantially similar to or greater than the width of the body of the capacitor 270 bonded to these lead portions, thereby providing sufficient contact area for the electrical and mechanical stability of the capacitor 270. Each of the first terminal segments 248 and the second terminal segments 238 has a bottom surface 272 serving as a bonding interface for the capacitor 270 and an opposing top surface 274, which can remain exposed on the top side of the lead frame assembly 202, as... Figure 2A As shown.

[0035] For example, capacitor 270 may be electrically and mechanically coupled to the corresponding bottom surfaces 272 of the first terminal segment 248 and the second terminal segment 238 on the bottom side of the lead frame assembly 202, such as... Figure 2BAs shown. Capacitor 270 can be coupled to bottom surface 272 using solder joint 280. Capacitor 270 includes two opposing terminals, wherein a first terminal 276 of capacitor 270 is bonded to the bottom surface 272 of a first terminal segment 248 via solder joint 280. A second terminal 278 of capacitor 270 is bonded to the bottom surface 272 of a second terminal segment 238. The first and second terminals 276-278 of capacitor 270 may correspond to metallized end caps or pads located at opposite ends of the body of capacitor 270. In some cases, the end pads of capacitor 270 may be referred to as landing pads.

[0036] Each of the first terminal 276 and the second terminal 278 of capacitor 270 may have a length (also referred to as the landing pad length) extending along the longitudinal axis of the body of capacitor 270, corresponding to the distance between the edges of the first and second terminals of capacitor 270. The landing pad length may match or exceed the contact area of ​​the bottom surface 272 of the first terminal segment 248 and the second terminal segment 238 (e.g., the end portions, such as the first end portion or the second end portions 282-284, as shown). Figure 2A (As shown). In some instances, the width of each landing pad (also referred to as the landing pad width) may extend across the lateral dimension of the body of capacitor 270. The landing pad width may be substantially equal to or slightly smaller than the width of the first terminal segment 248 and the second terminal segment 238.

[0037] In some instances, the widths of the first terminal segment 248 and the second terminal segment 238 may be based on the width of the landing pad of the capacitor 270 to provide sufficient electrical and mechanical coupling. For example, the width of each of the first terminal segment 248 and the second terminal segment 238 may be sized to provide a bonding interface for the corresponding landing pad of the capacitor 270 (e.g., the first terminal 276 and the second terminal 278). In some embodiments, the widths of the first terminal segment 248 and the second terminal segment 238 may be equal to or slightly larger than the width of the landing pad of the capacitor 270 to maximize the contact area between the first and second terminals 276-278 and the lead frame assembly 202. Such configurations can be used to increase the reliability of the solder joint by promoting uniform solder wetting across the bonding surface. A larger lead portion width relative to the width of the landing pad of the capacitor 270 can further reduce the resistance at the connection interface, thereby improving signal integrity and heat dissipation. In some cases, where space constraints or specific electrical properties may be required, the first terminal segment 248 and the second terminal segment 238 may have widths proportional to the width of the landing pad of the capacitor 270 to increase solder coverage while reducing overhangs or misalignments. Therefore, the leadframe assembly 202 can be manufactured with first terminal segments 248 and second terminal segments 238 that can accommodate variations in the capacitor size of the capacitor 270. In some instances, the capacitor 270 is a ceramic capacitor, such as a multilayer ceramic capacitor (MLCC). Therefore, by setting the widths of the first terminal segments 248 and the second terminal segments 238 based on the width of the landing pad of the capacitor 270, the capacitor 270 can be secured to the leadframe assembly 202 with minimal or negligible impact on electrical performance.

[0038] In some instances, the first terminal segment 248 and the second terminal segment 238 may be positioned such that the respective ends of these terminal segments face each other (in opposite directions) but remain separated by the terminal isolation gap 214, as shown below. Figure 2B As shown. The terminal isolation gap 214 electrically isolates the first terminal segment 248 from the second terminal segment 238, thereby preventing accidental short circuits between these segments, while accommodating the placement of the capacitor 270. The terminal isolation gap 214 extends between the first end portion 282 of the first terminal segment 248 and the second end portion 284 of the second terminal segment 238. Figure 2BAs shown, capacitor 270 can be coupled to the bottom surface 272 of the first end and the second portion 282-284. In some embodiments, the width of the terminal isolation gap 214 can be sized based on the width of capacitor 270, such that capacitor 270 can be positioned above the terminal isolation gap 214, such that the first terminal and the second terminal 276-278 of capacitor 270 rest on the solder joint 280 at the corresponding first end portion and the second end portion 282-284, respectively. In some embodiments, the terminal isolation gap 214 can have a width slightly greater than or approximately equal to the width of capacitor 270. The length of the terminal isolation gap 214 can extend along the direction between the first end portion 282 and the second end portion 284, corresponding to the terminal segment separation distance between the first terminal segment 248 and the second terminal segment 238. In some embodiments, the length of the terminal isolation gap 214 between the ends of the first terminal segment 248 and the second terminal segment 238 can be based on the spacing required for capacitor placement (e.g., the length of capacitor 270). Therefore, the terminal isolation gap 214 separates the two terminal segments of the capacitor 270, each terminal segment being sized to have the width to accommodate the terminals of the capacitor 270, while other portions of the passive element support lead 203 (e.g., as described herein) may have a smaller width.

[0039] Figure 2C-2D It shows that it can be used to manufacture Figure 1A Another example of the lead frame assembly 296 of the semiconductor device 100, which is similar to Figure 2A-2B The lead frame assembly 202. In some instances, the lead frame 106 of the semiconductor device 100 is a processed version of the lead frame assembly 296, which has undergone passive component attachment and subsequent manufacturing steps. For clarity and consistency, unless indicated herein, in relation to Figure 2C-2D The description uses and combines Figure 2A-2B The figure references used are similar to those used in the figures. Figure 2C The top side view of the lead frame assembly 296 is shown, while Figure 2D The bottom side view of the lead frame assembly 296 is shown, which is consistent with... Figure 2C The top and side views are opposite.

[0040] exist Figure 2C-2D In this configuration, the tie rod 298 that couples the die pad 226 to the lead frame assembly 296 extends at an angle, rather than as... Figure 2A-2BThe pad 226 is essentially in the same plane as the lead frame assembly 298. This angular orientation of the tie rod 298 positions the pad 226 at a lower vertical level relative to the outer portion 224 of the lead frame assembly 296, where the inner and outer lead portions of the passive component support leads 290-291 and the connecting lead 205 are located at this lower vertical level. As a result, the first and second passive component support leads 290-291 extend laterally from their raised positions within the lead frame assembly 296 toward the pad 226, such that the inner lead arms of these support leads are positioned at a higher vertical level than the pad 226. This stepped configuration introduces a vertical separation between the pad 226 and the inner lead arms of the passive component support leads 290-291, as... Figure 2C-2D As shown.

[0041] Figure 3-10 This illustrates the use of semiconductor devices (e.g., for manufacturing (e.g., assembling)). Figure 1A The method for the semiconductor device 100) includes various stages. The method may begin in a first stage 300, in which a leadframe assembly 302 may be provided or retrieved. In some instances, the leadframe assembly 302 is part of a leadframe strip comprising multiple examples of the leadframe assembly 302. In some instances, the leadframe assembly 302 is generated in the first stage 300, and thus the leadframe strip is generated. The leadframe assembly 302 may correspond to... Figure 2A-2B The lead frame assembly 202 (or in other cases, corresponding to) Figure 2C-2D The lead frame assembly 296, without passive components such as capacitors, includes capacitor 270, such as... Figure 2A-2B (or Figure 2C-2D As shown in the diagram. Therefore, for the sake of clarity and conciseness, in Figure 3-10 The example method uses and in Figure 2A-2D Similar reference numerals are used in the examples. Information regarding single lead frame assemblies is provided. Figure 3-10 The method is described. However, in instances where leadframe strips are used, multiple leadframe assemblies spanning the leadframe strips may simultaneously, sequentially, or in parallel perform the same or similar stages (or operations) to produce a similar effect. Figure 1A The corresponding semiconductor package of the semiconductor device 100.

[0042] For example, in the second stage 400, solder 402 (e.g., solder paste) may be placed on the bottom surface 272 of the first terminal segment 248 and the second terminal segment 238 on the bottom side of the lead frame assembly 202, such as... Figure 4 As shown. In some instances, in the second stage 400, the flip-out lead frame assembly 202 is used for solder placement. Figure 3 Perspective view (e.g., top side view) corresponding to lead frame assembly 202. Figure 4 An enlarged view of the bottom portion 261 of the lead frame assembly 202 is shown, the bottom portion 261 being as shown... Figure 3 The top side portion 260 shown is opposite. For example, solder 402 may be applied to the bottom surface 272 at the first end portion 282 of the first terminal segment 248, and solder 402 may be applied to the bottom surface 272 at the second end portion 284 of the second terminal segment 238.

[0043] In some other instances, before placing the solder 402, the template can be aligned with cutouts on the underside of the lead frame assembly 202 to match the positions of the first and second end portions 282-284. The template can then be lifted, leaving a controlled solder paste deposit on the bottom surface 272 at the first and second end portions 282-284, such as... Figure 4 As shown. In some instances of using leadframe strips, solder 402 can be applied across all leadframe assemblies of the leadframe strip. For example, a stencil can be aligned on the underside of the leadframe strip, with cutouts corresponding to the locations of the first and second end portions 282-284 of each leadframe assembly of the leadframe strip. Solder 402 can be spread onto the stencil to fill the cutouts above the first and second end portions 282-284 of each leadframe assembly. The stencil can then be lifted, leaving a controlled solder paste deposit on the bottom surface 272 of the first and second end portions 282-284, as shown. Figure 4 As shown.

[0044] In Phase 3 500, passive component attachment processes can be implemented. In some cases, in parallel batch processes, such as capacitor 270 (or similar...),... Figure 1AOne or more passive components of passive component 102 can be fastened to each lead frame assembly of the lead frame strip containing lead frame assembly 202 (or lead frame assembly 296). For example, the first and second terminals 276-278 of capacitor 270 can be oriented (or aligned) with solder deposits on the first and second end portions 282-284 and positioned above the terminal isolation gap 214, such that each of the first and second terminals 276-278 of capacitor 270 contacts solder 402. A pick-and-place machine can be used to position capacitor 270. Once each capacitor 270 is positioned (e.g., the first and second terminals 276-278 are seated or rested on solder 402 at one of the first and second end portions 282-284), the assembly can undergo reflow soldering to bond the first and second terminals 276-278 to one of the first and second end portions 282-284, thereby creating an intermediate structure 502, as... Figure 5 As shown. The solder 402 deposited at the first end portion and the second end portions 282-284 solidifies into a welded joint 280, as... Figure 5 As shown. Figure 5 An enlarged view of the bottom portion 261 of the lead frame assembly 202 is shown.

[0045] In some instances, the passive component attachment process can be repeated for any number of passive components (e.g., capacitors, resistors, inductors, diodes, etc.) that need to be attached to the leadframe assembly 202. Thus, in some instances, each passive component can be attached to a pair of passive component support leads, such as a first passive component support lead and a second passive component support lead 290-291. The first and second passive component support leads 290-291 include bonding surfaces for securing the passive component to the leadframe assembly 202 (e.g., capacitor 270). In some instances where leadframe strips are used, reflow soldering can be performed across all leadframe assemblies of the leadframe strip, allowing multiple passive components to be attached to corresponding leadframe assemblies. Solder 402 deposited at the first end portion and the second end portion 282-284 of each leadframe assembly solidifies into a solder joint 280, as shown below. Figure 5 As shown.

[0046] In some instances, the method proceeds to a fourth stage 600, in which the lead frame assembly 202 is flipped to produce the lead frame assembly 602, as shown below. Figure 6As shown. In other instances, the fourth stage 600 may be omitted, and the method may proceed to a fifth stage 700. For example, the method may proceed to a fifth stage 700, where a die 702 (e.g., corresponding to die 110 in FIG. 1) may be attached to a leadframe assembly 202. The die 702 may be attached to a die pad 226 of the leadframe assembly 202. For example, in the fifth stage 700, a die attachment process may be used to attach the die 702 to the die pad 226 of the leadframe assembly 202. This process may include applying a die attachment material (e.g., adhesive epoxy, conductive paste, or solder) to the die pad 226. The die 702 may be placed on the die pad 226. Once positioned, the leadframe assembly 602 with the die 702 may undergo a curing or reflow process, depending on the type of die attachment material used, to secure the die 702 to the leadframe assembly 202, providing a leadframe assembly 704 with the die attached, such as... Figure 7 As shown. This attachment provides mechanical stability and heat dissipation, facilitating subsequent wire bonding and encapsulation steps. In some instances using leadframe stripes, multiple dies can be attached in parallel to the corresponding leadframe assemblies of the leadframe strip using a batch die attachment process.

[0047] In stage 6 800, a wire bonding process can be performed to establish an electrical connection between the die 702 and the lead frame assembly 704 attached to the die, thereby producing a wire-bonded lead frame assembly 810, such as... Figure 8As shown. In some instances where leadframe strips are used, a batch wire bonding process can be performed across all leadframe assemblies of the leadframe strip to form a corresponding electrical connection between the corresponding die and the leadframe assembly. Wire bonding can be used to form an electrical interconnect between the die connector (also referred to in some cases as die pad) of die 702 and the corresponding inner lead portion (e.g., inner lead portion 228 and / or first terminal segment 248 and second terminal segment 238) of leadframe assembly 202. In some instances, a first wire 816 can be used to form a first wire bond between the first die connector 802 of die 702 and the top surface 274 of the first terminal segment 248. As an example, the first end of the first wire (e.g., gold (Au), aluminum (Al), or copper (Cu)) 816 can be placed on the first die connector 802 and the first end of the first wire 816 can be secured to the first die connector 802 using ultrasonic, thermoacoustic, or thermocompression bonding. The second end of the first wire 816 can be fastened to the top surface 274 of the first terminal segment 248 in the same or similar manner as the first end of the wire. In some instances, a second wire 818 can be used to form a second wire bond between the second die connector 804 of the die 702 and the second terminal segment 238. In still other instances, a third wire 220 can be used to form a third wire bond between the third die connector 806 of the die 702 and the corresponding inner lead portion 228 of the corresponding connecting lead 205. As described herein, the second and third wire bonds can be formed in the same or similar manner as the first wire bond. The wire bonding process can be repeated as needed to form a connection between the additional die connector of the die 702 and the corresponding lead portion of the lead frame assembly 202, including the additional terminal segment and / or inner lead portion of the connecting lead 205.

[0048] For example, in stage 900, an encapsulation process is performed to apply molding compound 904 around a portion of the leadframe assembly 810 that is bonded to the wires, thereby producing an encapsulated leadframe assembly 902, such as... Figure 9As shown. The encapsulation process is used to protect the die 702, wire bonds, and passive components, such as capacitor 270, while allowing areas of the leadframe assembly 202 to remain exposed to facilitate electrical connectivity and subsequent processing steps. For example, during the encapsulation process, a molding compound (e.g., an epoxy thermosetting resin) can be introduced into the mold cavity under controlled pressure and temperature conditions. The molding compound flows around a predetermined portion of the wire-bonded leadframe assembly 810, at least partially covering the top and bottom sides of the wire-bonded leadframe assembly 810, while exposing the outer lead portion 234 of the passive component support lead 203, the outer lead portion 234 of the connecting lead 205, and the baffle 204 therebetween. The carrier pad 210 may also remain uncovered (e.g., to support alignment, processing, and / or individual operations). After the molding stage is completed, a curing process can be applied to harden the molding compound 904, thereby producing the encapsulated leadframe assembly 902, as shown. Figure 9 As shown. In some instances where leadframe strips are used, an encapsulation process is performed across the leadframe strips, thereby allowing the leadframe assembly to encapsulate the leadframe strips.

[0049] In the eighth stage 1000, trimming and lead forming operations can be performed on the encapsulated lead frame assembly 902 to produce a semiconductor device 1002, such as... Figure 10 As shown. Semiconductor device 1002 may correspond to semiconductor device 100, such as... Figure 1A As shown. For example, in stage 8 1000, after the encapsulation process, a first trimming operation can be performed to remove the barrier 204 that temporarily connects adjacent leads during manufacturing. The barrier 204 is cut off to electrically isolate the individual leads, thereby ensuring that adjacent passive component support leads and connecting leads 203-205 are no longer connected by the barrier 204. A lead forming operation can be performed to shape the outer lead portions 230, 234 of the passive component support leads and connecting leads 203-205 into predetermined configurations that facilitate surface mounting or through-hole insertion. The lead forming process may include bending the outer lead portions 230, 234 at a desired angle to achieve the desired lead profile. Specific lead configurations may vary based on packaging factors, wherein the leads are formed into gull wings, J-shaped leads, or other suitable shapes to allow mounting on a PCB or other substrate. The encapsulated lead frame assembly 902 is held in place during the lead forming process via the carrier pads 210 and tool holes 212. Once lead formation is complete, a trimming operation can be performed to remove the carrier pads 210, thereby creating the semiconductor device 1002, such as... Figure 10 As shown. In some instances where leadframe strips are used, trimming and lead forming can be performed on multiple encapsulated leadframe assemblies of the leadframe strip, wherein single-split is performed to provide a similar effect to... Figure 1A The various semiconductor packages of the semiconductor device 100.

[0050] Figure 11 It is manufacturing containing Figure 2A-2B Lead frame assembly 202 or Figure 2C-2D An example of method 1100 for leadframe strips of leadframe assembly 296. The leadframe strips may comprise multiple examples of leadframe assemblies 202, 296 and can be manufactured using etching techniques. According to the examples herein, the leadframe strips can be manufactured such that each leadframe assembly contains... Figure 2A-2D The first passive component support lead and the second passive component support lead 290-291 further provide a bonding surface (e.g., bottom surface 272) for attaching passive components (e.g., capacitor 270) during semiconductor packaging manufacturing, as described herein.

[0051] At block 1102, method 1100 may begin by retrieving or selecting a metal sheet, such as copper or a copper alloy (e.g., Cu-Fe, Cu-Ni-Sn, etc.). At block 1104, a photoresist material may be applied to one or more sides of the metal sheet to form a photoresist layer, allowing selective removal of the metal material during the etching process. The photoresist layer serves as a protective coating and is patterned to define the structural features of the leadframe strips, including each leadframe assembly 202, 296.

[0052] At frame 1106, a photomask (or template) is aligned on the surface (e.g., the top surface) of a metal sheet having an applied photoresist layer. The photomask includes a lead frame pattern that defines specific areas of the photoresist that are exposed to ultraviolet (UV) light and areas that will be shielded. Thus, the photomask defines a structural layout of the lead frame strips, allowing for selective removal of metal to form lead frame features, including passive element support leads and connecting leads 203-205, such as... Figure 2A-2D As shown. The leadframe pattern specifies the geometric design of the conductive metal features within the leadframe strip, including the arrangement, shape, and dimensions of each leadframe assembly.

[0053] For example, the lead frame pattern includes a connecting lead layout that defines an inner lead portion 228 and an outer lead portion 230, and thus defines a connecting lead 205, such as... Figures 2A-2D As shown. The lead frame pattern may include a passive element support lead layout defining the first intermediate segment 244 and the second intermediate segment 236, such as... Figures 2A-2DAs shown. The passive component support lead layout further includes a first terminal segment 248 and a second terminal segment 238 that can be sized to allow attachment of passive components, as described herein. Additionally, the lead frame pattern includes a die pad layout defining die pad 226, a tie rod layout defining tie rod 208 (or tie rod 298), and a barrier rod layout defining barrier rod 204, as shown. Figure 2A-2B or Figure 2C-2D As shown. In some instances, the leadframe pattern additionally includes a carrier pad layout defining each of the carrier pads 210, such as... Figure 2A-2D As shown.

[0054] At frame 1108, the method includes transferring a lead frame pattern onto a photoresist layer. Photolithography can be used to transfer the lead frame pattern onto the photoresist layer. Once the photomask (lead frame pattern) is aligned, UV light can be guided through the transparent areas of the mask to expose corresponding areas of the photoresist layer. In one example, for a positive photoresist, the exposed areas may undergo chemical degradation, making them soluble in the developer solution. In another example, for a negative photoresist, the exposed areas may undergo polymerization, making them insoluble in the developer solution, while the unexposed areas are dissolved.

[0055] At frame 1110, an etching process can be performed to selectively remove metal from the exposed area of ​​the metal sheet based on the transferred lead frame pattern, thereby forming the structural features of the lead frame strip, for example... Figure 2A-2B The structural features of the lead frame assembly 202 shown are as follows: Figure 2C-2D The structural features of the leadframe assembly 296 are shown. An etching process removes material from areas where the photoresist material has been developed away, while the remaining photoresist protects the unetched areas of the leadframe pattern. Available etching types include wet chemical etching or dry (plasma) etching. In some instances, after etching is complete, the method may proceed to frame 1112, where any remaining photoresist layer can be removed, resulting in a leadframe strip. The leadframe strip includes multiple examples of leadframe assemblies 202 (or leadframe assemblies 296), each configured for semiconductor packaging fabrication as described herein. In some instances, the leadframe strip may undergo a cleaning process to remove residual etchant. In still other instances, surface plating may be applied to enhance the solderability and oxidation resistance of the leadframe strip.

[0056] Figure 12 It is used to manufacture products containing, for example Figure 2A-2B The lead frame assembly 202 shown or as shown Figure 2C-2DThis is an example of another method 1200 for the leadframe strip of the leadframe assembly 296 shown. The leadframe strip may comprise multiple examples of leadframe assemblies 202 (or leadframe assemblies 296) and can be manufactured using stamping techniques. According to the examples herein, the leadframe strip may be manufactured such that each leadframe assembly includes a first passive element support lead and second passive element support leads 290-291, thereby providing a bonding surface (e.g., bottom surface 272) for attaching passive elements (e.g., capacitor 270) during semiconductor packaging fabrication, as described herein.

[0057] At block 1202, method 1200 may begin by retrieving or providing a sheet or strip of metal, in some cases, made of conductive material, as described herein. At block 1204, a die-stamping (or punching) process may be used to form the leadframe structure. The stamping system may include multiple stations that sequentially perform various operations on the sheet as it advances through the stamping system. For example, each die station may perform predefined cutting, forming, and / or stamping operations to incrementally shape the sheet to provide a leadframe strip. The stamping process may define the structural features of each leadframe assembly (e.g., leadframe assemblies 202, 296), including passive component support leads 203, connecting leads 205, die pads 226, tie rods 208 (or tie rods 298), baffles 204, and carrier pads 210, as described herein. Figure 2A-2D As shown.

[0058] At frame 1206, a sheet of metal having formed a leadframe assembly can be output as a leadframe strip. In some instances, at frame 1206, the leadframe strip may undergo deburring and cleaning processes to remove sharp edges and residual material from the stamping process. In some instances, chemical or mechanical cleaning steps may be performed to remove oxidation, particulate contaminants, or residual lubricant used during stamping. In some instances, at frame 1206, a surface plating process may be applied to the leadframe strip to enhance solderability and oxidation resistance. Electroplating, dip plating, or other metal deposition techniques can be used to perform the plating process.

[0059] Figure 13 It is used to manufacture similar to Figure 1A The semiconductor device 100 shown or such Figure 10 An example of method 1300 for multiple semiconductor packages of the semiconductor device 1002 shown. Method 1300 may begin at block 1302 with the retrieval or provision of a leadframe strip comprising a leadframe assembly. In some cases, it may be based on Figure 11 Method 1100 or Figure 12An example of method 1200 produces leadframe strips. Each leadframe assembly of each leadframe strip may include passive element support leads (e.g., first passive element support leads and second passive element support leads 290-291, as shown). Figure 2A-2D (As shown). At box 1304, passive components can be secured (e.g., bonded, as described herein) to the passive element support leads of each leadframe assembly in the same or similar manner as described herein. Secure the passive components to the passive element support leads, coupling the passive element support leads to each other, thereby forming a conductive path across the passive components while maintaining electrical isolation between these respective leadframe segments.

[0060] At block 1306, a die (e.g., die 702) may be attached to a die pad (e.g., die pad 226) of each leadframe assembly in a manner similar to or identical to that described herein. At block 1308, a wire bonding process may be performed to form a wire bond between each attached die and the corresponding leadframe assembly of the leadframe strip, as described herein. In some instances, the wire bonding process may be used to electrically connect each die to a first passive component support lead and a second passive component support lead in a manner similar to or identical to that described herein. At block 1310, molding compound may be applied to the leadframe strip to at least partially encapsulate the leadframe assembly in a manner similar to or identical to that described herein, thereby producing a molded leadframe strip. For example, the molding compound encapsulates at least the inner lead portion of the leadframe assembly while exposing the outer lead portion of the leadframe assembly. At frame 1312, the molded leadframe strip is processed to produce a single semiconductor package. For example, processing the molded leadframe strip may include isolating leads by trimming spacers, shaping outer lead portions into a predetermined configuration, and splitting the leadframe strip to provide multiple semiconductor packages.

[0061] In this specification, unless otherwise stated, "about," "approximately," or "substantially" preceding a parameter means within + / - 10% of said parameter. Modifications to the described examples are possible within the scope of the claims, and other examples are also possible.

Claims

1. A semiconductor package comprising: Nude film; Lead frame, comprising: A bare die pad, wherein the bare die is coupled to the bare die pad; as well as A set of leads, including a surface, wherein a passive component is coupled to the surface of the set of leads, the surface being electrically connected to at least the die.

2. The semiconductor package of claim 1, wherein the passive component is coupled to the bottom side of the lead frame, the bottom side being opposite to the top side of the lead frame to which the die is coupled.

3. The semiconductor package of claim 1, wherein each of the set of leads comprises: The external lead portion extends outward from the semiconductor package and establishes an electrical connection between the passive component and the external circuit system; as well as An inner lead arm extends from the periphery of the semiconductor package toward the die pad, the inner lead arm having a surface in the surface that is coupled to the passive component.

4. The semiconductor package of claim 3, wherein the passive component comprises a first terminal and a second terminal, wherein: The first terminal of the passive component is coupled to a first surface in the bonding surface of the first inner lead arm of the first lead in the set of leads; and The second terminal of the passive component is coupled to the second surface of the surface of the second inner lead arm of the second lead in the set of leads.

5. The semiconductor package of claim 4, wherein the first terminal and the second terminal of the passive component are coupled to one of the first surface and the second surface via a solder joint.

6. The semiconductor package of claim 1, wherein the set of leads comprises a first lead and a second lead, and wherein: The first lead includes: The first external lead portion extends outward from the semiconductor package; A first inner lead arm extends from a peripheral portion of the semiconductor package toward the die pad within the semiconductor package, the first inner lead arm having a first surface among the surfaces; The second lead includes: The second external lead portion extends outward from the semiconductor package; A second inner lead arm extends from the peripheral portion of the semiconductor package toward the die pad within the semiconductor package, the second inner lead arm having a second surface among the surfaces; and The first terminal of the passive component is coupled to the first surface of the first inner lead arm, and the second terminal of the passive component is coupled to the second surface of the second inner lead arm.

7. The semiconductor package of claim 6, wherein the first inner lead arm comprises: A first transition region connects the first outer lead portion to the first intermediate segment; The first intermediate segment extends from the first transition region toward the second transition region; The second transition region connects the first intermediate segment to the first terminal segment; and The first terminal segment includes the first surface to which the first terminal of the passive component is coupled.

8. The semiconductor package of claim 7, wherein the second inner lead arm comprises: The second intermediate segment connects the second outer lead portion to the third transition region; The third transition region connects the second intermediate segment to the second terminal segment; and The second terminal segment includes the second surface to which the second terminal of the passive component is coupled.

9. The semiconductor package of claim 8, wherein the first terminal segment and the second terminal segment have a top surface and a bottom surface, the first surface corresponding to the bottom surface of the first terminal segment, and the second surface corresponding to the bottom surface of the second terminal segment.

10. The semiconductor package according to claim 9, wherein: The first wire is bonded to the top surface of the first terminal segment; and The second wire is bonded to the top surface of the second terminal segment.

11. The semiconductor package according to claim 8, wherein: The set of leads are passive component support leads; and The first terminal segment and the second terminal segment are located within the die-to-lead separation region, which corresponds to the gap between at least some of the inner lead segments of the connection leads of the semiconductor package and the edge of the die pad.

12. The semiconductor package according to claim 9, wherein: The first terminal segment has a first end portion, and the second terminal segment has a second end portion; and The width of the first end portion and the width of the second end portion are approximately equal to or greater than the width of the first terminal and the second terminal of the passive component.

13. A method comprising: One or more leadframe assemblies are provided, each leadframe assembly including a die pad and a set of leads, each of the leads including an inner lead arm extending from a peripheral portion of the respective leadframe assembly toward the die pad. Attach the passive component to the inner lead arm; The bare die is attached to the bare die pad of each leadframe assembly; An electrical connection is formed between the bare die and the corresponding lead frame assembly; Apply molding material to encapsulate at least a portion of each leadframe assembly to provide one or more molded leadframe assemblies; as well as Process the one or more molded lead frame assemblies to form one or more semiconductor packages.

14. The method of claim 13, wherein attaching the passive component comprises attaching a first terminal and a second terminal of the passive component to the respective surfaces of a first inner lead arm and a second inner lead arm using solder.

15. The method of claim 13, wherein each lead in the set of leads comprises: The outer lead portion is located at the peripheral portion of the lead frame and extends away from the die pad; as well as The inner lead arms extend from the peripheral portion of the semiconductor package toward the die pad, and each inner lead arm has a surface to which a corresponding terminal of the passive component is coupled.

16. The method of claim 13, wherein attaching the passive component comprises: Flip each leadframe assembly so that the back side of each leadframe assembly is oriented opposite to the top side where the die is attached to the die pad; as well as The passive component is attached to the back side of the lead frame assembly, wherein the passive component is coupled to the bottom surface of the inner lead arm, the bottom surface being opposite to the top surface of the inner lead arm on the top side of the lead frame assembly.

17. The method of claim 14, wherein the one or more leadframe assemblies are part of a leadframe strip, and the leadframe strip is produced by a stamping or etching process to define the structural features of each leadframe assembly, including the die pads and the set of leads.

18. A method comprising: A leadframe strip is provided comprising multiple leadframe assemblies, each leadframe assembly including a die pad and a set of leads, each of the leads including an inner lead arm extending from a peripheral portion of the leadframe assembly toward the die pad. The passive component is attached to the inner lead arm of each lead frame assembly in the lead frame strip; The bare die is attached to the bare die pad of each leadframe assembly; An electrical connection is formed between each die and its corresponding leadframe assembly; Apply molding material to encapsulate at least a portion of each leadframe assembly, thereby providing a molded leadframe strip; as well as The molded leadframe strip is processed by separating the individual leadframe assemblies from the molded leadframe strip to form multiple semiconductor packages.

19. The method of claim 18, wherein the leadframe strip is produced by a stamping or etching process to define the structural features of each leadframe assembly, including the die pads and the set of leads.

20. The method of claim 18, wherein attaching the passive component comprises: The lead frame strip is flipped from its initial orientation (top side upward) to a reverse orientation (back side upward), with the back side opposite the top side; and The passive component is fastened to the back side of each lead frame assembly of the lead frame strip, wherein the passive component is coupled to the bottom surface of the inner lead arm, the bottom surface being opposite to the top surface of the inner lead arm on the top side of the lead frame strip.

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