Power module and manufacturing method thereof, controller and electrical appliance

Abstract

The application discloses a power module, a manufacturing method thereof, a controller and an electrical appliance. The power module comprises at least one power chip, a first substrate and a conductive pin. In a first direction, one side of the power chip comprises a first lead frame. In the first direction, one side of the first substrate comprises a substrate copper clad body. The first lead frame is fixedly attached to the substrate copper clad body and electrically connected to the substrate copper clad body. The conductive pin is fixedly attached to the substrate copper clad body and electrically connected to the substrate copper clad body. The conductive pin extends in the first direction. The power module can improve production and testing efficiency, reduce maintenance cost and maintenance efficiency, and improve operation stability of the power module.

Description

Technical Field

[0001] This application belongs to the field of semiconductor technology, specifically relating to a power module and an electronic device. Background Technology

[0002] A power module is a hybrid integrated power electronic device. Due to its advantages such as high current density, low saturation voltage, low drive power, and small size, it is widely used in various fields.

[0003] In related technologies, power modules consist of multiple chip modules, which are interconnected using gold or aluminum wire bonding before being packaged. Using wire bonding for inter-chip interconnection not only extends the processing time of the power module but also reduces the efficiency of chip module replacement and maintenance. Summary of the Invention

[0004] This application aims to provide a power module and its manufacturing method, controller and electrical components, which at least solves one of the problems of low production efficiency and low maintenance and replacement efficiency of existing power modules.

[0005] To solve the above-mentioned technical problems, this application is implemented as follows: In a first aspect, embodiments of this application provide a power module, which includes at least one power chip, a first substrate, and conductive pins. Along a first direction, one side of the power chip includes a first lead frame; along the first direction, one side of the first substrate includes a substrate copper clad body, the first lead frame is attached and fixed to the substrate copper clad body and electrically connected; the conductive pins are fixed to the substrate copper clad body and electrically connected, and the conductive pins extend along the first direction.

[0006] In some embodiments, the power chip further includes a chip body and a molding compound. Along the first direction, the chip body is disposed on the side of the first lead frame away from the copper clad substrate. The molding compound covers the outer periphery of the chip body and the side of the first lead frame away from the copper clad substrate along the first direction.

[0007] In some embodiments, the above-mentioned plastic encapsulation structure is provided with a conductive channel, and a conductive body is electroplated in the conductive channel. One end of the conductive body is connected to the side of the chip body away from the first lead frame along the first direction, and the other end is connected to the first lead frame.

[0008] In some embodiments, the above-mentioned molding structure includes a body portion and a molding portion. The body portion covers the outer periphery of the chip body and the side of the first lead frame away from the copper-clad substrate along the first direction. The conductive channel is formed in the body portion. The conductive channel extends through the side of the body portion away from the first lead frame along the first direction to form an electroplating hole. The molding portion is used to seal the electroplating hole.

[0009] In some embodiments, the first lead frame includes a frame body and pin portions, the pin portions being disposed on both sides of the frame body along a second direction, the frame body being connected to the chip body, and the pin portions being connected to the conductor.

[0010] In some embodiments, the power module further includes a housing assembly, in which the power chip and the first substrate are disposed, and the housing assembly is filled with insulating sealant. Along the first direction, the conductive pins extend out of the housing assembly.

[0011] In some embodiments, the housing assembly includes a housing, a base plate, and a cover. Along the first direction, both ends of the housing are open. The base plate is connected to one of the openings of the housing, and the cover is connected to the other opening of the housing. The first substrate is fixed to the base plate, and the conductive pins extend out of the cover.

[0012] Secondly, embodiments of this application propose a method for manufacturing a power module, the method comprising: A first substrate and a power chip are provided. Along a first direction, one side of the power chip includes a first lead frame, and one side of the first substrate includes a substrate copper cladding. The power chip is placed on the copper-clad substrate and fixed. The conductive pins are placed on the copper-clad substrate along the first direction and fixed.

[0013] In some embodiments, the power chip provided above includes: Provide the aforementioned first lead frame and chip body; The chip body is placed in the first lead frame and fixed. A molding structure is obtained by molding the outer periphery of the chip body and the first lead frame along the first direction away from the copper cladding of the substrate.

[0014] In some embodiments, the molding of the outer periphery of the chip body and the side of the first lead frame away from the copper-clad substrate along the first direction to obtain a molding structure includes: The body portion is obtained by molding the outer periphery of the chip body and the first lead frame along the first direction away from the copper-clad substrate. Laser drilling is performed on the above-mentioned body to obtain conductive channels and electroplated holes. One end of the conductive channel is connected to the side of the chip body away from the first lead frame along the first direction, and the other end is connected to the first lead frame. The conductive body is formed by electrolytic plating within the aforementioned conductive channels through the aforementioned electroplating holes. A molding portion is formed on the side of the main body portion away from the first lead frame along the first direction to obtain the molding structure.

[0015] Thirdly, embodiments of this application provide a controller that includes a power module as described in any of the above-described schemes.

[0016] Fourthly, embodiments of this application provide an electrical appliance that includes a controller as described in the above-described scheme.

[0017] In the embodiments of this application, the power module achieves conductive connection by setting a first lead frame on the power chip side and a copper-clad substrate on the first substrate side, with the two lead frames bonded together, replacing the gold or aluminum wire bonding interconnection structure between power chips. This not only eliminates the step of soldering each bonding wire individually, reducing the number of steps in the power module packaging process, but also allows the interconnection between the lead frames to simultaneously support the assembly of multiple power chips, improving the efficiency of the packaging and subsequent testing stages. Furthermore, the bonding between the first lead frame and the copper-clad substrate allows for easy removal of the damaged power chip when it is damaged, enabling the module to function again after replacement with a new one, eliminating the need to scrap the entire power module and reducing maintenance costs. This power module improves production and testing efficiency while reducing maintenance costs and efficiency.

[0018] Furthermore, the direct conductive connection between the first lead frame and the copper clad substrate eliminates the need for bonding wires, shortens lead length, and significantly increases the conductive area between the power chip and the copper clad substrate, thereby reducing stray inductance of the power module. In addition, since both the first lead frame and the copper clad substrate are metal products, they possess superior thermal conductivity compared to the packaging materials of the power module. The copper clad substrate can quickly dissipate heat generated by the power chip, which is directly electrically connected to it, improving the heat dissipation efficiency of the power chip and enhancing the operational stability of the power module.

[0019] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 This is an isometric schematic diagram of a power module provided according to an embodiment of this application; Figure 2 This is an exploded view of the power module provided according to an embodiment of this application; Figure 3 This is a perspective view of a power chip provided according to an embodiment of this application; Figure 4 This is a flowchart of a power module manufacturing method provided according to an embodiment of this application; Figure 5 This is a flowchart of a power chip manufacturing method provided according to an embodiment of this application; Figure 6 This is a manufacturing process diagram of a power chip provided according to an embodiment of this application; Figure 7 This is a flowchart of a power chip manufacturing method provided according to an embodiment of this application.

[0022] Figure label: Z, First direction; X, Second direction; 10, Housing assembly; 11, Housing; 12, Base plate; 13, Cover; 20, Power chip; 21, First lead frame; 210, Frame body; 211, Pin portion; 22, Chip body; 23, Molding structure; 230, Conductive channel; 231, Body portion; 232, Molding portion; 24, Conductor; 30, First substrate; 31, Copper-clad substrate; 40, Conductive pin. Detailed Implementation

[0023] The embodiments of this application will now be described in detail. Examples of these embodiments are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0024] The terms "first" and "second" in the specification and claims of this application may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise stated, "multiple" means two or more. Furthermore, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0025] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0026] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0027] An Intelligent Power Module (IPM) is a power switching device that integrates an IGBT (Insulated Gate Bipolar Transistor) module. It is widely used in controlling and driving high-power electronic devices, including but not limited to AC motor drivers, frequency converters, and inverters.

[0028] Currently, IPM modules typically consist of a leadframe, power chips, and a molding compound. Electrical connections between the power chips and the leadframe, or between the power chips themselves, are usually formed by sequential bonding of gold and aluminum wires. Therefore, when an IPM module contains a large number of power chips arranged in a horizontal and vertical array, requiring numerous bonding wires for electrical interconnection, this results in low packaging efficiency. Furthermore, when one or more power chips within the IPM module fail, the bonding wires must be disconnected, the corresponding power chip removed, and the connection re-established, leading to low maintenance efficiency and often necessitating replacement of the entire IPM module, resulting in high maintenance costs.

[0029] Based on the above technical problems, this application proposes a power module, such as... Figure 1 and Figure 2 As shown, the power module includes at least one power chip 20, a first substrate 30, and conductive pins 40. Along the first direction Z, one side of the power chip 20 includes a first lead frame 21; along the first direction Z, one side of the first substrate 30 includes a substrate copper clad body 31. The first lead frame 21 is attached to and electrically connected to the substrate copper clad body 31; the conductive pins 40 are fixed to and electrically connected to the substrate copper clad body 31, and the conductive pins 40 extend along the first direction Z.

[0030] In this embodiment, the power module achieves conductive connection by setting a first lead frame 21 on the power chip 20 side and a copper-clad substrate 31 on the first substrate 30 side, with the two lead frames bonded together. This replaces the gold or aluminum wire bonding interconnection structure between the power chips 20. This not only eliminates the need to solder each bonding wire individually, reducing the number of steps in the power module packaging process, but also allows multiple power chips 20 to be assembled simultaneously through the interconnection between the lead frames, improving the efficiency of the packaging and subsequent testing processes. Furthermore, the bonded connection between the first lead frame 21 and the copper-clad substrate 31 means that if a power chip 20 inside the module is damaged, the bond between the first lead frame 21 and the copper-clad substrate 31 can be released, the damaged power chip 20 can be removed, and a new power chip 20 can be replaced to restore the module's function. This eliminates the need to scrap the entire power module, reducing maintenance costs during use. This power module improves production and testing efficiency while reducing maintenance costs and efficiency.

[0031] Furthermore, the direct conductive connection between the first lead frame 21 and the copper clad substrate 31 eliminates the need for bonding wires, shortens lead length, and significantly increases the conductive area between the power chip 20 and the copper clad substrate 31 of the first substrate 30, thereby reducing the stray inductance of the power module. In addition, since both the first lead frame 21 and the copper clad substrate 31 are metal products, they possess certain thermal conductivity, superior to that of the packaging material of the power module. The copper clad substrate 31 can quickly dissipate the heat generated by the power chip 20, which is directly electrically connected to it, improving the heat dissipation efficiency of the power chip 20 and enhancing the operational stability of the power module.

[0032] In this embodiment, the power chip 20 may include, but is not limited to, IGBTs (Insulated Gate Bipolar Transistors), transistors, Fast Recovery Diodes (FRDs), and Metal MOSFETs. Oxide Semiconductor Field Power semiconductor devices such as metal-oxide-semiconductor field-effect transistors (MOSFETs). The power chip 20 is a key component in the power module that generates a large amount of heat. The first substrate 30 can be a DBC (Direct Bond Copper) ceramic board, where the DBC board can be understood as a substrate formed by eutectic sintering of a ceramic substrate and copper foil at high temperature (e.g., 1065°C), and finally forming the circuit by etching according to the wiring requirements.

[0033] In this embodiment, the first substrate 30 is a DBC ceramic substrate. A DBC ceramic substrate is a new type of composite material in which a highly insulating alumina (Al2O3) or zirconium oxide (ZTA) ceramic substrate is coated with copper metal. In power electronic module technology, it is mainly used as a carrier for various chips (IGBT chips, Diode chips, resistors, SiC chips, etc.). The DBC ceramic substrate completes the connection of the chip part of the connection electrode or connection surface through the copper coating layer on the surface. The DBC ceramic substrate has significant characteristics such as good insulation performance, good heat dissipation performance, low thermal resistance coefficient, matching expansion coefficient, excellent mechanical properties, and good welding performance.

[0034] DBC ceramic substrate is a composite substrate made by directly sintering copper foil onto the ceramic surface at high temperature using a hot-melt bonding method. Direct copper plating technology utilizes an oxygen-containing eutectic solution to directly bond copper onto the ceramic. Its basic principle is to introduce an appropriate amount of oxygen between the copper and ceramic before or during the bonding process. At 1065 to 1083°C, copper and oxygen form a Cu-O eutectic solution. DBC technology utilizes this eutectic solution to react chemically with the ceramic substrate to generate CuAlO2 or CuAl2O4 phases, while simultaneously wetting the copper foil to achieve bonding between the ceramic substrate and the copper plate. Then, according to the circuit design, film is applied, exposed, and developed, and the circuit substrate is prepared through etching.

[0035] In this embodiment, the power chip 20 is used to be responsible for the power conversion and power output in the power module. The first lead frame 21 and the copper clad substrate 31 are bonded and fixed together. For example, the first lead frame 21 can be directly bonded to the surface of the copper clad substrate 31 by welding or sintering process to form a connection.

[0036] Specifically, in this embodiment, multiple power chips 20 are provided, specifically six in this embodiment. In other embodiments, they can also be set to two, three, four, etc., which will not be listed here. The six power chips 20 are arranged in a 2*3 pattern with horizontal and vertical intervals. In this embodiment, they can also be arranged in a circular array, a linear array, or other distribution methods according to specific needs, which will not be elaborated here.

[0037] In this embodiment, the copper cladding 31 is the copper cladding layer of the first substrate 30 made of DBC ceramic substrate. The copper cladding layer can be etched to form a specific pattern and can serve as a bridge between the power chip 20 and the conductive pin 40 and external circuits in the IPM module for electrical connection.

[0038] In some embodiments, the power module further includes a housing assembly 10, with the power chip 20 and the first substrate 30 both disposed within the housing assembly 10. The housing assembly 10 is filled with insulating sealant, and conductive pins 40 extend out of the housing assembly 10 along the first direction Z. In this embodiment, by placing core components such as the power chip 20 and the first substrate 30 inside the housing assembly 10 and filling the housing with insulating sealant, while allowing the conductive pins 40 connected to the copper-clad substrate 31 to extend out of the housing along the first direction Z, the housing assembly 10 forms a closed containment space, providing physical protection for the internal power chip 20, the first substrate 30, and the lead frame connection structure, reducing damage to the internal components caused by external impacts. The insulating sealant filling the gaps inside the housing provides insulation and isolation between different conductive components, reducing the possibility of short circuits between different conductive parts. Simultaneously, after the insulating sealant cures, it can provide auxiliary fixation for the relative positions of the internal components, reducing the probability of component displacement or connection breakage due to vibration during module use. The conductive pin 40 extends in the same direction as the first direction Z, and can extend beyond the housing assembly 10, so that the power module can be electrically connected to external devices through the conductive pin 40, thereby improving the ease of installation of the power module.

[0039] In this embodiment, the insulating sealant is an electronic insulating sealant, such as silicone gel or silicone electronic insulating sealant. It is mainly used for bonding and sealing electrical appliances, circuit boards, and mechanical parts, as well as for sensor surface encapsulation and waterproof insulation sealing of high-voltage porcelain insulators. Its core function is to prevent short circuits, corrosion, or leakage by filling gaps and isolating air and moisture, while also possessing shock-resistant and dustproof properties. After curing, this product exhibits excellent high-temperature resistance (e.g., a temperature of 459.48°C for 5% weight loss), water resistance, acid resistance, and sealing properties. Its adhesive strength is superior to ordinary silicone rubber. Curing speed, adhesive strength, and appearance color can be customized according to requirements. When using the electronic insulating sealant, the surface of the object to be bonded should be cleaned before application. It cures at room temperature, reaching a depth of 2mm to 4mm within 24 hours. Complete curing time varies depending on ambient temperature, humidity, and sealant thickness. During use, it is important to store it in a sealed container, avoid skin contact, and maintain a well-ventilated working environment.

[0040] In some embodiments, the housing assembly 10 includes a housing 11, a base plate 12, and a cover 13. Along the first direction Z, both ends of the housing 11 are open. The base plate 12 is connected to one of the open ends of the housing 11, and the cover 13 is connected to the other open end of the housing 11. A first substrate 30 is fixed to the base plate 12, and conductive pins 40 extend out of the cover 13. In this embodiment, the housing assembly 10 includes a housing 11 with open ends. The power chip 20 and the first substrate 30 can be placed on the base plate 12, and the first substrate 30 is fixed to the base plate 12 using adhesive. Then, the housing 11 is fitted over the housing, so that the first substrate 30 and the power chip 20 are located inside the housing 11. At this point, the aforementioned insulating sealant can be filled, and then the cover 13 is placed on top to assemble the housing assembly 10. After the insulating sealant cures, the power module is encapsulated.

[0041] In this embodiment, the split-type housing structure uses an outer shell 11 that runs through the first direction Z as the main support. During assembly, the components can be stacked sequentially from both ends along the first direction Z. The entire assembly process has no lateral installation steps, which reduces the operational difficulty of the housing assembly process. The base plate 12 serves as the supporting foundation for the first substrate 30. After being connected to the outer shell 11, it can provide stable support for the first substrate 30 and reduce the positional displacement of the first substrate 30 during use. After the cover 13 is connected to the other end of the outer shell 11, it can form a relatively closed internal accommodating space with the base plate 12 and the outer shell 11. When it is necessary to replace the internal power chip 20, it is only necessary to remove the cover 13 and remove the insulating sealant to access the internal power chip 20. There is no need to disassemble the fixed connection between the base plate 12 and the first substrate 30, which reduces the operational steps of chip replacement. After replacement, the insulating sealant is poured again and the cover 13 is installed to complete the secondary encapsulation, which will not be described in detail here.

[0042] like Figure 3 As shown, in some embodiments, the power chip 20 further includes a chip body 22 and a molding compound 23. Along the first direction Z, the chip body 22 is disposed on the side of the first lead frame 21 away from the substrate copper cladding 31, and the molding compound 23 covers the outer periphery of the chip body 22 and the side of the first lead frame 21 away from the substrate copper cladding 31 along the first direction Z.

[0043] In this embodiment, by adding an independent molding structure 23 to the power chip 20 end, a cover is formed on the outer periphery of the chip body 22 and the side of the first lead frame 21 away from the substrate copper cladding 31, which can complete the insulation protection of the non-connection surface between the chip body 22 and the first lead frame 21 before the power chip 20 is assembled with the first substrate 30.

[0044] This structure brings the molding process on the chip side forward to the prefabrication stage of the power chip 20, allowing molding to be completed simultaneously during the mass production of the power chip 20. There is no need to perform insulation wrapping on individual chips during the overall module packaging stage. The independent molding structure allows each power chip 20 to form an independent prefabrication unit.

[0045] In this embodiment, the bonding surface of the first lead frame 21 facing the copper cladding 31 of the substrate is not covered by plastic encapsulation, which will not affect the bonding and conductivity of the two lead frames. When replacing the power chip 20, the damaged chip can be directly picked up and put down along with the plastic encapsulation structure 23, avoiding mechanical damage to the chip body 22 during the picking and putting process, and also preventing residual solder or impurities from falling onto the chip surface during the replacement process, thereby avoiding affecting the normal circuit connection.

[0046] In some embodiments, the molding compound 23 has a conductive channel 230, and a conductor 24 is electroplated within the conductive channel 230. One end of the conductor 24 is connected to the side of the chip body 22 facing away from the first lead frame 21 along the first direction Z, and the other end is connected to the first lead frame 21. By providing a conductive channel 230 within the molding compound 23 and electroplating a conductor 24 within the channel, a conductive connection is achieved between the side of the chip body 22 facing away from the first lead frame 21 and the first lead frame 21, replacing the bonding wire structure used for traditional chip electrode leads.

[0047] In this embodiment, a conductive connection structure is adopted in which the conductor 24 is electroplated and formed within the conductive channel 230. This eliminates the need for pre-reserving space for bonding wire routing and soldering around the chip body 22, making it suitable for the fabrication of small-sized power chip 20 prefabrication units. Simultaneously, the electroplated conductor 24 is entirely encapsulated within the molding compound 23, preventing bonding wire misalignment or detachment and improving the structural stability of the power chip 20 prefabrication unit. Furthermore, this conductive connection structure is fabricated simultaneously during the molding process, eliminating the need for separate chip-level bonding operations. This further reduces the number of steps in the power chip 20 prefabrication process, achieving a fully bonding-free interconnect design suitable for mass production operations.

[0048] Further reference Figure 3In some embodiments, the molding compound 23 includes a body portion 231 and a molding compound portion 232. The body portion 231 covers the outer periphery of the chip body 22 and the side of the first lead frame 21 facing away from the copper-clad substrate 31 along the first direction Z. A conductive channel 230 is formed within the body portion 231. The conductive channel 230 extends through the side of the body portion 231 facing away from the first lead frame 21 along the first direction Z to form an electroplating hole. The molding compound portion 232 is used to seal the electroplating hole. In this embodiment, the molding compound 23 is divided into two parts: the body portion 231 and the molding compound portion 232. The body portion 231 completes the basic coverage of the non-connecting surfaces of the chip body 22 and the first lead frame 21, and an electroplating hole extending to the outside is reserved on the body portion 231 to provide a process channel for the electroplating operation of the conductor 24 within the conductive channel 230. After the conductor 24 is electroplated, the electroplating hole is sealed by the molding compound portion 232.

[0049] In this embodiment, the molding structure 23 eliminates the need for pre-installed conductive connectors within the molding material before molding, reducing the difficulty of aligning the conductive structure with the chip electrodes and the first lead frame 21 during the molding process, thus adapting to the requirements of batch molding operations. After electroplating of the conductor 24, the molding portion 232 can completely fill and seal the plating holes, allowing the conductor 24 to be entirely covered by the molding material, preventing the ends of the conductor 24 from being exposed. It also blocks external moisture and impurities from entering the conductive channel 230 along the plating holes, maintaining the stability of the internal conductive connections of the molding structure 23. Simultaneously, the molding portion 232 only serves to seal the plating holes and does not require alignment with high-precision structures such as the chip body 22 and the first lead frame 21 during molding, reducing the process precision requirements of the secondary molding process and minimizing problems caused by alignment deviations during molding.

[0050] In this embodiment, multiple chip bodies 22 and the first lead frame 21 can be simultaneously encapsulated, punched, electroplated and re-encapsulated, and then cut to obtain multiple independent power chips 20, which improves production efficiency. This will not be elaborated here.

[0051] In some embodiments, the first lead frame 21 includes a frame body 210 and pin portions 211. The pin portions 211 are disposed on both sides of the frame body 210 along the second direction X. The frame body 210 is connected to the chip body 22, and the pin portions 211 are connected to the conductor 24. The first lead frame 21 is divided into a frame body 210 that carries the chip body 22 and pin portions 211 disposed on both sides of the frame body 210 along the second direction X. The pin portions 211 are connected to the conductor 24 in the conductive channel 230 to achieve conductive communication between the electrodes of the chip body 22 and the first lead frame 21.

[0052] In this embodiment, the chip body 22 of the first lead frame 21 is divided into two functional areas: the chip body 22 carrying function and the conductive connection function. The frame body 210 in the middle area is specifically used for mounting and fixing the chip body 22, while the pin portions 211 on both sides are specifically used for connecting to the conductors 24. This allows the conductive traces 24 on the chip surface to be distributed along both sides, avoiding cross-interference between traces of different electrodes. With this structure, the conductors 24 only need to be connected from the electrode position of the chip body 22 to the nearest pin portion 211, eliminating the need to set a long conductive channel 230 within the plastic encapsulation structure 23, thus reducing the processing difficulty of the conductive channel 230.

[0053] Meanwhile, the pin portions 211 distributed on both sides ensure that the connection points between the first lead frame 21 and the conductor 24 are evenly distributed on both sides of the frame body 210. When the first lead frame 21 is bonded and fixed to the copper clad laminate 31 of the substrate, the force distribution on the bonding surface is more uniform, which can reduce the problems of tilting of the frame body 210 and incomplete bonding during the fixing process. In addition, the first lead frame 21 of this structure can be fabricated by matrix arrangement in a whole-board processing method, and the pin portions 211 are uniformly positioned, which is suitable for the requirements of batch processing and assembly operations. On the other hand, embodiments of this application provide a controller that includes the power module as described in any of the above solutions. This controller includes the power module as described in any of the above solutions, thereby possessing the beneficial effects of the power module as described in any of the above solutions, which will not be elaborated further here.

[0054] Specifically, in this embodiment, the power module achieves conductive connection by setting a first lead frame 21 on the power chip 20 side and a copper-clad substrate 31 on the first substrate 30 side, with the two lead frames bonded together. This replaces the gold or aluminum wire bonding interconnection structure between the power chips 20. This not only eliminates the need to solder each bonding wire individually, reducing the number of steps in the power module packaging process, but also allows the interconnection between the lead frames to simultaneously support the assembly of multiple power chips 20, improving the efficiency of the packaging and subsequent testing stages. Furthermore, the bonded connection between the first lead frame 21 and the copper-clad substrate 31 means that if a power chip 20 inside the module is damaged, the bond between the first lead frame 21 and the copper-clad substrate 31 can be released, the damaged power chip 20 can be removed, and a new power chip 20 can be replaced to restore the module's function. This eliminates the need to scrap the entire power module, reducing maintenance costs during use. This power module improves production and testing efficiency while reducing maintenance costs and efficiency.

[0055] Furthermore, the direct conductive connection between the first lead frame 21 and the copper clad substrate 31 eliminates the need for bonding wires, shortens lead length, and significantly increases the conductive area between the power chip 20 and the copper clad substrate 31 of the first substrate 30, thereby reducing the stray inductance of the power module. In addition, since both the first lead frame 21 and the copper clad substrate 31 are metal products, they possess certain thermal conductivity, superior to that of the packaging material of the power module. The copper clad substrate 31 can quickly dissipate the heat generated by the power chip 20, which is directly electrically connected to it, improving the heat dissipation efficiency of the power chip 20 and enhancing the operational stability of the power module.

[0056] On another front, this application provides an electrical appliance that includes the controller described in the above-described scheme. In this embodiment, the electrical appliance may include appliances with a low-power motor drive scenario, wherein the electrical appliance may include, but is not limited to, household appliances, industrial servers, and water pumps. For example, the household appliance may include, but is not limited to, air conditioners, air purifiers, washing machines, refrigerators, fans, and vacuum cleaners.

[0057] In summary, this power module achieves conductive connection by setting a first lead frame 21 on the power chip 20 side and a copper-clad substrate 31 on the first substrate 30 side, with the two lead frames bonded together. This replaces the gold or aluminum wire bonding interconnection structure between the power chips 20. This not only eliminates the need for individual wire bonding, reducing the number of steps in the power module packaging process, but also allows multiple power chips 20 to be assembled simultaneously through the interconnection between the lead frames, improving the efficiency of the packaging and subsequent testing stages. Furthermore, the bonded connection between the first lead frame 21 and the copper-clad substrate 31 means that if a power chip 20 inside the module is damaged, the bond between the first lead frame 21 and the copper-clad substrate 31 can be released, the damaged power chip 20 can be removed, and a new power chip 20 can be replaced to restore the module's function. This eliminates the need to scrap the entire power module, reducing maintenance costs. This power module improves production and testing efficiency while reducing maintenance costs and efficiency.

[0058] Fourthly, such as Figure 4 As shown in the embodiment of this application, a method for manufacturing a power module is proposed, which includes: Step 101: A first substrate 30 and a power chip 20 are provided. Along the first direction Z, one side of the power chip 20 includes a first lead frame 21, and one side of the first substrate 30 includes a substrate copper cladding 31.

[0059] In this embodiment, the first substrate 30 and the power chip 20 are both pre-manufactured finished products. The power chip 20 has a first lead frame 21 made of copper on one side, and the first substrate 30 has a copper-clad substrate 31 on one side. The power chip 20 is placed on the copper-clad substrate 31 along a third direction and then fixed by soldering.

[0060] In this embodiment, there are multiple power chips 20, and the first substrate 30 has multiple mounting areas corresponding to the power chips 20, which will not be described in detail here. The first lead frame 21 can be formed by stamping or by etching, and no further limitations are imposed here.

[0061] Step 102: Place the power chip 20 on the copper-clad substrate 31 and fix it in place. In this embodiment, during fixing, welding is used. For example, the first substrate 30 and the copper-clad substrate 31 can be placed in the equipment track and transported to the dispensing station. Silver paste is applied to the mounting area of ​​the power chip 20 on the copper-clad substrate 31. Then, the first substrate 30 and the copper-clad substrate 31 are transported to the welding station. At the welding station, the equipment will bond the power chip 20 to the silver paste in the corresponding mounting area, forming an adhesive fixation between the power chip 20 and the copper-clad substrate 31.

[0062] In this embodiment, there are multiple power chips 20. During the bonding process of multiple power chips 20, the equipment at the welding station can bond the power chips 20 to the silver paste of the corresponding core area, thereby forming an adhesive fixation between the multiple power chips 20 and the copper clad body 31 of the substrate.

[0063] In this embodiment, conductive connections are achieved by bonding and fixing two lead frames together, replacing the gold or aluminum wire bonding interconnection structure between power chips 20. This not only eliminates the need to solder each bonding wire individually, reducing the number of steps in the power module packaging process, but also allows the interconnection between the lead frames to simultaneously support the assembly of multiple power chips 20, improving the efficiency of the packaging and subsequent testing stages. Furthermore, the bonding and fixing of the first lead frame 21 and the copper-clad substrate 31 allows for easy removal of the damaged power chip 20 from the first lead frame 21 and copper-clad substrate 31 when it is damaged. The damaged chip can then be replaced with a new one, restoring the module's functionality without requiring the entire power module to be scrapped, thus reducing maintenance costs. This power module improves production and testing efficiency while reducing maintenance costs and efficiency.

[0064] Furthermore, the direct conductive connection between the first lead frame 21 and the copper clad substrate 31 eliminates the need for bonding wires, shortens lead length, and significantly increases the conductive area between the power chip 20 and the copper clad substrate 31 of the first substrate 30, thereby reducing the stray inductance of the power module. In addition, since both the first lead frame 21 and the copper clad substrate 31 are metal products, they possess certain thermal conductivity, superior to that of the packaging material of the power module. The copper clad substrate 31 can quickly dissipate the heat generated by the power chip 20, which is directly electrically connected to it, improving the heat dissipation efficiency of the power chip 20 and enhancing the operational stability of the power module.

[0065] Step 103: Place the conductive pin 40 on the copper clad body 31 of the substrate along the first direction Z and fix it.

[0066] In this embodiment, the conductive pin 40 is a cylindrical metal pin, which is placed in the electrode connection area of ​​the copper clad body 31 of the substrate to form an output component for connecting the power chip 20 to the external circuit.

[0067] In this embodiment, the copper-clad substrate 31 is the copper-clad layer of the first substrate 30 obtained from the DBC ceramic substrate. The DBC ceramic substrate is a composite substrate made by directly sintering copper foil onto the ceramic surface at high temperature using a hot-melt bonding method. Direct copper plating technology uses an oxygen-containing eutectic solution of copper to directly bond copper onto the ceramic. Its basic principle is to introduce an appropriate amount of oxygen between the copper and the ceramic before or during the bonding process. At 1065 to 1083°C, copper and oxygen form a Cu-O eutectic solution. The DBC technology utilizes this eutectic solution to react chemically with the ceramic substrate to generate CuAlO2 or CuAl2O4 phases, and to wet the copper foil to achieve the bonding between the ceramic substrate and the copper plate. Then, according to the circuit design, film is applied, exposed, and developed, and the circuit substrate is prepared by etching. In some embodiments, the electrical interconnection topology circuit diagram of the intelligent power module can first be transferred to the ceramic insulating substrate by exposure and development. Then, a copper foil is deposited on the insulating ceramic substrate, and the unwanted copper foil on the insulating substrate is removed by etching process to form a copper-clad layer with the required circuit, which will not be described in detail here.

[0068] In this embodiment, a subsequent encapsulation step is also included. First, the fixed first substrate 30, power chip 20 and conductive pins 40 are placed on the base plate 12, and the first substrate 30 is fixed to the base plate 12 by adhesive. Then, the outer shell 11 is put on, so that the first substrate 30 and power chip 20 are located inside the outer shell 11. At this time, the above-mentioned insulating sealant can be filled. Then, the cover 13 is installed and fixed to realize the assembly of the housing component 10. After the insulating sealant cures, the encapsulation of the power module can be realized.

[0069] The split-type shell structure uses an outer shell 11 that runs through the first direction Z as the main support. During assembly, components can be stacked sequentially from both ends along the first direction Z. The entire assembly process has no lateral installation steps, which reduces the operational difficulty of the shell assembly process. The base plate 12 serves as the load-bearing foundation for the first substrate 30. After being connected to the outer shell 11, it provides stable support for the first substrate 30, reducing positional displacement of the first substrate 30 during use. After the cover 13 is connected to the other end of the outer shell 11, it can form a relatively enclosed internal receiving space with the base plate 12 and the outer shell 11.

[0070] Finally, the finished intelligent power module is sent to the testing equipment for electrical performance testing to ensure that the electrical performance of the intelligent power module meets the design requirements or the usage requirements.

[0071] After the test is completed, a mark is made on the casing 11 of the power module to ensure it meets the factory requirements.

[0072] This embodiment also provides maintenance steps for the power module. For example, when it is necessary to replace the internal power chip 20, the internal power chip 20 can be accessed simply by removing the cover 13 and removing the insulating sealant. There is no need to disassemble the fixed connection between the base plate 12 and the first substrate 30, which can reduce the operation steps of chip replacement. After melting the solder in the corresponding area, the damaged power chip 20 can be removed and a new power chip 20 can be installed. After the replacement is completed, the insulating sealant is poured again and the cover 13 is installed to complete the secondary encapsulation. This will not be described in detail here.

[0073] In this embodiment, the insulating sealant is removed by chemical corrosion, and the chemical agent will not affect the plastic encapsulation structure 23 of the internal power chip 20, thus not affecting the performance of other normal power chips 20.

[0074] In summary, the power module manufactured by this method achieves conductive connection by setting a first lead frame 21 on the power chip 20 side and a copper-clad substrate 31 on the first substrate 30 side, with the two lead frames bonded together. This replaces the gold or aluminum wire bonding interconnection structure between the power chips 20. This not only eliminates the need for individual wire bonding, reducing the number of steps in the power module packaging process, but also allows multiple power chips 20 to be assembled simultaneously through the interconnection between the lead frames, improving the efficiency of the packaging and subsequent testing processes. Furthermore, the bonded connection between the first lead frame 21 and the copper-clad substrate 31 means that if a power chip 20 inside the module is damaged, the bond between the first lead frame 21 and the copper-clad substrate 31 can be released, the damaged power chip 20 can be removed, and a new power chip 20 can be replaced to restore the module's function. This eliminates the need to scrap the entire power module, reducing maintenance costs during use. This power module improves production and testing efficiency while reducing maintenance costs and efficiency.

[0075] like Figure 5 and Figure 6 As shown, in some embodiments, the step of providing the power chip 20 is further included, specifically including: Step 201: Provide the first lead frame 21 and the chip body 22.

[0076] In this embodiment, the first lead frame 21 is the connection part between the chip body 22 and the copper-clad substrate 31. It is made of copper and has the required connection circuit, which will not be described in detail here.

[0077] The chip body 22 is a chip fabricated from a wafer, including but not limited to power semiconductor devices such as IGBTs, transistors, fast recovery diodes, and MOSFETs.

[0078] Step 202: Place the chip body 22 on the first lead frame 21 and fix it.

[0079] In this embodiment, during fixing, a welding method is used. For example, the first lead frame 21 can be placed in the equipment track and transported to the dispensing station. Silver paste or solder paste is applied to the mounting area of ​​the chip body 22 on the first lead frame 21. Then, the first lead frame 21 is transported to the welding station. At the welding station, the equipment will bond the chip body 22 to the silver paste or solder paste in the corresponding mounting area, forming an adhesive fixation between the chip body 22 and the first lead frame 21.

[0080] In this embodiment, multiple chip bodies 22 can be fixed simultaneously. During the bonding process of multiple chip bodies 22, the chip bodies 22 can be bonded to the silver paste of the corresponding first lead frame 21 by the equipment at the welding station, thus forming an adhesive fixation between multiple chip bodies 22 and multiple first lead frames 21.

[0081] Step 203: Molding structure 23 is obtained by molding the outer periphery of the chip body 22 and the side of the first lead frame 21 away from the copper cladding 31 of the substrate along the first direction Z.

[0082] In this embodiment, the installed first lead frame 21 and chip body 22 are sent into the mold cavity of the molding equipment, and then the product is wrapped with molding material to obtain molding structure 23. By adding an independent molding structure 23 at the end of the power chip 20, a cover is formed on the outer periphery of the chip body 22 and the side of the first lead frame 21 away from the copper clad body 31 of the substrate, so that the non-connecting surface of the chip body 22 and the first lead frame 21 can be insulated and protected before the power chip 20 is assembled with the first substrate 30.

[0083] This structure brings the molding process on the chip side forward to the prefabrication stage of the power chip 20, allowing molding to be completed simultaneously during the mass production of the power chip 20. There is no need to perform insulation wrapping on individual chips during the overall module packaging stage. The independent molding structure allows each power chip 20 to form an independent prefabrication unit.

[0084] In this embodiment, the bonding surface of the first lead frame 21 facing the copper cladding 31 of the substrate is not covered by plastic encapsulation, which will not affect the bonding and conductivity of the two lead frames. When replacing the power chip 20, the damaged chip can be directly picked up and put down along with the plastic encapsulation structure 23, avoiding mechanical damage to the chip body 22 during the picking and putting process, and also preventing residual solder or impurities from falling onto the chip surface during the replacement process, thereby avoiding affecting the normal circuit connection.

[0085] like Figure 6 and Figure 7 As shown, in some embodiments, a molding compound structure 23 is obtained by molding the outer periphery of the chip body 22 and the side of the first lead frame 21 facing away from the substrate copper cladding 31 along the first direction Z, specifically including: Step 301: The body portion 231 is obtained by molding the outer periphery of the chip body 22 and the side of the first lead frame 21 away from the copper clad body 31 of the substrate along the first direction Z.

[0086] In this embodiment, the installed first lead frame 21 and chip body 22 are sent into the mold cavity of the molding equipment, and then the product is wrapped with molding material to obtain the body part 231.

[0087] Step 302: Laser drilling is performed on the body part 231 to obtain conductive channel 230 and electroplating hole. One end of conductive channel 230 is connected to the side of chip body 22 away from the first lead frame 21 along the first direction Z, and the other end is connected to the first lead frame 21.

[0088] In this embodiment, after the body portion 231 has solidified, laser drilling is used to drill holes in the body portion 231 to obtain conductive channels 230. Specifically, laser drilling involves focusing a laser beam on the surface of the plastic part, using the high temperature characteristics of the laser to melt the material, using compressed gas coaxial with the laser beam to blow away the melted plastic product, and causing the laser beam and the plastic product to move relative to each other along a certain trajectory, thereby cutting and forming a channel with a certain shape.

[0089] In this embodiment, the first lead frame 21 includes a frame body 210 and a pin portion 211. After the chip body 22 is installed on the frame body 210 and encapsulated, when laser drilling is performed, only the chip body 22 needs to be drilled, and the extension direction of the drilling is towards the pin portion 211, so as to realize the connection between the conductive channel 230 and the chip body 22 and the pin portion 211, which facilitates subsequent circuit and conductive operations.

[0090] Step 303: Electroplating is performed on the conductive channel 230 to form a conductive body 24.

[0091] In this embodiment, by setting a conductive channel 230 in the plastic encapsulation structure 23 and electroplating a conductive body 24 in the channel, a conductive connection is achieved between the chip body 22 on the side away from the first lead frame 21 and the first lead frame 21, replacing the bonding wire structure used for traditional chip electrode lead-out.

[0092] The conductive connection structure employs electroplating to form the conductor 24 within the conductive channel 230, eliminating the need for pre-reserved space for bonding wire routing and soldering around the chip body 22. This design is suitable for the fabrication of small-sized power chip 20 prefabrication units. Furthermore, the electroplated conductor 24 is entirely encapsulated within the molding compound 23, preventing bonding wire misalignment or detachment and improving the structural stability of the power chip 20 prefabrication unit. Additionally, this conductive connection structure is fabricated simultaneously during the molding process, eliminating the need for separate chip-level bonding operations. This further reduces the number of steps in the power chip 20 prefabrication process, enabling a fully bonding-free interconnect design suitable for mass production.

[0093] In this embodiment, the conductor 24 is copper obtained by electroplating, which fills the conductive channel 230. Through continuous electroplating, copper ions are deposited in the blind hole until the entire hole is filled. The key to this method is to control the current density. Initially, a low current (1-2 A / dm²) is used to allow the copper to adhere evenly to the hole wall, avoiding premature closure of the hole opening and the formation of "voids". Later, the current is gradually increased (3-4 A / dm²) to accelerate the filling. The entire process takes 40-60 minutes.

[0094] Before electroplating, high-pressure water cleaning (5-10 MPa) is required to remove impurities, followed by chemical etching (such as with sodium persulfate solution) to micro-roughen the hole walls, forming a uniform uneven structure. Optimizing the parameters for copper plating during electroplating is crucial; pulse plating technology can improve the filling effect. The peak current of the pulse is 3-5 times the average current, promoting copper ion migration to the bottom of the hole and reducing excessive growth at the hole opening.

[0095] Step 304: Molding a molding portion 232 is performed on the side of the main body 231 that is opposite to the first lead frame 21 along the first direction Z to obtain the molding structure 23.

[0096] After the electroplating of the conductor 24 is completed, the molding compound 232 can completely fill and seal the plating holes, allowing the conductor 24 to be entirely covered by the molding compound material. This prevents the ends of the conductor 24 from being exposed and also blocks external moisture and impurities from entering the conductive channel 230 along the plating holes, maintaining the stability of the conductive connection inside the molding compound structure 23. Meanwhile, the molding compound 232 only serves to seal the plating holes and does not need to be aligned with high-precision structures such as the chip body 22 and the first lead frame 21 during the molding process. This reduces the process precision requirements of the secondary molding process and minimizes problems caused by alignment deviations during molding.

[0097] In summary, this application provides a method for manufacturing a power module. The power module obtained by this method achieves conductive connection by setting a first lead frame 21 on the power chip 20 side and a copper-clad substrate 31 on the first substrate 30 side, with the two lead frames bonded together. This replaces the gold or aluminum wire bonding interconnection structure between the power chips 20. This not only eliminates the need for individual wire bonding, reducing the number of steps in the power module packaging process, but also allows the interconnection between the lead frames to simultaneously support the assembly of multiple power chips 20, improving the efficiency of the packaging and subsequent testing stages. Furthermore, the bonded connection between the first lead frame 21 and the copper-clad substrate 31 means that when a power chip 20 inside the module is damaged, the bonded connection between the first lead frame 21 and the copper-clad substrate 31 can be released, the damaged power chip 20 can be removed, and a new power chip 20 can be replaced to restore the module's function. This eliminates the need to scrap the entire power module, reducing maintenance costs during its use. This power module can improve production and testing efficiency, while reducing maintenance costs and efficiency.

[0098] Furthermore, the direct conductive connection between the first lead frame 21 and the copper clad substrate 31 eliminates the need for bonding wires, shortens lead length, and significantly increases the conductive area between the power chip 20 and the copper clad substrate 31 of the first substrate 30, thereby reducing the stray inductance of the power module. In addition, since both the first lead frame 21 and the copper clad substrate 31 are metal products, they possess certain thermal conductivity, superior to that of the packaging material of the power module. The copper clad substrate 31 can quickly dissipate the heat generated by the power chip 20, which is directly electrically connected to it, improving the heat dissipation efficiency of the power chip 20 and enhancing the operational stability of the power module.

[0099] The various embodiments in the specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0100] Although preferred embodiments of the present application have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of the embodiments of the present application.

[0101] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0102] The present application has been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of the present application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of the present application. Therefore, the content of this specification should not be construed as a limitation of the present application.

Claims

1. A power module, characterized in that, include: At least one power chip, along a first direction, has a first lead frame on one side; A first substrate, along the first direction, includes a substrate copper clad body on one side, and the first lead frame is attached, fixed, and electrically connected to the substrate copper clad body. The conductive pin is fixed and electrically connected to the copper-clad substrate, and extends along the first direction.

2. The power module according to claim 1, characterized in that, The power chip also includes a chip body and a molding compound. Along the first direction, the chip body is disposed on the side of the first lead frame away from the copper clad substrate. The molding compound covers the outer periphery of the chip body and the side of the first lead frame away from the copper clad substrate along the first direction.

3. The power module according to claim 2, characterized in that, The encapsulation structure has a conductive channel, and a conductor is electroplated into the conductive channel. One end of the conductor is connected to the side of the chip body away from the first lead frame along the first direction, and the other end is connected to the first lead frame.

4. The power module according to claim 3, characterized in that, The molding compound structure includes a body portion and a molding portion. The body portion covers the outer periphery of the chip body and the side of the first lead frame away from the copper-clad substrate along the first direction. The conductive channel is formed within the body portion. The conductive channel extends along the first direction through the side of the body portion away from the first lead frame to form an electroplating hole, and the encapsulation portion is used to seal the electroplating hole.

5. The power module according to claim 3, characterized in that, The first lead frame includes a frame body and a pin portion. The pin portion is disposed on both sides of the frame body along a second direction. The frame body is connected to the chip body, and the pin portion is connected to the conductor.

6. The power module according to claim 1, characterized in that, The power module further includes a housing assembly, in which the power chip and the first substrate are both disposed. The housing assembly is filled with insulating sealant, and the conductive pins extend out of the housing assembly along the first direction.

7. The power module according to claim 6, characterized in that, The housing assembly includes an outer shell, a base plate, and a cover. Along the first direction, both ends of the outer shell are open. The base plate is connected to one of the open ends of the outer shell, and the cover is connected to the other open end of the outer shell. The first substrate is fixed to the base plate, and the conductive pin extends out of the cover.

8. A method for manufacturing a power module, characterized in that, include: A first substrate and a power chip are provided. Along a first direction, one side of the power chip includes a first lead frame, and one side of the first substrate includes a substrate copper cladding. The power chip is placed on the copper-clad substrate and fixed. The conductive pins are placed on the copper-clad substrate along the first direction and fixed.

9. The power module manufacturing method according to claim 8, characterized in that, The power chip provided includes: Provide the first lead frame and the chip body; The chip body is placed in the first lead frame and fixed. A molding structure is obtained by molding the outer periphery of the chip body and the first lead frame on the side opposite to the copper cladding of the substrate along the first direction.

10. The power module manufacturing method according to claim 9, characterized in that, The molding process involves molding the outer periphery of the chip body and the side of the first lead frame away from the copper-clad substrate along the first direction to obtain a molding structure, including: The body portion is formed by molding the outer periphery of the chip body and the side of the first lead frame away from the copper-clad substrate along the first direction. Laser drilling is performed on the main body to obtain conductive channels and electroplating holes. One end of the conductive channel is connected to the side of the chip body away from the first lead frame along the first direction, and the other end is connected to the first lead frame. Electroplating is performed from the electroplating holes into the conductive channels to form a conductive body; A molding portion is formed on the side of the body portion away from the first lead frame along the first direction to obtain the molding structure.

11. A controller, characterized in that, Includes the power module as described in any one of claims 1-7.

12. An electrical appliance, characterized in that, Includes the controller as described in claim 11.

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